WO2022100469A1 - 一种薄膜体声波谐振器及其制造方法和滤波器 - Google Patents

一种薄膜体声波谐振器及其制造方法和滤波器 Download PDF

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Publication number
WO2022100469A1
WO2022100469A1 PCT/CN2021/127858 CN2021127858W WO2022100469A1 WO 2022100469 A1 WO2022100469 A1 WO 2022100469A1 CN 2021127858 W CN2021127858 W CN 2021127858W WO 2022100469 A1 WO2022100469 A1 WO 2022100469A1
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Prior art keywords
layer
electrode
reinforcement
groove
bulk acoustic
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PCT/CN2021/127858
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English (en)
French (fr)
Inventor
李伟
黄河
罗海龙
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中芯集成电路（宁波）有限公司上海分公司
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Publication of WO2022100469A1 publication Critical patent/WO2022100469A1/zh
Priority to US18/109,915 priority Critical patent/US20230198498A1/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02023—Characteristics of piezoelectric layers, e.g. cutting angles consisting of quartz
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type

Definitions

  • the invention relates to the field of semiconductor device manufacturing, in particular to a thin-film bulk acoustic wave resonator, a manufacturing method thereof, and a filter.
  • the terminal equipment needs to be able to transmit data using different carrier frequency spectrums.
  • RF systems also impose stringent performance requirements.
  • the radio frequency filter is an important part of the radio frequency system, which can filter out the interference and noise outside the communication spectrum to meet the requirements of the radio frequency system and the communication protocol for the signal-to-noise ratio. Taking a mobile phone as an example, since each frequency band needs a corresponding filter, dozens of filters may need to be set in a mobile phone.
  • a thin-film bulk acoustic wave resonator includes two thin-film electrodes, and a piezoelectric thin-film layer is arranged between the two thin-film electrodes.
  • the bulk acoustic wave propagating in the thickness direction of the electric film layer is transmitted to the interface between the upper and lower electrodes and the air and is reflected back, and then reflected back and forth inside the film to form an oscillation.
  • Standing wave oscillations are formed when a sound wave propagates in a piezoelectric film layer that is exactly an odd multiple of a half-wavelength.
  • the cavity-type thin-film bulk acoustic wave resonators currently produced have problems such as shear wave loss, insufficient structural strength, so that the quality factor (Q) cannot be further improved, and the yield is low, so they cannot meet the needs of high-performance RF systems.
  • the invention discloses a thin film bulk acoustic wave resonator and a manufacturing method thereof, which can solve the problems of low quality factor caused by transverse wave leakage of the thin film bulk acoustic wave resonator and easy damage of electrodes at grooves.
  • the present invention provides a thin-film bulk acoustic resonator, comprising:
  • the upper surface of the first substrate is provided with a first cavity
  • the piezoelectric stack structure is arranged on the upper surface of the first substrate and covers the first cavity, and the piezoelectric stack structure includes a second electrode, a piezoelectric layer and a first layer stacked in sequence from bottom to top electrode;
  • a trench including a first trench and/or a second trench
  • the first trench penetrates the first electrode and extends into the piezoelectric layer or penetrates the piezoelectric layer
  • the second trench a trench penetrates the second electrode and extends into or through the piezoelectric layer
  • the reinforcement layer is disposed on at least one side of the first electrode or the second electrode at the bottom position of the groove.
  • the present invention also provides a filter comprising at least one of the above-mentioned thin-film bulk acoustic resonators.
  • the present invention also provides a method for manufacturing the thin-film bulk acoustic wave resonator, comprising:
  • the thin film bulk acoustic wave resonator includes a second groove and a second reinforcement layer, and forming the second groove and the second reinforcement layer includes: forming a second reinforcement on the carrier substrate before forming the first electrode layer; forming a second trench extending through the second electrode over the region of the second reinforcement layer after forming the second electrode and extending into the piezoelectric layer or through the piezoelectric layer; and /or,
  • the thin-film bulk acoustic wave resonator includes a first groove and a first reinforcement layer, and forming the first groove and the first reinforcement layer includes: after forming the second electrode, forming a first groove on the second electrode a reinforcement layer; after removing the carrier substrate, a first trench is formed over the region of the first reinforcement layer through the first electrode and extending into the piezoelectric layer or through the piezoelectric layer .
  • a groove is arranged in the piezoelectric laminated structure, and the first electrode or the second electrode and the end face of the piezoelectric layer exposed in the groove form an acoustic impedance mismatch area with the gas in the groove, which can effectively prevent the transverse direction of the acoustic wave. Leakage improves the quality factor of the resonator, and a reinforcement layer is arranged at the bottom of the groove, which can strengthen the electrode in the groove area and prevent the film-shaped electrode from being damaged.
  • the reinforcement layer located outside the groove and at the boundary of the effective resonance area can not only improve the structural strength of the electrode, but also form a mismatched area of acoustic impedance in this area, so as to prevent the lateral leakage of acoustic waves and improve the quality factor of the resonator. effect.
  • the projection of the groove on the surface of the first substrate is an annular shape, and the inside of the annular shape is the effective resonance area of the resonator. This arrangement can greatly increase the acoustic impedance mismatch area and further improve the resonator. Quality factor.
  • the groove includes a first groove and a second groove, and along the inner boundary of the groove, the surfaces of the first electrode and the second electrode are provided with protrusions, and the protrusions are arranged opposite the reinforcement layer in the horizontal direction to form a complete Or close to a complete ring, to increase the impedance mismatch area (the boundaries of the effective resonant area all form an impedance mismatch area); there is a relative area between the bulge and the reinforcement layer in the vertical direction, which can further increase the degree of impedance mismatch , such an arrangement can prevent the lateral leakage of sound waves to a large extent, and improve the quality factor of the resonator.
  • FIG. 1 shows a schematic structural diagram of a thin film bulk acoustic wave resonator according to Embodiment 1 of the present invention.
  • FIG. 2 shows a schematic structural diagram of a thin film bulk acoustic wave resonator according to Embodiment 2 of the present invention.
  • 3 to 9 show schematic structural diagrams corresponding to different steps of a method for manufacturing a thin film bulk acoustic resonator according to Embodiment 3.
  • FIG. 10 to FIG. 16 are schematic structural diagrams corresponding to different steps of a method for manufacturing a thin-film bulk acoustic resonator according to Embodiment 4.
  • FIG. 10 to FIG. 16 are schematic structural diagrams corresponding to different steps of a method for manufacturing a thin-film bulk acoustic resonator according to Embodiment 4.
  • FIG. 10 to FIG. 16 are schematic structural diagrams corresponding to different steps of a method for manufacturing a thin-film bulk acoustic resonator according to Embodiment 4.
  • FIG. 10 to FIG. 16 are schematic structural diagrams corresponding to different steps of a method for manufacturing a thin-film bulk acoustic resonator according to Embodiment 4.
  • FIG. 10 to FIG. 16 are schematic structural diagrams corresponding to different steps of a method for manufacturing a thin-film bulk acoustic resonator according to Embodiment 4.
  • FIG. 10 to FIG. 16 are schematic structural diagrams corresponding to different steps of
  • 100-bearing substrate 101-second dielectric layer; 102-second reinforcement layer; 200-first cavity; 201-first electrode; 202-piezoelectric layer; 203-second electrode; 204-first reinforcement 205-support layer; 206-sacrificial layer; 207-dielectric layer; 208-substrate; 110b-second cavity; 40-second trench; 41-first trench; 1021-first bump; 2041 - second protrusion; 300 - base.
  • Spatial relational terms such as “under”, “below”, “below”, “under”, “above”, “above”, etc., in It may be used herein for convenience of description to describe the relationship of one element or feature to other elements or features shown in the figures. It should be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation shown in the figures. For example, if the device in the figures is turned over, then elements or features described as “below” or “beneath” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the exemplary terms “below” and “under” can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
  • a method herein includes a series of steps, the order of the steps presented herein is not necessarily the only order in which the steps may be performed, and some of the steps may be omitted and/or some other steps not described herein may be added to this method. If the components in a certain drawing are the same as the components in other drawings, although these components can be easily identified in all the drawings, in order to make the description of the drawings clearer, this specification will not refer to all the same components. Numbers are attached to each figure.
