WO2021248586A1 - Manufacturing method for lcp substrate - Google Patents

Manufacturing method for lcp substrate Download PDF

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Publication number
WO2021248586A1
WO2021248586A1 PCT/CN2020/099310 CN2020099310W WO2021248586A1 WO 2021248586 A1 WO2021248586 A1 WO 2021248586A1 CN 2020099310 W CN2020099310 W CN 2020099310W WO 2021248586 A1 WO2021248586 A1 WO 2021248586A1
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WO
WIPO (PCT)
Prior art keywords
layer circuit
circuit board
inner layer
manufacturing
lcp substrate
Prior art date
Application number
PCT/CN2020/099310
Other languages
French (fr)
Chinese (zh)
Inventor
陈康
陈勇利
韩佳明
Original Assignee
瑞声声学科技(深圳)有限公司
瑞声精密制造科技(常州)有限公司
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Application filed by 瑞声声学科技(深圳)有限公司, 瑞声精密制造科技(常州)有限公司 filed Critical 瑞声声学科技(深圳)有限公司
Publication of WO2021248586A1 publication Critical patent/WO2021248586A1/en

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Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4611Manufacturing multilayer circuits by laminating two or more circuit boards
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/227Drying of printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/26Cleaning or polishing of the conductive pattern

Definitions

  • the present invention relates to the technical field of circuit boards, in particular to a manufacturing method of an LCP substrate.
  • the main high-frequency substrates used in the industry are mainly LCP (Liquid Crystal Polymer (liquid crystal polymer) substrate, and the production of LCP multilayer board requires a lamination process, in order to improve the interlayer bonding force, the copper foil needs to be roughened.
  • LCP Liquid Crystal Polymer
  • the pre-treatment of LCP non-adhesive pressing is mainly blackening or browning, and a dense passivation layer is formed on the copper surface to enhance the bonding force of the inner layer of the multilayer board.
  • browning or blackening will generate copper oxides while increasing the roughness of the copper surface, which will cause the conductivity of copper to deteriorate.
  • the purpose of the present invention is to disclose a manufacturing method of an LCP substrate.
  • a manufacturing method of an LCP substrate includes: providing an inner layer circuit board and an outer layer circuit board; etching the inner layer circuit board to release the copper layer Circuit; Sputtering the copper layer circuit of the inner layer circuit board by plasma; microetching the copper layer circuit of the inner layer circuit board after sputtering; the inner layer circuit board and the outer layer circuit after the microetching treatment
  • the outer circuit board of the board is laminated to form an LCP substrate.
  • the step of plasma sputtering the copper layer circuit of the inner layer circuit board includes: plasma sputtering the surface of the copper layer circuit to roughen the surface of the copper layer circuit.
  • the step of the micro-etching treatment includes: performing micro-etching on the surface of the roughened copper layer circuit to form a microscopic roughening.
  • the micro-etching is to place the inner circuit board in a micro-etcher, and use a micro-etching solution for etching treatment, the micro-etching solution includes sulfuric acid, sodium persulfate and copper ions; the concentration of the sulfuric acid is 3 %-5%, the content of sodium persulfate is controlled within 50g/L-70g/L, and the content of copper ions is less than 25g/L.
  • the step of the microetching treatment further includes: washing the copper layer of the inner layer circuit board after the microetching with water; and acid washing the copper layer of the inner layer circuit board after the water washing to remove the copper. Layer of oxide on the surface of the circuit.
  • a sulfuric acid solution with a concentration of 3% to 5% is used for pickling at a temperature of 25°C to 35°C.
  • the step of the microetching treatment further includes: washing the copper layer lines of the inner layer circuit board after the acid washing with water; and performing anti-oxidation treatment on the copper layer circuits of the inner layer circuit board after the water washing to remove the inner layer. Pickling liquid on the surface of the circuit board.
  • the anti-oxidation treatment is an anti-oxidation treatment of the inner layer circuit board in a room temperature environment by using an anti-oxidant.
  • the step of the micro-etching treatment further includes: washing the inner layer circuit board after the anti-oxidation treatment; drying the inner layer circuit board after the water washing, and the temperature of the drying treatment is 75 °C to 85°C.
  • the inner layer circuit board is pressed against the outer layer circuit board within 24 hours after plasma sputtering. combine.
  • plasma sputtering and micro-etching treatment cooperate with each other to improve the roughness of the copper layer circuit.
  • the advantage of this method is that while increasing the roughness of the copper layer line, it does not introduce oxides to the copper layer line.
  • FIG. 1 is a schematic flow chart of the manufacturing method of the LCP substrate provided by the present invention.
  • Fig. 2 is a schematic diagram of the structure of the inner layer circuit board provided by the present invention.
  • FIG. 3 is a schematic diagram of the structure of the inner layer circuit board provided by the present invention after ionomer sputtering.
  • FIG. 4 is a schematic diagram of the structure of the inner layer circuit board provided by the present invention after microetching.
  • FIG. 5 is a schematic diagram of the structure of the inner layer circuit board pressed and bonded with the outer layer circuit board after micro-etching provided by the present invention.
  • FIG. 1 is a schematic flow chart of the manufacturing method of the LCP substrate 100 provided by the present invention
  • FIG. 2 is a schematic structural view of the inner layer circuit board 10 provided by the present invention
  • FIG. 3 is the inner layer provided by the present invention.
