WO2022007132A1 - Tft array substrate, display apparatus, and method for preparing tft array substrate - Google Patents

Tft array substrate, display apparatus, and method for preparing tft array substrate Download PDF

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Publication number
WO2022007132A1
WO2022007132A1 PCT/CN2020/109926 CN2020109926W WO2022007132A1 WO 2022007132 A1 WO2022007132 A1 WO 2022007132A1 CN 2020109926 W CN2020109926 W CN 2020109926W WO 2022007132 A1 WO2022007132 A1 WO 2022007132A1
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Prior art keywords
light
layer
emitting
monochromatic
monochromatic light
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PCT/CN2020/109926
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French (fr)
Chinese (zh)
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蔡振飞
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武汉华星光电半导体显示技术有限公司
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Publication of WO2022007132A1 publication Critical patent/WO2022007132A1/en

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/86Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/1201Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/38Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present application relates to the field of display technology, and in particular, to a TFT array substrate, an AMOLED display device using the TFT array substrate, and a preparation method of the TFT array substrate.
  • AMOLED Active-Matrix Organic Light Emitting Diode
  • the prior art usually adopts the practice of adding polarizers, as shown in FIG. 1 , the thin film transistor (Thin Film Transistor (TFT) substrate 10 includes a substrate 100, an emission anode 105, a signal line 106, and a light-emitting layer 107 that are sequentially arranged on the sink 100 along the light-emitting direction.
  • TFT Thin Film Transistor
  • a layer of linear polarizers 101 and four layers are arranged on the TFT substrate 10 1/4 circular polarizer 102, when ambient light 301 passes through linear polarizer 101, ambient light 301 is filtered into linear polarized light 302 in a single direction, and then passes through circular polarizer 103 of 1/4 wave plate, it becomes It is the circularly polarized light 303 with a phase deflection of 45°.
  • the circularly polarized light irradiates the signal line of the substrate or the reflective anode 105 in the pixel opening area and is reflected back, and passes through the circular polarizer 103 of the 1/4 wave plate again.
  • the phase of the light is transformed by 90 °, the linear polarizer 302 can no longer be passed through, so that the ambient light cannot reach the human eye, so that the ambient light can be prevented from being emitted to the human eye by the organic light emitting diode (Organic Light Emitting Diode, OLED) substrate.
  • OLED Organic Light Emitting Diode
  • the current polarizer is expensive, and its light transmittance is only 40% ⁇ 50%. While filtering the ambient light, it will also affect the light emitted by the OLED device. As a result, the brightness of the AMOLED display device will be reduced, and the luminous efficiency of the OLED device will be reduced. When the impact is reached, the power consumption during use is increased.
  • the existing OLED devices have low luminous efficiency and high power consumption.
  • the invention provides a TFT array substrate, an AMOLED display device, and a preparation method of the TFT array substrate.
  • a light conversion layer By arranging a light conversion layer on the TFT array substrate, the monochromatic light-emitting layer and the light conversion layer are combined to emit three primary colors of light, and the light is converted by light.
  • the layer absorbs incident ambient light.
  • the combination of the monochromatic light-emitting layer and the light conversion layer is adopted to reduce the reflection of the TFT substrate to ambient light, and the incident ambient light is absorbed by the light conversion layer, so as to achieve the purpose of preventing the reflection of ambient light without a polarizer, and improve the luminescence of the OLED device.
  • Efficiency and brightness of AMOLED display devices, reducing AMOLED The power consumption of the display device, and the AMOLED device also saves costs by eliminating the polarizer.
  • FIG. 1 is a schematic cross-sectional view of a TFT array substrate in the prior art
  • FIG. 2 is a schematic cross-sectional view of a TFT array substrate provided by the present application.
  • FIG. 3 is a schematic flowchart of a method for preparing a TFT array substrate provided by the present application.
  • the monochromatic light emitting layer 201 is a blue OLED, the first monochromatic light is blue light, the second monochromatic light is red light, the third monochromatic light is green light, and the third monochromatic light is green light.
  • a light emitting area 210 emits blue light, the first light conversion area 213 is a green light conversion area, and the second light conversion area 214 is a red light conversion area.
  • the monochromatic light emitting layer 201 cooperates with the light conversion layer 203 to emit three primary colors of red, green and blue. Light.
  • the monochromatic light emitting layer 201 can also use the Green light OLED or red light OLED, when red light OLED is used as monochromatic light emitting layer 201, the corresponding light conversion layer 203 is green light conversion layer and blue light conversion layer, when green light OLED is used as monochromatic light emitting layer 201, The corresponding light conversion layers 203 are red light conversion layers and blue light conversion layers.
  • a non-ferrous metal layer is provided on the surface of the signal line 202 to absorb the ambient light irradiated on the surface of the signal line 202 301, the non-ferrous metal layer may use chromium or a chromium-containing alloy.
  • the light conversion sheet 203 When the light conversion sheet 203 is arranged in the TFT substrate 20 and the non-ferrous metal layer is arranged on the surface of the signal line 202, most of the ambient light 301 irradiated on the TFT substrate 20 can be absorbed, but some ambient light 301 is still irradiated to The signal line 202 and the reflective anode 205 in the pixel opening area are reflected; in order to further reduce the reflection of the ambient light 301, in some embodiments, as shown in FIG.
  • the TFT array substrate 20 further includes a light shielding layer 204, the signal line 202 and The light-shielding layer 204 is correspondingly arranged, and the signal line 202 and the light-shielding layer 204 are arranged in sequence along the light-emitting direction; the ambient light 301 is reflected after irradiating the signal line 202 and the reflective anode 205 in the pixel opening area, and the reflected ambient light is reflected by the light-shielding layer 204
  • the shading further reduces the reflection of the ambient light 301; in order to ensure a good shading effect, the shading layer 204 needs to have a certain thickness, and the thickness may be 100 nanometers to 150 nanometers.
  • the material of the light-shielding layer 204 is black resin. It can be understood that the light-shielding layer 204 can also be made of other materials that can better absorb light, such as alloys containing chromium; of course, the light-shielding layer 204 is made of black resin. The manufacturing cost of the display device can be reduced.
  • the width of the light shielding layer 204 is greater than the width of the signal line 202.
  • the layer 204 covers the signal line 202, which can ensure that the light reflected from the signal line 202 and the reflective anode 205 in the pixel opening area can be completely blocked by the light shielding layer 204; it should be noted that the light shielding layer 204 can not be too wide, if it is too wide It will block the light emitted by the OLED and affect the brightness of the display device; on the premise of not affecting the light emission of the OLED, increasing the width of the light-shielding layer 204 so that it can completely cover the signal line 202 is to reduce the reflection of the TFT substrate 20 for ambient light. advantageous.
  • the TFT array substrate 20 further includes a protective resin layer 206 .
  • the light transmittance of the protective resin layer needs to be greater than 95%. It is understandable that the greater the light transmittance of the protective resin layer, the smaller the impact on the brightness of the AMOLED display device.
  • the TFT array substrate is further Two elliptical polarizers 208 are attached, and the elliptical polarizer 208 can increase AMOLED
  • the exit angle of the light emitted by the display device plays the role of anti-glare.
  • the embodiment of the present application also provides a method for preparing a TFT array substrate, and the method for preparing the TFT array substrate includes the following steps:
  • the monochromatic light-emitting layer 201 includes a first light-emitting region 210 , a second light-emitting region 211 and a third light-emitting region 212 .
  • the monochromatic light-emitting layer 201 is fabricated by evaporation method, and the evaporation method is cheaper than the traditional FFM (Fine Metal Mask, fine metal mask) method. , and the use of evaporation method helps to reduce the distance between pixels, thereby improving the pixels (Pixels Per Inch, PPI) of the AMOLED display device, so that the display effect of the AMOLED display device is better.
  • FFM Fe Metal Mask, fine metal mask
  • PECVD plasma-enhanced chemical vapor deposition
  • IJP Ink Jet Printing
  • the light conversion layer 203 includes a first light conversion area 213 and a second light conversion area 214, the second light conversion area 214 corresponds to the third light emitting area 212, the first light conversion area 213 corresponds to the second light emitting area 211, and the second light conversion area 214 corresponds to the third light emitting area 212.
