WO2022061746A1 - 巴伦组件、微波射频器件及天线 - Google Patents

巴伦组件、微波射频器件及天线 Download PDF

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Publication number
WO2022061746A1
WO2022061746A1 PCT/CN2020/117852 CN2020117852W WO2022061746A1 WO 2022061746 A1 WO2022061746 A1 WO 2022061746A1 CN 2020117852 W CN2020117852 W CN 2020117852W WO 2022061746 A1 WO2022061746 A1 WO 2022061746A1
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WIPO (PCT)
Prior art keywords
electrode
transmission electrode
substrate
intersection
transmission
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PCT/CN2020/117852
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English (en)
French (fr)
Inventor
贾皓程
丁天伦
王瑛
武杰
李亮
唐粹伟
李强强
张玮
车春城
Original Assignee
京东方科技集团股份有限公司
北京京东方传感技术有限公司
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Application filed by 京东方科技集团股份有限公司, 北京京东方传感技术有限公司 filed Critical 京东方科技集团股份有限公司
Priority to CN202080002116.2A priority Critical patent/CN115336100B/zh
Priority to US17/309,929 priority patent/US11843154B2/en
Priority to PCT/CN2020/117852 priority patent/WO2022061746A1/zh
Publication of WO2022061746A1 publication Critical patent/WO2022061746A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/08—Microstrips; Strip lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices

Definitions

  • the invention belongs to the technical field of communication, and in particular relates to a balun assembly, a microwave radio frequency device and an antenna.
  • Balun (BALUN: balun-unbalance) component is a three-port device, which can be applied to microwave radio frequency devices.
  • the balun component is a radio frequency transmission line transformer that converts the matching input into a differential input.
  • the two outputs of the balun component are equal in amplitude and opposite in phase. In the frequency domain, this means that there is a 180° phase difference between the two outputs; in the time domain, this means that the voltage of one balanced output is the negative of the other balanced output.
  • the present invention aims to solve at least one of the technical problems existing in the prior art, and provides a balun assembly, a microwave radio frequency device and an antenna.
  • balun assembly which includes:
  • first substrate having oppositely disposed first and second surfaces
  • a first transmission electrode disposed on the first surface of the first substrate
  • ground electrode which is provided with an opening, and the ground electrode is arranged on the side of the first substrate away from the first transmission electrode;
  • a first dielectric layer disposed on the side of the ground electrode away from the first substrate
  • the second transmission electrode and the third transmission electrode are both arranged on the side of the first dielectric layer away from the ground electrode, and the second transmission electrode and the third transmission electrode are arranged at intervals;
  • the orthographic projections of the first transmission electrode, the second transmission electrode and the third transmission electrode on the first substrate all overlap with the orthographic projection of the opening on the first substrate, and the The intersection of the orthographic projection of the first transmission electrode, the second transmission electrode and the third transmission electrode on the first substrate and the orthographic projection of the opening on the substrate are the first intersection, the second intersection, A third point of intersection; the first point of intersection is located between the second point of intersection and the third point of intersection.
  • the first transmission electrode has a first signal terminal and a first open-circuit terminal arranged oppositely;
  • the second transmission electrode has a second signal terminal and a second open-circuit terminal arranged oppositely;
  • the length of the line from the first open end of the first transmission electrode to the first intersection is L1
  • the length of the line from the second open end of the second transmission electrode to the second intersection is L2
  • the line length from the third open end of the third transmission electrode to the third intersection is L3; L1, L2, and L3 are all approximately equal to 1/4 of the medium wavelength.
  • the orthographic projection of the second open end and the third open end on the first substrate is located on the same side of the opening; and the second intersection of the second transmission electrode reaches the second
  • the line length of the signal end is L4
  • the line length from the third intersection of the third transmission electrode to the third signal end is L5
  • the difference between L5 and L4 is 1/2 the medium wavelength.
  • the third intersection point of the third transmission electrode to the third signal end includes a meandering line.
  • the orthographic projection of the first transmission electrode, the second transmission electrode, and the third transmission electrode on the first substrate is overlapping.
  • the second open-circuit end and the third open-circuit end are respectively disposed on both sides of the opening on the orthographic projection of the first substrate; and the second intersection of the second transmission electrode reaches the third
  • the line length of the two signal terminals is L4
  • the line length from the third intersection point of the third transmission electrode to the third signal terminal is L5, and L4 and L5 are approximately equal.
  • the first transmission electrode, the second transmission electrode, and the third transmission electrode all include meandering lines.
  • a second substrate opposite to the first dielectric layer is also provided on the side of the first dielectric layer facing away from the ground electrode; the second transmission electrode and the third transmission electrode are both disposed on the On the first dielectric layer, a second dielectric layer is disposed between the layer where the second transmission electrode and the third transmission electrode are located and the second substrate.
  • a second substrate opposite to the first dielectric layer is further provided on the side of the first dielectric layer facing away from the ground electrode;
  • One of the second transfer electrode and the third transfer electrode is disposed on the first dielectric layer, and the other is disposed on the side of the second substrate close to the first dielectric layer; or, the Both the second transfer electrode and the third transfer electrode are disposed on the side of the second substrate close to the first dielectric layer;
  • a second dielectric layer is disposed between the layer where the second transmission electrode is located and the layer where the third transmission electrode is located.
  • the second dielectric layer includes a liquid crystal layer.
  • the width of the extending direction of the opening is between 1/4 medium wavelength to 1/2 medium wavelength.
  • an embodiment of the present disclosure provides a microwave radio frequency device, which includes the above-mentioned balun assembly.
  • the microwave radio frequency device includes a phase shifter or a filter.
  • an embodiment of the present disclosure provides an antenna, which includes the above-mentioned microwave radio frequency device.
  • FIG. 1 is a schematic diagram of an exemplary phase shifting structure.
  • FIG. 2 is a schematic diagram of a forward coupled balun assembly according to an embodiment of the disclosure.
