WO2021251422A1 - Procédé de production de dispositif électronique - Google Patents

Procédé de production de dispositif électronique Download PDF

Info

Publication number
WO2021251422A1
WO2021251422A1 PCT/JP2021/021873 JP2021021873W WO2021251422A1 WO 2021251422 A1 WO2021251422 A1 WO 2021251422A1 JP 2021021873 W JP2021021873 W JP 2021021873W WO 2021251422 A1 WO2021251422 A1 WO 2021251422A1
Authority
WO
WIPO (PCT)
Prior art keywords
adhesive
electronic component
electronic device
adhesive film
resin layer
Prior art date
Application number
PCT/JP2021/021873
Other languages
English (en)
Japanese (ja)
Inventor
浩登 安井
宏嘉 栗原
仁 木下
Original Assignee
三井化学東セロ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三井化学東セロ株式会社 filed Critical 三井化学東セロ株式会社
Priority to KR1020227042840A priority Critical patent/KR20230007493A/ko
Priority to JP2022530601A priority patent/JP7440633B2/ja
Priority to CN202180041382.0A priority patent/CN115699263A/zh
Publication of WO2021251422A1 publication Critical patent/WO2021251422A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
    • C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Definitions

  • the present invention relates to a method for manufacturing an electronic device.
  • an adhesive film is attached to the circuit forming surface of the electronic components in order to fix the electronic components and prevent damage to the electronic components. Be done.
  • an adhesive film a film in which an adhesive resin layer is laminated on a base film is generally used.
  • a pre-dicing method is used in which a groove having a predetermined depth is formed on the surface of an electronic component before grinding the electronic component, and then grinding is performed to separate the electronic component into individual pieces.
  • a pre-stealth method in which a modified region is formed by irradiating the inside of an electronic component with a laser before grinding, and then grinding is performed to individualize the electronic component.
  • Patent Document 1 Japanese Patent Laid-Open No. 2014-75560
  • Patent Document 2 Japanese Patent Laid-Open No. 2016-72546
  • Patent Document 1 describes a surface protective sheet having an adhesive layer on a base material and satisfying the following requirements (a) to (d).
  • (A) Young's modulus of the substrate is 450 MPa or more
  • (b) Storage elastic modulus of the pressure-sensitive adhesive layer at 25 ° C. is 0.10 MPa or more
  • (c) Storage elasticity of the pressure-sensitive adhesive layer at 50 ° C. The ratio is 0.20 MPa or less.
  • (D) The thickness of the pressure-sensitive adhesive layer is 30 ⁇ m or more. It is described that it is possible to suppress the infiltration of water (sludge infiltration) into the protected surface of the work from the gap formed by the work and prevent the protected surface of the work from being contaminated.
  • Patent Document 2 has a base material resin film and a radiation-curable pressure-sensitive adhesive layer formed on at least one side of the base material resin film, and the base material resin film has a tensile elasticity of 1 to 1 to 2.
  • a semiconductor characterized by having at least one rigid layer having 10 GPa and having a peeling force of 0.1 to 3.0 N / 25 mm at a peeling angle of 30 ° after the pressure-sensitive adhesive layer is radiation-cured. Adhesive tape for protecting the surface of the wafer is described.
  • such an adhesive tape for protecting the surface of a semiconductor wafer suppresses calf shift of an individualized semiconductor chip in a backside grinding process of a semiconductor wafer to which a pre-dicing method or a pre-stealth method is applied.
  • the semiconductor wafer can be processed without being damaged or contaminated.
  • the present invention has been made in view of the above circumstances, and a method for manufacturing an electronic device capable of suppressing adhesive residue on the electronic component side when peeling an adhesive film from an electronic component after a backgrinding process is provided. It is to provide.
  • the present inventors have made extensive studies in order to achieve the above-mentioned problems. As a result, by adjusting the breaking elongation of the adhesive resin layer after irradiation with ultraviolet rays to a specific range, the adhesive residue on the electronic component side when the adhesive film is peeled off from the electronic component after the backgrinding process.
  • the present invention has been completed by finding that it is possible to suppress the above.
  • the following method for manufacturing an electronic device is provided.
  • a method of manufacturing an electronic device that includes at least The adhesive film comprises a base material layer and an ultraviolet curable adhesive resin layer provided on one surface side of the base material layer.
  • a method for manufacturing an electronic device in the step (C), wherein the breaking elongation of the adhesive resin layer after irradiation with ultraviolet rays is 20% or more and 200% or less.
  • the above step (A) is At least one step (A1-2) selected from a step of half-cutting the electronic component (A1-1) and a step of irradiating the electronic component with a laser to form a modified layer on the electronic component (A1-2).
  • a method of manufacturing an electronic device including. [3] In the method for manufacturing an electronic device according to the above [1] or [2].
  • the adhesive resin layer is photo-cured by irradiating the adhesive film with ultraviolet rays having a dose of 200 mJ / cm 2 or more and 2000 mJ / cm 2 or less to obtain the adhesive resin layer.
  • a method for manufacturing an electronic device that removes the adhesive film from the electronic component after reducing the adhesive strength. [4] In the method for manufacturing an electronic device according to any one of the above [1] to [3]. The method for manufacturing an electronic device, wherein the adhesive resin layer contains a (meth) acrylic resin having a polymerizable carbon-carbon double bond in the molecule and a photoinitiator. [5] In the method for manufacturing an electronic device according to any one of the above [1] to [4].
  • the resins constituting the base material layer are polyolefin, polyester, polyamide, polyacrylate, polymethacrylate, polyvinyl chloride, polyvinylidene chloride, polyimide, polyetherimide, ethylene / vinyl acetate copolymer, polyacrylonitrile, polycarbonate, polystyrene.
  • a method for producing an electronic device comprising one or more selected from ionomer, polysulfone, polyethersulfone and polyphenylene ether.
  • the present invention it is possible to provide a method for manufacturing an electronic device capable of suppressing adhesive residue on the electronic component side when the adhesive film is peeled from the electronic component after the back grind process.
  • FIG. 1 is a cross-sectional view schematically showing an example of the structure of the adhesive film 50 according to the embodiment of the present invention.
  • FIG. 2 is a cross-sectional view schematically showing an example of a method for manufacturing an electronic device according to an embodiment of the present invention.
  • the method for manufacturing an electronic device according to the present embodiment prepares a structure 100 including an electronic component 30 having a circuit forming surface 30A and an adhesive film 50 bonded to the circuit forming surface 30A side of the electronic component 30.
  • a method for manufacturing an electronic device including at least a removing step (C), wherein the adhesive film 50 is an ultraviolet curable adhesive provided on one surface side of the base material layer 10 and the base material layer 10.
