WO2021239542A1 - Composant semi-conducteur optoélectronique et procédé de fabrication de composants semi-conducteurs optoélectroniques - Google Patents

Composant semi-conducteur optoélectronique et procédé de fabrication de composants semi-conducteurs optoélectroniques Download PDF

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Publication number
WO2021239542A1
WO2021239542A1 PCT/EP2021/063301 EP2021063301W WO2021239542A1 WO 2021239542 A1 WO2021239542 A1 WO 2021239542A1 EP 2021063301 W EP2021063301 W EP 2021063301W WO 2021239542 A1 WO2021239542 A1 WO 2021239542A1
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WIPO (PCT)
Prior art keywords
carrier
lens
semiconductor component
optoelectronic semiconductor
base body
Prior art date
Application number
PCT/EP2021/063301
Other languages
German (de)
English (en)
Inventor
Ivar Tangring
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Osram Opto Semiconductors Gmbh
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Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2021239542A1 publication Critical patent/WO2021239542A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Definitions

  • An optoelectronic semiconductor component is specified.
  • a method for producing optoelectronic semiconductor components is specified.
  • One problem to be solved is to provide optoelectronic semiconductor components that can be manufactured cost-effectively.
  • the semiconductor component comprises a carrier.
  • the carrier is preferably that component of the semiconductor component which mechanically carries and supports it.
  • the carrier is also preferably electrically functionalized, that is to say in particular provided with electrical connection elements such as through-contacts and connection surfaces.
  • the carrier preferably has a single base material, such as a ceramic or a semiconductor material or a metal.
  • the base material is responsible for the mechanical stability of the carrier and / or makes up at least 80% or 90% of a volume and / or a mass of the carrier.
  • part of a mounting side of the semiconductor component is through the carrier educated.
  • the mounting side is that side of the semiconductor component on which the semiconductor component is attached to an external connection carrier, such as a circuit board.
  • the mounting side is set up in particular for fastening the semiconductor component by means of soldering or by means of electrically conductive gluing.
  • the carrier preferably comprises a plurality of electrical connection surfaces on the mounting side. It is possible for all of the electrical connection areas for external contacting of the semiconductor component to lie on the mounting side and to be formed by the carrier.
  • the semiconductor component comprises one or more optoelectronic semiconductor chips.
  • the at least one semiconductor chip is located on a main side of the carrier.
  • the main side is preferably opposite the assembly side.
  • the optoelectronic semiconductor chip is in particular a light-emitting diode chip, or LED chip for short.
  • the optoelectronic semiconductor chip can also be a superluminescent diode or a laser diode. It is possible that further semiconductor chips, such as detector chips, control chips or chips for protection against damage by electrostatic discharges, are also attached to the carrier, in particular to the main side.
  • the optoelectronic semiconductor chip contains a semiconductor layer sequence.
  • the semiconductor layer sequence has at least one active zone which is set up to generate radiation when the light-emitting diode chip is in operation.
  • the semiconductor layer sequence is preferably based on a III-V compound semiconductor material.
  • the semiconductor material is, for example, a Nitride compound semiconductor material such as Al n In ] __ nm Ga m N or a phosphide compound semiconductor material such as Al n In ] __ nm Ga m P or an arsenide
  • 0.4 ⁇ m ⁇ 1 and n + m ⁇ 0.95 and 0 ⁇ k ⁇ 0.5 apply to at least one layer or to all layers of the semiconductor layer sequence.
  • the semiconductor layer sequence can have dopants and additional components. For the sake of simplicity, however, only the essential components of the crystal lattice are shown in FIG.
  • Semiconductor layer sequence that is to say Al, As, Ga, In, N or P, is specified, even if these can in part be replaced and / or supplemented by small amounts of further substances.
  • the semiconductor chip is preferably set up to generate and emit near-ultraviolet radiation, visible light or near-infrared radiation.
  • a wavelength of maximum intensity of the radiation generated by the optoelectronic semiconductor chip during operation is at least 380 nm or 420 nm and / or at most 650 nm or 540 nm or 480 nm.
  • the optoelectronic semiconductor chip is then set up to emit blue light during operation .
  • the wavelength of maximum intensity is preferably at least 680 nm or 790 nm and / or at most 900 nm or 1050 nm.
  • the semiconductor component comprises a lens for the semiconductor chip.
  • the lens completely covers the semiconductor chip.
  • the lens is, for example, a collimating lens, in particular a converging lens, i.e. a convex lens.
