WO2022010234A1 - Procédé de liaison d'un substrat de pilier de cuivre à l'aide d'un masque - Google Patents

Procédé de liaison d'un substrat de pilier de cuivre à l'aide d'un masque Download PDF

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Publication number
WO2022010234A1
WO2022010234A1 PCT/KR2021/008599 KR2021008599W WO2022010234A1 WO 2022010234 A1 WO2022010234 A1 WO 2022010234A1 KR 2021008599 W KR2021008599 W KR 2021008599W WO 2022010234 A1 WO2022010234 A1 WO 2022010234A1
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WO
WIPO (PCT)
Prior art keywords
mask
inner diameter
substrate
copper
bonding
Prior art date
Application number
PCT/KR2021/008599
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English (en)
Korean (ko)
Inventor
고윤성
안근식
Original Assignee
주식회사 프로텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 프로텍 filed Critical 주식회사 프로텍
Publication of WO2022010234A1 publication Critical patent/WO2022010234A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/11001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/11003—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the bump preform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/11001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/11005—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for aligning the bump connector, e.g. marks, spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L2224/742—Apparatus for manufacturing bump connectors

Definitions

  • the present invention relates to a method for bonding a copper filler substrate using a mask, and more particularly, to a method for bonding a copper filler substrate using a mask for effectively arranging a cylindrical copper pillar on a substrate and bonding with high precision.
  • conductive balls such as solder balls are often used for electrical connection.
  • electrodes can be arranged at a narrower interval compared to a case where solder balls are used, so that it is possible to realize miniaturization and high integration of a semiconductor chip or a semiconductor package.
  • copper pillars are formed in a cylindrical shape, and thus, in order to precisely arrange and bond such a copper pillar on an electrode pad of a substrate, a process different from the conventional solder ball mounting method is required.
  • the present invention has been devised to solve the above-mentioned difficulties, and it is an object of the present invention to provide a method for bonding a copper filler substrate using a mask capable of bonding by placing a small-sized copper filler in an accurate position on a substrate quickly and accurately without omission. do.
  • the copper filler substrate bonding method using a mask of the present invention is a copper filler substrate bonding method using a mask for bonding the copper pillars formed in a cylindrical shape to an electrode pad of a substrate, (a) providing the substrate on which a solder paste is printed on an electrode pad; (b) a flat mask body, and a plurality of mounting holes formed to pass through the upper and lower sides of the mask body, wherein the mounting holes have an upper inner diameter portion formed to pass through the upper surface of the mask body and the mask body providing a mask formed to pass through the lower surface and having a lower inner diameter portion having an inner diameter smaller than that of the upper inner diameter portion and horizontally disposing; (c) disposing the substrate under the mask; (d) moving the copper pillars with respect to the upper surface of the mask to mount the copper pillars on the lower inner diameter of each mounting hole of the mask, thereby contacting the copper pillars with the solder paste printed on the substrate; (e) after completing step (d), lifting
  • the copper filler substrate bonding method using the mask of the present invention has the effect of quickly and effectively placing the copper filler on the substrate and bonding the copper filler without omission of the copper filler.
  • the method of bonding a copper filler substrate using a mask of the present invention has an effect of effectively performing a process of mounting a copper filler having a very small size on a substrate.
  • FIG. 2 is an enlarged cross-sectional view of a part of the mask of the copper pillar mounting apparatus shown in FIG. 1 .
  • 3 and 4 are diagrams for explaining a process of carrying out an example of a method for bonding a copper filler substrate using a mask according to the present invention using the copper filler mounting apparatus shown in FIG. 1 .
  • 5 to 8 are partially enlarged cross-sectional views illustrating another embodiment of the mask shown in FIG. 2 .
  • FIG. 9 is a view for explaining another embodiment of a method for bonding a copper filler substrate using a mask according to the present invention.
  • a copper filler mounting apparatus for performing the copper filler substrate bonding method using a mask includes a mask 200 , a substrate support module 500 , and a mounting module 300 .
  • the mask 200 is formed in the form of a thin metal plate. Referring to FIG. 2 , a plurality of mounting holes 210 are formed in the mask body 201 in the form of a metal flat plate to penetrate the upper and lower portions of the mask body 201 .
  • the mask 200 is used to prepare a cylindrical copper pillar (P) to be mounted on the substrate 100 at a predetermined position to prepare it for bonding to the substrate 100 .
  • a mounting hole 210 is formed in the mask body 201 at a position corresponding to a position at which the copper pillar P is to be mounted on the substrate 100 .
  • the depth of the mounting hole 210 is formed to be substantially similar to the height of the copper pillar P.
  • the depth of the mounting hole 210 that is, the thickness of the mask body 201 may be slightly larger or smaller than the height of the copper pillar P.
  • the mounting hole 210 includes an upper inner diameter portion 212 and a lower inner diameter portion 211 .
