WO2021259241A1 - 硅基有机电致发光显示基板及其制作方法、显示面板 - Google Patents
硅基有机电致发光显示基板及其制作方法、显示面板 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 93
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 81
- 239000010703 silicon Substances 0.000 title claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 80
- 239000002184 metal Substances 0.000 claims abstract description 80
- 239000002131 composite material Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 55
- 239000004065 semiconductor Substances 0.000 claims description 32
- 230000003287 optical effect Effects 0.000 claims description 20
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 17
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000003575 carbonaceous material Substances 0.000 claims description 11
- 238000005401 electroluminescence Methods 0.000 claims description 9
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 claims description 5
- 239000005953 Magnesium phosphide Substances 0.000 claims description 4
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 3
- 239000004917 carbon fiber Substances 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 229910021392 nanocarbon Inorganic materials 0.000 claims description 3
- FQHFBFXXYOQXMN-UHFFFAOYSA-M lithium;quinolin-8-olate Chemical compound [Li+].C1=CN=C2C([O-])=CC=CC2=C1 FQHFBFXXYOQXMN-UHFFFAOYSA-M 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 133
- 238000010586 diagram Methods 0.000 description 14
- 238000002834 transmittance Methods 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 10
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- MCSXGCZMEPXKIW-UHFFFAOYSA-N 3-hydroxy-4-[(4-methyl-2-nitrophenyl)diazenyl]-N-(3-nitrophenyl)naphthalene-2-carboxamide Chemical compound Cc1ccc(N=Nc2c(O)c(cc3ccccc23)C(=O)Nc2cccc(c2)[N+]([O-])=O)c(c1)[N+]([O-])=O MCSXGCZMEPXKIW-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- IMKMFBIYHXBKRX-UHFFFAOYSA-M lithium;quinoline-2-carboxylate Chemical compound [Li+].C1=CC=CC2=NC(C(=O)[O-])=CC=C21 IMKMFBIYHXBKRX-UHFFFAOYSA-M 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/877—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Definitions
- the present disclosure relates to the field of display technology, and in particular, to a silicon-based organic electroluminescence display substrate, a manufacturing method thereof, and a display panel.
- the basic structure of an organic light emitting diode or organic light emitting diode (OLED) device includes a cathode, an anode, and an organic electroluminescent material between the cathode and the anode.
- OLED organic light emitting diode
- One of the cathode and anode of the OLED device must be transparent/translucent in the visible light region. After the OLED device is biased, electrons and holes are injected into the light-emitting layer from the cathode and the anode respectively. Electrons and holes form excitons in the light-emitting layer, and the excitons are excited state electrons. The excitons recombine in the light-emitting layer and release energy in the form of light.
- a silicon-based organic electroluminescence display substrate including a silicon-based substrate and a plurality of pixel units on the silicon-based substrate, wherein each of the plurality of pixel units It includes: a first electrode located on one side of the silicon-based substrate; a light-emitting layer located on a side of the first electrode away from the silicon-based substrate; and a second electrode located on the light-emitting layer away from the silicon-based substrate.
- the second electrode of at least one of the plurality of pixel units includes at least one set of the following composite structure: a first metal film layer, which is located on the light-emitting layer away from the One side of the first electrode; a conductive scattering substructure, which is located on the side of the first metal film layer away from the light emitting layer; and a second metal film layer, which is located on the conductive scattering substructure away from the first One side of the metal film layer.
- the first electrode is a reflective electrode
- the second electrode is a transmissive electrode
- the thickness of the second electrode in a direction perpendicular to the silicon-based substrate is in the range of 12 nm to 20 nm
- the conductive scattering substructure includes a conductive scattering film layer.
- the thickness of the conductive scattering film layer in a direction perpendicular to the silicon-based substrate is in a range of 2 nm to 7 nm.
- the conductive scattering substructure includes a plurality of conductive scattering blocks.
- the thickness of the plurality of conductive scattering blocks in a direction perpendicular to the silicon-based substrate is in a range of 5 nm to 20 nm.
