WO2021185025A1 - 光电探测基板及其制作方法、光电探测装置 - Google Patents

光电探测基板及其制作方法、光电探测装置 Download PDF

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WO2021185025A1
WO2021185025A1 PCT/CN2021/077213 CN2021077213W WO2021185025A1 WO 2021185025 A1 WO2021185025 A1 WO 2021185025A1 CN 2021077213 W CN2021077213 W CN 2021077213W WO 2021185025 A1 WO2021185025 A1 WO 2021185025A1
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layer
substrate
base substrate
semiconductor layer
photodetection
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PCT/CN2021/077213
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English (en)
French (fr)
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梁魁
孙拓
张宜驰
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京东方科技集团股份有限公司
北京京东方技术开发有限公司
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Priority to US17/432,422 priority Critical patent/US20230138242A1/en
Publication of WO2021185025A1 publication Critical patent/WO2021185025A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present disclosure relates to the field of photoelectric detection technology, in particular to a photodetection substrate, a manufacturing method thereof, and a photodetection device.
  • Detection technology such as X-ray detection technology, is widely used in medical, security, non-destructive testing, scientific research and other fields. X-ray detection technology has been able to convert X-ray signals to be detected into images or photos that can be directly displayed on the screen.
  • detection devices using X-ray detection technology usually use PIN diodes as photosensitive elements to achieve photoelectric conversion.
  • PIN diode needs to be doped with ion during the manufacturing process, such as p-type ion doping, which makes the manufacturing process complicated.
  • photodetectors with a metal-semiconductor-metal interdigital electrode structure do not require p-type doping, and the preparation process is relatively simple, with low cost, and is compatible with thin-film transistors and field-effect transistors. Compatibility, easy integration, fast response speed, low dark current, high filling rate and many other advantages, occupy a pivotal position in the field of medical imaging and industrial inspection.
  • the number of patterns in the production of the photodetection substrate is large, which affects the production cost and productivity of the photodetection substrate.
  • the embodiments of the present disclosure provide a photodetection substrate, a manufacturing method thereof, and a photodetection device.
  • an embodiment of the present disclosure provides a photodetection substrate, including:
  • a semiconductor layer provided on the base substrate,
  • the semiconductor layer is used to convert optical signals into electrical signals.
  • the photodetection substrate further includes:
  • An interdigital electrode located on the side of the semiconductor layer away from the base substrate;
  • a flat layer located on the side of the interdigital electrode away from the base substrate;
  • a switching transistor located on the side of the flat layer away from the base substrate, and the switching transistor is connected to the interdigital electrode through a via hole penetrating the flat layer.
  • the interdigital electrodes include comb-shaped sensing sub-electrodes and comb-shaped biasing sub-electrodes, and the sensing sub-electrodes and the biasing sub-electrodes are alternately arranged.
  • a plurality of grooves are provided on a side surface of the semiconductor layer away from the base substrate, and the sensing sub-electrodes and the biasing sub-electrodes are located in the grooves.
  • a light-shielding metal layer is provided on the surface of the semiconductor layer on one side away from the base substrate, and the orthographic projection of the light-shielding metal layer on the base substrate and the groove on the base substrate The orthographic projections on do not overlap.
  • the light-shielding metal layer is made of the same material as the interdigital electrode.
  • the photodetection substrate includes a plurality of read signal lines and strobe signal lines, and the read signal lines and the strobe signal lines cross to define a plurality of detection units;
  • Each of the detection units is provided with one interdigital electrode and one switch transistor;
  • the gate of the switch transistor is electrically connected to the gate signal line, the first electrode is electrically connected to the sensor electrode, and the second electrode is electrically connected to the read signal line.
  • the orthographic projection of the active layer of the switching transistor on the base substrate falls within the orthographic projection of the light-shielding metal layer on the base substrate.
  • the photodetection substrate further includes:
  • a first insulating layer located between the interdigital electrode and the semiconductor layer.
  • the photodetection substrate further includes:
  • a second insulating layer located between the base substrate and the semiconductor layer.
  • the interdigital electrode is in direct physical contact with the semiconductor layer.
  • the thickness of the interdigital electrode is 200-260 nm.
  • the thickness of the semiconductor layer is 250-300 nm.
  • the base substrate is an optical waveguide glass substrate or a flexible substrate.
  • the photodetection substrate further includes a wavelength conversion layer for converting invisible light into visible light;
  • the wavelength conversion layer is located on a side of the semiconductor layer away from the interdigital electrode.
  • the embodiments of the present disclosure also provide a photodetection device, including the photodetection substrate as described above.
  • embodiments of the present disclosure also provide a method for manufacturing a photodetection substrate, including:
  • a semiconductor layer is formed on the base substrate, wherein the semiconductor layer is used to convert an optical signal into an electrical signal.
  • the manufacturing method further includes:
  • a switching transistor is formed on the side of the flat layer away from the base substrate, and the switching transistor is connected to the interdigital electrode through a via hole penetrating the flat layer.
  • the interdigital electrodes include comb-shaped sensing sub-electrodes and comb-shaped biasing sub-electrodes, and the sensing sub-electrodes and the biasing sub-electrodes are alternately arranged,
  • Forming a semiconductor layer on the base substrate includes: forming a plurality of grooves on the surface of the semiconductor layer on a side away from the base substrate,
  • the forming the interdigitated electrode on the side of the semiconductor layer away from the base substrate includes: forming the sensor sub-electrode and the bias sub-electrode in the groove.
  • the manufacturing method further includes:
  • a light-shielding metal layer is formed, the light-shielding metal layer is located on the side of the active layer of the switching transistor facing the base substrate, the orthographic projection of the light-shielding metal layer on the base substrate and the groove on the liner.
  • the orthographic projections on the base substrate do not overlap, and the orthographic projection of the active layer on the base substrate falls within the orthographic projection of the light-shielding metal layer on the base substrate.
  • the light-shielding metal layer and the interdigital electrode are formed by one patterning process.
  • the manufacturing method further includes:
  • a first insulating layer is formed between the interdigital electrode and the semiconductor layer.
  • the manufacturing method further includes:
  • a third insulating layer is formed between the flat layer and the switching transistor.
  • the manufacturing method further includes: before forming the semiconductor layer,
  • a wavelength conversion layer is formed, and the wavelength conversion layer is located on the side of the semiconductor layer away from the interdigital electrode and is used to convert invisible light into visible light.
  • Fig. 1 is a schematic diagram of the structure of a related art photoelectric detection substrate
  • FIGS. 2-7 are schematic diagrams of the structure of the photodetection substrate according to the embodiments of the disclosure.
  • FIG. 8 is a schematic plan view of an interdigital electrode according to an embodiment of the disclosure.
  • FIG. 9 is a schematic diagram of a read signal line and a gate signal line included in the photodetection substrate in an embodiment of the disclosure to define a plurality of detection units intersecting.
  • the related art photodetection substrate includes a base substrate 1, a gate insulating layer located on the base substrate 1, a first passivation layer 3, a first flat layer 4, and a first buffer layer 5.
  • the layer 13, the electrode 14 of the storage capacitor, the bias sub-electrode 15 and the sensing sub-electrode 16, and the bias sub-electrode 15 and the sensing sub-electrode 16 are alternately arranged to form an interdigital electrode.
  • a polyimide (PI) insulating layer 7 between the interdigital electrode and the semiconductor layer 8 can significantly reduce the dark current and improve the detection efficiency.
  • the semiconductor layer 8 of the photodetection substrate receives light, generates charges inside, and the resistance is greatly reduced, thereby converting the light signal into an electrical signal through the photovoltaic effect.
  • most of the external bias voltage is applied to the high resistance.
  • the PI insulating layer 7 when the voltage is high enough, the PI insulating layer 7 can be turned on by the FN tunneling effect of electrons, and the electrical signal generated in the semiconductor layer 8 can be read and stored by turning on and off the thin film transistor , And then achieve the purpose of detection.
  • metals such as Mo and Al
  • PI insulating layer 7 and semiconductor layer 8 are prepared; after the interdigital electrodes are made, the surface of the interdigital electrodes is prone to oxidation.
  • the contact position between the interdigital electrode and the PI insulating layer 7 is a metal oxide film, which increases the difficulty of carrier tunneling in the PI insulating layer 7, and the resistance increases, which affects the yield of the photoelectric detection substrate; in addition, in order to ensure PI insulation For the flatness of layer 7, the thickness of the interdigital electrode should not be too large, such as generally 50-70nm. As shown in FIG.
  • the sensor electrode 16 in the interdigital electrode penetrates the first flat layer 4 and the first buffer layer 5.
