WO2022034931A1 - Substrat pour fabrication de dispositif d'affichage et procédé de fabrication de dispositif d'affichage l'utilisant - Google Patents

Substrat pour fabrication de dispositif d'affichage et procédé de fabrication de dispositif d'affichage l'utilisant Download PDF

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WO2022034931A1
WO2022034931A1 PCT/KR2020/010525 KR2020010525W WO2022034931A1 WO 2022034931 A1 WO2022034931 A1 WO 2022034931A1 KR 2020010525 W KR2020010525 W KR 2020010525W WO 2022034931 A1 WO2022034931 A1 WO 2022034931A1
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Prior art keywords
substrate
light emitting
semiconductor light
assembly
emitting devices
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PCT/KR2020/010525
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English (en)
Korean (ko)
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허윤호
박창서
이진형
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엘지전자 주식회사
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Priority to KR1020227045739A priority Critical patent/KR20230021016A/ko
Priority to PCT/KR2020/010525 priority patent/WO2022034931A1/fr
Publication of WO2022034931A1 publication Critical patent/WO2022034931A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/95001—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/95053—Bonding environment
    • H01L2224/95085—Bonding environment being a liquid, e.g. for fluidic self-assembly
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/951—Supplying the plurality of semiconductor or solid-state bodies
    • H01L2224/95101—Supplying the plurality of semiconductor or solid-state bodies in a liquid medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/9512—Aligning the plurality of semiconductor or solid-state bodies
    • H01L2224/95121—Active alignment, i.e. by apparatus steering
    • H01L2224/95133—Active alignment, i.e. by apparatus steering by applying an electromagnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Definitions

  • the present invention relates to a substrate used for manufacturing a display device using a semiconductor light emitting device, particularly, a semiconductor light emitting device having a size of several to several tens of ⁇ m, and a method of manufacturing the display device using the same.
  • LCDs liquid crystal displays
  • OLEDs organic light emitting device displays
  • semiconductor light emitting device displays are competing to implement large-area displays in the display technology field.
  • micro LED semiconductor light emitting device having a cross-sectional area of 100 ⁇ m or less
  • very high efficiency can be provided because the display does not absorb light using a polarizing plate or the like.
  • millions of semiconductor light emitting devices are required to implement a large-area display, the transfer process is difficult compared to other types of displays.
  • micro LEDs can be transferred by pick-and-place, laser lift-off, or self-assembly.
  • the self-assembly method is the most advantageous method for realizing a large-area display device in a way in which the semiconductor light emitting devices find their own positions in a fluid.
  • the self-assembly method includes a method of directly assembling the semiconductor light emitting devices to the final substrate to be used in the product (direct transfer method) and a method of assembling the semiconductor light emitting devices on the assembly substrate and then transferring the semiconductor light emitting devices to the final substrate through an additional transfer process (hybrid transfer). method) is there.
  • the direct transfer method is efficient in terms of process, and the hybrid transfer method has an advantage in that structures for self-assembly can be added without limitation, so the two methods are selectively used.
  • One object of the present invention is to provide a structure of an assembly substrate used in a hybrid method and a method of manufacturing a display device using the assembly substrate.
  • Another object of the present invention is to provide an assembly substrate having a structure capable of confirming whether or not transfer is defective, and a method of manufacturing a display device using the same.
  • a substrate for manufacturing a display device includes a base portion; assembly electrodes extending in one direction and disposed on one surface of the base part at predetermined intervals; and a barrier rib portion stacked on the base while forming assembling holes in which the semiconductor light emitting device is seated to overlap the assembly electrodes, and a penetration preventing layer formed above or below the barrier rib so as not to overlap the assembly holes. ; and an anti-reflection layer formed on the other surface of the base part.
  • the penetration prevention layer is characterized in that it is formed entirely in a region that does not overlap the assembly hole.
  • the permeation barrier layer when the transmission barrier layer is formed under the barrier rib portion, the permeation barrier layer may be disposed between the assembled electrodes and the barrier rib portion.
  • the base portion, the assembled electrodes, the barrier rib portion and the anti-reflection layer are characterized in that they are formed of a light-transmitting material.
  • the anti-reflection layer is characterized in that it is formed to have a surface roughness.
  • the present invention it characterized in that it further comprises a dielectric layer formed along one surface of the partition wall portion.
  • a method of manufacturing a display device includes the steps of: (a) putting semiconductor light emitting devices in a chamber containing a fluid, and arranging a first substrate to which the semiconductor light emitting devices are to be transferred in an upper portion of the chamber; (b) transferring the semiconductor light emitting devices injected into the chamber to a preset position of the first substrate using an electric field and a magnetic field; and (c) irradiating light from one side of the first substrate to inspect whether the semiconductor light emitting devices are defective in transfer, wherein in step (c), a portion of the first substrate through which light is transmitted It is characterized in that it corresponds to the transfer defective region of the semiconductor light emitting devices.
  • the first substrate may include a base portion; assembly electrodes extending in one direction and disposed on one surface of the base part at predetermined intervals; a barrier rib portion stacked on the base portion while forming assembly holes in which the semiconductor light emitting device is mounted to overlap the assembly electrodes; a permeation prevention layer formed above or below the partition wall portion so as not to overlap the assembly holes; and an anti-reflection layer formed on the other surface of the base, wherein the base, the assembled electrodes, the barrier rib, and the anti-reflection layer are formed of a light-transmitting material, and the step (c) is performed on the other surface of the base. It is characterized in that light is irradiated to the first substrate.
  • the steps (a) and (b) are performed in a state in which the first substrate is disposed such that a preset position of the first substrate faces the direction of gravity
  • the step (c) includes the It is characterized in that the process proceeds in a state in which the first substrate is arranged so that a preset position of the first substrate faces in a direction opposite to gravity.
  • the step (c) is performed by dividing the first substrate into a plurality of regions and then for each of the divided regions, wherein the plurality of regions include: a non-defective region that does not include the transfer defective region; and a defective area including at least one transfer defective area.
  • step (d) further comprising the step of (d) transferring the semiconductor light emitting devices transferred to the first substrate to a second substrate on which wiring is formed, wherein the step (d) is selectively performed only in the non-defective region characterized in that
  • the substrate for manufacturing a display device can be divided into a transmissive region and a non-transmissive region in a state in which the semiconductor light emitting devices are seated, thereby having an effect of easily confirming whether or not transfer is defective.
  • the repair process can be simplified and a high-quality display device can be manufactured.
  • FIG. 1 is a conceptual diagram illustrating an embodiment of a display device using a semiconductor light emitting device of the present invention.
  • FIG. 2 is an enlarged view of a portion A of the display device of FIG. 1 .
  • FIG. 3 is an enlarged view of the semiconductor light emitting device of FIG. 2 .
  • FIG. 4 is a view showing another embodiment of the semiconductor light emitting device of FIG. 2 .
  • 5A to 5E are conceptual views for explaining a new process of manufacturing the above-described semiconductor light emitting device.
  • FIG. 6 is a conceptual diagram illustrating an embodiment of an apparatus for self-assembling a semiconductor light emitting device according to the present invention.
  • FIG. 7 is a block diagram of the self-assembly apparatus of FIG. 6 .
  • 8A to 8E are conceptual views illustrating a process of self-assembling semiconductor light emitting devices on a substrate using the self-assembly apparatus of FIG. 6 .
  • FIGS. 8A to 8E are diagrams illustrating an embodiment of a semiconductor light emitting device used in the self-assembly process of FIGS. 8A to 8E .
