WO2022071613A1 - Appareil et procédé pour auto-assemblage de diodes électroluminescentes à semi-conducteur - Google Patents

Appareil et procédé pour auto-assemblage de diodes électroluminescentes à semi-conducteur Download PDF

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Publication number
WO2022071613A1
WO2022071613A1 PCT/KR2020/013298 KR2020013298W WO2022071613A1 WO 2022071613 A1 WO2022071613 A1 WO 2022071613A1 KR 2020013298 W KR2020013298 W KR 2020013298W WO 2022071613 A1 WO2022071613 A1 WO 2022071613A1
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Prior art keywords
assembly
light emitting
semiconductor light
substrate
magnet
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PCT/KR2020/013298
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English (en)
Korean (ko)
Inventor
김기수
이진형
신용일
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엘지전자 주식회사
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Application filed by 엘지전자 주식회사 filed Critical 엘지전자 주식회사
Priority to KR1020237004650A priority Critical patent/KR20230038739A/ko
Priority to PCT/KR2020/013298 priority patent/WO2022071613A1/fr
Priority to US18/024,371 priority patent/US20230317491A1/en
Publication of WO2022071613A1 publication Critical patent/WO2022071613A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/951—Supplying the plurality of semiconductor or solid-state bodies
    • H01L2224/95101—Supplying the plurality of semiconductor or solid-state bodies in a liquid medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other

Definitions

  • the present invention relates to an apparatus for self-assembling a semiconductor light emitting device on a substrate and a self-assembly method using the same in manufacturing a display device using a semiconductor light emitting device having a size of several to several tens of ⁇ m.
  • LCDs liquid crystal displays
  • OLEDs organic light emitting device displays
  • semiconductor light emitting device displays are competing to implement large-area displays in the display technology field.
  • micro LED semiconductor light emitting device having a cross-sectional area of 100 ⁇ m or less
  • very high efficiency can be provided because the display does not absorb light using a polarizing plate or the like.
  • millions of semiconductor light emitting devices are required to implement a large-area display, the transfer process is difficult compared to other types of displays.
  • micro LEDs can be transferred by pick-and-place, laser lift-off, or self-assembly.
  • the self-assembly method is the most advantageous method for realizing a large-area display device in a way in which the semiconductor light emitting devices find their own positions in a fluid.
  • An object of the present invention is to provide a self-assembly device used in a self-assembly process for manufacturing a display device using a micro LED and a self-assembly method using the same.
  • the present invention is to provide a self-assembly apparatus used to transfer a micro LED to a large-area substrate and a self-assembly method using the same.
  • An apparatus for self-assembly of a semiconductor light emitting device comprises: an assembly chamber in which a fluid and semiconductor light emitting devices are accommodated; a magnetic chuck disposed above the assembly chamber and applying a magnetic force to induce movement of the semiconductor light emitting devices in the assembly chamber while moving in a horizontal direction; a substrate chuck for disposing an assembly substrate on which semiconductor light emitting devices in the assembly chamber are mounted between the assembly chamber and the magnetic chuck, and supporting the assembly substrate; and a control unit for controlling driving of the magnetic chuck and the substrate chuck, wherein the magnetic chuck includes: a magnetic force forming unit including a plurality of magnets; and a vacuum forming part for correcting the bending phenomenon of the assembly substrate by using a vacuum pressure between the plurality of magnets so that one side of the magnetic chuck and the assembly substrate maintain a predetermined distance.
  • the magnetic force forming unit arranged in a plurality of rows and columns, the magnet receiving portion having a space in which some of the plurality of magnets are accommodated; an assembly magnet disposed in the magnet accommodating part; and a first cushion magnet disposed on the outside of the magnet accommodating part so as to be spaced apart from the assembled magnet.
  • the magnet accommodating part includes an opening on one side adjacent to the assembly substrate, and a part of the assembly magnet is exposed through the opening.
  • the magnetic force forming unit further includes a second cushion magnet disposed between the first cushion magnet and the assembly magnet, the second cushion magnet being fixedly disposed on one surface within the magnet accommodating part characterized.
  • a repulsive force acts between the first cushion magnet and the second cushion magnet, and an attractive force acts between the second cushion magnet and the assembled magnet.
  • the vacuum forming part is provided between the plurality of magnets, and one side is connected to a vacuum pump to provide vacuum pressure to the assembly substrate, and it is characterized in that it includes vacuum holes.
  • the substrate chuck is characterized in that it includes a power applying unit for applying power to the assembly substrate so that an electric field is formed on one surface of the assembly substrate.
  • the magnet chuck is disposed so that one side of the magnetic chuck and the assembly substrate have a gap of 2 mm or less, and one side of the magnetic chuck is one surface of the assembly magnet adjacent to the assembly substrate.
  • the present invention is disposed below the assembly chamber, characterized in that it further comprises a sensor for monitoring the inside of the assembly chamber.
  • a method of self-assembly of a semiconductor light emitting device includes the steps of supplying the semiconductor light emitting devices in an assembly chamber containing a fluid; disposing an assembly substrate including cells on which assembly electrodes and the semiconductor light emitting devices are mounted on an upper side of the assembly chamber; disposing a magnetic chuck including a magnetic force forming unit and a vacuum forming unit including a plurality of magnets on an upper side of the assembly substrate; and mounting the semiconductor light emitting devices on the assembly substrate using a magnetic field and an electric field, wherein, while the step of seating the semiconductor light emitting devices on the assembly substrate is in progress, the assembly substrate is vacuum formed by the vacuum forming unit. It is characterized in that the pressure is continuously applied.
  • the magnetic force forming unit arranged in a plurality of rows and columns, the magnet receiving portion having a space in which some of the plurality of magnets are accommodated; an assembly magnet disposed in the magnet accommodating part; and a first cushion magnet disposed on the outside of the magnet accommodating part so as to be spaced apart from the assembled magnets.
  • the magnetic force forming unit further comprises a second cushion magnet disposed between the first cushion magnet and the assembly magnet, wherein the second cushion magnet is fixedly disposed on one surface within the magnet accommodating part do it with
  • the disposing of the magnet chuck may include disposing the magnet chuck so that the assembling substrate and one surface of the assembling magnet adjacent to the assembling substrate have a gap of 2 mm or less.
  • the step of seating the semiconductor light emitting devices on the assembly substrate is characterized in that an electric field is formed as power is applied to the assembly electrodes.