  • FIG. 4 is a schematic diagram of the structure of the inner layer circuit board 10 provided by the present invention after microetching
  • FIG. 5 is a schematic view of the structure of the inner layer wiring board 10 provided by the present invention after microetching.
  • the present invention provides a manufacturing method of the LCP substrate 100.
  • the manufacturing method of the LCP substrate 100 includes at least the following five steps.
  • S101 Provide an inner layer circuit board 10 and an outer layer circuit board 20.
  • the LCP substrate 100 of the present application is a multilayer circuit board.
  • the LCP substrate 100 includes an inner layer circuit board 10 and an outer layer circuit board 20.
  • the inner layer circuit board 10 and the outer layer circuit board 20 are manufactured separately and then pressed together.
  • the inner layer circuit board 10 is etched to release the copper layer circuit 14.
  • the specific steps can be to first coat the copper layer with insulating material according to the pattern of the copper layer circuit 14, and then etch the circuit layer without insulating material, and the circuit layer coated with insulating material is retained and the insulating material is removed to obtain ⁇ 14 ⁇ Copper layer line 14.
  • S103 Sputtering the inner layer circuit board 10 by plasma.
  • the copper layer circuit 14 of the inner layer circuit board 10 is sputtered by plasma to roughen the copper layer circuit 14 and increase the contact area of the copper layer circuit 14.
  • the purpose of the roughening treatment of the plasma sputtering copper layer circuit 14 is to increase the roughness of the copper layer circuit 14 to increase the bonding force of the bonding, printing, welding and other processes.
  • the copper after the plasma sputtering copper layer circuit 14 treatment The surface tension of the layer circuit 14 will increase, and the plasma generated by the reactive gas can also increase the surface roughness.
  • the working principle of plasma sputtering The electric energy generated by the radio frequency voltage generator forms an electric field between the electrodes.
  • the mixed gas entering the cavity is acted by the electric field and is excited to the plasma to generate free radicals and charged ions.
  • These free radicals and charged ions The ions are mixed with the original gas, and the charged ions and molecules can do physical work through sputtering, and through physical bombardment, the plasma process can complete the surface roughening effect.
  • S104 Perform micro-etching treatment on the inner layer circuit board 10 after sputtering.
  • the inner layer circuit board 10 after sputtering is subjected to micro-etching treatment.
  • the purpose of the micro-etching is to remove the oxide layer on the surface of the copper layer circuit 14 to clean the surface of the board and form a microscopic roughening to enhance the bonding force of the surface of the board.
  • the surface of the roughened copper layer circuit 14 is micro-etched to form a microscopic roughening.
  • the further steps of the micro-etching treatment include: A) Put the inner layer circuit board 10 into a micro-etching device and use a micro-etching solution to perform etching.
  • the micro-etching solution includes sulfuric acid, sodium persulfate and copper ions.
  • the concentration of sulfuric acid is controlled between 3%-5%
  • the content of sodium persulfate is controlled between 50g/L-70g/L
  • the content of copper ions is controlled less than 25g/L
  • the reaction temperature is between 28°C and 32°C
  • the upper spray The pressure is controlled at 1.3Kg/cm 2 -1.7Kg/cm 2
  • the downward spray pressure is controlled at 1.1Kg/cm 2 -1.5Kg/cm 2 .
  • the flow rate of the inner layer circuit board 10 in the microetcher will affect the etching rate of the inner layer circuit board 10.
  • the microetch rate of the inner layer circuit board 10 is 1.5 ⁇ m/min to 2.5 ⁇ m/min.
  • the inner layer circuit board 10 after microetching is washed with water. In order to ensure the washing effect, it is divided into three steps. The inner layer circuit board 10 is washed with water for the first time, the second time, and the third time.
  • the inner layer circuit board 10 after the step B is put into an acidic solution for pickling to remove oxides and dirt on the surface of the copper layer circuit 14 and improve the conductivity of the copper layer circuit 14.
  • Sulfuric acid solution can be used for pickling.
  • concentration of sulfuric acid is controlled between 3% and 5%
  • the reaction temperature is between 25°C and 35°C
  • the upper spray pressure is controlled at 1.3 Kg/cm 2 -1.7 Kg/cm 2
  • the lower spray pressure is controlled at 1.1 Kg/cm 2- 1.5 Kg/cm 2 .
  • the inner layer circuit board 10 after washing with water is subjected to an anti-oxidation treatment to completely remove the acid lotion remaining on the surface of the inner layer circuit board 10 to achieve an anti-oxidation effect.
  • antioxidants for anti-oxidation treatment at room temperature.
  • concentration of antioxidant is controlled between 0.5%-1.5%
  • the upper spray pressure is controlled at 1.3 Kg/cm 2 -1.7 Kg/cm 2
  • the lower spray pressure is controlled at 1.1 Kg/cm 2 -1.5 Kg/cm 2 .
  • the inner layer circuit board 10 after the anti-oxidation treatment is washed with water to remove the residual antioxidant solution used in the anti-oxidation treatment process.
  • the inner layer circuit board 10 is washed with water for the first time. , The second washing, the third washing.
  • the inner layer circuit board 10 after washing is dried.
  • the function of the drying treatment is to dry the moisture on the inner layer circuit board 10 so that the copper layer circuit 14 will not be oxidized in the air due to water as a medium.