  • the via holes of the second flat layer 6, the second buffer layer 17 and the source/drain metal layer 12 are overlapped to realize signal transmission, and the thickness of the interdigital electrode is small, the climbing performance is not good, the deposition coverage is poor, and the edge after etching
  • the angle is very steep, and the slope angle is large, which will affect the deposition coverage of the subsequent film layer. Poor contact is likely to occur at the corners, and breakage is likely to cause signal transmission interruption; in addition, in order to ensure the flatness of the interdigital electrode to be deposited surface , It is necessary to form the first flat layer 4 covering the thin film transistor and the second flat layer 6 covering the light-shielding metal layer 13.
  • the embodiments of the present disclosure provide a photodetection substrate, a manufacturing method thereof, and a photodetection device, which can simplify the structure of the photodetection substrate, reduce the production cost of the photodetection substrate, and improve the structural stability of the photodetection substrate.
  • the embodiment of the present disclosure provides a photoelectric detection substrate, including:
  • An interdigital electrode located on the side of the semiconductor layer away from the base substrate;
  • a flat layer located on the side of the interdigital electrode layer away from the base substrate;
  • the semiconductor layer is used to convert optical signals into electrical signals.
  • the semiconductor layer is directly fabricated on the base substrate, and the base substrate itself can provide a flat surface.
  • it needs to be cured at a high temperature. Due to the temperature difference, the phenomenon of thermal expansion and contraction will occur.
  • the stress generated inside the photoelectric detection substrate will cause the film peeling and foaming of the photodetection substrate to reduce the number of flat layers. Conducive to the stability of the photoelectric detection substrate structure.
  • the interdigital electrode is first fabricated, and then the semiconductor layer is fabricated.
  • the upper and lower surfaces of the semiconductor layer are not completely flat.
  • the semiconductor layer is directly formed on the base substrate, and the semiconductor layer is close to the side of the base substrate.
  • the surface is substantially flat, where substantially flat means that there is no patterned structure between the semiconductor layer and the base substrate, and the flatness of the surface of the semiconductor layer on the side close to the base substrate is greater than the surface of the semiconductor layer on the side away from the base substrate The flatness.
  • the base substrate may be a flexible base substrate, and the flexible base substrate may adopt PI, so that a flexible photodetection substrate can be realized.
  • the photodetection substrate includes: a flexible base substrate 21; a semiconductor layer 22 located on the flexible base substrate 21; a bias sub-electrode located on the semiconductor layer 22 28 and the sensing sub-electrode 30, the biasing sub-electrode 28 and the sensing sub-electrode 30 constitute the interdigital electrode; the flat layer 24 located on the side of the interdigital electrode away from the flexible substrate 21; the flat layer 24 is located far away from the flexible substrate 21
  • the switching transistor on the side includes a gate formed by a gate metal layer 32, an active layer 36, and a source and drain formed by a source-drain metal layer 37; a fourth insulating layer 26; and a passivation layer 27.
  • the semiconductor layer 22 may be a semiconductor amorphous silicon material, for example, amorphous silicon (a-Si).
  • the material of the fourth insulating layer 26 may include at least one of inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride.
  • the semiconductor layer 22 is directly fabricated on the flexible base substrate 21, and the flexible base substrate 21 itself can provide a flat surface, so there is no need to form a flat layer before the semiconductor layer 22 is fabricated, which can eliminate the need to fabricate the semiconductor layer.
  • the process of making the flat layer before 22 can reduce the number of flat layers in the photodetection substrate. As shown in FIG. 2, this embodiment only needs to make one flat layer 24, and this embodiment can reduce the number of flat layers. Therefore, the structure of the photoelectric detection substrate can be simplified, the production cost of the photoelectric detection substrate can be reduced, and the production capacity of the photodetection substrate can be increased. In addition, high temperature curing is required when the flat layer is made. The existence of temperature differences will cause thermal expansion and contraction. The stress generated inside the detection substrate will cause film peeling and foaming of the photodetection substrate, reducing the number of flat layers, and also conducive to the stability of the photodetection substrate structure.
  • the interdigital electrode may be made of metal, such as Mo, Al, Cu, etc.; as shown in FIG. 8, the interdigital electrode includes a comb-shaped sensor sub-electrode 30 and a comb-shaped bias sub-electrode 28.
  • the sensing sub-electrodes 30 and the biasing sub-electrodes 28 are alternately arranged and inserted into the gap between each other.
  • FIG. 2 is a schematic cross-sectional view of FIG. 8 in the AA direction.
  • the thickness of the interdigital electrode does not need to be designed too small, and the thickness of the interdigital electrode can be increased.
  • the thickness of the interdigital electrode can be 200-260nm, which can improve
  • the climbing performance of the interdigital electrode reduces the slope angle at the corners of the interdigital electrode, avoids poor contact at the corners, and ensures signal transmission; in addition, it can reduce the resistance of the interdigital electrode and reduce the thermal noise of the photoelectric detection substrate.
  • the interdigital electrode is fabricated after the semiconductor layer 22 is fabricated, and the thickness of the interdigital electrode is relatively large, and it is not easy to damage the interdigital electrode in the subsequent process. Therefore, there is no need to fabricate a conductive protection pattern on the interdigital electrode.
  • the manufacturing process and structural complexity of the photodetection substrate can be further simplified, and the production capacity of the photodetection substrate can be improved.
  • the interdigital electrode is located below the semiconductor layer 8.
  • the photocarrier density of the semiconductor layer 8 on the side away from the interdigital electrode is higher.
  • the electric field is generated by the interdigital electrodes, so the utilization of photo-generated carriers is low, resulting in a low photocurrent.
  • a plurality of grooves are provided on the surface of the semiconductor layer 22 away from the flexible base substrate 21, and the bias sub-electrodes 28 and the sensing sub-electrodes 30 are located in the grooves, so that the semiconductor layer
  • the layer 22 includes a portion between the biased sub-electrode 28 and the sensing sub-electrode 30, which can make full use of the electric field between the biased sub-electrode 28 and the sensing sub-electrode 30 to increase the utilization of photo-generated carriers and increase the photocurrent.
  • the photodetection substrate further includes a light-shielding metal layer 31, which is located on the side of the semiconductor layer 22 away from the flexible base substrate 21.
  • the orthographic projection of the light-shielding metal layer 31 on the flexible base substrate 21 It does not overlap with the orthographic projection of the groove on the flexible base substrate 21, that is, a light-shielding metal layer 31 is provided on the surface between the adjacent grooves of the semiconductor layer 22. Further, the orthographic projection of the active layer 36 of the switching transistor on the flexible substrate 21 falls within the orthographic projection of the light-shielding metal layer 31 on the flexible substrate 21, and the light-shielding metal layer 31 can avoid external light on the one hand.
  • the light-shielding metal layer 31 can reflect light incident from the outside to form a secondary optical path, so that the reflected light enters the semiconductor layer 22 again.
  • Increasing the absorption of light by the semiconductor layer 22 allows the semiconductor layer 22 to generate more photo-generated carriers, which is beneficial to improve the utilization of photo-generated carriers and increase the photocurrent, so that the thickness of the semiconductor layer 22 does not need to be set too large.
  • the thickness of the semiconductor layer 8 is 450-600 nm.
  • the thickness of the semiconductor layer 22 may be 250-300 nm.
  • the light-shielding metal layer 31 is not only located at a position corresponding to the active layer 36, but also in other areas. In order to ensure the reflection of light, the light-shielding metal layer 31 The area can be as large as possible.
  • the light-shielding metal layer 31 and the interdigital electrode can be made of the same material, so that the light-shielding metal layer 31 and the interdigital electrode can be formed at the same time through a patterning process, and there is no need to form the light-shielding metal layer 31 through a special patterning process.
  • the number of patterning processes for manufacturing the photodetection substrate can be reduced.
  • the semiconductor layer 22 may be directly formed on the flexible base substrate 21.
  • the detection substrate also includes:
  • the second insulating layer 35 is located between the flexible base substrate 21 and the semiconductor layer 22.
  • the second insulating layer 35 can be made of inorganic insulating materials such as silicon nitride, silicon oxide, silicon oxynitride, etc.
  • the thickness of the second insulating layer 35 does not need to be too large, and can be 100-200 nm.
  • the interdigital electrode can be directly formed on the semiconductor layer 22.
  • the photodetection substrate further includes: a second interdigital electrode and the semiconductor layer 22.
  • the first insulating layer 23 can be made of inorganic insulating materials such as silicon nitride, silicon oxide, silicon oxynitride, etc.; since the semiconductor layer 22 is directly formed on the flexible base substrate 21, the semiconductor layer 22 is far away from the flexible base substrate
  • the 21 side that is, the side of the semiconductor layer 22 close to the interdigital electrode, has better flatness, because there is no need to provide a thicker organic insulating layer between the interdigital electrode and the semiconductor layer 22 to ensure that the interdigital electrode is close to the side of the semiconductor layer 22
  • the first insulating layer 23 does not need to use organic insulating materials, and the thickness of the first insulating layer 23 does not need to be too large, and can be less than 1um, specifically 100-200nm, which is beneficial to reduce the thickness of the entire photodetection substrate .