  • the lens is a hemisphere or approximately a hemisphere, especially with one through a
  • the lens is preferably located centrally above the semiconductor chip.
  • the lens does not necessarily have a collimating effect, but can alternatively or additionally be present in order to reduce losses when the radiation is coupled out into a surrounding medium, such as air. This is achieved, for example, by a hemispherical shape of the lens, so that approximately only perpendicular angles of exit from the lens into the surrounding medium occur.
  • the lens protrudes laterally over the carrier in at least one cross-section or in all cross-sections perpendicular to and through the main side, in particular laterally on both sides, seen in the longitudinal direction of the carrier, i.e. as an extension of the main side.
  • the lens is preferably arranged symmetrically to the carrier as seen in cross section. That is to say, the lens preferably protrudes sideways by the same distance on both sides of the wearer.
  • the term "laterally” relates in particular in a direction parallel to the main side and perpendicular to the edges of the main side.
  • the optoelectronic semiconductor component comprises a carrier, through which a mounting side of the semiconductor component is partially formed.
  • An optoelectronic semiconductor chip is located on one main side of the carrier.
  • the semiconductor component comprises a lens for the semiconductor chip, which completely covers the semiconductor chip and which the carrier in seen at least one cross-section perpendicular to the main side and protrudes laterally on both sides in the longitudinal direction.
  • ceramic substrates with a high thermal conductivity are used in particular, especially A1N ceramic substrates.
  • AlN ceramic substrates are expensive. This is due in particular to the fact that the optoelectronic semiconductor chip, viewed in plan view, usually covers a relatively small part of an area of the semiconductor component and of the carrier.
  • the comparatively high costs for the carrier result specifically from the fact that an optically effective lens must be larger than the light source, that is to say than the optoelectronic semiconductor chip.
  • the carrier is thus designed to be relatively large in order to give the lens enough space so that the optoelectronic semiconductor chip only makes up approximately 10% to a maximum of 20% of a base area of the carrier. In the case of expensive carriers, such as AlN ceramic substrates, the carrier is thus a significant cost factor.
  • a phosphor is applied to the optoelectronic semiconductor chip, for example by means of spraying silicone and phosphor particles. This material is preferably sprayed on over the entire area, which is carried out in particular in a panel composite.
  • the phosphor can be applied with or without masking. Usually, only the portion of the phosphor that lies directly on the optoelectronic semiconductor chip or that is close to the semiconductor chip is really useful. If the semiconductor chip only makes up 10% to 20% of the area of the carrier, 80% to 90% of the Phosphor is wasted if all or almost all of the support is covered with the phosphor. This also contributes to the overall cost of the component.
  • the supports are preferably either molded flat, that is to say provided with a planarization layer by means of injection molding, pressing or casting, or provided directly with a lens before the supports are separated.
  • the carriers are then distributed over a larger area, for example on an intermediate carrier with a removable adhesive film.
  • the comparatively large, protruding lenses are then produced, in particular via compression molding. Separation is then carried out.
  • the semiconductor components have relatively large lenses.
  • the lenses thus protrude beyond the carrier. If the semiconductor components are attached, the lenses can hang in the air, there a connecting means, such as a solder or an adhesive, is attached between the semiconductor component and an external connection carrier. The component is then mechanically fastened only by means of the carrier.
  • a lens is molded into another lens, it is preferably provided that the smaller, inner lens has a higher refractive index than the outer lens, so that a kind of onion lens is formed, which has several layers with monotonous outward faces having decreasing refractive index.
  • Such lenses are described, for example, in the publication US 9081 167 B2, see in particular FIGS. 9 to 11 and 23 to 30. The disclosure content of this publication with regard to the lens shapes, especially the aforementioned figures, is incorporated by reference.
  • a stabilization layer such as a glass plate, to be laminated on the panel, for example by means of a silicone adhesive, before the carrier is separated.
  • the stabilization layer is applied in particular after the planarization layer has been produced.
  • the stabilization layer is preferably also divided, which reduces manufacturing costs, especially in comparison to individually placed and applied glass plates.
  • the individual planarization layers are then simply molded into the lenses so that any rough surfaces of the glass are also filled.
  • the material of the stabilization layer thus preferably has a refractive index as close as possible to that of the lens so that there are no or only slight optical impairments due to the stabilization layer.
  • a refractive index difference between the lens and the stabilization layer at 480 nm and 300K is at most 0.2 or 0.1 or 0.05.