- the sum of the area of the orthographic projection of the plurality of conductive scattering blocks in the direction perpendicular to the silicon-based substrate is the sum of the orthographic projection of the first electrode in the direction perpendicular to the silicon-based substrate 30% to 70% of the area.
- the orthographic projections of the plurality of conductive scattering blocks in a direction perpendicular to the silicon-based substrate are uniformly distributed on the silicon-based substrate.
- the shape of the orthographic projection of the plurality of conductive scattering blocks in the direction perpendicular to the silicon-based substrate is the same, and is the same as the orthographic projection of the first electrode in the direction perpendicular to the silicon-based substrate The shape is the same.
- the carrier mobility of the material of the conductive scattering substructure is within the following range of 10 -4 cm 2 V -1 s -1 to 10 cm 2 V -1 s -1 , and the conductive scatterer
- the optical energy gap of the material of the structure is greater than 2.5 eV.
- the material of the conductive scattering substructure includes an organic semiconductor material and an inorganic semiconductor material, or a doped inorganic semiconductor material and a doped organic semiconductor material.
- the organic semiconductor material includes 8-hydroxyquinoline aluminum, bathophenanthroline, and 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline.
- the inorganic semiconductor material includes a carbon material
- the carbon material includes at least one of graphene, a nanocarbon material, a carbon fiber, and a carbon material.
- the doping material in the doped inorganic semiconductor material and the doped organic semiconductor material includes lithium fluoride, lithium 8-quinolinolate, lithium, magnesium phosphide, magnesium fluoride, and aluminum oxide. At least one.
- the material of the first metal film layer and the second metal film layer includes at least one of a magnesium-silver alloy and a silver alloy.
- a display panel including the above-mentioned display substrate and a driving circuit for driving the display substrate.
- a method for manufacturing the above-mentioned silicon-based organic electroluminescence display substrate including: providing a silicon-based substrate; forming a first electrode on the silicon-based substrate; A light-emitting layer is formed on the side of the first electrode away from the silicon-based substrate, and a second electrode is formed on the side of the light-emitting layer away from the first electrode, so that the second electrode includes at least one of the following Composite structure: a first metal film layer, which is located on the side of the light-emitting layer away from the first electrode; a conductive scattering sub-structure, which is located on the side of the first metal film layer away from the light-emitting layer; and Two metal film layers are located on the side of the conductive scattering substructure away from the first metal film layer.
- forming the second electrode includes: forming a first metal film layer on the light-emitting layer; forming a conductive scattering film layer on the first metal film layer; and forming a conductive scattering film layer on the conductive scattering film layer.
- a second metal film layer is formed thereon.
- forming the second electrode includes: forming a first metal film layer on the light-emitting layer; forming a conductive scattering layer on the first metal film layer, and patterning the conductive scattering layer Processing to form a plurality of conductive scattering blocks in an island shape; and forming a second metal film layer covering the plurality of conductive scattering blocks on the conductive scattering blocks.
- FIG. 1A is a schematic structural diagram of an OLED device according to an embodiment of the present disclosure.
- FIG. 1B is a schematic structural diagram of an OLED device according to an embodiment of the present disclosure.
- FIG. 2 is a schematic structural diagram of a silicon-based OLED display substrate according to an embodiment of the present disclosure
- FIG. 3 is a schematic structural diagram of a silicon-based OLED display substrate according to an embodiment of the present disclosure
- FIG. 4 is a schematic diagram of the light path of the OLED device of the present disclosure and the OLED device in the related art;
- FIG. 5 is a schematic diagram showing the comparison of the light transmittance of the OLED device of the present disclosure and the OLED device in the related art
- Fig. 6 is a production flow chart of a silicon-based OLED display substrate according to an embodiment of the present disclosure
- Fig. 7 is a production flow chart of a second electrode according to an embodiment of the present disclosure.
- Fig. 8 is a production flow chart of a second electrode according to an embodiment of the present disclosure.
- FIG. 9A is a schematic diagram of the arrangement of a plurality of conductive scattering blocks according to an embodiment of the present disclosure.
- FIG. 9B is a schematic diagram of the arrangement of a plurality of conductive scattering blocks according to an embodiment of the present disclosure.
