WO2022041578A1 - Power converter and current comparison feedback circuit - Google Patents

Power converter and current comparison feedback circuit Download PDF

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Publication number
WO2022041578A1
WO2022041578A1 PCT/CN2020/135476 CN2020135476W WO2022041578A1 WO 2022041578 A1 WO2022041578 A1 WO 2022041578A1 CN 2020135476 W CN2020135476 W CN 2020135476W WO 2022041578 A1 WO2022041578 A1 WO 2022041578A1
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Prior art keywords
current
channel mos
mos transistor
unit
mirror
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PCT/CN2020/135476
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French (fr)
Chinese (zh)
Inventor
郭春明
李盛峰
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华源智信半导体(深圳)有限公司
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Publication of WO2022041578A1 publication Critical patent/WO2022041578A1/en

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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/175Indicating the instants of passage of current or voltage through a given value, e.g. passage through zero
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/22Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33561Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having more than one ouput with independent control
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0003Details of control, feedback or regulation circuits
    • H02M1/0009Devices or circuits for detecting current in a converter
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0048Circuits or arrangements for reducing losses
    • H02M1/0054Transistor switching losses
    • H02M1/0058Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • the invention relates to the field of circuit detection, in particular to a power converter and a current comparison feedback circuit.
  • its core components may include, for example, a switch tube and a transformer, and the switch tube is connected in series with the primary winding of the transformer, wherein the switch tube is controlled by the control module, in order to realize the control of the switch tube.
  • it is necessary to detect the source-drain voltage of the switch it is necessary to detect whether the source-drain voltage of the switch tube is close to 0V, and then judge whether to turn on the switch tube according to the detection result, so as to realize ZVS (ZeroVoltageSwitch). This way, the purpose of reducing the turn-on loss can be achieved.
  • one method is to directly sample the source-drain voltage of the switch tube through resistance for detection, however, it will bring about the problem of large power loss in the detection part, and further, may also bring security risks; another One method is to directly detect the voltage of the auxiliary winding. When the voltage fed back by the auxiliary winding is less than 0V, and after a certain time delay, the ZVS of the switch tube can be obtained. This method cannot obtain an accurate ZVS point, and it varies with the output voltage and current. Variety
  • the invention provides a power converter and a current comparison feedback circuit to solve the problems of large power loss and detection accuracy in the detection part. .
  • a power converter comprising: a switch tube, a transformer, and a control module for controlling the on and off of the switch tube, wherein the transformer includes a primary winding on the input side, The secondary winding on the output side and the auxiliary winding on the output side, the switch tube is connected in series with the primary winding and then connected between the input power supply and the ground;
  • the power converter further includes: a first resistor, a second resistor and a current comparison feedback circuit;
  • the first end of the first resistor is connected to the first end of the auxiliary winding, the second end of the first resistor is connected to the first end of the second resistor, and the second end of the second resistor is connected To the second end of the auxiliary winding, the second end of the auxiliary winding is grounded; one end of the current comparison feedback circuit is connected to the second end of the first resistor, and the other end of the current comparison feedback circuit is connected to the the control module, the control module is also connected to the control end of the switch tube;
  • the current comparison feedback circuit is used to:
  • the reference current is determined according to the first current of the first resistor when the switch is in an on state
  • the second current of the first resistor is collected, and a feedback signal is sent to the control module according to the comparison result between the reference current and the second current, so as to use the
  • the feedback signal indicates whether the voltage across the switch tube enters the target interval, and the target interval matches the 0V voltage.
  • the current comparison feedback circuit includes: a current copy unit, a first mirror unit, a second mirror unit, a reference maintaining unit and an output unit; the current copy unit is connected to the second end of the first resistor, so The first mirror unit and the second mirror unit are connected to the current copy unit, the reference sustain unit is connected to the first mirror unit, and the input side of the output unit is connected to the reference sustain unit and the second mirror unit Feedback nodes between mirror elements;
  • the current copying unit is used for: copying the first current and the second current;
  • the first mirroring unit is used for: mirroring the first current copied by the current copying unit when the switch tube is in an on state, and forming an intermediate current; the intermediate current is associated with the first current corresponding to the The first mirror current of ;
  • the reference maintaining unit is configured to: form the reference current matching the intermediate current when the switch is in an on state, and maintain the reference current when the switch is in an off state ;
  • the second mirroring unit is used for: mirroring the second current copied by the current copying unit when the switch tube is in an off state, and forming a second mirror current corresponding to the second current;
  • the output unit is configured to: when the switch tube is in an off state, obtain a comparison result between the second mirror current and the reference current, and obtain a comparison result between the second mirror current and the reference current according to the comparison result of the second mirror current and the reference current , and send out the feedback signal.
  • the difference between the intermediate current and the first mirror current is a fixed value.
  • the first mirroring unit is connected to the control module
  • the control module is also used for:
  • the first mirror unit When the switch tube is in the on state, the first mirror unit is controlled to be in the on state, so that the first mirror unit in the on state can form the intermediate current.
  • the first mirror unit includes a first P-channel MOS transistor, a first N-channel MOS transistor, at least one switch and a first current source; the at least one switch includes a first switch and/or a second switch;
  • the source and gate of the first P-channel MOS transistor are connected to the current replication unit, and the drain of the first P-channel MOS transistor is connected to the first N-channel directly or through the first switch
  • the drain of the MOS transistor, the source of the first N-channel MOS transistor is grounded, the gate of the first N-channel MOS transistor is connected to the reference maintaining unit directly or through the second switch, and the first N-channel MOS transistor is connected to the reference maintaining unit.
  • the gate of an N-channel MOS transistor is also connected to the drain of the first N-channel MOS transistor; the drain of the first P-channel MOS transistor is also directly or indirectly connected to the input side of the first current source , the output side of the first current source is grounded; the at least one switch is connected to the control module;
  • control module controls the first mirror unit to be in an open state, it is specifically configured to: control the at least one switch to be disconnected;
  • control module controls the first mirror unit to be in an on state
  • it is specifically configured to: control the at least one switch to be turned on;
  • the current of the first P-channel MOS transistor is the first mirror current corresponding to the first current when the switch transistor is in an on state and the at least one switch is all on;
  • the current of the first N-channel MOS transistor is the intermediate current when the switch transistor is in an on state and the at least one switch is all on.
  • the reference maintaining unit includes an energy storage device and a second N-channel MOS transistor, and a first end of the energy storage device is respectively connected to the first mirror unit and the second N-channel MOS transistor. a gate, the source of the second N-channel MOS transistor is grounded, and the drain of the second N-channel MOS transistor is connected to the second mirror unit;
  • the energy storage device is used for:
  • the first mirror unit When the first mirror unit forms the intermediate current, obtain the corresponding energy storage current, and store energy to form a maintenance voltage; when the first mirror unit does not form the intermediate current, use the maintenance voltage as the supplying power to the gate of the second N-channel MOS transistor;
  • the current of the second N-channel MOS transistor is the reference current
  • the reference current is a mirror current of the intermediate current
  • the reference current is formed by supplying power to the gate of the second N-channel MOS transistor by the sustain voltage.
  • the second mirroring unit includes a second P-channel MOS transistor, the source and gate of the second P-channel MOS transistor are connected to the current replication unit, and the second P-channel MOS transistor is The drain is connected to the reference sustain unit;
  • the current of the second P-channel MOS tube is a first mirror current corresponding to the first current
  • the current of the second P-channel MOS transistor is a second mirror current corresponding to the second current.
  • the output unit includes a first inverter and a second inverter, the input end of the first inverter is connected to the feedback node, and the output end of the first inverter is connected to the feedback node.
  • the input end of the second inverter and the output end of the second inverter are connected to the control module.
  • the current replication unit includes a second current source, a first transistor, a second transistor and a third P-channel MOS transistor; the first transistor is an NPN transistor, and the second transistor is an NPN transistor.
  • the triode is a PNP tube;
  • the emitter of the first transistor is connected to the second end of the first resistor, the collector of the first transistor is connected to the drain of the third P-channel MOS transistor, the first three The base of the transistor is connected to the collector of the second transistor, the emitter of the first transistor is grounded, and the source of the third P-channel MOS transistor is also connected to the second current source. an input side, the output side of the second current source is connected to the collector of the second triode;
  • the source and gate of the third P-channel MOS transistor are connected to the first mirror unit and the second mirror unit, so that the first mirror unit and the second mirror unit can mirror the The current of the third P-channel MOS transistor obtains the corresponding mirror current.
  • the power converter further includes a clamping module, and both ends of the second resistor are connected in parallel with the clamping module;
  • the clamping module is used to clamp the node voltage between the first resistor and the second resistor to a clamping voltage when the switch tube is turned on, and the clamping voltage matches the 0V voltage .
  • a current comparison feedback circuit comprising: a current copy unit, a first mirror unit, a second mirror unit, a reference maintaining unit and an output unit; the current copy unit is connected to the circuit to be tested, The first mirror unit and the second mirror unit are connected to the current copy unit, the reference maintaining unit is connected to the first mirror unit, and the input side of the output unit is connected to the reference maintaining unit and the first mirror unit. Feedback node between two mirror elements;
  • the current copying unit is used for: collecting the first current of the circuit under test in the first period and the second current in the second period;
  • the first mirror unit is configured to: in the first period, mirror the first current copied by the current copy unit to form an intermediate current; the intermediate current is associated with a first mirror corresponding to the first current current;
  • the reference maintaining unit is used for: forming a reference current matching the intermediate current in the first period, and maintaining the reference current unchanged in the second period;
  • the second mirroring unit is configured to: in the second period, mirror the second current copied by the current copying unit, and form a second mirror current corresponding to the second current;
  • the output unit is configured to: in the second period, obtain a comparison result between the second mirror current and the reference current, and report to the control module according to the comparison result between the second mirror current and the reference current Send a feedback signal.
  • the first mirror unit includes a first P-channel MOS transistor, a first N-channel MOS transistor, at least one switch and a first current source; the at least one switch includes a first switch and/or a second switch;
  • the source and gate of the first P-channel MOS transistor are connected to the current replication unit, and the drain of the first P-channel MOS transistor is connected to the first N-channel directly or through the first switch
  • the drain of the MOS transistor, the source of the first N-channel MOS transistor is grounded, the gate of the first N-channel MOS transistor is connected to the reference maintaining unit directly or through the second switch, and the first N-channel MOS transistor is connected to the reference maintaining unit.
  • the gate of an N-channel MOS transistor is also connected to the drain of the first N-channel MOS transistor; the drain of the first P-channel MOS transistor is also directly or indirectly connected to the input side of the first current source , the output side of the first current source is grounded; the at least one switch is connected to the control module;
  • the current of the first P-channel MOS transistor is the first mirror current corresponding to the first current
  • the current of the first N-channel MOS transistor is the intermediate current.
  • the reference maintaining unit includes an energy storage device and a second N-channel MOS transistor, and a first end of the energy storage device is respectively connected to the first mirror unit and the second N-channel MOS transistor. a gate, the source of the second N-channel MOS transistor is grounded, and the drain of the second N-channel MOS transistor is connected to the second mirror unit;
  • the energy storage device is used for:
  • the first mirror unit When the first mirror unit forms the intermediate current, obtain the corresponding energy storage current, and store energy to form a maintenance voltage; when the first mirror unit does not form the intermediate current, use the maintenance voltage as the supplying power to the gate of the second N-channel MOS transistor;
  • the current of the second N-channel MOS transistor is the reference current
  • the reference current is a mirror current of the intermediate current
  • the reference current is formed by supplying power to the gate of the second N-channel MOS transistor by the sustain voltage.
  • the second mirroring unit includes a second P-channel MOS transistor, the source and gate of the second P-channel MOS transistor are connected to the current replication unit, and the second P-channel MOS transistor is The drain is connected to the reference sustain unit;
  • the current of the second P-channel MOS transistor during the first period is the first mirror current corresponding to the first current
  • the current of the second P-channel MOS transistor is a second mirror current corresponding to the second current.
  • the output unit includes a first inverter and a second inverter, the input end of the first inverter is connected to the feedback node, and the output end of the first inverter is connected to the feedback node.
  • the input end of the second inverter, and the output end of the second inverter is connected to the control module.
  • the current replication unit includes a second current source, a first transistor, a second transistor and a third P-channel MOS transistor; the first transistor is an NPN transistor, and the second transistor is an NPN transistor.
  • the triode is a PNP tube;
  • the emitter of the first triode is directly or indirectly connected to the circuit to be tested, the collector of the first triode is connected to the drain of the third P-channel MOS transistor, and the first triode is connected to the drain of the third P-channel MOS transistor.
  • the base of the transistor is connected to the collector of the second triode, the emitter of the second triode is grounded, the base and the emitter of the second triode are connected to each other, and the third P-channel
  • the source of the channel MOS transistor is also connected to the input side of the second current source, and the output side of the second current source is connected to the collector of the second triode;
  • the source and gate of the third P-channel MOS transistor are connected to the first mirror unit and the second mirror unit, so that the first mirror unit and the second mirror unit can mirror the The current of the third P-channel MOS transistor obtains the corresponding mirror current.
  • the correlation between the current of the first resistor connected in series with the auxiliary winding and the source-drain voltage of the switch tube is fully considered, and based on the maintained reference voltage, the on-switch of the first resistor is accurately detected. Whether the second current after the tube is turned off drops and reaches the first current when the switch tube is not turned off, and further, the detection result can correspond to whether the source-drain voltage of the switch tube crosses zero. It can be seen that the present invention does not need to directly detect the switch tube, avoids the problem of large power loss in the detection part, and realizes detection with lower power loss.
  • the present invention creatively realizes the current of the circuit to be measured under a period (for example, the first period, the period when the switch tube is in a conducting state) Comparison with the current of the circuit to be tested in another period (eg, the second period, the period when the switch is in the off state).
  • FIG. 1 is a schematic diagram 1 of a circuit structure of a power converter in an embodiment of the present invention
  • FIG. 2 is a schematic diagram 2 of the circuit structure of the power converter in an embodiment of the present invention.
  • FIG. 3 is a schematic diagram 3 of the circuit structure of the power converter in an embodiment of the present invention.
  • FIG. 4 is a schematic circuit diagram of a power converter in an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of electrical signal comparison of a power converter in an embodiment of the present invention.
  • FIG. 6 is a schematic diagram 5 of the circuit structure of a power converter in an embodiment of the present invention.
  • FIG. 7 is a schematic diagram 1 of the structure of a current comparison feedback circuit in an embodiment of the present invention.
  • FIG. 8 is a second structural schematic diagram of a current comparison feedback circuit in an embodiment of the present invention.
  • FIG. 9 is a schematic circuit diagram of a current comparison feedback circuit, a first resistor, a second resistor and an auxiliary winding according to an embodiment of the present invention.
  • FIG. 10 is a third structural schematic diagram of a current comparison feedback circuit in an embodiment of the present invention.
  • FIG. 11 is a schematic circuit diagram of a current comparison feedback circuit in an embodiment of the present invention.
  • the power converter provided by the embodiment of the present invention includes: a switch tube 2 , a transformer, and a control module 3 for controlling the on and off of the switch tube, and the transformer includes an input The primary winding Np on the side, the secondary winding Ns on the output side, and the auxiliary winding Na on the output side, the switch tube 2 is connected in series with the primary winding Np and then connected between the input power supply and the ground.
  • the switch tube 2 may be a MOS tube or a BJT tube.
  • the switch tube 2 may be, for example, an NMOS tube. If the switch 2 is an NMOS, the primary winding Np can be connected to the drain of the switch 2 , and the source of the switch 2 can be grounded through a resistor. A resistor or other device may also be provided between the switch tube 2 and the primary winding Np.
  • the control terminal of the switch tube 2 is connected to the control circuit 1. If the switch tube 2 is an NMOS, the control terminal of the switch tube 2 may refer to its gate.
  • the number of secondary windings Ns involved above may be one or more, and no matter what form is adopted, it does not deviate from the scope of the embodiments of the present invention.
  • the power converter in order to detect the source-drain voltage of the switch tube 2, one side of the auxiliary winding is selected to detect, and further, the power converter further includes: a first resistor R1, a second resistor R2 and a current comparison feedback circuit 1.
  • the first end of the first resistor R1 is connected to the first end of the auxiliary winding Na
  • the second end of the first resistor R1 is connected to the first end of the second resistor R2
  • the second resistor R2 The second end of the auxiliary winding Na is connected to the second end of the auxiliary winding Na, and the second end of the auxiliary winding Na is grounded (that is, the second end of the second resistor R2 is also grounded); one end of the current comparison feedback circuit 1 is connected to The second end of the first resistor R1 and the other end of the current comparison feedback circuit 1 are connected to the control module 3 .
  • the power converter may further include a clamping module 4 , and both ends of the second resistor R2 are connected in parallel with the clamping module 4 ;
  • the clamping module 4 is used to clamp the node voltage between the first resistor and the second resistor to a clamping voltage when the switch tube is turned on, and the clamping voltage is in phase with the 0V voltage. match. Furthermore, any device or a combination of devices that can realize this function can be applied to realize the clamping module 4 .
  • the clamping module 4 may include a clamping diode D2 connected in parallel with both ends of the second resistor R2 , and the anode of the clamping diode is grounded.
  • the clamping module 4 can also be implemented with triodes or other devices.
  • clamping diode D2 takes the clamping diode D2 as an example to illustrate the specific function of the clamping module 4:
  • Vin is the primary input voltage
  • Na can also represent the number of turns of the corresponding auxiliary winding in the formula
  • Np can also represent the number of turns of the corresponding primary winding in the formula
  • R1 can also represent the resistance value corresponding to the first resistor in the formula.
  • I_R1 is used to characterize the current of the first resistor R1 (ie I1 ) mentioned above, and V_sense is used to characterize the voltage of the detection node shown in FIGS. 2 to 4 .
  • I1_S1_ON (Vin-0)*(Na/Np)/R1
  • I1_S1_OFF (Vin-Vds)*(Na/Np)/R1
  • the clamp switch S2 mentioned above can be connected in series with the input capacitor C2 and then connected in parallel to both ends of the primary winding Np, and the control end of the clamp switch S2 can be connected to the control module 3 to be controlled by it Further, the clamping switch S2 can be an NMOS.