  • 10A to 10C are conceptual views for explaining another transfer process of the semiconductor light emitting device after the self-assembly process according to the present invention.
  • 11 to 13 are flowcharts illustrating a method of manufacturing a display device including semiconductor light emitting devices emitting red, green, and blue light.
  • FIG. 14 is a diagram illustrating a structure (inside an assembly hole) of a substrate for manufacturing a display device according to an exemplary embodiment of the related art.
  • 15A and 15B are diagrams illustrating a structure (inside an assembly hole) of a substrate for manufacturing a display device according to various embodiments of the present disclosure
  • FIG. 16 is a view illustrating a difference according to the presence or absence of a semiconductor light emitting device in an assembly hole in the substrate for manufacturing the display device according to FIG. 15A.
  • FIG. 17 is a view showing a problem of the conventional method of manufacturing a display device using the substrate for manufacturing the display device according to FIG. 14 .
  • FIG. 18 is a diagram illustrating a method of inspecting whether a semiconductor light emitting device has a transfer defect in a method of manufacturing a display device using the substrate for manufacturing a display device according to the present invention.
  • 19 is a conceptual diagram for explaining a method of manufacturing a display device according to the present invention.
  • the display device described in this specification includes a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation system, and a slate PC.
  • PDA personal digital assistant
  • PMP portable multimedia player
  • slate PC slate PC
  • slate PC tablet PC
  • ultrabook ultrabook
  • digital TV digital TV
  • desktop computer desktop computer
  • the configuration according to the embodiment described in this specification can be applied as long as it can include a display even in a new product form to be developed later.
  • FIG. 1 is a conceptual diagram illustrating an embodiment of a display device using a semiconductor light emitting device of the present invention
  • FIG. 2 is an enlarged view of part A of the display device of FIG. 1
  • FIG. 3 is a view showing the semiconductor light emitting device of FIG. 2 It is an enlarged view
  • FIG. 4 is a view showing another embodiment of the semiconductor light emitting device of FIG. 2 .
  • information processed by the control unit of the display apparatus 100 may be output through the display module 140 .
  • the closed-loop case 101 surrounding the edge of the display module 140 may form a bezel of the display device 100 .
  • the display module 140 includes a panel 141 on which an image is displayed, and the panel 141 includes a micro-sized semiconductor light emitting device 150 and a wiring board 110 on which the semiconductor light emitting device 150 is mounted. can be provided.
  • a wiring may be formed on the wiring board 110 to be connected to the n-type electrode 152 and the p-type electrode 156 of the semiconductor light emitting device 150 .
  • the semiconductor light emitting device 150 may be provided on the wiring board 110 as an individual pixel that emits light.
  • the image displayed on the panel 141 is visual information, and is realized by independently controlling light emission of unit pixels arranged in a matrix form through the wiring.
  • a micro LED Light Emitting Diode
  • the micro LED may be a light emitting diode formed in a small size of 100 ⁇ m or less.
  • blue, red, and green colors are respectively provided in the light emitting region, and a unit pixel may be implemented by a combination thereof. That is, the unit pixel means a minimum unit for realizing one color, and at least three micro LEDs may be provided in the unit pixel.
  • the semiconductor light emitting device 150 may have a vertical structure.
  • the semiconductor light emitting device 150 is mainly made of gallium nitride (GaN), and indium (In) and/or aluminum (Al) are added together to be implemented as a high output light emitting device that emits various lights including blue.
  • GaN gallium nitride
  • Al aluminum
  • the vertical semiconductor light emitting device includes a p-type electrode 156 , a p-type semiconductor layer 155 formed on the p-type electrode 156 , an active layer 154 formed on the p-type semiconductor layer 155 , and an active layer 154 . It includes an n-type semiconductor layer 153 formed thereon, and an n-type electrode 152 formed on the n-type semiconductor layer 153 .
  • the lower p-type electrode 156 may be electrically connected to the p-electrode 111 of the wiring board, and the upper n-type electrode 152 is connected to the n-electrode 112 and the upper side of the semiconductor light emitting device. may be electrically connected.
  • the vertical semiconductor light emitting device 150 has a great advantage in that it is possible to reduce the chip size because electrodes can be arranged up and down.
  • the semiconductor light emitting device may be a flip chip type light emitting device.
  • the semiconductor light emitting device 250 includes a p-type electrode 256 , a p-type semiconductor layer 255 on which the p-type electrode 256 is formed, and an active layer 254 formed on the p-type semiconductor layer 255 . , an n-type semiconductor layer 253 formed on the active layer 254 , and an n-type electrode 252 spaced apart from the p-type electrode 256 in the horizontal direction on the n-type semiconductor layer 253 .
  • both the p-type electrode 256 and the n-type electrode 252 may be electrically connected to the p-electrode and the n-electrode of the wiring board under the semiconductor light emitting device.
  • the vertical semiconductor light emitting device and the flip chip type semiconductor light emitting device may be a green semiconductor light emitting device, a blue semiconductor light emitting device, or a red semiconductor light emitting device, respectively.
  • gallium nitride (GaN) is mainly used, and indium (In) and/or aluminum (Al) are added together to implement a high output light emitting device that emits green or blue light.
  • the semiconductor light emitting device may be a gallium nitride thin film formed in various layers such as n-Gan, p-Gan, AlGaN, InGan, etc.
  • the p-type semiconductor layer is P-type GaN, and the n The type semiconductor layer may be N-type GaN.
  • the p-type semiconductor layer may be P-type GaAs, and the n-type semiconductor layer may be N-type GaAs.
  • the p-type semiconductor layer may be P-type GaN doped with Mg on the p-electrode side
  • the n-type semiconductor layer may be N-type GaN doped with Si on the n-electrode side.
  • the above-described semiconductor light emitting devices may be semiconductor light emitting devices without an active layer.
  • the self-luminous unit pixels can be arranged in a high definition in the display panel, thereby realizing a high-definition display device.
  • the semiconductor light emitting device grown on a wafer and formed through mesa and isolation is used as an individual pixel.
  • the micro-sized semiconductor light emitting device 150 formed on the wafer must be transferred to a predetermined position on the substrate of the display panel.
  • There is a pick and place method as such transfer technology but the success rate is low and it requires a lot of time.
  • there is a technique of transferring several devices at a time using a stamp or a roll but it is not suitable for a large screen display due to a limitation in yield.
  • the present invention proposes a new manufacturing method and manufacturing apparatus of a display device that can solve these problems.
  • 5A to 5E are conceptual views for explaining a new process of manufacturing the above-described semiconductor light emitting device.
  • a display device using a passive matrix (PM) type semiconductor light emitting device is exemplified.
  • PM passive matrix
  • AM active matrix
  • the self-assembly method described in this specification may be applied to both a horizontal type semiconductor light emitting device and a vertical type semiconductor light emitting device.
  • a first conductivity type semiconductor layer 153 , an active layer 154 , and a second conductivity type semiconductor layer 155 are grown on a growth substrate 159 , respectively ( FIG. 5A ).
  • first conductivity type semiconductor layer 153 After the first conductivity type semiconductor layer 153 is grown, an active layer 154 is grown on the first conductivity type semiconductor layer 153 , and then a second conductivity type semiconductor is grown on the active layer 154 . Layer 155 is grown. In this way, when the first conductivity type semiconductor layer 153, the active layer 154, and the second conductivity type semiconductor layer 155 are sequentially grown, as shown in FIG. 5A, the first conductivity type semiconductor layer 153 , the active layer 154 and the second conductive semiconductor layer 155 form a stacked structure.
