WO2021196016A1

WO2021196016A1 - Capacitor, capacitor structure, and method for fabricating capacitor

Info

Publication number: WO2021196016A1
Application number: PCT/CN2020/082571
Authority: WO
Inventors: 陆斌; 沈健
Original assignee: 深圳市汇顶科技股份有限公司
Priority date: 2020-03-31
Filing date: 2020-03-31
Publication date: 2021-10-07
Also published as: CN113748508A

Abstract

A capacitor, a capacitor structure, and a method for fabricating the capacitor, which is able to prepare a capacitor that has a small volume and a high capacitance value density. The capacitor comprises: a laminated structure (120), comprising at least one dielectric layer (23) and multiple conductive layers (21/22), wherein the at least one dielectric layer (23) and the multiple conductive layers (21/22) form a structure in which the conductive layers and dielectric layers alternate with each other; at least one first external electrode (130) and at least one second external electrode (140), which are located above the laminated structure (120); and at least one third external electrode (150) and at least one fourth external electrode (160), which are located below the laminated structure (120), wherein the first external electrode (130) and the third external electrode (150) are electrically connected to part or all of odd-numbered conductive layers among the multiple conductive layers, and the second external electrode (140) and the fourth external electrode (160) are electrically connected to part or all of even-numbered conductive layers among the multiple conductive layers.

Description

Capacitor, capacitor structure, capacitor manufacturing method

Technical field

This application relates to the field of capacitors, and more specifically, to a capacitor, a capacitor structure, and a manufacturing method of the capacitor.

Background technique

Capacitors can play the role of bypassing, filtering, decoupling, etc. in the circuit, and are an indispensable part of ensuring the normal operation of the circuit. With the continuous development of modern electronic systems to multi-function, high integration, low power consumption, and miniaturization, traditional Multi-layer Ceramic Capacitors (MLCC) have been unable to meet the increasingly demanding applications of small size and high capacity. Demand. How to prepare small-volume, high-capacity capacitors has become an urgent technical problem to be solved.

Summary of the invention

The present application provides a capacitor, a capacitor structure, and a method for manufacturing a capacitor. A plurality of electrodes of the capacitor are arranged on the front and back sides of the capacitor, and a small-volume, high-capacitance-density double-sided capacitor can be prepared based on a multi-wing structure.

In the first aspect, a capacitor is provided, including:

A laminated structure, the laminated structure comprising at least one dielectric layer and a plurality of conductive layers, the at least one dielectric layer and the multilayer conductive layer form a structure in which the conductive layer and the dielectric layer alternate with each other;

At least one first external electrode and at least one second external electrode, wherein the first external electrode and the second external electrode are located above the laminated structure, and the first external electrode is electrically connected to the multiple Part or all of the odd-numbered conductive layers in the conductive layer, and the second external electrode is electrically connected to part or all of the even-numbered conductive layers in the multilayer conductive layer;

At least one third external electrode and at least one fourth external electrode, wherein the third external electrode and the fourth external electrode are located below the laminated structure, and the third external electrode is electrically connected to the multiple Part or all of the odd-numbered conductive layers in the conductive layer, and the fourth external electrode is electrically connected to part or all of the even-numbered conductive layers in the multilayer conductive layer.

In some possible implementation manners, the capacitor further includes:

A multi-wing structure, wherein the laminated structure covers the multi-wing structure.

In some possible implementations, the multi-wing structure includes multiple groups of wing-like structures and multiple supporting structures, wherein each wing-like structure in each group of wing-like structures is arranged in parallel, the supporting structure is a hollow structure, and the wing-like structure The structure is a convex structure formed by extending the outer side wall of the supporting structure along a first direction, and the first direction is a direction perpendicular to the side wall of the supporting structure.

In some possible implementations, part or all of the conductive layers in the multilayer conductive layer are conformal to the multi-wing structure.

In some possible implementation manners, a part of the conductive layer in the multilayer conductive layer is conformal to the multi-wing structure, and the other part of the conductive layer is complementary in shape to the multi-wing structure.

In some possible implementations, a single wing-like structure in the plurality of groups of wing-like structures includes a plurality of wings extending along the first direction.

In some possible implementation manners, the support structure of the plurality of support structures is provided with at least one shaft in the hollow area thereof, and the shaft is parallel to the side wall of the support structure.

In some possible implementation manners, the capacitor further includes:

The isolation ring is located above the outer side of the plurality of support structures, and the isolation ring is used to separate the laminated structure into two parts, an inner side and an outer side. The first external electrode and the second external electrode are only Are electrically connected to the part of the laminated structure located inside the isolation ring, and the third external electrode and the fourth external electrode are only electrically connected to the part of the laminated structure located inside the isolation ring .

In some possible implementation manners, the capacitor further includes:

At least one first conductive via structure and at least one second conductive via structure, wherein

The first conductive via structure is located in the isolation ring, and the second conductive via structure is located outside the isolation ring near the center of the capacitor; or, the first conductive via structure and/ Or the second conductive via structure is located outside the isolation ring near the center of the capacitor;

The first external electrode is electrically connected to some or all of the odd-numbered conductive layers in the multilayer conductive layer through the at least one first conductive via structure, and the second external electrode is electrically connected to the at least one second conductive layer through the at least one second conductive layer. Part or all of the even-numbered conductive layers in the multilayer conductive layers to which the via structure is electrically connected.

In some possible implementation manners, the capacitor further includes a ring structure located outside the plurality of support structures and the plurality of sets of wing-shaped structures.

In some possible implementation manners, the ring structure is formed by alternately stacking multiple layers of the first material and multiple layers of the second material.

In some possible implementations, the plurality of wing-shaped structures and the plurality of supporting structures are formed of the first material.

In some possible implementations, the multi-wing structure is made of a conductive material, and the second external electrode is electrically connected to the multi-wing structure.

In some possible implementations, the multi-wing structure includes a main body material and a conductive layer or area on the surface of the main body material, and the second external electrode is electrically connected to the main body material and the conductive layer or area on the surface of the main body material. The electrical connection of the multi-wing structure.

In some possible implementation manners, the multi-wing structure is formed of a material with a resistivity less than a threshold value, or a heavily doped conductive layer or a heavily doped conductive region is formed on the surface of the multi-wing structure.

In some possible implementation manners, the capacitor further includes a filling structure that covers the laminated structure and fills the gap formed by the laminated structure.

In some possible implementation manners, the capacitor further includes: a substrate disposed under the multi-wing structure.

In some possible implementations, the wing-shaped structure in contact with the substrate in the plurality of groups of wing-shaped structures has a discontinuous area between different support structures.

In some possible implementation manners, the substrate forms a substrate trench at the discontinuous region, and the stacked structure is further disposed in the substrate trench.

In some possible implementation manners, the support structure penetrates the substrate, so that the lower surface of the substrate exposes the laminated structure.

In some possible implementations, the third external electrode and/or the fourth external electrode are electrically connected to a region of the multilayer conductive layer located in the support structure.

In some possible implementation manners, the substrate is made of a conductive material, and the third external electrode is electrically connected to a conductive layer of the multilayer conductive layer that is in contact with the substrate through the substrate.

In some possible implementations, the first external electrode and/or the second external electrode are electrically connected to the conductive layer in the multilayer conductive layer through a first interconnection structure located above the multi-wing structure.

In some possible implementations, the first interconnection structure includes at least one first insulating layer, at least one first conductive via structure, and at least one second conductive via structure, wherein the at least one first insulating layer Located above the multi-wing structure, the first conductive via structure and the second conductive via structure penetrate the at least one first insulating layer, and the first external electrode passes through the at least one first conductive The via structure is electrically connected to some or all of the odd-numbered conductive layers in the multilayer conductive layer, and the second external electrode is electrically connected to the multilayer conductive layer through the at least one second conductive via structure Part or all of the even-numbered conductive layers.

In some possible implementation manners, the third external electrode and/or the fourth external electrode are electrically connected to the conductive layer in the multilayer conductive layer through a second interconnection structure located under the multi-wing structure.

In some possible implementations, the second interconnection structure includes at least one second insulating layer, at least one third conductive via structure, and at least one fourth conductive via structure, wherein the at least one second insulating layer Located below the multi-wing structure, the third conductive via structure and the fourth conductive via structure penetrate the at least one second insulating layer, and the third external electrode passes through the at least one third conductive The via structure is electrically connected to some or all of the odd-numbered conductive layers in the multilayer conductive layer, and the fourth external electrode is electrically connected to the multilayer conductive layer through the at least one fourth conductive via structure Part or all of the even-numbered conductive layers.

In some possible implementation manners, the capacitor further includes: a first electrode layer disposed above the laminated structure, and the first electrode layer includes at least one first conductive region and at least one second conductive region that are separated from each other. A conductive region, the first conductive region forms the first external electrode, and the second conductive region forms the second external electrode.

In some possible implementation manners, the capacitor further includes: a second electrode layer disposed below the laminated structure, and the second electrode layer includes at least one third conductive region and at least one fourth conductive region that are separated from each other. A conductive region, the third conductive region forms the third external electrode, and the fourth conductive region forms the fourth external electrode.

In some possible implementation manners, the conductive layer in the multilayer conductive layer includes at least one of the following:

Heavily doped polysilicon layer, metal silicide layer, carbon layer, conductive polymer layer, aluminum layer, copper layer, nickel layer, tantalum nitride layer, titanium nitride layer, aluminum titanium nitride layer, tantalum silicon nitride layer, Tantalum carbon nitride layer.

In some possible implementation manners, the dielectric layer in the at least one dielectric layer includes at least one of the following:

Silicon oxide layer, silicon nitride layer, silicon oxynitride layer, metal oxide layer, metal nitride layer and metal oxynitride layer.

In the second aspect, a capacitor structure is provided, including:

The first capacitor and the second capacitor, wherein the first capacitor and the second capacitor are the capacitors in the above-mentioned first aspect and any possible implementation manner thereof, and the second capacitor is located in the first capacitor And the first external electrode of the first capacitor is electrically connected to the third external electrode of the second capacitor, and the second external electrode of the first capacitor is electrically connected to the fourth external electrode of the second capacitor. connect.

In some possible implementation manners, the capacitor structure further includes: a third capacitor, the third capacitor being the capacitor in the above-mentioned first aspect and any one of its possible implementation manners, and the third capacitor is located in the Below the first capacitor, and the third external electrode of the first capacitor is electrically connected to the first external electrode of the third capacitor, and the fourth external electrode of the first capacitor is connected to the second external electrode of the third capacitor. The external electrodes are electrically connected.

In the third aspect, a method for manufacturing a capacitor is provided, including:

A laminated structure is prepared over the substrate, the laminated structure includes at least one dielectric layer and a plurality of conductive layers, the at least one dielectric layer and the multilayer conductive layer form a structure in which the conductive layer and the dielectric layer alternate with each other ；

At least one first external electrode and at least one second external electrode are prepared, wherein the first external electrode and the second external electrode are located above the laminated structure, and the first external electrode is electrically connected to the Part or all of the odd-numbered conductive layers in the multilayer conductive layer, and the second external electrode is electrically connected to part or all of the even-numbered conductive layers in the multilayer conductive layer;

At least one third external electrode and at least one fourth external electrode are prepared, wherein the third external electrode and the fourth external electrode are located below the laminated structure, and the third external electrode is electrically connected to the Part or all of the odd-numbered conductive layers in the multilayer conductive layer, and the fourth external electrode is electrically connected to part or all of the even-numbered conductive layers in the multilayer conductive layer.

In some possible implementation manners, the method further includes:

A multi-wing structure is prepared above the substrate, and the laminated structure covers the multi-wing structure.

In some possible implementation manners, the preparing a multi-wing structure above the substrate includes:

A multi-layer structure is prepared over the substrate, the multi-layer structure includes a multi-layer first material layer and a multi-layer second material layer, the multi-layer first material layer and the multi-layer second material layer form a first material layer A structure in which a material layer and a second material layer alternate with each other, the first material and the second material are different, and the first material layer is in direct contact with the substrate;

Preparing a plurality of trenches on the basis of the multilayer structure, the trenches extending in a direction perpendicular to the substrate and entering the substrate;

The first material is deposited on the upper surface of the multilayer structure, the bottoms and inner side walls of the plurality of trenches to form a plurality of hollow columnar first structures made of the first material, as the formation of the The foundation of multiple supporting structures;

Preparing a plurality of trench-shaped second structures in the remaining multilayer structure, the second structures extending to the upper surface of the substrate in a direction perpendicular to the substrate;

Removing the second material layer exposed in the plurality of second structures;

The substrate is thinned to form the multi-wing structure.

In some possible implementation manners, the method further includes:

Prepare an isolation ring, the isolation ring is located above the outer side of the plurality of support structures, and the isolation ring is used to separate the laminated structure into two parts, an inner side and an outer side, the first external electrode and the The second external electrode is only electrically connected to the part of the laminated structure located on the inner side of the isolation ring, and the third external electrode and the fourth external electrode are only electrically connected to the laminated structure located on the inner side of the isolation ring. The inner part is electrically connected.