  • the step of seating the semiconductor light emitting devices on the assembly substrate may include: moving the magnetic chuck in a horizontal direction; and applying power to at least some of the assembled electrodes overlapping the assembled magnets.
  • At least some of the assembled magnets are characterized in that they further move in the vertical direction.
  • a large amount of semiconductor light emitting devices can be efficiently transferred to a large-area substrate.
  • the assembly deviation within the substrate is improved, and high-speed transfer has a possible effect.
  • the substrate bent by gravity is drawn in the opposite direction to the gravity by using vacuum pressure, there is an effect of correcting the warpage of the substrate without damaging the substrate.
  • FIG. 1 is a conceptual diagram illustrating an embodiment of a display device using a semiconductor light emitting device of the present invention.
  • FIG. 2 is an enlarged view of a portion A of the display device of FIG. 1 .
  • FIG. 3 is an enlarged view of the semiconductor light emitting device of FIG. 2 .
  • FIG. 4 is a view showing another embodiment of the semiconductor light emitting device of FIG. 2 .
  • 5A to 5E are conceptual views for explaining a new process of manufacturing the above-described semiconductor light emitting device.
  • FIG. 6 is a conceptual diagram illustrating an embodiment of an apparatus for self-assembling a semiconductor light emitting device according to the present invention.
  • FIG. 7 is a block diagram of the self-assembly apparatus of FIG. 6 .
  • 8A to 8E are conceptual views illustrating a process of self-assembling semiconductor light emitting devices on a substrate using the self-assembly apparatus of FIG. 6 .
  • FIGS. 8A to 8E are diagrams illustrating an embodiment of a semiconductor light emitting device used in the self-assembly process of FIGS. 8A to 8E .
  • FIG. 10 is a diagram illustrating a bending phenomenon of a substrate that occurs during self-assembly.
  • FIG. 11 is a conceptual diagram illustrating an embodiment of an apparatus for self-assembly of a semiconductor light emitting device having a novel structure according to the present invention.
  • FIG. 12 is a conceptual diagram illustrating an embodiment of the structure and operation of a magnetic force forming unit according to the present invention.
  • FIG. 13 is a flowchart illustrating a self-assembly method according to the present invention.
  • FIG. 14 is a conceptual diagram for explaining the horizontal movement of the magnetic chuck in the self-assembly method according to the present invention.
  • 15 is a conceptual diagram for explaining the vertical movement of the assembled magnet in the self-assembly method according to the present invention.
  • the display device described in this specification includes a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation system, and a slate PC.
  • PDA personal digital assistant
  • PMP portable multimedia player
  • slate PC slate PC
  • slate PC tablet PC
  • ultrabook ultrabook
  • digital TV digital TV
  • desktop computer desktop computer
  • the configuration according to the embodiment described in this specification can be applied as long as it can include a display even in a new product form to be developed later.
  • FIG. 1 is a conceptual diagram illustrating an embodiment of a display device using a semiconductor light emitting device of the present invention
  • FIG. 2 is an enlarged view of part A of the display device of FIG. 1
  • FIG. 3 is a view showing the semiconductor light emitting device of FIG. 2 It is an enlarged view
  • FIG. 4 is a view showing another embodiment of the semiconductor light emitting device of FIG. 2 .
  • information processed by the control unit of the display apparatus 100 may be output through the display module 140 .
  • the closed-loop case 101 surrounding the edge of the display module 140 may form a bezel of the display device 100 .
  • the display module 140 includes a panel 141 on which an image is displayed, and the panel 141 includes a micro-sized semiconductor light emitting device 150 and a wiring board 110 on which the semiconductor light emitting device 150 is mounted. can be provided.
  • a wiring may be formed on the wiring board 110 to be connected to the n-type electrode 152 and the p-type electrode 156 of the semiconductor light emitting device 150 .
  • the semiconductor light emitting device 150 may be provided on the wiring board 110 as an individual pixel that emits light.
  • the image displayed on the panel 141 is visual information, and is realized by independently controlling light emission of unit pixels arranged in a matrix form through the wiring.
  • a micro LED Light Emitting Diode
  • the micro LED may be a light emitting diode formed in a small size of 100 ⁇ m or less.
  • blue, red, and green colors are respectively provided in the light emitting region, and a unit pixel may be implemented by a combination thereof. That is, the unit pixel means a minimum unit for realizing one color, and at least three micro LEDs may be provided in the unit pixel.
  • the semiconductor light emitting device 150 may have a vertical structure.
  • the semiconductor light emitting device 150 is mainly made of gallium nitride (GaN), and indium (In) and/or aluminum (Al) are added together to be implemented as a high power light emitting device that emits various lights including blue.
  • GaN gallium nitride
  • Al aluminum
  • the vertical semiconductor light emitting device includes a p-type electrode 156 , a p-type semiconductor layer 155 formed on the p-type electrode 156 , an active layer 154 formed on the p-type semiconductor layer 155 , and an active layer 154 . It includes an n-type semiconductor layer 153 formed thereon and an n-type electrode 152 formed on the n-type semiconductor layer 153 .
  • the lower p-type electrode 156 may be electrically connected to the p-electrode 111 of the wiring board, and the upper n-type electrode 152 is connected to the n-electrode 112 and the upper side of the semiconductor light emitting device. may be electrically connected.
  • the vertical semiconductor light emitting device 150 has a great advantage in that it is possible to reduce the chip size because electrodes can be arranged vertically.
  • the semiconductor light emitting device may be a flip chip type light emitting device.
  • the semiconductor light emitting device 250 includes a p-type electrode 256 , a p-type semiconductor layer 255 on which the p-type electrode 256 is formed, an active layer 254 formed on the p-type semiconductor layer, and an active layer ( An n-type semiconductor layer 253 formed on the 254 , and an n-type electrode 252 spaced apart from the p-type electrode 256 in the horizontal direction on the n-type semiconductor layer 253 are included.
  • both the p-type electrode 256 and the n-type electrode 252 may be electrically connected to the p-electrode and the n-electrode of the wiring board under the semiconductor light emitting device 250 .
  • the vertical semiconductor light emitting device and the flip chip type semiconductor light emitting device may be a green semiconductor light emitting device, a blue semiconductor light emitting device, or a red semiconductor light emitting device, respectively.
  • gallium nitride (GaN) is mainly used, and indium (In) and/or aluminum (Al) are added together to implement a high output light emitting device that emits green or blue light.