- Ways to control the light color of OLED devices include adjusting the light-emitting characteristics of light-emitting materials, using electrode reflectivity modulation and resonant cavity length (device thickness adjustment) to achieve optical gain control (Fabry-Pérot resonance mechanism).
- the Fabry-Pérot resonance mechanism can be used to increase the luminous purity to the degree close to monochromatic light (single wavelength or narrow FWHM).
- the strong resonant cavity achieved by the Fabry-Pérot resonance mechanism is consistent with the light color of the application, such as the high color purity blue, green and red primary colors required by the display application or the deep red of car taillights
- the light color gamut can be achieved by using luminescent materials of various colors with the Fabry-Pérot resonance mechanism.
- a variety of light-emitting materials can be used in an OLED device to adjust the color of the light-emitting light.
- the strength of the Fabry-Pérot resonance mechanism can also be used to adjust the overall light color.
- the key elements to realize the Fabry-Pérot resonance mechanism in OLED devices include: high-reflectivity reflective electrodes, semi-transmissive electrodes and optical resonant cavity.
- the high reflectivity electrode usually uses metal materials such as silver or its alloy, aluminum or its alloy as the reflecting surface, and the outer surface of the high-transmittance metal oxide is used as the metal protective layer.
- the injection work function of the reflecting electrode is adjusted to match the OLED device use.
- the semi-penetrating electrode is usually coated with a thin metal layer such as silver, magnesium-silver alloy or a combination thereof, and the penetration can be adjusted between 15% and 60% at a thickness of 8 nm to 20 nm.
- Low-transmittance electrodes can get a strong Fabry-Pérot resonance mechanism, and then get the required pure color light, but the total light intensity may be reduced as a result; high-penetration electrodes can get a stronger light intensity spectrum, but the Fabry-Pérot resonance mechanism effect decline.
- a conductive metal oxide can be used to improve its conductivity and maintain the optical effect.
- the optical resonant cavity starts from the transparent electrode on the anode surface and ends at the junction of the cathode metal and the OLED functional material. After considering various optical influence factors, an appropriate OLED device structure is configured.
- FIG. 1A is a schematic structural diagram of an OLED device in a pixel unit on a silicon-based organic electroluminescence display substrate according to an embodiment of the present disclosure.
- FIG. 1B is a schematic structural diagram of an OLED device according to another embodiment of the present disclosure.
- the silicon-based organic electroluminescence display substrate includes a silicon-based substrate and a plurality of pixel units on the silicon-based substrate. Each of the plurality of pixel units includes an OLED device. As shown in FIGS.
- the OLED device includes: a first electrode 61, which serves as a reflective electrode and is located on a side of the silicon-based substrate; a light-emitting layer 62, which is located on a side of the first electrode 61 away from the silicon-based substrate; And the second electrode 63, which serves as a transmissive electrode, is located on the side of the light-emitting layer 62 away from the first electrode 61.
- the second electrode of at least one of the plurality of pixel units includes at least one set of composite structures as follows: the first metal film layer 631 is located on the side of the light emitting layer 62 away from the first electrode 61; the conductive scattering substructure is located on the first electrode 61 A metal film layer 631 is on a side away from the light emitting layer 62; and a second metal film layer 633 is located on a side of the conductive scattering substructure away from the first metal film layer 631.
- the conductive scattering substructure may include different structures, for example, a conductive scattering film layer covering the entire first metal film layer 631, or a plurality of conductive scattering blocks located between the first metal film layer and the second metal film layer. The conductive scattering substructure will be described in detail below in combination with these two specific structures.
- the second electrode 63 includes at least one set of the following composite structures: a first metal film layer 631, which is located on the side of the light-emitting layer 62 away from the first electrode 61; a conductive scattering film layer 634, which is located on the first electrode 61 The side of the metal film layer 631 away from the light emitting layer 62; and the second metal film layer 633, which is located on the side of the conductive scattering film layer 634 away from the first metal film layer 631.
- the second electrode 63 includes at least one set of composite structures as follows: a first metal film layer 631, which is located on the side of the light emitting layer 62 away from the first electrode 61; a plurality of conductive scattering blocks 632, which are located on the first electrode 61 One side of the metal film layer 631 away from the light emitting layer 62; and the second metal film layer 633, which is located on the side of the plurality of conductive scattering blocks 632 away from the first metal film layer 631.
