WO2022041189A1 - 光电探测器件、探测方法和电子设备 - Google Patents

光电探测器件、探测方法和电子设备 Download PDF

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WO2022041189A1
WO2022041189A1 PCT/CN2020/112454 CN2020112454W WO2022041189A1 WO 2022041189 A1 WO2022041189 A1 WO 2022041189A1 CN 2020112454 W CN2020112454 W CN 2020112454W WO 2022041189 A1 WO2022041189 A1 WO 2022041189A1
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photon avalanche
avalanche diodes
different
diodes
pixel
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PCT/CN2020/112454
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English (en)
French (fr)
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马亮亮
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深圳市大疆创新科技有限公司
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Priority to PCT/CN2020/112454 priority Critical patent/WO2022041189A1/zh
Priority to CN202080006501.4A priority patent/CN114450565A/zh
Publication of WO2022041189A1 publication Critical patent/WO2022041189A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter

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  • the present application generally relates to the field of detection technology, and more particularly to a photodetection device, a detection method and an electronic device.
  • Single Photon Avalanche Diode is a kind of avalanche photodiode (Avalanche Photodiode, APD for short) that works in Geiger mode.
  • APD avalanche photodiode
  • This APD forms a depletion layer in the region of extreme high field strength, where the carriers generated will be accelerated to carry enough kinetic energy to generate secondary charges through the process of impact ionization. In this way an absorbed photon can trigger a self-perpetuating ionization and subsequently enter a persistent avalanche state. Because of this property, SPAD has high sensitivity, and a single photon can be detected.
  • SPAD will encounter many problems when it is applied to the field of laser ranging.
  • ambient light such as noon outdoors
  • a large number of solar photons will be incident on the SPAD, which will cause the SPAD to be always in a saturated state.
  • there are some methods to improve the sensitivity of SPAD but these methods still cannot change the problem of SPAD saturation when the background light is relatively strong, so that the identification of effective signals cannot be realized.
  • the present application has been made in order to solve the above-mentioned problems.
  • the present application provides a photodetection device, a detection method, and an electronic device.
  • the solution proposed by the present application will be briefly described below, and more details will be described in the specific embodiments in conjunction with the accompanying drawings later.
  • a photodetection device comprising a pixel array, each pixel in the pixel array comprising a plurality of single-photon avalanche diodes, at least two of the plurality of single-photon avalanche diodes The sensitivity of the single-photon avalanche diodes is different.
  • a detection method includes: transmitting a sequence of optical pulses to detect a target scene; receiving a sequence of optical pulses reflected back by an object, and converting the sequence of optical pulses into electrical signals signal; determining the distance and/or azimuth of the object relative to the electronic device according to the electrical signal; wherein the receiving the optical pulse sequence reflected back by the object and converting the optical pulse sequence into an electrical signal are performed by photoelectric
  • the photodetection device includes a pixel array, each pixel in the pixel array includes a plurality of single-photon avalanche diodes, and the sensitivity of at least two single-photon avalanche diodes in the plurality of single-photon avalanche diodes different.
  • an electronic device including the above-mentioned photodetection device.
  • the photodetection device, the detection method, and the electronic device include a pixel array of single-photon avalanche diodes with different sensitivities, which expands the dynamic range of the single-photon avalanche diode, and can realize the characteristic of high sensitivity to detect weak signals , and can ensure that the single-photon avalanche diode is always in a non-saturated state to realize signal detection under strong background light, which solves the problem of outdoor use of the single-photon avalanche diode.
  • FIG. 1 shows a schematic diagram of an example of a conventional method for expanding the dynamic range of a SPAD.
  • FIG. 2 shows a Time of Flight (TOF for short) histogram of the method shown in FIG. 1 .
  • FIG. 3 shows a schematic diagram of another example of an existing method for expanding the dynamic range of a SPAD.
  • FIG. 4 shows a schematic diagram of the photosensitive surface of the sensor obtained by the method shown in FIG. 3 .
  • FIG. 5 shows a schematic diagram of the output waveform of the sensor obtained by the method shown in FIG. 3 .
  • FIG. 6 shows a schematic block diagram of a photodetection device according to an embodiment of the present application.
  • FIG. 7 shows a schematic diagram of an example of a photosensitive surface of a photodetection device according to an embodiment of the present application.
  • FIG. 8 shows a schematic diagram of another example of a photosensitive surface of a photodetection device according to an embodiment of the present application.
  • FIG. 9 shows a schematic diagram of yet another example of a photosensitive surface of a photodetection device according to an embodiment of the present application.
  • FIG. 10 shows a schematic flowchart of a detection method according to an embodiment of the present application.
  • FIG. 11 shows a schematic block diagram of an example of an electronic device according to an embodiment of the present application.
  • the significant advantage of SPAD is that its sensitivity is relatively high and it can detect extremely weak signals, but its dynamic range is very small, and it will continue to saturate when the incident light intensity is relatively strong, so it cannot realize the identification of effective signals.
  • FIG. 1 shows a schematic diagram of an example of a conventional method for expanding the dynamic range of a SPAD.
  • this method is generally a method of multiple sampling for statistics: the pulsed laser emits pulsed laser multiple times, and the detector at the receiving end collects noise and signals.
  • the arrival time of each sampling noise light is disordered, and it will be averaged to the entire time window after multiple sampling, and the effective echo signal is positively correlated with the distance D of the target object, and the signal light will be at the same time. arrive.
  • FIG. 2 shows a Time of Flight (TOF for short) histogram of the method shown in FIG. 1 .
  • the horizontal axis is the time stamp
  • the vertical axis is the number of pulses triggered in this time window.
  • the time and number of triggering of noise and signal are superimposed.
  • the signal is the same when sampling multiple times.
  • the statistically obtained peak value is very high, and the number of noise triggers at the bottom is random, which is averaged into each time window.
  • the time window where the signal peak is located is the arrival time of the target object.
  • This method can expand the dynamic range of SPAD. When no superposition is performed, SPAD has only two states, 0 and 1. After N averaging, the dynamic range can be expanded to 2 N times, but the corresponding single measurement requires N It takes a second pulse to complete.
  • FIG. 3 shows a schematic diagram of another example of an existing method for expanding the dynamic range of a SPAD.
  • this method is generally a method of using multiple SPADs in parallel: multiple SAPDs are formed into a pixel, and the outputs of the SPADs are connected in parallel with each other after series resistance.
  • This type of sensor is usually called a silicon photomultiplier (Silicon Photomultiplier). , referred to as SIPM) or multi-pixel photon counter (Multi-Pixel Photon Counter, referred to as MPPC).
  • SIPM silicon photomultiplier
  • MPPC multi-pixel photon counter
  • FIG. 4 shows a schematic diagram of the photosensitive surface of the sensor obtained by the method shown in FIG. 3 .
  • each pixel contains multiple SPADs, and the multiple SPADs included in each pixel are identical to each other, that is, the respective sensitivities of the multiple SPADs included in each pixel are the same of.
  • FIG. 5 shows a schematic diagram of the output waveform of the sensor obtained by the method shown in FIG. 3 .
  • 1 to 4 photons ie, photons 1 to 4
  • the output signals are different in amplitude.
