WO2022104683A1 - Array-type ultrasonic transducer and manufacturing method therefor - Google Patents

Array-type ultrasonic transducer and manufacturing method therefor Download PDF

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Publication number
WO2022104683A1
WO2022104683A1 PCT/CN2020/130397 CN2020130397W WO2022104683A1 WO 2022104683 A1 WO2022104683 A1 WO 2022104683A1 CN 2020130397 W CN2020130397 W CN 2020130397W WO 2022104683 A1 WO2022104683 A1 WO 2022104683A1
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layer
acoustic
ultrasonic transducer
impedance matching
backing layer
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PCT/CN2020/130397
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French (fr)
Chinese (zh)
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马腾
张琪
黄继卿
李永川
郑海荣
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深圳先进技术研究院
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Priority to PCT/CN2020/130397 priority Critical patent/WO2022104683A1/en
Publication of WO2022104683A1 publication Critical patent/WO2022104683A1/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B06GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06BMETHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction

Definitions

  • the invention relates to the technical field of ultrasonic transducers, and more particularly, to an array type ultrasonic transducer and a manufacturing method thereof.
  • acoustic metamaterials are composed of sub-wavelength-scale structural units (or artificial "atoms"), which can exhibit equivalent material parameters that natural materials do not possess, such as negative mass density, Negative elastic modulus, near-zero refractive index and extreme anisotropy, etc.
  • the macroscopic physical properties of acoustic metamaterials mainly depend on the local properties of their structural units rather than the long-range interactions between them. This enables us to design macroscopic material parameters on demand at the "atomic" scale, and more easily construct spatial gradient distributions, thereby enabling anomalous manipulation of acoustic waves.
  • the performance of existing ultrasonic transducer devices has yet to be improved.
  • the present invention provides an array ultrasonic transducer and a manufacturing method thereof, which effectively solve the technical problems existing in the prior art, and the array ultrasonic transducer provided by the present invention has high performance.
  • An array type ultrasonic transducer comprising a plurality of ultrasonic transducer units arranged in an array, the ultrasonic transducer units comprising:
  • the circuit layer is exposed on one side of the backing layer
  • an acoustic artificial structure located on the side of the piezoelectric layer away from the backing layer, the acoustic artificial structure comprising: an acoustic impedance matching layer and an acoustic metasurface; wherein, the acoustic metasurface is located on the acoustic metasurface Between the impedance matching layer and the piezoelectric layer, or the acoustic metasurface is located on the side of the acoustic impedance matching layer away from the backing layer.
  • the acoustic impedance matching layer includes a first acoustic impedance matching sub-layer to an N-th acoustic impedance matching sub-layer that are sequentially superimposed along the direction from the backing layer to the piezoelectric layer, where N is greater than or equal to 1. Integer.
  • the acoustic metasurface includes a circular center portion and a first annular portion to an M-th annular portion, where M is an integer greater than or equal to 1; the first annular portion surrounds the circular center part, the i+1 th annular part surrounds the i th annular part, between the first annular part and the circular center part and between the i+1 th annular part and the i th annular part All are in the shape of annular grooves, and i is an integer greater than or equal to 1 and less than M;
  • the acoustic metasurface comprises arranging a plurality of strips side by side, at least one strip having a height different from the rest of the strips in the direction from the backing layer to the piezoelectric layer, and/ Or, in the arrangement direction of the plurality of strip-shaped parts, the width of at least one strip-shaped part is different from the width of the other strip-shaped parts, and/or the side of the strip-shaped part facing away from the backing layer is wedge-shaped, And/or, the strip part is a hollow strip part, and/or, the material of at least one strip part is different from the material of the other strip parts;
  • the side of the acoustic metasurface facing away from the backing layer is a wavy surface.
  • the material of the acoustic impedance matching layer is a polymer material or a metal material.
  • the material of the acoustic metasurface is a polymer material.
  • the piezoelectric layer body is made of piezoelectric ceramic, piezoelectric ceramic composite material, pressure point single crystal material or piezoelectric single crystal composite material.
  • the material of the backing layer includes epoxy resin, and the material of the backing layer further includes at least one of tungsten powder and alumina powder.
  • the plurality of ultrasonic transducer units are arranged in a matrix.
  • the present invention also provides a manufacturing method of an array ultrasonic transducer, wherein the array ultrasonic transducer includes a plurality of ultrasonic transducer units arranged in an array, and the fabrication method of the ultrasonic transducer unit:
  • a piezoelectric layer is formed on the side of the backing layer with the circuit layer, the piezoelectric layer includes a piezoelectric layer body, and a surface of the piezoelectric layer body on the side facing the backing layer and away from the backing layer is formed. an electrode on one side surface of the backing layer;
  • the acoustic artificial structure includes: an acoustic impedance matching layer and an acoustic metasurface grown by a forward growth process; wherein, the acoustic ultrasound The textured surface is located between the acoustic impedance matching layer and the piezoelectric layer, or the acoustic metasurface is located on the side of the acoustic impedance matching layer away from the backing layer.
  • the acoustic impedance matching layer grown by the forward growth process includes:
  • the acoustic impedance matching layer is grown by a thermal evaporation coating process or a magnetron sputtering process.
  • the technical solution provided by the present invention has at least the following advantages:
  • the invention provides an array type ultrasonic transducer and a manufacturing method thereof, comprising a plurality of ultrasonic transducer units arranged in an array, wherein the ultrasonic transducer unit comprises: a backing layer, and one side surface of the backing layer is exposed circuit layer; a piezoelectric layer located on the side of the backing layer with the circuit layer, the piezoelectric layer includes a piezoelectric layer body, and a surface located on the side of the piezoelectric layer body facing the backing layer and an electrode facing away from the side surface of the backing layer; and an acoustic artificial structure located on the side of the piezoelectric layer facing away from the backing layer, the acoustic artificial structure comprising: an acoustic impedance matching layer and an acoustic metasurface; Wherein, the acoustic metasurface is located between the acoustic impedance matching layer and the piezoelectric layer, or the acoustic metasurface is located on the side of the acoustic imped
  • the ultrasonic transducer unit provided by the present invention can solve the problem of impedance mismatch between the ultrasonic transducer unit and the target object through the acoustic impedance matching layer, improve the output bandwidth and amplitude response of the ultrasonic transducer unit, and increase the Its imaging resolution and sensitivity.
  • the ultrasonic transducer unit can correct the sound field distortion generated during the adjustment of beam control, deflection, and beam focusing through the acoustic metasurface.
  • the imaging resolution and signal-to-noise ratio of the ultrasonic transducer unit can be further improved.
  • an array ultrasonic transducer is obtained by arranging a plurality of ultrasonic transducer units in an array, thereby improving the applicable range and performance of the array ultrasonic transducer.
  • the present invention uses the forward growth process to grow the acoustic impedance matching layer, thereby improving the thickness accuracy of the acoustic impedance matching layer and further improving the performance of the array ultrasonic transducer.
  • FIG. 1 is a schematic structural diagram of an array ultrasonic transducer provided by an embodiment of the present invention
  • FIG. 2 is a schematic structural diagram of an ultrasonic transducer unit according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of another ultrasonic transducer unit provided by an embodiment of the present invention.
  • FIG. 4 is a schematic structural diagram of another ultrasonic transducer unit provided by an embodiment of the present invention.
  • 5a is a schematic structural diagram of an acoustic metasurface provided by an embodiment of the present invention.
  • Figure 5b is a sectional view in the direction of AA' in Figure 5a;
  • FIG. 6 is a schematic structural diagram of another acoustic metasurface provided by an embodiment of the present invention.
  • FIG. 7 is a schematic structural diagram of yet another acoustic metasurface provided by an embodiment of the present invention.
  • FIG. 8 is a schematic structural diagram of yet another acoustic metasurface provided by an embodiment of the present invention.
  • FIG. 9 is a schematic structural diagram of another acoustic metasurface provided by an embodiment of the present invention.
  • FIG. 10 is a schematic structural diagram of yet another acoustic metasurface provided by an embodiment of the present invention.
  • FIG. 11 is a schematic structural diagram of still another acoustic metasurface provided by an embodiment of the present invention.
  • Ultrasound transducers are key components in ultrasound equipment and can be used for ultrasound imaging, ultrasound stimulation, ultrasound therapy, acoustic manipulation, and more. The performance of existing ultrasonic transducer devices has yet to be improved.
  • the embodiments of the present invention provide an array ultrasonic transducer and a manufacturing method thereof, which effectively solve the technical problems existing in the prior art, and the array ultrasonic transducer provided by the embodiments of the present invention has high performance.
  • FIG. 1 is a schematic structural diagram of an array ultrasonic transducer provided by an embodiment of the present invention
  • FIG. 2 is a structural schematic diagram of an ultrasonic transducer unit provided by an embodiment of the present invention
  • 3 is a schematic structural diagram of another ultrasonic transducer unit provided in an embodiment of the present invention.
  • the array type ultrasonic transducer includes a plurality of ultrasonic transducer units 100 arranged in an array, and the ultrasonic transducer units include:
  • the backing layer 110 has a bare circuit layer on one surface of the backing layer 110 .
  • the backing layer 110 has a piezoelectric layer 120 on one side of the circuit layer, the piezoelectric layer 120 includes a piezoelectric layer body, and a surface of the piezoelectric layer body on the side facing the backing layer 110 and an electrode facing away from the surface of the backing layer 110 .