  • FIG. 1 shows a schematic structural diagram of a thin-film piezoelectric acoustic resonator according to Embodiment 1. Please refer to FIG. 1.
  • the thin-film bulk acoustic resonator includes:
  • first substrate the upper surface of the first substrate is provided with a first cavity 200;
  • the piezoelectric stack structure is disposed on the upper surface of the first substrate and covers the first cavity 200 , and the piezoelectric stack structure includes a second electrode 203 and a piezoelectric layer 202 stacked in sequence from bottom to top and the first electrode 201;
  • the first trench 41 penetrates the first electrode 201 and extends into the piezoelectric layer 202 or penetrates the piezoelectric layer 202
  • the second trench 40 penetrates the second electrode 203 and extends into the piezoelectric layer 202 or penetrates the piezoelectric layer 202;
  • the reinforcement layer is disposed on at least one side of the first electrode 201 or the second electrode 202 at the bottom of the trench.
  • the first substrate includes a base 300 and a support layer 205 disposed on the base 300 , the support layer 205 is bonded on the base 300 , and the support layer 205 surrounds the first cavity 200 .
  • the first cavity 200 exposes the upper surface of the substrate 300 .
  • the first cavity 200 is an annular closed cavity, and the first cavity 200 can be formed by etching the support layer 205 through an etching process.
  • the technology of the present invention is not limited only to this.
  • the first substrate is a single-layer structure, and the first cavity is disposed in the first substrate.
  • the support layer 205 is combined with the substrate 300 by a bonding method, and the bonding method includes covalent bonding, adhesive bonding or fusion bonding.
  • the support layer 205 and the substrate 300 are bonded through a bonding layer, and the material of the bonding layer includes silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride or ethyl silicate.
  • the material of the substrate 300 may be at least one of the following materials: silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbon (SiC), silicon germanium carbon (SiGeC) ), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP) or other III/V compound semiconductors, as well as multilayer structures composed of these semiconductors, etc., and can also be ceramic substrates such as alumina , quartz or glass substrates, etc.
  • the material of the support layer 205 can be any suitable dielectric material, including but not limited to one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride and other materials.
  • the shape of the bottom surface of the first cavity 200 is a rectangle, but in other embodiments of the present invention, the shape of the bottom surface of the first cavity 200 may also be a circle, an ellipse, or a polygon other than a rectangle. For example, pentagons, hexagons, etc.
  • a piezoelectric laminated structure is disposed above the first cavity 200 , and the piezoelectric laminated structure includes a second electrode 203 , a piezoelectric layer 202 and a first electrode 201 in sequence from bottom to top.
  • the second electrode 203 is located on the support layer 205
  • the piezoelectric layer 202 is located on the second electrode 203
  • the first electrode 201 is located on the piezoelectric layer 202 .
  • the material of the second electrode 203 and the first electrode 201 can be any suitable conductive material or semiconductor material known to those skilled in the art, wherein the conductive material can be a metal material with conductive properties, such as molybdenum (Mo), aluminum (Al), Copper (Cu), Tungsten (W), Tantalum (Ta), Platinum (Pt), Ruthenium (Ru), Rhodium (Rh), Iridium (Ir), Chromium (Cr), Titanium (Ti), Gold (Au), osmium (Os), rhenium (Re), palladium (Pd) and other metals, or a laminate of the above metals, and semiconductor materials such as Si, Ge, SiGe, SiC, SiGeC, etc. .
  • the second electrode 203 and the first electrode 201 may be formed by physical vapor deposition such as magnetron sputtering, evaporation, or chemical vapor deposition.
  • the piezoelectric layer 202 can be made of aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate, quartz, potassium niobate or lithium tantalate, etc., which have a wurtzite crystal structure. Piezoelectric materials and their combinations.
  • the piezoelectric layer 202 may further include a rare earth metal such as at least one of scandium (Sc), erbium (Er), yttrium (Y), and lanthanum (La).
  • the piezoelectric layer 202 may further include a transition metal such as at least one of zirconium (Zr), titanium (Ti), manganese (Mn), and hafnium (Hf). kind.
  • the piezoelectric layer 202 may be deposited using any suitable method known to those skilled in the art, such as chemical vapor deposition, physical vapor deposition, or atomic layer deposition.
  • the trenches in this embodiment include a first trench 41 and a second trench 40 , the first trench 41 penetrates the first electrode 201 and the piezoelectric layer 202 , and the second trench 40 penetrates the The second electrode 203 penetrates the piezoelectric layer 202 .
  • the inner sidewall of the trench constitutes at least part of the boundary of the effective resonance area, and the first electrode 201 , the piezoelectric layer 202 and the second electrode 203 in the effective resonance area are perpendicular to each other.
  • the piezoelectric layers 202 are stacked on each other in the surface direction.
  • the first reinforcement layer 204 is provided on the second electrode 203 at the bottom of the first trench 41
  • the second reinforcement layer 102 is provided on the first electrode 201 at the bottom of the second trench 40 .
  • the first reinforcement layer 204 is disposed on the surface of the second electrode close to the first cavity 200
  • the second reinforcement layer 102 is disposed on the surface of the first electrode 201 away from the first cavity 200 .
  • the first reinforcement layer may also be provided on the surface of the second electrode away from the first cavity, and the first reinforcement layer may also be provided on the upper and lower surfaces of the first electrode.
  • the second reinforcement layer may be provided with on either surface of the first electrode or on both surfaces of the first electrode.
  • the first groove 41 and/or the second groove 40 make the end face of the electrode and the end face of the piezoelectric layer in contact with the air, so that the acoustic impedance of the area where the groove is located is mismatched, and the effect of preventing the leakage of the shear wave in the effective area can be improved.
  • the reinforcement layer can reinforce the electrode in the groove area and prevent the film-like electrode from being damaged.
  • the material of the reinforcement layer includes a conductive material or a dielectric material.
  • the material of the reinforcement layer is a conductive material
  • the material of the first reinforcement layer is the same as the material of the second electrode
  • the material of the second reinforcement layer is the same as that of the first electrode.
  • materials are the same.
  • Dielectric materials include silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, and the like.
  • the area enclosed by the inner sidewalls of the first trench 41 and the second trench 40 is an effective resonance area
  • the projection of the inner sidewalls of the two in the direction of the surface of the piezoelectric layer is a closed figure
  • the figure is an irregular polygon
  • the first electrode 210, the piezoelectric layer 202, and the second electrode 203 in the effective resonance area are superimposed on each other in the direction perpendicular to the surface of the piezoelectric layer.
  • the first trench 41 and the second trench 40 are both continuous structures and are disposed opposite to each other, and the projections of the two ends of the two are in contact with each other.
  • the first groove and/or the second groove may be discontinuous structures, and their projections are complementary to form a closed pattern.
  • the trench includes the first trench 41 and the second trench 40, and the inner sidewalls of the two only constitute a part of the boundary of the effective resonance area.
  • the first trench and/or the second trench extend to a partial depth in the piezoelectric layer without penetrating the piezoelectric layer.
  • the trenches may include only the first trench or the second trench.
  • the first reinforcement layer is provided at the bottom of the first trench and at the corresponding position of the second electrode 203 .
  • the groove includes the second groove, a second reinforcement layer is provided at the bottom of the second groove and at the corresponding position of the first electrode 201 .
  • the projection of the bottom of the first groove 41 on the surface direction of the piezoelectric layer 202 is within the range of the projection of the first reinforcement layer 204 on the surface direction of the piezoelectric layer 202 .
  • the projection of the bottom of the groove 40 in the direction of the surface of the piezoelectric layer 202 is within the projection range of the second reinforcement layer 102 in the direction of the surface of the piezoelectric layer 202, that is, the reinforcement layer completely covers the bottom area of the groove,
  • the reinforcement layer located outside the groove and at the boundary of the effective resonance area can not only improve the structural strength of the electrode, but also form a mismatched area of acoustic impedance in this area to prevent lateral leakage of acoustic waves and improve the quality factor of the resonator.
