WO2021182010A1 - Powder film forming device and powder film forming method - Google Patents

Powder film forming device and powder film forming method Download PDF

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Publication number
WO2021182010A1
WO2021182010A1 PCT/JP2021/005227 JP2021005227W WO2021182010A1 WO 2021182010 A1 WO2021182010 A1 WO 2021182010A1 JP 2021005227 W JP2021005227 W JP 2021005227W WO 2021182010 A1 WO2021182010 A1 WO 2021182010A1
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WO
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Prior art keywords
powder
gas
film forming
raw material
accommodating portion
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PCT/JP2021/005227
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French (fr)
Japanese (ja)
Inventor
藤井 博文
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株式会社神戸製鋼所
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Publication of WO2021182010A1 publication Critical patent/WO2021182010A1/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Definitions

  • the present invention relates to a powder film forming apparatus and a powder film forming method for forming a film forming process on powder.
  • an atomic layer deposition treatment technique is known as a technique for forming a film on a powder.
  • this technique by alternately exposing the powder to two kinds of raw material gases, a film can be formed on the powder by the mutual reaction of the respective raw material gases.
  • Patent Document 1 discloses a technique in which powder laminated on a belt conveyor is conveyed by the belt conveyor so as to pass through a plurality of gas accommodating portions, and a film is sequentially formed on the powder. .. Further, in Patent Document 2, in a state where the reaction vessel is filled with the first raw material gas, the powder is dropped in the reaction vessel to attach the ions of the first raw material gas onto the powder, and the reaction vessel is described. Disclosed is a technique for forming a film on the powder by completely discharging the first raw material gas from the above, and then dropping the powder again in a state where the reaction vessel is filled with the second raw material gas. There is.
  • An object of the present invention is a powder film forming apparatus and a powder capable of continuously performing a film forming process on a powder while suppressing contact between raw material gases other than the surface of the particles constituting the powder.
  • the purpose is to provide a film forming method.
  • a powder film forming apparatus for performing a film forming process on powder
  • the apparatus main body a first gas supply unit capable of supplying a first raw material gas
  • the first gas supply unit capable of supplying a second raw material gas
  • a second gas supply unit capable of supplying a second source gas different from the first source gas, and gas molecules of the first source gas and gas molecules of the second source gas provided in the main body of the apparatus.
  • At least one film forming process section in which a powder flow path that allows powder to flow in the direction is formed, and the at least one film forming process section continuously distributes powder along the powder flow path. It is equipped with a powder moving mechanism that can be moved to.
  • the at least one film forming processing unit constitutes the bottom portion of the powder flow path, and constitutes a plurality of powder storage portions for storing powder and the top portion of the powder flow path, respectively.
  • a plurality of gas storage units that connect adjacent powder storage units to each other and store gas inside, and receive the first raw material gas from the first gas supply unit.
  • a plurality of gas accommodating units including at least a first gas accommodating unit for accommodating the first raw material gas and a second gas accommodating unit for receiving the second raw material gas from the second gas supply unit and accommodating the second raw material gas.
  • the powder transfer mechanism has the above, and the powder is exposed to the gas in the gas accommodating portion by flowing into the gas accommodating portion from the powder accommodating portion, and the powder is exposed from the gas accommodating portion to the next powder.
  • the powder is moved in the powder flow path so as to flow into the body storage section, and the plurality of powder storage sections allow gas to flow along the powder flow path between adjacent gas storage sections. It has a shape for storing powder so that this can be suppressed by the stored powder.
  • a powder forming method for forming a film on a powder, which has a plurality of tops and a plurality of bottoms and moves to intersect the vertical direction while meandering up and down.
  • a gas accommodating step of accommodating a second raw material gas different from the first raw material gas at another top on the downstream side in the direction, and the powder flow path in the main body of the apparatus are continuous with the powder in the moving direction.
  • the powder is exposed to the first raw material gas and the second raw material gas in order by moving to, and the particles of the powder are reacted by the reaction between the gas molecules of the first raw material gas and the gas molecules of the second raw material gas. It is provided with a film forming step of performing a film forming process on the surface of the above.
  • FIG. 1 is a schematic normal cross-sectional view of the powder film forming apparatus according to the first embodiment of the present invention.
  • FIG. 2 is a schematic normal cross-sectional view of the powder film forming apparatus according to the second embodiment of the present invention.
  • FIG. 3 is a schematic normal cross-sectional view of the powder film forming apparatus according to the third embodiment of the present invention.
  • FIG. 4 is a schematic perspective view of the powder film forming apparatus according to the fourth embodiment of the present invention.
  • FIG. 5 is a schematic horizontal sectional view of the powder film forming apparatus according to the fifth embodiment of the present invention.
  • FIG. 6 is a schematic perspective perspective view of the powder film forming apparatus according to the fifth embodiment of the present invention.
  • FIG. 7 is a schematic normal cross-sectional view of the powder film forming apparatus according to the modified embodiment of the present invention.
  • FIG. 1 is a schematic normal cross-sectional view of the powder film forming apparatus 1 according to the present embodiment.
  • the powder film forming apparatus 1 includes an apparatus main body 10, a raw material gas exhaust unit 120, a first gas supply unit 121, a purge gas supply unit 122, a second gas supply unit 123, a purge gas exhaust unit 124, and powder. It has a moving mechanism 125 and.
  • alumina Al 2 O 3
  • powder for example, metal powder or iron powder
  • the apparatus main body 10 corresponds to the main body portion of the powder film forming apparatus 1, and has a rectangular parallelepiped housing structure in the present embodiment. As will be described in detail later, a powder flow path 100 that allows powder to flow is formed inside the apparatus main body 10 so as to pass through a plurality of gas accommodating portions.
  • the raw material gas exhaust unit 120 is composed of a vacuum pump, and each gas accommodating unit in the apparatus main body 10 is evacuated (vacuum drawing).
  • the raw material gas exhaust unit 120 includes a first gas exhaust unit 120A and a second gas exhaust unit 120B.
  • the first gas exhaust unit 120A puts the first gas accommodating unit 101 in a vacuum state and exhausts the first raw material gas from the first gas accommodating unit 101.
  • the second gas exhaust unit 120B puts the second gas accommodating unit 103 in a vacuum state and exhausts the second raw material gas from the second gas accommodating unit 103.