  • the conversion area 214 is used to convert the received first monochromatic light into the second monochromatic light, and the first light conversion area 213 is used to convert the received first monochromatic light into the third monochromatic light, the first monochromatic light , the second monochromatic light and the third monochromatic light are different.
  • a light shielding layer 204 is formed in the region of at least one signal line 202 .
  • the light shielding layer 204 is formed in the routing area of the signal line 202 by a photolithography process, which can effectively block and absorb the ambient light reflected from the signal line 202 and the reflective anode 205 in the pixel opening area, further reducing the For the reflection of ambient light 301, the material of the light-shielding layer 204 can be non-ferrous metal chromium or chromium-containing alloy. Non-ferrous metal chromium or chromium-containing alloy has a good absorption effect on light. Resins are more environmentally friendly than using chromium-containing metals, and at the same time cost less.
  • a protective resin layer 206 is coated on the light conversion layer 203 and the light shielding layer 204. While protecting the TFT substrate, it also makes the surface of the TFT substrate flat. In order not to affect the light emitted by the light-emitting layer 201 and not reduce the brightness of the AMOLED display device, the light transmittance of the material used in the protective resin layer 206 needs to be 95%. From the above, it can be understood that the higher the light transmittance of the material, the smaller the influence of the protective resin layer 206 on the brightness of the AMOLED display device.
  • two elliptically polarizers 208 are pasted on the protective resin layer 206 by a bonding method.
  • two elliptical polarizers 208 can increase the exit angle of the light emitted by the light emitting layer 201, thereby effectively preventing glare.
  • the AMOLED display device includes a TFT array substrate 20
  • the TFT array substrate 20 includes a substrate 200 , a monochromatic light-emitting layer 201 , a signal line 202 and a light conversion layer 203
  • the signal line 202 is arranged between the monochromatic light emitting layers 201
  • the monochromatic light emitting layer 201 and the light conversion layer 203 are arranged in sequence along the light emitting direction
  • the monochromatic light emitting layer 201 includes a first light emitting area 210, a second light emitting area 211 and a third light emitting area 201.
  • the light conversion layer 203 includes a first light conversion area 213 and a second light conversion area 214, the second light conversion area 214 corresponds to the third light emitting area 212, and the first light conversion area 213 corresponds to the second light emitting area 211 , the second light conversion area 214 is used to convert the received first monochromatic light into the second monochromatic light, and the first light conversion area 213 is used to convert the received first monochromatic light into the third monochromatic light, so The first monochromatic light, the second monochromatic light and the third monochromatic light are different; the light emitted by the monochromatic light-emitting layer 201 will be converted into wavelengths after passing through the light conversion layer, and its brightness will not be lost basically, but Since the ambient light 301 is white light, when the ambient light 301 passes through the light conversion layer, the light conversion layer 203 will only reflect the light of the wavelength corresponding to its color, and the light of other wavelengths will be absorbed by the light conversion layer 203
  • the embodiments of the present application also provide a method for preparing a TFT array substrate, and the method for preparing a TFT array substrate includes the following steps:
  • the monochromatic light-emitting layer for emitting first monochromatic light, the monochromatic light-emitting layer comprising a first light-emitting region, a second light-emitting region and a third light-emitting region;
  • a light conversion layer is formed on the encapsulation layer, the light conversion layer includes a first light conversion area and a second light conversion area, the second light conversion area corresponds to the third light emitting area, the first light conversion area The conversion area corresponds to the second light-emitting area, the second light conversion area is used for converting the received first monochromatic light into the second monochromatic light, and the first light conversion area is used for converting the received first monochromatic light into the second monochromatic light.
  • the monochromatic light is converted into a third monochromatic light, and the first monochromatic light, the second monochromatic light and the third monochromatic light are different.
  • FIG. 3 is a flowchart of an embodiment of a method for preparing a TFT array substrate in an embodiment of the present application, and the method includes:
  • the monochromatic light-emitting layer 201 includes a first light-emitting region 210 , a second light-emitting region 211 and a third light-emitting region 212 .
  • the monochromatic light-emitting layer 201 is fabricated by evaporation method, and the evaporation method is cheaper than the traditional FFM (Fine Metal Mask, fine metal mask) method. , and the use of evaporation method helps to reduce the distance between pixels, thereby improving the pixels (Pixels Per Inch, PPI) of the AMOLED display device, so that the display effect of the AMOLED display device is better.
  • FFM Fe Metal Mask, fine metal mask
  • PECVD plasma-enhanced chemical vapor deposition
  • IJP Ink Jet Printing
  • the light conversion layer 203 includes a first light conversion area 213 and a second light conversion area 214, the second light conversion area 214 corresponds to the third light emitting area 212, the first light conversion area 213 corresponds to the second light emitting area 211, and the second light conversion area 214 corresponds to the third light emitting area 212.
  • the conversion area 214 is used to convert the received first monochromatic light into the second monochromatic light, and the first light conversion area 213 is used to convert the received first monochromatic light into the third monochromatic light, the first monochromatic light , the second monochromatic light and the third monochromatic light are different.
  • FIG. 3 is a flowchart of an embodiment of a method for preparing a TFT array substrate in an embodiment of the present application, and the method includes:
  • the monochromatic light-emitting layer 201 includes a first light-emitting region 210 , a second light-emitting region 211 and a third light-emitting region 212 .
  • the monochromatic light-emitting layer 201 is fabricated by evaporation method, and the evaporation method is cheaper than the traditional FFM (Fine Metal Mask, fine metal mask) method. , and the use of evaporation method helps to reduce the distance between pixels, thereby improving the pixels (Pixels Per Inch, PPI) of the AMOLED display device, so that the display effect of the AMOLED display device is better.
  • FFM Fe Metal Mask, fine metal mask
  • PECVD plasma-enhanced chemical vapor deposition
  • IJP Ink Jet Printing
  • the light conversion layer 203 includes a first light conversion area 213 and a second light conversion area 214, the second light conversion area 214 corresponds to the third light emitting area 212, the first light conversion area 213 corresponds to the second light emitting area 211, and the second light conversion area 214 corresponds to the third light emitting area 212.
  • the conversion area 214 is used to convert the received first monochromatic light into the second monochromatic light, and the first light conversion area 213 is used to convert the received first monochromatic light into the third monochromatic light, the first monochromatic light , the second monochromatic light and the third monochromatic light are different.
  • the light conversion layer 203 is formed on the encapsulation layer 207 by printing, and the light conversion layer 203 is used to cooperate with the monochromatic light emitting layer 201 to form red, green and blue Three primary colors of light; in actual production, photolithography can also be used to form the light conversion layer 203, but the photolithography method is used to form the light conversion layer 203, which is difficult to manufacture and difficult to mass-produce.
  • the conversion layer 203 has the advantages of being simple to manufacture and saving materials; the material of the light conversion layer 203 can be made of quantum dot material.
  • the quantum dot material is an inorganic material with a wide absorption spectrum and a narrow emission spectrum, which is good for ambient white light. and can meet the requirements of AMOLED display devices for high color gamut.
  • a light shielding layer 204 is formed in the region of at least one signal line 202 .
  • the light shielding layer 204 is formed in the routing area of the signal line 202 by a photolithography process, which can effectively block and absorb the ambient light reflected from the signal line 202 and the reflective anode 205 in the pixel opening area, further reducing the For the reflection of ambient light 301, the material of the light-shielding layer 204 can be non-ferrous metal chromium or chromium-containing alloy. Non-ferrous metal chromium or chromium-containing alloy has a good absorption effect on light. Resins are more environmentally friendly than using chromium-containing metals, and at the same time cost less.
  • a protective resin layer 206 is coated on the light conversion layer 203 and the light shielding layer 204. While protecting the TFT substrate, it also makes the surface of the TFT substrate flat. In order not to affect the light emitted by the light-emitting layer 201 and not reduce the brightness of the AMOLED display device, the light transmittance of the material used in the protective resin layer 206 needs to be 95%. From the above, it can be understood that the higher the light transmittance of the material, the smaller the influence of the protective resin layer 206 on the brightness of the AMOLED display device.
  • two elliptically polarizers 208 are pasted on the protective resin layer 206 by a bonding method.