  • the first end of the secondary winding Ns can be connected to the positive electrode of the output diode D1
  • the second end of the secondary winding Ns can be connected to the negative electrode of the output capacitor C1
  • the negative electrode of the output diode D1 can be connected to the positive electrode of the output capacitor C1.
  • the magnitude of the source-drain voltage Vds can be obtained by detecting the magnitude of the current of the first resistor R1 .
  • the embodiments of the present invention provide a specific implementation manner for current detection, and the following will focus on the current comparison feedback module.
  • the current comparison feedback circuit 1 is used for:
  • the reference current is determined according to the first current of the first resistor when the switch is in an on state
  • the second current of the first resistor is collected, and a feedback signal is sent to the control module according to the comparison result between the reference current and the second current, so as to use the
  • the feedback signal indicates whether the voltage across the switch tube (ie, the source-drain voltage Vds) enters the target interval, and the target interval matches the 0V voltage.
  • the maintenance of the reference current may refer to maintaining the reference current completely unchanged or floating within a small range, wherein the floating range may vary according to the precision of the means for achieving current maintenance, as long as the means are designed to make It remains unchanged (or does not change greatly) as much as possible, and the maintained current is determined according to the first current of the first resistor when the switch is turned on. No matter how the final accuracy is or how the floating range changes, it will not be affected. depart from the scope of the embodiments of the present invention.
  • the target interval can be understood as any interval used to determine whether the source-drain voltage Vds crosses zero, for example, it can refer to an interval less than or equal to 0V, and in this case, it can also refer to an interval less than or equal to a preset value.
  • the value may be a preset value (eg, 10V) that is greater than 0V and close to 0V. It can also be an interval related to the Vin voltage, such as 10%*Vin, so that the on-voltage of the switch tube can be changed with Vin to achieve more functions. If it is powered by 220V, its voltage is
  • the switch S1 when the switch S1 is turned off, the switch S1 can be controlled to be turned on when it is detected that the source-drain voltage Vds of the switch S1 drops to over 0V, because the source-drain voltage Vds and the current I_R1 of the first resistor The decrease is relatively synchronous, and further, the zero-crossing of the source-drain voltage Vds can correspond to the current I_R1 dropping to the current level when the switch S1 is turned on. When the current level is on, it can be understood that the zero-crossing of the source-drain voltage Vds is detected.
  • the above reference current may be the same as the first current, or may have a fixed difference from the first current, and the difference may correspond to the above-mentioned aggregate target interval preset in the interval.
  • first current and second current may be understood as the current of the same circuit under test at different times (eg, the current of the first resistor when the switch is on and the current of the first resistor when the switch is off).
  • the correlation between the current of the first resistor connected in series with the auxiliary winding and the source-drain voltage of the switch tube is fully considered, and based on the maintained reference voltage, the voltage of the first resistor after the switch tube is turned off is accurately detected. Whether the second current drops and reaches the first current when the switch tube is not turned off, and further, the detection result can correspond to whether the source-drain voltage of the switch tube crosses zero. It can be seen that the present invention does not need to directly detect the switch tube, avoids the problem of large power loss in the detection part, and realizes detection with lower power loss.
  • the present invention creatively realizes that the current of the circuit to be tested in one period (for example, the first period, the period when the switch is in the on state) is different from the current of the circuit to be tested in another period (for example, the second period, when the switch is off).
  • the first period for example, the first period, the period when the switch is in the on state
  • the second period when the switch is off
  • the current comparison feedback circuit 1 in the power converter includes: a current copy unit 13 , a first mirror unit 11 , a second mirror unit 12 , a reference maintaining unit 14 and an output unit 15 .
  • the current replication unit 13 is connected to the second end of the first resistor R1 (ie, connected to the node between the first resistor R1 and the second resistor R2 ), the first mirror unit 11 and the second mirror unit 12
  • the current replication unit 13 is connected, the reference maintaining unit 14 is connected to the first mirroring unit 11, and the input side of the output unit 15 is connected to the feedback node between the reference maintaining unit and the second mirroring unit;
  • the current copying unit 13 is used to copy the first current and the second current; for example, when the switch is turned on, the copied first current can be obtained, and when the switch is turned off, the copied first current can be obtained. two current;
  • the first mirroring unit 11 is used to: when the switch tube 2 is in an on state, mirror the first current copied by the current copying unit, and form an intermediate current; the intermediate current is associated with the first current
  • the first mirror current corresponding to the current; the intermediate current can be, for example, the same as the first mirror current, or it can have a fixed difference from the first mirror current, or, for example, the difference between the two does not exceed a preset difference range. .
  • the reference maintaining unit 14 is used to: form the reference current matching the intermediate current when the switch tube 2 is in an on state, and maintain the reference current when the switch tube is in an off state Reference current; the reference current may be the same as the intermediate current, and at the same time, it does not exclude the implementation of a fixed difference between the two, or the difference does not exceed a preset difference range.
  • the second mirroring unit 12 is configured to: when the switch tube 2 is in an off state, mirror the second current copied by the current copying unit, and form a second mirror current corresponding to the second current;
  • the output unit 15 is configured to: when the switch tube 2 is in an off state, obtain a comparison result between the second mirror current and the reference current, and obtain a comparison result between the second mirror current and the reference current according to the difference between the second mirror current and the reference current. The results of the comparison are compared, and the feedback signal is issued.
  • the first mirror unit is connected to the control module (not shown in the figure);
  • the control module 3 is also used for:
  • the first mirror unit 11 is controlled to be in an open state
  • the first mirror unit 11 When the switch tube 2 is in the on state, the first mirror unit 11 is controlled to be in the on state, so that the first mirror unit in the on state can form the intermediate current, that is, only when the first mirror unit is in the on state. Only in this state can the first mirror unit 11 enable the reference maintaining unit to form a reference current in response to the intermediate current.
  • the first mirror unit 11 includes a first P-channel MOS transistor PM1 , a first N-channel MOS transistor NM1 , at least one switch and a first current source 111 ; the at least one The switches include a first switch K1 and/or a second switch K2; in a further optional solution, at least one switch may further include a third switch K3 shown in FIG. 9 in series with the first current source 111 .
  • the first P-channel MOS transistor PM1 can be, for example, the same size as the second P-channel MOS transistor PM2 in the second mirroring unit 12 and the third P-channel MOS transistor PM3 in the current copying unit 13, and further, it can be realized mirror image of the current.
  • the source and gate of the first P-channel MOS transistor PM1 are connected to the current copy unit 13 (for example, the source and the gate of the third P-channel MOS transistor PM3 can be connected in a matched manner).
  • the drain of the channel MOS transistor PM1 is connected to the drain of the first N-channel MOS transistor NM1 directly or through the first switch K1, the source of the first N-channel MOS transistor NM1 is grounded, and the first N-channel MOS transistor NM1 is connected to the ground.
  • the gate of the N-channel MOS transistor NM1 is connected to the reference maintaining unit 14 directly or through the second switch K2 (for example, the gate of the second N-channel MOS transistor NM2 can be connected to the first end of the energy storage capacitor C3) , the gate of the first N-channel MOS transistor NM1 is also connected to the drain of the first N-channel MOS transistor NM1; the drain of the first P-channel MOS transistor PM1 is also directly or indirectly connected to the The input side of the first current source 111 (for example, the input side of the first current source 111 can be connected directly or via the third switch K3), the output side of the first current source 111 is grounded; the at least one switch is connected to the control The module 3 , in turn, can be switched on and off under the control of the control module 3 .
  • control module 3 controls the first mirror unit 11 to be in an open state, it is specifically configured to: control the at least one switch to be disconnected;
  • control module 3 controls the first mirror unit 11 to be in an on state, it is specifically configured to: control the at least one switch to be turned on;
  • the current of the first P-channel MOS transistor PM1 is the first mirror current corresponding to the first current
  • the current of the first N-channel MOS transistor NM1 is the intermediate current when the switch transistor 2 is in an on state and the at least one switch is all on.
  • the reference maintaining unit 4 includes an energy storage device (eg, a storage capacitor C3 ) and a second N-channel MOS transistor NM2 , and the first ends of the energy storage device (eg, the storage capacitor C3 ) are respectively connected to
  • the first mirror unit 11 eg, the gate of the first N-channel MOS transistor NM1 and the gate of the second N-channel MOS transistor NM2, and the source of the second N-channel MOS transistor NM2 Grounding, the drain of the second N-channel MOS transistor NM2 is connected to the second mirror unit (specifically, it can be connected to the second P-channel MOS transistor PM2 therein).
  • the first N-channel MOS transistor NM1 and the second N-channel MOS transistor NM2 are of the same size, at this time, the first N-channel MOS transistor NM1 and the second N-channel MOS transistor NM1 Tube NM2 can form a mirrored current.
  • the energy storage device is used for:
  • the first mirror unit When the first mirror unit forms the intermediate current, obtain a corresponding energy storage current, and store energy to form a maintenance voltage;
  • the gate of the second N-channel MOS transistor is powered by the sustain voltage.
  • the energy storage current may be, for example, the gate current of the first N-channel MOS transistor NM1.
  • the above maintenance voltage can be, for example, the voltage between the gate of the first N-channel MOS transistor NM1 and the ground.
  • the intermediate current may be, for example, the source-drain current of the first N-channel MOS transistor NM1.
  • the current of the second N-channel MOS transistor NM2 is the reference current mentioned above; and then:
  • the reference current is a mirror current of the intermediate current
  • the reference current is formed by the power supply of the sustain voltage to the gate of the second N-channel MOS transistor NM2, because the sustain voltage of the energy storage device has With certain stability, the gate voltage of the second N-channel MOS transistor NM2 can be maintained, and correspondingly, the source-drain current of the second N-channel MOS transistor NM2 can be maintained at the reference current.
  • the second mirror unit 12 includes a second P-channel MOS transistor PM2, and the source and gate of the second P-channel MOS transistor PM2 are connected to the current replication unit (for example, matched to connect the third The source and gate of the P-channel MOS transistor PM3), the drain of the second P-channel MOS transistor PM2 is connected to the reference maintaining unit (for example, the drain of the second N-channel MOS transistor NM2);
  • the current of the second P-channel MOS tube PM2 is the first mirror current corresponding to the first current
  • the current of the second P-channel MOS transistor PM2 is a second mirror current corresponding to the second current.
  • the switch S1 is turned on, and the direction of the current flowing through the first resistor R1 is shown in Figure 4; After the current (or converted into a voltage) can be maintained, taking FIG. 7 and FIG. 9 as examples, the first switch K1, the second switch K2, and the third switch K3 are in the on state, and the first switch K1, the second switch K2, and the third switch K3
  • the current ie, the first current
  • Idc may be the current provided by the first current source 111
  • the second N-channel MOS transistor NM2 and the first N-channel MOS transistor NM1 are also in a mirror relationship, and flow through the second N-channel MOS transistor NM2
  • the direction of the current flowing through R1 is opposite to that shown in Figure 4.
  • the source-drain voltage Vds of the switch tube decreases to Vin at the time of t2, and the voltage V_sense of the corresponding detection node drops to zero.
  • the switch tube The source-drain voltage Vds drops from Vin resonance.
  • the current flowing through the first resistor R1 represents the resonance voltage, and the current flows through the second P-channel MOS transistor PM2 through another mirror source.
  • INM2 ie The maintained reference current
  • the output signal of the output module can be reversed, and the signal is given to drive the switch S1. Since the voltage represented by Idc is very low, such as 10V, the switch S1 achieves ZVS (ie zero-crossing) at this time. detection is turned on).
  • Any circuit structure in the art that can feed back the comparison result represented by the signal of the feedback node to the control module 3 can be used as an example of the output unit 15 .
  • the output unit 15 includes a first inverter A1 and a second inverter A2, the input end of the first inverter A1 is connected to the feedback node, the The output end of the first inverter A1 is connected to the input end of the second inverter A2 , and the output end of the second inverter A2 is connected to the control module 3 .
  • Any circuit structure capable of replicating the first current and the second current in the art can be used as an example of the current replicating unit 13 .
  • the current replication unit 13 includes a second current source 131, a first transistor Q1, a second transistor Q2 and a third P-channel MOS transistor PM3;
  • a transistor Q1 is an NPN transistor, and the second transistor is a PNP transistor.
  • the emitter of the first transistor Q1 is directly or indirectly connected to the second end of the first resistor R1, and the collector of the first transistor Q1 is connected to the drain of the third P-channel MOS transistor PM3 pole, the base of the first transistor Q1 is connected to the collector of the second transistor Q2, the emitter of the second transistor Q2 is grounded, and the base of the second transistor Q2 connected to the emitter, the source of the third P-channel MOS transistor PM3 is also connected to the input side of the second current source 131, and the output side of the second current source 131 is connected to the second triode Collector of Q2;
  • the source and gate of the third P-channel MOS transistor PM3 are connected to the first mirror unit 11 and the second mirror unit 12, so that: the first mirror unit 11 and the second mirror unit 12 can mirror the current of the third P-channel MOS transistor PM3 to obtain a corresponding mirror current.
  • connection relationship between the third P-channel channel MOS transistor PM3 and the first mirror unit 11 and the second mirror unit 12 can be understood with reference to the foregoing description and the circuit shown in FIG. 9 .
  • the voltages of the first transistor Q1 and the second transistor Q2 are approximately equal.
  • IR1 is the current of the first resistor R1.
  • the first current source 111 can also be removed, and the mirror ratio of the first N-channel MOS transistor NM1 and the second N-channel MOS transistor NM2 can be changed, for example, 10:9, then
  • the reference current source current is 90% of the first current source, that is, when the switch S1 is turned off and Vds drops to 10%*Vin, it can be considered that Vds drops to 0.
  • a current comparison feedback circuit is provided, which can also be understood as: the application scenarios of the current comparison feedback circuit mentioned above are not limited to the solutions formed when the power converter is used. No matter what kind of scenario is applied, the comparison of currents in different time periods and the feedback of the comparison results can be realized, which can also be regarded as an implementation of the embodiments of the present invention.
  • the current comparison feedback circuit 1 includes: a current copy unit 13 , a first mirror unit 11 , a second mirror unit 12 , a reference maintaining unit 14 and an output unit 15 ;
  • the current copy unit 13 is connected to the under-test circuit, the first mirror unit 11 and the second mirror unit 12 are connected to the current copy unit 13, the reference maintaining unit 14 is connected to the first mirror unit 11, and the input side of the output unit 15 is connected to the the feedback node between the reference maintaining unit 14 and the second mirroring unit 12;
  • the current copying unit 13 is used for: collecting the first current of the circuit under test in the first period and the second current in the second period;
  • the first mirroring unit 11 is configured to: in the first period, mirror the first current copied by the current copying unit to form an intermediate current; the intermediate current is associated with the first current corresponding to the first current mirror current;
  • the reference maintaining unit 14 is configured to: form a reference current matching the intermediate current during the first period, and maintain the reference current unchanged during the second period;
  • the second mirror unit 12 is configured to: in the second period, mirror the second current copied by the current copy unit, and form a second mirror current corresponding to the second current;
  • the output unit 15 is configured to: in the second period of time, obtain a comparison result between the second mirror current and the reference current, and according to the comparison result between the second mirror current and the reference current, to control the The module sends out a feedback signal.
  • the circuit to be tested can be, for example, the circuit of the first resistor R1 mentioned above, the first period of time can be, for example, the period of time when the switch tube 2 is turned on, and the second period of time can be, for example, the period of time when the switch tube 2 is turned on. .
  • the first mirroring unit 11 includes a first P-channel MOS transistor PM1, a first N-channel MOS transistor NM1, at least one switch and a first current source 111; the at least one switch includes a first switch K1 and/or the second switch K2;
  • the source and gate of the first P-channel MOS transistor PM1 are connected to the current copying unit 13, and the drain of the first P-channel MOS transistor PM1 is connected to the first P-channel MOS transistor directly or through the first switch K1.
  • the drain of an N-channel MOS transistor NM1, the source of the first N-channel MOS transistor NM1 is grounded, and the gate of the first N-channel MOS transistor NM1 is connected directly or through the second switch K2.
  • the gate of the first N-channel MOS transistor NM1 is also connected to the drain of the first N-channel MOS transistor NM2; the drain of the first P-channel MOS transistor PM1 is also directly connected Or indirectly connected to the input side of the first current source 111, and the output side of the first current source 111 is grounded; the at least one switch is connected to the control module;
  • the current of the first P-channel MOS transistor is the first mirror current corresponding to the first current
  • the current of the first N-channel MOS transistor is the intermediate current.
  • the reference maintaining unit includes an energy storage device (for example, an energy storage capacitor C3) and a second N-channel MOS transistor NM2, and the first end of the energy storage device is respectively connected to the first mirror unit 11 and the second N-channel MOS transistor.
  • the gate of the second N-channel MOS transistor NM2 the source of the second N-channel MOS transistor is grounded, and the drain of the second N-channel MOS transistor NM2 is connected to the second mirror unit;
  • the energy storage device is used for:
  • the first mirror unit When the first mirror unit forms the intermediate current, obtain the corresponding energy storage current, and store energy to form a maintenance voltage; when the first mirror unit does not form the intermediate current, use the maintenance voltage as the supplying power to the gate of the second N-channel MOS transistor;
  • the current of the second N-channel MOS transistor NM2 is the reference current
  • the reference current is a mirror current of the intermediate current
  • the reference current is formed by the power supply of the sustain voltage to the gate of the second N-channel MOS transistor.
  • the second mirroring unit 12 includes a second P-channel MOS transistor PM2, the source and gate of the second P-channel MOS transistor PM2 are connected to the current copying unit 13, and the second P-channel MOS transistor PM2 is connected to the current copying unit 13.
  • the drain of the channel MOS transistor PM2 is connected to the reference maintaining unit 14;
  • the current of the second P-channel MOS transistor during the first period is the first mirror current corresponding to the first current
  • the current of the second P-channel MOS transistor is a second mirror current corresponding to the second current.