  • the structured surface 132 is located between the acoustic impedance matching layer 131 and the piezoelectric layer 120 (as shown in FIG. 2 ).
  • the acoustic metasurface 132 is located on the side of the acoustic impedance matching layer 131 away from the backing layer 110 (as shown in FIG. 3 ).
  • the plurality of ultrasonic transducer units provided by the present invention may be arranged in a matrix, which is not specifically limited by the present invention.
  • the ultrasonic transducer unit provided by the embodiment of the present invention can solve the problem of impedance mismatch between the ultrasonic transducer unit and the target object through the acoustic impedance matching layer, improve the output bandwidth and amplitude response of the ultrasonic transducer unit, and increase the performance of the ultrasonic transducer unit.
  • the ultrasonic transducer unit can correct the sound field distortion generated during the adjustment of beam control, deflection, and beam focusing through the acoustic metasurface.
  • the imaging resolution and signal-to-noise ratio of the ultrasonic transducer unit can be further improved.
  • an array ultrasonic transducer is obtained by arranging a plurality of ultrasonic transducer units in an array, thereby improving the applicable range and performance of the array ultrasonic transducer.
  • the embodiment of the present invention uses the forward growth process to grow the acoustic impedance matching layer, thereby improving the thickness accuracy of the acoustic impedance matching layer and further improving the performance of the array ultrasonic transducer.
  • the ultrasonic transducer unit provided by the embodiment of the present invention can also achieve sub-wavelength focusing and super-imaging effects that break through the diffraction limit through an acoustic artificial structure.
  • the acoustic impedance matching layer provided by the embodiment of the present invention is used to match the impedance between the ultrasonic transducer unit and the target object, wherein the acoustic impedance matching unit may be a single-layer structure, or the acoustic impedance matching unit may also for multiple stacked structures. As shown in FIG.
  • the acoustic impedance matching layer 131 provided by the embodiment of the present invention includes the backing layer 110 to the From the first acoustic impedance matching sub-layer 1311 to the N-th acoustic impedance matching sub-layer 131n that are sequentially stacked in the direction of the piezoelectric layer 120 , N is an integer greater than or equal to 1.
  • the acoustic metasurface provided by the embodiment of the present invention is used to change the transmission characteristics of sound waves, such as reflection and focusing at any point, perfect low-frequency sound absorption, self-bending sound beams, spiral sound waves, and asymmetric transmission of sound energy etc.
  • the embodiments of the present invention do not specifically limit the structure of the acoustic metasurface, which may be a multi-circle nested structure, a multi-layer structure, a gradient structure, or the like.
  • Fig. 5a is a schematic structural diagram of an acoustic metasurface provided by an embodiment of the present invention
  • Fig. 5a is a schematic structural diagram of an acoustic metasurface provided by an embodiment of the present invention
  • the acoustic metasurface 132 includes a circular central portion 1320 and a first annular portion 1321 to an M-th annular portion 132m, where M is an integer greater than or equal to 1.
  • the first annular portion 1321 surrounds the circular central portion 1320
  • the i+1-th annular portion surrounds the i-th annular portion
  • Both the i+1 th annular portion and the i th annular portion are in the shape of an annular groove, and i is an integer greater than or equal to 1 and less than M.
  • the depth of the groove structure between the first annular portion and the circular center portion provided by the embodiment of the present invention and the depth of the groove structure between the i+1 th annular portion and the i th annular portion are different. To make specific restrictions, it can penetrate the acoustic metasurface, which needs to be specifically designed according to the actual application.
  • the acoustic metasurface includes a plurality of strip-shaped parts 132a arranged side by side, and in the direction from the backing layer to the piezoelectric layer, the height h1 of at least one strip-shaped part 132a is the same as that of the other strip-shaped parts 132a.
  • the heights of the bar-shaped portions 132a are different (for example, they may be set in a gradient, wherein the height of each bar-shaped portion needs to be adjusted according to actual applications), and/or, as shown in FIG.
  • the plurality of bar-shaped portions are arranged in the In the direction, the width h2 of at least one strip portion 132a is different from the widths of the other strip portions (wherein the width of each strip portion needs to be adjusted according to the actual application), and/or, as shown in FIG.
  • the side of the shaped portion 132a facing away from the backing layer is wedge-shaped (wherein the wedge-shaped angle of each strip portion needs to be specifically adjusted according to practical applications).
  • the strip portion 132a is a hollow strip portion, and/or the material of at least one strip portion is different from the material of the other strip portions.
  • the side of the acoustic metasurface 132 away from the backing layer is a wavy surface, which is not specifically limited in the present invention, and a specific shape of the acoustic metasurface is designed as required.
  • the ultrasonic transducer unit transmitted in the embodiment of the present invention includes a backing layer, a piezoelectric layer, an acoustic impedance matching layer, an acoustic metasurface, etc.
  • a physical model equivalent to its structure is established.
  • the main structure of the ultrasonic transducer unit includes a piezoelectric layer, an acoustic impedance matching layer, an acoustic metasurface and a backing layer. This will be based on the microwave transmission line theory and through the Mason electromechanical equivalent circuit to model and analyze the ultrasonic transducer.
  • the mechanical vibration of each layer will be equivalent to a part of the circuit.
  • the acoustic impedance matching network theory is applied to the parameter design of the acoustic impedance matching layer, and the transmission matrix is used to calculate the acoustic wave transmission efficiency under the action of the acoustic impedance matching layer.
  • the static capacitance C0, electromechanical conversion coefficient N, longitudinal wave velocity Cp, wave number k, and acoustic impedance Zp of the piezoelectric layer material provided by the embodiment of the present invention are respectively:
  • ⁇ , A, t p , h33 respectively represent the density, area, thickness, elastic stiffness constant, piezoelectric constant and dielectric constant of the piezoelectric layer material, and then the optimal parameters are obtained by optimizing the piezoelectric layer material.
  • the embodiment of the present invention takes the acoustic impedance matching layer including the first acoustic impedance matching sub-layer to the third acoustic impedance matching sub-layer as an example, wherein Z a is the acoustic impedance of the first acoustic impedance matching sub-layer, and Z b is the second acoustic impedance matching sub-layer.
  • the acoustic impedance of the acoustic impedance matching sub-layer Z c is the acoustic impedance of the third acoustic impedance matching sub-layer, Z l is the acoustic impedance of the propagation medium between the acoustic impedance matching layer and the target object, and ta is the first acoustic impedance matching sub-layer.
  • t b is the thickness of the second acoustic impedance matching sublayer
  • t c is the thickness of the third acoustic impedance matching sublayer
  • ka is the wavenumber of the first acoustic impedance matching sublayer
  • k b is the second acoustic impedance
  • the wave number of the matching sub-layer, k c is the wave number of the third acoustic impedance matching sub-layer
  • the equivalent input impedance of each layer matching is derived through the equivalent circuit (Zin1 is the equivalent input impedance of the first acoustic impedance matching sub-layer, Zin2 is the equivalent input impedance of the second acoustic impedance matching sublayer, and Zin3 is the equivalent input impedance of the third acoustic impedance matching sublayer) respectively:
  • the material of the acoustic impedance matching layer provided by the implementation of the present invention is a polymer material (wherein the acoustic impedance matching layer of the polymer material can be prepared by the forward growth technology of thermal evaporation coating) or a metal material (wherein The acoustic impedance matching layer of metal material can be prepared by the forward growth technology of magnetron sputtering).
  • the material of the acoustic impedance matching layer provided in the embodiment of the present invention may be parylene or gold, which may also be other materials in other embodiments of the present invention, which is not specifically limited in the present invention.
  • the acoustic metasurface provided by the embodiment of the present invention may include a circular central portion, a first annular portion, and a second annular portion, wherein the principles of Kirchhoff diffraction theory and Fresnel zone plate theory are used as the principles , to establish the theoretical model of the plane Fresnel acoustic lens of the acoustic metasurface of the circular structure. It can be seen from the half-wave band method that the acoustic artificial focusing structure parameters can make the sound field of the ultrasonic transducer unit produce a focusing effect when the following formulas are satisfied:
  • F represents the designed focal length
  • represents the wavelength of the sound wave in the transmission medium
  • the thickness h of the acoustic metasurface can be designed by the following formula:
  • the material of the acoustic metasurface provided in the embodiment of the present invention may be a polymer material, such as parylene, wherein, considering that the transmission efficiency of sound waves is also affected by the acoustic impedance of the material, Based on the theoretical calculation and finite element simulation verification of acoustic artificial structures, for example, parylene with acoustic impedance parameters closer to water is selected as the material for preparing acoustic metasurfaces.
  • high-precision photolithography micromachining technology or 3D microfabrication technology can be used. It is produced by printing technology, which ensures high production precision; this is not specifically limited in the present invention, and other materials may also be used in other embodiments of the present invention.
  • the piezoelectric layer body provided in the embodiment of the present invention is made of piezoelectric ceramic, piezoelectric ceramic composite material, pressure point single crystal material or piezoelectric single crystal composite material.
  • the backing layer of the ultrasonic transducer unit is prepared by using a material with high sound absorption performance to further reduce the size of the ultrasonic transducer unit.
  • the material of the backing layer provided in the embodiment of the present invention includes epoxy resin, And the material of the backing layer also includes at least one of tungsten powder and aluminum oxide powder. Specifically, epoxy resin, tungsten powder, and aluminum oxide powder can be formed into a mixed material.
