WO2022020975A1 - Bending-resistant transparent conductive composite film and manufacturing method therefor - Google Patents

Bending-resistant transparent conductive composite film and manufacturing method therefor Download PDF

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WO2022020975A1
WO2022020975A1 PCT/CN2020/000179 CN2020000179W WO2022020975A1 WO 2022020975 A1 WO2022020975 A1 WO 2022020975A1 CN 2020000179 W CN2020000179 W CN 2020000179W WO 2022020975 A1 WO2022020975 A1 WO 2022020975A1
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transparent conductive
film
bending
mound
polymer layer
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PCT/CN2020/000179
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French (fr)
Chinese (zh)
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张汉焱
沈奕
冯兆昌
郑丹旭
吕岳敏
欧建平
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汕头超声显示器技术有限公司
汕头超声显示器(二厂)有限公司
汕头超声显示器有限公司
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Publication of WO2022020975A1 publication Critical patent/WO2022020975A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables

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  • the invention relates to a transparent conductive composite film, in particular to a bending-resistant transparent conductive composite film and a manufacturing method thereof.
  • Transparent conductive films are generally used as transparent electrodes on touch displays (such as touch screens, displays).
  • touch displays such as touch screens, displays.
  • touch display can also be made flexible, and thus the transparent conductive film as its transparent electrode is required to have bending resistance.
  • the traditional transparent conductive films are mostly transparent conductive oxide films such as indium tin oxide (ITO) and zinc aluminum oxide (AZO).
  • ITO indium tin oxide
  • AZO zinc aluminum oxide
  • ITO indium tin oxide
  • ITO indium tin oxide
  • AZO zinc aluminum oxide
  • non-transparent conductive oxide films such as metal mesh and nano-silver wire film as a bending-resistant transparent conductive film, which generally has good bending resistance.
  • these non-transparent conductive oxide films The transparency, conductivity or uniformity of oxide films are generally poor, and when they are applied to touch displays, the performance of the touch displays is often degraded.
  • the technical problem to be solved by the present invention is to provide a bending-resistant transparent conductive composite film and a manufacturing method thereof.
  • the transparent conductive composite film has good bending resistance and can also maintain good transparency, conductivity and uniformity.
  • the bending-resistant transparent conductive composite film includes a transparent conductive film arranged on a flexible support film, the transparent conductive film is a transparent conductive oxide film plated on the flexible support film, and is characterized in that: it also includes a polymer layer; the The transparent conductive film includes a film base and a large number of mound-shaped protrusions evenly distributed on the film base; the polymer layer is arranged on the transparent conductive film, and the polymer layer includes a large number of polymer chains, and at least part of the polymer chains surround the The mound-shaped bulge forms the binding structure of the mound-shaped bulge.
  • the mound-shaped protrusions are evenly distributed on the film substrate, and the mound-shaped protrusions are surrounded by a large number of polymer chains to form a confinement structure of the mound-shaped protrusions; using this structure makes the transparent conductive composite film.
  • the confinement structure of the mound-shaped protrusions can play a supporting and tightening role, tightening the transparent conductive composite film, avoiding the rupture of the transparent conductive composite film, and effectively maintaining the conductivity of the transparent conductive composite film.
  • the flexible support film usually adopts glass sheet, plastic film, polyimide plastic film or colorless polyimide plastic film.
  • the glass sheet is usually a sheet with a thickness of less than 0.2mm.
  • the polyimide plastic film has good high temperature resistance (high temperature facilitates the film formation and crystallization of the transparent conductive film), and the colorless polyimide plastic film can ensure transparency.
  • the transparent conductive film is a thin film made of indium tin oxide (ITO), zinc aluminum oxide (AZO), indium gallium zinc oxide (IGZO) or other transparent conductive oxides.
  • the thickness of the transparent conductive film is 10-100 nm, and in a specific solution, the thickness of the transparent conductive film is 20-60 nm. The use of such a thickness of the transparent conductive film can reduce the internal stress of the film when it is subjected to bending under the condition of ensuring the conductive performance of the film.
  • the mound-shaped protrusions when the mound-shaped protrusions are coated, the mound-shaped protrusions are naturally generated on the surface of the transparent conductive film through the control of coating parameters.
  • the mound-shaped protrusions are the outwardly extending parts of the columnar crystals embedded in the film substrate.
  • a magnetron sputtering deposition process can be used to form the transparent conductive film, based on magnetron sputtering.
  • the film formation mechanism of the sputtered island crystal growth makes the transparent conductive film a polycrystalline structure composed of columnar crystals, and the consistency of the growth rate of each columnar crystal is reduced by increasing the sputtering power, so that the final growth rate is higher.
  • Some columnar crystals form hill-like protrusions on the surface of the transparent conductive film.
  • the mound-shaped protrusion is the outward extension of the columnar crystal embedded in the film matrix, that is to say, the mound-shaped protrusion has a root embedded in the film matrix, and the combination with the film matrix is tighter.
  • the force of the polymer chains can be effectively transferred into the film matrix, which makes the transparent conductive composite film more tough.
  • the mound-shaped protrusions are formed by roughening a process after the transparent conductive film is formed.
  • the mound-shaped protrusions are formed by etching the surface of the transparent conductive film with an etching solution after the transparent conductive film is fabricated. Since the crystallinity of different regions of the transparent conductive film (such as the center and edge of the crystal grains that constitute the polycrystalline film) is inconsistent, the etching speed is also inconsistent, and the position where the etching is slower (such as the center of the crystal grain) forms a mound-shaped protrusion. In other words, the mound-shaped protrusions formed by etching can also form a structure in which the roots are embedded in the film substrate.
  • the above-mentioned etching solution can be diluted aqua regia or the like.