  • the first gas supply unit 121 is capable of supplying the first raw material gas to the first gas storage unit 101 in the apparatus main body 10.
  • TMA Trimethylaluminum
  • the second gas supply unit 123 is capable of supplying a second raw material gas different from the first raw material gas to the second gas accommodating unit 103 in the apparatus main body 10.
  • water vapor (H 20 ) or oxygen plasma is used as the second raw material gas.
  • the purge gas supply unit 122 is capable of supplying purge gas to the purge gas accommodating unit 102 in the apparatus main body 10.
  • the purge gas is a gas different from the first raw material gas and the second raw material gas, and is for removing excess of the first raw material gas and the second raw material gas from the powder.
  • nitrogen gas is used as the purge gas.
  • the purge gas exhaust unit 124 includes a vacuum pump provided independently of the raw material gas exhaust unit 120, and exhausts the purge gas from the purge gas accommodating unit 102.
  • the powder transfer mechanism 125 is capable of continuously moving the powder F along the powder flow path 100 in the film forming processing unit 100C described later in the apparatus main body 10.
  • the powder moving mechanism 125 generates vibration that gives vibration to the apparatus main body 10 in a specific direction (arrow D1 in FIG. 1) including a moving direction (right direction) and a vertical direction of the powder F, respectively. Including part.
  • the apparatus main body 10 has a supply-side storage chamber 100A, a discharge-side storage chamber 100B, and a plurality of film-forming processing units 100C arranged between the supply-side storage chamber 100A and the discharge-side storage chamber 100B.
  • the supply-side storage chamber 100A is arranged at the left end of the apparatus main body 10, and a powder supply port 10P for receiving the powder F is opened on the upper surface thereof.
  • the discharge side storage chamber 100B is arranged at the right end portion of the apparatus main body 10, and a powder discharge port 10Q for discharging the powder F is opened on the lower surface portion thereof.
  • a cover (not shown) that can be opened and closed is attached to each of the powder supply port 10P and the powder discharge port 10Q.
  • the plurality of film forming processing units 100C each form a film on the surface of the particles constituting the powder F by the reaction between the gas molecules of the first raw material gas and the gas molecules of the second raw material gas.
  • FIG. 1 shows in detail one of the plurality of film forming processing units 100C, the film forming processing unit 100C.
  • other film forming processing units 100C are continuously arranged on the upstream side (left side) and the downstream side (right side) of the film forming processing unit 100C of FIG. 1, respectively.
  • Such a plurality of film forming processing units 100C form the above-mentioned powder flow path 100.
  • the powder flow path 100 has a plurality of tops and a plurality of bottoms, and the powder F moves in a horizontal moving direction (right direction) while meandering up and down. Allow to flow.
  • the film forming processing unit 100C includes a first gas accommodating unit 101, each of which constitutes the top of the powder flow path 100, and one purge gas accommodating unit 102 and a second purge gas accommodating unit 102 arranged on the downstream side of the first gas accommodating unit 101.
  • the gas accommodating portion 103, another purge gas accommodating portion 102 (above, a plurality of gas accommodating portions) arranged on the downstream side of the second gas accommodating portion 103, and the other gas accommodating portions 102 are arranged adjacent to each other below these gas accommodating portions.
  • the first gas accommodating portion 101 constitutes a part of the powder flow path 100.
  • the first gas accommodating unit 101 receives the first raw material gas from the first gas supply unit 121 and accommodates the first raw material gas.
  • the second gas accommodating portion 103 constitutes a part of the powder flow path 100.
  • the second gas accommodating unit 103 is arranged downstream of the first gas accommodating unit 101 in the moving direction, receives the second raw material gas from the second gas supply unit 123, and accommodates the second raw material gas.
  • Each purge gas accommodating unit 102 is arranged between the first gas accommodating unit 101 and the second gas accommodating unit 103 in the powder flow in the powder flow path 100, receives the purge gas from the purge gas supply unit 122, and receives the purge gas. Contain.
  • the plurality of powder storage units 105 are arranged below the first gas storage unit 101, the purge gas storage unit 102, and the second gas storage unit 103 so as to straddle different gas storage units.
  • each of the plurality of gas accommodating portions connects the adjacent powder storage portions 105 of the plurality of powder storage portions 105 to each other.
  • each powder storage unit 105 stores powder F up to the vicinity of the upper end portion of the second partition portion 112 described later.
  • the plurality of powder storage units 105 store the powder so that the flowing of gas along the powder flow path 100 between the adjacent gas storage units can be suppressed by the stored powder. It has a shape to store.
  • the apparatus main body 10 includes a bottom wall 10B, a top wall 10T arranged above the bottom wall 10B, a plurality of first partition portions 111 (at least three first partition portions), and a plurality of first partition portions 111. It has a second partition portion 112 (a plurality of second partition portions) of the above.
  • the plurality of first partition portions 111 are arranged on the top wall 10T of the apparatus main body 10 at intervals in the moving direction, and extend downward from the top wall 10T to define the powder flow path 100. doing.
  • Each first partition 111 has a tip (lower end, first partition tip) arranged at predetermined intervals with respect to the bottom wall 10B.
  • the plurality of second partition portions 112 are arranged on the bottom wall 10B of the apparatus main body 10 so as to be arranged between the first partition portions 111 adjacent to each other in the moving direction among the plurality of first partition portions 111. They are arranged at intervals in the moving direction and extend upward from the bottom wall 10B to define the powder flow path 100.
  • Each second partition 112 has a tip (upper end, second partition tip) arranged at a predetermined interval with respect to the top wall 10T.
  • a plurality of pairs of first partition portions 111 adjacent to each other in the moving direction are at least the second partition portion in the space between the first partition portions 111.
  • a first gas accommodating portion 101, a purge gas accommodating portion 102, and a second gas accommodating portion 103 are defined in a portion above the tip end portion of the 112.
  • a plurality of pairs (at least a pair) of the second partition portions 112 adjacent to each other in the moving direction are the first partition portions 111 (first) between the second partition portions 112.
  • the powder storage portions 105 are defined so as to sandwich the partition tip portion) from both the left and right sides.
  • the powder F is charged into the supply side storage chamber 100A from the powder supply port 10P while the powder moving mechanism 125 applies vibration in the direction indicated by the arrow D1 to the apparatus main body 10. Then, the powder F moves to the downstream side in the moving direction in response to the vibration.
