WO2022001449A1 - Metal wire grid polarizer and manufacturing method therefor, and display device - Google Patents

Metal wire grid polarizer and manufacturing method therefor, and display device Download PDF

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Publication number
WO2022001449A1
WO2022001449A1 PCT/CN2021/094596 CN2021094596W WO2022001449A1 WO 2022001449 A1 WO2022001449 A1 WO 2022001449A1 CN 2021094596 W CN2021094596 W CN 2021094596W WO 2022001449 A1 WO2022001449 A1 WO 2022001449A1
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Prior art keywords
wire grid
sub
wire
metal
grids
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PCT/CN2021/094596
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French (fr)
Chinese (zh)
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王国强
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京东方科技集团股份有限公司
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/30Polarising elements
    • G02B5/3025Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3058Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/30Polarising elements
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528Polarisers

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a metal wire grid polarizer, a manufacturing method thereof, and a display device.
  • Polarizing devices play a pivotal role in modern optical systems.
  • polarizers are used to reduce the impact of ambient reflected light on the display, and polarizers are added in front of photographic lenses to eliminate reflected light.
  • wire grid polarizers also have good polarization effects when the angle of incident light changes greatly. They are cheap, have good temperature adaptability, and are small in size, making them easy to use in microsystems. . Therefore, wire grid polarizers have advantages that traditional polarizers cannot match.
  • the main methods of making metal wire grid polarizers include: nano-imprint technology, electron beam direct writing exposure technology, X-ray lithography technology and holographic lithography technology.
  • the minimum separation distance between the adjacent two wire grids of the metal wire grid polarizer produced by the above method is relatively large, resulting in a small degree of polarization, which cannot meet the requirements for the degree of polarization of some products.
  • the technical problem to be solved by the present disclosure is to provide a metal wire grid polarizer, a manufacturing method thereof, and a display device, which can manufacture a metal wire grid polarizer with a high degree of polarization.
  • embodiments of the present disclosure provide a method for fabricating a metal wire grid polarizer, including:
  • the first sub-wire grid structure includes a plurality of first sub-wire grids parallel to each other, and the first sub-wire grid adopts a metal material;
  • a metal thin film with a thickness smaller than a first threshold is deposited on the substrate on which the first sub-wire grid structure is formed, and the metal thin film is deposited on the side of the first sub-wire grid away from the substrate to form a plurality of first Two sub-wire grids, the second sub-wire grid and the corresponding first sub-wire grid form a wire grid of the metal wire grid polarizer.
  • the method further includes:
  • the metal thin film on the substrate is etched as a whole, and the metal thin film in the spaced region between the first sub-wire grids is removed, and the etching thickness is smaller than the deposition thickness of the metal thin film.
  • the metal thin film includes: Al, Ag, Cu or Ir thin film.
  • the thickness of the metal thin film is greater than a second threshold, the first threshold is 500 nm, and the second threshold is 30 nm.
  • the deposited thickness of the metal thin film is 40-50 nm.
  • the etch thickness is 25-30 nm.
  • the longitudinal section of the first sub-wire grid perpendicular to its own extension direction is rectangular
  • the profile of the longitudinal section of the second sub-wire grid perpendicular to its own extension direction is a part of an ellipse.
  • the preparing the first sub-wire grid structure on the substrate includes:
  • the first sub-wire grid structure is prepared by using nano-imprinting technology.
  • the depositing a metal thin film with a thickness smaller than a first threshold on the substrate on which the first sub-wire grid structure is formed includes:
  • a layer of metal thin film is covered on the first sub-wire grid structure by sputtering.
  • the first sub-wire grid structure located on the substrate, the first sub-wire grid structure includes a plurality of first sub-wire grids parallel to each other, and the first sub-wire grid adopts a metal material;
  • the second sub-wire grid structure includes a plurality of second sub-wire grids, the second sub-wire grids are in one-to-one correspondence with the first sub-wire grids, each of the second sub-wire grids
  • the wire grid is located on a side of the corresponding first sub-wire grid away from the substrate, and the second sub-wire grid and the corresponding first sub-wire grid form a wire grid of the metal wire grid polarizer.
  • the distance between two adjacent first sub-grids is equal to D1; the minimum distance between two adjacent wire grids is equal to D2, and D2 is smaller than D1.
  • the longitudinal section of the first sub-wire grid perpendicular to its own extension direction is rectangular
  • the profile of the longitudinal section of the second sub-wire grid perpendicular to its own extension direction is a part of an ellipse.
  • the value range of D1 is 50-500 nm, and the value range of D2 is 20-450 nm.
  • An embodiment of the present disclosure is a display device including the metal wire grid polarizer as described above.
  • FIG. 1 is a schematic diagram of forming a first wire grid structure on a substrate according to an embodiment of the present disclosure
  • Fig. 2 is the sectional schematic diagram of Fig. 1 in AA' direction;
  • FIG. 3 is a schematic diagram of forming a second wire grid structure on a substrate according to an embodiment of the present disclosure
  • Fig. 4 is a schematic cross-sectional view in the direction AA' of Fig. 3 .
  • Some display products require the polarization degree of the wire grid polarizer to be greater than 99.986% to meet the contrast requirement. However, the existing process capability is temporarily unable to achieve the polarization degree of the metal wire grid polarizer greater than 99.986%, and the polarization degree uniformity is poor.
  • Some wire grid polarizers have a degree of polarization of only 99%. For example, in the related art, when a metal wire grid polarizer is fabricated by a nano-imprinting process, an embossing glue is formed on a substrate, nano-imprinting is performed to form an embossing glue pattern, a metal film is deposited on the imprinting glue pattern, and the pressure is removed. The rubber pattern is printed to obtain a metal wire grid polarizer. In this solution, the polarization degree of the metal wire grid polarizer can only reach about 99%.
  • a double-layer WGP wire grid polarizer
  • a first layer of metal wire grid is formed on the first surface of the substrate, and then a second layer is formed on the second surface of the substrate.
  • the metal wire grid, double-layer WGP process can increase the polarization degree of the metal wire grid polarizer to more than 99.99%, but the double-layer WGP (wire grid polarizer) process is complicated, the efficiency is low, and the first layer of metal wire The alignment requirements of the grid and the second-layer wire grid are high.
  • the preparation process includes: cleaning the substrate; depositing a metal film, such as an aluminum film, on the substrate; patterning the aluminum film; depositing a layer of SiO; Coating tackifier, IPA isopropyl alcohol and embossing glue in sequence; embossing the embossing glue to form an embossing glue pattern; etching the aluminum film with the embossing glue as a pattern to form the first layer of metal wire grid ; forming a flat layer; forming a buffer layer; depositing a metal film, such as an aluminum film; patterning the aluminum film; depositing a layer of SiO; The embossing glue is embossed to form an embossing glue pattern; the aluminum film is etched with the embossing glue as a pattern to form a second layer of metal wire grids.
  • Embodiments of the present disclosure provide a metal wire grid polarizer, a manufacturing method thereof, and a display device, which can manufacture a metal wire grid polarizer with a high degree of polarization.
  • Embodiments of the present disclosure provide a method for fabricating a metal wire grid polarizer, including:
  • the first sub-wire grid structure includes a plurality of first sub-wire grids parallel to each other, and the first sub-wire grid adopts a metal material;
  • a metal thin film with a thickness smaller than a first threshold is deposited on the substrate on which the first sub-wire grid structure is formed, and the metal thin film is deposited on the side of the first sub-wire grid away from the substrate to form a plurality of first Two sub-wire grids, the second sub-wire grid and the corresponding first sub-wire grid form a wire grid of the metal wire grid polarizer.
  • the degree of polarization is determined by the duty cycle of the wire grid polarizer and the height of the wire grid, where the duty cycle is the ratio of the wire width of the wire grid to the spacing between the wire grids, the wire grid.
  • the duty cycle is the ratio of the wire width of the wire grid to the spacing between the wire grids, the wire grid.
  • the first sub-wire grid structure and the second sub-wire grid structure constitute a metal wire grid polarizer
  • the second sub-wire grid structure is formed on the basis of the first sub-wire grid structure, which increases the height of the wire grid, Therefore, the degree of polarization of the wire grid polarizer can be improved; in this embodiment, the first sub-wire grid structure and the second sub-wire grid structure are fabricated on the same side of the substrate to avoid alignment deviation and ensure the wire grid polarizer.
  • the manufacturing process of this embodiment is simple, the production efficiency is high, and the cost of the metal wire grid polarizer is reduced.
  • the degree of polarization of the wire grid polarizer is further improved.
  • the degree of polarization of the wire grid polarizer can be increased to more than 99.986%, or even more than 99.998%.
  • a small amount of metal may be deposited in the spaced area between the first sub-wire grids, which affects the transmittance of the metal wire grid polarizer.