  • the flat layer 24 is generally formed of organic insulating material such as resin.
  • a third layer is also provided between the flat layer 24 and the switching thin film transistor.
  • the insulating layer 25 and the third insulating layer 25 can be made of inorganic insulating materials such as silicon nitride, silicon oxide, silicon oxynitride, etc.
  • the thickness of the third insulating layer 25 does not need to be too large, and can be 100-200 nm.
  • the semiconductor layer 22 can directly convert the optical signal of the visible light into an electrical signal.
  • the photodetection substrate further includes a wavelength conversion layer 38 for converting invisible light into visible light; The wavelength conversion layer 38 is located on the side of the semiconductor layer 22 away from the interdigital electrode, as shown in FIG. 6. In this way, external light enters the wavelength conversion layer before entering the semiconductor layer.
  • the above-mentioned wavelength conversion layer 38 can convert invisible light (for example, X-ray) into visible light with a wavelength of about 550 nm.
  • the visible light that has passed through the wavelength conversion layer is incident on the semiconductor layer 22 to perform photoelectric conversion.
  • the material constituting the above-mentioned wavelength conversion layer may include phosphor, cesium iodide (CsI), gadolinium oxysulfide phosphor (Gd2O2S: Tb, GOS), tin sulfide (ZnS), cadmium tungstate At least one of (CdWO4).
  • CsI cesium iodide
  • Gd2O2S gadolinium oxysulfide phosphor
  • ZnS tin sulfide
  • CdWO4 cadmium tungstate At least one of
  • the photodetection substrate of the present embodiment includes a plurality of read signal lines 42 and a plurality of gate signal lines 41, and the read signal line 42 and the gate signal line 41 intersect to define a plurality of detection units.
  • the read signal line 42 and the strobe signal line 41 can be arranged horizontally and vertically. In this case, there are multiple read signal lines 42 and multiple strobe signal lines. The multiple detection units defined by the intersection of the line 41 are arranged in a matrix.
  • each detection unit is provided with an interdigital electrode and a switch transistor.
  • the gate of the switching transistor is electrically connected to the gate signal line, the first electrode is connected to the interdigital electrode, and the second electrode is electrically connected to the read signal line.
  • the first electrode of the switching transistor can be the source S and the second electrode D; or the first electrode has a drain D and the second electrode has a source S.
  • the gate 32 of the switching transistor is connected to the gate signal line 41, the source 36 is connected to the sensor electrode 30, and the drain 37 is connected to the read signal line 42.
  • switch transistor may be an N-type transistor or a P-type transistor, which is not limited in the present disclosure.
  • the photodetection substrate When the photodetection substrate is working, first, a positive voltage V+ with the same voltage value is provided to the bias sub-electrodes 28 in all the detection units. Then, the gate signal line 41 is scanned row by row. When the row gate signal line 41 receives the scanning signal, the switching transistor connected to the row gate signal line 41 is turned on, so that the semiconductor layer 22 transmits the electrical signal converted from the received light to the connected switch The transistor is located in the sensing sub-electrode 30 in the same detection unit. Next, the detection signal on the sensing sub-electrode 30 can be transmitted to the reading signal line 42 connected to the switching transistor through the turned-on switching transistor, thereby completing the reading of the detection signal of a row of detection units.
  • the photodetection substrate may further have a storage capacitor electrode 33.
  • the storage capacitor electrode 33 can form a storage capacitor with the second electrode, such as the drain of the switching transistor, for storing the detection signal on the sensing sub-electrode 30 and continuously and stably transmitting it to the read signal line 42 on.
  • the reading of the detection signals of the other rows of detection units is the same as that described above, and will not be repeated here.
  • the base substrate may also be a rigid base substrate 34, and the rigid base substrate 34 may be a quartz substrate, a glass substrate, or the like.
  • the photodetection substrate when the base substrate adopts a hard base substrate, includes: a hard base substrate 34; a semiconductor layer 22 on the hard base substrate 34; a bias on the semiconductor layer 22
  • the pressure sub-electrode 28 and the sensing sub-electrode 30, the bias sub-electrode 28 and the sensing sub-electrode 30 constitute the interdigital electrode; the flat layer 24 located on the side of the interdigital electrode away from the hard substrate 34; the flat layer 24 is located far away from the hard substrate 34
  • the switching transistor on the side of the base substrate 34, the switching transistor includes a gate formed by a gate metal layer 32, an active layer 36, and a source and drain formed by a source-drain metal layer 37; a fourth insulating layer 26; a passivation layer 27 .
  • the hard base substrate 34 may be an optical waveguide glass substrate, which can reduce the scattering of incident light, increase the utilization rate of incident light, and thereby improve the accuracy of light detection.
  • the semiconductor layer 22 may be a semiconductor amorphous silicon material, for example, amorphous silicon (a-Si).
  • the material of the fourth insulating layer 26 may include at least one of inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride.
  • the interdigital electrodes include comb-shaped sensing sub-electrodes 30 and comb-shaped bias sub-electrodes 28.
  • the sensing sub-electrodes 30 and the biasing sub-electrodes 28 are alternately arranged and inserted into the gap between each other.
  • FIG. 4 is a schematic cross-sectional view of FIG. 8 in the AA direction.
  • the semiconductor layer 22 is directly fabricated on the hard base substrate 34.
  • the hard base substrate 34 itself can provide a flat surface, so there is no need to form a flat layer before the semiconductor layer 22 is fabricated, which can eliminate the need for manufacturing
  • the process of making a flat layer before the semiconductor layer 22 can reduce the number of flat layers in the photodetection substrate. As shown in FIG. 4, this embodiment only needs to make one flat layer 24, and this embodiment can reduce the number of flat layers.
  • the process can simplify the structure of the photodetection substrate, reduce the production cost of the photodetection substrate, and increase the production capacity of the photodetection substrate.
  • high temperature curing is required, which will cause thermal expansion and contraction due to temperature differences.
  • the stress generated inside the photodetection substrate will cause the film peeling and foaming of the photodetection substrate, reducing the number of flat layers, and also conducive to the stability of the photodetection substrate structure.
  • the thickness of the interdigital electrode does not need to be designed too small, and the thickness of the interdigital electrode can be increased.
  • the thickness of the interdigital electrode can be 200-260nm, which can improve
  • the climbing performance of the interdigital electrode reduces the slope angle at the corners of the interdigital electrode, avoids poor contact at the corners, and ensures signal transmission; in addition, it can reduce the resistance of the interdigital electrode and reduce the thermal noise of the photoelectric detection substrate.
  • the interdigital electrode is fabricated after the semiconductor layer 22 is fabricated, and the thickness of the interdigital electrode is relatively large, and it is not easy to damage the interdigital electrode in the subsequent process. Therefore, there is no need to fabricate a conductive protection pattern on the interdigital electrode.
  • the manufacturing process and structural complexity of the photodetection substrate can be further simplified, and the production capacity of the photodetection substrate can be improved.
  • the interdigital electrode is located below the semiconductor layer 8.
  • the photocarrier density of the semiconductor layer 8 on the side away from the interdigital electrode is higher.
  • the electric field is generated by the interdigital electrode, and the utilization rate of photo-generated carriers is low, resulting in a low photocurrent.
  • the surface of the semiconductor layer 22 away from the hard base substrate 34 is provided with a plurality of grooves, and the bias sub-electrodes 28 and the sensing sub-electrodes 30 are located in the grooves.
  • the semiconductor layer 22 is located between the biasing sub-electrode 28 and the sensing sub-electrode 30, and can make full use of the electric field between the biasing sub-electrode 28 and the sensing sub-electrode 30 to increase the utilization of photo-generated carriers and increase the photocurrent.
  • the photodetection substrate further includes a light-shielding metal layer 31, which is located on the side of the semiconductor layer 22 away from the hard base substrate 34.
  • the light-shielding metal layer 31 is on the hard base substrate 34.
  • the orthographic projection and the orthographic projection of the groove on the hard base substrate 34 do not overlap, that is, a light-shielding metal layer 31 is provided on the surface between adjacent grooves of the semiconductor layer 22.
  • the orthographic projection of the active layer 36 of the switching transistor on the hard base substrate 34 falls within the orthographic projection of the light-shielding metal layer 31 on the hard base substrate 34, and the light-shielding metal layer 31 can avoid External light irradiates the active layer 36 of the switching transistor, which affects the performance of the switching transistor; on the other hand, the light-shielding metal layer 31 can reflect the light incident from the outside to form a secondary optical path, so that the reflected light enters the semiconductor layer again 22. Increase the absorption of light by the semiconductor layer 22, so that the semiconductor layer 22 generates more photo-generated carriers, which is beneficial to increase the photocurrent, so that the thickness of the semiconductor layer 22 does not need to be set too large.