  • the size of the carrier can be reduced significantly
  • Cost savings can be achieved, also by reducing the amount of phosphor to be used.
  • increased thermal cycle resistance of a soldered semiconductor component is made possible in the application, since a smaller base area is used for the carrier and thus mechanical stresses between the component and an external connection carrier, such as a circuit board, are also reduced.
  • the service life of the semiconductor component can be improved by separating the mechanical stresses of the lens from the phosphor layer by the stabilization layer. This can be achieved particularly cost-effectively by attaching the stabilization layer in a panel composite.
  • the carrier protrudes laterally all around the semiconductor chip. That is, the wearer is in A plan view of the main side is larger than the semiconductor chip, and the semiconductor chip, seen in a plan view, lies completely within the carrier and is bordered by the carrier.
  • the lens protrudes laterally all around the carrier. That is, the lens is larger than the carrier when viewed from above on the main side, the carrier lies completely within the lens and the lens forms a ring around the carrier. Side faces of the semiconductor component are therefore preferably free of the carrier.
  • the carrier comprises a ceramic plate as the carrier base body.
  • the carrier base body is a ceramic plate.
  • the ceramic is preferably A1N.
  • the carrier comprises electrical connection surfaces.
  • electrical connection surfaces are formed in particular by metallizations on the carrier base body.
  • electrical connection surfaces and optionally also thermal connection surfaces preferably both on the mounting side and on the main side.
  • the connection surfaces on the mounting side and on the main side are preferably connected to one another via electrical vias.
  • Such plated-through holes can run completely within the carrier or also be guided over side surfaces of the carrier.
  • the carrier comprises a leadframe housing assembly.
  • the ladder frame Housing assembly comprises several lead frame parts and a housing base body.
  • the lead frame parts are mechanically held together by the housing body.
  • the housing base body can have a recess in which the semiconductor chip is attached.
  • An electrical connection within the housing base body is preferably formed by the lead frame parts.
  • the lead frame parts continue to extend as far as the assembly side, so that electrical connection surfaces of the semiconductor component are formed by the lead frame parts. That is, the carrier can be a QFN carrier.
  • the carrier comprises electrical contact platforms and a potting body which laterally encloses the contact platforms.
  • the contact platforms preferably run completely through the potting body, in a direction perpendicular to the mounting side.
  • the electrical connection surfaces are preferably formed by the contact platforms. It is possible for the contact platforms to be formed by metals that are produced directly on the semiconductor chip, for example by means of electroplating.
  • the potting body preferably completely and positively encloses the contact platforms all around.
  • the potting body and the contact platforms can thus be produced starting from the semiconductor chip so that the carrier can be positively connected to the semiconductor chip and so that the carrier and the semiconductor chip can be the same size or approximately the same size when viewed from above.
  • Approximately the same size means, for example, that the base areas of the carrier and the semiconductor chip, when viewed from above on the main side, are at most by a factor of 1.2 or 1.1 or 1.05 differ from each other. That is, the carrier can be a CSP carrier.
  • the semiconductor component also comprises one or more
  • the at least one phosphor layer covers the semiconductor chip and is preferably applied directly to the semiconductor chip.
  • the phosphor layer preferably has a plastic, such as a silicone, as the matrix material.
  • Particles made of an inorganic phosphor, for example YAG: Ce, are preferably embedded in the matrix material.
  • the phosphor layer is set up to partially or completely convert radiation generated by the semiconductor chip during operation into longer-wave radiation.
  • the semiconductor component comprises a planarization layer. If a phosphor layer is also present, the planarization layer is preferably located on a side of the phosphor layer facing away from the semiconductor chip. This means that the planarization layer either covers the phosphor layer or embeds the semiconductor chip.
  • a top side of the planarization layer facing away from the carrier preferably runs parallel to the main side of the carrier.
  • the planarization layer and the carrier are preferably congruent or approximately congruent when viewed from above on the main side. Approximately congruent means in particular that the base areas of the carrier and the planarization layer differ from one another by at most a factor of 1.05 or 1.1.
  • the planarization layer is preferably made of one translucent, transparent material. Alternatively, the planarization layer can be designed as an optical filter and / or as a diffuser and / or as a partially reflecting mirror.
  • the planarization layer ends set back with respect to the carrier. That is, the carrier protrudes laterally beyond the planarization layer, preferably all around.
