WO2021243786A1 - 显示面板及其制作方法 - Google Patents

显示面板及其制作方法 Download PDF

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Publication number
WO2021243786A1
WO2021243786A1 PCT/CN2020/099862 CN2020099862W WO2021243786A1 WO 2021243786 A1 WO2021243786 A1 WO 2021243786A1 CN 2020099862 W CN2020099862 W CN 2020099862W WO 2021243786 A1 WO2021243786 A1 WO 2021243786A1
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WIPO (PCT)
Prior art keywords
layer
substrate
color
display panel
color resist
Prior art date
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Ceased
Application number
PCT/CN2020/099862
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English (en)
French (fr)
Inventor
耿敬
李冬泽
樊勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US17/040,990 priority Critical patent/US11817308B2/en
Publication of WO2021243786A1 publication Critical patent/WO2021243786A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Definitions

  • the present disclosure relates to the field of display technology, and more particularly to a display panel and a manufacturing method thereof.
  • Micro LED display devices Compared with OLED display devices, Micro LED display devices have high reliability, high color gamut, high brightness, high transparency, high PPI (Pixels Per Inch, pixel density); and low packaging requirements, it is easier to achieve flexible and seamless splicing display. It is a future display device with great development potential in the future.
  • the high height of the Micro LED chip makes the lateral light emission of the Micro LED display device very serious; if the traditional top-emitting Micro LED is used, it will cause crosstalk in the display panel, which will affect the contrast and color purity of the display. Will cause serious impact; further, in the process of pairing the upper and lower substrates, the vacuum pressure may crush the Micro The LED chip becomes invalid and affects the overall display effect.
  • the present application relates to a display panel and a manufacturing method thereof, which are used to solve the problem that the display panel is prone to crosstalk during display due to the excessively high chip height of the display panel in the prior art, which affects the display quality of the display panel.
  • the present application provides a display panel, the display panel includes: a first substrate;
  • the second substrate is being set to the first substrate
  • the driving circuit is arranged on a side close to the second substrate relative to the first substrate;
  • the color resist layer is arranged on the side of the driving circuit close to the first substrate;
  • the color resistance layer includes a color color resistance layer and a color quantum dot layer
  • the driving circuit is a bottom emission type light emitting diode driving circuit, and quantum dots or scattering particles are arranged in the color quantum dot layer.
  • the driving circuit includes a blue micro light emitting diode layer and a glue layer arranged around the blue micro light emitting diode layer.
  • the glue layer is a white glue layer.
  • the thickness of the white glue layer is greater than the thickness of the blue micro light emitting diode layer, and the blue micro light emitting diode layer has a certain preset thickness.
  • the preset thickness range of the blue micro light emitting diode layer is 90-190um.
  • the color color resist layer is divided into: a red color resist layer, a green color resist layer, and a transparent color resist layer
  • the color quantum dot layer includes: a red quantum dot area, a green quantum dot area And a transparent area; the color resist layers of various colors are arranged at intervals to the blue micro light emitting diode layer.
  • the red color resist layer is positioned opposite to the red quantum dot region
  • the green color resist layer is positioned opposite to the green quantum dot region
  • the transparent color resist layer is positioned directly opposite to the red quantum dot region.
  • a polyimide film and a thin film transistor layer are further provided between the driving circuit and the second substrate, and the thin film transistor layer is electrically connected to the driving circuit.
  • the thickness of the imide film is smaller than the blue micro light emitting diode layer, and the polyimide film has a certain preset thickness.
  • the thickness of the polyimide film is less than the thickness of the blue micro light emitting diode layer, and the preset thickness range of the polyimide film is 10-19 um.
  • the first substrate and the second substrate are glass substrates.
  • the present application also provides a display panel, the display panel includes: a first substrate;
  • the second substrate is being set to the first substrate
  • the driving circuit is arranged on a side close to the second substrate relative to the first substrate;
  • the color resist layer is arranged on the side of the driving circuit close to the first substrate;
  • the color resistance layer includes a color color resistance layer and a color quantum dot layer
  • the driving circuit is a bottom emission type light emitting diode driving circuit.
  • the driving circuit includes a blue micro light emitting diode layer and a glue layer arranged around the blue micro light emitting diode layer.
  • the glue layer is a white glue layer.
  • the thickness of the white glue layer is greater than the thickness of the blue micro light emitting diode layer, and the blue micro light emitting diode layer has a certain preset thickness.
  • the preset thickness range of the blue micro light emitting diode layer is 90-190um.
  • the color color resist layer is divided into: a red color resist layer, a green color resist layer, and a transparent color resist layer
  • the color quantum dot layer includes: a red quantum dot area, a green quantum dot area And a transparent area; the color resist layers of various colors are arranged at intervals to the blue micro light emitting diode layer.
  • the red color resist layer is positioned opposite to the red quantum dot region
  • the green color resist layer is positioned opposite to the green quantum dot region
  • the transparent color resist layer is positioned directly opposite to the red quantum dot region.
  • a polyimide film and a thin film transistor layer are further provided between the driving circuit and the second substrate, and the thin film transistor layer is electrically connected to the driving circuit.
  • the thickness of the imide film is smaller than the blue micro light emitting diode layer, and the polyimide film has a certain preset thickness.
  • the preset thickness range of the polyimide film is: 10-19um.
  • the present application also provides a method for manufacturing a display panel.