  • the drying method can be to stand the inner layer circuit board 10 in a dry environment, and the drying method can also use a fan to blow air on the inner layer circuit board 10, and the temperature is controlled at 75°C to 85°C.
  • the inner layer circuit board 10 includes a first base layer 12 and copper layer circuits 14 arranged on opposite sides of the first base layer 12.
  • the material of the first base layer 12 may be LCP.
  • the number of the outer layer circuit boards 20 may be two, and the two outer layer circuit boards 20 are press-fitted and connected to the copper layer circuit 14 respectively.
  • the outer circuit board 20 includes a second base layer 22 and an outer circuit 24, and a side of the second base layer 22 away from the outer circuit 24 is press-fitted and connected to the copper layer circuit 14.
  • the material of the second base layer 22 may be LCP.
  • the pressure bonding of the inner layer circuit board 10 and the outer layer circuit board should be controlled within 24 hours of plasma sputtering to solve the problem of timeliness of plasma sputtering. Because the physical function of plasma sputtering is to reshape and roughen the surface of the material, the protrusions on the surface increase after etching, which increases the surface area.
  • plasma sputtering and micro-etching treatment cooperate with each other to increase the roughness of the copper layer circuit 14.
  • the advantage of this method is that while increasing the roughness of the copper layer circuit 14, no oxide is introduced onto the copper layer circuit 14.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

Disclosed is a manufacturing method for an LCP substrate. The manufacturing method for the LCP substrate comprises: providing an inner-layer circuit board and an outer-layer circuit board; etching the inner-layer circuit board, and releasing a copper-layer circuit; sputtering the inner-layer circuit board by means of plasma; performing micro-etching treatment on the sputtered inner-layer circuit board; and laminating the inner-layer circuit board and the outer-layer circuit board which are subjected to the micro-etching treatment to form the LCP substrate.

Description

LCP基板的制作方法Manufacturing method of LCP substrate 技术领域Technical field
本发明涉及电路板的技术领域,尤其涉及一种LCP基板的制作方法。The present invention relates to the technical field of circuit boards, in particular to a manufacturing method of an LCP substrate.
背景技术Background technique
随着5G通讯和毫米波的快速发展,高频高速FPC的需求量不断增加。目前,业内主要使用的高频基板主要是LCP(Liquid Crystal Polymer,液晶聚合物)基板,而制作LCP多层板时需要经过压合工序,为了提高层间结合力需要对铜箔进行粗化处理。With the rapid development of 5G communications and millimeter waves, the demand for high-frequency and high-speed FPCs continues to increase. At present, the main high-frequency substrates used in the industry are mainly LCP (Liquid Crystal Polymer (liquid crystal polymer) substrate, and the production of LCP multilayer board requires a lamination process, in order to improve the interlayer bonding force, the copper foil needs to be roughened.
目前LCP无胶压合的前处理主要是黑化或者棕化,在铜表面生成致密的钝化层以增强多层板内层结合力。但是棕化或黑化在提高铜面粗糙度的同时均会生成铜的氧化物,会造成铜的导电性变差。At present, the pre-treatment of LCP non-adhesive pressing is mainly blackening or browning, and a dense passivation layer is formed on the copper surface to enhance the bonding force of the inner layer of the multilayer board. However, browning or blackening will generate copper oxides while increasing the roughness of the copper surface, which will cause the conductivity of copper to deteriorate.
因而,有必要提供一种LCP基板的制作方法以解决上述的问题。Therefore, it is necessary to provide a method for manufacturing an LCP substrate to solve the above-mentioned problems.
技术问题technical problem
本发明的目的公开一种LCP基板的制作方法。The purpose of the present invention is to disclose a manufacturing method of an LCP substrate.
技术解决方案Technical solutions
本发明的目的采用如下技术方案实现:一种LCP基板的制作方法,所述LCP基板制作方法包括:提供内层线路板和外层线路板;对所述内层线路板进行蚀刻,释放铜层线路;通过等离子体溅射所述内层线路板铜层线路;对溅射后的所述内层线路板铜层线路进行微蚀处理;将微蚀处理后的内层线路板与外层电路板外层线路板压合形成LCP基板。The object of the present invention is achieved by adopting the following technical solutions: a manufacturing method of an LCP substrate, the manufacturing method of the LCP substrate includes: providing an inner layer circuit board and an outer layer circuit board; etching the inner layer circuit board to release the copper layer Circuit; Sputtering the copper layer circuit of the inner layer circuit board by plasma; microetching the copper layer circuit of the inner layer circuit board after sputtering; the inner layer circuit board and the outer layer circuit after the microetching treatment The outer circuit board of the board is laminated to form an LCP substrate.
优选地,所述等离子体溅射所述内层线路板铜层线路的步骤,包括:等离子体溅射铜层线路的表面以使铜层线路表面粗化。Preferably, the step of plasma sputtering the copper layer circuit of the inner layer circuit board includes: plasma sputtering the surface of the copper layer circuit to roughen the surface of the copper layer circuit.
优选地,所述微蚀处理的步骤,包括:对所述粗化后的铜层线路表面进行微蚀以使其形成微观粗化。Preferably, the step of the micro-etching treatment includes: performing micro-etching on the surface of the roughened copper layer circuit to form a microscopic roughening.