  • FIG. 3 is a schematic diagram of an inversely coupled balun structure according to an embodiment of the disclosure.
  • FIG. 4 is a schematic structural diagram of a balun assembly in an embodiment of the disclosure.
  • FIG. 5 is a schematic structural diagram of another balun assembly in an embodiment of the disclosure.
  • Balun (BALUN: balun-unbalance) component is a three-port device, which can be applied to microwave radio frequency devices.
  • the balun component is a radio frequency transmission line transformer that converts the matching input into a differential input.
  • the two outputs of the balun component are equal in amplitude and opposite in phase. In the frequency domain, this means that there is a 180° phase difference between the two outputs; in the time domain, this means that the voltage of one balanced output is the negative of the other balanced output.
  • the microwave radio frequency device is used as a phase shifter as an example for description, but it should be understood that the microwave radio frequency device being a phase shifter does not constitute a limitation on the embodiments of the present disclosure.
  • the phase shifter includes not only a balun component, but also a phase shifting structure;
  • FIG. 1 is a schematic diagram of an exemplary phase shifting structure; as shown in FIG. A base substrate 10 and a second base substrate 20, the first transmission line 1 is disposed on the side of the first base substrate 10 close to the second base substrate 20, and the second base substrate 20 is disposed close to the first base substrate
  • the second transmission line 2 on one side of 10, the dielectric layer disposed between the layer where the first transmission line 1 is located and the layer where the second transmission line 2 is located, and the ground electrode 4; wherein, the dielectric layer includes but is not limited to the liquid crystal layer 3, in the following
  • the medium layer is the liquid crystal layer 3 as an example for description.
  • the first transmission line 1 and the second transmission line 2 include but are not limited to microstrip lines, and the ground electrode 4 may be disposed on the side of the first base substrate 10 away from the first transmission line 1 .
  • the first transmission line 1 and the second transmission line 2 can use comb-shaped electrodes, and the ground electrode 4 can use plane electrodes, that is, the first transmission line 1, the second transmission line 2 and the ground electrode 4 form a microstrip line transmission structure;
  • the first transmission line 1 , the second transmission line 2 and the ground electrode 4 may also constitute any one of a stripline transmission structure, a co-surface waveguide transmission structure, and a substrate-integrated waveguide transmission structure, which will not be listed here.
  • the balun structure when the microwave signal is input to the phase shifter through the balun structure, the balun structure usually adopts the method of welding (direct) feeding, and for this method, there are two kinds of coating on the thick copper wire (transmission line).
  • the mechanism of sealing the sealant 1
  • the straight-through balun structure needs to be separated by the sealant between the output end of the balun and the phase-shifting section of the phase shifter; 2
  • the welded transmission line needs to extend through the sealant to the edge of the pad; the liquid crystal shifts
  • problems such as glue breakage, box thickness uniformity, and liquid leakage may be introduced.
  • an embodiment of the present disclosure provides a balun assembly, which includes: a first substrate 100 , a first dielectric layer 300 , a first transfer electrode 11 , a second transfer electrode 21 , a third transfer electrode 22 , and a ground electrode 12 ; wherein, the first substrate 100 has a first surface and a second surface oppositely arranged; the first transmission electrode 11 is arranged on the first surface of the first substrate 100; the ground electrode 12 has an opening 121, which is arranged on the first substrate 100 on the side away from the first surface; the first dielectric layer 300 is disposed on the side of the ground electrode 12 away from the first substrate 100; the second transfer electrode 21 and the third transfer electrode 22 are disposed on the first dielectric layer 300 away from the ground electrode 12 side.
  • the orthographic projections of the first transfer electrode 11 , the second transfer electrode 21 and the third transfer electrode 22 on the first substrate 100 all overlap with the orthographic projection of the opening 121 on the first substrate 100 , and the first transfer electrode 11 , the The intersection of the orthographic projection of the second transmission electrode 21 and the third transmission electrode 22 on the first substrate 100 and the orthographic projection of the opening 121 on the substrate are the first intersection point N1, the second intersection point N2, and the third intersection point N3; An intersection N1 is located between the second intersection N2 and the third intersection N3.
  • intersection point refers to the area of intersection between the two, and the area may be a point or may have a certain area, such as the area of the opening 121 of the first transmission electrode 11 .
  • the first intersection point N1 is a rectangular area with a certain area.
  • the ground electrode 12 is provided between the first substrate where the first transfer electrode 11 is located and the first dielectric layer 300 where the second transfer electrode 21 and the third transfer electrode 22 are located, and the ground electrode 12 There is an opening 121 thereon, and the intersection of the orthographic projection of the first transfer electrode 11, the second transfer electrode 21 and the third transfer electrode 22 on the first substrate 100 and the orthographic projection of the opening 121 on the substrate are the first intersection N1, Two intersection points N2 and third intersection points N3; the first intersection point N1 is located between the second intersection point N2 and the third intersection point N3, so that, through electromagnetic coupling, the transmission on the first transmission electrode 11
  • the microwave signal passed through the opening 121 on the ground electrode 12 is coupled to the second transmission electrode 21 and the third transmission electrode 22 respectively, so as to transmit the microwave signal.
  • the balun structure provided by the embodiment of the present disclosure transmits the microwave signal in a coupling manner through the first transmission electrode 11 , the second transmission electrode 21 and the third transmission electrode 22 , which is compared with the welding connection in the related art.
  • the feeding efficiency of the balun structure in the embodiment of the present disclosure is higher, the reflection bandwidth can reach about 15%, and a phase difference of 180° can be realized.
  • FIG. 2 is a schematic diagram of a forward coupled balun assembly according to an embodiment of the disclosure.