  • Embodiment 1 The difference between this embodiment and Embodiment 1 is that a protrusion is provided at the boundary of the effective resonance area, and the protrusion is disposed opposite to the reinforcement layer, and other structures are the same as those of Embodiment 1.
  • the protrusions include a first protrusion and a second protrusion.
  • a second protrusion 2041 is provided on the horizontally opposite side of the first reinforcement layer 204 and the area where the inner sidewall of the second groove 40 is located, and on the horizontally opposite side of the second reinforcement layer 102 and the area where the inner sidewall of the first groove 41 is located.
  • a first protrusion 1021 is provided.
  • the first protrusions 1021 and the second reinforcement layer are made of the same material and have the same thickness, and both are formed in a synchronous process; the second protrusions 2041 and the first reinforcement layer 204 are made of the same material, And the thickness of the two is also the same, and the two are formed in a synchronous process.
  • the materials and heights of the protrusions and reinforcement layers may also be different. Disposing the bulge at the boundary of the effective resonant area can make the area where the bulge is located and the effective resonant area to achieve impedance mismatch, prevent the leakage of transverse waves in the effective resonant area, and improve the Q value of the resonator.
  • the projections of the first protrusions 1021 and the second reinforcement layer 102 in the direction of the surface of the piezoelectric layer constitute a closed pattern and/or the projections of the second protrusions 2041 and the first reinforcement layer 204 in the direction of the surface of the piezoelectric layer The projections form a closed figure.
  • the first protrusions 1021 are arranged opposite to the second reinforcement layer 102 in the horizontal direction to form a complete or nearly complete ring, and the second protrusions 2041 are arranged opposite to the first reinforcement layer 204 in the horizontal direction.
  • This arrangement increases the Impedance mismatch area (the boundaries of the effective resonance area all form impedance mismatch areas); in the vertical direction, the first protrusion 1021 and the first reinforcement layer 204 have an opposite area, and the second protrusion 2041 and the second protrusion in the vertical direction
  • the reinforcement layer 102 has a relative area, which can further increase the degree of impedance mismatch. The above arrangement can prevent the lateral leakage of sound waves to a large extent, and improve the quality factor of the resonator. .
  • An embodiment of the present invention provides a filter, including at least one thin film bulk acoustic resonator in Embodiment 1 and/or Embodiment 2.
  • Embodiment 3 provides a method for manufacturing a thin film bulk acoustic resonator, comprising the following steps:
  • the thin-film bulk acoustic resonator includes a second groove and a second reinforcement layer, and forming the second groove and the second reinforcement layer includes: forming a first electrode on the carrier substrate before forming the first electrode Two reinforcement layers; after the second electrode is formed, a second groove is formed over the region of the second reinforcement layer and extending through the second electrode and extending into the piezoelectric layer or through the piezoelectric layer and/or, the thin film bulk acoustic resonator includes a first groove and a first reinforcement layer, and forming the first groove and the first reinforcement layer includes: after forming the second electrode, in the second A first reinforcement layer is formed on the electrode; after removing the carrier substrate, the first electrode is formed over the region of the first reinforcement layer and extends into the piezoelectric layer or through the piezoelectric layer the first groove.
  • Step S0N does not represent a sequential order.
  • FIGS. 3 to 9 are schematic structural diagrams corresponding to different steps of a method for manufacturing a thin-film piezoelectric acoustic resonator according to Embodiment 3 of the present invention. Please refer to FIGS. 3 to 9 for detailed description of each step.
  • step S01 is performed: a carrier substrate 100 is provided.
  • the carrier substrate 100 may be at least one of the following mentioned materials: silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbon (SiC), silicon germanium carbon (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP), or other III/V compound semiconductors, and may also be ceramic substrates such as alumina, quartz or glass substrates, and the like.
  • the thin film bulk acoustic resonator includes both the first groove and the first reinforcement layer and the second groove and the second reinforcement layer.
  • the inner sidewalls of the first trench and/or the second trench constitute at least part of the boundary of the effective resonance area, and the first electrode, the piezoelectric layer and the second electrode in the effective resonance area are perpendicular to The piezoelectric layers are superimposed on each other in the surface direction.
  • step S05 is performed to form the second reinforcement layer. Specifically, referring to FIG.
  • a second reinforcement material layer is formed on the carrier substrate 100 , the first reinforcement material layer is patterned to form the second reinforcement layer 102 , on the carrier substrate 100 , The outer periphery of the second reinforcement layer forms a second dielectric layer 101 , so that the surface of the second dielectric layer 101 is flush with the surface of the second reinforcement layer 102 .
  • the material of the second reinforcement layer Referring to Example 1, the second reinforcement material layer can be formed by a deposition method. The second dielectric layer needs to be removed in a later process, and the second dielectric layer is selected from a material that is easy to remove, such as low temperature silicon dioxide, polyimide, amorphous carbon or germanium. Refer to Example 1 for the structural form and function of the first groove and the first reinforcement layer.
  • the thin-film BAW resonator further includes a first protrusion 1021 disposed opposite to the second reinforcement layer 102 in the horizontal direction.
  • the positional relationship between the first protrusions 1021 and the second reinforcement layer 102 refers to the second embodiment.
  • the first protrusions 1021 and the second reinforcement layer 102 are formed simultaneously, and forming the first protrusions 1021 includes: forming a reinforcement material layer, patterning the reinforcement material layer to form the second reinforcement layer 102 and For the first protrusion 1021, the material and height of the first protrusion and the reinforcement layer are the same.
  • first protrusions and the second reinforcement layer may also be formed separately, and in this case, the materials or heights of the first protrusions and the reinforcement layer may be the same or different.
  • the structure, positional relationship and function of the protrusions and the reinforcement layer refer to the relevant descriptions of Embodiment 1 and Embodiment 2.
  • step S02 is performed, and a first electrode 201 , a piezoelectric layer 202 and a second electrode 203 are sequentially formed on the second dielectric layer, the second reinforcement layer and the first protrusion 1021 .
  • the materials and forming methods of the three are as follows: Embodiment 1 is not repeated here.
  • the thin-film BAW resonator further includes a second protrusion 2041 that is opposite to the first reinforcement layer 204 in the horizontal direction.
  • the second protrusions 2041 and the first reinforcement layer 204 refer to Embodiment 2.
  • the second protrusions 2041 are formed simultaneously with the first reinforcement layer 204 , and forming the second protrusions 2041 includes: forming a reinforcement material layer, patterning the reinforcement material layer to form the first reinforcement layer 204 and The second protrusion 2041, the material and height of the second protrusion and the first reinforcement layer are all the same.
  • the second protrusions and the first reinforcement layer may also be formed separately, and in this case, the materials or heights of the second protrusions and the first reinforcement layer may be the same or different.
  • a first substrate with a first cavity 200 is formed on the second electrode 203 .
  • a support layer 205 is formed by physical vapor deposition or chemical vapor deposition, covering the second electrode 203 , the first reinforcement layer 204 and the second protrusions 2041 .
  • the material of the support layer 205 can be any suitable dielectric material, including but not limited to at least one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride and other materials.
  • the support layer 205 is patterned to form the first cavity 200 . In this embodiment, the first cavity 200 penetrates through the support layer 205 .
  • the first cavity 204 exposes the first reinforcement layer 204 and the second protrusion 2041 , and the structure of the first cavity 200 refers to Embodiment 1.
  • a second trench 40 is formed over the region of the second reinforcement layer 102 penetrating the second electrode 203 and the piezoelectric layer 202, and the The projection of the bottom of the second groove 40 in the direction of the surface of the piezoelectric layer 202 is within the range of the projection of the second reinforcement layer 102 in the direction of the surface of the piezoelectric layer 202 .
  • the second trench may be formed before the supporting layer 205 is formed, or may be formed after the first cavity 200 is formed.
  • the second groove 40 is formed on the side of the second protrusion 2041 away from the effective resonance region.
