WO2021212780A1 - Jonction à effet tunnel magnétique et son procédé de fabrication - Google Patents

Jonction à effet tunnel magnétique et son procédé de fabrication Download PDF

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Publication number
WO2021212780A1
WO2021212780A1 PCT/CN2020/121892 CN2020121892W WO2021212780A1 WO 2021212780 A1 WO2021212780 A1 WO 2021212780A1 CN 2020121892 W CN2020121892 W CN 2020121892W WO 2021212780 A1 WO2021212780 A1 WO 2021212780A1
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WIPO (PCT)
Prior art keywords
layer
magnetic
tunnel junction
seed
seed layer
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PCT/CN2020/121892
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English (en)
Chinese (zh)
Inventor
孙一慧
孟凡涛
蒋信
韩谷昌
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浙江驰拓科技有限公司
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Publication of WO2021212780A1 publication Critical patent/WO2021212780A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Definitions

  • the invention relates to the technical field of magnetic memory, in particular to a magnetic tunnel junction and a manufacturing method thereof.
  • MRAM Magnetic Tunnel Junction
  • MRAM Magnetic Random Access Memory
  • Ferromagnetic MTJ is usually a sandwich structure, which has a free layer, which can change the magnetization direction to record different data; an insulating barrier layer located in the middle; a reference layer, located on the other side of the barrier layer, its magnetization direction is Changeless.
  • the resistance state of the MTJ element is also a low resistance state or a high resistance state respectively. In this way, the stored information can be obtained by measuring the resistance state of the MTJ element.
  • Perpendicular Magnetic Tunnel Junction is a magnetic tunnel junction with a magnetic moment perpendicular to the surface of the substrate. According to the relative position of the reference layer and the free layer, the vertical magnetic tunnel junction is divided into top type (the reference layer is at the top). Top) and bottom type (reference layer below) pMTJ.
  • top type the reference layer is at the top
  • bottom type reference layer below
  • PMA Perpendicular Magnetic Anisotropy
  • the easy magnetization directions are perpendicular to the layer surface.
  • the size of the pMTJ element can be made smaller than the in-plane MTJ element, the magnetic polarization error in the easy magnetization direction can be made small, and the size of the MTJ element can be reduced so that the required switching current can be correspondingly Decrease.
  • the vertical magnetic tunnel junction pMTJ using PMA has high thermal stability and low switching current.
  • how to improve the PMA of each magnetic layer in the pMTJ and provide a flat substrate for the pMTJ has become an urgent need to solve The problem.
  • the present invention provides a magnetic tunnel junction and a manufacturing method thereof, which can improve the perpendicular magnetic anisotropy of each magnetic layer.
  • the present invention provides a magnetic tunnel junction, which includes a first seed layer, a second seed layer, a magnetic pinned layer, a barrier layer, a magnetic free layer, and a cover layer which are sequentially stacked, wherein:
  • the first seed layer includes a non-nickel alloy formed by one of cobalt, iron or a combination of boron, and is used to provide a flat and lattice-matched substrate for the second seed layer;
  • the second seed layer is located on the top surface of the first seed layer and includes a nickel-chromium alloy
  • the magnetic pinned layer is adjacent to the second seed layer, and the magnetization direction of the magnetic pinned layer is unchanged and perpendicular to the surface of the magnetic pinned layer film;
  • the magnetization direction of the magnetic free layer is variable and perpendicular to the surface of the magnetic free layer film
  • the barrier layer is located between the magnetic pinned layer and the magnetic free layer;
  • the cover layer is located on the top surface of the magnetic free layer and is used to protect the magnetic free layer.
  • the material of the first seed layer includes one or more of CoB, FeB and CoFeB.
  • the material of the second seed layer includes one or more of NiCr and NiFeCr.
  • the thickness of the first seed layer is between 1 and 5 nanometers.
  • the thickness of the second seed layer is between 1-10 nanometers.
  • the magnetic pinned layer includes a synthetic antiferromagnetic pinned layer, a magnetic spacer layer, and a magnetic reference layer, wherein:
  • the structure of the synthetic antiferromagnetic pinning layer is [Co/X]n/Co/Y/Co/[X/Co]m, where X is one of Ni, Pd or Pt, and the thickness of X is between At 0.2-1.0 nm, Y is one of Ru or Ir, the thickness of Y is between 0.4-0.9 nm, n and m are the number of superlattice layers, n is 3-8 layers, and m is 0-6 layers;
  • the magnetic reference layer includes various combinations of CoFeB, the magnetic reference layer has an amorphous structure before annealing, and transforms into a body-centered cubic lattice structure after annealing;
  • the magnetic spacer layer uses one of Ta, W, Mo, Hf, V, Zr and alloys thereof.
  • the barrier layer is made of MgO, MgZnO or MgAlO, and the thickness of the barrier layer is between 0.5-2 nanometers.
  • the magnetic free layer adopts CoFeB, CoFeB/Fe or CoFeB/ ⁇ /CoFeB, where ⁇ is one of Ta, Mo, W, Hf, Zr or Fe, and the thickness of the magnetic free layer is between 0.5-5 nanometers; the magnetic free layer changes from an amorphous structure to a body-centered cubic lattice structure after annealing.
  • the covering layer is made of at least one oxide of Mg and Al, and the thickness of the covering layer is between 0.2-2 nanometers.
  • the present invention provides a method for manufacturing a magnetic tunnel junction, which includes the following steps:
  • Annealing is performed after the formation of the magnetic tunnel junction multilayer film, the annealing temperature is 300-450°C, and the annealing time is 0.2-2 hours.
  • the magnetic tunnel junction and the manufacturing method thereof provided by the present invention utilize two seed layers to deposit a NiCr seed layer on the cobalt-iron-boron seed layer, and NiCr diffuses into the magnetic fixed layer, so that the magnetic moment direction of the magnetic fixed layer is changed. Vertical and more stable; the stable magnetic pinned layer can make the magnetic free layer flip more stable, and the RH loop uniformity is better.
  • FIG. 1 is a schematic structural diagram of a magnetic tunnel junction provided by an embodiment of the present invention
  • FIG. 2 is a process flow diagram of a method for manufacturing a magnetic tunnel junction according to an embodiment of the present invention.
  • the magnetic tunnel junction includes: a first seed layer 10, a second seed layer 20, a magnetic pinned layer 30, a barrier layer 40, and a magnetic Free layer 50 and cover layer 60.
  • the first seed layer 10 adopts a non-nickel alloy formed by one or a combination of cobalt and iron with boron, such as CoB, FeB, CoFeB, etc., with a thickness ranging from 1-5 nanometers.
  • the first seed layer 10 is the second
  • the seed layer 20 provides a flat and lattice-matched substrate.
  • the second seed layer 20 is made of a material containing a nickel-chromium alloy, such as NiCr, NiFeCr, etc., with a thickness in the range of 1-10 nanometers.
  • a nickel-chromium alloy such as NiCr, NiFeCr, etc.
  • the magnetization direction of the magnetic pinned layer 30 is constant and perpendicular to the surface of the magnetic pinned layer film, which in turn includes:
  • the first superlattice multilayer film 301 has a structure of [Co/X]n, where the thickness of Co is generally 0.3-0.6 nanometers, X is Ni, Pd or Pt, the thickness is generally 0.2-1.0 nanometers, and n is generally selected as 3-8;
  • the thickness of the first Co layer 302 is generally 0.4-0.6 nanometers
  • the AP coupling layer 303 is generally Ru or Ir, and the thickness is generally 0.4-0.9 nm;
  • the thickness of the second Co layer 304 is generally 0.4-0.6 nanometers
  • the second superlattice multilayer film 305 has a structure of [X/Co]m, where the thickness of Co is generally 0.3-0.6 nanometers, X is Ni, Pd or Pt, the thickness is generally 0.2-1.0 nanometers, and m is generally selected as 0-6;
  • the magnetic spacer layer 306 is made of one of Ta, W, Mo, Hf, V, Zr and alloys thereof, and the thickness is generally 0.2-0.5 nanometers;
  • the magnetic reference layer 307 includes various combinations of CoFeB, and the thickness is generally 0.5-1.5 nanometers.
  • the magnetic reference layer 307 has an amorphous structure before annealing, and transforms into a body-centered cubic (BCC) lattice structure after annealing.
  • BCC body-centered cubic
  • the first superlattice multilayer film 301, the first Co layer 302, the AP coupling layer 303, the second Co layer 304, and the second superlattice multilayer film 305 together constitute a synthetic antiferromagnetic (SAF) pinning layer , Used to pin the magnetization direction of the magnetic reference layer 307.
  • SAF synthetic antiferromagnetic
  • the barrier layer 40 is made of dielectric insulating materials, such as oxide insulating materials such as MgO, MgZnO, MgAlO, etc., and the preferred thickness is in the range of 0.5-2 nanometers.
  • the magnetization direction of the magnetic free layer 50 is variable and perpendicular to the surface of the magnetic free layer film, which adopts CoFeB, CoFeB/Fe or CoFeB/ ⁇ /CoFeB, where ⁇ is one of Ta, Mo, W, Hf, Zr or Fe ,
  • the preferred thickness range is 0.5-5 nanometers.
  • the magnetic free layer 50 has an amorphous structure before annealing, and transforms into a body-centered cubic (BCC) lattice structure after annealing.
  • BCC body-centered cubic
  • the covering layer 60 uses at least one of Mg and Al oxides, such as MgO and MgAlO, and the thickness of the covering layer 60 is between 0.2-2 nanometers.
  • the above embodiments have obtained the magnetic tunnel junction multilayer film.
  • the formed magnetic tunnel junction multilayer film is subjected to high-temperature annealing, and the temperature range is between 300-450°C.
  • the non-magnetic reference layer 307 and the magnetic free layer 50 are The crystalline CoFeB transforms into a body-centered cubic (BCC) lattice structure.
  • the first seed layer 10 cannot be too thick. If the first seed layer 10 is too thick, it will cause too strong magnetism and become in-plane, affecting the magnetization direction of the magnetic pinned layer 30; The layer 20 cannot be too thin. If the second seed layer 20 is too thin, it will lose its role as a stress buffer layer and cannot provide a flat base for the magnetic pinned layer 30, but the first seed layer 10 and the second seed layer 20 The two do not have a certain relative thickness requirement.
  • the magnetic tunnel junction provided in this embodiment uses two seed layers to deposit a NiCr seed layer on the cobalt-iron-boron seed layer, and NiCr diffuses into the first superlattice multilayer film (such as Co/Pt),
  • the elastic stress caused by the lattice mismatch provides the stronger PMA of the first superlattice; after the stronger PMA is coupled through SAF, the direction of the magnetic moment of the magnetic reference layer is more vertical and more stable; the stable magnetic reference layer It can make the free layer flip more stable, and the RH loop has better uniformity.
  • FIG. 2 shows the entire process flow of the manufacturing method, which specifically includes the following steps:
  • a magnetic free layer is formed on the barrier layer
  • a covering layer is formed on the magnetic free layer, and a magnetic tunnel junction multilayer film is formed so far;
  • Annealing is performed after the formation of the magnetic tunnel junction multilayer film, the annealing temperature is 300-450°C, and the annealing time is 0.2-2 hours.