  • the fundamental method of application of this type of device is similar to the above.
  • the noise is irregular in time.
  • the present application provides a photoelectric detection device, a detection method and an electronic device, which can realize a solution of detecting signal light based on SPAD under strong background light.
  • the following description will be made with reference to FIGS. 6 to 11 .
  • FIG. 6 shows a schematic block diagram of a photodetection device 600 according to an embodiment of the present application.
  • the photodetection device 600 includes a pixel array including a plurality of pixels 610(1), 610(2), ..., 610(i), ..., 610(j), ..., 610(n), where i, j, and n are natural numbers greater than one.
  • Each pixel includes a plurality of single-photon avalanche diodes SPAD(1) to SPAD(m), where m is a natural number greater than 1.
  • At least two single-photon avalanche diodes among the plurality of single-photon avalanche diodes SPAD( 1 ) to SPAD(m) included in each pixel have different sensitivities.
  • the photodetection device 600 since the sensitivity of at least two single-photon avalanche diodes in the single-photon avalanche diodes included in each pixel in the pixel array included in the photodetection device 600 is different, the photodetection device 600 has at least two types of single-photon avalanche diodes.
  • the detection of signals under strong background light can be realized in a non-saturated state all the time, thereby expanding the detection range of signal light by the single-photon avalanche diode as a whole, that is, expanding the dynamic range of the single-photon avalanche diode.
  • the sensitivities of at least two single-photon avalanche diodes in the single-photon avalanche diodes included in each pixel in the pixel array may be different through various implementations.
  • At least two single-photon avalanche diodes in the single-photon avalanche diodes included in each pixel in the pixel array have different photosensitive areas, so that at least two single-photon avalanche diodes in the single-photon avalanche diodes included in each pixel in the pixel array Photonic avalanche diodes have different sensitivities.
  • at least two of the single-photon avalanche diodes included in each pixel in the pixel array are different in size, such that at least two single-photon avalanche diodes included in each pixel in the pixel array are of different sizes. Diodes have different photosensitive areas.
  • the light-sensing surface of at least one single-photon avalanche diode in the single-photon avalanche diodes included in each pixel in the pixel array is blocked by the metal layer, so that at least two of the single-photon avalanche diodes included in each pixel in the pixel array are The photosensitive area of each single photon avalanche diode is different. It will be described below with reference to FIGS. 7 to 8 .
  • FIG. 7 shows a schematic diagram of an example of a photosensitive surface of a photodetection device 700 according to an embodiment of the present application.
  • a photodetection device 700 according to an embodiment of the present application includes a pixel array, each pixel in the pixel array includes a plurality of SPADs, and at least two SPADs in the plurality of SPADs have different sizes.
  • the sizes of SPAD(1) and SPAD(3) are different, so that the photosensitive areas of SPAD(1) and SPAD(3) are different; SPAD(2) ) is different in size from SPAD(4), so that the photosensitive area of SPAD(2) is different from SPAD4), and so on.
  • each pixel is composed of SPADs of different sizes, that is, each pixel is composed of SPADs with different photosensitive areas, so that each pixel has a photosensitive structure with different sensitivity, and a large-sized SPAD can be used to achieve high sensitivity detection, and the small size can be used for detection responsible for high dynamic range.
  • the plurality of single-photon avalanche diodes included in each pixel in the pixel array have at least two sizes, wherein a first size of the two sizes is larger than a preset size, and a first size of the two sizes The second size is smaller than the preset size.
  • the dimensions of SPAD(1) and SPAD(2) are the first dimension
  • the dimensions of SPAD(3) and SPAD(4) are the second dimension
  • the predetermined dimensions are, for example, as shown in FIG. 4 The size of the SPAD in each pixel.
  • the size of some SPADs in the plurality of SPADs included in each pixel is smaller than or equal to the predetermined size, and the size of some SPADs is greater than or equal to the predetermined size, which means that each Pixels include SPADs with different sensitivities, which can achieve high dynamic range detection while achieving high-sensitivity detection, and can make the overall photosensitive area of the entire pixel basically unchanged or change slightly, thus ensuring that the photosensitive ability of the entire pixel array is not affected.
  • FIG. 8 shows a schematic diagram of another example of a photosensitive surface of a photodetection device 800 according to an embodiment of the present application.
  • a photodetection device 800 according to an embodiment of the present application includes a pixel array, each pixel in the pixel array includes a plurality of SPADs, and at least one single-photon avalanche diode in the plurality of SPADs (eg, as shown in FIG. 8 )
  • the photosensitive surfaces of the shown SPADs (1) to SPAD (8) are blocked by the metal layer (wherein the area other than the black part in each SPAD is the blocked part, the black part is the part that can be photosensitive, and in each SPAD
  • the white box part is the visual effect generated by the drawing.
  • each SPAD the white box part and the gray part in each SPAD are integrated and belong to the blocked area), and the other single-photon avalanche diodes (such as shown in Figure 8)
  • the four all-black SPADs in the middle of the pixels are not blocked by the metal layer.
  • the photosensitive area of the SPAD blocked by the metal layer is smaller than that of the SPAD not blocked by the metal layer, so that each pixel includes SPADs with different photosensitive areas make each pixel have a photosensitive structure with different sensitivity, which can realize high dynamic range detection while realizing high sensitivity detection.
  • the photosensitive surfaces of at least two single-photon avalanche diodes in the plurality of single-photon avalanche diodes included in each pixel in the pixel array are shielded by the metal layer, and at least two single-photon avalanche diodes are shielded.
  • the area of the metal layer of the photosensitive surface of the diode is different.
  • the metal layers occluding SPAD(1), SPAD(2), SPAD(7), and SPAD(8) have a first area, while occluding SPAD(3), SPAD(4), SPAD( 5)
  • the metal layer of SPAD (6) has a second area, and the first area is not equal to the second area.
  • the photosensitive area (eg size) of these SPADs before being blocked is the same, then the pixel array can already be realized at this time.
  • At least two single-photon avalanche diodes in the plurality of single-photon avalanche diodes included in each pixel have different photosensitive areas, that is, a photosensitive structure in which each pixel has different sensitivities is realized.
  • the light-sensing surface of at least one single-photon avalanche diode among the plurality of single-photon avalanche diodes included in each pixel in the pixel array may be blocked by the metal layer so as to be different from other ones not covered by the metal layer.
  • the light-sensing area of the shielded single-photon avalanche diodes is different, or is different from that of other single-photon avalanche diodes shielded by metal layers with different areas.
  • the size can be the same, but the photosensitive area can be different, and the same size can obtain a relatively high consistency, which makes the process stability better.
  • the photosensitive surface of at least one single-photon avalanche diode among the plurality of single-photon avalanche diodes included in each pixel in the pixel array is blocked by a filter, so that each pixel in the pixel array includes The sensitivity of at least two of the single-photon avalanche diodes is different. It will be described below with reference to FIG. 9 .
  • FIG. 9 shows a schematic diagram of yet another example of a photosensitive surface of a photodetection device 900 according to an embodiment of the present application.