  • the output unit 15 includes a first inverter A1 and a second inverter A2, an input end of the first inverter A1 is connected to the feedback node, and an input end of the first inverter A1 is connected to the feedback node.
  • the output end is connected to the input end of the second inverter A2, and the output end of the second inverter A2 is connected to the control module.
  • the current replication unit includes a second current source 131, a first transistor Q1, a second transistor Q2 and a third P-channel MOS transistor PM3; the first transistor Q1 is an NPN transistor , the second transistor Q2 is a PNP tube;
  • the emitter of the first transistor Q1 is directly or indirectly connected to the circuit to be tested, the collector of the first transistor Q1 is connected to the drain of the third P-channel MOS transistor, and the first transistor Q1 is connected to the drain of the third P-channel MOS transistor.
  • the base of the transistor Q1 is connected to the collector of the second transistor Q2, the emitter of the second transistor Q2 is grounded, and the base and the emitter of the second transistor Q2 are connected to each other,
  • the source of the third P-channel MOS transistor PM3 is also connected to the input side of the second current source 131, and the output side of the second current source 131 is connected to the collector of the second transistor Q2;
  • the source and gate of the third P-channel MOS transistor PM3 are connected to the first mirror unit 11 and the second mirror unit 12, so that: the first mirror unit 11 and the second mirror unit 12 can mirror the current of the third P-channel MOS transistor to obtain a corresponding mirror current.

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Abstract

A power converter and a current comparison feedback circuit (1). The current comparison feedback circuit (1) can be used for forming and maintaining a reference current, the reference current being determined according to a first current of a first resistor (R1) when a switching tube (2) is in an on state; when the switching tube (2) is in an off state, a second current of the first resistor (R1) is acquired, and according to a comparison result of the reference current and the second current, a feedback signal is sent to a control module (3) so as to utilize the feedback signal to represent whether a voltage at the two ends of the switching tube (2) enters a target interval, the target interval matching voltage 0 V.

Description

电源变换器与电流比较反馈电路Power Converter and Current Comparison Feedback Circuit 技术领域technical field
本发明涉及电路检测领域,尤其涉及一种电源变换器与电流比较反馈电路。The invention relates to the field of circuit detection, in particular to a power converter and a current comparison feedback circuit.
背景技术Background technique
开关电源变换器中,以反激式变换器为例,其核心部件例如可包括开关管与变压器,开关管与变压器的初级绕组串联,其中开关管由控制模块控制,为了实现对开关管的控制,以及其他可能的控制需求,需检测开关管的源漏电压。其中,需要检测开关管的源漏电压是否接近于0V,进而根据检测结果判断是否要开通开关管,实现ZVS(即零电压开关ZeroVoltageSwitch)通过该方式,可以达到降低开通损耗的目的。In the switching power supply converter, taking the flyback converter as an example, its core components may include, for example, a switch tube and a transformer, and the switch tube is connected in series with the primary winding of the transformer, wherein the switch tube is controlled by the control module, in order to realize the control of the switch tube. , and other possible control requirements, it is necessary to detect the source-drain voltage of the switch. Among them, it is necessary to detect whether the source-drain voltage of the switch tube is close to 0V, and then judge whether to turn on the switch tube according to the detection result, so as to realize ZVS (ZeroVoltageSwitch). This way, the purpose of reducing the turn-on loss can be achieved.
现有的相关技术中,一种方法是通过电阻直接采样开关管的源漏电压进行检测的,然而,其会带来检测部分功率损耗大的问题,进而,还可能带来安全风险;另一种方法是直接检测辅助绕组的电压,当辅助绕组反馈的电压小于0V,并且延时一定时间得到开关管的ZVS,这种方法无法得到一个准确的ZVS点,而且随着输出电压和电流变化而变化In the existing related art, one method is to directly sample the source-drain voltage of the switch tube through resistance for detection, however, it will bring about the problem of large power loss in the detection part, and further, may also bring security risks; another One method is to directly detect the voltage of the auxiliary winding. When the voltage fed back by the auxiliary winding is less than 0V, and after a certain time delay, the ZVS of the switch tube can be obtained. This method cannot obtain an accurate ZVS point, and it varies with the output voltage and current. Variety
发明内容SUMMARY OF THE INVENTION
本发明提供一种电源变换器与电流比较反馈电路,以解决检测部分功率损耗大和检测精度的问题。。The invention provides a power converter and a current comparison feedback circuit to solve the problems of large power loss and detection accuracy in the detection part. .
根据本发明的第一方面,提供了一种电源变换器,包括:开关管、变压器与用于控制所述开关管导通与关断的控制模块,所述变压器包括输入侧的原边绕组、输出侧的副边绕组,以及输出侧的辅助绕组,所述开关管与所述原边绕组串联后连接于输入电源与地之间;According to a first aspect of the present invention, a power converter is provided, comprising: a switch tube, a transformer, and a control module for controlling the on and off of the switch tube, wherein the transformer includes a primary winding on the input side, The secondary winding on the output side and the auxiliary winding on the output side, the switch tube is connected in series with the primary winding and then connected between the input power supply and the ground;
所述电源变换器,还包括:第一电阻、第二电阻与电流比较反馈电路;The power converter further includes: a first resistor, a second resistor and a current comparison feedback circuit;
所述第一电阻的第一端连接至所述辅助绕组的第一端,所述第一电阻的第二端连接所述第二电阻的第一端,所述第二电阻的第二端连接至所述辅助 绕组的第二端,所述辅助绕组的第二端接地;所述电流比较反馈电路的一端连接所述第一电阻的第二端,所述电流比较反馈电路的另一端连接所述控制模块,所述控制模块还连接所述开关管的控制端;The first end of the first resistor is connected to the first end of the auxiliary winding, the second end of the first resistor is connected to the first end of the second resistor, and the second end of the second resistor is connected To the second end of the auxiliary winding, the second end of the auxiliary winding is grounded; one end of the current comparison feedback circuit is connected to the second end of the first resistor, and the other end of the current comparison feedback circuit is connected to the the control module, the control module is also connected to the control end of the switch tube;
所述电流比较反馈电路用于:The current comparison feedback circuit is used to:
形成并维持住参考电流,所述参考电流是根据所述开关管处于导通状态时所述第一电阻的第一电流确定的;forming and maintaining a reference current, where the reference current is determined according to the first current of the first resistor when the switch is in an on state;
在所述开关管处于关断状态时,采集所述第一电阻的第二电流,并根据所述参考电流与所述第二电流的比较结果,向所述控制模块发送反馈信号,以利用所述反馈信号表征所述开关管的两端电压是否进入目标区间,所述目标区间与0V电压相匹配。When the switch tube is in an off state, the second current of the first resistor is collected, and a feedback signal is sent to the control module according to the comparison result between the reference current and the second current, so as to use the The feedback signal indicates whether the voltage across the switch tube enters the target interval, and the target interval matches the 0V voltage.
可选的,所述电流比较反馈电路包括:电流复制单元、第一镜像单元、第二镜像单元、参考维持单元与输出单元;所述电流复制单元连接所述第一电阻的第二端,所述第一镜像单元与所述第二镜像单元连接所述电流复制单元,所述参考维持单元连接所述第一镜像单元,所述输出单元的输入侧连接所述参考维持单元与所述第二镜像单元之间的反馈节点;Optionally, the current comparison feedback circuit includes: a current copy unit, a first mirror unit, a second mirror unit, a reference maintaining unit and an output unit; the current copy unit is connected to the second end of the first resistor, so The first mirror unit and the second mirror unit are connected to the current copy unit, the reference sustain unit is connected to the first mirror unit, and the input side of the output unit is connected to the reference sustain unit and the second mirror unit Feedback nodes between mirror elements;
所述电流复制单元用于:复制所述第一电流与所述第二电流;The current copying unit is used for: copying the first current and the second current;
所述第一镜像单元用于:在所述开关管处于导通状态时,镜像所述电流复制单元复制到的第一电流,并形成中间电流;所述中间电流关联于所述第一电流对应的第一镜像电流;The first mirroring unit is used for: mirroring the first current copied by the current copying unit when the switch tube is in an on state, and forming an intermediate current; the intermediate current is associated with the first current corresponding to the The first mirror current of ;
所述参考维持单元用于:在所述开关管处于导通状态时,形成与所述中间电流相匹配的所述参考电流,并在所述开关管处于关断状态时,维持住所述参考电流;The reference maintaining unit is configured to: form the reference current matching the intermediate current when the switch is in an on state, and maintain the reference current when the switch is in an off state ;
所述第二镜像单元用于:在所述开关管处于关断状态时,镜像所述电流复制单元复制到的第二电流,并形成所述第二电流对应的第二镜像电流;The second mirroring unit is used for: mirroring the second current copied by the current copying unit when the switch tube is in an off state, and forming a second mirror current corresponding to the second current;
所述输出单元用于:在所述开关管处于关断状态时,获取所述第二镜像电流与所述参考电流的比较结果,并根据所述第二镜像电流与所述参考电流的比较结果,发出所述反馈信号。The output unit is configured to: when the switch tube is in an off state, obtain a comparison result between the second mirror current and the reference current, and obtain a comparison result between the second mirror current and the reference current according to the comparison result of the second mirror current and the reference current , and send out the feedback signal.
可选的,所述中间电流与所述第一镜像电流的差值为固定值。Optionally, the difference between the intermediate current and the first mirror current is a fixed value.
可选的,所述第一镜像单元连接所述控制模块;Optionally, the first mirroring unit is connected to the control module;
所述控制模块还用于:The control module is also used for:
在所述开关管处于关断状态时,控制所述第一镜像单元处于开路状态;When the switch tube is in an off state, controlling the first mirror unit to be in an open state;
在所述开关管处于导通状态时,控制所述第一镜像单元处于导通状态,以使得处于导通状态的所述第一镜像单元才能够形成所述中间电流。When the switch tube is in the on state, the first mirror unit is controlled to be in the on state, so that the first mirror unit in the on state can form the intermediate current.
可选的,所述第一镜像单元包括第一P沟道MOS管、第一N沟道MOS管、至少一个开关与第一电流源;所述至少一个开关包括第一开关和/或第二开关;Optionally, the first mirror unit includes a first P-channel MOS transistor, a first N-channel MOS transistor, at least one switch and a first current source; the at least one switch includes a first switch and/or a second switch;
所述第一P沟道MOS管的源极与栅极连接所述电流复制单元,所述第一P沟道MOS管的漏极直接或通过所述第一开关连接所述第一N沟道MOS管的漏极,所述第一N沟道MOS管的源极接地,所述第一N沟道MOS管的栅极直接或通过所述第二开关连接所述参考维持单元,所述第一N沟道MOS管的栅极还连接所述第一N沟道MOS管的漏极;所述第一P沟道MOS管的漏极还直接或间接连接所述第一电流源的输入侧,所述第一电流源的输出侧接地;所述至少一个开关连接所述控制模块;The source and gate of the first P-channel MOS transistor are connected to the current replication unit, and the drain of the first P-channel MOS transistor is connected to the first N-channel directly or through the first switch The drain of the MOS transistor, the source of the first N-channel MOS transistor is grounded, the gate of the first N-channel MOS transistor is connected to the reference maintaining unit directly or through the second switch, and the first N-channel MOS transistor is connected to the reference maintaining unit. The gate of an N-channel MOS transistor is also connected to the drain of the first N-channel MOS transistor; the drain of the first P-channel MOS transistor is also directly or indirectly connected to the input side of the first current source , the output side of the first current source is grounded; the at least one switch is connected to the control module;
所述控制模块控制所述第一镜像单元处于开路状态时,具体用于:控制所述至少一个开关断开;When the control module controls the first mirror unit to be in an open state, it is specifically configured to: control the at least one switch to be disconnected;
所述控制模块控制所述第一镜像单元处于导通状态时,具体用于:控制所述至少一个开关导通;When the control module controls the first mirror unit to be in an on state, it is specifically configured to: control the at least one switch to be turned on;
其中:in:
所述开关管处于导通状态且所述至少一个开关均导通时所述第一P沟道MOS管的电流为所述第一电流对应的第一镜像电流;The current of the first P-channel MOS transistor is the first mirror current corresponding to the first current when the switch transistor is in an on state and the at least one switch is all on;
所述开关管处于导通状态且所述至少一个开关均导通时所述第一N沟道MOS管的电流为所述中间电流。The current of the first N-channel MOS transistor is the intermediate current when the switch transistor is in an on state and the at least one switch is all on.
可选的,所述参考维持单元包括储能器件与第二N沟道MOS管,所述储能器件的第一端分别连接所述第一镜像单元与所述第二N沟道MOS管的栅极,所述第二N沟道MOS管的源极接地,所述第二N沟道MOS管的漏极连接所述第二镜像单元;Optionally, the reference maintaining unit includes an energy storage device and a second N-channel MOS transistor, and a first end of the energy storage device is respectively connected to the first mirror unit and the second N-channel MOS transistor. a gate, the source of the second N-channel MOS transistor is grounded, and the drain of the second N-channel MOS transistor is connected to the second mirror unit;
所述储能器件用于:The energy storage device is used for:
在所述第一镜像单元形成所述中间电流时,获取对应的储能电流,并储能形成维持电压;在所述第一镜像单元未形成所述中间电流时,利用所述维持电压为所述第二N沟道MOS管的栅极供电;When the first mirror unit forms the intermediate current, obtain the corresponding energy storage current, and store energy to form a maintenance voltage; when the first mirror unit does not form the intermediate current, use the maintenance voltage as the supplying power to the gate of the second N-channel MOS transistor;
其中,所述第二N沟道MOS管的电流为所述参考电流;Wherein, the current of the second N-channel MOS transistor is the reference current;
所述第一镜像单元形成所述中间电流时,所述参考电流是所述中间电流的镜像电流;When the first mirror unit forms the intermediate current, the reference current is a mirror current of the intermediate current;
所述第一镜像单元未形成所述中间电流时,所述参考电流是所述维持电压对所述第二N沟道MOS管栅极的供电形成的。When the first mirror unit does not form the intermediate current, the reference current is formed by supplying power to the gate of the second N-channel MOS transistor by the sustain voltage.
可选的,所述第二镜像单元包括第二P沟道MOS管,所述第二P沟道MOS管的源极与栅极连接所述电流复制单元,所述第二P沟道MOS管的漏极连接所述参考维持单元;Optionally, the second mirroring unit includes a second P-channel MOS transistor, the source and gate of the second P-channel MOS transistor are connected to the current replication unit, and the second P-channel MOS transistor is The drain is connected to the reference sustain unit;
其中:in:
所述开关管处于导通状态时所述第二P沟道MOS管的电流为所述第一电流对应的第一镜像电流;When the switch tube is in an on state, the current of the second P-channel MOS tube is a first mirror current corresponding to the first current;
所述开关管处于关断状态时所述第二P沟道MOS管的电流为所述第二电流对应的第二镜像电流。When the switch transistor is in an off state, the current of the second P-channel MOS transistor is a second mirror current corresponding to the second current.
可选的,所述输出单元包括第一反相器与第二反相器,所述第一反相器的输入端连接所述反馈节点,所述第一反相器的输出端连接所述第二反相器的输入端,所述第二反相器的输出端连接所述控制模块。Optionally, the output unit includes a first inverter and a second inverter, the input end of the first inverter is connected to the feedback node, and the output end of the first inverter is connected to the feedback node. The input end of the second inverter and the output end of the second inverter are connected to the control module.
可选的,所述电流复制单元包括第二电流源、第一三极管、第二三极管与第三P沟道MOS管;所述第一三极管为NPN管,所述第二三极管为PNP管;Optionally, the current replication unit includes a second current source, a first transistor, a second transistor and a third P-channel MOS transistor; the first transistor is an NPN transistor, and the second transistor is an NPN transistor. The triode is a PNP tube;
所述第一三极管的发射极连接所述第一电阻的第二端,所述第一三极管的集电极连接所述第三P沟道MOS管的漏极,所述第一三极管的基极连接所述第二三极管的集电极,所述第一三极管的发射极接地,所述第三P沟道MOS管的源极还连接所述第二电流源的输入侧,所述第二电流源的输出侧连接所述第二三极管的集电极;The emitter of the first transistor is connected to the second end of the first resistor, the collector of the first transistor is connected to the drain of the third P-channel MOS transistor, the first three The base of the transistor is connected to the collector of the second transistor, the emitter of the first transistor is grounded, and the source of the third P-channel MOS transistor is also connected to the second current source. an input side, the output side of the second current source is connected to the collector of the second triode;
所述第三P沟道MOS管的源极和栅极连接所述第一镜像单元与所述第二镜像单元,以使得:所述第一镜像单元与所述第二镜像单元能够镜像所述第三P沟道MOS管的电流,得到对应的镜像电流。The source and gate of the third P-channel MOS transistor are connected to the first mirror unit and the second mirror unit, so that the first mirror unit and the second mirror unit can mirror the The current of the third P-channel MOS transistor obtains the corresponding mirror current.
可选的,所述的电源变换器,还包括钳位模块,所述第二电阻的两端并联所述钳位模块;Optionally, the power converter further includes a clamping module, and both ends of the second resistor are connected in parallel with the clamping module;
所述钳位模块用于:在所述开关管导通时,将所述第一电阻与所述第二 电阻之间的节点电压钳位于钳位电压,所述钳位电压与0V电压相匹配。The clamping module is used to clamp the node voltage between the first resistor and the second resistor to a clamping voltage when the switch tube is turned on, and the clamping voltage matches the 0V voltage .