  • the adhesive resin layer 20 is provided with the sex resin layer 20, and in the step (C), the breaking elongation of the adhesive resin layer 20 after being irradiated with ultraviolet rays (after curing by ultraviolet rays) is 20% or more and 200% or less.
  • the breaking elongation of the adhesive resin layer 20 after being cured by ultraviolet rays is a value measured by the following method.
  • the adhesive resin layer 20 is cut into a length of 110 mm and a width of 10 mm together with the base material layer 10, and a tensile tester (for example, Shimadzu Corporation, Autograph AGS-X) is used so that the initial chuck distance Lo is 50 mm. Chuck.
  • the sample is pulled at a speed of 30 mm / min, and the point at which fracture is visually observed in the adhesive resin layer 20 is defined as the fracture point, and the distance between chucks at that time is defined as L.
  • the elongation at break (%) is determined by (L-Lo) / Lo ⁇ 100 (%).
  • the breaking elongation of the adhesive resin layer 20 after UV curing is the same as that of the adhesive resin layer 20 used in the manufacturing method of the electronic device according to the present embodiment, and the adhesive resin layer 20 is prepared separately.
  • a value obtained by measuring the elongation at break by the following method may be adopted.
  • the adhesive film 50 according to the present embodiment is used on the corona-treated surface of the corona-treated ethylene-vinyl acetate copolymer extruded film (MFR: 1.7 g / 10 min, vinyl acetate content: 9% by mass, thickness: 140 ⁇ m).
  • MFR corona-treated ethylene-vinyl acetate copolymer extruded film
  • a release film such as a silicone terephthalate film treated with silicone is laminated on the adhesive resin layer 20 side.
  • a release film such as a silicone terephthalate film treated with silicone
  • the laminating method include the following methods. An adhesive resin layer 20 is formed on the release-treated surface of the silicone release-treated polyethylene terephthalate film, and then a corona-treated ethylene-vinyl acetate copolymer film is laminated on the adhesive resin layer 20. Get the body. Then, the obtained laminate is heated in an oven at 40 ° C. for 3 days and aged.
  • the adhesive resin layer 20 is irradiated with ultraviolet rays from the ethylene-vinyl acetate copolymer film side of the obtained laminate to photocure the adhesive resin layer 20.
  • the laminate obtained by photocuring the adhesive resin layer 20 is cut into a length of 110 mm and a width of 10 mm, and the polyethylene terephthalate film as a separator is peeled off from the laminate.
  • the adhesive resin layer 20 is chucked together with the ethylene-vinyl acetate copolymer film with a tensile tester (for example, Shimadzu Corporation, Autograph AGS-X) so that the initial chuck distance Lo is 50 mm.
  • a tensile tester for example, Shimadzu Corporation, Autograph AGS-X
  • the sample is pulled at a speed of 30 mm / min, and the point at which fracture is visually observed in the adhesive resin layer 20 is defined as the fracture point, and the distance between chucks at that time is defined as L.
  • the elongation at break (%) is determined by (L-Lo) / Lo ⁇ 100 (%).
  • the breaking elongation of the adhesive resin layer 20 after irradiation with ultraviolet rays in the step (C) is 20% or more and 200% or less, but the adhesive resin layer 20 has From the viewpoint of designing the adhesive resin layer 20 in which adhesive residue is less likely to occur by giving an appropriate toughness, it is preferably 30% or more, more preferably 40% or more, and preferably 150% or less, more preferably 100. % Or less, more preferably 80% or less.
  • the breaking elongation of the adhesive resin layer 20 after irradiation with ultraviolet rays in the step (C) is, for example, the type and blending ratio of the adhesive resin and the cross-linking agent constituting the adhesive resin layer 20, the light initiator, and the adhesiveness. It can be controlled within the above range by controlling the type and content ratio of each monomer in the sex resin and the ultraviolet irradiation conditions (for example, the amount of ultraviolet rays, the irradiation intensity, and the irradiation time) in the step (C).
  • the adhesive film 50 includes a base material layer 10 and an ultraviolet curable adhesive resin layer 20 provided on one surface side of the base material layer 10. , Equipped with.
  • the thickness of the entire adhesive film 50 according to the present embodiment is preferably 50 ⁇ m or more and 600 ⁇ m or less, more preferably 50 ⁇ m or more and 400 ⁇ m or less, and further preferably 50 ⁇ m or more and 300 ⁇ m, from the viewpoint of the balance between mechanical properties and handleability. It is as follows.
  • the adhesive film 50 according to the present embodiment is provided with other layers such as a concave-convex absorbent resin layer, an adhesive layer, and an antistatic layer (not shown) between the layers as long as the effects of the present invention are not impaired. May be good.
  • the unevenness absorbing resin layer the unevenness absorbing property of the adhesive film 50 can be improved.
  • the adhesive layer the adhesiveness between the layers can be improved.
  • the antistatic layer the antistatic property of the adhesive film 50 can be improved.
  • the base material layer 10 is a layer provided for the purpose of improving the handleability, mechanical properties, heat resistance, and other properties of the adhesive film 50.
  • the base material layer 10 is not particularly limited as long as it has mechanical strength capable of withstanding an external force applied when processing the electronic component 30, and examples thereof include a resin film.
  • the resin constituting the base material layer 10 include polyolefins such as polyethylene, polypropylene, poly (4-methyl-1-pentene) and poly (1-butene); polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate and the like.
  • Polyester such as Nylon-6, Nylon-66, Polymethoxylen adipamide; (Meta) acrylic resin; Polyvinyl chloride; Polyvinyl chloride; Polyethylene; Polyetherimide; Ethylene-vinyl acetate copolymer; Poly One or more selected from acrylonitrile; polycarbonate; polystyrene; ionomer; polysulfone; polyethersulfone; polyether ether ketone and the like can be mentioned.
  • one or more selected from polyethylene terephthalate and polyethylene naphthalate are more preferable.
  • the base material layer 10 may be a single layer or two or more types of layers. Further, the form of the resin film used for forming the base material layer 10 may be a stretched film or a film stretched in a uniaxial direction or a biaxial direction, but the base material layer 10 may be used. From the viewpoint of improving the mechanical strength of the film, a film stretched in a uniaxial direction or a biaxial direction is preferable.
  • the base material layer 10 is preferably annealed in advance from the viewpoint of suppressing warpage of electronic components after grinding.
  • the base material layer 10 may be surface-treated in order to improve the adhesiveness with other layers. Specifically, corona treatment, plasma treatment, undercoat treatment, primer coating treatment and the like may be performed.
  • the thickness of the base material layer 10 is preferably 20 ⁇ m or more and 250 ⁇ m or less, more preferably 30 ⁇ m or more and 200 ⁇ m or less, and further preferably 50 ⁇ m or more and 150 ⁇ m or less from the viewpoint of obtaining good film characteristics.
  • the adhesive film 50 includes an ultraviolet curable adhesive resin layer 20.