  • the semiconductor light emitting device may be a gallium nitride thin film formed in various layers such as n-GaN, p-GaN, AlGaN, InGaN, etc.
  • the p-type semiconductor layer is P-type GaN
  • the n-type semiconductor layer may be N-type GaN.
  • the p-type semiconductor layer may be P-type GaAs
  • the n-type semiconductor layer may be N-type GaAs.
  • the p electrode side of the p-type semiconductor layer may be P-type GaN doped with Mg
  • the n electrode side of the n-type semiconductor layer may be N-type GaN doped with Si.
  • the above-described semiconductor light emitting devices may be semiconductor light emitting devices without an active layer.
  • the self-luminous unit pixels can be arranged in a high definition in the display panel, thereby realizing a high-definition display device.
  • the semiconductor light emitting device grown on a wafer and formed through mesa and isolation is used as an individual pixel.
  • the micro-sized semiconductor light emitting device 150 formed on the wafer must be transferred to a predetermined position on the substrate of the display panel.
  • There is a pick-and-place method as such a transfer technology but the success rate is very low and a lot of time is required.
  • there is a technique of transferring several devices at a time using a stamp or a roll but it is not suitable for a large screen display due to a limitation in yield.
  • the present invention proposes a new manufacturing method and manufacturing apparatus of a display device that can solve these problems.
  • 5A to 5E are conceptual views for explaining a new process of manufacturing the above-described semiconductor light emitting device.
  • a display device using a passive matrix (PM) type semiconductor light emitting device is exemplified.
  • PM passive matrix
  • AM active matrix
  • the self-assembly method described in this specification may be applied to both a horizontal type semiconductor light emitting device and a vertical type semiconductor light emitting device.
  • the first conductivity type semiconductor layer 153 , the active layer 154 , and the second conductivity type semiconductor layer 155 are grown on the growth substrate 159 , respectively ( FIG. 5A ).
  • first conductivity type semiconductor layer 153 After the first conductivity type semiconductor layer 153 is grown, an active layer 154 is grown on the first conductivity type semiconductor layer 153 , and then a second conductivity type semiconductor is grown on the active layer 154 . Layer 155 is grown. In this way, when the first conductivity type semiconductor layer 153, the active layer 154, and the second conductivity type semiconductor layer 155 are sequentially grown, as shown in FIG. 5A, the first conductivity type semiconductor layer 153 , the active layer 154 and the second conductive semiconductor layer 155 form a stacked structure.
  • the first conductivity type semiconductor layer 153 may be an n-type semiconductor layer
  • the second conductivity type semiconductor layer 155 may be a p-type semiconductor layer.
  • the present invention is not necessarily limited thereto, and examples in which the first conductivity type is p-type and the second conductivity type is n-type are also possible.
  • the p-type GaN side of the p-type semiconductor layer may be P-type GaN doped with Mg
  • the n-type GaN side of the n-type semiconductor layer may be Si doped N-type GaN.
  • the growth substrate 159 may be formed of a material having a light-transmitting property, for example, any one of sapphire (Al2O3), GaN, ZnO, and AlO, but is not limited thereto.
  • the growth substrate 159 may be formed of a carrier wafer, a material suitable for the growth of a semiconductor material.
  • the growth substrate 159 may be formed of a material having excellent thermal conductivity, including a conductive substrate or an insulating substrate, for example, a SiC substrate or Si, GaAs, which has high thermal conductivity compared to a sapphire (Al2O3) substrate, At least one of GaP, InP, and Ga2O3 may be used.
  • the first conductivity type semiconductor layer 153 , the active layer 154 , and the second conductivity type semiconductor layer 155 are removed to form a plurality of semiconductor light emitting devices ( FIG. 5B ).
  • isolation is performed so that the plurality of light emitting devices form a light emitting device array. That is, the first conductivity type semiconductor layer 153 , the active layer 154 , and the second conductivity type semiconductor layer 155 are vertically etched to form a plurality of semiconductor light emitting devices.
  • the active layer 154 and the second conductivity type semiconductor layer 155 are partially removed in the vertical direction so that the first conductivity type semiconductor layer 153 is exposed to the outside.
  • An exposed mesa process, followed by an isolation of the first conductive semiconductor layer to form a plurality of semiconductor light emitting device arrays by etching may be performed.
  • second conductivity type electrodes 156 are respectively formed on one surface of the second conductivity type semiconductor layer 155 ( FIG. 5C ).
  • the second conductive electrode 156 may be formed by a deposition method such as sputtering, but the present invention is not limited thereto. However, when the first conductive semiconductor layer and the second conductive semiconductor layer are an n-type semiconductor layer and a p-type semiconductor layer, respectively, the second conductive electrode 156 may be an n-type electrode.
  • the growth substrate 159 is removed to provide a plurality of semiconductor light emitting devices.
  • the growth substrate 1059 may be removed using a laser lift-off (LLO) method or a chemical lift-off (CLO) method ( FIG. 5D ).
  • FIG. 5E a step of mounting the semiconductor light emitting devices 150 on a substrate in a chamber filled with a fluid is performed.
  • the semiconductor light emitting devices 150 and the substrate are put in a chamber filled with a fluid, and the semiconductor light emitting devices are self-assembled on the substrate 1061 using flow, gravity, surface tension, and the like.
  • the substrate may be the assembly substrate 161 .
  • the substrate may be a wiring substrate.
  • the substrate is provided as the assembly substrate 161 to exemplify that the semiconductor light emitting devices 1050 are seated.
  • Cells in which the semiconductor light emitting devices 150 are inserted may be provided on the assembly substrate 161 to facilitate mounting of the semiconductor light emitting devices 150 on the assembly substrate 161 .
  • cells in which the semiconductor light emitting devices 150 are seated are formed on the assembly substrate 161 at positions where the semiconductor light emitting devices 150 are aligned with the wiring electrodes.
  • the semiconductor light emitting devices 150 are assembled to the cells while moving in the fluid.
  • the assembly substrate 161 may be referred to as a temporary substrate.
  • the present invention proposes a method and apparatus for minimizing the influence of gravity or frictional force and preventing non-specific binding in order to increase the transfer yield.
  • a magnetic material is disposed on the semiconductor light emitting device to move the semiconductor light emitting device using magnetic force, and the semiconductor light emitting device is seated at a preset position using an electric field during the movement process.