  • the upper inner diameter portion 212 corresponds to an upper portion of the mounting hole 210
  • the lower inner diameter portion 211 corresponds to a lower portion of the mounting hole 210 . That is, the upper inner diameter portion 212 is formed to pass through the upper surface of the mask body 201 , and the lower inner diameter portion 211 is formed to pass through the lower surface of the mask body 201 .
  • the inner diameter D1 of the lower inner diameter portion 211 is larger than the outer diameter of the copper filler P and smaller than the inner diameter D2 of the upper inner diameter portion 212 .
  • the inner diameter of the upper inner diameter part 212 and the lower inner diameter part 211 may be uniformly formed along the vertical direction, respectively, or may be formed such that the inner diameter gradually changes.
  • the upper inner diameter D2 of the upper inner diameter portion 212 is preferably formed to be larger than the inner diameter D1 of the lower end portion of the lower inner diameter portion 211 . Due to the structure of the mounting hole 210 as described above, it is possible to easily perform a process of mounting the copper pillar P in the mounting hole 210 .
  • the height H1 of the lower inner diameter portion 211 of the mask 200 is greater than the height H2 of the upper inner diameter portion 212 . With this configuration, the copper filler P is effectively guided toward the lower inner diameter portion 211 by the upper inner diameter portion 212 , and once the copper filler P is inserted into the lower inner diameter portion 211 , it is not separated therefrom. do.
  • the difference between the inner diameter D2 of the upper inner diameter portion 212 and the inner diameter D1 of the lower inner diameter portion 211 is the difference between the outer diameter of the copper pillar P and the inner diameter D1 of the lower inner diameter portion 211 . It is better to make it larger. With such a structure, it is possible to effectively guide the copper filler P to the lower inner diameter portion 211 . In addition, the positional accuracy of the copper filler P inserted into the lower inner diameter portion 211 may be improved.
  • a substrate 100 on which a solder paste is printed is prepared on each electrode pad 110 (step (a)).
  • a solder paste is printed on the substrate 100 using a screen printing method.
  • step (b) the mask 200 configured as described above is prepared and horizontally disposed as shown in FIG. 1 (step (b)).
  • the substrate 100 on which the previously prepared solder paste is printed is disposed under the mask 200 disposed in this way (step (c)).
  • the substrate 100 is disposed and fixed to the substrate support module 500 as shown in FIG. 1 .
  • the substrate support module 500 is configured to adjust the position and orientation of the substrate 100 .
  • the copper pillars P are moved with respect to the upper surface of the mask 200 to mount the copper pillars P on the lower inner diameter portion 211 of the mounting hole 210 of the mask 200 ((d)) step).
  • the copper pillars P are brought into contact with the solder paste printed on the electrode pad 110 of the substrate 100 , respectively.
  • the copper filler (P) is formed in a cylindrical shape made of copper or a copper alloy material. In some cases, it is also possible to use a copper filler (P) formed in various shapes such as an octagonal column or a hexagonal column instead of a cylindrical column.
  • the height of the copper filler (P) is formed larger than the outer diameter of the copper filler (P).
  • the copper pillars P are moved in random directions with respect to the upper surface of the mask 200 , the copper pillars P are mounted in the mounting hole 210 .
  • the inner diameter of the upper inner diameter portion 212 of the mounting hole 210 is larger than the inner diameter of the lower inner diameter portion 211 , the copper pillar P may be more easily inserted into the mounting hole 210 . Due to the structure of the upper inner diameter portion 212 formed to be larger than the lower inner diameter portion 211 , the probability that a portion of the copper filler P is fitted into the upper inner diameter portion 212 increases.
  • the probability that the copper filler P is guided to move toward the lower inner diameter portion 211 increases due to the structure of the upper inner diameter portion 212 .
  • the probability that the copper filler P is mounted in the mounting hole 210 increases.
  • the time and yield of the process of mounting the copper filler P in the mounting hole 210 is improved, and the probability that the copper filler P is not mounted in the mounting hole 210 and is omitted is reduced.
  • FIG. 1 The mounting module 300 shown in FIG. 1 is a mounting module 300 in the form of a cyclone head.
  • the mounting module 300 includes a receiving member 310 and an injection hole 311 .
  • the accommodating member 310 is formed in a cylindrical container shape to accommodate a plurality of copper pillars (P).
  • the injection hole 311 is formed to be connected to the lower end of the accommodating member 310 through the inner wall of the accommodating member 310 , and is formed to inject compressed air into the accommodating member 310 .
  • compressed air is injected through the injection hole 311 , the copper fillers P inside the receiving member 310 move rapidly while being bounced in an arbitrary direction by the pressure of the air.
  • a plurality of copper pillars P inside the receiving member 310 move in an arbitrary direction in a state accommodated at a high density, and when a part is caught on the upper inner diameter part 212 of the mounting hole 210, the lower inner The probability of moving to the neck 211 increases.
  • the copper pillars P are sequentially mounted in the mounting holes 210 of the path through which the accommodating member 310 passes.