  • the adhesive resin layer 20 is a layer provided on one surface side of the base material layer 10, and when the adhesive film 50 is attached to the circuit forming surface 30A of the electronic component 30, the circuit forming surface 30A of the electronic component 30 is attached. It is a layer that comes into contact with and adheres to.
  • Examples of the adhesive constituting the adhesive resin layer 20 include (meth) acrylic adhesive, silicone adhesive, urethane adhesive, olefin adhesive, styrene adhesive and the like. Among these, a (meth) acrylic pressure-sensitive adhesive using a (meth) acrylic resin as a base polymer is preferable because the adhesive strength can be easily adjusted.
  • the pressure-sensitive adhesive constituting the pressure-sensitive adhesive resin layer 20 it is preferable to use an ultraviolet cross-linked pressure-sensitive adhesive whose adhesive strength is lowered by ultraviolet rays. Since the adhesive resin layer 20 composed of the ultraviolet cross-linking type adhesive is crosslinked by irradiation with ultraviolet rays and the adhesive force is remarkably reduced, the electronic component 30 can be easily peeled off from the adhesive film 50.
  • Examples of the (meth) acrylic resin contained in the (meth) acrylic pressure-sensitive adhesive include a homopolymer of a (meth) acrylic acid ester compound, a copolymer of a (meth) acrylic acid ester compound and a comonomer, and the like. Be done.
  • Examples of the (meth) acrylic acid ester compound include methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, hydroxyethyl (meth) acrylate, and hydroxypropyl (meth).
  • Examples thereof include acrylate, dimethylaminoethyl (meth) acrylate, and glycidyl (meth) acrylate. These (meth) acrylic acid ester compounds may be used alone or in combination of two or more.
  • Examples of the comonomer constituting the (meth) acrylic copolymer include vinyl acetate, (meth) acrylonitrile, styrene, (meth) acrylic acid, itaconic acid, (meth) acrylic amide, and methylol (meth) acrylic. Examples thereof include acrylamide and maleic anhydride. These comonomer may be used alone or in combination of two or more.
  • the ultraviolet cross-linking type (meth) acrylic pressure-sensitive adhesive contains a (meth) acrylic resin having a polymerizable carbon-carbon double bond in the molecule and a photoinitiator, and if necessary, a cross-linking agent can be used as described above ( Meta)
  • Meta An example of a pressure-sensitive adhesive obtained by cross-linking an acrylic resin can be exemplified.
  • the UV-crosslinked (meth) acrylic pressure-sensitive adhesive may further contain a low molecular weight compound having two or more polymerizable carbon-carbon double bonds in the molecule.
  • a (meth) acrylic resin having a polymerizable carbon-carbon double bond in the molecule can be obtained as follows. First, a monomer having an ethylenic double bond and a copolymerizable monomer having a functional group (P) are copolymerized. Next, the functional group (P) contained in this copolymer and the monomer having a functional group (Q) capable of causing an addition reaction, a condensation reaction, etc. with the functional group (P) are double-bonded in the monomer. The reaction is carried out while leaving the above, and a polymerizable carbon-carbon double bond is introduced into the copolymer molecule.
  • Examples of the monomer having an ethylenic double bond include acrylic acid alkyl esters such as methyl (meth) acrylate, -2-ethylhexyl (meth) acrylate, butyl (meth) acrylate, and ethyl (meth) acrylate. And, one or more of the monomers having an ethylenic double bond such as an alkyl methacrylate ester monomer, a vinyl ester such as vinyl acetate, (meth) acrylonitrile, (meth) acrylamide, and styrene are used.
  • Examples of the copolymerizable monomer having the functional group (P) include (meth) acrylic acid, maleic acid, 2-hydroxyethyl (meth) acrylate, glycidyl (meth) acrylate, N-methylol (meth) acrylamide, and (meth). ) Acryloyloxyethyl isocyanate and the like can be mentioned. These may be used alone or in combination of two or more.
  • the ratio of the monomer having an ethylenic double bond to the copolymerizable monomer having a functional group (P) is 70 to 99% by mass of the monomer having an ethylenic double bond and has a functional group (P).
  • the copolymerizable monomer is preferably 1 to 30% by mass. More preferably, the monomer having an ethylenic double bond is 80 to 95% by mass, and the copolymerizable monomer having a functional group (P) is 5 to 20% by mass.
  • the monomer having the functional group (Q) include a monomer similar to the copolymerizable monomer having the functional group (P).
  • a combination such as a carboxyl group and an epoxy group, a carboxyl group and an aziridyl group, a hydroxyl group and an isocyanate group, etc., in which an addition reaction easily occurs is desirable.
  • any reaction may be used as long as it is a reaction in which a polymerizable carbon-carbon double bond can be easily introduced, such as a condensation reaction between a carboxylic acid group and a hydroxyl group.
  • Examples of the low molecular weight compound having two or more polymerizable carbon-carbon double bonds in the molecule include tripropylene glycol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethanetetraacrylate, and pentaerythritol. Examples thereof include tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and ditrimethylolpropane tetraacrylate. These may be used alone or in combination of two or more.
  • the amount of the low molecular weight compound having two or more polymerizable carbon-carbon double bonds in the molecule is preferably 0.1 to 20 parts by mass with respect to 100 parts by mass of the (meth) acrylic resin. More preferably, it is 5 to 18 parts by mass.
  • photoinitiator examples include benzoin, isopropylbenzoin ether, isobutyl benzoin ether, benzophenone, Michler ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, acetophenone diethyl ketal, benzyl dimethyl ketal, 1-hydroxycyclohexylphenyl ketone, 2 -Hydroxy-2-methyl-1-phenylpropan-1-one, 2-benzyl-2-dimethylamino-4'-morpholinobtyrophenone, 2,2-dimethoxy-2-phenylacetophenone, 2-dimethylamino-2- Examples thereof include (4-methylbenzyl) -1- (4-morpholin-4-yl-phenyl) butane-1-one.
  • the amount of the photoinitiator added is preferably 0.1 to 15 parts by mass, more preferably 1 to 10 parts by mass, still more preferably 4 to 4 to 100 parts by mass with respect to 100 parts by mass of the (meth) acrylic resin. It is 10 parts by mass.
  • a cross-linking agent may be added to the ultraviolet curable pressure-sensitive adhesive.
  • the cross-linking agent include epoxy compounds such as sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, and diglycerol polyglycidyl ether, and tetramethylolmethane-tri- ⁇ -aziridinyl propionate.
  • the ultraviolet curable pressure-sensitive adhesive may be any of solvent type, emulsion type, hot melt type and the like.
  • the content of the cross-linking agent is usually preferably in a range such that the number of functional groups in the cross-linking agent does not become larger than the number of functional groups in the (meth) acrylic resin. However, if a new functional group is generated in the cross-linking reaction or the cross-linking reaction is slow, the cross-linking reaction may be excessively contained as needed.
  • the content of the cross-linking agent in the (meth) acrylic pressure-sensitive adhesive is 0. It is preferably 1 part by mass or more and 15 parts by mass or less, and more preferably 0.5 parts by mass or more and 5 parts by mass or less.