  • FIG. 6 is a conceptual diagram illustrating an example of a self-assembly apparatus for a semiconductor light emitting device according to the present invention
  • FIG. 7 is a block diagram of the self-assembly apparatus of FIG. 6
  • 8A to 8D are conceptual views illustrating a process of self-assembling a semiconductor light emitting device using the self-assembly apparatus of FIG. 6
  • FIG. 9 is a conceptual diagram for explaining the semiconductor light emitting device of FIGS. 8A to 8D .
  • the self-assembly apparatus 160 of the present invention may include a fluid chamber 162 , a magnet 163 and a position control unit 164 .
  • the fluid chamber 162 has a space for accommodating a plurality of semiconductor light emitting devices.
  • the space may be filled with a fluid, and the fluid may include water as an assembly solution.
  • the fluid chamber 162 may be a water tank, and may be configured as an open type.
  • the present invention is not limited thereto, and the fluid chamber 162 may be of a closed type in which the space is a closed space.
  • the substrate 161 may be disposed in the fluid chamber 162 so that an assembly surface on which the semiconductor light emitting devices 150 are assembled faces downward.
  • the substrate 161 may be transferred to an assembly position by a transfer unit, and the transfer unit may include a stage 165 on which the substrate is mounted. The position of the stage 165 is adjusted by the controller, and through this, the substrate 161 can be transferred to the assembly position.
  • the assembly surface of the substrate 161 faces the bottom of the fluid chamber 150 .
  • the assembly surface of the substrate 161 is disposed to be immersed in the fluid in the fluid chamber 162 . Accordingly, the semiconductor light emitting device 150 moves to the assembly surface in the fluid.
  • the substrate 161 is an assembled substrate capable of forming an electric field, and may include a base portion 161a, a dielectric layer 161b, and a plurality of electrodes 161c.
  • the base portion 161a may be made of an insulating material, and the plurality of electrodes 161c may be a thin film or a thick film bi-planar electrode patterned on one surface of the base portion 161a.
  • the electrode 161c may be formed of, for example, a stack of Ti/Cu/Ti, Ag paste, ITO, or the like.
  • the dielectric layer 161b is made of an inorganic material such as SiO2, SiNx, SiON, Al2O3, TiO2, HfO2, or the like. Alternatively, the dielectric layer 161b may be configured as a single layer or multi-layer as an organic insulator. The dielectric layer 161b may have a thickness of several tens of nm to several ⁇ m.
  • the substrate 161 according to the present invention includes a plurality of cells 161d partitioned by barrier ribs.
  • the cells 161d are sequentially arranged in one direction and may be made of a polymer material.
  • the partition walls 161e forming the cells 161d are shared with the neighboring cells 161d.
  • the partition wall 161e protrudes from the base part 161a, and the cells 161d may be sequentially disposed along one direction by the partition wall 161e. More specifically, the cells 161d are sequentially arranged in the column and row directions, respectively, and may have a matrix structure.
  • a groove for accommodating the semiconductor light emitting device 150 is provided, and the groove may be a space defined by the partition wall 161e.
  • the shape of the groove may be the same as or similar to that of the semiconductor light emitting device.
  • the groove may have a rectangular shape.
  • the grooves formed in the cells may have a circular shape.
  • each of the cells is configured to accommodate a single semiconductor light emitting device. That is, one semiconductor light emitting device is accommodated in one cell.
  • the plurality of electrodes 161c may include a plurality of electrode lines disposed at the bottom of each of the cells 161d, and the plurality of electrode lines may extend to neighboring cells.
  • the plurality of electrodes 161c are disposed below the cells 161d, and different polarities are applied to each other to generate an electric field in the cells 161d.
  • the dielectric layer may form the bottom of the cells 161d while covering the plurality of electrodes 161c with the dielectric layer.
  • the electrodes of the substrate 161 are electrically connected to the power supply unit 171 .
  • the power supply unit 171 applies power to the plurality of electrodes to generate the electric field.
  • the self-assembly apparatus may include a magnet 163 for applying a magnetic force to the semiconductor light emitting devices.
  • the magnet 163 is spaced apart from the fluid chamber 162 to apply a magnetic force to the semiconductor light emitting devices 150 .
  • the magnet 163 may be disposed to face the opposite surface of the assembly surface of the substrate 161 , and the position of the magnet is controlled by the position controller 164 connected to the magnet 163 .
  • the semiconductor light emitting device 1050 may include a magnetic material to move in the fluid by the magnetic field of the magnet 163 .
  • a semiconductor light emitting device including a magnetic material, a first conductivity type electrode 1052 , a second conductivity type electrode 1056 , and a first conductivity type semiconductor layer in which the first conductivity type electrode 1052 are disposed (1053), a second conductivity type semiconductor layer 1055 overlapping the first conductivity type semiconductor layer 1052 and on which the second conductivity type electrode 1056 is disposed, and the first and second conductivity type semiconductors an active layer 1054 disposed between the layers 1053 and 1055 .
  • the first conductivity type may be p-type
  • the second conductivity type may be n-type
  • the semiconductor light emitting device without the active layer may be used.
  • the first conductive electrode 1052 may be generated after the semiconductor light emitting device is assembled on the wiring board by self-assembly of the semiconductor light emitting device.
  • the second conductive electrode 1056 may include the magnetic material.
  • the magnetic material may mean a magnetic metal.
  • the magnetic material may be Ni, SmCo, or the like, and as another example, may include a material corresponding to at least one of Gd-based, La-based, and Mn-based materials.
  • the magnetic material may be provided on the second conductive electrode 1056 in the form of particles.
  • a conductive electrode including a magnetic material one layer of the conductive electrode may be formed of a magnetic material.
  • the second conductive electrode 1056 of the semiconductor light emitting device 1050 may include a first layer 1056a and a second layer 1056b.
  • the first layer 1056a may include a magnetic material
  • the second layer 1056b may include a metal material rather than a magnetic material.
  • the first layer 1056a including a magnetic material may be disposed to contact the second conductivity-type semiconductor layer 1055 .
  • the first layer 1056a is disposed between the second layer 1056b and the second conductivity type semiconductor layer 1055 .
  • the second layer 1056b may be a contact metal connected to the second electrode of the wiring board.
  • the present invention is not necessarily limited thereto, and the magnetic material may be disposed on one surface of the first conductivity type semiconductor layer.
  • the self-assembly device includes a magnet handler that can be moved automatically or manually in the x, y, and z axes on the upper part of the fluid chamber, or the magnet 163 . It may be provided with a motor capable of rotating the. The magnet handler and the motor may constitute the position control unit 164 . Through this, the magnet 163 rotates in a horizontal direction, clockwise or counterclockwise direction with the substrate 161 .