优选地,所述微蚀是将内层线路板置于微蚀器中,采用微蚀液进行蚀刻处理,所述微蚀液包括硫酸、过硫酸钠和铜离子;所述硫酸的浓度为3%-5%,过硫酸钠的含量控制在50g/L-70g/L,铜离子的含量小于25g/L。Preferably, the micro-etching is to place the inner circuit board in a micro-etcher, and use a micro-etching solution for etching treatment, the micro-etching solution includes sulfuric acid, sodium persulfate and copper ions; the concentration of the sulfuric acid is 3 %-5%, the content of sodium persulfate is controlled within 50g/L-70g/L, and the content of copper ions is less than 25g/L.
优选地,所述微蚀处理的步骤,还包括:对所述微蚀后的内层线路板铜层线路进行水洗;对水洗后的内层线路板铜层线路进行酸洗以去除所述铜层线路表面的氧化物。Preferably, the step of the microetching treatment further includes: washing the copper layer of the inner layer circuit board after the microetching with water; and acid washing the copper layer of the inner layer circuit board after the water washing to remove the copper. Layer of oxide on the surface of the circuit.
优选地,所述酸洗步骤中,采用浓度为3%至5%的硫酸溶液在25℃至35℃温度下进行酸洗。Preferably, in the pickling step, a sulfuric acid solution with a concentration of 3% to 5% is used for pickling at a temperature of 25°C to 35°C.
优选地,所述微蚀处理的步骤还包括:对所述酸洗后的内层线路板铜层线路进行水洗;对水洗之后的内层线路板铜层线路进行抗氧化处理以清除所述内层线路板表面的酸洗液。Preferably, the step of the microetching treatment further includes: washing the copper layer lines of the inner layer circuit board after the acid washing with water; and performing anti-oxidation treatment on the copper layer circuits of the inner layer circuit board after the water washing to remove the inner layer. Pickling liquid on the surface of the circuit board.
优选地,所述抗氧化处理为采用抗氧化剂对内层线路板在室温环境下进行抗氧化处理。Preferably, the anti-oxidation treatment is an anti-oxidation treatment of the inner layer circuit board in a room temperature environment by using an anti-oxidant.
优选地,所述微蚀处理的步骤还包括:对所述抗氧化处理后的内层线路板进行水洗;对水洗后的内层线路板进行烘干处理,所述烘干处理的温度为75℃至85℃。Preferably, the step of the micro-etching treatment further includes: washing the inner layer circuit board after the anti-oxidation treatment; drying the inner layer circuit board after the water washing, and the temperature of the drying treatment is 75 ℃ to 85℃.
优选地,在将微蚀处理后的内层线路板与外层线路板压合形成LCP基板的步骤中,所述内层线路板在等离子体溅射后24小时内与外层线路板进行压合。Preferably, in the step of pressing the microetched inner layer circuit board and the outer layer circuit board to form the LCP substrate, the inner layer circuit board is pressed against the outer layer circuit board within 24 hours after plasma sputtering. combine.
有益效果Beneficial effect
本发明相对于现有技术而言,在本申请中,等离子体溅射和微蚀处理相互配合提高铜层线路的粗糙度。这种方法的好处在于在提高铜层线路粗糙度的同时不会引入氧化物至铜层线路上。Compared with the prior art, in the present invention, plasma sputtering and micro-etching treatment cooperate with each other to improve the roughness of the copper layer circuit. The advantage of this method is that while increasing the roughness of the copper layer line, it does not introduce oxides to the copper layer line.
附图说明Description of the drawings
图1为本发明提供的LCP基板的制作方法的流程示意图。FIG. 1 is a schematic flow chart of the manufacturing method of the LCP substrate provided by the present invention.
图2为本发明提供的内层线路板的结构示意图。Fig. 2 is a schematic diagram of the structure of the inner layer circuit board provided by the present invention.
图3为本发明提供的内层线路板离子体溅射后的结构示意图。FIG. 3 is a schematic diagram of the structure of the inner layer circuit board provided by the present invention after ionomer sputtering.
图4为本发明提供的内层线路板微蚀后的结构示意图。4 is a schematic diagram of the structure of the inner layer circuit board provided by the present invention after microetching.
图5为本发明提供的内层线路板微蚀后与外层线路板压合的结构示意图。FIG. 5 is a schematic diagram of the structure of the inner layer circuit board pressed and bonded with the outer layer circuit board after micro-etching provided by the present invention.
本发明的实施方式Embodiments of the present invention
下面结合附图和实施方式对本发明作进一步说明。The present invention will be further described below in conjunction with the drawings and embodiments.
需要说明,本发明实施例中所有方向性指示(诸如上、下、左、右、前、后……)仅用于解释在某一特定姿态(如附图所示)下各部件之间的相对位置关系、运动情况等,如果该特定姿态发生改变时,则该方向性指示也相应地随之改变。It should be noted that all directional indicators (such as up, down, left, right, front, back...) in the embodiments of the present invention are only used to explain the relationship between components in a specific posture (as shown in the accompanying drawings). If the relative position relationship, movement situation, etc. change, the directional indication will change accordingly.