  • the adhesive resin layer 20 can be formed, for example, by applying an adhesive coating liquid on the base material layer 10.
  • a method for applying the pressure-sensitive adhesive coating liquid for example, a conventionally known coating method such as a roll coater method, a reverse roll coater method, a gravure roll method, a bar coat method, a comma coater method, or a die coater method can be adopted. ..
  • the drying conditions of the applied pressure-sensitive adhesive are not particularly limited, but in general, it is preferable to dry the applied adhesive in a temperature range of 80 to 200 ° C. for 10 seconds to 10 minutes. More preferably, it is dried at 80 to 170 ° C. for 15 seconds to 5 minutes.
  • the pressure-sensitive adhesive coating liquid may be heated at 40 to 80 ° C. for about 5 to 300 hours after the drying is completed.
  • the thickness of the adhesive resin layer 20 is preferably 5 ⁇ m or more and 300 ⁇ m or less, more preferably 10 ⁇ m or more and 100 ⁇ m or less, and further preferably 10 ⁇ m or more and 50 ⁇ m or less.
  • the thickness of the adhesive resin layer 20 is within the above range, the balance between the adhesiveness to the surface of the electronic component 30 and the handleability is good.
  • the manufacturing method of the electronic device according to the present embodiment includes at least the following three steps.
  • a step of preparing a structure 100 including an electronic component 30 having a circuit forming surface 30A and an adhesive film 50 bonded to the circuit forming surface 30A side of the electronic component 30 (B) Circuit of the electronic component 30. Step of backgrinding the surface opposite to the formation surface 30A side (C) Step of removing the adhesive film 50 from the electronic component 30 after irradiating the adhesive film 50 with ultraviolet rays Then, in step (C), ultraviolet rays are applied.
  • the adhesive resin layer 20 after irradiation is characterized in that the breaking elongation is 20% or more and 200% or less.
  • Step (A) First, a structure 100 including an electronic component 30 having a circuit forming surface 30A and an adhesive film 50 bonded to the circuit forming surface 30A side of the electronic component 30 is prepared.
  • the release film is peeled off from the adhesive resin layer 20 of the adhesive film 50 to expose the surface of the adhesive resin layer 20, and an electronic component is placed on the adhesive resin layer 20. It can be manufactured by pasting the circuit forming surface 30A of 30.
  • the conditions for attaching the circuit forming surface 30A of the electronic component 30 to the adhesive film 50 are not particularly limited, but for example, the temperature is 20 to 80 ° C., the pressure is 0.05 to 0.5 MPa, and the attachment speed. Can be 0.5 to 20 mm / sec.
  • the step (A) is selected from a step of half-cutting the electronic component 30 (A1-1) and a step of irradiating the electronic component 30 with a laser to form a modified layer on the electronic component 30 (A1-2). It is preferable to further include at least one step (A1) and a step (A2) of attaching the adhesive film 50 to the circuit forming surface 30A side of the electronic component 30 after the step (A1).
  • a pre-dicing method, a pre-stealth method, or the like when the adhesive film 50 is peeled off from the electronic component 30 after the back grind process, adhesive residue remains on the electronic component 30 side.
  • the method for manufacturing an electronic device according to the present embodiment can be suitably applied to a manufacturing process for an electronic device using a pre-dicing method, a pre-stealth method, or the like. Therefore, a manufacturing method in which the above-mentioned step (A1-1), which is a pre-dicing method, or the above-mentioned step (A1-2), which is a pre-stealth method, is preferable.
  • the adhesive film 50 can be heated and attached to the circuit forming surface 30A of the electronic component 30. Thereby, the adhesive state between the adhesive resin layer 20 and the electronic component 30 can be improved for a long time.
  • the heating temperature is not particularly limited, but is, for example, 60 to 80 ° C.
  • the operation of attaching the adhesive film 50 to an electronic component may be performed manually, but in general, it can be performed by a device called an automatic attaching machine to which a roll-shaped adhesive film is attached.
  • the electronic component 30 to be attached to the adhesive film 50 is not particularly limited, but is preferably the electronic component 30 having the circuit forming surface 30A.
  • Examples thereof include semiconductor wafers, epoxy mold wafers, mold panels, mold array packages, semiconductor substrates and the like, and semiconductor wafers and epoxy mold wafers are preferable.
  • semiconductor wafers include silicon wafers, sapphire wafers, germanium wafers, germanium-arsenic wafers, gallium-phosphorus wafers, gallium-arsenic-aluminum wafers, gallium-arsenic wafers, lithium tartrate wafers, and the like. It is suitably used for.
  • Examples of the epoxy molded wafer include a wafer manufactured by the eWLB (Embedded Wafer Level Ball Grid Array) process, which is one of the methods for manufacturing a fan-out type WLP.
  • the semiconductor wafer and the epoxy molded wafer having a circuit forming surface are not particularly limited, and are used, for example, those in which a circuit such as a wiring, a capacitor, a diode or a transistor is formed on the surface. Further, the circuit forming surface may be subjected to plasma treatment.
  • the circuit forming surface 30A of the electronic component 30 may be an uneven surface by having, for example, a bump electrode or the like. Further, for example, when the electronic device is mounted on the mounting surface, the bump electrode is bonded to the electrode formed on the mounting surface, and the bump electrode is formed between the electronic device and the mounting surface (mounting surface such as a printed substrate). It forms an electrical connection.
  • the bump electrode include bump electrodes such as ball bumps, printed bumps, stud bumps, plated bumps, and pillar bumps. That is, the bump electrode is usually a convex electrode. These bump electrodes may be used alone or in combination of two or more.
  • the height and diameter of the bump electrode are not particularly limited, but are preferably 10 to 400 ⁇ m, more preferably 50 to 300 ⁇ m, respectively.
  • the bump pitch at that time is also not particularly limited, but is preferably 20 to 600 ⁇ m, and more preferably 100 to 500 ⁇ m.
  • the metal type constituting the bump electrode is not particularly limited, and examples thereof include solder, silver, gold, copper, tin, lead, bismuth, and alloys thereof.
  • the bump electrode is a solder bump. It is preferably used in the case of. These metal species may be used alone or in combination of two or more.
  • Step (B) the surface (also referred to as the back surface) opposite to the circuit forming surface 30A side of the electronic component 30 is back grinded.
  • backgrinding means that the electronic component is thinned to a predetermined thickness without being damaged.
  • the structure 100 is fixed to a chuck table or the like of a grinder, and the back surface (circuit non-formed surface) of an electronic component is ground.
  • the electronic component 30 is ground until the thickness becomes equal to or less than a desired thickness.