In some possible implementation manners, the method further includes:

At least one first conductive via structure and at least one second conductive via structure are prepared, wherein,

In some possible implementations, the multiple sets of wing-shaped structures and the multiple supporting structures are formed of the first material.

In some possible implementation manners, the method further includes:

A filling structure is prepared, and the filling structure covers the laminated structure and fills the voids formed by the laminated structure.

In some possible implementation manners, the substrate is made of a conductive material, and the third external electrode is electrically connected to the conductive layer in contact with the substrate in the multilayer conductive layer through the substrate.

In some possible implementation manners, the method further includes:

A first interconnection structure is prepared, wherein the first interconnection structure is located above the multi-wing structure, and the first external electrode and/or the second external electrode are electrically connected to the multi-wing structure through the first interconnection structure. The conductive layer in the conductive layer.

In some possible implementation manners, the method further includes:

A second interconnection structure is prepared, wherein the second interconnection structure is located below the multi-wing structure, and the third external electrode and/or the fourth external electrode are electrically connected to the multi-wing structure through the second interconnection structure. The conductive layer in the conductive layer.

In some possible implementation manners, the preparing at least one first external electrode and at least one second external electrode includes:

A first electrode layer is prepared above the laminated structure. The first electrode layer includes at least one first conductive region and at least one second conductive region that are separated from each other, and the first conductive region forms the first external circumstance. An electrode, and the second conductive area forms the second external electrode.

In some possible implementation manners, the preparing at least one third external electrode and at least one fourth external electrode includes:

A second electrode layer is prepared under the multi-wing structure. The second electrode layer includes at least one third conductive region and at least one fourth conductive region that are separated from each other, and the third conductive region forms the third external circumstance. An electrode, the fourth conductive area forms the fourth external electrode.

Therefore, in the embodiments of the present application, the multi-wing structure is used as the skeleton, and the laminated structure is arranged on the multi-wing structure, so that the surface area of the laminated structure can be increased, and the result can be obtained with a smaller device size (capacitor chip size). Larger capacitance value increases the capacitance value density of the capacitor, and multiple electrodes of the capacitor are arranged on the front and back sides of the capacitor, so that the double-sided capacitor can be prepared based on the multi-wing structure, which is convenient for the capacitors to be stacked in parallel in a vertical manner. , To meet different application requirements. Further, compared to a solid supporting structure, the supporting structure in the present application is a hollow structure, which can have a larger surface area, and compared to a columnar supporting structure, the wing-shaped structure in the present application is on the outer side wall of the supporting structure. The formed convex structure, that is, the outer side wall of the support structure is formed with wing-like supports, so as to increase the surface area of the multi-wing structure, and in the present application, the laminated structure covers the multi-wing structure, while the surface area of the multi-wing structure is increased. , The surface area of the laminated structure will also increase accordingly, which can further increase the capacitance density of the capacitor.

Description of the drawings

Fig. 1 is a schematic structural diagram of a capacitor according to an embodiment of the present application.

2 to 6 are schematic structural diagrams of the multi-wing structure included in the capacitor according to the embodiment of the present application.

Fig. 7 is a schematic structural diagram of another capacitor according to an embodiment of the present application.

Fig. 8 is a schematic structural diagram of a vertical stack of capacitors according to an embodiment of the present application.

Fig. 9 is a schematic structural diagram of a capacitor structure according to an embodiment of the present application.

Fig. 10 is a schematic flowchart of a method for manufacturing a capacitor according to an embodiment of the present application.

11a to 11o are schematic diagrams of a manufacturing method of a capacitor according to an embodiment of the present application.

Detailed ways

The technical solutions in the embodiments of the present application will be described below in conjunction with the accompanying drawings.

It should be understood that the capacitors in the embodiments of the present application can perform functions such as bypassing, filtering, and decoupling in the circuit.

The capacitor described in the embodiment of the present application may be a 3D silicon capacitor, which is a new type of capacitor based on semiconductor wafer processing technology. Compared with traditional MLCC (multilayer ceramic capacitors), 3D silicon capacitors have the advantages of small size, high precision, high stability, and long life. The basic processing flow requires processing high-aspect-ratio deep holes (Via), trenches (Trench), pillars (Pillar), wall (Wall) and other 3D structures on the wafer or substrate first, and then in the 3D structure An insulating film and a low-resistivity conductive material are deposited on the surface to make the lower electrode, the dielectric layer and the upper electrode of the capacitor in sequence.

In this context, this application proposes a new type of capacitor structure and manufacturing method, which can increase the capacitance density of the capacitor.

Hereinafter, the capacitor of the embodiment of the present application will be described in detail with reference to FIGS. 1 to 8.

It should be understood that the capacitors in FIGS. 1 and 8 are only examples, and the multi-wing structure included in the capacitor is not limited to those shown in FIGS. 1 to 8 and can be flexibly adjusted according to actual needs. At the same time, the number of wing-like structures and the number of supporting structures included in the multi-wing structure are only examples, and are not limited to those shown in FIGS. 1 to 8, and can be flexibly set according to actual needs.

It should be noted that, for ease of understanding, in the embodiments shown below, for the structures shown in different embodiments, the same structures are given the same reference numerals, and for the sake of brevity, detailed descriptions of the same structures are omitted. .

FIG. 1 is a possible structural diagram of a capacitor 100 according to an embodiment of the present application. As shown in FIG. 1, the capacitor 100 includes a laminated structure 120, at least one first external electrode 130, at least one second external electrode 140, at least one third external electrode 150 and at least one fourth external electrode 160.

Specifically, as shown in FIG. 1, in the capacitor 100, the laminated structure 120 includes at least one dielectric layer and multiple conductive layers. The at least one dielectric layer and the multiple conductive layers form a conductive layer and a dielectric layer. Structures adjacent to each other; the first external electrode 130 and the second external electrode 140 are located above the laminated structure 120, and the first external electrode 130 is electrically connected to some or all of the odd-numbered layers of the multilayer conductive layer Layer, the second external electrode 140 is electrically connected to some or all of the even-numbered conductive layers in the multilayer conductive layer; the third external electrode 150 and the fourth external electrode 160 are located under the laminated structure 120, and the second external electrode 140 is The three external electrodes 150 are electrically connected to part or all of the odd-numbered conductive layers in the multilayer conductive layer, and the fourth external electrode 160 is electrically connected to part or all of the even-numbered conductive layers in the multilayer conductive layer.

In the embodiment of the present application, two adjacent conductive layers in the multilayer conductive layer are electrically isolated by a dielectric layer. The specific number of layers of the conductive layer and the dielectric layer can be flexibly configured according to actual needs, and only needs to satisfy the electrical isolation between two adjacent conductive layers in the multilayer conductive layer.

Optionally, in the embodiment of the present application, the capacitor 100 further includes a multi-wing structure 110, and the laminated structure 120 covers the multi-wing structure 110.

Specifically, as shown in FIG. 1, in the capacitor 100, the multi-wing structure 110 includes a plurality of groups of wing-shaped structures 111 and a plurality of supporting structures 112, wherein each wing-shaped structure 111 in each group of wing-shaped structures 111 is arranged in parallel, and the The supporting structure 112 is a hollow structure, and the wing-shaped structure 111 is a convex structure formed by extending the outer side wall of the supporting structure 112 in a first direction, and the first direction is a direction perpendicular to the side wall of the supporting structure 112, where the wing-shaped structure The structure 111 and the supporting structure 112 are connected to each other as a whole.

It should be noted that the multiple wing-like structures 111 arranged in parallel on the outer side wall of one supporting structure 112 belong to the same group. In addition, the wing-like structures 111 in each group are correspondingly arranged, and the correspondingly arranged wing-like structures 111 are located on the same horizontal plane.

It should be noted that, in the embodiments of the present application, the multi-wing structure is used as the skeleton, and the laminated structure is arranged on the multi-wing structure, so that the surface area of the laminated structure can be increased, and it can be used in a smaller device size (capacitor chip size). In this case, a larger capacitance value is obtained, the capacitance density of the capacitor is improved, and multiple electrodes of the capacitor are set on the front and back sides of the capacitor, so that the double-sided capacitor can be prepared based on the multi-wing structure, which facilitates the vertical stacking of the capacitor It is connected in parallel with other capacitors to meet different application requirements. Further, in the embodiments of the present application, compared to a solid support structure, the support structure in the present application is a hollow structure, which can have a larger surface area, and compared to a columnar support structure, the wing-shaped structure in the present application It is the convex structure formed on the outer side wall of the support structure, that is, the wing-like support is formed on the outer side wall of the support structure, so that the surface area of the multi-wing structure can be increased. In this application, the laminated structure covers the multi-wing structure. As the surface area of the wing structure increases, the surface area of the laminated structure also increases correspondingly, which can further increase the capacitance density of the capacitor.

It should be understood that the surface area of the multi-wing structure can be understood as the area of the inner side wall of the support structure, the upper and lower surfaces and sides of the wing-like structure that can be used to attach the laminated structure.

In the embodiment of the present application, the multi-wing structure 110 is a skeleton, which may not be used as a part of the capacitor itself, that is, the multi-wing structure 110 may not be limited to the material selection of the capacitor electrode material, that is, the material selection of the multi-wing structure 110 It can be more flexible, so that the preparation process of the multi-wing structure 110 can be simplified.

It should be understood that the external electrode in the embodiment of the present application may also be referred to as a pad or an external pad.

Optionally, in some embodiments, the supporting structure 112 of the plurality of hollow supporting structures 112 may have an annular side wall.

Optionally, in other embodiments, the supporting structure 112 of the plurality of hollow supporting structures 112 may have two oppositely distributed side walls.

That is, the sidewall of the supporting structure 112 may form a hollow area. Since the laminated structure 120 covers the supporting structure, that is, the laminated structure 120 may be disposed in this hollow area.

Optionally, the material of the first external electrode 130 and the second external electrode 140 may be metal, such as copper, aluminum, or the like. Optionally, the surfaces of the first external electrode 130 and the second external electrode 140 may be provided with low resistivity Ti, TiN, Ta, TaN layers as an adhesion layer and/or barrier layer to facilitate the first external electrode 130 And the second external electrode 140 to adhere to other structures of the capacitor, or to facilitate blocking between the first external electrode 130 and the second external electrode 140 and other structures of the capacitor; in addition, the first external electrode 140 The surface of the electrode 130 and the second external electrode 140 may also be provided with some metal layers, such as Ni, Pd (palladium), Au, Sn (tin), and Ag for subsequent wire bonding or welding processes.

Optionally, the material of the third external electrode 150 and the fourth external electrode 160 may be metal, such as copper, aluminum, or the like. Optionally, the surface of the third external electrode 150 and the fourth external electrode 160 may be provided with low resistivity Ti, TiN, Ta, TaN layers as an adhesion layer and/or barrier layer to facilitate the third external electrode 150 And the fourth external electrode 160 are adhered to other structures of the capacitor, or to facilitate blocking between the third external electrode 150 and the fourth external electrode 160 and other structures of the capacitor; in addition, the third external electrode The surface of the electrode 150 and the fourth external electrode 160 may also be provided with some metal layers, such as Ni, Pd (palladium), Au, Sn (tin), and Ag for subsequent wire bonding or welding processes.

Optionally, the conductive layer in the multilayer conductive layer includes at least one of the following:

That is, in the laminated structure 120, the material of the conductive layer in the multilayer conductive layer may be heavily doped polysilicon, metal silicide (silicide), carbon, conductive polymer, Al, Cu, Ni, etc. Metal, tantalum nitride (TaN), titanium nitride (TiN), titanium aluminum nitride (TiAlN), tantalum silicon nitride (TaSiN), tantalum carbon nitride (TaCN) and other low-resistivity compounds, or the multilayer conductive The conductive layer in the layer is a combination, laminate, and composite structure of the above-mentioned materials. That is to say, a conductive layer in the multilayer conductive layer may be one layer or multiple stacked layers, and a certain conductive layer in the multilayer conductive layer may be a single layer formed of a single material, or it may be A composite layer formed by a variety of materials.

It should be noted that the materials and thicknesses of different conductive layers in the multilayer conductive layer may be the same or different. The specific conductive material and layer thickness of the conductive layer in the multilayer conductive layer can be adjusted according to the capacitance, frequency characteristics, loss and other requirements of the capacitor. Of course, the conductive layer in the multilayer conductive layer may also include some other conductive materials, which is not limited in the embodiment of the present application.