  • a light-transmitting bottom plate 166 may be formed in the fluid chamber 162 , and the semiconductor light emitting devices may be disposed between the bottom plate 166 and the substrate 161 .
  • An image sensor 167 may be disposed to face the bottom plate 166 to monitor the inside of the fluid chamber 162 through the bottom plate 166 .
  • the image sensor 167 is controlled by the controller 172 and may include an inverted type lens and a CCD to observe the assembly surface of the substrate 161 .
  • the self-assembly apparatus described above is made to use a combination of a magnetic field and an electric field, and using this, the semiconductor light emitting devices are seated at a predetermined position on the substrate by an electric field in the process of moving by a change in the position of the magnet.
  • the assembly process using the self-assembly apparatus described above will be described in more detail.
  • a plurality of semiconductor light emitting devices 1050 including a magnetic material are formed through the process described with reference to FIGS. 5A to 5C .
  • a magnetic material may be deposited on the semiconductor light emitting device.
  • the substrate 161 is transferred to an assembly position, and the semiconductor light emitting devices 1050 are put into the fluid chamber 162 ( FIG. 8A ).
  • the assembly position of the substrate 161 will be a position in which the fluid chamber 162 is disposed such that the assembly surface of the substrate 161 on which the semiconductor light emitting devices 1050 are assembled faces downward.
  • some of the semiconductor light emitting devices 1050 may sink to the bottom of the fluid chamber 162 and some may float in the fluid.
  • some of the semiconductor light emitting devices 1050 may sink to the bottom plate 166 .
  • a magnetic force is applied to the semiconductor light emitting devices 1050 so that the semiconductor light emitting devices 1050 vertically float in the fluid chamber 162 ( FIG. 8B ).
  • the semiconductor light emitting devices 1050 float toward the substrate 161 in the fluid.
  • the original position may be a position deviated from the fluid chamber 162 .
  • the magnet 163 may be configured as an electromagnet. In this case, electricity is supplied to the electromagnet to generate an initial magnetic force.
  • the separation distance between the assembly surface of the substrate 161 and the semiconductor light emitting devices 1050 may be controlled.
  • the separation distance is controlled using the weight, buoyancy, and magnetic force of the semiconductor light emitting devices 1050 .
  • the separation distance may be several millimeters to several tens of micrometers from the outermost surface of the substrate.
  • a magnetic force is applied to the semiconductor light emitting devices 1050 so that the semiconductor light emitting devices 1050 move in one direction in the fluid chamber 162 .
  • the magnet 163 moves in a direction horizontal to the substrate, clockwise or counterclockwise ( FIG. 8C ).
  • the semiconductor light emitting devices 1050 move in a direction parallel to the substrate 161 at a position spaced apart from the substrate 161 by the magnetic force.
  • an electric field is generated by supplying power to the bi-planar electrode of the substrate 161 , and assembly is induced only at a preset position using this. That is, by using the selectively generated electric field, the semiconductor light emitting devices 1050 are self-assembled at the assembly position of the substrate 161 . To this end, cells in which the semiconductor light emitting devices 1050 are inserted may be provided on the substrate 161 .
  • the unloading process of the substrate 161 is performed, and the assembly process is completed.
  • the substrate 161 is an assembly substrate
  • a post-process for realizing a display device by transferring the semiconductor light emitting devices arranged as described above to a wiring board may be performed.
  • the magnet after guiding the semiconductor light emitting devices 1050 to the predetermined position, the magnet so that the semiconductor light emitting devices 1050 remaining in the fluid chamber 162 fall to the bottom of the fluid chamber 162 .
  • the 163 may be moved in a direction away from the substrate 161 ( FIG. 8D ).
  • the semiconductor light emitting devices 1050 remaining in the fluid chamber 162 fall to the bottom of the fluid chamber 162 .
  • the recovered semiconductor light emitting devices 1050 can be reused.
  • the self-assembly apparatus and method described above use a magnetic field to concentrate distant parts near a predetermined assembly site to increase the assembly yield in fluidic assembly, and apply a separate electric field to the assembly site so that the parts are selectively transferred only to the assembly site. to be assembled.
  • the assembly board is placed on the upper part of the water tank and the assembly surface is directed downward to minimize the effect of gravity due to the weight of the parts and prevent non-specific binding to eliminate defects. That is, to increase the transfer yield, the assembly substrate is placed on the upper part to minimize the effect of gravity or frictional force, and to prevent non-specific binding.
  • the present invention it is possible to pixelate a semiconductor light emitting device in a large amount on a small-sized wafer and then transfer it to a large-area substrate. Through this, it is possible to manufacture a large-area display device at a low cost.
  • the biggest problem is that the bending phenomenon of the substrate 161 appears in the center of the substrate 161 on which the semiconductor light emitting devices 1050 are seated. will be.
  • FIG. 10 is a diagram illustrating a bending phenomenon of a substrate that occurs during self-assembly.
  • the substrate 161 is bent toward the bottom surface of the assembly chamber 162 by gravity acting on the substrate 161 as shown in FIG. phenomenon appears large. This phenomenon appears larger as the area of the substrate 161 increases.
  • the warpage of the substrate 161 is a factor that hinders the self-assembly process.
  • a magnet 163 for applying a magnetic force to the semiconductor light emitting devices 1050 is disposed on the upper side of the substrate 161 . At this time, in order for the magnetic force formed by the magnet 163 to reach the semiconductor light emitting devices 1050 in the assembly chamber 162 with the substrate 161 interposed therebetween, the magnet 163 and the substrate 161 are This predetermined distance must be maintained.
  • the present invention relates to a self-assembly apparatus (hereinafter, self-assembly apparatus) of a semiconductor light emitting device that eliminates bending of a substrate and allows a magnet and a substrate to maintain a predetermined distance, and a self-assembly method using the same (hereinafter, self-assembly method) .
  • FIG. 11 is a conceptual diagram illustrating an embodiment of a self-assembly apparatus for a semiconductor light emitting device having a novel structure according to the present invention
  • FIG. 12 is a conceptual diagram illustrating an embodiment of the structure and operation of a magnetic force forming unit according to the present invention.
  • the self-assembly apparatus 1000 may include an assembly chamber 1100 , a magnetic chuck 1200 , a substrate chuck 1300 , and a controller (not shown).