根据本发明的第二方面,提供了一种电流比较反馈电路,包括:电流复制单元、第一镜像单元、第二镜像单元、参考维持单元与输出单元;所述电流复制单元连接待测电路,所述第一镜像单元与所述第二镜像单元连接所述电流复制单元,所述参考维持单元连接所述第一镜像单元,所述输出单元的输入侧连接所述参考维持单元与所述第二镜像单元之间的反馈节点;According to a second aspect of the present invention, a current comparison feedback circuit is provided, comprising: a current copy unit, a first mirror unit, a second mirror unit, a reference maintaining unit and an output unit; the current copy unit is connected to the circuit to be tested, The first mirror unit and the second mirror unit are connected to the current copy unit, the reference maintaining unit is connected to the first mirror unit, and the input side of the output unit is connected to the reference maintaining unit and the first mirror unit. Feedback node between two mirror elements;
所述电流复制单元用于:采集待测电路在第一时段的第一电流与第二时段的第二电流;The current copying unit is used for: collecting the first current of the circuit under test in the first period and the second current in the second period;
所述第一镜像单元用于:在所述第一时段,镜像所述电流复制单元复制到的第一电流,并形成中间电流;所述中间电流关联于所述第一电流对应的第一镜像电流;The first mirror unit is configured to: in the first period, mirror the first current copied by the current copy unit to form an intermediate current; the intermediate current is associated with a first mirror corresponding to the first current current;
所述参考维持单元用于:在所述第一时段,形成与所述中间电流相匹配的参考电流,并在所述第二时段,维持所述参考电流不变;The reference maintaining unit is used for: forming a reference current matching the intermediate current in the first period, and maintaining the reference current unchanged in the second period;
所述第二镜像单元用于:在所述第二时段,镜像所述电流复制单元复制到的第二电流,并形成所述第二电流对应的第二镜像电流;The second mirroring unit is configured to: in the second period, mirror the second current copied by the current copying unit, and form a second mirror current corresponding to the second current;
所述输出单元用于:在所述第二时段,获取所述第二镜像电流与所述参考电流的比较结果,并根据所述第二镜像电流与所述参考电流的比较结果,向控制模块发出反馈信号。The output unit is configured to: in the second period, obtain a comparison result between the second mirror current and the reference current, and report to the control module according to the comparison result between the second mirror current and the reference current Send a feedback signal.
可选的,所述第一镜像单元包括第一P沟道MOS管、第一N沟道MOS管、至少一个开关与第一电流源;所述至少一个开关包括第一开关和/或第二开关;Optionally, the first mirror unit includes a first P-channel MOS transistor, a first N-channel MOS transistor, at least one switch and a first current source; the at least one switch includes a first switch and/or a second switch;
所述第一P沟道MOS管的源极与栅极连接所述电流复制单元,所述第一P沟道MOS管的漏极直接或通过所述第一开关连接所述第一N沟道MOS管的漏极,所述第一N沟道MOS管的源极接地,所述第一N沟道MOS管的栅极直接或通过所述第二开关连接所述参考维持单元,所述第一N沟道MOS管的栅极还连接所述第一N沟道MOS管的漏极;所述第一P沟道MOS管的漏极还直接或间接连接所述第一电流源的输入侧,所述第一电流源的输出侧接地;所述至少一个开关连接控制模块;The source and gate of the first P-channel MOS transistor are connected to the current replication unit, and the drain of the first P-channel MOS transistor is connected to the first N-channel directly or through the first switch The drain of the MOS transistor, the source of the first N-channel MOS transistor is grounded, the gate of the first N-channel MOS transistor is connected to the reference maintaining unit directly or through the second switch, and the first N-channel MOS transistor is connected to the reference maintaining unit. The gate of an N-channel MOS transistor is also connected to the drain of the first N-channel MOS transistor; the drain of the first P-channel MOS transistor is also directly or indirectly connected to the input side of the first current source , the output side of the first current source is grounded; the at least one switch is connected to the control module;
其中:in:
在所述第一时段且所述至少一个开关均导通时所述第一P沟道MOS管 的电流为所述第一电流对应的第一镜像电流;In the first period and when the at least one switch is turned on, the current of the first P-channel MOS transistor is the first mirror current corresponding to the first current;
在所述第一时段且所述至少一个开关均导通时所述第一N沟道MOS管的电流为所述中间电流。During the first period and when the at least one switch is turned on, the current of the first N-channel MOS transistor is the intermediate current.
可选的,所述参考维持单元包括储能器件与第二N沟道MOS管,所述储能器件的第一端分别连接所述第一镜像单元与所述第二N沟道MOS管的栅极,所述第二N沟道MOS管的源极接地,所述第二N沟道MOS管的漏极连接所述第二镜像单元;Optionally, the reference maintaining unit includes an energy storage device and a second N-channel MOS transistor, and a first end of the energy storage device is respectively connected to the first mirror unit and the second N-channel MOS transistor. a gate, the source of the second N-channel MOS transistor is grounded, and the drain of the second N-channel MOS transistor is connected to the second mirror unit;
所述储能器件用于:The energy storage device is used for:
在所述第一镜像单元形成所述中间电流时,获取对应的储能电流,并储能形成维持电压;在所述第一镜像单元未形成所述中间电流时,利用所述维持电压为所述第二N沟道MOS管的栅极供电;When the first mirror unit forms the intermediate current, obtain the corresponding energy storage current, and store energy to form a maintenance voltage; when the first mirror unit does not form the intermediate current, use the maintenance voltage as the supplying power to the gate of the second N-channel MOS transistor;
其中,所述第二N沟道MOS管的电流为所述参考电流;Wherein, the current of the second N-channel MOS transistor is the reference current;
所述第一镜像单元形成所述中间电流时,所述参考电流是所述中间电流的镜像电流;When the first mirror unit forms the intermediate current, the reference current is a mirror current of the intermediate current;
所述第一镜像单元未形成所述中间电流时,所述参考电流是所述维持电压对所述第二N沟道MOS管栅极的供电形成的。When the first mirror unit does not form the intermediate current, the reference current is formed by supplying power to the gate of the second N-channel MOS transistor by the sustain voltage.
可选的,所述第二镜像单元包括第二P沟道MOS管,所述第二P沟道MOS管的源极与栅极连接所述电流复制单元,所述第二P沟道MOS管的漏极连接所述参考维持单元;Optionally, the second mirroring unit includes a second P-channel MOS transistor, the source and gate of the second P-channel MOS transistor are connected to the current replication unit, and the second P-channel MOS transistor is The drain is connected to the reference sustain unit;
其中:in:
所述第一时段时所述第二P沟道MOS管的电流为所述第一电流对应的第一镜像电流;The current of the second P-channel MOS transistor during the first period is the first mirror current corresponding to the first current;
所述第二时段时所述第二P沟道MOS管的电流为所述第二电流对应的第二镜像电流。During the second period, the current of the second P-channel MOS transistor is a second mirror current corresponding to the second current.
可选的,所述输出单元包括第一反相器与第二反相器,所述第一反相器的输入端连接所述反馈节点,所述第一反相器的输出端连接所述第二反相器的输入端,所述第二反相器的输出端连接控制模块。Optionally, the output unit includes a first inverter and a second inverter, the input end of the first inverter is connected to the feedback node, and the output end of the first inverter is connected to the feedback node. The input end of the second inverter, and the output end of the second inverter is connected to the control module.
可选的,所述电流复制单元包括第二电流源、第一三极管、第二三极管与第三P沟道MOS管;所述第一三极管为NPN管,所述第二三极管为PNP管;Optionally, the current replication unit includes a second current source, a first transistor, a second transistor and a third P-channel MOS transistor; the first transistor is an NPN transistor, and the second transistor is an NPN transistor. The triode is a PNP tube;
所述第一三极管的发射极直接或间接连接所述待测电路,所述第一三极管的集电极连接所述第三P沟道MOS管的漏极,所述第一三极管的基极连接所述第二三极管的集电极,所述第二三极管的发射极接地,所述第二三极管的基极与发射极互相连接,所述第三P沟道MOS管的源极还连接所述第二电流源的输入侧,所述第二电流源的输出侧连接所述第二三极管的集电极;The emitter of the first triode is directly or indirectly connected to the circuit to be tested, the collector of the first triode is connected to the drain of the third P-channel MOS transistor, and the first triode is connected to the drain of the third P-channel MOS transistor. The base of the transistor is connected to the collector of the second triode, the emitter of the second triode is grounded, the base and the emitter of the second triode are connected to each other, and the third P-channel The source of the channel MOS transistor is also connected to the input side of the second current source, and the output side of the second current source is connected to the collector of the second triode;
所述第三P沟道MOS管的源极和栅极连接所述第一镜像单元与所述第二镜像单元,以使得:所述第一镜像单元与所述第二镜像单元能够镜像所述第三P沟道MOS管的电流,得到对应的镜像电流。The source and gate of the third P-channel MOS transistor are connected to the first mirror unit and the second mirror unit, so that the first mirror unit and the second mirror unit can mirror the The current of the third P-channel MOS transistor obtains the corresponding mirror current.
本发明提供的电源变换器中,充分考虑了辅助绕组所串联的第一电阻的电流与开关管源漏电压的关联性,以所维持的参考电压为依据,准确检测了第一电阻的在开关管关断后的第二电流是否下降并到达了开关管未关断时的第一电流,进而,以此检测结果可对应表征出开关管的源漏电压是否过零。可见,本发明无需直接检测开关管,避免了检测部分功率损耗较大的问题,以较低的功率损耗实现了检测。In the power converter provided by the present invention, the correlation between the current of the first resistor connected in series with the auxiliary winding and the source-drain voltage of the switch tube is fully considered, and based on the maintained reference voltage, the on-switch of the first resistor is accurately detected. Whether the second current after the tube is turned off drops and reaches the first current when the switch tube is not turned off, and further, the detection result can correspond to whether the source-drain voltage of the switch tube crosses zero. It can be seen that the present invention does not need to directly detect the switch tube, avoids the problem of large power loss in the detection part, and realizes detection with lower power loss.
同时,在本发明提供的电源变换器与电流比较反馈电路中,基于参考电压,本发明开创性地实现了一个时段(例如第一时段、开关管处于导通状态的时段)下待测电路电流与另一个时段(例如第二时段、开关管处于关断状态的时段)下待测电路电流之间的比较。At the same time, in the power converter and the current comparison feedback circuit provided by the present invention, based on the reference voltage, the present invention creatively realizes the current of the circuit to be measured under a period (for example, the first period, the period when the switch tube is in a conducting state) Comparison with the current of the circuit to be tested in another period (eg, the second period, the period when the switch is in the off state).
针对于此,现有相关技术中,为了实现不同时段电流的比较,需先对某一时段的电流进行检测,再以数字形式存储在控制模块的存储器中,再在检测到另一时段的电流后调取所存储的信息,该方式需占用控制模块的内存、程序资源,还会增加控制模块的处理负担与处理流程,影响处理效率。相较而言,在本发明中,控制模块仅需获取检测结果,有效简化了其处理负担与处理流程,节约了内存、程序资源,还可有助于提高处理效率。In view of this, in the prior art, in order to compare currents in different time periods, it is necessary to detect the currents of a certain period of time, and then store them in the memory of the control module in digital form, and then detect the currents of another period of time. After retrieving the stored information, this method needs to occupy the memory and program resources of the control module, and also increases the processing burden and processing flow of the control module, which affects the processing efficiency. In contrast, in the present invention, the control module only needs to obtain the detection result, which effectively simplifies the processing burden and processing flow, saves memory and program resources, and also helps to improve processing efficiency.
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。In order to explain the embodiments of the present invention or the technical solutions in the prior art more clearly, the following briefly introduces the accompanying drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention, and for those of ordinary skill in the art, other drawings can also be obtained from these drawings without any creative effort.
图1是本发明一实施例中电源变换器的电路构造示意图一;1 is a schematic diagram 1 of a circuit structure of a power converter in an embodiment of the present invention;
图2是本发明一实施例中电源变换器的电路构造示意图二;2 is a schematic diagram 2 of the circuit structure of the power converter in an embodiment of the present invention;
图3是本发明一实施例中电源变换器的电路构造示意图三;3 is a schematic diagram 3 of the circuit structure of the power converter in an embodiment of the present invention;
图4是本发明一实施例中电源变换器的电路示意图;4 is a schematic circuit diagram of a power converter in an embodiment of the present invention;
图5是本发明一实施例中电源变换器的电信号比对示意图;5 is a schematic diagram of electrical signal comparison of a power converter in an embodiment of the present invention;
图6是本发明一实施例中电源变换器的电路构造示意图五;6 is a schematic diagram 5 of the circuit structure of a power converter in an embodiment of the present invention;
图7是本发明一实施例中电流比较反馈电路的构造示意图一;7 is a schematic diagram 1 of the structure of a current comparison feedback circuit in an embodiment of the present invention;
图8是本发明一实施例中电流比较反馈电路的构造示意图二;8 is a second structural schematic diagram of a current comparison feedback circuit in an embodiment of the present invention;
图9是本发明一实施例中电流比较反馈电路、第一电阻、第二电阻与辅助绕组的电路示意图;9 is a schematic circuit diagram of a current comparison feedback circuit, a first resistor, a second resistor and an auxiliary winding according to an embodiment of the present invention;
图10是本发明一实施例中电流比较反馈电路的构造示意图三;FIG. 10 is a third structural schematic diagram of a current comparison feedback circuit in an embodiment of the present invention;
图11是本发明一实施例中电流比较反馈电路的电路示意图。FIG. 11 is a schematic circuit diagram of a current comparison feedback circuit in an embodiment of the present invention.
附图标记说明:Description of reference numbers:
1-电流比较反馈电路;1- Current comparison feedback circuit;
11-第一镜像单元;11- the first mirror unit;
111-第一电流源;111 - the first current source;
12-第二镜像单元;12 - the second mirror unit;
13-电流复制单元;13- Current copy unit;
131-第二电流源;131 - the second current source;
14-参考维持单元;14 - Reference maintenance unit;
15-输出单元;15 - output unit;
2-开关管;2- switch tube;
3-控制模块;3- control module;
4-钳位模块;4- clamp module;
R1-第一电阻;R1 - the first resistance;
R2-第二电阻;R2 - the second resistance;
Na-辅助绕组;Na - auxiliary winding;
Np-原边绕组;Np-primary winding;
Ns-副边绕组;Ns - secondary winding;
D1-输出二极管;D1 - output diode;
D2-钳位二极管;D2 - clamp diode;
C1-输出电容;C1- output capacitor;
C2-输入电容;C2-input capacitance;
C3-储能电容;C3 - energy storage capacitor;
S1-开关管;S1-switch tube;
S2-钳位开关管;S2 - clamp switch tube;
PM1-第一P沟道MOS管;PM1-the first P-channel MOS tube;
PM2-第二P沟道MOS管;PM2- the second P-channel MOS tube;
PM3-第三P沟道MOS管;PM3-the third P-channel MOS tube;
K1-第一开关;K1 - the first switch;
K2-第二开关;K2 - the second switch;
K3-第三开关;K3 - the third switch;
NM1-第一N沟道MOS管;NM1 - the first N-channel MOS tube;
NM2-第二N沟道MOS管;NM2 - the second N-channel MOS tube;
A1-第一反相器;A1 - the first inverter;
A2-第二反相器;A2 - the second inverter;
Q1-第一三极管;Q1 - the first transistor;
Q2-第二三极管。Q2 - the second triode.
具体实施方式detailed description
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
本发明的说明书和权利要求书及上述附图中的术语“第一”、“第二”、“第三”“第四”等(如果存在)是用于区别类似的对象,而不必用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换,以便这里描述的本发明的实施例能够以除了在这里图示或描述的那些以外的顺序实施。此外,术语“包括”和“具有”以及他们的任何变形,意图在于覆盖不排他的包含,例如,包含了一系列步骤或单元的过程、方 法、系统、产品或设备不必限于清楚地列出的那些步骤或单元,而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其它步骤或单元。The terms "first", "second", "third", "fourth", etc. (if present) in the description and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to Describe a particular order or sequence. It is to be understood that the data so used may be interchanged under appropriate circumstances such that the embodiments of the invention described herein can be practiced in sequences other than those illustrated or described herein. Furthermore, the terms "comprising" and "having" and any variations thereof, are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those expressly listed Rather, those steps or units may include other steps or units not expressly listed or inherent to these processes, methods, products or devices.
下面以具体地实施例对本发明的技术方案进行详细说明。下面这几个具体的实施例可以相互结合,对于相同或相似的概念或过程可能在某些实施例不再赘述。The technical solutions of the present invention will be described in detail below with specific examples. The following specific embodiments may be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments.
请参考图1至图3,本发明实施例所提供的电源变换器中,包括:开关管2、变压器与用于控制所述开关管导通与关断的控制模块3,所述变压器包括输入侧的原边绕组Np、输出侧的副边绕组Ns,以及输出侧的辅助绕组Na,所述开关管2与所述原边绕组Np串联后连接于输入电源与地之间。Referring to FIGS. 1 to 3 , the power converter provided by the embodiment of the present invention includes: a switch tube 2 , a transformer, and a control module 3 for controlling the on and off of the switch tube, and the transformer includes an input The primary winding Np on the side, the secondary winding Ns on the output side, and the auxiliary winding Na on the output side, the switch tube 2 is connected in series with the primary winding Np and then connected between the input power supply and the ground.
其中的开关管2可以是MOS管,也可以是BJT管,具体举例中,开关管2可例如为NMOS管。若开关管2为NMOS,则,原边绕组Np可连接于开关管2的漏极,所述开关管2的源极可以经电阻接地。开关管2与原边绕组Np之间也可设有电阻、或其他器件。所述开关管2的控制端连接所述控制电路1,若开关管2为NMOS,则其控制端可以指其栅极。The switch tube 2 may be a MOS tube or a BJT tube. In a specific example, the switch tube 2 may be, for example, an NMOS tube. If the switch 2 is an NMOS, the primary winding Np can be connected to the drain of the switch 2 , and the source of the switch 2 can be grounded through a resistor. A resistor or other device may also be provided between the switch tube 2 and the primary winding Np. The control terminal of the switch tube 2 is connected to the control circuit 1. If the switch tube 2 is an NMOS, the control terminal of the switch tube 2 may refer to its gate.
以上所涉及的副边绕组Ns的数量可以为一个,也可以为多个,不论采用何种形式,均不脱离本发明实施例的范围。The number of secondary windings Ns involved above may be one or more, and no matter what form is adopted, it does not deviate from the scope of the embodiments of the present invention.
本发明实施例中,为了对开关管2的源漏电压进行检测,选择了对辅助绕组一侧进行检测,进而,电源变换器还包括:第一电阻R1、第二电阻R2与电流比较反馈电路1。In the embodiment of the present invention, in order to detect the source-drain voltage of the switch tube 2, one side of the auxiliary winding is selected to detect, and further, the power converter further includes: a first resistor R1, a second resistor R2 and a current comparison feedback circuit 1.