还需要说明的是,当元件被称为“固定于”或“设置于”另一个元件上时,它可以直接在另一个元件上或者可能同时存在居中元件。当一个元件被称为是“连接”另一个元件,它可以是直接连接另一个元件或者可能同时存在居中元件。It should also be noted that when an element is referred to as being "fixed on" or "disposed on" another element, it may be directly on the other element or there may be a centering element at the same time. When an element is said to be "connected" to another element, it can be directly connected to the other element or an intermediate element may be present at the same time.
另外,在本发明中涉及“第一”、“第二”等的描述仅用于描述目的,而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。另外,各个实施例之间的技术方案可以相互结合,但是必须是以本领域普通技术人员能够实现为基础,当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在,也不在本发明要求的保护范围之内。In addition, the descriptions related to "first", "second", etc. in the present invention are only used for descriptive purposes, and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on what can be achieved by a person of ordinary skill in the art. When the combination of technical solutions is contradictory or cannot be achieved, it should be considered that such a combination of technical solutions does not exist. , Is not within the protection scope of the present invention.
请参阅图1至图5,图1为本发明提供的LCP基板100的制作方法的流程示意图,图2为本发明提供的内层线路板10的结构示意图,图3为本发明提供的内层线路板10离子体溅射后的结构示意图,图4为本发明提供的内层线路板10微蚀后的结构示意图,图5为本发明提供的内层线路板10微蚀后的结构示意图。Please refer to FIGS. 1 to 5. FIG. 1 is a schematic flow chart of the manufacturing method of the LCP substrate 100 provided by the present invention, FIG. 2 is a schematic structural view of the inner layer circuit board 10 provided by the present invention, and FIG. 3 is the inner layer provided by the present invention. The schematic diagram of the structure of the circuit board 10 after ion sputtering. FIG. 4 is a schematic diagram of the structure of the inner layer circuit board 10 provided by the present invention after microetching, and FIG. 5 is a schematic view of the structure of the inner layer wiring board 10 provided by the present invention after microetching.
本发明提供了LCP基板100的制作方法,该LCP基板100制作方法至少包括如下5个步骤。The present invention provides a manufacturing method of the LCP substrate 100. The manufacturing method of the LCP substrate 100 includes at least the following five steps.
S101:提供内层线路板10和外层线路板20。S101: Provide an inner layer circuit board 10 and an outer layer circuit board 20.
本申请的LCP基板100为多层电路板,LCP基板100包括内层线路板10和外层线路板20,内层线路板10和外层线路板20分开制作,然后压合在一起。The LCP substrate 100 of the present application is a multilayer circuit board. The LCP substrate 100 includes an inner layer circuit board 10 and an outer layer circuit board 20. The inner layer circuit board 10 and the outer layer circuit board 20 are manufactured separately and then pressed together.
S102:对内层线路板10进行蚀刻,释放铜层线路14。S102: Etching the inner layer circuit board 10 to release the copper layer circuit 14.
对内层线路板10进行蚀刻,释放铜层线路14。具体步骤可以是先在铜层上按照铜层线路14的图形涂覆绝缘材料,然后对没有涂覆绝缘材料的电路层进行蚀刻,涂覆有绝缘材料的电路层被保留下来去除绝缘材料从而得到铜层线路14。The inner layer circuit board 10 is etched to release the copper layer circuit 14. The specific steps can be to first coat the copper layer with insulating material according to the pattern of the copper layer circuit 14, and then etch the circuit layer without insulating material, and the circuit layer coated with insulating material is retained and the insulating material is removed to obtain铜层线14。 Copper layer line 14.
S103:通过等离子体溅射内层线路板10。S103: Sputtering the inner layer circuit board 10 by plasma.
通过等离子体溅射内层线路板10的铜层线路14以粗化铜层线路14,增大铜层线路14的接触面积。离子体溅射铜层线路14粗化处理的目的是提升铜层线路14的粗糙度,以增加粘接、印刷、焊接等工艺的结合力,经等离子体溅射铜层线路14处理后的铜层线路14表面张力会提升,活性气体所产生的等离子体也可以增加表面的粗糙度。The copper layer circuit 14 of the inner layer circuit board 10 is sputtered by plasma to roughen the copper layer circuit 14 and increase the contact area of the copper layer circuit 14. The purpose of the roughening treatment of the plasma sputtering copper layer circuit 14 is to increase the roughness of the copper layer circuit 14 to increase the bonding force of the bonding, printing, welding and other processes. The copper after the plasma sputtering copper layer circuit 14 treatment The surface tension of the layer circuit 14 will increase, and the plasma generated by the reactive gas can also increase the surface roughness.
等离子体溅射的工作原理:射频电压发生器产生的电能在电极间形成电场,进入腔体的混合气受到电场的作用,被激发至等离子体,产生自由基和带电离子,这些自由基和带电离子与原来的气体混合在一起,其中带电离子与分子通过溅射可以做物理功,通过物理轰击,等离子工艺可以完成表面粗化的效果。The working principle of plasma sputtering: The electric energy generated by the radio frequency voltage generator forms an electric field between the electrodes. The mixed gas entering the cavity is acted by the electric field and is excited to the plasma to generate free radicals and charged ions. These free radicals and charged ions The ions are mixed with the original gas, and the charged ions and molecules can do physical work through sputtering, and through physical bombardment, the plasma process can complete the surface roughening effect.