  • the second protrusions 2041 and the second reinforcement layer 102 are provided with overlapping regions in a direction perpendicular to the surface of the piezoelectric layer, and the overlapping regions have a stronger impedance mismatch effect.
  • a substrate 300 is provided, and the substrate 300 is bonded on the support layer 205 to cover the first cavity 200 , and the first substrate includes the support layer 205 and the substrate 300 .
  • the material of the substrate 300 and the bonding method between the substrate 300 and the support layer 205 can be referred to in Embodiment 1, and will not be repeated here.
  • step S04 is performed: removing the carrier substrate 100 .
  • the carrier substrate 100 may be removed by grinding, wet etching or etching. This embodiment also includes removing the second dielectric layer 101 .
  • FIGS. 10 to 16 are schematic structural diagrams corresponding to different steps of a method for manufacturing a thin-film piezoelectric acoustic resonator according to Embodiment 4 of the present invention. Please refer to FIGS. 10 to 16 for detailed description of each step.
  • a carrier substrate 100 is provided.
  • the material of the carrier substrate 100 refers to Embodiment 3.
  • a second reinforcement layer 102 and a second dielectric layer 101 on the periphery of the second reinforcement layer are formed on the carrier substrate 100.
  • the second dielectric layer The materials and forming methods of 101 and the second reinforcement layer 102 refer to Embodiment 3.
  • a first electrode 201 , a piezoelectric layer 202 and a second electrode 203 are sequentially formed on the second dielectric layer 101 and the second reinforcement layer 102 . .
  • a first reinforcement layer 204 is formed on the surface of the second electrode 203 .
  • the material and formation method of the first reinforcement layer refer to Embodiment 3, which will not be repeated here.
  • a second trench 40 is formed above the first reinforcement layer 102 , the second trench 40 penetrates the second electrode 203 and the piezoelectric layer 202 , the second trench 40 may also only penetrate a part of the thickness of the piezoelectric layer 202 , and the second trench 40 penetrates the thickness of the piezoelectric layer 202 .
  • the structure of the groove 40 refers to the first embodiment.
  • a first substrate with a first cavity is formed on the second electrode 203 .
  • a sacrificial layer 206 is formed on the second electrode 203; a first substrate is formed to cover the sacrificial layer 206 and the periphery of the sacrificial layer 206; the sacrificial layer 206 is removed to form the first void Cavity 200.
  • a sacrificial material layer is formed on the surface of the second electrode 203, the sacrificial material layer is patterned to form a sacrificial layer 206, and the sacrificial layer 206 covers the area surrounded by the first reinforcement layer 204 and the second reinforcement layer 102, And fill the second trench, the material of the sacrificial material layer includes phosphosilicate glass, low temperature silicon dioxide, borophosphosilicate glass, germanium, carbon, polyimide or photoresist, depending on the material, it can be deposited or rotated The coating process forms the sacrificial material layer.
  • a dielectric layer 207 is formed to cover the second sacrificial layer 206 and the periphery of the second sacrificial layer.
  • the dielectric layer 207 wraps the second sacrificial layer 206.
  • the material of the dielectric layer 207 includes silicon oxide, silicon nitride, nitrogen
  • the dielectric layer 207 can be formed by a deposition method.
  • the dielectric layer can serve as the first substrate.
  • the substrate 208 is also formed on the upper surface of the dielectric layer 207. The substrate 208 can be bonded on the upper surface of the dielectric layer 207 through a bonding process.