  • the powder F stored in the powder storage unit 105 located on the most upstream side of the film forming processing unit 100C dives under the first partition portion 111 as shown by the arrow D2, as shown by the arrow D3. , Overcome the second partition 112. While repeating such movements, powder F is eventually stored in each powder storage unit 105 as shown in FIG.
  • the first gas supply unit 121, the purge gas supply unit 122, and the second gas supply unit 123 supply the corresponding gas to the first gas storage unit 101, the purge gas storage unit 102, and the second gas storage unit 103, respectively. ..
  • the powder F stored in each powder storage unit 105 defines and seals the lower surface portion of each gas storage unit.
  • the first gas supply unit 121, the purge gas supply unit 122, and the second gas supply unit 123 may supply gas in order from the gas storage unit sealed by the powder F. In this way, in the film forming processing unit 100C, the powder F passes through the first gas accommodating unit 101, the purge gas accommodating unit 102, the second gas accommodating unit 103, and the other purge gas accommodating unit 102 in this order.
  • trimethylaluminum functioning as a precursor adheres to the surface of the particles of the powder F.
  • one aluminum group is bonded to the oxygen group on the surface of the particles of the powder F (base) to form a nucleus, and the methyl group in the trimethylaluminum is desorbed from the powder F.
  • the film grows in the lateral direction (direction along the surface) starting from this nucleus, and an aluminum layer (layer) is formed on the particles of the powder F.
  • the oxygen groups on the surface of the particles of the powder F are buried, the aluminum groups cannot adhere to the particles of the powder F any more, so that the trimethylaluminum existing around the powder F becomes a surplus.
  • the powder F enters the purge gas accommodating portion 102 due to the movement by the powder moving mechanism 125, the surplus of trimethylaluminum around the powder F is present together with the purge gas (nitrogen) in the purge gas accommodating portion 102. It is exhausted by the purge gas exhaust unit 124.
  • the film can be continuously formed on the powder F.
  • a purge gas accommodating unit 102 is arranged between the first gas accommodating unit 101 and the second gas accommodating unit 103, and powder stored in the two powder storage units 105.
  • the body F separates (seals) the first gas accommodating portion 101 and the second gas accommodating portion 103 from each other. Therefore, in a portion different from the particle surface constituting the powder F (for example, the inner wall of the first gas accommodating portion 101 and the second gas accommodating portion 103), the first raw material gas (trimethylaluminum) and the second raw material gas (water vapor). ) And react with each other to prevent the formation and adhesion of alumina.
  • the powder F which is initially used only for sealing each gas accommodating portion and has not undergone sufficient film forming treatment is again powdered. It may be put into the supply side storage chamber 100A from the body supply port 10P and reused.
  • the film forming processing unit 100C includes a first gas accommodating unit 101, a first purge gas accommodating unit 102A, a second gas accommodating unit 103, a second purge gas accommodating unit 102B, a first powder storage unit 100J, and a second. It has a powder storage unit 100K and two intermediate powder storage units 100M and 100N.
  • a first purge gas accommodating unit 102A is arranged between the first gas accommodating unit 101 and the second gas accommodating unit 103.
  • a second purge gas accommodating portion 102B is arranged on the downstream side of the second gas accommodating portion 103 (between the second gas accommodating portion 103 and the next first gas accommodating portion 101).
  • the first purge gas accommodating portion 102A and the second purge gas accommodating portion 102B form a part of the powder flow path 100. Further, the first purge gas accommodating unit 102A and the second purge gas accommodating unit 102B receive the purge gas from the purge gas supply unit 122 and accommodate the purge gas.
  • the first powder storage unit 100J corresponds to the powder storage unit 105 immediately upstream of the first gas storage unit 101 in FIG. 1.
  • the first powder storage unit 100J constitutes a part of the powder flow path 100.
  • the first powder storage unit 100J communicates with the upstream portion of the first gas storage unit 101 in the moving direction from below, and can store the powder F supplied to the first gas storage unit 101. ing.
  • the first powder storage unit 100J stores the powder F so as to prevent the first raw material gas from flowing from the first gas storage unit 101 to the purge gas storage unit 102 on the upstream side of the first gas storage unit 101. do.
  • the first powder storage section 100J is from the first gas accommodating section 101 to the supply side storage chamber 100A. The flow of the first raw material gas is suppressed.
  • the second powder storage unit 100K corresponds to the powder storage unit 105 immediately upstream of the second gas storage unit 103 in FIG. 1.
  • the second powder storage unit 100K constitutes a part of the powder flow path 100.
  • the second powder storage unit 100K communicates with the upstream portion of the second gas storage unit 103 in the moving direction from below, and can store the powder F supplied to the second gas storage unit 103.
  • the second powder storage unit 100K communicates with the downstream portion of the first purge gas storage unit 102A in the moving direction from below, and can receive the powder F that has passed through the first purge gas storage unit 102A. ing.
  • the intermediate powder storage unit 100M communicates with each of the downstream portion of the first gas accommodating portion 101 in the moving direction and the upstream portion of the first purge gas accommodating portion 102A in the moving direction from below, and the powder F is communicated with each other. It is possible to store.
  • the intermediate powder storage unit 100M is a powder so as to prevent the first raw material gas and the purge gas from flowing between the first gas storage unit 101 and the first purge gas storage unit 102A by the stored powder F, respectively. Store body F.
  • the intermediate powder storage unit 100N corresponds to the powder storage unit 105 immediately downstream of the second gas storage unit 103.
  • the intermediate powder storage unit 100N constitutes a part of the powder flow path 100.
  • the intermediate powder storage unit 100N communicates with the downstream portion of the second gas storage unit 103 in the moving direction from below, and can store (accept) the powder F that has passed through the second gas storage unit 103. Has been done.
  • the intermediate powder storage unit 100N communicates with the upstream portion of the second purge gas storage unit 102B in the moving direction from below, and stores and stores the powder F supplied to the second purge gas storage unit 102B.
  • the powder F is stored so as to suppress the flow of the second raw material gas and the purge gas between the second gas accommodating portion 103 and the second purge gas accommodating portion 102B, respectively.
  • the purge gas supply unit 122 of FIG. 1 has a flow rate control valve 122C (see FIG. 2, pressure adjusting mechanism) capable of controlling the supply amount of the purge gas to the purge gas accommodating unit 102.