所述第一电阻R1的第一端连接至所述辅助绕组Na的第一端,所述第一电阻R1的第二端连接所述第二电阻R2的第一端,所述第二电阻R2的第二端连接至所述辅助绕组Na的第二端,所述辅助绕组Na的第二端接地(即第二电阻R2的第二端也接地);所述电流比较反馈电路1的一端连接所述第一电阻R1的第二端,所述电流比较反馈电路1的另一端连接所述控制模块3。The first end of the first resistor R1 is connected to the first end of the auxiliary winding Na, the second end of the first resistor R1 is connected to the first end of the second resistor R2, and the second resistor R2 The second end of the auxiliary winding Na is connected to the second end of the auxiliary winding Na, and the second end of the auxiliary winding Na is grounded (that is, the second end of the second resistor R2 is also grounded); one end of the current comparison feedback circuit 1 is connected to The second end of the first resistor R1 and the other end of the current comparison feedback circuit 1 are connected to the control module 3 .
请参考图2、图3与图4,所述的电源变换器,还可包括钳位模块4,所述第二电阻R2的两端并联所述钳位模块4;Please refer to FIG. 2 , FIG. 3 and FIG. 4 , the power converter may further include a clamping module 4 , and both ends of the second resistor R2 are connected in parallel with the clamping module 4 ;
所述钳位模块4用于:在所述开关管导通时,将所述第一电阻与所述第二电阻之间的节点电压钳位于钳位电压,所述钳位电压与0V电压相匹配。进而,可实现该功能的器件或器件的组合均可适用于实现钳位模块4。The clamping module 4 is used to clamp the node voltage between the first resistor and the second resistor to a clamping voltage when the switch tube is turned on, and the clamping voltage is in phase with the 0V voltage. match. Furthermore, any device or a combination of devices that can realize this function can be applied to realize the clamping module 4 .
一种举例中,如图3与图4所示意的,钳位模块4可以包括并联于第二电阻R2两端的钳位二极管D2,该钳位二极管的正极接地。在其他举例中,钳位模块4也可采用三极管或其他器件来实现。In an example, as shown in FIG. 3 and FIG. 4 , the clamping module 4 may include a clamping diode D2 connected in parallel with both ends of the second resistor R2 , and the anode of the clamping diode is grounded. In other examples, the clamping module 4 can also be implemented with triodes or other devices.
以下以钳位二极管D2为例说明钳位模块4的具体作用:The following takes the clamping diode D2 as an example to illustrate the specific function of the clamping module 4:
辅助绕组Na的输出接第一电阻R1、第二电阻R2分压,钳位二极管D2与第二电阻R2并联,这样当开关管2(亦即图4所示的开关管S1)导通时,V_sense端(即检测节点)电压通过钳位二极管D2嵌位到大约0V,进而,流过第一电阻R1的电流I1就和开关管的源漏电压Vds电压成比例关系,其可表征为:I1=(Vin-Vds)*(Na/Np)/R1;The output of the auxiliary winding Na is connected to the first resistor R1 and the second resistor R2 to divide the voltage, and the clamping diode D2 is connected in parallel with the second resistor R2, so that when the switch tube 2 (ie the switch tube S1 shown in FIG. 4 ) is turned on, The voltage of the V_sense terminal (ie the detection node) is clamped to about 0V through the clamping diode D2, and then the current I1 flowing through the first resistor R1 is proportional to the source-drain voltage Vds voltage of the switch tube, which can be characterized as: I1 =(Vin-Vds)*(Na/Np)/R1;
其中:in:
Vin为初级输入电压;Vin is the primary input voltage;
Na除了能标识辅助绕组,还可在公式中表征对应辅助绕组的线圈匝数;In addition to identifying the auxiliary winding, Na can also represent the number of turns of the corresponding auxiliary winding in the formula;
Np除了能标识原边绕组,还可在公式中表征对应原边绕组的线圈匝数;In addition to identifying the primary winding, Np can also represent the number of turns of the corresponding primary winding in the formula;
R1除了能标识第一电阻,还可在公式中表征对应第一电阻的阻值。In addition to identifying the first resistor, R1 can also represent the resistance value corresponding to the first resistor in the formula.
以上关系也可参照于图5所示意的波形理解。The above relationship can also be understood with reference to the waveforms shown in FIG. 5 .
在图5中,利用I_R1来表征前文所涉及的第一电阻R1的电流(即I1),利用V_sense来表征图2至图4所示的检测节点的电压,同时,其中还示意了针对于开关管S1的控制信号的波形图,以及钳位开关S2的控制信号的波形图。In FIG. 5 , I_R1 is used to characterize the current of the first resistor R1 (ie I1 ) mentioned above, and V_sense is used to characterize the voltage of the detection node shown in FIGS. 2 to 4 . The waveform diagram of the control signal of the tube S1, and the waveform diagram of the control signal of the clamp switch S2.
当开关管S1完全导通后的时候,Vds=0V,I1的电流为When the switch S1 is fully turned on, Vds=0V, and the current of I1 is
I1_S1_ON=(Vin-0)*(Na/Np)/R1I1_S1_ON=(Vin-0)*(Na/Np)/R1
当开关管S1完全断开后,当钳位开关S2对次级放电结束后,钳位开关S2也断开后,其主电感电流对开关管的电容进行放电,Vds慢慢从Vin+N*Vo下降到0V.When the switch S1 is completely disconnected, when the clamp switch S2 discharges the secondary, and the clamp switch S2 is also disconnected, its main inductor current discharges the capacitance of the switch, and Vds slowly changes from Vin+N* Vo drops to 0V.
I1_S1_OFF=(Vin-Vds)*(Na/Np)/R1I1_S1_OFF=(Vin-Vds)*(Na/Np)/R1
可知,当Vds=0时候,I1_S1_ON=I1_S1_OFF。因此,可检测出Vds下降到0V。It can be known that when Vds=0, I1_S1_ON=I1_S1_OFF. Therefore, it can be detected that Vds drops to 0V.
从中可以清晰地获悉第一电阻R1的电流、检测节点的电压V_sense、开关管S1与钳位开关S2之间的关系,其中,钳位开关S2是在开关管S1关断后打开的,并在开关管S1打开之前就关断了。若开关管S1与钳位开关S2 发生变化,对应的波形图也可能适应性发生变化,源漏电压Vds与第一电阻I_R1的关系可参照于图5所示的波形理解。From this, we can clearly learn the current of the first resistor R1, the voltage V_sense of the detection node, the relationship between the switch S1 and the clamping switch S2, wherein the clamping switch S2 is turned on after the switch S1 is turned off, and is The switch S1 is turned off before it is turned on. If the switch S1 and the clamping switch S2 change, the corresponding waveform diagram may also change adaptively. The relationship between the source-drain voltage Vds and the first resistor I_R1 can be understood with reference to the waveform shown in FIG. 5 .
此外,请参考图4,以上所涉及的钳位开关S2可与输入电容C2串联后并联于原边绕组Np的两端,钳位开关S2的控制端可连接控制模块3,以受其控制通断,进一步的,该钳位开关S2可以为NMOS。副边绕组Ns的第一端可连接输出二极管D1的正极,副边绕组Ns的第二端可连接输出电容C1的负极,输出二极管D1的负极可连接输出电容C1的正极。In addition, please refer to FIG. 4 , the clamp switch S2 mentioned above can be connected in series with the input capacitor C2 and then connected in parallel to both ends of the primary winding Np, and the control end of the clamp switch S2 can be connected to the control module 3 to be controlled by it Further, the clamping switch S2 can be an NMOS. The first end of the secondary winding Ns can be connected to the positive electrode of the output diode D1, the second end of the secondary winding Ns can be connected to the negative electrode of the output capacitor C1, and the negative electrode of the output diode D1 can be connected to the positive electrode of the output capacitor C1.
基于以上阐述可知,通过检测第一电阻R1的电流大小即可获悉源漏电压Vds的电压大小。本发明实施例针对于电流的检测提供了具体的实现方式,以下将着重对电流比较反馈模块进行阐述。Based on the above description, it can be known that the magnitude of the source-drain voltage Vds can be obtained by detecting the magnitude of the current of the first resistor R1 . The embodiments of the present invention provide a specific implementation manner for current detection, and the following will focus on the current comparison feedback module.
本发明实施例中,所述电流比较反馈电路1用于:In the embodiment of the present invention, the current comparison feedback circuit 1 is used for:
形成并维持住参考电流,所述参考电流是根据所述开关管处于导通状态时所述第一电阻的第一电流确定的;forming and maintaining a reference current, where the reference current is determined according to the first current of the first resistor when the switch is in an on state;
在所述开关管处于关断状态时,采集所述第一电阻的第二电流,并根据所述参考电流与所述第二电流的比较结果,向所述控制模块发送反馈信号,以利用所述反馈信号表征所述开关管的两端电压(即源漏电压Vds)是否进入目标区间,所述目标区间与0V电压相匹配。When the switch tube is in an off state, the second current of the first resistor is collected, and a feedback signal is sent to the control module according to the comparison result between the reference current and the second current, so as to use the The feedback signal indicates whether the voltage across the switch tube (ie, the source-drain voltage Vds) enters the target interval, and the target interval matches the 0V voltage.
其中,参考电流的维持,可以指维持参考电流完全保持不变或在一个较小的范围内浮动,其中,浮动的范围可根据实现电流维持的手段的精度而变化,只要该手段是旨在使其尽可能维持不变(或不发生较大变化)的,且所维持的电流是根据开关管导通时第一电阻的第一电流确定的,不论最终精度如何,浮动范围如何变化,都不脱离本发明实施例的范围。Among them, the maintenance of the reference current may refer to maintaining the reference current completely unchanged or floating within a small range, wherein the floating range may vary according to the precision of the means for achieving current maintenance, as long as the means are designed to make It remains unchanged (or does not change greatly) as much as possible, and the maintained current is determined according to the first current of the first resistor when the switch is turned on. No matter how the final accuracy is or how the floating range changes, it will not be affected. depart from the scope of the embodiments of the present invention.
其中的目标区间,可理解为用于判断源漏电压Vds是否过零的任意区间,例如可以指小于或等于0V的区间,此时,也可以指小于或等于预设值的区间,该预设值可以是大于0V且接近0V的一个预设值(例如10V)。亦可以是,与Vin电压相关的一个区间,例如10%*Vin,这样开关管的导通电压就可以随着Vin改变,实现更多功能。假如在220V供电的时候,其电压为
Figure PCTCN2020135476-appb-000001
The target interval can be understood as any interval used to determine whether the source-drain voltage Vds crosses zero, for example, it can refer to an interval less than or equal to 0V, and in this case, it can also refer to an interval less than or equal to a preset value. The value may be a preset value (eg, 10V) that is greater than 0V and close to 0V. It can also be an interval related to the Vin voltage, such as 10%*Vin, so that the on-voltage of the switch tube can be changed with Vin to achieve more functions. If it is powered by 220V, its voltage is
Figure PCTCN2020135476-appb-000001
根据图5的示意,在开关管S1关断时,可在检测到开关管S1的源漏电压Vds下降至过0V时控制开关管S1导通,由于源漏电压Vds与第一电阻的 电流I_R1的下降是较为同步的,进而,源漏电压Vds的过零,可对应于电流I_R1下降至开关管S1导通时的电流水平,故而,只要检测第一电阻的电流I_R1下降至开关管S1导通时的电流水平,即可理解为检测到了源漏电压Vds过零。According to the diagram of FIG. 5 , when the switch S1 is turned off, the switch S1 can be controlled to be turned on when it is detected that the source-drain voltage Vds of the switch S1 drops to over 0V, because the source-drain voltage Vds and the current I_R1 of the first resistor The decrease is relatively synchronous, and further, the zero-crossing of the source-drain voltage Vds can correspond to the current I_R1 dropping to the current level when the switch S1 is turned on. When the current level is on, it can be understood that the zero-crossing of the source-drain voltage Vds is detected.
对应于目标区间的不同实现方式,以上参考电流可以是与第一电流相同的,也可以是与第一电流具备固定差值的,该差值可对应表征出以上所述合计目标区间中预设值与0V之间的差距。Corresponding to different implementations of the target interval, the above reference current may be the same as the first current, or may have a fixed difference from the first current, and the difference may correspond to the above-mentioned aggregate target interval preset in the interval. The gap between the value and 0V.
以上所涉及的第一电流与第二电流可理解为不同时间的同一待测电路的电流(例如开关管导通时第一电阻的电流与关断时第一电阻的电流)。The above-mentioned first current and second current may be understood as the current of the same circuit under test at different times (eg, the current of the first resistor when the switch is on and the current of the first resistor when the switch is off).
以上方案中,充分考虑了辅助绕组所串联的第一电阻的电流与开关管源漏电压的关联性,以所维持的参考电压为依据,准确检测了第一电阻的在开关管关断后的第二电流是否下降并到达了开关管未关断时的第一电流,进而,以此检测结果可对应表征出开关管的源漏电压是否过零。可见,本发明无需直接检测开关管,避免了检测部分功率损耗较大的问题,以较低的功率损耗实现了检测。In the above scheme, the correlation between the current of the first resistor connected in series with the auxiliary winding and the source-drain voltage of the switch tube is fully considered, and based on the maintained reference voltage, the voltage of the first resistor after the switch tube is turned off is accurately detected. Whether the second current drops and reaches the first current when the switch tube is not turned off, and further, the detection result can correspond to whether the source-drain voltage of the switch tube crosses zero. It can be seen that the present invention does not need to directly detect the switch tube, avoids the problem of large power loss in the detection part, and realizes detection with lower power loss.
同时,基于参考电压,本发明开创性地实现了一个时段(例如第一时段、开关管处于导通状态的时段)下待测电路电流与另一个时段(例如第二时段、开关管处于关断状态的时段)下待测电路电流之间的比较。At the same time, based on the reference voltage, the present invention creatively realizes that the current of the circuit to be tested in one period (for example, the first period, the period when the switch is in the on state) is different from the current of the circuit to be tested in another period (for example, the second period, when the switch is off). The comparison between the currents of the circuit under test under the period of the state).
针对于此,现有相关技术中,为了实现不同时段电流的比较,需先对某一时段的电流进行检测,再以数字形式存储在控制模块的存储器中,再在检测到另一时段的电流后调取所存储的信息,该方式需占用控制模块的内存、程序资源,还会增加控制模块的处理负担与处理流程,影响处理效率。相较而言,在本发明中,控制模块仅需获取检测结果,有效简化了其处理负担与处理流程,节约了内存、程序资源,还可有助于提高处理效率。In view of this, in the prior art, in order to compare currents in different time periods, it is necessary to detect the currents of a certain period of time, and then store them in the memory of the control module in digital form, and then detect the currents of another period of time. After retrieving the stored information, this method needs to occupy the memory and program resources of the control module, and also increases the processing burden and processing flow of the control module, which affects the processing efficiency. In contrast, in the present invention, the control module only needs to obtain the detection result, which effectively simplifies the processing burden and processing flow, saves memory and program resources, and also helps to improve processing efficiency.
请参考图6,其中一种实施方式中,电源变换器中的电流比较反馈电路1,包括:电流复制单元13、第一镜像单元11、第二镜像单元12、参考维持单元14与输出单元15。Please refer to FIG. 6 , in one embodiment, the current comparison feedback circuit 1 in the power converter includes: a current copy unit 13 , a first mirror unit 11 , a second mirror unit 12 , a reference maintaining unit 14 and an output unit 15 .
所述电流复制单元13连接所述第一电阻R1的第二端(即连接第一电阻R1与第二电阻R2之间的节点),所述第一镜像单元11与所述第二镜像单元12连接所述电流复制单元13,所述参考维持单元14连接所述第一镜像单元 11,所述输出单元15的输入侧连接所述参考维持单元与所述第二镜像单元之间的反馈节点;The current replication unit 13 is connected to the second end of the first resistor R1 (ie, connected to the node between the first resistor R1 and the second resistor R2 ), the first mirror unit 11 and the second mirror unit 12 The current replication unit 13 is connected, the reference maintaining unit 14 is connected to the first mirroring unit 11, and the input side of the output unit 15 is connected to the feedback node between the reference maintaining unit and the second mirroring unit;
所述电流复制单元13用于:复制所述第一电流与所述第二电流;例如,可在开关管导通时,得到复制的第一电流,在开关管关断时,得到复制的第二电流;The current copying unit 13 is used to copy the first current and the second current; for example, when the switch is turned on, the copied first current can be obtained, and when the switch is turned off, the copied first current can be obtained. two current;
所述第一镜像单元11用于:在所述开关管2处于导通状态时,镜像所述电流复制单元复制到的第一电流,并形成中间电流;所述中间电流关联于所述第一电流对应的第一镜像电流;该中间电流可例如与第一镜像电流相同,也可例如与第一镜像电流具有固定差值,还可例如:两者的差值不超出预设的差值范围。The first mirroring unit 11 is used to: when the switch tube 2 is in an on state, mirror the first current copied by the current copying unit, and form an intermediate current; the intermediate current is associated with the first current The first mirror current corresponding to the current; the intermediate current can be, for example, the same as the first mirror current, or it can have a fixed difference from the first mirror current, or, for example, the difference between the two does not exceed a preset difference range. .
所述参考维持单元14用于:在所述开关管2处于导通状态时,形成与所述中间电流相匹配的所述参考电流,并在所述开关管处于关断状态时,维持住所述参考电流;其中参考电流可以是与中间电流相同的,同时,也不排除两者具有固定差值,或差值不超出预设差值范围的实施方式。The reference maintaining unit 14 is used to: form the reference current matching the intermediate current when the switch tube 2 is in an on state, and maintain the reference current when the switch tube is in an off state Reference current; the reference current may be the same as the intermediate current, and at the same time, it does not exclude the implementation of a fixed difference between the two, or the difference does not exceed a preset difference range.