  • two elliptical polarizers 208 can increase the exit angle of the light emitted by the light emitting layer 201, thereby effectively preventing glare.

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  • Manufacturing & Machinery (AREA)
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Abstract

Provided are a TFT array substrate, an AMOLED display apparatus, and a method for preparing a TFT array substrate. A light conversion layer is arranged on a TFT array substrate, light of three primary colors is emitted by means of combining a monochrome light-emitting layer with the light conversion layer, and incident ambient light is absorbed by means of the light conversion layer. By means of the AMOLED display apparatus of the present invention, the aim of preventing the reflection of ambient light without the need for a polarizer is achieved, the light emission efficiency of an OLED device and the brightness of the AMOLED display apparatus are improved, power consumption is reduced, and costs are also saved.

Description

TFT阵列基板、显示装置和TFT阵列基板的制备方法TFT array substrate, display device and preparation method of TFT array substrate 技术领域technical field
本申请涉及显示技术领域,具体涉及一种TFT阵列基板、采用了该TFT阵列基板的AMOLED显示装置、和该TFT阵列基板的制备方法。The present application relates to the field of display technology, and in particular, to a TFT array substrate, an AMOLED display device using the TFT array substrate, and a preparation method of the TFT array substrate.
背景技术Background technique
有源矩阵有机发光二极管(Active-Matrix Organic Light Emitting Diode, AMOLED)显示装置具有色域范围广、变色反映速率快、能耗低等优点,近年来得到了越来越广泛的应用,但是在使用AMOLED显示装置时,显示面板会反射环境光到人眼,影响显示效果和用户体验。Active-Matrix Organic Light Emitting Diode (AMOLED) display devices have the advantages of wide color gamut, fast color change reflection rate, and low energy consumption. When displaying a device, the display panel will reflect ambient light to human eyes, which affects the display effect and user experience.
为避免环境光的反射,现有技术通常采用增加偏光片的做法,如图1中所示,薄膜晶体管(Thin Film Transistor,TFT)基板10包括衬底100,以及沿出光方向依次设置在沉底100上的发射阳极105、信号线106、和发光层107在TFT基板10上设置一层线偏光片101和四分之一圆偏光片102,当环境光301穿过线偏光片101后,环境光301被过滤成单一方向的线性偏振光302,之后再经过1/4波片的圆偏光片103时,变为相位偏转45°的圆偏光303,圆偏光照射到基板的信号线或者像素开口区域的反射阳极105后被反射回来,再次经过1/4波片的圆偏光片103,这时光线相位变换90°,无法再通过线偏光片302,这样环境光就无法到达人眼,实现了防止环境光被有机发光二极管(Organic Light Emitting Diode,OLED)基板发射到人眼。In order to avoid the reflection of ambient light, the prior art usually adopts the practice of adding polarizers, as shown in FIG. 1 , the thin film transistor (Thin Film Transistor (TFT) substrate 10 includes a substrate 100, an emission anode 105, a signal line 106, and a light-emitting layer 107 that are sequentially arranged on the sink 100 along the light-emitting direction. A layer of linear polarizers 101 and four layers are arranged on the TFT substrate 10 1/4 circular polarizer 102, when ambient light 301 passes through linear polarizer 101, ambient light 301 is filtered into linear polarized light 302 in a single direction, and then passes through circular polarizer 103 of 1/4 wave plate, it becomes It is the circularly polarized light 303 with a phase deflection of 45°. The circularly polarized light irradiates the signal line of the substrate or the reflective anode 105 in the pixel opening area and is reflected back, and passes through the circular polarizer 103 of the 1/4 wave plate again. At this time, the phase of the light is transformed by 90 °, the linear polarizer 302 can no longer be passed through, so that the ambient light cannot reach the human eye, so that the ambient light can be prevented from being emitted to the human eye by the organic light emitting diode (Organic Light Emitting Diode, OLED) substrate.
然而目前偏光片的价格昂贵,并且其透光率只有40%~50%,在过滤环境光的同时也会影响OLED器件发出的光,AMOLED显示装置的亮度会因此降低,OLED器件的发光效率收到了影响,增加了使用时的功耗。However, the current polarizer is expensive, and its light transmittance is only 40%~50%. While filtering the ambient light, it will also affect the light emitted by the OLED device. As a result, the brightness of the AMOLED display device will be reduced, and the luminous efficiency of the OLED device will be reduced. When the impact is reached, the power consumption during use is increased.
技术问题technical problem
现有的OLED器件发光效率低,使用功耗大。The existing OLED devices have low luminous efficiency and high power consumption.
技术解决方案technical solutions
本发明提供一种TFT阵列基板、AMOLED显示装置、和TFT阵列基板的制备方法,通过在TFT阵列基板上设置光转换层,利用单色发光层和光转换层结合的方式发出三原色光,通过光转换层吸收入射的环境光。The invention provides a TFT array substrate, an AMOLED display device, and a preparation method of the TFT array substrate. By arranging a light conversion layer on the TFT array substrate, the monochromatic light-emitting layer and the light conversion layer are combined to emit three primary colors of light, and the light is converted by light. The layer absorbs incident ambient light.
有益效果beneficial effect
采用单色发光层和光转换层结合的方式降低TFT基板对于环境光的反射,通过光转换层吸收入射的环境光,实现了无需偏光片也可防止环境光反射的目的,提高了OLED器件的发光效率和AMOLED显示装置的亮度,降低了AMOLED       显示装置的功耗,同时AMOLED装置也因为去除了偏光片而节约了成本。The combination of the monochromatic light-emitting layer and the light conversion layer is adopted to reduce the reflection of the TFT substrate to ambient light, and the incident ambient light is absorbed by the light conversion layer, so as to achieve the purpose of preventing the reflection of ambient light without a polarizer, and improve the luminescence of the OLED device. Efficiency and brightness of AMOLED display devices, reducing AMOLED The power consumption of the display device, and the AMOLED device also saves costs by eliminating the polarizer.
附图说明Description of drawings
图1为现有技术中的TFT阵列基板剖面示意图;1 is a schematic cross-sectional view of a TFT array substrate in the prior art;
图2为本申请提供的TFT阵列基板剖面示意图;2 is a schematic cross-sectional view of a TFT array substrate provided by the present application;
图3为本申请提供的TFT阵列基板制备方法的流程示意图。FIG. 3 is a schematic flowchart of a method for preparing a TFT array substrate provided by the present application.
本发明的最佳实施方式BEST MODE FOR CARRYING OUT THE INVENTION
在一些实施方案中,如图2中所示,单色发光层201为蓝光OLED,第一单色光为蓝色光,第二单色光为红光,第三单色光为绿光,第一发光区域210发出蓝色光,第一光转换区213为绿光转换区,第二光转换区214为红光转换区,单色发光层201和光转换层203配合,发出红、绿、蓝三原色光。In some embodiments, as shown in FIG. 2, the monochromatic light emitting layer 201 is a blue OLED, the first monochromatic light is blue light, the second monochromatic light is red light, the third monochromatic light is green light, and the third monochromatic light is green light. A light emitting area 210 emits blue light, the first light conversion area 213 is a green light conversion area, and the second light conversion area 214 is a red light conversion area. The monochromatic light emitting layer 201 cooperates with the light conversion layer 203 to emit three primary colors of red, green and blue. Light.
由于环境光经过蓝色OLED时损失较多,采用蓝光OLED作为单色发光层201,可以起到进一步吸收环境光、避免环境光反射的作用;需要说明的是,单色发光层201也可以采用绿光OLED或者红光OLED,当采用红光OLED作为单色发光层201时,对应的光转换层203为绿光转换层和蓝光转换层,当采用绿光OLED作为单色发光层201时,对应的光转换层203为红光转换层和蓝光转换层。Due to the large loss of ambient light when passing through the blue OLED, using the blue OLED as the monochromatic light emitting layer 201 can further absorb the ambient light and avoid the reflection of the ambient light; it should be noted that the monochromatic light emitting layer 201 can also use the Green light OLED or red light OLED, when red light OLED is used as monochromatic light emitting layer 201, the corresponding light conversion layer 203 is green light conversion layer and blue light conversion layer, when green light OLED is used as monochromatic light emitting layer 201, The corresponding light conversion layers 203 are red light conversion layers and blue light conversion layers.
