WO2022008358A1 - Procédé de fabrication d'une tête d'irradiation d'une cible avec un faisceau de particules chargées - Google Patents
Procédé de fabrication d'une tête d'irradiation d'une cible avec un faisceau de particules chargées Download PDFInfo
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- WO2022008358A1 WO2022008358A1 PCT/EP2021/068277 EP2021068277W WO2022008358A1 WO 2022008358 A1 WO2022008358 A1 WO 2022008358A1 EP 2021068277 W EP2021068277 W EP 2021068277W WO 2022008358 A1 WO2022008358 A1 WO 2022008358A1
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- charged particles
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- 239000002245 particle Substances 0.000 title claims abstract description 127
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 20
- 230000001678 irradiating effect Effects 0.000 title claims abstract 3
- 238000009826 distribution Methods 0.000 claims abstract description 60
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
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- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K5/00—Irradiation devices
- G21K5/04—Irradiation devices with beam-forming means
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/10—Scattering devices; Absorbing devices; Ionising radiation filters
Definitions
- the invention relates to a method for manufacturing an irradiation head of a target with a beam of charged particles, as well as the irradiation head manufactured by this method.
- Such irradiation heads are used in many fields such as radiotherapy, proton therapy, medical imaging, in the field of security or others.
- These irradiation heads include:
- the shaping equipment typically includes:
- equalizing devices such as equalizing cones, to increase the homogeneity of the particles in a cross-section of the secondary beam
- the irradiation head also comprises a sensor which measures the intensity of the secondary beam.
- the shaping material absorbs charged particles and therefore reduces the intensity of the secondary beam.
- the shaping equipment is bulky, which increases the size of the irradiation head.
- the invention aims to provide an irradiation head in which the absorption of charged particles by the shaping equipment is limited and/or in which the size of the shaping equipment is reduced.
- the invention also relates to an irradiation head manufactured using the above method.
- the invention will be better understood on reading the following description, given solely by way of non-limiting example and made with reference to the drawings in which:
- FIG. 1 is a schematic illustration of the architecture of an irradiation head
- FIG. 2 is a perspective diagram of a spatial distribution of the density of charged particles in a primary beam
- Figure 3 is a sectional illustration of the spatial distribution shown in Figure 2;
- FIG. 4 is a perspective diagram of a spatial distribution of the density of charged particles in a secondary beam
- FIG. 5 is a schematic illustration and in vertical section, of an intensity sensor implemented in the irradiation head of Figure 1;
- FIG. 6 is a flowchart of a method of manufacturing the irradiation head of Figure 1;
- FIGS. 7 to 9 are diagrams illustrating different spatial distributions of the density of charged particles in a secondary beam.
- charged particle beam designates ionizing radiation, that is to say a beam capable of directly or indirectly producing ions during its passage through matter.
- Figure 1 shows a head 2 for irradiating a target 4 with a secondary beam 8 of charged particles.
- the target 4 can be an inert object or a part of a human body to be treated using the beam 8.
- the beam 8 propagates along an axis 10 of propagation directed towards the target 4.
- the axis 10 is parallel to a horizontal direction Z of an orthogonal reference XYZ.
- the Y direction of this mark is vertical.
- Figures 1 and following are oriented with respect to this XYZ reference.
- the beam 8 is a so-called "high energy" beam, that is to say a beam whose energy is greater than or equal to 1 MeV or 10 MeV.
- the energy of beam 8 is 6 MeV.
- the beam 8 is an electron beam (b- radiation).
- the charged particles are electrons.
- the beam 8 is a high-frequency pulsed beam, that is to say a beam which is formed by bursts of pulses repeated at regular intervals at a frequency f p .
- the frequency f p is greater than 1 kHz or 1 MHz or 100 MHz.
- Each burst of pulses is made up of a succession of short pulses of charged particles repeated at a frequency f z .
- “High frequency” denotes the fact that the frequency f z is greater than 1 GHz or 3 GHz and, generally, less than 100 GHz or 10 GHz.
- the head 2 comprises a casing 20 inside which are housed and fixed together the various components necessary to generate the beam 8.
- the casing 20 is also designed to isolate the interior of the casing vis-à-vis disturbances electromagnetic waves coming from outside this box.
- the housing 20 comprises an envelope made of conductive materials electrically connected to ground.
- the housing 20 includes an opening 22 through which the beam 8 is emitted.