  • the first transmission electrode 11 , the second transmission electrode 21 , and the third transmission electrode 22 are in the first
  • the orthographic projections on the substrate 100 do not overlap, and the orthographic projections of the first transfer electrode 11 , the second transfer electrode 21 and the third transfer electrode 22 on the first substrate 100 are orthogonal to the orthographic projection of the opening 121 on the substrate, and the intersection points are respectively are the first intersection point N1, the second intersection point N2, and the third intersection point N3;
  • the orthographic projections of the second open end c2 of the second transmission electrode 21 and the third open end c3 of the third transmission electrode 22 on the first substrate 100 are located in the opening 121 on the same side.
  • the first transmission electrode 11 has a first signal terminal a and a first open-circuit terminal c1 arranged oppositely;
  • the second transmission electrode 21 has a second signal terminal b1 and a second open-circuit terminal c2 arranged oppositely;
  • the third transmission electrode 22 has The third signal end b2 and the third open end c3 are arranged oppositely;
  • the line length from the first open end c1 of the first transmission electrode 11 to the first intersection N1 is L1
  • the second open end c2 of the second transmission electrode 21 The length of the line to the second intersection N2 is L2,
  • the length of the line from the third open end c3 of the third transfer electrode 22 to the third intersection N3 is L3, and the distance between the second signal end b1 of the second transfer electrode 21 and the second intersection N2 is L3.
  • the line length between them is L4, the line length between the third signal end b2 of the third transmission electrode 22 and the third intersection N3 is L4; the impedance of the first transmission electrode 11 is Z1, the second transmission electrode 21 and the third transmission
  • the parallel impedance of the electrode 22 is Z2; in order to realize that the two signals output by the second transmission electrode 21 and the third transmission electrode 22 are equal in amplitude and opposite in phase, the opening 121 on the ground electrode 12 is connected to the second transmission electrode 21 and the third transmission electrode 21.
  • the side length W of the orthogonal side of the electrode 22 is between 1/4 medium wavelength to 1/2 medium wavelength; L1, L2, L3 are all approximately equal to 1/4 medium wavelength, and L4 and L5 differ by 1/2 medium wavelength wavelength, where N1 is equal to the distance between N2 and N3.
  • the L5 is longer than L4 by 1/2 the medium wavelength as an example for description.
  • the medium wavelength refers to the wavelength of the electromagnetic wave in the medium, which is related to the dielectric constant; L1, L2, and L3 are all approximately equal to 1/4 of the medium wavelength, which means that L1, L2, and L3 are all equal to 1/4
  • the medium wavelength, or L1, L2, and L3 are all equal to 1/4 of the medium wavelength plus or minus an error value, which can be specifically defined according to the accuracy requirements of the balun assembly.
  • the third intersection point N3 of the third transfer electrode 22 to the third signal end b2 includes a meandering line.
  • the meandering line may specifically adopt any one of an arcuate shape, a wavy shape, and a zigzag shape.
  • the meandering line is not limited to these structures, and the structure of the meandering line can be specifically designed according to the impedance requirements of the balun assembly.
  • FIG. 3 is a schematic diagram of an inversely coupled balun structure according to an embodiment of the present disclosure.
  • the first transmission electrode 11 , the second transmission electrode 21 , and the third transmission electrode 22 all use Meandering line, the orthographic projections of the second transfer electrode 21 and the third transfer electrode 22 on the first substrate 100 do not overlap, and the first transfer electrode 11 , the second transfer electrode 21 and the third transfer electrode 22 are on the first substrate 100
  • the orthographic projection on it is orthogonal to the orthographic projection of the length direction of the opening 121 on the substrate, and the intersection points are the first intersection point N1, the second intersection point N2, and the third intersection point N3;
  • the orthographic projections of the third open ends c3 of the three transfer electrodes 22 on the first substrate 100 are located on different sides of the opening 121 .
  • the first transmission electrode 11 has a first signal terminal a and a first open-circuit terminal c1 arranged oppositely;
  • the second transmission electrode 21 has a second signal terminal b1 and a second open-circuit terminal c2 arranged oppositely;
  • the third transmission electrode 22 has a The third signal end b2 and the third open end c3 are arranged oppositely;
  • the line length from the first open end c1 of the first transmission electrode 11 to the first intersection N1 is L1
  • the second open end c2 of the second transmission electrode 21 The length of the line to the second intersection N2 is L2, the length of the line from the third open end c3 of the third transfer electrode 22 to the third intersection N3 is L3, and the distance between the second signal end b1 of the second transfer electrode 21 and the second intersection N2 is L3.
  • the line length between them is L4, the line length between the third signal end b2 of the third transmission electrode 22 and the third intersection N3 is L4; the impedance of the first transmission electrode 11 is Z1, the second transmission electrode 21 and the third transmission
  • the parallel impedance of the electrode 22 is Z2; in order to realize that the two signals output by the second transmission electrode 21 and the third transmission electrode 22 are equal in amplitude and opposite in phase, the opening 121 on the ground electrode 12 is connected to the second transmission electrode 21 and the third transmission electrode 21.
  • the side length W of the orthogonal side of the electrode 22 is between 1/4 medium wavelength to 1/2 medium wavelength; L1, L2, L3 are all approximately equal to 1/4 medium wavelength, L4 and L5 are equal; wherein, N1 to N2 and the distance between N3 is equal. .
  • L1, L2, and L3 are all approximately equal to 1/4 of the medium wavelength, which means that L1, L2, and L3 are all equal to 1/4 of the medium wavelength, or L1, L2, and L3 are all equal to 1/4 of the medium wavelength plus Or minus an error value, which can be specifically limited according to the accuracy requirements of the balun assembly.
  • the impedance Z1 of the first transmission electrode 11 is slightly larger than that of the second transmission electrode 21 and the third The parallel impedance Z2 of the transmission electrode 22 is used to achieve better power distribution; if the difference between the distance between the first intersection point N1 and the second intersection point N2 and the distance between the first intersection point N1 and the third intersection point N3 is smaller, then It is required that the larger the difference between the impedance Z1 of the first transmission electrode 11 and the parallel impedance Z2 of the second transmission electrode 21 and the third transmission electrode 22 is, so as to realize equal power distribution.