  • the thickness of the electronic component before grinding is appropriately determined by the diameter, type and the like of the electronic component 30, and the thickness of the electronic component 30 after grinding is appropriately determined by the size of the obtained chip, the type of circuit and the like. Further, when the electronic component 30 is half-cut or the modified layer is formed by laser irradiation, the electronic component 30 is individualized by the step (B) as shown in FIG.
  • the back surface grinding method is not particularly limited, but a known grinding method can be adopted. Each grinding can be performed while cooling water by applying it to an electronic component and a grindstone. If necessary, a dry polishing process, which is a grinding method that does not use grinding water, can be performed at the end of the grinding process. After the back surface grinding is completed, chemical etching is performed as necessary. Chemical etching adheres to an etching solution selected from the group consisting of an acidic aqueous solution consisting of a single or mixed solution of hydrofluoric acid, nitric acid, sulfuric acid, acetic acid, etc., an aqueous solution of potassium hydroxide, an aqueous solution of sodium hydroxide, etc.
  • This is performed by a method such as immersing an electronic component in a state where the sex film 50 is attached.
  • the etching is performed for the purpose of removing strain generated on the back surface of the electronic component, further thinning the electronic component, removing an oxide film or the like, and pretreating when forming an electrode on the back surface.
  • the etching solution is appropriately selected according to the above purpose.
  • the adhesive film 50 is removed from the electronic component 30.
  • the adhesive resin layer 20 is photocured by irradiating the adhesive film 50 with ultraviolet rays having a dose of, for example, 200 mJ / cm 2 or more and 2000 mJ / cm 2 or less to photo-cure the adhesive resin layer 20.
  • the adhesive film 50 is removed from the electronic component 30.
  • the ultraviolet irradiation can be performed using, for example, an ultraviolet ray having a main wavelength of 365 nm using a high-pressure mercury lamp.
  • the irradiation intensity of ultraviolet rays is, for example, 50 mW / cm 2 or more and 500 mW / cm 2 or less.
  • the electronic component 30 Before removing the adhesive film from the electronic component 30, the electronic component 30 may be mounted on the dicing tape or the dicing tape with the die attach film.
  • the operation of removing the adhesive film 50 from the electronic component 30 may be performed manually, but it can be performed by a device generally called an automatic peeling machine.
  • the surface of the electronic component 30 after the adhesive film 50 has been peeled off may be cleaned if necessary.
  • the cleaning method include wet cleaning such as water cleaning and solvent cleaning, and dry cleaning such as plasma cleaning. In the case of wet cleaning, ultrasonic cleaning may be used in combination. These cleaning methods can be appropriately selected depending on the state of contamination of the surface of the electronic component.
  • a step of mounting the obtained semiconductor chip on a circuit board or the like may be further performed. These steps can be performed based on known information.
  • Base material layer 1 Polyethylene terephthalate film (manufactured by Toyobo Co., Ltd., product name: E7180, thickness: 50 ⁇ m, single-sided corona treated product)
  • Base material layer 2 Laminated film composed of low-density polyethylene film / polyethylene terephthalate film / low-density polyethylene film (total thickness: 110 ⁇ m) A low-density polyethylene film (density: 0.925 kg / m 3 , thickness: 30 ⁇ m) was laminated on both sides of a polyethylene terephthalate film (manufactured by Toray Industries, Inc., product name: Lumirror S10, thickness: 50 ⁇ m). Corona treatment was performed on one side of the obtained laminated film.
  • Base material layer 3 Laminated film composed of polyethylene terephthalate film / ethylene / vinyl acetate copolymer film / acrylic film (total thickness: 145 ⁇ m) Polyethylene terephthalate film (manufactured by Toyo Boseki Co., Ltd., product name: E7180, thickness: 50 ⁇ m) and ethylene-vinyl acetate copolymer (manufactured by Mitsui / Dow Polychemical Co., Ltd., MFR: 2.5 g / 10 minutes) film (thickness: 70 ⁇ m) was laminated by applying corona treatment to the bonded surface side of the ethylene-vinyl acetate copolymer film with the polyethylene terephthalate film.
  • the opposite side of the polyethylene terephthalate film of the ethylene-vinyl acetate copolymer film was also subjected to a corona discharge treatment.
  • the acrylic resin coating liquid for the base material shown below was coated and dried on the release surface of the release-treated polyethylene terephthalate film (separator) so as to have a dry thickness of 20 ⁇ m, and the above-mentioned polyethylene terephthalate film / It was bonded to a laminated film made of an ethylene-vinyl acetate copolymer film via an ethylene-vinyl acetate copolymer film and aged (40 ° C. for 3 days). Then, the separator was peeled off to obtain a base material layer 3.
  • ⁇ Acrylic resin coating liquid for base material> Using 0.5 parts by mass of 4,4'-azobis-4-cyanovaleric acid (manufactured by Otsuka Chemical Co., Ltd., product name: ACVA) as a polymerization initiator, 74 parts by mass of butyl acrylate, 14 parts by mass of methyl methacrylate, 9 parts by mass of -2-hydroxyethyl methacrylate, 2 parts by mass of methacrylic acid, 1 part by mass of acrylamide, 3 parts by mass of an aqueous solution of polyoxyethylene nonylpropenylphenylphenyl ether ammonium sulfate (manufactured by Daiichi Kogyo Seiyaku Co., Ltd., product name: Aqualon HS-1025) The moiety was emulsion-polymerized in deionized water at 70 ° C.
  • Acrylic resin solution 1 Toluene contains 49 parts by mass of ethyl acrylate, 20 parts by mass of -2-ethylhexyl acrylate, 21 parts by mass of methyl acrylate, 10 parts by mass of glycidyl methacrylate, and 0.5 parts by mass of a benzoyl peroxide-based polymerization initiator as a polymerization initiator. The reaction was carried out at 80 ° C. for 10 hours in 65 parts by mass and 50 parts by mass of ethyl acetate.
  • (Meta) Acrylic resin solution 2 77 parts by mass of n-butyl acrylate, 16 parts by mass of methyl methacrylate, 16 parts by mass of 2-hydroxyethyl acrylate, and 0.3 parts by mass of t-butylperoxy-2-ethylhexanoate as a polymerization initiator. The reaction was carried out at 85 ° C. for 10 hours in 20 parts by mass of toluene and 80 parts by mass of ethyl acetate.
  • (Meta) Acrylic resin solution 3 30 parts by mass of ethyl acrylate, 11 parts by mass of methyl acrylate, 26 parts by mass of -2-ethylhexyl acrylate, 7 parts by mass of 2-hydroxyethyl mecrylate, and 0.8 parts by mass of a benzoyl peroxide-based polymerization initiator as a polymerization initiator.
  • the parts were reacted at 80 ° C. for 9 hours in 7 parts by mass of toluene and 50 parts by mass of ethyl acetate. After completion of the reaction, the obtained solution was cooled, and 25 parts by mass of toluene was added to the cooled solution to obtain a (meth) acrylic resin solution 3.
  • ⁇ Adhesive film for evaluation of elongation at break> By adding the additives shown in Table 1 to the acrylic resin solution, a pressure-sensitive adhesive coating liquid for the pressure-sensitive adhesive resin layer was prepared. This coating liquid was applied to the mold release-treated surface of the polyethylene terephthalate film (separator) that had been mold-released with silicone, and dried at 120 ° C. for 3 minutes to form an adhesive resin layer having a thickness of 20 ⁇ m.