- the second electrode 63 of the OLED device adopts a two-layer metal film structure, and a plurality of conductive scattering blocks or a conductive scattering film layer are embedded between the two metal film layers to form one or more metal layers.
- the composite structure of conductive material-metal can effectively maintain the conductive characteristics of the second electrode, and at the same time improve the optical characteristics of the electrode, thereby effectively improving the light-emitting performance of the OLED device.
- the second electrode 63 may include a plurality of composite structures stacked in a direction perpendicular to the silicon-based substrate.
- the thickness of the electrode used in the top-emitting optical resonant cavity is in the range of 8 nm to 12 nm, and the optical transmittance can be adjusted to be in the range of about 40% to 60%.
- the electrodes suitable for OLED devices are basically within the range of 12nm ⁇ 20nm to ensure normal electrode conduction characteristics, but the optical transmittance falls below 40%, or even less than 10%, which obviously affects the final light output. performance.
- the second electrode 63 with at least one composite structure of the present disclosure when its total thickness falls between 12nm and 20nm, due to the transparent conductive scattering film layer 634 or the plurality of conductive scattering blocks 632, the light The transmittance is greater than the light transmittance of the metal film layer of the same thickness. Moreover, since the transparent conductive scattering film layer 634 or the plurality of conductive scattering blocks 632 have electrical conductivity, the conductivity of the OLED device can be ensured.
- the distance between the first electrode 61 and the second electrode 63 can be adjusted according to the wavelength of the emitted light, for example, the distance between the two can be an integer multiple of the half wavelength of the emitted light.
- the thickness may be in the range of 5nm-20nm, for example, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 13nm, 13nm, 15nm, 16nm, 17nm , 18nm, 19nm or 20nm.
- the plurality of conductive scattering blocks 632 shown in FIG. 1B since their irregular surfaces cover the light-emitting layer 62, they can be arranged such that the sum of the area of the orthographic projection of the plurality of conductive scattering blocks 632 in the direction perpendicular to the silicon-based substrate is the first
- the area of the orthographic projection of the electrode 61 in the direction perpendicular to the silicon-based substrate is 30% to 70%, for example, 30%, 40%, 50%, 60%, or 70%, so as to facilitate light transmission.
- the orthographic projections of the plurality of conductive scattering blocks 632 in the direction perpendicular to the silicon-based substrate are uniformly distributed on the silicon-based substrate, as shown in FIGS. 9A and 9B.
- the shape of the orthographic projection of the plurality of conductive scattering blocks 632 in the direction perpendicular to the silicon-based substrate is the same, and the shape of the orthographic projection of the first electrode in the direction perpendicular to the silicon-based substrate is similar or the same.
- the plurality of conductive scattering blocks 632 may be hexagonal or circular, and their shape is the same as or similar to that of the first electrode 61.
- the plurality of conductive scattering blocks 632 may be corresponding circular or hexagonal shapes; or patterns with similar shapes, for example, the first electrode 61 is circular, and the plurality of conductive scattering blocks 632
- the conductive scattering block 632 has a hexagonal shape.
- the extension of each side and the angle direction and size (arrangement) of each side of the shape of the plurality of conductive scattering blocks 632 are the same as the shape of the first electrode 61.
- the plurality of conductive scattering blocks 632 may also be rectangular, elliptical, arbitrary polygon, etc., which are the same or similar to the shape of the first electrode 61.
- the area of the plurality of conductive scattering blocks 632 in other projection directions is not limited, and the projection of the plurality of conductive scattering blocks 632 in other projection directions, such as a direction perpendicular to the silicon-based substrate, may be rectangular, trapezoidal or other shapes.
- the carrier (electron) mobility of the material of the conductive scattering substructure is within the following range of 10 -4 cm 2 V -1 s -1 to 10 cm 2 V -1 s -1 , that is, the conductive scattering substructure
- the material of is a semiconductor material, and makes the conductive scattering substructure coincide with the ohmic contact barrier between the first metal film layer and the second metal film layer.