  • the assembly chamber 1100 may include a space in which the fluid and the semiconductor light emitting devices 1050 are accommodated.
  • the assembly chamber 1100 may be in the form of a water tank with one side open, but is not limited thereto.
  • the fluid accommodated in the assembly chamber 1100 is an assembly solution, and may be water, preferably DI water (de-ionized water), but is not limited thereto.
  • the semiconductor light emitting device 1050 shown in FIG. 9 is accommodated in the assembly chamber 1100 in this specification and drawings, it is not limited thereto as long as it is a semiconductor light emitting device having a self-assembly structure.
  • the self-assembling structure may refer to a symmetrical structure or an asymmetrical structure having positional selectivity, but including a magnetic material to be induced by a magnetic force.
  • the assembly chamber 1100 is formed of a transparent material as a whole so that the inside can be seen from the outside, or at least the bottom surface 1110 is formed of a transparent material so that the assembly surface of the assembly substrate 2000 to be described later can be seen.
  • the assembly chamber 1100 may have an open upper side, and the assembly substrate 2000 may be disposed on the upper side of the assembly chamber 1100 .
  • the assembly substrate 2000 may include assembly electrodes for forming an electric field during self-assembly, and pocket-shaped cells on which the semiconductor light emitting devices 1050 are seated.
  • the semiconductor light emitting devices 1050 may be seated on a surface (hereinafter, referred to as an assembly surface) on which the components are formed through self-assembly, and the assembly substrate 2000 is assembled in a state in which the assembly surface faces the bottom surface of the assembly chamber 1100 . It may be arranged to be submerged in a fluid. Accordingly, when the bottom surface of the assembly chamber 1100 is formed of a transparent material, the assembly surface can be seen from the lower part of the assembly chamber 1100 .
  • the self-assembly apparatus 1000 may include a sensor unit 1400 disposed below the assembly chamber 1100 to monitor the inside of the assembly chamber 1100 .
  • the sensor unit 1400 is provided as an image sensor having an inverted type lens and a CCD, so that the assembly surface can be checked in real time through the bottom surface of the assembly chamber 1100 .
  • the assembly substrate 2000 may be transferred to the upper side of the assembly chamber 1100 by the substrate chuck 1300 and supported while self-assembly is in progress.
  • the substrate chuck 1300 may include a transfer unit and a support unit for this purpose.
  • the transfer unit may transfer the substrate chuck 1300 in horizontal and vertical directions, and the support unit may support an edge of the assembly substrate 2000 .
  • the support part may support two sides or all sides of the assembly substrate 2000 facing each other, and the supporting method may be various.
  • the substrate chuck 1300 may include a power applying unit (not shown) in addition to the above-described transfer unit and support unit.
  • the power applying unit is provided on the side of the support that supports the assembly substrate 2000 and may be connected to the assembly electrodes formed on the assembly substrate 2000, and applies power to the assembly electrodes during self-assembly to form an electric field on the assembly surface.
  • a magnetic chuck 1200 may be disposed above the assembly substrate 2000 . That is, the assembly substrate 2000 may be disposed between the assembly chamber 1100 and the magnet chuck 1200 .
  • the magnetic chuck 1200 may apply a magnetic force to induce movement of the semiconductor light emitting devices 1050 in the assembly chamber 1100 while moving in a horizontal direction.
  • the magnetic chuck 1200 may include a plurality of magnets and a transfer unit.
  • the transfer unit may transfer the magnetic chuck 1200 in horizontal and vertical directions.
  • the vertical transfer of the magnetic chuck 1200 is for adjusting the distance between the assembly substrate 2000 and the plurality of magnets, and the horizontal transfer of the magnetic chuck 1200 causes semiconductor light to be emitted over the entire area of the assembly substrate 2000 . It may be for self-assembly of the elements 1050 .
  • the horizontal direction herein may mean a direction parallel to the assembly surface of the assembly substrate 2000 .
  • control unit may be a known configuration provided to control the driving of the device, and detailed description of the control unit will be omitted herein.
  • the magnetic chuck 1200 constituting the self-assembly apparatus 1000 of the present invention will be described in detail with reference to FIGS. 11 and 12 .
  • the magnetic chuck 1200 may include a magnetic force forming unit 1210 and a vacuum forming unit 1220 .
  • the magnetic force forming unit 1210 may be configured to apply a magnetic force to the semiconductor light emitting devices 1050
  • the vacuum forming unit 1220 may be configured to correct warpage of the assembly substrate 2000 .
  • the magnetic force forming unit 1210 may include a plurality of magnets arranged in a plurality of rows and columns.
  • the plurality of magnets may be an assembly magnet 1212 , a first cushion magnet 1213 , and a second cushion magnet 1214 .
  • the magnetic force forming unit 1210 may include a magnet receiving unit 1211 arranged in a plurality of rows and columns.
  • the magnet accommodating part 1211 may have a space of a predetermined width and depth so that some of the plurality of magnets may be accommodated.
  • the magnet accommodating part 1211 may include an opening 1211a in a portion adjacent to the assembly substrate 2000 .
  • An assembly magnet 1212 for applying a magnetic force to the semiconductor light emitting devices 1050 during self-assembly may be disposed in the magnet accommodating part 1211 .
  • the width (or diameter) of the assembly magnet 1212 may be formed to be smaller than the width of the space provided in the magnet accommodating part 1211 so that the assembly magnet 1212 may be disposed in the magnet accommodating part 1211 .
  • the length of the assembly magnet 1212 is formed to be longer than the depth of the space provided in the magnet accommodating part 1211 , so that a part of the assembly magnet 1212 may be exposed through the opening 1211a.
  • the gap between the magnet chuck 1200 and the assembly substrate 2000 is exposed through the opening 1211a, so that one surface of the assembly magnet 1212 closest to the assembly substrate 2000 and the assembly substrate 2000 are exposed.
  • ) can mean the interval between
  • the gap between one surface of the assembling magnet 1212 and the assembling substrate 2000 is It should be kept within a certain range.
  • one surface of the assembly magnet 1212 and the assembly substrate 2000 may be disposed with an interval of 2 mm or less.
  • the assembly magnet 1212 may move up and down in the magnet accommodating part 1211 along the longitudinal direction of the assembly magnet 1212 during self-assembly, and may be separated from the magnet chuck 1200 after self-assembly. That is, the assembly magnet 1212 may be detachably provided from the magnet chuck 1200 .
