WO2022072947A1 - Ion current droop compensation - Google Patents
Ion current droop compensation Download PDFInfo
- Publication number
- WO2022072947A1 WO2022072947A1 PCT/US2021/053436 US2021053436W WO2022072947A1 WO 2022072947 A1 WO2022072947 A1 WO 2022072947A1 US 2021053436 W US2021053436 W US 2021053436W WO 2022072947 A1 WO2022072947 A1 WO 2022072947A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- voltage
- plasma chamber
- pulses
- pulse generator
- high voltage
- Prior art date
Links
- 230000009467 reduction Effects 0.000 claims abstract description 13
- 239000003990 capacitor Substances 0.000 claims description 84
- 238000004804 winding Methods 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000012545 processing Methods 0.000 claims description 19
- 210000003127 knee Anatomy 0.000 claims description 14
- 239000007787 solid Substances 0.000 claims description 5
- 238000011084 recovery Methods 0.000 description 50
- 150000002500 ions Chemical class 0.000 description 31
- 238000004146 energy storage Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 12
- 230000008878 coupling Effects 0.000 description 10
- 238000010168 coupling process Methods 0.000 description 10
- 238000005859 coupling reaction Methods 0.000 description 10
- 238000012937 correction Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000007792 addition Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3467—Pulsed operation, e.g. HIPIMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/017—Adjustment of width or dutycycle of pulses
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/64—Generators producing trains of pulses, i.e. finite sequences of pulses
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/78—Generating a single train of pulses having a predetermined pattern, e.g. a predetermined number
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020237015060A KR20230074593A (ko) | 2020-10-02 | 2021-10-04 | 이온 전류 드룹 보상 |
| CN202180067796.0A CN116636144A (zh) | 2020-10-02 | 2021-10-04 | 离子电流下降补偿 |
| EP21876672.3A EP4222861A1 (en) | 2020-10-02 | 2021-10-04 | Ion current droop compensation |
| JP2023520043A JP2023544584A (ja) | 2020-10-02 | 2021-10-04 | イオン電流ドループ補償 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202063087150P | 2020-10-02 | 2020-10-02 | |
| US63/087,150 | 2020-10-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2022072947A1 true WO2022072947A1 (en) | 2022-04-07 |
Family
ID=80951755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2021/053436 WO2022072947A1 (en) | 2020-10-02 | 2021-10-04 | Ion current droop compensation |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP4222861A1 (zh) |
| JP (1) | JP2023544584A (zh) |
| KR (1) | KR20230074593A (zh) |
| CN (1) | CN116636144A (zh) |
| WO (1) | WO2022072947A1 (zh) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120052599A1 (en) * | 2010-08-29 | 2012-03-01 | Advanced Energy Industries, Inc. | Wafer Chucking System for Advanced Plasma Ion Energy Processing Systems |
| US20190393791A1 (en) * | 2014-02-28 | 2019-12-26 | Eagle Harbor Technologies, Inc. | Nanosecond pulser bias compensation |
| US20200035458A1 (en) * | 2018-07-27 | 2020-01-30 | Eagle Harbor Technologies, Inc. | Nanosecond pulser pulse generation |
| WO2020148436A1 (fr) * | 2019-01-17 | 2020-07-23 | Guerbet | Complexe de gadolinium et d'un ligand chelateur derive de pcta diastereoisomeriquement enrichi et procede de preparation et de purification |
-
2021
- 2021-10-04 KR KR1020237015060A patent/KR20230074593A/ko unknown
- 2021-10-04 CN CN202180067796.0A patent/CN116636144A/zh active Pending
- 2021-10-04 EP EP21876672.3A patent/EP4222861A1/en active Pending
- 2021-10-04 JP JP2023520043A patent/JP2023544584A/ja active Pending
- 2021-10-04 WO PCT/US2021/053436 patent/WO2022072947A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120052599A1 (en) * | 2010-08-29 | 2012-03-01 | Advanced Energy Industries, Inc. | Wafer Chucking System for Advanced Plasma Ion Energy Processing Systems |
| US20190393791A1 (en) * | 2014-02-28 | 2019-12-26 | Eagle Harbor Technologies, Inc. | Nanosecond pulser bias compensation |
| US20200035458A1 (en) * | 2018-07-27 | 2020-01-30 | Eagle Harbor Technologies, Inc. | Nanosecond pulser pulse generation |
| US20200244254A1 (en) * | 2018-07-27 | 2020-07-30 | Eagle Harbor Technologies, Inc. | Nanosecond pulser adc system |
| WO2020148436A1 (fr) * | 2019-01-17 | 2020-07-23 | Guerbet | Complexe de gadolinium et d'un ligand chelateur derive de pcta diastereoisomeriquement enrichi et procede de preparation et de purification |
Also Published As
| Publication number | Publication date |
|---|---|
| EP4222861A1 (en) | 2023-08-09 |
| JP2023544584A (ja) | 2023-10-24 |
| CN116636144A (zh) | 2023-08-22 |
| KR20230074593A (ko) | 2023-05-30 |
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