  • part of the metal thin film is located in the spaced area between the first sub-wire grids.
  • the metal thin film on the substrate needs to be etched as a whole to remove the first sub-wire grid.
  • the metal film in the spaced area between the wire grids can be completely removed by controlling the etching time; since only a small part of the metal is deposited between the first sub-wire grids. Therefore, the thickness of the etching is smaller than the thickness of the metal film.
  • the side of the first sub-wire grid away from the substrate still retains most of the metal film to form the second sub-wire grid.
  • the degree of polarization of the wire grid polarizer is improved under the condition of ensuring the transmittance of the wire grid polarizer.
  • the deposition thickness of the metal film can also be controlled to avoid deposition of the metal film in the spacer regions between the first sub-wire grids, or to reduce the thickness of the metal film deposition in the spacer regions between the first sub-wire grids.
  • the manufacturing method of the metal wire grid polarizer of this embodiment includes the following steps:
  • Step 1 As shown in FIG. 1 and FIG. 2, a first sub-wire grid structure is formed on the substrate 1, and the first sub-wire grid structure includes a plurality of first sub-wire grids 2 parallel to each other;
  • the first sub-wire grid structure may be prepared by using a nanoimprint technology.
  • an imprinting glue is formed on the substrate 1
  • nano-imprinting is performed to form an imprinting glue pattern
  • a metal film is deposited on the imprinting glue pattern
  • the imprinting glue pattern is removed, A first sub-wire grid structure is obtained.
  • the metal film in this step can be made of Al film.
  • the metal film in this step is not limited to the use of Al film, and Ag, Cu or Ir film can also be used .
  • the manufactured first sub-wire grid 2 has a rectangular longitudinal section perpendicular to its own extending direction.
  • the distances between adjacent first sub-grids 2 are all equal to D1.
  • Step 2 As shown in FIG. 3 and FIG. 4 , a metal film is deposited on the first sub-wire grid 2 to form a second sub-wire grid 3 .
  • a metal thin film can be deposited on the first sub-wire grid 2 by a sputtering method, and the sputtering method includes atomic layer deposition technology and magnetron sputtering technology.
  • the first sub-wire grid structure can be covered with a layer of metal thin film by the atomic layer deposition method.
  • this embodiment is not limited to the use of atomic layer deposition to form metal thin films, and magnetron sputtering can also be used to form metal thin films.
  • the metal thin films can be made It is only formed on the first sub-wire grid 2, and will not be deposited on the spaced regions between adjacent first sub-wire grids 2; Deposited to the spacer regions between adjacent first sub-wire grids 2 .
  • the metal film in this step can be made of Al film.
  • the metal film in this step is not limited to the use of Al film, and Ag, Cu or Ir film can also be used .
  • a metal film with a thickness of H may be deposited on the substrate 1 on which the first sub-wire grid structure is formed; when the metal film is deposited by magnetron sputtering, the By controlling the electric and magnetic fields, the metal thin film can be formed only on the first sub-wire grid 2, as shown in FIG.
  • the metal film on the substrate 1 needs to be etched as a whole to remove the space area between the adjacent first sub-wire grids 2.
  • part of the metal film on the top of the first sub-wire grid 2 is also removed, and the etching thickness K is less than H.
  • a second sub-wire grid structure is formed on the side away from the substrate.
  • a sub-wire grid structure, the second sub-wire grid structure includes a plurality of second sub-wire grids 3 parallel to each other, the second sub-wire grids 3 are in one-to-one correspondence with the first sub-wire grids 2, and each second sub-wire grid 2 3 is located on the side of the corresponding first sub-wire grid 2 away from the substrate 1.
  • Each second sub-wire grid 3 and the corresponding first sub-wire grid 2 form a wire grid of a metal wire grid polarizer.
  • the sub-wire grid structure and the second sub-wire grid structure constitute a metal wire grid polarizer. It can be seen from FIG. 4 that the longitudinal section of the first sub-wire grid 2 perpendicular to its own extension direction is rectangular, and the profile of the longitudinal section of the second sub-wire grid 3 perpendicular to its own extension direction is elliptical. part
  • the minimum distance between adjacent second sub-grids 3 is D2, and D2 is smaller than D1.
  • the minimum spacing between adjacent second sub-wire grids 3 also determines the minimum spacing between the wire grids of the metal wire grid polarizer.
  • the degree of polarization of the wire grid polarizer is proportional to the height of the wire grid, and increasing the thickness of the deposited metal film will also increase the degree of polarization of the wire grid polarizer, but if the thickness of the deposited metal film is too large, the adjacent The distance between the two sub-wire grids will be reduced to 0. Therefore, the thickness H of the metal film should be less than 500 nm, which can ensure that there is a certain gap between the adjacent second sub-wire grids.
  • the deposition thickness H of the metal film may be 40-50 nm, and the etching thickness K may be 25-30 nm.
  • the height of the wire grid structure of the metal wire grid polarizer is higher than that of the first sub-wire grid.
  • the height of the wire grid polarizer is about 25nm larger, which can increase the polarization degree of the metal wire grid polarizer to 99.999%.
  • An embodiment of the present disclosure also provides a metal wire grid polarizer, as shown in FIG. 3 and FIG. 4 , including:
  • the first sub-wire grid structure located on the substrate 1, the first sub-wire grid structure includes a plurality of first sub-wire grids 2 parallel to each other, and the first sub-wire grid 2 adopts a metal material;
  • a second sub-wire grid structure includes a plurality of second sub-wire grids 3, the second sub-wire grids 3 are in one-to-one correspondence with the first sub-wire grids 2, each of the The second sub-wire grid 3 is located on the side of the corresponding first sub-wire grid 2 away from the substrate 1 , and the second sub-wire grid 3 and the corresponding first sub-wire grid 2 constitute the metal wire grid polarizer. wire grid.
  • the degree of polarization is determined by the duty cycle of the wire grid polarizer and the height of the wire grid, where the duty cycle is the ratio of the wire width of the wire grid to the spacing between the wire grids, the wire grid.
  • the duty cycle is the ratio of the wire width of the wire grid to the spacing between the wire grids, the wire grid.
  • the first sub-wire grid structure and the second sub-wire grid structure constitute a metal wire grid polarizer
  • the second sub-wire grid structure is formed on the basis of the first sub-wire grid structure, which increases the height of the wire grid, Therefore, the degree of polarization of the wire grid polarizer can be improved; in this embodiment, the first sub-wire grid structure and the second sub-wire grid structure are fabricated on the same side of the substrate to avoid alignment deviation and ensure the wire grid polarizer.
  • the manufacturing process of this embodiment is simple, the production efficiency is high, and the cost of the metal wire grid polarizer is reduced.
  • a first sub-wire grid structure may be prepared on a substrate, and the first sub-wire grid structure includes a plurality of first sub-wire grids parallel to each other; A metal thin film with a thickness smaller than a first threshold is deposited on the substrate of the first sub-wire grid structure, and the metal thin film is deposited on the side of the first sub-wire grid away from the substrate to form a plurality of second sub-wire grids, The second sub-wire grid and the corresponding first sub-wire grid form a wire grid of the metal wire grid polarizer.
  • this embodiment when a metal thin film is deposited on the first sub-wire grid structure, part of the metal will be deposited on the sidewall of the first sub-wire grid, which can increase the width of the wire grid and reduce the distance between two adjacent wire grids , for example, the distance between two adjacent first sub-grids is equal to D1; the minimum distance D2 between two adjacent grids is smaller than D1.
  • this embodiment improves the duty cycle of the wire grid, and further improves the polarization degree of the metal wire grid polarizer.
  • the polarization degree of the metal wire grid polarizer can be increased to more than 99.986%, or even It can reach more than 99.998%.
  • the first sub-wire grid 2 can be made of Al.
  • the first sub-wire grid 2 is not limited to using Al, but also Ag, Cu or Ir;
  • the two sub-wire grids 3 can be made of Al.
  • the second sub-wire grid 3 is not limited to be made of Al, and can also be made of Ag, Cu or Ir.
  • the longitudinal section of the first sub-wire grid 2 in the direction perpendicular to its own extension may be rectangular; the longitudinal section of the second sub-wire grid 3 in the direction perpendicular to its own extension
  • the profile of the cross-section can be a part of an ellipse, a part of the second sub-wire grid 3 is located on the surface of the first sub-wire grid 2 away from the substrate 1, and the other part extends to the sidewall of the first sub-wire grid 2, which is the same as the first sub-wire grid 2.
  • the sub-wire grids together constitute the wire grid of the metal wire grid polarizer.
  • the minimum distance D2 between two adjacent second sub-wire grids 3 is 20-450 nm, that is, the minimum distance between two adjacent wire grids of the metal wire grid polarizer is 20-450 nm.