  • the height of the mound-shaped protrusion is 20%-50% of the substrate of the transparent conductive film.
  • the height of the mound-shaped protrusion can be controlled by process adjustment (such as coating power, etching time).
  • the height of the mound-shaped protrusion is 20%-50% of the transparent conductive film substrate, so that the polymer chain can The protrusions form a restraining structure.
  • the polymer layer is a polymer coating, and the polymer layer is formed by polymerizing or cross-linking monomer molecules on the surface of the transparent conductive film.
  • the polymer coating is made of materials with good elasticity and toughness (such as polyethylene, polypropylene, polyamide, polyimide, etc.), and the polymer coating generally contains a large number of polymer chains;
  • the monomer molecules used to form the polymer chain can be placed on the surface of the transparent conductive film by means of evaporation, solution coating, etc., and then the polymerization reaction is initiated to form the polymer layer.
  • the permeability is good, and it easily penetrates into the gaps between the mound-shaped protrusions, and then polymerization can effectively form a polymer chain that binds the mound-shaped protrusions.
  • the polymer layer has a preset tensile stress.
  • the polymer layer maintains a certain tension state between the mound-shaped protrusions, so that when the composite film is subjected to bending, the polymer layer can adapt to the bending change of the composite film more quickly, so as to maintain the toughness of the composite film during the bending process. Avoid cracking of the transparent conductive film.
  • the polymer chain is formed by light-initiated polymerization or cross-linking reaction, and the light-initiated polymerization or cross-linking reaction can generally make the formed polymer chain in a tensioned state, and finally in the polymer layer.
  • a preset tensile stress is formed.
  • the polymer layer is a polyacrylic acid film formed by photo-initiated polymerization or cross-linking reaction. Polyacrylic films are capable of forming significant tensile stress.
  • the polymer chain length of the polymer layer is increased by optimizing the components and/or the polymerization process, so that in the polymer layer, at least part of the polymer chain length is increased.
  • the polymer chains together form a binding structure around two adjacent mound-like protrusions.
  • the polymer chains together form an "8"-shaped binding structure around two adjacent hill-shaped projections.
  • the above structure can bind the adjacent mound-shaped protrusions, improve the overall toughness of the composite film, and further increase its bending resistance.
  • the thickness of the polymer layer only needs to be made equal to the height of the mound-shaped protrusions, so that the toughness and bending resistance of the transparent conductive composite film can be improved.
  • the polymer layer can also be made thicker, such as a thick coating of 1 ⁇ m to 10 ⁇ m, the bottom of which is in contact with the transparent conductive film also has the above-mentioned polymer chains surrounding the hill-shaped protrusions to form a bond. structure.
  • a manufacturing method of a bending-resistant transparent conductive composite film characterized in that it comprises the following steps:
  • Step (1) disposing a transparent conductive oxide film on the flexible support film, and distributing a large number of mound-shaped protrusions on the surface of the transparent conductive oxide film;
  • step (2) a polymer layer is arranged on the transparent conductive oxide film, and at least part of the polymer chain of the polymer layer is formed around the mound-shaped protrusion to form a binding structure.
  • the mound-shaped protrusions are the outwardly extending parts of the columnar crystals embedded in the film substrate.
  • a magnetron sputtering deposition process can be used to form the transparent conductive Film, based on the film-forming mechanism of magnetron sputtering island crystal growth, the transparent conductive film is finally a polycrystalline structure composed of columnar crystals, and the consistency of the growth rate of each columnar crystal is reduced by increasing the sputtering power, so that the Finally, some columnar crystals with higher growth rate form hill-shaped protrusions on the surface of the transparent conductive film.
  • the mound-shaped protrusions are formed by etching the surface of the transparent conductive film with an etching solution after the transparent conductive film is fabricated.
  • the etching solution can be diluted aqua regia.
  • the method for forming the polymer chain surrounding the mound-shaped protrusion is to use monomer molecules on the surface of the transparent conductive film by photo-induced polymerization or cross-linking reaction to form a polymer chain.
  • the beneficial effect of the present invention is that: a large number of mound-shaped protrusions are arranged on the surface of the transparent conductive oxide thin film of the transparent conductive film, and then a polymer layer is arranged on the transparent conductive film, so that the polymer chains surround the mound-shaped protrusions When the transparent conductive composite film is bent, the polymer chains bound on the mound-shaped protrusions can tighten the transparent conductive film and prevent it from cracking. The conductivity of the transparent conductive film is effectively maintained. Therefore, this transparent conductive composite film not only has good bending resistance, but also its conductive layer is a transparent conductive oxide film, which has the good transparency, conductivity and uniformity of a general transparent conductive oxide film.
  • Example 1 is a cross-sectional view of a transparent conductive composite film in Example 1 of the present invention.
  • Example 2 is a schematic diagram of the transparent conductive film and the polymer layer of the transparent conductive composite film in Example 1 of the present invention.
  • the bending-resistant transparent conductive composite film shown in FIG. 1-2 includes a transparent conductive film 2 and a polymer layer 3 disposed on the flexible support film 1 , and the transparent conductive film 2 is a transparent conductive film plated on the flexible support film 1 .
  • the thickness of the transparent conductive film 2 was 10 nm.
  • the height of the hill-shaped protrusions 202 is 20% of the transparent conductive film substrate 201 .
  • the polymer layer 3 is a polymer coating.
  • step (1) a transparent conductive oxide film is arranged on the flexible support film 1, and a large number of mound-shaped protrusions 202 are distributed on the surface of the transparent conductive oxide film;
  • a polymer layer 3 is arranged on the transparent conductive oxide film, and part of the polymer chains 301 of the polymer layer 3 surrounds the mound-shaped protrusion 202 to form a monocyclic binding structure 302; part of the polymer chains 301 surrounds together Two adjacent mound-shaped protrusions 202 form an encircling confinement structure 303 ; part of the polymer chains 301 jointly surround the two adjacent mound-shaped protrusions 202 to form an “8”-shaped confinement structure 304 .