- the optical energy gap of the material of the conductive scattering substructure is greater than 2.5 eV, that is, the conductive scattering substructure is transparent and its light transmittance is better than that of the first metal film layer and the second metal film layer, so as to ensure that the embedding has The optical penetration properties of the second electrode of the conductive scattering block substructure meet the requirements.
- the material of the transparent conductive scattering substructure includes a transparent organic semiconductor material, an inorganic semiconductor material, or a transparently doped inorganic semiconductor material or a doped organic semiconductor material.
- Organic semiconductor materials may include 8-hydroxyquinoline aluminum (Alq3); bathophenanthroline (Bphen); 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline (BCP) At least one of them.
- Inorganic semiconductor materials include carbon materials, such as graphene, nano-carbon materials, carbon fibers, carbon materials, and so on.
- LiF lithium fluoride
- Liq lithium quinolate
- Li lithium
- MgP magnesium phosphide
- MgF2 magnesium fluoride
- Al can be doped into transparent organic semiconductor materials or inorganic semiconductor materials 2 O 3 (alumina), etc., to improve its conductivity.
- the material of the first metal film layer 631 and the second metal film layer 633 includes at least one of a magnesium-silver alloy and a silver alloy.
- the reason for using magnesium-silver alloy, silver alloy, and thin metal as the transmissive electrode of the OLED device is to maintain the electrical conductivity of the electrode while participating in the optical regulation.
- the structure between the first electrode 61 and the second electrode 63 of the OLED device of the present disclosure may also include a hole transport layer and a hole injection layer between the first electrode 61 and the second electrode 63. Layer, electron injection layer and electron transport layer. Along the direction of the first electrode 61 to the second electrode 63, a hole transport layer, a hole injection layer, a light emitting layer, an electron injection layer, and an electron transport layer are sequentially arranged.
- FIG. 4 is a schematic diagram of the light path of the OLED device of the present disclosure and the OLED device in the related art.
- FIG. 5 is a schematic diagram of the comparison of the light transmittance of the OLED light-emitting device of the present disclosure and the OLED light-emitting device in the related art.
- a) in FIG. 4 shows that the control group 1 uses a magnesium-silver alloy with a thickness of 14 nm as the cathode 1
- (c) in FIG. 4 shows that the control group 2 uses a thickness of 17 nm
- the magnesium-silver alloy is used as the cathode 2.
- Figure (b) shows that the experimental group uses a homogeneous magnesium-silver alloy 8nm/organic semiconductor material film layer 3nm/magnesium-silver alloy 6nm composite structure of the second electrode (ie, cathode).
- the arrows in (a), (b) and (c) indicate the direction of light emission.
- Both the control group 1 and the experimental group have the same optical transmittance, about 25%, under the condition that the total metal thickness is 14nm.
- the experimental results show that under the same current conditions, the spectral response of the experimental group is equivalent to the spectral response of the 17nm magnesium-silver alloy of the control group 2.
- the experimental group using the composite structure maintains an optical transmittance of 25%, and the spectrum result is close to the electrode spectrum result of the control group 2 with a thickness of 17nm. Maintaining the luminous intensity, after testing, the electrode penetration rate of the 17nm magnesium-silver alloy control group 2 is less than 15%. The luminous intensity of the experimental group and the control group 2 differed by about 12%. It can be seen from this that the present disclosure can achieve optical control under the Fabry-Pérot resonance mechanism by using a composite structure with a thin total metal thickness while maintaining optical requirements, which is helpful to increase the total luminous brightness.
- FIG. 6 is a manufacturing flow chart of a silicon-based OLED display substrate according to an embodiment of the present disclosure. As shown in FIG. 6, the method includes four steps S110-S140.
- a silicon-based substrate is provided.
- a first electrode is formed on the silicon-based substrate, which can serve as a reflective electrode (that is, an anode).
- a light-emitting layer is formed on the side of the first electrode away from the silicon-based substrate.
- a second electrode is formed on the side of the light-emitting layer away from the first electrode and used as a transmissive electrode (ie, a cathode).