  • an embodiment of the present invention also provides a method for manufacturing an array ultrasonic transducer, wherein the array ultrasonic transducer includes a plurality of ultrasonic transducer units arranged in an array.
  • a piezoelectric layer is formed on the side of the backing layer with the circuit layer, the piezoelectric layer includes a piezoelectric layer body, and a surface of the piezoelectric layer body on the side facing the backing layer and away from the backing layer is formed. an electrode on one side surface of the backing layer;
  • the acoustic artificial structure includes: an acoustic impedance matching layer and an acoustic metasurface grown by a forward growth process; wherein, the acoustic ultrasound The textured surface is located between the acoustic impedance matching layer and the piezoelectric layer, or the acoustic metasurface is located on the side of the acoustic impedance matching layer away from the backing layer.
  • the acoustic impedance matching layer grown by the forward growth process provided by the present invention includes:
  • the acoustic impedance matching layer is grown by a thermal evaporation coating process or a magnetron sputtering process, and a preparation process needs to be specifically selected according to the specific material of the acoustic impedance matching degree, which is not specifically limited in the present invention.
  • Embodiments of the present invention provide an array ultrasonic transducer and a manufacturing method thereof, including a plurality of ultrasonic transducer units arranged in an array, the ultrasonic transducer units comprising: a backing layer, one side of the backing layer A circuit layer is exposed on the surface; a piezoelectric layer located on the side of the backing layer with the circuit layer, the piezoelectric layer includes a piezoelectric layer body, and a piezoelectric layer located on the side of the piezoelectric layer body facing the backing layer an electrode on the surface and a surface away from the backing layer; and an acoustic artificial structure located on the side of the piezoelectric layer away from the backing layer, the acoustic artificial structure comprising: an acoustic impedance matching layer and an acoustic superstructure surface; wherein, the acoustic metasurface is located between the acoustic impedance matching layer and the piezoelectric layer, or the acoustic metasurface is located on the
  • the ultrasonic transducer unit provided by the embodiment of the present invention can solve the problem of impedance mismatch between the ultrasonic transducer unit and the target object through the acoustic impedance matching layer, and improve the output bandwidth and amplitude response of the ultrasonic transducer unit. Increase its imaging resolution and sensitivity.
  • the ultrasonic transducer unit can correct the sound field distortion generated during the adjustment of beam control, deflection, and beam focusing through the acoustic metasurface. At the same time, the imaging resolution and signal-to-noise ratio of the ultrasonic transducer unit can be further improved.
  • an array ultrasonic transducer is obtained by arranging a plurality of ultrasonic transducer units in an array, thereby improving the applicable range and performance of the array ultrasonic transducer.
  • the embodiment of the present invention uses the forward growth process to grow the acoustic impedance matching layer, thereby improving the thickness accuracy of the acoustic impedance matching layer and further improving the performance of the array ultrasonic transducer.

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Abstract

An array-type ultrasonic transducer and a manufacturing method therefor. Said transducer comprises a plurality of ultrasonic transducing units (100) in an array arrangement, and each ultrasonic transducing unit (100) comprises: a backing layer (110), a circuit layer being exposed on a surface of one side of the backing layer (110); a piezoelectric layer (120) located on the side of the backing layer (110) having the circuit layer, the piezoelectric layer (120) comprising a piezoelectric layer body and electrodes located on a surface of a side of the piezoelectric layer body facing toward the backing layer (110) and a surface of a side facing away from the backing layer (110); an acoustic artificial structure (130) located on a side of the piezoelectric layer (120) facing away from the backing layer (110), the acoustic artificial structure (130) comprising: an acoustic impedance matching layer (131) and an acoustic metasurface (132); wherein the acoustic metasurface (132) is located between the acoustic impedance matching layer (131) and the piezoelectric layer (120), or the acoustic metasurface (132) is located on a side of the acoustic impedance matching layer (131) facing away from the backing layer (110). The ultrasonic transducing units (100) can solve the problem of an impedance mismatch between an ultrasonic transducing unit (100) and a target object by means of the acoustic impedance matching layers (131), output bandwidth and amplitude response of an ultrasonic transducing unit (100) is improved, and imaging resolution and sensitivity thereof are increased.

Description

一种阵列式超声换能器及其制作方法Array type ultrasonic transducer and method of making the same 技术领域technical field
本发明涉及超声换能器技术领域,更为具体地说,涉及一种阵列式超声换能器及其制作方法。The invention relates to the technical field of ultrasonic transducers, and more particularly, to an array type ultrasonic transducer and a manufacturing method thereof.
背景技术Background technique
近年来,利用声子晶体和声学超构材料表面的新奇物理特性和效应改善超声换能器的声学匹配性能被很多学者报道。作为人工合成的复合结构材料,声学超构材料由亚波长尺度的结构单元(或称人工“原子”)组成,能够呈现出自然界中天然材料所不具备的等效材料参数,如负质量密度、负弹性模量、近零折射率和极端各向异性等。区别于声子晶体等其他人工材料,声学超构材料的宏观物理特性主要取决于其结构单元自身的局域特性而非它们之间的长程相互作用。这使得我们能够在“原子”尺度对宏观材料参数进行按需设计,并更加容易地构造空间上的梯度分布,进而实现对声波的反常操控。现有的超声换能器设备的性能有待提高。In recent years, the use of novel physical properties and effects of phononic crystals and acoustic metamaterial surfaces to improve the acoustic matching performance of ultrasonic transducers has been reported by many scholars. As synthetic composite structural materials, acoustic metamaterials are composed of sub-wavelength-scale structural units (or artificial "atoms"), which can exhibit equivalent material parameters that natural materials do not possess, such as negative mass density, Negative elastic modulus, near-zero refractive index and extreme anisotropy, etc. Different from other artificial materials such as phononic crystals, the macroscopic physical properties of acoustic metamaterials mainly depend on the local properties of their structural units rather than the long-range interactions between them. This enables us to design macroscopic material parameters on demand at the "atomic" scale, and more easily construct spatial gradient distributions, thereby enabling anomalous manipulation of acoustic waves. The performance of existing ultrasonic transducer devices has yet to be improved.
发明内容SUMMARY OF THE INVENTION
有鉴于此,本发明提供了一种阵列式超声换能器及其制作方法,有效解决现有技术存在的技术问题,本发明提供的阵列式超声换能器的性能高。In view of this, the present invention provides an array ultrasonic transducer and a manufacturing method thereof, which effectively solve the technical problems existing in the prior art, and the array ultrasonic transducer provided by the present invention has high performance.
为实现上述目的,本发明提供的技术方案如下:For achieving the above object, the technical scheme provided by the invention is as follows:
一种阵列式超声换能器,包括呈阵列排列的多个超声换能单元,所述超声换能单元包括:An array type ultrasonic transducer, comprising a plurality of ultrasonic transducer units arranged in an array, the ultrasonic transducer units comprising:
背衬层,所述背衬层一侧表面裸露线路层;a backing layer, the circuit layer is exposed on one side of the backing layer;
位于所述背衬层具有所述线路层一侧的压电层,所述压电层包括压电层本体,和位于所述压电层本体朝向所述背衬层一侧表面及背离所述背衬层一侧表面的电极;A piezoelectric layer located on the side of the backing layer with the circuit layer, the piezoelectric layer includes a piezoelectric layer body, and a surface of the piezoelectric layer body on the side facing the backing layer and away from the electrodes on one side of the backing layer;
以及,位于所述压电层背离所述背衬层一侧的声学人工结构,所述声学人工结构包括:声阻抗匹配层和声学超构表面;其中,所述声学超构表面位于所 述声阻抗匹配层与所述压电层之间,或所述声学超构表面位于所述声阻抗匹配层背离所述背衬层一侧。And, an acoustic artificial structure located on the side of the piezoelectric layer away from the backing layer, the acoustic artificial structure comprising: an acoustic impedance matching layer and an acoustic metasurface; wherein, the acoustic metasurface is located on the acoustic metasurface Between the impedance matching layer and the piezoelectric layer, or the acoustic metasurface is located on the side of the acoustic impedance matching layer away from the backing layer.
可选的,所述声阻抗匹配层包括沿所述背衬层至所述压电层方向依次叠加的第一声阻抗匹配子层至第N声阻抗匹配子层,N为大于或等于1的整数。Optionally, the acoustic impedance matching layer includes a first acoustic impedance matching sub-layer to an N-th acoustic impedance matching sub-layer that are sequentially superimposed along the direction from the backing layer to the piezoelectric layer, where N is greater than or equal to 1. Integer.