  • the first conductivity type semiconductor layer 153 may be an n-type semiconductor layer
  • the second conductivity type semiconductor layer 155 may be a p-type semiconductor layer.
  • the present invention is not necessarily limited thereto, and examples in which the first conductivity type is p-type and the second conductivity type is n-type are also possible.
  • the p-type semiconductor layer may be P-type GaN doped with Mg
  • the n-type semiconductor layer may be N-type GaN doped with Si on the n-electrode side.
  • the growth substrate 159 may be formed of a material having a light-transmitting property, for example, any one of sapphire (Al2O3), GaN, ZnO, and AlO, but is not limited thereto.
  • the growth substrate 1059 may be formed of a material suitable for semiconductor material growth, a carrier wafer. It may be formed of a material having excellent thermal conductivity, and, including a conductive substrate or an insulating substrate, for example, a SiC substrate having higher thermal conductivity than a sapphire (Al2O3) substrate or at least one of Si, GaAs, GaP, InP, Ga2O3 can be used
  • the first conductivity type semiconductor layer 153 , the active layer 154 , and the second conductivity type semiconductor layer 155 are removed to form a plurality of semiconductor light emitting devices ( FIG. 5B ).
  • isolation is performed so that the plurality of light emitting devices form a light emitting device array. That is, the first conductivity type semiconductor layer 153 , the active layer 154 , and the second conductivity type semiconductor layer 155 are vertically etched to form a plurality of semiconductor light emitting devices.
  • the active layer 154 and the second conductivity type semiconductor layer 155 are partially removed in the vertical direction so that the first conductivity type semiconductor layer 153 is exposed to the outside.
  • An exposed mesa process, followed by an isolation of the first conductive semiconductor layer to form a plurality of semiconductor light emitting device arrays by etching may be performed.
  • second conductivity type electrodes 156 are respectively formed on one surface of the second conductivity type semiconductor layer 155 ( FIG. 5C ).
  • the second conductive electrode 156 may be formed by a deposition method such as sputtering, but the present invention is not limited thereto. However, when the first conductive semiconductor layer and the second conductive semiconductor layer are an n-type semiconductor layer and a p-type semiconductor layer, respectively, the second conductive electrode 156 may be an n-type electrode.
  • the growth substrate 159 is removed to provide a plurality of semiconductor light emitting devices.
  • the growth substrate 1059 may be removed using a laser lift-off (LLO) method or a chemical lift-off (CLO) method ( FIG. 5D ).
  • FIG. 5E a step of mounting the semiconductor light emitting devices 150 on a substrate in a chamber filled with a fluid is performed.
  • the semiconductor light emitting devices 150 and the substrate are put in a chamber filled with a fluid, and the semiconductor light emitting devices are self-assembled on the substrate 1061 using flow, gravity, surface tension, and the like.
  • the substrate may be the assembly substrate 161 .
  • the substrate may be a wiring substrate.
  • the substrate is provided as the assembly substrate 161 to exemplify that the semiconductor light emitting devices 1050 are seated.
  • Cells in which the semiconductor light emitting devices 150 are inserted may be provided on the assembly substrate 161 to facilitate mounting of the semiconductor light emitting devices 150 on the assembly substrate 161 .
  • cells in which the semiconductor light emitting devices 150 are seated are formed on the assembly substrate 161 at positions where the semiconductor light emitting devices 150 are aligned with the wiring electrodes.
  • the semiconductor light emitting devices 150 are assembled to the cells while moving in the fluid.
  • the assembly substrate 161 may be referred to as a temporary substrate.
  • the present invention proposes a method and apparatus for minimizing the influence of gravity or frictional force and preventing non-specific binding in order to increase the transfer yield.
  • a magnetic material is disposed on the semiconductor light emitting device to move the semiconductor light emitting device using magnetic force, and the semiconductor light emitting device is seated at a preset position using an electric field during the movement process.
  • FIG. 6 is a conceptual diagram illustrating an example of a self-assembly apparatus for a semiconductor light emitting device according to the present invention
  • FIG. 7 is a block diagram of the self-assembly apparatus of FIG. 6
  • 8A to 8D are conceptual views illustrating a process of self-assembling a semiconductor light emitting device using the self-assembly apparatus of FIG. 6
  • FIG. 9 is a conceptual diagram for explaining the semiconductor light emitting device of FIGS. 8A to 8D .
  • the self-assembly apparatus 160 of the present invention may include a fluid chamber 162 , a magnet 163 and a position control unit 164 .
  • the fluid chamber 162 has a space for accommodating a plurality of semiconductor light emitting devices.
  • the space may be filled with a fluid, and the fluid may include water as an assembly solution.
  • the fluid chamber 162 may be a water tank and may be configured as an open type.
  • the present invention is not limited thereto, and the fluid chamber 162 may be of a closed type in which the space is a closed space.
  • the substrate 161 may be disposed in the fluid chamber 162 so that an assembly surface on which the semiconductor light emitting devices 150 are assembled faces downward.
  • the substrate 161 may be transferred to an assembly position by a transfer unit, and the transfer unit may include a stage 165 on which the substrate is mounted. The position of the stage 165 is adjusted by the controller, and through this, the substrate 161 can be transferred to the assembly position.
  • the assembly surface of the substrate 161 faces the bottom of the fluid chamber 150 .
  • the assembly surface of the substrate 161 is disposed to be immersed in the fluid in the fluid chamber 162 . Accordingly, the semiconductor light emitting device 150 moves to the assembly surface in the fluid.
  • the substrate 161 is an assembled substrate capable of forming an electric field, and may include a base portion 161a, a dielectric layer 161b, and a plurality of electrodes 161c.
  • the base portion 161a may be made of an insulating material, and the plurality of electrodes 161c may be a thin film or a thick film bi-planar electrode patterned on one surface of the base portion 161a.
  • the electrode 161c may be formed of, for example, a stack of Ti/Cu/Ti, Ag paste, ITO, or the like.
  • the dielectric layer 161b is made of an inorganic material such as SiO2, SiNx, SiON, Al2O3, TiO2, HfO2, or the like. Alternatively, the dielectric layer 161b may be configured as a single layer or multi-layer as an organic insulator. The dielectric layer 161b may have a thickness of several tens of nm to several ⁇ m.
  • the substrate 161 according to the present invention includes a plurality of cells 161d partitioned by barrier ribs.
  • the cells 161d are sequentially arranged in one direction and may be made of a polymer material.
  • the partition walls 161e forming the cells 161d are shared with the neighboring cells 161d.
  • the partition wall 161e protrudes from the base portion 161a, and the cells 161d may be sequentially disposed along one direction by the partition wall 161e. More specifically, the cells 161d are sequentially arranged in the column and row directions, respectively, and may have a matrix structure.
  • a groove for accommodating the semiconductor light emitting device 150 is provided, and the groove may be a space defined by the partition wall 161e.
  • the shape of the groove may be the same as or similar to that of the semiconductor light emitting device.
  • the groove may have a rectangular shape.
  • the grooves formed in the cells may have a circular shape.
  • each of the cells is configured to accommodate a single semiconductor light emitting device. That is, one semiconductor light emitting device is accommodated in one cell.
  • the plurality of electrodes 161c may include a plurality of electrode lines disposed at the bottom of each of the cells 161d, and the plurality of electrode lines may extend to adjacent cells.
  • the plurality of electrodes 161c are disposed below the cells 161d, and different polarities are applied to each other to generate an electric field in the cells 161d.
  • the dielectric layer may form the bottom of the cells 161d while covering the plurality of electrodes 161c with the dielectric layer.