- the opening angle of the beam 8. In the absence of such equipment, the characteristics of the beam 8 remain constant over distances less than 1 m or 50 cm.
- the head 2 comprises:
- the head 2 differs from the known irradiation heads essentially by the material 30. Thus, subsequently, the other components of the head 2 are not described in detail.
- Barrel 24 comprises:
- an acceleration chamber 42 which accelerates the charged particles produced by the source 40, and - a firing window 44 through which the beam 26 is emitted.
- the quantity of charged particles produced by the source 40 is controllable. In particular, this makes it possible to adjust the dose of charged particles delivered to target 4.
- the chamber 42 accelerates the charged particles produced by using electromagnetic fields for this.
- gun 24 is a gun known by the acronym LINAC (“Linear Particle Accelerator”).
- Beam 26 is an identical beam to beam 8 except that:
- the spatial distribution of charged particles in a beam cross section 26 is different from the spatial distribution of charged particles in a beam cross section 8.
- the charged particles of beam 26 are the same as those of beam 8.
- the angle ⁇ 1 is two, four or six times smaller than the angle ⁇ 2 .
- a "cross-section" of the beam is a section of the beam along a plane perpendicular to its axis of propagation.
- the spatial distribution 46 corresponds to the spatial distribution of the charged particles in a plane Pi located inside the housing 20 between the vertex B and the inlet of the material 30 for shaping.
- this plane Pi is located less than 50 cm or less than 10 cm from the firing window 44 .
- the plane Pi is located 5 cm from window 44.
- the spatial distribution 46 represents the density of charged particles at each point of the plane Pi .
- the x and y axes of the spatial distribution 46 correspond to the abscissa and ordinate axes, respectively. These x and y axes are contained in the plane Pi.
- the x and y axes are parallel, respectively, to the X and Y directions of the XYZ coordinate system. In FIG. 2, these x and y axes are graduated in centimeters.
- the axis 10 crosses the plane Pi at the level of the point of coordinates 0 cm in abscissa and 0 cm in ordinate.
- the density of charged particles has a maximum, denoted Dmaxi, at the level of the axis 10. Then, this density decreases progressively and continuously as one moves away from the axis 10 until it reaches a zero or practically zero value outside the cone inside which most of the particles are contained loaded with the beam. For example, in the case of the beam 26, the density Dmaxi is equal to 16 au.
- the spatial distribution 46 is symmetrical with respect to the axis 10.
- the way in which the density of the charged particles decreases when one moves away from the axis 10 following a predetermined direction contained in the plane Pi is the same regardless of this predetermined direction.
- the spatial distribution 46 has a Gaussian geometry.
- a curve 48 (figure 3) in the shape of a bell.
- the curve 48 is that obtained along a cutting plane perpendicular to the x axis of the abscissas. More precisely, the curve 48 is here, for example, a Gaussian function.
- the curve 48 shows the homogeneity of the spatial distribution of the charged particles in the plane Pi. More precisely, in this text, the homogeneity of the spatial distribution of the charged particles is represented by a physical quantity called "distance" and denoted di in the plane Pi.
- the distance di is the distance, expressed in centimeters, which separates the axis 10 from the point of the plane Pi where the density of the charged particles is equal to Dmedi. Density Dmedi is the median density of charged particles, i.e. the density equal to Dmaxi/2.
- the greater the distance di the better the homogeneity of the spatial distribution of the charged particles in the plane Pi.
- the greater the distance di the greater the angle ai.
- the homogeneity of beam 26 is mediocre. For example here, the distance di is less than 0.5 cm and the angle ai is small.
- the material 30 is interposed, along the axis 10, between the window 44 and the opening 22, to modify the homogeneity and the opening angle of the beam 26 so as to obtain the beam 8 which has a desired homogeneity and the opening angle a 2 .
- the desired homogeneity and the opening angle a 2 are predetermined characteristics imposed by the user of the head 2. These characteristics are therefore data known in advance and therefore even before the design of the head 2.
- FIG. 4 represents a spatial distribution 50 of the charged particles for the beam 8.
- the spatial distribution 50 is identical to the spatial distribution 46 except that:
- the distance d 2 is defined as the distance di except that it is measured in the spatial distribution of the beam 8.
- Dmax 2 is of the order of 0.0008 ua.
- the homogeneity of the beam 8 is at least twice or four times or ten times greater than the homogeneity of the beam 26.
- the distance d 2 is twice, four times or ten times greater than the distance say .