  • the method includes: manufacturing a backlight substrate and a color filter substrate; firstly, the manufacturing steps of the backlight substrate are:
  • the manufacturing steps of the color filter substrate are:
  • the color resist layer comprising: a red color resist layer, a green color resist layer and a transparent color resist layer;
  • the display panel and the manufacturing method thereof provided by the present application have the following beneficial effects:
  • the blue micro light emitting diode layer has a certain preset thickness, and the preset thickness range of the blue micro light emitting diode layer is 90-190um, which avoids excessive chip height. High, the possibility of crushing the blue micro light-emitting diode layer by pressure during the process of pairing the upper and lower substrates;
  • a white glue layer is arranged around the blue micro light emitting diode layer, and the white glue layer surrounds the blue micro light emitting diode layer, which can protect the blue color
  • the micro light emitting diode layer prevents the blue micro light emitting diode layer from being damaged during the manufacturing process; the white glue layer can also reflect the light emitted by the blue micro light emitting diode layer, so that all the light is gathered In the emission direction at the bottom of the display panel, the utilization rate, brightness and contrast of light are improved;
  • the thickness of the white glue layer is higher than the thickness of the blue micro-light-emitting diode layer, and the upper and lower end surfaces of the blue micro-light-emitting diode can also be protected during the assembly of the upper and lower substrates , To prevent the blue miniature light-emitting diode from being crushed or broken under the effect of pressure, which affects the display quality;
  • the color resistance layer includes a color color resistance layer and a color quantum dot layer.
  • the color color resistance layer is divided into: a red color resistance layer, a green color resistance layer, and a transparent color resistance layer.
  • the color quantum dot layer Including: a red quantum dot area, a green quantum dot area and a transparent area; the color resistance layers of various colors are facing the blue micro light emitting diode layer and are arranged separated by the black matrix, avoiding the display Crosstalk occurs on the panel, which affects the display quality of the display panel, and further improves the brightness and contrast of the red sub-pixels, green sub-pixels, and blue sub-pixels.
  • FIG. 1 is a schematic diagram of the structure of a display panel provided by an embodiment of the application.
  • 1A-1M are manufacturing process diagrams of the display panel provided by the embodiments of the application.
  • FIG. 2 is a schematic flowchart of a method for manufacturing a display panel provided by an embodiment of the application.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include one or more of the features. In the description of the present application, "a plurality of" means two or more than two, unless otherwise specifically defined.
  • connection should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected or integrally connected; it can be mechanically connected, it can be electrical connection or it can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal communication of two components or the interaction of two components relation.
  • connection should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected or integrally connected; it can be mechanically connected, it can be electrical connection or it can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal communication of two components or the interaction of two components relation.
  • the "above” or “below” of the first feature of the second feature may include direct contact between the first and second features, or may include the first and second features Not in direct contact but through other features between them.
  • “above”, “above” and “above” the second feature of the first feature include the first feature being directly above and obliquely above the second feature, or merely indicating that the level of the first feature is higher than that of the second feature.
  • the “below”, “below” and “below” of the second feature of the first feature include the first feature directly below and obliquely below the second feature, or it simply means that the level of the first feature is smaller than the second feature.
  • the present application provides a display panel and a manufacturing method thereof. For details, please refer to FIG. 1 to FIG. 2.
  • the height of the Micro LED chip in the existing micro LED display panel is relatively high, which makes the lateral light emission of the Micro LED display device very serious; if the traditional top-emitting micro LEDs will cause crosstalk in the display panel, which will have a serious impact on the contrast and color purity of the display, and then affect the display quality of the display panel. Therefore, this application proposes a micro LED display panel and manufacturing method thereof.
  • the display panel includes:
  • the second substrate 1 is being set to the first substrate 8;
  • the driving circuit is arranged on the side close to the second substrate 1 relative to the first substrate 8;
  • the color resist layer is located right on the side of the driving circuit and close to the first substrate 8;
  • the color resistance layer includes a color color resistance layer 7 and a color quantum dot layer 5, and the driving circuit is a bottom emission type light emitting diode driving circuit. Further, quantum dots or scattering particles are arranged in the color quantum dot layer 5.
  • the display panel is a Micro LED display panel, which is an LED miniaturization and matrix technology.
  • the LED backlight is thinned, miniaturized, and arrayed to allow The LED unit is smaller than 100 microns.
  • each picture element can be individually addressed and driven to emit light separately (self-luminous); in another embodiment of the present application, the display panel is a Mini LED (sub-millimeter light-emitting diode)
  • Mini LED is an improved version of the traditional LED backlight, which is between the traditional LED and the Micro LED.
  • the driving circuit includes a blue micro light emitting diode layer and a glue layer 42 arranged around the blue micro light emitting diode 41, and the glue layer 42 is a white glue layer.
  • the thickness of the white glue layer is greater than the thickness of the blue micro light emitting diode 41, so that the white glue layer completely encloses the blue micro light emitting diode 41.
  • the white glue layer can Protect the blue micro-light-emitting diode 41 to prevent the surface of the blue micro-light-emitting diode 41 from being damaged during the manufacturing process, which affects the display quality of the display panel; on the other hand, the white glue layer protects the blue The light emitted by the color miniature light-emitting diode 41 is gathered, so that all the light is gathered in the emission direction of the bottom of the display panel, which improves the utilization, brightness and contrast of light.
  • another layer of black glue 43 can be further provided around the white glue layer, except for the side close to the color quantum dots 5 (the side used for the blue micro light emitting diode to emit light).
  • the light emitted by the blue miniature light-emitting diode 41 is gathered to prevent leakage of light and improve the brightness and contrast of the light of the display panel.
  • the blue micro light emitting diode 41 has a certain preset thickness, and the preset thickness range of the blue micro light emitting diode layer is 90-190 um.