  • the electrodes of the substrate 161 are electrically connected to the power supply unit 171 .
  • the power supply unit 171 applies power to the plurality of electrodes to generate the electric field.
  • the self-assembly apparatus may include a magnet 163 for applying a magnetic force to the semiconductor light emitting devices.
  • the magnet 163 is spaced apart from the fluid chamber 162 to apply a magnetic force to the semiconductor light emitting devices 150 .
  • the magnet 163 may be disposed to face the opposite surface of the assembly surface of the substrate 161 , and the position of the magnet is controlled by the position controller 164 connected to the magnet 163 .
  • the semiconductor light emitting device 1050 may include a magnetic material to move in the fluid by the magnetic field of the magnet 163 .
  • a semiconductor light emitting device including a magnetic material, a first conductivity type electrode 1052 , a second conductivity type electrode 1056 , and a first conductivity type semiconductor layer in which the first conductivity type electrode 1052 are disposed (1053), a second conductivity type semiconductor layer 1055 overlapping the first conductivity type semiconductor layer 1052 and on which the second conductivity type electrode 1056 is disposed, and the first and second conductivity type semiconductors an active layer 1054 disposed between the layers 1053 and 1055 .
  • the first conductivity type may be p-type
  • the second conductivity type may be n-type
  • the semiconductor light emitting device without the active layer may be used.
  • the first conductive electrode 1052 may be generated after the semiconductor light emitting device is assembled on the wiring board by self-assembly of the semiconductor light emitting device.
  • the second conductive electrode 1056 may include the magnetic material.
  • the magnetic material may mean a magnetic metal.
  • the magnetic material may be Ni, SmCo, or the like, and as another example, may include a material corresponding to at least one of Gd-based, La-based, and Mn-based materials.
  • the magnetic material may be provided on the second conductive electrode 1056 in the form of particles.
  • a conductive electrode including a magnetic material one layer of the conductive electrode may be formed of a magnetic material.
  • the second conductive electrode 1056 of the semiconductor light emitting device 1050 may include a first layer 1056a and a second layer 1056b.
  • the first layer 1056a may include a magnetic material
  • the second layer 1056b may include a metal material rather than a magnetic material.
  • the first layer 1056a including a magnetic material may be disposed to contact the second conductivity-type semiconductor layer 1055 .
  • the first layer 1056a is disposed between the second layer 1056b and the second conductivity type semiconductor layer 1055 .
  • the second layer 1056b may be a contact metal connected to the second electrode of the wiring board.
  • the present invention is not necessarily limited thereto, and the magnetic material may be disposed on one surface of the first conductivity type semiconductor layer.
  • the self-assembly device includes a magnet handler that can be moved automatically or manually in the x, y, and z axes on the upper part of the fluid chamber, or the magnet 163 . It may be provided with a motor capable of rotating the. The magnet handler and the motor may constitute the position control unit 164 . Through this, the magnet 163 rotates in a horizontal direction, clockwise or counterclockwise direction with the substrate 161 .
  • a light-transmitting bottom plate 166 may be formed in the fluid chamber 162 , and the semiconductor light emitting devices may be disposed between the bottom plate 166 and the substrate 161 .
  • An image sensor 167 may be disposed to face the bottom plate 166 to monitor the inside of the fluid chamber 162 through the bottom plate 166 .
  • the image sensor 167 is controlled by the controller 172 and may include an inverted type lens and a CCD to observe the assembly surface of the substrate 161 .
  • the self-assembly apparatus described above is made to use a combination of a magnetic field and an electric field, and using this, the semiconductor light emitting devices are seated at a predetermined position on the substrate by an electric field in the process of moving by a change in the position of the magnet.
  • the assembly process using the self-assembly apparatus described above will be described in more detail.
  • a plurality of semiconductor light emitting devices 1050 including a magnetic material are formed through the process described with reference to FIGS. 5A to 5C .
  • a magnetic material may be deposited on the semiconductor light emitting device.
  • the substrate 161 is transferred to an assembly position, and the semiconductor light emitting devices 1050 are put into the fluid chamber 162 ( FIG. 8A ).
  • the assembly position of the substrate 161 will be a position in which the fluid chamber 162 is disposed such that the assembly surface of the substrate 161 on which the semiconductor light emitting devices 1050 are assembled faces downward.
  • some of the semiconductor light emitting devices 1050 may sink to the bottom of the fluid chamber 162 and some may float in the fluid.
  • some of the semiconductor light emitting devices 1050 may sink to the bottom plate 166 .
  • a magnetic force is applied to the semiconductor light emitting devices 1050 so that the semiconductor light emitting devices 1050 vertically float in the fluid chamber 162 ( FIG. 8B ).
  • the semiconductor light emitting devices 1050 float toward the substrate 161 in the fluid.
  • the original position may be a position deviated from the fluid chamber 162 .
  • the magnet 163 may be configured as an electromagnet. In this case, electricity is supplied to the electromagnet to generate an initial magnetic force.
  • the separation distance between the assembly surface of the substrate 161 and the semiconductor light emitting devices 1050 may be controlled.
  • the separation distance is controlled using the weight, buoyancy, and magnetic force of the semiconductor light emitting devices 1050 .
  • the separation distance may be several millimeters to several tens of micrometers from the outermost surface of the substrate.
  • a magnetic force is applied to the semiconductor light emitting devices 1050 so that the semiconductor light emitting devices 1050 move in one direction in the fluid chamber 162 .
  • the magnet 163 moves in a direction horizontal to the substrate, clockwise or counterclockwise ( FIG. 8C ).
  • the semiconductor light emitting devices 1050 move in a direction parallel to the substrate 161 at a position spaced apart from the substrate 161 by the magnetic force.
  • an electric field is generated by supplying power to the bi-planar electrode of the substrate 161 , and assembly is induced only at a preset position using this. That is, by using the selectively generated electric field, the semiconductor light emitting devices 1050 are self-assembled at the assembly position of the substrate 161 . To this end, cells in which the semiconductor light emitting devices 1050 are inserted may be provided on the substrate 161 .
  • the unloading process of the substrate 161 is performed, and the assembly process is completed.
  • the substrate 161 is an assembly substrate
  • a post-process for realizing a display device by transferring the semiconductor light emitting devices arranged as described above to a wiring board may be performed.
  • the magnet after guiding the semiconductor light emitting devices 1050 to the predetermined position, the magnet so that the semiconductor light emitting devices 1050 remaining in the fluid chamber 162 fall to the bottom of the fluid chamber 162 .
  • the 163 may be moved in a direction away from the substrate 161 ( FIG. 8D ).
  • the semiconductor light emitting devices 1050 remaining in the fluid chamber 162 fall to the bottom of the fluid chamber 162 .
  • the recovered semiconductor light emitting devices 1050 can be reused.
  • the self-assembly apparatus and method described above uses a magnetic field to concentrate distant parts near a predetermined assembly site to increase the assembly yield in fluidic assembly, and applies a separate electric field to the assembly site so that the parts are selectively transferred only to the assembly site. to be assembled.
  • the assembly board is placed on the upper part of the water tank and the assembly surface is directed downward to minimize the effect of gravity due to the weight of the parts and prevent non-specific binding to eliminate defects. That is, to increase the transfer yield, the assembly substrate is placed on the upper part to minimize the effect of gravity or frictional force, and to prevent non-specific binding.
  • the present invention it is possible to pixelate a semiconductor light emitting device in a large amount on a small-sized wafer and then transfer it to a large-area substrate. Through this, it is possible to manufacture a large-area display device at a low cost.
