WO2022021893A1 - 一种基于saw-baw技术组合应用的滤波器组件 - Google Patents

一种基于saw-baw技术组合应用的滤波器组件 Download PDF

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WO2022021893A1
WO2022021893A1 PCT/CN2021/081166 CN2021081166W WO2022021893A1 WO 2022021893 A1 WO2022021893 A1 WO 2022021893A1 CN 2021081166 W CN2021081166 W CN 2021081166W WO 2022021893 A1 WO2022021893 A1 WO 2022021893A1
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acoustic wave
filter
saw
resonator
baw
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PCT/CN2021/081166
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French (fr)
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胡孝伟
代文亮
赵瑞洁
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上海芯波电子科技有限公司
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14544—Transducers of particular shape or position
    • H03H9/1455—Transducers of particular shape or position constituted of N parallel or series transducers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material

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  • the invention belongs to the technical field of filters, in particular to a filter assembly based on the combined application of SAW-BAW technology.
  • an important characteristic is the steepness of the transition band, the curve between the passband and stopband in the filter's bandpass characteristic. If its transition bandwidth between passband and stopband is too narrow, it will greatly increase the difficulty of filter design.
  • the design of the connection circuit between the resonators that make up the filter is important, but the characteristics of the resonance unit itself (quality factor or Q value) are also key factors. In order to meet the filter design requirements of these difficult frequency bands, the Q value of the resonant unit needs to be increased all the time.
  • SAW devices have been widely used in RF filters with interdigital transducers mounted on the surface of a piezoelectric substrate.
  • the resonance characteristics of the surface acoustic wave excited by IDT determine the characteristic frequency band of the RF filter
  • the sound energy density of the BAW filter is very high, and its structure can guide and limit the sound wave well, and the loss is very low.
  • the achievable Q-value of BAW is higher than that of any other type of filter in comparable volume, up to: 2500@2GHz. This results in excellent rejection and insertion loss performance even at tight passband edges.
  • the size of the BAW filter also shrinks with increasing frequency, making it ideal for very demanding 4G, 5G applications.
  • the BAW is less sensitive to temperature changes, while it has very low losses and very steep filter skirts.
  • the purpose of the present invention is to solve the problem that the existing technology is difficult to reduce the overall volume of the filter and improve the performance of the filter.
  • a filter assembly based on the combined application of SAW-BAW technology of the present invention includes a first acoustic wave filter and a second acoustic wave filter coupled to a common node.
  • the first acoustic wave filter includes a surface acoustic wave resonator and a series bulk acoustic wave resonator coupled between the surface acoustic wave resonator and a common node.
  • both the first acoustic wave filter and the second acoustic wave filter include a series-connected surface acoustic wave resonator and a series-connected bulk acoustic wave resonator.
  • the number of bulk acoustic wave resonators in the first acoustic wave filter is greater than twice the number of surface acoustic wave resonators.
  • the surface acoustic wave resonator includes at least five resonators.
  • the first acoustic wave filter may further include a parallel bulk acoustic wave resonator coupled to the common node, and the parallel bulk acoustic wave resonator is coupled to the surface acoustic wave resonator through the serial bulk acoustic wave resonator.
  • the second acoustic wave filter includes a second surface acoustic wave resonator and a second bulk acoustic wave resonator coupled between the second surface acoustic wave resonator and a common node.
  • At least two additional acoustic wave filters coupled to the common node are also included.
  • At least four additional acoustic wave filters coupled to the common node are also included.
  • At least six additional acoustic wave filters coupled to the common node are also included.
  • a filter assembly based on the combined application of SAW-BAW technology of the present invention includes a first acoustic wave filter and a second acoustic wave filter coupled to a common node.
  • the first acoustic wave filter includes a surface acoustic wave resonator and a series bulk acoustic wave resonator coupled between the surface acoustic wave resonator and a common node.
  • An extremely small size is achieved by integrating the latest bulk acoustic wave (BAW) and surface acoustic wave (SAW) filter technologies. This size advantage helps mobile phone manufacturers to produce ultra-thin mobile phones, and at the same time is conducive to the integration of advanced multimedia functions to meet the needs of users.
  • FIG. 1 is a schematic structural diagram of a filter component based on the combined application of the SAW-BAW technology according to the second embodiment.