  • a protrusion of the carrier over the planarization layer is preferably relatively small and in particular amounts to at most 10% or 5% or 2% of an edge length of the carrier, seen in plan view of the main side.
  • the semiconductor component further comprises a stabilization layer.
  • the stabilization layer is located between the lens and the semiconductor chip.
  • the stabilization layer is preferably a glass plate or glass film, but can also be formed by a plate or film made of another material, such as a plastic.
  • the stabilization layer is glued onto the planarization layer.
  • the lens is applied directly to the stabilization layer.
  • the stabilization layer preferably covers the planarization layer completely or almost completely.
  • the planarization layer can also cover the carrier completely or almost completely. Almost completely means in particular at least 99% or 95% or 98%.
  • the semiconductor component comprises a base body.
  • the base body is located directly on the carrier.
  • the base body adjoins side surfaces of the carrier.
  • the mounting side of the carrier and the main side of the carrier are preferably free or substantially free from the base body. Essentially free means in particular that the main side and / or the assembly side are covered by the base body to a maximum of 2% or 5% or 10%.
  • the base body is preferably formed by a reflective material, in particular by a white material.
  • the base body can also be translucent, preferably transparent, alternatively also light-diffusing.
  • the base body is located partially or completely laterally next to the carrier. Completely to the side of the carrier means that the base body lies completely between two levels that are defined by the mounting side and the main side.
  • the mounting side of the semiconductor component is partially formed by the base body. It is possible that the mounting side is formed exclusively by the base body together with the carrier. That is, the base body can form a kind of foundation or base for the lens. The lens is then preferably applied directly to the base body, at least in an edge region of the semiconductor component, viewed from above on the main side.
  • the base body is designed meniscus-shaped in cross section, viewed perpendicular to the main side. That is, a thickness of the socket body takes in Direction towards the carrier steadily. This meniscus shape results, for example, from a casting process and from wetting that occurs here due to surface tension when the base body is produced.
  • the base body can also be a body with a uniform thickness or with a linear increase in thickness, so that the base body can also have plane-parallel upper sides and lower sides.
  • the base body has a maximum thickness directly on the carrier and the base body ends flush with the main side of the carrier.
  • the base body has a maximum thickness directly on the upper side of the planarization layer and the base body ends flush with the planarization layer.
  • the stabilization layer has a maximum thickness directly on the stabilization layer and ends flush with the stabilization layer.
  • the semiconductor component comprises a support frame.
  • the support frame ends at a distance from the carrier. That is, the carrier and the support frame do not touch. It is possible for the support frame to surround the carrier all around in a frame-like or ring-like manner when viewed from above on the main side.
  • the support frame is located partially or completely laterally next to the carrier.
  • the support frame is located entirely in an area between the two planes defined by the main side and the mounting side.
  • the mounting side of the semiconductor component is partially formed by the support frame.
  • the mounting side is formed either exclusively by the support body together with the carrier and together with the lens or exclusively by the support frame together with the carrier and together with the base body.
  • the mounting side is partially formed by the lens.
  • the mounting side is formed exclusively by the lens together with the carrier.
  • the semiconductor component comprises an inner lens and / or a chip lens.
  • the inner lens and / or the chip lens are preferably enclosed by the lens.
  • the inner lens and / or the chip lens preferably have a greater refractive index than the lens which forms a component top side and a lens top side.
  • a method for producing optoelectronic semiconductor components is specified.
  • the method is preferably used to produce semiconductor components, as described in connection with one or more of the above-mentioned embodiments.
  • Features of the semiconductor component are therefore also disclosed for the method and vice versa.
  • the method comprises the following steps, in particular in the specified order:
  • the lenses are applied directly to the associated
  • Planarization layers applied. This means that there are then no further components between the lenses and the planarization layers.
  • the phosphor layers are produced on the respective carriers by means of spraying. If a masking layer is used in this case, a separate phosphor layer is preferably produced for each carrier, so that there are no continuous internal material connections between adjacent phosphor layers immediately after the production of the phosphor layers. Alternatively, it is possible to produce a continuous starting layer for the phosphor layers, which is divided up with the carriers to form the individual phosphor layers.
  • the planarization layers are applied directly to the phosphor layers or directly to the semiconductor chips by means of pressing and / or spraying prior to step B). The planarization layers are then created in step B) by the singulation.
  • the method comprises a step F).
  • Step F) is preferably carried out between steps A) and B).
  • step F) a plate or film for the stabilization layers is glued or laminated on, preferably on the planarization layers that have not yet been divided.