为了进一步加强TFT基板20对于环境光301的吸收,避免环境光反射,参考图2,在一些实施例中,信号线202表面设有有色金属层,用以吸收照射到信号线202表面的环境光301,有色金属层可以采用铬或者含铬合金。In order to further enhance the absorption of the ambient light 301 by the TFT substrate 20 and avoid the reflection of ambient light, referring to FIG. 2 , in some embodiments, a non-ferrous metal layer is provided on the surface of the signal line 202 to absorb the ambient light irradiated on the surface of the signal line 202 301, the non-ferrous metal layer may use chromium or a chromium-containing alloy.
当在TFT基板20中设置了光转换片203以及在信号线202表面设置有色金属层后,大部分照射到TFT基板20上的环境光301可以被吸收掉,但是仍有部分环境光301照射到信号线202以及像素开口区域的反射阳极205后被反射;为了进一步减少环境光301的反射,在一些实施例中,如图2所示,TFT阵列基板20还包括遮光层204,信号线202和遮光层204相对应地设置,信号线202和遮光层204沿出光方向依次设置;环境光301照射到信号线202以及像素开口区域的反射阳极205后被反射,被反射的环境光被遮光层204遮挡,进一步地起到了减少环境光301反射的作用;为了保证良好的遮光效果,遮光层204需要有一定的厚度,其厚度可以为100纳米至150纳米。When the light conversion sheet 203 is arranged in the TFT substrate 20 and the non-ferrous metal layer is arranged on the surface of the signal line 202, most of the ambient light 301 irradiated on the TFT substrate 20 can be absorbed, but some ambient light 301 is still irradiated to The signal line 202 and the reflective anode 205 in the pixel opening area are reflected; in order to further reduce the reflection of the ambient light 301, in some embodiments, as shown in FIG. 2, the TFT array substrate 20 further includes a light shielding layer 204, the signal line 202 and The light-shielding layer 204 is correspondingly arranged, and the signal line 202 and the light-shielding layer 204 are arranged in sequence along the light-emitting direction; the ambient light 301 is reflected after irradiating the signal line 202 and the reflective anode 205 in the pixel opening area, and the reflected ambient light is reflected by the light-shielding layer 204 The shading further reduces the reflection of the ambient light 301; in order to ensure a good shading effect, the shading layer 204 needs to have a certain thickness, and the thickness may be 100 nanometers to 150 nanometers.
在一些实施例中,遮光层204的材料为黑色树脂,可以理解的是,遮光层204也可以采用其它能较好吸收光的材料,例如含铬的合金;当然,遮光层204采用黑色树脂,可以降低显示装置的制造成本。In some embodiments, the material of the light-shielding layer 204 is black resin. It can be understood that the light-shielding layer 204 can also be made of other materials that can better absorb light, such as alloys containing chromium; of course, the light-shielding layer 204 is made of black resin. The manufacturing cost of the display device can be reduced.
为了能使遮光层204能更好地遮挡从信号线202以及像素开口区域的反射阳极205反射回来的环境光,在一些实施例中,遮光层204的宽度大于信号线202的宽度,通过用遮光层204将信号线202覆盖,可以确保从信号线202以及像素开口区域的反射阳极205反射回来的光线能被遮光层204全部遮挡;需要注意的是,遮光层204也不能过宽,如果太宽则会遮挡OLED发出的光,影响显示装置的亮度;在不影响OLED发光的前提下,增加遮光层204的宽度,使其能完全覆盖信号线202,对于减少TFT基板20对于环境光的反射是有利的。In order to enable the light shielding layer 204 to better shield the ambient light reflected from the signal line 202 and the reflective anode 205 in the pixel opening area, in some embodiments, the width of the light shielding layer 204 is greater than the width of the signal line 202. The layer 204 covers the signal line 202, which can ensure that the light reflected from the signal line 202 and the reflective anode 205 in the pixel opening area can be completely blocked by the light shielding layer 204; it should be noted that the light shielding layer 204 can not be too wide, if it is too wide It will block the light emitted by the OLED and affect the brightness of the display device; on the premise of not affecting the light emission of the OLED, increasing the width of the light-shielding layer 204 so that it can completely cover the signal line 202 is to reduce the reflection of the TFT substrate 20 for ambient light. advantageous.
为了使TFT基板20的表面平坦,同时避免空气中的水分和氧气侵蚀到TFT基板20的内部,在一些实施例中,如图2所示,TFT阵列基板20上还包括保护树脂层206,为了防止保护树脂层影响AMOLED显示装置的亮度,保护树脂层的透光率需要大于95%,可以理解的是,保护树脂层的透光率越大,对AMOLED显示装置亮度的影响就越小。In order to make the surface of the TFT substrate 20 flat and prevent moisture and oxygen in the air from eroding into the interior of the TFT substrate 20 , in some embodiments, as shown in FIG. 2 , the TFT array substrate 20 further includes a protective resin layer 206 . To prevent the protective resin layer from affecting the brightness of the AMOLED display device, the light transmittance of the protective resin layer needs to be greater than 95%. It is understandable that the greater the light transmittance of the protective resin layer, the smaller the impact on the brightness of the AMOLED display device.
由于AMOLED显示装置的光出射角度较小,日常使用中在某些特定角度看显示装置时会有眩光的问题,为了防止眩光,在一些实施例中,如图2所示,TFT阵列基板上还贴有两个椭圆偏振片208,椭圆偏振片208可以增加AMOLED    显示装置所发出的光的出射角度,起到防眩光的作用。Due to the small light exit angle of the AMOLED display device, there will be glare problems when viewing the display device at certain angles in daily use. In order to prevent glare, in some embodiments, as shown in FIG. 2 , the TFT array substrate is further Two elliptical polarizers 208 are attached, and the elliptical polarizer 208 can increase AMOLED The exit angle of the light emitted by the display device plays the role of anti-glare.
本申请实施例中还提供一种TFT阵列基板的制备方法,该TFT阵列基板的制备方法包括如下步骤:The embodiment of the present application also provides a method for preparing a TFT array substrate, and the method for preparing the TFT array substrate includes the following steps:
S101、制作用于发射第一单色光的单色发光层201,在单色发光层201不同发光区域之间制作至少一条信号线202。S101 , fabricating a monochromatic light-emitting layer 201 for emitting a first monochromatic light, and fabricating at least one signal line 202 between different light-emitting regions of the monochromatic light-emitting layer 201 .
其中,单色发光层201包括第一发光区域210,第二发光区域211和第三发光区域212。The monochromatic light-emitting layer 201 includes a first light-emitting region 210 , a second light-emitting region 211 and a third light-emitting region 212 .
在本发明实施例中,在TFT阵列基板背板完成后,通过蒸镀方式制作单色发光层201,采用蒸镀方式和传统的FFM(Fine Metal Mask,精细金属掩膜)方式相比成本低廉,并且采用蒸镀方式有助于减少像素间的距离,从而提高AMOLED显示装置的像素(Pixels Per Inch, PPI),使AMOLED显示装置的显示效果更好。In the embodiment of the present invention, after the backplane of the TFT array substrate is completed, the monochromatic light-emitting layer 201 is fabricated by evaporation method, and the evaporation method is cheaper than the traditional FFM (Fine Metal Mask, fine metal mask) method. , and the use of evaporation method helps to reduce the distance between pixels, thereby improving the pixels (Pixels Per Inch, PPI) of the AMOLED display device, so that the display effect of the AMOLED display device is better.
S102、对单色发光层201进行封装,形成封装层207。S102 , encapsulating the monochromatic light-emitting layer 201 to form an encapsulation layer 207 .