具体地,等离子体溅射铜层线路14的表面以使铜层线路14表面粗化。Specifically, plasma sputtering the surface of the copper layer circuit 14 to roughen the surface of the copper layer circuit 14.
S104:对溅射后的内层线路板10进行微蚀处理。S104: Perform micro-etching treatment on the inner layer circuit board 10 after sputtering.
对溅射后的内层线路板10进行微蚀处理,微蚀的目的是除去铜层线路14表面氧化层,使板材表面清洁,且形成微观粗化,增强板材表面的结合力。The inner layer circuit board 10 after sputtering is subjected to micro-etching treatment. The purpose of the micro-etching is to remove the oxide layer on the surface of the copper layer circuit 14 to clean the surface of the board and form a microscopic roughening to enhance the bonding force of the surface of the board.
具体地,对粗化后的铜层线路14表面进行微蚀以使其形成微观粗化。Specifically, the surface of the roughened copper layer circuit 14 is micro-etched to form a microscopic roughening.
微蚀处理进一步的步骤包括:A)将内层线路板10放入微蚀器中采用微蚀液进行蚀刻,微蚀液包括硫酸、过硫酸钠和铜离子。硫酸的浓度控制在3%-5%之间,过硫酸钠的含量控制在50g/L-70g/L,铜离子的含量控制在小于25g/L,反应温度在28℃至32℃,上喷压力控制在1.3Kg/cm 2-1.7Kg/cm 2,下喷压力控制在1.1Kg/cm 2-1.5Kg/cm 2The further steps of the micro-etching treatment include: A) Put the inner layer circuit board 10 into a micro-etching device and use a micro-etching solution to perform etching. The micro-etching solution includes sulfuric acid, sodium persulfate and copper ions. The concentration of sulfuric acid is controlled between 3%-5%, the content of sodium persulfate is controlled between 50g/L-70g/L, the content of copper ions is controlled less than 25g/L, the reaction temperature is between 28°C and 32°C, and the upper spray The pressure is controlled at 1.3Kg/cm 2 -1.7Kg/cm 2 , and the downward spray pressure is controlled at 1.1Kg/cm 2 -1.5Kg/cm 2 .
值得注意的是,内层线路板10在微蚀器中流动的速率会影响内层线路板10的蚀刻速率,在本实施例中,内层线路板10的微蚀速率为1.5µm/min至2.5µm/min。It is worth noting that the flow rate of the inner layer circuit board 10 in the microetcher will affect the etching rate of the inner layer circuit board 10. In this embodiment, the microetch rate of the inner layer circuit board 10 is 1.5 µm/min to 2.5µm/min.
B)对微蚀后的内层线路板10进行水洗。B) Wash the micro-etched inner circuit board 10 with water.
对微蚀后的内层线路板10进行水洗,为了保证水洗的效果,分为三个步骤,对内层线路板10进行第一次水洗、第二次水洗、第三次水洗。The inner layer circuit board 10 after microetching is washed with water. In order to ensure the washing effect, it is divided into three steps. The inner layer circuit board 10 is washed with water for the first time, the second time, and the third time.
C)对水洗后的内层线路板10进行酸洗以去除铜层线路14表面的氧化物。C) Pickling the inner layer circuit board 10 after washing with water to remove the oxide on the surface of the copper layer circuit 14.
将经过步骤B后的内层线路板10放入酸性溶液中,进行酸洗,以去除铜层线路14表面的氧化物及脏污,提高铜层线路14的导电性能。The inner layer circuit board 10 after the step B is put into an acidic solution for pickling to remove oxides and dirt on the surface of the copper layer circuit 14 and improve the conductivity of the copper layer circuit 14.
可采用硫酸溶液进行酸洗。硫酸的浓度控制在3%-5%之间,反应温度在25℃至35℃,上喷压力控制在1.3 Kg/cm 2-1.7 Kg/cm 2,下喷压力控制在1.1 Kg/cm 2-1.5 Kg/cm 2Sulfuric acid solution can be used for pickling. The concentration of sulfuric acid is controlled between 3% and 5%, the reaction temperature is between 25°C and 35°C, the upper spray pressure is controlled at 1.3 Kg/cm 2 -1.7 Kg/cm 2 , and the lower spray pressure is controlled at 1.1 Kg/cm 2- 1.5 Kg/cm 2 .
D)对酸洗后的内层线路板10进行水洗。D) Wash the inner circuit board 10 after pickling with water.
对酸洗后的内层线路板10进行水洗,去除残留的酸性溶液,为了保证水洗的效果,分为三个步骤,对内层线路板10进行第一次水洗、第二次水洗、第三次水洗。Wash the inner layer circuit board 10 after acid washing to remove the residual acid solution. In order to ensure the washing effect, it is divided into three steps. Time washing.
E)对水洗之后的内层线路板10进行抗氧化处理以清除内层线路板10表面的酸洗液。E) Perform anti-oxidation treatment on the inner layer circuit board 10 after washing to remove the pickling liquid on the surface of the inner layer circuit board 10.
对水洗之后的内层线路板10进行抗氧化处理以彻底清除内层线路板10表面上残留的酸洗液,以达到抗氧化作用。The inner layer circuit board 10 after washing with water is subjected to an anti-oxidation treatment to completely remove the acid lotion remaining on the surface of the inner layer circuit board 10 to achieve an anti-oxidation effect.