  • the value range of the distance D1 between the adjacent first sub-wire grids 2 is 50-500 nm. It can be seen that the minimum distance between two adjacent wire grids of the metal wire grid polarizer is smaller than the adjacent first sub-wires The distance D1 between the grids 2 can effectively improve the polarization degree of the wire grid polarizer.
  • the height of the wire grid of the wire grid polarizer can be about 25 nm larger than the height of the first sub-wire grid, and the polarization degree of the wire grid polarizer can be increased to 99.999%, which can meet the needs of various products .
  • Embodiments of the present disclosure also provide a display device including the metal wire grid polarizer as described above.
  • the display device includes but is not limited to: a radio frequency unit, a network module, an audio output unit, an input unit, a sensor, a display unit, a user input unit, an interface unit, a memory, a processor, and a power supply and other components.
  • a radio frequency unit a network module
  • an audio output unit an input unit, a sensor, a display unit, a user input unit, an interface unit, a memory, a processor, and a power supply and other components.
  • the structure of the above-mentioned display device does not constitute a limitation on the display device, and the display device may include more or less components described above, or combine some components, or arrange different components.
  • the display device includes, but is not limited to, a display, a mobile phone, a tablet computer, a television, a wearable electronic device, a navigation display device, and the like.
  • the display device can be any product or component with display function, such as LCD TV, LCD, digital photo frame, mobile phone, tablet computer, etc., wherein the display device also includes a flexible circuit board, a printed circuit board and a backplane.
  • sequence numbers of the steps are not used to limit the sequence of the steps.
  • the sequence of the steps can be changed without creative work. Also within the scope of protection of the present disclosure.

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Abstract

A metal wire grid polarizer and a manufacturing method therefor. The metal wire grid polarizer comprises: a substrate (1); a first sub-wire grid structure located on the substrate (1), the first sub-wire grid structure comprising a plurality of first sub-wire grids (2) parallel to each other, and the first sub-wire grids (2) being made of a metal material; and a second sub-wire grid structure comprising a plurality of second sub-wire grids (3), the second sub-wire grids (3) corresponding one-to-one to the first sub-wire grids (2), each second sub-wire grid (3) being located at the side of the corresponding first sub-wire grid (2) away from the substrate (1), and the second sub-wire grids (3) and the corresponding first sub-wire grids (2) forming a wire grid of the metal wire grid polarizer. The metal wire grid polarizer features a high polarization degree.

Description

金属线栅偏振器及其制作方法、显示装置Wire grid polarizer, method for making the same, and display device
相关申请的交叉引用CROSS-REFERENCE TO RELATED APPLICATIONS
本申请主张在2020年06月29日在中国提交的中国专利申请号No.202010607618.X的优先权,其全部内容通过引用包含于此。This application claims priority to Chinese Patent Application No. 202010607618.X filed in China on Jun. 29, 2020, the entire contents of which are hereby incorporated by reference.
技术领域technical field
本公开涉及显示技术领域,特别是指一种金属线栅偏振器及其制作方法、显示装置。The present disclosure relates to the field of display technology, and in particular, to a metal wire grid polarizer, a manufacturing method thereof, and a display device.
背景技术Background technique
偏振器件在现代光学系统中有着举足轻重的作用,在显示产品中偏振片用来减少环境反射光对显示的影响,摄影镜头前加上偏振镜来消除反射光。Polarizing devices play a pivotal role in modern optical systems. In display products, polarizers are used to reduce the impact of ambient reflected light on the display, and polarizers are added in front of photographic lenses to eliminate reflected light.
而传统的偏振器件,如晶体偏振器尺寸大、价格昂贵且角度入射性能不好。金属光栅是基于金属栅条表面的电子在入射光作用下沿栅条方向自由振荡,在垂直于栅条方向上受限制,从而表现出强烈的偏振特性,可作为偏振器或偏振分束器。相比传统的偏振器件,如偏振片等,金属线栅偏振器在入射光角度变化很大时也有很好的偏振效果,价格便宜,温度适应性好,尺寸很小,便于应用于微系统中。所以,金属线栅偏振器具有传统偏振器件无法比拟的优势。However, traditional polarizers, such as crystal polarizers, are large in size, expensive and have poor angular incidence performance. Metal gratings are based on the fact that electrons on the surface of metal gratings freely oscillate along the direction of the gratings under the action of incident light, and are restricted in the direction perpendicular to the gratings, thus exhibiting strong polarization characteristics and can be used as polarizers or polarization beam splitters. Compared with traditional polarizing devices, such as polarizers, wire grid polarizers also have good polarization effects when the angle of incident light changes greatly. They are cheap, have good temperature adaptability, and are small in size, making them easy to use in microsystems. . Therefore, wire grid polarizers have advantages that traditional polarizers cannot match.
目前制作金属线栅偏振器的主要方法包括:纳米压印技术、电子束直写曝光技术、X射线光刻技术和全息光刻技术。但上述方法制作出的金属线栅偏振器的相邻两线栅之间的最小间隔距离较大,导致偏振度较小,不能满足一些产品对偏振度的需求。At present, the main methods of making metal wire grid polarizers include: nano-imprint technology, electron beam direct writing exposure technology, X-ray lithography technology and holographic lithography technology. However, the minimum separation distance between the adjacent two wire grids of the metal wire grid polarizer produced by the above method is relatively large, resulting in a small degree of polarization, which cannot meet the requirements for the degree of polarization of some products.
发明内容SUMMARY OF THE INVENTION
本公开要解决的技术问题是提供一种金属线栅偏振器及其制作方法、显示装置,能够制备高偏振度的金属线栅偏振器。The technical problem to be solved by the present disclosure is to provide a metal wire grid polarizer, a manufacturing method thereof, and a display device, which can manufacture a metal wire grid polarizer with a high degree of polarization.
为解决上述技术问题,本公开的实施例提供技术方案如下:In order to solve the above-mentioned technical problems, the embodiments of the present disclosure provide the following technical solutions:
一方面,本公开的实施例提供一种金属线栅偏振器的制作方法,包括:In one aspect, embodiments of the present disclosure provide a method for fabricating a metal wire grid polarizer, including:
在基底上制备第一子线栅结构,所述第一子线栅结构包括相互平行的多条第一子线栅,所述第一子线栅采用金属材料;preparing a first sub-wire grid structure on a substrate, the first sub-wire grid structure includes a plurality of first sub-wire grids parallel to each other, and the first sub-wire grid adopts a metal material;
在形成有所述第一子线栅结构的基底上沉积一层厚度小于第一阈值的金属薄膜,所述金属薄膜沉积于所述第一子线栅远离所述基底的一侧形成多条第二子线栅,所述第二子线栅与对应的第一子线栅组成所述金属线栅偏振器的线栅。A metal thin film with a thickness smaller than a first threshold is deposited on the substrate on which the first sub-wire grid structure is formed, and the metal thin film is deposited on the side of the first sub-wire grid away from the substrate to form a plurality of first Two sub-wire grids, the second sub-wire grid and the corresponding first sub-wire grid form a wire grid of the metal wire grid polarizer.
一些实施例中,沉积所述金属薄膜后,部分金属薄膜位于所述第一子线栅之间的间隔区域,所述方法还包括:In some embodiments, after the metal thin film is deposited, a part of the metal thin film is located in the spaced region between the first sub-wire grids, and the method further includes:
对所述基底上的金属薄膜进行整体刻蚀,去除所述第一子线栅之间间隔区域的金属薄膜,刻蚀厚度小于所述金属薄膜的沉积厚度。The metal thin film on the substrate is etched as a whole, and the metal thin film in the spaced region between the first sub-wire grids is removed, and the etching thickness is smaller than the deposition thickness of the metal thin film.
一些实施例中,所述金属薄膜包括:Al、Ag、Cu或Ir薄膜。In some embodiments, the metal thin film includes: Al, Ag, Cu or Ir thin film.
一些实施例中,所述金属薄膜的厚度大于第二阈值,所述第一阈值为500nm,所述第二阈值为30nm。In some embodiments, the thickness of the metal thin film is greater than a second threshold, the first threshold is 500 nm, and the second threshold is 30 nm.
一些实施例中,所述金属薄膜的沉积厚度为40-50nm。In some embodiments, the deposited thickness of the metal thin film is 40-50 nm.
一些实施例中,刻蚀厚度为25-30nm。In some embodiments, the etch thickness is 25-30 nm.
一些实施例中,所述第一子线栅在垂直于自身延伸方向上的纵截面为矩形;In some embodiments, the longitudinal section of the first sub-wire grid perpendicular to its own extension direction is rectangular;
所述第二子线栅在垂直于自身延伸方向上的纵截面的轮廓为椭圆形的一部分。The profile of the longitudinal section of the second sub-wire grid perpendicular to its own extension direction is a part of an ellipse.