  • the planarization layers are produced from the plate or film in step B). That is, the plate or foil becomes the
  • Isolated planarization layers In this way, the plate or film can still be applied in the panel composite.
  • the lenses are applied directly to the associated stabilization layers.
  • the stabilization layers are thus located between the lenses and the phosphor layer. It is possible that there is no direct connection between the lenses and the phosphor layer in the respective semiconductor components.
  • FIG. 1 shows a schematic sectional illustration of a modification of an optoelectronic semiconductor component
  • FIGS. 2 to 14 are schematic sectional illustrations of exemplary embodiments of the optoelectronic semiconductor components described here,
  • FIG. 15 schematic sectional views of
  • FIGS. 16 to 20 are schematic sectional representations of steps in one of the steps described here
  • FIGS. 21 to 25 are schematic sectional illustrations of method steps of a further method described here for producing exemplary embodiments of optoelectronic semiconductor components
  • Figure 26 is a schematic plan view of the
  • FIG. 27 shows a schematic perspective top view of the assembly side of an exemplary embodiment of an optoelectronic semiconductor component described here.
  • a modification 9 of a semiconductor component is shown.
  • the modification 9 comprises a carrier 2.
  • An optoelectronic semiconductor chip 3, in particular an LED chip, is located on the carrier 2.
  • the semiconductor chip 3 is followed by a phosphor layer 51.
  • a lens 4 is also located above the carrier 2.
  • the lens 4 is large relative to the semiconductor chip 3 and is flush with the carrier 2 in the lateral direction. In order to carry the lens 4 completely, the carrier 2 is therefore comparatively large. This results in comparatively high costs in the case of expensive carriers 2, for example based on a ceramic.
  • the carrier 2 is preferably a ceramic carrier, in particular with a carrier base body 22 made of A1N.
  • a plurality of electrical and optionally also thermal connection surfaces 21, for example formed by metallizations, are located on the carrier base body 22.
  • the connection areas 21 on a main side 20, on which the at least one optoelectronic semiconductor chip 3 is located, and on a mounting side 61 are preferably connected to one another via a plurality of electrical vias 23.
  • the semiconductor chip 3 is set up, for example, to generate blue light and is located, in particular, in the center on the main side 20
  • Semiconductor chips 3 are optionally covered by a ramp 54, which has a steadily increasing thickness towards the semiconductor chip 3, wherein instead of the ramp 54 a planar reflector can also be present or such a reflector or such a ramp 54 can be omitted completely, as in all of them other embodiments possible.
  • a planar reflector or no reflector is not readily possible with designs as shown in FIG. 1, since the base of the lens 4, i.e. the area with the side surfaces 44, has to be lower than laterally freely radiating areas of the semiconductor chip for ideal radiation extraction 3.
  • the optional ramp 54 is made of a reflective, white material, for example.
  • the ramp 54 is made of a silicone that is filled with reflective particles, such as titanium dioxide particles.
  • Such a ramp 54 is optionally also present in all other exemplary embodiments.
  • the semiconductor chip 3 is followed by the phosphor layer 51 in the direction away from the carrier 2.
  • the phosphor layer 51 is produced, for example, by means of spraying. It is possible for the phosphor layer 51 to comprise a matrix material, for example a silicone, and phosphor particles embedded therein.
  • the phosphor layer 51 preferably completely covers the semiconductor chip 3. Due to the optional ramps 54, the phosphor layer 51 rises continuously without cracks to the level of a main emission side 30 of the semiconductor chip 3. Such a phosphor layer 51 is optionally also present in all exemplary embodiments.
  • the semiconductor component 1 comprises a planarization layer 52, for example made of a transparent silicone.
  • An upper side facing away from the carrier 2 53 of the planarization layer 52 is preferably designed to be flat.
  • the planarization layer 52 can end flush with the carrier 2 in the lateral direction.
  • a thickness of the planarization layer 52 is preferably selected such that optionally present bonding wires 55 are completely covered by the planarization layer 52.
  • Planarization layer 52 can be produced, for example, by means of compression molding.
  • the composite of the carrier 2, the semiconductor chip 3, the phosphor layer 51 and the planarization layer 52 is embedded in the lens 4.
  • the lens 4 is made of a silicone, for example.
  • the carrier 2 has a smaller extent in the lateral direction than the lens 4. In particular, the carrier 2 is located symmetrically in the lens 4.