  • the magnetic chuck 1200 may include first and second cushion magnets 1213 and 1214 to adjust the vertical movement of the assembly magnet 1212 .
  • the first and second cushion magnets 1213 and 1214 are provided in a fixed state to the magnet chuck 1200, and the assembled magnet 1212 and the assembled magnet 1212 are spaced apart from each other by applying attractive or repulsive force to the assembled magnet ( 1212) can be adjusted in the vertical direction.
  • the first and second cushion magnets 1213 and 1214 are not directly involved in the self-assembly of the semiconductor light emitting device 1050, but serve to finely adjust the vertical position of the assembly magnet 1212, so the assembly magnet ( 1212) may be provided with a smaller size magnet.
  • the first cushion magnet 1213 may be disposed on the outside of the magnet accommodating part 1211
  • the second cushion magnet 1214 may be disposed to be fixed to one surface in the magnet accommodating part 1211 . That is, the plurality of magnets may be arranged such that the centers of the magnets are arranged on the same line in the order of the first cushion magnet 1213 , the second cushion magnet 1214 , and the assembly magnet 1212 . At this time, the line on which the centers of the magnets are arranged may be the axis of vertical movement of the assembly magnet 1212 .
  • the assembly magnet 1212 may move in the vertical direction by the action of the first and second cushion magnets 1213 and 1214.
  • the plurality of magnets have a repulsive force between the first cushion magnet 1213 and the second cushion magnet 1214, and , the second cushion magnet 1214 and the assembly magnet 1212 may be disposed to act so that an attractive force acts.
  • the repulsive force directly acts between the first cushion magnet 1213 and the assembly magnet 1212, the position of the assembly magnet 1212 is not fixed, so the second cushion magnet 1214 is the first cushion magnet 1213 ) and the assembled magnet 1212 may serve as an intermediate layer.
  • the assembly magnet 1212 may be positioned in a vertical direction in a state in which it is coupled or not coupled to the second cushion magnet 1214 .
  • the length of the portion exposed through the opening 1211a of the assembly magnet 1212 may be adjusted as the vertical position is adjusted.
  • the vacuum forming unit 1220 may include a plurality of vacuum holes 1221 provided between the plurality of magnets.
  • the vacuum holes 1221 may be provided in the form of a hole between the plurality of magnets or may be provided in the form of a line.
  • One side of the vacuum holes 1221 may be connected to a vacuum pump (not shown), and a vacuum pressure may be applied to the assembly substrate 2000 through the other side of the vacuum holes 1221 .
  • a vacuum pad may be provided at the other side of the vacuum holes 1221 , and in this case, the assembly substrate 2000 may be adsorbed to the vacuum pad.
  • the magnetic chuck 1200 is a bending of the assembly substrate 2000 by applying vacuum pressure to the assembly substrate 2000 in a region other than the region to which the magnetic force is applied while self-assembly in which the magnetic force is applied to the semiconductor light emitting devices 1050 is in progress.
  • the phenomenon may be corrected, and accordingly, a distance between the assembly magnets 1212 and the assembly substrate 2000 may be constantly maintained.
  • FIG. 13 is a flow chart showing a self-assembly method according to the present invention
  • Figure 14 is a conceptual diagram for explaining the horizontal movement of the magnetic chuck in the self-assembly method according to the present invention
  • Figure 15 is a magnet assembled in the self-assembly method according to the present invention It is a conceptual diagram for explaining the vertical movement of
  • the step ( S100 ) of supplying the semiconductor light emitting devices 1050 in the assembly chamber 1100 containing the fluid may be performed.
  • Descriptions of the fluid supplied into the assembly chamber 1100 and the semiconductor light emitting devices 1050 are the same as described above.
  • the semiconductor light emitting device 1050 may be supplied.
  • the semiconductor light emitting devices 1050 may be supplied in a uniform amount within a predetermined error range for each of a plurality of preset positions in the assembly chamber 1100 , and may be continuously supplied along a direction in which preset positions are arranged.
  • the plurality of preset positions may be positions corresponding to cells of the assembly substrate 2000 .
  • the assembly substrate 2000 may be disposed above the assembly chamber 1100 by the substrate chuck 1300 .
  • the assembly substrate 2000 includes cells on which assembly electrodes and semiconductor light emitting devices 1050 are mounted, and the surface on which assembly electrodes and cells are formed on the assembly substrate 2000 corresponds to the assembly surface.
  • the assembly substrate 2000 may be disposed to be immersed in the fluid while the assembly surface faces the bottom surface of the assembly chamber 1100 .
  • the assembly substrate 2000 is supported on the substrate chuck 1300 in a state in which the assembly surface faces upward, and the assembly substrate 2000 is assembled by rotating the substrate chuck 1300 by 180 degrees. After the surface is placed in a downward-facing state, the assembly substrate 2000 may be disposed above the assembly chamber 1100 in that state. Also, when the assembly substrate 2000 is disposed above the assembly chamber 1100 , the assembly substrate 2000 may be moved downward until the assembly surface is immersed in the fluid. Meanwhile, in the assembly substrate 2000 , a portion not supported by the substrate chuck 1300 due to gravity in a state in which the assembly surface is immersed in the fluid, particularly, the central portion may be bent toward the bottom surface of the assembly chamber 1100 . .
  • a step ( S300 ) of disposing the magnetic chuck 1200 on the upper side of the assembly substrate 2000 may be performed.
  • the magnetic chuck 1200 may correct warpage of the assembly substrate 2000 while applying a magnetic force to the semiconductor light emitting devices 1050 in the assembly chamber 1100 .
  • the magnetic chuck 1200 may be disposed to have a gap within a predetermined range from the assembly substrate 2000 so that the magnetic force formed by the assembly magnet 1212 may affect the semiconductor light emitting devices 1050 .
  • the magnet chuck 1200 may be disposed such that one surface of the assembly magnet 1212 has a gap of 2 mm or less from the assembly substrate 2000 .
  • the process of applying a magnetic force to the semiconductor light emitting devices 1050 to induce movement of the semiconductor light emitting devices 1050 may be performed while the assembly magnet 1212 is in contact with the assembly substrate 2000 , but the assembly magnet Even if the 1212 does not come into contact with the assembly substrate 2000 , in order for the magnetic force to be applied to the semiconductor light emitting devices 1050 , the distance between one surface of the assembly magnet 1212 and the assembly substrate 2000 should be maintained within 2 mm.