在本发明实施例中,通过蒸镀方式形成单色发光层后,采用等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition,PECVD)和喷墨印刷(Ink Jet Printing,IJP)工艺对发光层进行封装,形成封装层207;PECVD是借助微波或射频等使含有薄膜组成原子的气体电离,在局部形成等离子体,而等离子化学活性很强,很容易发生反应,因此能容易地在基片上沉积出所期望的薄膜,采用PECVD工艺可以降低成本,提高产能,并且能提高封装层的均匀性;IJP工艺是通过微米级的打印喷头将材料溶液喷涂到基板上,采用IJP工艺能有效地节省原料,降低成本。In the embodiment of the present invention, after the monochromatic light-emitting layer is formed by evaporation, plasma-enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition) is adopted. Chemical Vapor Deposition, PECVD) and ink jet printing (Ink Jet Printing, IJP) process to encapsulate the light-emitting layer to form the encapsulation layer 207; PECVD is to ionize the gas containing the atoms of the film by means of microwave or radio frequency, etc., to form a plasma locally , and the plasma chemical activity is very strong, it is easy to react, so the desired film can be easily deposited on the substrate, the use of PECVD process can reduce costs, improve productivity, and can improve the uniformity of the packaging layer; IJP process is through micron The high-grade printing nozzle sprays the material solution onto the substrate, and the IJP process can effectively save raw materials and reduce costs.
S103、在封装层207上形成光转换层203。S103 , forming the light conversion layer 203 on the encapsulation layer 207 .
光转换层203包括第一光转换区213和第二光转换区214,第二光转换区214与第三发光区域212对应,第一光转换区213与第二发光区域211对应,第二光转换区214用于将接收的第一单色光转换为第二单色光,第一光转换区213用于将接收的第一单色光转换为第三单色光,第一单色光,第二单色光和第三单色光不同。The light conversion layer 203 includes a first light conversion area 213 and a second light conversion area 214, the second light conversion area 214 corresponds to the third light emitting area 212, the first light conversion area 213 corresponds to the second light emitting area 211, and the second light conversion area 214 corresponds to the third light emitting area 212. The conversion area 214 is used to convert the received first monochromatic light into the second monochromatic light, and the first light conversion area 213 is used to convert the received first monochromatic light into the third monochromatic light, the first monochromatic light , the second monochromatic light and the third monochromatic light are different.
S104、在封装层207上形成光转换层203之后,在至少一条信号线202区域形成遮光层204。S104 , after the light conversion layer 203 is formed on the encapsulation layer 207 , a light shielding layer 204 is formed in the region of at least one signal line 202 .
在本发明的一些实施例中,通过光刻工艺在信号线202走线区域形成遮光层204,可以有效遮挡和吸收从信号线202以及像素开口区域的反射阳极205反射回来的环境光,进一步减少环境光301的反射,遮光层204的材料可采用有色金属铬或者是含铬合金,有色金属铬或含铬合金对光有着良好的吸收作用,遮光层204的材料也可采用黑色树脂,使用黑色树脂比使用含铬金属更加环保,同时成本更低。In some embodiments of the present invention, the light shielding layer 204 is formed in the routing area of the signal line 202 by a photolithography process, which can effectively block and absorb the ambient light reflected from the signal line 202 and the reflective anode 205 in the pixel opening area, further reducing the For the reflection of ambient light 301, the material of the light-shielding layer 204 can be non-ferrous metal chromium or chromium-containing alloy. Non-ferrous metal chromium or chromium-containing alloy has a good absorption effect on light. Resins are more environmentally friendly than using chromium-containing metals, and at the same time cost less.
S105、在所述光转换层和所述遮光层上涂布保护树脂层。S105, coating a protective resin layer on the light conversion layer and the light shielding layer.
在本发明的一些实施例中,为了防止空气和水汽进入TFT基板内部,对其内部元件造成侵蚀,在光转换层203和遮光层204上涂布一层保护树脂层206,保护树脂层206在起到保护TFT基板的同时,也使得TFT基板的表面平整,为了不影响发光层201发出的光,不降低AMOLED显示装置的亮度,保护树脂层206所采用的材料的透光率需要在95%以上,可以理解的是,材料的透光率越高,保护树脂层206对AMOLED显示装置亮度的影响就越小。In some embodiments of the present invention, in order to prevent air and water vapor from entering the interior of the TFT substrate and causing erosion of its internal components, a protective resin layer 206 is coated on the light conversion layer 203 and the light shielding layer 204. While protecting the TFT substrate, it also makes the surface of the TFT substrate flat. In order not to affect the light emitted by the light-emitting layer 201 and not reduce the brightness of the AMOLED display device, the light transmittance of the material used in the protective resin layer 206 needs to be 95%. From the above, it can be understood that the higher the light transmittance of the material, the smaller the influence of the protective resin layer 206 on the brightness of the AMOLED display device.
S106、在所述保护树脂层上贴合两个椭圆偏振片。S106, attaching two elliptically polarizers on the protective resin layer.
在本发明的一些实施例中,为增加AMOLED显示装置所发出光线的出射角,防止对人眼产生眩光,在保护树脂层206之上,采用贴合的方式将两个椭圆偏振片208贴在保护树脂层206上,两个椭圆偏振片208可以增加发光层201所发出光线的出射角度,有效防止眩光。In some embodiments of the present invention, in order to increase the exit angle of the light emitted by the AMOLED display device and prevent glare to the human eye, two elliptically polarizers 208 are pasted on the protective resin layer 206 by a bonding method. On the protective resin layer 206, two elliptical polarizers 208 can increase the exit angle of the light emitted by the light emitting layer 201, thereby effectively preventing glare.
本发明的实施方式Embodiments of the present invention
首先,本申请实施例提供了一种TFT阵列基板,如图2所示,AMOLED显示装置包括TFT阵列基板20,TFT阵列基板20包括衬底200、单色发光层201、信号线202和光转换层203,信号线202设置在单色发光层201之间,单色发光层201和光转换层203沿出光方向依次设置,单色发光层201包括第一发光区域210,第二发光区域211和第三发光区域212,光转换层203包括第一光转换区213和第二光转换区214,第二光转换区214与第三发光区域212对应,第一光转换区213与第二发光区域211对应,第二光转换区214用于将接收的第一单色光转换为第二单色光,第一光转换区213用于将接收的第一单色光转换为第三单色光,所述第一单色光,第二单色光和所述第三单色光不同;单色发光层201所发出的光通过光转换层后会被转换波长,其亮度基本不会有损失,但由于环境光301是白光,环境光301通过光转换层时,光转换层203只会反射其颜色所对应波长的光,其他波长的光会被光转换层203吸收,从而起到减少环境光301反射的作用,另外发光层采用单色器件,也减少了显示装置的制造成本。First, an embodiment of the present application provides a TFT array substrate. As shown in FIG. 2 , the AMOLED display device includes a TFT array substrate 20 , and the TFT array substrate 20 includes a substrate 200 , a monochromatic light-emitting layer 201 , a signal line 202 and a light conversion layer 203, the signal line 202 is arranged between the monochromatic light emitting layers 201, the monochromatic light emitting layer 201 and the light conversion layer 203 are arranged in sequence along the light emitting direction, and the monochromatic light emitting layer 201 includes a first light emitting area 210, a second light emitting area 211 and a third light emitting area 201. In the light emitting area 212, the light conversion layer 203 includes a first light conversion area 213 and a second light conversion area 214, the second light conversion area 214 corresponds to the third light emitting area 212, and the first light conversion area 213 corresponds to the second light emitting area 211 , the second light conversion area 214 is used to convert the received first monochromatic light into the second monochromatic light, and the first light conversion area 213 is used to convert the received first monochromatic light into the third monochromatic light, so The first monochromatic light, the second monochromatic light and the third monochromatic light are different; the light emitted by the monochromatic light-emitting layer 201 will be converted into wavelengths after passing through the light conversion layer, and its brightness will not be lost basically, but Since the ambient light 301 is white light, when the ambient light 301 passes through the light conversion layer, the light conversion layer 203 will only reflect the light of the wavelength corresponding to its color, and the light of other wavelengths will be absorbed by the light conversion layer 203 , thereby reducing the ambient light 301 The effect of reflection, and the use of monochromatic devices for the light-emitting layer also reduces the manufacturing cost of the display device.
