WO2022033600A1 - 一种石墨烯与量子点共掺杂的聚合物和制备方法以及应用 - Google Patents

一种石墨烯与量子点共掺杂的聚合物和制备方法以及应用 Download PDF

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WO2022033600A1
WO2022033600A1 PCT/CN2021/115949 CN2021115949W WO2022033600A1 WO 2022033600 A1 WO2022033600 A1 WO 2022033600A1 CN 2021115949 W CN2021115949 W CN 2021115949W WO 2022033600 A1 WO2022033600 A1 WO 2022033600A1
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graphene
quantum dots
polymer
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曹明轩
张彦军
王颖
王志文
杜大明
乐庆胜
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Wuyi University Fujian
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/04—Carbon
    • C08K3/042—Graphene or derivatives, e.g. graphene oxides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/30—Sulfur-, selenium- or tellurium-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/30—Sulfur-, selenium- or tellurium-containing compounds
    • C08K2003/3009—Sulfides
    • C08K2003/3036—Sulfides of zinc

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  • the invention belongs to the field of quantum dots, and in particular relates to a graphene-quantum dot co-doped polymer, preparation method and application.
  • Random lasers use strongly scattering, disordered, and aperiodic media as resonators, and have the characteristics of low threshold, small size, no resonator structure, simple process, short preparation period and low cost, making them suitable for photonic integration, It has broad application prospects in optical sensing, optical fiber communication, tumor detection, wearable devices, etc.
  • Polymer dispersed liquid crystal is to make liquid crystal uniformly dispersed in the prepolymer network or polymer matrix in the form of droplets by a certain method, and use the dielectric anisotropy of liquid crystal molecules to obtain materials with electro-optical response characteristics. It is often used in Among the random lasers, it is called polymer dispersed liquid crystal random laser.
  • Existing random lasers with polymer structures generally use polymers as laser scattering media and specific materials as laser gain media (working media).
  • graphene quantum dots are emerging carbon-based quantum dots that have received extensive attention due to their unique properties and wide-ranging applications. They are more photostable, biocompatible and environmentally friendly than some conventional scatterers. Due to their outstanding properties, they can be regarded as promising alternatives to heavy metal quantum dots in many applications, including light-emitting diodes, solar cells, bioimaging, biosensing, and photocatalysis.
  • Dye is a common laser gain medium, and the random lasers of dye-doped polymers have the following disadvantages: high laser emission threshold and large full width at half maximum; poor photostability and difficult change of emission band; complex synthesis process, long production cycle and high cost. Therefore, it is urgent to find a new technology that can overcome the above-mentioned defects of random lasers.
  • the invention aims to improve the defects of the prior art, and provides a co-doped polymer of graphene and quantum dots, and the quantum dots here are selected from perovskite quantum dots and semiconductor quantum dots.
  • the advantages include: good photostability and easy adjustment of the emission band; low laser emission threshold and small full width at half maximum; simple synthesis process, short production cycle and low cost, and has a wide range of Commercial prospects.
  • An object of the present invention is to provide a polymer co-doped with graphene and quantum dots, which can be achieved by the following techniques.
  • a graphene and quantum dot co-doped polymer prepared from the following components:
  • the semiconductor quantum dots are selected from ZnCdSeS/ZnS quantum dots or perovskite quantum dots,
  • the perovskite quantum dots are CsPbX 3 perovskite quantum dots, and X is selected from Cl, Br or I;
  • the photosensitive polymer is selected from polymethyl methacrylate, polymethyl acrylate, polyethyl acrylate, polyamino acrylate, polyhydroxypropyl acrylate or urethane acrylate;
  • the photoinitiator is selected from phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide, 2-hydroxy-methylphenylpropan-1 ketone, 1-hydroxycyclohexylphenyl One or more of ketone, benzoin dimethyl ether, 2-phenylbenzyl-2-dimethylamine-1-(4-morpholinebenzylphenyl)butanone or 2-isopropylthioxanthone.