Optionally, the dielectric layer in the at least one dielectric layer includes at least one of the following:

That is, in the laminated structure 120, the material of the dielectric layer in the at least one dielectric layer may be silicon oxide, silicon nitride, silicon oxynitride, metal oxide, or metal nitrogen. Compounds, metal oxynitrides. For example, SiO ₂ , SiN, SiON, or high-k materials, including Al ₂ O ₃ , HfO ₂ , ZrO ₂ , TiO ₂ , Y ₂ O ₃ , La ₂ O ₃ , HfSiO ₄ , LaAlO ₃ , SrTiO ₃ , LaLuO ₃ and so on. One dielectric layer in the at least one dielectric layer may be one layer or a plurality of stacked layers, and one dielectric layer in the at least one dielectric layer may be one material or a combination or mixture of multiple materials.

It should be noted that the materials and thicknesses of different dielectric layers in the at least one dielectric layer may be the same or different. The specific insulating material and layer thickness of the dielectric layer in the at least one dielectric layer can be adjusted according to the capacitance, frequency characteristics, loss and other requirements of the capacitor. Of course, the dielectric layer in the at least one dielectric layer may also include some other insulating materials, which is not limited in the embodiment of the present application.

In the embodiment of the present application, in the laminated structure 120, the order of the at least one dielectric layer may be as follows: on the multi-wing structure 110, the distance from the multi-wing structure 110 is ascending or descending. In the same way, the order of the multilayer conductive layers can also be: on the multi-wing structure 110, the distance from the multi-wing structure 110 is from small to large or from large to small. For ease of description, in the embodiment of the present application, the sequence of the at least one dielectric layer and the multi-layer conductive layer is described by taking the order of the distance from the multi-wing structure 110 to the multi-wing structure 110 from small to large as an example.

Optionally, in the embodiment of the present application, the capacitor 100 further includes a substrate 170, and the substrate 170 is disposed under the multi-wing structure 110, as shown in FIG. 1.

It should be noted that the first direction may be a direction parallel to the substrate 170, or the first direction may be a direction perpendicular to the normal line of the substrate 170. That is, the support structure 112 of the plurality of support structures 112 may extend along the direction of the normal line of the substrate 170.

It should be noted that in the embodiment of the present application, the thickness of the substrate 170 can also be flexibly set according to actual needs. For example, when the thickness of the substrate 170 is too thick to meet the requirements, the substrate 170 can be Perform thinning treatment. It is even possible to completely remove the substrate 170.

It should be noted that the above-mentioned Fig. 1 is a cross section along the longitudinal direction of the substrate.

Optionally, in the embodiment of the present application, the substrate 170 may be a silicon wafer, including monocrystalline silicon, polycrystalline silicon, and amorphous silicon. The substrate 170 may also be other semiconductor substrates, including silicon-on-insulator (SOI) wafers, silicon carbide (SiC), gallium nitride (GaN), and gallium arsenide (GaAs). ) And other compound semiconductor wafers of group III-V elements. The substrate 170 may also be a metal plate, glass, ceramic, organic polymer, or other rigid substrate. In addition, the surface of the substrate 170 may include a bonding layer, an epitaxial layer, an oxide layer, a doped layer, and the like.

Optionally, in some embodiments, the wing-shaped structure 111 between the different support structures 112 that is in contact with the substrate 170 is continuous, and the substrate 170 has a flat surface in the area between the different support structures 112. In addition, other wing-like structures 111 between different support structures 112 may also be continuous. For example, when the different support structures 112 are interrupted by an annular groove, all the wing-like structures 111 between the support structures 112 are continuous. of.

Optionally, in other embodiments, the wing-shaped structure 111 between the different support structures 112 that is in contact with the substrate 170 is discontinuous, and the substrate 170 is formed with a substrate trench 171 in the region between the different support structures 112 .

Optionally, in some embodiments, the support structure 112 may also extend into the substrate 170.

Optionally, in some embodiments, a single wing-like structure 111 in the plurality of groups of wing-like structures 111 may have multiple wings (also referred to as branches) extending in the first direction. In addition, in some embodiments, the support structure 112 of the plurality of support structures 112 may be provided with (have) at least one axis extending in a direction parallel to the support structure 112 in the hollow area thereof.

Optionally, in the embodiment of the present application, the capacitor 100 further includes an isolation ring 180, the isolation ring 180 is located above the outer side of the plurality of support structures 112, and the isolation ring 180 is used to separate the laminated structure 120 The first external electrode 130 and the second external electrode 140 are only electrically connected to the part of the laminated structure 120 located on the inner side of the isolation ring 180, and the third external electrode 150 and the fourth external electrode. The external electrode 160 is only electrically connected to the part of the laminated structure 120 located inside the isolation ring 180, as shown in FIG. 1.

Optionally, the isolation ring 180 is located above the ring structure 113, as shown in FIG. 1.

Optionally, in the embodiment of the present application, the supporting structure 112 of the plurality of supporting structures 112 penetrates the substrate 170, so that the lower surface of the substrate 170 can expose the laminated structure 120, and the third external electrode 150 and/or the fourth external electrode 160 are electrically connected to the region of the multi-layer conductive layer in the support structure 112. For example, as shown in FIG. 1, the third external electrode 150 and the fourth external electrode 160 are electrically connected to regions of the multi-layer conductive layer respectively located in different supporting structures 112.

Optionally, in the embodiment of the present application, the capacitor 100 further includes: at least one first conductive via structure 201 and at least one second conductive via structure 202, wherein the first external electrode 130 passes through the at least one first conductive via structure. A conductive via structure 201 is electrically connected to some or all of the odd-numbered conductive layers in the multilayer conductive layer, and the second external electrode 140 is electrically connected to the multilayer conductive layer through the at least one second conductive via structure 202 Some or all of the even-numbered conductive layers are as shown in Figure 1.

In some embodiments, the first conductive via structure 201 is located in the isolation ring 180, and the second conductive via structure 202 is located outside the isolation ring 180 near the center of the capacitor 100.

In other embodiments, the first conductive via structure 201 and/or the second conductive via structure 202 are located outside the isolation ring 180 near the center of the capacitor 100. For example, as shown in FIG. 1, the first conductive via structure 201 and the second conductive via structure 202 are both located outside the isolation ring 180 near the center of the capacitor 100, and the first conductive via structure 201 Set in the conducting structure 181.

It should be noted that at the edge position of the capacitor 100 or the capacitor chip, due to the insufficient insulation capability of air, air breakdown is prone to occur between the laminated structure 120 and the ring structure 113, which results in a decrease in the performance of the capacitor. The arrangement of the isolation ring 180 can make the area of the laminated structure 120 located outside the isolation ring 180 not constitute the electrode plate of the capacitor 100, thereby avoiding the occurrence between the laminated structure 120 and the ring structure 113 at the edge of the capacitor 100. The problem of air breakdown.

It should also be noted that the conductive structure 181 and the isolation ring 180 can be prepared and formed simultaneously.

Optionally, in some embodiments, in the laminated structure 120, part or all of the conductive layers in the multilayer conductive layer are conformal to the multi-wing structure 110.

Optionally, in other embodiments, in the laminated structure 120, a part of the conductive layer in the multilayer conductive layer is conformal to the multi-wing structure 110, and the other part of the conductive layer conforms to the multi-wing structure in appearance. 110 complementary.

For example, as shown in Figure 1, the multi-wing structure 110 includes three groups of wing-like structures 111 and three supporting structures 112. The three groups of wing-like structures 111 are denoted as group 1, group 2, and group 3 from left to right. Each includes 4 wing-like structures 111, among which the wing-like structure 111 in group 1 is only arranged on the outer side wall of the corresponding support structure 112, the wing-like structure 111 in group 2 is arranged around the outer side wall of the corresponding support structure 112, and in group 3 The wing-like structure 111 is only arranged on the outer sidewall of the corresponding support structure 112 near the left side. The laminated structure 120 includes two conductive layers and one dielectric layer, such as the conductive layer 21 and the conductive layer 22 as shown in FIG. 1, and the dielectric layer 23. Specifically, as shown in FIG. 1, the conductive layer 21 is in direct contact with the multi-wing structure 110, that is, the conductive layer 21 is disposed on the surface of the multi-wing structure 110 and covers the multi-wing structure 110, and the conductive layer 21 shares the same with the multi-wing structure 110. The conductive layer 22 is arranged above the conductive layer 21, and the conductive layer 22 is complementary to the multi-wing structure 110 in shape; the dielectric layer 23 is arranged between the conductive layer 21 and the conductive layer 22 to connect the conductive layer 21 and the conductive layer 22 Electrically isolated, the dielectric layer 23 is also conformal to the multi-wing structure 110.

It should be noted that the conductive layer 21 in the laminated structure 120 is conformal to the multi-wing structure 110. It can be understood that the conductive layer 21 and the multi-wing structure 110 may have the same or substantially the same outline, so that the conductive layer 21 The area in contact with the multi-wing structure 110 can be covered, so that the conductive layer 21 can obtain a larger surface area based on the multi-wing structure 110, thereby increasing the capacitance density of the capacitor. Similarly, the dielectric layer 23 is also conformal to the multi-wing structure 110, and the dielectric layer 23 may also have the same or substantially the same contour as the multi-wing structure 110. The conductive layer 22 is complementary to the multi-wing structure 110 in appearance. It can be understood that the combination of the conductive layer 22 and the multi-wing structure 110 can form a structure without internal voids or cavities, which improves the structural integrity and mechanical stability of the capacitor. .

Optionally, in some embodiments, the multi-wing structure 110 is made of a conductive material, and the second external electrode 140 is electrically connected to the multi-wing structure 110. That is, when the multi-wing structure 110 is conductive, the multi-wing structure 110 can also be used as an electrode plate of the capacitor 100.

Optionally, in other embodiments, the multi-wing structure 110 includes a main body material and a conductive layer or area on the surface of the main body material, and the second external electrode 140 passes through the conductive layer or area on the surface of the main body material and the main body material. The electrical connection is with the electrical connection of the multi-wing structure 110.

It should be noted that when the second external electrode 140 is also electrically connected to the multi-wing structure 110, the multi-wing structure 110 and the laminated structure 120 need to be electrically isolated, for example, the multi-wing structure 110 A dielectric layer is provided between the laminated structure 120 and the laminated structure 120.

Optionally, the multi-wing structure 110 is conductive. It can be understood that the multi-wing structure 110 is formed of a material with a resistivity less than a threshold value, or the surface of the multi-wing structure 110 is formed with a highly doped conductive material with a resistivity less than the threshold value. Layer or conductive area.

For example, the multi-wing structure 110 may be doped to form a p++-type or n++-type low-resistivity conductive layer or conductive region.

For another example, a low-resistivity conductive material is deposited on the surface of the multi-wing structure 110, such as using a PVD or ALD process to deposit TiN and/or TaN and/or Pt and other metals, or using a CVD process to deposit heavily doped polysilicon, metal tungsten , Carbon materials.

It should be understood that a material with a resistivity less than the threshold value can be regarded as a conductive material.

It should be noted that the multi-wing structure 110 is formed of a material with a resistivity less than a threshold, which can ensure that the multi-wing structure 110 is conductive, that is, it can be used as an electrode plate of the capacitor 100.

Optionally, in the embodiment of the present application, the capacitor 100 further includes: a filling structure 190 that covers the laminated structure 120 and fills the cavity or gap formed by the laminated structure 120, as shown in FIG. 1 Shown. Thereby, the structural integrity and mechanical stability of the capacitor can be improved.

Optionally, in some embodiments, the filling structure 190 is complementary to the laminated structure 120 in shape. For example, the filling structure 190 can be structurally complementary to the laminated structure 120, and the combination of the two can form a structure with no internal voids or cavities, which improves the structural integrity and mechanical stability of the capacitor.

It should be noted that the material of the filling structure 190 may be a conductive material, such as metal tungsten, or some other materials, which is not limited in this application.

Optionally, when the material of the filling structure 190 is a conductive material, the filling structure 190 may also be used as an electrode plate of the capacitor 100.

Optionally, in the embodiment of the present application, the first external electrode 130 and/or the second external electrode 140 are electrically connected to the multi-layer conductive layer through the first interconnection structure 200 located above the multi-wing structure 110 Conductive layer.

Optionally, the first interconnection structure 200 includes at least one first conductive via structure 201, at least one second conductive via structure 202, and at least one first insulating layer 203, wherein the first conductive via structure 201 and The second conductive via structure 202 penetrates the at least one first insulating layer 203, and the first external electrode 130 is electrically connected to some or all of the odd-numbered layers of the multilayer conductive layer through the at least one first conductive via structure 201 A conductive layer, the second external electrode 140 is electrically connected to some or all of the even-numbered conductive layers in the multilayer conductive layer through the at least one second conductive via structure 202. Specifically, as shown in FIG. 1, the first interconnect structure 200 is disposed above the filling structure 190.