  • a flow rate control valve 122C see FIG. 2, pressure adjusting mechanism capable of controlling the supply amount of the purge gas to the purge gas accommodating unit 102.
  • the pressure of the first purge gas accommodating portion 102A and the pressure of the second purge gas accommodating portion 102B are lower than the pressure of the first gas accommodating portion 101 and the pressure of the second gas accommodating portion 103.
  • the pressure of the first purge gas accommodating portion 102A and the pressure of the second purge gas accommodating portion 102B are adjusted respectively.
  • the purge gas exhaust unit 124 exhausts the purge gas from the first purge gas accommodating unit 102A and the second purge gas accommodating unit 102B, respectively.
  • each purge gas accommodating portion 102 is set to a negative pressure with respect to the first gas accommodating portion 101 and the second gas accommodating portion 103, the first raw material gas and the second raw material gas remaining in the powder F are charged. The surplus is likely to be attracted to each purge gas accommodating portion 102. Therefore, the purge gas exhaust unit 124 can reliably exhaust these excess gases together with the purge gas.
  • the raw material gas exhaust unit 120 and the purge gas exhaust unit 124 exhaust the gas from the first gas accommodating unit 101, the purge gas accommodating unit 102, and the second gas accommodating unit 103. Therefore, since the required amount of raw material gas can be supplied while evacuating each gas accommodating portion, the purity of the raw material gas in each gas accommodating portion can be increased. As a result, the powder F can be subjected to a high-purity film forming process.
  • the powder moving mechanism 125 continuously moves the powder F through the powder flow path 100 of the film forming processing section 100C, so that the powder F is transferred to the first gas accommodating section.
  • a film is continuously formed on the surface of the particles of the powder F by undergoing the reaction of the gas molecules of both gases. Can be formed.
  • each powder storage unit 105 arranged between the first gas storage unit 101 and the second gas storage unit 103 of the film forming processing unit 100C has the first gas storage unit 101 and the first gas storage unit 105 depending on the powder F to be stored. 2
  • the space between the gas accommodating portion 103 and the gas accommodating portion 103 can be sealed.
  • the first gas accommodating unit 101 and the second gas accommodating unit 103 are alternately arranged along the moving direction, and the plurality of gas accommodating units are arranged as described above.
  • a plurality of purge gases that are arranged between the first gas accommodating portion 101 and the second gas accommodating portion 103 in the flow of the powder F in the powder flow path 100, receive the purge gas from the purge gas supply unit 122, and accommodate the purge gas.
  • It further has an accommodating portion 102.
  • the first raw material gas and the second raw material gas are prevented from coming into contact with each other except on the surface of the particles of the powder F, and the powder F passing through the second gas accommodating portion 103 is the second to the powder F. 2
  • the surplus of the raw material gas can be removed in the second purge gas accommodating portion 102B. Therefore, it is possible to prevent the surplus second raw material gas from reacting with the first raw material gas in the next treatment step to generate a reaction product independent of the powder F.
  • the plurality of first partition portions 111 and the plurality of second partition portions 112 arranged in the apparatus main body 10 form a powder flow path 100 meandering up and down in the apparatus main body 10.
  • the first gas accommodating unit 101, the second gas accommodating unit 103, and the powder storage unit 105 can be defined, respectively.
  • the powder is compared with the case where the gas accommodating portion and the powder accommodating portion are arranged apart from each other. The size of the powder film forming apparatus 1 in the moving direction of F can be reduced.
  • the powder F that has passed through the first gas accommodating portion 101 and the second gas accommodating portion 103 of one film forming processing unit 100C is the first of the other film forming processing unit 100C on the further downstream side.
  • a plurality of film forming processing units 100C are connected to each other in the apparatus main body 10 so as to pass through the gas accommodating unit 101 and the second gas accommodating unit 103, and a continuous powder flow path 100 is formed.
  • the second purge gas accommodating unit 102B of the film forming processing unit 100C of one of the plurality of film forming processing units 100C moves more than the film forming processing unit 100C of one of the plurality of film forming processing units 100C.
  • the first powder storage unit 100J communicates with the first powder storage unit 100J of another film formation processing unit 100C on the downstream side in the direction, and the first powder storage unit 100J is connected to the one film formation processing unit 100C by the stored powder F.
  • the powder F is added so as to prevent the first raw material gas and the second raw material gas from flowing between the second gas accommodating portion 103 and the first gas accommodating portion 101 of the other film forming processing unit 100C. It is stored. Therefore, the film forming process for the powder F can be continuously and efficiently performed in the plurality of film forming processing units 100C.
  • the second purge gas accommodating unit 102B which is arranged between the second gas accommodating unit 103 of the one film forming processing unit 100C and the first gas accommodating unit 101 of the other film forming processing unit 100C, is also described above. Similarly, it has a function of suppressing the contact of the raw material gas.
  • the powder moving mechanism 125 includes a vibration generating portion capable of applying vibration to the apparatus main body 10. Therefore, by applying vibration in a specific direction to the apparatus main body 10, it is possible to apply a moving force for moving the powder flow path 100 to the powder F. Therefore, the powder F can be stably moved so as to pass through each gas accommodating portion without having a mechanical moving mechanism that directly contacts the powder F like a rotating blade member.
  • the apparatus can be simplified and the particles constituting the powder F can be prevented from being crushed by the mechanical moving force. be able to.
  • the powder film forming method according to the present embodiment is a powder film forming method in which a powder is subjected to a film forming process, and has a plurality of tops and a plurality of bottoms and moves horizontally while meandering up and down.
  • the powder F is exposed to the first raw material gas and the second raw material gas in order, and by the reaction between the gas molecules of the first raw material gas and the gas molecules of the second raw material gas. It includes a film forming step of performing a film forming process on the surface of the particles of the powder F.
  • the powder F is sequentially exposed to the first raw material gas and the second raw material gas at a plurality of tops, so that the powder F undergoes the reaction of both gases to continuously form a film on the powder F. Can be formed. Further, the stored powder F can seal between a plurality of tops of the powder flow path 100. Therefore, the movement of each raw material gas between the plurality of tops is suppressed. As a result, it is possible to prevent the raw material gases from coming into contact with each other at a portion different from the surface of the particles constituting the powder F, and to prevent the two gases from reacting with each other.