  • the mound-shaped protrusions 202 are the outwardly extending portions of the columnar crystals 203 embedded in the film substrate 201 , and the transparent conductive film 2 is formed by a magnetron sputtering deposition process. , based on the film-forming mechanism of the island crystal growth by magnetron sputtering, the transparent conductive film 2 is finally a polycrystalline structure composed of columnar crystals 203, and the consistency of the growth rate of each columnar crystal 203 is reduced by increasing the sputtering power , so that some columnar crystals 203 with a higher final growth rate form hill-shaped protrusions 202 on the surface of the transparent conductive film 2 .
  • the method for forming the polymer chains 301 surrounding the mound-shaped protrusions 202 is to use monomer molecules to form polymer chains on the surface of the transparent conductive film 2 by light-induced polymerization or cross-linking reaction 301.
  • the difference is that the mound-shaped protrusions are formed by etching the surface of the transparent conductive film with an etchant after the transparent conductive film is fabricated. Since the crystallinity of different regions of the transparent conductive film (such as the center and edge of the crystal grains that constitute the polycrystalline film) is inconsistent, the etching speed is also inconsistent, and the position where the etching is slower (such as the center of the crystal grain) forms a mound-shaped protrusion, which The hill-like protrusions formed by etching can also form a structure in which the roots are embedded in the film substrate.
  • the above-mentioned etching solution can be diluted aqua regia or the like.
  • the difference is that the thickness of the transparent conductive film is 100 nm.
  • the difference is that the height of the mound-shaped protrusion is 50% of the substrate of the transparent conductive film.

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Abstract

Disclosed are a bending-resistant transparent conductive composite film and a manufacturing method therefor. The bending-resistant transparent conductive composite film comprises a transparent conductive film arranged on a flexible support film and a polymer layer. The transparent conductive film is a transparent conductive oxide thin film plated on the flexible support film; the transparent conductive film comprises a thin film substrate and a large number of hill-shaped protrusions uniformly distributed on the thin film substrate; and the polymer layer is arranged on the transparent conductive film and comprises a large number of polymer chains, and at least some of the polymer chains surround the hill-shaped protrusions to form hill-shaped protrusion binding structures. The transparent conductive composite film has good bending resistance, and can maintain good transparency, conductivity and uniformity.

Description

耐弯曲的透明导电复合膜及其制造方法Bending-resistant transparent conductive composite film and manufacturing method thereof 技术领域technical field
本发明涉及透明导电复合膜,特别涉及一种耐弯曲的透明导电复合膜及其制造方法。The invention relates to a transparent conductive composite film, in particular to a bending-resistant transparent conductive composite film and a manufacturing method thereof.
背景技术Background technique
透明导电薄膜一般作为透明电极应用在触控显示器(如触摸屏、显示器)上。近年来,随着弯曲或柔性电子产品的发展,人们期待触控显示器也能做成柔性的,由此要求作为其透明电极的透明导电薄膜具有耐弯曲性。Transparent conductive films are generally used as transparent electrodes on touch displays (such as touch screens, displays). In recent years, with the development of bending or flexible electronic products, it is expected that the touch display can also be made flexible, and thus the transparent conductive film as its transparent electrode is required to have bending resistance.
传统上的透明导电薄膜多为氧化铟锡(ITO)、氧化锌铝(AZO)之类的透明导电氧化物薄膜,这类薄膜具有良好的透明度、导电性和均匀性,能够满足一般触控显示器的需求,然而,由于其为脆性的金属氧化物,其在受到弯曲作用时容易破裂而导致膜层功能的失效,目前很难应用在柔性的触控显示器中。The traditional transparent conductive films are mostly transparent conductive oxide films such as indium tin oxide (ITO) and zinc aluminum oxide (AZO). However, since it is a brittle metal oxide, it is easily broken when subjected to bending, resulting in the failure of the function of the film layer, and it is currently difficult to apply in flexible touch displays.
为此,有人提出采用金属网格(Metal Mesh)、纳米银线膜等非透明导电氧化物薄膜来作为耐弯曲的透明导电膜,其一般具有较好的耐弯曲性,然而,这些非透明导电氧化物薄膜的透明度、导电性或均匀性一般都较差,其应用在触控显示器上时,往往会导致触控显示器的性能降低。For this reason, some people propose to use non-transparent conductive oxide films such as metal mesh and nano-silver wire film as a bending-resistant transparent conductive film, which generally has good bending resistance. However, these non-transparent conductive oxide films The transparency, conductivity or uniformity of oxide films are generally poor, and when they are applied to touch displays, the performance of the touch displays is often degraded.
发明内容SUMMARY OF THE INVENTION
本发明所要解决的技术问题是提供一种耐弯曲的透明导电复合膜及其制造方法,这种透明导电复合膜具有良好的耐弯曲性,还能够保持良好的透明度、导电性和均匀性。The technical problem to be solved by the present invention is to provide a bending-resistant transparent conductive composite film and a manufacturing method thereof. The transparent conductive composite film has good bending resistance and can also maintain good transparency, conductivity and uniformity.