It should be noted that the at least one first insulating layer 203 may also be referred to as an intermetal dielectric layer (IMD) or an interlayer dielectric layer (ILD). In addition, the at least one first insulating layer 203 and the isolation ring 180 have The same material, in other words, the at least one first insulating layer 203 and the isolation ring 180 can be formed in the same step.

Optionally, the material of the at least one first insulating layer 203 may be an organic polymer material, including polyimide, Parylene, benzocyclobutene (BCB), etc.; or It is some inorganic materials, including spin-on glass (SOG), undoped silicon glass (USG), boro-silicate glass (BSG), and phospho-silicate glass (phospho-silicate glass). glass, PSG), boro-phospho-silicate glass (BPSG), Tetraethyl Orthosilicate (TEOS), silicon oxide, nitride, carbide, ceramic; it can also be the above materials A combination or stack of layers.

Optionally, the materials of the first conductive via structure 201 and the second conductive via structure 202 can be made of low-resistivity conductive materials, such as heavily doped polysilicon, tungsten, Ti, TiN, Ta, TaN, and the like.

It should be understood that the shape and number of the first conductive via structure 201 and the second conductive via structure 202 may be specifically determined according to the manufacturing process of the capacitor 100, which is not limited in the embodiment of the present application.

Optionally, in some embodiments, the at least one first external electrode 130 and the at least one second external electrode 140 are disposed above the multi-wing structure 110. Optionally, the capacitor 100 further includes: a first electrode layer disposed above the laminated structure 120, and the first electrode layer includes at least one first conductive region and at least one second conductive region that are separated from each other. The first conductive area forms the first external electrode 130, and the second conductive area forms the second external electrode 140, as specifically shown in FIG. 1. That is, the at least one first external electrode 130 and the at least one second external electrode 140 can be formed by one etching, which reduces the etching steps.

Specifically, as shown in FIG. 1, the first electrode layer is disposed above the first interconnect structure 200, the first external electrode 130 is electrically connected to the conductive layer 21 through the first conductive via structure 201, and the second external The electrode 140 is electrically connected to the conductive layer 22 through the second conductive via structure 202.

Optionally, in the embodiment of the present application, the third external electrode 150 and/or the fourth external electrode 160 are electrically connected to the multi-layer conductive layer through the second interconnection structure 210 located under the multi-wing structure 110 Conductive layer.

Optionally, the second interconnection structure 210 includes at least one third conductive via structure 211, at least one fourth conductive via structure 212, and at least one second insulating layer 213, wherein the third conductive via structure 211 and The fourth conductive via structure 212 penetrates the at least one second insulating layer 213, and the third external electrode 150 is electrically connected to some or all of the odd-numbered layers of the multilayer conductive layer through the at least one third conductive via structure 211 A conductive layer, the fourth external electrode 160 is electrically connected to part or all of the even-numbered conductive layers in the multilayer conductive layer through the at least one fourth conductive via structure 212. Specifically, as shown in FIG. 1, the second interconnection structure 210 is disposed under the substrate 170.

It should be noted that the at least one second insulating layer 213 may also be referred to as an intermetal dielectric layer (IMD) or an interlayer dielectric layer (ILD).

Optionally, the material of the at least one second insulating layer 213 may be an organic polymer material, including polyimide, Parylene, benzocyclobutene (BCB), etc.; or It is some inorganic materials, including SOG, USG, BSG, PSG, BPSG, TEOS, silicon oxides, nitrides, carbides, and ceramics; it can also be a combination or laminate of the above materials.

Optionally, the materials of the third conductive via structure 211 and the fourth conductive via structure 212 may be made of low-resistivity conductive materials, such as heavily doped polysilicon, tungsten, Ti, TiN, Ta, TaN, and the like.

It should be understood that the shape and quantity of the third conductive via structure 211 and the fourth conductive via structure 212 may be specifically determined according to the manufacturing process of the capacitor 100, which is not limited in the embodiment of the present application.

Optionally, in some embodiments, the at least one third external electrode 150 and the at least one fourth external electrode 160 are disposed under the multi-wing structure 110. Optionally, the capacitor 100 further includes: a second electrode layer disposed under the multi-wing structure 110, and the second electrode layer includes at least one third conductive region and at least one fourth conductive region that are separated from each other. The third conductive area forms the third external electrode 150, and the fourth conductive area forms the fourth external electrode 160, as specifically shown in FIG. 1. That is, the at least one third external electrode 150 and the at least one fourth external electrode 160 can be formed by one etching, which reduces the number of etching steps.

Specifically, as shown in FIG. 1, the second electrode layer is disposed under the second interconnection structure 210, the third external electrode 150 is electrically connected to the conductive layer 21 through the third conductive via structure 211, and the fourth external connection electrode 150 is electrically connected to the conductive layer 21 through the third conductive via structure 211. The electrode 160 is electrically connected to the conductive layer 22 through the fourth conductive via structure 212.

Optionally, in one embodiment, as shown in FIG. 2, the multi-wing structure 110 is disposed above the substrate 170, and the multi-wing structure 110 includes three groups of wing-shaped structures 111 and three supporting structures 112, and three groups of wing-shaped structures. The structure 111 is marked as group 1, group 2 and group 3 from left to right. Each group includes 4 wing-like structures 111. The wing-like structure 111 in group 1 is only arranged on the outer side wall of the corresponding support structure 112 near the right side. Above, the wing-like structure 111 in the group 2 is arranged around the outer side wall of the corresponding support structure 112, and the wing-like structure 111 in the group 3 is only arranged on the outer side wall of the corresponding support structure 112 near the left side. The supporting structure 112 of the three supporting structures 112 penetrates the substrate 170 so that the lower surface of the substrate 170 can expose the laminated structure 120. Thereby, the sidewall area of the supporting structure 112 can be increased, the surface area of the laminated structure 120 can be increased, and the capacitance density can be increased. At the same time, the mechanical stability of the multi-wing structure 110 can be improved.

Optionally, in another embodiment, as shown in FIG. 3, the multi-wing structure 110 is disposed above the substrate 170. Similar to the embodiment shown in FIG. 2, the multi-wing structure 110 includes three groups of wing-like structures 111 And 3 supporting structures 112, the 3 groups of wing-like structures 111 are marked as group 1, group 2 and group 3 from left to right. Each group includes 4 wing-like structures 111. Among them, the wing-like structures 111 in group 1 are only arranged in Corresponding to the outer side wall of the support structure 112 on the right side, the wing-like structure 111 in group 2 is arranged around the outer side wall of the corresponding support structure 112, and the wing-like structure 111 in the group 3 is only arranged on the outer side wall of the corresponding support structure 112 on the left side. However, the main difference from the embodiment in FIG. 2 is that the wing-shaped structure 111 (that is, the bottom wing-shaped structure) in contact with the substrate 170 in different groups has a discontinuous area between the different support structures 112, and the substrate 170 forms a substrate trench 171 at the discontinuous area. In other words, the laminated structure 120 can be disposed in the substrate trench 171, so that the surface area of the laminated structure 120 can be increased, the capacitance density can be increased, and the mechanical stability of the multi-wing structure 110 can be improved.

It should be noted that the present application does not limit the depth of the substrate trench 171 in FIG. 3.

Optionally, in the embodiment of the present application, the capacitor 100 further includes a ring structure 113, which is located outside the plurality of support structures 112 and the plurality of sets of wing-shaped structures 111, as shown in FIGS. 1 to 3 As shown, the top view of the ring structure 113 may be as shown in FIG. 4. The ring structure 113 can support and protect the support structure 112 to a certain extent. At the same time, the ring structure 113 can also form the edge area of the capacitor chip to facilitate subsequent preparation of the capacitor 100.

Optionally, the ring structure 113 is formed by alternately stacking multiple first material layers 10 and multiple second material layers 20. For example, as shown in FIGS. 1 to 3, the ring structure 113 is formed by alternately stacking 4 layers of

first material

10 and 3 layers of second material 20.

Optionally, the multi-wing structure 110 is formed of the first material, that is, the multi-wing structure may use the same material as a certain layer of the ring structure. In addition, the multi-wing structure 110 may also be formed of other materials, which is not limited in this application.

Optionally, the first material or the second material may be silicon (including single crystal silicon, polycrystalline silicon, amorphous silicon), silicon oxide, nitride or carbide, silicon-containing glass (including undoped silicon glass) (Undoped Silicon Glass, USG), boro-silicate glass (BSG), phospho-silicate glass (PSG), boro-phospho-silicate glass (BPSG), aluminum ( Al), copper (Cu), nickel (Ni) and other metals, or metal nitrides, carbides, carbon, organic polymers, or a combination or laminated structure of the above materials.

It should be understood that the first material and the second material are a combination of two types of materials. With respect to the first material, the second material can be selectively removed. Specifically, in the same corrosion or etching environment, the difference in the corrosion (or etching) rate of the first material and the second material is greater than 5 times. That is, in some specific environments, compared to the first material, the second material is more likely to be corroded (or etched) away.

For example, the first material may be silicon, and the second material may be silicon oxide. The silicon oxide can be removed with a hydrofluoric acid solution or gas and the silicon can be retained. For example, in the process of preparing multiple groups of wing-like structures 111, the material of the support structure 112 and the wing-like structure 111 may be silicon, and the material between the different wing-like structures 111 in the same group may be silicon oxide, so that hydrofluoric acid solution or The gas selectively removes silicon oxide and retains silicon to form groups of wing-like structures 111.

For another example, the first material may be silicon oxide, and the second material may be silicon, using KOH or NaOH or Tetra methyl ammonium Hydroxide (TMAH) solution, or xenon difluoride (XeF ₂ ) gas, The silicon can be removed while the silicon oxide remains. For example, in the process of preparing multiple groups of wing-like structures 111, the material of the supporting structure 112 and the wing-like structure 111 may be silicon oxide, and the material between different wing-like structures 111 in the same group may be silicon, so that KOH or NaOH or TMAH is used. The solution or xenon difluoride (XeF ₂ ) gas selectively removes silicon and retains silicon oxide to form groups of wing-like structures 111.

For another example, the first material may be silicon oxide and the second material is silicon nitride. Using a hot phosphoric acid solution, silicon nitride can be removed relatively quickly, while silicon oxide is retained. For example, in the process of preparing multiple groups of wing-like structures 111, the material of the support structure 112 and the wing-like structure 111 may be silicon oxide, and the material between different wing-like structures 111 in the same group may be silicon nitride, so that hot phosphoric acid is used. The solution selectively removes silicon nitride and retains silicon oxide to form groups of wing-like structures 111.

It should be noted that, in the embodiment of the present application, the stacked structure 120 may form a step structure in the upper region of the ring structure 113, so as to expose different conductive layers in the multi-layer conductive layer through different step surfaces of the step structure. . Therefore, the first external electrode 130 can be electrically connected to some or all of the odd-numbered conductive layers in the multilayer conductive layer through the step structure, and the second external electrode 140 can also be electrically connected to the multilayer conductive layer through the step structure. Part or all of the even-numbered conductive layers in the layers. In this structure, a plurality of "conductive-dielectric-conductive" basic capacitance units formed by the laminated structure 120 can be connected in parallel to form a large-capacity capacitor.

Optionally, in some embodiments, a single wing-like structure 111 in the plurality of groups of wing-like structures 111 includes a plurality of wings 11 (also referred to as branches) extending along the first direction. For example, as shown in FIG. 5, the multi-wing structure 110 includes two groups of wing-like structures 111 and two supporting structures 112. The supporting structure 112 is hollow columnar. The two groups of wing-like structures 111 are marked as group 1 and group from left to right. 2. Each group includes four wing-like structures 111 arranged in parallel along the first direction at intervals, wherein the wing-like structures 111 in group 1 and group 2 are arranged around the outer side wall of the corresponding support structure 112. And each of the four wing-like structures 111 in the group 1 and the group 2 includes two wings 11. That is, the arrangement of the wings 11 can further increase the surface area of the wing-like structure 111, and the laminated structure covers the multi-wing structure 110, thereby increasing the capacitance density of the capacitor.

Optionally, in some embodiments, the support structure 112 of the plurality of support structures 112 is provided with at least one shaft 12 in its hollow area. For example, as shown in Figure 6, the multi-wing structure 110 includes two groups of wing-like structures 111 and two supporting structures 112. The supporting structure 112 is hollow columnar. The two groups of wing-like structures 111 are denoted as group 1 and group from left to right. 2. Each group includes four wing-like structures 111 arranged in parallel along the first direction at intervals, wherein the wing-like structures 111 in group 1 and group 2 are arranged around the outer side wall of the corresponding support structure 112. The hollow area of each of the two supporting structures 112 is provided with two shafts 12 connecting the bottom of the supporting structure 112. That is, the arrangement of the shaft 12 can further increase the surface area of the support structure 112, and the laminated structure covers the multi-wing structure 110, thereby increasing the capacitance density of the capacitor.

In addition, in the embodiment of the present application, an axial structure may also be provided on the outer side of the support structure 112, which is not limited in the present application.