  • the film forming step includes moving the powder F in the moving direction by applying vibrations in specific directions including the moving direction and the vertical direction to the apparatus main body 10. .. According to such a method, the powder F can be stably moved so as to pass through each top.
  • FIG. 2 is a schematic normal cross-sectional view of the powder film forming apparatus 1 according to the second embodiment of the present invention.
  • each raw material gas and purge gas are supplied from above to the first gas accommodating portion 101, the purge gas accommodating portion 102, and the second gas accommodating portion 103, but the present invention is limited thereto. It is not something that is done.
  • the first gas supply unit 121 includes a first gas tank 121A for accommodating the first raw material gas and a first gas nozzle 121B.
  • the purge gas supply unit 122 has a purge gas tank 122A (gas tank) for storing the purge gas and a purge gas nozzle 122B
  • the second gas supply unit 123 has a second gas tank 123A for storing the second raw material gas and a second gas tank 123A. It has two gas nozzles 123B. At least one of the first gas supply unit 121, the purge gas supply unit 122, and the second gas supply unit 123 may have the above-mentioned structure.
  • the first gas nozzle 121B, the purge gas nozzle 122B, and the second gas nozzle 123B are the first powder storage unit 100J, the intermediate powder storage unit 100M, and 100N in FIG. 1, respectively.
  • the gas accommodating portion is directed toward the upstream portion of the gas accommodating portion in which each gas nozzle is arranged on the downstream side of each powder storage portion and further downstream in the flow direction of the powder F. It is arranged so that the same kind of raw material gas can be ejected. Therefore, when the gas nozzle ejects the raw material gas, the powder can be fluidized by the ejection output to promote the transportation by vibration. Assuming that each of the above gas nozzles is arranged in the powder F, the gas nozzles may be arranged on the wall surface or the bottom surface of the powder storage portion, and the tip portion of the nozzle may be exposed in the powder F.
  • FIG. 3 is a schematic normal cross-sectional view of the powder film forming apparatus 1 according to the third embodiment of the present invention.
  • the powder flow path 100 is formed by partitioning the inside of the box-shaped apparatus main body 10 by a plurality of first partition portions 111 and a plurality of second partition portions 112.
  • the apparatus main body 10 may be made of a pipe (pipe material) meandering up and down.
  • the first gas accommodating portion 101, each purge gas accommodating portion 102, and the second gas accommodating portion 103 are formed at the top of the pipe, and the powder storage portion 105 for storing the powder F is formed at the bottom of the pipe.
  • the powder moving mechanism 125 applies vibration to the apparatus main body 10, so that the powder F passes through each gas accommodating portion and a film forming process is performed on the particles constituting the powder F. be able to.
  • FIG. 4 is a schematic perspective view of the powder film forming apparatus 1 according to the fourth embodiment of the present invention.
  • the plurality of film forming processing units 100C according to the first embodiment are connected to each other so that the powder flow path 100 is spirally arranged around a central axis extending in the vertical direction. ..
  • the film forming process for the powder F can be continuously performed in the plurality of film forming processing sections 100C, and the plurality of film forming processing sections 100C are connected to each other along the horizontal direction.
  • the installation area of the powder film forming apparatus 1 can be reduced.
  • the powder moving mechanism 125 When the powder F is conveyed so as to go down the spiral, the powder moving mechanism 125 applies vibration in the direction of arrow D1 in FIG. 4, so that the powder F goes up the spiral. When transporting F, the powder moving mechanism 125 may apply vibration in the direction of arrow D1'in FIG.
  • FIG. 5 and 6 are a schematic horizontal sectional view and a perspective perspective view of the powder film forming apparatus according to the fifth embodiment of the present invention.
  • a single film forming processing unit 100C is arranged in the cylindrical apparatus main body 10, and the upstream side and the downstream side thereof are connected to each other.
  • the second purge gas accommodating portion 102B of the film forming processing unit 100C (FIG. 1) so that the powder F can repeatedly pass through the first gas accommodating portion 101 and the second gas accommodating portion 103 of the same film forming processing unit 100C.
  • (See) communicates with the first powder storage unit 100J (see FIG. 1) of the film forming processing unit 100C (infinite loop shape).
  • the first powder storage unit 100J of the film forming processing unit 100C receives the first raw material gas and the said first raw material gas between the second gas storage unit 103 and the first gas storage unit 101 on the downstream side by the stored powder F.
  • the powder F is stored so as to prevent the flow of the second raw material gas.
  • the vibration in the direction of the arrow D1 in FIG. 6 the powder F goes under each of the first partition portions 111 as shown by the arrows D2 in FIGS. 5 and 6, and as shown by the arrows D3 in FIGS. 5 and 6.
  • the powder F can get over each of the second partition portions 112.
  • the infinite loop-shaped structure as shown in FIGS. 5 and 6 may be a structure in which a plurality of film forming processing units 100C are continuously connected and arranged in a loop shape.
  • the present invention is not limited to these forms, and the following modifications are carried out.
  • the form is possible.
  • the raw material gas exhaust unit 120, the first gas supply unit 121, the purge gas supply unit 122, the second gas supply unit 123, and the purge gas exhaust unit 124 are arranged as shown in FIG.
  • the number of these structures is not limited to the above aspect.
  • one first gas exhaust unit 120A may communicate with a plurality of first gas accommodating units 101 and exhaust the first raw material gas from each of the first gas accommodating units 101.
  • one second gas exhaust unit 120B may communicate with a plurality of second gas accommodating units 103 and exhaust the second raw material gas from each of the second gas accommodating units 103.
  • one purge gas exhaust unit 124 may communicate with a plurality of purge gas accommodating units 102, and the purge gas may be exhausted from each purge gas accommodating unit 102.
  • the number of film forming processing units 100C arranged in the apparatus main body 10 is not limited, and at least one film forming processing unit 100C may be arranged.
  • the device main body 10 is arranged so as to extend in the horizontal direction, but the present invention is not limited to this.
  • the device main body 10 may be arranged at an angle so that the downstream portion in the moving direction of the device main body 10 is located lower than the upstream portion in the moving direction.
  • the powder flow path 100 can be set downward along the moving direction, the movement of the powder F can be promoted under the action of gravity.
  • the powder F is moved in a moving direction including at least a horizontal direction.
  • the apparatus main body 10 may be inclined in the same manner.