- the second electrode includes at least one set of the following composite structures: the first metal film layer is located on the side of the light-emitting layer away from the first electrode; the conductive scattering sub-structure is located on the side of the first metal film layer away from the light-emitting layer And the second metal film layer, which is located on the side of the conductive scattering substructure away from the first metal film layer.
- forming the second electrode may include the following steps.
- Fig. 7 shows a production flow chart of the second electrode according to an embodiment of the present disclosure.
- a first metal film layer is formed on the light-emitting layer.
- a conductive scattering layer is formed on the first metal film layer, and the transparent conductive scattering layer is patterned to form a plurality of island-shaped conductive scattering blocks.
- a second metal film layer covering the plurality of transparent conductive scattering blocks is formed.
- forming the second electrode may include the following steps.
- Fig. 8 shows a production flow chart of the second electrode according to an embodiment of the present disclosure.
- a first metal film layer is formed on the light-emitting layer.
- a conductive scattering film layer is formed on the first metal film layer.
- a second metal film layer covering the conductive scattering film layer is formed.
- the material of the transparent conductive scattering film layer or the plurality of conductive scattering blocks may include organic semiconductor materials, inorganic semiconductor materials or doped inorganic semiconductor materials, or doped organic semiconductor materials.
- the organic semiconductor material may include Alq3, Bphen, and BCP, and the inorganic semiconductor material may include a carbon material.
- the material of the first metal film layer and the second metal film layer may include at least one of a magnesium-silver alloy and a silver alloy.
- the thickness of the second electrode may be in the range of 12 nm to 20 nm, and the thickness of the transparent conductive scattering block may be in the range of 2 nm to 7 nm.
- the silicon-based substrate may include pixel circuits formed on the silicon-based substrate.
- the pixel circuit has a driving transistor including a source, a drain, and a gate. Wherein, the drain of the driving transistor is connected to the first electrode of the OLED device through the via hole in the film layer between the pixel circuit and the OLED device, and then drives the OLED device to emit light.
- FIG. 2 is a schematic structural diagram of a silicon-based OLED display substrate according to an embodiment of the present disclosure.
- FIG. 3 is a schematic structural diagram of a silicon-based OLED display substrate according to an embodiment of the present disclosure.
- the silicon-based OLED display substrate includes the following structures: a silicon-based substrate 1; an active region 101; a source electrode 1011, a drain electrode 1012; a flat layer 2; a first electrode layer 3; a pixel defining layer 4; Light emitting layer 5; second electrode 6; gate insulating layer 7; gate 8; first insulating layer 9; first wiring layer 10; second insulating layer 11; second wiring layer 12; first encapsulation layer 21; Surface flat layer 22; color filter layer 23; second encapsulation layer 24; light-concentrating structure 25; third encapsulation layer 26 and transparent cover 27.
- the first electrode layer 3 includes a first conductive layer 320, a second conductive layer 321 and a third conductive layer 322.
- the silicon-based substrate 100 includes all the structures under the second electrode 6.
- the structure of the silicon-based OLED display substrate shown in FIG. 3 is basically the same as that of FIG. 2, except that the silicon-based OLED display substrate shown in FIG. 3 does not include the light-concentrating structure 25, which will not be repeated here.
- the silicon-based OLED display substrate of the present disclosure has the OLED devices in the above embodiments, the light-emitting performance of the display panel can be effectively improved.
- a display panel which includes the display substrate provided in any of the above embodiments and a driving circuit for driving the display substrate. Since the silicon-based OLED display substrate of the present disclosure has the OLED devices in the above embodiments, the light-emitting performance of the display panel can be effectively improved.