  • the thickness of the semiconductor layer 8 is 450-600 nm. In this embodiment, the thickness of the semiconductor layer 22 may be 250-300 nm.
  • the light-shielding metal layer 31 is not only located at a position corresponding to the active layer 36, but also in other areas. In order to ensure the reflection of light, the light-shielding metal layer 31 The area can be as large as possible.
  • the light-shielding metal layer 31 and the interdigital electrode can be made of the same material, so that the light-shielding metal layer 31 and the interdigital electrode can be formed at the same time through a patterning process, and there is no need to form the light-shielding metal layer 31 through a special patterning process.
  • the number of patterning processes for manufacturing the photodetection substrate can be reduced.
  • the semiconductor layer 22 may be directly formed on the hard base substrate 34.
  • the photodetection substrate also includes:
  • the second insulating layer 35 is located between the hard base substrate 34 and the semiconductor layer 22.
  • the second insulating layer 35 can be made of inorganic insulating materials such as silicon nitride, silicon oxide, silicon oxynitride, etc.
  • the thickness of the second insulating layer 35 does not need to be too large, and can be 100-200 nm.
  • the interdigital electrode may be directly formed on the semiconductor layer 22.
  • the photodetection substrate further includes: a second interdigital electrode and the semiconductor layer 22 An insulating layer 23.
  • the first insulating layer 23 can be made of inorganic insulating materials such as silicon nitride, silicon oxide, silicon oxynitride, etc.; since the semiconductor layer 22 is directly formed on the hard base substrate 34, the semiconductor layer 22 is far away from the hard liner.
  • the side of the base substrate 34 that is, the side of the semiconductor layer 22 close to the interdigital electrode, has better flatness, because there is no need to provide a thicker organic insulating layer between the interdigital electrode and the semiconductor layer 22 to ensure that the interdigital electrode is close to the semiconductor layer 22
  • the first insulating layer 23 does not need to use organic insulating materials, and the thickness of the first insulating layer 23 does not need to be too large, and can be less than 1um, specifically 100-200nm, which is beneficial to reduce the entire photodetection substrate thickness of.
  • the flat layer 24 is generally formed of organic insulating material such as resin.
  • a third layer is also provided between the flat layer 24 and the switching thin film transistor.
  • the insulating layer 25 and the third insulating layer 25 can be made of inorganic insulating materials such as silicon nitride, silicon oxide, silicon oxynitride, etc.
  • the thickness of the third insulating layer 25 does not need to be too large, and can be 100-200 nm.
  • the embodiment of the present disclosure also provides a photodetection device, which includes the photodetection substrate as described above.
  • the above-mentioned photodetection substrate is in the shape of a flat panel, and therefore, the photodetection device can become a flat panel detector.
  • the above-mentioned photodetection device has the same technical effect as the photodetection substrate provided by the foregoing embodiment, and will not be repeated here.
  • the embodiment of the present disclosure also provides a method for manufacturing a photodetection substrate, including:
  • a switching transistor is formed on the side of the flat layer away from the base substrate, and the switching transistor is connected to the interdigital electrode through a via hole penetrating the flat layer.
  • the semiconductor layer is directly fabricated on the base substrate, and the base substrate itself can provide a flat surface.
  • it needs to be cured at a high temperature. Due to the temperature difference, the phenomenon of thermal expansion and contraction will occur.
  • the stress generated inside the photoelectric detection substrate will cause the film peeling and foaming of the photodetection substrate to reduce the number of flat layers. Conducive to the stability of the photoelectric detection substrate structure.
  • the base substrate may be a flexible base substrate or a rigid base substrate.
  • the semiconductor layer can be directly fabricated on the base substrate.
  • forming a semiconductor layer on the base substrate includes:
  • a plurality of grooves are formed on the surface of the semiconductor layer on one side away from the base substrate.
  • the interdigital electrodes include comb-shaped sensing sub-electrodes and comb-shaped biasing sub-electrodes, the sensing sub-electrodes and the biasing sub-electrodes are alternately arranged, and forming the interdigital electrodes includes:
  • the sensing sub-electrode and the biasing sub-electrode are formed in the groove.
  • the semiconductor layer includes a portion between the biased sub-electrode and the sensing sub-electrode, and the electric field between the biased sub-electrode and the sensing sub-electrode can be fully utilized to improve the utilization of photo-generated carriers and increase the photocurrent.
  • the manufacturing method of the photodetection substrate further includes:
  • a light-shielding metal layer is formed, the light-shielding metal layer is located on the side of the active layer of the switching transistor facing the flexible base substrate, and the orthographic projection of the light-shielding metal layer on the base substrate and the groove are in the The orthographic projections on the base substrate do not overlap, and the orthographic projection of the active layer on the base substrate falls within the orthographic projection of the light-shielding metal layer on the base substrate.
  • the light-shielding metal layer can avoid external light.
  • the light-shielding metal layer can reflect light incident from the outside to form a secondary optical path, so that the reflected light enters the semiconductor layer again, increasing the semiconductor layer
  • the absorption of light causes the semiconductor layer to generate more photogenerated carriers, which is beneficial to increase the photocurrent. In this way, the thickness of the semiconductor layer does not need to be set too large, and the thickness of the semiconductor layer can be reduced.
  • the light-shielding metal layer and the interdigital electrode can be formed at the same time through one patterning process, and there is no need to form the light-shielding metal layer through a special patterning process, which can reduce the number of patterning processes for manufacturing the photodetection substrate.
  • the manufacturing method of the photodetection substrate further includes:
  • a first insulating layer is formed between the interdigital electrode and the semiconductor layer.
  • the first insulating layer can be made of inorganic insulating materials such as silicon nitride, silicon oxide, and silicon oxynitride.
  • the manufacturing method of the photodetection substrate further includes:
  • a third insulating layer is formed between the flat layer and the switching thin film transistor.
  • the third insulating layer can be made of inorganic insulating materials such as silicon nitride, silicon oxide, and silicon oxynitride.
  • the manufacturing method of the photodetection substrate before forming the semiconductor layer, the manufacturing method of the photodetection substrate further includes:
  • a wavelength conversion layer is formed, and the wavelength conversion layer is located on the side of the semiconductor layer away from the interdigital electrode, so that external light enters the wavelength conversion layer before entering the semiconductor layer.
  • the above-mentioned wavelength conversion layer can convert invisible light (for example, X-ray) into visible light with a wavelength of about 550 nm.
  • the visible light that has passed through the wavelength conversion layer is incident on the semiconductor layer for photoelectric conversion.