  • the purpose of bonding the substrate 208 is to shorten the deposition time of the dielectric layer, because A certain thickness is required above the surface of the sacrificial layer 206 to improve the structural strength of the first substrate. It is slow to form the dielectric layer 207 with a certain thickness by deposition, and the process time is shortened by bonding the substrate 208 .
  • the carrier substrate 100 is removed.
  • the carrier substrate 100 may be removed by grinding, wet etching or etching.
  • This embodiment also includes removing the second dielectric layer 101 .
  • a first trench 41 is formed above the first reinforcement layer 204, the first trench 41 penetrates the first electrode 201 and the piezoelectric layer 202, and the first trench 41 may only penetrate a part of the piezoelectric layer
  • the thickness of the layer 202 and the structure of the first trench 41 refer to Embodiment 1.
  • the sacrificial layer is removed to form a first cavity 200 , and a first electrode 201 , a piezoelectric layer 202 and a second electrode can be formed above the first cavity and outside the first reinforcement layer and the second reinforcement layer.
  • the release hole of 203, the sacrificial layer is removed through the release hole.
  • the corresponding removal method is adopted.
  • the sacrificial layer material is polyimide or photoresist
  • the ashing method is specifically at a temperature of 250 degrees Celsius.
  • the oxygen in the released pores reacts chemically with the sacrificial layer material, and the generated gaseous substances are volatilized.
  • the sacrificial layer material is low-temperature silicon dioxide, hydrofluoric acid solvent and low-temperature silicon dioxide are used to react and remove.
  • both the first groove and the first reinforcement layer and the second groove and the second reinforcement layer are formed. According to the method of this embodiment, only one of the grooves and the corresponding reinforcement layer can be formed. In this embodiment, the first protrusions and the second protrusions are not formed. It should be understood that the first protrusions and the second protrusions can also be formed by using the method of this embodiment, and the formation positions and methods can be referred to in Embodiment 3. .
  • each embodiment in this specification is described in a related manner, and the same and similar parts between the various embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. .
  • the description is relatively simple, especially for the embodiment 4, the related parts of the same structure material, positional relationship and forming method refer to the description of the embodiment 3 That's it.

Abstract

本发明提供一种薄膜体声波谐振器及其制造方法和滤波器，其中，薄膜体声波谐振器包括：第一衬底，第一衬底的上表面设有第一空腔；压电叠层结构，设置于第一衬底的上表面，覆盖第一空腔，压电叠层结构从下至上包括依次层叠的第二电极、压电层和第一电极；沟槽，包括第一沟槽和/或第二沟槽，第一沟槽贯穿第一电极，并延伸至压电层中或贯穿压电层，第二沟槽贯穿第二电极并延伸至压电层中或贯穿压电层；加固层，设置于沟槽的底部位置的第一电极或第二电极的至少一侧。本发明在沟槽的底部设置加固层，加固层能够加固沟槽区域的电极，防止薄膜状的电极破损。

Description

一种薄膜体声波谐振器及其制造方法和滤波器 技术领域
本发明涉及半导体器件制造领域，尤其涉及一种薄膜体声波谐振器及其制造方法和滤波器。
 背景技术
随着无线通讯技术的不断发展，为了满足各种无线通讯终端的多功能化需求，终端设备需要能够利用不同的载波频谱传输数据，同时，为了在有限的带宽内支持足够的数据传输率，对于射频系统也提出了严格的性能要求。射频滤波器是射频系统的重要组成部分，可以将通信频谱外的干扰和噪声滤出以满足射频系统和通信协议对于信噪比的需求。以手机为例，由于每一个频带需要有对应的滤波器，一台手机中可能需要设置数十个滤波器。
通常，薄膜体声波谐振器包括两个薄膜电极，并且两个薄膜电极之间设有压电薄膜层，其工作原理为利用压电薄膜层在交变电场下产生振动，该振动激励出沿压电薄膜层厚度方向传播的体声波，此声波传至上下电极与空气交界面被反射回来，进而在薄膜内部来回反射，形成震荡。当声波在压电薄膜层中传播正好是半波长的奇数倍时，形成驻波震荡。
 技术问题
但是，目前制作出的空腔型薄膜体声波谐振器，存在横波损失，结构强度不够，使品质因子（Q）无法进一步提高、成品率低等问题，因此无法满足高性能的射频系统的需求。
 技术解决方案
本发明揭示了一种薄膜体声波谐振器及其制造方法，能够解决薄膜体声波谐振器横波泄露造成品质因数不高，沟槽处的电极容易破损的问题。
为解决上述技术问题，本发明提供了一种薄膜体声波谐振器，包括：
第一衬底，所述第一衬底的上表面设有第一空腔；
压电叠层结构，设置于所述第一衬底的上表面，覆盖所述第一空腔，所述压电叠层结构从下至上包括依次层叠的第二电极、压电层和第一电极；
沟槽，包括第一沟槽和/或第二沟槽，所述第一沟槽贯穿所述第一电极，并延伸至所述压电层中或贯穿所述压电层，所述第二沟槽贯穿所述第二电极并延伸至所述压电层中或贯穿所述压电层；
加固层，设置于所述沟槽的底部位置的所述第一电极或所述第二电极的至少一侧。
本发明还提供了一种滤波器，包括至少一个上述的薄膜体声波谐振器。
本发明还提供了一种薄膜体声波谐振器的制造方法，包括：
提供承载衬底，
在所述承载衬底上依次形成第一电极、压电层和第二电极；
在所述第二电极上形成带有第一空腔的第一衬底；
去除所述承载衬底；
所述薄膜体声波谐振器包括第二沟槽和第二加固层，形成所述第二沟槽和第二加固层包括：形成所述第一电极前在所述承载衬底上形成第二加固层；形成所述第二电极后在所述第二加固层的区域上方形成贯穿所述第二电极，并延伸至所述压电层中或贯穿所述压电层的第二沟槽；和/或，