为了解决上述技术问题,采用的技术方案如下:In order to solve the above technical problems, the technical solutions adopted are as follows:
耐弯曲的透明导电复合膜,包括设置在柔性支撑膜上的透明导电膜,透明导电膜为镀制在柔性支撑膜上的透明导电氧化物薄膜,其特征在于:还包括高分子层;所述透明导电膜包括薄膜基体以及均匀分布在薄膜基体之上的大量丘状凸起;高分子层设置在透明导电膜之上,高分子层包括大量的高分子链,至少部分高分子链围绕所述丘状凸起形成丘状凸起的束缚结构。The bending-resistant transparent conductive composite film includes a transparent conductive film arranged on a flexible support film, the transparent conductive film is a transparent conductive oxide film plated on the flexible support film, and is characterized in that: it also includes a polymer layer; the The transparent conductive film includes a film base and a large number of mound-shaped protrusions evenly distributed on the film base; the polymer layer is arranged on the transparent conductive film, and the polymer layer includes a large number of polymer chains, and at least part of the polymer chains surround the The mound-shaped bulge forms the binding structure of the mound-shaped bulge.
上述透明导电复合膜中,在薄膜基体上均匀分布大量丘状凸起,并通过大量的高分子链将丘状凸起围绕形成丘状凸起的束缚结构;采用这种结构使得透明导电复合膜在受力弯曲时,丘状凸起的束缚结构能够起到支撑收紧的作用,将透明导电复合膜拉紧,避免透明导电复合膜出现破裂,有效保持透明导电复合膜的导电性。In the above-mentioned transparent conductive composite film, a large number of mound-shaped protrusions are evenly distributed on the film substrate, and the mound-shaped protrusions are surrounded by a large number of polymer chains to form a confinement structure of the mound-shaped protrusions; using this structure makes the transparent conductive composite film. When bending under force, the confinement structure of the mound-shaped protrusions can play a supporting and tightening role, tightening the transparent conductive composite film, avoiding the rupture of the transparent conductive composite film, and effectively maintaining the conductivity of the transparent conductive composite film.
柔性支撑膜通常采用玻璃薄板、塑料膜、聚酰亚胺塑料膜或无色聚酰亚胺塑料膜。玻璃薄板通常采用厚度小于0.2mm的薄板,聚酰亚胺塑料膜具有良好耐高温性(高温便于透明导电膜的成膜和结晶),无色聚酰亚胺塑料膜能够保证透明性。透明导电膜为氧化铟锡(ITO)、氧化锌铝(AZO)、氧化铟镓锌(IGZO)或其他透明导电氧化物制成的薄膜。透明导电膜的厚度为10~100nm,具体方案中,透明导电膜的厚度为20~60nm。采用这种厚度的透明导电膜,可以在保证薄膜导电性能的情况下,减少薄膜受到弯曲作用时其内部产生的应力。The flexible support film usually adopts glass sheet, plastic film, polyimide plastic film or colorless polyimide plastic film. The glass sheet is usually a sheet with a thickness of less than 0.2mm. The polyimide plastic film has good high temperature resistance (high temperature facilitates the film formation and crystallization of the transparent conductive film), and the colorless polyimide plastic film can ensure transparency. The transparent conductive film is a thin film made of indium tin oxide (ITO), zinc aluminum oxide (AZO), indium gallium zinc oxide (IGZO) or other transparent conductive oxides. The thickness of the transparent conductive film is 10-100 nm, and in a specific solution, the thickness of the transparent conductive film is 20-60 nm. The use of such a thickness of the transparent conductive film can reduce the internal stress of the film when it is subjected to bending under the condition of ensuring the conductive performance of the film.
优选方案中,所述丘状凸起在镀膜时,通过镀膜参数的控制,使丘状凸起在透明导电膜表面自然生成。In a preferred solution, when the mound-shaped protrusions are coated, the mound-shaped protrusions are naturally generated on the surface of the transparent conductive film through the control of coating parameters.
进一步的优选方案中,所述丘状凸起为夹埋于薄膜基体之内的柱状晶的向外延伸部分,具体可采用磁控溅射沉积工艺来形成所述透明导电膜,基于磁控溅射岛状晶生长的成膜机制,使得透明导电膜最终为由柱状晶构成的多晶结构,且通过加大溅射功率来降低各柱状晶生长速度的一致性,使得最终生长速度较高的部分柱状晶在透明导电膜表面形成丘状凸起。丘状凸起为夹埋于薄膜基体之内的柱状晶的向外延伸,也就是说,丘状凸起具有夹埋在薄膜基体之内的根部,其与薄膜基体间的结合更紧密,当丘状凸起为高分子链所围绕束缚时,高分子链的作用力得以有效传递到了薄膜基体之内,使得这种透明导电复合膜更加坚韧。In a further preferred solution, the mound-shaped protrusions are the outwardly extending parts of the columnar crystals embedded in the film substrate. Specifically, a magnetron sputtering deposition process can be used to form the transparent conductive film, based on magnetron sputtering. The film formation mechanism of the sputtered island crystal growth makes the transparent conductive film a polycrystalline structure composed of columnar crystals, and the consistency of the growth rate of each columnar crystal is reduced by increasing the sputtering power, so that the final growth rate is higher. Some columnar crystals form hill-like protrusions on the surface of the transparent conductive film. The mound-shaped protrusion is the outward extension of the columnar crystal embedded in the film matrix, that is to say, the mound-shaped protrusion has a root embedded in the film matrix, and the combination with the film matrix is tighter. When the mound-shaped protrusions are bound by the polymer chains, the force of the polymer chains can be effectively transferred into the film matrix, which makes the transparent conductive composite film more tough.
另一优选方案中,所述丘状凸起在透明导电膜成膜之后,采用工艺粗化而成。In another preferred solution, the mound-shaped protrusions are formed by roughening a process after the transparent conductive film is formed.