  • a photodetection device 900 according to an embodiment of the present application includes a pixel array, each pixel in the pixel array includes a plurality of SPADs, and at least one single-photon avalanche diode in the plurality of SPADs (eg, as shown in FIG. 9 )
  • the photosensitive surfaces of the shown SPADs (1) to SPAD (8)) are blocked by filters (the photosensitive surfaces of these SPADs appear non-black, i.e.
  • each pixel has a photosensitive structure with different sensitivities, and realizes detection with high dynamic range while achieving high-sensitivity detection.
  • the photosensitive surfaces of at least two single-photon avalanche diodes in the plurality of single-photon avalanche diodes included in each pixel in the pixel array are blocked by a filter, and at least two single-photon avalanche diodes are blocked.
  • the filter efficiency of the filter on the photosensitive surface of the avalanche diode is different.
  • the process parameters of at least two of the multiple single-photon avalanche diodes included in each pixel in the pixel array are different, so that the single-photon avalanche diodes included in each pixel in the pixel array have different process parameters.
  • the sensitivity of at least two of the single-photon avalanche diodes in the diode is different.
  • at least two of the multiple single-photon avalanche diodes included in each pixel in the pixel array are fabricated in different batches or under different process conditions (eg, doping, concentration, etc.).
  • the photodetection device includes a pixel array of single-photon avalanche diodes with different sensitivities, which expands the dynamic range of the single-photon avalanche diodes, and can not only realize the characteristics of high sensitivity to detect weak signals, It can also ensure that the single-photon avalanche diode is always in a non-saturated state to realize signal detection under strong background light, which can solve the problem of outdoor use of the single-photon avalanche diode.
  • the photodetection device may be implemented as a silicon photomultiplier tube or a multi-pixel photon counter.
  • FIG. 10 shows a schematic flowchart of a detection method 1000 according to an embodiment of the present application.
  • the detection method 1000 according to the embodiment of the present application may include the following steps:
  • step S1010 a sequence of light pulses is emitted to detect the target scene.
  • the photodetection device receives the light pulse sequence reflected back by the object, and converts the light pulse sequence into an electrical signal
  • the photodetection device includes a pixel array, and each pixel in the pixel array includes a plurality of single Photon avalanche diodes, at least two single-photon avalanche diodes in the plurality of single-photon avalanche diodes have different sensitivities.
  • step S1030 the distance and/or orientation of the object relative to the electronic device is determined according to the electrical signal.
  • step S1020 may be performed by using the photodetection devices according to the embodiments of the present application described above in conjunction with FIG. 6 to FIG. 9 .
  • the unique pixel array of single-photon avalanche diodes expands the dynamic range of single-photon avalanche diodes, which can not only detect weak signals with high sensitivity, but also ensure that the single-photon avalanche diodes are always in a non-saturated state to achieve under strong background light.
  • the detection of the signal solves the problem of outdoor use of the single-photon avalanche diode, so the detection method 1000 according to the embodiment of the present application based thereon can also achieve high-sensitivity detection and high-dynamic-range detection.
  • At least two single-photon avalanche diodes among the plurality of single-photon avalanche diodes included in each pixel in the pixel array of the photodetection device have different photosensitive areas.
  • At least two single-photon avalanche diodes among the plurality of single-photon avalanche diodes included in each pixel in the pixel array of the photodetection device have different sizes.
  • the plurality of single-photon avalanche diodes included in each pixel in the pixel array of the photodetection device have at least two sizes, wherein a first size of the two sizes is larger than a preset size, The second size of the two sizes is smaller than the preset size.
  • the photosensitive surface of at least one single-photon avalanche diode among the plurality of single-photon avalanche diodes included in each pixel in the pixel array of the photodetection device is shielded by a metal layer.
  • the photosensitive surfaces of at least two single-photon avalanche diodes in the plurality of single-photon avalanche diodes included in each pixel in the pixel array of the photodetection device are shielded by the metal layer, and the at least two single-photon avalanche diodes are shielded by the metal layer.
  • the areas of the metal layers of the photosensitive surfaces of the single-photon avalanche diodes are different.
  • each of the multiple single-photon avalanche diodes included in each pixel in the pixel array of the photodetection device has the same size.
  • the photosensitive surface of at least one single-photon avalanche diode among the plurality of single-photon avalanche diodes included in each pixel in the pixel array of the photodetection device is blocked by a filter.
  • the photosensitive surfaces of at least two single-photon avalanche diodes among the plurality of single-photon avalanche diodes included in each pixel in the pixel array of the photodetection device are blocked by a filter, and the at least two single-photon avalanche diodes are blocked by a filter.
  • the filtering efficiencies of the filters on the photosensitive surfaces of the two single-photon avalanche diodes are different.
  • the process parameters of at least two single-photon avalanche diodes among the plurality of single-photon avalanche diodes included in each pixel in the pixel array of the photodetection device are different.
  • At least two single-photon avalanche diodes among the plurality of single-photon avalanche diodes included in each pixel in the pixel array of the photodetection device are fabricated in different batches or under different process conditions.
  • the photodetection device is a silicon photomultiplier tube or a multi-pixel photon counter.
  • an electronic device may include the aforementioned photodetection device according to the embodiment of the present application.
  • the electronic device may be a lidar or a laser rangefinder.
  • the electronic device provided according to another aspect of the present application will be described below with reference to FIG. 11 .
  • FIG. 11 shows a schematic block diagram of an example of an electronic device 1100 according to an embodiment of the present application.
  • an electronic device 1100 according to an embodiment of the present application may include an emission module 1110 , a photodetection device 1120 and a calculation module 1130 .
  • the transmitting module 1110 can be used to transmit a sequence of optical pulses to detect the target scene; the photodetector device 1120 can be used to receive the sequence of optical pulses reflected by the object, and convert the sequence of optical pulses into electrical signals; the computing module 1130 can for determining the distance and/or orientation of the object relative to the electronic device according to the electrical signal.
  • the photodetection device 1120 may be the photodetection device according to the embodiments of the present application described above with reference to FIGS. 6 to 9 .
  • the photodetection device adopted by the electronic device 1100 includes a pixel array of single-photon avalanche diodes with different sensitivities, the dynamic range of the single-photon avalanche diodes is expanded, and the characteristics of high sensitivity to weak signals can be realized. For detection, it can also ensure that the single-photon avalanche diode is always in a non-saturated state to realize signal detection under strong background light, which solves the problem of outdoor use of the single-photon avalanche diode. Therefore, the electronic device 1100 including it can also achieve high sensitivity. Detecting at the same time to achieve high dynamic range detection.
  • Those skilled in the art can understand the structure and operation of the photodetection device used in the electronic device 1100 according to the embodiment of the present application in combination with the foregoing description, which is not repeated here for brevity.
  • the photodetection device, detection method, and electronic device include pixel arrays of single-photon avalanche diodes with different sensitivities, which expands the dynamic range of the single-photon avalanche diodes and can realize the characteristics of high sensitivity Detecting weak signals can also ensure that the single-photon avalanche diode is always in a non-saturated state to realize signal detection under strong background light, which solves the problem of outdoor use of the single-photon avalanche diode.
  • the disclosed apparatus and method may be implemented in other manners.