  • the meandering line may specifically adopt any one of an arcuate shape, a wavy shape, and a zigzag shape.
  • the meandering line is not limited to these structures, and the structure of the meandering line can be specifically designed according to the impedance requirements of the balun assembly. Since in the embodiment of the present disclosure, the balun assembly is reversely coupled, and the first transmission electrode 11 , the second transmission electrode 21 , and the third transmission electrode 22 all use meandering lines, so the size of the balun assembly can be reduced.
  • balun assembly structure in which the orthographic projection on the first substrate 100 is located on different sides of the opening 121 is within the protection scope of the embodiments of the present disclosure.
  • the second transmission electrode 21 and the third transmission electrode 22 may be arranged in the same layer or layered.
  • the specific structures of the second transfer electrode 21 and the third transfer electrode 22 arranged in the same layer and layered are described below.
  • FIG. 4 is a schematic structural diagram of a balun assembly according to an embodiment of the disclosure.
  • the output signal line, the first substrate 100 , the ground electrode 12 , the first dielectric layer 300 , the second The transmission electrode 21 , the second dielectric layer, the third transmission electrode 22 , and the second substrate 200 are arranged in two layers, and a second dielectric layer is sandwiched between the two layers.
  • the second dielectric layer includes but is not limited to a liquid crystal layer (not shown in the figure).
  • the first dielectric layer 300 is separated from the ground electrode 12 .
  • the first dielectric layer 300 may be in contact with the ground electrode 12 .
  • the ground electrode 12 may be formed on the side of the first dielectric layer away from the second substrate 200 .
  • the first dielectric layer 300 may be integrated with the first base substrate 10 in the phase shifting structure
  • the second base 200 may be integrated with the first substrate 10 in the phase shift structure.
  • the two-substrate base is a first integrated structure
  • the liquid crystal layer 3 in the balun assembly and the liquid crystal layer 3 in the phase-shifting structure are a one-layer structure.
  • the second transmission electrode 21 and the first transmission line 1 have an integrated structure
  • the third transmission electrode 22 and the second transmission line 2 have an integrated structure
  • the ground electrode 4 and the ground electrode 12 may have an integrated structure. In this way, the manufacturing cost of the phase shifter will not be increased.
  • FIG. 5 is a schematic structural diagram of another balun assembly in the embodiment of the present disclosure.
  • the balun assembly of this structure is different from the balun assembly shown in FIG. 4 only in that the second transmission electrode 21 and The third transfer electrodes 22 are all disposed on the first dielectric layer 300 , and the rest of the structure is the same as the structure of the balun assembly in FIG. 4 , so it is not repeated here.
  • the second transfer electrode 21 and the third transfer electrode 22 may also be disposed on the side of the second substrate 200 away from the first dielectric layer 300 .
  • the first dielectric layer 300 is separated from the ground electrode 12 .
  • the first dielectric layer 300 may be in contact with the ground electrode 12 .
  • the ground electrode 12 may be formed on one side of the second substrate 200 based on the principle of the first dielectric layer.
  • the shapes of the second transfer electrode 21 and the third transfer electrode 22 in FIG. 4 and FIG. 5 are only schematic representations, and do not represent the actual shapes of the second transfer electrode 21 and the third transfer electrode 22 .
  • the first transmission electrode 11 , the second transmission electrode 21 and the third transmission electrode 22 all include microstrip lines; the ground electrode 12 includes the ground electrode 4 .
  • the materials of the first transmission electrode 11 , the second transmission electrode 21 , the third transmission electrode 22 , and the ground electrode 12 can be made of metals such as copper, aluminum, silver, gold, chromium, molybdenum, nickel, or iron.
  • the opening 121 on the ground electrode 12 is rectangular.
  • the shape of the opening 121 on the ground electrode 12 may be any shape, which is not limited in the embodiments of the present disclosure.
  • the first dielectric layer 300 , the first substrate 100 and the second substrate 200 may use a glass substrate with a thickness of 100-1000 microns, a sapphire substrate, or a thickness of 10-500 microns.
  • the first dielectric layer 300 , the first substrate 100 and the second substrate 200 can be made of high-purity quartz glass with extremely low dielectric loss. Compared with ordinary glass substrates, the use of quartz glass for the first dielectric layer 300 , the first substrate 100 and the second substrate 200 can effectively reduce the loss of microwaves, so that the phase shifter has low power consumption and high signal-to-noise ratio.
  • the liquid crystal molecules in the liquid crystal layer 3 are positive liquid crystal molecules or negative liquid crystal molecules. It should be noted that when the liquid crystal molecules are positive liquid crystal molecules, the distance between the long axis direction of the liquid crystal molecules and the second electrode in the disclosed embodiment The included angle between them is greater than or equal to 45°. When the liquid crystal molecules are negative liquid crystal molecules, the angle between the long axis direction of the liquid crystal molecules and the second electrode in the embodiment of the present disclosure is greater than or less than 90°, which ensures that the dielectric constant of the liquid crystal layer 3 is changed after the liquid crystal molecules are deflected. , in order to achieve the purpose of phase shifting.
  • an embodiment of the present invention further provides a microwave radio frequency device, which includes any of the above-mentioned balun components, and the microwave radio frequency device may include, but is not limited to, a filter or a phase shifter.
  • an embodiment of the present invention further provides a liquid crystal antenna, where the liquid crystal antenna includes any of the above phase shifters.
  • the liquid crystal antenna includes any of the above phase shifters.
  • at least two patch units are further provided on the side of the second base substrate 20 away from the liquid crystal layer 3 , wherein the gap between each two patch units is set corresponding to the gap between the electrode strips.

