WO2021206036A1

WO2021206036A1 - Cold fusion device, and heat generation device and heat generation method using cold fusion

Info

Publication number: WO2021206036A1
Application number: PCT/JP2021/014437
Authority: WO
Inventors: 児玉　紀行
Original assignee: 児玉　紀行
Priority date: 2020-04-07
Filing date: 2021-04-05
Publication date: 2021-10-14

Abstract

The present invention addresses the problem of providing a novel cold fusion device, heat generation method, and heat generation device that can stably and continuously achieve a heat generation phenomenon using a hydrogen-storing metal. In this cold fusion device, a hydrogen-storing metal substrate and a flat plate-shaped counter electrode are provided in a reactor, said hydrogen-storing metal substrate comprising a metal that occludes deuterium, and said counter electrode being provided facing the hydrogen-storing metal substrate and being for controlling the surface potential of the hydrogen-storing metal substrate. Treating the hydrogen-storing metal substrate as a reference, when a positive voltage is applied to the counter electrode, hydrogen occlusion in which the deuterium moves into the hydrogen-storing metal substrate occurs, and when a negative voltage is applied to the counter electrode, cold fusion occurs due to the deuterium that has diffused from the interior of the hydrogen-storing metal substrate to the surface.

Description

Cold fusion device, heat generation method and heat generation device by cold fusion

The present invention relates to a heat generating technique using a hydrogen storage metal.

Fleischmann's and Pons published a shocking paper in March 1989 that a fusion reaction occurs at room temperature, which attracted worldwide attention, but due to reproducibility problems, initially It was not recognized in mainstream academic societies. Nevertheless, the steady research of some researchers has improved the reproducibility of the phenomenon, and based on the accumulation of many experimental facts, cold fusion (Cold Fusion) and low energy nuclear reaction (LENR) are now available. It is called Reaction), and active research is continuing. The subject of their research is part of cold fusion, and is now called FPE (Fleischmann and Pons Effect). As will be described later, FPE is a part of cold fusion, but it also has major drawbacks, so it will be described separately below. Most of the current experimental results are based on FPE with one exception.

It cannot be said that the mechanism of cold fusion and FPE has been elucidated, and the current situation is that the stupor state continues theoretically. From the experimental results so far, it has been found that when the deuterium storage rate (D / Pd ratio) exceeds 0.85 on a volume average, excess heat is generated and increases exponentially (Non-Patent Document 1). For this reason, cold fusion requires that the deuterium density of the hydrogen storage alloy be above a certain level, and in various experiments, it is very important that it is a surface reaction and that the nano-sized structure of the surface is particularly important. It is believed that there are (Non-Patent Document 1, Non-Patent Document 2).

For example, Patent Document 1 describes that when the size of metal particles such as palladium is 1 nm or less, the amount of hydrogen absorbed increases sharply, and nano-sized metal particles are pressurized in a deuterium environment. Discloses a method of generating excess enthalpy in.

Further, according to Patent Document 2, zirconia (Z rO ₂ ) is used as a support, palladium (Pd) nanoparticles are embedded in the support, deuterium (D ₂ ) is injected, and then pressure is applied. By occluding this, a fusion reactant (ultra-high density deuterated nanoparticles) is prepared; then a fusion reaction is carried out by applying impact energy to the fusion reactant to generate a large amount of heat and helium. It is stated that it was made.

Further, according to Patent Document 3, it is explained that "the probability of occurrence of a tunnel fusion reaction increases" by forming a plurality of nano-sized metal nano-convex portions on the surface of a hydrogen storage metal. Further, according to Patent Document 3, by supplying deuterium gas to the reactant heated by the heater, "hydrogen atoms are occluded in the metal nanoparticles on the surface of the reactant, and the electrons in the metal nanoparticles are surrounded. It is strongly influenced by metal atoms and other electrons and acts as deuterium electrons, and as a result, the internuclear distance between hydrogen atoms in the metal nanoparticles is shortened, increasing the probability that a tunnel fusion reaction will occur. " Has been done.

In general, "nuclear fusion" is defined as an exothermic reaction in which light elements are fused and converted into a heavy element, and a DT reaction in which deuterium (D) and tritium (T) react with each other. Various fusion reactions are known, such as the DD reaction in which two deuteriums react. In the DD reaction, helium (He) is produced as "ash", but research results have shown that He is produced by cold fusion (for example, Non-Patent Document 3). Also from the lower reproducibility of the disadvantages in cold nuclear fusion reactor based on a FPE, a technique of inserting in D ₂ gas is increasing its findings it has been developed, with the basic device configuration basically FPE Therefore, the problem of reproducibility has not been solved.

Improvements are also progressing in FPE cold fusion furnaces. For example, according to Non-Patent Document 4, plasma is formed on the electrode surface by electrolyzing a metal cathode electrode in a liquid at a high voltage, and plasma is formed in the liquid. It is stated that plasma electrolysis observed excess heat and products that would not normally occur, proposing the hypothesis that this was the result of a "unique reaction" occurring on the cathode surface. However, although this cold fusion reactor is based on FPE, it has actually been significantly improved. Details will be described later.

U.S. Pat. No. 9,182,365B2 Japanese Unexamined Patent Publication No. 2008-261868 International Publication No. 2015/008859

From the principle of cold fusion described later (A1. Explanation of the principle of cold fusion), the most important point for cold fusion is to control the surface potential of the metal. Cold fusion devices using FPE clearly lack recognition of the importance of controlling the potential of this metal surface. Regarding this point, for example, the nanostructure disclosed in the above patent document may be a nano-sized metal powder or a metal particle that happens to be generated under process conditions, and practically, the surface potential of the metal Is not supposed to be controlled with high accuracy, and it becomes an unstable factor in the reproducibility and performance improvement of cold fusion.

Further, in Patent Document 3, the surface of the reactant is formed in a mesh shape with fine lines, and a plurality of nano-sized metal nanoparticles (not shown) having a width of 1000 [nm] or less are formed on the surface of the fine lines. Has been done. That is, since the nanostructure is formed on the surface of the thin wire, the only way to extract the excess heat is from the thin wire having low thermal conductivity or by extracting hydrogen from the atmosphere and exchanging heat. Therefore, the heat exchange efficiency becomes extremely low. Further, Patent Document 3 explains that by heating the reactant, "hydrogen atoms are occluded in the metal nanoparticles, and (...) the probability that a tunnel fusion reaction occurs is increased", but the hydrogen storage metal It is considered that cold fusion cannot be reproduced with good controllability by heating.

Although details will be described later, according to the idea of the present inventor, in a normal cold fusion mechanism, a cation (Nucleon of D) D ^{+ at} the T site of a hydrogen storage metal overcomes a potential barrier by hopping when the temperature rises. Te deuterium ions D ^- move to the adjacent T site is on, where considered fusion is triggered. However, in this case, when the temperature of the metal rises due to the occurrence of nuclear fusion, D ⁺ becomes more likely to be hopping, positive feedback is generated, and thermal runaway occurs in which the metal temperature cannot be controlled. The requirement for this high temperature is a serious issue for FPE.

It is also known that if the metal temperature is high, the metal lattice will be damaged, and the metal surface will be extremely rough due to local excessive heat generation. Furthermore, when cold fusion is used for power generation, the heat of the heating element is usually cooled and converted into electric power, so the metal temperature should be kept low not only to avoid the above thermal runaway but also for power generation. is required. That is, it is desirable to use a method that triggers fusion (at as low a temperature as possible) without raising the metal temperature, or a method that can maintain the self-sustaining mode of fusion at a low temperature.

_{In the D 2} O system described in

Non-Patent Documents

4 and 5, the specific heat of _{D 2} _{O is higher than that of D 2} gas and the metal surface can be directly cooled, so that the fusion reaction can be continued and the generated heat can be efficiently performed. advantageously much than D ₂ gas system in terms of extraction.

In addition, Non-Patent Document 4 points out that it is important to increase the supply amount of D as a method of increasing the calorific value, but in a cold fusion reactor based on FPE, it was once accumulated in the metal. Since D is supplied to the metal surface by diffusion, there is a problem that the amount of D supplied cannot be controlled and therefore cannot be maximized (details will be described later).

Hereinafter, the mechanism of cold fusion generation proposed by the present inventor will be described with reference to FIG. 1, and the reason why the above background technology cannot stably reproduce cold fusion will be described in detail. Needless to say, the schematic diagrams such as FIG. 1 are diagrams for explaining the generation mechanism of cold fusion, and the ratio of the size of atoms and molecules in the drawing directly reflects the actual ratio. is not it.

A1. Principle of Cold Fusion The inventor considers cold fusion to occur in the following process. Since the process of cold fusion is considered, we will start from the state where D is occluded at a high concentration that causes fusion in the metal. The T sites, hydrogen molecules, and femto hydrogen molecules in the metal lattice shown in FIG. 1 will be described later.
1) D ⁺ and D ^- space (T site) to the anion D of the expanded lattice of approaching metal surfaces ^- enters, deuterium molecules D bound to nucleons) D ⁺ cations (D in the vicinity thereof ₂ is formed (see FIGS. 1 (A) and 1 (B)).
2) _{Formation of femto D 2} _{molecule D 2} is compressed by the stress that the metal lattice of the expanded T-site returns to its original size, and the _{deuterium molecule D 2} becomes the femto deuterium molecule when the nucleons approach each other. Transition to (femto D ₂ molecule) (see FIGS. 1C and 1D).
3) femto D telescopic movement femto D ₂ molecules of ₂ molecules spatially stable stretching vibration in within the T site reference (FIG. 1 (E)). As will be described later, since the diameter of the inscribed sphere at the T site is 1 Å and the femto hydrogen molecule is about 6 fm (femto meter) in size, the femto D ₂ molecule vibrates almost freely in the T site. The stretching motion is likely to result in a very narrow internuclear distance.
4) Fusion Fusion When _{the closest contact distance between nucleons becomes sufficiently narrow due to the vibrational motion of two} femto D molecules, fusion occurs, and fusion produces helium He in the T site (Fig. 1 (E) and). (F)).
5) At the T site where the supply He of D is generated, D ⁰ occluded in the metal is tunneled from the O site, and at that time, D ⁰ moves to the T site as D ^{+, which will be described in detail later (.} FIG. 1 (G).
When 6) D ⁺ T-sites are of expelling He helium entering, as described later, the anion D receives electrons from electronegativity of metal ^- becomes, D ^- since the considerably large size, The T-site where He is present is expanded, and He is expelled from the T-site (Fig. 1 (H)). In this way, the surface T-site returns to the state shown in FIG. 1 (A), and nuclear fusion continuously occurs while D is supplied.

A2. Mechanism of Cold Fusion The mechanism of cold fusion will be described in detail with reference to the findings so far (References 1 to 16). References 1 to 17 are listed at the end of this section "Problems to be Solved by the Invention".

A2.1) Behavior of hydrogen atoms in metal According to Reference 1, the hydrogen atoms absorbed in the palladium solid occupy the interstitial sites in the metal lattice without disturbing the arrangement of the metal lattice. For example, the face-centered cubic lattice (fcc) shown in FIG. 2 has a regular tetrahedral gap site (hereinafter referred to as T site) and a regular octahedral gap site (hereinafter referred to as O site), and a hydrogen atom is in a stable state. Then, it occupies a wider O site, and it is considered that hydrogen ions are introduced into the T site through it. That is, first, hydrogen ions enter the O-site, which is a wider site, and expand the surrounding atoms to expand the entire crystal lattice. Therefore, the surrounding potential changes, and the positions of the palladium and hydrogen ions and the positions of the hydrogen ions are determined so that the energy of the system becomes stable. This allows hydrogen ions at the O site to enter the T site. Hydrogen atoms that have entered the palladium lattice form a solid solution without regular arrangement. _{In addition, there is also a path in which D 2} is dissociated at the metal surface at the outermost T site and is directly introduced into the T site on the surface.

As shown in FIG. 3, according to Reference 2, the number of sites per metal atom is one O-site and two T-sites in fcc and close-packed hexagonal lattice (hcp). In the body-centered cubic lattice (bcc), there are 3 O-sites and 6 T-sites. It has been found that the ordered structure of hydrides generally follows the rule of thumb that the hydrogen-hydrogen atom distance does not fall below 0.2 nm, and usually only some of these sites are occupied.

According to Reference 17, most cold fusion is observed in hydrogenated and deuterated transition metals in the fcc and hcp lattice structures, where fcc and hcp are close-packed structures. Further, as shown in FIGS. 4 and 5, according to Reference Document 3, it is known that D is preferentially occluded at the T site on the metal surface. From these facts, it can be estimated that cold fusion occurs at the T site on the metal surface.

Hereinafter, the arrangement of T sites in the metal lattice will be schematically shown as shown in FIG. 6 in order to simplify the drawing, taking the fine packing structure of fcc as an example. That is, the lattice forming the T site in the metal lattice is indicated by a triangle.

FIG. 7 schematically shows the arrangement of T sites on the metal surface. As will be described later, deuterium (Duterium: D), which occupies the T site on the metal surface, is the main component of the present invention.

According to Reference Document 5, regarding the electronic state of hydrogen existing in a metal, ^{a proton model in which a hydrogen atom completely releases an electron and becomes an H +} state, and conversely, an extra electron is taken in to an H ^- state. Both of the anion model of becoming are conventionally considered, and changes in electric resistance, magnetism coefficient, electron specific heat, etc. due to hydrogen absorption have been explained by the model that is more convenient according to the situation. However, recent theoretical calculations of the electronic structure of metal hydrides, founded by Switendick, have shown that both of the above two models capture only one aspect of the facts. That is, hydrogen in a metal ^{exists in the form of H X} (x can take a value between -1 and +1), and is considered to have the duality of being H ⁻ ^{or H +.} Therefore, the present inventor considers that H ⁻ and H ⁺ can exist in the metal at the same time. If this hypothesis does not hold, cold fusion will not hold, and it can be said that it is a valid hypothesis considering the research results of hydrogen in hydrogen storage metals.

As shown in FIG. 8, if the radius of the hydrogen atom H ⁰ and 1 × 10 ^{-10 m =} 1Å, negatively charged hydride H ^- radii, electrons fill the high energy level above E _F because there becomes 2 × ¹⁰ -10 m = 2Å about twice. Needless to say, FIG. 8 is depicted schematically, in fact, since hydrogen nuclei ^{H +} charge radius R is 0.87 × ¹⁰ -15 m = 0.87fm, the radius on the electron ^{H 0} Is located nearly 90,000 times away from the radius R of the hydrogen nucleus H ^+. Incidentally, the internucleus distance r ₁ of the hydrogen molecule H ₂ is 0.74 Å. Therefore, considering the radius of 1 Å of the hydrogen atom H ⁰ _{, the size of the hydrogen molecule H 2} is ~ 2.74 Å, and _{the size of D 2} is also ~ 2.74 Å.

Since the inscribed sphere is 1 Å in size of the T site, a single D can be stored in the T site. If goes here D ₂ molecules, nucleons interval is the same size as the D is but should be zero actually not as its due Coulomb repulsion between nucleons is very large. Reference 8 shows that a normal hydrogen atom has a very high Coulomb repulsive force between nucleons, and it is difficult to bring the nucleons close to the fm order.

Specifically, it is necessary to make the internuclear distance shorter than the fusion distance (0.1 to 1 pm (pico meter)) in order to enable fusion. The Coulomb repulsive force at this time is, for example, 1. It is estimated to be ^{1 × 10-6} N at a fusion distance of 5 pm. However, the elastic induced stress in Pd is estimated to be at least two orders of magnitude smaller than that based on the elastic constant of Pd. Here, the elastic induced stress is a stress generated in the metal and corresponds to a residual stress or a yield stress. For example, if the typical internal stress in a metal is on the order of 10 GPa, the pressure applied to the hydrogen atom is 1 GPa = 10 ⁹ N / m ² = 1 × ^10-9 N / nm ² = 1 × ^10-11 N. It can be estimated to be / Å ^2. ^{Therefore, the force of 1 × 10 -6} N required to cause fusion is two orders of magnitude higher than the internal stress of the metal, 1 × 10 ^-8 N / nm ² or 1 × 10 ^-10 N / Å ^2. The value is up to 4 orders of magnitude larger.

A2.2) Deep electron orbit of hydrogen atom As described above, in the stress from a normal metal lattice, the Coulomb repulsive force between nucleons exceeds the stress, so fusion does not occur. However, in order for fusion to occur, it must be considered that this internucleon coulomb repulsive force is smaller than expected for some reason, and there must be a reason. Therefore, it was considered that there was some problem in the accuracy of the electron orbital calculation of the hydrogen atom and the accuracy of the Coulomb repulsion calculation.

In particular, considering the calculation of the Coulomb force when the internuclear distance is on the order of fm, the Coulomb force diverges at r = 0, so the accuracy near r = 0 should be low. As a result of a literature search on this, it is theoretically predicted that a hydrogen atom has a deep electron orbit, and its proof is a problem in conventional physics, and the deep orbit is at room temperature. We have found prior literature that is believed to be the cause of nuclear fusion (

references

10, 11, 12, etc.).

The shielding of the Coulomb repulsive force between nucleons can be solved by considering that the electron orbit of the hydrogen atom has a deeper orbit. From the viewpoint of internucleon Coulomb repulsion shielding, in a normal hydrogen molecule, the covalent bond portion of its orbital electron may shield the nucleon Coulomb repulsion. However, if the nucleon distance at the time of covalent bond is 0.74 Å = 7.4 x 10 ^-11 m = 74000 fm and the orbit extends to a range of about 1 Å, this nucleon distance is about several tens of fm. Then, the spread of the orbit extends to the part other than between the nucleons. For this reason, when the distance between nucleons becomes narrow, electrons do not exist between nucleons, and the shielding effect of the covalently bonded electrons becomes at most a fraction of the shielding effect, and the shielding effect until nuclear fusion cannot be expected. ..

On the other hand, if the deep electron orbit of the hydrogen atom is taken into consideration, it can be considered that the femto hydrogen molecule is composed of the femto atom having an electron in the deep orbit. That is, referring to the sizes of the hydrogen molecule and the femto hydrogen molecule shown in FIG. 8, it can be understood that the spread of the electron cloud is also in the range of about several fm, so that the internuclear Coulomb repulsive force is almost completely shielded. The contents of the literature on deep electron orbits will be described below.

The existence of deep electron orbits around the nucleus of hydrogen (H or D) is theoretically known (references 6 and 7), and its radius r ₀ is several fm (for example, about 1.4 fm). Is calculated. This deep electron orbit is abbreviated as DDL (Deep Dirac Level) and DEO (Deep Electron Orbit), but is referred to as DEO in the present specification. As will be described later, the present inventor considers that the electrons that have transitioned to DEO are essential for understanding cold fusion, and therefore, the deep electron orbital DEO will be described below with reference to FIGS. 9 and 10.

As mentioned above, the existence of deep orbitals was theoretically predicted in the electron orbits of hydrogen atoms, but the existence of deep orbitals was affirmed because the orbitals were not demonstrated from the electron transition spectrum of hydrogen atoms. I wasn't. However, considering that cold fusion is occurring, cold fusion cannot be explained without the existence of this deep electron orbit.