进一步的优选方案中,所述丘状凸起在透明导电膜制作完成之后,采用蚀刻液对透明导电膜的表面进行蚀刻而成。由于透明导电膜不同区域(如构成多晶 薄膜的晶粒的中心与边缘)的结晶度不一致,其蚀刻速度也不一致,蚀刻较慢的位置(如晶粒中心)形成了丘状凸起,一般来说,这种通过蚀刻形成的丘状凸起也可形成根部被夹埋在薄膜基体之内的结构。上述蚀刻液可以采用稀释的小王水等。In a further preferred solution, the mound-shaped protrusions are formed by etching the surface of the transparent conductive film with an etching solution after the transparent conductive film is fabricated. Since the crystallinity of different regions of the transparent conductive film (such as the center and edge of the crystal grains that constitute the polycrystalline film) is inconsistent, the etching speed is also inconsistent, and the position where the etching is slower (such as the center of the crystal grain) forms a mound-shaped protrusion. In other words, the mound-shaped protrusions formed by etching can also form a structure in which the roots are embedded in the film substrate. The above-mentioned etching solution can be diluted aqua regia or the like.
具体方案中,丘状凸起的高度为透明导电膜薄膜基体的20%-50%。丘状凸起的高度可以通过工艺的调整(如镀膜功率、蚀刻时间)进行控制,丘状凸起的高度为透明导电膜薄膜基体的20%-50%,使高分子链能够有效围绕丘状凸起形成束缚结构。In a specific solution, the height of the mound-shaped protrusion is 20%-50% of the substrate of the transparent conductive film. The height of the mound-shaped protrusion can be controlled by process adjustment (such as coating power, etching time). The height of the mound-shaped protrusion is 20%-50% of the transparent conductive film substrate, so that the polymer chain can The protrusions form a restraining structure.
优选方案中,所述高分子层为聚合物涂层,高分子层由单体分子在透明导电膜的表面聚合或交联而成。首先,聚合物涂层采用弹性、韧性较好的材料(如聚乙烯、聚丙烯、聚酰胺、聚酰亚胺等)制成,聚合物涂层一般含有大量的高分子链;其次,在形成高分子层时,可以先通过蒸镀、溶液涂布等方式,将用于形成高分子链的单体分子设置在透明导电膜的表面,再引发其聚合反应形成高分子层,由于单体分子的渗透性好,其容易渗透到各丘状凸起间的缝隙中,再进行聚合可有效形成围绕束缚丘状凸起的高分子链。In a preferred solution, the polymer layer is a polymer coating, and the polymer layer is formed by polymerizing or cross-linking monomer molecules on the surface of the transparent conductive film. First, the polymer coating is made of materials with good elasticity and toughness (such as polyethylene, polypropylene, polyamide, polyimide, etc.), and the polymer coating generally contains a large number of polymer chains; When the polymer layer is used, the monomer molecules used to form the polymer chain can be placed on the surface of the transparent conductive film by means of evaporation, solution coating, etc., and then the polymerization reaction is initiated to form the polymer layer. The permeability is good, and it easily penetrates into the gaps between the mound-shaped protrusions, and then polymerization can effectively form a polymer chain that binds the mound-shaped protrusions.
进一步的优选方案中,所述高分子层具有预设的拉应力。高分子层在丘状凸起之间保持一定的拉紧状态,使得复合膜受到弯曲作用时,高分子层能够更快速地适应复合膜的弯曲变化,以保持复合膜在弯曲过程中的韧性,避免透明导电膜出现破裂。In a further preferred solution, the polymer layer has a preset tensile stress. The polymer layer maintains a certain tension state between the mound-shaped protrusions, so that when the composite film is subjected to bending, the polymer layer can adapt to the bending change of the composite film more quickly, so as to maintain the toughness of the composite film during the bending process. Avoid cracking of the transparent conductive film.
更进一步的优选方案中,所述高分子链由光引发的聚合或交联反应形成,光引发的聚合或交联反应一般可使所形成的高分子链处于拉紧状态,最终在高分子层中形成预设的拉应力。具体方案中,所述高分子层为由光引发聚合或交联反应形成的聚丙烯酸膜。聚丙烯酸膜能够形成明显的拉应力。In a further preferred solution, the polymer chain is formed by light-initiated polymerization or cross-linking reaction, and the light-initiated polymerization or cross-linking reaction can generally make the formed polymer chain in a tensioned state, and finally in the polymer layer. A preset tensile stress is formed. In a specific solution, the polymer layer is a polyacrylic acid film formed by photo-initiated polymerization or cross-linking reaction. Polyacrylic films are capable of forming significant tensile stress.
再更进一步的优选方案中,在所述高分子层的形成过程中,通过组分和/或聚合工艺的优化来加大高分子层的高分子链长度,使得在高分子层中,至少部分高分子链共同围绕两个相邻丘状凸起形成束缚结构。优选的,在高分子链共同围绕两个相邻丘状凸起形成束缚结构时,高分子链共同围绕两个相邻丘状凸 起形成“8”字形束缚结构。上述结构可将相邻的丘状凸起捆绑起来,提高复合膜的整体韧性,进一步增加其耐弯曲性。高分子层的厚度仅需制作为与丘状凸起的高度相当,即可提高透明导电复合膜的韧性和抗弯曲性。为了更容易制作,也可将高分子层做得更厚,如做成1μm~10μm的厚涂层,其与透明导电膜相接触的底部也具有上述高分子链围绕丘状凸起形成束缚的结构。In a further preferred solution, in the formation process of the polymer layer, the polymer chain length of the polymer layer is increased by optimizing the components and/or the polymerization process, so that in the polymer layer, at least part of the polymer chain length is increased. The polymer chains together form a binding structure around two adjacent mound-like protrusions. Preferably, when the polymer chains together form a binding structure around two adjacent hill-shaped protrusions, the polymer chains together form an "8"-shaped binding structure around two adjacent hill-shaped projections. The above structure can bind the adjacent mound-shaped protrusions, improve the overall toughness of the composite film, and further increase its bending resistance. The thickness of the polymer layer only needs to be made equal to the height of the mound-shaped protrusions, so that the toughness and bending resistance of the transparent conductive composite film can be improved. In order to make it easier to manufacture, the polymer layer can also be made thicker, such as a thick coating of 1 μm to 10 μm, the bottom of which is in contact with the transparent conductive film also has the above-mentioned polymer chains surrounding the hill-shaped protrusions to form a bond. structure.