  • the copper fillers P are mounted in the mounting hole 210 of the mask 200 , the copper fillers P are temporarily attached to the substrate 100 by the viscosity of the solder paste printed on the electrode pad 110 . becomes stuck. As long as a relatively large impact is not applied to the substrate 100 , the copper pillars P remain attached to the substrate 100 .
  • step (d) When step (d) is completed in this way, as shown in FIG. 3 , the mask 200 is lifted with respect to the substrate 100 to perform the process of leaving only the copper pillars P on the substrate 100 ((e) ) step).
  • step (f) the solder paste printed on the substrate 100 is heated to bond the copper pillars P to the substrate 100.
  • Step (f) may be carried out in a variety of ways. It is also possible to bond the copper pillars P by heating the substrate 100 in an oven.
  • the position and direction of the copper filler (P) may be changed as the solder paste flows while the solder paste is melted.
  • a method of bonding the copper pillars P to the substrate 100 in a pressurized state using the copper pillars P is used.
  • the plate-shaped pressing member 401 is disposed on the copper pillars P disposed on the substrate 100 to press the copper pillars P (step (f-1)). In this way, when the copper pillars P are pressed against the substrate 100 by the weight or pressing force of the pressing member 401 and bonded to the substrate 100 while maintaining the positions of the copper pillars P, bonding to the substrate 100 is It is possible.
  • the copper pillars P are pressed using the pressing member 401 formed of a transparent material.
  • the solder paste printed on the substrate 100 is heated to bond the copper fillers P to the electrode pad 110 of the substrate 100 (step (f-2)).
  • the solder paste is heated by irradiating laser light through the pressing member 401 .
  • the laser light passes through the pressure member 401 made of a transparent material and is transmitted to the copper pillars P, the solder paste, the electrode pad 110 , and the substrate 100 to transmit energy.
  • the energy transferred by the laser light heats and melts the solder paste, thereby bonding the copper pillars P to the substrate 100 .
  • the quality of the copper pillar P bonding process may be improved.
  • the bonding process may be performed while simultaneously transmitting the laser light and fixing or maintaining the position of the copper pillar P by the pressing member 401 .
  • the mask 200 from the front includes a mounting hole 210 in which the inner diameters D2 and D1 of the upper inner diameter portion 212 and the lower inner diameter portion 211 are uniformly formed.
  • a mounting hole 210 in which the inner diameters D2 and D1 of the upper inner diameter portion 212 and the lower inner diameter portion 211 are uniformly formed.
  • the mask shown in FIG. 5 has a structure formed in a tapered shape so that the inner diameter of the upper inner diameter portion 222 of the mounting hole 220 formed in the mask body 201 increases toward the upper side.
  • the inner diameter of the lower inner diameter part 221 is kept constant, and is smaller than the inner diameter of the upper end of the upper inner diameter part 222 and is formed to be the same as the inner diameter of the lower end.
  • the mask 230 shown in FIG. 6 has a structure formed in multiple stages so that the inner diameter of the upper inner diameter portion 232 of the mounting hole 230 formed in the mask body 201 increases toward the upper side.
  • the inner diameter of the lower inner diameter portion 231 is maintained constant, and is formed smaller than the inner diameter of the upper end portion of the upper inner diameter portion 232 .
  • the cross section of the upper inner diameter portion 242 of the mounting hole 240 formed in the mask body 201 is formed in a curved shape and is formed to increase upward.
  • the inner diameter of the lower inner diameter portion 241 is kept constant.
  • the mask shown in FIG. 8 is formed in a tapered shape so that the inner diameter of the lower inner diameter portion 251 decreases toward the lower side.
  • the inner diameter of the upper inner diameter portion 252 is formed to be larger than the inner diameter of the upper end portion of the lower inner diameter portion 251 is formed uniformly.
  • the copper pillar P is guided to the lower inner diameter and it is easy to be inserted and the position of the copper filler P is fixed. There is this.
  • step (f) in a state in which the copper pillars P are pressed against the substrate 100 with the pressing member 401 of a transparent material, a method of irradiating laser light through the pressing member 401
  • step (f) in a state in which the copper pillars P are pressed against the substrate 100 with the pressing member 401 of a transparent material, a method of irradiating laser light through the pressing member 401
  • step (f) has been described as an example, other various methods of performing step (f) are possible.
  • step (f) using a light emitting module 410 in which a light source for generating and irradiating laser light and a transparent material pressing member 402 are integrally formed.
  • a transparent material pressing member 402 is installed in the light emitting module 410, and the light emitting module 410 is lowered to irradiate the copper pillars P with a laser light while pressing the copper pillars P to the substrate ( 100) will be bonded.
  • VICSEL VCSEL; Vertical-Cavity Surface-Emitting Laser, vertical-cavity surface light-emitting laser
  • step (c) of disposing the substrate 100 under the mask 200 in a state in which the mask 200 is first disposed by step (b) is performed step (b) and ( c) The order of steps may be changed. That is, it is also possible to dispose the mask 200 on the upper side of the substrate 100 in a state in which the substrate 100 is disposed and to perform step (d).