  • a filter assembly based on the combined application of SAW-BAW technology includes a first acoustic wave filter and a second acoustic wave filter coupled to a common node.
  • the first acoustic wave filter includes a surface acoustic wave resonator and a series bulk acoustic wave resonator coupled between the surface acoustic wave resonator and a common node.
  • Each of the first acoustic wave filter and the second acoustic wave filter includes a series-connected surface acoustic wave resonator and a series-connected bulk acoustic wave resonator.
  • the number of bulk acoustic wave resonators in the first acoustic wave filter is greater than twice the number of surface acoustic wave resonators.
  • the surface acoustic wave resonator includes at least five resonators.
  • the first acoustic wave filter may further include a parallel bulk acoustic wave resonator coupled to the common node, the parallel bulk acoustic wave resonator being coupled with the surface acoustic wave resonator through the serial bulk acoustic wave resonator.
  • the second acoustic wave filter includes a second surface acoustic wave resonator and a second bulk acoustic wave resonator coupled between the second surface acoustic wave resonator and the common node.
  • a filter component based on the combined application of SAW-BAW technology in this embodiment includes a TX1 port, an RX1 port, a TX2 port and an RX2 port respectively connected to a COM port, the TX1 port, RX1 port, The TX2 port and the RX2 port are connected in parallel with the COM port through different filter branches, and the filter branches of the TX1 port, the RX1 port, the TX2 port and the RX2 port all include several SAW resonators and several BAW resonators.
  • the filter branch connected to the TX1 port and the COM port includes SAW resonator one 21 , SAW resonator two 23 and BAW resonator one 25 connected in series in sequence, and between the SAW resonator one 21 and SAW resonator two 23 A SAW resonator three 22 is connected in parallel, and a SAW resonator four 24 is connected in parallel between the SAW resonator two 23 and the BAW resonator one 25, and one end of the SAW resonator three 22 and the SAW resonator four 24 is grounded.
  • the filter branch connected to the RX1 port and the COM port includes the SAW resonator five 31, the SAW resonator six 33 and the BAW resonator two 36 connected in series, and the SAW resonator five 31 and the SAW resonator six 33 are connected in series.
  • a SAW resonator seven 32 is connected in parallel
  • a SAW resonator eight 34 is connected in parallel between the SAW resonator six 33 and the BAW resonator two 36, and one end of the SAW resonator seven 32 and the SAW resonator eight 34 is grounded.
  • the filter branch connected to the TX2 port and the COM port includes SAW resonator nine 41, SAW resonator ten 43 and BAW resonator three 46 connected in series in sequence, and SAW resonator nine 41 is connected in parallel between the TX2 port and the SAW resonator nine 41
  • the eleventh resonator 45, the SAW resonator twelve 42 is connected in parallel between the SAW resonator nine 41 and the SAW resonator ten 43
  • the SAW resonator is connected in parallel between the SAW resonator ten 43 and the BAW resonator three 46
  • the BAW resonator four 47 is connected in parallel between the BAW resonator three 46 and the COM port
  • the SAW resonator eleven 45, the SAW resonator twelve 42, the SAW resonator thirteen 44 and the BAW resonator Four 47 have one end grounded.
  • the filter branch connected to the RX2 port and the COM port includes the SAW resonator fourteen 51 , the SAW resonator fifteen 53 and the BAW resonator five 56 connected in series, and the connection between the RX2 port and the SAW resonator fourteen 51
  • the SAW resonator sixteen 55 is connected in parallel
  • the SAW resonator fourteen 51 and the SAW resonator fifteen 53 are connected in parallel with the SAW resonator seventeen 52
  • the SAW resonator fifteen 53 and the BAW resonator five 56 are connected in parallel with the SAW resonator
  • the resonator eighteen 54, the SAW resonator sixteen 55, the SAW resonator seventeen 52 and the SAW resonator eighteen 54 all have one end grounded.
  • the series SAW resonator in the acoustic wave filter can be coupled to the common node of the quadplexer through the series BAW resonator.
  • the series SAW resonator and the parallel SAW resonator in the acoustic wave filter can be coupled to the common node of the quadplexer through the series BAW resonator. All the SAW resonators of each acoustic wave filter are coupled to a common node through the series BAW resonators of the respective acoustic wave filter. This can reduce the load on the common node relative to an acoustic wave filter that includes only SAW resonators.