  • the color color resist layer 7 is divided into: a red color resist layer (R) 71, a green color resist layer (G) 72 and a transparent color resist layer (T) 73, each of which is A black matrix 74 is arranged between the color color resist layers to separate the different color resist layers to avoid crosstalk of the colors of the different color resist layers 7;
  • the color quantum dot layer 5 includes: red quantum dots Area 51, green quantum dot area 52, and transparent area 53; red quantum dots are injected into the red quantum dot area 51, green quantum dots are injected into the green quantum dot area 52, and transparent quantum dots are injected into the transparent area 53;
  • the color quantum dot area 5 is blocked by the black pixel defining layer 54 so that the color quantum dot layer 5 can be divided into quantum dot areas of multiple colors to be injected with quantum dots of different colors, which can effectively use light energy, And prevent the Micro The color interference between pixels in the LED quantum dot layer.
  • the black pixel defining layer 54 and the black matrix 74 can be made of the same material or different materials.
  • the black pixel defining layer 54 is designed to make various colors
  • the color ink can be printed in the corresponding area and form the corresponding sub-pixel shape.
  • the black pixel defining layer 54 needs to be provided on the printing substrate, and the ink is printed into the hole defined by the black pixel defining layer 54.
  • the commonality of the black pixel defining layer 54 and the black matrix 74 is to shield light and isolate the color resistance of different colors; the color color resistance layer 5 of various colors is opposite to the blue micro light emitting diode 41, and is arranged at intervals That is, the blue micro light emitting diode 41 includes a plurality of blue micro light emitting diodes arranged at intervals, each of the blue micro light emitting diodes is facing one of the color color resist layers 7, and the color color resist layers may be The red color resist layer 71, the green color resist layer 72 or the transparent color resist layer 73, which concentrates the colors of the regions corresponding to each of the color resist layers 7, which is beneficial to improve the area of each color resist layer 7 Brightness and contrast.
  • the color quantum dot layer 5 can also be called a color conversion layer, which can convert the color of the light emitted by the blue micro light-emitting diode 41, that is, when the light emitted by the blue micro light-emitting diode 41 When passing through the red quantum dot area 51, it becomes red light.
  • the blue micro light emitting diode 41 passes through the green quantum dot area 52, it becomes green light.
  • the light emitted by the micro light emitting diode 41 passes through the transparent area 53, it directly emits blue light, and then can form an RGB sub-pixel unit.
  • the red color resist layer 71 is positioned directly to the red quantum dot area 51
  • the green color resist layer 72 is positioned directly to the green quantum dot region 52
  • the transparent color resist layer 73 is positioned directly toward the The transparent area 53 is set.
  • a polyimide film 2 and a thin film transistor layer 3 are further provided between the driving circuit and the second substrate 1, and the thin film transistor layer 3 is electrically connected to the driving circuit.
  • the thickness of the polyimide film 2 is smaller than that of the blue micro light emitting diode 41, and the polyimide film 2 has a certain preset thickness. Further, the preset thickness range of the polyimide film 2 is: 10-19um.
  • first substrate 8, the second substrate 1 and the third substrate 9 may all be glass substrates or resin substrates.
  • the driving circuit can be not only a TFT driving circuit matched with a thin film transistor, but also a CMOS driving circuit.
  • the driving circuit is a CMOS driving circuit
  • the second substrate adopts a matching CMOS substrate.
  • the present application also provides a method for manufacturing a display panel, which includes: manufacturing a backlight substrate and a color film substrate; first, the manufacturing steps of the backlight substrate are:
  • a third substrate 9 is provided, and a polyimide film 2 is deposited on one side of the third substrate 9;
  • the third substrate 9 may be a glass substrate or a resin substrate, etc., to support the thin film transistor Layer 3 and the drive circuit can also serve as a medium between the bottom emission drive circuit and the color quantum dot ink; therefore, the polyimide film 2 has a certain preset thickness, and the polyimide film 2 has a certain preset thickness.
  • the preset thickness range of the imide film 2 is 10-19um. Therefore, the thickness of the bottom emission type micro light-emitting diode driving circuit is reduced, and the micro LED/Mini LED display panel chip height is prevented from being too high. The problem of crosstalk during display of the display panel;
  • the thin film transistor layer 3 is electrically connected to the blue micro light emitting diode 41 for driving the blue light emitting diode Color miniature light-emitting diode 41;
  • blue micro light emitting diode 41 emits blue light for exciting the red quantum dots and the The green quantum dots respectively form red sub-pixels and green sub-pixels.
  • blue sub-pixels are provided when passing through the transparent area, so that multiple RGB sub-pixel units can be formed; in addition, the blue micro light-emitting diode
  • a white glue layer 42 is also provided around 41. The white glue layer 42 encapsulates the blue micro light emitting diode 41.
  • the white glue layer 42 can also gather the light emitted by the blue miniature light-emitting diode 41 to concentrate all the light on the blue light-emitting diode.