With reference to FIG. 9, in the conventional quantum mechanical theory, the Schrodinger equation is calculated using a model in which the Coulomb potential is inversely proportional to the internucleon distance r, and has a singular point at r = 0 (curve in FIG. 9). 5a ・ 5b). Under the theoretical premise that cold fusion requires internuclear Coulomb repulsion shielding, it is calculated that nucleons need to be brought close to each other up to about 15 fm.

The DEO theory has been repeating the process of floating and disappearing within the Physical Society of Japan for a long time, but in recent years, it has begun to show new development by adopting a new model with r = 0 and no singularity. (Reference 13). In this model, the Coulomb potential is calculated as having a constant charge inside the proton and proportional to 1 / r outside the proton (curves 5a and 5c in FIG. 9). The deep electron orbit DEO described above is calculated by numerically calculating the relativistic Schrodinger equation using this model. Specifically, the relativistic Schrodinger level of the hydrogen atom is calculated in TABLE I.A (page 310) of Reference 12. As shown in FIG. 10, the existence of deep electron orbitals DEO1 to DEO3 is clearly shown as a calculation result in TABLE I.A. of Reference Document 12.

The DEO theory is not widely accepted because its orbital has not been found in the electron orbit transition spectrum of hydrogen. However, it is considered that it is the DEO theory that rationally explains the experimental results of References 15 and 16 as described below.

References 15, hydrogen ions H negatively charged ^- observed that (hydride) is report that tends to be compressed, and the pressure exerted on the layered material in reference 16 is lowered to 49GPa from 52GPa Has been done. This indicates that the pressure caused a rapid volume change, that is, the phase changed to a high density state. Since this point is related to the principle of cold fusion, it will be considered below.

In the experiment of Reference Document 16, compressive stress is applied from the vertical direction of the layered substance to measure the physical property constants. The measurement states that the pressure has decreased from 52 GPa to 49 GPa, which is interpreted as a phase change that changed the layer into a denser layer. According to the example shown in Reference 16, H is bound to V in the perovskite-type crystal structure of strontium (Sr), vanadium (V), and hydride SrVO _{2 H shown in FIG. 11A.} It can be considered that the HV coupling interval was reduced by the compressive stress and changed to a dense layer as shown in FIGS. 11B and 11C. See page 16 of Reference 16 FIG. With reference to FIGS. 11D and 11E taken from 2b and c, it is shown that the pressure decreased from 52 GPa to 49 GPa as indicated by the dashed arrow, and the phase changed to a denser phase. This reduction in H-V binding interval H sandwiched between VO ₂ layers ^- caused by shrinking, H ^- reduction is reasonable to interpret to be the result of electron S orbit H transitions to DEO track Is. That is, when the HV interval is reduced, the deep electron orbitals of H and the electron orbitals bonded to V approach each other, and the electrons in the ground state transition to the deep orbitals, so that the size of hydrogen is reduced.

It is considered that the same size reduction will occur in the case of deuterium gas. Electronic transitions to DEO trajectory in D ₂ molecules can be described as follows. That is, if D ₂ molecules are compressed by the compression stress, the electron density is increased becomes narrower covalent binding moiety. That is, the covalently bonded electron orbital approaches the position of the wave function of the deep electron orbital of hydrogen, which increases the probability that the electron will transition between the S orbital and the DEO orbital by tunneling.

More specifically, FIG. 12A schematically shows the changes in the wave function of the S orbit and the wave function of the DEO orbit during the compression process. That is, when D ₂ molecules are compressed by the compression stress from the metal T site, D2 spacing is narrowed first, whereby the electron density between the d-d is increased. Fig. 7 of Reference Document 7 shown in FIG. 12 (B). According to the graph of No. 3, the density of the DEO orbit between d and d becomes high near the nucleus, and the wave function sharply decreases when the distance is several fm near the nucleus. Therefore, as shown in FIG. 12 (A), when the distance between d and d is the minimum distance that can be approached by the stress from the metal lattice against this normal Coulomb repulsive force, the wave function of the S orbital and the wave function of the DEO orbital. It can be interpreted that the overlap C with the function becomes wider and the probability that the electron in the S orbital tunnels to the DEO orbital and transitions increases.

A2.3) Interpretation Figure 13 "nanostructure" and analysis of hydrogen storage sites of the nano metal particles of two respectively adjacent T site D in the metal grid ^- a state in which the D ⁺ and enters schematically shown ing. A model in which deuterium occluded in palladium nanoparticles occupies O-sites and T-sites is described in Reference 3. Reference 3 points out the importance of nanosizing and surface effects of metal hydrides, and in the section “4. Deuterium atom positions in Pd nanoparticles” on page 97, the core region (internal region) of the nanoparticles. It is concluded that the model in which the D atom is occupied only in the O site in) and in both the O site and the T site in the shell region (outer skin region) is the most reliable. Also, according to this model, about one-third of the occluded deuterium occupies the T site. _{Furthermore, the atomic displacement parameter BD (T) of} the D atom (T site) shows an abnormally large value (14.1 Å ² ) only slightly from the T site (1/4, 1/4, 1/4). It is presumed that there are some stable sites at the positions shifted to, and the D atom is displaced between these sites. It is considered that these correspond to the fact that the surface T-site is easily stress-relaxed and its position is displaced.

As already mentioned, the importance of face-centered T-site in cold fusion is also shown in Reference 17, that fcc and hcp have a finely packed structure, and deuterium is present in the surface T-site. It is presumed that fusion occurs in the surface T-site from the preferential occlusion (Reference 3).

According to Reference Document 2, when one hydrogen atom enters the metal lattice, a repulsive force potential acts between the adjacent hydrogen atom and the metal atom, and the energy of the whole system becomes high. On the other hand, the energy of the whole system is minimized by balancing the decrease in ground energy due to the displacement (expansion of the lattice) in which the metal atom is pushed away from the hydrogen atom and the increase in the lattice strain energy that is almost proportional to the square of the displacement of the atom. The displacement of the atom to be used is determined. As a result, the metal atoms around the hydrogen atom expand due to the solid solution of hydrogen. The magnitude of the expanding volume differs depending on the type of metal and interstitial position, but it is known that ^{transition metals are almost constant and fall within the range of 0.0026 ± 0.0005 nm 3.}

^{Considering the size of D − and} the size of T site described above ^{, it is difficult for D −} to enter the T site, but in reality, since there are no metal atoms on the upper side of the metal surface, stress relaxation is performed even if ^{D − enters the T site.} Is possible, which causes the grid to expand and widen the voids. In other words, since the increase in the energy of the system due to the expansion of the lattice is small, the expansion width becomes large, and D ⁻ is more likely to enter the T site on the surface than the bulk. This is the reason why cold fusion is a surface reaction.

As shown schematically in Figure 14, assuming the metal surface S _M, T sites on its surface is capable of stress relaxation, as described above, in particular the displacement width of the two metal atoms of the surface T site is large It is considered to be. The size of the inscribed sphere T site is the diameter 1.123Å, expanded by the displacement of the two metal atoms of the surface T site, D the diameter of 2 Å ^- it is possible to enter.

However, D ^- unlikely enters ^- is entered T-sites with similar D to T sites adjacent. This ^{is because when D −} is entered and one of the lattices expands, the adjacent T site becomes narrower. Therefore, as shown in FIG. 13, if a large D ⁻ ^{enters one of the adjacent T sites, a small D +} should easily enter the other. D to the adjacent T sites ⁺ and D ^- that enters the structure which is the source of the flocculation system clusters in nano-structure is formed. According to Patent Document 3 and the common understanding of academic societies, cold fusion is a surface reaction, and when fusion occurs, irregularities are often observed on the electrodes in SEM (scanning microscope) observation. It is recognized that fusion occurs in "nanostructures" such as these irregularities. That is, the positive and negative (D ⁺ and D ^-) be present in both the T site ions adjacent, which is the basic "nano structure" to generate a cold fusion. ^{It cannot be denied that D + on} the O site moves, but the above explanation is highly possible.

Note that the nanostructures created in the film-forming process with irregularities, etc. are marked with parentheses, that is, "nanostructures", and the nanostructures created in the controlled process are marked without parentheses to distinguish them.

Since the entering both attract each other by Coulomb force, for example beyond the potential by thermal excitation small D ⁺ large D ^- ^- A2.4) to free electrons affect neighboring T sites in the metal D ⁺ and D move to the side If this is done, the probability of nuclear fusion will increase. However, in practice this is not always the case. The reason is that the presence of free electrons in the metal acts to shield the Coulomb force. Hereinafter, the influence of free electrons in the metal will be described with reference to FIG.

According to Reference 4, the change in energy with respect to the distance between H and H when hydrogen is put into the metal is shown in the graph of FIG. 15 using a jellium model that approximates the metal like a sea of free electrons. Has been done. That is, the electron density is small (r _s is large) although the two H the Na is bound state, the electron density is large (r _s is small) two in Al of H is turned all the atomic repel a distance ing. This is because the metal conduction electrons enters the antibonding orbital of the H ₂ molecule, because cutting the binding. It is also stated that in metals, the charge of protons is shielded by only 0.6 Å. The reason for this is simple: the number of free electrons is calculated to be zero in that narrow space.

Thus, the presence of free electrons in the metal in order to act to shield the Coulomb force, D ⁺ and D to T sites adjacent even as shown in FIG. 13 ^- even and enters respectively, D ^{Since it is difficult for +} to move to the D ^- side, the probability of nuclear fusion decreases.

Based on the above findings, the present inventor concluded that it is necessary to reduce at least the free electrons on the metal surface in order to cause cold fusion in the nanostructure on the metal surface. Further, the free electrons on the metal surface become a resistance force of the vibration motion between DD, which will be described later, and therefore have an effect of decelerating the speed, which may cause a decrease in the fusion probability. From this point of view, it was concluded that it is necessary to reduce the free electrons on the metal surface.

A2.5) on the surface of the hydrogen-absorbing metal as shown in the movement 16 of the hydrogen ions D ⁺ and D by hopping ^- if a neighboring T site is generated that contains each free electrons in the metal, as described above the presence of the D ⁺ and D ^- acts to shield the Coulomb force between the. FIG. 17 (A) schematically shows a state in which ^{D +} is ^{difficult to move to the D −} side due to the shielding of this Coulomb force. As shown in FIG. 17 (A), in the state where ^{D +} ^{is difficult to move to the D −} side, in other words, ^{the potential barrier between D +} and D ⁻ is high, and D ⁺ has higher energy than the potential barrier. Otherwise, it means that the probability of moving to the ^{D-side is low.}

In contrast, as shown in FIG. 17 (B), decreasing the free electrons of the metal surface, D ⁺ and D ^- shielding Coulomb attraction between weakens, equivalently potential barrier becomes lower even Te a low energy D ⁺ D ^- probability of moving to the side increases. ^{Therefore, when D +} is thermally excited by heating while the number of free electrons is reduced, ^{the probability that D +} will move to the adjacent T site where ^{D − exists by hopping increases.} When a is confined, D ⁺ and D ^- ^- D ⁺ and D in the T site and are combined to form a D ₂ gaseous aggregation system cluster.

Thus, it is an important parameter for cold fusion that ^{D +} moves to the adjacent T site where D ^{− exists by hopping.} That ^{is, the Coulomb attraction between D +} and D ⁻ increases by lowering the potential barrier, which increases the hopping probability. That is, in order to efficiently generate cold fusion, it is important to increase this Coulomb attraction. However, in the conventional cold nuclear fusion reactor, may free electron density is induced electrons on the metal surface becomes high at the metal surface, the free presence of electrons D ⁺ and D ^- shielding the Coulomb attraction between the Therefore, there is a problem that the cold fusion probability becomes low.

A2.6) As schematically shown in formation 16 of D ₂ molecules by covalent bond, D ⁺ is D ^- when hopping to the adjacent T sites, to form a covalent bond close within the T site. Process D ₂ molecules are formed by covalent bond is considered as follows.

In Figure 18, D ^- to the D ⁺ is sufficiently close, D ⁺ is D ^- ready to share electrons S orbit, D ^- a covalent sharing the electron cloud 1 between D ⁺ It becomes a structure. D ⁺ of the positive charges and D ^- Given the negative charge should take inherently covalent states. That, D ^- and the D ₂ molecule is formed by covalent bonds between the D ^+, the binding attraction becomes 2, D ^- the electron cloud 1 that is shared between the D ^+, both relative nuclei, and exhibit the effect of Coulomb blockade against the Coulomb repulsion between the hydrogen nuclei, D ^- orbit covalent up nuclei D ⁺ nuclei side is very close to the short distance is maintained.

_{However, as can be seen from the size of the hydrogen molecule (H 2} ) shown in FIG. 8, when the nucleon spacing is close to several tens of fm, the electrons between the nucleons disappear as described above, and the internuclear Coulomb repulsive force cannot be sufficiently shielded. .. The present inventors, the presence of the femto D ₂ molecules to complete shielding nucleons between Coulomb repulsion is considered essential. Femto D ₂ molecule is thought to be generated in the same principle as compressed susceptible proton are discussed in references 15 and 16. Hereinafter, the theoretical consideration by the present inventor will be described in detail.

A2.7) femto D ₂ forming molecules prior art, as shown in

curves

5a and 5b of FIG. 9 described above, the electrostatic repulsion has been considered rapidly increases as the nucleus distance decreases. For example, in order for two nuclei to fuse, the two nuclei must be brought close to each other against the Coulomb force to a distance of about 10 fm, which increases the possibility of fusion by tunneling. Energy required therefor is about 0.1MeV (10 5 ^eV) (for A2.1 Section described above the final force required for nuclear fusion which is described in the paragraph "behavior in a metal hydrogen atom" See an example). For this reason, the present inventor initially considered that all interactions between protons are the principle of cold fusion in the direction of coulomb shielding with n = 1 orbitals. As described above, since the

curves

5a and 5b treat the protons as point charges, they diverge at the internucleon distance r = 0, but the divergence is caused by treating the inside of the nucleons as a uniformly charged sphere. It can be avoided. The result is the curve 5c in FIG.

_{However, as can be seen from the size of the hydrogen molecule (H 2} ) shown in FIG. 8, since the electron orbit of n = 1 is as large as about Å, the nucleons cannot be brought close to each other to about 15 fm. Therefore, in order to shield the Coulomb repulsive force between nucleons more efficiently, the electron distribution needs to be smaller, about fm. As a result of investigating the results of past studies on this point, it was found that the theory that an atom may have a deeper orbit is being discussed (

References

10, 11, 12). This deeper orbit (DEO) theoretically indicates the existence of femto atoms and femto molecules, and their researchers also claim that femto atoms are the cause of cold fusion.

The present inventor considers the process until cold fusion occurs in _{D 2} confined in the T site in the metal lattice as follows.
a) T at site D ^- When the D ⁺ and become covalent state (D ₂ molecules), the nature of the covalent bond, attraction 2 as between nucleons attract occurs, the compressive stress from the metal grid Receive and shrink. This reduction is described as easy to hydrogen ions is compressed with references 15 and 16 as described above, the femto D ₂ molecules with DEO orbit in T sites by mechanisms described in the following 19 to 22 It is thought to be formed. Further theoretical considerations DEO, becomes within a distance number 10 fM, electron transitions from the track of the n = 1 to DEO orbit (n = 0), _{D 2} molecules transitions to femto _{D 2} molecule.
b) The distance between d and d changes from the shortest to the longest due to the expansion and contraction vibration of _two femto D molecules trapped in the T site. As a result, tunneling occurs at the shortest distance between d and d, which increases the probability that nuclear fusion will occur.

Hereinafter, or will be described in detail D ₂ molecules trapped within T sites of the metal grid receives what forces lead to fusion.

<Compressive stress from metal lattice>
First, it is assumed that the metal lattice of the T site has a three-dimensional structure surrounded by four metal atoms, in which a covalent bond D ₂ ^{of D −} and D ⁺ is formed. As schematically shown in FIG. 14, it is considered that _{D 2} is subjected to a restoring force proportional to the square of the displacement such that the metal atom shrinks the regular tetrahedron toward the center of the tetrahedron.

As shown in FIG. 19, the T-site metal lattice and the force received from the T-site metal lattice in the compression direction are schematically represented. _{That is, D 2} is confined in the T site 15 surrounded by four metal atoms 11 to 14, and the metal atom 14 shown by the broken line is located in front of the paper surface in the vertical direction. In FIG. 19 (A), _{it is shown that pressure F is applied to D 2} from three

metal atoms

11, 12 and 13 in three directions.

As shown in FIG. 19 (A), by receiving the pressure F from different directions T sites between nucleons of D ₂ is also physically compressed repelled by Coulomb repulsion. As already mentioned, when one hydrogen atom enters the metal lattice, the repulsive potential acts between the adjacent hydrogen atom and the metal atom, so that the energy of the whole system becomes high. The balance between the decrease in basal energy due to the expansion of the lattice and the increase in lattice strain energy, which is approximately proportional to the square of the displacement of the atom, determines the displacement of the atom that minimizes the energy of the entire system. In other words, it is possible to know how close the nucleon distance is by calculating the internucleon potential in this simulation.

As shown in FIG. 19 (B), the internuclear distance _{of D 2} is reduced by receiving the pressure F from different directions of the T site. More specifically, the metal atoms 11 to 14 are three-dimensionally reduced in the direction approaching _{D 2.} Three

metal atoms

11, 12 and 13 of the lower shrinking toward D ₂ respectively, D ₂ is a state in which rides thereon moves toward the metal atom 14 is also D ₂ at the upper side of D2 Therefore, D ₂ is hindered from moving upward. As a result, _{the nucleon spacing dd of D 2} is reduced within the T site.

According to Reference Document 8, it is theoretically required that the dd interval is close to about 15 fm, but it is not possible to make the dd interval close to this degree due to the stress in the metal. Has been done. Because the value of the nucleons between repulsion is 1x10 -6 ^N at approximate, elastic constant of Pd atoms is because two orders of magnitude smaller than this value (for A2.1 Section described above of "hydrogen atom See an example of the force required for fusion described in the last paragraph of "Behavior in Metals").

However, the expanded T site D ₂ molecules confined in the stable when minimizing the potential of the entire system with the potential increase due to the compression of the compressive stress and the D ₂ molecule. Of course at that position is not inaccessible enough dd distance causes fusion, electron cloud between dd is approaching the distance to the extent that the femto D ₂ molecule described in FIG. 11A ~ 11E and 12 are formed I think I'm doing it. Since the Coulomb repulsive force is almost completely shielded by this, it is considered that the distance between dds approaches about 15 fm within the range of the vibrational motion of _{the normal femto D 2 molecule to the extent that nuclear fusion occurs.}

A2.8) Shielding of Coulomb repulsive force by DEO electrons Hereinafter, shielding of Coulomb repulsive force by DEO electrons will be described with reference to FIGS. 20 to 22.

According to

References

10, 11 and 12, it is pointed out that the deep electron orbit of a hydrogen atom (D or H) is important for understanding cold fusion. Further, as described above, the existence of a deep electron orbit DEO (DDL) is clearly shown as a calculation result in TABLE I.A (page 310) of Reference Document 12 in FIG.