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Abstract

本发明公开提供一种巴伦组件，属于通信技术领域。本发明的巴伦组件，其包括：第一基底，具有相对设置的第一表面和第二表面；第一传输电极，设置在所述第一基底的第一表面上；地电极，其上设置有开口，所述地电极设置在所述第一基底背离所述第一传输电极的一侧；第一介质层设置在所述地电极背离所述第一基底的一侧；第二传输电极和第三传输电极，均设置在所述第一介质层背离所述地电极的一侧，且所述第二传输电极和所述第三传输电极间隔设置；其中，所述第一传输电极、所述第二传输电极和所述第三传输电极在所述第一基底上的正投影与所述开口在基底上的正投影的交点分别为第一交点、第二交点、第三交点；所述第一交点位于所述第二交点与所述第三交点之间。

Description

巴伦组件、微波射频器件及天线 技术领域
本发明属于通信技术领域，具体涉及一种巴伦组件、微波射频器件及天线。
背景技术
巴伦(BALUN：balun-unbalance)组件是一种三端口器件，其可以应用至微波射频器件中，巴伦组件是一种将匹配输入转换为差分输入的射频传输线变压器，可用于激励差分线、放大器、宽带天线、平衡混频器、平衡倍频器及调制器、移相器以及任何需要在两条线路上传输幅度相等且相位相差180°的电路设计。其中，巴伦组件的两个输出幅度相等、相位相反。在频域中，这表示两个输出之间具有180°的相位差；在时域中，这表示一个平衡输出的电压为另一平衡输出的负值。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提供一种巴伦组件、微波射频器件及天线。
第一方面，本公开实施例提供一种巴伦组件，其包括：
第一基底，具有相对设置的第一表面和第二表面；
第一传输电极，设置在所述第一基底的第一表面上；
地电极，其上设置有开口，所述地电极设置在所述第一基底背离所述第一传输电极的一侧；
第一介质层，设置在所述地电极背离所述第一基底的一侧；
第二传输电极和第三传输电极，均设置在所述第一介质层背离所述地电极的一侧，且所述第二传输电极和所述第三传输电极间隔设置；其中，
所述第一传输电极、所述第二传输电极和所述第三传输电极在所述第一 基底上的正投影均与所述开口在第一基底上的正投影存在交叠，且所述第一传输电极、所述第二传输电极和所述第三传输电极在所述第一基底上的正投影与所述开口在基底上的正投影的交点分别为第一交点、第二交点、第三交点；所述第一交点位于所述第二交点与所述第三交点之间。
其中，所述第一传输电极具有相对设置的第一信号端和第一开路端；所述第二传输电极具有相对设置的第二信号端和第二开路端；所述第三传输电极具有相对设置的第三信号端和第三开路端；
所述第一传输电极的所述第一开路端到所述第一交点的线长为L1，所述第二传输电极的所述第二开路端到所述第二交点的线长为L2，所述第三传输电极的所述第三开路端到所述第三交点的线长为L3；L1、L2、L3均大致等于1/4介质波长。
其中，所述第二开路端、所述第三开路端在所述第一基底上正投影位于所述开口的同一侧；且所述第二传输电极的所述第二交点到所述第二信号端的线长为L4，所述第三传输电极的所述第三交点到所述第三信号端的线长为L5，L5与L4相差1/2介质波长。
其中，所述第三传输电极的所述第三交点到所述第三信号端包括蜿蜒线。
其中，所述第一传输电极、所述第二传输电极、所述第三传输电极在所述第一基底上正投影为重叠。
其中，所述第二开路端和所述第三开路端在所述第一基底上正投影分设在所述开口的两侧；且所述第二传输电极的所述第二交点到所述第二信号端的线长为L4，所述第三传输电极的所述第三交点到所述第三信号端的线长为L5，L4与L5大致相等。
其中，所述第一传输电极、所述第二传输电极、所述第三传输电极均包括蜿蜒线。
其中，在所述第一介质层背离地电极的一侧还设置有与所述第一介质层 相对设置的第二基底；所述第二传输电极和所述第三传输电极均设置在所述第一介质层上，在所述第二传输电极和所述第三传输电极所在层与所述第二基底之间设置有第二介质层。
其中，在所述第一介质层背离地电极的一侧还设置有与所述第一介质层相对设置的第二基底；
所述第二传输电极和所述第三传输电极中的一者设置在第一介质层上，另一者设置在所述第二基底靠近所述第一介质层的一侧；或者，所述第二传输电极和所述第三传输电极均设置在所述第二基底靠近所述第一介质层的一侧；
在所述第二传输电极所在层与所述第三传输电极所在层之间设置有第二介质层。
其中，所述第二介质层包括液晶层。
其中，所述开口的延伸方向的宽度介于1/4介质波长至1/2介质波长之间。
第二方面，本公开实施例提供一种微波射频器件，其包括上述的巴伦组件。
其中，所述微波射频器件包括移相器或滤波器。
第三方面，本公开实施例提供一种天线，其包括上述的微波射频器件。
附图说明
图1为一种示例性的移相结构的示意图。
图2为本公开实施例的一种正向耦合巴伦组件的示意图。
图3为本公开实施例的一种反向耦合巴伦结构的示意图。
图4为本公开实施例中的一种巴伦组件的结构示意图。
图5为本公开实施例中的另一种巴伦组件的结构示意图。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步详细描述。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”、“一”或者“该”等类似词语也不表示数量限制，而是表示存在至少一个。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