  • Another object of the present invention is to provide the preparation method of the above-mentioned graphene and quantum dot co-doped polymer, which is realized by the following technology, which comprises the following steps:
  • the stirring method is as follows: ultrasonication is performed first, and then mechanical stirring is performed.
  • the ultrasonic time is 1-4h
  • the mechanical stirring time is 2-5h.
  • the wavelength of the ultraviolet light is 200-365 nm.
  • UV curing time is ⁇ 5 seconds.
  • steps (1)-(4) are carried out in the dark.
  • Another object of the present invention is to provide the application of the above-mentioned graphene and quantum dot co-doped polymer in random lasers.
  • the present invention provides a kind of graphene and quantum dots co-doped polymer and preparation method thereof, the raw material used is common chemicals, simple and easy to obtain; the preparation process is simple, and the cost is low; the required preparation conditions are not harsh , so it has broad commercial prospects.
  • the present invention provides a random laser containing the above-mentioned graphene and quantum dot co-doped polymer, which overcomes the problems of high light laser emission threshold and large full width at half maximum of the random laser of general dye-doped polymer;
  • the random laser disclosed by the invention has the following advantages: good photostability and easy adjustment of emission band; low laser emission threshold and small full width at half maximum; simple synthesis process, short production cycle and low cost, and has broad commercialization prospects .
  • FIG. 1 is an optical microscope image of a polymer co-doped with graphene and quantum dots in Example 1.
  • FIG. 1 is an optical microscope image of a polymer co-doped with graphene and quantum dots in Example 1.
  • FIG. 2 is an optical microscope image of a polymer co-doped with graphene and quantum dots in Example 2.
  • FIG. 3 is an optical microscope image of a polymer co-doped with graphene and quantum dots in Example 3.
  • FIG. 4 is a schematic structural diagram of a random laser of a polymer co-doped with graphene and quantum dots in Example 4.
  • FIG. 4 is a schematic structural diagram of a random laser of a polymer co-doped with graphene and quantum dots in Example 4.
  • graphene is purchased from Xianfeng Nano, and the model is XF002-2.
  • ZnCdSeS/ZnS semiconductor quantum dots and CsPbBr 3 perovskite semiconductor quantum dots were purchased from Guangdong Pujiafu Optoelectronics Technology Co., Ltd.
  • a graphene and quantum dot co-doped polymer prepared from:
  • the above-mentioned graphene and quantum dot co-doped polymers are prepared by the following methods:
  • the stirring methods of the above steps (2) and (3) are specifically as follows: firstly, ultrasonically sonicate for 4 h with an ultrasonic instrument, and then stir for 5 h with a mechanical stirring method.
  • Figure 1 shows an optical microscope image of a polymer co-doped with graphene and quantum dots, which shows that after curing with UV light, the graphene is well dispersed without clustering.
  • a graphene and quantum dot co-doped polymer prepared from:
  • the above-mentioned graphene and quantum dot co-doped polymers are prepared by the following methods:
  • the stirring methods of the above steps (2) and (3) are as follows: firstly, ultrasonically sonicate for 1 h with an ultrasonic instrument, and then stir for 2 h with a mechanical stirring method.
  • Figure 2 shows the optical microscope image of the polymer co-doped with graphene and quantum dots, which shows that the structure formed by co-doping graphene and quantum dots is relatively good, but graphene clusters appear in the figure. , which is due to the addition of graphene in a slight excess.
  • a graphene and quantum dot co-doped polymer prepared from:
  • the above-mentioned graphene and quantum dot co-doped polymers are prepared by the following methods:
  • the stirring methods of the above steps (2) and (3) are as follows: first ultrasonically sonicate for 2 h with an ultrasonic instrument, and then stir with a mechanical stirring method for 3 h.