  • the bottom reflection direction of the colored miniature light-emitting diode 41 improves the light utilization, brightness, and contrast in each of the colored quantum dot regions;
  • the manufacturing steps of the color filter substrate are:
  • the color color resist layer includes: a red color resist layer 71, a green color resist layer 72 and a transparent color resist layer 73; yellow light using red photoresist and green photoresist respectively
  • the red color resist layer 71 and the green color resist layer 72 are prepared by the manufacturing process, which can effectively reduce the blue light transmission in the backlight substrate and improve the color purity and contrast of the display;
  • an insulating layer 6 is deposited on one side of the color resist layer by using a chemical vapor deposition method; the insulating layer 6 is silicon dioxide, and the silicon dioxide layer can prevent the black pixel defining layer 54 from contacting the lower layer of light. It can also prevent corrosion between the upper and lower photoresist layers. At the same time, it can also affect the overlap between the red color resist layer 71 and the green color resist layer 72 and the black matrix 74 (BM overlay) The formed horns terrain can play a certain leveling effect;
  • the display panel and the manufacturing method thereof provided by the present application have the following beneficial effects:
  • the blue micro light emitting diode layer has a certain preset thickness, and the blue The preset thickness of the color micro-light-emitting diode layer is 90-190um, which avoids the possibility that the micro LED/Mini LED chip is too high and the blue micro-light-emitting diode layer is crushed by pressure during the process of pairing the upper and lower substrates;
  • a white glue layer is arranged around the blue micro light emitting diode layer, and the white glue layer surrounds the blue micro light emitting diode layer, which can protect the blue micro light emitting diode layer , Avoiding the blue micro light emitting diode layer from being damaged during the manufacturing process; the white glue layer can also reflect the light emitted by the blue micro light emitting diode layer, so that all the light is gathered in the micro The emission direction of the bottom of
  • the color resist layer is divided into a red color resist layer, a green color resist layer and a transparent color resist layer.