  • a corona-treated surface of a corona-treated ethylene-vinyl acetate copolymer extruded film (MFR: 1.7 g / 10 min, vinyl acetate content: 9% by mass, thickness: 140 ⁇ m) is bonded onto the adhesive resin layer. Obtained a laminate. Then, the obtained laminate was heated in an oven at 40 ° C. for 3 days and aged.
  • a pressure-sensitive adhesive coating liquid for the pressure-sensitive adhesive resin layer was prepared.
  • This coating liquid was applied to a polyethylene terephthalate film (separator) that had been subjected to a silicone mold release treatment. Then, it was dried at 120 ° C. for 3 minutes to form an adhesive resin layer having a thickness of 20 ⁇ m, which was attached to the base material layer.
  • the base material layers 1 and 2 were bonded to the corona-treated surface.
  • the separator was peeled off and bonded to the acrylic layer side. The obtained laminate was heated in an oven at 40 ° C. for 3 days and aged.
  • ⁇ Evaluation method> Breaking elongation of the adhesive resin layer after UV curing High-pressure mercury from the ethylene-vinyl acetate copolymer extruded film side of the adhesive film for evaluating breaking elongation to the adhesive resin layer in an environment of 25 ° C.
  • ultraviolet rays having a main wavelength of 365 nm were irradiated with an irradiation intensity of 100 mW / cm 2 and an ultraviolet amount of 1080 mJ / cm 2 . Then, it was cut into a length of 110 mm and a width of 10 mm, and the polyethylene terephthalate film as a separator was peeled off from the laminate.
  • the adhesive resin layer was chucked together with an ethylene-vinyl acetate copolymer extruded film with a tensile tester (Shimadzu Corporation, product name: Autograph AGS-X) so that the initial chuck distance Lo was 50 mm. ..
  • the sample was pulled at a speed of 30 mm / min, and the point at which fracture was visually observed in the adhesive resin layer was defined as the fracture point, and the distance between the chucks at that time was defined as L.
  • the elongation at break (%) was determined by (L-Lo) / Lo ⁇ 100 (%).
  • Adhesive strength evaluation Adhesive wafer: The mirror surface of the silicon mirror wafer (4-inch single-sided mirror wafer) was ozone-cleaned with a UV ozone cleaning device (UV-208, manufactured by Technovision Co., Ltd.) (ozone treatment time: 60 seconds). Then, the wafer mirror surface was wiped off with ethanol to obtain an adherend wafer.
  • UV ozone cleaning device UV-208, manufactured by Technovision Co., Ltd.
  • Adhesive strength before UV irradiation In an environment of 23 ° C. and 50% RH, the adhesive film for adhesive strength evaluation is cut into a width of 50 mm, the separator is peeled off, and the adhesive film is passed through the adhesive resin layer using a hand roller to the adherend wafer. It was attached to a mirror surface and left for 1 hour. After leaving it to stand, a tensile tester (Shimadzu Corporation, product name: Autograph AGS-X) is used to pinch one end of the adhesive film, and the peeling angle is 180 degrees and the peeling speed is 300 mm / min. The adhesive film was peeled off from the surface. The stress at that time was measured and converted to N / 25 mm to determine the adhesive strength.
  • a tensile tester Shiadzu Corporation, product name: Autograph AGS-X
  • Adhesive strength after irradiation with ultraviolet rays Under an environment of 23 ° C. and 50% RH, the adhesive film for adhesive strength evaluation is cut into a width of 50 mm, the separator is peeled off, and the adhesive film is passed through the adhesive resin layer using a hand roller. Then, it was attached to the mirror surface of the adherend wafer and left for 1 hour. After being left to stand, the adhesive film was irradiated with ultraviolet rays having a main wavelength of 365 nm at an irradiation intensity of 100 mW / cm 2 and an ultraviolet amount of 1080 mJ / cm 2 under an environment of 25 ° C.
  • Adhesive residue evaluation The adherend wafer after the peeling was visually observed and evaluated according to the following criteria. ⁇ (Good): No glue residue confirmed ⁇ (Bad): No glue residue confirmed
  • Evaluation wafer 2 Using a dicing saw, a first-step half-cut was performed on the mirror surface of a mirror wafer (8-inch mirror wafer, diameter: 200 ⁇ 0.5 mm, thickness: 725 ⁇ 50 ⁇ m, single-sided mirror) (blade: Z09-SD2000). -Y1 58 x 0.25A x 40 x 45E-L, chip size: 5 mm x 8 mm, depth of cut: 15 ⁇ m, blade rotation speed: 30,000 rpm). When observed with an optical microscope, the calf width was 60 ⁇ m.
  • UV irradiation and peeling of the adhesive film for evaluation of pre-dicing were performed, and the adhesive residue after the pre-dicing method was evaluated.
  • an ultraviolet ray having a main wavelength of 365 nm was irradiated with an irradiation intensity of 100 mW / cm 2 using a high-pressure mercury lamp in an environment of 25 ° C., and an ultraviolet ray amount of 1080 mJ / cm 2 was irradiated to the adhesive film for dicing evaluation.
  • the adhesive film for pre-dicing evaluation was peeled off by the following procedure.
  • a dicing tape (used as a mounting tape) prepared separately is passed through the adhesive surface of the dicing tape to form an 8-inch wafer ring frame and the above-mentioned individual pieces. It was attached to the wafer side of the diced wafer.
  • a tape peeling machine manufactured by Nitto Denko Corporation, HR3000III
  • the adhesive film for advanced dicing evaluation was peeled off from the wafer notch portion by a peeling tape (manufactured by Lasting System Co., Ltd., PET38REL).
  • the device peelability was evaluated according to the following criteria.
  • the adhesive residue on the individualized wafer after the pre-dicing method was evaluated using an optical microscope (manufactured by Olympus Corporation) according to the following criteria. ⁇ (Good): No glue residue confirmed ⁇ (Bad): No glue residue confirmed
  • Example 1 6.9 parts by mass of 2,2-dimethoxy-2-phenylacetophenone (manufactured by IGM, trade name: Omnirad 651) as a photoinitiator with respect to 100 parts by mass of (meth) acrylic resin solution 1 (solid content). 0.93 parts by mass of an isocyanate-based cross-linking agent (manufactured by Mitsui Chemicals, Inc., trade name: Olestar P49-75S) was added to obtain a pressure-sensitive adhesive coating liquid 1 for a pressure-sensitive adhesive resin layer.
  • an adhesive film for evaluation of breaking elongation, an adhesive film for evaluation of adhesive strength, and an adhesive film for evaluation of pre-dicing were produced.
  • the breaking elongation of the adhesive material after UV curing, the adhesive strength evaluation, and the pre-dicing method evaluation were carried out. The results are shown in Table 1.
  • Example 2 to 10 and Comparative Examples 1 and 2 Adhesive films were prepared in the same manner as in Example 1 except that the types of the adhesive resin layer and the base material layer were changed to those shown in Table 1. Moreover, each evaluation was performed in the same manner as in Example 1. The results obtained are shown in Table 1. The compounds listed in Table 1 are as follows.
  • Omnirad 651 (manufactured by IGM): 2,2-dimethoxy-2-phenylacetophenone Omnirad 369 (manufactured by IGM): 2-benzyl-2-dimethylamino-4'-morpholinobtyrophenone Aronix M400 (manufactured by Toa Synthetic Co., Ltd.): Mixture of dipentaerythritol pentaacrylate and dipentaerythritol hexaacrylate NK ester AD-TMP (manufactured by Shin Nakamura Chemical Industry Co., Ltd.): Ditrimethylol propanetetraacrylate
  • Base material layer Adhesive resin layer 30 Electronic components 30A Circuit forming surface 50 Adhesive film 100 Structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