  • Figure 3 shows the optical microscope image of the graphene and quantum dot co-doped polymer, which shows that the graphene and quantum dot co-doped polymer structure starts to become irregular at this time, because when the graphene When the added amount of the graphene is too large, more clusters are formed in the polymer structure co-doped with graphene and quantum dots.
  • This embodiment relates to the application of a graphene and quantum dot co-doped polymer in a random laser.
  • Figure 4 shows the structure of a random laser of a polymer co-doped with graphene and quantum dots.
  • the components of the random laser and the functions of each component are as follows:
  • Working medium and resonant cavity (2) Proper working medium must be selected for the generation of laser, which can be gas, liquid, solid or semiconductor. Population inversion can be achieved in this medium to create the necessary conditions for obtaining laser light. Quantum dots are used here as the working medium.
  • Graphene and quantum dot co-doped polymers serve as resonant cavities.
  • Spectrometer (3) and spectrometer probe (4) collect spectral information of the outgoing laser light.
  • Sample exit light (5) The light source collected by the spectrometer.
  • Focusing lens (6) its function is to focus the emission light spot, so that the light energy irradiated on the surface of the polymer co-doped with graphene and quantum dots is more concentrated.
  • the pump source causes the particle number inversion in the working medium, and a certain method must be used to excite the atomic system to increase the number of particles in the upper energy level and generate laser radiation.
  • a pulsed light source is used as a pumping source to illuminate the working medium, and the pumping process is also called "pumping".
  • a pulsed laser acts as a pump source.
  • the pump laser source is an ultraviolet pulse laser
  • the pulse frequency is 1Hz-1000Hz
  • the pulse energy is >1 ⁇ J.
  • the semiconductor quantum dots emit fluorescence.
  • the fluorescence is strongly scattered by the polymer to form a random closed resonant cavity, and after reaching the laser threshold, random laser radiation is generated.
  • Graphene acts as a scatterer to enhance random laser radiation intensity.
  • the test principle is: after the laser emitted by the pump source passes through the focusing lens, the energy is more concentrated, and then irradiates the sample to cause the particle number inversion in the working medium to generate laser radiation. After the data is collected by the spectrometer, the data can be analyzed and tested. data.
  • Example 3 The sample of Example 1, the ZnCdSeS/ZnS semiconductor quantum dot-doped polymer (comparative sample 1), the dye-doped polymer (comparative sample 2) and the perovskite quantum dots were doped with the random laser tester shown in FIG. Four samples of the heteropolymer (Comparative Sample 3) were tested.
  • Comparative Sample 1 does not contain the graphene described in Example 1.
  • the types of ingredients, the mass fractions of ingredients and the preparation method of the comparative sample 2 and Example 1 are all the same, the only difference is that in the comparative sample 2, the ZnCdSeS/ZnS quantum dots described in Example 1 are replaced by the dye R6G in the same mass fraction. , and does not contain graphene.
  • Comparative Sample 3 does not contain the graphene described in Example 2.
  • Table 1 shows random lasing threshold and emitted light intensity data for the four samples.