  • the color quantum dot layer includes a red quantum dot area and a green quantum dot. Area and transparent area; the color resistance layer of various colors is facing the blue micro light emitting diode layer and is arranged separated by the black matrix, which avoids crosstalk of the display panel and affects the display quality of the display panel , It also further improves the brightness and contrast of the red sub-pixels, green sub-pixels and blue sub-pixels.

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Abstract

一种显示面板及其制作方法，显示面板包括：第一基板（8）；第二基板（1），正对于第一基板（8）进行设置；驱动电路，相对第一基板（8），靠近第二基板（1）一侧进行设置；色阻层，正对于驱动电路，靠近第一基板（8）一侧进行设置；色阻层包括彩色色阻层（7）和彩色量子点层（5），且驱动电路为底发射型微型发光二极管驱动电路。

Description

显示面板及其制作方法 技术领域
本揭示涉及显示技术领域，尤其涉及一种显示面板及其制作方法。
 背景技术
Micro LED显示装置相比OLED显示装置具有可靠性高，色域高，亮度高，透明度高，PPI（Pixels Per Inch，像素密度）高；且封装要求低，更容易实现柔性及无缝拼接显示，是未来极具有发展潜力的未来显示装置。
另一方面，Micro LED芯片的高度较高，使得Micro LED显示装置的侧向出光十分严重；若采用传统的顶发射型Micro LED，将导致显示面板发生串扰，对显示器的对比度、色纯度等都将造成严重影响；进一步地，在上下基板对组的过程中，真空压力可能压碎Micro LED芯片，使其失效，影响整体显示效果。
因此，现有的micro LED显示装置的技术中，还存在着micro LED显示面板的由于Micro LED芯片的高度过高，使得显示面板在显示时容易发生串扰，影响显示面板的显示质量的问题，急需改进。
 技术问题
本申请涉及一种显示面板及其制作方法，用于解决现有技术中存在着显示面板的由于芯片的高度过高，使得显示面板在显示时容易发生串扰，影响显示面板的显示质量的问题。
 技术解决方案
为解决上述问题，本申请提供的技术方案如下：
本申请提供的一种显示面板，所述显示面板包括：第一基板；
第二基板，正对于所述第一基板进行设置；
驱动电路，相对所述第一基板，靠近所述第二基板一侧进行设置；
色阻层，正对于所述驱动电路，靠近所述第一基板一侧进行设置；
所述色阻层包括彩色色阻层和彩色量子点层，且所述驱动电路为底发射型发光二极管驱动电路，所述彩色量子点层内设置量子点或是散射颗粒。
根据本申请提供的一实施例，所述驱动电路包括蓝色微型发光二极管层以及设置在所述蓝色微型发光二极管层四周的胶层。
根据本申请提供的一实施例，所述胶层为白胶层。
根据本申请提供的一实施例，所述白胶层的厚度大于所述蓝色微型发光二极管层的厚度，所述蓝色微型发光二极管层具有一定的预设厚度。
根据本申请提供的一实施例，所述蓝色微型发光二极管层的预设厚度范围为：90-190um。
根据本申请提供的一实施例，所述彩色色阻层分为：红色色阻层、绿色色阻层和透明色阻层，所述彩色量子点层包括：红色量子点区域、绿色量子点区域和透明区域；各种颜色的所述彩色色阻层正对于所述蓝色微型发光二极管层，间隔设置。
根据本申请提供的一实施例，所述红色色阻层正对于所述红色量子点区域设置，所述绿色色阻层正对于所述绿色量子点区域设置，所述透明色阻层正对于所述透明区域设置。
根据本申请提供的一实施例，所述驱动电路与所述第二基板之间还设置有聚酰亚胺薄膜和薄膜晶体管层，所述薄膜晶体管层电性连接所述驱动电路，所述聚酰亚胺薄膜的厚度小于所述蓝色微型发光二极管层，且所述聚酰亚胺薄膜具有一定的预设厚度。
根据本申请提供的一实施例，所述聚酰亚胺薄膜的厚度小于所述蓝色微型发光二极管层的厚度，所述聚酰亚胺薄膜的预设厚度范围为：10-19um。
根据本申请提供的一实施例，所述第一基板和所述第二基板为玻璃基板。
本申请还提供的一种显示面板，所述显示面板包括：第一基板；
第二基板，正对于所述第一基板进行设置；
驱动电路，相对所述第一基板，靠近所述第二基板一侧进行设置；
色阻层，正对于所述驱动电路，靠近所述第一基板一侧进行设置；
所述色阻层包括彩色色阻层和彩色量子点层，且所述驱动电路为底发射型发光二极管驱动电路。
根据本申请提供的一实施例，所述驱动电路包括蓝色微型发光二极管层以及设置在所述蓝色微型发光二极管层四周的胶层。
根据本申请提供的一实施例，所述胶层为白胶层。
根据本申请提供的一实施例，所述白胶层的厚度大于所述蓝色微型发光二极管层的厚度，所述蓝色微型发光二极管层具有一定的预设厚度。
根据本申请提供的一实施例，所述蓝色微型发光二极管层的预设厚度范围为：90-190um。
根据本申请提供的一实施例，所述彩色色阻层分为：红色色阻层、绿色色阻层和透明色阻层，所述彩色量子点层包括：红色量子点区域、绿色量子点区域和透明区域；各种颜色的所述彩色色阻层正对于所述蓝色微型发光二极管层，间隔设置。
根据本申请提供的一实施例，所述红色色阻层正对于所述红色量子点区域设置，所述绿色色阻层正对于所述绿色量子点区域设置，所述透明色阻层正对于所述透明区域设置。
根据本申请提供的一实施例，所述驱动电路与所述第二基板之间还设置有聚酰亚胺薄膜和薄膜晶体管层，所述薄膜晶体管层电性连接所述驱动电路，所述聚酰亚胺薄膜的厚度小于所述蓝色微型发光二极管层，且所述聚酰亚胺薄膜具有一定的预设厚度。
根据本申请提供的一实施例，所述聚酰亚胺薄膜的预设厚度范围为：10-19um。
本申请还提供一种显示面板的制作方法，该方法包括：背光基板的制作和彩膜基板的制作；首先，所述背光基板的制作步骤为：
S10，提供第三基板，在所述第三基板一侧沉积聚酰亚胺薄膜；
S20，在所述聚酰亚胺薄膜背离所述第三基板一侧形成薄膜晶体管层；