巴伦(BALUN：balun-unbalance)组件是一种三端口器件，其可以应用至微波射频器件中，巴伦组件是一种将匹配输入转换为差分输入的射频传输线变压器，可用于激励差分线、放大器、宽带天线、平衡混频器、平衡倍频器及调制器、移相器以及任何需要在两条线路上传输幅度相等且相位相差180°的电路设计。其中，巴伦组件的两个输出幅度相等、相位相反。在频域中，这表示两个输出之间具有180°的相位差；在时域中，这表示一个平衡输出的电压为另一平衡输出的负值。
在此需要说明的是，在本公开实施例中以微波射频器件为移相器为例进行说明，但应当理解的微波射频器件为移相器并不构成对本公开实施例的限制。
在一个示例中，移相器不仅包括巴伦组件，而且还包括移相结构；图1为一种示例性的移相结构的示意图；如图1所示，该移相结构包括相对设置的第一衬底基板10和第二衬底基板20，设置在第一衬底基板10靠近第二衬底基板20一侧的第一传输线1，设置在第二衬底基板20靠近第一衬底基板 10一侧的第二传输线2，设置在第一传输线1所在层和第二传输线2所在层之间的介质层，以及接地电极4；其中，该介质层包括但不限于液晶层3，在下述实施例中以该介质层为液晶层3为例进行说明。第一传输线1和第二传输线2包括但不限于微带线，接地电极4则可以设置在第一衬底基板10背离第一传输线1的一侧。第一传输线1和第二传输线2可以采用梳状电极，地电极4则可以采用面状电极，也即第一传输线1、第二传输线2和地电极4构成微带线传输结构；当然，第一传输线1、第二传输线2和地电极4也可以构成带状线传输结构、共表面波导传输结构、基片集成波导传输结构中任意一种，在此不一一列举。
在相关技术中，通过巴伦结构向移相器输入微波信号时，巴伦结构通常采用焊接(直接)馈电的方式，而对于该种方式，存在两种在厚铜线(传输线)上涂覆封框胶的机理：①直通的巴伦结构需要在巴伦输出端和移相器移相段间进行框胶分隔；②焊接的传输线需要穿过封框胶延伸到焊盘边缘；液晶移相器的制备工艺中，封框胶涂过厚铜线可能引入断胶、盒厚均一性、漏液等问题。针对现有的巴伦结构采用焊接(直接)的方式进行馈电所存在的问题，在本公开实施例中提供如下技术方案。第一方面，本公开实施例提供一种巴伦组件，其包括：第一基底100、第一介质层300、第一传输电极11，第二传输电极21、第三传输电极22、地电极12；其中，第一基底100具有相对设置的第一表面和第二表面；第一传输电极11设置在第一基底100的第一表面上；地电极12上具有开口121，其设置在第一基底100背离第一表面的一侧；第一介质层300设置在地电极12背离第一基底100的一侧；第二传输电极21和第三传输电极22设置在第一介质层300背离地电极12的一侧。第一传输电极11、第二传输电极21和第三传输电极22在第一基底100上的正投影均与开口121在第一基底100上的正投影相交叠，且第一传输电极11、第二传输电极21和第三传输电极22在第一基底100上的正投影与开口121在基底上的正投影的交点分别为第一交点N1、第二交点N2、第三交点N3；所述第一交点N1位于所述第二交点N2与所述第三交点N3之 间。
需要说明的是，在本公开实施例中所谓的“交点”是指两者之间的相交的区域，该区域可以是一个点，也可以具有一定的面积，例如第一传输电极11开口121的第一交点N1则为一个矩形区域，具有一定的面积。
在本公开实施例中，由于在第一传输电极11所在的第一基板和第二传输电极21和第三传输电极22所在的第一介质层300之间设置有地电极12，且地电极12上具有开口121，第一传输电极11、第二传输电极21和第三传输电极22在第一基底100上的正投影与开口121在基底上的正投影的交点分别为第一交点N1、第二交点N2、第三交点N3；所述第一交点N1位于所述第二交点N2与所述第三交点N3之间，这样一来，通过电磁耦合作用，第一传输电极11上的所传输的微波信号经过地电极12上的开口121，分别耦合至第二传输电极21和第三传输电极22，以对微波信号进行传输。也就是说，本公开实施例提供的巴伦结构，通过第一传输电极11第二传输电极21和第三传输电极22采用耦合的方式对微波信号进行传输，相较于相关技术中的焊接连通馈电而言，本公开实施例的巴伦结构的馈电效率更高，且反射带宽可达到15％左右，并可以实现180°相差。
在一个示例中，图2为本公开实施例的一种正向耦合巴伦组件的示意图，如图2所示，第一传输电极11、第二传输电极21、第三传输电极22在第一基底100上的正投影无重叠，且第一传输电极11、第二传输电极21和第三传输电极22在第一基底100上的正投影与开口121在基底上的正投影正交，交点分别为第一交点N1、第二交点N2、第三交点N3；第二传输电极21的第二开路端c2和第三传输电极22的第三开路端c3在第一基底100上的正投影位于开口121的同一侧。其中，第一传输电极11具有相对设置的第一信号端a和第一开路端c1；第二传输电极21具有相对设置的第二信号端b1和第二开路端c2；第三传输电极22具有相对设置的第三信号端b2和第三开路端c3；第一传输电极11的所述第一开路端c1到第一交点N1的线长为L1，第二传输电极21的第二开路端c2到第二交点N2的线长为L2，第三传输电 极22的第三开路端c3到第三交点N3的线长为L3，第二传输电极21的第二信号端b1和第二交点N2之间的线长为L4，第三传输电极22的第三信号端b2和第三交点N3之间的线长为L4；第一传输电极11的阻抗为Z1，第二传输电极21和第三传输电极22的并联阻抗为Z2；为实现第二传输电极21和第三传输电极22所输出的两路信号幅度相等，相位相反，地电极12上的开口121与第二传输电极21和第三传输电极22正交的边的边长W介于1/4介质波长至1/2介质波长之间；L1、L2、L3均大致等于1/4介质波长，L4和L5二者相差1/2介质波长，其中，N1到N2和N3之间的距离相等。在本公开实施例中，以L5比L4长1/2介质波长为例进行说明。