所述第二镜像单元12用于:在所述开关管2处于关断状态时,镜像所述电流复制单元复制到的第二电流,并形成所述第二电流对应的第二镜像电流;The second mirroring unit 12 is configured to: when the switch tube 2 is in an off state, mirror the second current copied by the current copying unit, and form a second mirror current corresponding to the second current;
所述输出单元15用于:在所述开关管2处于关断状态时,获取所述第二镜像电流与所述参考电流的比较结果,并根据所述第二镜像电流与所述参考电流的比较结果,发出所述反馈信号。The output unit 15 is configured to: when the switch tube 2 is in an off state, obtain a comparison result between the second mirror current and the reference current, and obtain a comparison result between the second mirror current and the reference current according to the difference between the second mirror current and the reference current. The results of the comparison are compared, and the feedback signal is issued.
进一步的,所述第一镜像单元连接所述控制模块(未在图中示意);Further, the first mirror unit is connected to the control module (not shown in the figure);
所述控制模块3还用于:The control module 3 is also used for:
在所述开关管2处于关断状态时,控制所述第一镜像单元11处于开路状态;When the switch tube 2 is in an off state, the first mirror unit 11 is controlled to be in an open state;
在所述开关管2处于导通状态时,控制所述第一镜像单元11处于导通状态,以使得处于导通状态的所述第一镜像单元才能够形成所述中间电流,即:仅在该状态下,第一镜像单元11才能够使得参考维持单元能够响应于中间电流而形成参考电流。When the switch tube 2 is in the on state, the first mirror unit 11 is controlled to be in the on state, so that the first mirror unit in the on state can form the intermediate current, that is, only when the first mirror unit is in the on state. Only in this state can the first mirror unit 11 enable the reference maintaining unit to form a reference current in response to the intermediate current.
为了实现以上功能,请参考图7,所述第一镜像单元11包括第一P沟道MOS管PM1、第一N沟道MOS管NM1、至少一个开关与第一电流源111;所述至少一个开关包括第一开关K1和/或第二开关K2;进一步可选方案中, 至少一个开关还可包括图9所示的与第一电流源111串联的第三开关K3。In order to realize the above functions, please refer to FIG. 7 , the first mirror unit 11 includes a first P-channel MOS transistor PM1 , a first N-channel MOS transistor NM1 , at least one switch and a first current source 111 ; the at least one The switches include a first switch K1 and/or a second switch K2; in a further optional solution, at least one switch may further include a third switch K3 shown in FIG. 9 in series with the first current source 111 .
其中第一P沟道MOS管PM1可例如与第二镜像单元12中的第二P沟道MOS管PM2、电流复制单元13中的第三P沟道MOS管PM3的尺寸相同,进而,可实现电流的镜像。The first P-channel MOS transistor PM1 can be, for example, the same size as the second P-channel MOS transistor PM2 in the second mirroring unit 12 and the third P-channel MOS transistor PM3 in the current copying unit 13, and further, it can be realized mirror image of the current.
所述第一P沟道MOS管PM1的源极与栅极连接所述电流复制单元13(例如可匹配连接第三P沟道MOS管PM3的源极与栅极),所述第一P沟道MOS管PM1的漏极直接或通过所述第一开关K1连接所述第一N沟道MOS管NM1的漏极,所述第一N沟道MOS管NM1的源极接地,所述第一N沟道MOS管NM1的栅极直接或通过所述第二开关K2连接所述参考维持单元14(例如可连接第二N沟道MOS管NM2的栅极与储能电容C3的第一端),所述第一N沟道MOS管NM1的栅极还连接所述第一N沟道MOS管NM1的漏极;所述第一P沟道MOS管PM1的漏极还直接或间接连接所述第一电流源111的输入侧(例如可直接或经第三开关K3连接第一电流源111的输入侧),所述第一电流源111的输出侧接地;所述至少一个开关连接所述控制模块3,进而,可在控制模块3的控制下通断。The source and gate of the first P-channel MOS transistor PM1 are connected to the current copy unit 13 (for example, the source and the gate of the third P-channel MOS transistor PM3 can be connected in a matched manner). The drain of the channel MOS transistor PM1 is connected to the drain of the first N-channel MOS transistor NM1 directly or through the first switch K1, the source of the first N-channel MOS transistor NM1 is grounded, and the first N-channel MOS transistor NM1 is connected to the ground. The gate of the N-channel MOS transistor NM1 is connected to the reference maintaining unit 14 directly or through the second switch K2 (for example, the gate of the second N-channel MOS transistor NM2 can be connected to the first end of the energy storage capacitor C3) , the gate of the first N-channel MOS transistor NM1 is also connected to the drain of the first N-channel MOS transistor NM1; the drain of the first P-channel MOS transistor PM1 is also directly or indirectly connected to the The input side of the first current source 111 (for example, the input side of the first current source 111 can be connected directly or via the third switch K3), the output side of the first current source 111 is grounded; the at least one switch is connected to the control The module 3 , in turn, can be switched on and off under the control of the control module 3 .
所述控制模块3控制所述第一镜像单元11处于开路状态时,具体用于:控制所述至少一个开关断开;When the control module 3 controls the first mirror unit 11 to be in an open state, it is specifically configured to: control the at least one switch to be disconnected;
所述控制模块3控制所述第一镜像单元11处于导通状态时,具体用于:控制所述至少一个开关导通;When the control module 3 controls the first mirror unit 11 to be in an on state, it is specifically configured to: control the at least one switch to be turned on;
其中:in:
所述开关管2处于导通状态且所述至少一个开关均导通时所述第一P沟道MOS管PM1的电流为所述第一电流对应的第一镜像电流;When the switch tube 2 is in an on state and the at least one switch is turned on, the current of the first P-channel MOS transistor PM1 is the first mirror current corresponding to the first current;
所述开关管2处于导通状态且所述至少一个开关均导通时所述第一N沟道MOS管NM1的电流为所述中间电流。The current of the first N-channel MOS transistor NM1 is the intermediate current when the switch transistor 2 is in an on state and the at least one switch is all on.
请参考图8,所述参考维持单元4包括储能器件(例如储能电容C3)与第二N沟道MOS管NM2,所述储能器件(例如储能电容C3)的第一端分别连接所述第一镜像单元11(例如其中第一N沟道MOS管NM1的栅极)与所述第二N沟道MOS管NM2的栅极,所述第二N沟道MOS管NM2的源极接地,所述第二N沟道MOS管NM2的漏极连接所述第二镜像单元(具体可连接其中的第二P沟道MOS管PM2)。Please refer to FIG. 8 , the reference maintaining unit 4 includes an energy storage device (eg, a storage capacitor C3 ) and a second N-channel MOS transistor NM2 , and the first ends of the energy storage device (eg, the storage capacitor C3 ) are respectively connected to The first mirror unit 11 (eg, the gate of the first N-channel MOS transistor NM1) and the gate of the second N-channel MOS transistor NM2, and the source of the second N-channel MOS transistor NM2 Grounding, the drain of the second N-channel MOS transistor NM2 is connected to the second mirror unit (specifically, it can be connected to the second P-channel MOS transistor PM2 therein).
其中,所述第一N沟道MOS管NM1与所述第二N沟道MOS管NM2是相同尺寸的,此时,所述第一N沟道MOS管NM1与所述第二N沟道MOS管NM2可形成镜像的电流。Wherein, the first N-channel MOS transistor NM1 and the second N-channel MOS transistor NM2 are of the same size, at this time, the first N-channel MOS transistor NM1 and the second N-channel MOS transistor NM1 Tube NM2 can form a mirrored current.
所述储能器件用于:The energy storage device is used for:
在所述第一镜像单元形成所述中间电流时,获取对应的储能电流,并储能形成维持电压;When the first mirror unit forms the intermediate current, obtain a corresponding energy storage current, and store energy to form a maintenance voltage;
在所述第一镜像单元未形成所述中间电流时,利用所述维持电压为所述第二N沟道MOS管的栅极供电。When the first mirror unit does not form the intermediate current, the gate of the second N-channel MOS transistor is powered by the sustain voltage.
其中的储能电流可例如是第一N沟道MOS管NM1的栅极电流。以上的维持电压可例如为第一N沟道MOS管NM1栅极与地之间的电压。其中的中间电流可例如是第一N沟道MOS管NM1的源漏电流。The energy storage current may be, for example, the gate current of the first N-channel MOS transistor NM1. The above maintenance voltage can be, for example, the voltage between the gate of the first N-channel MOS transistor NM1 and the ground. The intermediate current may be, for example, the source-drain current of the first N-channel MOS transistor NM1.
其中,所述第二N沟道MOS管NM2的电流即为前文所提及的参考电流;进而:Wherein, the current of the second N-channel MOS transistor NM2 is the reference current mentioned above; and then:
所述第一镜像单元11形成所述中间电流时,所述参考电流是所述中间电流的镜像电流;When the first mirror unit 11 forms the intermediate current, the reference current is a mirror current of the intermediate current;
所述第一镜像单元11未形成所述中间电流时,所述参考电流是所述维持电压对所述第二N沟道MOS管NM2栅极的供电形成的,由于储能器件的维持电压具有一定的稳定性,进而,可使得第二N沟道MOS管NM2栅极的电压能够维持住,对应的,第二N沟道MOS管NM2的源漏电流可维持在参考电流。When the first mirror unit 11 does not form the intermediate current, the reference current is formed by the power supply of the sustain voltage to the gate of the second N-channel MOS transistor NM2, because the sustain voltage of the energy storage device has With certain stability, the gate voltage of the second N-channel MOS transistor NM2 can be maintained, and correspondingly, the source-drain current of the second N-channel MOS transistor NM2 can be maintained at the reference current.
请参考图9,所述第二镜像单元12包括第二P沟道MOS管PM2,所述第二P沟道MOS管PM2的源极与栅极连接所述电流复制单元(例如匹配连接第三P沟道MOS管PM3的源极与栅极),所述第二P沟道MOS管PM2的漏极连接所述参考维持单元(例如其中第二N沟道MOS管NM2的漏极);Please refer to FIG. 9 , the second mirror unit 12 includes a second P-channel MOS transistor PM2, and the source and gate of the second P-channel MOS transistor PM2 are connected to the current replication unit (for example, matched to connect the third The source and gate of the P-channel MOS transistor PM3), the drain of the second P-channel MOS transistor PM2 is connected to the reference maintaining unit (for example, the drain of the second N-channel MOS transistor NM2);
其中:in:
所述开关管2处于导通状态时所述第二P沟道MOS管PM2的电流为所述第一电流对应的第一镜像电流;When the switch tube 2 is in an on state, the current of the second P-channel MOS tube PM2 is the first mirror current corresponding to the first current;
所述开关管2处于关断状态时所述第二P沟道MOS管PM2的电流为所述第二电流对应的第二镜像电流。When the switch transistor 2 is in an off state, the current of the second P-channel MOS transistor PM2 is a second mirror current corresponding to the second current.
结合以上第一镜像单元11、第二镜像单元12与参考维持单元14的电路 构造,以及图5所示的波形图与图4,可见:In conjunction with the circuit structure of the above first mirror unit 11, the second mirror unit 12 and the reference maintaining unit 14, and the waveform diagram shown in Figure 5 and Figure 4, it can be seen that:
t0-t1阶段,开关管S1导通,流过第一电阻R1的电流方向如图4所示;此时,第一电阻的电流I1=(Na/Np)*vin/R1,其为第一电流,可将这个电流(或转换成电压)保持后,以图7、图9为例,第一开关K1、第二开关K2、第三开关K3处于导通状态,流过第一电阻R1的电流(即第一电流)通过镜像流过第一P沟道MOS管PM1,减去一定值Idc(Idc可代表一个固定的电压值Vbias=Idc*R1)后流过第一N沟道MOS管NM1,其中的Idc可以是第一电流源111所提供的电流;其中的第二N沟道MOS管NM2和第一N沟道MOS管NM1也是镜像关系,流过第二N沟道MOS管NM2的电流为INM2=I1-Idc(此即为参考电流),在t1时刻,开关管S1、第一开关K1、第二开关K2、第三开关K3均受控断开,INM2通过储能电容C3保持。In the stage of t0-t1, the switch S1 is turned on, and the direction of the current flowing through the first resistor R1 is shown in Figure 4; After the current (or converted into a voltage) can be maintained, taking FIG. 7 and FIG. 9 as examples, the first switch K1, the second switch K2, and the third switch K3 are in the on state, and the first switch K1, the second switch K2, and the third switch K3 The current (ie, the first current) flows through the first P-channel MOS transistor PM1 by mirroring, and after subtracting a certain value Idc (Idc can represent a fixed voltage value Vbias=Idc*R1), it flows through the first N-channel MOS transistor NM1, where Idc may be the current provided by the first current source 111; the second N-channel MOS transistor NM2 and the first N-channel MOS transistor NM1 are also in a mirror relationship, and flow through the second N-channel MOS transistor NM2 The current is INM2=I1-Idc (this is the reference current). At time t1, the switch S1, the first switch K1, the second switch K2, and the third switch K3 are controlled to be disconnected, and INM2 passes through the energy storage capacitor C3. Keep.
t1-t2阶段,流过R1的电流方向与图4所示的方向相反,t2时刻开关管的源漏电压Vds降低到Vin,相应的检测节点的电压V_sense降为零,t2-t3时刻开关管的源漏电压Vds从Vin谐振下降,此时流过第一电阻R1的电流代表了谐振电压,电流通过另一个镜像源流过第二P沟道MOS管PM2,t3时刻当电流下降到INM2(即所维持住的参考电流),输出模块的输出信号可发生反转,给出信号驱动开关管S1,由于Idc代表的电压很低,如10V,所以此时开关管S1实现了ZVS(即过零检测的打开)。During the period of t1-t2, the direction of the current flowing through R1 is opposite to that shown in Figure 4. The source-drain voltage Vds of the switch tube decreases to Vin at the time of t2, and the voltage V_sense of the corresponding detection node drops to zero. At the time of t2-t3, the switch tube The source-drain voltage Vds drops from Vin resonance. At this time, the current flowing through the first resistor R1 represents the resonance voltage, and the current flows through the second P-channel MOS transistor PM2 through another mirror source. At t3, when the current drops to INM2 (ie The maintained reference current), the output signal of the output module can be reversed, and the signal is given to drive the switch S1. Since the voltage represented by Idc is very low, such as 10V, the switch S1 achieves ZVS (ie zero-crossing) at this time. detection is turned on).
本领域任意能将反馈节点的信号所表征的比较结果反馈至控制模块3的电路构造,均可作为输出单元15的一种举例。Any circuit structure in the art that can feed back the comparison result represented by the signal of the feedback node to the control module 3 can be used as an example of the output unit 15 .
在图9所示的一种举例中,所述输出单元15包括第一反相器A1与第二反相器A2,所述第一反相器A1的输入端连接所述反馈节点,所述第一反相器A1的输出端连接所述第二反相器A2的输入端,所述第二反相器A2的输出端连接所述控制模块3。In an example shown in FIG. 9 , the output unit 15 includes a first inverter A1 and a second inverter A2, the input end of the first inverter A1 is connected to the feedback node, the The output end of the first inverter A1 is connected to the input end of the second inverter A2 , and the output end of the second inverter A2 is connected to the control module 3 .
经两次反相后,可得到便于控制模块3识别的较为标准的电平信号。After two inversions, a relatively standard level signal that is convenient for the control module 3 to identify can be obtained.
本领域任意能复制第一电流与第二电流的电路构造,均可作为电流复制单元13的一种举例。Any circuit structure capable of replicating the first current and the second current in the art can be used as an example of the current replicating unit 13 .
在图9所示的一种举例中,所述电流复制单元13包括第二电流源131、第一三极管Q1、第二三极管Q2与第三P沟道MOS管PM3;所述第一三极管Q1为NPN管,所述第二三极管为PNP管。In an example shown in FIG. 9 , the current replication unit 13 includes a second current source 131, a first transistor Q1, a second transistor Q2 and a third P-channel MOS transistor PM3; A transistor Q1 is an NPN transistor, and the second transistor is a PNP transistor.
所述第一三极管Q1的发射极直接或间接连接所述第一电阻R1的第二端,所述第一三极管Q1的集电极连接所述第三P沟道MOS管PM3的漏极,所述第一三极管Q1的基极连接所述第二三极管Q2的集电极,所述第二三极管Q2的发射极接地,所述第二三极管Q2的基极与发射极互相连接,所述第三P沟道MOS管PM3的源极还连接所述第二电流源131的输入侧,所述第二电流源131的输出侧连接所述第二三极管Q2的集电极;The emitter of the first transistor Q1 is directly or indirectly connected to the second end of the first resistor R1, and the collector of the first transistor Q1 is connected to the drain of the third P-channel MOS transistor PM3 pole, the base of the first transistor Q1 is connected to the collector of the second transistor Q2, the emitter of the second transistor Q2 is grounded, and the base of the second transistor Q2 connected to the emitter, the source of the third P-channel MOS transistor PM3 is also connected to the input side of the second current source 131, and the output side of the second current source 131 is connected to the second triode Collector of Q2;
所述第三P沟道MOS管PM3的源极和栅极连接所述第一镜像单元11与所述第二镜像单元12,以使得:所述第一镜像单元11与所述第二镜像单元12能够镜像所述第三P沟道MOS管PM3的电流,得到对应的镜像电流。The source and gate of the third P-channel MOS transistor PM3 are connected to the first mirror unit 11 and the second mirror unit 12, so that: the first mirror unit 11 and the second mirror unit 12 can mirror the current of the third P-channel MOS transistor PM3 to obtain a corresponding mirror current.
第三P沟道沟道MOS管PM3与所述第一镜像单元11、所述第二镜像单元12的连接关系可参照于前文的描述与图9所示的电路理解。The connection relationship between the third P-channel channel MOS transistor PM3 and the first mirror unit 11 and the second mirror unit 12 can be understood with reference to the foregoing description and the circuit shown in FIG. 9 .