Normally, there are no electrons in the deep electron orbit, but according to Reference 7, it is shown that when an electron enters the DEO, it stays stable. FIG. 20 shows Fig. 20 on page 11 of Reference 7. It is the same graph as 4. In FIG. 20, the horizontal axis is the distance (that is, radius) ρ from the center of the proton (radius R = 0.87fm), and the vertical axis is energy. As shown in FIG. 20, the potential energy is larger than the kinetic energy in the zone of ρ> 26.5 pm and the zone of 1 fm <ρ <2.8 fm. Since the DEO is in the zone of 1 fm <ρ <2.8 fm, it can be seen that the electrons entering the DEO remain stable. That is, when an electron transitions to DEO, as described in FIG. 8, a proton having a radius of about 0.87 fm is covered with a DEO electron having a radius of about 1.4 fm, and the structure of one atom (hereinafter referred to as a femto atom). It becomes. According to Reference 6, the DEO electron is moving at a speed close to the speed of light, and the proton is covered with the DEO electron so that the whole can be treated as one "neutron". It has been pointed out that the repulsive force can be shielded very efficiently. This Coulomb shielding can be explained as follows.

According to reference 9, D ₂ molecules trapped in the cavity are considered to be vibrated by the vibration of the metal grid, the vibration in the cavity is modeled as shown in Figure 21. In the narrow cavity, only the expansion and contraction vibration component indicated by the arrow in FIG. 21 is generated, and the dd interval may become narrower than a constant value when contracted. Since the weight of the metal atom forming the cavity is larger than that of D, it takes a long time for the vibration energy to dissipate to the metal lattice. Therefore, the oscillating motion continues in the narrow cavity, which increases the number of times the dd interval becomes smaller.

As shown schematically in FIG. 21, vibrates D ₂ molecules trapped within T sites, each nucleon is assumed to approach. According to Reference 6, when the nucleons approach, as schematically shown in FIG. 22, the electrons that have transitioned to the DEO are redistributed so as to minimize the energy of the entire system. That is, when the density of each DEO electron increases on the opposite side of the two protons and the distance becomes smaller than 2.8 fm as derived in Reference 7, a covalent bond state of the femto atom is formed. it is conceivable that. When the femto D ₂ molecule is formed in this way, the shielding effect of the Coulomb repulsive force between nucleons becomes remarkable by the mechanism described in FIG. In this way, the Coulomb repulsive force is completely shielded by the DEO electrons.

A2.9) stretching vibration femto _{D 2} molecules of femto _{D 2} molecules, as shown in FIG. 8, the width becomes smaller to the extent 6fm ^{(6x10 -15} m). Since the size of the T sites degree 1Å ^{(10 -10} m), the femto _{D 2} molecules much smaller compared to the T site. Thus, after the transition to the femto D ₂ molecules closest distance between d-d according to the energy of the oscillating movement of the femto D ₂ molecules is increased it is reduced, that the closest state is repeated a plurality of times by stretching vibration It becomes. Since the Coulomb repulsive force is completely shielded by the DEO electrons, as shown in the curve 5d of FIG. 9, by applying much smaller energy than the conventional explanation, the nucleons can be brought close to each other so as to tunnel. As a result, the probability of fusion occurrence is greatly improved.

A3. Process of Cold Fusion Generation To summarize the above, the theoretical consideration of DEO mentioned above is about free femto hydrogen molecules, but as will be described later ^{, D +} actually enters the T-site extended with ^D- ion, and there. It forms hydrogen molecules and vibrates. The T-site has a stress that shrinks to its original size (inscribed diameter to 1 Å), and hydrogen molecules are shrunk in the range where the shrinking stress is higher than the repulsive force between hydrogen molecules. Thus, _{D 2} molecules in the T site transitions to femto _{D 2} molecule.

Femto D ₂ molecule smaller than the original size of the T site (~ 1 Å), the stable oscillating motion in the T site. When this vibrational motion is large, the nucleons are tunneled closer to each other and fusion occurs. Therefore, it is important that the femtocluster molecule has a high kinetic energy.

A3.1) The presence of free electrons, however, in order to free electrons are present in the metal as described above, can not be maintained sufficiently high vibration energy of the femto D ₂ molecules in T site. The heating method described in Patent Document 3 has a limitation in maintaining a sufficiently high vibration energy, and also has a drawback that sufficient controllability cannot be obtained due to a wide energy distribution.

A3.2) Supply of hydrogen In addition, in order to generate cold fusion continuously and stably, the concentration of hydrogen molecules and hydrogen ions (including light hydrogen H and deuterium D) should be kept above a certain value. There is a need. That is, since the calorific value depends on the inflow amount of D absorbed by the metal and the amount of fusion of the D, it is necessary to supply the consumed amount of D. However, in a conventional gas-based device, hydrogen molecules and hydrogen ions diffuse outward because the substrate temperature is as high as several hundred degrees. Therefore, in the conventional example, hydrogen in a gas state is supplied to the vacuum chamber in order to maintain the hydrogen concentration in the hydrogen storage metal above a certain value, and there is a problem that the concentration distribution and temperature distribution on the substrate surface cannot be corrected. rice field.

Also in D _{2 O} system of the apparatus, a device that does not consider the supply of D as in Non-Patent Document 4 can not continuous operation of the stable fusion reactions. _{For example, it is necessary to efficiently flow D 2} O over the surface nanostructure of a hydrogen storage metal and efficiently store hydrogen, but this has not been considered at all in the prior art. In addition, the structural strength of the hydrogen storage metal also becomes a problem in order to allow the liquid to flow. Furthermore, it is necessary to devise ways to reduce the size of cold fusion reactors.

A3.3) Misunderstanding of cold fusion generation mechanism based on FPE Fig. 23 shows a part of the cold fusion experimental reactor described in Fig. 1 of Reference 18. The experimental furnace shown in FIG. 23 is based on the current FPE (Fisherman and Pons effect). According to this, a sheet-shaped Pd cathode is arranged in the center in the cold fusion reactor, and has a configuration in which the anode of the platinum Pt wire is wound around it so as to be plane-symmetric, and the voltage between the cathode and the anode is high. Is applied to electrolyze _{D 2 O.} The According to reference 18 in D _{2 O} electrolyte within Pd cathode and the Pt anode by switching between a predetermined low current and high current driving. Both the low current period and the high current period are in constant current mode. Hereinafter, as shown in the schematic enlarged cross-sectional view in FIG. 23, the positional relationship between the Pd cathode and the linear Pt anode wound around the Pd cathode shall be shown.

In the electrode arrangement shown in the schematic enlarged cross-sectional view of FIG. 23, the strength of the electric field from the anode to the cathode is not uniform on the cathode surface. According to Fig. 10 of Reference Document 18, it has been found that a thin insulating film is formed as a "blocking layer" on the surface of the Pd cathode depending on the applied voltage, and the amount of heat generated by this insulating film becomes very large. There is. Hereinafter, this abnormal heat generation phenomenon will be described from the viewpoint of the present inventor with reference to FIGS. 24 to 26.

First, refer to the experimental result (Fig. 2) of Reference Document 19. This graph (Fig. 2) is reproduced in FIG. 24. As can be seen from FIG. 24, as hydrogen storage in Pd progresses, the proportion of Pd-D increases, and the resistivity of the metal increases accordingly. It is considered that the following phenomenon occurs on the surface of the Pd cathode of Reference 18 due to this increase in resistivity.

As shown schematically in FIG. 25 (A), the Pd cathode and linear Pt anode of the experimental apparatus references 18 are opposed with D _{2 O} electrolyte inside, and are driven in a constant current mode do. As shown in FIG. 25 (B), according to Reference 18, a thin insulating film begins to be formed on the surface of the Pd cathode, but since the thickness of this insulating film depends on the electric field, the electric field on the cathode surface is strong. It is possible that an opening (a region where Pd is exposed) that is thick at a portion and thin at a weak portion and is not covered with an insulating film is partially generated. When Pd is exposed in the opening without the insulating film and the exposed portion becomes a current path, D occlusion proceeds only in the opening and the resistance is increased as shown in FIG. 25 (C). In other words, when the insulating film starts to be formed from the initial state where the entire surface of the Pd cathode electrode is the current path, the area of the current path is limited to only the opening without the insulating film, and that portion is further increased in resistance.

When operating in the constant current mode as described above, as the current path area is reduced and the resistance is increased, the voltage rises in order to maintain the current constant. When the voltage becomes high, the current density of the opening which becomes the current path becomes high, and the Pd-D conversion progresses, and the resistance value near the surface of the opening becomes high. Since the power consumption is ^{obtained by I 2} R, the calorific value rises locally in proportion to the rise in R, and the temperature rise due to this further raises the resistance value of the metal and increases the calorific value. Result, D ⁺ is easily hop to the surface T site D by the heat ^- and combined with a fusion as described above is triggered. When the temperature rises due to fusion, further D ⁺ hopping occurs and positive feedback is generated.

It should be noted here that, as shown in FIG. 25 (C), since the high concentration D region (Pd-D) is deeply formed in the portion immediately below the opening of the Pd cathode electrode, the Pd cathode is formed from there. It means that D is supplied to the surface. When D is supplied from the back side of the Pd cathode electrode to the surface in this way, as shown in FIG. 26, D is supplied and He is expelled, cold fusion occurs, which will be described later, and a large amount of heat is generated. It can occur (detailed mechanism is described in FIG. 55). It is considered that this is a rational explanation of the abnormal heat generation phenomenon that occurs sporadically on the surface of the Pd cathode of Reference Document 18.

Further, it is considered that the hypothesis described in Non-Patent Document 4, that is, the hypothesis that a "unique reaction" is generated on the cathode surface by plasma electrolysis in a liquid is basically wrong. It is the inventor's idea that the "unique reaction" on the cathode surface is not caused by plasma electrolysis but is caused by the application of an RF electric field. According to the viewpoint of the present invention, hydrogen is occluded when the RF electrode has a positive potential, and therefore the potential of the hydrogen storage metal is high, and the hydrogen stored when the RF electrode has a negative potential causes a nuclear fusion reaction. I can think. As described above, when the RF electrode negative voltages, the surface of the hydrogen-absorbing metal is free electrons becomes depleted, the vibration energy of the femto D ₂ molecules in T sites of the metal surface is maintained sufficiently high Because.

The present inventor considers the cause of difficulty in controlling the cold fusion experiment described in Non-Patent Document 4 as follows. First, because of the RF voltage, the surface potential of the hydrogen storage metal changes at a high frequency between positive and negative with respect to the counter electrode. When the potential of the metal surface is positive, the free electron density of the metal surface increases and the probability of cold fusion decreases. On the other hand, it is overlooked that the positive potential of the metal surface is necessary for hydrogen storage in the hydrogen storage metal. For this reason, Non-Patent Document 4 erroneously raises the hypothesis that the cause of the "unique reaction" that occurs when an RF voltage is applied is plasma electrolysis. Stable and continuous cold fusion reactions are becoming increasingly difficult to experiment with based on false hypotheses.

A4. Issues As described above, in a fusion reactor based on FPE, the electric field applied to the hydrogen storage metal is not uniformly controlled, and an electric field is generated from the anode to the cathode, so that the metal surface of the cathode is free. There are electrons, which shield the Coulomb attraction. For this reason, fusion can only be triggered at very high temperatures and the autonomous mode cannot be sustained. Further, since the supply of D to the surface of the cathode metal utilizes the phenomenon that the D stored in the bulk in the previous stage is diffused, it becomes difficult to maximize the supply amount of D.

In order to solve these problems and increase the calorific value, it is desirable to meet the following conditions:
-Forming a large number of nanostructures on the metal surface to increase the number of sites where fusion can occur;
-Positive control of metal surface potential;
-Increasing the amount of D supplied (increasing the D storage rate); and-Increasing the cooling efficiency of the heat generating surface (designing a nanostructure in which the liquid efficiently flows on the metal surface).
The above-mentioned FPE-based conventional cold fusion reactor cannot satisfy the above conditions.

Therefore, an object of the present invention is to provide a novel cold fusion device, a heat generating method, and a heat generating device capable of stably and continuously realizing a heat generation phenomenon using a hydrogen storage metal.

<References>
(1) "Hydrogen absorption and hydrogenation reaction by palladium" Tetsuya Ariga (Journal of the Surface Science Society of Japan, "Surface Science" Vol.27, No.6, pp.341-347, 2006, published by the Japan Surface Science Society)
(2) "Observation of atomic and molecular dynamics by neutron scattering" Kiya Otomo, Kazutaka Ikeda (Japan Radioisotope Association academic journal "RADIOISOTOPES" Vol.63, No.10, pp.489-500, Oct 2014, Public Interest Incorporated Association Published by Japan Radioisotope Association)
(3) "Unique hydrogen storage of palladium nanoparticles" Sora Akiba, Maiko Kobu, Osamu Yamamuro (Journal of the Japanese Society of Neutron Sciences "Ripples" Vol.27, No.3, pp.95-98, 2017, published by the Japanese Society of Neutron Sciences )
(4) "Electronic states and reactivity of adsorbed hydrogen and stored hydrogen in metals" Yoshifumi Fukunishi, Masahiko Hata, Hiroshi Nakatsuji (Journal of the Society of Catalysis "Catalysits and Catalysis" Vol.33, No.4, pp.270 -277, 1991, published by the Catalysis Society)
(5) "Applied Physical Properties of Metal Hydride" Masuhiro Yamaguchi (Hydrogen Energy Association (HESS) Journal "Hydrogen Energy System" 1986 vol.11, No.2, pp.30-41)
(6) A. Meulenberg and KP Sinha, “Deep-electron Orbits in Cold Fusion” Journal of Condensed Matter Nuclear Science 13 (2014) pp. 368-377
(7) Jean-Luc Paillet and Andrew Meulenberg, “Highly relativistic deep electrons and the Dirac equation” (22nd International Conference on Condensed Matter Science ICCF-22, at Assisi (Italy), September 8-13, 2019)
(8) "" Cold fusion "recently" Yuh Fukai (Journal of the Physical Society of Japan Vol. 48, No. 5, 1993, pp.354-360)
(9) Jozsef Garai “Physical Model for Lattice Assisted Nuclear Reactions”
(https://vixra.org/pdf/1901.0262v2.pdf)
(10) J. L. Paillet and A. Meulenberg, “Relativity and Electron Deep Orbits of the Hydrogen Atom” Journal of Condensed Matter Nuclear Science 21 (2016) pp. 40-58
(11) J. L. Paillet and A. Meulenberg, “Arguments for the Anomalous Solutions of the Dirac Equations” Journal of Condensed Matter Nuclear Science 18 (2016) pp. 50-75
(12) Jaromir A. Maly and Jaroslav Vavra, “Electron Transitions on Deep Dirac Levels I” FUSION TECHNOLOGY Vo. 24, Nov. 1993, pp. 307-318
(13) Andrew Meulenberg and Jean-Luc Paillet “Nature of the Deep-Dirac Levels” Journal of Condensed Matter Nuclear Science 19 (2016) pp. 192-201
(14) XPZhang, CB Fu and DCDai “Experimentally Study the Deep Dirac Levels with High-Intensity Lasers” Nuclear Experiment (arXiv: 1703.07837 Submitted on 22 Mar 2017 (v1), last revised 24 Mar 2017 (this version, v2))
(15) "Discovering new properties of negatively charged hydrogen-easy to compress and block interactions between metal atoms-" (Kyoto University and Japan Science and Technology Agency (JST) joint presentation (October 2017) 31st),
https://www.jst.go.jp/pr/announce/20171031/index.html)
(16) Takafumi Yamamoto, Dihao Zeng, Takateru Kawakami, Vaida Arcisauskaite, Kanami Yata, Midori Amano Patino, Nana Izumo, John E. McGrady, Hiroshi Kageyama & Michael A. Hayward “The role of π-blocking hydride ligands in a pressure- induced insulator-to-metal phase transition in SrVO2H ”Nature Communications 8, Article number: 1217 (2017)
(17) H. Kozima “PHYSICS OF THE COLD FUSION PHENOMENON” Proc. ICCF13, Sochi, Russia, 2007 (to be published), ResearchGate publication, January 2008
(18) Takahashi. A et al. “Anomalous Excess Heat by D ₂ O / Pd Cell under LH Mode Electrolysis” (in Third International Conference on Cold Fusion, “Frontiers of Cold Fusion”. 1992. Nagoya Japan: Universal Academy Press, Inc., Tokyo, Japan)
(19) Osamu Arai et al. "Elucidation of the precipitation behavior of hydrogen and deuterium in palladium by measuring electrical resistance" (Journal of the Japan Institute of Metals, Vol. 55, No. 3 (1991), pp.254-259)

In order to achieve the above object, according to the present invention, a counter electrode for controlling the surface potential of the hydrogen storage metal substrate is provided in the reaction furnace, and the counter electrode is set to a positive voltage based on the hydrogen storage metal substrate. This causes hydrogen storage in which debris moves into the hydrogen storage metal substrate, and by setting the voltage to negative, the deuterium diffused from the inside to the surface of the hydrogen storage metal substrate causes an excessive exothermic reaction. As one aspect, hydrogen storage and excessive exothermic reaction are temporally switched and separated by switching the voltage of the counter electrode. As another embodiment, a counter electrode to which a positive voltage is applied and a counter electrode to which a negative voltage is applied are provided on both sides of the hydrogen storage metal substrate, respectively, and the hydrogen storage and the excessive exothermic reaction are spatially separated.