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Abstract

本公开提供了一种光电探测基板及其制作方法、光电探测装置。所述光电探测基板包括：衬底基板以及设置在所述衬底基板上的半导体层，其中，所述半导体层用于将光信号转换为电信号。

Description

光电探测基板及其制作方法、光电探测装置
相关申请的交叉引用
本公开主张在2020年3月20日在中国提交的中国专利申请No.202010199954.5的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及光电探测技术领域，特别是指一种光电探测基板及其制作方法、光电探测装置。
背景技术
探测技术，例如X射线探测技术广泛应用于医疗、安全、无损检测、科研等领域。X射线探测技术已经能够将待探测的X射线信号转换为能够直接显示在屏幕上的图像或照片。
目前，采用X射线探测技术的探测装置通常采用PIN二极管作为感光元件，以实现光电转换。然而，上述PIN二极管在制作过程中需要进行离子掺杂，例如p型离子掺杂，使得制作工艺复杂。
不同于传统的PIN二极管类探测器，金属-半导体-金属叉指电极结构的光电探测器不需要进行p型掺杂，制备工艺相对简单，具有成本低，与薄膜晶体管及场效应晶体管等制作工艺兼容，易集成，响应速度快，暗电流小，填充率高等诸多优势，在医疗成像及工业检测领域占据举足轻重的地位。
相关技术中，制作光电探测基板的构图次数较多，影响了光电探测基板的生产成本和产能。
发明内容
本公开的实施例提供一种光电探测基板及其制作方法、光电探测装置。
一方面，本公开的实施例提供一种光电探测基板，包括：
衬底基板；
设置在所述衬底基板上的半导体层，
其中，所述半导体层用于将光信号转换为电信号。
可选地，所述光电探测基板还包括：
位于所述半导体层远离所述衬底基板一侧的叉指电极；
位于所述叉指电极远离所述衬底基板一侧的平坦层；
位于所述平坦层远离所述衬底基板一侧的开关晶体管，所述开关晶体管通过贯穿所述平坦层的过孔与所述叉指电极连接。
可选地，所述叉指电极包括梳状的感应子电极和梳状的偏压子电极，所述感应子电极与所述偏压子电极交替设置。
可选地，所述半导体层远离所述衬底基板的一侧表面设置有多个凹槽，所述感应子电极和所述偏压子电极位于所述凹槽内。
可选地，所述半导体层远离所述衬底基板的一侧表面设置有遮光金属层，所述遮光金属层在所述衬底基板上的正投影与所述凹槽在所述衬底基板上的正投影不重叠。
可选地，所述遮光金属层与所述叉指电极的材料相同。
可选地，所述光电探测基板包括多条读取信号线和选通信号线，所述读取信号线与所述选通信号线交叉界定多个检测单元；
每个所述检测单元内设置有一个所述叉指电极和一个所述开关晶体管；
所述开关晶体管的栅极与所述选通信号线电连接，第一极与所述感应子电极电连接，第二极与所述读取信号线电连接。
可选地，所述开关晶体管的有源层在所述衬底基板上的正投影落入所述遮光金属层在所述衬底基板上的正投影内。
可选地，所述光电探测基板还包括：
位于所述叉指电极和所述半导体层之间的第一绝缘层。
可选地，所述光电探测基板还包括：
位于所述衬底基板和所述半导体层之间的第二绝缘层。
可选地，所述叉指电极与所述半导体层直接物理接触。
可选地，所述叉指电极的厚度为200-260nm。
可选地，所述半导体层的厚度为250-300nm。
可选地，所述衬底基板为光波导玻璃基板或柔性基板。
可选地，所述光电探测基板还包括用于将非可见光转换为可见光的波长转换层；
所述波长转换层位于所述半导体层远离所述叉指电极的一侧。
另一方面，本公开的实施例还提供了一种光电探测装置，包括如上所述的光电探测基板。
又一方面，本公开的实施例还提供了一种光电探测基板的制作方法，包括：
提供一衬底基板；
在所述衬底基板上形成半导体层，其中，所述半导体层用于将光信号转换为电信号。
可选地，所述制作方法还包括：
在所述半导体层远离所述衬底基板的一侧形成叉指电极；
形成覆盖所述叉指电极的平坦层；
在所述平坦层远离所述衬底基板的一侧形成开关晶体管，所述开关晶体管通过贯穿所述平坦层的过孔与所述叉指电极连接。
可选地，所述叉指电极包括梳状的感应子电极和梳状的偏压子电极，所述感应子电极与偏压子电极交替设置，
在所述衬底基板上形成半导体层包括：在所述半导体层远离所述衬底基板的一侧表面形成多个凹槽，
所述在所述半导体层远离所述衬底基板的一侧形成叉指电极包括：在所述凹槽内形成所述感应子电极与偏压子电极。
可选地，所述制作方法还包括：
形成遮光金属层，所述遮光金属层位于所述开关晶体管的有源层朝向衬底基板一侧，所述遮光金属层在所述衬底基板上的正投影与所述凹槽在所述衬底基板上的正投影不重叠，且所述有源层在衬底基板上的正投影落入所述遮光金属层在衬底基板上的正投影内。
可选地，通过一次构图工艺形成所述遮光金属层和叉指电极。
可选地，所述制作方法还包括：
形成位于所述叉指电极和半导体层之间的第一绝缘层。
可选地，所述制作方法还包括：
形成位于所述平坦层和开关晶体管之间的第三绝缘层。
可选地，所述制作方法还包括：在形成半导体层之前，
形成波长转换层，所述波长转换层位于所述半导体层远离叉指电极的一侧，并且用于将非可见光转换为可见光。
附图说明
图1为相关技术光电探测基板的结构示意图；
图2-图7为本公开实施例光电探测基板的结构示意图；
图8为本公开实施例叉指电极的平面示意图；
图9为本公开实施例中的光电探测基板包括的读取信号线与选通信号线交叉界定多个检测单元的示意图。
具体实施方式
为使本公开的实施例要解决的技术问题、技术方案和优点更加清楚，下面将结合附图及具体实施例进行详细描述。
相关技术的光电探测基板中，如图1所示，包括衬底基板1、位于衬底基板1上的栅绝缘层2、第一钝化层3、第一平坦层4、第一缓冲层5、第二平坦层6、第二缓冲层17、聚酰亚胺绝缘层7、半导体层8、第二钝化层9、栅金属层10、有源层11、源漏金属层12、遮光金属层13、存储电容的电极14、偏压子电极15和感应子电极16，偏压子电极15和感应子电极16交替排布，组成叉指电极。
如图1所示，在叉指电极和半导体层8之间填充聚酰亚胺(Polyimide，PI)绝缘层7，可显著减小暗电流，提高探测效率。光照条件下，光电探测基板的半导体层8接收光，内部产生电荷，电阻大幅度下降，从而通过光伏效应将光信号转换为电信号，而此时的外置偏压大部分施加在电阻很高的PI绝缘层7上，当电压足够高时，PI绝缘层7可以通过电子的F-N隧穿效应导通， 半导体层8中产生的电信号可以通过薄膜晶体管的导通和关闭实现读取和存储，进而达到检测的目的。
图1所示的光电探测基板中，先沉积金属(比如Mo和Al)制作叉指电极，再制备PI绝缘层7和半导体层8；在制作叉指电极后，叉指电极表面容易发生氧化，叉指电极与PI绝缘层7接触位置处为金属氧化膜，增加了载流子在PI绝缘层7中的隧穿难度，电阻增大，影响光电探测基板的良率；另外，为了保证PI绝缘层7的平坦度，叉指电极的厚度不能太大，比如一般为50-70nm，如图1所示，叉指电极中的感应子电极16通过贯穿第一平坦层4、第一缓冲层5、第二平坦层6、第二缓冲层17的过孔与源漏金属层12搭接实现信号传输，而叉指电极的厚度较小，爬坡性能不好，沉积覆盖性差，刻蚀之后边角十分陡直，坡度角很大，会影响后续膜层的沉积覆盖性，边角处易出现接触不良，容易出现断裂现象造成信号传输中断；另外，为了保证叉指电极待沉积表面的平坦度，需要形成覆盖薄膜晶体管的第一平坦层4和覆盖遮光金属层13的第二平坦层6，工艺步骤繁琐，在制作平坦层时，需要涂布有机绝缘材料比如树脂进行填平，然后进行高温固化，在进行高温固化时，由于温差的存在会有热胀冷缩现象，光电探测基板内部产生的应力会导致出现膜层剥离、发泡现象，影响光电探测基板结构的稳定性；由于叉指电极表面覆盖有PI绝缘膜7、半导体层8和钝化层9，在绑定区域还需要对PI绝缘膜7、半导体层8和钝化层9进行刻蚀暴露出叉指电极，在刻蚀的过程中很容易对叉指电极造成损伤，为了避免叉指电极损伤，还需要沉积一层氧化铟锡(Indium Tin Oxide，ITO)并对该ITO层进行构图形成保护叉指电极的导电保护图形，又增加了制作光电探测基板的构图工艺的次数，以及光电检测基板的结构复杂度，降低了光电探测基板的产能。
本公开实施例提供一种光电探测基板及其制作方法、光电探测装置，能够简化光电探测基板的结构，降低光电检测基板的生产成本，提高光电探测基板的结构稳定性。
本公开实施例提供一种光电探测基板，包括：
衬底基板；
设置在所述衬底基板上的半导体层；