In the embodiment of the present application, the first external electrode 130 is electrically connected to part or all of the odd-numbered conductive layers in the multilayer conductive layer; the second external electrode 140 is electrically connected to part or all of the multilayer conductive layer Even number of conductive layers. The third external electrode 150 is electrically connected to part or all of the odd-numbered conductive layers in the multilayer conductive layer, and the fourth external electrode 160 is electrically connected to part or all of the even-numbered conductive layers in the multilayer conductive layer.

Therefore, in some scenarios, for different first external electrodes 130 and different second external electrodes 140, the laminated structure 120 can form capacitors with different capacitances. Similarly, for different third external electrodes 150 and different fourth external electrodes 160, the laminated structure 120 can form capacitors with different capacitances.

The following takes the first external electrode 130 and the second external electrode 140 as an example for description. The third external electrode 150 and the fourth external electrode 160 are equally applicable, and for the sake of brevity, details are not described herein again.

As an example, suppose that the capacitor 100 includes two first external electrodes and two second external electrodes, the two first external electrodes are respectively denoted as the first external electrode A and the first external electrode B, and the two second external electrodes Denoted as the second external electrode C and the second external electrode D, and the laminated structure includes 5 conductive layers and 4 dielectric layers. The 5 conductive layers are respectively denoted as conductive layer 1, conductive layer 2, and conductive layer 3. , Conductive layer 4 and conductive layer 5, the four dielectric layers are denoted as dielectric layer 1, dielectric layer 2, dielectric layer 3, and dielectric layer 4, respectively.

If the first external electrode A is electrically connected to the conductive layer 1 and the conductive layer 3, the first external electrode B is electrically connected to the conductive layer 1, the conductive layer 3 and the conductive layer 5, and the second external electrode C is electrically connected The conductive layer 2 and the conductive layer 4, and the second external electrode D is also electrically connected to the conductive layer 2 and the conductive layer 4. For the capacitors corresponding to the first external electrode A and the second external electrode C, the conductive Layer 1 and the conductive layer 2 form a capacitor 1, the capacitance value is denoted as C1, the conductive layer 2 and the conductive layer 3 form a capacitor 2, the capacitance value is denoted as C2, the conductive layer 3 and the conductive layer 4 form a capacitor 3, the capacitance The value is denoted as C3, capacitor 1, capacitor 2 and capacitor 3 are connected in parallel, and the equivalent capacitance i is denoted as Ci, then Ci=C1+C2+C3; then for the first external electrode B and the second external electrode The capacitor corresponding to D, the conductive layer 1 and the conductive layer 2 form a capacitor 1, the capacitance value is denoted as C1, the conductive layer 2 and the conductive layer 3 form a capacitor 2, the capacitance value is denoted as C2, the conductive layer 3 and the conductive layer Layer 4 forms a capacitor 3, the capacitance value is denoted as C3, the conductive layer 4 and the conductive layer 5 form a capacitor 4, the capacitance value is denoted as C4, capacitor 1, capacitor 2, capacitor 3 and capacitor 4 in parallel, its equivalent capacitance j The capacitance value is recorded as Cj, then Cj=C1+C2+C3+C4. Of course, the capacitors corresponding to the first external electrode A and the second external electrode D can also be formed in a similar series-parallel structure, and the capacitors corresponding to the first external electrode B and the second external electrode C can also be formed similarly. The series-parallel structure will not be repeated here. Therefore, the stacked structure 120 can form capacitors with different capacitances.

If the first external electrode A is electrically connected to the conductive layer 1 and the conductive layer 5, the first external electrode B is electrically connected to the conductive layer 3 and the conductive layer 5, and the second external electrode C is electrically connected to the conductive layer 2 and The conductive layer 4 and the second external electrode D are also electrically connected to the conductive layer 4. For the capacitors corresponding to the first external electrode A and the second external electrode C, the conductive layer 1 and the conductive layer 2 form a capacitor 1 , The capacitance value is denoted as C1, the conductive layer 2 and the conductive layer 4 form a capacitor 2, the capacitance value is denoted as C2, the capacitor 1 and the capacitor 2 are in parallel, and the equivalent capacitance i is denoted as Ci, then Ci=C1+ C2; For the capacitor corresponding to the first external electrode B and the second external electrode D, the conductive layer 3 and the conductive layer 4 form a capacitor 3, the capacitance value is denoted as C3, and the conductive layer 4 and the conductive layer 5 form The capacitance value of the capacitor 4 is denoted as C4, the capacitor 3 and the capacitor 4 are connected in parallel, and the capacitance value of the equivalent capacitance j is denoted as Cj, then Cj=C3+C4. Therefore, the stacked structure 120 can form capacitors with different capacitances.

Preferably, the first external electrode 130 is electrically connected to all odd-numbered conductive layers in the multilayer conductive layer; the second external electrode 140 is electrically connected to all even-numbered conductive layers in the multilayer conductive layer. Thus, the effect of the laminated structure of increasing the capacitance density of the capacitor can be fully exerted.

If the first external electrode A is electrically connected to the conductive layer 1, the conductive layer 3 and the conductive layer 5, and the first external electrode B is electrically connected to the conductive layer 1, the conductive layer 3 and the conductive layer 5, the second The external electrode C is electrically connected to the conductive layer 2 and the conductive layer 4, and the second external electrode D is also electrically connected to the conductive layer 2 and the conductive layer 4, so the first external electrode A corresponds to the second external electrode C The conductive layer 1 and the conductive layer 2 form a capacitor 1, the capacitance value is denoted as C1, the conductive layer 2 and the conductive layer 3 form a capacitor 2, the capacitance value is denoted as C2, the conductive layer 3 and the conductive layer 4 A capacitor 3 is formed, the capacitance value is denoted as C3, the conductive layer 4 and the conductive layer 5 form a capacitor 4, the capacitance value is denoted as C4, the capacitor 1, the capacitor 2, the capacitor 3 and the capacitor 4 are connected in parallel, and the equivalent capacitance i is Marked as Ci, then Ci=C1+C2+C3+C4; then for the capacitor corresponding to the first external electrode B and the second external electrode D, the conductive layer 1 and the conductive layer 2 form a capacitor 1, and the capacitance is recorded C1, the conductive layer 2 and the conductive layer 3 form a capacitor 2, the capacitance value is denoted as C2, the conductive layer 3 and the conductive layer 4 form a capacitor 3, the capacitance value is denoted as C3, the conductive layer 4 and the conductive layer 5 The capacitor 4 is formed, the capacitance value is denoted as C4, the capacitor 1, the capacitor 2, the capacitor 3 and the capacitor 4 are connected in parallel, and the capacitance value of the equivalent capacitance j is denoted as Cj, then Cj=C1+C2+C3+C4.

Optionally, in some embodiments, the substrate 170 is made of a conductive material, and the third external electrode 150 is electrically connected to the conductive layer of the multilayer conductive layer that is in contact with the substrate 170 through the substrate 170 . Specifically, as shown in FIG. 7, the third external electrode 150 is electrically connected to the conductive layer 21 through the substrate 170, and the fourth external electrode 160 is electrically connected to the conductive layer 22 through the fourth conductive via structure 212.

Optionally, as an example, as shown in FIG. 8, the capacitor P and the capacitor Q have the same structure as the capacitor 100 shown in FIG. 1, and the capacitor P and the capacitor Q are stacked vertically, and the capacitor Q is located above the capacitor P, The external electrode located on the upper surface of the capacitor P is electrically connected to the external electrode located on the lower surface of the capacitor Q. The capacitance value of the capacitor P is recorded as Cp, the capacitance value of the capacitor Q is recorded as Cq, and the capacitor P and the capacitor Q are connected in parallel. The capacitance value is recorded as C0, then C0=Cp+Cq.

It should be noted that Figure 8 is a use method after the capacitor chip (capacitor) is prepared. It can be understood that the purpose of preparing four external electrodes is to retain the interface that can be directly combined with other independent capacitor chips to form a larger capacitance. If there are not two more external electrodes, then you need to make additional connection lines on the circuit board to connect the two capacitor chips in parallel, so that the horizontal direction occupies the area (that is, the printed circuit board (Printed Circuit Board, PCB) area) Large, vertical stacking can save PCB board area.

Therefore, in the embodiments of the present application, the multi-wing structure is used as the skeleton, and the laminated structure is arranged on the multi-wing structure, so that the surface area of the laminated structure can be increased, and the result can be obtained with a smaller device size (capacitor chip size). Larger capacitance value increases the capacitance value density of the capacitor, and multiple electrodes of the capacitor are arranged on the front and back sides of the capacitor, so that a double-sided capacitor can be prepared based on a multi-wing structure, which facilitates the vertical stacking of the capacitor with Other capacitors are connected in parallel to meet different application requirements. Further, in the embodiments of the present application, compared to a solid support structure, the support structure in the present application is a hollow structure, which can have a larger surface area, and compared to a columnar support structure, the wing-shaped structure in the present application It is the convex structure formed on the outer side wall of the support structure, that is, the wing-like support is formed on the outer side wall of the support structure, so that the surface area of the multi-wing structure can be increased. In this application, the laminated structure covers the multi-wing structure. As the surface area of the wing structure increases, the surface area of the laminated structure also increases correspondingly, which can further increase the capacitance density of the capacitor.

Optionally, an embodiment of the present application further provides a capacitor structure 300, the capacitor structure 300 includes: a first capacitor 310 and a second capacitor 320, the first capacitor 310 and the second capacitor 320 have the same as the above-mentioned capacitor 100 Structure, the second capacitor 320 is located above the first capacitor 310.

Wherein, the first capacitor 310 includes an external electrode 311, an external electrode 312, an external electrode 313, and an external electrode 314, and the external electrode 311 and the external electrode 312 are located on the upper surface of the first capacitor 310, the external electrode 313 and the external electrode 313 The external electrode 314 is located on the bottom surface of the first capacitor 310. The second capacitor 320 includes an external electrode 321, an external electrode 322, an external electrode 323, and an external electrode 324, and the external electrode 321 and the external electrode 322 are located on the upper surface of the second capacitor 320, the external electrode 323 and the external electrode 324 is located on the bottom surface of the second capacitor 320. Specifically, the external electrode 311 of the first capacitor 310 is electrically connected to the external electrode 323 of the second capacitor 320, and the external electrode 312 of the first capacitor 310 is electrically connected to the external electrode 324 of the second capacitor 320, as shown in FIG. 9 Shown.

It should be noted that the external electrode 311, the external electrode 312, the external electrode 313, and the external electrode 314 of the first capacitor 310 are respectively the first external electrode 130, the second external electrode 140, and the third external electrode of the capacitor 100 in FIG. 150 and the fourth external electrode 160. Similarly, the external electrode 321, the external electrode 322, the external electrode 323 and the external electrode 324 of the second capacitor 320 are respectively the first external electrode 130, the second external electrode 140, the third external electrode 150 and the external electrode 324 of the capacitor 100 shown in FIG. The fourth external electrode 160.

Optionally, in some embodiments, the capacitor structure 300 further includes: a third capacitor 330 having the same structure as the capacitor 100 described above, and the third capacitor 330 is located below the first capacitor 310. Wherein, the third capacitor 330 includes an external electrode 331, an external electrode 332, an external electrode 333, and an external electrode 334, and the external electrode 331 and the external electrode 332 are located on the upper surface of the third capacitor 330, the external electrode 333 and the external electrode The external electrode 334 is located on the lower surface of the third capacitor 330. Specifically, the external electrode 313 of the first capacitor 310 is electrically connected to the external electrode 331 of the third capacitor 330, and the external electrode 314 of the first capacitor 310 is electrically connected to the external electrode 332 of the third capacitor 330.

It should be noted that the external electrode 331, the external electrode 332, the external electrode 333, and the external electrode 334 of the third capacitor 330 are respectively the first external electrode 130, the second external electrode 140, and the third external electrode of the capacitor 100 in FIG. 150 and the fourth external electrode 160.

It should also be noted that the third capacitor 330 is not shown in the figure, it can refer to the layout of the first capacitor 310 and the second capacitor 320 in FIG. 9, that is, on the basis of FIG. The third capacitor 330 is also arranged under 310.

It should be noted that the capacitor structure in this application is a method of use after the capacitor chip (capacitor) is prepared. It can be understood that the purpose of preparing four external electrodes is to retain the direct combination with other independent capacitor chips to form a larger If there are no more two external electrodes for the capacitor interface, then you need to make another connection line on the circuit board to connect the two capacitor chips in parallel, so that the horizontal direction (that is, the PCB area) is large, and the vertical direction is stacked. In this case, PCB board area can be saved.

The capacitors according to the embodiments of the present application are described above, and the method for preparing the capacitors according to the embodiments of the present application is described below. The method for preparing a capacitor of the embodiment of the present application can prepare the capacitor of the foregoing embodiment of the present application, and the following embodiment and the related description in the foregoing embodiment can be referred to each other.