可选的,所述声学超构表面包括圆形中心部及第一圆环部至第M圆环部,M为大于或等于1的整数;所述第一圆环部环绕所述圆形中心部,第i+1圆环部环绕第i圆环部,所述第一圆环部与所述圆形中心部之间及所述第i+1圆环部与第i圆环部之间均呈环形凹槽状,i为大于或等于1且小于M的整数;Optionally, the acoustic metasurface includes a circular center portion and a first annular portion to an M-th annular portion, where M is an integer greater than or equal to 1; the first annular portion surrounds the circular center part, the i+1 th annular part surrounds the i th annular part, between the first annular part and the circular center part and between the i+1 th annular part and the i th annular part All are in the shape of annular grooves, and i is an integer greater than or equal to 1 and less than M;
或者,所述声学超构表面包括并排设置多个条形部,在所述背衬层至所述压电层方向上,至少一个条形部的高度与其余条形部的高度不同,和/或,在所述多个条形部排列方向上,至少一个条形部的宽度与其余条形部的宽度不同,和/或,所述条形部背离所述背衬层一侧呈楔形,和/或,所述条形部为中空条形部,和/或,至少一个条形部的材质与其余条形部的材质不同;Alternatively, the acoustic metasurface comprises arranging a plurality of strips side by side, at least one strip having a height different from the rest of the strips in the direction from the backing layer to the piezoelectric layer, and/ Or, in the arrangement direction of the plurality of strip-shaped parts, the width of at least one strip-shaped part is different from the width of the other strip-shaped parts, and/or the side of the strip-shaped part facing away from the backing layer is wedge-shaped, And/or, the strip part is a hollow strip part, and/or, the material of at least one strip part is different from the material of the other strip parts;
或者,所述声学超构表面背离所述背衬层一侧为波浪形表面。Alternatively, the side of the acoustic metasurface facing away from the backing layer is a wavy surface.
可选的,所述声阻抗匹配层的材质为高分子材质或金属材质。Optionally, the material of the acoustic impedance matching layer is a polymer material or a metal material.
可选的,所述声学超构表面的材质为聚合物材质。Optionally, the material of the acoustic metasurface is a polymer material.
可选的,所述压电层本体的为压电陶瓷、压电陶瓷复合材质、压点单晶材质或压电单晶复合材质。Optionally, the piezoelectric layer body is made of piezoelectric ceramic, piezoelectric ceramic composite material, pressure point single crystal material or piezoelectric single crystal composite material.
可选的,所述背衬层的材质包括环氧树脂,且所述背衬层的材质还包括钨粉、氧化铝粉中至少一种。Optionally, the material of the backing layer includes epoxy resin, and the material of the backing layer further includes at least one of tungsten powder and alumina powder.
可选的,所述多个超声换能单元呈矩阵排列。Optionally, the plurality of ultrasonic transducer units are arranged in a matrix.
相应的,本发明还提供了一种阵列式超声换能器的制作方法,所述阵列式超声换能器包括呈阵列排列的多个超声换能单元,所述超声换能单元的制作方法:Correspondingly, the present invention also provides a manufacturing method of an array ultrasonic transducer, wherein the array ultrasonic transducer includes a plurality of ultrasonic transducer units arranged in an array, and the fabrication method of the ultrasonic transducer unit:
形成背衬层,所述背衬层一侧表面裸露线路层;forming a backing layer, and the circuit layer is exposed on one side of the backing layer;
形成位于所述背衬层具有所述线路层一侧的压电层,所述压电层包括压电层本体,和位于所述压电层本体朝向所述背衬层一侧表面及背离所述背衬层一侧表面的电极;A piezoelectric layer is formed on the side of the backing layer with the circuit layer, the piezoelectric layer includes a piezoelectric layer body, and a surface of the piezoelectric layer body on the side facing the backing layer and away from the backing layer is formed. an electrode on one side surface of the backing layer;
形成位于所述压电层背离所述背衬层一侧的声学人工结构,所述声学人工结构包括:采用正向生长工艺生长的声阻抗匹配层和声学超构表面;其中,所述声学超构表面位于所述声阻抗匹配层与所述压电层之间,或所述声学超构表面位于所述声阻抗匹配层背离所述背衬层一侧。forming an acoustic artificial structure on the side of the piezoelectric layer away from the backing layer, the acoustic artificial structure includes: an acoustic impedance matching layer and an acoustic metasurface grown by a forward growth process; wherein, the acoustic ultrasound The textured surface is located between the acoustic impedance matching layer and the piezoelectric layer, or the acoustic metasurface is located on the side of the acoustic impedance matching layer away from the backing layer.
可选的,所述采用正向生长工艺生长的声阻抗匹配层,包括:Optionally, the acoustic impedance matching layer grown by the forward growth process includes:
采用热蒸发镀膜工艺或磁控溅射工艺生长所述声阻抗匹配层。The acoustic impedance matching layer is grown by a thermal evaporation coating process or a magnetron sputtering process.
相较于现有技术,本发明提供的技术方案至少具有以下优点:Compared with the prior art, the technical solution provided by the present invention has at least the following advantages:
本发明提供了一种阵列式超声换能器及其制作方法,包括呈阵列排列的多个超声换能单元,所述超声换能单元包括:背衬层,所述背衬层一侧表面裸露线路层;位于所述背衬层具有所述线路层一侧的压电层,所述压电层包括压电层本体,和位于所述压电层本体朝向所述背衬层一侧表面及背离所述背衬层一侧表面的电极;以及,位于所述压电层背离所述背衬层一侧的声学人工结构,所述声学人工结构包括:声阻抗匹配层和声学超构表面;其中,所述声学超构表面位于所述声阻抗匹配层与所述压电层之间,或所述声学超构表面位于所述声阻抗匹配层背离所述背衬层一侧。The invention provides an array type ultrasonic transducer and a manufacturing method thereof, comprising a plurality of ultrasonic transducer units arranged in an array, wherein the ultrasonic transducer unit comprises: a backing layer, and one side surface of the backing layer is exposed circuit layer; a piezoelectric layer located on the side of the backing layer with the circuit layer, the piezoelectric layer includes a piezoelectric layer body, and a surface located on the side of the piezoelectric layer body facing the backing layer and an electrode facing away from the side surface of the backing layer; and an acoustic artificial structure located on the side of the piezoelectric layer facing away from the backing layer, the acoustic artificial structure comprising: an acoustic impedance matching layer and an acoustic metasurface; Wherein, the acoustic metasurface is located between the acoustic impedance matching layer and the piezoelectric layer, or the acoustic metasurface is located on the side of the acoustic impedance matching layer away from the backing layer.
由上述内容可知,本发明提供的超声换能单元能够通过声阻抗匹配层解决超声换能单元与目标物体之间阻抗不匹配的问题,提高超声换能单元的输出带宽和幅值响应,增大其成像分辨率和灵敏度。并且超声换能单元能够通过声学超构表面实现对波束控制及偏转、波束聚焦等调节时产生声场畸变进行矫正,同时,实现超声换能单元成像分辨率及信噪比的进一步提升。以及通过将多个超声换能单元呈阵列排布得到阵列式超声换能器,进而提高阵列式超声换能器的适用范围和性能。同时,本发明采用正向生长工艺生长声阻抗匹配层,进而能够提高声阻抗匹配层的厚度精准度,进一步提高阵列式超声换能器的性能。It can be seen from the above that the ultrasonic transducer unit provided by the present invention can solve the problem of impedance mismatch between the ultrasonic transducer unit and the target object through the acoustic impedance matching layer, improve the output bandwidth and amplitude response of the ultrasonic transducer unit, and increase the Its imaging resolution and sensitivity. In addition, the ultrasonic transducer unit can correct the sound field distortion generated during the adjustment of beam control, deflection, and beam focusing through the acoustic metasurface. At the same time, the imaging resolution and signal-to-noise ratio of the ultrasonic transducer unit can be further improved. And an array ultrasonic transducer is obtained by arranging a plurality of ultrasonic transducer units in an array, thereby improving the applicable range and performance of the array ultrasonic transducer. At the same time, the present invention uses the forward growth process to grow the acoustic impedance matching layer, thereby improving the thickness accuracy of the acoustic impedance matching layer and further improving the performance of the array ultrasonic transducer.
附图说明Description of drawings
图1为本发明实施例提供的一种阵列式超声换能器的结构示意图;1 is a schematic structural diagram of an array ultrasonic transducer provided by an embodiment of the present invention;
图2为本发明实施例提供的一种超声换能单元的结构示意图;2 is a schematic structural diagram of an ultrasonic transducer unit according to an embodiment of the present invention;
图3为本发明实施例提供的另一种超声换能单元的结构示意图;3 is a schematic structural diagram of another ultrasonic transducer unit provided by an embodiment of the present invention;
图4为本发明实施例提供的又一种超声换能单元的结构示意图;4 is a schematic structural diagram of another ultrasonic transducer unit provided by an embodiment of the present invention;
图5a为本发明实施例提供的一种声学超构表面的结构示意图;5a is a schematic structural diagram of an acoustic metasurface provided by an embodiment of the present invention;
图5b为图5a中AA’方向切面图;Figure 5b is a sectional view in the direction of AA' in Figure 5a;
图6为本发明实施例提供的另一种声学超构表面的结构示意图;6 is a schematic structural diagram of another acoustic metasurface provided by an embodiment of the present invention;
图7为本发明实施例提供的又一种声学超构表面的结构示意图;7 is a schematic structural diagram of yet another acoustic metasurface provided by an embodiment of the present invention;
图8为本发明实施例提供的又一种声学超构表面的结构示意图;8 is a schematic structural diagram of yet another acoustic metasurface provided by an embodiment of the present invention;
图9为本发明实施例提供的又一种声学超构表面的结构示意图;9 is a schematic structural diagram of another acoustic metasurface provided by an embodiment of the present invention;
图10为本发明实施例提供的又一种声学超构表面的结构示意图;10 is a schematic structural diagram of yet another acoustic metasurface provided by an embodiment of the present invention;
图11为本发明实施例提供的又一种声学超构表面的结构示意图。FIG. 11 is a schematic structural diagram of still another acoustic metasurface provided by an embodiment of the present invention.