位于所述半导体层远离所述衬底基板一侧的叉指电极；
位于所述叉指电极层远离所述衬底基板一侧的平坦层；
位于所述平坦层远离所述衬底基板一侧的开关晶体管，所述开关晶体管通过贯穿所述平坦层的过孔与所述叉指电极连接。可选地，所述半导体层用于将光信号转换为电信号。
本实施例中，将半导体层直接制作在衬底基板上，衬底基板本身能够提供平坦的表面，这样无需在制作半导体层之前形成平坦层，能够省去在制作半导体层之前制作平坦层的工艺，能够减少光电探测基板中的平坦层的层数，减少平坦层的制作工序，从而能够简化光电探测基板的结构，降低光电检测基板的生产成本，提高光电探测基板的产能；另外，在制作平坦层时，需要进行高温固化，由于温差的存在会导致热胀冷缩现象，光电探测基板内部产生的应力会导致光电探测基板出现膜层剥离、发泡等现象，减少平坦层的层数，还有利于光电探测基板结构的稳定性。
相关技术中先制作叉指电极，再制作半导体层，半导体层的上下表面都不是完全平坦的，而本公开实施例将半导体层直接形成在衬底基板上，半导体层靠近衬底基板一侧的表面是基本平坦的，其中，基本平坦指半导体层和衬底基板之间不存在图案化的结构，半导体层靠近衬底基板一侧的表面的平坦度大于半导体层远离衬底基板一侧的表面的平坦度。
其中，衬底基板可以为柔性衬底基板，柔性衬底基板可以采用PI，这样可以实现柔性光电探测基板。如图2所示，在衬底基板采用柔性衬底基板时，光电探测基板包括：柔性衬底基板21；位于柔性衬底基板21上的半导体层22；位于半导体层22上的偏压子电极28和感应子电极30，偏压子电极28和感应子电极30组成叉指电极；位于叉指电极远离柔性衬底基板21一侧的平坦层24；位于平坦层24远离柔性衬底基板21一侧的开关晶体管，开关晶体管包括栅金属层32形成的栅极、有源层36以及源漏金属层37形成的源极、漏极；第四绝缘层26；钝化层27。
其中，半导体层22可以采用半导体非晶硅材料，例如，无定形硅(amorphous Silicon，a-Si)。第四绝缘层26的材料可以包括氧化硅、氮化硅、 氮氧化硅等无机材料中的至少一种。
本实施例中，将半导体层22直接制作在柔性衬底基板21上，柔性衬底基板21本身能够提供平坦的表面，这样无需在制作半导体层22之前形成平坦层，能够省去在制作半导体层22之前制作平坦层的工艺，能够减少光电探测基板中的平坦层的层数，如图2所示，本实施例仅需要制作一层平坦层24，本实施例能够减少平坦层的制作工序，从而能够简化光电探测基板的结构，降低光电检测基板的生产成本，提高光电探测基板的产能；另外，在制作平坦层时，需要进行高温固化，由于温差的存在会导致热胀冷缩现象，光电探测基板内部产生的应力会导致光电探测基板出现膜层剥离、发泡等现象，减少平坦层的层数，还有利于光电探测基板结构的稳定性。
一些实施例中，叉指电极可以采用金属制作，比如Mo、Al、Cu等；如图8所示，叉指电极包括梳状的感应子电极30和梳状的偏压子电极28。感应子电极30与偏压子电极28交替设置并插入彼此的空隙中，其中，图2为图8在AA方向上的截面示意图。
本实施例中，由于无需在叉指电极上制作PI绝缘层，叉指电极的厚度无需设计的太小，可以提高叉指电极的厚度，叉指电极的厚度可以为200-260nm，这样可以改善叉指电极的爬坡性能，降低叉指电极边角处的坡度角，避免边角处出现接触不良，保证信号的传输；另外还可以减少叉指电极的电阻，降低光电探测基板的热噪声。
另外，本实施例在制作半导体层22后制作叉指电极，且叉指电极的厚度较大，在后续工艺中不易对叉指电极造成损伤，因此，无需在叉指电极上制作导电保护图形，能够进一步简化光电探测基板的制作工艺和结构复杂度，提高光电探测基板的产能。
如图1所示，相关技术的光电探测基板中，叉指电极位于半导体层8的下方，当光照射在半导体层8上时，半导体层8远离叉指电极一侧的光载流子密度较大，而电场是由叉指电极产生的，这样光生载流子利用率较低，导致光电流较低。
本实施例中，如图2所示，半导体层22远离柔性衬底基板21的一侧表 面设置有多个凹槽，偏压子电极28和感应子电极30位于所述凹槽内，这样半导体层22包括位于偏压子电极28和感应子电极30之间的部分，可以充分利用偏压子电极28和感应子电极30之间的电场，提高光生载流子的利用率，提升光电流。
如图2所示，光电探测基板还包括遮光金属层31，遮光金属层31位于半导体层22远离柔性衬底基板21的一侧，所述遮光金属层31在柔性衬底基板21上的正投影与所述凹槽在柔性衬底基板21上的正投影不重叠，即半导体层22相邻凹槽之间的表面上设置有遮光金属层31。进一步地，开关晶体管的有源层36在柔性衬底基板21上的正投影落入所述遮光金属层31在柔性衬底基板21上的正投影内，遮光金属层31一方面可以避免外界光照射到开关晶体管的有源层36上，影响开关晶体管的性能；另一方面，遮光金属层31可以对外界入射的光线进行反射，形成二次光路，使得反射后的光线再次进入半导体层22，增加半导体层22对光的吸收，使得半导体层22产生更多的光生载流子，有利于提高光生载流子的利用率，增加光电流，这样半导体层22的厚度无需设置的过大。相关技术中，半导体层8的厚度为450-600nm，本实施例中，半导体层22的厚度可以为250-300nm。为了提高光生载流子的利用率，如图2所示，遮光金属层31并不仅仅位于与有源层36对应的位置，还设置在其他区域，为了保证对光线的反射，遮光金属层31的面积可以尽可能大。
其中，遮光金属层31与所述叉指电极可以采用相同的材料制成，这样可以通过一次构图工艺同时形成遮光金属层31和叉指电极，无需通过专门的构图工艺来形成遮光金属层31，能够减少制作光电探测基板的构图工艺的次数。
本实施例中，半导体层22可以直接形成在柔性衬底基板21上，为了避免柔性衬底基板21中的杂质离子进入半导体层22中，影响光电探测基板的性能，如图3所示，光电探测基板还包括：
位于所述柔性衬底基板21和所述半导体层22之间的第二绝缘层35。第二绝缘层35可以采用氮化硅、氧化硅、氮氧化硅等无机绝缘材料，第二绝缘层35的厚度无需设置的太大，可以为100-200nm。
本实施例中，叉指电极可以直接形成在半导体层22上，为了降低光电探测基板的暗电流，如图2所示，光电探测基板还包括：位于叉指电极和半导体层22之间的第一绝缘层23，第一绝缘层23可以采用氮化硅、氧化硅、氮氧化硅等无机绝缘材料；由于半导体层22是直接形成在柔性衬底基板21上，半导体层22远离柔性衬底基板21一侧也就是半导体层22靠近叉指电极一侧的平坦度较好，因为在叉指电极和半导体层22之间无需设置较厚的有机绝缘层来保证叉指电极靠近半导体层22一侧的平坦度，第一绝缘层23无需采用有机绝缘材料，第一绝缘层23的厚度无需设置的太大，可以小于1um，具体可以为100-200nm，这样有利于减小整个光电探测基板的厚度。
平坦层24一般采用有机绝缘材质比如树脂形成，为了避免平坦层24中的杂质进入开关晶体管的有源层36，影响开关晶体管的性能，在平坦层24和开关薄膜晶体管之间还设置有第三绝缘层25，第三绝缘层25可以采用氮化硅、氧化硅、氮氧化硅等无机绝缘材料，第三绝缘层25的厚度无需设置的太大，可以为100-200nm。
当光源发出的探测光线为可见光时，半导体层22可以直接将可见光的光信号转换为电信号。当光源发出的探测光线为X射线(X-ray)等不可见光时，为了使得半导体层22仍然能够实现光电转换，光电探测基板还包括用于将非可见光转换为可见光的波长转换层38；所述波长转换层38位于所述半导体层22远离叉指电极的一侧，如图6所示。这样，外界光线在进入半导体层之前先进入波长转换层。
本公开的一些实施例中，上述波长转换层38能够将非可见光(例如X射线)转换成波长为550nm左右的可见光。在此情况下，经过波长转换层的可见光再入射至半导体层22进行光电转换。
在本公开的一些实施例中，构成上述波长转换层的材料可以包括磷光体、碘化铯(CsI)、硫氧化钆荧光粉(Gd2O2S:Tb，GOS)、硫化锡(ZnS)、钨酸镉(CdWO4)中的至少一种构成。需要说明的是，上述是以光源发出的非可见光为X-ray为例进行的说明。上述光源还可以发出其他非可见光，例如，γ-ray时，只需要对构成波长转换层的材料进行调整，使其能够将入射至波 长转换层的γ-ray转换为可见光即可。
如图9所示，本实施例的光电探测基板包括多条读取信号线42和多条选通信号线41，读取信号线42与选通信号线41交叉界定多个检测单元。
需要说明的是，在本公开的一些实施例中，读取信号线42和选通信号线41可以横纵交叉设置，在此情况下，由多条读取信号线42与多条选通信号线41交叉界定的多个检测单元呈矩阵形式排列。