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  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)

Abstract

Jonction à effet tunnel magnétique et son procédé de fabrication. La jonction à effet tunnel magnétique comprend une première couche de germes cristallins, une seconde couche de germes cristallins, une couche piégée magnétique, une couche barrière, une couche libre magnétique et une couche de coiffage qui sont empilées de manière séquentielle ; la première couche de germes cristallins contient un alliage de non-nickel formé par du bore et l'un parmi le cobalt et le fer ou une combinaison de ceux-ci, et la seconde couche de germes cristallins contient un alliage de nickel-chrome. Selon la présente invention, l'anisotropie magnétique perpendiculaire de chaque couche magnétique est améliorée à l'aide de la seconde couche de germes cristallins contenant l'alliage de nickel-chrome.
PCT/CN2020/121892 2020-04-21 2020-10-19 Jonction à effet tunnel magnétique et son procédé de fabrication WO2021212780A1 (fr)

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CN202010319852.2A CN111509120A (zh) 2020-04-21 2020-04-21 磁性隧道结及其制造方法
CN202010319852.2 2020-04-21

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Publication number Priority date Publication date Assignee Title
CN111509120A (zh) * 2020-04-21 2020-08-07 浙江驰拓科技有限公司 磁性隧道结及其制造方法
CN114335329B (zh) * 2022-03-16 2022-06-17 波平方科技(杭州)有限公司 一种具有高抗磁场干扰能力的磁性随机存储器

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JP2015041392A (ja) * 2013-08-20 2015-03-02 国立大学法人 筑波大学 磁性材料、垂直磁気記録媒体、磁気記憶装置、磁性材料の製造方法及び垂直磁気記録媒体の製造方法
CN107534081A (zh) * 2015-03-18 2018-01-02 汉阳大学校产学协力团 存储器件
CN108232003A (zh) * 2016-12-21 2018-06-29 上海磁宇信息科技有限公司 一种垂直型磁电阻元件及其制造方法
CN110710009A (zh) * 2017-05-19 2020-01-17 台湾积体电路制造股份有限公司 降低磁性装置中的薄膜粗糙度的多层结构
US20200043981A1 (en) * 2014-05-21 2020-02-06 Avalanche Technology, Inc. Multilayered Seed for Magnetic Structure
CN111509120A (zh) * 2020-04-21 2020-08-07 浙江驰拓科技有限公司 磁性隧道结及其制造方法

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US9490054B2 (en) * 2012-10-11 2016-11-08 Headway Technologies, Inc. Seed layer for multilayer magnetic materials
US9634237B2 (en) * 2014-12-23 2017-04-25 Qualcomm Incorporated Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices
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Patent Citations (7)

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CN103531707A (zh) * 2012-07-03 2014-01-22 中国科学院物理研究所 磁性隧道结
JP2015041392A (ja) * 2013-08-20 2015-03-02 国立大学法人 筑波大学 磁性材料、垂直磁気記録媒体、磁気記憶装置、磁性材料の製造方法及び垂直磁気記録媒体の製造方法
US20200043981A1 (en) * 2014-05-21 2020-02-06 Avalanche Technology, Inc. Multilayered Seed for Magnetic Structure
CN107534081A (zh) * 2015-03-18 2018-01-02 汉阳大学校产学协力团 存储器件
CN108232003A (zh) * 2016-12-21 2018-06-29 上海磁宇信息科技有限公司 一种垂直型磁电阻元件及其制造方法
CN110710009A (zh) * 2017-05-19 2020-01-17 台湾积体电路制造股份有限公司 降低磁性装置中的薄膜粗糙度的多层结构
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