  • the present invention provides a structure and method of an assembling substrate for increasing the yield of the above-described self-assembly process and the process yield after self-assembly.
  • the present invention is limited when the substrate 161 is used as an assembly substrate. That is, the assembly board, which will be described later, is not used as a wiring board of the display device. Accordingly, the substrate 161 will be referred to as an assembly substrate 161 hereinafter.
  • the present invention improves the process yield in two respects. First, according to the present invention, an electric field is strongly formed at an unwanted position, and thus the semiconductor light emitting device is prevented from being seated at an unwanted position. Second, the present invention prevents the semiconductor light emitting devices from remaining on the assembly substrate when transferring the semiconductor light emitting devices seated on the assembly substrate to another substrate.
  • 10A to 10C are conceptual views illustrating a state in which a semiconductor light emitting device is transferred after the self-assembly process according to the present invention.
  • the semiconductor light emitting devices are seated at a preset position of the assembly substrate 161 .
  • the semiconductor light emitting devices seated on the assembly substrate 161 are transferred to another substrate at least once.
  • an embodiment in which the semiconductor light emitting devices mounted on the assembly substrate 161 are transferred twice is not limited thereto, and the semiconductor light emitting devices mounted on the assembly substrate 161 are transferred once or three times. It can be transferred to another substrate.
  • the assembly surface of the assembly substrate 161 is facing downward (or in the direction of gravity).
  • the assembly substrate 161 may be turned 180 degrees in a state in which the semiconductor light emitting device is seated.
  • a voltage must be applied to the plurality of electrodes 161c (hereinafter assembly electrodes) while the assembly substrate 161 is turned over. The electric field formed between the assembly electrodes prevents the semiconductor light emitting device from being separated from the assembly substrate 161 while the assembly substrate 161 is turned over.
  • the assembly substrate 161 After the self-assembly process, if the assembly substrate 161 is turned over by 180 degrees, the shape shown in FIG. 10A is obtained. Specifically, as shown in FIG. 10A , the assembly surface of the assembly substrate 161 is in a state facing upward (or in a direction opposite to gravity). In this state, the transfer substrate 400 is aligned above the assembly substrate 161 .
  • the transfer substrate 400 is a substrate for transferring the semiconductor light emitting devices seated on the assembly substrate 161 to the wiring substrate by detaching them.
  • the transfer substrate 400 may be formed of a polydimethylsiloxane (PDMS) material. Accordingly, the transfer substrate 400 may be referred to as a PDMS substrate.
  • PDMS polydimethylsiloxane
  • the transfer substrate 400 is pressed to the assembly substrate 161 after being aligned with the assembly substrate 161 . Thereafter, when the transfer substrate 400 is transferred to the upper side of the assembly substrate 161 , the semiconductor light emitting devices 350 disposed on the assembly substrate 161 are formed by the adhesion of the transfer substrate 400 to the transfer substrate. (400).
  • the surface energy between the semiconductor light emitting device 350 and the transfer substrate 400 should be higher than the surface energy between the semiconductor light emitting device 350 and the dielectric layer 161b.
  • the semiconductor light emitting device 350 is removed from the assembly substrate 161 . Since the probability of separation increases, it is preferable that the difference between the two surface energies is larger.
  • the transfer substrate 400 when the transfer substrate 400 is pressed against the assembly substrate 161 , the transfer substrate 400 includes a plurality of the transfer substrate 400 so that the pressure applied by the transfer substrate 400 is concentrated on the semiconductor light emitting device 350 . It may include a protrusion 410 . The protrusions 410 may be formed at the same spacing as the semiconductor light emitting devices seated on the assembly substrate 161 . When the projection 410 is aligned to overlap the semiconductor light emitting devices 350 and then the transfer substrate 400 is pressed against the assembly substrate 161 , the pressure by the transfer substrate 400 is applied to the semiconductor light emitting device. Only the elements 350 may be concentrated. Through this, the present invention increases the probability that the semiconductor light emitting device is separated from the assembly substrate 161 .
  • the semiconductor light emitting device is exposed to the outside of the groove while the semiconductor light emitting device is seated on the assembly substrate 161 .
  • the pressure of the transfer substrate 400 is not concentrated on the semiconductor light emitting devices 350 so that the semiconductor light emitting devices 350 are separated from the assembly substrate 161 . may be less likely to do so.
  • a protrusion 510 may be formed on the wiring board 500 .
  • the transfer substrate 400 and the wiring substrate 500 are aligned so that the semiconductor light emitting devices 350 disposed on the transfer substrate 400 and the protrusion 510 overlap each other. Thereafter, when the transfer substrate 400 and the wiring substrate 500 are compressed, the probability that the semiconductor light emitting devices 350 are separated from the transfer substrate 400 may increase due to the protrusion 510 . there is.
  • the surface energy between the semiconductor light emitting device 350 and the wiring board 500 is applied to the semiconductor light emitting device. It should be higher than the surface energy between 350 and the transfer substrate 400 . As the difference between the surface energy between the semiconductor light emitting device 350 and the wiring board 500 and the surface energy between the semiconductor light emitting device 350 and the transfer substrate 400 increases, the semiconductor light emitting device 350 is transferred to the transfer substrate 400 . ), the greater the difference between the two surface energies, the more preferable.
  • the structure of the wiring electrode and the method of forming the electrical connection may vary depending on the type of the semiconductor light emitting device 350 .
  • an anisotropic conductive film may be disposed on the wiring board 500 .
  • an electrical connection may be formed between the semiconductor light emitting devices 350 and the wiring electrodes formed on the wiring board 500 only by pressing the transfer substrate 400 and the wiring board 500 .
  • FIGS. 10A to 10C when manufacturing a display device including semiconductor light emitting devices that emit light of different colors, the method described with reference to FIGS. 10A to 10C may be implemented in various ways. Hereinafter, a method of manufacturing a display device including a semiconductor light emitting device that emits red (R), green (G), and blue (B) light will be described.
  • 11 to 13 are flowcharts illustrating a method of manufacturing a display device including a semiconductor light emitting device that emits red (R), green (G), and blue (B) light.
  • the semiconductor light emitting devices emitting different colors may be individually assembled on different assembly substrates.
  • the assembly substrate 161 includes a first assembly substrate on which semiconductor light emitting devices emitting a first color are mounted, a second assembly substrate on which semiconductor light emitting devices emitting a second color different from the first color are mounted, and a third assembly substrate on which semiconductor light emitting devices emitting a third color different from the first and second colors are mounted.
  • Different types of semiconductor light emitting devices are assembled on each assembly substrate according to the method described with reference to FIGS. 8A to 8E .
  • each of the semiconductor light emitting devices emitting red (R), green (G), and blue (B) light may be assembled on each of the first to third assembly substrates.
  • each of a RED chip, a green chip, and a BLUE chip may be assembled on each of the first to third assembly substrates RED TEMPLATE, GREEN TEMPLATE, and BLUE TEMPLATE.
  • each of the RED chip, the green chip, and the BLUE chip may be transferred to the wiring board by different transfer boards.
  • the step of transferring the semiconductor light emitting devices seated on the assembly substrate to the wiring board includes pressing the first transfer substrate (stamp (R)) on the first assembly substrate (RED TEMPLATE) to emit the first color.