其中,第一三极管Q1和第二三极管Q2的电压近似相等。节点VMS的电压被钳位0V,因此当辅助绕组为负电压Vax的时候,IR1=Vax/R1,第三P沟道MOS管PM3的电流等于IR1的电流。其中的IR1为第一电阻R1的电流。The voltages of the first transistor Q1 and the second transistor Q2 are approximately equal. The voltage of the node VMS is clamped to 0V, so when the auxiliary winding is the negative voltage Vax, IR1=Vax/R1, and the current of the third P-channel MOS transistor PM3 is equal to the current of IR1. IR1 is the current of the first resistor R1.
在部分举例中,针对于图9所示电路,亦可去掉第一电流源111,改变第一N沟道MOS管NM1和第二N沟道MOS管NM2的镜像比例,例如10:9,则参考电流源电流大小为第一电流源的90%,即当开关管S1关闭后,Vds下降到10%*Vin的时候,可认为Vds下降到0。In some examples, for the circuit shown in FIG. 9, the first current source 111 can also be removed, and the mirror ratio of the first N-channel MOS transistor NM1 and the second N-channel MOS transistor NM2 can be changed, for example, 10:9, then The reference current source current is 90% of the first current source, that is, when the switch S1 is turned off and Vds drops to 10%*Vin, it can be considered that Vds drops to 0.
除了以上描述,请参考图10与图11,提供了一种电流比较反馈电路,其也可理解为:前文所涉及的电流比较反馈电路的应用场景不限于电源变换器时所形成的方案。不论应用于何种场景,均可实现不同时段的电流的比较与比较结果的反馈,也均可视作本发明实施例的一种实施方式。In addition to the above description, please refer to FIG. 10 and FIG. 11 , a current comparison feedback circuit is provided, which can also be understood as: the application scenarios of the current comparison feedback circuit mentioned above are not limited to the solutions formed when the power converter is used. No matter what kind of scenario is applied, the comparison of currents in different time periods and the feedback of the comparison results can be realized, which can also be regarded as an implementation of the embodiments of the present invention.
请参考图10与图11,电流比较反馈电路1包括:电流复制单元13、第一镜像单元11、第二镜像单元12、参考维持单元14与输出单元15;所述电流复制单元13连接待测电路,所述第一镜像单元11与所述第二镜像单元12连接所述电流复制单元13,所述参考维持单元14连接所述第一镜像单元11,所述输出单元15的输入侧连接所述参考维持单元14与所述第二镜像单元12之间的反馈节点;Please refer to FIG. 10 and FIG. 11 , the current comparison feedback circuit 1 includes: a current copy unit 13 , a first mirror unit 11 , a second mirror unit 12 , a reference maintaining unit 14 and an output unit 15 ; the current copy unit 13 is connected to the under-test circuit, the first mirror unit 11 and the second mirror unit 12 are connected to the current copy unit 13, the reference maintaining unit 14 is connected to the first mirror unit 11, and the input side of the output unit 15 is connected to the the feedback node between the reference maintaining unit 14 and the second mirroring unit 12;
所述电流复制单元13用于:采集待测电路在第一时段的第一电流与第二 时段的第二电流;The current copying unit 13 is used for: collecting the first current of the circuit under test in the first period and the second current in the second period;
所述第一镜像单元11用于:在所述第一时段,镜像所述电流复制单元复制到的第一电流,并形成中间电流;所述中间电流关联于所述第一电流对应的第一镜像电流;The first mirroring unit 11 is configured to: in the first period, mirror the first current copied by the current copying unit to form an intermediate current; the intermediate current is associated with the first current corresponding to the first current mirror current;
所述参考维持单元14用于:在所述第一时段,形成与所述中间电流相匹配的参考电流,并在所述第二时段,维持所述参考电流不变;The reference maintaining unit 14 is configured to: form a reference current matching the intermediate current during the first period, and maintain the reference current unchanged during the second period;
所述第二镜像单元12用于:在所述第二时段,镜像所述电流复制单元复制到的第二电流,并形成所述第二电流对应的第二镜像电流;The second mirror unit 12 is configured to: in the second period, mirror the second current copied by the current copy unit, and form a second mirror current corresponding to the second current;
所述输出单元15用于:在所述第二时段,获取所述第二镜像电流与所述参考电流的比较结果,并根据所述第二镜像电流与所述参考电流的比较结果,向控制模块发出反馈信号。The output unit 15 is configured to: in the second period of time, obtain a comparison result between the second mirror current and the reference current, and according to the comparison result between the second mirror current and the reference current, to control the The module sends out a feedback signal.
其中的待测电路可例如前文中第一电阻R1的电路,其中的第一时段可例如前文中开关管2导通时的时段,其中的第二时段可例如前文中开关管2管段时的时段。The circuit to be tested can be, for example, the circuit of the first resistor R1 mentioned above, the first period of time can be, for example, the period of time when the switch tube 2 is turned on, and the second period of time can be, for example, the period of time when the switch tube 2 is turned on. .
其中有关电流复制单元、第一镜像单元、第二镜像单元、参考维持单元与输出单元的任意描述与举例均可参照前文的描述理解,以下仅对部分描述进行重复的阐述。Any descriptions and examples of the current replication unit, the first mirror unit, the second mirror unit, the reference maintaining unit and the output unit can be understood with reference to the foregoing description, and only part of the description will be repeated below.
可选的,所述第一镜像单元11包括第一P沟道MOS管PM1、第一N沟道MOS管NM1、至少一个开关与第一电流源111;所述至少一个开关包括第一开关K1和/或第二开关K2;Optionally, the first mirroring unit 11 includes a first P-channel MOS transistor PM1, a first N-channel MOS transistor NM1, at least one switch and a first current source 111; the at least one switch includes a first switch K1 and/or the second switch K2;
所述第一P沟道MOS管PM1的源极与栅极连接所述电流复制单元13,所述第一P沟道MOS管PM1的漏极直接或通过所述第一开关K1连接所述第一N沟道MOS管NM1的漏极,所述第一N沟道MOS管NM1的源极接地,所述第一N沟道MOS管NM1的栅极直接或通过所述第二开关K2连接所述参考维持单元14,所述第一N沟道MOS管NM1的栅极还连接所述第一N沟道MOS管NM2的漏极;所述第一P沟道MOS管PM1的漏极还直接或间接连接所述第一电流源111的输入侧,所述第一电流源111的输出侧接地;所述至少一个开关连接控制模块;The source and gate of the first P-channel MOS transistor PM1 are connected to the current copying unit 13, and the drain of the first P-channel MOS transistor PM1 is connected to the first P-channel MOS transistor directly or through the first switch K1. The drain of an N-channel MOS transistor NM1, the source of the first N-channel MOS transistor NM1 is grounded, and the gate of the first N-channel MOS transistor NM1 is connected directly or through the second switch K2. In the reference maintaining unit 14, the gate of the first N-channel MOS transistor NM1 is also connected to the drain of the first N-channel MOS transistor NM2; the drain of the first P-channel MOS transistor PM1 is also directly connected Or indirectly connected to the input side of the first current source 111, and the output side of the first current source 111 is grounded; the at least one switch is connected to the control module;
其中:in:
在所述第一时段且所述至少一个开关均导通时所述第一P沟道MOS管 的电流为所述第一电流对应的第一镜像电流;In the first period and when the at least one switch is turned on, the current of the first P-channel MOS transistor is the first mirror current corresponding to the first current;
在所述第一时段且所述至少一个开关均导通时所述第一N沟道MOS管的电流为所述中间电流。During the first period and when the at least one switch is turned on, the current of the first N-channel MOS transistor is the intermediate current.
可选的,所述参考维持单元包括储能器件(例如储能电容C3)与第二N沟道MOS管NM2,所述储能器件的第一端分别连接所述第一镜像单元11与所述第二N沟道MOS管NM2的栅极,所述第二N沟道MOS管的源极接地,所述第二N沟道MOS管NM2的漏极连接所述第二镜像单元;Optionally, the reference maintaining unit includes an energy storage device (for example, an energy storage capacitor C3) and a second N-channel MOS transistor NM2, and the first end of the energy storage device is respectively connected to the first mirror unit 11 and the second N-channel MOS transistor. the gate of the second N-channel MOS transistor NM2, the source of the second N-channel MOS transistor is grounded, and the drain of the second N-channel MOS transistor NM2 is connected to the second mirror unit;
所述储能器件用于:The energy storage device is used for:
在所述第一镜像单元形成所述中间电流时,获取对应的储能电流,并储能形成维持电压;在所述第一镜像单元未形成所述中间电流时,利用所述维持电压为所述第二N沟道MOS管的栅极供电;When the first mirror unit forms the intermediate current, obtain the corresponding energy storage current, and store energy to form a maintenance voltage; when the first mirror unit does not form the intermediate current, use the maintenance voltage as the supplying power to the gate of the second N-channel MOS transistor;
其中,所述第二N沟道MOS管NM2的电流为所述参考电流;Wherein, the current of the second N-channel MOS transistor NM2 is the reference current;
所述第一镜像单元11形成所述中间电流时,所述参考电流是所述中间电流的镜像电流;When the first mirror unit 11 forms the intermediate current, the reference current is a mirror current of the intermediate current;
所述第一镜像单元11未形成所述中间电流时,所述参考电流是所述维持电压对所述第二N沟道MOS管栅极的供电形成的。When the first mirror unit 11 does not form the intermediate current, the reference current is formed by the power supply of the sustain voltage to the gate of the second N-channel MOS transistor.
可选的,所述第二镜像单元12包括第二P沟道MOS管PM2,所述第二P沟道MOS管PM2的源极与栅极连接所述电流复制单元13,所述第二P沟道MOS管PM2的漏极连接所述参考维持单元14;Optionally, the second mirroring unit 12 includes a second P-channel MOS transistor PM2, the source and gate of the second P-channel MOS transistor PM2 are connected to the current copying unit 13, and the second P-channel MOS transistor PM2 is connected to the current copying unit 13. The drain of the channel MOS transistor PM2 is connected to the reference maintaining unit 14;
其中:in:
所述第一时段时所述第二P沟道MOS管的电流为所述第一电流对应的第一镜像电流;The current of the second P-channel MOS transistor during the first period is the first mirror current corresponding to the first current;
所述第二时段时所述第二P沟道MOS管的电流为所述第二电流对应的第二镜像电流。During the second period, the current of the second P-channel MOS transistor is a second mirror current corresponding to the second current.
可选的,所述输出单元15包括第一反相器A1与第二反相器A2,所述第一反相器A1的输入端连接所述反馈节点,所述第一反相器A1的输出端连接所述第二反相器A2的输入端,所述第二反相器A2的输出端连接控制模块。Optionally, the output unit 15 includes a first inverter A1 and a second inverter A2, an input end of the first inverter A1 is connected to the feedback node, and an input end of the first inverter A1 is connected to the feedback node. The output end is connected to the input end of the second inverter A2, and the output end of the second inverter A2 is connected to the control module.
可选的,所述电流复制单元包括第二电流源131、第一三极管Q1、第二三极管Q2与第三P沟道MOS管PM3;所述第一三极管Q1为NPN管,所述第二三极管Q2为PNP管;Optionally, the current replication unit includes a second current source 131, a first transistor Q1, a second transistor Q2 and a third P-channel MOS transistor PM3; the first transistor Q1 is an NPN transistor , the second transistor Q2 is a PNP tube;
所述第一三极管Q1的发射极直接或间接连接所述待测电路,所述第一三极管Q1的集电极连接所述第三P沟道MOS管的漏极,所述第一三极管Q1的基极连接所述第二三极管Q2的集电极,所述第二三极管Q2的发射极接地,所述第二三极管Q2的基极与发射极互相连接,所述第三P沟道MOS管PM3的源极还连接所述第二电流源131的输入侧,所述第二电流源131的输出侧连接所述第二三极管Q2的集电极;The emitter of the first transistor Q1 is directly or indirectly connected to the circuit to be tested, the collector of the first transistor Q1 is connected to the drain of the third P-channel MOS transistor, and the first transistor Q1 is connected to the drain of the third P-channel MOS transistor. The base of the transistor Q1 is connected to the collector of the second transistor Q2, the emitter of the second transistor Q2 is grounded, and the base and the emitter of the second transistor Q2 are connected to each other, The source of the third P-channel MOS transistor PM3 is also connected to the input side of the second current source 131, and the output side of the second current source 131 is connected to the collector of the second transistor Q2;
所述第三P沟道MOS管PM3的源极和栅极连接所述第一镜像单元11与所述第二镜像单元12,以使得:所述第一镜像单元11与所述第二镜像单元12能够镜像所述第三P沟道MOS管的电流,得到对应的镜像电流。The source and gate of the third P-channel MOS transistor PM3 are connected to the first mirror unit 11 and the second mirror unit 12, so that: the first mirror unit 11 and the second mirror unit 12 can mirror the current of the third P-channel MOS transistor to obtain a corresponding mirror current.
最后应说明的是:以上各实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述各实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, but not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: The technical solutions described in the foregoing embodiments can still be modified, or some or all of the technical features thereof can be equivalently replaced; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the embodiments of the present invention. Scope.

Claims (16)

  1. 一种电源变换器,包括:开关管、变压器与用于控制所述开关管导通与关断的控制模块,所述变压器包括输入侧的原边绕组、输出侧的副边绕组,以及输出侧的辅助绕组,所述开关管与所述原边绕组串联后连接于输入电源与地之间,其特征在于,还包括:第一电阻、第二电阻与电流比较反馈电路;A power converter, comprising: a switch tube, a transformer and a control module for controlling the on and off of the switch tube, the transformer includes a primary winding on an input side, a secondary winding on an output side, and an output side The auxiliary winding of the switch tube is connected in series with the primary winding and then connected between the input power supply and the ground. It is characterized in that it also includes: a first resistor, a second resistor and a current comparison feedback circuit;
    所述第一电阻的第一端连接至所述辅助绕组的第一端,所述第一电阻的第二端连接所述第二电阻的第一端,所述第二电阻的第二端连接至所述辅助绕组的第二端,所述辅助绕组的第二端接地;所述电流比较反馈电路的一端连接所述第一电阻的第二端,所述电流比较反馈电路的另一端连接所述控制模块,所述控制模块还连接所述开关管的控制端;The first end of the first resistor is connected to the first end of the auxiliary winding, the second end of the first resistor is connected to the first end of the second resistor, and the second end of the second resistor is connected To the second end of the auxiliary winding, the second end of the auxiliary winding is grounded; one end of the current comparison feedback circuit is connected to the second end of the first resistor, and the other end of the current comparison feedback circuit is connected to the the control module, the control module is also connected to the control end of the switch tube;
    所述电流比较反馈电路用于:The current comparison feedback circuit is used to:
    形成并维持住参考电流,所述参考电流是根据所述开关管处于导通状态时所述第一电阻的第一电流确定的;forming and maintaining a reference current, where the reference current is determined according to the first current of the first resistor when the switch is in an on state;
    在所述开关管处于关断状态时,采集所述第一电阻的第二电流,并根据所述参考电流与所述第二电流的比较结果,向所述控制模块发送反馈信号,以利用所述反馈信号表征所述开关管的两端电压是否进入目标区间,所述目标区间与0V电压相匹配。When the switch tube is in an off state, the second current of the first resistor is collected, and a feedback signal is sent to the control module according to the comparison result between the reference current and the second current, so as to use the The feedback signal indicates whether the voltage across the switch tube enters the target interval, and the target interval matches the 0V voltage.
  2. 根据权利要求1所述的电源变换器,其特征在于,所述电流比较反馈电路包括:电流复制单元、第一镜像单元、第二镜像单元、参考维持单元与输出单元;所述电流复制单元连接所述第一电阻的第二端,所述第一镜像单元与所述第二镜像单元连接所述电流复制单元,所述参考维持单元连接所述第一镜像单元,所述输出单元的输入侧连接所述参考维持单元与所述第二镜像单元之间的反馈节点;The power converter according to claim 1, wherein the current comparison feedback circuit comprises: a current copy unit, a first mirror unit, a second mirror unit, a reference maintaining unit and an output unit; the current copy unit is connected to The second end of the first resistor, the first mirror unit and the second mirror unit are connected to the current copy unit, the reference maintaining unit is connected to the first mirror unit, the input side of the output unit connecting a feedback node between the reference maintaining unit and the second mirroring unit;
    所述电流复制单元用于:复制所述第一电流与所述第二电流;The current copying unit is used for: copying the first current and the second current;
    所述第一镜像单元用于:在所述开关管处于导通状态时,镜像所述电流复制单元复制到的第一电流,并形成中间电流;所述中间电流关联于所述第一电流对应的第一镜像电流;The first mirroring unit is used for: mirroring the first current copied by the current copying unit when the switch tube is in an on state, and forming an intermediate current; the intermediate current is associated with the first current corresponding to the The first mirror current of ;
    所述参考维持单元用于:在所述开关管处于导通状态时,形成与所述中间电流相匹配的所述参考电流,并在所述开关管处于关断状态时,维持住所述参考电流;The reference maintaining unit is configured to: form the reference current matching the intermediate current when the switch is in an on state, and maintain the reference current when the switch is in an off state ;
    所述第二镜像单元用于:在所述开关管处于关断状态时,镜像所述电流复制单元复制到的第二电流,并形成所述第二电流对应的第二镜像电流;The second mirroring unit is used for: mirroring the second current copied by the current copying unit when the switch tube is in an off state, and forming a second mirror current corresponding to the second current;
    所述输出单元用于:在所述开关管处于关断状态时,获取所述第二镜像电流与所述参考电流的比较结果,并根据所述第二镜像电流与所述参考电流的比较结果,发出所述反馈信号。The output unit is configured to: when the switch tube is in an off state, obtain a comparison result between the second mirror current and the reference current, and obtain a comparison result between the second mirror current and the reference current according to the comparison result of the second mirror current and the reference current , and send out the feedback signal.
  3. 根据权利要求2所述的电源变换器,其特征在于,所述中间电流与所述第一镜像电流的差值为固定值。The power converter according to claim 2, wherein the difference between the intermediate current and the first mirror current is a fixed value.