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Abstract

本发明涉及一种石墨烯与量子点共掺杂的聚合物及其制备方法，由以下成分制得：石墨烯1-3份；半导体量子点5-15份；光敏聚合物20-74份；光引发剂1-5份。本发明还涉及石墨烯与量子点共掺杂的聚合物的制备方法，以及在随机激光器中的应用。本发明的石墨烯与量子点共掺杂的聚合物应用于随机激光器，具有较好光稳定性且发射波段容易调节；激光发射阈值低且半峰全宽小；合成工艺简易、生产周期短且费用低的优点，具有广阔的商业化前景。

Description

一种石墨烯与量子点共掺杂的聚合物和制备方法以及应用 技术领域
本发明属于量子点领域，具体涉及一种石墨烯与量子点共掺杂的聚合物和制备方法以及应用。
背景技术
激光技术已经在工业，医疗和通信等众多领域取得了广泛应用。随机激光器核心部件包括泵浦源，工作介质和谐振腔三要素。由谐振腔选择频率一定、方向一致的光作最优先的放大，而抑制其他频率和方向的光，形成驻波振荡，最终以激光的形式出射。随机激光器以强散射的、无序的、非周期性的介质作为谐振腔，具有阈值低、尺寸小、无谐振腔结构、工艺简单、制备周期短以及造价低廉等特点，使其在光子集成、光学传感、光纤通信、肿瘤检测、可穿戴器件等方面具有广阔的应用前景。
聚合物分散液晶，是通过一定方法使得液晶以微滴的形式均匀的分散在预聚物网络或者聚合物基体中，利用液晶分子的介电各向异性获得具有电光响应特性的材料，常应用于随机激光器中，称为聚合物分散液晶随机激光器。现有的聚合物结构随机激光器一般是利用聚合物作为激光散射介质、特定材料作为激光增益介质(工作介质)进行工作。
基于石墨烯的随机激光的最新发展，凸显了石墨烯在实现适用于设计高性能光电和纳米电子器件的新型随机激光中的作用。石墨烯是sp 2杂化的碳原子的二维蜂窝状晶格，其出众的性能是众所周知的，可以通过化学掺杂，外部磁场和施加的电压进行调整。在最近对石墨烯的随机激光的研究中，高度多孔的垂直石墨烯壁网络被用来散射钙钛矿纳米晶体的发射光，并为实现随机激光作用和超低阈值能量密度提供重要的光学反馈。
另一方面，考虑到相关生物成像和生物传感应用的不断发展，需要开发低毒且光稳定性更高的量子点。这样，石墨烯量子点是新兴的基于碳的量子点，因其独特的性能和广泛的应用而受到了广泛的关注。它们比传统的一些散射体更具光稳定性，生物相容性和环境友好性。由于其出色的性能，在许多应用中，包括发光二极管、太阳能电池、生物成像、生物传感和光催化中，可以视为重金属量子点有希望的替代品。
染料是常见的激光增益介质，染料掺杂聚合物的随机激光器缺点在于：激光发射阈值高、且半峰全宽大；光稳定性差且发光波段不易变化；合成工艺复杂、生产周期长且费用高。因此亟需找到一种能克服上述随机激光器缺陷的新的技术。
发明内容
本发明旨在改进现有技术的缺陷，提供了石墨烯与量子点共掺杂的聚合物，这里的量子点选取钙钛矿量子点与半导体量子点。所述聚合物应用于随机激光器，具有的优点包括：较好光稳定性且发射波段容易调节；激光发射阈值低且半峰全宽小；合成工艺简易、生产周期短且费用低，具有广阔的商业化前景。
本发明的一个目的为提供石墨烯与量子点共掺杂的聚合物，通过以下技术得以实现。
一种石墨烯与量子点共掺杂的聚合物，其由以下成分制得：
Figure PCTCN2021115949-appb-000001
进一步地，所述半导体量子点选自ZnCdSeS/ZnS量子点或钙钛矿量子点，