According to the first aspect of the present invention, the room temperature nuclear fusion device is provided in the reaction furnace with a hydrogen storage metal substrate made of a metal that stores heavy hydrogen and the hydrogen storage metal substrate facing the hydrogen storage metal substrate. A flat plate-shaped counter electrode for controlling the surface potential of the metal substrate is provided, and if the counter electrode is a counter electrode to which a positive voltage is applied with reference to the hydrogen storage metal substrate, heavy hydrogen is contained in the hydrogen storage metal substrate. It is characterized in that moving hydrogen storage occurs, and in the case of a counter electrode to which a negative voltage is applied, normal temperature nuclear fusion occurs due to heavy hydrogen diffused from the inside to the surface of the hydrogen storage metal substrate.
According to the second aspect of the present invention, the heat generation method is provided in the reaction furnace with a hydrogen storage metal substrate made of a metal that stores heavy hydrogen and the hydrogen storage metal substrate facing the hydrogen storage metal substrate. A flat plate-shaped counter electrode for controlling the surface potential of the hydrogen storage metal substrate is provided, and by applying a positive voltage with the hydrogen storage metal substrate as a reference potential to the counter electrode, heavy hydrogen is generated by the hydrogen storage metal substrate. By causing hydrogen storage that moves inward and applying a negative voltage with the hydrogen storage metal substrate as a reference potential to the counter electrode, the room temperature generated by the heavy hydrogen diffused from the inside to the surface of the hydrogen storage metal substrate It is characterized by generating heat by nuclear fusion.
By controlling the surface potential of the hydrogen storage metal substrate by the applied voltage of the counter electrode in this way, hydrogen storage and cold fusion can occur stably and continuously.
By switching the counter electrode between a positive voltage and a negative voltage with respect to the hydrogen storage metal substrate, hydrogen storage and cold fusion can occur alternately in time. Continuous operation is possible by alternately causing hydrogen storage and cold fusion.
The deuterium oxide between the counter electrode and the hydrogen absorbing metal substrate (D 2 _O) supply port for forming a flow of the electrolyte is provided in the reaction chamber, the surface of the hydrogen-absorbing metal substrate in the direction of the flow It may be composed of an elongated nano-structured heating element. Heating element nanostructure becomes possible deuterium efficient storage by forming the flow direction of D _{2 O} electrolyte.
The first reaction chamber and the second reaction chamber provided in the reaction furnace are spatially separated by the hydrogen storage metal substrate, and the first reaction chamber faces the first surface of the hydrogen storage metal substrate. 1 counter electrode is provided, and a second counter electrode facing the second surface of the hydrogen storage metal substrate is provided in the second reaction chamber, and a positive voltage is applied to the first counter electrode and a negative voltage is applied to the second counter electrode. By applying each of them, hydrogen storage can occur on the first surface of the hydrogen storage metal substrate, and normal temperature nuclear fusion can occur on the second surface. Efficient and continuous heat generation is possible by spatially separating hydrogen storage and cold fusion and causing them to occur in parallel.
The hydrogen storage metal substrate can be formed of a metal having a property that deuterium stored on the first surface diffuses into the second surface through the hydrogen storage metal substrate. If a porous metal is used for the hydrogen storage metal substrate, for example, a single metal substrate can be used.
Deuterium oxide (D 2 _O) electrolyte between the second surface of the hydrogen absorbing metal substrate and between the second counter electrode of the first surface of the hydrogen absorbing metal substrate and the first counter electrode It may have a supply port for forming each of the above flows. Further, a first supply port for forming a flow of deuterium oxide (D 2 _O) electrolyte between the first surface of the hydrogen absorbing metal substrate and the first counter electrode, and the second counter electrode wherein It may have a second supply port that forms a flow of cooling water with the second surface of the hydrogen storage metal substrate. By using the D ₂ O electrolytic solution, it is possible to perform safe and inexpensive D occlusion and efficient cooling as compared with the gas system, and the development becomes easy.
A holding frame may be provided on the first surface of the hydrogen storage metal substrate, and openings in which the metal on the first surface is exposed may be arranged in the holding frame. The holding frame can prevent a decrease in the mechanical strength of the hydrogen storage metal substrate.
The hydrogen storage metal substrate may have a hydrogen separation membrane on the first surface side for selectively permeating deuterium. As a result, deuterium can be selectively stored in the hydrogen storage metal substrate.
_{A first supply port that forms a flow of deuterium (D 2} ) gas between the first counter electrode and the first surface of the hydrogen storage metal substrate, and the second counter electrode and the hydrogen storage metal substrate. It may have a second supply port that forms a flow of cooling water between the second surface and the second surface. _{By using D 2} gas on the hydrogen storage side, it is possible to avoid the formation of an insulating film under high pressure, and on the cold fusion side, using cooling water enables inexpensive and efficient cooling.

According to the third aspect of the present invention, the heat generating device is provided in the reaction furnace with a hydrogen storage metal substrate made of a metal that stores heavy hydrogen and the hydrogen storage metal substrate facing the hydrogen storage metal substrate. A flat plate-shaped counter electrode for controlling the surface potential of the hydrogen storage metal substrate is provided, and if the counter electrode has a positive potential with the hydrogen storage metal substrate as a reference potential, heavy hydrogen moves into the hydrogen storage metal substrate. A heating device in which storage occurs and an excessive exothermic reaction occurs due to heavy hydrogen diffused from the inside to the surface of the hydrogen storage metal substrate if it is a negative potential counter electrode, and the counter electrode is attached to the hydrogen storage metal substrate. On the other hand, by switching between a positive voltage and a negative voltage, hydrogen storage and an excessive exothermic reaction occur alternately in time, and heavy hydrogen oxide (D ₂ O) is generated between the counter electrode and the hydrogen storage metal substrate. ) A supply port for forming a flow of an electrolytic solution is provided in the reaction furnace, and the surface of the hydrogen storage metal substrate is composed of a heating element having a nanostructure extending in the direction of the flow.
By switching the counter electrode between the positive voltage and the negative voltage with respect to the hydrogen storage metal substrate in this way, the hydrogen storage and the excessive exothermic reaction can occur alternately in time, and continuous operation becomes possible. The efficient storage of deuterium is possible by forming the heating elements of the nanostructure in the flow direction of D _{2 O} electrolyte.

According to the fourth aspect of the present invention, in the heating apparatus, a first reaction chamber and a second reaction chamber are provided in the reaction furnace, and a hydrogen storage metal substrate made of a metal that stores heavy hydrogen is the first reaction. The chamber and the second reaction chamber are spatially separated, a flat plate-shaped first counter electrode facing the first surface of the hydrogen storage metal substrate is provided in the first reaction chamber, and the second reaction chamber is provided with the said provided a plate-shaped second counter electrode facing the second surface of the hydrogen storage metal substrate, deuterium oxide (D 2 _O) electrolyte between the first surface of the hydrogen absorbing metal substrate and the first counter electrode A first supply port for forming a flow of liquid or heavy hydrogen (D ₂ ) gas is provided in the first reaction chamber, and cooling water is provided between the second counter electrode and the second surface of the hydrogen storage metal substrate. A second supply port for forming the flow of the hydrogen storage metal substrate is provided in the second reaction chamber, and a positive voltage is applied to the first counter electrode and a negative voltage is applied to the second counter electrode to obtain the hydrogen storage metal substrate. The first surface is characterized by causing hydrogen storage, and the second surface is characterized in that an excessive exothermic reaction is caused by heavy hydrogen diffused from the inside to the surface of the hydrogen storage metal substrate.
Efficient and continuous heat generation is possible by causing hydrogen storage and excessive exothermic reaction in parallel in separate reaction chambers that are spatially separated, and _{by using D 2} gas on the hydrogen storage side, under high pressure. It is possible to avoid the formation of an insulating film in the above, and by using cooling water on the excessive exothermic reaction side, inexpensive and efficient cooling becomes possible.
The hydrogen storage metal substrate can be formed of a metal having a property that deuterium stored on the first surface diffuses into the second surface through the hydrogen storage metal substrate. If a porous metal is used for the hydrogen storage metal substrate, for example, a single metal substrate can be used.
The hydrogen storage metal substrate may be provided with a hydrogen separation membrane on the first surface side for selectively permeating deuterium. As a result, deuterium can be selectively stored in the hydrogen storage metal substrate.

As described above, according to the present invention, an excessive exothermic reaction using a hydrogen storage metal can be stably and continuously generated.

It is a schematic state transition diagram for explaining the process of cold fusion occurring in a metal lattice. It is a figure which shows typically the O site and the T site in the fcc metal lattice. It is a figure which shows typically the number of sites per metal atom in the fcc, hcp and bcc metal lattices. It is a graph which shows the observed diffraction pattern and the calculated diffraction pattern of PdD nanoparticles. Each case is shown. It is a graph which shows the observed diffraction pattern and the calculated diffraction pattern of PdD nanoparticles, (c) is the case where D atom is uniformly located at both O site and T site, (d) is the shell part. The case where it is located at the O site, the T site, and the O site of the core part is shown respectively. It is a figure which shows typically the arrangement of the T site illustrated in FIG. It is a figure which shows typically the arrangement of T sites in a metal lattice on a metal surface. It is a figure which shows typically the size of hydrogen, a hydrogen ion and a hydrogen molecule. It is a graph which shows typically the relationship between the distance between nucleons and the force acting between nucleons. It is a calculation result of the relativistic Schrodinger equation and Dirac equation for a hydrogen atom, and is a table showing the existence of a deep electron orbital (DEO) in the relativistic Schrodinger level. It is a figure which shows typically the crystal structure of SrVO _{2 H.} The positional relationship between the VO ₂ layer and H is a diagram schematically illustrating. The positional relationship between the VO ₂ layer and H when the stress in the vertical direction (one direction) is takes compressed in the vertical direction is a diagram schematically illustrating. It is a graph which shows the change of the lattice parameter with respect to pressure. It is a graph which shows the change of the relative lattice parameter with respect to pressure. It is a figure (A) which shows typically the distribution change of a wave function in the compression process of a D2 molecule, and the graph (B) which shows a normalized probability density distribution. It is a figure which shows typically the state which deuterium is contained in the T site in the metal lattice on the metal surface. It is a figure which shows typically the expansion of T site on a metal surface. It is a graph which shows the change of the binding energy with respect to the distance between hydrogen in free hydrogen and hydrogen in the jellium model. Deuterium cations (D ⁺⁾ is an anion (D ^-) a process of forming a D2 molecule is drawn to the adjacent T sites with a view schematically showing. D ⁺ is D in potential is high ^- potential diagram schematically showing a process of being drawn into the adjacent T sites with (A), the potential is the D ⁺ at a low state D ^- is drawn into the adjacent T sites with It is a potential figure (B) which shows the process schematically. It is a figure which shows typically how the cation (D ⁺ ) is drawn into the anion (D ^{−) of deuterium.} A diagram schematically showing deuterium sandwiched between metal lattices of T-site (A) and a diagram schematically showing a state in which deuterium entering the T-site is reduced by the force acting on the deuterium (A). B). It is a graph which shows the change of the kinetic energy and potential energy with respect to a radius ρ. It is a schematic diagram for demonstrating the vibration state in a site when ^{D +} ^{is injected into D −} of a T site, and the state D2 of a double bond is formed. It is a figure which shows the change of the electron distribution for explaining that the Coulomb occlusion is effective by the presence of DEO. It is a figure which shows typically the arrangement of the reactor and the cathode / anode electrode for explaining the conventional fusion generation mechanism from the viewpoint of this invention. It is a graph which shows the relationship between the hydrogen storage and the resistance value for explaining the conventional fusion generation mechanism from the viewpoint of this invention. It is a figure which shows typically the formation process of the high resistance region in Pd for explaining the conventional fusion generation mechanism from the viewpoint of this invention. It is a figure which shows typically the He eviction process at the surface T site in Pd for explaining the conventional fusion generation mechanism from the viewpoint of this invention. It is a schematic diagram explaining the schematic structure of the cold fusion apparatus by 1st Embodiment of this invention, and the cold fusion generation process. It is a time chart which shows the operation of the cold fusion apparatus by 1st Embodiment. It is a schematic diagram explaining the state of the metal surface in the hydrogen storage stage in FIG. 28. It is a schematic diagram explaining the movement of ^{deuterium ion (D +} ) at the T site of the metal surface in the cold fusion stage in FIG. 28. It is a schematic diagram explaining the state of the T site of the metal surface from hydrogen storage to the occurrence of cold fusion in the cold fusion apparatus according to the first embodiment. It is a figure which shows the schematic structure of the cold fusion apparatus by Example 1.1 of this invention. FIG. 3 is a schematic cross-sectional view for explaining the mechanism of volume expansion in the heating element illustrated in FIG. 32. It is a schematic block diagram of the cold fusion apparatus according to Example 1.2 of this invention. It is a schematic block diagram of the cold fusion apparatus according to Example 1.3 of this invention. It is a process drawing which shows the manufacturing method of the heating element shown in FIG. 35. It is a process drawing which shows the manufacturing method of the heating element following FIG. 35. It is a figure which shows the schematic side structure of the cold fusion apparatus by 2nd Embodiment of this invention. It is a figure which shows the schematic front structure of the cold fusion apparatus shown in FIG. 38. It is a time chart which shows the operation of the cold fusion apparatus by 2nd Embodiment. It is a schematic diagram explaining the state of the T site of the metal surface from hydrogen storage to the occurrence of cold fusion in the cold fusion apparatus according to the second embodiment. It is a schematic plan view (A) of the surface nanostructure of the heating element in the cold fusion apparatus according to Example 2.1 of this invention, and FIG. It is a schematic plan view (A) of the surface nanostructure of the heating element in the cold fusion apparatus according to Example 2.2 of this invention, and the sectional view (B) of the line II-II. It is a figure which shows the schematic front structure of the cold fusion apparatus by Example 2.3 of this invention. It is a figure which shows the schematic front structure of the cold fusion apparatus according to Example 2.4 of this invention. It is a schematic cross-sectional view of the surface nanostructure of the heating element in the cold fusion apparatus according to Example 2.5 of this invention. It is a figure which shows typically the D occlusion and He eviction process of the surface nanostructure of the heating element in Example 2.5. It is a figure which shows the schematic side structure of the cold fusion apparatus by 3rd Embodiment of this invention. It is a figure which shows the schematic side structure of the cold fusion apparatus by Example 3.1 of this invention. It is a figure which shows the schematic front structure of the cold fusion apparatus by Example 3.2 of this invention. It is a figure which shows the schematic front structure of the cold fusion apparatus by Example 3.3 of this invention. It is a figure which shows the schematic side structure of the cold fusion apparatus by 4th Embodiment of this invention. Pd lattice constant of deuterium ^{D x,} deuterium ions ^D -, is a diagram schematically showing the size of the ^{D +} and helium He. It is a figure which shows typically the expansion of the T site on the metal surface for demonstrating the generation process of the fusion reaction in 4th Embodiment. It is a figure which shows typically the state change of the T site on the metal surface for demonstrating the generation process of the fusion reaction in 4th Embodiment. It is a figure which shows the schematic side structure of the cold fusion apparatus by Example 4.1 of this invention. It is a figure (A) which shows the schematic front structure of the D storage side of the cold fusion apparatus by Example 4.1, and the figure (B) which shows the schematic front structure of a cold fusion side. It is a schematic block diagram which shows an example of the wafer holding part of the hydrogen storage metal substrate in the reaction furnace of the cold fusion apparatus by Example 4.1. It is a top view (A) which shows the schematic structure of the hydrogen storage metal substrate assembly in the cold fusion apparatus according to Example 4.2 of this invention, and FIG. It is a top view (A) which shows the schematic structure of the hydrogen storage metal substrate in the cold fusion apparatus according to Example 4.3 of this invention, and FIG. It is a top view (A) and the sectional view (B) which shows the schematic structure of the hydrogen storage metal substrate in the cold fusion apparatus according to Example 4.4 of this invention. It is sectional drawing which shows typically the hydrogen storage region of the hydrogen storage metal substrate in the cold fusion apparatus according to Examples 4.3 and 4.4 of this invention. It is a top view which shows typically the hydrogen storage region of the hydrogen storage metal substrate in the cold fusion apparatus according to Example 4.3 of this invention. It is a figure which shows typically the schematic side structure of the cold fusion apparatus by 5th Embodiment of this invention. It is a figure which shows typically the cross-sectional structure of the hydrogen storage metal substrate in 5th Embodiment. It is a process diagram (A)-(D) which shows an example of the manufacturing process of the hydrogen storage metal substrate in 5th Embodiment.

<Outline of Embodiment>
According to the embodiment of the present invention, the hydrogen storage stage of the hydrogen storage metal and the cold fusion stage are separated temporally or spatially by controlling the potential of the counter electrode facing the hydrogen storage metal. As will be described in detail below, in the first to third embodiments of the present invention, the hydrogen storage stage and the cold fusion stage are temporally switched and separated by switching the polarity of the potential of the counter electrode. Further, in the fourth and fifth embodiments of the present invention, a hydrogen storage metal substrate is arranged at the boundary between the two reaction chambers, and the potentials of the counter electrodes provided in the reaction chambers on both sides are set to positive potential and negative potential, respectively. By doing so, the hydrogen storage stage and the cold fusion stage are spatially separated.

In the time separation method, hydrogen (including hydrogen) stored from the surface of the hydrogen storage metal at the hydrogen storage stage diffuses from the inside of the metal to the surface, causing an excessive heat generation phenomenon. In the space separation method, hydrogen (including hydrogen) stored from one surface of the hydrogen storage metal substrate in the hydrogen storage stage diffuses inside the metal, and an excessive heat generation phenomenon occurs on the other surface.

The cold fusion stage, by the free electrons lowers the surface potential of the hydrogen-absorbing metal depleted, narrow space (diameter ~ about 1Å inscribed sphere) within the metal lattice in a D ^- and D ⁺ maintaining the oscillating motion of the D ₂ molecules bound with bets, cold fusion in the surface of the hydrogen-absorbing metal can be generated stably. Based on the above considerations, cold fusion can occur with high probability by satisfying the following conditions. Although a narrow space in the metal lattice is T site shown in FIG. 3 is a typical example, but the invention is not limited to this, a space in the metal lattice of the same order of magnitude D ^- occlusion it may be a space of the metal grid that expanded force to reduce the D ₂ molecules and acts.

(1) The metal surface of the heating element has a nanostructure or a "nanostructure". This D ^- is likely to enter the T site. Cold fusion occurs when the D filling factor is high in the surface nanostructure of the metal. That D as described above ^- occurs when contained in T site. For example, when the hydrogen storage metal is palladium Pd, it occurs when the deuterium storage rate (D / Pd ratio) exceeds 0.85. In the case of nanoparticles, the bulk ratio is small and the deuterium storage rate (D / Pd ratio) increases at an early stage.
(2) To reduce at least free electrons on the metal surface by controlling the potential on the metal surface. However, in order to accurately control the potential of the metal surface, it is desirable that the metal surface has a controlled nanostructure rather than a “nanostructure” that is naturally formed in the film formation process.
(3) D ^- supplying the ^{D +} T-site are present. As a result, the deuterium molecule D ₂ is confined in the T site, and the D ₂ molecule is transferred to the femto D ₂ molecule by shrinking the T site.
(4) The femto D2 molecule expands and contracts and vibrates in the T site. As a result, _{the nucleons of the femto D 2} molecules approach each other periodically, and the probability of fusion is improved. As explained above, femto protons have a very deep DEO orbit (that is, near the fm order of the proton surface), so that the Coulomb repulsion shielding is almost perfect, and they can be treated as neutrons in substance. Therefore, it is considered that the DEO electrons between dd at this time shield the Coulomb repulsive force between nucleons and improve the probability of fusion. With reference to the graph of FIG. 9, the DEO electrons between dd shield the internuclear Coulomb repulsive force, and as shown in the curve 5d, even if the internuclear distance dd becomes 2.8 fm or less, Coulomb Repulsive force is suppressed and fusion can occur with less energy.

According to the present invention, by supplying hydrogen (H or D) stored in the hydrogen storage stage, fusion can be stably and continuously generated in the cold fusion stage. Hereinafter, embodiments and examples of the present invention will be described in detail with reference to the drawings.

1. 1. The first embodiment will be described below D _{2 O} electrolyte system cold fusion device as an example of the first embodiment of the present invention. D ₂ O is deuterium oxide, and the D ₂ O electrolyte system has the advantages of being safer, cheaper, and easier to develop than the gas system. According to the first embodiment, the hydrogen storage stage and the cold fusion stage are temporally separated by controlling the potential of the counter electrode.

1.1) Configuration As illustrated in FIG. 27, the room temperature nuclear fusion apparatus 100 according to the first embodiment of the present invention has a plate-shaped hydrogen storage metal 101 as a heating element and a surface 101a of the hydrogen storage metal 101. A counter electrode 102 for controlling the surface potential provided at a predetermined distance g, and a polarity switchable power supply 103 capable of switching the potential of the counter electrode 102 with respect to the hydrogen storage metal 101 between a positive potential and a negative potential. Has. The counter electrode 102 has a flat plate-like surface, and is arranged so as to face parallel to the surface 101a of the hydrogen storage metal 101. Further, a heater 105 is provided as a heating means for heating at least the surface of the hydrogen storage metal 101 to a predetermined temperature.