  • the lens 4 is flush with the carrier 2 on a mounting side 61.
  • the mounting side 61 of the semiconductor component 1 is thus formed by the lens 4 together with the carrier 2.
  • thermal and electrical contacting of the semiconductor component 1 takes place only via the connection surfaces 21 of the carrier 2 Lens 4 itself is not in direct contact with the connection carrier.
  • the lens 4 preferably has a base region, the thickness of which exceeds, for example, a thickness of the carrier 2, but is preferred is thinner than the carrier 2 together with the
  • Planarization layer 52 A lens top 40 is thus at the same time a component top.
  • the thickness of the base region is less than the thickness of the carrier 2, as is also possible in all other exemplary embodiments.
  • a diameter of an optically effective region of the lens is, for example, between 1.2 times and 1.6 times a diagonal length of the semiconductor chip 3, seen in plan view of the main side 20.
  • the optically effective area of the lens 4 is preferably designed hemispherical in cross section.
  • the planarization layer 52 preferably completely or almost completely covers a main side 20 of the carrier 2 to which the semiconductor chip 3 is attached.
  • the semiconductor component 1 additionally comprises a base body 6.
  • the base body 6 is preferably a potting body.
  • the base body 6 is, for example, transparent or light-scattering or reflective.
  • the base body 6 is made of a silicone with reflective particles, such as titanium dioxide particles.
  • the base body 6 becomes continuously thicker and is formed laterally on the carrier 2 and on the planarization layer 52.
  • This shaping with a meniscus-shaped top side 60 of the base body 6 is created in particular by wetting the planarization layer 52 with a material for the base body 6.
  • the base body 6 is thus flush with the top side 53 of the planarization layer 52.
  • the assembly side 61 is thus completely formed by the base body 6 together with the carrier 2.
  • the lens 4 sits on the base body 6 together with the planarization layer 52.
  • the base body 6 only extends as far as the main side 20 of the carrier 2.
  • the planarization layer 52 can be narrower than the carrier 2. That is, the planarization layer 52 can end offset from the main page 20.
  • the planarization layer 52 preferably completely embeds the phosphor layer 51, so that the planarization layer 52 completely covers the phosphor layer 51 when viewed from above on the main side 20.
  • the semiconductor component 1 additionally comprises a stabilization layer 56, for example in the form of a glass plate.
  • the stabilization layer 56 preferably covers the planarization layer 52 and thus the carrier 2 completely or almost completely. A thickness of the
  • Stabilization layer 56 is, for example, between 0.1 mm and 0.4 mm, in particular around 150 ⁇ m.
  • the explanations for FIG. 2 apply accordingly to FIG. 5.
  • the semiconductor component 1 has both the base body 6 and the stabilization layer 56.
  • the top 60 of the base body 6 is again designed in the shape of a meniscus.
  • the base body 6 ends flush with an upper side of the stabilization layer 56 facing away from the carrier 2.
  • a support frame 7 is located on the assembly side 61.
  • the support frame 7 preferably runs around the carrier 2.
  • There is a distance between the carrier 3 and the support frame 7 which, according to FIG. 7, can be completely filled by a material of the lens 4.
  • the mounting side 61 is thus formed by the support frame 7 together with the carrier 3 and together with a narrow region of the lens 4 around the carrier 3.
  • the support frame 7 is, for example, a reflective material, for example made of a ceramic, or, preferably, made of a reflective plastic such as a white epoxy. In order to ensure sufficient mechanical stability, the support frame 7 can have a greater thickness than the carrier 2. However, the support frame 7 is preferably thinner than the carrier 2 and the planarization layer 52 taken together. Otherwise, the statements relating to FIG. 2 apply accordingly to FIG. 7.
  • the support frame 7, as shown in FIG. 8, is for example made of a comparatively mechanically stable material, such as a metal, in particular made of aluminum or copper or an aluminum alloy or a copper alloy.
  • a thickness of the support frame 7 is therefore preferably smaller than a thickness of the carrier 2.
  • the support frame 7 according to FIG. 9 is designed, in particular, as explained in connection with FIGS. 7 or 8.
  • the base body 6, as illustrated in FIG. 9, corresponds to the base body of FIG. 3.
  • base bodies can also be used, in particular as illustrated in FIGS. 4 or 6. That is to say, the stabilization layer 56 can also be present in the exemplary embodiment in FIG. 9.