Hereinafter, in conjunction with FIG. 10, the manufacturing method of the capacitor of the embodiment of the present application will be described in detail.

It should be understood that FIG. 10 is a schematic flowchart of a method for manufacturing a capacitor in an embodiment of the present application, but these steps or operations are only examples, and the embodiment of the present application may also perform other operations or variations of each operation in FIG. 10.

FIG. 10 shows a schematic flowchart of a method 400 for manufacturing a capacitor according to an embodiment of the present application. As shown in FIG. 10, the manufacturing method 400 of the capacitor includes:

410. Prepare a multi-wing structure above the substrate, the multi-wing structure including multiple groups of wing-like structures and multiple supporting structures, wherein each wing-like structure in each group of wing-like structures is arranged in parallel, the supporting structure is a hollow structure, and the wing-like structure The structure is a convex structure formed by extending the outer side wall of the supporting structure in a first direction, and the first direction is a direction perpendicular to the side wall of the supporting structure;

420. Prepare a laminated structure on the surface of the multi-wing structure, the laminated structure covering the multi-wing structure, the laminated structure including at least one dielectric layer and a plurality of conductive layers, the at least one dielectric layer and the multilayer The conductive layer forms a structure in which the conductive layer and the dielectric layer alternate with each other;

430. Prepare at least one first external electrode and at least one second external electrode, wherein the first external electrode and the second external electrode are located above the multi-wing structure, and the first external electrode is electrically connected to the multilayer conductive Part or all of the odd-numbered conductive layers in the layer, and the second external electrode is electrically connected to part or all of the even-numbered conductive layers in the multilayer conductive layer;

440. Prepare at least one third external electrode and at least one fourth external electrode, wherein the third external electrode and the fourth external electrode are located under the multi-wing structure, and the third external electrode is electrically connected to the multilayer conductive Part or all of the odd-numbered conductive layers in the layer, and the fourth external electrode is electrically connected to part or all of the even-numbered conductive layers in the multilayer conductive layer.

Specifically, based on the above steps 410-440, a capacitor as shown in FIG. 1 can be prepared, a capacitor based on a multi-wing structure as shown in FIG. 2 to FIG. 6 can also be prepared, and a capacitor as shown in FIG. The capacitor P and the capacitor Q shown in FIG. 8. In addition, based on the above steps 410-440, the capacitor structure shown in FIG. 9 can also be prepared, which is not limited in this application.

It should be understood that the upper surface of each material layer described in steps 410-440 refers to the surface of the material layer that is substantially parallel to the upper surface of the substrate.

It should be noted that the first direction may be a direction parallel to the substrate 170, or the first direction may be a direction perpendicular to the normal line of the substrate 170.

Optionally, in some embodiments, the foregoing step 410 may specifically be:

A multi-layer structure is prepared over the substrate 170. The multi-layer structure includes a multi-layer first material layer 10 and a multi-layer second material layer 20. The multi-layer first material layer 10 and the multi-layer second material layer 20 form a first material layer. A structure in which a material layer 10 and a second material layer 20 alternate with each other, the first material is different from the second material, and the first material layer 10 is in direct contact with the substrate 170;

Based on the multi-layer structure, prepare a plurality of trenches (that is, the multi-layer structure at the position of the trench is removed), and deposit the second layer on the upper surface of the multi-layer structure, the bottom of the plurality of trenches, and the inner sidewalls. A material (that is, a continuous first material layer is formed on a multi-layered structure with grooves) to form a plurality of hollow columnar first structures 31 made of the first material, as the support structure 112 Basically, in this step, a plurality of first structures 31 are connected to each other, and the first structures 31 extend in a direction perpendicular to the substrate 170 and enter the substrate 170;

In the remaining multi-layer structure, a plurality of second structures 32 in a groove shape extending in a direction perpendicular to the substrate 170 are prepared, that is, the multi-layer structure where the second structures 32 are located, including the multi-layer structure. The first material deposited on the structure is removed. At this time, the plurality of first structures 31 are separated by the plurality of second structures, and the second structures 32 extend to the substrate 170 along a direction perpendicular to the substrate 170. The upper surface of

Removing the second material layer 20 exposed in the plurality of second structures 32, or using the second structure 32 as a work entrance, removing the remaining second material layer 20 and leaving the first material layer 10;

The substrate 170 is thinned to form the multi-wing structure 110.

The deposition method of the first material and the second material mentioned above is preferably chemical vapor deposition (CVD), or spin coating, spray coating, thermal oxidation, epitaxy, physical vapor deposition (PVD), atomic layer deposition (ALD), epitaxial growth And many other processes.

Optionally, the stacked structure 120 may be formed on the multi-wing structure 110 using various processes such as thermal oxidation, atomic layer deposition (ALD), chemical vapor deposition (Chemical Vapor Deposition, CVD).

It should be understood that, relative to the first material, the second material can be selectively removed. Specifically, in the same corrosion or etching environment, the difference in the corrosion (or etching) rate of the first material and the second material is greater than 5 times. That is, in the same corrosion or etching environment, the corrosion (or etching) rate of the second material is at least 5 times the corrosion (or etching) rate of the first material, so it can be achieved by controlling the choice of etching material and time The second material is removed and the first material is retained.

Optionally, in some embodiments, part or all of the conductive layers in the multilayer conductive layer are conformal to the multi-wing structure 110.

Optionally, in some embodiments, a part of the conductive layer of the multilayer conductive layer is conformal to the multi-wing structure 110, and another part of the conductive layer is complementary to the multi-wing structure 110 in shape.

Optionally, in some embodiments, a single wing-like structure 111 in the plurality of groups of wing-like structures 111 includes a plurality of wings 11 extending along the first direction.

Optionally, in some embodiments, the support structure 112 of the plurality of support structures 112 is provided with at least one shaft 12 in the hollow area thereof, and the shaft 12 is parallel to the side wall of the support structure 112.

Optionally, in some embodiments, the capacitor further includes: a ring structure 113 located outside the plurality of support structures 112 and the plurality of sets of wing-like structures 111.

Optionally, the ring structure 113 is formed by alternately stacking multiple first material layers 10 and multiple second material layers 20. Specifically, the thickness of the first material layer 10 and the second material layer 20 can be adjusted according to the capacitance, frequency characteristics, loss and other requirements of the capacitor.

Optionally, the multiple sets of wing-shaped structures 111 and the multiple supporting structures 112 are formed of the first material.

It should be noted that, for the first material and the second material, reference may be made to the description of the capacitor 100 described above. For the sake of brevity, details are not repeated here.

Optionally, in some embodiments, the multi-wing structure 110 is made of a conductive material, and the second external electrode 140 is electrically connected to the multi-wing structure 110.

Optionally, the multi-wing structure 110 is formed of a material with a resistivity less than a threshold value, or a heavily doped conductive layer or a heavily doped conductive region is formed on the surface of the multi-wing structure 110.

Optionally, the multi-wing structure 110 includes a main body material and a conductive layer or conductive area on the surface of the main body material, and the second external electrode 140 is electrically connected to the multi-wing structure 110 by being electrically connected to the conductive layer or conductive area.

Optionally, in some embodiments, the method 400 further includes:

The isolation ring 180 is prepared, wherein the isolation ring 180 is located above the outer side of the plurality of support structures 112, and the isolation ring 180 is used to separate the laminated structure 120 into two parts, an inner side and an outer side, and the first external electrode 130 The second external electrode 140 is only electrically connected to the part of the laminated structure 120 located inside the isolation ring 180, and the third external electrode 150 and the fourth external electrode 160 are only electrically connected to the laminated structure 120 located in the isolation ring. The inner part of 180 is electrically connected.

Optionally, the isolation ring 180 is located above the ring structure 113.

Optionally, in some embodiments, the method 400 further includes:

Preparing at least one first conductive via structure 201 and at least one second conductive via structure 202;

Wherein, the first conductive via structure 201 is located in the isolation ring 180, and the second conductive via structure 202 is located outside the isolation ring 180 near the center of the capacitor 100, or the first conductive via structure 201 And/or the second conductive via structure 202 is located outside the isolation ring 180 near the center of the capacitor 100;

The first external electrode 130 is electrically connected to part or all of the odd-numbered conductive layers in the multilayer conductive layer through the at least one first conductive via structure 201, and the second external electrode 140 is electrically connected to the at least one second conductive via through the at least one second conductive via. Part or all of the even-numbered conductive layers in the multilayer conductive layer to which the structure 202 is electrically connected.

Optionally, in some embodiments, the method 400 further includes:

A filling structure 190 is prepared. The filling structure 190 covers the laminated structure 120 and fills the voids formed by the laminated structure 120.

Optionally, in some embodiments, the wing-shaped structure 111 of the plurality of groups of wing-shaped structures 111 that is in contact with the substrate 170 has a discontinuous area between different supporting structures 112.

Optionally, in some embodiments, the wing-shaped structure 111 of the plurality of groups of wing-shaped structures 111 that is in contact with the substrate 170 has a discontinuous area between different support structures 112, and the substrate 170 is located at the discontinuous area. A substrate trench 171 is formed, and the stacked structure 120 is further disposed in the substrate trench 171.

Optionally, in some embodiments, the supporting structure 112 penetrates the substrate 170 so that the lower surface of the substrate 170 exposes the laminated structure 120. Optionally, the third external electrode 150 and/or the fourth external electrode 160 are electrically connected to a region of the multilayer conductive layer located in the support structure 112.

Optionally, in some embodiments, the substrate 170 is made of a conductive material, and the third external electrode 150 is electrically connected to the conductive layer of the multilayer conductive layer that is in contact with the substrate 170 through the substrate 170.

Optionally, in some embodiments, the method 400 further includes:

A first interconnection structure 200 is prepared, wherein the first interconnection structure 200 is located above the multi-wing structure 110, and the first external electrode 130 and/or the second external electrode 140 are electrically connected to the multi-wing structure through the first interconnection structure 200. The conductive layer in the conductive layer.

Optionally, the first interconnect structure 200 includes at least one first insulating layer 203, at least one first conductive via structure 201, and at least one second conductive via structure 202, wherein the at least one first insulating layer 203 is located Above the multi-wing structure 110, the first conductive via structure 201 and the second conductive via structure 202 penetrate the at least one first insulating layer 203, and the first external electrode 130 passes through the at least one first conductive via The structure 201 is electrically connected to part or all of the odd-numbered conductive layers in the multilayer conductive layer, and the second external electrode 140 is electrically connected to a part or part of the multilayer conductive layer through the at least one second conductive via structure 202. All even-numbered conductive layers.

Optionally, the at least one first insulating layer 203 may be formed by spin coating, spray coating, physical vapor deposition (PVD), chemical vapor deposition (CVD), or other processes.

Optionally, the first conductive via structure 201 and the second conductive via structure 202 can be formed by processes such as PVD, Metal-organic Chemical Vapor Deposition (MOCVD), ALD, etc. in the via.

Optionally, in some embodiments, the method 400 further includes:

A second interconnection structure 210 is prepared, wherein the second interconnection structure 210 is located under the multi-wing structure 110, and the third external electrode 150 and/or the fourth external electrode 160 are electrically connected to the multi-wing structure through the second interconnection structure 210. The conductive layer in the conductive layer.

Optionally, the second interconnection structure 210 includes at least one second insulating layer 213, at least one third conductive via structure 211, and at least one fourth conductive via structure 212, wherein the at least one second insulating layer 213 is located at Below the multi-wing structure 110, the third conductive via structure 211 and the fourth conductive via structure 212 penetrate the at least one second insulating layer 213, and the third external electrode 150 passes through the at least one third conductive via The structure 211 is electrically connected to part or all of the odd-numbered conductive layers in the multilayer conductive layer, and the fourth external electrode 160 is electrically connected to a part or part of the multilayer conductive layer through the at least one fourth conductive via structure 212. All even-numbered conductive layers.

Optionally, the at least one second insulating layer 213 may be formed by spin coating, spray coating, physical vapor deposition (PVD), chemical vapor deposition (CVD), or other processes.

Optionally, the third conductive via structure 211 and the fourth conductive via structure 212 may be formed by using PVD, Metal-organic Chemical Vapor Deposition (MOCVD), ALD, and other processes in the via.

Optionally, in some embodiments, the foregoing step 430 may specifically be:

A first electrode layer is prepared above the laminated structure 120. The first electrode layer includes at least one first conductive region and at least one second conductive region that are separated from each other. The first conductive region forms the first external electrode 130, The second conductive area forms the second external electrode 140.

Optionally, the first external electrode 130 and/or the second external electrode 140 may be formed by PVD, electroplating, electroless plating, and other processes.