  • At least 70% of the resonators of the multiplexer and the acoustic wave filter may be SAW resonators, and the other resonators of the multiplexer and the acoustic wave filter may be realized by BAW technology.
  • SAW resonators By implementing an acoustic wave filter using most SAW resonators, such an acoustic wave filter can be less expensive than an acoustic wave filter implemented mostly or entirely by BAW resonators.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

本发明的一种基于SAW-BAW技术组合应用的滤波器组件，包括耦合到公共节点的第一声波滤波器和第二声波滤波器。第一声波滤波器包括表面声波谐振器和耦合在表面声波谐振器和公共节点之间的串联体声波谐振器。通过集成最新的体声波(BAW)和表面声波(SAW)滤波器技术，实现了极小的体积。这种体积优势有助于手机制造商生产出超薄的手机，同时有利于整合先进的多媒体功能来满足用户的需求。与传统LC滤波器及双工器、多工器产品进行组合来帮助解决运营商等部署的各种载波聚合配置，以扩大千兆位网络的覆盖范围，速度和容量，从而增强用户体验。

Description

一种基于SAW-BAW技术组合应用的滤波器组件 技术领域
本发明属于滤波器技术领域，具体来说是一种基于SAW-BAW技术组合应用的滤波器组件。
背景技术
在射频滤波器中，一个重要的特性是过渡带的陡峭程度，即在滤波器带通特性中处于通带和阻带之间的曲线。在通带和阻带之间的其过渡带宽如果过窄，会大大增加滤波器的设计难度。为了提高过渡带的陡度，组成滤波器的谐振器之间的连接电路设计是很重要的，但谐振单元本身的特性(质量因数或Q值)也是关键因素。为了满足这些高难度频段的滤波器设计要求，需要一直提高谐振单元的Q值。
SAW器件已广泛应用于射频滤波器，该滤波器具有叉指换能器，安装在压电基板的表面。由IDT激发的表面声波的共振特性决定了射频滤波器的特征频带
BAW滤波器的声能密度很高，其结构都能很好地导限声波，损耗非常低。在微波频率，BAW可实现的Q值、在可比体积下、比任何其它类型的滤波器都高，可达：2500@2GHz。这使得即使在通带边缘的吃紧处，它也有极好的抑制和插入损耗性能。BAW滤波器的尺寸还随频率升高而缩小，这使它非常适合要求非常苛刻的4G、5G应用。此外，即便在高宽带设计中，BAW对温度变化也不那么敏感，同时它还具有极低的损耗和非常陡峭的滤波器裙边。
但是现有的技术难以很好的降低滤波器整体的体积和提高滤波器的性能。
发明内容
1.发明要解决的技术问题
本发明的目的在于解决现有的技术难以很好的降低滤波器整体的体积和提高滤波器的性能的问题。
2.技术方案
为达到上述目的，本发明提供的技术方案为：
本发明的一种基于SAW-BAW技术组合应用的滤波器组件，包括耦合到公共节点的第一声波滤波器和第二声波滤波器。第一声波滤波器包括表面声波谐振器和耦合在表面声波谐振器和公共节点之间的串联体声波谐振器。
优选的，所述第一声波滤波器和第二声波滤波器均包括串联的表面声波谐振器和串联的体声波谐振器。
优选的，所述第一声波滤波器中体声波谐振器的数量大于表面声波谐振器数量的两倍。
优选的，所述表面声波谐振器包括至少五个谐振器。
优选的，所述第一声波滤波器还可以包括耦合到公共节点的并联体声波谐振器，并联体声波谐振器通过串联体声波谐振器与表面声波谐振器耦合。
优选的，所述第二声波滤波器包括第二表面声波谐振器和耦合在第二表面声波谐振器和公共节点之间的第二体声波谐振器。
优选的，还包括耦合到公共节点的至少两个附加声波滤波器。
优选的，还包括耦合到公共节点的至少四个附加声波滤波器。
优选的，还包括耦合到公共节点的至少六个附加声波滤波器。
3.有益效果
采用本发明提供的技术方案，与现有技术相比，具有如下有益效果：