为了对每个检测单元采集到的检测信号进行选择性输出，每个检测单元内设置有一个上述叉指电极和一个开关晶体管。该开关晶体管的栅极与上述选通信号线电连接，第一极与所述叉指电极连接，第二极与所述读取信号线电连接。开关晶体管的第一极可以为源极S，第二极为漏极D；或者第一极为漏极D，第二极为源极S。例如，如图7所示，该开关晶体管的栅极32与选通信号线41连接，源极36与感应子电极30连接，漏极37与读取信号线42连接。
需要说明的是，上述开关晶体管可以为N型晶体管，或者P型晶体管，本公开对此不做限定。
在光电探测基板工作时，首先，向所有检测单元中的偏压子电极28提供一电压值相同的正电压V+。然后，逐行对选通信号线41进行扫描。当一行选通信号线41接收到扫描信号时，与该行选通信号线41相连接的开关晶体管导通，从而使得半导体层22将接收的光线转换后的电信号传输至与导通的开关晶体管位于同一检测单元中的感应子电极30。接下来，感应子电极30上的检测信号可以通过导通的开关晶体管传输至与该开关晶体管相连接的读取信号线42上，从而完成一行检测单元检测信号的读取。
基于此，为了使得感应子电极30上的检测信号可以持续稳定的传输至读取信号线42上，光电探测基板还可以具有存储电容电极33。在此情况下，上述存储电容电极33能够与开关晶体管的第二极比如漏极构成一存储电容，用于对感应子电极30上的检测信号进行存储，并持续稳定的传输至读取信号线42上。其他各行检测单元检测信号的读取同上所述，此处不再赘述。
进一步地，如图4和图5所示，衬底基板还可以采用硬质衬底基板34， 硬质衬底基板34可以采用石英基板、玻璃基板等。
如图4所示，在衬底基板采用硬质衬底基板时，光电探测基板包括：硬质衬底基板34；位于硬质衬底基板34上的半导体层22；位于半导体层22上的偏压子电极28和感应子电极30，偏压子电极28和感应子电极30组成叉指电极；位于叉指电极远离硬质衬底基板34一侧的平坦层24；位于平坦层24远离硬质衬底基板34一侧的开关晶体管，开关晶体管包括栅金属层32形成的栅极、有源层36以及源漏金属层37形成的源极、漏极；第四绝缘层26；钝化层27。
一些实施例中，硬质衬底基板34可以采用光波导玻璃基板，这样能够减少入射光的散射，提高对入射光线的利用率，进而提高光线检测精度。
其中，半导体层22可以采用半导体非晶硅材料，例如，无定形硅(a-Si)。第四绝缘层26的材料可以包括氧化硅、氮化硅、氮氧化硅等无机材料中的至少一种。
一些实施例中，如图8所示，叉指电极包括梳状的感应子电极30和梳状的偏压子电极28。感应子电极30与偏压子电极28交替设置并插入彼此的空隙中，其中，图4为图8在AA方向上的截面示意图。
本实施例中，将半导体层22直接制作在硬质衬底基板34上，硬质衬底基板34本身能够提供平坦的表面，这样无需在制作半导体层22之前形成平坦层，能够省去在制作半导体层22之前制作平坦层的工艺，能够减少光电探测基板中的平坦层的层数，如图4所示，本实施例仅需要制作一层平坦层24，本实施例能够减少平坦层的制作工序，从而能够简化光电探测基板的结构，降低光电检测基板的生产成本，提高光电探测基板的产能；另外，在制作平坦层时，需要进行高温固化，由于温差的存在会导致热胀冷缩现象，光电探测基板内部产生的应力会导致光电探测基板出现膜层剥离、发泡等现象，减少平坦层的层数，还有利于光电探测基板结构的稳定性。
本实施例中，由于无需在叉指电极上制作PI绝缘层，叉指电极的厚度无需设计的太小，可以提高叉指电极的厚度，叉指电极的厚度可以为200-260nm，这样可以改善叉指电极的爬坡性能，降低叉指电极边角处的坡度 角，避免边角处出现接触不良，保证信号的传输；另外还可以减少叉指电极的电阻，降低光电探测基板的热噪声。
另外，本实施例在制作半导体层22后制作叉指电极，且叉指电极的厚度较大，在后续工艺中不易对叉指电极造成损伤，因此，无需在叉指电极上制作导电保护图形，能够进一步简化光电探测基板的制作工艺和结构复杂度，提高光电探测基板的产能。
如图1所示，相关技术的光电探测基板中，叉指电极位于半导体层8的下方，当光照射在半导体层8上时，半导体层8远离叉指电极一侧的光载流子密度较大，而电场是由叉指电极产生的，光生载流子利用率较低，导致光电流较低。
本实施例中，如图4所示，半导体层22远离硬质衬底基板34的一侧表面设置有多个凹槽，偏压子电极28和感应子电极30位于所述凹槽内，这样半导体层22位于偏压子电极28和感应子电极30之间，可以充分利用偏压子电极28和感应子电极30之间的电场，提高光生载流子的利用率，提升光电流。
如图4所示，光电探测基板还包括遮光金属层31，遮光金属层31位于半导体层22远离硬质衬底基板34的一侧，所述遮光金属层31在硬质衬底基板34上的正投影与所述凹槽在硬质衬底基板34上的正投影不重叠，即半导体层22相邻凹槽之间的表面上设置有遮光金属层31。进一步地，开关晶体管的有源层36在硬质衬底基板34上的正投影落入所述遮光金属层31在硬质衬底基板34上的正投影内，遮光金属层31一方面可以避免外界光照射到开关晶体管的有源层36上，影响开关晶体管的性能；另一方面，遮光金属层31可以对外界入射的光线进行反射，形成二次光路，使得反射后的光线再次进入半导体层22，增加半导体层22对光的吸收，使得半导体层22产生更多的光生载流子，有利于增加光电流，这样半导体层22的厚度无需设置的过大。相关技术中，半导体层8的厚度为450-600nm，本实施例中，半导体层22的厚度可以为250-300nm。为了提高光生载流子的利用率，如图4所示，遮光金属层31并不仅仅位于与有源层36对应的位置，还设置在其他区域，为了 保证对光线的反射，遮光金属层31的面积可以尽可能大。
其中，遮光金属层31与所述叉指电极可以采用相同的材料制成，这样可以通过一次构图工艺同时形成遮光金属层31和叉指电极，无需通过专门的构图工艺来形成遮光金属层31，能够减少制作光电探测基板的构图工艺的次数。
本实施例中，半导体层22可以直接形成在硬质衬底基板34上，为了避免硬质衬底基板34中的杂质离子进入半导体层22中，影响光电探测基板的性能，如图5所示，光电探测基板还包括：
位于所述硬质衬底基板34和所述半导体层22之间的第二绝缘层35。第二绝缘层35可以采用氮化硅、氧化硅、氮氧化硅等无机绝缘材料，第二绝缘层35的厚度无需设置的太大，可以为100-200nm。
本实施例中，叉指电极可以直接形成在半导体层22上，为了降低光电探测基板的暗电流，如图4所示，光电探测基板还包括：位于叉指电极和半导体层22之间的第一绝缘层23，第一绝缘层23可以采用氮化硅、氧化硅、氮氧化硅等无机绝缘材料；由于半导体层22是直接形成在硬质衬底基板34上，半导体层22远离硬质衬底基板34一侧也就是半导体层22靠近叉指电极一侧的平坦度较好，因为在叉指电极和半导体层22之间无需设置较厚的有机绝缘层来保证叉指电极靠近半导体层22一侧的平坦度，第一绝缘层23无需采用有机绝缘材料，第一绝缘层23的厚度无需设置的太大，可以小于1um，具体可以为100-200nm，这样有利于减小整个光电探测基板的厚度。平坦层24一般采用有机绝缘材质比如树脂形成，为了避免平坦层24中的杂质进入开关晶体管的有源层36，影响开关晶体管的性能，在平坦层24和开关薄膜晶体管之间还设置有第三绝缘层25，第三绝缘层25可以采用氮化硅、氧化硅、氮氧化硅等无机绝缘材料，第三绝缘层25的厚度无需设置的太大，可以为100-200nm。
本公开的实施例还提供了一种光电探测装置，包括如上所述的光电探测基板。上述光电探测基板为平板状，因此，该光电探测装置可以成为平板探测装置(Flat Panel Detector)。上述光电探测装置具有与前述实施例提供的光电探测基板相同的技术效果，此处不再赘述。
本公开的实施例还提供了一种光电探测基板的制作方法，包括：
提供一衬底基板；
在所述衬底基板上形成半导体层；
在所述半导体层远离所述衬底基板的一侧形成叉指电极；
形成覆盖所述叉指电极层的平坦层；
在所述平坦层远离所述衬底基板的一侧形成开关晶体管，所述开关晶体管通过贯穿所述平坦层的过孔与所述叉指电极连接。
本实施例中，将半导体层直接制作在衬底基板上，衬底基板本身能够提供平坦的表面，这样无需在制作半导体层之前形成平坦层，能够省去在制作半导体层之前制作平坦层的工艺，能够减少光电探测基板中的平坦层的层数，减少平坦层的制作工序，从而能够简化光电探测基板的结构，降低光电检测基板的生产成本，提高光电探测基板的产能；另外，在制作平坦层时，需要进行高温固化，由于温差的存在会导致热胀冷缩现象，光电探测基板内部产生的应力会导致光电探测基板出现膜层剥离、发泡等现象，减少平坦层的层数，还有利于光电探测基板结构的稳定性。