  • the exemplary embodiment of the semiconductor component 1 according to FIG. 10 comprises an inner lens 41, which can correspond to the planarization layer 52 of the other exemplary embodiments.
  • the lens 4 is designed directly around this inner lens 41, so that the component top 40 is formed by the lens 4.
  • the inner lens 41 closes flush with the side Carrier 2 from.
  • the side surfaces 44 of the semiconductor component 1 are thus formed exclusively by the lens 4.
  • the mounting side 61 is formed exclusively by the lens 4 together with the carrier 2.
  • the base body 6 can also be present.
  • the base body 6 preferably ends flush with a base of the inner lens 41.
  • the base of the inner lens 41 is, for example, approximately level with the main emission side 30 of the semiconductor chip 3.
  • the base of the inner lens 41 can be separated from an optically effective region of the inner lens 41 by a sharp bend.
  • FIG. 12 there is also a chip lens 42 which is flush with the side of the semiconductor chip 3.
  • the inner lens 41 and the lens 4 are arranged around this chip lens 42 in the shape of an onion.
  • the base bodies 6 of FIGS. 3 or 4 can also be present in the semiconductor components of FIGS. 10 to 12.
  • Support frames 7 can also be used, possibly in combination with base bodies 6, as illustrated in FIGS. 7 to 9. It can also be seen from FIG. 12 that the phosphor layer 51 is only optionally present in the other exemplary embodiments.
  • a radiation characteristic of the semiconductor component 1 can be set more precisely through the base body 6 and / or through the support frame 7. In particular, radiation at the assembly 61 can be prevented.
  • the carrier 2 is a QFN design.
  • the carrier 2 thus comprises a plurality of lead frame parts 24 which are embedded in a housing base body 25.
  • the housing base body 25 optionally has a recess in which the semiconductor chip 3 is located.
  • the ramp 54 is located in the recess.
  • the phosphor layer 51 is preferably followed by the planarization layer 52, which can end flush with the housing base body 25.
  • the lens 4 in turn protrudes laterally beyond the carrier 2.
  • the carrier 2 is formed from electrical contact platforms 26, which also represent the connection surfaces 21.
  • the contact platforms 26 are embedded in a potting body 27 of the carrier 2. It is possible for the semiconductor chip 3 to end flush or approximately flush with the carrier 2 in the lateral direction.
  • the base body 6 also ends flush with an upper side of the phosphor layer 51 facing away from the semiconductor chip 3.
  • FIGS. 13 and 14 essentially correspond to the exemplary embodiment in FIG. 3, only with a different carrier 2.
  • FIG. 15 exemplary embodiments of semiconductor chips 3 for the optoelectronic semiconductor components 1 are illustrated.
  • the semiconductor chip 3 has a Semiconductor layer sequence 32 with an active zone 33 for generating radiation. Electrical chip contacts 34 are used to energize the semiconductor chip 3.
  • a power distribution structure 35 is optionally available. It is possible that the semiconductor layer sequence 2 is still located on a growth substrate 31.
  • the main emission side is located
  • a plurality of vias 37 are present in the semiconductor layer sequence 32 which run through the active zone 33. Furthermore, a current is supplied through a mirror 36.
  • the mirror 36 The mirror
  • the semiconductor chips 3 in FIG. 15 are each designed as flip chips.
  • semiconductor chips 3 can be used in all exemplary embodiments, which have electrical chip contacts 34 on both main sides. That is to say, for example, in this case the mirror 36 would be attached to the vias
  • the growth substrate 31 is optionally still present and can have a structure for improved light extraction on the main emission side 30.
  • the semiconductor chip 3 of the FIG. 15, right-hand side is used, for example, in the designs according to FIG. 14, but can also be used in the same way with the designs in FIGS. 2 to 12.
  • FIGS. 16 to 20 An exemplary embodiment of a production method is illustrated in FIGS. 16 to 20.
  • a carrier assembly 81 is provided which comprises a multiplicity of carriers 2.
  • the carriers 2 are still connected to one another.
  • the semiconductor chips 3 and the phosphor layers 51 are already applied to the carriers 2.
  • Planarization layer 52 is produced as a continuous layer extending over all carriers 2. That is to say, the planarization layer 52 is still produced in the carrier assembly 81.
  • separation into the separate carriers 2 takes place through the planarization layer 52 and through the carrier base body 22.
  • the individual carriers 2 are attached to a temporary auxiliary carrier 83, so that there is an intermediate space 84 between the individual carriers 2 and the carriers 2 can be processed together.