  • the magnetic chuck 1200 when the magnetic chuck 1200 is disposed on the upper side of the assembly substrate 2000 , the magnetic chuck 1200 applies vacuum pressure to the assembly substrate 2000 through the vacuum holes 1221 to cause bending of the assembly substrate 2000 . can be corrected, and through this, the distance between the entire area of the assembling substrate 2000 and the assembling magnet 1212 may be within 2 mm. In addition, the magnetic chuck 1200 continuously applies vacuum pressure to the assembly substrate 2000 until the self-assembly process to be described later is finished, and through this, the gap between the assembly substrate 2000 and the assembly magnet 1212 is maintained. can
  • a step ( S400 ) of seating the semiconductor light emitting devices 1050 on the assembly substrate 2000 by using a magnetic field and an electric field may be performed.
  • the corresponding step may be a step corresponding to the self-assembly described in this specification.
  • the magnetic chuck 1200 may move further downward so that the assembly magnet 1212 comes into contact with the assembly substrate 2000 .
  • some assembly magnets 1212 for example, assembly magnets 1212 disposed on the edge region of the assembly substrate 2000 are first assembled on the assembly substrate.
  • the assembly magnets 1212 disposed on the upper portion of the central region of the assembly substrate 2000 have a vertical position by the action of the first and second cushion magnets 1213 and 1214. It may be in contact with the assembly substrate 2000 while being controlled.
  • the controller may control the vertical position of the assembly magnets 1212 to apply uniform pressure to the assembly substrate 2000 while the assembly magnets 1212 are in contact with the assembly substrate 2000 .
  • FIG. 15 is for explaining a process of adjusting the vertical position of the assembled magnets 1212, and although not shown in the drawings, the curved shape of the substrate can be corrected by the vacuum forming unit 1220 as described above. there is.
  • a step of moving the magnet chuck 1200 in a horizontal direction may be performed.
  • movement in the horizontal direction may be induced.
  • the magnetic chuck 1200 may be self-assembled for the entire area of the assembly substrate 2000 by moving in the horizontal direction as shown in FIG. 14 .
  • at least some of the assembly magnets 1212 move further in the vertical direction, so that the distance from the assembly substrate 2000 and the pressure applied to the assembly substrate 2000 while in contact with the assembly substrate 2000 are adjusted.
  • a step of applying power to some of the assembly electrodes may be performed in order to seat the semiconductor light emitting devices 1050 , which are guided toward the assembly surface by magnetic force and move horizontally, in the cell.
  • an electric field is formed in a corresponding region, and the semiconductor light emitting devices 1050 may be seated in a cell by dielectrophoresis.
  • power may be applied to at least some of the assembly electrodes overlapped with the assembly magnet 1212 among the assembly electrodes, and power is simultaneously applied or sequentially applied to all of the assembly electrodes overlapped with the assembly magnet 1212 power can be applied.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

Un dispositif d'auto-assemblage de diode électroluminescente à semi-conducteur selon la présente invention comprend : une chambre d'assemblage dans laquelle des diodes électroluminescentes de fluide et de semi-conducteur sont reçues ; un mandrin magnétique disposé au-dessus de la chambre d'assemblage et appliquant, tout en se déplaçant dans une direction horizontale, une force magnétique de manière à induire un mouvement des diodes électroluminescentes à semi-conducteur dans la chambre d'assemblage ; un mandrin de substrat pour placer un substrat d'assemblage, sur lequel les diodes électroluminescentes à semi-conducteur dans la chambre d'assemblage sont placées, entre la chambre d'assemblage et le mandrin magnétique et supportant le substrat d'assemblage ; et une partie de commande pour commander l'entraînement du mandrin magnétique et du mandrin de substrat, le mandrin magnétique comprenant : une partie de formation de force magnétique comprenant une pluralité d'aimants ; et une partie de formation de vide pour corriger un phénomène de flexion du substrat d'assemblage en utilisant une pression de vide entre la pluralité d'aimants de manière à maintenir un intervalle prédéterminé entre un côté du mandrin magnétique et le substrat d'assemblage.
PCT/KR2020/013298 2020-09-29 2020-09-29 Appareil et procédé pour auto-assemblage de diodes électroluminescentes à semi-conducteur WO2022071613A1 (fr)

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KR1020237004650A KR20230038739A (ko) 2020-09-29 2020-09-29 반도체 발광소자의 자가조립 장치 및 방법
PCT/KR2020/013298 WO2022071613A1 (fr) 2020-09-29 2020-09-29 Appareil et procédé pour auto-assemblage de diodes électroluminescentes à semi-conducteur
US18/024,371 US20230317491A1 (en) 2020-09-29 2020-09-29 Apparatus and method for self-assembling semiconductor light emitting diodes

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CN117334797B (zh) * 2023-11-22 2024-03-01 北京海炬电子科技有限公司 一种流磁自组装巨量转移装置及转移方法

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KR20190017691A (ko) * 2017-08-10 2019-02-20 고려대학교 산학협력단 발광소자와 기판 및 그 정렬방법과 정렬장치
US20190058080A1 (en) * 2017-08-18 2019-02-21 Khaled Ahmed Micro light-emitting diode (led) display and fluidic self-assembly of same
KR20190122113A (ko) * 2018-04-19 2019-10-29 엘지전자 주식회사 반도체 발광소자의 자가조립 장치 및 방법
KR20200026765A (ko) * 2019-09-27 2020-03-11 엘지전자 주식회사 반도체 발광소자의 자가조립 장치
KR102145016B1 (ko) * 2019-02-28 2020-08-18 엘지전자 주식회사 반도체 발광 소자를 디스플레이 패널에 조립하는 조립 장치

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KR20190017691A (ko) * 2017-08-10 2019-02-20 고려대학교 산학협력단 발광소자와 기판 및 그 정렬방법과 정렬장치
US20190058080A1 (en) * 2017-08-18 2019-02-21 Khaled Ahmed Micro light-emitting diode (led) display and fluidic self-assembly of same
KR20190122113A (ko) * 2018-04-19 2019-10-29 엘지전자 주식회사 반도체 발광소자의 자가조립 장치 및 방법
KR102145016B1 (ko) * 2019-02-28 2020-08-18 엘지전자 주식회사 반도체 발광 소자를 디스플레이 패널에 조립하는 조립 장치
KR20200026765A (ko) * 2019-09-27 2020-03-11 엘지전자 주식회사 반도체 발광소자의 자가조립 장치

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