所述薄膜体声波谐振器包括第一沟槽和第一加固层，形成所述第一沟槽和第一加固层包括：形成所述第二电极后，在所述第二电极上形成第一加固层；去除所述承载衬底后，在所述第一加固层的区域上方形成贯穿所述第一电极，并延伸至所述压电层中或贯穿所述压电层的第一沟槽。
 有益效果
本发明的有益效果在于：
在压电叠层结构中设置沟槽，暴露在沟槽中的第一电极或第二电极及压电层的端面，与沟槽中的气体形成声阻抗失配区，能够有效防止声波的横向泄露，提高了谐振器的品质因数，在沟槽的底部设置加固层，加固层能够加固沟槽区域的电极，防止薄膜状的电极破损。
进一步地，位于沟槽外部的、有效谐振区边界处的加固层不但能够提高电极的结构强度还在此区域形成了声阻抗的不匹配区，达到防止声波的横向泄露，提高谐振器品质因数的作用。
进一步地，沟槽在第一衬底表面方向上的投影为环形，环形的内部为谐振器的有效谐振区，这种设置方式能够较大程度地增加声阻抗失配区域，进一步提高谐振器的品质因数。
进一步地，沟槽包括第一沟槽和第二沟槽，沿沟槽的内边界、第一电极和第二电极的表面设置凸起，在水平方向上凸起与加固层相对设置，形成完整或接近完整的环形，以增大阻抗失配的区域（有效谐振区的边界均形成阻抗失配区）；在垂直方向上凸起与加固层存在相对区域，能够进一步增大阻抗失配的程度，这样的设置方式能够较大程度地防止声波的横向泄露，提高了谐振器的品质因数。
 附图说明
通过结合附图对本发明示例性实施例进行更详细的描述，本发明的上述以及其它目的、特征和优势将变得更加明显，在本发明示例性实施例中，相同的参考标号通常代表相同部件。
图1示出了本发明实施例1的一种薄膜体声波谐振器的结构示意图。
图2示出了本发明实施例2的一种薄膜体声波谐振器的结构示意图。
图3至图9示出了实施例3的一种薄膜体声波谐振器的制造方法的不同步骤对应的结构示意图。
图10至图16示出了实施例4的一种薄膜体声波谐振器的制造方法的不同步骤对应的结构示意图。
附图标记说明：
100-承载衬底；101-第二介质层；102-第二加固层；200-第一空腔；201-第一电极；202-压电层；203-第二电极；204-第一加固层；205-支撑层；206-牺牲层；207-介质层；208-基板；110b-第二空腔；40-第二沟槽；41-第一沟槽；1021-第一凸起；2041-第二凸起；300-基底。
 本发明的实施方式
以下结合附图和具体实施例对本发明作进一步详细说明。根据下面的说明和附图，本发明的优点和特征将更清楚，然而，需说明的是，本发明技术方案的构思可按照多种不同的形式实施，并不局限于在此阐述的特定实施例。附图均采用非常简化的形式且均使用非精准的比例，仅用以方便、明晰地辅助说明本发明实施例的目的。
应当明白，当元件或层被称为“在...上”、“与...相邻”、“连接到”或“耦合到”其它元件或层时，其可以直接地在其它元件或层上、与之相邻、连接或耦合到其它元件或层，或者可以存在居间的元件或层。相反，当元件被称为“直接在...上”、“与...直接相邻”、“直接连接到”或“直接耦合到”其它元件或层时，则不存在居间的元件或层。应当明白，尽管可使用术语第一、第二、第三等描述各种元件、部件、区、层和/或部分，这些元件、部件、区、层和/或部分不应当被这些术语限制。这些术语仅仅用来区分一个元件、部件、区、层或部分与另一个元件、部件、区、层或部分。因此，在不脱离本发明教导之下，下面讨论的第一元件、部件、区、层或部分可表示为第二元件、部件、区、层或部分。
空间关系术语例如“在...下”、“在...下面”、“下面的”、“在...之下”、“在...之上”、“上面的”等，在这里可为了方便描述而被使用从而描述图中所示的一个元件或特征与其它元件或特征的关系。应当明白，除了图中所示的取向以外，空间关系术语意图还包括使用和操作中的器件的不同取向。例如，如果附图中的器件翻转，然后，描述为“在其它元件下面”或“在其之下”或“在其下”元件或特征将取向为在其它元件或特征“上”。因此，示例性术语“在...下面”和“在...下”可包括上和下两个取向。器件可以另外地取向(旋转90度或其它取向)并且在此使用的空间描述语相应地被解释。
在此使用的术语的目的仅在于描述具体实施例并且不作为本发明的限制。在此使用时，单数形式的“一”、“一个”和“所述/该”也意图包括复数形式，除非上下文清楚指出另外的方式。还应明白术语“组成”和/或“包括”，当在该说明书中使用时，确定所述特征、整数、步骤、操作、元件和/或部件的存在，但不排除一个或更多其它的特征、整数、步骤、操作、元件、部件和/或组的存在或添加。在此使用时，术语“和/或”包括相关所列项目的任何及所有组合。
如果本文的方法包括一系列步骤，且本文所呈现的这些步骤的顺序并非必须是可执行这些步骤的唯一顺序，且一些的步骤可被省略和/或一些本文未描述的其他步骤可被添加到该方法。若某附图中的构件与其他附图中的构件相同，虽然在所有附图中都可轻易辨认出这些构件，但为了使附图的说明更为清楚，本说明书不会将所有相同构件的标号标于每一图中。
实施例 1
本实施例提供了一种薄膜体声波谐振器，图1示出了实施例1的一种薄膜压电声波谐振器的结构示意图，请参考图1，所述薄膜体声波谐振器包括：
第一衬底，所述第一衬底的上表面设有第一空腔200；
压电叠层结构，设置于所述第一衬底的上表面，覆盖所述第一空腔200，所述压电叠层结构从下至上包括依次层叠的第二电极203、压电层202和第一电极201；
沟槽，包括第一沟槽41和/或第二沟槽40，所述第一沟槽41贯穿所述第一电极201，并延伸至所述压电层202中或贯穿所述压电层202，所述第二沟槽40贯穿所述第二电极203并延伸至所述压电层202中或贯穿所述压电层202；
加固层，设置于所述沟槽的底部位置的所述第一电极201或所述第二电极202的至少一侧。
具体地，本实施例中，第一衬底包括基底300和设置于基底300上的支撑层205，支撑层205键合于基底300上，且支撑层205围成第一空腔200，所述第一空腔200暴露出所述基底300的上表面。本实施例中，第一空腔200为环形的封闭空腔，第一空腔200可以通过刻蚀工艺刻蚀支撑层205形成。但本发明的技术不仅仅限定于此。如在另一个实施例中，第一衬底为单层结构，第一空腔设置于第一衬底中。本实施例中，支撑层205是通过键合的方式与基底300结合，键合的方式包括：共价键键合、粘结键合或熔融键合。本实施例中，支撑层205和基底300通过键合层实现键合，键合层的材料包括氧化硅、氮化硅、氮氧化硅、碳氮化硅或硅酸乙酯。
本实施例中，基底300的材料可以为以下所提到的材料中的至少一种：硅(Si)、锗(Ge)、锗硅(SiGe)、碳硅(SiC)、碳锗硅(SiGeC)、砷化铟(InAs)、砷化镓(GaAs)、磷化铟(InP)或者其它III/V化合物半导体，还包括这些半导体构成的多层结构等，也可为氧化铝等的陶瓷基底、石英或玻璃基底等。支撑层205的材料可以是任意适合的介电材料，包括但不限于氧化硅、氮化硅、氮氧化硅、碳氮化硅等材料中的一种。
本实施例中，第一空腔200的底面的形状为矩形，但在本发明的其他实施例中，第一空腔200底面的形状还可以是圆形、椭圆形或是矩形以外的多边形，例如五边形、六边形等。第一空腔200的上方设有压电叠层结构，压电叠层结构从下至上依次包括第二电极203、压电层202和第一电极201。第二电极203位于支撑层205上，压电层202位于第二电极203上，第一电极201位于压电层202上。第二电极203和第一电极201的材料可以使用本领域技术人员熟知的任意合适的导电材料或半导体材料，其中，导电材料可以为具有导电性能的金属材料，例如，由钼（Mo）、铝（Al）、铜（Cu）、钨（W）、钽（Ta）、铂（Pt）、钌（Ru）、铑（Rh）、铱（Ir）、铬（Cr）、钛（Ti）、金(Au)、锇(Os)、铼(Re)、钯(Pd)等金属中一种制成或由上述金属形成的叠层制成，半导体材料例如是Si、Ge、SiGe、SiC、SiGeC等。可以通过磁控溅射、蒸镀等物理气相沉积或者化学气相沉积方法形成第二电极203和第一电极201。压电层202的材料可以使用氮化铝(AlN)、氧化锌(ZnO)、锆钛酸铅(PZT)、铌酸锂、石英、铌酸钾或钽酸锂等具有纤锌矿型结晶结构的压电材料及它们的组合。当压电层202包括氮化铝(AlN)时，压电层202还可包括稀土金属，例如钪(Sc)、铒(Er)、钇(Y)和镧(La)中的至少一种。此外，当压电层202包括氮化铝(AlN)时，压电层202还可包括过渡金属，例如锆(Zr)、钛(Ti)、锰(Mn)和铪(Hf)中的至少一种。可以使用化学气相沉积、物理气相沉积或原子层沉积等本领域技术人员熟知的任何适合的方法沉积形成压电层202。
本实施例中的沟槽包括第一沟槽41和第二沟槽40，第一沟槽41贯穿所述第一电极201，并贯穿所述压电层202，第二沟槽40贯穿所述第二电极203，并贯穿所述压电层202。本实施例中，所述沟槽的内侧壁构成有效谐振区的至少部分边界，所述有效谐振区内的所述第一电极201、所述压电层202和所述第二电极203在垂直于所述压电层202表面方向上相互叠置。本实施例中，在第一沟槽41的底部位置的第二电极203上设置有第一加固层204，在第二沟槽40的底部位置的第一电极201上设置有第二加固层102。本实施例中，第一加固层204设置于第二电极靠近第一空腔200的表面，第二加固层102设置于第一电极201远离第一空腔200的表面。在其他实施例中，第一加固层也可以设置在第二电极远离第一空腔的表面，还可以在第一电极的上下表面均设置第一加固层，同理，第二加固层可以设置于第一电极的任何一个表面或者设置于第一电极的两个表面。第一沟槽41和/或第二沟槽40使电极端面和压电层的端面与空气接触，进而使沟槽所在的区域声阻抗失配，起到阻止有效区内横波泄露的作用，提高了谐振器的Q值。加固层能够加固沟槽区域的电极，防止薄膜状的电极破损。