La présente invention concerne un procédé de production d'un dispositif électronique comprenant au moins : une étape (A) permettant de préparer une structure (100) qui comprend un composant électronique (30) qui présente une surface de formation de circuit (30A) et un film adhésif (50) qui est collé sur la surface de formation de circuit (30A) du composant électronique (30) ; une étape (B) permettant d'affuter le dos d'une surface du composant électronique (30), ladite surface se trouvant sur le côté opposé à la surface de formation de circuit (30A) ; et une étape (C) permettant d'éliminer le film adhésif (50) du composant électronique (30) après l'exposition du film adhésif (50) à la lumière ultraviolette. Par rapport à ce procédé de production d'un dispositif électronique, le film adhésif (50) comprend une couche de matériau de base (10) et une couche de résine adhésive durcissable aux ultraviolets (20) qui est disposée sur une surface de la couche de matériau de base (10), et l'allongement à la rupture de la couche de résine adhésive (20) est de 20 % à 200 % après avoir été exposée à un rayonnement de lumière ultraviolette à l'étape (C).
PCT/JP2021/021873 2020-06-10 2021-06-09 Procédé de production de dispositif électronique WO2021251422A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020227042840A KR20230007493A (ko) 2020-06-10 2021-06-09 전자 장치의 제조 방법
JP2022530601A JP7440633B2 (ja) 2020-06-10 2021-06-09 電子装置の製造方法
CN202180041382.0A CN115699263A (zh) 2020-06-10 2021-06-09 电子装置的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-101120 2020-06-10
JP2020101120 2020-06-10