Optionally, in some embodiments, the foregoing step 440 may specifically be:

A second electrode layer is prepared under the multi-wing structure 110. The second electrode layer includes at least one third conductive region and at least one fourth conductive region that are separated from each other. The third conductive region forms the third external electrode 150, The fourth conductive area forms the fourth external electrode 160.

Optionally, the third external electrode 150 and/or the fourth external electrode 160 may be formed by PVD, electroplating, electroless plating, and other processes.

Optionally, in one embodiment, it is assumed that the stacked structure 120 includes two conductive layers and one dielectric layer. In this embodiment, the above steps 410 to 440 may specifically be the preparation process shown in step a to step o (FIGS. 11a-11o), and the capacitor 100 shown in FIG. 1 may be prepared. In addition, the capacitor 100 prepared based on the multi-wing structure shown in FIGS. 2 to 6 can also be prepared, and the capacitor shown in FIG. 7 and the capacitor P and the capacitor Q shown in FIG. 8 can also be prepared. In addition, based on the above steps 410-440 can also prepare the capacitor structure as shown in FIG. 9, which can refer to the capacitor preparation process shown in steps a to o (FIGS. 11a-11o). For the sake of brevity, details are not repeated here.

Step a, a silicon wafer is selected as the

substrate

170, and 3 layers of the

first material layer

10 and 3 layers of the second material layer 20 are alternately deposited on the upper surface of the substrate 170 using a CVD process to form a multilayer structure, the first material layer 10 In direct contact with the substrate 170, as shown in FIG. 11a, for example, the first material is silicon oxide, and the second material is silicon nitride;

Step b, spin-coating a layer of photoresist on the surface of the multilayer structure, open several gaps in the photoresist after exposure and development, and then use the photoresist as a mask, and use a dry etching process to remove uncovered photoresist The film structure (the first material layer 10 and the second material layer 20), forming three first structures 31 extending along the direction perpendicular to the substrate 170 and entering the hollow columnar and/or grooved shapes of the substrate 170 , And finally remove the photoresist, as shown in Figure 11b;

Step c, using a CVD process to deposit a first material on the upper surface of the multilayer structure, the bottom and inner sidewalls of the three first structures 31, as shown in FIG. 11c;

Step d, using photolithography combined with a dry etching process, in the gap of the first structure 31, a hollow columnar shape and/or a groove shape extending along a direction perpendicular to the substrate 170 and extending to the upper surface of the substrate 170 are formed in the gaps of the first structure 31 The 2 second structures 32, as shown in Figure 11d;

Step e, using two second structures 32 as release holes, and using a hot phosphoric acid solution as an etchant to remove the second material layer (silicon nitride) in contact with the release holes, as shown in FIG. 11e;

Step f, using the ALD process, deposit a layer of TiN as the conductive layer 21 on the surface of the multi-wing structure 110, then deposit a layer of aluminum oxide as the dielectric layer 23, and finally deposit a layer of TiN as the conductive layer 22, as shown in FIG. 11f;

Step g, using a CVD process to deposit silicon oxide as the filling structure 190, filling and covering the entire multi-wing structure 110, as shown in FIG. 11g; alternatively, the MOCVD process can also be used to deposit metal tungsten as the filling structure 190; of course , Step g may not be present, and directly use the conductive layer 22 in step f to fill all the gaps;

Step h, spin-coating a layer of photoresist on the surface of the filling structure 190, open a closed ring-shaped notch of the photoresist after exposure and development, and then use a dry etching process to remove the filling material and the conductive layer 22 in the notch to expose The dielectric layer 23 forms a ring-shaped trench 30 and a number of conductive trenches 35, as shown in FIG. 11h; of course, while preparing the ring-shaped trench 30, the conductive trench 35 may not be prepared;

Step i, using a plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) process to deposit a layer of insulating material USG as the first insulating layer 203, and fill the annular trench 30 and the conduction trench 35 Full, the isolation ring 180 and the conducting structure 181 are formed respectively, as shown in FIG. 11i;

Step j, using photolithography combined with a dry etching process to prepare a plurality of first vias 40 located in the inner region of the isolation ring 180, some of the first vias 40 are located in the via structure 181 and penetrate the first insulation The conductive layer 21 is exposed at the bottom of the layer 203 and the dielectric layer 23; the other first via holes 40 penetrate the first insulating layer 203 and the filling structure 170, and the conductive layer 22 is exposed at the bottom, as shown in FIG. 11j;

Step k, using a physical vapor deposition (Physical Vapor Deposition, PVD) process to deposit a layer of TiN as a barrier layer and adhesion layer on the inner walls of the plurality of first via holes 40, and then use the MOCVD process to connect the plurality of first via holes 40 Fill metal tungsten to form a first conductive via structure 201 and a second conductive via structure 202; then, a chemical mechanical polishing (CMP) process is used to remove the excess conductive material on the surface of the first insulating layer 203; , Using the PVD process to deposit a layer of Ti/TiN and a layer of metal aluminum on the surface of the ground first insulating layer 203; finally, using photolithography combined with an etching process to pattern the Ti/TiN/Al to obtain a capacitor One first external electrode 130 and one second external electrode 140, as shown in FIG. 11k;

Step 1. Turn the silicon wafer (substrate 170) over, first use a grinding wheel to thin the substrate 170 to be close to the first structure 31, and then use a plasma dry etching process to selectively remove silicon to expose the first structure The bottom of 31, as shown in Figure 11l;

Step m, using a plasma dry etching process to selectively remove the silicon oxide at the bottom of the first structure 31 to expose the conductive layer 21, as shown in FIG. 11m;

Step n, coating a layer of photoresist on the back of the substrate 170, after exposing and developing, opening several photoresist windows to expose part of the conductive layer 21, and using a wet etching process to remove the exposed conductive layer of the photoresist window 21. Expose the dielectric layer 23, as shown in FIG. 11n;

Step o, depositing a layer of insulating material USG as the second insulating layer 213 on the back of the substrate 170 by using a PECVD process, and using photolithography combined with an etching process to prepare a plurality of second via holes 50, and some second via holes 50 The conductive layer 21 is exposed, and some of the second vias 50 expose the conductive layer 22; the plurality of second vias 50 are filled with conductive material to form a third conductive via structure 211 and a fourth conductive via The structure 212 is shown in FIG. 11o; finally, a layer of Ti/TiN and a layer of metal aluminum are deposited on the surface of the second insulating layer 213 using the PVD process, and the Ti/TiN/Al is patterned using photolithography combined with an etching process , A third external electrode 150 and a fourth external electrode 160 of the capacitor are obtained, and the capacitor 100 as shown in FIG. 1 is obtained.

It should be noted that the shapes of the different first structures 31 among the above three first structures 31 may be the same or different, which is not limited in this application. In the same way, the shapes of the different second structures 32 in the above two second structures 32 may be the same or different, which is not limited in the present application.

Therefore, in the manufacturing method of the capacitor provided in the embodiments of the present application, by preparing a multi-wing structure, and using the multi-wing structure as a skeleton, a laminated structure is arranged on the multi-wing structure, so that the surface area of the laminated structure can be increased, and the surface area of the laminated structure can be increased. In the case of a smaller device size (capacitor chip size), a larger capacitance value can be obtained, and the capacitance density of the capacitor can be improved, and multiple electrodes of the capacitor are set on the front and back sides of the capacitor, so that it can be prepared based on a multi-wing structure Double-sided capacitors are convenient to vertically stack capacitors in parallel with other capacitors to meet different application requirements. Further, in the embodiments of the present application, compared to a solid support structure, the support structure in the present application is a hollow structure, which can have a larger surface area, and compared to a columnar support structure, the wing-shaped structure in the present application It is the convex structure formed on the outer side wall of the support structure, that is, the wing-like support is formed on the outer side wall of the support structure, so that the surface area of the multi-wing structure can be increased. In this application, the laminated structure covers the multi-wing structure. As the surface area of the wing structure increases, the surface area of the laminated structure also increases correspondingly, which can further increase the capacitance density of the capacitor.

A person of ordinary skill in the art may realize that the preferred embodiments of the application are described in detail above with reference to the accompanying drawings. However, the application is not limited to the specific details in the foregoing embodiments. Within the scope of the technical concept of the application, the application can be The technical solution of, has undergone a variety of simple modifications, and these simple modifications all fall within the scope of protection of the present application.

In addition, it should be noted that the various specific technical features described in the above-mentioned specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, this application provides various possible The combination method will not be explained separately.

In addition, various different implementations of this application can also be combined arbitrarily, as long as they do not violate the idea of this application, they should also be regarded as the content applied for in this application.

Claims

A capacitor, characterized in that it comprises:

A laminated structure, the laminated structure comprising at least one dielectric layer and a plurality of conductive layers, the at least one dielectric layer and the multilayer conductive layer form a structure in which the conductive layer and the dielectric layer alternate with each other;

At least one first external electrode and at least one second external electrode, wherein the first external electrode and the second external electrode are located above the laminated structure, and the first external electrode is electrically connected to the multiple Part or all of the odd-numbered conductive layers in the conductive layer, and the second external electrode is electrically connected to part or all of the even-numbered conductive layers in the multilayer conductive layer;

At least one third external electrode and at least one fourth external electrode, wherein the third external electrode and the fourth external electrode are located below the laminated structure, and the third external electrode is electrically connected to the multiple Part or all of the odd-numbered conductive layers in the conductive layer, and the fourth external electrode is electrically connected to part or all of the even-numbered conductive layers in the multilayer conductive layer.
The capacitor according to claim 1, wherein the capacitor further comprises:

A multi-wing structure, wherein the laminated structure covers the multi-wing structure.
The capacitor according to claim 2, wherein the multi-wing structure comprises multiple groups of wing-like structures and multiple supporting structures, wherein each wing-like structure in each group of wing-like structures is arranged in parallel, and the supporting structure is hollow Structure, the wing-like structure is a convex structure formed by extending the outer side wall of the support structure in a first direction, and the first direction is a direction perpendicular to the side wall of the support structure.
The capacitor according to claim 3, wherein part or all of the conductive layers in the multilayer conductive layer are conformal to the multi-wing structure.
The capacitor according to claim 3, wherein a part of the conductive layer in the multi-layer conductive layer is conformal to the multi-wing structure, and the other part of the conductive layer is complementary in shape to the multi-wing structure.
The capacitor according to any one of claims 3 to 5, wherein a single wing structure in the plurality of groups of wing structures includes a plurality of wings extending along the first direction.
The capacitor according to any one of claims 3 to 6, wherein the supporting structure of the plurality of supporting structures is provided with at least one shaft in the hollow area thereof, and the shaft is connected to the side wall of the supporting structure. parallel.
The capacitor according to any one of claims 3 to 7, further comprising:

The isolation ring is located above the outer side of the plurality of support structures, and the isolation ring is used to separate the laminated structure into two parts, an inner side and an outer side. The first external electrode and the second external electrode are only It is electrically connected to the part of the laminated structure located inside the isolation ring, and the third external electrode and the fourth external electrode are only electrically connected to the part of the laminated structure located inside the isolation ring .
The capacitor according to claim 8, further comprising:

At least one first conductive via structure and at least one second conductive via structure, wherein

The first conductive via structure is located in the isolation ring, and the second conductive via structure is located outside the isolation ring near the center of the capacitor; or, the first conductive via structure and/ Or the second conductive via structure is located outside the isolation ring near the center of the capacitor;