采用抗氧化剂在室温环境下进行抗氧化处理。抗氧化剂的浓度控制在0.5%-1.5%之间,上喷压力控制在1.3 Kg/cm 2-1.7 Kg/cm 2,下喷压力控制在1.1 Kg/cm 2-1.5 Kg/cm 2Use antioxidants for anti-oxidation treatment at room temperature. The concentration of antioxidant is controlled between 0.5%-1.5%, the upper spray pressure is controlled at 1.3 Kg/cm 2 -1.7 Kg/cm 2 , and the lower spray pressure is controlled at 1.1 Kg/cm 2 -1.5 Kg/cm 2 .
F)对抗氧化处理后的内层线路板10进行水洗。F) The inner layer circuit board 10 after the anti-oxidation treatment is washed with water.
对抗氧化处理后的内层线路板10进行水洗,去除残留的抗氧化处理过程所使用的抗氧化剂溶液,为了保证水洗的效果,分为三个步骤,对内层线路板10进行第一次水洗、第二次水洗、第三次水洗。The inner layer circuit board 10 after the anti-oxidation treatment is washed with water to remove the residual antioxidant solution used in the anti-oxidation treatment process. In order to ensure the washing effect, the inner layer circuit board 10 is washed with water for the first time. , The second washing, the third washing.
G)对水洗后的内层线路板10进行烘干处理。G) Drying the inner layer circuit board 10 after washing.
对水洗后的内层线路板10进行烘干处理。烘干处理作用是烘干内层线路板10上的水分,使铜层线路14不会在空气中因为水作为介质而发生氧化。The inner layer circuit board 10 after washing is dried. The function of the drying treatment is to dry the moisture on the inner layer circuit board 10 so that the copper layer circuit 14 will not be oxidized in the air due to water as a medium.
烘干的方法可以在干燥的环境下静置内层线路板10,烘干的方法也可以用风机对内层线路板10吹风,温度控制在75℃至85℃。The drying method can be to stand the inner layer circuit board 10 in a dry environment, and the drying method can also use a fan to blow air on the inner layer circuit board 10, and the temperature is controlled at 75°C to 85°C.
S105:将微蚀处理后的内层线路板10与外层线路板压合形成LCP基板100。S105: pressing the inner layer circuit board 10 after the microetching treatment and the outer layer circuit board to form the LCP substrate 100.
内层线路板10包括第一基层12和设置在第一基层12的相对两侧的铜层线路14。第一基层12的材质可以是LCP。The inner layer circuit board 10 includes a first base layer 12 and copper layer circuits 14 arranged on opposite sides of the first base layer 12. The material of the first base layer 12 may be LCP.
外层线路板20的数量可以是两个,两个外层线路板20分别与铜层线路14压合连接在一起。外层线路板20包括第二基层22和外线路24,第二基层22的远离外线路24的一侧与铜层线路14压合连接在一起。第二基层22的材质可以是LCP。内层线路板10与外层线路板的压合应该控制等离子体溅射24小时内进行压合,以解决等离子体溅射的时效性问题。因为等离子体溅射的物理作用是将材料表面改型粗化,蚀刻后表面的突起物增多,增大了表面积。如果暴露在有污染的空气中过长时间,混入灰尘、油污、杂质会导致等离子体溅射后的表面附着能力逐渐减低。另外,等离子体溅射的化学作用会引进含羧基和羟基等氧极性基团,这些活性分子具有时效性,容易与其他物质发生化学变化。The number of the outer layer circuit boards 20 may be two, and the two outer layer circuit boards 20 are press-fitted and connected to the copper layer circuit 14 respectively. The outer circuit board 20 includes a second base layer 22 and an outer circuit 24, and a side of the second base layer 22 away from the outer circuit 24 is press-fitted and connected to the copper layer circuit 14. The material of the second base layer 22 may be LCP. The pressure bonding of the inner layer circuit board 10 and the outer layer circuit board should be controlled within 24 hours of plasma sputtering to solve the problem of timeliness of plasma sputtering. Because the physical function of plasma sputtering is to reshape and roughen the surface of the material, the protrusions on the surface increase after etching, which increases the surface area. If exposed to contaminated air for too long, mixing of dust, oil, and impurities will cause the surface adhesion after plasma sputtering to gradually decrease. In addition, the chemical action of plasma sputtering introduces oxygen-containing polar groups such as carboxyl and hydroxyl groups. These active molecules are time-sensitive and are prone to chemical changes with other substances.
在本申请中,等离子体溅射和微蚀处理相互配合提高铜层线路14的粗糙度。这种方法的好处在于在提高铜层线路14粗糙度的同时不会引入氧化物至铜层线路14上。In the present application, plasma sputtering and micro-etching treatment cooperate with each other to increase the roughness of the copper layer circuit 14. The advantage of this method is that while increasing the roughness of the copper layer circuit 14, no oxide is introduced onto the copper layer circuit 14.
以上所述的仅是本发明的实施方式,在此应当指出,对于本领域的普通技术人员来说,在不脱离本发明创造构思的前提下,还可以做出改进,但这些均属于本发明的保护范围。The above are only the embodiments of the present invention. It should be pointed out here that for those of ordinary skill in the art, improvements can be made without departing from the inventive concept of the present invention, but these all belong to the present invention. The scope of protection.