本发明的一种基于SAW-BAW技术组合应用的滤波器组件，包括耦合到公共节点的第一声波滤波器和第二声波滤波器。第一声波滤波器包括表面声波谐振器和耦合在表面声波谐振器和公共节点之间的串联体声波谐振器。通过集成 最新的体声波(BAW)和表面声波(SAW)滤波器技术，实现了极小的体积。这种体积优势有助于手机制造商生产出超薄的手机，同时有利于整合先进的多媒体功能来满足用户的需求。与传统LC滤波器及双工器、多工器产品进行组合来帮助解决运营商等部署的各种载波聚合配置，以扩大千兆位网络的覆盖范围，速度和容量，从而增强用户体验。并且可以通过简化放大器模块中对载波聚合支持的设计，从而使终端设备等原始设备制造商受益，让设备厂商提高设计成本效率，降低尺寸，并帮助缩短产品设计周期。对于消费者而言，该方案的低插入损耗性能可以支持长电池寿命和出众的数据速率。
附图说明
图1为本实施例2的一种基于SAW-BAW技术组合应用的滤波器组件的结构示意图。
具体实施方式
为了便于理解本发明，下面将参照相关附图对本发明进行更全面的描述，附图中给出了本发明的若干实施例，但是，本发明可以以许多不同的形式来实现，并不限于本文所描述的实施例，相反地，提供这些实施例的目的是使对本发明的公开内容更加透彻全面。
需要说明的是，当元件被称为“固设于”另一个元件，它可以直接在另一个元件上或者也可以存在居中的元件；当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件或者可能同时存在居中元件；本文所使用的术语“垂直的”、“水平的”、“左”、“右”以及类似的表述只是为了说明的目的。
除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同；本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本发明；本文所使用的 术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。
实施例1
一种基于SAW-BAW技术组合应用的滤波器组件，包括耦合到公共节点的第一声波滤波器和第二声波滤波器。第一声波滤波器包括表面声波谐振器和耦合在表面声波谐振器和公共节点之间的串联体声波谐振器。
第一声波滤波器和第二声波滤波器均包括串联的表面声波谐振器和串联的体声波谐振器。
第一声波滤波器中体声波谐振器的数量大于表面声波谐振器数量的两倍。
表面声波谐振器包括至少五个谐振器。
第一声波滤波器还可以包括耦合到公共节点的并联体声波谐振器，并联体声波谐振器通过串联体声波谐振器与表面声波谐振器耦合。
第二声波滤波器包括第二表面声波谐振器和耦合在第二表面声波谐振器和公共节点之间的第二体声波谐振器。
还包括耦合到公共节点的两个附加声波滤波器。
通过集成最新的体声波(BAW)和表面声波(SAW)滤波器技术，实现了极小的体积。这种体积优势有助于手机制造商生产出超薄的手机，同时有利于整合先进的多媒体功能来满足用户的需求。与传统LC滤波器及双工器、多工器产品进行组合来帮助解决运营商等部署的各种载波聚合配置，以扩大千兆位网络的覆盖范围，速度和容量，从而增强用户体验。并且可以通过简化放大器模块中对载波聚合支持的设计，从而使终端设备等原始设备制造商受益，让设备厂商提高设计成本效率，降低尺寸，并帮助缩短产品设计周期。对于消费者而言，该方案的低插入损耗性能可以支持长电池寿命和出众的数据速率。
实施例2
参照附图1，本实施例的一种基于SAW-BAW技术组合应用的滤波器组件，包括分别与COM端口连接的TX1端口、RX1端口、TX2端口和RX2端口，所述TX1端口、RX1端口、TX2端口、RX2端口均通过不同的滤波器支路与COM端口并联，所述TX1端口、RX1端口、TX2端口、RX2端口的滤波器支路均包括若干个SAW谐振器和若干个BAW谐振器。
其中，TX1端口和COM端口连接的滤波器支路包括依次串联的SAW谐振器一21、SAW谐振器二23和BAW谐振器一25，所述SAW谐振器一21和SAW谐振器二23之间并联有SAW谐振器三22，所述SAW谐振器二23和BAW谐振器一25之间并联有SAW谐振器四24，所述SAW谐振器三22和SAW谐振器四24均有一端接地。