具体实施方式Detailed ways
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
正如背景技术所述,近年来,利用声学超构材料的新奇物理特性和效应改善超声换能器的声学匹配性能被很多学者报道。超声换能器是超声设备中关键的部件,可以用于超声成像、超声刺激、超声治疗、声学操控等等。现有的超声换能器设备的性能有待提高。As mentioned in the background art, in recent years, many scholars have reported using the novel physical properties and effects of acoustic metamaterials to improve the acoustic matching performance of ultrasonic transducers. Ultrasound transducers are key components in ultrasound equipment and can be used for ultrasound imaging, ultrasound stimulation, ultrasound therapy, acoustic manipulation, and more. The performance of existing ultrasonic transducer devices has yet to be improved.
基于此,本发明实施例提供了一种阵列式超声换能器及其制作方法,有效解决现有技术存在的技术问题,本发明实施例提供的阵列式超声换能器的性能高。Based on this, the embodiments of the present invention provide an array ultrasonic transducer and a manufacturing method thereof, which effectively solve the technical problems existing in the prior art, and the array ultrasonic transducer provided by the embodiments of the present invention has high performance.
为实现上述目的,本发明实施例提供的技术方案如下,具体结合图1至图11对本发明实施例提供的技术方案进行详细的描述。To achieve the above purpose, the technical solutions provided by the embodiments of the present invention are as follows, and the technical solutions provided by the embodiments of the present invention are described in detail with reference to FIG. 1 to FIG. 11 .
结合图1至图3所示,图1为本发明实施例提供的一种阵列式超声换能器的结构示意图,图2为本发明实施例提供的一种超声换能单元的结构示意图,图3为本发明实施例提供的另一种超声换能单元的结构示意图。其中,阵列式超声换能器包括呈阵列排列的多个超声换能单元100,所述超声换能单元包括:1 to 3, FIG. 1 is a schematic structural diagram of an array ultrasonic transducer provided by an embodiment of the present invention, and FIG. 2 is a structural schematic diagram of an ultrasonic transducer unit provided by an embodiment of the present invention. 3 is a schematic structural diagram of another ultrasonic transducer unit provided in an embodiment of the present invention. The array type ultrasonic transducer includes a plurality of ultrasonic transducer units 100 arranged in an array, and the ultrasonic transducer units include:
背衬层110,所述背衬层110一侧表面裸露线路层。The backing layer 110 has a bare circuit layer on one surface of the backing layer 110 .
位于所述背衬层110具有所述线路层一侧的压电层120,所述压电层120包括压电层本体,和位于所述压电层本体朝向所述背衬层110一侧表面及背离所述背衬层110一侧表面的电极。The backing layer 110 has a piezoelectric layer 120 on one side of the circuit layer, the piezoelectric layer 120 includes a piezoelectric layer body, and a surface of the piezoelectric layer body on the side facing the backing layer 110 and an electrode facing away from the surface of the backing layer 110 .
以及,位于所述压电层120背离所述背衬层110一侧的声学人工结构130,所述声学人工结构130包括:声阻抗匹配层131和声学超构表面132;其中,所述声学超构表面132位于所述声阻抗匹配层131与所述压电层120之间(如图2所示)。或所述声学超构表面132位于所述声阻抗匹配层131背离所述背衬层110一侧(如图3所示)。And, the acoustic artificial structure 130 located on the side of the piezoelectric layer 120 away from the backing layer 110, the acoustic artificial structure 130 includes: an acoustic impedance matching layer 131 and an acoustic metasurface 132; wherein, the acoustic ultrasound The structured surface 132 is located between the acoustic impedance matching layer 131 and the piezoelectric layer 120 (as shown in FIG. 2 ). Or the acoustic metasurface 132 is located on the side of the acoustic impedance matching layer 131 away from the backing layer 110 (as shown in FIG. 3 ).
在本发明一实施例中,本发明提供的所述多个超声换能单元可以呈矩阵排列,对此本发明不做具体限制。In an embodiment of the present invention, the plurality of ultrasonic transducer units provided by the present invention may be arranged in a matrix, which is not specifically limited by the present invention.
可以理解的,本发明实施例提供的超声换能单元能够通过声阻抗匹配层解决超声换能单元与目标物体之间阻抗不匹配的问题,提高超声换能单元的输出带宽和幅值响应,增大其成像分辨率和灵敏度。并且超声换能单元能够通过声学超构表面实现对波束控制及偏转、波束聚焦等调节时产生声场畸变进行矫正,同时,实现超声换能单元成像分辨率及信噪比的进一步提升。以及通过将多个超声换能单元呈阵列排布得到阵列式超声换能器,进而提高阵列式超声换能器的适用范围和性能。同时,本发明实施例采用正向生长工艺生长声阻抗匹配层,进而能够提高声阻抗匹配层的厚度精准度,进一步提高阵列式超声换能器的性能。It can be understood that the ultrasonic transducer unit provided by the embodiment of the present invention can solve the problem of impedance mismatch between the ultrasonic transducer unit and the target object through the acoustic impedance matching layer, improve the output bandwidth and amplitude response of the ultrasonic transducer unit, and increase the performance of the ultrasonic transducer unit. Great for its imaging resolution and sensitivity. In addition, the ultrasonic transducer unit can correct the sound field distortion generated during the adjustment of beam control, deflection, and beam focusing through the acoustic metasurface. At the same time, the imaging resolution and signal-to-noise ratio of the ultrasonic transducer unit can be further improved. And an array ultrasonic transducer is obtained by arranging a plurality of ultrasonic transducer units in an array, thereby improving the applicable range and performance of the array ultrasonic transducer. Meanwhile, the embodiment of the present invention uses the forward growth process to grow the acoustic impedance matching layer, thereby improving the thickness accuracy of the acoustic impedance matching layer and further improving the performance of the array ultrasonic transducer.
进一步的,本发明实施例提供的超声换能单元还能够通过声学人工结构实现突破衍射极限的亚波长聚焦和超成像效应。Further, the ultrasonic transducer unit provided by the embodiment of the present invention can also achieve sub-wavelength focusing and super-imaging effects that break through the diffraction limit through an acoustic artificial structure.
在本发明一实施例中,本发明实施例提供的声阻抗匹配层用于匹配超声换能单元与目标物体之间阻抗,其中声阻抗匹配单元可以为单层结构,或者声阻抗匹配单元还可以为多个叠层结构。如图4所示,为本发明实施例提供的又一种超声换能单元的结构示意图,其中,本发明实施例提供的所述声阻抗匹配层131包括沿所述背衬层110至所述压电层120方向依次叠加的第一声阻抗匹配子层1311至第N声阻抗匹配子层131n,N为大于或等于1的整数。In an embodiment of the present invention, the acoustic impedance matching layer provided by the embodiment of the present invention is used to match the impedance between the ultrasonic transducer unit and the target object, wherein the acoustic impedance matching unit may be a single-layer structure, or the acoustic impedance matching unit may also for multiple stacked structures. As shown in FIG. 4 , it is a schematic structural diagram of still another ultrasonic transducer unit provided by an embodiment of the present invention, wherein the acoustic impedance matching layer 131 provided by the embodiment of the present invention includes the backing layer 110 to the From the first acoustic impedance matching sub-layer 1311 to the N-th acoustic impedance matching sub-layer 131n that are sequentially stacked in the direction of the piezoelectric layer 120 , N is an integer greater than or equal to 1.
在本发明一实施例中,本发明实施例提供的声学超构表面用于改变声波的传输特性,如任意点反射聚焦、低频完美吸声、自弯曲声束、螺旋声波以及声能量非对称传输等,对此本发明实施例对声学超构表面的结构不做具体限制,其可以为多圈嵌套结构、多层结构、梯度结构等。如图5a和图5b所示,图5a为本发明实施例提供的一种声学超构表面的结构示意图,图5b为图5a中沿AA’方向切面图,其中本发明实施例提供的所述声学超构表面132包括圆形中心部1320及第一圆环部1321至第M圆环部132m,M为大于或等于1的整数。In an embodiment of the present invention, the acoustic metasurface provided by the embodiment of the present invention is used to change the transmission characteristics of sound waves, such as reflection and focusing at any point, perfect low-frequency sound absorption, self-bending sound beams, spiral sound waves, and asymmetric transmission of sound energy etc., the embodiments of the present invention do not specifically limit the structure of the acoustic metasurface, which may be a multi-circle nested structure, a multi-layer structure, a gradient structure, or the like. As shown in Fig. 5a and Fig. 5b, Fig. 5a is a schematic structural diagram of an acoustic metasurface provided by an embodiment of the present invention, and Fig. 5b is a cross-sectional view along the AA' direction in Fig. 5a, wherein the The acoustic metasurface 132 includes a circular central portion 1320 and a first annular portion 1321 to an M-th annular portion 132m, where M is an integer greater than or equal to 1.
所述第一圆环部1321环绕所述圆形中心部1320,第i+1圆环部环绕第i圆环部,所述第一圆环部1321与所述圆形中心部1320之间及所述第i+1圆环部与第i圆环部之间均呈环形凹槽状,i为大于或等于1且小于M的整数。The first annular portion 1321 surrounds the circular central portion 1320 , the i+1-th annular portion surrounds the i-th annular portion, and the distance between the first annular portion 1321 and the circular central portion 1320 Both the i+1 th annular portion and the i th annular portion are in the shape of an annular groove, and i is an integer greater than or equal to 1 and less than M.