S30，在所述薄膜晶体管层背离所述聚酰亚胺薄膜一侧形成蓝色微型发光二极管层；
S40，在所述蓝色微型发光二极管背离所述薄膜晶体管层的一侧形成第二基板；
S50，采用激光剥离的方法剥离所述第三基板；
然后，所述彩膜基板的制作步骤为：
S60，在第一基板的一侧制作黑色矩阵，分隔开各个色阻层；
S70，采用黄光制程制作彩色色阻层，所述彩色色阻层包括：红色色阻层、绿色色阻层和透明色阻层；
S80，采用化学气相沉积法在所述彩色色阻层的一侧沉积绝缘层；
S90，采用黄光制程在所述绝缘层背离所述彩色色阻层的一侧形成黑色像素限定层，所述黑色像素限定层正对于所述黑色矩阵进行设置；
S100，在所述黑色像素限定层间隔开的各个区域内间隔注入红色量子点和绿色量子点；
最后，将所述背光基板与所述彩膜基板进行组装：
S110，将所述聚酰亚胺薄膜一侧与所述彩色量子点层一侧进行对组安装。
 有益效果
与现有技术相比，本申请提供的一种显示面板及其制作方法具有的有益效果为：
1.首先，本申请所提供的显示面板，所述蓝色微型发光二极管层具有一定的预设厚度，所述蓝色微型发光二极管层的预设厚度范围为90-190um，避免了芯片高度过高，在上下基板对组的过程中压力压碎所述蓝色微型发光二极管层的可能；
2.其次，本申请所提供的显示面板，所述蓝色微型发光二极管层的四周设置有白胶层，所述白胶层包围所述蓝色微型发光二极管层，既可以保护所述蓝色微型发光二极管层，避免了所述蓝色微型发光二极管层在制作过程中受到伤害；所述白胶层还可以对所述蓝色微型发光二极管层所发出的光进行反射，使得所有的光线聚拢在所述显示面板底发射方向，提高了光线的利用率、亮度和对比度；
3.进一步地，所述白胶层的厚度高于所述蓝色微型发光二极管层的厚度，在上下基板进行对组的过程中，还可以对所述蓝色微型发光二极管的上下端面进行保护，避免了所述蓝色微型发光二极管受到压力的作用，被压碎或是破裂，影响显示质量；
4.最后，所述色阻层包括彩色色阻层和彩色量子点层，所述彩色色阻层分为：红色色阻层、绿色色阻层和透明色阻层，所述彩色量子点层包括：红色量子点区域、绿色量子点区域和透明区域；各种颜色的所述色阻层正对于所述蓝色微型发光二极管层，由所述黑色矩阵间隔开进行设置，避免了所述显示面板发生串扰，影响显示面板的显示质量，也进一步提高了红色子像素、绿色子像素以及蓝色子像素的亮度和对比度。
 附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的显示面板的结构示意图。
图1A-1M为本申请实施例提供的显示面板的制作工艺图。
图2为本申请实施例提供的显示面板制作方法的流程示意图。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
本申请提供一种显示面板及其制作方法，具体参阅图1-图2。
现有的micro LED显示面板中Micro LED芯片的高度较高，使得Micro LED显示装置的侧向出光十分严重；若采用传统的顶发射型micro LED，将导致显示面板发生串扰，对显示器的对比度、色纯度等都将造成严重影响，进而影响显示面板的显示质量的问题。因此，本申请特提出一种micro LED显示面板及其制作方法。
参阅图1，本申请提供的一种显示面板的结构示意图，所述显示面板包括：
第一基板8；
第二基板1，正对于所述第一基板8进行设置；
驱动电路，相对所述第一基板8，靠近所述第二基板1一侧进行设置；
色阻层，正对于所述驱动电路，靠近所述第一基板8一侧进行设置；
所述色阻层包括彩色色阻层7和彩色量子点层5，且所述驱动电路为底发射型发光二极管驱动电路。进一步地，所述彩色量子点层5内设置量子点或是散射颗粒。
在本申请的一种实施例中，所述显示面板为Micro LED显示面板，是LED微缩化和矩阵化技术，简单来说，就是将LED背光源进行薄膜化、微小化、阵列化，可以让LED单元小于100微米，与OLED一样能够实现每个图元单独定址，单独驱动发光(自发光)；在本申请的另一种实施例中，所述显示面板为Mini LED（次毫米发光二极管）显示面板，晶粒尺寸在50微米以上，250微米以下的LED，Mini LED是介于传统LED与Micro LED之间，为传统LED背光基础上的改良版本。
在本申请的一种实施例中，所述驱动电路包括蓝色微型发光二极管层、以及设置在所述蓝色微型发光二极管41四周的胶层42，所述胶层42为白胶层。
进一步地，所述白胶层的厚度大于所述蓝色微型发光二极管41的厚度，以使得所述白胶层将所述蓝色微型发光二极管41完全包住，一方面所述白胶层可以保护所述蓝色微型发光二极管41，避免所述蓝色微型发光二极管41的表面在制作过程中受到破坏，影响所述显示面板的显示质量；另一方面，所述白胶层将所述蓝色微型发光二极管41所发出的光进行聚拢，使得所有的光线聚拢在所述显示面板底发射方向，提高了光线的利用率、亮度和对比度。
进一步地，所述白胶层的四周，除了靠近所述彩色量子点5的一侧（用于所述蓝色微型发光二极管出光的一侧）均可以再另行设置一层黑胶43，进一步将所述蓝色微型发光二极管41所发出的光线进行聚拢，防止光线的泄露，提高所述显示面板的光线亮度和对比度。
进一步地，所述蓝色微型发光二极管41具有一定的预设厚度，所述蓝色微型发光二极管层的预设厚度范围为：90-190um。
在本申请的一种实施例中，所述彩色色阻层7分为：红色色阻层（R）71、绿色色阻层（G）72和透明色阻层（T）73，各个所述彩色色阻层之间设置有黑色矩阵74将不同的所述彩色色阻层间隔开，避免不同的所述彩色色阻层7颜色的串扰；所述彩色量子点层5包括：红色量子点区域51、绿色量子点区域52和透明区域53；所述红色量子点区域51内注入红色量子点，所述绿色量子点区域52内注入绿色量子点，所述透明区域53内注入透明量子点；所述彩色量子点区域5由黑色像素限定层54所阻隔开，以使得所述彩色量子点层5能够分成多种颜色的量子点区域分别注入不同颜色的量子点，可以有效地利用光能，以及防止所述Micro LED量子点层中的像素间颜色的相互干扰，所述黑色像素限定层54与所述黑色矩阵74可以采用相同的材料或是不同的材料，所述黑色像素限定层54为了使各种不同颜色的彩色墨水能够打印到对应的区域内并形成相应的子像素的形状，在打印基板上需要设置所述黑色像素限定层54，将墨水打印到所述黑色像素限定层54限定的孔洞中，所述黑色像素限定层54与所述黑色矩阵74的共性都是为了遮光并隔绝不同颜色的色阻；各种颜色的所述彩色色阻层5正对于所述蓝色微型发光二极管41，间隔设置，即所述蓝色微型发光二极管41包括多个间隔设置的蓝色微型发光二极管，每个所述蓝色微型发光二极管正对于一个所述彩色色阻层7，所述彩色色阻层可以是红色色阻层71、绿色色阻层72或是透明色阻层73，这样集中了每个所述彩色色阻层7所对应区域的颜色，有利于提高各个所述彩色色阻层7区域的亮度和对比度。