一些实施例中,所述在基底上制备第一子线栅结构包括:In some embodiments, the preparing the first sub-wire grid structure on the substrate includes:
采用纳米压印技术制备所述第一子线栅结构。The first sub-wire grid structure is prepared by using nano-imprinting technology.
一些实施例中,所述在形成有所述第一子线栅结构的基底上沉积一层厚度小于第一阈值的金属薄膜包括:In some embodiments, the depositing a metal thin film with a thickness smaller than a first threshold on the substrate on which the first sub-wire grid structure is formed includes:
利用溅射方式在所述第一子线栅结构上覆盖一层金属薄膜。A layer of metal thin film is covered on the first sub-wire grid structure by sputtering.
本公开的实施例提供一种金属线栅偏振器,包括:Embodiments of the present disclosure provide a metal wire grid polarizer comprising:
基底;base;
位于所述基底上的第一子线栅结构,所述第一子线栅结构包括相互平行 的多条第一子线栅,所述第一子线栅采用金属材料;a first sub-wire grid structure located on the substrate, the first sub-wire grid structure includes a plurality of first sub-wire grids parallel to each other, and the first sub-wire grid adopts a metal material;
第二子线栅结构,所述第二子线栅结构包括多条第二子线栅,所述第二子线栅与所述第一子线栅一一对应,每一所述第二子线栅位于对应的第一子线栅远离所述基底的一侧,所述第二子线栅与对应的第一子线栅组成所述金属线栅偏振器的线栅。a second sub-wire grid structure, the second sub-wire grid structure includes a plurality of second sub-wire grids, the second sub-wire grids are in one-to-one correspondence with the first sub-wire grids, each of the second sub-wire grids The wire grid is located on a side of the corresponding first sub-wire grid away from the substrate, and the second sub-wire grid and the corresponding first sub-wire grid form a wire grid of the metal wire grid polarizer.
一些实施例中,相邻两条第一子线栅之间的间距均等于D1;相邻两条线栅之间的最小间距等于D2,D2小于D1。In some embodiments, the distance between two adjacent first sub-grids is equal to D1; the minimum distance between two adjacent wire grids is equal to D2, and D2 is smaller than D1.
一些实施例中,所述第一子线栅在垂直于自身延伸方向上的纵截面为矩形;In some embodiments, the longitudinal section of the first sub-wire grid perpendicular to its own extension direction is rectangular;
所述第二子线栅在垂直于自身延伸方向上的纵截面的轮廓为椭圆形的一部分。The profile of the longitudinal section of the second sub-wire grid perpendicular to its own extension direction is a part of an ellipse.
一些实施例中,D1的取值范围为50-500nm,D2的取值范围为20-450nm。In some embodiments, the value range of D1 is 50-500 nm, and the value range of D2 is 20-450 nm.
本公开的实施例一种显示装置,包括如上所述的金属线栅偏振器。An embodiment of the present disclosure is a display device including the metal wire grid polarizer as described above.
附图说明Description of drawings
图1为本公开实施例在基底上形成第一线栅结构的示意图;FIG. 1 is a schematic diagram of forming a first wire grid structure on a substrate according to an embodiment of the present disclosure;
图2为图1在AA’方向上的截面示意图;Fig. 2 is the sectional schematic diagram of Fig. 1 in AA' direction;
图3为本公开实施例在基底上形成第二线栅结构的示意图;3 is a schematic diagram of forming a second wire grid structure on a substrate according to an embodiment of the present disclosure;
图4为图3在AA’方向上的截面示意图。Fig. 4 is a schematic cross-sectional view in the direction AA' of Fig. 3 .
附图标记reference number
1基底1 base
2第一子线栅2 The first sub-wire grid
3第二子线栅3 Second sub-wire grid
具体实施方式detailed description
为使本公开的实施例要解决的技术问题、技术方案和优点更加清楚,下面将结合附图及具体实施例进行详细描述。In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present disclosure more clear, the following detailed description will be given in conjunction with the accompanying drawings and specific embodiments.
一些显示产品要求金属线栅偏振器的偏振度大于99.986%才能满足对比 度要求,然而现有的工艺能力暂时无法做到金属线栅偏振器的偏振度大于99.986%,而且偏振度均一性较差,部分金属线栅偏振器的偏振度只能达到99%。比如,相关技术中,在采用纳米压印工艺制作金属线栅偏振器时,在基底上形成压印胶,进行纳米压印形成压印胶图形,在压印胶图形上沉积金属薄膜,去除压印胶图形,得到金属线栅偏振器,该种方案中金属线栅偏振器的偏振度只能达到99%左右。Some display products require the polarization degree of the wire grid polarizer to be greater than 99.986% to meet the contrast requirement. However, the existing process capability is temporarily unable to achieve the polarization degree of the metal wire grid polarizer greater than 99.986%, and the polarization degree uniformity is poor. Some wire grid polarizers have a degree of polarization of only 99%. For example, in the related art, when a metal wire grid polarizer is fabricated by a nano-imprinting process, an embossing glue is formed on a substrate, nano-imprinting is performed to form an embossing glue pattern, a metal film is deposited on the imprinting glue pattern, and the pressure is removed. The rubber pattern is printed to obtain a metal wire grid polarizer. In this solution, the polarization degree of the metal wire grid polarizer can only reach about 99%.
为了提高金属线栅偏振器的偏振度,可以采用双层WGP(线栅偏振器)工艺,即在基底的第一表面形成第一层金属线栅,再在基底的第二表面形成第二层金属线栅,双层WGP工艺可以将金属线栅偏振器的偏振度提高到99.99%以上,但双层WGP(线栅偏振器)工艺的制程复杂,效率较低,并且对第一层金属线栅和第二层金属线栅的对位要求高,如果第一层金属线栅和第二层金属线栅的线栅方向存在角度差,会严重影响金属线栅偏振器的透过率,但由于第一层金属线栅和第二层金属线栅形成在基底的不同表面上,对位难免出现偏差。In order to improve the polarization degree of the metal wire grid polarizer, a double-layer WGP (wire grid polarizer) process can be used, that is, a first layer of metal wire grid is formed on the first surface of the substrate, and then a second layer is formed on the second surface of the substrate. The metal wire grid, double-layer WGP process can increase the polarization degree of the metal wire grid polarizer to more than 99.99%, but the double-layer WGP (wire grid polarizer) process is complicated, the efficiency is low, and the first layer of metal wire The alignment requirements of the grid and the second-layer wire grid are high. If there is an angle difference between the wire grid directions of the first-layer wire grid and the second-layer wire grid, it will seriously affect the transmittance of the wire grid polarizer. Since the metal wire grids of the first layer and the metal wire grids of the second layer are formed on different surfaces of the substrate, deviations in alignment are inevitable.
另一种提高偏振度的方式是叠层WGP工艺,制备流程包括:对基底进行清洗;在基底上沉积一层金属薄膜,比如铝薄膜;对铝薄膜进行图形化;沉积一层SiO;在SiO上依次涂覆增粘剂、IPA异丙醇和压印胶;对压印胶进行压印,形成压印胶图形;以压印胶为图形对铝薄膜进行刻蚀,形成第一层金属线栅;形成平坦层;形成缓冲层;沉积一层金属薄膜,比如铝薄膜;对铝薄膜进行图形化;沉积一层SiO;在SiO上依次涂覆增粘剂、IPA异丙醇和压印胶;对压印胶进行压印,形成压印胶图形;以压印胶为图形对铝薄膜进行刻蚀,形成第二层金属线栅。可以看出,叠层WGP工艺的制程复杂,效率较低,并且对金属线栅偏振器的偏振度提升有限。Another way to increase the degree of polarization is the stacked WGP process. The preparation process includes: cleaning the substrate; depositing a metal film, such as an aluminum film, on the substrate; patterning the aluminum film; depositing a layer of SiO; Coating tackifier, IPA isopropyl alcohol and embossing glue in sequence; embossing the embossing glue to form an embossing glue pattern; etching the aluminum film with the embossing glue as a pattern to form the first layer of metal wire grid ; forming a flat layer; forming a buffer layer; depositing a metal film, such as an aluminum film; patterning the aluminum film; depositing a layer of SiO; The embossing glue is embossed to form an embossing glue pattern; the aluminum film is etched with the embossing glue as a pattern to form a second layer of metal wire grids. It can be seen that the process of the stacked WGP process is complex, the efficiency is low, and the polarization degree improvement of the metal wire grid polarizer is limited.
本公开的实施例提供一种金属线栅偏振器及其制作方法、显示装置,能够制备高偏振度的金属线栅偏振器。Embodiments of the present disclosure provide a metal wire grid polarizer, a manufacturing method thereof, and a display device, which can manufacture a metal wire grid polarizer with a high degree of polarization.