可以理解的,本发明实施例提供的第一圆环部与圆形中心部之间的凹槽结构,及第i+1圆环部与第i圆环部之间的凹槽结构的深度不做具体限制,其可以穿透声学超构表面,对此需要根据实际应用进行具体设计。It can be understood that the depth of the groove structure between the first annular portion and the circular center portion provided by the embodiment of the present invention and the depth of the groove structure between the i+1 th annular portion and the i th annular portion are different. To make specific restrictions, it can penetrate the acoustic metasurface, which needs to be specifically designed according to the actual application.
或者,如图6所示,所述声学超构表面包括并排设置多个条形部132a,在所述背衬层至所述压电层方向上,至少一个条形部132a的高度h1与其余条形部132a的高度不同(如具体可以呈梯度设置,其中各个条形部的高度需要根据实际应用进行具体调整),和/或,如图7所示,在所述多个条形部排列方向上,至少一个条形部132a的宽度h2与其余条形部的宽度不同(其中各个条形部的宽度需要根据实际应用进行具体调整),和/或,如图8所示,所述条形部132a背离所述背衬层一侧呈楔形(其中各个条形部的楔形角度需要根据实际应用进行具体调整)。和/或,如图9所示,所述条形部132a为中空条形部,和/或,至少一个条形部的材质与其余条形部的材质不同。Alternatively, as shown in FIG. 6 , the acoustic metasurface includes a plurality of strip-shaped parts 132a arranged side by side, and in the direction from the backing layer to the piezoelectric layer, the height h1 of at least one strip-shaped part 132a is the same as that of the other strip-shaped parts 132a. The heights of the bar-shaped portions 132a are different (for example, they may be set in a gradient, wherein the height of each bar-shaped portion needs to be adjusted according to actual applications), and/or, as shown in FIG. 7 , the plurality of bar-shaped portions are arranged in the In the direction, the width h2 of at least one strip portion 132a is different from the widths of the other strip portions (wherein the width of each strip portion needs to be adjusted according to the actual application), and/or, as shown in FIG. The side of the shaped portion 132a facing away from the backing layer is wedge-shaped (wherein the wedge-shaped angle of each strip portion needs to be specifically adjusted according to practical applications). And/or, as shown in FIG. 9 , the strip portion 132a is a hollow strip portion, and/or the material of at least one strip portion is different from the material of the other strip portions.
或者,如图10所示,所述声学超构表面132背离所述背衬层一侧为波浪形表面,对此本发明不做具体限制,根据需要对声学超构表面进行具体形状的设计。Alternatively, as shown in FIG. 10 , the side of the acoustic metasurface 132 away from the backing layer is a wavy surface, which is not specifically limited in the present invention, and a specific shape of the acoustic metasurface is designed as required.
本发明实施例透过的超声换能单元包括有背衬层、压电层、声阻抗匹配层、声学超构表面等,为了研究各层结构对于超声换能单元的电学和声学性能的影响,首先建立与之结构等效的物理模型。其中,超声换能单元主要的结构包含 压电层、声阻抗匹配层、声学超构表面和背衬层,对此将基于微波传输线理论并通过Mason机电等效电路,以建模分析超声换能单元的声阻抗匹配与各层结构参数之间的关系。每一层的机械振动都会被等效成电路的一部分,声阻抗匹配网络理论被应用于声阻抗匹配层的参数设计,同时利用传输矩阵来计算声阻抗匹配层作用下的声波传输效率。其中,本发明实施例提供的压电层材料的静态电容C0、机电转换系数N、纵向波速Cp、波数k和声阻抗分别Zp为:The ultrasonic transducer unit transmitted in the embodiment of the present invention includes a backing layer, a piezoelectric layer, an acoustic impedance matching layer, an acoustic metasurface, etc. In order to study the influence of each layer structure on the electrical and acoustic performance of the ultrasonic transducer unit, First, a physical model equivalent to its structure is established. Among them, the main structure of the ultrasonic transducer unit includes a piezoelectric layer, an acoustic impedance matching layer, an acoustic metasurface and a backing layer. This will be based on the microwave transmission line theory and through the Mason electromechanical equivalent circuit to model and analyze the ultrasonic transducer. The relationship between the acoustic impedance matching of the unit and the structural parameters of each layer. The mechanical vibration of each layer will be equivalent to a part of the circuit. The acoustic impedance matching network theory is applied to the parameter design of the acoustic impedance matching layer, and the transmission matrix is used to calculate the acoustic wave transmission efficiency under the action of the acoustic impedance matching layer. Wherein, the static capacitance C0, electromechanical conversion coefficient N, longitudinal wave velocity Cp, wave number k, and acoustic impedance Zp of the piezoelectric layer material provided by the embodiment of the present invention are respectively:
Figure PCTCN2020130397-appb-000001
Figure PCTCN2020130397-appb-000001
Figure PCTCN2020130397-appb-000002
Figure PCTCN2020130397-appb-000002
Figure PCTCN2020130397-appb-000003
Figure PCTCN2020130397-appb-000003
k=ω/c p k =ω/cp
Z p=ρc p Z p = ρc p
式中ρ、A、t p
Figure PCTCN2020130397-appb-000004
h 33
Figure PCTCN2020130397-appb-000005
分别代表压电层材料的密度、面积、厚度、弹性刚度常数、压电常数和介电常数,进而通过优化压电层的材料得到最优参数。
where ρ, A, t p ,
Figure PCTCN2020130397-appb-000004
h33 ,
Figure PCTCN2020130397-appb-000005
respectively represent the density, area, thickness, elastic stiffness constant, piezoelectric constant and dielectric constant of the piezoelectric layer material, and then the optimal parameters are obtained by optimizing the piezoelectric layer material.
以及,本发明实施例以声阻抗匹配层包括第一声阻抗匹配子层至第三声阻抗匹配子层为例,其中Z a为第一声阻抗匹配子层的声阻抗,Z b为第二声阻抗匹配子层的声阻抗、Z c为第三声阻抗匹配子层的声阻抗,Z l为声阻抗匹配层与目标物体之间传播介质的声阻抗,t a为第一声阻抗匹配子层的厚度,t b为第二声阻抗匹配子层的厚度,t c为第三声阻抗匹配子层的厚度,k a为第一声阻抗匹配子层的波数,k b为第二声阻抗匹配子层的波数,k c为第三声阻抗匹配子层的波数,通过等效电路推导出每一层匹配的等效输入阻抗(Zin1为第一声阻抗匹配子层的等效输入阻抗,Zin2为第二声阻抗匹配子层的等效输入阻抗,Zin3为第三声阻抗匹配子层的等效输入阻抗)的分别为: And, the embodiment of the present invention takes the acoustic impedance matching layer including the first acoustic impedance matching sub-layer to the third acoustic impedance matching sub-layer as an example, wherein Z a is the acoustic impedance of the first acoustic impedance matching sub-layer, and Z b is the second acoustic impedance matching sub-layer. The acoustic impedance of the acoustic impedance matching sub-layer, Z c is the acoustic impedance of the third acoustic impedance matching sub-layer, Z l is the acoustic impedance of the propagation medium between the acoustic impedance matching layer and the target object, and ta is the first acoustic impedance matching sub-layer. layer thickness, t b is the thickness of the second acoustic impedance matching sublayer, t c is the thickness of the third acoustic impedance matching sublayer, ka is the wavenumber of the first acoustic impedance matching sublayer, and k b is the second acoustic impedance The wave number of the matching sub-layer, k c is the wave number of the third acoustic impedance matching sub-layer, and the equivalent input impedance of each layer matching is derived through the equivalent circuit (Zin1 is the equivalent input impedance of the first acoustic impedance matching sub-layer, Zin2 is the equivalent input impedance of the second acoustic impedance matching sublayer, and Zin3 is the equivalent input impedance of the third acoustic impedance matching sublayer) respectively:
Figure PCTCN2020130397-appb-000006
Figure PCTCN2020130397-appb-000006
Figure PCTCN2020130397-appb-000007
Figure PCTCN2020130397-appb-000007
Figure PCTCN2020130397-appb-000008
Figure PCTCN2020130397-appb-000008
经过计算从而确定各声阻抗匹配子层的材料选择及厚度参数,再通过有限元仿真软件(如COMSOL Multiphysics)建立有限元模型进行声场分析,进一步优化声阻抗匹配层的效果。可选的,本发明实施提供的所述声阻抗匹配层的材质为高分子材质(其中高分子材质的声阻抗匹配层可以采用热蒸发镀膜的正向生长技术制备而成)或金属材质(其中金属材质的声阻抗匹配层可以采用磁控溅射的正向生长技术制备而成)。具体的,本发明实施例提供的声阻抗匹配层的材质可以为聚对二甲苯或金,对此在本发明其他实施例中还可以为其他材质,本发明不做具体限制。After calculation, the material selection and thickness parameters of each acoustic impedance matching sub-layer are determined, and then a finite element model is established through finite element simulation software (such as COMSOL Multiphysics) for sound field analysis to further optimize the effect of the acoustic impedance matching layer. Optionally, the material of the acoustic impedance matching layer provided by the implementation of the present invention is a polymer material (wherein the acoustic impedance matching layer of the polymer material can be prepared by the forward growth technology of thermal evaporation coating) or a metal material (wherein The acoustic impedance matching layer of metal material can be prepared by the forward growth technology of magnetron sputtering). Specifically, the material of the acoustic impedance matching layer provided in the embodiment of the present invention may be parylene or gold, which may also be other materials in other embodiments of the present invention, which is not specifically limited in the present invention.