- the equipment 30 comprises only a sensor 60 of the intensity of the beam 8.
- the head 2 is devoid of any other shaping equipment such as an equalizing device or a collimator, capable of modifying the homogeneity and/or the beam opening angle 8.
- the sensor 60 transmits the measured intensity of the beam 8 to the control unit 32.
- the sensor 60 is connected, via a wired connection, to the unit 32.
- the unit 32 controls the gun 24 according to the intensity of the beam 8 measured by the sensor 60. Typically, the unit 32 controls the gun 24 so as to maintain the dose of charged particles applied to the target 4 equal or practically equal to a pre-recorded setpoint C d. For example, for this, the unit 32 controls the source 40 according to a difference between the measured intensity of the beam 8 and an intensity setpoint.
- the unit 32 comprises a microprocessor 62 and a memory 64.
- the memory 64 comprises the instructions executed by the microprocessor 62 in order to control the barrel 24.
- FIG. 5 represents in greater detail a possible example of an arrangement of sensor 60.
- the architecture of sensor 60 is identical to that described with reference to FIG. 2 of application WO2017198630.
- the reader can consult this request.
- the sensor 60 is a semiconductor sensor. More precisely, the sensor 60 comprises an active zone 70 capable of generating electric charges when charged particles pass through it.
- zone 70 is located on axis 10. Here, it is centered on axis 10. More precisely, in this embodiment, zone 70 is a cylinder of revolution whose axis of revolution is confused with axis 10.
- the zone 70 has an input face 72 located in the plane Pi and directly exposed to the beam 26.
- the zone 70 also has an output face 74 located in a plane P 2 perpendicular to the axis 10.
- the beam 26 emerges from the sensor 60 via the face 74 and forms the beam 8.
- the spatial distribution of the charged particles is, for example, that shown in FIG. depletion also called "space charge zone".
- This region 76 produces charge carriers of a first type and charge carriers of a second type when it is traversed by the charged particles of the beam 26.
- This region 76 is located between the face 72 and a limit represented by a dotted line parallel to the direction Y in FIG. 5.
- zone 70 comprises a semi-conducting layer 78 and a conducting layer 80 directly deposited on the face of layer 78 facing barrel 24.
- Face 72 is here formed by the face exterior of layer 80 facing barrel 24.
- Face 74 of zone 70 is formed by the face of layer 78 facing target 4.
- the thickness e, of layer 78 is the distance, along the axis 10, between its two opposite faces. Here, this thickness is constant inside the whole area 70.
- the region 76 is located in the region of the layer 78 in contact with the conductive layer 80.
- the association of the layers 78 and 80 forms a junction with rectifying effect and more precisely a "Schottky diode" in this embodiment. .
- the semiconductor material used to make layer 78 has two energy bands known by the terms, respectively, “valence band” and “conduction band”. In the case of semiconductor materials, these two energy bands are separated from each other by a forbidden band better known as the “gap”.
- the semiconductor material used to produce layer 78 is a wide-gap semiconductor material, that is to say a semiconductor material having a gap whose value is at least twice greater than the silicon gap value. Typically, the gap of the semiconductor material used for layer 78 is therefore greater than 2.3 eV.
- the layer 78 is made of silicon carbide SiC-4H.
- the expression “an element made of material X” means that material X represents at least 70% or 80% or 90% of the mass of this element.
- the semiconductor layer 78 is additionally doped.
- a P doping can be obtained by implanting boron atoms and, alternatively, an N doping can be obtained by implanting nitrogen atoms.
- the conductive layer 80 is for example made of metal such as copper, zinc or gold.
- the layers 78 and 80 extend transversely beyond the zone 70 to form a peripheral part 84 which completely surrounds the active zone 70. Unlike zone 70, the peripheral part 84 n is not traversed by the charged particle beam.
- the portion 86 of the conductive layer 80 which extends beyond the zone 70 forms a first electrode which collects the charge carriers of the first type produced by the region 76.
- the thickness of the semiconductor layer 78 in the peripheral part 84 is greater than the thickness e, so that it forms the side walls of a blind hole 88 whose bottom coincides with the face 74.
- the orthogonal projection of the side wall of the hole 88 on the plane P 2 completely surrounds the face 74.
- a conductive layer 90 is for example made of the same conductive material conductive layer 80.
- Conductive layer 90 forms a second electrode which collects charge carriers of the second type produced by region 76.
- face 74 is structured as described in application WO2017198630A1.