本公开的实施例提供一种金属线栅偏振器的制作方法,包括:Embodiments of the present disclosure provide a method for fabricating a metal wire grid polarizer, including:
在基底上制备第一子线栅结构,所述第一子线栅结构包括相互平行的多条第一子线栅,所述第一子线栅采用金属材料;preparing a first sub-wire grid structure on a substrate, the first sub-wire grid structure includes a plurality of first sub-wire grids parallel to each other, and the first sub-wire grid adopts a metal material;
在形成有所述第一子线栅结构的基底上沉积一层厚度小于第一阈值的金 属薄膜,所述金属薄膜沉积于所述第一子线栅远离所述基底的一侧形成多条第二子线栅,所述第二子线栅与对应的第一子线栅组成所述金属线栅偏振器的线栅。A metal thin film with a thickness smaller than a first threshold is deposited on the substrate on which the first sub-wire grid structure is formed, and the metal thin film is deposited on the side of the first sub-wire grid away from the substrate to form a plurality of first Two sub-wire grids, the second sub-wire grid and the corresponding first sub-wire grid form a wire grid of the metal wire grid polarizer.
对于金属线栅偏振器,偏振度由金属线栅偏振器的占空比和线栅的高度决定,其中,占空比为线栅的线宽与线栅之间的间距的比,金属线栅偏振器的占空比越大,则金属线栅偏振器的偏振度越大;线栅的高度越大,则金属线栅偏振器的偏振度越大。For wire grid polarizers, the degree of polarization is determined by the duty cycle of the wire grid polarizer and the height of the wire grid, where the duty cycle is the ratio of the wire width of the wire grid to the spacing between the wire grids, the wire grid The greater the duty cycle of the polarizer, the greater the degree of polarization of the wire grid polarizer; the greater the height of the wire grid, the greater the degree of polarization of the wire grid polarizer.
本实施例中,第一子线栅结构和第二子线栅结构组成金属线栅偏振器,在第一子线栅结构的基础上形成第二子线栅结构,增加了线栅的高度,因此可以提高金属线栅偏振器的偏振度;本实施例中,在基底的同一侧制作第一子线栅结构和第二子线栅结构,避免了对位偏差,保证了金属线栅偏振器的透过率;另外,本实施例的制作流程简单,生产效率高,降低了金属线栅偏振器的成本。再者,本实施例在第一子线栅结构上沉积金属薄膜时,部分金属会沉积在第一子线栅的侧壁,这样可以增加线栅的宽度,提高了线栅的占空比,进一步提高了金属线栅偏振器的偏振度,通过本实施例的技术方案,可以将金属线栅偏振器的偏振度提升至99.986%以上,甚至可以达到99.998%以上。In this embodiment, the first sub-wire grid structure and the second sub-wire grid structure constitute a metal wire grid polarizer, and the second sub-wire grid structure is formed on the basis of the first sub-wire grid structure, which increases the height of the wire grid, Therefore, the degree of polarization of the wire grid polarizer can be improved; in this embodiment, the first sub-wire grid structure and the second sub-wire grid structure are fabricated on the same side of the substrate to avoid alignment deviation and ensure the wire grid polarizer. In addition, the manufacturing process of this embodiment is simple, the production efficiency is high, and the cost of the metal wire grid polarizer is reduced. Furthermore, when a metal film is deposited on the first sub-wire grid structure in this embodiment, part of the metal will be deposited on the sidewall of the first sub-wire grid, so that the width of the wire grid can be increased, and the duty ratio of the wire grid can be improved. The degree of polarization of the wire grid polarizer is further improved. Through the technical solution of this embodiment, the degree of polarization of the wire grid polarizer can be increased to more than 99.986%, or even more than 99.998%.
在第一子线栅结构上沉积金属薄膜时,可能会有一少部分金属沉积到第一子线栅之间的间隔区域,这样对金属线栅偏振器的透过率造成了影响,因此,沉积所述金属薄膜后,部分金属薄膜位于所述第一子线栅之间的间隔区域,在沉积金属薄膜后,还需要对所述基底上的金属薄膜进行整体刻蚀,去除所述第一子线栅之间间隔区域的金属薄膜,通过对刻蚀的时间进行控制可以实现刚好完全去除第一子线栅之间间隔区域的金属薄膜;由于只有一少部分金属沉积到第一子线栅之间的间隔区域,因此刻蚀的厚度小于金属薄膜的厚度,在经过刻蚀后,第一子线栅远离基底的一侧仍然保留了大部分的金属薄膜以形成第二子线栅,这样可以在保证金属线栅偏振器的透过率的情况下提高金属线栅偏振器的偏振度。When a metal thin film is deposited on the first sub-wire grid structure, a small amount of metal may be deposited in the spaced area between the first sub-wire grids, which affects the transmittance of the metal wire grid polarizer. After the metal thin film, part of the metal thin film is located in the spaced area between the first sub-wire grids. After the metal thin film is deposited, the metal thin film on the substrate needs to be etched as a whole to remove the first sub-wire grid. The metal film in the spaced area between the wire grids can be completely removed by controlling the etching time; since only a small part of the metal is deposited between the first sub-wire grids. Therefore, the thickness of the etching is smaller than the thickness of the metal film. After etching, the side of the first sub-wire grid away from the substrate still retains most of the metal film to form the second sub-wire grid. The degree of polarization of the wire grid polarizer is improved under the condition of ensuring the transmittance of the wire grid polarizer.
另外,也可以控制金属薄膜的沉积厚度,避免金属薄膜沉积在第一子线栅之间的间隔区域,或者减少金属薄膜沉积在第一子线栅之间的间隔区域的 厚度。In addition, the deposition thickness of the metal film can also be controlled to avoid deposition of the metal film in the spacer regions between the first sub-wire grids, or to reduce the thickness of the metal film deposition in the spacer regions between the first sub-wire grids.
一具体实施例中,如图1-图4所示,本实施例的金属线栅偏振器的制作方法包括以下步骤:In a specific embodiment, as shown in FIG. 1 to FIG. 4 , the manufacturing method of the metal wire grid polarizer of this embodiment includes the following steps:
步骤1、如图1和图2所示,在基底1上形成第一子线栅结构,所述第一子线栅结构包括相互平行的多条第一子线栅2; Step 1. As shown in FIG. 1 and FIG. 2, a first sub-wire grid structure is formed on the substrate 1, and the first sub-wire grid structure includes a plurality of first sub-wire grids 2 parallel to each other;
具体地,可以采用纳米压印技术制备所述第一子线栅结构。在采用纳米压印工艺制作第一子线栅结构时,在基底1上形成压印胶,进行纳米压印形成压印胶图形,在压印胶图形上沉积金属薄膜,去除压印胶图形,得到第一子线栅结构。Specifically, the first sub-wire grid structure may be prepared by using a nanoimprint technology. When the first sub-wire grid structure is fabricated by the nano-imprinting process, an imprinting glue is formed on the substrate 1, nano-imprinting is performed to form an imprinting glue pattern, a metal film is deposited on the imprinting glue pattern, and the imprinting glue pattern is removed, A first sub-wire grid structure is obtained.
由于采用Al制作线栅具有良好的偏振度,因此,本步骤中的金属薄膜可以采用Al薄膜,当然,本步骤中的金属薄膜并不局限于采用Al薄膜,还可以采用Ag、Cu或Ir薄膜。Since the wire grid made of Al has a good degree of polarization, the metal film in this step can be made of Al film. Of course, the metal film in this step is not limited to the use of Al film, and Ag, Cu or Ir film can also be used .
由图2可以看出,制作出的第一子线栅2在垂直于自身延伸方向上的纵截面为矩形。相邻第一子线栅2之间的距离均等于D1。It can be seen from FIG. 2 that the manufactured first sub-wire grid 2 has a rectangular longitudinal section perpendicular to its own extending direction. The distances between adjacent first sub-grids 2 are all equal to D1.
步骤2、如图3和图4所示,在第一子线栅2上沉积金属薄膜,形成第二子线栅3。Step 2: As shown in FIG. 3 and FIG. 4 , a metal film is deposited on the first sub-wire grid 2 to form a second sub-wire grid 3 .
本实施例中,可以采用溅射方式在第一子线栅2上沉积金属薄膜,溅射方式包括原子层沉积技术和磁控溅射技术。In this embodiment, a metal thin film can be deposited on the first sub-wire grid 2 by a sputtering method, and the sputtering method includes atomic layer deposition technology and magnetron sputtering technology.