  • the device embodiments described above are only illustrative.
  • the division of the units is only a logical function division. In actual implementation, there may be other division methods.
  • multiple units or components may be combined or May be integrated into another device, or some features may be omitted, or not implemented.
  • Various component embodiments of the present application may be implemented in hardware, or in software modules running on one or more processors, or in a combination thereof.
  • a microprocessor or a digital signal processor (DSP) may be used in practice to implement some or all functions of some modules according to the embodiments of the present application.
  • DSP digital signal processor
  • the present application can also be implemented as a program of apparatus (eg, computer programs and computer program products) for performing part or all of the methods described herein.
  • Such a program implementing the present application may be stored on a computer-readable storage medium, or may be in the form of one or more signals. Such signals may be downloaded from Internet sites, or provided on carrier signals, or in any other form.

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Abstract

本申请提供一种光电探测器件、探测方法和电子设备，所述光电探测器件包括像素阵列，所述像素阵列中的每个像素包括多个单光子雪崩二极管，所述多个单光子雪崩二极管中至少两个单光子雪崩二极管的灵敏度不同。根据本申请实施例的光电探测器件、探测方法和电子设备包括具有不同灵敏度的单光子雪崩二极管的像素阵列，扩大了单光子雪崩二极管的动态范围，既能实现高灵敏度的特性对弱信号进行探测，又能保证单光子雪崩二极管始终处于非饱和状态实现在强背景光下对信号的探测，解决了单光子雪崩二极管的室外使用问题。

Description

光电探测器件、探测方法和电子设备
说明书
技术领域
本申请总体上涉及探测技术领域，更具体地涉及一种光电探测器件、探测方法和电子设备。
背景技术
单光子雪崩二极管(Single Photon Avalanche Diode，简称为SPAD)是一种工作在盖革模式下的雪崩光电二极管(Avalanche Photodiode，简称为APD)。这种APD在极限高场强区域形成耗尽层，在这里产生的载流子将被加速到携带足够的动能，通过碰撞电离的过程产生二次电荷。通过这种方式一个被吸收的光子可以触发一个自永续电离，随后进入持续雪崩状态。因为这种特性，SPAD具有很高的灵敏度，一个光子即有可能被探测到。
然而，SPAD在被应用到激光测距领域时会遇到很多问题，使用在有环境光存在如室外的正午时，会有大量的太阳光子入射到SPAD中，导致SPAD始终处在饱和状态，从而使SPAD无法测量有效信号。目前存在一些提高SPAD灵敏度的方法，但这些方法在背景光比较强的时候，仍然无法改变SPAD饱和的问题，从而无法实现对有效信号的识别。
发明内容
为了解决上述问题而提出了本申请。本申请提供一种光电探测器件、探测方法和电子设备。下面简要描述本申请提出的方案，更多细节将在后续结合附图在具体实施方式中加以描述。
根据本申请的一方面，提供了一种光电探测器件，所述器件包括像素阵列，所述像素阵列中的每个像素包括多个单光子雪崩二极管，所述多个单光子雪崩二极管中至少两个单光子雪崩二极管的灵敏度不同。
根据本申请的另一方面，提供了一种探测方法，所述探测方法包括：发射光脉冲序列，以探测目标场景；接收经物体反射回的光脉冲序列，将所 述光脉冲序列转成电信号；根据所述电信号确定所述物体相对所述电子设备的距离和/或方位；其中，所述接收经物体反射回的光脉冲序列以及将所述光脉冲序列转成电信号是由光电探测器件来执行的，所述光电探测器件包括像素阵列，所述像素阵列中的每个像素包括多个单光子雪崩二极管，所述多个单光子雪崩二极管中至少两个单光子雪崩二极管的灵敏度不同。
根据本申请的再一方面，提供了一种电子设备，所述电子设备包括上述光电探测器件。
根据本申请实施例的光电探测器件、探测方法和电子设备包括具有不同灵敏度的单光子雪崩二极管的像素阵列，扩大了单光子雪崩二极管的动态范围，既能实现高灵敏度的特性对弱信号进行探测，又能保证单光子雪崩二极管始终处于非饱和状态实现在强背景光下对信号的探测，解决了单光子雪崩二极管的室外使用问题。
附图说明
图1示出现有的扩大SPAD动态范围的方法的一个示例的示意图。
图2示出图1所示方法的飞行时间(Time of Flight，简称为TOF)直方图。
图3示出现有的扩大SPAD动态范围的方法的另一个示例的示意图。
图4示出图3所示方法得到的传感器的感光面的示意图。
图5示出图3所示方法得到的传感器的输出波形的示意图。
图6示出根据本申请实施例的光电探测器件的示意性框图。
图7示出根据本申请实施例的光电探测器件的感光面的一个示例的示意图。
图8示出根据本申请实施例的光电探测器件的感光面的另一个示例的示意图。
图9示出根据本申请实施例的光电探测器件的感光面的再一个示例的示意图。
图10示出根据本申请实施例的探测方法的示意性流程图。
图11示出根据本申请实施例的电子设备的一个示例的示意性框图。
具体实施方式