所述钙钛矿量子点为CsPbX 3钙钛矿量子点，X选自Cl、Br或I；
进一步地，所述光敏聚合物选自聚甲基丙烯酸甲酯、聚丙烯酸甲酯、聚丙烯酸乙酯、聚氨基丙烯酸酯、聚羟丙基丙烯酸酯或聚氨酯丙烯酸酯；
进一步地，所述光引发剂选自苯基双(2,4,6-三甲基苯甲酰基)氧化膦、2-羟基-甲基苯基丙烷-1酮、1-羟基环己基苯基酮、安息香双甲醚、2-苯基苄-2-二甲基胺-1-(4-吗啉苄苯基)丁酮或2-异丙基硫杂蒽酮的一种或几种。
本发明的另一个目的为提供上述石墨烯与量子点共掺杂的聚合物的制备方法，其通过以下技术得以实现，其包括如下步骤：
(1)将光敏聚合物与光引发剂共混形成混合溶液；
(2)将半导体量子点加入混合溶液中，进行搅拌，得到溶液A；
(3)将石墨烯加入混合溶液A中，进行搅拌，得到溶液B；
(4)用紫外光对溶液B进行紫外光固化。
进一步地，所述(2)和(3)中，搅拌的方法为：先进行超声，然后再进行机械搅拌。
进一步地，所述超声的时间为1-4h，所述机械搅拌的时间为2-5h。
进一步地，所述紫外光的波长为200-365nm。
进一步地，所述紫外光固化时间≥5秒。
进一步地，所述(1)-(4)步骤在避光下进行。
本发明的另一个目的为提供上述石墨烯与量子点共掺杂的聚合物在随机激光器中的应 用。
本发明具有以下有益效果：
1.本发明提供了一种石墨烯与量子点共掺杂的聚合物及其制备方法，所采用的原料为常见化学品，简单易得；制备工艺简单，成本低廉；要求的制备条件不苛刻，因此具有广阔的商业化前景。
2.本发明提供了一种含有上述石墨烯与量子点共掺杂的聚合物的随机激光器，克服了一般染料掺杂聚合物的随机激光器光激光发射阈值高，半峰全宽大的问题；本发明公开的随机激光器，具有的优点包括：较好光稳定性且发射波段容易调节；激光发射阈值低且半峰全宽小；合成工艺简易、生产周期短且费用低，具有广阔的商业化前景。
附图说明
图1为实施例1中，石墨烯与量子点共掺杂的聚合物的光学显微镜图。
图2为实施例2中，石墨烯与量子点共掺杂的聚合物的光学显微镜图。
图3为实施例3中，石墨烯与量子点共掺杂的聚合物的光学显微镜图。
图4为实施例4中，石墨烯与量子点共掺杂的聚合物的随机激光器的结构示意图。
附图中的标号所对应的结构为：
1-泵浦激光；2-工作介质和谐振腔；3-光谱仪；4-光谱仪探头；5-随机激光；6-聚焦透镜；7-泵浦源。
具体实施方式
以下结合具体实施例对本发明中石墨烯与量子点共掺杂的聚合物及其制备方法，以及相关随机激光器结构作具体说明。但本发明所要求的保护范围并不局限于本发明实施例所涉及的范围。除非特别提及，否则本专利公开的实施例中所提及的溶剂和测试方法均为本领域技术人员所知的常规方法。
本发明所述实施例中，石墨烯采购自先丰纳米，型号为XF002-2。
ZnCdSeS/ZnS半导体量子点与CsPbBr 3钙钛矿半导体量子点均采购自广东普加福光电科技有限公司。
实施例1
一种石墨烯与量子点共掺杂的聚合物，由以下成分制得：
Figure PCTCN2021115949-appb-000002
Figure PCTCN2021115949-appb-000003
上述石墨烯与量子点共掺杂的聚合物是通过以下方法制备而成的：
(1)按上述质量份数，将聚甲基丙烯酸甲酯与聚甲基丙烯酸甲酯共混形成混合溶液；
(2)将质量份数为5份的ZnCdSeS/ZnS量子点加入混合溶液中，搅拌均匀，得到溶液A；
(3)将石墨烯与量子点共掺杂的聚合物的掺杂浓度为：1份加入混合溶液A中，进行搅拌，得到溶液B；
(4)用200nm紫外光对溶液B进行紫外光固化，时间为6秒。