The first external electrode is electrically connected to some or all of the odd-numbered conductive layers in the multilayer conductive layer through the at least one first conductive via structure, and the second external electrode is electrically connected to the at least one second conductive layer through the at least one second conductive layer. Part or all of the even-numbered conductive layers in the multilayer conductive layers to which the via structure is electrically connected.
The capacitor according to any one of claims 3 to 9, wherein the capacitor further comprises: a ring structure, the ring structure is located outside the plurality of support structures and the groups of wing-like structures .
The capacitor according to claim 10, wherein the ring structure is formed by alternately stacking multiple first material layers and multiple second material layers.
The capacitor of claim 11, wherein the plurality of wing-like structures and the plurality of support structures are formed of the first material.
The capacitor according to any one of claims 3 to 12, wherein the multi-wing structure is made of conductive material, and the second external electrode is electrically connected to the multi-wing structure.
The capacitor according to any one of claims 3 to 12, wherein the multi-wing structure comprises a main body material and a conductive layer or a conductive area on the surface of the main body material, and the second external electrode passes through the main body material and the main body material. The conductive layer or conductive area on the surface of the material is electrically connected to the electrical connection of the multi-wing structure.
The capacitor according to any one of claims 3 to 14, further comprising: a filling structure that covers the laminated structure and fills the void formed by the laminated structure.
The capacitor according to any one of claims 3 to 15, wherein the capacitor further comprises: a substrate disposed under the multi-wing structure.
The capacitor according to claim 16, wherein the wing-shaped structure in contact with the substrate in the plurality of groups of wing-shaped structures has a discontinuous area between different supporting structures.
18. The capacitor according to claim 17, wherein the substrate forms a substrate trench at the discontinuous region, and the stacked structure is further disposed in the substrate trench.
The capacitor according to any one of claims 16 to 18, wherein the supporting structure penetrates the substrate, so that the lower surface of the substrate exposes the laminated structure.
The capacitor according to claim 19, wherein the third external electrode and/or the fourth external electrode are electrically connected to a region of the multilayer conductive layer located in the support structure.
The capacitor according to any one of claims 16 to 20, wherein the substrate is made of a conductive material, and the third external electrode is electrically connected to the multilayer conductive layer through the substrate A conductive layer in contact with the substrate.
The capacitor according to any one of claims 2 to 21, wherein the first external electrode and/or the second external electrode are electrically connected to the first interconnection structure located above the multi-wing structure The conductive layer in the multilayer conductive layer.
The capacitor according to claim 22, wherein the first interconnection structure comprises at least one first insulating layer, at least one first conductive via structure and at least one second conductive via structure, wherein the at least A first insulating layer is located above the multi-wing structure, the first conductive via structure and the second conductive via structure penetrate the at least one first insulating layer, and the first external electrode passes through the At least one first conductive via structure is electrically connected to some or all of the odd-numbered conductive layers in the multilayer conductive layer, and the second external electrode is electrically connected to the at least one second conductive via structure. Part or all of the even-numbered conductive layers in the multilayer conductive layer.
The capacitor according to any one of claims 2 to 23, wherein the third external electrode and/or the fourth external electrode are electrically connected to a second interconnection structure located under the multi-wing structure The conductive layer in the multilayer conductive layer.
The capacitor according to claim 24, wherein the second interconnection structure comprises at least one second insulating layer, at least one third conductive via structure, and at least one fourth conductive via structure, wherein the at least A second insulating layer is located under the multi-wing structure, the third conductive via structure and the fourth conductive via structure penetrate the at least one second insulating layer, and the third external electrode passes through the At least one third conductive via structure is electrically connected to some or all of the odd-numbered conductive layers in the multilayer conductive layer, and the fourth external electrode is electrically connected to the at least one fourth conductive via structure through the at least one fourth conductive via structure. Part or all of the even-numbered conductive layers in the multilayer conductive layer.
The capacitor according to any one of claims 1 to 25, further comprising: a first electrode layer disposed above the laminated structure, and the first electrode layer includes at least one first electrode layer separated from each other. A conductive region and at least one second conductive region, the first conductive region forms the first external electrode, and the second conductive region forms the second external electrode.
The capacitor according to any one of claims 1 to 26, further comprising: a second electrode layer disposed under the laminated structure, and the second electrode layer includes at least one first electrode layer separated from each other. Three conductive regions and at least one fourth conductive region, the third conductive region forms the third external electrode, and the fourth conductive region forms the fourth external electrode.
The capacitor according to any one of claims 1 to 27, wherein the conductive layer in the multilayer conductive layer includes at least one of the following:

Heavily doped polysilicon layer, metal silicide layer, carbon layer, conductive polymer layer, aluminum layer, copper layer, nickel layer, tantalum nitride layer, titanium nitride layer, aluminum titanium nitride layer, tantalum silicon nitride layer, Tantalum carbon nitride layer.
The capacitor according to any one of claims 1 to 28, wherein the dielectric layer in the at least one dielectric layer comprises at least one of the following:

Silicon oxide layer, silicon nitride layer, silicon oxynitride layer, metal oxide layer, metal nitride layer and metal oxynitride layer.
A capacitor structure, characterized by comprising: a first capacitor and a second capacitor, wherein the first capacitor and the second capacitor are the capacitors according to any one of claims 1 to 29, and the The second capacitor is located above the first capacitor, and the first external electrode of the first capacitor is electrically connected to the third external electrode of the second capacitor, and the second external electrode of the first capacitor is electrically connected to the third external electrode of the second capacitor. The fourth external electrode of the second capacitor is electrically connected.
The capacitor structure according to claim 30, wherein the capacitor structure further comprises: a third capacitor, the third capacitor being the capacitor according to any one of claims 1 to 29, the third capacitor The capacitor is located below the first capacitor, and the third external electrode of the first capacitor is electrically connected to the first external electrode of the third capacitor, and the fourth external electrode of the first capacitor is electrically connected to the third external electrode. The second external electrode of the capacitor is electrically connected.
A method for manufacturing a capacitor, which is characterized in that it comprises:

A laminated structure is prepared over the substrate, the laminated structure includes at least one dielectric layer and a plurality of conductive layers, the at least one dielectric layer and the multilayer conductive layer form a structure in which the conductive layer and the dielectric layer alternate with each other ；

At least one first external electrode and at least one second external electrode are prepared, wherein the first external electrode and the second external electrode are located above the laminated structure, and the first external electrode is electrically connected to the Part or all of the odd-numbered conductive layers in the multilayer conductive layer, and the second external electrode is electrically connected to part or all of the even-numbered conductive layers in the multilayer conductive layer;

At least one third external electrode and at least one fourth external electrode are prepared, wherein the third external electrode and the fourth external electrode are located below the laminated structure, and the third external electrode is electrically connected to the Part or all of the odd-numbered conductive layers in the multilayer conductive layer, and the fourth external electrode is electrically connected to part or all of the even-numbered conductive layers in the multilayer conductive layer.
The method according to claim 32, wherein the method further comprises:

A multi-wing structure is prepared above the substrate, and the laminated structure covers the multi-wing structure.
The method according to claim 33, wherein the multi-wing structure comprises multiple groups of wing-like structures and multiple supporting structures, wherein each wing-like structure in each group of wing-like structures is arranged in parallel, and the supporting structure is hollow Structure, the wing-like structure is a convex structure formed by extending the outer side wall of the support structure in a first direction, and the first direction is a direction perpendicular to the side wall of the support structure.
The method of claim 34, wherein the preparing a multi-wing structure above the substrate comprises:

A multi-layer structure is prepared over the substrate, the multi-layer structure includes a multi-layer first material layer and a multi-layer second material layer, the multi-layer first material layer and the multi-layer second material layer form a first material layer A structure in which a material layer and a second material layer alternate with each other, the first material and the second material are different, and the first material layer is in direct contact with the substrate;

Preparing a plurality of trenches on the basis of the multilayer structure, the trenches extending in a direction perpendicular to the substrate and entering the substrate;

The first material is deposited on the upper surface of the multilayer structure, the bottoms and inner side walls of the plurality of trenches to form a plurality of hollow columnar first structures made of the first material, as the formation of the The foundation of multiple supporting structures;

Preparing a plurality of trench-shaped second structures in the remaining multilayer structure, the second structures extending to the upper surface of the substrate in a direction perpendicular to the substrate;

Removing the second material layer exposed in the plurality of second structures;

The substrate is thinned to form the multi-wing structure.
The method according to claim 34 or 35, wherein part or all of the conductive layers in the multilayer conductive layer are conformal to the multi-wing structure.
The method according to claim 34 or 35, wherein a part of the conductive layer in the multi-layer conductive layer is conformal to the multi-wing structure, and the other part of the conductive layer is complementary in shape to the multi-wing structure.
The method according to any one of claims 34 to 37, wherein a single wing-like structure in the plurality of groups of wing-like structures includes a plurality of wings extending along the first direction.
The method according to any one of claims 34 to 38, wherein the supporting structure of the plurality of supporting structures is provided with at least one shaft in the hollow area thereof, and the shaft is connected to the side wall of the supporting structure. parallel.
The method according to any one of claims 34 to 39, wherein the method further comprises:

Prepare an isolation ring, the isolation ring is located above the outer side of the plurality of support structures, and the isolation ring is used to separate the laminated structure into two parts, an inner side and an outer side, the first external electrode and the The second external electrode is only electrically connected to the part of the laminated structure located on the inner side of the isolation ring, and the third external electrode and the fourth external electrode are only electrically connected to the laminated structure located on the inner side of the isolation ring. The inner part is electrically connected.
The method according to claim 40, wherein the method further comprises:

At least one first conductive via structure and at least one second conductive via structure are prepared, wherein,

The first conductive via structure is located in the isolation ring, and the second conductive via structure is located outside the isolation ring near the center of the capacitor; or, the first conductive via structure and/ Or the second conductive via structure is located outside the isolation ring near the center of the capacitor;

The first external electrode is electrically connected to some or all of the odd-numbered conductive layers in the multilayer conductive layer through the at least one first conductive via structure, and the second external electrode is electrically connected to the at least one second conductive layer through the at least one second conductive layer. Part or all of the even-numbered conductive layers in the multilayer conductive layers to which the via structure is electrically connected.
The method according to any one of claims 34 to 41, wherein the capacitor further comprises: a ring structure, the ring structure is located outside the plurality of support structures and the groups of wing-like structures .
The method according to claim 42, wherein the ring structure is formed by alternately stacking multiple layers of first material and multiple layers of second material.
The method of claim 43, wherein the plurality of sets of wing-like structures and the plurality of supporting structures are formed of the first material.
The method according to any one of claims 34 to 44, wherein the multi-wing structure is made of a conductive material, and the second external electrode is electrically connected to the multi-wing structure.
The method according to any one of claims 34 to 44, wherein the multi-wing structure comprises a main body material and a conductive layer or a conductive area on the surface of the main body material, and the second external electrode passes through the main body material and the main body material. The conductive layer or conductive area on the surface of the material is electrically connected to the electrical connection of the multi-wing structure.
The method according to any one of claims 34 to 46, wherein the method further comprises:

A filling structure is prepared, and the filling structure covers the laminated structure and fills the voids formed by the laminated structure.
The method according to any one of claims 34 to 47, wherein the wing-shaped structure in contact with the substrate in the plurality of groups of wing-shaped structures has a discontinuous area between different support structures.
The method of claim 48, wherein the substrate forms a substrate trench at the discontinuous region, and the stacked structure is further disposed in the substrate trench.
The method according to any one of claims 34 to 49, wherein the support structure penetrates the substrate, so that the lower surface of the substrate exposes the laminated structure.
The method according to claim 50, wherein the third external electrode and/or the fourth external electrode are electrically connected to a region of the multilayer conductive layer located in the support structure.
The method according to any one of claims 34 to 51, wherein the substrate is made of a conductive material, and the third external electrode is electrically connected to the multilayer conductive layer through the substrate A conductive layer in contact with the substrate.
The method according to any one of claims 33 to 52, wherein the method further comprises:

A first interconnection structure is prepared, wherein the first interconnection structure is located above the multi-wing structure, and the first external electrode and/or the second external electrode are electrically connected to the multi-wing structure through the first interconnection structure. The conductive layer in the conductive layer.
The method of claim 53, wherein the first interconnection structure comprises at least one first insulating layer, at least one first conductive via structure and at least one second conductive via structure, wherein the at least A first insulating layer is located above the multi-wing structure, the first conductive via structure and the second conductive via structure penetrate the at least one first insulating layer, and the first external electrode passes through the At least one first conductive via structure is electrically connected to part or all of the odd-numbered conductive layers in the multilayer conductive layer, and the second external electrode is electrically connected to the at least one second conductive via structure. Part or all of the even-numbered conductive layers in the multilayer conductive layer.
The method according to any one of claims 33 to 54, characterized in that, the method further comprises:

A second interconnection structure is prepared, wherein the second interconnection structure is located below the multi-wing structure, and the third external electrode and/or the fourth external electrode are electrically connected to the multi-wing structure through the second interconnection structure. The conductive layer in the conductive layer.
The method of claim 55, wherein the second interconnection structure comprises at least one second insulating layer, at least one third conductive via structure, and at least one fourth conductive via structure, wherein the at least A second insulating layer is located under the multi-wing structure, the third conductive via structure and the fourth conductive via structure penetrate the at least one second insulating layer, and the third external electrode passes through the At least one third conductive via structure is electrically connected to part or all of the odd-numbered conductive layers in the multilayer conductive layer, and the fourth external electrode is electrically connected to the at least one fourth conductive via structure through the at least one fourth conductive via structure. Part or all of the even-numbered conductive layers in the multilayer conductive layer.
The method according to any one of claims 32 to 56, wherein the preparing at least one first external electrode and at least one second external electrode comprises:

A first electrode layer is prepared above the laminated structure. The first electrode layer includes at least one first conductive region and at least one second conductive region that are separated from each other, and the first conductive region forms the first external circumstance. An electrode, and the second conductive area forms the second external electrode.
The method according to any one of claims 32 to 57, wherein the preparing at least one third external electrode and at least one fourth external electrode comprises:

A second electrode layer is prepared under the multi-wing structure. The second electrode layer includes at least one third conductive region and at least one fourth conductive region that are separated from each other, and the third conductive region forms the third external circumstance. An electrode, the fourth conductive area forms the fourth external electrode.