为了使得本申请的目的、技术方案和优点更为明显，下面将参照附图详细描述根据本申请的示例实施例。显然，所描述的实施例仅仅是本申请的一部分实施例，而不是本申请的全部实施例，应理解，本申请不受这里描述的示例实施例的限制。基于本申请中描述的本申请实施例，本领域技术人员在没有付出创造性劳动的情况下所得到的所有其它实施例都应落入本申请的保护范围之内。
在下文的描述中，给出了大量具体的细节以便提供对本申请更为彻底的理解。然而，对于本领域技术人员而言显而易见的是，本申请可以无需一个或多个这些细节而得以实施。在其他的例子中，为了避免与本申请发生混淆，对于本领域公知的一些技术特征未进行描述。
应当理解的是，本申请能够以不同形式实施，而不应当解释为局限于这里提出的实施例。相反地，提供这些实施例将使公开彻底和完全，并且将本申请的范围完全地传递给本领域技术人员。
在此使用的术语的目的仅在于描述具体实施例并且不作为本申请的限制。在此使用时，单数形式的“一”、“一个”和“所述/该”也意图包括复数形式，除非上下文清楚指出另外的方式。还应明白术语“组成”和/或“包括”，当在该说明书中使用时，确定所述特征、整数、步骤、操作、元件和/或部件的存在，但不排除一个或更多其它的特征、整数、步骤、操作、元件、部件和/或组的存在或添加。在此使用时，术语“和/或”包括相关所列项目的任何及所有组合。
为了彻底理解本申请，将在下列的描述中提出详细的步骤以及详细的结构，以便阐释本申请提出的技术方案。本申请的较佳实施例详细描述如下，然而除了这些详细描述外，本申请还可以具有其他实施方式。
SPAD作为一种比较新的光子检测器件，显著优势是灵敏度比较高能探测极弱的信号，但是其动态范围很小，在入射光强比较强时会持续饱和，无法实现对有效信号的识别。目前也存在一些方法提高SPAD的灵敏度，但是这些方法尚无法解决饱和问题。
图1示出现有的扩大SPAD动态范围的方法的一个示例的示意图。如图1所示，该方法总体上是多次采样进行统计的方法：由脉冲激光器多次 发射脉冲激光，接收端探测器将噪声和信号采集回来。但每次采样噪声光到达的时间是无序的，在多次采样后会平均到整个时间窗口中，而有效的回波信号是与目标物体的距离D正相关的，信号光将在同一时刻到达。
图2示出图1所示方法的飞行时间(Time of Flight，简称为TOF)直方图。如图2所示，横轴为时间戳，纵轴为在此时间窗口内触发的脉冲个数，将噪声和信号的触发的时间和次数叠加，此时可以发现信号在多次采样时是同一时间到达的，统计得到的峰值很高，而底部的噪声触发个数是随机，被平均到各个时间窗口内，此时信号峰值所在的时间窗口即是目标物体的到达时间。这种方法可以扩大SPAD的动态范围，在不做任何叠加的时候，SPAD只有0和1两种状态，而在N次平均之后动态范围可以扩大到2 N倍，但相应的单次测量需要N次发射脉冲才能完成。
图3示出现有的扩大SPAD动态范围的方法的另一个示例的示意图。如图3所示，该方法总体上是将多个SPAD并联使用的方法：将多个SAPD组成一个像素，SPAD串联电阻后输出相互并联，这类传感器通常被称为硅光电倍增管(Silicon Photomultiplier，简称为SIPM)或多像素光子计数器(Multi-Pixel Photon Counter，简称为MPPC)。
图4示出图3所示方法得到的传感器的感光面的示意图。如图4所示，每个像素包含了多个SPAD，每个像素中包括的多个SPAD之间彼此是完全相同的，也就是说，每个像素中包括的多个SPAD各自的灵敏度是相同的。图5示出图3所示方法得到的传感器的输出波形的示意图。如图5所示，对于这类传感器，在输入1～4个光子(即光子1到光子4)时，其输出的信号在幅值上有所不同。这类器件应用的根本方法与上面类似，噪声是无时间规律的，背景光不强时在同一时间内不会使一个像素里的所有SPAD触发，而信号光是在同一时间到来，因此信号的幅值会高于噪声的幅度。实际上使用了物理上的像素点代替了软件上的叠加，从而使单次测量发出的脉冲数量降低，甚至只需要一次脉冲即可测到目标物体的信号。这种方法在有N个SPAD并联时，能使动态范围扩大2 N倍。
然而，上述结合图1到图5描述的两种方法都会遇到一个实质上的问题，即在背景光比较强的时候，在一次触发后SPAD尚未恢复时下一个光子即会到来，这会导致SPAD处在持续饱和状态。此时上述两种方法将无 法使用，因为在饱和状态下，信号和噪声都会到达最大触发次数。所以上述两种方法并没有本质上改变SPAD饱和的问题，只是通过多次或多个方式扩大了动态范围，在一定程度缓解了强背景光的饱和问题。
基于此，本申请提供一种光电探测器件、探测方法和电子设备，其可以实现在强背景光下基于SPAD对信号光进行探测的方案。下面结合图6到图11进行描述。
图6示出了根据本申请实施例的光电探测器件600的示意性框图。如图6所示，光电探测器件600包括像素阵列，该像素阵列包括多个像素610(1)、610(2)、……、610(i)、……、610(j)、……、610(n)，其中，i、j和n为大于1的自然数。每个像素包括多个单光子雪崩二极管SPAD(1)到SPAD(m)，其中m为大于1的自然数。每个像素所包括的多个单光子雪崩二极管SPAD(1)到SPAD(m)中至少两个单光子雪崩二极管的灵敏度不同。
在本申请的实施例中，由于光电探测器件600所包括的像素阵列中每个像素包括的单光子雪崩二极管中至少两个单光子雪崩二极管的灵敏度不同，因而使得光电探测器件600具有至少两种不同灵敏度的单光子雪崩二极管，其中相对较高灵敏度的单光子雪崩二极管可以探测较弱的信号，实现高灵敏度的探测，而相对较低灵敏度的单光子雪崩二极管由于其较低的灵敏度，使得其可以始终处于非饱和状态实现在强背景光下对信号的探测，因而整体上扩大了单光子雪崩二极管对信号光的探测范围，即扩大了单光子雪崩二极管的动态范围。
在本申请的实施例中，可以通过各种不同的实现方式来使得像素阵列中每个像素包括的单光子雪崩二极管中至少两个单光子雪崩二极管的灵敏度不同。
在一个实现方式中，像素阵列中每个像素包括的单光子雪崩二极管中至少两个单光子雪崩二极管的感光面积不同，从而使得像素阵列中每个像素包括的单光子雪崩二极管中至少两个单光子雪崩二极管的灵敏度不同。在一个示例中，像素阵列中每个像素包括的单光子雪崩二极管中至少两个单光子雪崩二极管的尺寸不同，从而使得像素阵列中每个像素包括的单光子雪崩二极管中至少两个单光子雪崩二极管的感光面积不同。在另一个示例中，像素阵列中每个像素包括的单光子雪崩二极管中至少一个单光子雪 崩二极管的感光面被金属层遮挡，从而使得像素阵列中每个像素包括的单光子雪崩二极管中至少两个单光子雪崩二极管的感光面积不同。下面结合图7到图8来描述。