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

La présente invention concerne un procédé de liaison d'un substrat de pilier de cuivre à l'aide d'un masque, et plus particulièrement, un procédé de liaison d'un substrat de pilier de cuivre à l'aide d'un masque, des piliers de cuivre présentant la forme de cylindres étant efficacement positionnés sur un substrat et étant liés sur celui-ci avec une précision élevée. Le procédé de liaison d'un substrat de pilier de cuivre à l'aide d'un masque de la présente invention présente un avantage selon lequel les piliers de cuivre peuvent être efficacement positionnés sans perte sur le substrat et être liés sur celui-ci. De plus, le procédé de liaison d'un substrat de pilier de cuivre à l'aide d'un masque de la présente invention présente l'avantage d'une exécution efficace du processus de montage de piliers de cuivre d'une taille extrêmement petite sur des substrats.
PCT/KR2021/008599 2020-07-07 2021-07-06 Procédé de liaison d'un substrat de pilier de cuivre à l'aide d'un masque WO2022010234A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020200083246A KR20220005723A (ko) 2020-07-07 2020-07-07 마스크를 이용하는 구리 필러 기판 본딩 방법
KR10-2020-0083246 2020-07-07

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WO2022010234A1 true WO2022010234A1 (fr) 2022-01-13

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KR (1) KR20220005723A (fr)
TW (1) TWI757209B (fr)
WO (1) WO2022010234A1 (fr)

Citations (5)

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KR20110038519A (ko) * 2009-10-08 2011-04-14 엘지이노텍 주식회사 인쇄회로기판 및 이의 제조 방법
KR20150001205A (ko) * 2013-06-26 2015-01-06 삼성전자주식회사 솔더 볼 탑재 장치
KR101975103B1 (ko) * 2017-06-20 2019-05-03 주식회사 프로텍 플립칩 레이저 본딩 장치 및 플립칩 레이저 본딩 방법
KR20190092404A (ko) * 2016-12-19 2019-08-07 타츠타 전선 주식회사 패키지 기판 및 패키지 기판의 제조 방법
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JP5891771B2 (ja) * 2011-01-18 2016-03-23 富士通株式会社 表面被覆方法、並びに半導体装置、及び実装回路基板
KR101934421B1 (ko) * 2012-11-13 2019-01-03 삼성전자 주식회사 반도체 소자 및 이의 제조 방법
JP6366799B1 (ja) * 2017-02-10 2018-08-01 ルーメンス カンパニー リミテッド マイクロｌｅｄモジュール及びその製造方法
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Publication number Priority date Publication date Assignee Title
KR20110038519A (ko) * 2009-10-08 2011-04-14 엘지이노텍 주식회사 인쇄회로기판 및 이의 제조 방법
KR20150001205A (ko) * 2013-06-26 2015-01-06 삼성전자주식회사 솔더 볼 탑재 장치
KR20190092404A (ko) * 2016-12-19 2019-08-07 타츠타 전선 주식회사 패키지 기판 및 패키지 기판의 제조 방법
KR101975103B1 (ko) * 2017-06-20 2019-05-03 주식회사 프로텍 플립칩 레이저 본딩 장치 및 플립칩 레이저 본딩 방법
KR102078936B1 (ko) * 2018-11-07 2020-02-19 주식회사 프로텍 도전성 볼 탑재 방법

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TW202203405A (zh) 2022-01-16
TWI757209B (zh) 2022-03-01

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