  4. 根据权利要求3所述的电源变换器,其特征在于,所述第一镜像单元连接所述控制模块;The power converter according to claim 3, wherein the first mirror unit is connected to the control module;
    所述控制模块还用于:The control module is also used for:
    在所述开关管处于关断状态时,控制所述第一镜像单元处于开路状态;When the switch tube is in an off state, controlling the first mirror unit to be in an open state;
    在所述开关管处于导通状态时,控制所述第一镜像单元处于导通状态,以使得处于导通状态的所述第一镜像单元才能够形成所述中间电流。When the switch tube is in the on state, the first mirror unit is controlled to be in the on state, so that the first mirror unit in the on state can form the intermediate current.
  5. 根据权利要求4所述的电源变换器,其特征在于,所述第一镜像单元包括第一P沟道MOS管、第一N沟道MOS管、至少一个开关与第一电流源;所述至少一个开关包括第一开关和/或第二开关;The power converter according to claim 4, wherein the first mirror unit comprises a first P-channel MOS transistor, a first N-channel MOS transistor, at least one switch and a first current source; the at least one a switch includes a first switch and/or a second switch;
    所述第一P沟道MOS管的源极与栅极连接所述电流复制单元,所述第一P沟道MOS管的漏极直接或通过所述第一开关连接所述第一N沟道MOS管的漏极,所述第一N沟道MOS管的源极接地,所述第一N沟道MOS管的栅极直接或通过所述第二开关连接所述参考维持单元,所述第一N沟道MOS管的栅极还连接所述第一N沟道MOS管的漏极;所述第一P沟道MOS管的漏极还直接或间接连接所述第一电流源的输入侧,所述第一电流源的输出侧接地;所述至少一个开关连接所述控制模块;The source and gate of the first P-channel MOS transistor are connected to the current replication unit, and the drain of the first P-channel MOS transistor is connected to the first N-channel directly or through the first switch The drain of the MOS transistor, the source of the first N-channel MOS transistor is grounded, the gate of the first N-channel MOS transistor is connected to the reference maintaining unit directly or through the second switch, and the first N-channel MOS transistor is connected to the reference maintaining unit. The gate of an N-channel MOS transistor is also connected to the drain of the first N-channel MOS transistor; the drain of the first P-channel MOS transistor is also directly or indirectly connected to the input side of the first current source , the output side of the first current source is grounded; the at least one switch is connected to the control module;
    所述控制模块控制所述第一镜像单元处于开路状态时,具体用于:控制所述至少一个开关断开;When the control module controls the first mirror unit to be in an open state, it is specifically configured to: control the at least one switch to be disconnected;
    所述控制模块控制所述第一镜像单元处于导通状态时,具体用于:控制所述至少一个开关导通;When the control module controls the first mirror unit to be in an on state, it is specifically configured to: control the at least one switch to be turned on;
    其中:in:
    所述开关管处于导通状态且所述至少一个开关均导通时所述第一P沟道MOS管的电流为所述第一电流对应的第一镜像电流;The current of the first P-channel MOS transistor is the first mirror current corresponding to the first current when the switch transistor is in an on state and the at least one switch is all on;
    所述开关管处于导通状态且所述至少一个开关均导通时所述第一N沟道MOS管的电流为所述中间电流。The current of the first N-channel MOS transistor is the intermediate current when the switch transistor is in an on state and the at least one switch is all on.
  6. 根据权利要求2所述的电源变换器,其特征在于,所述参考维持单元包括储能器件与第二N沟道MOS管,所述储能器件的第一端分别连接所述第一镜像单元与所述第二N沟道MOS管的栅极,所述第二N沟道MOS管的源极接地,所述第二N沟道MOS管的漏极连接所述第二镜像单元;The power converter according to claim 2, wherein the reference maintaining unit comprises an energy storage device and a second N-channel MOS transistor, and the first ends of the energy storage device are respectively connected to the first mirror unit with the gate of the second N-channel MOS transistor, the source of the second N-channel MOS transistor is grounded, and the drain of the second N-channel MOS transistor is connected to the second mirror unit;
    所述储能器件用于:The energy storage device is used for:
    在所述第一镜像单元形成所述中间电流时,获取对应的储能电流,并储能形成维持电压;在所述第一镜像单元未形成所述中间电流时,利用所述维持电压为所述第二N沟道MOS管的栅极供电;When the first mirror unit forms the intermediate current, obtain the corresponding energy storage current, and store the energy to form a maintenance voltage; when the first mirror unit does not form the intermediate current, use the maintenance voltage as the supplying power to the gate of the second N-channel MOS transistor;
    其中,所述第二N沟道MOS管的电流为所述参考电流;Wherein, the current of the second N-channel MOS transistor is the reference current;
    所述第一镜像单元形成所述中间电流时,所述参考电流是所述中间电流的镜像电流;When the first mirror unit forms the intermediate current, the reference current is a mirror current of the intermediate current;
    所述第一镜像单元未形成所述中间电流时,所述参考电流是所述维持电压对所述第二N沟道MOS管栅极的供电形成的。When the first mirror unit does not form the intermediate current, the reference current is formed by supplying power to the gate of the second N-channel MOS transistor by the sustain voltage.
  7. 根据权利要求2至6任一项所述的电源变换器,其特征在于,所述第二镜像单元包括第二P沟道MOS管,所述第二P沟道MOS管的源极与栅极连接所述电流复制单元,所述第二P沟道MOS管的漏极连接所述参考维持单元;The power converter according to any one of claims 2 to 6, wherein the second mirror unit comprises a second P-channel MOS transistor, and the source and gate of the second P-channel MOS transistor connecting the current replication unit, and the drain of the second P-channel MOS transistor is connected to the reference maintaining unit;
    其中:in:
    所述开关管处于导通状态时所述第二P沟道MOS管的电流为所述第一电流对应的第一镜像电流;When the switch tube is in an on state, the current of the second P-channel MOS tube is a first mirror current corresponding to the first current;
    所述开关管处于关断状态时所述第二P沟道MOS管的电流为所述第二电流对应的第二镜像电流。When the switch transistor is in an off state, the current of the second P-channel MOS transistor is a second mirror current corresponding to the second current.
  8. 根据权利要求2至6任一项所述的电源变换器,其特征在于,所述输出单元包括第一反相器与第二反相器,所述第一反相器的输入端连接所述反馈节点,所述第一反相器的输出端连接所述第二反相器的输入端,所述第二反相器的输出端连接所述控制模块。The power converter according to any one of claims 2 to 6, wherein the output unit comprises a first inverter and a second inverter, and an input end of the first inverter is connected to the a feedback node, the output end of the first inverter is connected to the input end of the second inverter, and the output end of the second inverter is connected to the control module.
  9. 根据权利要求2至6任一项所述的电源变换器,其特征在于,所述电流复制单元包括第二电流源、第一三极管、第二三极管与第三P沟道MOS 管;所述第一三极管为NPN管,所述第二三极管为PNP管;The power converter according to any one of claims 2 to 6, wherein the current copy unit comprises a second current source, a first transistor, a second transistor and a third P-channel MOS transistor ; The first triode is an NPN tube, and the second triode is a PNP tube;
    所述第一三极管的发射极直接或间接连接所述第一电阻的第二端,所述第一三极管的集电极连接所述第三P沟道MOS管的漏极,所述第一三极管的基极连接所述第二三极管的集电极,所述第二三极管的发射极接地,所述第二三极管的基极与发射极互相连接,所述第三P沟道MOS管的源极还连接所述第二电流源的输入侧,所述第二电流源的输出侧连接所述第二三极管的集电极;The emitter of the first triode is directly or indirectly connected to the second end of the first resistor, the collector of the first triode is connected to the drain of the third P-channel MOS transistor, and the The base of the first triode is connected to the collector of the second triode, the emitter of the second triode is grounded, the base and the emitter of the second triode are connected to each other, the The source of the third P-channel MOS transistor is also connected to the input side of the second current source, and the output side of the second current source is connected to the collector of the second transistor;
    所述第三P沟道MOS管的源极和栅极连接所述第一镜像单元与所述第二镜像单元,以使得:所述第一镜像单元与所述第二镜像单元能够镜像所述第三P沟道MOS管的电流,得到对应的镜像电流。The source and gate of the third P-channel MOS transistor are connected to the first mirror unit and the second mirror unit, so that the first mirror unit and the second mirror unit can mirror the The current of the third P-channel MOS transistor obtains the corresponding mirror current.
  10. 根据权利要求1至6任一项所述的电源变换器,其特征在于,还包括钳位模块,所述第二电阻的两端并联所述钳位模块;The power converter according to any one of claims 1 to 6, further comprising a clamping module, and both ends of the second resistor are connected in parallel with the clamping module;
    所述钳位模块用于:在所述开关管导通时,将所述第一电阻与所述第二电阻之间的节点电压钳位于钳位电压,所述钳位电压与0V电压相匹配。The clamping module is used to clamp the node voltage between the first resistor and the second resistor to a clamping voltage when the switch tube is turned on, and the clamping voltage matches the 0V voltage .
  11. 一种电流比较反馈电路,其特征在于,包括:电流复制单元、第一镜像单元、第二镜像单元、参考维持单元与输出单元;所述电流复制单元连接待测电路,所述第一镜像单元与所述第二镜像单元连接所述电流复制单元,所述参考维持单元连接所述第一镜像单元,所述输出单元的输入侧连接所述参考维持单元与所述第二镜像单元之间的反馈节点;A current comparison feedback circuit, characterized in that it includes: a current copying unit, a first mirroring unit, a second mirroring unit, a reference maintaining unit and an output unit; the current copying unit is connected to a circuit to be tested, and the first mirroring unit The current replication unit is connected to the second mirror unit, the reference sustain unit is connected to the first mirror unit, and the input side of the output unit is connected to the reference sustain unit and the second mirror unit. feedback node;
    所述电流复制单元用于:采集待测电路在第一时段的第一电流与第二时段的第二电流;The current copying unit is used for: collecting the first current of the circuit under test in the first period and the second current in the second period;
    所述第一镜像单元用于:在所述第一时段,镜像所述电流复制单元复制到的第一电流,并形成中间电流;所述中间电流关联于所述第一电流对应的第一镜像电流;The first mirror unit is configured to: in the first period, mirror the first current copied by the current copy unit to form an intermediate current; the intermediate current is associated with a first mirror corresponding to the first current current;
    所述参考维持单元用于:在所述第一时段,形成与所述中间电流相匹配的参考电流,并在所述第二时段,维持所述参考电流不变;The reference maintaining unit is used for: forming a reference current matching the intermediate current in the first period, and maintaining the reference current unchanged in the second period;
    所述第二镜像单元用于:在所述第二时段,镜像所述电流复制单元复制到的第二电流,并形成所述第二电流对应的第二镜像电流;The second mirroring unit is configured to: in the second period, mirror the second current copied by the current copying unit, and form a second mirror current corresponding to the second current;
    所述输出单元用于:在所述第二时段,获取所述第二镜像电流与所述参考电流的比较结果,并根据所述第二镜像电流与所述参考电流的比较结果, 向控制模块发出反馈信号。The output unit is configured to: in the second period, obtain a comparison result between the second mirror current and the reference current, and report to the control module according to the comparison result between the second mirror current and the reference current Send a feedback signal.
  12. 根据权利要求11所述的电流比较反馈电路,其特征在于,所述第一镜像单元包括第一P沟道MOS管、第一N沟道MOS管、至少一个开关与第一电流源;所述至少一个开关包括第一开关和/或第二开关;The current comparison feedback circuit according to claim 11, wherein the first mirror unit comprises a first P-channel MOS transistor, a first N-channel MOS transistor, at least one switch and a first current source; the at least one switch includes a first switch and/or a second switch;
    所述第一P沟道MOS管的源极与栅极连接所述电流复制单元,所述第一P沟道MOS管的漏极直接或通过所述第一开关连接所述第一N沟道MOS管的漏极,所述第一N沟道MOS管的源极接地,所述第一N沟道MOS管的栅极直接或通过所述第二开关连接所述参考维持单元,所述第一N沟道MOS管的栅极还连接所述第一N沟道MOS管的漏极;所述第一P沟道MOS管的漏极还直接或间接连接所述第一电流源的输入侧,所述第一电流源的输出侧接地;所述至少一个开关连接控制模块;The source and gate of the first P-channel MOS transistor are connected to the current replication unit, and the drain of the first P-channel MOS transistor is connected to the first N-channel directly or through the first switch The drain of the MOS transistor, the source of the first N-channel MOS transistor is grounded, the gate of the first N-channel MOS transistor is connected to the reference maintaining unit directly or through the second switch, and the first N-channel MOS transistor is connected to the reference maintaining unit. The gate of an N-channel MOS transistor is also connected to the drain of the first N-channel MOS transistor; the drain of the first P-channel MOS transistor is also directly or indirectly connected to the input side of the first current source , the output side of the first current source is grounded; the at least one switch is connected to the control module;
    其中:in:
    在所述第一时段且所述至少一个开关均导通时所述第一P沟道MOS管的电流为所述第一电流对应的第一镜像电流;In the first period and when the at least one switch is turned on, the current of the first P-channel MOS transistor is the first mirror current corresponding to the first current;
    在所述第一时段且所述至少一个开关均导通时所述第一N沟道MOS管的电流为所述中间电流。During the first period and when the at least one switch is turned on, the current of the first N-channel MOS transistor is the intermediate current.
  13. 根据权利要求12所述的电流比较反馈电路,其特征在于,所述参考维持单元包括储能器件与第二N沟道MOS管,所述储能器件的第一端分别连接所述第一镜像单元与所述第二N沟道MOS管的栅极,所述第二N沟道MOS管的源极接地,所述第二N沟道MOS管的漏极连接所述第二镜像单元;The current comparison feedback circuit according to claim 12, wherein the reference maintaining unit comprises an energy storage device and a second N-channel MOS transistor, and the first ends of the energy storage device are respectively connected to the first mirror image the gate of the unit and the second N-channel MOS transistor, the source of the second N-channel MOS transistor is grounded, and the drain of the second N-channel MOS transistor is connected to the second mirror unit;
    所述储能器件用于:The energy storage device is used for:
    在所述第一镜像单元形成所述中间电流时,获取对应的储能电流,并储能形成维持电压;在所述第一镜像单元未形成所述中间电流时,利用所述维持电压为所述第二N沟道MOS管的栅极供电;When the first mirror unit forms the intermediate current, obtain the corresponding energy storage current, and store the energy to form a maintenance voltage; when the first mirror unit does not form the intermediate current, use the maintenance voltage as the supplying power to the gate of the second N-channel MOS transistor;
    其中,所述第二N沟道MOS管的电流为所述参考电流;Wherein, the current of the second N-channel MOS transistor is the reference current;
    所述第一镜像单元形成所述中间电流时,所述参考电流是所述中间电流的镜像电流;When the first mirror unit forms the intermediate current, the reference current is a mirror current of the intermediate current;
    所述第一镜像单元未形成所述中间电流时,所述参考电流是所述维持电压对所述第二N沟道MOS管栅极的供电形成的。When the first mirror unit does not form the intermediate current, the reference current is formed by supplying power to the gate of the second N-channel MOS transistor by the sustain voltage.
  14. 根据权利要求11至13任一项所述的电流比较反馈电路,其特征在 于,所述第二镜像单元包括第二P沟道MOS管,所述第二P沟道MOS管的源极与栅极连接所述电流复制单元,所述第二P沟道MOS管的漏极连接所述参考维持单元;The current comparison feedback circuit according to any one of claims 11 to 13, wherein the second mirror unit comprises a second P-channel MOS transistor, and the source and gate of the second P-channel MOS transistor the electrode is connected to the current replication unit, and the drain of the second P-channel MOS transistor is connected to the reference maintaining unit;
    其中:in:
    所述第一时段时所述第二P沟道MOS管的电流为所述第一电流对应的第一镜像电流;The current of the second P-channel MOS transistor during the first period is the first mirror current corresponding to the first current;
    所述第二时段时所述第二P沟道MOS管的电流为所述第二电流对应的第二镜像电流。During the second period, the current of the second P-channel MOS transistor is a second mirror current corresponding to the second current.
  15. 根据权利要求11至13任一项所述的电流比较反馈电路,其特征在于,所述输出单元包括第一反相器与第二反相器,所述第一反相器的输入端连接所述反馈节点,所述第一反相器的输出端连接所述第二反相器的输入端,所述第二反相器的输出端连接控制模块。The current comparison feedback circuit according to any one of claims 11 to 13, wherein the output unit comprises a first inverter and a second inverter, and an input end of the first inverter is connected to the the feedback node, the output end of the first inverter is connected to the input end of the second inverter, and the output end of the second inverter is connected to the control module.
  16. 根据权利要求11至13任一项所述的电流比较反馈电路,其特征在于,所述电流复制单元包括第二电流源、第一三极管、第二三极管与第三P沟道MOS管;所述第一三极管为NPN管,所述第二三极管为PNP管;The current comparison feedback circuit according to any one of claims 11 to 13, wherein the current replication unit comprises a second current source, a first transistor, a second transistor and a third P-channel MOS tube; the first triode is an NPN tube, and the second triode is a PNP tube;
    所述第一三极管的发射极连接所述待测电路,所述第一三极管的集电极连接所述第三P沟道MOS管的漏极,所述第一三极管的基极连接所述第二三极管的集电极,所述第一三极管的发射极接地,所述第三P沟道MOS管的源极还连接所述第二电流源的输入侧,所述第二电流源的输出侧连接所述第二三极管的集电极;The emitter of the first triode is connected to the circuit to be tested, the collector of the first triode is connected to the drain of the third P-channel MOS transistor, and the base of the first triode is connected to the drain of the third P-channel MOS transistor. The collector of the second transistor is connected to the collector, the emitter of the first transistor is grounded, and the source of the third P-channel MOS transistor is also connected to the input side of the second current source, so the output side of the second current source is connected to the collector of the second triode;
    所述第三P沟道MOS管的源极和栅极连接所述第一镜像单元与所述第二镜像单元,以使得:所述第一镜像单元与所述第二镜像单元能够镜像所述第三P沟道MOS管的电流,得到对应的镜像电流。The source and gate of the third P-channel MOS transistor are connected to the first mirror unit and the second mirror unit, so that the first mirror unit and the second mirror unit can mirror the The current of the third P-channel MOS transistor obtains the corresponding mirror current.
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