  • the semiconductor light emitting devices (GREEN chip) emitting the second color are transferred from the second assembly substrate (GREEN TEMPLATE) to the second transfer substrate (stamp (G))
  • Step and pressing a third transfer substrate (stamp (B)) on the third assembling substrate (BLUE TEMPLATE) to apply the semiconductor light emitting devices (BLUE chips) emitting light of the third color to the third assembling substrate (BLUE TEMPLATE) ) to the third transfer substrate (stamp (B)) may include the step of transferring.
  • three types of assembly substrates and three types of transfer substrates are required to manufacture a display device including a RED chip, a green chip, and a BLUE chip.
  • each of a RED chip, a green chip, and a BLUE chip may be assembled on each of the first to third assembly substrates RED TEMPLATE, GREEN TEMPLATE, and BLUE TEMPLATE.
  • each of the RED chip, the GREEN chip, and the BLUE chip may be transferred to the wiring board by the same transfer board.
  • the step of transferring the semiconductor light emitting devices seated on the assembly substrate to the wiring board includes pressing the transfer substrate (RGB integrated stamp) to the first assembly substrate (RED TEMPLATE) to emit the first color.
  • alignment positions between each of the first to third assembly substrates and the transfer substrate may be different from each other.
  • the relative position of the transfer substrate with respect to the first assembly substrate and the relative position of the transfer substrate with respect to the second assembly substrate may be different from each other.
  • the transfer substrate may shift the alignment position by the PITCH of the SUB PIXEL whenever the type of assembly substrate is changed. In this way, when the transfer substrate is sequentially pressed to the first to third assembly substrates, all three types of chips may be transferred to the transfer substrate.
  • a step of transferring the semiconductor light emitting devices emitting light of the first to third colors from the transfer substrate to the wiring substrate by pressing the transfer substrate to the wiring substrate is performed.
  • a display device including a RED chip, a green chip, and a BLUE chip.
  • each of the RED chip, the green chip, and the BLUE chip may be assembled on one assembly substrate (RGB integrated TEMPLATE). In this state, each of the RED chip, the GREEN chip, and the BLUE chip may be transferred to the wiring board by the same transfer board (RGB integrated stamp).
  • one type of assembly substrate and one type of transfer substrate are required to manufacture a display device including a RED chip, a green chip, and a BLUE chip.
  • the manufacturing method may be implemented in various ways.
  • the present invention relates to an assembling substrate (hereinafter, a substrate for manufacturing a display device) of a new structure used in a method for manufacturing a display device (hereinafter referred to as a hybrid method) through the process according to FIGS. 10 to 13 and a method for manufacturing a display device using the same will be.
  • FIG. 14 is a view showing a structure (inside of an assembly hole) of a substrate for manufacturing a display device according to an exemplary embodiment
  • FIGS. 15A and 15B are structures of a substrate for manufacturing a display device (inside of an assembly hole) according to various embodiments of the present invention
  • FIG. 16 is a view showing a difference according to the presence or absence of a semiconductor light emitting device in an assembly hole in the substrate for manufacturing the display device according to FIG. 15A.
  • the substrate for display manufacturing may mean a substrate to which semiconductor light emitting devices are transferred through the self-assembly method shown in FIGS. 8A to 8E in a hybrid method.
  • the substrate for manufacturing a display device may include components for self-assembly, and may be distinguished from a wiring substrate on which wirings for lighting semiconductor light emitting devices are formed.
  • the substrate 1000 for manufacturing a display device according to the present invention may have a structure in which it is possible to easily check whether the semiconductor light emitting devices 1500 have a transfer defect by using light after self-assembly.
  • the substrate 1000 for manufacturing a display device includes a base part 1100 , assembly electrodes 1200 , a barrier rib part 1300 , a transmission preventing layer 1400 , an antireflection layer 1600 , and a dielectric layer 1700 . can do.
  • the base unit 1100 may be a flexible substrate or a rigid substrate formed of an insulating material. Also, according to the present invention, the base unit 1100 may be formed of a transparent material (light-transmitting material) so that light can pass therethrough. For example, glass or polyimide (PI) may be used as a material of the base unit 1100 .
  • PI polyimide
  • Assembly electrodes 1200 may be formed (or disposed) at predetermined intervals on the base unit 1100 .
  • the assembly electrodes 1200 may be a bar-shaped electrode extending in one direction, and may be formed in a manner such as ALD (atomic layer deposition), sputtering, E-beam deposition, electroplating, or the like. can be
  • ALD atomic layer deposition
  • sputtering sputtering
  • E-beam deposition electroplating
  • electroplating electroplating
  • the assembled electrodes 161c are formed of a non-resistive metal, for example, Ag, Cr, Ti, Al, Mo, Cu, or the like, so as to be advantageous in voltage transmission. Since these metal materials block (reflect or absorb) light, they are not suitable for forming the assembled electrodes 1200 constituting the substrate 1000 for manufacturing a display device according to the present invention.
  • the assembly electrodes 1200 may be formed of a material having high electrical conductivity and a light-transmitting material to allow light to pass therethrough.
  • the assembled electrodes 1200 may be formed of an oxide film material including any one or more of Ti, Zn, Sn, and In. That is, in the present invention, the assembled electrodes 1200 may be transparent electrodes such as ITO, IZO, or the like.
  • the assembly electrodes 1200 may be formed of the same material as described above and have a light transmittance of at least 80% or more.
  • the partition wall part 1300 may be stacked on the base part 1100 while forming assembly holes 1310 to overlap the assembly electrodes 1200 .
  • the semiconductor light emitting devices 1500 may be seated in the assembly holes 1310 formed by the barrier rib 1300 through self-assembly. That is, the barrier rib part 1300 may limit a position where the semiconductor light emitting device 1500 is assembled. In this case, the bottom and inner surfaces of the assembly holes 1310 in which the semiconductor light emitting device 1500 are seated may be a part of the partition wall part 1300 .
  • the barrier rib part 1300 may overlap two adjacent assembly electrodes (hereinafter, referred to as a pair electrode) that form an electric field so that the semiconductor light emitting devices 1500 can be seated inside the assembly holes 1310 . Since voltages of different polarities are applied to the pair electrodes, an electric field may be formed between the pair electrodes. Accordingly, an electric field may be formed in the assembly holes 1310 overlapping with the pair electrode at the same time, and the semiconductor light emitting devices 1500 may be seated therein.
  • a pair electrode two adjacent assembly electrodes
  • the barrier rib portion 1300 may be formed of an organic or inorganic insulating material, and may be stacked to a thickness of several hundred nm to several ⁇ m.
  • the organic or inorganic insulating material forming the barrier rib portion 1300 is a transparent material and may transmit light.
  • the substrate 1000 for manufacturing a display device may include a transmission preventing layer 1400 formed on the upper or lower portions of the barrier rib portion 1300 so as not to overlap the assembly holes 1310 .
  • the transmission-blocking layer 1400 is a layer for preventing light from being transmitted, and is preferably formed entirely in an area that does not overlap the assembly holes 1310 in the display manufacturing substrate 1000 to areas other than the assembly holes 1310. It can prevent light from passing through.
  • the permeation barrier layer 1400 may be formed above or below the barrier rib portion 1300 as described above. can be placed in
  • the transmission-blocking layer 1400 may be formed of a metal material capable of blocking light such as Ag, Cr, Ti, Al, Mo, Cu, etc. to have a thickness of 10 to 200 nm, through which the transmission-blocking layer 1400 is formed. It is possible to limit the transmittance of light to 30% or less.
  • the anti-transmission layer 1400 may serve to shield some electric fields leaking to the outside of the assembly holes 1310 during self-assembly. Through this, the probability that the semiconductor light emitting devices 1500 are incorrectly assembled on the barrier rib part 1300 may be reduced.