进一步地，所述彩色量子点层5也可以叫作色转换层，可以对所述蓝色微型发光二极管41发出的光的颜色进行转换，即当所述蓝色微型发光二极管41所发出的光经过所述红色量子点区域51时，变成红色的光，当所述蓝色微型发光二极管41所发出的光经过所述绿色量子点区域52时，变成绿色的光，当所述蓝色微型发光二极管41发出的光经过所述透明区域53时，直接发出蓝色的光，进而可以组成RGB子像素单元。
进一步地，所述红色色阻层71正对于所述红色量子点区域51设置，所述绿色色阻层72正对于所述绿色量子点区域52设置，所述透明色阻层73正对于所述透明区域53设置。
在本申请的一种实施例中，所述驱动电路与所述第二基板1之间还设置有聚酰亚胺薄膜2和薄膜晶体管层3，所述薄膜晶体管层3电性连接所述驱动电路，所述聚酰亚胺薄膜2的厚度小于所述蓝色微型发光二极管41，且所述聚酰亚胺薄膜2具有一定的预设厚度。进一步地，所述聚酰亚胺薄膜2的预设厚度范围为：10-19um。
进一步地，所述第一基板8、所述第二基板1和所述第三基板9均可以是玻璃基板或是树脂基板。
进一步地，所述驱动电路不仅可以是与薄膜晶体管配套的TFT驱动电路，还可以是CMOS驱动电路，当所述驱动电路为CMOS驱动电路时，所述第二基板采用与之配套的CMOS基板。
参阅图1A-1M以及图2，本申请还提供一种显示面板的制作方法，该方法包括：背光基板的制作和彩膜基板的制作；首先，所述背光基板的制作步骤为：
S10，提供第三基板9，在所述第三基板9一侧沉积聚酰亚胺薄膜2；所述第三基板9可以是玻璃基板也可以是树脂基板等，以用于支撑所述薄膜晶体管层3和所述驱动电路，还可以作为所述底发射型驱动电路与所述彩色量子点墨水之间的介质；因此，所述聚酰亚胺薄膜2具有一定的预设厚度，所述聚酰亚胺薄膜2的预设厚度范围为：10-19um，因此，降低了所述底发射型微型发光二极管驱动电路的厚度，避免了所述micro LED/Mini LED显示面板芯片高度过高，造成显示面板在显示时发生串扰的问题；
S20，在所述聚酰亚胺薄膜2背离所述第三基板9一侧形成薄膜晶体管层3；所述薄膜晶体管层3电性连接所述蓝色微型发光二极管41，用于驱动所述蓝色微型发光二极管41；
S30，在所述薄膜晶体管层3背离所述聚酰亚胺薄膜2一侧形成蓝色微型发光二极管层；所述蓝色微型发光二极管41发出蓝光，用于激发所述红色量子点和所述绿色量子点，分别形成红色子像素和绿色子像素，同时，在穿过所述透明区域时提供蓝色子像素，这样就可以形成多个RGB子像素单元；此外，所述蓝色微型发光二极管41的四周还设置有白胶层42，所述白胶层42对所述蓝色微型发光二极管41进行封装，一方面对所述蓝色微型发光二极管41的表面起到保护作用，避免所述蓝色微型发光二极管41在制作过程中受到伤害，另一方面，所述白胶层42还可以将所述蓝色微型发光二极管41所发出的光进行聚拢，将所有的光线集中在所述蓝色微型发光二极管41的底反射方向，提高各个所述彩色量子点区域内的光线利用率、亮度和对比度；
S40，在所述蓝色微型发光二极管41背离所述薄膜晶体管层3的一侧形成第二基板1；将所述白胶层42背离所述薄膜晶体管层3的一侧进行磨平处理，再在其上形成所述第二基板1，当所述第三基板9被剥离后，作为所述驱动电路的支撑，以便进行后续的对组；
S50，采用激光剥离的方法剥离所述第三基板9；
然后，所述彩膜基板的制作步骤为：
S60，在第一基板8的一侧制作黑色矩阵74，分隔开各个色阻层；防止各个所述子像素的颜色发生串扰；
S70，采用黄光制程制作彩色色阻层，所述彩色色阻层包括：红色色阻层71、绿色色阻层72和透明色阻层73；分别使用红色光阻和绿色光阻的黄光制程制备所述红色色阻层71和所述绿色色阻层72，可有效减少背光基板中蓝光透过，提高显示器的色纯度和对比度；
S80，采用化学气相沉积法在所述彩色色阻层的一侧沉积绝缘层6；所述绝缘层6为二氧化硅，所述二氧化硅层可防止所述黑色像素限定层54对下层光阻造成影响，也可以防止上下光阻层之间发生侵蚀，同时，还可以对所述红色色阻层71和所述绿色色阻层72与所述黑色矩阵74的搭接处（BM overlay）所形成的牛角地形能起到一定的平坦作用；
S90，采用黄光制程在所述绝缘层背离所述彩色色阻层的一侧形成黑色像素限定层54，所述黑色像素限定层54正对于所述黑色矩阵74进行设置；
S100，在所述黑色像素限定层54间隔开的各个区域内间隔注入红色量子点和绿色量子点；即在所述黑色像素限定层54所限定的各个区域内分别形成的所述红色量子点区域71、所述绿色量子点区域72和所述透明量子点区域73；
最后，将所述背光基板与所述彩膜基板进行组装：
S110，将所述聚酰亚胺薄膜2一侧与所述彩色量子点层7一侧进行对组安装。
因此，本申请提供的一种显示面板及其制作方法具有的有益效果为：首先，本申请所提供的micro LED显示面板，所述蓝色微型发光二极管层具有一定的预设厚度，所述蓝色微型发光二极管层的预设厚度为90-190um，避免了micro LED/Mini LED芯片高度过高，在上下基板对组的过程中压力压碎所述蓝色微型发光二极管层的可能；其次，本申请所提供的显示面板，所述蓝色微型发光二极管层的四周设置有白胶层，所述白胶层包围所述蓝色微型发光二极管层，既可以保护所述蓝色微型发光二极管层，避免了所述蓝色微型发光二极管层在制作过程中受到伤害；所述白胶层还可以对所述蓝色微型发光二极管层所发出的光进行反射，使得所有的光线聚拢在所述micro LED显示面板底发射方向，提高了光线的利用率、亮度和对比度；进一步地，所述白胶层的厚度高于所述蓝色微型发光二极管层的厚度，在上下基板进行对组的过程中，还可以对所述蓝色微型发光二极管的上下端面进行保护，避免了所述蓝色微型发光二极管受到压力的作用，被压碎或是破裂，影响显示质量；最后，所述色阻层包括彩色色阻层和彩色量子点层，所述彩色色阻层分为：红色色阻层、绿色色阻层和透明色阻层，所述彩色量子点层包括：红色量子点区域、绿色量子点区域和透明区域；各种颜色的所述色阻层正对于所述蓝色微型发光二极管层，由所述黑色矩阵间隔开进行设置，避免了所述显示面板发生串扰，影响显示面板的显示质量，也进一步提高了红色子像素、绿色子像素以及蓝色子像素的亮度和对比度。