  • the optional base body 6 is produced.
  • the base body 6 can completely fill the previously existing space 84, see FIG. 18. If the base body 6 is produced by means of pressing or injection molding, the base body 6 can end flush with the top side 53 of the planarization layer 52 and lie in a common plane with the planarization layer 52.
  • FIG. 20 it is shown that the lens 4 is produced on the planarization layer 52 and on the base body 6, preferably from a lens composite. The auxiliary carrier 83 is then detached.
  • the semiconductor components 1 are separated by a lens assembly and through the base body 6 in an area between adjacent carriers 2.
  • the base body 6 makes it possible to achieve that the components 1 can be detached from the auxiliary carrier 3 more easily. This is particularly the case when the base body 6 is produced by means of casting and thus adheres comparatively poorly to the auxiliary carrier 83.
  • the lenses 4 are preferably produced by means of pressing or injection molding, in particular by means of compression molding.
  • FIGS. 21 to 25 Another manufacturing method is illustrated in FIGS. 21 to 25.
  • the method step in FIG. 21 corresponds to the method steps in FIGS. 16 and 17.
  • the stabilization layers 56 are also applied in the carrier composite 81 in the form of, for example, a coherent glass plate, for example glued on, it being possible for a silicone adhesive to be used.
  • the base body 6 is optionally produced, corresponding to the exemplary embodiment in FIG. 6.
  • FIG. 24 illustrates that the lens composite 82 is produced, in particular by means of compression molding.
  • the semiconductor components 1 have been separated by the lens assembly 82 and by the base body 6.
  • the intermediate carrier 83 is also detached.
  • FIGS. 16 to 20 and FIGS. 21 to 25 relate by way of example to the exemplary embodiments similar to FIGS. 3 and 6.
  • the exemplary embodiments of FIGS. 2, 4, 5 and 7 to 14 can be produced in the same way.
  • the supports of FIGS. 2, 13 or 14 can be used as well as the different variants of the base body 6, the support frame 7 and the stabilization layers 56, optionally with several lenses 4, 41, 42 and each optionally with the fluorescent layer 51 and the planarization layer 52 .
  • FIG. 26 shows a schematic plan view of the semiconductor component 1, as illustrated in cross section in FIG. It can be seen that an optically effective area of the lens 4 is designed in particular circular and is arranged symmetrically around the carrier 2.
  • a base area of the lens 4, on the other hand, has a square or rectangular shape.
  • the semiconductor chip 3 is square when seen in plan view and the phosphor layer 51 is likewise, for example, circular when seen in plan view.
  • the assembly side 61 is, for example, completely formed by the lens 4 together with the carrier 2.
  • the electrical connection surfaces 21 are limited to an area with the carrier 2 and the lens 4 projects significantly all around above the carrier 2 in the form of a frame.
  • a projection of the lens 4 over the carrier 2 is, for example, all around at least 10% or 20% and / or at most 50% or 40% or 30% of a mean edge length of the carrier 2.
  • the components shown in the figures preferably follow one another in the specified order, in particular directly one after the other, unless otherwise described.
  • Components that do not touch one another in the figures are preferably at a distance from one another. If lines are drawn parallel to one another, the assigned surfaces are preferably aligned parallel to one another. In addition, the relative positions of the components drawn are shown correctly in the figures, unless otherwise described.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

Dans un mode de réalisation, un composant semi-conducteur optoélectronique (1) comprend un support (2), proche duquel un côté d'assemblage (61) du composant semi-conducteur (1) est partiellement formé. Une puce semi-conductrice optoélectronique (3) est située sur un côté principal (20) du support (2). Le composant semi-conducteur (1) comprend en outre une lentille (4) pour la puce semi-conductrice (3), qui recouvre entièrement la puce semi-conductrice (3) et qui fait saillie latéralement par rapport au support (2) des deux côtés dans au moins une section transversale, lorsqu'elle est vue perpendiculairement au côté principal (20).
PCT/EP2021/063301 2020-05-28 2021-05-19 Composant semi-conducteur optoélectronique et procédé de fabrication de composants semi-conducteurs optoélectroniques WO2021239542A1 (fr)

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DE102020114368.0 2020-05-28
DE102020114368.0A DE102020114368A1 (de) 2020-05-28 2020-05-28 Optoelektronisches halbleiterbauteil und verfahren zur herstellung von optoelektronischen halbleiterbauteilen

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