WO2021182813A3 - 볼로미터 멤스 소자 및 볼로미터 멤스 소자의 제조 방법 - Google Patents

볼로미터 멤스 소자 및 볼로미터 멤스 소자의 제조 방법 Download PDF

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Publication number
WO2021182813A3
WO2021182813A3 PCT/KR2021/002799 KR2021002799W WO2021182813A3 WO 2021182813 A3 WO2021182813 A3 WO 2021182813A3 KR 2021002799 W KR2021002799 W KR 2021002799W WO 2021182813 A3 WO2021182813 A3 WO 2021182813A3
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WO
WIPO (PCT)
Prior art keywords
mems device
metal pad
lower substrate
absorption plate
bolometer
Prior art date
Application number
PCT/KR2021/002799
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English (en)
French (fr)
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WO2021182813A2 (ko
Inventor
오재섭
이종권
박종철
김태현
김광희
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한국과학기술원
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Application filed by 한국과학기술원 filed Critical 한국과학기술원
Publication of WO2021182813A2 publication Critical patent/WO2021182813A2/ko
Publication of WO2021182813A3 publication Critical patent/WO2021182813A3/ko

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00039—Anchors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00055—Grooves
    • B81C1/00063—Trenches
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00087—Holes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0278—Temperature sensors

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Micromachines (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

본 발명의 일 실시예에 따른 멤스 소자는, 하부 기판; 및 상기 하부 기판에 형성된 적외선 센서를 포함한다. 상기 적외선 센서는, 상기 하부 기판의 상부면에 형성되어 검출회로와 전기적으로 연결되는 금속 패드; 상기 금속 패드와 동일한 평면에 배치되고 상기 하부 기판의 상부면에 형성되고 적외선 대역을 반사하는 반사층; 상기 반사층을 덮도록 배치되고 광경로 거리를 변경하는 투과층; 상기 투과층의 상부에 이격되어 형성되고 적외선을 흡수하여 저항을 변화시키는 흡수판; 및 상기 금속 패드의 상부에 형성되어 상기 흡수판을 지지하고 상기 금속 패드와 상기 흡수판을 전기적으로 연결하는 앵커를 포함한다. 상기 반사층의 상부면과 상기 흡수판의 하부면 사이의 거리는 특정 적외선 파장에서 파장/4 보다 작다.
PCT/KR2021/002799 2020-03-10 2021-03-08 볼로미터 멤스 소자 및 볼로미터 멤스 소자의 제조 방법 WO2021182813A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020200029504A KR102358860B1 (ko) 2020-03-10 2020-03-10 볼로미터 멤스 소자 및 볼로미터 멤스 소자의 제조 방법
KR10-2020-0029504 2020-03-10

Publications (2)

Publication Number Publication Date
WO2021182813A2 WO2021182813A2 (ko) 2021-09-16
WO2021182813A3 true WO2021182813A3 (ko) 2021-11-11

Family

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PCT/KR2021/002799 WO2021182813A2 (ko) 2020-03-10 2021-03-08 볼로미터 멤스 소자 및 볼로미터 멤스 소자의 제조 방법

Country Status (2)

Country Link
KR (2) KR102358860B1 (ko)
WO (1) WO2021182813A2 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102120912B1 (ko) * 2018-11-28 2020-06-09 한국과학기술원 곡면 반사층을 가지는 멤스 소자 및 멤스 디바이스의 제조 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008241438A (ja) * 2007-03-27 2008-10-09 Nec Corp ボロメータ型ＴＨｚ波検出器
JP2012194080A (ja) * 2011-03-17 2012-10-11 Nec Corp ボロメータ型ＴＨｚ波検出器
KR101408905B1 (ko) * 2013-04-25 2014-06-19 한국과학기술원 고 응답 멤스 디바이스 및 그 제조방법
KR20170129402A (ko) * 2016-05-17 2017-11-27 한국과학기술원 멤스 디바이스 제조 방법
KR102001385B1 (ko) * 2018-01-15 2019-07-19 한국과학기술원 광대역 흡수구조를 갖는 고성능 볼로미터

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008241438A (ja) * 2007-03-27 2008-10-09 Nec Corp ボロメータ型ＴＨｚ波検出器
JP2012194080A (ja) * 2011-03-17 2012-10-11 Nec Corp ボロメータ型ＴＨｚ波検出器
KR101408905B1 (ko) * 2013-04-25 2014-06-19 한국과학기술원 고 응답 멤스 디바이스 및 그 제조방법
KR20170129402A (ko) * 2016-05-17 2017-11-27 한국과학기술원 멤스 디바이스 제조 방법
KR102001385B1 (ko) * 2018-01-15 2019-07-19 한국과학기술원 광대역 흡수구조를 갖는 고성능 볼로미터

Also Published As

Publication number Publication date
KR20210114174A (ko) 2021-09-23
WO2021182813A2 (ko) 2021-09-16
KR102587111B1 (ko) 2023-10-12
KR20220019739A (ko) 2022-02-17
KR102358860B1 (ko) 2022-02-07

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