原子层沉积技术由于特殊的自限制反应特性,每个沉积周期只沉积一层原子,可以通过控制沉积周期来极为精确的控制沉积薄膜的厚度(0.05nm级别),并且三维覆形性能力很好。因此基于原子层沉积技术优良的三维覆形性和精确的厚度控制能力,本实施例可以利用原子层沉积方式在所述第一子线栅结构上覆盖一层金属薄膜。当然,本实施例并不局限于采用原子层沉积方式形成金属薄膜,还可以采用磁控溅射的方式形成金属薄膜,在磁控溅射中,通过对电场和磁场进行控制,可以使得金属薄膜仅形成在第一子线栅2上,而不会沉积到相邻第一子线栅2之间的间隔区域;或者,大部分形成在第一子线栅2上,仅有极少部分会沉积到相邻第一子线栅2之间的间隔区域。Due to the special self-limiting reaction characteristics of atomic layer deposition technology, only one layer of atoms is deposited in each deposition cycle, and the thickness of the deposited film (0.05nm level) can be extremely precisely controlled by controlling the deposition cycle, and the three-dimensional coverage ability is very good. . Therefore, based on the excellent three-dimensional coverage and precise thickness control capability of the atomic layer deposition technology, in this embodiment, the first sub-wire grid structure can be covered with a layer of metal thin film by the atomic layer deposition method. Of course, this embodiment is not limited to the use of atomic layer deposition to form metal thin films, and magnetron sputtering can also be used to form metal thin films. In magnetron sputtering, by controlling the electric field and the magnetic field, the metal thin films can be made It is only formed on the first sub-wire grid 2, and will not be deposited on the spaced regions between adjacent first sub-wire grids 2; Deposited to the spacer regions between adjacent first sub-wire grids 2 .
由于采用Al制作线栅具有良好的偏振度,因此,本步骤中的金属薄膜可以采用Al薄膜,当然,本步骤中的金属薄膜并不局限于采用Al薄膜,还可 以采用Ag、Cu或Ir薄膜。Since the wire grid made of Al has a good degree of polarization, the metal film in this step can be made of Al film. Of course, the metal film in this step is not limited to the use of Al film, and Ag, Cu or Ir film can also be used .
一具体示例中,如图4所示,可以在形成有所述第一子线栅结构的基底1上沉积一层厚度为H的金属薄膜;在利用磁控溅射技术沉积金属薄膜时,通过对电场和磁场进行控制,可以使得金属薄膜仅形成在第一子线栅2上,如图4所示,在第一子线栅2顶部形成纺锥型结构;如果存在部分金属原子沉积到第一子线栅2之间的间隔区域,为了保证金属线栅偏振器的透过率,需要对基底1上的金属薄膜进行整体刻蚀,去除相邻第一子线栅2之间间隔区域的金属薄膜,同时第一子线栅2顶部的部分金属薄膜也被去除,刻蚀厚度K小于H,在刻蚀后,在所述第一子线栅结构远离所述基底的一侧形成第二子线栅结构,所述第二子线栅结构包括多个相互平行的第二子线栅3,第二子线栅3与第一子线栅2一一对应,每一第二子线栅3位于对应的第一子线栅2远离所述基底1的一侧,每一第二子线栅3与对应的第一子线栅2组成金属线栅偏振器的线栅,所述第一子线栅结构和所述第二子线栅结构组成金属线栅偏振器。由图4可以看出,所述第一子线栅2在垂直于自身延伸方向上的纵截面为矩形,第二子线栅3在垂直于自身延伸方向上的纵截面的轮廓为椭圆形的一部分In a specific example, as shown in FIG. 4 , a metal film with a thickness of H may be deposited on the substrate 1 on which the first sub-wire grid structure is formed; when the metal film is deposited by magnetron sputtering, the By controlling the electric and magnetic fields, the metal thin film can be formed only on the first sub-wire grid 2, as shown in FIG. In the space area between the sub-wire grids 2, in order to ensure the transmittance of the metal wire grid polarizer, the metal film on the substrate 1 needs to be etched as a whole to remove the space area between the adjacent first sub-wire grids 2. At the same time, part of the metal film on the top of the first sub-wire grid 2 is also removed, and the etching thickness K is less than H. After etching, a second sub-wire grid structure is formed on the side away from the substrate. A sub-wire grid structure, the second sub-wire grid structure includes a plurality of second sub-wire grids 3 parallel to each other, the second sub-wire grids 3 are in one-to-one correspondence with the first sub-wire grids 2, and each second sub-wire grid 2 3 is located on the side of the corresponding first sub-wire grid 2 away from the substrate 1. Each second sub-wire grid 3 and the corresponding first sub-wire grid 2 form a wire grid of a metal wire grid polarizer. The sub-wire grid structure and the second sub-wire grid structure constitute a metal wire grid polarizer. It can be seen from FIG. 4 that the longitudinal section of the first sub-wire grid 2 perpendicular to its own extension direction is rectangular, and the profile of the longitudinal section of the second sub-wire grid 3 perpendicular to its own extension direction is elliptical. part
由图4可以看出,相邻第二子线栅3之间的最小间距为D2,D2小于D1。相邻第二子线栅3之间的最小间距也决定了金属线栅偏振器的线栅之间的最小间距。It can be seen from FIG. 4 that the minimum distance between adjacent second sub-grids 3 is D2, and D2 is smaller than D1. The minimum spacing between adjacent second sub-wire grids 3 also determines the minimum spacing between the wire grids of the metal wire grid polarizer.
金属线栅偏振器的偏振度与线栅的高度成正比,增加沉积的金属薄膜的厚度也会增加金属线栅偏振器的偏振度,但如果沉积的金属薄膜的厚度过大,则相邻第二子线栅之间的距离会降低为0,因此,金属薄膜的厚度H应小于500nm,这样可以保证相邻第二子线栅之间存在一定的间隙,具体地,金属薄膜的厚度小于第一阈值,金属薄膜的厚度大于第二阈值,第一阈值可以为500nm,第二阈值可以为30nm。The degree of polarization of the wire grid polarizer is proportional to the height of the wire grid, and increasing the thickness of the deposited metal film will also increase the degree of polarization of the wire grid polarizer, but if the thickness of the deposited metal film is too large, the adjacent The distance between the two sub-wire grids will be reduced to 0. Therefore, the thickness H of the metal film should be less than 500 nm, which can ensure that there is a certain gap between the adjacent second sub-wire grids. A threshold, the thickness of the metal film is greater than the second threshold, the first threshold may be 500 nm, and the second threshold may be 30 nm.
一些实施例中,所述金属薄膜的沉积厚度H可以为40-50nm,刻蚀厚度K可以为25-30nm,在此参数下金属线栅偏振器的线栅结构的高度比第一子线栅的高度大25nm左右,可以将金属线栅偏振器的偏振度提高至99.999%。In some embodiments, the deposition thickness H of the metal film may be 40-50 nm, and the etching thickness K may be 25-30 nm. Under these parameters, the height of the wire grid structure of the metal wire grid polarizer is higher than that of the first sub-wire grid. The height of the wire grid polarizer is about 25nm larger, which can increase the polarization degree of the metal wire grid polarizer to 99.999%.
本公开实施例还提供了一种金属线栅偏振器,如图3、图4所示,包括:An embodiment of the present disclosure also provides a metal wire grid polarizer, as shown in FIG. 3 and FIG. 4 , including:
基底1; base 1;
位于所述基底1上的第一子线栅结构,所述第一子线栅结构包括相互平行的多条第一子线栅2,所述第一子线栅2采用金属材料;a first sub-wire grid structure located on the substrate 1, the first sub-wire grid structure includes a plurality of first sub-wire grids 2 parallel to each other, and the first sub-wire grid 2 adopts a metal material;
第二子线栅结构,所述第二子线栅结构包括多条第二子线栅3,所述第二子线栅3与所述第一子线栅2一一对应,每一所述第二子线栅3位于对应的第一子线栅2远离所述基底1的一侧,所述第二子线栅3与对应的第一子线栅2组成所述金属线栅偏振器的线栅。A second sub-wire grid structure, the second sub-wire grid structure includes a plurality of second sub-wire grids 3, the second sub-wire grids 3 are in one-to-one correspondence with the first sub-wire grids 2, each of the The second sub-wire grid 3 is located on the side of the corresponding first sub-wire grid 2 away from the substrate 1 , and the second sub-wire grid 3 and the corresponding first sub-wire grid 2 constitute the metal wire grid polarizer. wire grid.
对于金属线栅偏振器,偏振度由金属线栅偏振器的占空比和线栅的高度决定,其中,占空比为线栅的线宽与线栅之间的间距的比,金属线栅偏振器的占空比越大,则金属线栅偏振器的偏振度越大;线栅的高度越大,则金属线栅偏振器的偏振度越大。For wire grid polarizers, the degree of polarization is determined by the duty cycle of the wire grid polarizer and the height of the wire grid, where the duty cycle is the ratio of the wire width of the wire grid to the spacing between the wire grids, the wire grid The greater the duty cycle of the polarizer, the greater the degree of polarization of the wire grid polarizer; the greater the height of the wire grid, the greater the degree of polarization of the wire grid polarizer.