The surface 101a of the hydrogen storage metal 101 has a nanostructure, and various materials such as palladium Pd and nickel Ni can be used as the hydrogen storage metal. Ni undergoes transmutation to Cu by the reaction, but since Cu is stable, there is an advantage that no radioactive substance remains after the reaction. The nanostructure of the hydrogen storage metal 101 can be formed by semiconductor process, nanoimprint lithography or existing methods. Details will be described later.

The hydrogen storage metal 101 and the counter electrode 102 in the reaction furnace are _{arranged in the D 2} O electrolytic solution, and the counter electrode 102 is set to a positive potential so that the hydrogen storage metal 101 stores D in the hydrogen storage stage. As a result, as described above, adjacent T sites containing ^{D +} and D ⁻ in the surface nanostructure of the hydrogen storage metal 101 are generated.

Subsequently, a voltage lower than that of the hydrogen storage metal 101 is applied to the counter electrode 102 to achieve a cold fusion stage. At that time, the hydrogen storage metal 101 is temporarily heated to a predetermined temperature. The heating temperature varies depending on the type of the hydrogen storage metal 101, but is at least 300 ° C. or higher, preferably 500 ° C. or higher, and more preferably 600 ° C. or higher.

In a cold fusion stage in which a negative voltage is applied to the counter electrode 102, free electrons in the metal move from the surface side of the hydrogen storage metal 101 to the bulk side, and the concentration of electrons in the nanostructure of the surface 101a of the hydrogen storage metal 101 increases. descend. Along with this, the effect of shielding the Coulomb force between ^{D +} and D ^- ^{is also reduced, so that D +} occupying the T site can be easily moved to ^{D −} of the adjacent T site by thermal excitation. ..

T site D ⁺ and D ^- that enters, fusion is thought to occur through covalent bonds by a mechanism described in FIG. 1 (A) ~ (H) . It is believed that this fusion produces thermal energy that exceeds the supplied energy (eg, the energy supplied by the heater 105 and the polarity switchable power supply 103). In this way, D _{2 O-based} cold fusion device using D _{2 O} electrolyte solution is to use the heating by the heater 105 to the initial trigger for a long time by turning off the heater 105 becomes the autonomous operation mode Fusion Can be continued.

1.2) Surface potential control As illustrated in FIG. 28, the surface 101a of the hydrogen storage metal 101 is hydrogenated by switching the potential of the counter electrode 102 between a positive potential and a negative potential with respect to the hydrogen storage metal 101. Switch between the storage stage and the room temperature fusion stage and separate them in time. Here, the period when the counter electrode 102 is at a positive potential, that is, the duration of the hydrogen storage stage is T1, and the period when the counter electrode 102 is at a negative potential, that is, the duration of the cold fusion stage is T2, and T1> T2 is set. Has been done. Since the calorific value is almost determined by the supply amount of D, the hydrogen storage efficiency and the stored hydrogen can be adjusted by adjusting the respective lengths (or duty cycles) of T1 and T2 and the positive / negative voltage applied to the counter electrode 102. The consumption efficiency can be maximized. By switching the potential of the counter electrode 102 in this way, the cycle in which D stored in the hydrogen storage metal 101 in the hydrogen storage stage is consumed in the cold fusion stage can be maintained.

<Hydrogen storage stage>
As schematically shown in FIG. 29, the counter electrode 102 is set to a positive potential and an electric field E is applied from the counter electrode 102 toward the surface (nanostructure) 101a of the hydrogen storage metal 101. In this case, as shown in FIG. 29, the free electrons in the metal move to the surface side, and the adjacent T sites are also filled with the free electrons 101b. As a result, the electron concentration near the surface of the metal 101 becomes significantly higher than that in the bulk, and the Coulomb force between ^{D +} and D ^{− occupying the adjacent T sites is shielded.} According to Reference 4, since the Coulomb force is shielded by a distance between protons of only 0.6 Å in a metal, when a positive voltage is applied to the counter electrode 102, D ⁺ goes to ^{D − of the} adjacent T site. The probability of moving is extremely small. Fusion is not generated in this state, D continues to be occluded from the D 2 _O electrolyte.

<Cold fusion stage>
On the other hand, as shown in FIG. 30, when an electric field E is applied from the surface nanostructure of the hydrogen storage metal 101 toward the counter electrode 102 at a negative potential of the counter electrode 102, the free electrons in the metal become the hydrogen storage metal. It moves from the surface side of 101 to the bulk side. Thus, the electron density of the nanostructures in the vicinity of the surface of the hydrogen-absorbing metal 101 is significantly lower than the bulk, reduces the shielding effect of Coulomb attraction of the free electrons occupy adjacent T site D ⁺ and D ^- and The Coulomb force between them becomes large enough. In the present embodiment, by heating the hydrogen storage metal 101 to a predetermined temperature, ^{the probability that the thermally excited D +} pops the potential barrier between the T sites ^{and moves to the D − of the} adjacent T site is increased, thereby increasing the probability. The probability of cold fusion can be increased.

As shown collectively in FIG. 31, in the hydrogen storage stage where the counter electrode 102 has a positive potential, the free electron concentration is high on the metal surface and D storage occurs. After D is occluded, the counter electrode 102 is switched to a negative potential to become a cold fusion stage. That is, as the metal surface potential decreases, the free electrons on the metal surface become depleted, and the thermally excited D ⁺ pops the potential barrier between the T sites, or the D occluded in the metal tunnels. D ^- to move to the surface T site with. Thus, already D ₂ molecule as described trapped within T site, stretching vibration in the T site, fusion occurs by a Coulomb shielding by DEO electrons.

1.3) Effect According to the present embodiment, D is occluded on the metal surface in a hydrogen storage stage in which the counter electrode 102 is set to a positive potential, and then free electrons are stored in a room temperature fusion stage in which the counter electrode 102 is set to a negative potential. Decrease the concentration. Thus it is possible to reduce the Coulomb attraction shielding, thereby hopping to the adjacent T site D ⁺ thermally excited D ^- bound easily as, or D ₂ in the T site occluded D is tunneled into the metal The gas can be contained efficiently. As already mentioned, the stretching movement of the femto D ₂ molecules in the T site, the distance between the nucleons is considered as the distance when the closest approach shrinks until fusion possible position when fusion occurs. Here, if free electrons are present around the _{femto D 2} _{molecule, the free electrons become resistance to the movement of the femto D 2} molecule, and the movement speed gradually decreases and the interval at the time of closest approach increases. In contrast, when the vibration of the femto D ₂ molecules in the T site continues long term, increases the closest approach number between nucleons due to vibration, the greater the probability that thereby approaching nucleons distance until fusion distance .. Therefore, _{reducing the free electron concentration around the femto D 2} molecule has the advantage of increasing the probability of cold fusion.

Further, according to the present embodiment, by alternately switching the counter electrode 102 between the positive potential and the negative potential, hydrogen is occluded in the hydrogen storage stage and the stored hydrogen is consumed in the cold fusion stage. Can be repeated, and stable cold fusion can be continuously generated on the metal surface. This cycle will be described in detail later.

Hereinafter, examples of the surface nanostructure of the hydrogen storage metal 101 in the cold fusion device to which the present embodiment is applied will be described.

<Example 1.1>
As the nanostructure of the metal surface, a nanodot array in which the dot size and spacing are controlled to several nm to several hundred nm can be used. For example, according to Japanese Patent No. 5652817 (method for forming nanodots) and Japanese Patent No. 5875066 (method for manufacturing nanodot array plates), a method for producing nanodots and nanodot arrays whose size and density can be preferably controlled is disclosed. Hereinafter, as Example 1.1 of the present invention, a cold fusion device using nanodots as a heating element will be described.

As illustrated in FIG. 32, the cold fusion device according to the present embodiment has a configuration in which an array of hemispherical (hereinafter referred to as dome-shaped) nanodomes 201 is formed on the surface of the hydrogen storage metal 101 as a heating element. Have. Needless to say, in FIG. 32, the nanodome shape is enlarged and described for the sake of explanation, and a large number of nanodomes 201 controlled by the nanoorder are formed on the entire surface of the hydrogen storage metal 101. The nanodome 201 is made of a hydrogen storage metal, for example palladium (Pd). Instead of the hydrogen storage metal 101, a metal material having a slow hydrogen diffusion rate and a high thermal conductivity, for example, iron (Fe) can be used.

Further, a counter electrode 102 for controlling the surface potential is provided at a position separated from the surface of the hydrogen storage metal 101 by a predetermined distance g, and the polarity switchable power supply 103 makes hydrogen with respect to the hydrogen storage metal 101 on which the nanodome array is formed. In the storage stage, the counter electrode 102 applies a positive potential, and in the room temperature fusion stage, a negative potential is applied. The nanodome 201 may be heated to a predetermined temperature by a heating means (heater 105) (not shown).

The dome shape of each nanodome 201 has the following advantages. Since there are no metal atoms on the upper side of the surface of the nanodome 201, stress relaxation is possible even if ^{D − enters the T site.} For this reason, the increase in the energy of the system due to the expansion of the lattice is reduced, the expansion width is increased, and D ⁻ is likely to enter the T site.

More specifically, as schematically shown in FIG. 33, the dome-shaped nanodome 201 is hemispherical and has a positive and large surface curvature. For this reason, even if the grid expands outward (opposite the bulk) from the original nanodome 201a to the nanodome 201b, the original volume 210a per unit grid can easily increase to a larger volume 210b. At that time, it is less likely to receive stress from other lattices. That is, expansion is facilitated on an outer surface having a positive curvature and a large shape such as a sphere. Thus there is room to expand the domed Nanodomu 201 at T site, D ^- is a very suitable shape to occlude.

In the above-mentioned dome-shaped nanodome 201, after forming a hydrogen storage metal layer, the conditions of isotropic etching are changed stepwise in the depth direction to change the lateral etching rate in the depth direction. It can be formed.

According to this embodiment, the potential of the counter electrode 102 is made higher than that of the hydrogen storage metal 101 so that the hydrogen storage metal 101 stores hydrogen. Subsequently, by applying a negative potential to the hydrogen storage metal 101, the electron concentration of the nanostructure composed of the nanodome 201 is significantly reduced as described above, and the thermally excited D ⁺ is the potential barrier between the T sites. the to D of adjacent T sites popping ^- easily move to or occluded D in the metal tends to tunneling to the surface T site. Thus D ₂ molecules transitions to femto D ₂ molecule by reduction of the T sites as described above, the higher the probability of occurrence of cold fusion by oscillatory motion is sustained.

<Example 1.2>
The nanostructure of the metal surface in Example 1.1 is not limited to the dome shape. Hereinafter, as Example 1.2 of the present invention, a cold fusion device using a nanocone as a heating element will be described. In Example 1.2, the same surface potential control as in Example 1.1 described above is performed.

As illustrated in FIG. 34, the cold fusion device according to Example 1.2 has a configuration in which an array of nanocorns 301 is formed on the surface of the hydrogen storage metal 101 as a heating element. The nanocone 301 has a conical shape with a hemispherical tip, and is made of a hydrogen storage metal such as palladium (Pd). A counter electrode 102 for controlling the surface potential is provided at a position separated from the surface of the hydrogen storage metal 101 by a predetermined distance g, and the polarity switchable power supply 103 has a positive potential or a negative potential with respect to the array of the nanocones 301. A voltage is applied. The nanocone 301 may be heated to a predetermined temperature by providing a heating means (not shown) as in Example 1.1.

Since the tip of the nanocone 301 is hemispherical, it is suitable for occlusion of ^{D − as in Example 1.1 above.} Further, since an electric field is applied to the hemispherical tip portion and the conical side surface of the nanocone 301, it is possible to avoid concentration of the electric field on the tip portion, and a uniform electric field can be applied to the entire array of the nanocone 301. As a result, cold fusion with even better controllability can be realized.

According to Example 1.2 of the present invention, the hydrogen storage metal 101 is made to store hydrogen by making the potential of the counter electrode 102 higher than that of the hydrogen storage metal 101. Subsequently, by applying a negative potential to the hydrogen storage metal 101 to the counter electrode 102, the electron concentration of the nanostructure composed of the nanocone 301 is significantly reduced as described above, and thermal excitation or transfer from inside the metal to the surface is performed. diffusion D ⁺ is D in the surface T site by ^- combined with transitions to femto D ₂ molecule D ₂ molecule by reduction of the T site, the higher the probability of occurrence of cold fusion by oscillatory motion is sustained.

<Example 1.3>
Another variation is possible for the nanocone 301 as a nanostructure on the metal surface. Hereinafter, the nanocone used for the heating element according to Example 1.3 of the present invention and a method for producing the same will be described. Note that Example 1.3 is also applicable to Examples 1.1 and 1.2 described above.

As illustrated in FIG. 35, the heating element of the cold fusion device according to Example 1.3 of the present invention is composed of nanocones 301 having the same shape as that of Example 1.2, and each nanocone 301 has a metal layer. It is laminated on the nanopillar 302a formed in 302. Such nanostructures are, for example, the biotemplate used in the Tohoku University press release (“Observing the InGaAs nanodisk structure by realizing the formation of a three-dimensional quantum dot structure for the first time in the world” announced on September 2, 1945). It can be manufactured by applying a manufacturing technique using a neutral particle beam. An example of the manufacturing method is shown below.

In FIGS. 36A and 36B, the metal layer 402 is laminated on the support substrate 403, and the hydrogen storage alloy layer 401 having the required film thickness d is further laminated on the metal layer 402. As the laminating method, a film forming method such as CVD can be used. Subsequently, the protein 502 containing the iron core 501 is arranged on the hydrogen storage alloy layer 401.

In FIG. 37, by removing the protein 502, the iron core 501 remains on the hydrogen storage alloy layer 401 at regular intervals (step A). Subsequently, a part of the hydrogen storage alloy layer 401 and the metal layer 402 is removed by etching with the neutral particle beam using the iron core 501 as a mask, and the metal layer 402 and the hydrogen storage alloy layer 401 having a conical side surface are further formed by etching. (Step B). Finally, by removing the iron core 501, nanocorns 301 arranged at predetermined intervals can be formed (steps C and D). Note that FIG. 37 (C) is a cross-sectional view taken along the line AA of the plan view shown in FIG. 37 (D).

By using such a nanocone structure, the ratio of surface area becomes overwhelmingly large in terms of the ratio of bulk to surface area. Since the nanocone 301 is formed on the metal layer 402 having a high thermal conductivity, the heat exchange efficiency is good, and energy can be efficiently extracted from the nanocone 301 which is a heating element.

2. _{Second Embodiment According to the second embodiment of the present invention, the D 2} O electrolytic solution flows between the surface of the hydrogen storage metal and the counter electrode while switching the surface potential of the hydrogen storage metal as in the first embodiment. It is configured as follows. In particular the heating element of the hydrogen absorbing surface is designed in a shape that can efficiently store hydrogen and easily stream D _{2 O} electrolyte. Hereinafter, the members having the same functions as those in the first embodiment of FIG. 27 will be assigned the same reference numbers, and detailed description thereof will be omitted.

2.1) Configuration As illustrated in FIGS. 38 and 39, the cold fusion apparatus according to the present embodiment is configured by arranging a hydrogen storage metal 101 and a counter electrode 102 for controlling the surface potential in the reactor 601. NS. _{A plurality of supply pipes 602 for supplying the D 2} O electrolytic solution between the hydrogen storage metal 101 and the counter electrode 102 are provided at the lowermost portion of the reactor 601 and a gas discharge port 603 is provided on the upper surface of the reactor 601. Is provided. The hydrogen storage metal 101 has a wafer shape and is fixedly held in the reaction furnace 601 by a plurality of slot-shaped holding portions 604. As typically shown in FIG. 39, the wafer-shaped hydrogen storage metal 101 is inserted and held in the slots of the plurality of holding portions 604. With the four holding portions 604 shown in FIG. 39, the hydrogen storage metal 101 can be fixedly held regardless of whether it is a circular wafer or a rectangular wafer.

In the present embodiment, the plurality of holding portions 604 also serve as the same heating means as the heater 105 in the first embodiment. Further, a flat plate-shaped counter electrode 102 is fixedly arranged parallel to the surface of the hydrogen storage metal 101 and separated by a predetermined distance g.

_{The D 2} O electrolytic solution F1 flows into the supply pipe 602 from the outside of the reactor 601 and forms a flow _{of the D 2} O electrolytic solution F2 between the hydrogen storage metal 101 and the counter electrode 102. On the surface of the counter electrode 102 side of the hydrogen storage metal 101, heating element 701 of nanostructures extending along a direction F2 of the flow of D 2 _O electrolyte are arranged in a direction perpendicular to the direction F2, the adjacent heating valley between the body 701 forms a flow path of D _{2 O} electrolyte. The nano-structured heating element 701 may be formed by etching the surface of the hydrogen storage metal 101, or a metal having a small hydrogen storage rate and a hydrogen diffusion coefficient is used as a support substrate, and a hydrogen storage metal is formed and etched on the support substrate. It may be formed by. The contact area between the heating element 701 and the D _{2 O} electrolyte is increased by this structure, storage and cold fusion reaction of hydrogen is more efficient.

As described in the first embodiment, the polarity switchable power supply 103 switches the potential of the counter electrode 102 with respect to the hydrogen storage metal 101 between a positive potential and a negative potential. Further, the holding portion 604 that also serves as a heater can heat at least the surface of the hydrogen storage metal 101 to a predetermined temperature.

2.2) Surface potential control As illustrated in FIG. 40, the surface nanostructure of the hydrogen storage metal 101 is changed by switching the potential of the counter electrode 102 between the positive potential and the negative potential with respect to the hydrogen storage metal 101. It is possible to switch between the hydrogen storage stage and the room temperature fusion stage. Similar to the first embodiment, the period when the counter electrode 102 is at a positive potential, that is, the duration of the hydrogen storage stage is T1, and the period when the counter electrode 102 is at a negative potential, that is, the duration of the cold fusion stage is T2. T1> T2 is set. That is, by lengthening the duration T1 of the hydrogen storage stage, a sufficient amount of D can be occluded, and the calorific value in the cold fusion stage can be increased. However, it differs from the first embodiment in that a stage switching period is provided. Generates heat by cold fusion reaction in cold fusion stage, its heat is utilized downstream of the generator as D _{2 O} vapor is recovered by evaporation of the cooling by the flow of D2O electrolyte F2 D _{2 O} electrolyte. By switching the potential of the counter electrode 102 in this way, the cycle in which D stored in the hydrogen storage metal 101 in the hydrogen storage stage is consumed in the cold fusion stage can be maintained.

The heating element 701 according to the present embodiment is designed so that it can be manufactured by using the 12-inch silicon wafer process apparatus of the semiconductor process apparatus as an example. In other words, using a 12-inch φ metal substrate or a diamond substrate with high thermal conductivity, a nanostructure is formed on the substrate by a self-alignment process or a process such as that used in semiconductor device manufacturing. You can also. Alternatively, it is also possible to form nanostructures by utilizing the unevenness of the surface of a metal substrate or a polycrystalline diamond substrate. By using such a wide 12-inch φ substrate, heat can be cooled directly from the wide back surface by water cooling, and heat exchange can be performed efficiently. In addition, by blasting the surface side of the substrate to form irregularities, or by using a polycrystalline diamond substrate in an uneven state without polishing the surface, the nanostructure of irregularities on the substrate surface can be inexpensively used. It is possible to form a hydrogen storage metal having. It is also possible to form inexpensive concavo-convex nanostructures using nanoimprint lithography. Nanoimprint lithography is a technology that can produce a fine pattern of about 10 nm with high cost performance by pressing a mold with a fine pattern against the resin, irradiating it with ultraviolet rays, etc. to cure the resin, and then peeling off the mold.