- metal balls can be introduced into the semiconductor layer 78 as described in this same patent application. The method of manufacturing the head 2 will now be described with reference to Figure 6.
- the different characteristics of the beam 8 which must be generated by the head 2 are acquired. These characteristics include the type of charged particles and the energy range of the beam 8.
- a gun 24 capable of generating a beam with the same charged particles and over an energy range that encompasses the desired energy range for the beam 8 is provided.
- this 24 gun is built or purchased. Therefore, at this stage, the different characteristics of the beam 26 are known. In particular, its angle ai and the distance di are then known or determinable.
- a phase 104 of designing and manufacturing the sensor 60 then begins so that it alone fulfills both:
- substantially modified means a modification which makes it possible to obtain a distance d 2 at least twice and, preferably, at least four or ten times greater than the distance di.
- the thickness e is systematically chosen as low as possible to maximize the transmission rate of the sensor.
- the transmission rate of a sensor is equal to the ratio l out / n , where U t and l in are the intensities of the beams, respectively, leaving and entering the sensor.
- U t and l in are the intensities of the beams, respectively, leaving and entering the sensor.
- this idea is exploited to design a sensor 60 which, on its own, makes it possible to transform the beam 26 into a beam 8 without the aid of additional equipment for shaping the beam.
- the semiconductor material in which the semiconductor layer 78 must be made is first selected from the list of semiconductor materials which are good candidates for manufacturing the active area 70.
- this semiconductor material is silicon carbide SiC-4H.
- the different characteristics of the semiconductor material chosen are therefore known. In particular, the density of the chosen material is known.
- the thickness e of the semiconductor layer 78 is adjusted so that the spatial distribution of the charged particles of the beam 8 in the plane P 2 is substantially modified with respect to the distribution space 46 of the beam 26 in the plane Pi.
- the thickness e is adjusted so that the distance d 2 is at least twice greater than the distance di.
- this first selection criterion is as follows:
- the thickness e, selected corresponds to a distance d 2 greater than a threshold dmin 2 , where the threshold dmin 2 is greater than twice the distance di.
- the thickness e is chosen during an operation 116.
- the values are chosen included in an interval [emin, ; emax] and are spaced from each other by a pitch, for example, regular.
- the value emin is for example greater than or equal to the minimum thickness that the semiconductor layer 78 must have so as to allow the measurement of the intensity of the beam 8.
- the value emax is five, or ten or fifty times greater than the emin value,.
- the emax value is less than 1 cm or 5 mm.
- the value emin is equal to 50 ⁇ m
- the minimum value of the thickness e which makes it possible to measure the intensity of the beam 8 is rather of the order of 10 ⁇ m.
- the emax value is equal to 1 mm.
- the regular pitch is chosen so that the number of trials to be carried out is reasonable.
- the pitch chosen is 50 ⁇ m.
- the value of the angle a 2 and of the rate T 2 of transmission of the sensor 60 corresponding to each of the chosen values of the thickness e are also determined.
- the spatial distribution of the charged particles of the beam in the plane P 2 is first constructed by numerical simulation. For example, such a numerical simulation is carried out using the MCNP software (Monte-Carlo N-Particules transport code) or the Géant software (GEometry ANd Tracking). This software makes it possible to model the beam 26 and the active zone 70.
- the value of the distance d 2 is then determined. For this, for example:
- This calculated distance is the distance d 2 of the spatial distribution of the beam in the plane P 2 .
- Such a numerical simulation also makes it possible to determine the number of charged particles which crosses the planes Pi and P 2 during a predetermined time interval. The intensities l in and U t are then deduced from this information.
- the opening angle of the simulated beam 8 which emerges from the face 74 is also determined. Each time a specific value of the thickness e is simulated, this specific value is recorded on a line of a result table and the values of the distance d 2 , of the rate T 2 and of the angle a 2 corresponding to this thickness are recorded on the same line.
- FIG. 4 is a first example of spatial distribution obtained by digital simulation when the thickness e i is taken as equal to 200 ⁇ m.
- FIGS. 7 to 9 represent identical spatial distributions except that these are obtained for thicknesses e, equal to, respectively, 50 ⁇ m, 100 ⁇ m and 300 ⁇ m. As shown in Figures 4 and 7 to 9, the distance d 2 increases sharply as a function of the thickness e,.
- the value of the thickness e, to be used to manufacture the sensor 60 is selected from among the different values simulated during the operation 118.