本实施例中,第一子线栅结构和第二子线栅结构组成金属线栅偏振器,在第一子线栅结构的基础上形成第二子线栅结构,增加了线栅的高度,因此可以提高金属线栅偏振器的偏振度;本实施例中,在基底的同一侧制作第一子线栅结构和第二子线栅结构,避免了对位偏差,保证了金属线栅偏振器的透过率;另外,本实施例的制作流程简单,生产效率高,降低了金属线栅偏振器的成本。In this embodiment, the first sub-wire grid structure and the second sub-wire grid structure constitute a metal wire grid polarizer, and the second sub-wire grid structure is formed on the basis of the first sub-wire grid structure, which increases the height of the wire grid, Therefore, the degree of polarization of the wire grid polarizer can be improved; in this embodiment, the first sub-wire grid structure and the second sub-wire grid structure are fabricated on the same side of the substrate to avoid alignment deviation and ensure the wire grid polarizer. In addition, the manufacturing process of this embodiment is simple, the production efficiency is high, and the cost of the metal wire grid polarizer is reduced.
在制作本实施例的金属线栅偏振器时,可以在基底上制备第一子线栅结构,所述第一子线栅结构包括相互平行的多条第一子线栅;在形成有所述第一子线栅结构的基底上沉积一层厚度小于第一阈值的金属薄膜,所述金属薄膜沉积于所述第一子线栅远离所述基底的一侧形成多条第二子线栅,所述第二子线栅与对应的第一子线栅组成所述金属线栅偏振器的线栅。When fabricating the metal wire grid polarizer of this embodiment, a first sub-wire grid structure may be prepared on a substrate, and the first sub-wire grid structure includes a plurality of first sub-wire grids parallel to each other; A metal thin film with a thickness smaller than a first threshold is deposited on the substrate of the first sub-wire grid structure, and the metal thin film is deposited on the side of the first sub-wire grid away from the substrate to form a plurality of second sub-wire grids, The second sub-wire grid and the corresponding first sub-wire grid form a wire grid of the metal wire grid polarizer.
本实施例在第一子线栅结构上沉积金属薄膜时,部分金属会沉积在第一子线栅的侧壁,这样可以增加线栅的宽度,减小相邻两条线栅之间的间距,比如相邻两条第一子线栅之间的间距均等于D1;相邻两条线栅之间的最小间距D2小于D1。这样本实施例提高了线栅的占空比,进一步提高了金属线栅偏振器的偏振度,通过本实施例的技术方案,可以将金属线栅偏振器的偏振度提升至99.986%以上,甚至可以达到99.998%以上。In this embodiment, when a metal thin film is deposited on the first sub-wire grid structure, part of the metal will be deposited on the sidewall of the first sub-wire grid, which can increase the width of the wire grid and reduce the distance between two adjacent wire grids , for example, the distance between two adjacent first sub-grids is equal to D1; the minimum distance D2 between two adjacent grids is smaller than D1. In this way, this embodiment improves the duty cycle of the wire grid, and further improves the polarization degree of the metal wire grid polarizer. Through the technical solution of this embodiment, the polarization degree of the metal wire grid polarizer can be increased to more than 99.986%, or even It can reach more than 99.998%.
由于采用Al制作线栅具有良好的偏振度,因此,第一子线栅2可以采用 Al制作,当然,第一子线栅2并不局限于采用Al,还可以采用Ag、Cu或Ir;第二子线栅3可以采用Al制作,当然,第二子线栅3并不局限于采用Al,还可以采用Ag、Cu或Ir。Since the wire grid made of Al has a good degree of polarization, the first sub-wire grid 2 can be made of Al. Of course, the first sub-wire grid 2 is not limited to using Al, but also Ag, Cu or Ir; The two sub-wire grids 3 can be made of Al. Of course, the second sub-wire grid 3 is not limited to be made of Al, and can also be made of Ag, Cu or Ir.
一些实施例中,如图4所示,所述第一子线栅2在垂直于自身延伸方向上的纵截面可以为矩形;所述第二子线栅3在垂直于自身延伸方向上的纵截面的轮廓可以为椭圆形的一部分,第二子线栅3的部分位于第一子线栅2远离基底1一侧的表面,另一部分延伸至第一子线栅2的侧壁,与第一子线栅共同组成金属线栅偏振器的线栅。In some embodiments, as shown in FIG. 4 , the longitudinal section of the first sub-wire grid 2 in the direction perpendicular to its own extension may be rectangular; the longitudinal section of the second sub-wire grid 3 in the direction perpendicular to its own extension The profile of the cross-section can be a part of an ellipse, a part of the second sub-wire grid 3 is located on the surface of the first sub-wire grid 2 away from the substrate 1, and the other part extends to the sidewall of the first sub-wire grid 2, which is the same as the first sub-wire grid 2. The sub-wire grids together constitute the wire grid of the metal wire grid polarizer.
一些实施例中,相邻两条第二子线栅3之间的最小间距D2为20-450nm,也即金属线栅偏振器的相邻两条线栅之间的最小间距为20-450nm。相邻第一子线栅2之间的间距D1的取值范围为50-500nm,可以看出,金属线栅偏振器的相邻两条线栅之间的最小间距小于相邻第一子线栅2之间的间距D1,从而可以有效提升金属线栅偏振器的偏振度。In some embodiments, the minimum distance D2 between two adjacent second sub-wire grids 3 is 20-450 nm, that is, the minimum distance between two adjacent wire grids of the metal wire grid polarizer is 20-450 nm. The value range of the distance D1 between the adjacent first sub-wire grids 2 is 50-500 nm. It can be seen that the minimum distance between two adjacent wire grids of the metal wire grid polarizer is smaller than the adjacent first sub-wires The distance D1 between the grids 2 can effectively improve the polarization degree of the wire grid polarizer.
本实施例中,金属线栅偏振器的线栅的高度可以比第一子线栅的高度大25nm左右,可以将金属线栅偏振器的偏振度提高至99.999%,能够满足多种产品的需求。In this embodiment, the height of the wire grid of the wire grid polarizer can be about 25 nm larger than the height of the first sub-wire grid, and the polarization degree of the wire grid polarizer can be increased to 99.999%, which can meet the needs of various products .
本公开实施例还提供了一种显示装置,包括如上所述的金属线栅偏振器。Embodiments of the present disclosure also provide a display device including the metal wire grid polarizer as described above.
该显示装置包括但不限于:射频单元、网络模块、音频输出单元、输入单元、传感器、显示单元、用户输入单元、接口单元、存储器、处理器、以及电源等部件。本领域技术人员可以理解,上述显示装置的结构并不构成对显示装置的限定,显示装置可以包括上述更多或更少的部件,或者组合某些部件,或者不同的部件布置。在本公开实施例中,显示装置包括但不限于显示器、手机、平板电脑、电视机、可穿戴电子设备、导航显示设备等。The display device includes but is not limited to: a radio frequency unit, a network module, an audio output unit, an input unit, a sensor, a display unit, a user input unit, an interface unit, a memory, a processor, and a power supply and other components. Those skilled in the art can understand that the structure of the above-mentioned display device does not constitute a limitation on the display device, and the display device may include more or less components described above, or combine some components, or arrange different components. In the embodiments of the present disclosure, the display device includes, but is not limited to, a display, a mobile phone, a tablet computer, a television, a wearable electronic device, a navigation display device, and the like.
所述显示装置可以为:液晶电视、液晶显示器、数码相框、手机、平板电脑等任何具有显示功能的产品或部件,其中,所述显示装置还包括柔性电路板、印刷电路板和背板。The display device can be any product or component with display function, such as LCD TV, LCD, digital photo frame, mobile phone, tablet computer, etc., wherein the display device also includes a flexible circuit board, a printed circuit board and a backplane.
在本公开各方法实施例中,所述各步骤的序号并不能用于限定各步骤的先后顺序,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,对各步骤的先后变化也在本公开的保护范围之内。In the method embodiments of the present disclosure, the sequence numbers of the steps are not used to limit the sequence of the steps. For those of ordinary skill in the art, the sequence of the steps can be changed without creative work. Also within the scope of protection of the present disclosure.