  • the substrate 1000 for manufacturing a display device may include an anti-reflection layer 1600 formed on the other surface of the base unit 1100 .
  • Light for inspection of transfer failure of the semiconductor light emitting devices 1500 may be irradiated from the anti-reflection layer 1600 side, and the anti-reflection layer 1600 is made of a material having light transmittance and a refractive index different from that of the base unit 1100 . Therefore, it is possible to minimize the phenomenon of reflection of light irradiated to the substrate.
  • the anti-reflection layer 1600 may be formed so that an oxide film material including one or more materials such as Ti, Zn, Si, Mg, etc. has a thickness of several tens of nm to several ⁇ m, and may have a light transmittance of at least 80% or more. Also, the anti-reflection layer 1600 may be formed in any regular or irregular pattern to have a surface roughness.
  • the substrate 1000 for manufacturing a display device may further include a dielectric layer 1700 formed along one surface of the barrier rib part 1300 .
  • the dielectric layer 1700 may be formed to cover the partition wall part 1300 along one surface of the partition wall part 1300 .
  • the permeation barrier layer 1400 is formed on the partition wall part 1300
  • the dielectric layer 1700 is formed along one surface of the partition wall part 1300 , but a part of the dielectric layer 1700 is on the partition wall part 1300 .
  • the formed penetration barrier layer 1400 may be covered.
  • the dielectric layer 1700 may be formed of a transparent inorganic insulating material such as SiO 2 or SiN x , and may have a thickness of several tens to several hundreds of nm.
  • the dielectric layer 1700 may be configured to protect the assembled electrodes 1200 . Specifically, after forming the partition wall part 1300 on the base part 1100 to cover the assembly electrodes 1200 , the partition wall part 1300 is over-etched and assembled in an etching process to form the assembly holes 1310 . Some of the electrodes 1200 may be exposed through the assembly holes 1310 . Accordingly, the assembled electrodes 1200 may be protected by forming the dielectric layer 1700 along one surface of the barrier rib portion 1300 .
  • the base unit 1100, the assembly electrodes 1200, the partition wall unit 1300, and the anti-reflection layer 1600 may be formed of a light-transmitting material. Accordingly, when light is irradiated to the substrate in a state in which the semiconductor light emitting device 1500 is not seated, light may be transmitted through the assembly holes 1310 , and light directed to the transmission preventing layer 1400 may be blocked.
  • the present invention it is possible to check whether the transfer of the semiconductor light emitting devices 1500 is defective by using the structure of the substrate.
  • the light directed toward the assembly hole 1310 in which the semiconductor light emitting device 1500 is seated is the semiconductor light emitting device 1500 , specifically, the metal constituting the semiconductor light emitting device 1500 .
  • Light is not transmitted by the first conductive electrode 1510 made of the material, and light directed toward the assembly hole 1310 in which the semiconductor light emitting device 1500 is not seated is transmitted as it is.
  • the assembly holes 1310 in which the semiconductor light emitting device 1500 is seated and the assembly holes 1310 in which the semiconductor light emitting device 1500 is not seated can be easily distinguished depending on whether light transmits. there is.
  • the self-assembly process shown in FIGS. 8A to 8E may be performed using the above-described substrate 1000 for manufacturing a display device.
  • (a) placing the semiconductor light emitting devices 1500 in the chamber 162 containing the fluid, and disposing the first substrate 1000 to which the semiconductor light emitting devices 1500 are to be transferred in the upper chamber 162 . can be performed.
  • the first substrate 1000 refers to the above-described substrate for manufacturing the display device.
  • Neutral DI water (de-ionized water) may be accommodated in the chamber 162, but is not limited thereto.
  • the semiconductor light emitting devices 1500 capable of self-assembly may be put into the chamber 162 .
  • the semiconductor light emitting devices 1500 may include a magnetic material (not shown) to be induced by magnetic force during self-assembly.
  • the semiconductor light emitting devices 1500 injected into the chamber 162 include a first conductive electrode 1510 , a first conductive semiconductor layer 1520 formed on the first conductive electrode 1510 , and a first An active layer 1530 formed on the conductive semiconductor layer 1520, a second conductive semiconductor layer 1540 formed on the active layer 1530, and a second conductive electrode formed on the second conductive semiconductor layer 1540 ( 1550), including a vertical type.
  • At least one of the first conductive electrode 1510 and the second conductive electrode 1550 of the semiconductor light emitting device 1500 may include a magnetic material.
  • the magnetic material may be a magnetic metal such as Ni or SmCo, and may be formed in the form of particles or may be one layer constituting the first and second conductivity-type electrodes 1510 and 1550 .
  • the semiconductor light emitting devices 1500 may be formed to be symmetrical with respect to at least one direction in order to secure direction selectivity during self-assembly.
  • the semiconductor light emitting devices 1500 may be formed in a circular or oval shape.
  • the first substrate 1000 may be disposed above the chamber 162 into which the fluid and semiconductor light emitting devices 1500 are introduced.
  • the assembly surface may be immersed in the fluid in a state where the surface (hereinafter, the assembly surface) to which the semiconductor light emitting devices 1500 is to be transferred faces the bottom surface of the chamber 162 .
  • the first substrate 1000 may include components for self-assembly on the assembly surface. Specifically, the assembly electrodes 1200 and the barrier rib part 1300 are included on the base part 1100 , and a dielectric layer 1700 may be further included. In addition, the assembly holes 1310 partitioned by the partition wall part 1300 may be provided in a matrix arrangement of a plurality of rows and columns so that the semiconductor light emitting devices 1500 can be seated on the assembly surface. All of the components formed on the assembly surface of the first substrate 1000 may be formed of a light-transmitting material.
  • the penetration preventing layer 1400 may be formed on the upper or lower portions of the partition wall portion 1300 so as not to overlap the assembly holes 1310 .
  • the transmission blocking layer 1400 may be formed of a material capable of blocking light, for example, a metal material.
  • the transmission blocking layer 1400 may be configured to inspect whether the semiconductor light emitting devices 1500 are defective in transfer after self-assembly.
  • the other surface of the base unit 1100 may further include an anti-reflection layer 1600 formed of a light-transmitting material.
  • the anti-reflection layer 1600 may be configured to inspect whether the semiconductor light emitting devices 1500 are defective in transfer after self-assembly.
  • (b) transferring the semiconductor light emitting devices 1500 injected into the chamber 162 to a preset position of the first substrate 1000 using an electric field and a magnetic field may be performed.
  • the preset positions may be the assembly holes 1310 partitioned by the partition wall part 1300 , and the semiconductor light emitting devices 1500 may be seated inside the assembly holes 1310 .
  • a magnetic field may be applied through a magnet array provided on the opposite side of the assembly surface.
  • the distance between one surface (opposite side of the assembly surface) of the first substrate 1000 and the magnet array can be maintained within several mm. .
  • a predetermined voltage may be applied to the assembly electrodes 1200 to form an electric field on the assembly surface of the first substrate 1000 .
  • Steps (a) and (b) described above are performed in a state in which the first substrate 1000 is disposed so that the semiconductor light emitting devices 1500 are seated in advance, that is, the assembly holes 1310 face the direction of gravity.
  • This step may be performed in a state in which the substrate disposed so that the assembly surface faces the bottom surface of the chamber 162 is turned 180°. That is, step (c) may be performed in a state in which the assembly surface on which the assembly holes 1310 are formed faces in a direction opposite to gravity.