Publications (1)

Publication Number Publication Date
WO2021251422A1 true WO2021251422A1 (fr) 2021-12-16

Family

ID=78845737

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2021/021873 WO2021251422A1 (fr) 2020-06-10 2021-06-09 Procédé de production de dispositif électronique

Country Status (5)

Country Link
JP (1) JP7440633B2 (fr)
KR (1) KR20230007493A (fr)
CN (1) CN115699263A (fr)
TW (1) TW202204561A (fr)
WO (1) WO2021251422A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002053819A (ja) * 2000-08-08 2002-02-19 Mitsui Chemicals Inc 半導体ウエハ表面保護用粘着フィルム及びそれを用いる半導体ウエハ表面の保護方法
JP2009035635A (ja) * 2007-08-01 2009-02-19 Nitto Denko Corp 非汚染性熱剥離型粘着シート
JP2009138183A (ja) * 2007-11-12 2009-06-25 Lintec Corp 粘着シート
WO2009110426A1 (fr) * 2008-03-03 2009-09-11 リンテック株式会社 Feuille adhésive
WO2017061132A1 (fr) * 2015-10-05 2017-04-13 リンテック株式会社 Feuille pour traitement de semi-conducteurs
WO2019181731A1 (fr) * 2018-03-20 2019-09-26 リンテック株式会社 Bande adhésive et procédé de production de dispositif à semi-conducteur

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5582836B2 (ja) * 2010-03-26 2014-09-03 古河電気工業株式会社 ダイシング・ダイボンディングテープ
JP6059499B2 (ja) 2012-10-05 2017-01-11 リンテック株式会社 表面保護シート
JP6287200B2 (ja) 2013-12-27 2018-03-07 日立化成株式会社 ダイシング・ダイボンディング一体型テープ用ダイシングテープ
JP5823591B1 (ja) 2014-10-01 2015-11-25 古河電気工業株式会社 半導体ウエハ表面保護用粘着テープおよび半導体ウエハの加工方法
CN107112230A (zh) 2015-03-16 2017-08-29 古河电气工业株式会社 半导体晶圆加工用粘合带

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002053819A (ja) * 2000-08-08 2002-02-19 Mitsui Chemicals Inc 半導体ウエハ表面保護用粘着フィルム及びそれを用いる半導体ウエハ表面の保護方法
JP2009035635A (ja) * 2007-08-01 2009-02-19 Nitto Denko Corp 非汚染性熱剥離型粘着シート
JP2009138183A (ja) * 2007-11-12 2009-06-25 Lintec Corp 粘着シート
WO2009110426A1 (fr) * 2008-03-03 2009-09-11 リンテック株式会社 Feuille adhésive
WO2017061132A1 (fr) * 2015-10-05 2017-04-13 リンテック株式会社 Feuille pour traitement de semi-conducteurs
WO2019181731A1 (fr) * 2018-03-20 2019-09-26 リンテック株式会社 Bande adhésive et procédé de production de dispositif à semi-conducteur

Also Published As

Publication number Publication date
TW202204561A (zh) 2022-02-01
CN115699263A (zh) 2023-02-03
JP7440633B2 (ja) 2024-02-28
JPWO2021251422A1 (fr) 2021-12-16
KR20230007493A (ko) 2023-01-12

Similar Documents

Publication Publication Date Title
WO2021215247A1 (fr) Film adhésif de meulage arrière, et procédé de fabrication de dispositif électronique
WO2021251422A1 (fr) Procédé de production de dispositif électronique
WO2021251420A1 (fr) Procédé de production de dispositif électronique
WO2022019166A1 (fr) Procédé de production de dispositif électronique
WO2022019160A1 (fr) Procédé de production d'un dispositif électronique
WO2022019158A1 (fr) Film adhésif pour meulage arrière et procédé de fabrication de dispositif électronique
WO2022250128A1 (fr) Film adhésif d'affûtage de dos et procédé de production de dispositif électronique
WO2022250137A1 (fr) Procédé de production de dispositif électronique
WO2022250129A1 (fr) Procédé de fabrication de dispositif électronique
WO2022250138A1 (fr) Film adhésif pour réaliser un affûtage du dos et procédé de production pour dispositif électronique
WO2022250131A1 (fr) Procédé de production de dispositif électronique
WO2022250132A1 (fr) Procédé de production de dispositif électronique
WO2022250133A1 (fr) Procédé de fabrication de dispositif électronique
WO2022250136A1 (fr) Procédé de production de dispositif électronique
WO2022250130A1 (fr) Film adhésif pour rectification et procédé de fabrication de dispositif électronique

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21822351

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20227042840

Country of ref document: KR

Kind code of ref document: A

Ref document number: 2022530601

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21822351

Country of ref document: EP

Kind code of ref document: A1