在此需要说明的是，介质波长是指电磁波在介质中的波长，和介电常数相关；L1、L2、L3均大致等于1/4介质波长是指，L1、L2、L3均等于1/4介质波长，或者L1、L2、L3均等于1/4介质波长加或者减一个误差值，该误差值可以根据巴伦组件的精度要求具体限定。
继续参照图2，在一些实施例中，由于L5比L4长1/2介质波长，也即第三传输电极22比第二传输电极21长1/2介质波长，因此为缩小巴伦组件的尺寸，第三传输电极22第三交点N3到第三信号端b2包括蜿蜒线。在一些实施例中，蜿蜒线具体可以采用弓字形、波浪形、锯齿形中的任意一种。当然，蜿蜒线也不局限于这几种结构，可以根据巴伦组件的阻抗需求具体设计蜿蜒线的结构。
在另一个示例中，图3为本公开实施例的一种反向耦合巴伦结构的示意图，如图3所示，第一传输电极11、第二传输电极21、第三传输电极22均采用蜿蜒线，第二传输电极21、第三传输电极22在第一基底100上的正投影无重叠，且第一传输电极11、第二传输电极21和第三传输电极22在第一基底100上的正投影与开口121的长度方向在基底上的正投影正交，交点分别为第一交点N1、第二交点N2、第三交点N3；第二传输电极21的第二开路端c2和第三传输电极22的第三开路端c3在第一基底100上的正投影位于开口121的不同侧。其中，第一传输电极11具有相对设置的第一信号端a 和第一开路端c1；第二传输电极21具有相对设置的第二信号端b1和第二开路端c2；第三传输电极22具有相对设置的第三信号端b2和第三开路端c3；第一传输电极11的所述第一开路端c1到第一交点N1的线长为L1，第二传输电极21的第二开路端c2到第二交点N2的线长为L2，第三传输电极22的第三开路端c3到第三交点N3的线长为L3，第二传输电极21的第二信号端b1和第二交点N2之间的线长为L4，第三传输电极22的第三信号端b2和第三交点N3之间的线长为L4；第一传输电极11的阻抗为Z1，第二传输电极21和第三传输电极22的并联阻抗为Z2；为实现第二传输电极21和第三传输电极22所输出的两路信号幅度相等，相位相反，地电极12上的开口121与第二传输电极21和第三传输电极22正交的边的边长W介于1/4介质波长至1/2介质波长之间；L1、L2、L3均大致等于1/4介质波长，L4和L5相等；其中，N1到N2和N3之间的距离相等。。
在此需要说明的是，L1、L2、L3均大致等于1/4介质波长是指，L1、L2、L3均等于1/4介质波长，或者L1、L2、L3均等于1/4介质波长加或者减一个误差值，该误差值可以根据巴伦组件的精度要求具体限定。另外，第一交点N1和第二交点N2之间的距离与第一交点N1和第三交点N3之间的距离相等时，第一传输电极11的阻抗Z1略大于第二传输电极21和第三传输电极22的并联阻抗Z2，以实现更好的功率分配；若第一交点N1和第二交点N2之间的距离与第一交点N1和第三交点N3之间的距离之差越小，则需要，第一传输电极11的阻抗Z1与第二传输电极21和第三传输电极22的并联阻抗Z2之差越大，以实现等功率分配。
继续参照图2，在一些实施例中，蜿蜒线具体可以采用弓字形、波浪形、锯齿形中的任意一种。当然，蜿蜒线也不局限于这几种结构，可以根据巴伦组件的阻抗需求具体设计蜿蜒线的结构。由于在本公开实施例中，反向耦合巴伦组件，第一传输电极11、第二传输电极21、第三传输电极22均采用蜿蜒线，因此可以缩小巴伦组件的尺寸。
在此需要说明的是，以上只是给出一种反向耦合巴伦组件的结构，实际 上只要是第二传输电极21的第二开路端c2和第三传输电极22的第三开路端c3在第一基底100上的正投影位于开口121的不同侧的任何巴伦组件结构均在本公开实施例的保护范围内。
其中，无论是上述的正向耦合巴伦组件还是反向耦合巴伦组件，其中的第二传输电极21和第三传输电极22可以同层设置，也可以分层设置。以下分别对第二传输电极21和第三传输电极22同层设置和分层设置的具体结构进行说明。
图4为本公开实施例中的一种巴伦组件的结构示意图，如图4所示，由下至上分别为输出信号线、第一基底100、地电极12、第一介质层300、第二传输电极21、第二介质层、第三传输电极22、第二基底200。也就是说，第二传输电极21和第三传输电极22分两层设置，且在二者所在层之间夹设第二介质层。其中，第二介质层包括但不限于液晶层(图中未示)。
在此需要说明的是，在图4中为了清楚每一层结构，故第一介质层300与地电极12分离开，实际上第一介质层300可以与地电极12相接触。另外，可以在制备巴伦组件时，将地电极12在第一介质层远离第二基底200的一面上形成。
当将本公开实施例中的巴伦组件应用至移相器中时，此时第一介质层300可以与移相结构中的第一衬底基板10为一体结构，第二基底200可以与第二衬底基底为第为一体结构，巴伦组件中的液晶层3与移相结构中的液晶层3为一层结构。同时，第二传输电极21与第一传输线1为一体结构，第三传输电极22与第二传输线2为一体结构，接地电极4与地电极12可以为一体结构。这样一来，不会增加移相器的制备成本。
图5本公开实施例中的另一种巴伦组件的结构示意图，如图5所示，该种结构的巴伦组件与图4所示的巴伦组件的区别仅在于第二传输电极21和第三传输电极22均设置在第一介质层300上，其余结构与图4中的巴伦组件结构形同，故在此不再重复赘述。当然，在一些实施例中，第二传输电极21和第三传输电极22还可以设置在第二基底200背离第一介质层300的一 侧。在此需要说明的是，在图5中为了清楚每一层结构，故第一介质层300与地电极12分离开，实际上第一介质层300可以与地电极12相接触。另外，可以在制备巴伦组件时，将地电极12在第一介质层原理第二基底200的一面上形成。
另外，还需要说明的是，图4和图5中的第二传输电极21和第三传输电极22的形状只是一种示意，并不表示第二传输电极21和第三传输电极22的实际形状。