- additional selection criteria are used. More specifically, the following two additional selection criteria are used:
- the thickness e must correspond to a transmission rate T 2 greater than a threshold T , and
- the thickness e must correspond to a value of the angle a 2 greater than a threshold amin 2 .
- the threshold T min2 is greater than 0.4 or 0.5 and preferably greater than 0.7 or 0.9.
- the threshold amin 2 is for example greater than two or four or ten times the angle ai.
- criterion 1) is more important than criterion 2)
- criterion 2) is more important than criterion 3).
- the sensor 60 design phase 104 is then complete. For example, here, it is the thickness e, equal to 200 ⁇ m which was selected to manufacture the head 2.
- the sensor 60 designed during the phase 104 is manufactured.
- the semiconductor layer 78 is produced in such a way as to have the thickness e, selected during step 120.
- the irradiation head 2 is manufactured.
- the barrel 24 provided during step 102 and the sensor 60 manufactured during step 130 are assembled and fixed inside the housing 20 to obtain the arrangement described in detail with reference to Figure 1.
- the depletion region 76 can also be formed as a PN diode or a PiN diode or by the depletion region of a field effect transistor.
- the different architectures of a semiconductor sensor described in application WO2017198630A1 can be implemented to design a semiconductor sensor capable of being used instead of sensor 60 and fulfilling the same functions.
- the blind hole 88 is omitted.
- the semiconductor layer 78 is made of diamond or of a semiconductor alloy composed of elements from column III- V or ll-VI.
- the conductive layers 80, 90 can be made of conductive materials other than metal.
- they are made of mono or multilayer graphene. They can also be made of other metals such as nickel, aluminum, titanium or tungsten. Layers 80 and 90 are not necessarily made from the same conductive materials.
- the structuring of the face 74 can be omitted.
- the incorporation of metal balls in the semiconductor layer 78 can also be omitted.
- the layer 80 has little influence on the spatial distribution of the charged particles in the plane P 2 .
- only layer 78 is modeled in the simulation software.
- the spatial distributions are not determined by numerical simulation but experimentally.
- a grid of sensors is placed in the plane Pi. These sensors are for example arranged at regular intervals in the X and Y directions. Each sensor measures locally the intensity of the charged particle beam at its location. The intensity of the charged particle beam at a particular location depends on the number of charged particles received during a time interval at that location and therefore on the density of charged particles at that location. This sensor grid therefore makes it possible to measure the spatial distribution of the charged particles in the plane containing this sensor grid.
- a semiconductor layer 78 with a chosen thickness of zero is placed between the planes Pi and P 2 and the sensor grid is placed in the plane P 2 , that is to say just behind the semiconductor layer under test.
- No sensor grid is placed in this case upstream of the semiconductor layer, that is to say on the side facing the barrel 24.
- the sensor grid makes it possible to measure the spatial distribution of the charged particles. in the plane P 2 in the presence of the semiconductor layer. Then, the procedure is as described above, that is to say that different thicknesses of the semiconductor layer are successively tested until the suitable thickness is found. It is also possible to use a single sensor instead of a grid of several sensors. In the latter case, this single sensor is moved in the plane where it is desired to record the spatial distribution of the charged particles in order to measure the intensity of the beam at different locations in this plane.
- the number of selection criteria can also be reduced.
- one of the criteria 2) and 3) is omitted or replaced by another criterion.
- criteria 2) and 3) are omitted, the determination during operation 118 of the transmission rate T 2 and/or of the value of the angle a 2 can then be omitted.
- the order of priority between the different selection criteria can also be modified. For example, the priority of criterion 3) may be higher than that of criterion 1) or 2).
- Criterion 3 can be replaced or supplemented by a criterion which imposes a maximum value on the angle a 2 .
- Physical quantities other than the distance di or d 2 can be used as a measure of the homogeneity of a spatial distribution of charged particles. However, whatever the physical quantity used, this is representative of a distance di or d 2 . Typically, there is a one-to-one correspondence between the values of this physical quantity and the values of the distance di or d 2 .
- a physical quantity representative of the distance di or d 2 is the standard deviation or the variance of the spatial distribution.
- the standard deviation of the spatial distribution is, for example, calculated from the data of a cross-section of the spatial distribution such as that represented in FIG. 3.
- the ratio Dmax 2 /Dmaxi is also a physical quantity representative of the homogeneity of the spatial distribution.