需要说明,本说明书中的各个实施例均采用递进的方式描述,各个实施例之间相同相似的部分互相参见即可,每个实施例重点说明的都是与其他实施例的不同之处。尤其,对于实施例而言,由于其基本相似于产品实施例,所以描述得比较简单,相关之处参见产品实施例的部分说明即可。It should be noted that each embodiment in this specification is described in a progressive manner, and the same and similar parts between the various embodiments may be referred to each other, and each embodiment focuses on the differences from other embodiments. Especially, for the embodiment, since it is basically similar to the product embodiment, the description is relatively simple, and the relevant part may refer to the partial description of the product embodiment.
除非另外定义,本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接,而是可以包括电性的连接,不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系,当被描述对象的绝对位置改变后,则该相对位置关系也可能相应地改变。Unless otherwise defined, technical or scientific terms used in this disclosure shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. As used in this disclosure, "first," "second," and similar terms do not denote any order, quantity, or importance, but are merely used to distinguish the various components. "Comprises" or "comprising" and similar words mean that the elements or things appearing before the word encompass the elements or things recited after the word and their equivalents, but do not exclude other elements or things. Words like "connected" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "Down", "Left", "Right", etc. are only used to represent the relative positional relationship, and when the absolute position of the described object changes, the relative positional relationship may also change accordingly.
可以理解,当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时,该元件可以“直接”位于另一元件“上”或“下”,或者可以存在中间元件。It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element, Or intermediate elements may be present.
在上述实施方式的描述中,具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。In the foregoing description of the embodiments, the particular features, structures, materials or characteristics may be combined in any suitable manner in any one or more of the embodiments or examples.
以上所述,仅为本公开的具体实施方式,但本公开的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本公开揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本公开的保护范围之内。因此,本公开的保护范围应以所述权利要求的保护范围为准。The above are only specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited to this. should be included within the scope of protection of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims (14)

  1. 一种金属线栅偏振器的制作方法,其特征在于,包括:A method for making a wire grid polarizer, comprising:
    在基底上制备第一子线栅结构,所述第一子线栅结构包括相互平行的多条第一子线栅,所述第一子线栅采用金属材料;preparing a first sub-wire grid structure on a substrate, the first sub-wire grid structure includes a plurality of first sub-wire grids parallel to each other, and the first sub-wire grid adopts a metal material;
    在形成有所述第一子线栅结构的基底上沉积一层厚度小于第一阈值的金属薄膜,所述金属薄膜沉积于所述第一子线栅远离所述基底的一侧形成多条第二子线栅,所述第二子线栅与对应的第一子线栅组成所述金属线栅偏振器的线栅。A metal thin film with a thickness smaller than a first threshold is deposited on the substrate on which the first sub-wire grid structure is formed, and the metal thin film is deposited on the side of the first sub-wire grid away from the substrate to form a plurality of first Two sub-wire grids, the second sub-wire grid and the corresponding first sub-wire grid form a wire grid of the metal wire grid polarizer.
  2. 根据权利要求1所述的金属线栅偏振器的制作方法,其特征在于,沉积所述金属薄膜后,部分金属薄膜位于所述第一子线栅之间的间隔区域,所述方法还包括:The method for fabricating a metal wire grid polarizer according to claim 1, wherein after depositing the metal thin film, part of the metal thin film is located in a spaced region between the first sub-wire grids, and the method further comprises:
    对所述基底上的金属薄膜进行整体刻蚀,去除所述第一子线栅之间间隔区域的金属薄膜,刻蚀厚度小于所述金属薄膜的沉积厚度。The metal thin film on the substrate is etched as a whole, and the metal thin film in the spaced region between the first sub-wire grids is removed, and the etching thickness is smaller than the deposition thickness of the metal thin film.
  3. 根据权利要求1所述的金属线栅偏振器的制作方法,其特征在于,所述金属薄膜包括:Al、Ag、Cu或Ir薄膜。The method for manufacturing a metal wire grid polarizer according to claim 1, wherein the metal thin film comprises: Al, Ag, Cu or Ir thin film.
  4. 根据权利要求1所述的金属线栅偏振器的制作方法,其特征在于,所述金属薄膜的厚度大于第二阈值,所述第一阈值为500nm,所述第二阈值为30nm。The method for manufacturing a metal wire grid polarizer according to claim 1, wherein the thickness of the metal thin film is greater than a second threshold, the first threshold is 500 nm, and the second threshold is 30 nm.
  5. 根据权利要求2所述的金属线栅偏振器的制作方法,其特征在于,所述金属薄膜的沉积厚度为40-50nm。The method for manufacturing a metal wire grid polarizer according to claim 2, wherein the deposition thickness of the metal thin film is 40-50 nm.
  6. 根据权利要求5所述的金属线栅偏振器的制作方法,其特征在于,刻蚀厚度为25-30nm。The method for manufacturing a metal wire grid polarizer according to claim 5, wherein the etching thickness is 25-30 nm.
  7. 根据权利要求1所述的金属线栅偏振器的制作方法,其特征在于,The method for manufacturing a wire grid polarizer according to claim 1, wherein,
    所述第一子线栅在垂直于自身延伸方向上的纵截面为矩形;The longitudinal section of the first sub-wire grid perpendicular to its own extension direction is rectangular;
    所述第二子线栅在垂直于自身延伸方向上的纵截面的轮廓为椭圆形的一部分。The profile of the longitudinal section of the second sub-wire grid perpendicular to its own extension direction is a part of an ellipse.
  8. 根据权利要求1所述的金属线栅偏振器的制作方法,其特征在于,所 述在基底上制备第一子线栅结构包括:The method for making a metal wire grid polarizer according to claim 1, wherein the preparing the first sub-wire grid structure on the substrate comprises:
    采用纳米压印技术制备所述第一子线栅结构。The first sub-wire grid structure is prepared by using nano-imprinting technology.
  9. 根据权利要求1所述的金属线栅偏振器的制作方法,其特征在于,所述在形成有所述第一子线栅结构的基底上沉积一层厚度小于第一阈值的金属薄膜包括:The method for manufacturing a metal wire grid polarizer according to claim 1, wherein the depositing a metal thin film with a thickness smaller than a first threshold on the substrate on which the first sub-wire grid structure is formed comprises:
    利用溅射方式在所述第一子线栅结构上覆盖一层金属薄膜。A layer of metal thin film is covered on the first sub-wire grid structure by sputtering.
  10. 一种金属线栅偏振器,其特征在于,包括:A metal wire grid polarizer, comprising:
    基底;base;
    位于所述基底上的第一子线栅结构,所述第一子线栅结构包括相互平行的多条第一子线栅,所述第一子线栅采用金属材料;a first sub-wire grid structure located on the substrate, the first sub-wire grid structure includes a plurality of first sub-wire grids parallel to each other, and the first sub-wire grid adopts a metal material;
    第二子线栅结构,所述第二子线栅结构包括多条第二子线栅,所述第二子线栅与所述第一子线栅一一对应,每一所述第二子线栅位于对应的第一子线栅远离所述基底的一侧,所述第二子线栅与对应的第一子线栅组成所述金属线栅偏振器的线栅。a second sub-wire grid structure, the second sub-wire grid structure includes a plurality of second sub-wire grids, the second sub-wire grids are in one-to-one correspondence with the first sub-wire grids, each of the second sub-wire grids The wire grid is located on a side of the corresponding first sub-wire grid away from the substrate, and the second sub-wire grid and the corresponding first sub-wire grid form a wire grid of the metal wire grid polarizer.
  11. 根据权利要求10所述的金属线栅偏振器,其特征在于,相邻两条第一子线栅之间的间距均等于D1;相邻两条线栅之间的最小间距等于D2,D2小于D1。The metal wire grid polarizer according to claim 10, wherein the distance between two adjacent first sub-wire grids is equal to D1; the minimum distance between two adjacent wire grids is equal to D2, and D2 is less than D1.
  12. 根据权利要求10所述的金属线栅偏振器,其特征在于,The wire grid polarizer of claim 10, wherein:
    所述第一子线栅在垂直于自身延伸方向上的纵截面为矩形;The longitudinal section of the first sub-wire grid perpendicular to its own extension direction is rectangular;
    所述第二子线栅在垂直于自身延伸方向上的纵截面的轮廓为椭圆形的一部分。The profile of the longitudinal section of the second sub-wire grid perpendicular to its own extension direction is a part of an ellipse.
  13. 根据权利要求11所述的金属线栅偏振器,其特征在于,D1的取值范围为50-500nm,D2的取值范围为20-450nm。The metal wire grid polarizer according to claim 11, wherein the value range of D1 is 50-500 nm, and the value range of D2 is 20-450 nm.
  14. 一种显示装置,其特征在于,包括如权利要求10-13中任一项所述的金属线栅偏振器。A display device, characterized by comprising the metal wire grid polarizer according to any one of claims 10-13.
PCT/CN2021/094596 2020-06-29 2021-05-19 Metal wire grid polarizer and manufacturing method therefor, and display device WO2022001449A1 (en)

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