其中，衬底基板可以为柔性衬底基板或硬质衬底基板。
本实施例中，可以将半导体层直接制作在衬底基板上。为了避免衬底基板中的杂质离子进入半导体层中，影响光电探测基板的性能，还可以在形成半导体层之前，在衬底基板上形成第二绝缘层，再在第二绝缘层上形成半导体层。
一些实施例中，在所述衬底基板上形成半导体层包括：
在所述半导体层远离所述衬底基板的一侧表面形成多个凹槽。
所述叉指电极包括梳状的感应子电极和梳状的偏压子电极，感应子电极与偏压子电极交替设置，形成所述叉指电极包括：
在所述凹槽内形成所述感应子电极与偏压子电极。这样半导体层包括位于偏压子电极和感应子电极之间的部分，可以充分利用偏压子电极和感应子电极之间的电场，提高光生载流子的利用率，提升光电流。
一些实施例中，光电探测基板的制作方法还包括：
形成遮光金属层，所述遮光金属层位于所述开关晶体管的有源层朝向柔性衬底基板一侧，所述遮光金属层在所述衬底基板上的正投影与所述凹槽在所述衬底基板上的正投影不重叠，且所述有源层在衬底基板上的正投影落入所述遮光金属层在衬底基板上的正投影内，遮光金属层一方面可以避免外界光照射到开关晶体管的有源层上，影响开关晶体管的性能；另一方面，遮光金属层可以对外界入射的光线进行反射，形成二次光路，使得反射后的光线再次进入半导体层，增加半导体层对光的吸收，使得半导体层产生更多的光生载流子，有利于增加光电流，这样半导体层的厚度无需设置的过大，可以降低半导体层的厚度。
一些实施例中，可以通过一次构图工艺同时形成遮光金属层和叉指电极，无需通过专门的构图工艺来形成遮光金属层，能够减少制作光电探测基板的构图工艺的次数。
一些实施例中，为了降低光电探测基板的暗电流，光电探测基板的制作方法还包括：
形成位于叉指电极和半导体层之间的第一绝缘层，第一绝缘层可以采用氮化硅、氧化硅、氮氧化硅等无机绝缘材料。
一些实施例中，为了避免平坦层中的杂质进入开关晶体管的有源层，影响开关晶体管的性能，光电探测基板的制作方法还包括：
形成位于平坦层和开关薄膜晶体管之间的第三绝缘层，第三绝缘层可以采用氮化硅、氧化硅、氮氧化硅等无机绝缘材料。
本公开的一些实施例中，形成半导体层之前，光电探测基板的制作方法还包括：
形成波长转换层，波长转换层位于所述半导体层远离叉指电极的一侧，这样外界光线在进入半导体层之间先进入波长转换层。
本公开的一些实施例中，上述波长转换层能够将非可见光(例如X射线)转换成波长为550nm左右的可见光。在此情况下，经过波长转换层的可见光再入射至半导体层进行光电转换。
需要说明，本说明书中的各个实施例均采用递进的方式描述，各个实施 例之间相同相似的部分互相参见即可，每个实施例重点说明的都是与其他实施例的不同之处。尤其，对于实施例而言，由于其基本相似于产品实施例，所以描述得比较简单，相关之处参见产品实施例的部分说明即可。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
在上述实施方式的描述中，具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (24)

  1. 一种光电探测基板，包括：
    衬底基板；
    设置在所述衬底基板上的半导体层，
    其中，所述半导体层用于将光信号转换为电信号。
  2. 根据权利要求1所述的光电探测基板，还包括：
    位于所述半导体层远离所述衬底基板一侧的叉指电极；
    位于所述叉指电极远离所述衬底基板一侧的平坦层；
    位于所述平坦层远离所述衬底基板一侧的开关晶体管，所述开关晶体管通过贯穿所述平坦层的过孔与所述叉指电极连接。
  3. 根据权利要求2所述的光电探测基板，其中，所述叉指电极包括梳状的感应子电极和梳状的偏压子电极，所述感应子电极与所述偏压子电极交替设置。
  4. 根据权利要求3所述的光电探测基板，其中，所述半导体层远离所述衬底基板的一侧表面设置有多个凹槽，所述感应子电极和所述偏压子电极位于所述凹槽内。
  5. 根据权利要求4所述的光电探测基板，其中，所述半导体层远离所述衬底基板的一侧表面设置有遮光金属层，所述遮光金属层在所述衬底基板上的正投影与所述凹槽在所述衬底基板上的正投影不重叠。
  6. 根据权利要求5所述的光电探测基板，其中，所述遮光金属层与所述叉指电极的材料相同。
  7. 根据权利要求5所述的光电探测基板，其中，所述光电探测基板包括多条读取信号线和选通信号线，所述读取信号线与所述选通信号线交叉界定多个检测单元；
    每个所述检测单元内设置有一个所述叉指电极和一个所述开关晶体管；
    所述开关晶体管的栅极与所述选通信号线电连接，第一极与所述感应子电极电连接，第二极与所述读取信号线电连接。
  8. 根据权利要求7所述的光电探测基板，其中，所述开关晶体管的有源层在所述衬底基板上的正投影落入所述遮光金属层在所述衬底基板上的正投影内。
  9. 根据权利要求2所述的光电探测基板，其中，所述光电探测基板还包括：
    位于所述叉指电极和所述半导体层之间的第一绝缘层。
  10. 根据权利要求2所述的光电探测基板，其中，所述光电探测基板还包括：
    位于所述衬底基板和所述半导体层之间的第二绝缘层。
  11. 根据权利要求2所述的光电探测基板，其中，所述叉指电极与所述半导体层直接物理接触。
  12. 根据权利要求1-11中任一项所述的光电探测基板，其中，所述叉指电极的厚度为200-260nm。
  13. 根据权利要求1-11中任一项所述的光电探测基板，其中，所述半导体层的厚度为250-300nm。
  14. 根据权利要求1-11中任一项所述的光电探测基板，其中，所述衬底基板为光波导玻璃基板或柔性基板。
  15. 根据权利要求1-11中任一项所述的光电探测基板，其中，所述光电探测基板还包括用于将非可见光转换为可见光的波长转换层；
    所述波长转换层位于所述半导体层远离所述叉指电极的一侧。
  16. 一种光电探测装置，包括如权利要求1-15任一项所述的光电探测基板。
  17. 一种光电探测基板的制作方法，包括：
    提供一衬底基板；
    在所述衬底基板上形成半导体层，其中，所述半导体层用于将光信号转换为电信号。
  18. 根据权利要求17所述的制作方法，还包括：
    在所述半导体层远离所述衬底基板的一侧形成叉指电极；
    形成覆盖所述叉指电极的平坦层；
    在所述平坦层远离所述衬底基板的一侧形成开关晶体管，所述开关晶体管通过贯穿所述平坦层的过孔与所述叉指电极连接。
  19. 根据权利要求18所述的制作方法，其中，所述叉指电极包括梳状的感应子电极和梳状的偏压子电极，所述感应子电极与偏压子电极交替设置，
    在所述衬底基板上形成半导体层包括：在所述半导体层远离所述衬底基板的一侧表面形成多个凹槽，
    所述在所述半导体层远离所述衬底基板的一侧形成叉指电极包括：在所述凹槽内形成所述感应子电极与偏压子电极。
  20. 根据权利要求18所述的制作方法，还包括：
    形成遮光金属层，所述遮光金属层位于所述开关晶体管的有源层朝向衬底基板一侧，所述遮光金属层在所述衬底基板上的正投影与所述凹槽在所述衬底基板上的正投影不重叠，且所述有源层在衬底基板上的正投影落入所述遮光金属层在衬底基板上的正投影内。
  21. 根据权利要求20所述的制作方法，其中，通过一次构图工艺形成所述遮光金属层和叉指电极。
  22. 根据权利要求18所述的制作方法，还包括：
    形成位于所述叉指电极和半导体层之间的第一绝缘层。
  23. 根据权利要求18所述的制作方法，还包括：
    形成位于所述平坦层和开关晶体管之间的第三绝缘层。
  24. 根据权利要求18所述的制作方法，还包括：在形成半导体层之前，
    形成波长转换层，所述波长转换层位于所述半导体层远离叉指电极的一侧，并且用于将非可见光转换为可见光。
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CN101969080A (zh) * 2010-08-10 2011-02-09 电子科技大学 一种黑硅msm结构光电探测器及其制备方法
CN108962928A (zh) * 2018-07-13 2018-12-07 京东方科技集团股份有限公司 一种探测面板及探测装置
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