Claims (10)

  1. 一种LCP基板的制作方法,其特征在于,所述LCP基板制作方法包括:A manufacturing method of an LCP substrate, characterized in that the manufacturing method of the LCP substrate includes:
    提供内层线路板和外层线路板;Provide inner circuit boards and outer circuit boards;
    对所述内层线路板进行蚀刻,释放铜层线路;Etching the inner layer circuit board to release the copper layer circuit;
    通过等离子体溅射所述内层线路板;Sputtering the inner layer circuit board by plasma;
    对溅射后的所述内层线路板进行微蚀处理;Microetching the inner layer circuit board after sputtering;
    将微蚀处理后的内层线路板与外层线路板压合形成LCP基板。The inner layer circuit board after the microetching treatment and the outer layer circuit board are pressed together to form an LCP substrate.
  2. 根据权利要求1所述LCP基板的制作方法,其特征在于,所述等离子体溅射所述内层线路板的步骤,包括:4. The manufacturing method of the LCP substrate according to claim 1, wherein the step of plasma sputtering the inner layer circuit board comprises:
    等离子体溅射铜层线路的表面以使铜层线路表面粗化。Plasma sputters the surface of the copper layer circuit to roughen the surface of the copper layer circuit.
  3. 根据权利要求1所述LCP基板的制作方法,其特征在于,所述微蚀处理的步骤,包括:4. The method of manufacturing an LCP substrate according to claim 1, wherein the step of micro-etching treatment comprises:
    对所述粗化后的铜层线路表面进行微蚀以使其形成微观粗化。Microetching is performed on the surface of the roughened copper layer circuit to form a microscopic roughening.
  4. 根据权利要求3所述的LCP基板的制作方法,其特征在于,所述微蚀是将内层线路板置于微蚀器中,采用微蚀液进行蚀刻处理,所述微蚀液包括硫酸、过硫酸钠和铜离子;所述硫酸的浓度为3%-5%,过硫酸钠的含量控制在50g/L-70g/L,铜离子的含量小于25g/L。The manufacturing method of the LCP substrate according to claim 3, wherein the micro-etching is to place the inner circuit board in a micro-etcher, and use a micro-etching solution for etching treatment, and the micro-etching solution includes sulfuric acid, Sodium persulfate and copper ions; the concentration of the sulfuric acid is 3%-5%, the content of sodium persulfate is controlled within 50g/L-70g/L, and the content of copper ions is less than 25g/L.
  5. 根据权利要求3所述LCP基板的制作方法,其特征在于,所述微蚀处理的步骤,还包括:4. The manufacturing method of the LCP substrate according to claim 3, wherein the step of micro-etching treatment further comprises:
    对所述微蚀后的内层线路板进行水洗;Washing the inner layer circuit board after the microetching;
    对水洗后的内层线路板进行酸洗以去除所述铜层线路表面的氧化物。The inner layer circuit board after washing with water is pickled to remove the oxide on the surface of the copper layer circuit.
  6. 根据权利要求5所述LCP基板制作方法,其特征在于,所述酸洗步骤中,采用浓度为3%至5%的硫酸溶液在25℃至35℃温度下进行酸洗。5. The LCP substrate manufacturing method according to claim 5, wherein in the pickling step, a sulfuric acid solution with a concentration of 3% to 5% is used for pickling at a temperature of 25°C to 35°C.
  7. 根据权利要求5所述LCP基板的制作方法,其特征在于,所述微蚀处理的步骤还包括:5. The manufacturing method of the LCP substrate according to claim 5, wherein the step of micro-etching treatment further comprises:
    对所述酸洗后的内层线路板进行水洗;Water washing the inner layer circuit board after the acid washing;
    对水洗之后的内层线路板进行抗氧化处理以清除所述内层线路板表面的酸洗液。Anti-oxidation treatment is performed on the inner layer circuit board after water washing to remove the pickling liquid on the surface of the inner layer circuit board.
  8. 根据权利要求7所述的LCP基板的制作方法,其特征在于,所述抗氧化处理为采用抗氧化剂对内层线路板在室温环境下进行抗氧化处理。8. The manufacturing method of the LCP substrate according to claim 7, wherein the anti-oxidation treatment is an anti-oxidation treatment of the inner layer circuit board at room temperature by using an anti-oxidant.
  9. 根据权利要求7所述LCP基板的制作方法,其特征在于,所述微蚀处理的步骤还包括:8. The manufacturing method of the LCP substrate according to claim 7, wherein the step of micro-etching treatment further comprises:
    对所述抗氧化处理后的内层线路板进行水洗;Water washing the inner circuit board after the anti-oxidation treatment;
    对水洗后的内层线路板进行烘干处理,所述烘干处理的温度为75℃至85℃。The inner layer circuit board after washing is dried, and the temperature of the drying treatment is 75°C to 85°C.
  10. 根据权利要求1所述的LCP基板的制作方法,其特征在于,在将微蚀处理后的内层线路板与外层线路板压合形成LCP基板的步骤中,所述内层线路板在等离子体溅射后24小时内与所述外层线路板进行压合。The manufacturing method of the LCP substrate according to claim 1, wherein in the step of pressing the microetched inner layer circuit board and the outer layer circuit board to form the LCP substrate, the inner layer circuit board is exposed to plasma After the body is sputtered, it is pressed and bonded with the outer layer circuit board within 24 hours.
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