As shown collectively in FIG. 41, in the hydrogen storage stage where the counter electrode 102 has a positive potential, the free electron concentration is high on the metal surface and only D storage occurs. After D is occluded, the counter electrode 102 is switched to a negative potential to become a cold fusion stage. That is, the decrease in the metal surface potential depletes the free electrons on the metal surface, and the thermally excited D ⁺ pops the potential barrier between the T sites ^{and easily moves to the D − of the} adjacent T site, or the metal. The D stored inside can be easily tunneled to the surface T site. Thus, already D ₂ molecule as described trapped within T site, stretching vibration in the T site, fusion occurs by a Coulomb shielding by DEO electrons.

2.3) Effect According to the first embodiment, hydrogen is occluded and occluded in the hydrogen storage stage by alternately switching the counter electrode 102 between the positive potential and the negative potential as in the first embodiment. The cycle of consuming the hydrogen in the cold fusion stage can be repeated, and stable cold fusion can be continuously generated on the metal surface. _{In particular, the D 2} O electrolytic solution is configured to flow between the hydrogen storage metal surface and the counter electrode, and the _{heating element on the hydrogen storage surface is formed into a shape that allows the D 2} O electrolytic solution to easily flow and makes hydrogen storage efficient. As a result, more efficient room temperature fusion can be continuously generated.

Hereinafter, examples of the surface nanostructure (heating element 701) of the hydrogen storage metal 101 and the reactor in the cold fusion device to which the present embodiment is applied will be described. As for the polarity switchable power supply 103, since the potential of the counter electrode 102 with respect to the hydrogen storage metal 101 is switched between the positive potential and the negative potential as in the first embodiment, the description thereof will be omitted in the following examples. Further, since the probability of cold fusion occurring by heating the hydrogen storage metal 101 to a predetermined temperature is increased as described in the first embodiment, the description thereof will be omitted.

<Example 2.1>
As illustrated in FIG. 42 (A), according to Example 2.1 of the invention, the surface of the counter electrode 102 side of the hydrogen storage metal 101, extends along a direction F2 of the flow of D 2 _O electrolyte The striped heating elements 801 are arranged in a direction orthogonal to the direction F2. The striped heating element 801 is an example of the heating element 701 described above. The heating element 801 is formed by forming the surface of the hydrogen storage metal 101 into a nanostructure. Further, as illustrated in FIG. 42 (B), the cross section of the striped heating element 801 is trapezoidal, the space spacing between the upper surfaces of the adjacent heating elements 801 is s, the width of the striped upper surface 801a is L, and heat is generated. Assuming that the depth of the body 801 is Dp, for example, s = 100 nm, L = 1 nm, and Dp = 500 nm.

However, the width L of the striped upper surface 801a is the minimum value, and in reality, random irregularities having a _{radius of curvature r 0 or less are formed on the upper surface 801a of the width L.} Such unevenness is also formed on the side surface 802 of each heating element 801. However, the unevenness is averaged toward the lower side of the upper surface. The radius of curvature r ₀ of the unevenness is a random value smaller than 2 nm.

Such an uneven shape can be formed as follows. _{A striped resist pattern having a width L having random irregularities having a radius of curvature r 0} or less is formed on the upper surface of the hydrogen storage metal 101, and dry etching is performed using the resist pattern having the irregular edges as a mask. As a result, the etched edges near the upper surface faithfully reflect the resist shape _{and become random irregularities with a radius of curvature r 0} or less, but are averaged as they go downward. Further, by forming a step in the depth direction by dry etching, the unevenness of the side surface 802 as shown in FIG. 42 can be formed.

By forming a striped heating element 801 having a random uneven edge with a radius of curvature r ₀ _{or less on the surface of the hydrogen storage metal 101, the contact area with the D 2} O electrolytic solution flowing in the arrow F2 direction is increased, and the efficiency is increased. Hydrogen storage and cold fusion reaction can be realized.

<Example 2.2>
The present invention is not limited to the embodiment of Example 2.1 above, and a hydrogen storage metal may be formed in another nanostructure on a support substrate described later.

As illustrated in FIG. 43 (A), according to Example 2.2 of the invention, the surface of the counter electrode 102 side of the supporting substrate which will be described later, extend along a direction F2 of the flow of D 2 _O electrolyte The striped heating elements 900.1 and 900.2 are arranged in a direction orthogonal to the direction F2. The striped heating elements 900.1 and 900.2 are examples of the above-mentioned heating elements 701. The upper surface of the striped heating element 900.1 has a shape in which circles 901a having a radius r are arranged in contact with each other along a central stripe having a width d, and a boundary portion 901b of adjacent circles 901a has a width d of the central stripe. Has. The upper surface of the striped heating element 900.2 has a shape in which the phase of the upper surface of the striped heating element 900.1 is shifted along the direction F2 by a distance r. Therefore, the II-II line cross sections of the striped heating elements 900.1 and 900.2 in FIG. 43 (A) have different trapezoids as shown in FIG. 43 (B).

Further, as illustrated in FIG. 43 (B), the space spacing between the center of the circle 901a on the upper surface of the striped heating element 900.1 and the upper surface 901b of the heating element 900.2 is s, and the radius of the circle 901a is set. If the width of the boundary of the circle of the heating element 900.2 is d and the depths of the heating elements 900.1 and 900.2 are Dp, for example, s = 80 nm, r = 20 nm, d = 6 nm, Dp = It is 100 nm.

However, the edge of the circle 901a of the upper surface which are arranged in stripes, as in Example 2.1 above, in fact may be formed random unevenness of curvature radius r ₀ of 2nm or less. Such irregularities may be formed on the side surfaces of the heating elements 900.1 and 900.2, but the irregularities are averaged downward from the upper surface by the etching described above.

As shown in FIG. 43 (B), etching needs to be stopped at a depth of Dp. Therefore, in this embodiment, the surface of the copper Cu metal substrate 110 is covered with the etching stop film 111 as the support substrate. The etching stop film 111 is preferably a metal having a small hydrogen storage rate and a hydrogen diffusivity, and platinum Pt can be used, for example. Further, it is desirable to use platinum Pt for the counter electrode 102 in consideration of ionization tendency.

<Example 2.3>
Another present invention is not limited to the above examples 2.1 and 2.2, the hydrogen storage metal 101 the wafer holding means as long as circular wafers Considering the flow of D _{2 O} electrolyte Can also be structured.

As illustrated in FIG. 44, cold fusion device according to this example is 38 and the basic configuration is the same, the structure of the supply pipe of the wafer holder and the D _{2 O} electrolyte is different. That is, a pair of slot-shaped holding portions 604a are arranged so as to support the circular wafer-shaped hydrogen storage metal 101a from both the left and right sides. The pair of holding portions 604a also serve as the same heating means as the heater 105 in the first embodiment. Further, similarly to the first embodiment, the plate-shaped counter electrode 102 is fixedly arranged parallel to the surface of the hydrogen storage metal 101a and separated by a predetermined distance g.

In this embodiment, a plurality of supply pipes 602a are arranged in the lower part of the reactor 601 so as to be along the lower edge of the circular wafer-shaped hydrogen storage metal 101a. Spout for the entire surface forming a flow of D _{2 O} electrolyte F2 between the hydrogen storage metal 101a and the counter electrode 102 in each of the supply pipe 602a is provided. Note that the surface of the counter electrode 102 side of the hydrogen storage metal 101a and the heating element 701 of nanostructures extending along a direction F2 of the flow of D _{2 O} electrolyte are arranged in a direction perpendicular to the direction F2, the adjacent valley between the heating element 701 forms a flow path of D _{2 O} electrolyte.

<Example 2.4>
The present invention is not limited to the above examples 2.1-2.3, hydrogen storage metal 101 the wafer holding means as long as rectangular wafers another considering the flow of D _{2 O} electrolyte It can also be structured.

As illustrated in FIG. 45, in the cold fusion device according to the present embodiment, a pair of slot-shaped holding portions 604b are arranged so as to support the rectangular wafer-shaped hydrogen storage metal 101b from both the left and right sides. The pair of holding portions 604b also serve as the same heating means as the heater 105 in the first embodiment. Further, a rectangular plate-shaped counter electrode 102b (not shown) is fixedly arranged parallel to the surface of the rectangular hydrogen storage metal 101b at a predetermined distance g. The potential of the counter electrode 102b is switched between positive and negative with respect to the hydrogen storage metal 101b as in the first embodiment.

In this embodiment, a plurality of supply pipes 602b are arranged in the lower part of the reactor 601 so as to be along the lower edge of the rectangular wafer-shaped hydrogen storage metal 101b. Spout for the entire surface forming a flow of D _{2 O} electrolyte F2 between the hydrogen storage metal 101b and the counter electrode 102 in each of the supply pipe 602b is provided. Note that the surface of the counter electrode 102 side of the hydrogen storage metal 101b and the heating element 701 of nanostructures extending along a direction F2 of the flow of D _{2 O} electrolyte are arranged in a direction perpendicular to the direction F2, the adjacent valley between the heating element 701 forms a flow path of D _{2 O} electrolyte.

<Example 2.5>
The present invention is not limited to the striped heating element exemplified in Examples 2.1 to 2.4, and the nanocone-shaped heating element exemplified in Examples 1.1 to 1.3 is D _2. O The form may be arranged so as to form a flow path of the electrolytic solution.

As illustrated in FIG. 46, according to the embodiment 2.5 of the present invention, an array of nanocone 301a as heating element along the direction of flow of D _{2 O} electrolyte on the surface of the counter electrode 102 side of the supporting substrate It is arranged. The nanocone 301a in this embodiment is made of nickel (Ni) which is a hydrogen storage metal, the interval s between the heating elements 301a is 80 nm, the upper surface of the heating element 301a has a width d = 20 nm, and the depth Dp of the heating element 301a is, for example, described above. It can be 100 nm as illustrated in Example 2.2.

Incidentally, the upper surface edges of each nanocone 301a, as in Example 2.1 above, in fact may be formed random unevenness of curvature radius r ₀ of 2nm or less. Such unevenness may be formed on the side surface of each heating element 301a, but the unevenness is averaged as it goes below the upper surface by the etching described above.

Further, as a support substrate, the front surface of the copper Cu metal substrate 101a is covered with a metal for preventing hydrogen diffusion (here, platinum Pt), and the back surface is also covered with the same Pt. As a result, hydrogen diffusion and metal elution can be prevented, and when the nanocone 301a is formed by etching, the etching can be stopped at a depth of Dp. The potential of the corresponding electrode 102 is switched between positive and negative with respect to the nanocone 301a as described above. Therefore, the hydrogen storage and cold fusion reactions described above proceed as follows on the surface of each nanocone 301a according to the potential switching of the counter electrode.

As schematically shown in FIG. 47, when the counter electrode 102 has a more positive potential than the nanocone 301a, as described above, D penetrates into the metal of the nanocone 301a through the surface T site without He and is adjacent to the nanocone 301a. It diffuses in the metal by sequentially moving to the O-site. The occluded D is retained in the O site in the neutral atomic state D ⁰ , and the D concentration in the nanocone 301a gradually increases. When the counter electrode 102 is switched to a more negative potential than the nanocone 301a in this state, free electrons are depleted on the metal surface and nuclear fusion occurs as described above.

The detailed mechanism will be described in FIG. 55 of the fourth embodiment, but when He generated at the surface T site by nuclear fusion, when the neutral D ⁰ in the O site is tunneled to the surface T site as a cation D ^{+, the cation is positive.} ions D ⁺ anion D receives electrons from electronegativity of metal ^- becomes. The size of the anion D ^- is significantly increased, which causes the surface T-site to swell and He to be expelled from the T-site.

At the T site where He is expelled and ^{expanded by D −} ^{, D 0} is ^{tunneled as D +} by diffusion from the O site, and a fusion reaction occurs subsequently. By switching between positive and negative, hydrogen storage, eviction of He, and cold fusion reaction can be continuously generated.

By supplying D from the O site inside the metal of the nanocone 301a to the surface T site in this way, He is expelled and a continuous cold fusion reaction becomes possible.

3. 3. Third Embodiment In the third embodiment of the present invention, the surface potential of the hydrogen storage metal arranged in the reaction furnace is switched by the counter electrode as in the second embodiment, and the surface potential of the hydrogen storage metal is switched between the surface of the hydrogen storage metal and the counter electrode. D 2 _O electrolyte is configured to flow, but is different in the following points. According to the third embodiment, the insulating wafer is provided with hydrogen storage metals on both sides, and the surface potential of each hydrogen storage metal is switched and controlled by the corresponding counter electrodes. Hereinafter, a configuration different from that of the second embodiment of FIG. 38 will be described, and members having the same function will be assigned the same reference number and detailed description will be omitted.

As illustrated in FIG. 48, according to the present embodiment, the hydrogen storage metals 101.1 and 101.2 are formed on both sides of the insulating wafer 101.3, respectively, and the hydrogen storage metals 101.1 and 101.2. Opposing electrodes 102.1 and 102.2 are provided opposite to each other. Hereinafter, the substrate configuration including the hydrogen storage metals 101.1 and 101.2 and the insulating wafer 101.3 will be referred to as a double-sided metal substrate Sc.

As an example, in the double-sided metal substrate Sc, the hydrogen storage metal 101.1 is formed on one surface of the first insulating wafer, the hydrogen storage metal 101.2 is formed on one surface of the second insulating wafer, and the first and second insulating wafers are formed. It can be manufactured by laminating the other surfaces of the insulating wafers of the above.

The double-sided metal substrate Sc is arranged in the reaction furnace by a plurality of holding portions 604 that also serve as a heater and a holder, and counter electrodes 102.1 and 102.2 are arranged on both sides thereof with a distance g, respectively. The polarity switchable power supply 103 switches the potentials of the counter electrodes 102.1 and 102.2 to positive or negative potentials with respect to the potentials of the hydrogen storage metals 101.1 and 101.2 (see FIG. 40).

Similar to FIGS. 38 and 39, a plurality of supply pipes 602 are provided at the lowermost portion of the reactor 601 (not shown), and a gas discharge port 603 is provided on the upper surface of the reactor 601. Supply pipe 602 forms a flow F2.1 of _{D 2} O electrolyte between the hydrogen storage metal 101.1 and the counter electrode 102.1, between the hydrogen storage metal 101.2 and a counter electrode 102.2 It can be configured to form a D _{2 O electrolyte flow F2.2.} Further, the nanostructures described in the second embodiment can be adopted for the surfaces of the hydrogen storage metals 101.1 and 101.2.

Hereinafter, an example of a reactor in a cold fusion device to which this embodiment is applied will be described. As for the polarity switchable power supply 103, since the potential switching control of the counter electrode is performed in the same manner as in the second embodiment, the description thereof will be omitted in the following examples. Further, since the heating of the hydrogen storage metal is as described in the first embodiment, the description thereof will be omitted.

<Example 3.1>
As illustrated in FIG. 49, according to Example 3.1 of the present invention, the reaction furnace 601 has an electrode structure composed of counter electrodes 102.1 and 102.2 shown in FIG. 48 and a double-sided metal substrate Sc. A plurality of electrodes are arranged, and counter electrodes having adjacent electrode structures are shared. In other words, in FIG. 49, the counter electrode E and the double-sided metal substrate Sc are alternately arranged at predetermined intervals g so that the hydrogen storage metals 101.1 and 101.2 of each double-sided metal substrate Sc are respectively arranged. On the other hand, the counter electrodes E are arranged at predetermined intervals g. A supply pipe 602 is piped so that the _{D 2} O electrolytic solution flows over the entire surface between the hydrogen storage metals 101.1 and 101.2 of each double-sided metal substrate Sc and the counter electrode E.

Two

exhaust gas valves

605 and 606 are provided in the gas discharge port 603 provided on the upper surface of the reaction furnace 601. The

exhaust gas valves

605 and 606 in this embodiment are controlled to open and close so that the _{D 2} _{O steam generated in the cold fusion stage is discharged from the exhaust gas valve 605 and the O 2} gas generated in the hydrogen storage stage is discharged from the exhaust gas valve 606.

<Example 3.2>
Double-metal substrate Sc in the present embodiment the wafer holding means as long as circular wafers can also be another structure in consideration of the flow of D _{2 O} electrolyte.

As illustrated in FIG. 50, the cold fusion apparatus according to this embodiment has the same basic configuration as that of Example 2.3 in FIG. 44, but is provided with two

exhaust gas valves

605 and 606 at the discharge port 603. The point is different. The pair of slot-shaped holding portions 604a are arranged so as to support the circular wafer-shaped double-sided metal substrate Sc from both the left and right sides as in the second embodiment. Further, a plurality of supply pipes 602a are arranged in the lower part of the reactor 601 so as to be along the lower edge of the circular wafer-shaped double-sided metal substrate Sc. Each supply pipe 602a and spout for forming a flow of the entire surface D _{2 O} electrolyte F2 between the opposite sides of the counter electrode 102 of the double-sided metal substrate Sc is provided. Incidentally, and heating element 701 of nanostructures on the surface of both surfaces of the hydrogen storage metal double-sided metal substrate Sc extending along the direction F2 of the flow of D _{2 O} electrolyte is arranged in a direction perpendicular to the direction F2, adjacent valley between the heating element 701 which is to form the flow path of D _{2 O} electrolyte.

<Example 3.3>
The present invention is not limited to the embodiment of Example 3.2, and if the double-sided metal substrate Sc is a rectangular wafer, the wafer holding means may have another structure in consideration of the flow of the _{D 2 O electrolytic solution.} can.

As illustrated in FIG. 51, in the cold fusion device according to the present embodiment, a pair of slot-shaped holding portions 604b are arranged so as to support the rectangular wafer-shaped double-sided metal substrate Sc from both the left and right sides. A rectangular plate-shaped counter electrode 102 (not shown) is fixedly arranged parallel to the surface of the rectangular double-sided metal substrate Sc at a predetermined distance g. The potential of the counter electrode 102 is switched between positive and negative with respect to the hydrogen storage metal 101b as in the first embodiment. Further, a plurality of supply pipes 602b are arranged in the lower part of the reactor 601 so as to be along the lower edge of the rectangular wafer-shaped double-sided metal substrate Sc. Spout for the entire surface forming a flow of D _{2 O} electrolyte F2 between the hydrogen storage metal 101b and the counter electrode 102 in each of the supply pipe 602b is provided. Note that the surface of the counter electrode 102 side of the hydrogen storage metal 101b and the heating element 701 of nanostructures extending along a direction F2 of the flow of D _{2 O} electrolyte are arranged in a direction perpendicular to the direction F2, the adjacent valley between the heating element 701 forms a flow path of D _{2 O} electrolyte.