上述步骤(2)和(3)的搅拌方法具体为：先用超声仪超声4h，然后再用机械搅拌的方式搅拌5h。
上述步骤(1)-(4)全程避光。
图1示出了石墨烯与量子点共掺杂的聚合物的光学显微镜图，其表明了在用紫外光固化后，石墨烯分散的比较好，没有出现团簇现象。
实施例2
一种石墨烯与量子点共掺杂的聚合物，由以下成分制得：
Figure PCTCN2021115949-appb-000004
上述石墨烯与量子点共掺杂的聚合物是通过以下方法制备而成的：
(1)按上述质量份数，将聚丙烯酸甲酯与2-羟基-甲基苯基丙烷-1酮共混形成混合溶液；
(2)将质量份数为15份的CsPbBr 3钙钛矿量子点加入混合溶液中，搅拌均匀，得到溶液A；
(3)将石墨烯与量子点共掺杂的聚合物的掺杂浓度为：2份加入混合溶液A中，进行搅拌，得到溶液B；
(4)用365nm紫外光对溶液B进行紫外光固化，时间为5秒。
上述步骤(2)和(3)的搅拌方法具体为：先用超声仪超声1h，然后再用机械搅拌的方式搅拌2h。
上述步骤(1)-(4)全程避光。
图2示出了石墨烯与量子点共掺杂的聚合物的光学显微镜图，其表明了石墨烯与量子点共掺杂形成的结构是比较好的，但是图中出现了石墨烯团簇现象，这是因为石墨烯的加入稍 微过量的缘故。
实施例3
一种石墨烯与量子点共掺杂的聚合物，由以下成分制得：
Figure PCTCN2021115949-appb-000005
上述石墨烯与量子点共掺杂的聚合物是通过以下方法制备而成的：
(1)按上述质量份数，将聚氨基丙烯酸酯与安息香双甲醚共混形成混合溶液；
(2)将质量份数为5份的ZnCdSeS/ZnS量子点加入混合溶液中，搅拌均匀，得到溶液A；
(3)将石墨烯与量子点共掺杂的聚合物的掺杂浓度为：3份加入混合溶液A中，进行搅拌，得到溶液B；
(4)用300nm紫外光对溶液B进行紫外光固化，时间为7秒。
上述步骤(2)和(3)的搅拌方法具体为：先用超声仪超声2h，然后再用机械搅拌的方式搅拌3h。
上述步骤(1)-(4)全程避光。
图3示出了石墨烯与量子点共掺杂的聚合物的光学显微镜图，其表明了此时石墨烯与量子点共掺杂的聚合物结构开始变得不规则，这是因为当石墨烯的量加入量过多时，石墨烯与量子点共掺杂的聚合物结构中形成较多的团簇。
实施例4
本实施例涉及一种石墨烯与量子点共掺杂的聚合物在随机激光器中的应用。
图4示出了石墨烯与量子点共掺杂的聚合物的随机激光器的结构。所述随机激光器组成部件及各个部件作用如下所述：
泵浦出射激光(1)：提供泵浦样品所需的能量。
工作介质和谐振腔(2)：激光的产生必须选择合适的工作介质，可以是气体、液体、固体或半导体。在这种介质中可以实现粒子数反转，以制造获得激光的必要条件。在此处用量子点作为工作介质。
石墨烯与量子点共掺杂的聚合物作为谐振腔。
光谱仪(3)和光谱仪探头(4)：采集出射激光的光谱信息。
样品出射光(5)：光谱仪收集的光源。
聚焦透镜(6)：其作用为聚焦发射光斑，使得照射到石墨烯与量子点共掺杂的聚合物表面的光能量更集中。
泵浦源(7)：泵浦源使工作介质中出现粒子数反转，必须用一定的方法去激励原子体系，使处于上能级的粒子数增加，产生激光辐射。这里使用脉冲光源作为泵浦源来照射工作介质，泵浦过程又称“抽运”。脉冲激光器就起到了泵浦源的作用。
随机激光器工作原理为：泵浦激光源为紫外脉冲激光器，脉冲频率为1Hz-1000Hz，脉冲能量>1μJ。通过泵浦激光的抽运作用，半导体量子点发出荧光。荧光经过聚合物的强烈散射，形成随机的闭合谐振腔，达到激光阈值后，产生随机激光辐射。石墨烯作为散射体，增强随机激光辐射强度。