在一些实施例中，第一传输电极11、第二传输电极21和第三传输电极22均包括微带线；地电极12包括接地电极4。第一传输电极11、第二传输电极21和第三传输电极22、地电极12的材料均可以采用铜、铝、银、金、铬、钼、镍或铁等金属制成。
在一些实施例中，地电极12上的开口121为矩形，当然，地电极12上开口121形状可以是任何形状，在本公开实施例中并不做限定。
在一些实施例中，第一介质层300、第一基底100和第二基底200可以采用厚度为100-1000微米的玻璃基板，也可采用蓝宝石衬底，还可以使用厚度为10-500微米的聚对苯二甲酸乙二酯基板、三聚氰酸三烯丙酯基板和聚酰亚胺透明柔性基板。具体的，第一介质层300、第一基底100和第二基底200可以采用介电损耗极低的高纯度石英玻璃。相比于普通玻璃基板，第一介质层300、第一基底100和第二基底200采用石英玻璃可以有效减小对微波的损耗，使移相器具有低的功耗和高的信噪比。
其中，液晶层3中的液晶分子为正性液晶分子或负性液晶分子，需要说明的是，当液晶分子为正性液晶分子时，本发公开实施例液晶分子长轴方向与第二电极之间的夹角大于度小于等于45°。当液晶分子为负向液晶分子时，本公开实施例液晶分子长轴方向与第二电极之间的夹角大于度小于90°，保证了液晶分子发生偏转后，改变液晶层3的介电常数，以达到移相的目的。
第二方面，本发明实施例还提供一种微波射频器件，其包括上述的任一 巴伦组件，该微波射频器件可以包括但不限于滤波器或者移相器。
第三方面，本发明实施例还提供一种液晶天线，该液晶天线包括上述的任意一种移相器。其中，在第二衬底基板20的背离液晶层3的一侧还设置有至少两个贴片单元，其中，每两个贴片单元之间的间隙与电极条之间的间隙对应设置。这样一来，可以使得经过上述的任意一种移相器进行相位调整后的微波信号从贴片单元之间的间隙辐射出去。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (13)

  1. 一种巴伦组件，其包括：
    第一基底，具有相对设置的第一表面和第二表面；
    第一传输电极，设置在所述第一基底的第一表面上；
    地电极，其上设置有开口，所述地电极设置在所述第一基底背离所述第一传输电极的一侧；
    第一介质层，设置在所述地电极背离所述第一基底的一侧；
    第二传输电极和第三传输电极，均设置在所述第一介质层背离所述地电极的一侧，且所述第二传输电极和所述第三传输电极间隔设置；其中，
    所述第一传输电极、所述第二传输电极和所述第三传输电极在所述第一基底上的正投影均与所述开口在第一基底上的正投影存在交叠，且所述第一传输电极、所述第二传输电极和所述第三传输电极在所述第一基底上的正投影与所述开口在基底上的正投影的交点分别为第一交点、第二交点、第三交点；所述第一交点位于所述第二交点与所述第三交点之间。
  2. 根据权利要求1所述的巴伦组件，其中，所述第一传输电极具有相对设置的第一信号端和第一开路端；所述第二传输电极具有相对设置的第二信号端和第二开路端；所述第三传输电极具有相对设置的第三信号端和第三开路端；
    所述第一传输电极的所述第一开路端到所述第一交点的线长为L1，所述第二传输电极的所述第二开路端到所述第二交点的线长为L2，所述第三传输电极的所述第三开路端到所述第三交点的线长为L3；L1、L2、L3均大致等于1/4介质波长。
  3. 根据权利要求1或2所述的巴伦组件，其中，所述第二开路端和所述第三开路端在所述第一基底上正投影位于所述开口的同一侧；且所述第二传输电极的所述第二交点到所述第二信号端的线长为L4，所述第三传输电极的所述第三交点到所述第三信号端的线长为L5，L5与L4相差1/2介质波 长。
  4. 根据权利要求3所述的巴伦组件，其中，所述第三传输电极的所述第三交点到所述第三信号端包括蜿蜒线。
  5. 根据权利要求1或2所述的巴伦组件，其中，所述第二开路端和所述第三开路端在所述第一基底上正投影分设在所述开口的两侧，且所述第二传输电极的所述第二交点到所述第二信号端的线长为L4，所述第三传输电极的所述第三交点到所述第三信号端的线长为L5，L4与L5大致相等。
  6. 根据权利要求5所述的巴伦组件，其中，所述第一传输电极、所述第二传输电极、所述第三传输电极均包括蜿蜒线。
  7. 根据权利要求1-6中任一项所述的巴伦组件，其中，在所述第一介质层背离地电极的一侧还设置有与所述第一介质层相对设置的第二基底；所述第二传输电极和所述第三传输电极均设置在所述第一介质层上，在所述第二传输电极和所述第三传输电极所在层与所述第二基底之间设置有第二介质层。
  8. 根据权利要求1-6中任一项所述的巴伦组件，其中，在所述第一介质层背离地电极的一侧还设置有与所述第一介质层相对设置的第二基底；
    所述第二传输电极和所述第三传输电极中的一者设置在第一介质层上，另一者设置在所述第二基底靠近所述第一介质层的一侧；或者，所述第二传输电极和所述第三传输电极均设置在所述第二基底靠近所述第一介质层的一侧；
    在所述第二传输电极所在层与所述第三传输电极所在层之间设置有第二介质层。
  9. 根据权利要求7或8所述的巴伦组件，其中，所述第二介质层包括液晶层。
  10. 根据权利要求1-9中任一项所述的巴伦组件，其中，所述开口的延伸方向的宽度介于1/4介质波长至1/2介质波长之间。
  11. 一种微波射频器件，其包括权利要求1-10中任一项所述的巴伦组 件。
  12. 根据权利要求11所述的微波射频器件，其中，所述微波射频器件包括移相器或滤波器。
  13. 一种天线，其包括权利要求11或12所述的微波射频器件。
PCT/CN2020/117852 2020-09-25 2020-09-25 巴伦组件、微波射频器件及天线 WO2022061746A1 (zh)

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