其中，RX1端口和COM端口连接的滤波器支路包括依次串联的SAW谐振器五31、SAW谐振器六33和BAW谐振器二36，所述SAW谐振器五31和SAW谐振器六33之间并联有SAW谐振器七32，所述SAW谐振器六33和BAW谐振器二36之间并联有SAW谐振器八34，所述SAW谐振器七32和SAW谐振器八34均有一端接地。
其中，TX2端口和COM端口连接的滤波器支路包括依次串联的SAW谐振器九41、SAW谐振器十43和BAW谐振器三46，所述TX2端口和SAW谐振器九41之间并联有SAW谐振器十一45，所述SAW谐振器九41和SAW谐振器十43之间并联有SAW谐振器十二42，所述SAW谐振器十43和BAW谐振器三46之间并联有SAW谐振器十三44，所述BAW谐振器三46和COM端口之间并联有BAW谐振器四47，所述SAW谐振器十一45、SAW谐振器十二42、SAW谐振器十三44和BAW谐振器四47均有一端接地。
其中，RX2端口和COM端口连接的滤波器支路包括依次串联的SAW谐振 器十四51、SAW谐振器十五53和BAW谐振器五56，所述RX2端口和SAW谐振器十四51之间并联有SAW谐振器十六55，所述SAW谐振器十四51和SAW谐振器十五53并联有SAW谐振器十七52，所述SAW谐振器十五53和BAW谐振器五56并联有SAW谐振器十八54，所述SAW谐振器十六55、SAW谐振器十七52和SAW谐振器十八54均有一端接地。
声波滤波器中的串联SAW谐振器可以通过串联BAW谐振器耦合到四工器的公共节点。声波滤波器中的串联SAW谐振器和并联SAW谐振器可以通过串联BAW谐振器耦合到四工器的公共节点上。每个声波滤波器的所有SAW谐振器通过各自声波滤波器的串联BAW谐振器耦合到共同节点。相对于只包括声表面波谐振器的声波滤波器，这可以减少公共节点上的负载。多工器和声波滤波器的至少70％的谐振器可以是SAW谐振器，多工器和声波滤波器的其他谐振器可以通过BAW技术实现。通过使用大多数SAW谐振器来实现声波滤波器，这样的声波滤波器可以比大部分或全部由BAW谐振器实现的声波滤波器便宜。
以上所述实施例仅表达了本发明的某种实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制；应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围；因此，本发明专利的保护范围应以所附权利要求为准。

Claims (9)

  1. 一种基于SAW-BAW技术组合应用的滤波器组件，其特征在于：包括耦合到公共节点的第一声波滤波器和第二声波滤波器。第一声波滤波器包括表面声波谐振器和耦合在表面声波谐振器和公共节点之间的串联体声波谐振器。
  2. 根据权利要求1所述的一种基于SAW-BAW技术组合应用的滤波器组件，其特征在于：所述第一声波滤波器和第二声波滤波器均包括串联的表面声波谐振器和串联的体声波谐振器。
  3. 根据权利要求2所述的一种基于SAW-BAW技术组合应用的滤波器组件，其特征在于：所述第一声波滤波器中体声波谐振器的数量大于表面声波谐振器数量的两倍。
  4. 根据权利要求2所述的一种基于SAW-BAW技术组合应用的滤波器组件，其特征在于：所述表面声波谐振器包括至少五个谐振器。
  5. 根据权利要求2所述的一种基于SAW-BAW技术组合应用的滤波器组件，其特征在于：所述第一声波滤波器还可以包括耦合到公共节点的并联体声波谐振器，并联体声波谐振器通过串联体声波谐振器与表面声波谐振器耦合。
  6. 根据权利要求2所述的一种基于SAW-BAW技术组合应用的滤波器组件，其特征在于：所述第二声波滤波器包括第二表面声波谐振器和耦合在第二表面声波谐振器和公共节点之间的第二体声波谐振器。
  7. 根据权利要求1-6任一项所述的一种基于SAW-BAW技术组合应用的滤波器组件，其特征在于：还包括耦合到公共节点的至少两个附加声波滤波器。
  8. 根据权利要求1-6任一项所述的一种基于SAW-BAW技术组合应用的滤波器组件，其特征在于：还包括耦合到公共节点的至少四个附加声波滤波器。
  9. 根据权利要求1-6任一项所述的一种基于SAW-BAW技术组合应用的滤波器组件，其特征在于：还包括耦合到公共节点的至少六个附加声波滤波器。
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