加固层的材料包括导电材料或介电材料，当加固层的材料为导电材料时，优选方案中，第一加固层的材料和第二电极的材料相同，第二加固层的材料和第一电极的材料相同。介电材料包括氧化硅、氮化硅、氮氧化硅、碳氮化硅等。
本实施例中，所述第一沟槽41和所述第二沟槽40的内侧壁围成的区域为有效谐振区，两者内侧壁在压电层表面方向上的投影为封闭的图形，该图形为不规则多边形，有效谐振区内的第一电极210、压电层202，第二电极203在垂直于压电层表面方向上相互叠置。在一个典型的实例中，第一沟槽41和第二沟槽40均为连续的结构且两者相对设置，两者的两个端部的投影相接。第一沟槽和/或第二沟槽可以是间断的结构，两者的投影互补，构成封闭的图形。在另一个实施例中，沟槽包括第一沟槽41和所述第二沟槽40，两者的内侧壁只构成一部分有效谐振区的边界。
在另一个实施例中，第一沟槽和/或第二沟槽延伸至压电层中的部分深度，不贯穿压电层。在其他实施例中，沟槽可以只包括第一沟槽或第二沟槽。当沟槽包括第一沟槽时，则在第一沟槽的底部、第二电极203的相应位置处设置第一加固层。当沟槽包括第二沟槽时，则在第二沟槽的底部、第一电极201的相应位置处设置第二加固层。
本实施例中，第一沟槽41底部在所述压电层202表面方向上的投影位于所述第一加固层204在所述压电层202表面方向上的投影的范围内，第二沟槽40底部在所述压电层202表面方向上的投影位于所述第二加固层102在所述压电层202表面方向上的投影的范围内，即加固层完全覆盖沟槽的底部区域，位于沟槽外部的、有效谐振区边界处的加固层不但能够提高电极的结构强度还在此区域形成了声阻抗的不匹配区，达到防止声波的横向泄露，提高谐振器品质因数的作用。
实施例 2
本实施例与实施例1的区别在于，在有效谐振区边界处设置有凸起，所述凸起与所述加固层相对设置，其他结构与实施例1相同。
参考图2，具体地，本实施例中，凸起包括第一凸起和第二凸起。在第一加固层204的水平相对侧、第二沟槽40的内侧壁所在区域设有第二凸起2041，在第二加固层102的水平相对侧、第一沟槽41的内侧壁所在区域设有第一凸起1021。本实施例中，第一凸起1021与第二加固层的材料相同，且两者的厚度也相同，两者在同步工艺中形成；第二凸起2041与第一加固层204的材料相同，且两者的厚度也相同，两者在同步工艺中形成。在其他实施例中，凸起和加固层的材料也可以不同，高度也可以不同。在有效谐振区的边界处设置凸起，可以使凸起所在的区域与有效谐振区实现阻抗失配，防止有效谐振区的横波泄露，提高谐振器的Q值。可选方案中，第一凸起1021和第二加固层102在压电层表面方向上的投影构成封闭的图形和/或第二凸起2041和第一加固层204在压电层表面方向上的投影构成封闭的图形。
在水平方向上第一凸起1021与第二加固层102相对设置，形成完整或接近完整的环形，水平方向上第二凸起2041与第一加固层204相对设置，这种设置方式增大了阻抗失配的区域（有效谐振区的边界均形成阻抗失配区）；在垂直方向上第一凸起1021与第一加固层204存在相对区域，在垂直方向上第二凸起2041与第二加固层102存在相对区域，这样设置能够进一步增大阻抗失配的程度，以上设置方式能够较大程度地防止声波的横向泄露，提高了谐振器的品质因数。。
本发明一实施例提供了一种滤波器，包括实施例1和/或实施例2中的至少一个薄膜体声波谐振器。
实施例 3
实施例3提供了一种薄膜体声波谐振器的制造方法，包括以下步骤：
S01：提供承载衬底，
S02：在所述承载衬底上依次形成第一电极、压电层和第二电极；
S03：在所述第二电极上形成带有第一空腔的第一衬底；
S04：去除所述承载衬底；
S05：所述薄膜体声波谐振器包括第二沟槽和第二加固层，形成所述第二沟槽和第二加固层包括：形成所述第一电极前在所述承载衬底上形成第二加固层；形成所述第二电极后在所述第二加固层的区域上方形成贯穿所述第二电极，并延伸至所述压电层中或贯穿所述压电层的第二沟槽；和/或，所述薄膜体声波谐振器包括第一沟槽和第一加固层，形成所述第一沟槽和第一加固层包括：形成所述第二电极后，在所述第二电极上形成第一加固层；去除所述承载衬底后，在所述第一加固层的区域上方形成贯穿所述第一电极，并延伸至所述压电层中或贯穿所述压电层的第一沟槽。
步骤S0N不代表先后顺序。
图3至图9示出了根据本发明实施例3的一种薄膜压电声波谐振器的制造方法不同步骤对应的结构示意图，请参考图3至图9，详细说明各步骤。
参考图3，执行步骤S01：提供承载衬底100。
承载衬底100可以是以下所提到的材料中的至少一种：硅(Si)、锗(Ge)、锗硅(SiGe)、碳硅(SiC)、碳锗硅(SiGeC)、砷化铟(InAs)、砷化镓(GaAs)、磷化铟(InP)或者其它III/V化合物半导体，也可为氧化铝等的陶瓷基底、石英或玻璃基底等。
本实施例中，薄膜体声波谐振器既包括第一沟槽和第一加固层也包括第二沟槽和第二加固层。所述第一沟槽和/或所述第二沟槽的内侧壁构成有效谐振区的至少部分边界，所述有效谐振区内的所述第一电极、压电层和第二电极在垂直于所述压电层表面方向上相互叠置。执行完步骤S01后，执行步骤S05中的形成第二加固层。具体地，参考图3，在所述承载衬底100上形成第二加固材料层，图形化所述第一加固材料层以形成所述第二加固层102，在所述承载衬底100上、所述第二加固层的外周形成第二介质层101，使所述第二介质层101的表面与所述第二加固层102的表面齐平。第二加固层的材料参照实施例1，可以通过沉积的方法形成第二加固材料层。第二介质层在后期工艺中需要去除，第二介质层选择容易去除的材料，如可以包括低温二氧化硅、聚酰亚胺、无定形碳或锗。第一沟槽和第一加固层的结构形式和作用参照实施例1。
本实施例中薄膜体声波谐振器还包括与第二加固层102在水平方向上相对设置的第一凸起1021。第一凸起1021和第二加固层102的位置关系参照实施例2。本实施例中，第一凸起1021与第二加固层102同步形成，形成所述第一凸起1021包括：形成加固材料层，图形化所述加固材料层形成所述第二加固层102和所述第一凸起1021，第一凸起和加固层的材料和高度均相同。在其他实施例中，第一凸起和第二加固层也可以分别形成，此时第一凸起和加固层的材料或高度可以相同也可以不同。凸起和加固层的结构、位置关系及作用参照实施例1和实施例2的相关描述。
参考图4，执行步骤S02，在第二介质层、第二加固层和第一凸起1021上依次形成第一电极201、压电层202和第二电极203，三者的材料和形成方法按照实施例1，此处不在赘述。
参考图5，执行步骤S05中的形成第一加固层204。通过沉积工艺在所述第二电极203的表面形成第一加固材料层，图形化所述第一加固材料层以形成所述第一加固层204。本实施例中薄膜体声波谐振器还包括与第一加固层204在水平方向上相对设置的第二凸起2041。第二凸起2041和第一加固层204的位置关系参照实施例2。本实施例中，第二凸起2041与第一加固层204同步形成，形成所述第二凸起2041包括：形成加固材料层，图形化所述加固材料层形成所述第一加固层204和所述第二凸起2041，第二凸起和第一加固层的材料和高度均相同。在其他实施例中，第二凸起和第一加固层也可以分别形成，此时第二凸起和第一加固层的材料或高度可以相同也可以不同。
参考图6至图8，S03：在所述第二电极203上形成带有第一空腔200的第一衬底。参考图6，通过物理气相沉积或化学气相沉积形成支撑层205，覆盖所述第二电极203、第一加固层204和第二凸起2041。支撑层205的材料可以是任意适合的介电材料，包括但不限于氧化硅、氮化硅、氮氧化硅、碳氮化硅等材料中的至少一种。参考图7，图形化所述支撑层205，形成所述第一空腔200，本实施例中，第一空腔200贯穿支撑层205。第一空腔暴露出第一加固层204和第二凸起2041，第一空腔200的结构参照实施例1。本实施例中，形成所述第二电极203后，在所述第二加固层102的区域上方形成贯穿所述第二电极203和所述压电层202的第二沟槽40，并使所述第二沟槽40底部在所述压电层202表面方向上的投影位于所述第二加固层102在所述压电层202表面方向上的投影的范围内。需要说明的是，第二沟槽可以在形成支撑层205之前形成，也可以在形成第一空腔200后形成。本实施例中，第二沟槽40形成在第二凸起2041远离有效谐振区的一侧。第二凸起2041和第二加固层102在垂直于压电层表面方向上设有重叠的区域，重叠区域具有更强的阻抗失配效果。
参考图8，提供基底300，将所述基底300键合在所述支撑层205上，覆盖所述第一空腔200，所述第一衬底包括所述支撑层205和所述基底300。基底300的材料和基底300与支撑层205的键合方式参照实施例1，此处不在赘述。
参考图9，执行步骤S04：去除所述承载衬底100。可以通过研磨，湿法腐蚀或刻蚀的方法去除承载衬底100。本实施例中还包括去除第二介质层101。
实施例 4
图10至图16示出了根据本发明实施例4的一种薄膜压电声波谐振器的制造方法不同步骤对应的结构示意图，请参考图10至图16，详细说明各步骤。