相关测试
测试原理为：泵浦源出射的激光经过聚焦透镜后，能量更加集中，然后照射到样品上使工作介质中出现粒子数反转，产生激光辐射，经过光谱仪采集数据就可以进行数据分析，得到测试数据。
利用图4出的随机激光测试器分别对实施例1的样品、ZnCdSeS/ZnS半导体量子点掺杂聚合物(对比样品1)、染料掺杂聚合物(对比样品2)和钙钛矿量子点掺杂聚合物(对比样品3)的四个样品进行测试。
其中，对比样品1和实施例1的成分种类、成分的质量份数和制备方法均相同，唯一区别在于，对比样品1中不含有实施例1所述的石墨烯。
对比样品2和实施例1的成分种类、成分的质量份数和制备方法均相同，唯一区别在于，对比样品2中以等质量份数的染料R6G替代实施例1所述的ZnCdSeS/ZnS量子点，并且不含有石墨烯。
对比样品3和实施例2的成分种类、成分的质量份数和制备方法均相同，唯一区别在于，对比样品3中不含有实施例2所述的石墨烯。
表1示出了四个样品的随机激光阈值和发射光强度数据。
表1四个样品的随机激光阈值和发射光强度数据
Figure PCTCN2021115949-appb-000006

Claims (10)

  1. 一种石墨烯与量子点共掺杂的聚合物，其特征在于，所述石墨烯与量子点共掺杂的聚合物由以下成分制得：
    Figure PCTCN2021115949-appb-100001
  2. 根据权利要求1所述石墨烯与量子点共掺杂的聚合物，其特征在于，所述半导体量子点选自ZnCdSeS/ZnS量子点或CsPbX 3钙钛矿量子点，
    所述CsPbX 3钙钛矿量子点，X选自Cl、Br或I。
  3. 根据权利要求1所述石墨烯与量子点共掺杂的聚合物，其特征在于，所述光敏聚合物选自聚甲基丙烯酸甲酯、聚丙烯酸甲酯、聚丙烯酸乙酯、聚氨基丙烯酸酯、聚羟丙基丙烯酸酯或聚氨酯丙烯酸酯；
    所述光引发剂选自苯基双(2,4,6-三甲基苯甲酰基)氧化膦、2-羟基-甲基苯基丙烷-1酮、1-羟基环己基苯基酮、安息香双甲醚、2-苯基苄-2-二甲基胺-1-(4-吗啉苄苯基)丁酮或2-异丙基硫杂蒽酮的一种或几种。
  4. 根据权利要求1-3任一项所述石墨烯与量子点共掺杂的聚合物的制备方法，其特征在于，包括如下步骤：
    (1)将光敏聚合物与光引发剂共混形成混合溶液；
    (2)将半导体量子点加入混合溶液中，进行搅拌，得到溶液A；
    (3)将石墨烯加入混合溶液A中，进行搅拌，得到溶液B；
    (4)用紫外光对溶液B进行紫外光固化。
  5. 根据权利要求4所述石墨烯与量子点共掺杂的聚合物的制备方法，其特征在于，所述(2)和(3)中，搅拌的方法为：先进行超声，然后再进行机械搅拌。
  6. 根据权利要求5所述石墨烯与量子点共掺杂的聚合物的制备方法，其特征在于，所述超声的时间为1-4h，所述机械搅拌的时间为2-5h。
  7. 根据权利要求4所述石墨烯与量子点共掺杂的聚合物的制备方法，其特征在于，所述紫外光的波长为200-365nm。
  8. 根据权利要求4所述石墨烯与量子点共掺杂的聚合物的制备方法，其特征在于，所述紫外光固化时间≥5秒。
  9. 根据权利要求4所述石墨烯与量子点共掺杂的聚合物的制备方法，其特征在于，所述步骤(1)-(4)在避光下进行。
  10. 根据权利要求1-3任一项所述石墨烯与量子点共掺杂的聚合物在随机激光器中的应用。
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