4. Fourth Embodiment According to the fourth embodiment of the present invention, two reaction chambers are provided in the reaction furnace, and these reaction chambers are separated by a hydrogen storage metal substrate. The hydrogen storage metal substrate is composed of a metal that occludes hydrogen on one surface and diffuses the stored hydrogen to the other surface inside the substrate, and nickel (Ni) can be used as the metal having such a property. can. Therefore, by arranging a positive potential counter electrode in one reaction chamber and a negative potential counter electrode in the other reaction chamber, one reaction chamber side of the hydrogen storage metal substrate is placed in the hydrogen storage stage and the other reaction is carried out. The chamber side can be a normal temperature fusion stage, and these can be spatially separated. Hereinafter, a cold fusion device using such a hydrogen storage metal substrate will be described.

4.1) Configuration As illustrated in FIG. 52, reaction chambers 601.1 and 601.2 are provided in the reaction furnace 601 and these reaction chambers are separated by a hydrogen storage metal substrate M. The hydrogen storage metal substrate M is fixedly held by the holding portion 604 that also serves as a heating means, and the ground potential V0 is applied from the DC power supply 103a. In the reaction chamber 601.1, the counter electrode 102 (E +) is arranged on the D storage surface (Md) side of the hydrogen storage metal substrate M at a predetermined distance g1 and has a constant positive voltage V + (> V0) from the DC power supply 103a. Is applied. In the reaction chamber 601.2, counter electrodes 102 (E−) are arranged on the cold fusion surface (Mf) side of the hydrogen storage metal substrate M by a predetermined distance g2, and a constant negative voltage V— ( <V0) is applied.

In this way, the counter electrode 102 (E +) for storing D and the counter electrode 102 (E−) for cold fusion are arranged on both sides of the hydrogen storage metal substrate M at predetermined distances g1 and g2, respectively. .. However, in order to compactly arrange a large number of hydrogen storage metal substrates M in the reactor 601 as in Examples described later, the counter electrodes 102 (E +) and 102 (E−) are placed from the hydrogen storage metal substrate M, etc. The counter electrode 102 (E +) or counter electrode 102 (E−) arranged at a distance (g1 = g2) and adjacent hydrogen storage metal substrates M are arranged between them is shared for D storage or room temperature nuclear fusion. It is desirable to do. Further, according to the present embodiment, since the potentials of the counter electrodes 102 (E +) and 102 (E−) are fixed to the positive potential and the negative potential, respectively, the DC power supply 103a can be used, and the first to third embodiments can be used. It is not necessary to switch between the positive potential and the negative potential unlike the polarity switchable power supply 103 of the form.

_{D 2} O electrolyte from the supply port 602.1 as described above is supplied to the reaction chamber 601.1, _D 2 O between the D-absorbing surface Md and the counter electrode 102 of the hydrogen storage metal substrate M (E +) The flow F2 of the electrolytic solution is formed. _{Further, the D 2} gas and the O ₂ gas after hydrogen storage in the reaction chamber 601.1 recombine and return to D ₂ O (D ₂ + 1 / 2O ₂ → D ₂ O). The reaction chamber 601.2 _{H 2} O cooling liquid is supplied from the supply port 602.2, _{H 2} O coolant between the cold fusion surface Mf and the counter electrode 102 of the hydrogen storage metal substrate M (E-) Flow F4 is formed. The H _{2 O} vapor vaporized by heat generated by the cold fusion in the reaction chamber 601.2 is discharged from the discharge port 603.1 is utilized downstream of the generator. Further, the hot H ₂ O is discharged from the discharge port 603.2. _{In this way, the D 2} O electrolytic solution flows from the lower side to the upper side between the D storage surface Md of the hydrogen storage metal substrate M and the counter electrode 102 (E +), so that a sufficient amount of D is efficiently stored. As will be described later, D diffused in the hydrogen storage metal substrate M can cause a stable and continuous fusion reaction on the cold fusion surface Mf. Further, since the reaction chambers of the D occlusion and the cold fusion are separated and the respective exhaust gases are discharged from the separate discharge ports 603.1 and 603.2, the safety can be enhanced.

As the hydrogen storage metal substrate M, for example, a nickel (Ni) porous body called Celmet (registered trademark) manufactured by Toyama Sumitomo Electric Co., Ltd. can be used. Porous body of the hydrogen-absorbing metal machining is D _{2 O} deep well is easy because it is possible to hydrogen supply penetration, are suitable for hydrogen storage metal substrate M in the present embodiment. For example, if the thickness of the hydrogen storage metal substrate M is formed to be about 1 mm, the hydrogen stored on the D storage surface Md side of the hydrogen storage metal substrate M diffuses in the porous metal and becomes the room temperature fusion surface Mf on the opposite side. When it reaches, normal temperature fusion becomes possible. At that time, a large amount of hydrogen reached by diffusion expels He generated by nuclear fusion to the outside, so that a continuous nuclear fusion reaction becomes possible. The mechanism of He eviction and continuous fusion reaction will be described below.

4.2) He Expulsion and Continuous Fusion Reaction First, as shown in FIG. 53, palladium Pd is taken as an example as a hydrogen storage metal, and the sizes of hydrogen, hydrogen ions, and helium are schematically described. Needless to say, the size ratios on these drawings are for the purpose of explaining the fusion reaction, and do not represent the actual ratios as they are.

Further, as schematically shown in FIG. 54, the T-site having a side of about 2.75 Å is represented by an equilateral triangle (A), and the state in which the surface metal atom of the T-site is displaced and the T-site is expanded is expanded. It shall be expressed as an equilateral triangle (B). Regarding the expansion of T-sites, as described in Section 2.3, about one-third of the deuterium occluded in Pd nanoparticles occupies the T-sites, and the surface T-sites are easily stress-relaxed and their positions shift. It is known (Reference 3).

As schematically shown in FIG. 55, it is assumed that a nuclear fusion reaction occurs at the T site and helium is produced. The D stored on the D storage surface Md side of the hydrogen storage metal substrate M sequentially tunnels and diffuses the O site and the T site in the substrate, and continues to be supplied to the cold fusion surface Mf side. In this way, D tunnels from the O site to the surface T site where He exists ((1) in FIG. 55).

Hydrogen is usually a molecule rather than an atomic state, and it is thought that hydrogen exhibits high quantumness when it exists stably at a high density in the atomic state. In hydrogen storage metals such as Pd, hydrogen can exist in the atomic state between the lattices of Pd ("Study of PdHx system by thermal conductivity measurement" Ryota Nakatsuji (Graduate School of Frontier Sciences, University of Tokyo) Basic Science Research Department of Systems and Materials; 2007 Master's Thesis). Since hydrogen can be both positive and negative ions and has high quantum properties, the following process can be considered when interpreted in terms of quantum mechanics. First, O-site. When the neutral D ^{0 in the} inside is tunneled into the T site, it is tunneled as a cation D ^{+. Since} the He of the T site is neutral, the cation D ⁺ receives an electron from the metal in an electronegative manner and is negative. It becomes ion D ⁻ , which increases the size considerably as shown in FIG. 54, and the He is expelled from the T site by expanding the T site where He is present ((2) in FIG. 55).

^{D 0} is ^{tunneled as D +} from the O site to the T site where He is expelled and ^{expanded by D −} ((3) in FIG. 55). Expanded T sites D ^- and ^{D +} and that is confined, as described in Section Section A2.6 ~ A2.9 (FIGS. 13 to 19), D in the T site ^- and ^{D +} and is covalently bonded to be D ₂ molecules ((4) in FIG. 55), the femto D ₂ molecules reduced under compressive stress from the metal grid is formed, the fusion reaction occurs (in FIG. 55 (5)). When He generated by fusion remains at the T site ((6) in FIG. 55), returning to (1) described above, D tunnels from the O site to the surface T site and enters. The following steps (1) to (6) are repeated, and reactions occur continuously in the order of supply of D, expulsion of He, and occurrence of nuclear fusion.

4.3) phenomenon shown problems Figure 55 of a conventional _{D 2} O-based cold nuclear fusion reactor, as described in detail in Section A3.3 (misunderstanding cold fusion generation mechanism based on FPE), the FPE It is considered that it also occurs in cold fusion based on. However, in a cold fusion reactor based on FPE, since an electric field is generated from the anode to the cathode, free electrons are present on the metal surface of the cathode, thereby shielding the Coulomb attraction. For this reason, fusion can only be triggered at very high temperatures and the autonomous mode cannot be sustained.

Further, in a cold fusion reactor based on FPE, the supply amount of D to the surface of the cathode metal utilizes the phenomenon that D is occluded in the bulk from the surface and the stored D is diffused to the surface. Becomes difficult to maximize. Further, when RF voltage is applied to perform D occlusion from the surface, the He concentration on the metal surface becomes high, so that the D occlusion efficiency decreases.

On the other hand, according to the present embodiment, D is stored on the back surface (D storage surface Md) of the hydrogen storage metal substrate M, and the stored D is supplied to the front side (cold fusion surface Mf) by diffusion. As a result, cold fusion and He eviction at the surface T-site are smoothly repeated, and the long-term fusion reaction can be continued in the autonomous mode.

Further, the cold fusion reactor according to the present embodiment is different from the conventional cold fusion reactor composed of a Pd cathode and a linear Pt anode, and has flat counter electrodes on both sides of a flat hydrogen storage metal substrate. Has a configuration provided with. By applying a positive voltage for D storage to one counter electrode and a negative voltage for cold fusion to the other counter electrode, D was occluded and stored on one surface of the hydrogen storage metal substrate. D is supplied to the other surface by diffusion, which allows the fusion reaction to occur continuously on the other surface, and the D supply amount can be easily maximized.

Hereinafter, an example of a cold fusion device to which this embodiment is applied will be described. The mechanism of D storage and cold fusion by the potential of the counter electrode and the heating of the hydrogen storage metal are as described in the first to third embodiments, and thus the description thereof will be omitted.

<Example 4.1>
As illustrated in FIG. 56, according to Example 4.1 of the present invention, the following arrangement method is adopted in order to compactly arrange as many hydrogen storage metal substrates M as possible in the reactor 601. Is desirable. That is, the counter electrodes 102 (E +) and 102 (E−) are arranged at equal distances (g1 = g2) on both sides of the hydrogen storage metal substrate M, and the adjacent hydrogen storage metal substrates M are arranged between them. The electrode 102 (E +) or counter electrode 102 (E−) is shared for D storage or room temperature nuclear fusion. In other words, hydrogen storage metal substrates M (i) and M (i + 1) are arranged at equal distances on both sides of the arbitrary electrode 102, and if the arbitrary counter electrode 102 is the counter electrode 102 (E +), hydrogen storage is performed. The surfaces of the metal substrates M (i) and M (i + 1) facing each other are on the D storage side, and if the counter electrode 102 (E−) is used, the hydrogen storage metal substrates M (i) and M (i + 1) face each other. The surface is the normal temperature nuclear fusion side.

A reaction chamber 601.1 in which the counter electrode 102 (E +) is arranged and a reaction chamber 601.2 in which the counter electrode 102 (E−) is arranged are alternately provided in the reaction furnace 601, and their reactions are performed. A hydrogen storage metal substrate M is provided so as to partition the chamber. As illustrated in FIGS. 56 and 57 (A), the D ₂ O electrolytic solution is supplied to each reaction chamber 601.1 from the supply port 602.1, and the D 2 O electrolyte is supplied to each reaction chamber 601.1 with the D storage surface Md of the corresponding hydrogen storage metal substrate M. _{A flow of D 2} O electrolytic solution is formed between the counter electrode 102 (E +). _{Further, the D 2} gas and the O ₂ gas after hydrogen storage in each reaction chamber 601.1 are recombined as described above _{and returned to D 2} O (D ₂ + 1 / 2O ₂ → D ₂ O).

As illustrated in FIGS. 56 and 57 (B), H ₂ O coolant is supplied to each reaction chamber 601.2 from the supply port 602.2, and the cold fusion surface Mf of the corresponding hydrogen storage metal substrate M is supplied. flow of _{H 2} O coolant is formed between the counter electrode 102 and the (E-). The H _{2 O} vapor vaporized by heat generated by the cold fusion in the reaction chamber 601.2 is discharged from the discharge port 603.1 is utilized downstream of the generator. Further, the hot H ₂ O is discharged from a discharge port 603.2 (not shown). D The occlusion and cold fusion reaction chambers are separated, and the respective exhaust gases are discharged from separate outlets 603.1 and 603.3, respectively, so that safety can be enhanced.

Each hydrogen storage metal substrate M is fixedly held by a wafer holding portion that also serves as a heating means, as in the structure shown in FIG. 52. The specific configuration of the hydrogen storage metal substrate M will be described in Examples 4.2 to 4.4 below.

Since the potentials of the counter electrodes 102 (E +) and 102 (E-) are fixed to the positive potential and the negative potential, respectively, a DC power supply 103a is used as the power source, and the positive voltage V +, the negative voltage V-, and the ground potential V0 are used, respectively. It may be applied to the counter electrode 102 (E +), the counter electrode 102 (E−), and the hydrogen storage metal substrate M.

With this configuration, D is efficiently occluded from the D ₂ O electrolytic solution on the first surface of the hydrogen storage metal substrate M facing the counter electrode 102 (E +) in each reaction chamber 601.1, and is occluded. D diffuses in the hydrogen storage metal substrate M, and a nuclear fusion reaction occurs due to D diffused on the second surface of the hydrogen storage metal substrate M facing the counter electrode 102 (E +) in the adjacent reaction chamber 601.2. do. In this embodiment, a large number of hydrogen storage metal substrates M and counter electrodes 102 (E +) and 102 (E−) can be compactly arranged in the reactor 601 to achieve extremely efficient and continuous cold fusion. It is possible to cause a reaction.

Further, the reaction chambers for D occlusion and cold fusion are separated, and in the reaction chamber 601.1, the D ₂ gas and O ₂ gas after D occlusion recombine and return to D ₂ O, and H _{2 after cold fusion.} O Steam and hot cooling water are discharged from separate outlets 603.1 and 603.3, respectively, so that safety can be enhanced. Separation of the reaction chambers 601.1 and 601.2 by the hydrogen storage metal substrate M can be realized as shown in FIG. 58, for example.

As illustrated in FIG. 58, the hydrogen storage metal substrate M is fixed between the reaction chambers 601.1 and 601.2 by a plurality of holding portions 604. That is, the end of the hydrogen storage metal substrate M is sandwiched between the recesses of each holding portion 604, and the hydrogen storage metal substrate M is pressed and securely held by tightening the screw 604a, and the liquid (D ₂ O) in the adjacent reaction chamber is held. And H ₂ O) are surely separated.

<Example 4.2>
As illustrated in FIG. 59, according to Example 4.2 of the present invention, the hydrogen storage metal substrate M in the cold fusion device shown in FIG. 52 uses nickel (Ni) as the hydrogen storage metal, and the nickel plate 1000 is It has a configuration held by a holding frame 1001. Here, the thickness of the nickel plate 1000 is set to about 1 mm, and the holding frame 1001 is fixed to the back side (D storage surface Md) of the nickel plate 1000 to mechanically hold the nickel plate 1000. The holding frame 1001 is made of platinum Pt-plated copper Cu.

The above-mentioned D ₂ O electrolytic solution is supplied from the back side of the D storage surface (holding frame 1001 side) of the nickel plate 1000, and the occluded D is diffused to the front side (cold fusion surface Mf) of the nickel plate 1000 to surface. A fusion reaction occurs at the T site of. By holding the nickel plate 1000 with the holding frame 1001, the area of the nickel plate 1000 can be increased, and a sufficient D supply can be achieved. In order to shorten the time it takes for D occluded on the back surface of the nickel plate 1000 to reach the front surface, it is necessary to reduce the thickness of the nickel plate 1000, but on the other hand, the mechanical strength of the nickel plate 1000 Will be difficult to obtain. In particular, the nickel plate 1000 is known to be fragile due to hydrogen storage and cold fusion, and holding by the holding frame 1001 is indispensable for thinning the nickel plate 1000. The thickness of the nickel plate 1000 needs to be determined in consideration of both the surface arrival time of D and the mechanical strength. In this embodiment, the thickness is approximately 1 mm.

Further, as the

nickel plate

1000, 14 cm × 14 cm (inscribed square of 6 inch φ) can be used as long as it is a metal plate having a nanostructure, but generally it is 100 cm × 100 cm, or up to 5 m in width and 20 m in length. It is also possible with the size of. Therefore, by combining a plurality of modules of 1 m × 1 m, it is possible to manufacture up to the same size as the current nuclear reactor.

As described in FIG. 52 above, He generated at the surface T site of the nickel plate 1000 is eliminated by D supplied from the back side, so cold fusion is continuously performed using the nickel plate 1000 having a large area. It becomes possible to generate a reaction, and a large calorific value can be obtained.

<Example 4.3>
As illustrated in FIG. 60, according to Example 4.3 of the present invention, the hydrogen storage metal substrate M in the cold fusion apparatus shown in FIG. 52 holds a nickel (Ni) plate 1000 having a thickness of d1 and a nickel (Ni) plate 1000 thereof. It is composed of a holding frame 1001b having a thickness d2. The holding frame 1001b forms an array of a plurality of tapered openings Oexpc in a holding material layer having a thickness of 6 mm, and exposes the nickel surface of the nickel plate 1000. Each tapered opening Oexp-c has an inverted truncated cone shape with a narrow bottom surface and a wide top surface, and the bottom surface is a nickel exposed surface, which is the D storage surface Md described above. The exposed nickel surface on the bottom surface of each tapered opening Oexp-c has a diameter of d3, and the distance between adjacent nickel exposed surfaces is d4. In other words, circular nickel exposed surfaces having a diameter of d3 are arranged in a grid pattern at intervals of a distance d4 on all sides.

As described above, the hydrogen storage metal has the property that the electrical resistivity increases and the mechanical strength also decreases as the hydrogen concentration increases. Therefore, as described later, the thickness d1 of the nickel plate 1000 and the exposed nickel surface It is desirable that the diameter d3 and the distance d4 between the exposed nickel surfaces are set to predetermined ratios in order to ensure the potential controllability and mechanical strength of the nickel plate 1000. In this embodiment, the thickness of the nickel plate 1000 is d1 = 2 mm, the depth of the tapered opening Oexp-c is d2 = 6 mm, the diameter of the exposed nickel surface is d3 = 2 mm, and the distance between the exposed nickel surfaces is d4 = 5 mm.

<Example 4.4>
The tapered opening Oexp-c in Example 4.3 described above had an inverted truncated cone shape, but this embodiment is not limited to this shape, and the nickel exposed surface is a D storage of the nickel plate 1000. It suffices if it is uniformly dispersed on the side of the surface Md. Hereinafter, as Example 4.4, another shape of the tapered opening Oexp will be illustrated.

As illustrated in FIG. 61, according to Example 4.4 of the present invention, the hydrogen storage metal substrate M in the cold fusion apparatus shown in FIG. 52 holds a nickel (Ni) plate 1000 having a thickness of d1 and a nickel (Ni) plate 1000 thereof. It is composed of a holding frame 1001c having a thickness d2. The holding frame 1001c forms an array of a plurality of tapered openings Oexp-s in a holding material layer having a thickness of 6 mm to expose the nickel surface of the nickel plate 1000. Each tapered opening Oexp-s has an inverted quadrangular pyramid shape with a narrow bottom surface and a wide top surface, and the bottom surface is a nickel exposed surface, which is the D storage surface Md described above. The nickel exposed surface which is the bottom surface of each tapered opening Oexp-s is a square having a side of d3, and the distance between adjacent nickel exposed surfaces is d4. In other words, square nickel exposed surfaces having a side d3 are arranged in a grid pattern at intervals of a distance d4 on all sides.