本申请实施例中还提供一种TFT阵列基板的制备方法,该TFT阵列基板的制备方法其包括如下步骤:The embodiments of the present application also provide a method for preparing a TFT array substrate, and the method for preparing a TFT array substrate includes the following steps:
制作用于发射第一单色光的单色发光层,所述单色发光层包括第一发光区域,第二发光区域和第三发光区域;making a monochromatic light-emitting layer for emitting first monochromatic light, the monochromatic light-emitting layer comprising a first light-emitting region, a second light-emitting region and a third light-emitting region;
在所述单色发光层不同发光区域之间制作至少一条信号线;Making at least one signal line between different light-emitting regions of the single-color light-emitting layer;
对单色发光层进行封装,形成封装层;Encapsulate the monochromatic light-emitting layer to form an encapsulation layer;
在所述封装层上形成光转换层,所述光转换层包括第一光转换区和第二光转换区,所述第二光转换区与所述第三发光区域对应,所述第一光转换区与所述第二发光区域对应,所述第二光转换区用于将接收的第一单色光转换为第二单色光,所述第一光转换区用于将接收的第一单色光转换为第三单色光,所述第一单色光,第二单色光和所述第三单色光不同。A light conversion layer is formed on the encapsulation layer, the light conversion layer includes a first light conversion area and a second light conversion area, the second light conversion area corresponds to the third light emitting area, the first light conversion area The conversion area corresponds to the second light-emitting area, the second light conversion area is used for converting the received first monochromatic light into the second monochromatic light, and the first light conversion area is used for converting the received first monochromatic light into the second monochromatic light. The monochromatic light is converted into a third monochromatic light, and the first monochromatic light, the second monochromatic light and the third monochromatic light are different.
如图3所示,图3为本申请实施例中TFT阵列基板的制备方法的一个实施例流程图,该方法包括:As shown in FIG. 3 , FIG. 3 is a flowchart of an embodiment of a method for preparing a TFT array substrate in an embodiment of the present application, and the method includes:
S101、制作用于发射第一单色光的单色发光层201,在单色发光层201不同发光区域之间制作至少一条信号线202。S101 , fabricating a monochromatic light-emitting layer 201 for emitting a first monochromatic light, and fabricating at least one signal line 202 between different light-emitting regions of the monochromatic light-emitting layer 201 .
其中,单色发光层201包括第一发光区域210,第二发光区域211和第三发光区域212。The monochromatic light-emitting layer 201 includes a first light-emitting region 210 , a second light-emitting region 211 and a third light-emitting region 212 .
在本发明实施例中,在TFT阵列基板背板完成后,通过蒸镀方式制作单色发光层201,采用蒸镀方式和传统的FFM(Fine Metal Mask,精细金属掩膜)方式相比成本低廉,并且采用蒸镀方式有助于减少像素间的距离,从而提高AMOLED显示装置的像素(Pixels Per Inch, PPI),使AMOLED显示装置的显示效果更好。In the embodiment of the present invention, after the backplane of the TFT array substrate is completed, the monochromatic light-emitting layer 201 is fabricated by evaporation method, and the evaporation method is cheaper than the traditional FFM (Fine Metal Mask, fine metal mask) method. , and the use of evaporation method helps to reduce the distance between pixels, thereby improving the pixels (Pixels Per Inch, PPI) of the AMOLED display device, so that the display effect of the AMOLED display device is better.
S102、对单色发光层201进行封装,形成封装层207。S102 , encapsulating the monochromatic light-emitting layer 201 to form an encapsulation layer 207 .
在本发明实施例中,通过蒸镀方式形成单色发光层后,采用等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition,PECVD)和喷墨印刷(Ink Jet Printing,IJP)工艺对发光层进行封装,形成封装层207;PECVD是借助微波或射频等使含有薄膜组成原子的气体电离,在局部形成等离子体,而等离子化学活性很强,很容易发生反应,因此能容易地在基片上沉积出所期望的薄膜,采用PECVD工艺可以降低成本,提高产能,并且能提高封装层的均匀性;IJP工艺是通过微米级的打印喷头将材料溶液喷涂到基板上,采用IJP工艺能有效地节省原料,降低成本。In the embodiment of the present invention, after the monochromatic light-emitting layer is formed by evaporation, plasma-enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition) is adopted. Chemical Vapor Deposition, PECVD) and ink jet printing (Ink Jet Printing, IJP) process to encapsulate the light-emitting layer to form the encapsulation layer 207; PECVD is to ionize the gas containing the atoms of the film by means of microwave or radio frequency, etc., to form a plasma locally , and the plasma chemical activity is very strong, it is easy to react, so the desired film can be easily deposited on the substrate, the use of PECVD process can reduce costs, improve productivity, and can improve the uniformity of the packaging layer; IJP process is through micron The high-grade printing nozzle sprays the material solution onto the substrate, and the IJP process can effectively save raw materials and reduce costs.
S103、在封装层207上形成光转换层203。S103 , forming the light conversion layer 203 on the encapsulation layer 207 .
光转换层203包括第一光转换区213和第二光转换区214,第二光转换区214与第三发光区域212对应,第一光转换区213与第二发光区域211对应,第二光转换区214用于将接收的第一单色光转换为第二单色光,第一光转换区213用于将接收的第一单色光转换为第三单色光,第一单色光,第二单色光和第三单色光不同。The light conversion layer 203 includes a first light conversion area 213 and a second light conversion area 214, the second light conversion area 214 corresponds to the third light emitting area 212, the first light conversion area 213 corresponds to the second light emitting area 211, and the second light conversion area 214 corresponds to the third light emitting area 212. The conversion area 214 is used to convert the received first monochromatic light into the second monochromatic light, and the first light conversion area 213 is used to convert the received first monochromatic light into the third monochromatic light, the first monochromatic light , the second monochromatic light and the third monochromatic light are different.
工业实用性Industrial Applicability
如图3所示,图3为本申请实施例中TFT阵列基板的制备方法的一个实施例流程图,该方法包括:As shown in FIG. 3 , FIG. 3 is a flowchart of an embodiment of a method for preparing a TFT array substrate in an embodiment of the present application, and the method includes:
S101、制作用于发射第一单色光的单色发光层201,在单色发光层201不同发光区域之间制作至少一条信号线202。S101 , fabricating a monochromatic light-emitting layer 201 for emitting a first monochromatic light, and fabricating at least one signal line 202 between different light-emitting regions of the monochromatic light-emitting layer 201 .
其中,单色发光层201包括第一发光区域210,第二发光区域211和第三发光区域212。The monochromatic light-emitting layer 201 includes a first light-emitting region 210 , a second light-emitting region 211 and a third light-emitting region 212 .
在本发明实施例中,在TFT阵列基板背板完成后,通过蒸镀方式制作单色发光层201,采用蒸镀方式和传统的FFM(Fine Metal Mask,精细金属掩膜)方式相比成本低廉,并且采用蒸镀方式有助于减少像素间的距离,从而提高AMOLED显示装置的像素(Pixels Per Inch, PPI),使AMOLED显示装置的显示效果更好。In the embodiment of the present invention, after the backplane of the TFT array substrate is completed, the monochromatic light-emitting layer 201 is fabricated by evaporation method, and the evaporation method is cheaper than the traditional FFM (Fine Metal Mask, fine metal mask) method. , and the use of evaporation method helps to reduce the distance between pixels, thereby improving the pixels (Pixels Per Inch, PPI) of the AMOLED display device, so that the display effect of the AMOLED display device is better.
S102、对单色发光层201进行封装,形成封装层207。S102 , encapsulating the monochromatic light-emitting layer 201 to form an encapsulation layer 207 .
在本发明实施例中,通过蒸镀方式形成单色发光层后,采用等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition,PECVD)和喷墨印刷(Ink Jet Printing,IJP)工艺对发光层进行封装,形成封装层207;PECVD是借助微波或射频等使含有薄膜组成原子的气体电离,在局部形成等离子体,而等离子化学活性很强,很容易发生反应,因此能容易地在基片上沉积出所期望的薄膜,采用PECVD工艺可以降低成本,提高产能,并且能提高封装层的均匀性;IJP工艺是通过微米级的打印喷头将材料溶液喷涂到基板上,采用IJP工艺能有效地节省原料,降低成本。In the embodiment of the present invention, after the monochromatic light-emitting layer is formed by evaporation, plasma-enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition) is adopted. Chemical Vapor Deposition, PECVD) and ink jet printing (Ink Jet Printing, IJP) process to encapsulate the light-emitting layer to form the encapsulation layer 207; PECVD is to ionize the gas containing the atoms of the film by means of microwave or radio frequency, etc., to form a plasma locally , and the plasma chemical activity is very strong, it is easy to react, so the desired film can be easily deposited on the substrate, the use of PECVD process can reduce costs, improve productivity, and can improve the uniformity of the packaging layer; IJP process is through micron The high-grade printing nozzle sprays the material solution onto the substrate, and the IJP process can effectively save raw materials and reduce costs.