图7示出根据本申请实施例的光电探测器件700的感光面的一个示例的示意图。如图7所示，根据本申请实施例的光电探测器件700包括像素阵列，该像素阵列中的每个像素中包括多个SPAD，该多个SPAD中至少两个SPAD的尺寸不同。例如如图7所示的，每个像素包括的多个SPAD中，SPAD(1)与SPAD(3)的尺寸不同，从而使得SPAD(1)与SPAD(3)的感光面积不同；SPAD(2)与SPAD(4)的尺寸不同，从而使得SPAD(2)与SPAD4)的感光面积不同，诸如此类等等。也就是说，每个像素均有不同尺寸的SPAD组成，即每个像素均有不同感光面积的SPAD组成，使得每个像素都具有不同灵敏度的感光结构，大尺寸的SPAD可以用于实现高灵敏度的探测，而小尺寸的可以用于负责高动态范围的探测。
在本申请进一步的实施例中，像素阵列中每个像素包括的多个单光子雪崩二极管至少具有两种尺寸，其中该两种尺寸中的第一尺寸大于预设尺寸，该两种尺寸中的第二尺寸小于所述预设尺寸。继续参考图7的示例，例如SPAD(1)与SPAD(2)的尺寸是第一尺寸，SPAD(3)与SPAD(4)的尺寸是第二尺寸，预定尺寸例如为图4中所示的每个像素中的SPAD的尺寸。在该实施例中，由于以预定尺寸为界限，每个像素中包括的多个SPAD中部分SPAD的尺寸小于或等于该预定尺寸，部分SPAD的尺寸大于或等于该预定尺寸，既可以实现每个像素包括不同灵敏度的SPAD，在实现高灵敏度的探测的同时实现高动态范围的探测，又可以使得整个像素的整体感光面积基本不变或者变化较小，从而确保整个像素阵列的感光能力不受影响。
图8示出根据本申请实施例的光电探测器件800的感光面的另一个示例的示意图。如图8所示，根据本申请实施例的光电探测器件800包括像素阵列，该像素阵列中的每个像素中包括多个SPAD，该多个SPAD中至少一个单光子雪崩二极管(例如如图8所示的SPAD(1)到SPAD(8))的感光面被金属层遮挡(其中每个SPAD中黑色部分以外的区域是被遮挡的部分，黑色部分是可以感光的部分，此外每个SPAD中白色方框部分是作图生成的视觉效果，实则每个SPAD中的白色方框部分与灰色部分是一体的， 均属于被遮挡的区域)，另外的单光子雪崩二极管(例如如图8所示的像素的中间的四个全黑色的SPAD)未被金属层遮挡，很明显，被金属层遮挡的SPAD的感光面积小于未被金属层遮挡的SPAD的感光面积，从而使得每个像素均包括具有不同感光面积的SPAD，进而使得每个像素都具有不同灵敏度的感光结构，在实现高灵敏度的探测的同时实现高动态范围的探测。
在本申请的进一步的实施例中，像素阵列中的每个像素所包括的多个单光子雪崩二极管中至少两个单光子雪崩二极管的感光面被金属层遮挡，且遮挡至少两个单光子雪崩二极管的感光面的金属层的面积不同。继续参考图8的示例，例如遮挡SPAD(1)、SPAD(2)、SPAD(7)和SPAD(8)的金属层具有第一面积，而遮挡SPAD(3)、SPAD(4)、SPAD(5)和SPAD(6)的金属层具有第二面积，第一面积不等于第二面积，假定被遮挡前这些SPAD的感光面积(例如尺寸)均是相同的，那么此时已经可以实现像素阵列中的每个像素所包括的多个单光子雪崩二极管中至少两个单光子雪崩二极管的感光面积不同，即实现每个像素都具有不同灵敏度的感光结构。
在参考图8描述的实施例中，像素阵列中的每个像素所包括的多个单光子雪崩二极管中至少一个单光子雪崩二极管的感光面可以因为被金属层遮挡而使得与其他未被金属层遮挡的单光子雪崩二极管的感光面积不同，或者与其他具有不同面积的金属层遮挡的单光子雪崩二极管的感光面积不同，在该实施例中，每个像素所包括的多个单光子雪崩二极管的尺寸可以是相同的，但其感光面积可以是不同的，而尺寸的相同可以获得比较高的一致性，使得工艺稳定性更好。
在另一种实现方式中，像素阵列中的每个像素所包括的多个单光子雪崩二极管中至少一个单光子雪崩二极管的感光面被滤光片遮挡，从而使得像素阵列中每个像素包括的单光子雪崩二极管中至少两个单光子雪崩二极管的灵敏度不同。下面结合图9来描述。
图9示出根据本申请实施例的光电探测器件900的感光面的再一个示例的示意图。如图9所示，根据本申请实施例的光电探测器件900包括像素阵列，该像素阵列中的每个像素中包括多个SPAD，该多个SPAD中至少一个单光子雪崩二极管(例如如图9所示的SPAD(1)到SPAD(8))的感 的感光面被滤光片遮挡(这些SPAD的感光面显示为非黑色，即灰色)，另外的单光子雪崩二极管(例如如图9所示的像素的中间的四个全黑色的SPAD)的感光面未被滤光片遮挡(这些SPAD的感光面显示为黑色)。很明显，经滤光片遮挡的SPAD由于滤除了部分光子，使得进入SPAD的光子数目与进入未经滤光片遮挡的SPAD的光子数目不同，即使得每个像素中的多个SPAD具有不同的感光能力，进而使得每个像素都具有不同灵敏度的感光结构，在实现高灵敏度的探测的同时实现高动态范围的探测。
在本申请的进一步的实施例中，像素阵列中的每个像素所包括的多个单光子雪崩二极管中至少两个单光子雪崩二极管的感光面被滤光片遮挡，且遮挡至少两个单光子雪崩二极管的感光面的滤光片的滤光效率不同。继续参考图9的示例，例如遮挡SPAD(1)、SPAD(2)、SPAD(7)和SPAD(8)的是第一滤光片，而遮挡SPAD(3)、SPAD(4)、SPAD(5)和SPAD(6)的是第二滤光片，第一滤光片和第二滤光片各自具有不同的滤光效率，从图9也可以看出，遮挡后SPAD(1)、SPAD(2)、SPAD(7)和SPAD(8)以浅灰色来表示，SPAD(3)、SPAD(4)、SPAD(5)和SPAD(6)以深灰色来表示，这两种不同的颜色可以代表着这些SPAD被具有不同滤光效率的滤光片所遮挡，由此已经可以实现像素阵列中的每个像素所包括的多个单光子雪崩二极管中至少两个单光子雪崩二极管的感光能力不同，即实现每个像素都具有不同灵敏度的感光结构。
在再一种实现方式中，像素阵列中的每个像素所包括的多个单光子雪崩二极管中至少两个单光子雪崩二极管的工艺参数不同，从而使得像素阵列中每个像素包括的单光子雪崩二极管中至少两个单光子雪崩二极管的灵敏度不同。例如，像素阵列中的每个像素所包括的多个单光子雪崩二极管中至少两个单光子雪崩二极管是在不同批次或在不同工艺条件(如掺杂、浓度等)下制作的。在该实现方式中，亦可以实现每个像素都具有不同灵敏度的感光结构，从而在实现高灵敏度的探测的同时实现高动态范围的探测。
基于上面的描述，根据本申请实施例的光电探测器件包括具有不同灵敏度的单光子雪崩二极管的像素阵列，扩大了单光子雪崩二极管的动态范围，既能实现高灵敏度的特性对弱信号进行探测，又能保证单光子雪崩二 极管始终处于非饱和状态实现在强背景光下对信号的探测，能够解决单光子雪崩二极管的室外使用问题。在本申请的一个实施例中，该光电探测器件可以实现为硅光电倍增管或多像素光子计数器。
下面结合图10描述根据本申请另一方面提供的探测方法。图10示出了根据本申请实施例的探测方法1000的示意性流程图。如图10所示，根据本申请实施例的探测方法1000可以包括如下步骤：
在步骤S1010，发射光脉冲序列，以探测目标场景。