以及,本发明实施例提供的声学超构表面可以包括圆形中心部、第一圆环部和第二圆环部,其中,以基尔霍夫衍射理论和菲涅尔波带片理论为原理,建立该圆形结构声学超构表面的平面菲涅尔声学透镜的理论模型,由半波带法可知,声学人工聚焦结构参数满足如下公式时可以让超声换能单元的声场产生聚焦的效果:And, the acoustic metasurface provided by the embodiment of the present invention may include a circular central portion, a first annular portion, and a second annular portion, wherein the principles of Kirchhoff diffraction theory and Fresnel zone plate theory are used as the principles , to establish the theoretical model of the plane Fresnel acoustic lens of the acoustic metasurface of the circular structure. It can be seen from the half-wave band method that the acoustic artificial focusing structure parameters can make the sound field of the ultrasonic transducer unit produce a focusing effect when the following formulas are satisfied:
Figure PCTCN2020130397-appb-000009
Figure PCTCN2020130397-appb-000009
其中F代表设计的焦距,λ代表声波在传输介质中的波长,m(m=1,2,3…)代表圆形结构的圈数(即圆形中心部为第一圈、第一环形部为第二圈,以此类推,如图11所示),圈数越多声波的传输效率越高,但同时菲涅尔声学透镜的制作也会变得复杂。例如,在超声换能单元上制备m(例如m=3)圈的声学超构表面时,声学超构表面的厚度h可以通过如下公式设计:Among them, F represents the designed focal length, λ represents the wavelength of the sound wave in the transmission medium, and m (m=1, 2, 3...) represents the number of turns of the circular structure (that is, the central part of the circle is the first circle, the first annular part For the second circle, and so on, as shown in Figure 11), the more the number of circles, the higher the transmission efficiency of the sound wave, but at the same time the fabrication of the Fresnel acoustic lens will become more complicated. For example, when m (for example, m=3) circles of acoustic metasurface are prepared on the ultrasonic transducer unit, the thickness h of the acoustic metasurface can be designed by the following formula:
Figure PCTCN2020130397-appb-000010
Figure PCTCN2020130397-appb-000010
其中c0为超声换能单元与目标物体之间传播介质的声速,c1为声学超构表面的材料的声速,
Figure PCTCN2020130397-appb-000011
表示声波透过声学超构表面射出时的相位变化。可选的,本发明实施例提供的所述声学超构表面的材质为可以为聚合物材质,具体如聚对二甲苯,其中,考虑到声波的传输效率还同时受到材料声阻抗的影响,在基于声学人工结构的理论计算和有限元仿真验证基础上,例如选择声阻抗参数更接近水的聚对二甲苯作为制备声学超构表面的材料,具体可以采用高精度的光 刻微加工技术或3D打印技术制作而成,保证制作精度高;对此本发明不做具体限制,在本发明其他实施例中,还可以为其他材质。
where c0 is the sound speed of the propagation medium between the ultrasonic transducer unit and the target object, c1 is the sound speed of the material of the acoustic metasurface,
Figure PCTCN2020130397-appb-000011
Represents the phase change of a sound wave as it exits through an acoustic metasurface. Optionally, the material of the acoustic metasurface provided in the embodiment of the present invention may be a polymer material, such as parylene, wherein, considering that the transmission efficiency of sound waves is also affected by the acoustic impedance of the material, Based on the theoretical calculation and finite element simulation verification of acoustic artificial structures, for example, parylene with acoustic impedance parameters closer to water is selected as the material for preparing acoustic metasurfaces. Specifically, high-precision photolithography micromachining technology or 3D microfabrication technology can be used. It is produced by printing technology, which ensures high production precision; this is not specifically limited in the present invention, and other materials may also be used in other embodiments of the present invention.
此外,本发明实施例提供的所述压电层本体的为压电陶瓷、压电陶瓷复合材质、压点单晶材质或压电单晶复合材质。以及,利用高吸声性能材料制备超声换能单元的背衬层,进一步减小超声换能单元的尺寸,可选的,本发明实施例提供的所述背衬层的材质包括环氧树脂,且所述背衬层的材质还包括钨粉、氧化铝粉中至少一种,具体如可以将环氧树脂、钨粉、氧化铝粉形成混合材料。In addition, the piezoelectric layer body provided in the embodiment of the present invention is made of piezoelectric ceramic, piezoelectric ceramic composite material, pressure point single crystal material or piezoelectric single crystal composite material. And, the backing layer of the ultrasonic transducer unit is prepared by using a material with high sound absorption performance to further reduce the size of the ultrasonic transducer unit. Optionally, the material of the backing layer provided in the embodiment of the present invention includes epoxy resin, And the material of the backing layer also includes at least one of tungsten powder and aluminum oxide powder. Specifically, epoxy resin, tungsten powder, and aluminum oxide powder can be formed into a mixed material.
相应的,本发明实施例还提供了一种阵列式超声换能器的制作方法,所述阵列式超声换能器包括呈阵列排列的多个超声换能单元,所述超声换能单元的制作方法:Correspondingly, an embodiment of the present invention also provides a method for manufacturing an array ultrasonic transducer, wherein the array ultrasonic transducer includes a plurality of ultrasonic transducer units arranged in an array. method:
形成背衬层,所述背衬层一侧表面裸露线路层;forming a backing layer, and the circuit layer is exposed on one side of the backing layer;
形成位于所述背衬层具有所述线路层一侧的压电层,所述压电层包括压电层本体,和位于所述压电层本体朝向所述背衬层一侧表面及背离所述背衬层一侧表面的电极;A piezoelectric layer is formed on the side of the backing layer with the circuit layer, the piezoelectric layer includes a piezoelectric layer body, and a surface of the piezoelectric layer body on the side facing the backing layer and away from the backing layer is formed. an electrode on one side surface of the backing layer;
形成位于所述压电层背离所述背衬层一侧的声学人工结构,所述声学人工结构包括:采用正向生长工艺生长的声阻抗匹配层和声学超构表面;其中,所述声学超构表面位于所述声阻抗匹配层与所述压电层之间,或所述声学超构表面位于所述声阻抗匹配层背离所述背衬层一侧。forming an acoustic artificial structure on the side of the piezoelectric layer away from the backing layer, the acoustic artificial structure includes: an acoustic impedance matching layer and an acoustic metasurface grown by a forward growth process; wherein, the acoustic ultrasound The textured surface is located between the acoustic impedance matching layer and the piezoelectric layer, or the acoustic metasurface is located on the side of the acoustic impedance matching layer away from the backing layer.
可以理解的,采用上述制作方法得到多个超声换能单元后,将所有超声换能单元按照预设的排列方式排列,得到阵列式超声换能器。It can be understood that, after a plurality of ultrasonic transducer units are obtained by the above manufacturing method, all ultrasonic transducer units are arranged in a preset arrangement to obtain an array ultrasonic transducer.
在本发明一实施例中,本发明所提供的所述采用正向生长工艺生长的声阻抗匹配层,包括:In an embodiment of the present invention, the acoustic impedance matching layer grown by the forward growth process provided by the present invention includes:
采用热蒸发镀膜工艺或磁控溅射工艺生长所述声阻抗匹配层,对此需要根据声阻抗匹配度的具体材质具体选择制备工艺,本发明不做具体限制。The acoustic impedance matching layer is grown by a thermal evaporation coating process or a magnetron sputtering process, and a preparation process needs to be specifically selected according to the specific material of the acoustic impedance matching degree, which is not specifically limited in the present invention.
本发明实施例提供了一种阵列式超声换能器及其制作方法,包括呈阵列排列的多个超声换能单元,所述超声换能单元包括:背衬层,所述背衬层一侧表面裸露线路层;位于所述背衬层具有所述线路层一侧的压电层,所述压电层包括压电层本体,和位于所述压电层本体朝向所述背衬层一侧表面及背离所述背 衬层一侧表面的电极;以及,位于所述压电层背离所述背衬层一侧的声学人工结构,所述声学人工结构包括:声阻抗匹配层和声学超构表面;其中,所述声学超构表面位于所述声阻抗匹配层与所述压电层之间,或所述声学超构表面位于所述声阻抗匹配层背离所述背衬层一侧。Embodiments of the present invention provide an array ultrasonic transducer and a manufacturing method thereof, including a plurality of ultrasonic transducer units arranged in an array, the ultrasonic transducer units comprising: a backing layer, one side of the backing layer A circuit layer is exposed on the surface; a piezoelectric layer located on the side of the backing layer with the circuit layer, the piezoelectric layer includes a piezoelectric layer body, and a piezoelectric layer located on the side of the piezoelectric layer body facing the backing layer an electrode on the surface and a surface away from the backing layer; and an acoustic artificial structure located on the side of the piezoelectric layer away from the backing layer, the acoustic artificial structure comprising: an acoustic impedance matching layer and an acoustic superstructure surface; wherein, the acoustic metasurface is located between the acoustic impedance matching layer and the piezoelectric layer, or the acoustic metasurface is located on the side of the acoustic impedance matching layer away from the backing layer.