一种耐弯曲的透明导电复合膜的制造方法,其特征在于包括以下步骤:A manufacturing method of a bending-resistant transparent conductive composite film, characterized in that it comprises the following steps:
步骤(1)、在柔性支撑膜上设置透明导电氧化物薄膜,并使透明导电氧化物薄膜的表面分布大量的丘状凸起;Step (1), disposing a transparent conductive oxide film on the flexible support film, and distributing a large number of mound-shaped protrusions on the surface of the transparent conductive oxide film;
步骤(2)、在透明导电氧化物薄膜上设置高分子层,并使高分子层的至少部分高分子链围绕丘状凸起形成束缚结构。In step (2), a polymer layer is arranged on the transparent conductive oxide film, and at least part of the polymer chain of the polymer layer is formed around the mound-shaped protrusion to form a binding structure.
优选方案中,在上述步骤(1)中,所述丘状凸起为夹埋于薄膜基体之内的柱状晶的向外延伸部分,具体可采用磁控溅射沉积工艺来形成所述透明导电膜,基于磁控溅射岛状晶生长的成膜机制,使得透明导电膜最终为由柱状晶构成的多晶结构,且通过加大溅射功率来降低各柱状晶生长速度的一致性,使得最终生长速度较高的部分柱状晶在透明导电膜表面形成丘状凸起。In a preferred solution, in the above step (1), the mound-shaped protrusions are the outwardly extending parts of the columnar crystals embedded in the film substrate. Specifically, a magnetron sputtering deposition process can be used to form the transparent conductive Film, based on the film-forming mechanism of magnetron sputtering island crystal growth, the transparent conductive film is finally a polycrystalline structure composed of columnar crystals, and the consistency of the growth rate of each columnar crystal is reduced by increasing the sputtering power, so that the Finally, some columnar crystals with higher growth rate form hill-shaped protrusions on the surface of the transparent conductive film.
优选方案中,在上述步骤(1)中,所述丘状凸起在透明导电膜制作完成之后,采用蚀刻液对透明导电膜的表面进行蚀刻而成。蚀刻液可以采用稀释的小王水。In a preferred solution, in the above step (1), the mound-shaped protrusions are formed by etching the surface of the transparent conductive film with an etching solution after the transparent conductive film is fabricated. The etching solution can be diluted aqua regia.
优选方案中,在上述步骤(2)中,形成所述围绕丘状凸起的高分子链的方法,是采用单体分子在透明导电膜的表面由光引发的聚合或交联反应形成高分子链。In a preferred solution, in the above step (2), the method for forming the polymer chain surrounding the mound-shaped protrusion is to use monomer molecules on the surface of the transparent conductive film by photo-induced polymerization or cross-linking reaction to form a polymer chain.
本发明的有益效果在于:通过在透明导电膜的透明导电氧化物薄膜表面设置大量的丘状凸起,再在透明导电膜之上设置高分子层,使其高分子链围绕所述丘状凸起形成束缚结构,由此形成透明导电的复合膜;这种透明导电复合膜在受到弯曲作用时,束缚在丘状凸起上的高分子链可以将透明导电膜拉紧,避免其出现破裂,有效地保持了透明导电膜的导电性。由此,这种透明导电的复合膜不仅具有良好的抗弯曲性,且其导电层为透明导电氧化物薄膜,具有一般 透明导电氧化物薄膜的良好透明度、导电性和均匀性。The beneficial effect of the present invention is that: a large number of mound-shaped protrusions are arranged on the surface of the transparent conductive oxide thin film of the transparent conductive film, and then a polymer layer is arranged on the transparent conductive film, so that the polymer chains surround the mound-shaped protrusions When the transparent conductive composite film is bent, the polymer chains bound on the mound-shaped protrusions can tighten the transparent conductive film and prevent it from cracking. The conductivity of the transparent conductive film is effectively maintained. Therefore, this transparent conductive composite film not only has good bending resistance, but also its conductive layer is a transparent conductive oxide film, which has the good transparency, conductivity and uniformity of a general transparent conductive oxide film.
附图说明Description of drawings
图1为本发明实施例1中透明导电复合膜的剖面视图;1 is a cross-sectional view of a transparent conductive composite film in Example 1 of the present invention;
图2为本发明实施例1中透明导电复合膜的透明导电膜和高分子层示意图。2 is a schematic diagram of the transparent conductive film and the polymer layer of the transparent conductive composite film in Example 1 of the present invention.
具体实施方式detailed description
下面结合附图和具体实施例,对本发明做进一步描述:Below in conjunction with accompanying drawing and specific embodiment, the present invention is further described:
实施例1Example 1
如图1-2所示的耐弯曲的透明导电复合膜,包括设置在柔性支撑膜1上的透明导电膜2和高分子层3,透明导电膜2为镀制在柔性支撑膜1上的透明导电氧化物薄膜;透明导电膜2包括薄膜基体201以及均匀分布在薄膜基体201之上的大量丘状凸起202;高分子层3设置在透明导电膜2之上,高分子层3包括大量的高分子链301,部分高分子链301围绕所述丘状凸起202形成丘状凸起202的束缚结构。The bending-resistant transparent conductive composite film shown in FIG. 1-2 includes a transparent conductive film 2 and a polymer layer 3 disposed on the flexible support film 1 , and the transparent conductive film 2 is a transparent conductive film plated on the flexible support film 1 . Conductive oxide film; the transparent conductive film 2 includes a film base 201 and a large number of mound-shaped protrusions 202 evenly distributed on the film base 201; the polymer layer 3 is arranged on the transparent conductive film 2, and the polymer layer 3 includes a large number of The polymer chains 301 , and part of the polymer chains 301 surround the mound-shaped protrusions 202 to form a binding structure of the mound-shaped protrusions 202 .