  • the first purge gas accommodating unit 102A is arranged between the first gas accommodating unit 101 and the second gas accommodating unit 103, and the second purge gas accommodating unit 102A is located on the downstream side of the second gas accommodating unit 103.
  • the purge gas accommodating portion 102B is arranged has been described, these purge gas accommodating portions 102A and 102B may not be arranged, and only one of the purge gas accommodating portions 102 may be arranged.
  • FIG. 7 is a schematic normal cross-sectional view of the powder film forming apparatus according to the modified embodiment of the present invention.
  • the first gas accommodating portion 101 and the second gas accommodating portion 103 are alternately arranged along the moving direction so as to straddle the first gas accommodating portion 101 and the second gas accommodating portion 103 from below.
  • Each powder storage unit 105 may be arranged. That is, in this modified embodiment, the first purge gas accommodating portion 102A, the second purge gas accommodating portion 102B, the intermediate powder storage portions 100M, and 100N of FIG. 1 are not provided, and each of the plurality of powder storage portions 105 is provided.
  • the first gas accommodating portion 101 and the second gas accommodating portion 103 communicate with the upstream portion of one of the first gas accommodating portions 101 and the second gas accommodating portion 103 in the moving direction from below.
  • the other gas accommodating portion of the gas accommodating portion communicates with the downstream portion in the moving direction from below. According to such a configuration, it is possible to reduce the size of the powder film forming apparatus 1 in the moving direction as compared with the case where the purge gas accommodating portion 102 as in the first embodiment is provided.
  • the purge gas exhaust unit 124 exhausts the purge gas from the first purge gas accommodating unit 102A and the second purge gas accommodating unit 102B, respectively, and each purge gas accommodating unit 101
  • the present invention has been described in the manner in which the negative pressure is set with respect to the second gas accommodating portion 103, but the present invention is not limited thereto.
  • the flow control valve 122C pressure adjusting mechanism sets the pressure of each purge gas accommodating portion so that the pressure of the purge gas accommodating portions 102A and 102B is higher than the pressure of the first gas accommodating portion 101 and the pressure of the second gas accommodating portion 103. May be adjusted.
  • each purge gas accommodating portion is set to a positive pressure with respect to each gas accommodating portion, excess amounts of the first raw material gas and the second raw material gas remaining in the powder flow into each purge gas accommodating portion and come into contact with each other. It can be prevented from doing so.
  • the moving direction of the powder F in the powder film forming apparatus 1 is not limited to the right direction (horizontal direction), but is a substantially horizontal direction inclined upward or downward with respect to the horizontal direction.
  • the powder F may be in a predetermined moving direction that intersects the vertical direction at a sharp angle.
  • the predetermined direction includes a horizontal direction and the substantially horizontal direction.
  • the angle formed by the moving direction and the horizontal direction is preferably set within 60 degrees, and more preferably set within 45 degrees.
  • the first gas accommodating portion 101 and the second gas accommodating portion 103 are alternately arranged along the moving direction, and the first gas accommodating portion 101 and the second gas accommodating portion 103 are arranged alternately.
  • a plurality of purge gas accommodating portions 102 are respectively arranged between the above, even if a plurality of dummy gas accommodating portions that do not accommodate the dedicated gas are arranged in place of the plurality of purge gas accommodating portions 102, respectively. good. That is, the purge gas is not supplied from the purge gas supply unit 122 to the dummy gas storage unit. Even in such a case, it is possible to prevent the first raw material gas and the second raw material gas from coming into contact with each other except on the surface of the particles of the powder F.
  • an exhaust mechanism similar to that of the purge gas exhaust portion 124 is connected to the dummy gas accommodating portion. As a result, it is possible to prevent the first raw material gas and the second raw material gas from coming into contact with each other and staying in the dummy gas accommodating portion.
  • a powder film forming apparatus for performing a film forming process on powder
  • the apparatus main body a first gas supply unit capable of supplying a first raw material gas
  • the first gas supply unit capable of supplying a second raw material gas
  • a second gas supply unit capable of supplying a second source gas different from the first source gas, and gas molecules of the first source gas and gas molecules of the second source gas provided in the main body of the apparatus.
  • At least one film forming process section in which a powder flow path that allows powder to flow in the direction is formed, and the at least one film forming process section continuously distributes powder along the powder flow path. It is equipped with a powder moving mechanism that can be moved to.
  • the at least one film forming processing unit constitutes the bottom portion of the powder flow path, and constitutes a plurality of powder storage portions for storing powder and the top portion of the powder flow path, respectively.
  • a plurality of gas storage units that connect adjacent powder storage units to each other and store gas inside, and receive the first raw material gas from the first gas supply unit.
  • a plurality of gas accommodating units including at least a first gas accommodating unit for accommodating the first raw material gas and a second gas accommodating unit for receiving the second raw material gas from the second gas supply unit and accommodating the second raw material gas.
  • the powder transfer mechanism is exposed to the gas in the gas accommodating portion by flowing the powder from the powder accommodating portion into the gas accommodating portion, and the powder is next from the gas accommodating portion.
  • the powder is moved in the powder flow path so as to flow into the powder storage section, and the plurality of powder storage sections allow gas to flow along the powder flow path between adjacent gas storage sections. It has a shape for storing powder so that the flow can be suppressed by the stored powder.
  • the powder when the powder continuously moves in the powder flow path of the film forming processing portion, the powder is transferred to the first gas accommodating portion and the second gas accommodating portion in the first raw material gas and the second raw material gas. It is possible to continuously form a film on the powder by the reaction of each gas molecule adsorbed on the surface of each particle. Further, the plurality of powder storage units can prevent gas from flowing along the powder flow path between adjacent gas storage units by the stored powder. Therefore, it is possible to prevent the raw material gases from coming into contact with each other except on the surface of the particles constituting the powder.
  • the first gas accommodating portion and the second gas accommodating portion are alternately arranged along the moving direction, and each of the plurality of powder accommodating portions is arranged. , It is desirable that the first gas accommodating portion and the second gas accommodating portion communicate with each other.