- distances other than distance di or d 2 can be used.
- a distance between two points corresponding to two different predetermined densities, respectively, D 2 and D 3 where the density D 3 is different from the density D 2 .
- the cross-section of the beam 8 is not necessarily circular.
- the cone which delimits the beam 8 at the output of the head 2 is not necessarily a cone of revolution.
- the manufacturing method described here also applies to the manufacture of irradiation heads for charged particle beams of lower energy and in particular for charged particle beams whose energy is less than 1 MeV or 100 keV or 10 keV.
- the beam is not necessarily an electron beam.
- the manufacturing process described here applies to any type of charged particle beam.
- charged particles belong to the group consisting of electrons, positrons, protons, and heavy charged particles.
- Heavy charged particles include all particles with a nucleus. For example, these are a particles, carbon ions, copper ions or gold ions.
- there is at least one thickness e which makes it possible to substantially modify the spatial distribution of the beam. 26.
- step 112 leads to the selection of a zero thickness, which is not compatible with other manufacturing constraints, such as for example the size of the sensor 60, then one of the previous choices can be modified. then step 112 repeated. For example, another semiconductor material is selected for layer 78.
- the beam 8 is not a pulsed beam but a continuous beam.
- the control unit 32 can also be placed outside the housing 20.
- the equipment 30 comprises, in addition to the sensor 60, an equalizing device and/or a collimator.
- this equalizing device and/or this collimator is preferably placed upstream of the sensor 60.
- the equalizer and/or the collimator are simpler and less bulky.
- an additional equalizing device or an additional collimator can be used in addition to the sensor.
- the use of the sensor described here makes it possible to simplify this equalizing device or this collimator, since a substantial part of the work of shaping the charged particle beam is carried out by the sensor.
- the number and/or the structure of the additional equalizing device and/or of the additional collimator are simplified. Consequently, even in the latter case, the sensor described here makes it possible to simplify the irradiation head and therefore to limit its size while at the same time limiting the problem of absorption of charged particles by the form.
- the selection of the thickness of the semiconductor layer so as to substantially increase the aperture angle of the charged particle beam makes it possible to obtain both a sensor which substantially increases the aperture angle while being able, at the same time, to substantially homogenize the charged particle beam.
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EP21739625.8A EP4179551A1 (fr) | 2020-07-10 | 2021-07-01 | Procédé de fabrication d'une tête d'irradiation d'une cible avec un faisceau de particules chargées |
CA3183838A CA3183838A1 (fr) | 2020-07-10 | 2021-07-01 | Procede de fabrication d'une tete d'irradiation d'une cible avec un faisceau de particules chargees |
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FRFR2007366 | 2020-07-10 | ||
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CA (1) | CA3183838A1 (fr) |
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FR2379294A1 (fr) | 1977-02-08 | 1978-09-01 | Cgr Mev | Dispositif de radiotherapie neutronique utilisant un accelerateur lineaire de particules |
WO2017198630A1 (fr) | 2016-05-17 | 2017-11-23 | Université D'aix Marseille | Detecteur de particules realise dans un materiau semi-conducteur |
US20190269940A1 (en) | 2018-03-01 | 2019-09-05 | Uih-Rt Us Llc | Devices and methods for measuring a radiation output rate and monitoring beam energy |
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2020
- 2020-07-10 FR FR2007366A patent/FR3112400B1/fr active Active
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2021
- 2021-07-01 CA CA3183838A patent/CA3183838A1/fr active Pending
- 2021-07-01 EP EP21739625.8A patent/EP4179551A1/fr active Pending
- 2021-07-01 WO PCT/EP2021/068277 patent/WO2022008358A1/fr active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2379294A1 (fr) | 1977-02-08 | 1978-09-01 | Cgr Mev | Dispositif de radiotherapie neutronique utilisant un accelerateur lineaire de particules |
WO2017198630A1 (fr) | 2016-05-17 | 2017-11-23 | Université D'aix Marseille | Detecteur de particules realise dans un materiau semi-conducteur |
US20190269940A1 (en) | 2018-03-01 | 2019-09-05 | Uih-Rt Us Llc | Devices and methods for measuring a radiation output rate and monitoring beam energy |
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FR3112400A1 (fr) | 2022-01-14 |
CA3183838A1 (fr) | 2022-01-13 |
EP4179551A1 (fr) | 2023-05-17 |
FR3112400B1 (fr) | 2022-06-17 |
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