在步骤S1020，由光电探测器件接收经物体反射回的光脉冲序列，将所述光脉冲序列转成电信号，该光电探测器件包括像素阵列，所述像素阵列中的每个像素包括多个单光子雪崩二极管，所述多个单光子雪崩二极管中至少两个单光子雪崩二极管的灵敏度不同。
在步骤S1030，根据所述电信号确定所述物体相对所述电子设备的距离和/或方位。
在本申请的实施例中，可以采用前文结合图6到图9描述的根据本申请实施例的光电探测器件执行步骤S1020，由于前文所述的根据本申请实施例的光电探测器件包括具有不同灵敏度的单光子雪崩二极管的像素阵列，扩大了单光子雪崩二极管的动态范围，既能实现高灵敏度的特性对弱信号进行探测，又能保证单光子雪崩二极管始终处于非饱和状态实现在强背景光下对信号的探测，解决了单光子雪崩二极管的室外使用问题，因而基于其的根据本申请实施例的探测方法1000亦可以实现高灵敏度的探测的同时实现高动态范围的探测。本领域技术人员可以结合前文所述理解根据本申请实施例的探测方法1000中采用的光电探测器件的结构及其操作，为了简洁，此处仅描述该光电探测器件的主要结构，不再描述上文已述的诸多细节。
在本申请的实施例中，该光电探测器件的像素阵列中每个像素所包括的多个单光子雪崩二极管中至少两个单光子雪崩二极管的感光面积不同。
在本申请的实施例中，该光电探测器件的像素阵列中每个像素所包括的多个单光子雪崩二极管中至少两个单光子雪崩二极管的尺寸不同。
在本申请的实施例中，该光电探测器件的像素阵列中每个像素所包括的多个单光子雪崩二极管至少具有两种尺寸，其中所述两种尺寸中的第一 尺寸大于预设尺寸，所述两种尺寸中的第二尺寸小于所述预设尺寸。
在本申请的实施例中，该光电探测器件的像素阵列中每个像素所包括的多个单光子雪崩二极管中至少一个单光子雪崩二极管的感光面被金属层遮挡。
在本申请的实施例中，该光电探测器件的像素阵列中每个像素所包括的多个单光子雪崩二极管中至少两个单光子雪崩二极管的感光面被金属层遮挡，且遮挡所述至少两个单光子雪崩二极管的感光面的金属层的面积不同。
在本申请的实施例中，该光电探测器件的像素阵列中每个像素所包括的多个单光子雪崩二极管中每个单光子雪崩二极管的尺寸相同。
在本申请的实施例中，该光电探测器件的像素阵列中每个像素所包括的多个单光子雪崩二极管中至少一个单光子雪崩二极管的感光面被滤光片遮挡。
在本申请的实施例中，该光电探测器件的像素阵列中每个像素所包括的多个单光子雪崩二极管中至少两个单光子雪崩二极管的感光面被滤光片遮挡，且遮挡所述至少两个单光子雪崩二极管的感光面的滤光片的滤光效率不同。
在本申请的实施例中，该光电探测器件的像素阵列中每个像素所包括的多个单光子雪崩二极管中至少两个单光子雪崩二极管的工艺参数不同。
在本申请的实施例中，该光电探测器件的像素阵列中每个像素所包括的多个单光子雪崩二极管中至少两个单光子雪崩二极管是在不同批次或在不同工艺条件下制作的。
在本申请的实施例中，该光电探测器件是硅光电倍增管或多像素光子计数器。
根据本申请的再一方面，还提供了一种电子设备，该电子设备可以包括前文所述的根据本申请实施例的光电探测器件。在一个示例中，该电子设备可以是激光雷达或激光测距仪。下面结合图11描述根据本申请再一方面提供的电子设备。图11示出了根据本申请实施例的电子设备1100的一个示例的示意性框图。如图11所示，根据本申请实施例的电子设备1100可以包括发射模块1110、光电探测器件1120和计算模块1130。其中，发 射模块1110可以用于发射光脉冲序列，以探测目标场景；光电探测器件1120可以用于接收经物体反射回的光脉冲序列，将所述光脉冲序列转成电信号；计算模块1130可以用于根据所述电信号确定所述物体相对所述电子设备的距离和/或方位。其中，光电探测器件1120可以为前文结合图6到图9描述所述的根据本申请实施例的光电探测器件。
在本申请的实施例中，由于电子设备1100采用的光电探测器件包括具有不同灵敏度的单光子雪崩二极管的像素阵列，扩大了单光子雪崩二极管的动态范围，既能实现高灵敏度的特性对弱信号进行探测，又能保证单光子雪崩二极管始终处于非饱和状态实现在强背景光下对信号的探测，解决了单光子雪崩二极管的室外使用问题，因而包括其的电子设备1100亦可以实现高灵敏度的探测的同时实现高动态范围的探测。本领域技术人员可以结合前文所述理解根据本申请实施例的电子设备1100中采用的光电探测器件的结构及其操作，为了简洁，此处不再赘述。
基于上面的描述，根据本申请实施例的光电探测器件、探测方法和电子设备包括具有不同灵敏度的单光子雪崩二极管的像素阵列，扩大了单光子雪崩二极管的动态范围，既能实现高灵敏度的特性对弱信号进行探测，又能保证单光子雪崩二极管始终处于非饱和状态实现在强背景光下对信号的探测，解决了单光子雪崩二极管的室外使用问题。
尽管这里已经参考附图描述了示例实施例，应理解上述示例实施例仅仅是示例性的，并且不意图将本申请的范围限制于此。本领域普通技术人员可以在其中进行各种改变和修改，而不偏离本申请的范围和精神。所有这些改变和修改意在被包括在所附权利要求所要求的本申请的范围之内。
本领域普通技术人员可以意识到，结合本文中所公开的实施例描述的各示例的单元及算法步骤，能够以电子硬件、或者计算机软件和电子硬件的结合来实现。这些功能究竟以硬件还是软件方式来执行，取决于技术方案的特定应用和设计约束条件。专业技术人员可以对特定的应用来使用不同方法来实现所描述的功能，但是这种实现不应认为超出本申请的范围。
在本申请所提供的几个实施例中，应该理解到，所揭露的设备和方法，可以通过其它的方式实现。例如，以上所描述的设备实施例仅仅是示意性的，例如，所述单元的划分，仅仅为一种逻辑功能划分，实际实现时可以 有另外的划分方式，例如多个单元或组件可以结合或者可以集成到另一个设备，或一些特征可以忽略，或不执行。
在此处所提供的说明书中，说明了大量具体细节。然而，能够理解，本申请的实施例可以在没有这些具体细节的情况下实践。在一些实例中，并未详细示出公知的方法、结构和技术，以便不模糊对本说明书的理解。
类似地，应当理解，为了精简本申请并帮助理解各个发明方面中的一个或多个，在对本申请的示例性实施例的描述中，本申请的各个特征有时被一起分组到单个实施例、图、或者对其的描述中。然而，并不应将该本申请的方法解释成反映如下意图：即所要求保护的本申请要求比在权利要求中所明确记载的特征更多的特征。更确切地说，如相应的权利要求书所反映的那样，其发明点在于可以用少于某个公开的单个实施例的所有特征的特征来解决相应的技术问题。因此，遵循具体实施方式的权利要求书由此明确地并入该具体实施方式，其中权利要求本身都作为本申请的单独实施例。
本领域的技术人员可以理解，除了特征之间相互排斥之外，可以采用任何组合对本说明书(包括伴随的权利要求、摘要和附图)中公开的所有特征以及如此公开的任何方法或者设备的所有过程或单元进行组合。除非另外明确陈述，本说明书(包括伴随的权利要求、摘要和附图)中公开的特征可以由提供相同、等同或相似目的的替代特征来代替。