透明导电膜2的厚度为10nm。丘状凸起202的高度为透明导电膜薄膜基体201的20%。高分子层3为聚合物涂层。The thickness of the transparent conductive film 2 was 10 nm. The height of the hill-shaped protrusions 202 is 20% of the transparent conductive film substrate 201 . The polymer layer 3 is a polymer coating.
这种耐弯曲的透明导电复合膜的具体制造方法如下:The specific manufacturing method of this bending-resistant transparent conductive composite film is as follows:
步骤(1)、在柔性支撑膜1上设置透明导电氧化物薄膜,并使透明导电氧化物薄膜的表面分布大量的丘状凸起202;In step (1), a transparent conductive oxide film is arranged on the flexible support film 1, and a large number of mound-shaped protrusions 202 are distributed on the surface of the transparent conductive oxide film;
步骤(2)、在透明导电氧化物薄膜上设置高分子层3,并使高分子层3的部分高分子链301围绕丘状凸起202形成单环束缚结构302;部分高分子链301共同围绕两个相邻丘状凸起202形成环绕束缚结构303;部分高分子链301共同围绕两个相邻丘状凸起202形成“8”字形束缚结构304。In step (2), a polymer layer 3 is arranged on the transparent conductive oxide film, and part of the polymer chains 301 of the polymer layer 3 surrounds the mound-shaped protrusion 202 to form a monocyclic binding structure 302; part of the polymer chains 301 surrounds together Two adjacent mound-shaped protrusions 202 form an encircling confinement structure 303 ; part of the polymer chains 301 jointly surround the two adjacent mound-shaped protrusions 202 to form an “8”-shaped confinement structure 304 .
在上述步骤(1)中,所述丘状凸起202为夹埋于薄膜基体201之内的柱状晶203的向外延伸部分,具体采用磁控溅射沉积工艺来形成所述透明导电膜2,基于磁控溅射岛状晶生长的成膜机制,使得透明导电膜2最终为由柱状晶203构成的多晶结构,且通过加大溅射功率来降低各柱状晶203生长速度的一致性, 使得最终生长速度较高的部分柱状晶203在透明导电膜2表面形成丘状凸起202。In the above step (1), the mound-shaped protrusions 202 are the outwardly extending portions of the columnar crystals 203 embedded in the film substrate 201 , and the transparent conductive film 2 is formed by a magnetron sputtering deposition process. , based on the film-forming mechanism of the island crystal growth by magnetron sputtering, the transparent conductive film 2 is finally a polycrystalline structure composed of columnar crystals 203, and the consistency of the growth rate of each columnar crystal 203 is reduced by increasing the sputtering power , so that some columnar crystals 203 with a higher final growth rate form hill-shaped protrusions 202 on the surface of the transparent conductive film 2 .
在上述步骤(2)中,形成所述围绕丘状凸起202的高分子链301的方法,是采用单体分子在透明导电膜2的表面由光引发的聚合或交联反应形成高分子链301。In the above step (2), the method for forming the polymer chains 301 surrounding the mound-shaped protrusions 202 is to use monomer molecules to form polymer chains on the surface of the transparent conductive film 2 by light-induced polymerization or cross-linking reaction 301.
实施例2Example 2
本实施例在其他部分均与实施例1相同的情况下,其区别在于:所述丘状凸起在透明导电膜制作完成之后,采用蚀刻液对透明导电膜的表面进行蚀刻而成。由于透明导电膜不同区域(如构成多晶薄膜的晶粒的中心与边缘)的结晶度不一致,其蚀刻速度也不一致,蚀刻较慢的位置(如晶粒中心)形成了丘状凸起,这种通过蚀刻形成的丘状凸起也可形成根部被夹埋在薄膜基体之内的结构。上述蚀刻液可以采用稀释的小王水等。In the case where other parts of this embodiment are the same as those of Embodiment 1, the difference is that the mound-shaped protrusions are formed by etching the surface of the transparent conductive film with an etchant after the transparent conductive film is fabricated. Since the crystallinity of different regions of the transparent conductive film (such as the center and edge of the crystal grains that constitute the polycrystalline film) is inconsistent, the etching speed is also inconsistent, and the position where the etching is slower (such as the center of the crystal grain) forms a mound-shaped protrusion, which The hill-like protrusions formed by etching can also form a structure in which the roots are embedded in the film substrate. The above-mentioned etching solution can be diluted aqua regia or the like.
实施例3Example 3
本实施例在其他部分均与实施例1相同的情况下,其区别在于:透明导电膜的厚度为100nm。When other parts of this embodiment are the same as those of Embodiment 1, the difference is that the thickness of the transparent conductive film is 100 nm.
实施例4Example 4
本实施例在其他部分均与实施例1相同的情况下,其区别在于:丘状凸起的高度为透明导电膜薄膜基体的50%。When other parts of this embodiment are the same as those of Embodiment 1, the difference is that the height of the mound-shaped protrusion is 50% of the substrate of the transparent conductive film.