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Abstract
Description
Claims (20)
- 一种硅基有机电致发光显示基板,包括硅基基底以及位于所述硅基基底上的多个像素单元,其中,所述多个像素单元中的每一个包括:第一电极,其位于所述硅基基底的一侧;发光层,其位于所述第一电极远离所述硅基基底的一侧;以及第二电极,其位于所述发光层远离所述第一电极的一侧,其中,所述多个像素单元中的至少一个的所述第二电极包括至少一组如下的复合结构:第一金属膜层,其位于所述发光层远离所述第一电极的一侧;导电散射子结构,其位于所述第一金属膜层远离所述发光层的一侧;以及第二金属膜层,其位于所述导电散射子结构远离所述第一金属膜层的一侧。
- 根据权利要求1所述的显示基板,其中,所述第一电极为反射电极,所述第二电极为透射电极。
- 根据权利要求2所述的显示基板,其中,所述第二电极在垂直于所述硅基基底方向上的厚度在12nm~20nm范围内,
- 根据权利要求1-3中任一项所述的显示基板,其中,所述导电散射子结构包括导电散射膜层。
- 根据权利要求4所述的显示基板,其中,所述导电散射膜层在垂直于所述硅基基底方向上的厚度在2nm~7nm范围内。
- 根据权利要求1-3中任一项所述的显示基板,其中,所述导电散射子结构包括多个导电散射块。
- 根据权利要求6所述的显示基板,其中,所述多个导电散射块在垂直于所述硅基基底方向上的厚度在5nm~20nm范围内。
- 根据权利要求7所述的显示基板,其中,所述多个导电散射块在垂直于所述硅基基底方向上的正投影的面积之和为所述第一电极在垂直于所述硅基基底方向上的正投影的面积的30%~70%。
- 根据权利要求8所述的显示基板,其中,所述多个导电散射块在垂直于所述硅基基底方向上的正投影在所述硅基基底上均匀分布。
- 根据权利要求9所述的显示基板,其中,所述多个导电散射块在垂直于所述硅基基底方向上的正投影的形状相同,并且与所述第一电极在垂直于所述硅基基底方向上的正投影的形状相同。
- 根据权利要求1-10中任一项所述的显示基板,其中,所述导电散射子结构的材料的载子迁移率在以下范围内10 -4cm 2V -1s -1~10cm 2V -1s -1,以及所述导电散射子结构的材料的光学能隙大于2.5eV。
- 根据权利要求11所述的显示基板,其中,所述导电散射子结构的材料包括有机半导体材料和无机半导体材料,或者包括掺杂的无机半导体材料和掺杂的有机半导体材料。
- 根据权利要求12所述的显示基板,其中,所述有机半导体材料包括8-羟基喹啉铝、红菲咯啉和2,9-二甲基-4,7-联苯-1,10-邻二氮杂菲。
- 根据权利要求12所述的显示基板,其中,所述无机半导体材料包括碳材,以及所述碳材包括石墨烯、纳米碳材料、碳纤维和碳素材料中的至少 一种。
- 根据权利要求12所述的显示基板,其中,掺杂的无机半导体材料和掺杂的有机半导体材料中的掺杂材料包括氟化锂、8-羟基喹啉锂、锂、磷化镁、氟化镁和氧化铝中的至少一者。
- 根据权利要求1所述的显示基板,其中,所述第一金属膜层和所述第二金属膜层的材料包括镁银合金、银合金中的至少一种。
- 一种显示面板,包括权利要求1-16中任一项所述的显示基板以及用于驱动所述显示基板的驱动电路。
- 一种用于制作权利要求1-16中任一项所述硅基有机电致发光显示基板的方法,包括:提供硅基基底;在所述硅基基底上形成第一电极;在所述第一电极的远离所述硅基基底的一侧形成发光层,以及在所述发光层远离所述第一电极的一侧形成第二电极,以使得所述第二电极包括至少一组如下的复合结构:第一金属膜层,其位于所述发光层远离所述第一电极的一侧;导电散射子结构,其位于所述第一金属膜层远离所述发光层的一侧;以及第二金属膜层,其位于所述导电散射子结构远离所述第一金属膜层的一侧。
- 根据权利要求18所述的方法,其中,形成所述第二电极包括:在所述发光层上形成第一金属膜层;在所述第一金属膜层上形成导电散射膜层;以及在所述导电散射膜层上形成第二金属膜层。
- 根据权利要求18所述的方法,其中,形成所述第二电极包括:在所述发光层上形成第一金属膜层;在所述第一金属膜层上形成导电散射层,对所述导电散射层进行图案化处理以形成岛状的多个导电散射块;以及在所述导电散射块上形成覆盖所述多个导电散射块的第二金属膜层。
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