  • each powder storage unit of the film forming processing unit communicates with the first gas storage unit and the second gas storage unit, respectively, so that the powder to be stored can be used as the first gas storage unit and the second gas storage unit. It can be sealed between the gas accommodating part. Therefore, the movement of each raw material gas between the first gas accommodating portion and the second gas accommodating portion is suppressed. As a result, it is possible to prevent the raw material gases from coming into contact with each other at a portion different from the surface of the particles constituting the powder, and to prevent the two gases from reacting with each other. Further, the size of the powder film forming apparatus in the moving direction can be reduced as compared with the case where the powder film forming apparatus has another gas accommodating portion that accommodates a gas different from the raw material gas such as a purge gas accommodating portion.
  • a possible purge gas supply unit is further provided, and in the plurality of gas accommodating units, the first gas accommodating unit and the second gas accommodating unit are alternately arranged along the moving direction, and the plurality of gas accommodating units are arranged.
  • a plurality of purge gas accommodating portions that are arranged between the first gas accommodating portion and the second gas accommodating portion in the powder flow in the powder flow path, receive the purge gas from the purge gas supply unit, and accommodate the purge gas. It is desirable to have more.
  • a plurality of purge gas accommodating portions are arranged between the first gas accommodating portion and the second gas accommodating portion to accommodate the purge gas, so that the first raw material gas and the second raw material gas are on the surface of the powder.
  • each purge gas accommodating portion is set to a negative pressure with respect to each gas accommodating portion, excess amounts of the first raw material gas and the second raw material gas remaining in the powder are attracted to each purge gas accommodating portion. Easy to get rid of. Therefore, the exhaust mechanism can reliably exhaust these excess gases together with the purge gas.
  • the pressure adjusting mechanism that adjusts the pressure of the purge gas accommodating portion so that the pressure of the purge gas accommodating portion becomes higher than the pressure of the first gas accommodating portion and the pressure of the second gas accommodating portion.
  • An exhaust mechanism for exhausting the purge gas from the purge gas accommodating portion may be further provided.
  • the purge gas accommodating portion is set to a positive pressure with respect to each gas accommodating portion, the surplus of the first raw material gas and the second raw material gas remaining in the powder flows into each purge gas accommodating portion. It is possible to prevent them from touching each other.
  • the first gas accommodating portion and the second gas accommodating portion are alternately arranged along the moving direction, and the plurality of gas accommodating portions are the powder.
  • An exhaust mechanism that further has a plurality of dummy gas accommodating portions arranged between the first gas accommodating portion and the second gas accommodating portion in the flow of powder in the body flow path, and is connected to the dummy gas accommodating portion. May be further provided.
  • the exhaust mechanism can prevent the first raw material gas and the second raw material gas from coming into contact with each other and staying in the dummy gas accommodating portion.
  • the device main body is arranged on the bottom wall, the top wall arranged above the bottom wall, and the top wall of the device main body at intervals in the moving direction, and the top wall.
  • At least three first partitions extending downward from the surface and defining the powder flow path, each having a first partition tip portion arranged at a predetermined interval with respect to the bottom wall.
  • the movement direction on the bottom wall of the apparatus main body so as to be arranged between the first partition and the first partition adjacent to each other in the movement direction among the at least three first partitions.
  • a plurality of second partition portions that are spaced apart from each other and extend upward from the bottom wall to define the powder flow path, and are arranged at predetermined intervals with respect to the top wall.
  • a plurality of pairs of the first partition portions having a plurality of second partition portions each having a second partition tip portion and adjacent to each other in the moving direction among the at least three first partition portions are at least said.
  • the plurality of gas accommodating portions are defined, and at least a pair of the second partition portions adjacent to each other in the moving direction among the plurality of second partition portions are formed. It is desirable to define the powder storage portion so as to sandwich the tip of the first partition from both sides.
  • the first partition portion and the second partition portion arranged in the main body of the apparatus can define a plurality of gas accommodating portions and powder storage portions, respectively.
  • the gas accommodating portion or the powder accommodating portion is arranged close to each other with each partition portion interposed therebetween, the powder is compared with the case where the gas accommodating portion and the powder accommodating portion are arranged apart from each other. The size of the body film forming apparatus can be reduced.
  • the device main body is inclined so that the downstream portion in the moving direction of the device main body is located lower than the upstream portion in the moving direction.
  • the powder flow path can be arranged in the downward direction along the moving direction, the movement of the powder can be promoted by the action of gravity.
  • the powder that has passed through the first gas accommodating portion and the second gas accommodating portion of the at least one film forming processing unit is the other film forming processing unit of the plurality of film forming processing units. It is desirable that the plurality of film forming processing portions are connected to each other so as to pass through the first gas accommodating portion and the second gas accommodating portion.
  • the film forming process it is possible to continuously perform the film forming process on the powder in a plurality of film forming processing sections, so that the film forming process can be efficiently performed. Further, the flow of the first raw material gas and the second raw material gas between the film forming processing portions can be suppressed by the powder, and the reaction of both gases other than the surface of the particles constituting the powder can be suppressed.
  • the plurality of film forming processing portions are connected to each other so that the powder flow path is spirally arranged around a central axis extending in the vertical direction.
  • the film forming section of the at least one film forming process so that the powder can repeatedly pass through the same first gas accommodating section and the second gas accommodating section of the at least one film forming process section.
  • the portion of the powder flow path downstream of the second gas accommodating portion in the moving direction is the upstream side of the powder flow path of the at least one film forming processing portion in the moving direction of the first gas accommodating portion. It is desirable to communicate with the part.
  • the film formation process can be continuously performed on the powder by repeatedly passing the powder through the same first gas accommodating portion and the second gas accommodating portion. Therefore, as compared with the case where the powder passes through the first gas accommodating portion and the second gas accommodating portion once, it is not necessary to arrange a large number of powder accommodating portions and gas accommodating portions, and the minimum number of powders is required. It can be composed of a storage unit and a gas storage unit.
  • a vacuum pump that exhausts gas from the first gas accommodating portion and the second gas accommodating portion of the at least one film forming processing unit.
  • the required amount of raw material gas can be supplied while evacuating each gas accommodating portion, so that the purity of the raw material gas in each gas accommodating portion can be increased.
  • the powder can be subjected to a high-purity film forming process.
  • the powder moving mechanism includes a vibration generating portion that gives vibration to the device main body in specific directions including the moving direction and the vertical direction, respectively.
  • the apparatus can be simplified and the particles constituting the powder can be prevented from being crushed by the mechanical moving force. Can be done. In addition, it is possible to prevent a part of the blade member from being mixed with the powder (contamination).