Claims (10)

  1. 耐弯曲的透明导电复合膜,包括设置在柔性支撑膜上的透明导电膜,透明导电膜为镀制在柔性支撑膜上的透明导电氧化物薄膜,其特征在于:还包括高分子层;所述透明导电膜包括薄膜基体以及均匀分布在薄膜基体之上的大量丘状凸起;高分子层设置在透明导电膜之上,高分子层包括大量的高分子链,至少部分高分子链围绕所述丘状凸起形成丘状凸起的束缚结构。The bending-resistant transparent conductive composite film includes a transparent conductive film arranged on a flexible support film, the transparent conductive film is a transparent conductive oxide film plated on the flexible support film, and is characterized in that: it also includes a polymer layer; the The transparent conductive film includes a film base and a large number of mound-shaped protrusions evenly distributed on the film base; the polymer layer is arranged on the transparent conductive film, and the polymer layer includes a large number of polymer chains, and at least part of the polymer chains surround the The mound-shaped bulge forms the binding structure of the mound-shaped bulge.
  2. 如权利要求1所述的耐弯曲的透明导电复合膜,其特征在于:所述丘状凸起在镀膜时,通过镀膜参数的控制,使丘状凸起在透明导电膜表面自然生成。The bending-resistant transparent conductive composite film according to claim 1, wherein the mound-shaped protrusions are naturally generated on the surface of the transparent conductive film by controlling coating parameters during coating.
  3. 如权利要求2所述的耐弯曲的透明导电复合膜,其特征在于:所述丘状凸起为夹埋于薄膜基体之内的柱状晶的向外延伸部分,具体可采用磁控溅射沉积工艺来形成所述透明导电膜,基于磁控溅射岛状晶生长的成膜机制,使得透明导电膜最终为由柱状晶构成的多晶结构,且通过加大溅射功率来降低各柱状晶生长速度的一致性,使得最终生长速度较高的部分柱状晶在透明导电膜表面形成丘状凸起。The bending-resistant transparent conductive composite film according to claim 2, wherein the mound-shaped protrusions are the outwardly extending parts of the columnar crystals embedded in the film matrix, which can be deposited by magnetron sputtering. process to form the transparent conductive film, based on the film-forming mechanism of the magnetron sputtering island crystal growth, so that the transparent conductive film is finally a polycrystalline structure composed of columnar crystals, and by increasing the sputtering power, the columnar crystals are reduced. The consistency of the growth rate makes some columnar crystals with a higher final growth rate form hill-shaped protrusions on the surface of the transparent conductive film.
  4. 如权利要求1所述的耐弯曲的透明导电复合膜,其特征在于:所述丘状凸起在透明导电膜成膜之后,采用工艺粗化而成。The bending-resistant transparent conductive composite film according to claim 1, wherein the mound-shaped protrusions are formed by roughening a process after the transparent conductive film is formed.
  5. 如权利要求4所述的耐弯曲的透明导电复合膜,其特征在于:所述丘状凸起在透明导电膜制作完成之后,采用蚀刻液对透明导电膜的表面进行蚀刻而成。The bending-resistant transparent conductive composite film according to claim 4, wherein the mound-shaped protrusions are formed by etching the surface of the transparent conductive film with an etching solution after the transparent conductive film is fabricated.
  6. 如权利要求1所述的耐弯曲的透明导电复合膜,其特征在于:所述高分子层为聚合物涂层,高分子层由单体分子在透明导电膜的表面聚合或交联而成。The bending-resistant transparent conductive composite film according to claim 1, wherein the polymer layer is a polymer coating, and the polymer layer is formed by polymerizing or cross-linking monomer molecules on the surface of the transparent conductive film.
  7. 如权利要求6所述的耐弯曲的透明导电复合膜,其特征在于:所述高分子层具有预设的拉应力。The bending-resistant transparent conductive composite film of claim 6, wherein the polymer layer has a predetermined tensile stress.
  8. 如权利要求7所述的耐弯曲的透明导电复合膜,其特征在于:所述高分子链由光引发的聚合或交联反应形成,光引发的聚合或交联反应一般可使所形成的 高分子链处于拉紧状态,最终在高分子层中形成预设的拉应力。The bending-resistant transparent conductive composite film according to claim 7, wherein the polymer chain is formed by light-induced polymerization or cross-linking reaction, and the light-induced polymerization or cross-linking reaction generally can make the formed high polymer chain The molecular chain is in a state of tension, and finally a preset tensile stress is formed in the polymer layer.
  9. 如权利要求8所述的耐弯曲的透明导电复合膜,其特征在于:在所述高分子层的形成过程中,通过组分和/或聚合工艺的优化来加大高分子层的高分子链长度,使得在高分子层中,至少部分高分子链共同围绕两个相邻丘状凸起形成束缚结构。The bending-resistant transparent conductive composite film according to claim 8, characterized in that: during the formation of the polymer layer, the polymer chains of the polymer layer are enlarged by optimizing the components and/or the polymerization process. The length is such that in the polymer layer, at least part of the polymer chains together form a binding structure around two adjacent hill-shaped protrusions.
  10. 耐弯曲的透明导电复合膜的制造方法,其特征在于包括以下步骤:The manufacturing method of a bending-resistant transparent conductive composite film is characterized by comprising the following steps:
    步骤(1)、在柔性支撑膜上设置透明导电氧化物薄膜,并使透明导电氧化物薄膜的表面分布大量的丘状凸起;Step (1), disposing a transparent conductive oxide film on the flexible support film, and distributing a large number of mound-shaped protrusions on the surface of the transparent conductive oxide film;
    步骤(2)、在透明导电氧化物薄膜上设置高分子层,并使高分子层的至少部分高分子链围绕丘状凸起形成束缚结构。In step (2), a polymer layer is arranged on the transparent conductive oxide film, and at least part of the polymer chain of the polymer layer is formed around the mound-shaped protrusion to form a binding structure.
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