由上述内容可知,本发明实施例提供的超声换能单元能够通过声阻抗匹配层解决超声换能单元与目标物体之间阻抗不匹配的问题,提高超声换能单元的输出带宽和幅值响应,增大其成像分辨率和灵敏度。并且超声换能单元能够通过声学超构表面实现对波束控制及偏转、波束聚焦等调节时产生声场畸变进行矫正,同时,实现超声换能单元成像分辨率及信噪比的进一步提升。以及通过将多个超声换能单元呈阵列排布得到阵列式超声换能器,进而提高阵列式超声换能器的适用范围和性能。同时,本发明实施例采用正向生长工艺生长声阻抗匹配层,进而能够提高声阻抗匹配层的厚度精准度,进一步提高阵列式超声换能器的性能。It can be seen from the above that the ultrasonic transducer unit provided by the embodiment of the present invention can solve the problem of impedance mismatch between the ultrasonic transducer unit and the target object through the acoustic impedance matching layer, and improve the output bandwidth and amplitude response of the ultrasonic transducer unit. Increase its imaging resolution and sensitivity. In addition, the ultrasonic transducer unit can correct the sound field distortion generated during the adjustment of beam control, deflection, and beam focusing through the acoustic metasurface. At the same time, the imaging resolution and signal-to-noise ratio of the ultrasonic transducer unit can be further improved. And an array ultrasonic transducer is obtained by arranging a plurality of ultrasonic transducer units in an array, thereby improving the applicable range and performance of the array ultrasonic transducer. Meanwhile, the embodiment of the present invention uses the forward growth process to grow the acoustic impedance matching layer, thereby improving the thickness accuracy of the acoustic impedance matching layer and further improving the performance of the array ultrasonic transducer.
对所公开的实施例的上述说明,使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下,在其它实施例中实现。因此,本发明将不会被限制于本文所示的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。The above description of the disclosed embodiments enables any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

  1. 一种阵列式超声换能器,其特征在于,包括呈阵列排列的多个超声换能单元,所述超声换能单元包括:An array type ultrasonic transducer, characterized in that it includes a plurality of ultrasonic transducer units arranged in an array, and the ultrasonic transducer units include:
    背衬层,所述背衬层一侧表面裸露线路层;a backing layer, the circuit layer is exposed on one side of the backing layer;
    位于所述背衬层具有所述线路层一侧的压电层,所述压电层包括压电层本体,和位于所述压电层本体朝向所述背衬层一侧表面及背离所述背衬层一侧表面的电极;A piezoelectric layer located on the side of the backing layer with the circuit layer, the piezoelectric layer includes a piezoelectric layer body, and a surface of the piezoelectric layer body on the side facing the backing layer and away from the electrodes on one side of the backing layer;
    以及,位于所述压电层背离所述背衬层一侧的声学人工结构,所述声学人工结构包括:声阻抗匹配层和声学超构表面;其中,所述声学超构表面位于所述声阻抗匹配层与所述压电层之间,或所述声学超构表面位于所述声阻抗匹配层背离所述背衬层一侧。And, an acoustic artificial structure located on the side of the piezoelectric layer away from the backing layer, the acoustic artificial structure comprising: an acoustic impedance matching layer and an acoustic metasurface; wherein, the acoustic metasurface is located on the acoustic metasurface Between the impedance matching layer and the piezoelectric layer, or the acoustic metasurface is located on the side of the acoustic impedance matching layer away from the backing layer.
  2. 根据权利要求1所述的阵列式超声换能器,其特征在于,所述声阻抗匹配层包括沿所述背衬层至所述压电层方向依次叠加的第一声阻抗匹配子层至第N声阻抗匹配子层,N为大于或等于1的整数。The array ultrasonic transducer according to claim 1, wherein the acoustic impedance matching layer comprises a first acoustic impedance matching sub-layer to a second acoustic impedance matching sub-layer to a second acoustic impedance matching sub-layer to N acoustic impedance matching sublayers, where N is an integer greater than or equal to 1.
  3. 根据权利要求1所述的阵列式超声换能器,其特征在于,所述声学超构表面包括圆形中心部及第一圆环部至第M圆环部,M为大于或等于1的整数;所述第一圆环部环绕所述圆形中心部,第i+1圆环部环绕第i圆环部,所述第一圆环部与所述圆形中心部之间及所述第i+1圆环部与第i圆环部之间均呈环形凹槽状,i为大于或等于1且小于M的整数;The array ultrasonic transducer according to claim 1, wherein the acoustic metasurface comprises a circular central portion and a first annular portion to an M-th annular portion, where M is an integer greater than or equal to 1 ; The first circular ring portion surrounds the circular central portion, the i+1 circular ring portion surrounds the i-th circular portion, and between the first circular ring portion and the circular central portion and the Both the i+1 annular portion and the i-th annular portion are in the shape of an annular groove, and i is an integer greater than or equal to 1 and less than M;
    或者,所述声学超构表面包括并排设置多个条形部,在所述背衬层至所述压电层方向上,至少一个条形部的高度与其余条形部的高度不同,和/或,在所述多个条形部排列方向上,至少一个条形部的宽度与其余条形部的宽度不同,和/或,所述条形部背离所述背衬层一侧呈楔形,和/或,所述条形部为中空条形部,和/或,至少一个条形部的材质与其余条形部的材质不同;Alternatively, the acoustic metasurface comprises arranging a plurality of strips side by side, at least one strip having a height different from the rest of the strips in the direction from the backing layer to the piezoelectric layer, and/ Or, in the arrangement direction of the plurality of strip-shaped parts, the width of at least one strip-shaped part is different from the width of the other strip-shaped parts, and/or the side of the strip-shaped part facing away from the backing layer is wedge-shaped, And/or, the strip part is a hollow strip part, and/or, the material of at least one strip part is different from the material of the other strip parts;
    或者,所述声学超构表面背离所述背衬层一侧为波浪形表面。Alternatively, the side of the acoustic metasurface facing away from the backing layer is a wavy surface.
  4. 根据权利要求1所述的阵列式超声换能器,其特征在于,所述声阻抗匹配层的材质为高分子材质或金属材质。The array ultrasonic transducer according to claim 1, wherein the material of the acoustic impedance matching layer is a polymer material or a metal material.
  5. 根据权利要求1所述的阵列式超声换能器,其特征在于,所述声学超构 表面的材质为聚对二甲苯。The array ultrasonic transducer according to claim 1, wherein the material of the acoustic metasurface is parylene.
  6. 根据权利要求1所述的阵列式超声换能器,其特征在于,所述压电层本体的为压电陶瓷、压电陶瓷复合材质、压点单晶材质或压电单晶复合材质。The array ultrasonic transducer according to claim 1, wherein the piezoelectric layer body is made of piezoelectric ceramic, piezoelectric ceramic composite material, pressure point single crystal material or piezoelectric single crystal composite material.
  7. 根据权利要求1所述的阵列式超声换能器,其特征在于,所述背衬层的材质包括环氧树脂。The array ultrasonic transducer according to claim 1, wherein the material of the backing layer comprises epoxy resin.
  8. 根据权利要求1所述的阵列式超声换能器,其特征在于,所述多个超声换能单元呈矩阵排列。The array ultrasonic transducer according to claim 1, wherein the plurality of ultrasonic transducer units are arranged in a matrix.
  9. 一种阵列式超声换能器的制作方法,其特征在于,所述阵列式超声换能器包括呈阵列排列的多个超声换能单元,所述超声换能单元的制作方法:A manufacturing method of an array ultrasonic transducer, characterized in that the array ultrasonic transducer comprises a plurality of ultrasonic transducer units arranged in an array, and the fabrication method of the ultrasonic transducer unit:
    形成背衬层,所述背衬层一侧表面裸露线路层;forming a backing layer, and the circuit layer is exposed on one side of the backing layer;
    形成位于所述背衬层具有所述线路层一侧的压电层,所述压电层包括压电层本体,和位于所述压电层本体朝向所述背衬层一侧表面及背离所述背衬层一侧表面的电极;A piezoelectric layer is formed on the side of the backing layer with the circuit layer, the piezoelectric layer includes a piezoelectric layer body, and a surface of the piezoelectric layer body on the side facing the backing layer and away from the backing layer is formed. an electrode on one side surface of the backing layer;
    形成位于所述压电层背离所述背衬层一侧的声学人工结构,所述声学人工结构包括:采用正向生长工艺生长的声阻抗匹配层和声学超构表面;其中,所述声学超构表面位于所述声阻抗匹配层与所述压电层之间,或所述声学超构表面位于所述声阻抗匹配层背离所述背衬层一侧。forming an acoustic artificial structure on the side of the piezoelectric layer away from the backing layer, the acoustic artificial structure includes: an acoustic impedance matching layer and an acoustic metasurface grown by a forward growth process; wherein, the acoustic ultrasound The textured surface is located between the acoustic impedance matching layer and the piezoelectric layer, or the acoustic metasurface is located on the side of the acoustic impedance matching layer away from the backing layer.
  10. 根据权利要求9所述的阵列式超声换能器的制作方法,其特征在于,所述采用正向生长工艺生长的声阻抗匹配层,包括:The method for manufacturing an array ultrasonic transducer according to claim 9, wherein the acoustic impedance matching layer grown by a forward growth process comprises:
    采用热蒸发镀膜工艺或磁控溅射工艺生长所述声阻抗匹配层。The acoustic impedance matching layer is grown by a thermal evaporation coating process or a magnetron sputtering process.
PCT/CN2020/130397 2020-11-20 2020-11-20 Array-type ultrasonic transducer and manufacturing method therefor WO2022104683A1 (en)

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