此外，本领域的技术人员能够理解，尽管在此所述的一些实施例包括其它实施例中所包括的某些特征而不是其它特征，但是不同实施例的特征的组合意味着处于本申请的范围之内并且形成不同的实施例。例如，在权利要求书中，所要求保护的实施例的任意之一都可以以任意的组合方式来使用。
本申请的各个部件实施例可以以硬件实现，或者以在一个或者多个处理器上运行的软件模块实现，或者以它们的组合实现。本领域的技术人员应当理解，可以在实践中使用微处理器或者数字信号处理器(DSP)来实现根据本申请实施例的一些模块的一些或者全部功能。本申请还可以实现为用于执行这里所描述的方法的一部分或者全部的装置程序(例如，计算机程序和计算机程序产品)。这样的实现本申请的程序可以存储在计算机可 读存储介质上，或者可以具有一个或者多个信号的形式。这样的信号可以从因特网网站上下载得到，或者在载体信号上提供，或者以任何其他形式提供。
应该注意的是上述实施例对本申请进行说明而不是对本申请进行限制，并且本领域技术人员在不脱离所附权利要求的范围的情况下可设计出替换实施例。在权利要求中，不应将位于括号之间的任何参考符号构造成对权利要求的限制。本申请可以借助于包括有若干不同元件的硬件以及借助于适当编程的计算机来实现。在列举了若干装置的单元权利要求中，这些装置中的若干个可以是通过同一个硬件项来具体体现。单词第一、第二、以及第三等的使用不表示任何顺序。可将这些单词解释为名称。
以上所述，仅为本申请的具体实施方式或对具体实施方式的说明，本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内。本申请的保护范围应以权利要求的保护范围为准。

Claims (27)

  1. 一种光电探测器件，其特征在于，所述器件包括像素阵列，所述像素阵列中的每个像素包括多个单光子雪崩二极管，所述多个单光子雪崩二极管中至少两个单光子雪崩二极管的灵敏度不同。
  2. 根据权利要求1所述的器件，其特征在于，所述多个单光子雪崩二极管中至少两个单光子雪崩二极管的感光面积不同。
  3. 根据权利要求2所述的器件，其特征在于，所述多个单光子雪崩二极管中至少两个单光子雪崩二极管的尺寸不同。
  4. 根据权利要求3所述的器件，其特征在于，所述多个单光子雪崩二极管至少具有两种尺寸，其中所述两种尺寸中的第一尺寸大于预设尺寸，所述两种尺寸中的第二尺寸小于所述预设尺寸。
  5. 根据权利要求2所述的器件，其特征在于，所述多个单光子雪崩二极管中至少一个单光子雪崩二极管的感光面被金属层遮挡。
  6. 根据权利要求5所述的器件，其特征在于，所述多个单光子雪崩二极管中至少两个单光子雪崩二极管的感光面被金属层遮挡，且遮挡所述至少两个单光子雪崩二极管的感光面的金属层的面积不同。
  7. 根据权利要求5或6所述的器件，其特征在于，所述多个单光子雪崩二极管中每个单光子雪崩二极管的尺寸相同。
  8. 根据权利要求1所述的器件，其特征在于，所述多个单光子雪崩二极管中至少一个单光子雪崩二极管的感光面被滤光片遮挡。
  9. 根据权利要求8所述的器件，其特征在于，所述多个单光子雪崩二极管中至少两个单光子雪崩二极管的感光面被滤光片遮挡，且遮挡所述至少两个单光子雪崩二极管的感光面的滤光片的滤光效率不同。
  10. 根据权利要求1所述的器件，其特征在于，所述多个单光子雪崩二极管中至少两个单光子雪崩二极管的工艺参数不同。
  11. 根据权利要求10所述的器件，其特征在于，所述多个单光子雪崩二极管中至少两个单光子雪崩二极管是在不同批次或在不同工艺条件下制作的。
  12. 根据权利要求1-11中的任一项所述的器件，其特征在于，所述器件是硅光电倍增管。
  13. 一种探测方法，其特征在于，所述探测方法包括：
    发射光脉冲序列，以探测目标场景；
    接收经物体反射回的光脉冲序列，将所述光脉冲序列转成电信号；
    根据所述电信号确定所述物体相对所述电子设备的距离和/或方位；
    其中，所述接收经物体反射回的光脉冲序列以及将所述光脉冲序列转成电信号是由光电探测器件来执行的，所述光电探测器件包括像素阵列，所述像素阵列中的每个像素包括多个单光子雪崩二极管，所述多个单光子雪崩二极管中至少两个单光子雪崩二极管的灵敏度不同。
  14. 根据权利要求13所述的方法，其特征在于，所述多个单光子雪崩二极管中至少两个单光子雪崩二极管的感光面积不同。
  15. 根据权利要求14所述的方法，其特征在于，所述多个单光子雪崩二极管中至少两个单光子雪崩二极管的尺寸不同。
  16. 根据权利要求15所述的方法，其特征在于，所述多个单光子雪崩二极管至少具有两种尺寸，其中所述两种尺寸中的第一尺寸大于预设尺寸，所述两种尺寸中的第二尺寸小于所述预设尺寸。
  17. 根据权利要求14所述的方法，其特征在于，所述多个单光子雪崩二极管中至少一个单光子雪崩二极管的感光面被金属层遮挡。
  18. 根据权利要求17所述的方法，其特征在于，所述多个单光子雪崩二极管中至少两个单光子雪崩二极管的感光面被金属层遮挡，且遮挡所述至少两个单光子雪崩二极管的感光面的金属层的面积不同。
  19. 根据权利要求17或18所述的方法，其特征在于，所述多个单光子雪崩二极管中每个单光子雪崩二极管的尺寸相同。
  20. 根据权利要求13所述的方法，其特征在于，所述多个单光子雪崩二极管中至少一个单光子雪崩二极管的感光面被滤光片遮挡。
  21. 根据权利要求20所述的方法，其特征在于，所述多个单光子雪崩二极管中至少两个单光子雪崩二极管的感光面被滤光片遮挡，且遮挡所述至少两个单光子雪崩二极管的感光面的滤光片的滤光效率不同。
  22. 根据权利要求13所述的方法，其特征在于，所述多个单光子雪崩二极管中至少两个单光子雪崩二极管的工艺参数不同。
  23. 根据权利要求22所述的方法，其特征在于，所述多个单光子雪 崩二极管中至少两个单光子雪崩二极管是在不同批次或在不同工艺条件下制作的。
  24. 根据权利要求13-23中的任一项所述的方法，其特征在于，所述器件是硅光电倍增管。
  25. 一种电子设备，其特征在于，所述电子设备包括权利要求1-12中的任一项所述的光电探测器件。
  26. 根据权利要求25所述的电子设备，其特征在于，所述电子设备包括激光雷达或激光测距仪。
  27. 如权利要求25或26所述的电子设备，其特征在于，所述电子设备还包括发射模块和计算模块，其中：
    所述发射模块用于发射光脉冲序列，以探测目标场景；
    所述光电探测器件用于接收经物体反射回的光脉冲序列，将所述光脉冲序列转成电信号；
    所述计算模块用于根据所述电信号确定所述物体相对所述电子设备的距离和/或方位。
PCT/CN2020/112454 2020-08-31 2020-08-31 光电探测器件、探测方法和电子设备 WO2022041189A1 (zh)

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