S103、在封装层207上形成光转换层203。S103 , forming the light conversion layer 203 on the encapsulation layer 207 .
光转换层203包括第一光转换区213和第二光转换区214,第二光转换区214与第三发光区域212对应,第一光转换区213与第二发光区域211对应,第二光转换区214用于将接收的第一单色光转换为第二单色光,第一光转换区213用于将接收的第一单色光转换为第三单色光,第一单色光,第二单色光和第三单色光不同。The light conversion layer 203 includes a first light conversion area 213 and a second light conversion area 214, the second light conversion area 214 corresponds to the third light emitting area 212, the first light conversion area 213 corresponds to the second light emitting area 211, and the second light conversion area 214 corresponds to the third light emitting area 212. The conversion area 214 is used to convert the received first monochromatic light into the second monochromatic light, and the first light conversion area 213 is used to convert the received first monochromatic light into the third monochromatic light, the first monochromatic light , the second monochromatic light and the third monochromatic light are different.
在本发明实施例中,对单色发光层201进行封装后,在封装层207上通过打印方式形成光转换层203,光转换层203用以和单色发光层201配合形成红、绿、蓝三原色的光;在实际生产中,为形成光转换层203也可以采用光刻的方式,但是采用光刻方式形成光转换层203,制造难度大,难以进行大规模量产,通过打印方式形成光转换层203,有着制造简单,节省材料的优点;光转换层203的材料可以采用量子点材料,量子点材料是无机材料,具有较宽的吸收光谱和较窄的发射光谱,对于环境白光有着良好的吸收作用,并且能够满足AMOLED显示装置对于高色域的要求。In the embodiment of the present invention, after the monochromatic light emitting layer 201 is encapsulated, the light conversion layer 203 is formed on the encapsulation layer 207 by printing, and the light conversion layer 203 is used to cooperate with the monochromatic light emitting layer 201 to form red, green and blue Three primary colors of light; in actual production, photolithography can also be used to form the light conversion layer 203, but the photolithography method is used to form the light conversion layer 203, which is difficult to manufacture and difficult to mass-produce. The conversion layer 203 has the advantages of being simple to manufacture and saving materials; the material of the light conversion layer 203 can be made of quantum dot material. The quantum dot material is an inorganic material with a wide absorption spectrum and a narrow emission spectrum, which is good for ambient white light. and can meet the requirements of AMOLED display devices for high color gamut.
S104、在封装层207上形成光转换层203之后,在至少一条信号线202区域形成遮光层204。S104 , after the light conversion layer 203 is formed on the encapsulation layer 207 , a light shielding layer 204 is formed in the region of at least one signal line 202 .
在本发明的一些实施例中,通过光刻工艺在信号线202走线区域形成遮光层204,可以有效遮挡和吸收从信号线202以及像素开口区域的反射阳极205反射回来的环境光,进一步减少环境光301的反射,遮光层204的材料可采用有色金属铬或者是含铬合金,有色金属铬或含铬合金对光有着良好的吸收作用,遮光层204的材料也可采用黑色树脂,使用黑色树脂比使用含铬金属更加环保,同时成本更低。In some embodiments of the present invention, the light shielding layer 204 is formed in the routing area of the signal line 202 by a photolithography process, which can effectively block and absorb the ambient light reflected from the signal line 202 and the reflective anode 205 in the pixel opening area, further reducing the For the reflection of ambient light 301, the material of the light-shielding layer 204 can be non-ferrous metal chromium or chromium-containing alloy. Non-ferrous metal chromium or chromium-containing alloy has a good absorption effect on light. Resins are more environmentally friendly than using chromium-containing metals, and at the same time cost less.
S105、在所述光转换层和所述遮光层上涂布保护树脂层。S105, coating a protective resin layer on the light conversion layer and the light shielding layer.
在本发明的一些实施例中,为了防止空气和水汽进入TFT基板内部,对其内部元件造成侵蚀,在光转换层203和遮光层204上涂布一层保护树脂层206,保护树脂层206在起到保护TFT基板的同时,也使得TFT基板的表面平整,为了不影响发光层201发出的光,不降低AMOLED显示装置的亮度,保护树脂层206所采用的材料的透光率需要在95%以上,可以理解的是,材料的透光率越高,保护树脂层206对AMOLED显示装置亮度的影响就越小。In some embodiments of the present invention, in order to prevent air and water vapor from entering the interior of the TFT substrate and causing erosion of its internal components, a protective resin layer 206 is coated on the light conversion layer 203 and the light shielding layer 204. While protecting the TFT substrate, it also makes the surface of the TFT substrate flat. In order not to affect the light emitted by the light-emitting layer 201 and not reduce the brightness of the AMOLED display device, the light transmittance of the material used in the protective resin layer 206 needs to be 95%. From the above, it can be understood that the higher the light transmittance of the material, the smaller the influence of the protective resin layer 206 on the brightness of the AMOLED display device.
S106、在所述保护树脂层上贴合两个椭圆偏振片。S106, attaching two elliptically polarizers on the protective resin layer.
在本发明的一些实施例中,为增加AMOLED显示装置所发出光线的出射角,防止对人眼产生眩光,在保护树脂层206之上,采用贴合的方式将两个椭圆偏振片208贴在保护树脂层206上,两个椭圆偏振片208可以增加发光层201所发出光线的出射角度,有效防止眩光。In some embodiments of the present invention, in order to increase the exit angle of the light emitted by the AMOLED display device and prevent glare to the human eye, two elliptically polarizers 208 are pasted on the protective resin layer 206 by a bonding method. On the protective resin layer 206, two elliptical polarizers 208 can increase the exit angle of the light emitted by the light emitting layer 201, thereby effectively preventing glare.

Claims (20)

  1. 一种TFT阵列基板,其中,所述TFT阵列基板包括用于发射第一单色光的单色发光层、至少一条信号线和光转换层;A TFT array substrate, wherein the TFT array substrate comprises a monochromatic light-emitting layer for emitting a first monochromatic light, at least one signal line and a light conversion layer;
    所述单色发光层和光转换层沿所述单色发光层出光方向依次设置,所述光转换层包括第一光转换区和第二光转换区,所述单色发光层包括第一发光区域,第二发光区域和第三发光区域,所述第二光转换区与所述第三发光区域对应,所述第一光转换区域与所述第二发光区域对应,所述第二光转换区用于将接收的第一单色光转换为第二单色光,所述第一光转换区用于将接收的第一单色光转换为第三单色光,所述第一单色光,第二单色光和所述第三单色光不同;The monochromatic light-emitting layer and the light-conversion layer are arranged in sequence along the light-emitting direction of the monochromatic light-emitting layer, the light-conversion layer includes a first light-conversion area and a second light-conversion area, and the monochromatic light-emitting layer includes a first light-emitting area , a second light emitting area and a third light emitting area, the second light conversion area corresponds to the third light emitting area, the first light conversion area corresponds to the second light emitting area, the second light conversion area used to convert the received first monochromatic light into second monochromatic light, the first light conversion area is used to convert the received first monochromatic light into a third monochromatic light, the first monochromatic light , the second monochromatic light is different from the third monochromatic light;
    所述至少一条信号线设置在所述单色发光层中两个不同发光区域之间。The at least one signal line is disposed between two different light-emitting regions in the single-color light-emitting layer.
  2. 根据权利要求1所述的TFT阵列基板,其中,所述第一单色光为绿色光,所述第二单色光为红色光,所述第三单色光为蓝色光。The TFT array substrate according to claim 1, wherein the first monochromatic light is green light, the second monochromatic light is red light, and the third monochromatic light is blue light.
  3. 根据权利要求1所述的TFT阵列基板,其中,所述第一单色光为红色光,所述第二单色光为绿光,所述第三单色光为蓝色光。The TFT array substrate according to claim 1, wherein the first monochromatic light is red light, the second monochromatic light is green light, and the third monochromatic light is blue light.