  • light for checking whether the transfer is defective may be irradiated from the other surface side of the base unit 1100 on which the anti-reflection layer 1600 is formed.
  • FIG. 17 is a view showing a problem of the conventional method of manufacturing a display device using the substrate for manufacturing the display device according to FIG. 14 .
  • the semiconductor light emitting devices 1500 transferred to the assembly substrate 161 through the processes shown in FIGS. 10 to 13 are transferred to the final substrate 168 on which wiring and the like are formed.
  • the semiconductor light emitting device 1500 is not transferred to the region on the final substrate 168 corresponding to the assembly holes 161d on which the semiconductor light emitting device 1500 on the assembly substrate 161 is not seated.
  • the semiconductor light emitting device 1500 is normally seated in most of the assembly holes 161d of the assembly substrate 161 through self-assembly (region A), but the semiconductor light emitting device 1500 is installed in some assembly holes 161d. It may not be seated (area B). In this state, when the semiconductor light emitting devices 1500 transferred to the assembly substrate 161 are transferred to the final substrate 168 , the final substrate 168 corresponding to the region B where the semiconductor light emitting device 1500 is not seated. There is a problem in that the semiconductor light emitting device 1500 is not transferred to the upper region.
  • FIG. 18 is a view illustrating a method of inspecting whether a semiconductor light emitting device has a transfer defect in a method of manufacturing a display device using a substrate for manufacturing a display device according to the present invention
  • FIG. 19 is a view illustrating a manufacturing method of the display device according to the present invention It is a conceptual diagram for
  • Steps when self-assembly of the semiconductor light emitting devices 1500 is completed, (c) irradiating light from one side of the first substrate 1000 to inspect whether the semiconductor light emitting devices 1500 are defective in transfer. Steps may be performed.
  • light may be irradiated from the other surface side of the base unit 1100 on which the anti-reflection layer 1600 is formed, and the third substrate 3000 for checking the light transmittance is disposed on one side of the base unit 1100 .
  • a portion of the first substrate 1000 through which light is transmitted may appear as a bright region on the third substrate 3000 , and the region may correspond to the poor transfer region (non-transfer region, B) of the semiconductor light emitting device 1500 .
  • the region excluding the region in which the transmission preventing layer 1400 is formed, that is, the assembly holes 1310 corresponding to Light may be transmitted through the area.
  • the semiconductor light emitting device 1500 when the semiconductor light emitting device 1500 is seated inside the assembly holes 1310 , light is blocked by the first conductive electrode 1510 of the semiconductor light emitting device 1500 , so that light passes through the assembly holes 1310 . It may not be permeable. In particular, in the case of a vertical type semiconductor light emitting device, since the first conductive electrode 1510 is formed to have substantially the same area as the epitaxial layer, light is hardly transmitted through the assembly hole 1310 .
  • the semiconductor light emitting device 1500 can be inspected for defective transfer.
  • the above-described step of inspecting whether the semiconductor light emitting device 1500 has a transfer defect may be performed for each divided region after dividing the first substrate 1000 into a plurality of regions.
  • the first substrate 1000 may be divided into 16 regions (4x4).
  • the 16 regions divided as described above may be regions having an area corresponding to that of the third substrate 3000 .
  • the step of inspecting whether the semiconductor light emitting device 1500 has a transfer defect may be performed for each of 16 regions.
  • Each of the regions may correspond to any one of a good region not including the transfer defective region B and a defective region including at least one poor transfer region B.
  • regions 3, 4, 5, and 12 correspond to defective regions since they include one transfer defective region (B), and the remaining regions are regions (A) in which the semiconductor light emitting device is normally assembled. It may correspond to a good product area consisting only of
  • step (d) transferring the semiconductor light emitting devices 1500 transferred to the first substrate 1000 to the second substrate 2000 on which wiring is formed may be performed.
  • step (d) may be selectively performed only on regions corresponding to the non-defective region of the first substrate 1000 .
  • can Step (d) may be performed using a transfer stamp of the PDMS material.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

Un substrat pour fabriquer un dispositif d'affichage, selon la présente invention, comprend : une partie de base ; des électrodes d'assemblage s'étendant dans une direction et agencées à des intervalles prédéterminés sur une surface de la partie de base ; et des parties barrière empilées sur la partie de base tout en formant des trous d'assemblage, dans lesquels des dispositifs électroluminescents à semi-conducteur sont placés, de manière à se chevaucher avec les électrodes d'assemblage, le substrat comprenant des couches de prévention de transmission formées sur le dessus ou le fond des parties barrière de façon à ne pas chevaucher les trous d'assemblage, et une couche de prévention de réflexion formée sur l'autre surface de la partie de base.
PCT/KR2020/010525 2020-08-10 2020-08-10 Substrat pour fabrication de dispositif d'affichage et procédé de fabrication de dispositif d'affichage l'utilisant WO2022034931A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020227045739A KR20230021016A (ko) 2020-08-10 2020-08-10 디스플레이 장치 제조용 기판 및 이를 이용한 디스플레이 장치의 제조방법
PCT/KR2020/010525 WO2022034931A1 (fr) 2020-08-10 2020-08-10 Substrat pour fabrication de dispositif d'affichage et procédé de fabrication de dispositif d'affichage l'utilisant

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PCT/KR2020/010525 WO2022034931A1 (fr) 2020-08-10 2020-08-10 Substrat pour fabrication de dispositif d'affichage et procédé de fabrication de dispositif d'affichage l'utilisant

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WO2022034931A1 true WO2022034931A1 (fr) 2022-02-17

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
WO2024025019A1 (fr) * 2022-07-29 2024-02-01 엘지전자 주식회사 Structure de substrat d'assemblage pour élément électroluminescent à semi-conducteur destiné à un pixel d'affichage, et dispositif d'affichage la comprenant

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KR20140100811A (ko) * 2013-02-07 2014-08-18 (주)아이엠에스나노텍 엘이디 패키지의 렌즈 외관 검사장치
KR20190075869A (ko) * 2019-06-11 2019-07-01 엘지전자 주식회사 마이크로 led를 이용한 디스플레이 장치 및 이의 제조 방법
KR20190085892A (ko) * 2019-07-01 2019-07-19 엘지전자 주식회사 마이크로 led를 이용한 디스플레이 장치 및 이의 제조 방법
US10446728B2 (en) * 2014-10-31 2019-10-15 eLux, Inc. Pick-and remove system and method for emissive display repair
KR20200014867A (ko) * 2020-01-22 2020-02-11 엘지전자 주식회사 반도체 발광소자의 자가조립 장치 및 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140100811A (ko) * 2013-02-07 2014-08-18 (주)아이엠에스나노텍 엘이디 패키지의 렌즈 외관 검사장치
US10446728B2 (en) * 2014-10-31 2019-10-15 eLux, Inc. Pick-and remove system and method for emissive display repair
KR20190075869A (ko) * 2019-06-11 2019-07-01 엘지전자 주식회사 마이크로 led를 이용한 디스플레이 장치 및 이의 제조 방법
KR20190085892A (ko) * 2019-07-01 2019-07-19 엘지전자 주식회사 마이크로 led를 이용한 디스플레이 장치 및 이의 제조 방법
KR20200014867A (ko) * 2020-01-22 2020-02-11 엘지전자 주식회사 반도체 발광소자의 자가조립 장치 및 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024025019A1 (fr) * 2022-07-29 2024-02-01 엘지전자 주식회사 Structure de substrat d'assemblage pour élément électroluminescent à semi-conducteur destiné à un pixel d'affichage, et dispositif d'affichage la comprenant

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