以上对本申请实施例所提供的一种显示面板及其制作方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。

Claims (20)

  1. 一种显示面板，所述显示面板包括：第一基板；
    第二基板，正对于所述第一基板进行设置；
    驱动电路，相对所述第一基板，靠近所述第二基板一侧进行设置；
    色阻层，正对于所述驱动电路，靠近所述第一基板一侧进行设置；
    所述色阻层包括彩色色阻层和彩色量子点层，且所述驱动电路为底发射型发光二极管驱动电路，所述彩色量子点层内设置量子点或是散射颗粒。
  2. 根据权利要求1所述的显示面板，其中，所述驱动电路包括蓝色微型发光二极管层以及设置在所述蓝色微型发光二极管层四周的胶层。
  3. 根据权利要求2所述的显示面板，其中，所述胶层为白胶层。
  4. 根据权利要求2所述的显示面板，其中，所述白胶层的厚度大于所述蓝色微型发光二极管层的厚度，所述蓝色微型发光二极管层具有一定的预设厚度。
  5. 根据权利要求4所述的显示面板，其中，所述蓝色微型发光二极管层的预设厚度范围为：90-190um。
  6. 根据权利要求1所述的显示面板，其中，所述彩色色阻层分为：红色色阻层、绿色色阻层和透明色阻层，所述彩色量子点层包括：红色量子点区域、绿色量子点区域和透明区域；各种颜色的所述彩色色阻层正对于所述蓝色微型发光二极管层，间隔设置。
  7. 根据权利要求6所述的显示面板，其中，所述红色色阻层正对于所述红色量子点区域设置，所述绿色色阻层正对于所述绿色量子点区域设置，所述透明色阻层正对于所述透明区域设置。
  8. 根据权利要求1所述的显示面板，其中，所述驱动电路与所述第二基板之间还设置有聚酰亚胺薄膜和薄膜晶体管层，所述薄膜晶体管层电性连接所述驱动电路，所述聚酰亚胺薄膜的厚度小于所述蓝色微型发光二极管层，且所述聚酰亚胺薄膜具有一定的预设厚度。
  9. 根据权利要求8所述的显示面板，其中，所述聚酰亚胺薄膜的预设厚度范围为：10-19um。
  10. 根据权利要求1所述的显示面板，其中，所述第一基板和所述第二基板为玻璃基板。
  11. 一种显示面板，所述显示面板包括：第一基板；
    第二基板，正对于所述第一基板进行设置；
    驱动电路，相对所述第一基板，靠近所述第二基板一侧进行设置；
    色阻层，正对于所述驱动电路，靠近所述第一基板一侧进行设置；
    所述色阻层包括彩色色阻层和彩色量子点层，且所述驱动电路为底发射型发光二极管驱动电路。
  12. 根据权利要求11所述的显示面板，其中，所述驱动电路包括蓝色微型发光二极管层以及设置在所述蓝色微型发光二极管层四周的胶层。
  13. 根据权利要求12所述的显示面板，其中，所述胶层为白胶层。
  14. 根据权利要求12所述的显示面板，其中，所述白胶层的厚度大于所述蓝色微型发光二极管层的厚度，所述蓝色微型发光二极管层具有一定的预设厚度。
  15. 根据权利要求14所述的显示面板，其中，所述蓝色微型发光二极管层的预设厚度范围为：90-190um。
  16. 根据权利要求11所述的显示面板，其中，所述彩色色阻层分为：红色色阻层、绿色色阻层和透明色阻层，所述彩色量子点层包括：红色量子点区域、绿色量子点区域和透明区域；各种颜色的所述彩色色阻层正对于所述蓝色微型发光二极管层，间隔设置。
  17. 根据权利要求16所述的显示面板，其中，所述红色色阻层正对于所述红色量子点区域设置，所述绿色色阻层正对于所述绿色量子点区域设置，所述透明色阻层正对于所述透明区域设置。
  18. 根据权利要求11所述的显示面板，其中，所述驱动电路与所述第二基板之间还设置有聚酰亚胺薄膜和薄膜晶体管层，所述薄膜晶体管层电性连接所述驱动电路，所述聚酰亚胺薄膜的厚度小于所述蓝色微型发光二极管层，且所述聚酰亚胺薄膜具有一定的预设厚度。
  19. 根据权利要求18所述的显示面板，其中，所述聚酰亚胺薄膜的厚度小于所述蓝色微型发光二极管层的厚度，所述聚酰亚胺薄膜的预设厚度范围为：10-19um。
  20. 一种显示面板的制作方法，其中，该方法包括：背光基板的制作和彩膜基板的制作；
    首先，所述背光基板的制作步骤为：
    S10，提供第三基板，在所述第三基板一侧沉积聚酰亚胺薄膜；
    S20，在所述聚酰亚胺薄膜背离所述第三基板一侧形成薄膜晶体管层；
    S30，在所述薄膜晶体管层背离所述聚酰亚胺薄膜一侧形成蓝色微型发光二极管层；
    S40，在所述蓝色微型发光二极管背离所述薄膜晶体管层的一侧形成第二基板；
    S50，采用激光剥离的方法剥离所述第三基板；
    然后，所述彩膜基板的制作步骤为：
    S60，在第一基板的一侧制作黑色矩阵，分隔开各个色阻层；
    S70，采用黄光制程制作彩色色阻层，所述彩色色阻层包括：红色色阻层、绿色色阻层和透明色阻层；
    S80，采用化学气相沉积法在所述彩色色阻层的一侧沉积绝缘层；
    S90，采用黄光制程在所述绝缘层背离所述彩色色阻层的一侧形成黑色像素限定层，所述黑色像素限定层正对于所述黑色矩阵进行设置；
    S100，在所述黑色像素限定层间隔开的各个区域内间隔注入红色量子点和绿色量子点；
    最后，将所述背光基板与所述彩膜基板进行组装：
    S110，将所述聚酰亚胺薄膜一侧与所述彩色量子点层一侧进行对组安装。
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