As described above, the hydrogen storage metal has the property that the electrical resistivity increases and the mechanical strength also decreases as the hydrogen concentration increases. Therefore, as described later, the thickness d1 of the nickel plate 1000 and the exposed nickel surface It is desirable that the diameter d3 and the distance d4 between the exposed nickel surfaces are set to predetermined ratios in order to ensure the potential controllability and mechanical strength of the nickel plate 1000. In this embodiment, the thickness of the nickel plate 1000 is d1 = 2 mm, the depth of the tapered opening Oexp-s is d2 = 6 mm, one side of the nickel exposed surface is d3 = 2 mm, and the distance between the nickel exposed surfaces is d4 = 5 mm.

<Structure of holding frame>
The holding frames 1001b and 1001c in Examples 4.3 and 4.4 can be formed by patterning a holding frame material (metal, ceramic, etc.) on the nickel plate 1000. In the above embodiment using copper Cu as a holding frame materials, precious metal (here, Pt) such Cu is not dissolved into D 2 _O electrolyte is plated. Regarding the configurations of the holding frames 1001b and 1001c, it is desirable to use metal as a material and form the holding frames 1001b and 1001c in the following dimensional ratios in order to ensure the potential controllability of the nickel plate 1000. Hereinafter, the inverted cone-shaped opening Oexp-c or the inverted quadrangular cone-shaped opening Oexp-s will be collectively referred to as "tapered opening Oexp".

As illustrated in FIG. 62, the thickness of the nickel plate 1000 is d1, the diameter / side length of the nickel exposed surface which is the bottom surface of each tapered opening Oexp is d3, and the distance between adjacent nickel exposed surfaces is d4. , It is assumed that d1 = d3 for the sake of simplicity. That is, it is assumed that each tapered opening Oexp is formed so that the thickness of the nickel plate 1000 and the diameter of the exposed nickel surface / the length of one side match. As described above, the positive potential counter electrode 102 (E +) is provided so as to face the D storage surface Md of the nickel plate 1000 (that is, on the holding frame 1001b / c side), and the D ₂ O electrolytic solution is placed between them. It flows. As a result, D is occluded on the nickel exposed surface of the tapered opening Oexp and diffuses in the nickel plate 1000 from the nickel exposed surface in the vertical direction (direction orthogonal to the surface) and the horizontal direction (plane direction). Therefore, when D diffused in the vertical direction reaches the cold fusion surface Mf, D diffuses in the horizontal direction by the same distance, and a high concentration D region (Ni−) is present in the vicinity of the tapered opening Oexp in the nickel plate 1000. D) 1000d is diffusely formed. That is, D diffused in the lateral direction extends below the holding frame 1001b / c by d1 from the edge of the nickel exposed surface.

As described above, since the electrical resistivity of the high concentration D region 1000d is high, in order to ensure the potential controllability of the nickel plate 1000, the low resistance portion of the nickel metal is substantially placed between the adjacent high concentration D regions 1000d. That is, it is necessary that the adjacent high-concentration D region 1000d does not come into contact with each other. The thickness d1 (= d3) of the nickel plate 1000 and the distance d4 of the exposed nickel surfaces are set so as to satisfy this condition. That is, in Examples 4.3 and 4.4, the nickel exposed surface spacing d4 diffuses a high-concentration D region 1000d of d1 or more from both edges, so that at least d4> 2 × d1 is satisfied when d1 = d3. And, it is set so as to secure the mechanical strength of the holding frame 1001b / c.

FIG. 63 is a plan view schematically showing the spread of the high concentration D region 1000d in the case of Example 4.3. In this way, a portion where D is not diffused remains between the adjacent high-concentration D regions 1000d, and the potential controllability of the nickel plate 1000 is ensured. Further, since the nickel portion is hard to be brittle, the mechanical strength of the nickel plate 1000 can be maintained. Similarly, in Example 4.4, the high-concentration D region is diffusely formed from the edge of the square nickel exposed surface, so that the same effect is obtained.

Since the metal portion having a low electric resistance value remains on the metal plate (nickel plate 1000) of the hydrogen storage metal substrate M in this way, the potential controllability of the hydrogen storage metal substrate M can be maintained at a sufficient level, and the metal can be further maintained. It is also possible to maintain the mechanical strength of the plate. The holding frame 1001b / c can also be formed of a material other than metal such as ceramic.

5. Fifth Embodiment According to the fifth embodiment of the present invention, two reaction chambers are provided in the reaction furnace, these reaction chambers are separated by a hydrogen storage metal substrate, and one reaction is carried out as in the fourth embodiment. By arranging a positive potential counter electrode in the chamber and a negative potential counter electrode in the other reaction chamber, one reaction chamber side of the hydrogen storage metal substrate is the hydrogen storage stage and the other reaction chamber side is cold fusion. It can be a fusion stage and these can be spatially separated. However, it differs from the fourth embodiment in the following points.

According to this embodiment _{, D 2} gas is used for D storage instead of the _{D 2} O electrolytic solution, and the hydrogen storage metal substrate is provided on a metal substrate having a property of storing and diffusing hydrogen and its hydrogen storage surface. It is composed of the hydrogen separation membrane obtained. As described above, D in the electrolysis using 2 _O electrolyte it is necessary to apply a high voltage in order to increase the absorption amount, the region where the insulating film growth at a high electric field is not current flows going to the There was a problem that occurred. In this embodiment, such a problem is solved by using _{D 2 gas for D occlusion.}

As the hydrogen storage metal, nickel (Ni) similar to that in the fourth embodiment can be used. The hydrogen separation membrane will be described in detail later. Hereinafter, a cold fusion device using such a hydrogen storage metal substrate will be described.

As schematically shown in FIG. 64, reaction chambers 601.1 and 601.2 are provided in the reaction furnace 601 and these reaction chambers are separated by a hydrogen storage metal substrate Mc. As will be described later, the hydrogen storage metal substrate Mc has a configuration in which a hydrogen separation membrane is formed on the hydrogen storage metal substrate, but in FIG. 64, the metal substrate and the hydrogen separation membrane are formed so that the characteristic configuration becomes clear. Has been expanded and, needless to say, does not reflect the actual thickness ratio.

The hydrogen storage metal substrate Mc is fixedly held by the holding portion 604 that also serves as a heating means, and the ground potential V0 is applied from the DC power supply 103a. In the reaction chamber 601.1, the counter electrodes 102 (E +) are arranged on the hydrogen separation membrane side of the hydrogen storage metal substrate Mc at a predetermined distance g1, and a constant positive voltage V + (> V0) is applied from the DC power supply 103a. NS. In the reaction chamber 601.2, counter electrodes 102 (E−) are arranged on the cold fusion surface (Mf) side of the hydrogen storage metal substrate Mc at a predetermined distance g2, and a constant negative voltage V— ( <V0) is applied. The configuration of the hydrogen storage metal substrate Mc will be described later.

The counter electrode 102 (E +) for D storage and the counter electrode 102 (E−) for room temperature nuclear fusion are arranged on both sides of the hydrogen storage metal substrate Mc at predetermined distances g1 and g2, respectively. 4 As described in the embodiment, in order to compactly arrange a large number of hydrogen storage metal substrates Mc in the reaction furnace 601, the counter electrodes 102 (E +) and 102 (E−) are arranged from the hydrogen storage metal substrate M and the like. The counter electrode 102 (E +) or counter electrode 102 (E−) arranged at a distance (g1 = g2) and adjacent hydrogen storage metal substrates Mc are arranged between them is shared for D storage or room temperature nuclear fusion. It is desirable to do. Further, as for the DC power supply 103a, as described in the fourth embodiment, the hydrogen storage metal substrate Mc is set to the reference voltage V0, and the counter electrodes 102 (E +) and 102 (E−) have constant positive voltages V + and 102 (E−), respectively. It is only necessary to apply a negative voltage V−, and it is not necessary to switch the polarity.

The reaction chamber 601.1 _{D 2} gas is supplied from the supply port 602.1A, flow F2 of _{D 2} gas formed between the hydrogen storage metal substrate Mc of D-absorbing-side surface and the opposite electrode 102 (E +) Will be done. _{Further, the D 2} gas after hydrogen storage in the reaction chamber 601.1 is discharged from the discharge port 603.3a. The reaction chamber 601.2 _{H 2} O cooling liquid is supplied from the supply port 602.2, _{H 2} O coolant between the cold fusion surface Mf and the counter electrode 102 of the hydrogen storage metal substrate M (E-) Flow F4 is formed. The H _{2 O} vapor vaporized by heat generated by the cold fusion in the reaction chamber 601.2 is discharged from the discharge port 603.1 is utilized downstream of the generator. Further, the high temperature H ₂ O is discharged from the discharge port 603.2.

_{In this way, the D 2} gas flows from the bottom to the top between the surface of the hydrogen storage metal substrate Mc on the hydrogen separation film side and the counter electrode 102 (E +), and D is stored in the hydrogen storage metal through the hydrogen separation film described later. By doing so, a sufficient amount of D can be efficiently occluded. The occluded D can diffuse in the hydrogen storage metal and generate a stable and continuous fusion reaction on the cold fusion surface Mf. Further, since the reaction chambers of the D occlusion and the cold fusion are separated and the respective exhaust gases are discharged from the separate discharge ports 603.1 and 603.3a, the safety can be enhanced.

<Hydrogen separation membrane>
As schematically shown in FIG. 65, the hydrogen storage metal substrate Mc is a metal having a property of storing and diffusing hydrogen (hereinafter referred to as nickel substrate 1000a) and a hydrogen separation film formed on the D storage surface Md thereof. It is composed of 1002 and 1002. The hydrogen separation membrane 1002 has a hole pattern 1002d in which a large number of nano-level through holes are arranged in an array by a production method described later, and thereby functions as a separation membrane having hydrogen permeation performance. _{That is, by flowing D 2} gas between the hydrogen separation membrane 1002 and the counter electrode 102 (E +), D is occluded in the nickel plate from the D occlusal surface Md of the nickel substrate 1000a through the hydrogen separation membrane 1002. An example of a method for producing such a hydrogen separation membrane 1002 using semiconductor microfabrication technology is "Membrane Separation Technology for Hydrogen Utilization" by Katsumi Kusakabe (Review Article: Membrane (MEMBRANE), Vol.30. It is described in No. 1, (2005) pp. 2-6).

As illustrated in FIG. 66, a defect-free nickel layer having a predetermined thickness is formed on the substrate 1003 for forming the hydrogen separation film 1002 by an electrolytic method or a sputtering method, and this nickel layer is designated as a nickel substrate 1000a. (Fig. 66 (A)).

Subsequently, a mask 1004 for forming the hole pattern 1002d on the substrate 1003 is formed by nanoimprint lithography or the like (FIG. 66 (B)), and nanoholes are formed by etching through the mask 1004 (FIG. 66 (C)). By removing the mask 1004 from the etched substrate 1003a thus obtained, a hydrogen separation film 1002 made of the substrate 1003a is formed on the nickel substrate 1000a (FIG. 66 (D)).

A defect-free nickel layer can be easily coated on the smooth substrate 1003 by an electrolytic method or a sputtering method, and then fine holes (nanoholes) are formed in the substrate 1003 by etching to make the substrate 1003 porous. The hydrogen separation membrane 1002 can be formed. In this embodiment, a hole pattern 1002d having a diameter of about 500 nm is formed. The distance between the nanoholes is set to about 10 times the diameter of the nanoholes, for example, about 1 to 5 μm.

<Action and effect>
Next, the operation of the cold fusion device according to the present embodiment will be described with reference to FIGS. 64 and 65.

_{The D 2} gas supplied to the reaction chamber 601.1 from the supply port 602.1a flows between the hydrogen separation membrane 1002 of the hydrogen storage metal substrate Mc and the counter electrode 102 (E +), and passes through the hydrogen separation membrane 1002. D reaches the D storage surface Md of the nickel substrate 1000a, where it is occluded in the nickel substrate 1000a. Since D _{storage is performed using D 2} gas, an insulating film is not formed on the surface of the hydrogen storage metal substrate M even if a high voltage is applied to the counter electrode 102 (E +). As described above, the occluded D sequentially tunnels and diffuses the O-site and the T-site in the nickel substrate 1000a, and continues to be supplied to the cold fusion surface Mf side. Thus, by the cycle shown in FIG. 48, cold fusion and He eviction at the surface T site of the nickel plate 1000a are repeated, and the long-term fusion reaction can be continued in the self-sustaining mode. Further, the D occlusion and the cold fusion reaction chambers 601.1 and 601.2 are separated, and the respective gases are discharged from the separate discharge ports 603.3a and 603.1, so that the safety can be improved. can.

Claims

In the reaction furnace, a hydrogen storage metal substrate made of a metal that stores heavy hydrogen, a flat plate-shaped counter electrode provided facing the hydrogen storage metal substrate and for controlling the surface potential of the hydrogen storage metal substrate, Is provided,
If it is a counter electrode to which a positive voltage is applied with reference to the hydrogen storage metal substrate, hydrogen storage occurs in which heavy hydrogen moves into the hydrogen storage metal substrate, and if it is a counter electrode to which a negative voltage is applied, the hydrogen A cold fusion device characterized in that cold fusion occurs due to heavy hydrogen diffused from the inside of the storage metal substrate to the surface.
The first aspect of claim 1, wherein hydrogen storage and cold fusion occur alternately in time by switching the counter electrode between a positive voltage and a negative voltage with respect to the hydrogen storage metal substrate. Cold fusion device.
The deuterium oxide between the counter electrode and the hydrogen absorbing metal substrate (D 2 O) supply port for forming a flow of the electrolyte is provided in the reactor, the direction of the surface the flow of the hydrogen-absorbing metal substrate The cold fusion device according to claim 1 or 2, wherein the heating element has a nanostructure extending from the above.
The first reaction chamber and the second reaction chamber provided in the reaction furnace are spatially separated by the hydrogen storage metal substrate, and the flat plate facing the first surface of the hydrogen storage metal substrate in the first reaction chamber. A first counter electrode shaped like a plate is provided, and a flat plate-shaped second counter electrode facing the second surface of the hydrogen storage metal substrate is provided in the second reaction chamber.
By applying a positive voltage to the first counter electrode and a negative voltage to the second counter electrode, hydrogen storage is performed on the first surface of the hydrogen storage metal substrate, and cold fusion is performed on the second surface. The cold fusion device according to claim 1, wherein the fusion device is caused.
The room temperature nucleus according to claim 4, wherein the hydrogen storage metal substrate is made of a metal having a property that deuterium stored on the first surface is diffused to the second surface through the hydrogen storage metal substrate. Fusion device.
Deuterium oxide (D 2 O) electrolyte between the second surface of the hydrogen absorbing metal substrate and between the second counter electrode of the first surface of the hydrogen absorbing metal substrate and the first counter electrode The cold fusion apparatus according to claim 4 or 5, wherein supply ports for forming the respective flows are provided in the reactor.
A first supply port for forming a flow of deuterium oxide (D 2 O) electrolyte between the first surface of the hydrogen absorbing metal substrate and the first counter electrode, the hydrogen absorbing and the second counter electrode The cold fusion apparatus according to claim 4 or 5, wherein a second supply port for forming a flow of cooling water with the second surface of the metal substrate is provided in the reaction furnace.
According to claim 4-7, a holding frame is provided on the first surface of the hydrogen storage metal substrate, and openings in which the metal on the first surface is exposed are arranged in the holding frame. The cold fusion device according to any one of the items.
The cold fusion device according to claim 5, wherein the hydrogen storage metal substrate has a hydrogen separation membrane on the first surface side for selectively permeating deuterium.
A first supply port for forming a flow of deuterium (D 2 ) gas between the first counter electrode and the first surface of the hydrogen storage metal substrate is provided in the first reaction chamber, and the second facing is provided. According to claim 4, 5 or 9, a second supply port for forming a flow of cooling water between the electrode and the second surface of the hydrogen storage metal substrate is provided in the second reaction chamber. The described cold fusion device.
In the reaction furnace, a hydrogen storage metal substrate made of a metal that stores heavy hydrogen, a flat plate-shaped counter electrode provided facing the hydrogen storage metal substrate and for controlling the surface potential of the hydrogen storage metal substrate, Is provided,
By applying a positive voltage with the hydrogen storage metal substrate as a reference potential to the counter electrode, hydrogen storage in which heavy hydrogen moves into the hydrogen storage metal substrate is generated.
By applying a negative voltage with the hydrogen storage metal substrate as a reference potential to the counter electrode, cold fusion is caused by deuterium diffused from the inside to the surface of the hydrogen storage metal substrate to generate heat. ,
A heat generation method characterized by that.
In the reaction furnace, a hydrogen storage metal substrate made of a metal that stores heavy hydrogen, a flat plate-shaped counter electrode provided facing the hydrogen storage metal substrate and for controlling the surface potential of the hydrogen storage metal substrate, If the counter electrode has a positive potential, hydrogen storage occurs in which heavy hydrogen moves into the hydrogen storage metal substrate, and if the counter electrode has a negative potential, the hydrogen is stored. A heat generating device in which an excessive exothermic reaction occurs due to heavy hydrogen diffused from the inside to the surface of the storage metal substrate.
By switching the counter electrode between a positive voltage and a negative voltage with respect to the hydrogen storage metal substrate, hydrogen storage and an excessive exothermic reaction occur alternately in time.
The deuterium oxide between the counter electrode and the hydrogen absorbing metal substrate (D 2 O) supply port for forming a flow of the electrolyte is provided in the reactor, the direction of the surface the flow of the hydrogen-absorbing metal substrate A heat generating device characterized in that it is composed of a heating element having a nanostructure extending to.
A first reaction chamber and a second reaction chamber are provided in the reaction furnace, and a hydrogen storage metal substrate made of a metal that stores deuterium spatially separates the first reaction chamber and the second reaction chamber.
The first reaction chamber is provided with a flat plate-shaped first counter electrode facing the first surface of the hydrogen storage metal substrate, and the second reaction chamber is provided with a flat plate-shaped first facing electrode of the hydrogen storage metal substrate. 2 counter electrodes are provided
Wherein the first feed port to form a flow of deuterium oxide (D 2 O) electrolyte or deuterium (D 2) gas between the first surface of the hydrogen absorbing metal substrate and the first counter electrode first A second supply port provided in one reaction chamber and forming a flow of cooling water between the second counter electrode and the second surface of the hydrogen storage metal substrate is provided in the second reaction chamber.
By applying a positive voltage to the first counter electrode and a negative voltage to the second counter electrode, hydrogen storage occurs on the first surface of the hydrogen storage metal substrate, and the hydrogen storage occurs on the second surface. A heating device characterized in that an excessive exothermic reaction is caused by heavy hydrogen diffused from the inside to the surface of a metal substrate.
The heat generating device according to claim 13, wherein the hydrogen storage metal substrate is made of a metal having a property that deuterium stored on the first surface is diffused to the second surface through the hydrogen storage metal substrate. ..
The heat generating device according to claim 13 or 14, wherein the hydrogen storage metal substrate has a hydrogen separation membrane on the first surface side for selectively permeating deuterium.