  4. 根据权利要求1所述的TFT阵列基板,其中,所述第一单色光为蓝色光,所述第二单色光为红色光,所述第三单色光为绿色光。The TFT array substrate according to claim 1, wherein the first monochromatic light is blue light, the second monochromatic light is red light, and the third monochromatic light is green light.
  5. 根据权利要求4所述的AMOLED显示装置,其中,所述信号线表面设有有色金属层。The AMOLED display device according to claim 4, wherein a non-ferrous metal layer is provided on the surface of the signal line.
  6. 根据权利要求4所述的TFT阵列基板,其中,所述TFT阵列基板还包括遮光层,所述信号线和所述遮光层相对应地设置,所述信号线和所述遮光层沿所述单色发光层的出光方向依次设置。The TFT array substrate according to claim 4, wherein the TFT array substrate further comprises a light shielding layer, the signal lines and the light shielding layer are arranged correspondingly, and the signal lines and the light shielding layer are arranged along the single The light emitting directions of the colored light emitting layers are set in sequence.
  7. 根据权利要求6所述的TFT阵列基板,其中,所述遮光层的材料为黑色树脂。The TFT array substrate according to claim 6, wherein the material of the light shielding layer is black resin.
  8. 根据权利要求6所述的TFT阵列基板,其中,所述遮光层的材料为含铬合金。The TFT array substrate according to claim 6, wherein the material of the light shielding layer is a chromium-containing alloy.
  9. 根据权利要求6所述的TFT阵列基板,其中,所述遮光层的厚度为100~150纳米。The TFT array substrate according to claim 6, wherein the thickness of the light shielding layer is 100-150 nanometers.
  10. 根据权利要求6所述的TFT阵列基板,其中,所述遮光层的宽度大于所述信号线的宽度。The TFT array substrate according to claim 6, wherein the width of the light shielding layer is greater than the width of the signal line.
  11. 根据权利要求1所述的TFT阵列基板,其中,所述TFT阵列基板还包括保护树脂层,所述保护树脂层覆盖所述光转换层,所述保护树脂层的透光率大于95%。The TFT array substrate according to claim 1, wherein the TFT array substrate further comprises a protective resin layer, the protective resin layer covers the light conversion layer, and the light transmittance of the protective resin layer is greater than 95%.
  12. 根据权利要求1所述的TFT阵列基板,其中,所述TFT阵列基板还包括两个椭圆偏振片,所述光转换层和所述椭圆偏振片沿所述单色发光层的出光方向依次设置。The TFT array substrate according to claim 1, wherein the TFT array substrate further comprises two elliptical polarizers, the light conversion layer and the elliptical polarizer are arranged in sequence along the light emitting direction of the monochromatic light emitting layer.
  13. 一种AMOLED显示装置,其中,所述AMOLED显示装置包括TFT阵列基板,所述TFT阵列基板包括用于发射第一单色光的单色发光层、至少一条信号线和光转换层;An AMOLED display device, wherein the AMOLED display device includes a TFT array substrate, and the TFT array substrate includes a monochromatic light-emitting layer for emitting a first monochromatic light, at least one signal line, and a light conversion layer;
    所述单色发光层和光转换层沿所述单色发光层出光方向依次设置,所述光转换层包括第一光转换区和第二光转换区,所述单色发光层包括第一发光区域,第二发光区域和第三发光区域,所述第二光转换区与所述第三发光区域对应,所述第一光转换区域与所述第二发光区域对应,所述第二光转换区用于将接收的第一单色光转换为第二单色光,所述第一光转换区用于将接收的第一单色光转换为第三单色光,所述第一单色光,第二单色光和所述第三单色光不同;The monochromatic light-emitting layer and the light-conversion layer are arranged in sequence along the light-emitting direction of the monochromatic light-emitting layer, the light-conversion layer includes a first light-conversion area and a second light-conversion area, and the monochromatic light-emitting layer includes a first light-emitting area , a second light emitting area and a third light emitting area, the second light conversion area corresponds to the third light emitting area, the first light conversion area corresponds to the second light emitting area, the second light conversion area used to convert the received first monochromatic light into second monochromatic light, the first light conversion area is used to convert the received first monochromatic light into a third monochromatic light, the first monochromatic light , the second monochromatic light is different from the third monochromatic light;
    所述至少一条信号线设置在所述单色发光层中两个不同发光区域之间。The at least one signal line is disposed between two different light-emitting regions in the single-color light-emitting layer.
  14. 根据权利要求13所述的AMOLED显示装置,其中,所述第一单色光为绿色光,所述第二单色光为红色光,所述第三单色光为蓝色光。The AMOLED display device according to claim 13, wherein the first monochromatic light is green light, the second monochromatic light is red light, and the third monochromatic light is blue light.
  15. 根据权利要求13所述的AMOLED显示装置,其中,所述第一单色光为红色光,所述第二单色光为绿光,所述第三单色光为蓝色光。The AMOLED display device according to claim 13, wherein the first monochromatic light is red light, the second monochromatic light is green light, and the third monochromatic light is blue light.
  16. 根据权利要求13所述的AMOLED显示装置,其中,所述第一单色光为蓝色光,所述第二单色光为红色光,所述第三单色光为绿色光。The AMOLED display device according to claim 13, wherein the first monochromatic light is blue light, the second monochromatic light is red light, and the third monochromatic light is green light.
  17. 根据权利要求16所述的AMOLED显示装置,其中,所述信号线表面设有有色金属层。The AMOLED display device according to claim 16, wherein a non-ferrous metal layer is provided on the surface of the signal line.
  18. 根据权利要求16所述的AMOLED显示装置,其中,所述TFT阵列基板还包括遮光层,所述信号线和所述遮光层相对应地设置,所述信号线和所述遮光层沿所述单色发光层的出光方向依次设置。The AMOLED display device according to claim 16, wherein the TFT array substrate further comprises a light shielding layer, the signal lines and the light shielding layer are arranged correspondingly, and the signal lines and the light shielding layer are arranged along the single The light emitting directions of the colored light emitting layers are set in sequence.
  19. 一种TFT阵列基板的制备方法,其中,包括如下步骤:A method for preparing a TFT array substrate, comprising the following steps:
    制作用于发射第一单色光的单色发光层,所述单色发光层包括第一发光区域,第二发光区域和第三发光区域;making a monochromatic light-emitting layer for emitting first monochromatic light, the monochromatic light-emitting layer comprising a first light-emitting region, a second light-emitting region and a third light-emitting region;
    在所述单色发光层不同发光区域之间制作至少一条信号线;Making at least one signal line between different light-emitting regions of the single-color light-emitting layer;
    对单色发光层进行封装,形成封装层;Encapsulate the monochromatic light-emitting layer to form an encapsulation layer;
    在所述封装层上形成光转换层,所述光转换层包括第一光转换区和第二光转换区,所述第二光转换区与所述第三发光区域对应,所述第一光转换区与所述第二发光区域对应,所述第二光转换区用于将接收的第一单色光转换为第二单色光,所述第一光转换区用于将接收的第一单色光转换为第三单色光,所述第一单色光,第二单色光和所述第三单色光不同。A light conversion layer is formed on the encapsulation layer, the light conversion layer includes a first light conversion area and a second light conversion area, the second light conversion area corresponds to the third light emitting area, the first light conversion area The conversion area corresponds to the second light-emitting area, the second light conversion area is used for converting the received first monochromatic light into the second monochromatic light, and the first light conversion area is used for converting the received first monochromatic light into the second monochromatic light. The monochromatic light is converted into a third monochromatic light, and the first monochromatic light, the second monochromatic light and the third monochromatic light are different.
  20. 根据权利要求19所述的方法,其中,在所述封装层上形成光转换层之后,所述方法包括:The method of claim 19, wherein after forming a light conversion layer on the encapsulation layer, the method comprises:
    在所述至少一条信号线区域形成遮光层;forming a light shielding layer on the at least one signal line area;
    在所述光转换层和所述遮光层上涂布保护树脂层;Coating a protective resin layer on the light conversion layer and the light shielding layer;
    在所述保护树脂层上贴合两个椭圆偏振片。Two elliptically polarizing plates are attached on the protective resin layer.
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