参考图10，提供承载衬底100，承载衬底100的材料参照实施例3，在承载衬底100上形成第二加固层102和第二加固层外周的第二介质层101，第二介质层101和第二加固层102的材料和形成方法参照实施例3。
参照图11，在第二介质层101、第二加固层102上依次形成第一电极201、压电层202和第二电极203，三者的材料和形成方法按照实施例1，此处不在赘述。
参考图12，在第二电极203的表面形成第一加固层204，第一加固层的材料和形成方法参照实施例3，此处不再赘述。在第一加固层102上方形成第二沟槽40，第二沟槽40贯穿第二电极203和压电层202，第二沟槽40还可以只贯穿一部分压电层202的厚度，第二沟槽40的结构参照实施例1。
参照图13至图16，在所述第二电极203上形成带有第一空腔的第一衬底。具体为，在所述第二电极203上形成牺牲层206；形成第一衬底，覆盖所述牺牲层206和所述牺牲层206的外周；去除所述牺牲层206，形成所述第一空腔200。
具体为，参照图13，在第二电极203的表面形成牺牲材料层，图形化牺牲材料层，形成牺牲层206，牺牲层206覆盖第一加固层204和第二加固层102围成的区域，并填充第二沟槽，牺牲材料层的材料包括磷硅玻璃、低温二氧化硅、硼磷硅玻璃、锗、碳、聚酰亚胺或光阻剂，根据材料的不同可以通过沉积工艺或旋涂工艺形成牺牲材料层。
参考图14，形成介质层207，覆盖第二牺牲层206和第二牺牲层的外周，介质层207将第二牺牲层206包裹在内，介质层207的材料包括氧化硅、氮化硅、氮氧化硅等材料，可以通过沉积的方法形成介质层207。介质层可以作为第一衬底。本实施例中，还包括在介质层207的上表面形成基板208，基板208可以通过键合工艺键合在介质层207的上表面，键合基板208的目的是缩短沉积介质层的时间，因为牺牲层206表面上方需要一定的厚度，以提高第一衬底的结构强度，通过沉积的方式形成一定厚度的介质层207较慢，通过键合基板208缩短了工艺时间。
参照图15，去除所述承载衬底100。可以通过研磨，湿法腐蚀或刻蚀的方法去除承载衬底100。本实施例中还包括去除第二介质层101。去除承载衬底100后，在第一加固层204的上方形成第一沟槽41，第一沟槽41贯穿第一电极201和压电层202，第一沟槽41还可以只贯穿一部分压电层202的厚度，第一沟槽41的结构参照实施例1。
参照图16，去除牺牲层，形成第一空腔200，可以在第一空腔的上方，第一加固层和第二加固层的外部形成贯穿第一电极201、压电层202和第二电极203的释放孔，通过释放孔去除牺牲层。根据选择的牺牲层材料，采用相对应的去除方法，比如当牺牲层材料为聚酰亚胺或光阻剂时，采用灰化的方法去除，灰化的方法具体为在250摄氏度的温度下，通过释放孔的氧与牺牲层材料发生化学反应，生成气体物质挥发掉，当牺牲层材料为低温二氧化硅时，用氢氟酸溶剂和低温二氧化硅发生反应去除。
本实施例中既形成第一沟槽和第一加固层也形成第二沟槽和第二加固层，根据本实施例的方法，也可以只形成其中一个沟槽和相对应的加固层。本实施例中，没有形成第一凸起和第二凸起，应当理解，利用本实施例的方法也可以形成第一凸起和第二凸起，形成的位置和方法参照实施例3即可。
 
需要说明的是，本说明书中的各个实施例均采用相关的方式描述，各个实施例之间相同相似的部分互相参见即可，每个实施例重点说明的都是与其他实施例的不同之处。尤其，对于方法实施例而言，由于其基本相似于结构实施例，所以描述的比较简单，尤其对于实施例4，相同结构的材料，位置关系和形成方法的相关之处参见实施例3的说明即可。
上述描述仅是对本发明较佳实施例的描述，并非对本发明范围的任何限定，本发明领域的普通技术人员根据上述揭示内容做的任何变更、修饰，均属于权利要求书的保护范围。

Claims (18)

  1. 一种薄膜体声波谐振器，其特征在于，包括：
    第一衬底，所述第一衬底的上表面设有第一空腔；
    压电叠层结构，设置于所述第一衬底的上表面，覆盖所述第一空腔，所述压电叠层结构从下至上包括依次层叠的第二电极、压电层和第一电极；
    沟槽，包括第一沟槽和/或第二沟槽，所述第一沟槽贯穿所述第一电极，并延伸至所述压电层中或贯穿所述压电层，所述第二沟槽贯穿所述第二电极并延伸至所述压电层中或贯穿所述压电层；
    加固层，设置于所述沟槽的底部位置的所述第一电极或所述第二电极的至少一侧。
  2. 如权利要求1所述的薄膜体声波谐振器，其特征在于，所述薄膜体声波谐振器包括第一沟槽和第二沟槽，所述第一沟槽和所述第二沟槽的内侧壁围成的区域为所述有效谐振区。
  3. 如权利要求1所述的薄膜体声波谐振器，其特征在于，所述加固层设置于所述沟槽的底部位置的所述第一电极或所述第二电极远离所述沟槽底部的一侧表面。
  4. 如权利要求1所述的薄膜体声波谐振器，所述沟槽底部在所述压电层表面方向上的投影位于所述加固层在所述压电层表面方向上的投影的范围内。
  5. 如权利要求1所述的薄膜体声波谐振器，其特征在于，所述加固层的材料包括导电材料或介电材料。
  6. 如权利要求1所述的薄膜体声波谐振器，其特征在于，所述有效谐振区边界处设置有凸起，所述凸起与所述加固层相对设置。
  7. 如权利要求6所述的薄膜体声波谐振器，其特征在于，所述凸起的材料与加固层的材料相同。
  8. 如权利要求6所述的薄膜体声波谐振器，其特征在于，所述凸起与所述加固层的高度相同。
  9. 一种滤波器，包括至少一个权利要求1至8任一项所述的薄膜体声波谐振器。
  10. 一种薄膜体声波谐振器的制造方法，其特征在于，包括：
    提供承载衬底，
    在所述承载衬底上依次形成第一电极、压电层和第二电极；
    在所述第二电极上形成带有第一空腔的第一衬底；
    去除所述承载衬底；
    所述薄膜体声波谐振器包括第二沟槽和第二加固层，形成所述第二沟槽和第二加固层包括：形成所述第一电极前在所述承载衬底上形成第二加固层；形成所述第二电极后在所述第二加固层的区域上方形成贯穿所述第二电极，并延伸至所述压电层中或贯穿所述压电层的第二沟槽；和/或，
    所述薄膜体声波谐振器包括第一沟槽和第一加固层，形成所述第一沟槽和第一加固层包括：形成所述第二电极后，在所述第二电极上形成第一加固层；去除所述承载衬底后，在所述第一加固层的区域上方形成贯穿所述第一电极，并延伸至所述压电层中或贯穿所述压电层的第一沟槽。
  11. 如权利要求10所述的薄膜体声波谐振器的制造方法，其特征在于，所述在所述承载衬底上形成第二加固层包括：
    在所述承载衬底上形成第二加固材料层，图形化所述第一加固材料层以形成所述第二加固层，在所述承载衬底上、所述第二加固层的外周形成第二介质层，使所述第二介质层的表面与所述第二加固层的表面齐平；
    去除所述承载衬底后，还包括去除所述第二介质层。
  12. 如权利要求10所述的薄膜体声波谐振器的制造方法，其特征在于，所述在所述第二电极上形成第一加固层包括：
    通过沉积工艺在所述第二电极的表面形成第一加固材料层，图形化所述第一加固材料层以形成所述第一加固层。
  13. 如权利要求10所述的薄膜体声波谐振器的制造方法，其特征在于，形成所述第二沟槽包括：
    形成所述第二电极后，在所述第二加固层的区域上方形成贯穿所述第二电极和所述压电层的第二沟槽，并使所述第二沟槽底部在所述压电层表面方向上的投影位于所述第二加固层在所述压电层表面方向上的投影的范围内。
  14. 如权利要求10所述的薄膜体声波谐振器的制造方法，其特征在于，形成所述第一沟槽包括：
    去除所述承载衬底后，在所述第一加固层的区域上方形成贯穿所述第一电极和所述压电层的第一沟槽，并使所述第一沟槽底部在所述压电层表面方向上的投影位于所述第一加固层在所述压电层表面方向上的投影的范围内。
  15. 如权利要求10所述的薄膜体声波谐振器的制造方法，其特征在于，形成带有第一空腔的第一衬底的方法包括：
    形成支撑层，覆盖所述第二电极；
    图形化所述支撑层，形成所述第一空腔；
    提供基底，将所述基底键合在所述支撑层上，覆盖所述第一空腔，所述第一衬底包括所述支撑层和所述基底；
    或，在所述第二电极上形成牺牲层；
    形成第一衬底，覆盖所述牺牲层和所述牺牲层的外周；
    去除所述牺牲层，形成所述第一空腔。
  16. 如权利要求10所述的薄膜体声波谐振器的制造方法，其特征在于，所述薄膜体声波谐振器包括第一沟槽和第二沟槽，所述第一沟槽和所述第二沟槽的内侧壁围成的区域为所述有效谐振区。
  17. 如权利要求10所述的薄膜体声波谐振器的制造方法，其特征在于，所述薄膜体声波谐振器包括第二沟槽和第二加固层，所述方法还包括：在所述有效谐振区的边界处形成第一凸起，所述第一凸起突出于所述第一电极的表面，所述第一凸起与所述第二加固层相对设置，所述第一凸起与所述第二加固层同步形成，形成所述第一凸起包括：形成加固材料层，图形化所述加固材料层形成所述第二加固层和所述第一凸起。
  18. 如权利要求10所述的薄膜体声波谐振器的制造方法，其特征在于，所述薄膜体声波谐振器包括第一沟槽和第一加固层，所述方法还包括：在所述有效谐振区的边界处形成第二凸起，所述第二凸起突出于所述第二电极的表面，所述第二凸起与所述第一加固层相对设置，所述第二凸起与所述第一加固层同步形成，形成所述第二凸起包括：形成加固材料层，图形化加固材料层形成所述第一加固层和所述第二凸起。
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