  • At least one gas supply unit of the first gas supply unit and the second gas supply unit is a gas tank accommodating the first raw material gas or the second raw material gas, and the powder storage.
  • the gas ejection part is arranged on the downstream side of the first powder storage part or the downstream side of the second powder storage part.
  • the powder when the gas ejection part ejects the raw material gas, the powder can be fluidized by the ejection output and the powder can be promoted to flow into the gas accommodating portion.
  • a powder forming method for forming a film on a powder which has a plurality of tops and a plurality of bottoms and meanders vertically in a moving direction intersecting the vertical direction.
  • a powder storage process in which the plurality of tops are partitioned by the stored powder, and the movement of the first raw material gas in one of the plurality of tops while accommodating the first raw material gas from the top.
  • a gas accommodating step of accommodating a second raw material gas different from the first raw material gas at another top on the downstream side in the direction, and the powder flow path in the main body of the apparatus are continuous with the powder in the moving direction.
  • the powder is reacted by the reaction between the gas molecules of the first raw material gas and the gas molecules of the second raw material gas. It is provided with a film forming step of performing a film forming process on the surface of the particles.
  • the film forming step may include moving the powder in the moving direction by applying vibrations in specific directions including the moving direction and the vertical direction to the apparatus main body. desirable.
  • a film forming method is provided.

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Abstract

Provided are a powder film forming device and a powder film forming method with which it is possible to continuously carry out, on powder, film forming processing, while suppressing the mixing of or contact between raw material gases at any location other than the surfaces of particles that constitute the powder. A device body (10) of a powder film forming device (1) includes at least one film forming processing unit (100C) that is arranged in a powder flow channel (100) through which powder (F) moves. The film forming processing unit (100C) includes: a first gas containing part (101) that contains a first raw material gas; a second gas containing part (103) that contains a second raw material gas; and a plurality of powder reservoirs (105). The powder (F) stored in the powder reservoirs (105) seals a space between the first gas containing part (101) and the second gas containing part (103) and prevents mixing or contacting between the raw material gases.

Description

粉体成膜装置および粉体成膜方法Powder deposition equipment and powder deposition method
 本発明は、粉体に成膜処理を施す粉体成膜装置および粉体成膜方法に関する。 The present invention relates to a powder film forming apparatus and a powder film forming method for forming a film forming process on powder.
 従来、粉体に成膜処理を施す技術として、原子層堆積(Atomic Layer Deposition)処理技術が知られている。当該技術では、粉体を2種類の原料ガスに交互に曝露することによって、各原料ガスの相互反応によって粉体上に膜を形成することができる。 Conventionally, an atomic layer deposition treatment technique is known as a technique for forming a film on a powder. In this technique, by alternately exposing the powder to two kinds of raw material gases, a film can be formed on the powder by the mutual reaction of the respective raw material gases.
 特許文献1には、ベルトコンベア上に積層された粉体が、前記ベルトコンベアによって複数のガス収容部を通過するように搬送され、粉体上に順に膜が形成される技術が開示されている。また、特許文献2には、反応容器内に第1原料ガスを充填した状態で、当該反応容器内で粉体を落下させることで粉体上に第1原料ガスのイオンを付着させ、反応容器から前記第1原料ガスを完全に排出したのち、反応容器内に第2原料ガスを充填した状態で、前記粉体を再び落下させることで、粉体上に膜を形成する技術が開示されている。 Patent Document 1 discloses a technique in which powder laminated on a belt conveyor is conveyed by the belt conveyor so as to pass through a plurality of gas accommodating portions, and a film is sequentially formed on the powder. .. Further, in Patent Document 2, in a state where the reaction vessel is filled with the first raw material gas, the powder is dropped in the reaction vessel to attach the ions of the first raw material gas onto the powder, and the reaction vessel is described. Disclosed is a technique for forming a film on the powder by completely discharging the first raw material gas from the above, and then dropping the powder again in a state where the reaction vessel is filled with the second raw material gas. There is.
米国特許出願公開第2018/0363136号明細書U.S. Patent Application Publication No. 2018/0363136 米国特許出願公開第2012/0015106号明細書U.S. Patent Application Publication No. 2012/0015106
 特許文献1に開示された技術では、ベルトコンベアによって粉体を搬送するため、隣接するガス収容部同士を仕切るための隔壁とベルトコンベア上の粉体との間には所定の隙間が形成されている。このため、当該隙間において互いに異なる原料ガス同士が混触し反応すると、粉体上に本来の設定値よりも厚い膜が不規則に形成されるという問題や、上記反応によって生成された反応物が粉体内に混入するという問題があった。また、特許文献2に開示された技術では、反応容器に原料ガスを充填したのち当該原料ガスを完全に排出する工程を1原子層を成膜する毎に繰り返す必要があるため、粉体に対する成膜処理時間が長くなるという問題があった。 In the technique disclosed in Patent Document 1, since the powder is conveyed by the belt conveyor, a predetermined gap is formed between the partition wall for partitioning the adjacent gas accommodating portions and the powder on the belt conveyor. There is. Therefore, when different raw material gases come into contact with each other in the gap and react with each other, there is a problem that a film thicker than the original set value is irregularly formed on the powder, and the reaction product produced by the above reaction is powdered. There was a problem that it was mixed in the body. Further, in the technique disclosed in Patent Document 2, it is necessary to repeat the process of filling the reaction vessel with the raw material gas and then completely discharging the raw material gas every time a single atomic layer is formed. There is a problem that the film treatment time becomes long.
 本発明の目的は、粉体を構成する粒子の表面以外での原料ガス同士の混触を抑制しつつ、粉体に連続的に成膜処理を施すことが可能な粉体成膜装置および粉体成膜方法を提供することにある。 An object of the present invention is a powder film forming apparatus and a powder capable of continuously performing a film forming process on a powder while suppressing contact between raw material gases other than the surface of the particles constituting the powder. The purpose is to provide a film forming method.
 本発明によって提供されるのは、粉体に成膜処理を施す粉体成膜装置であって、装置本体と、第1原料ガスを供給することが可能な第1ガス供給部と、前記第1原料ガスとは異なる第2原料ガスを供給することが可能な第2ガス供給部と、前記装置本体に設けられ、前記第1原料ガスのガス分子と前記第2原料ガスのガス分子との反応によって粉体の粒子の表面に膜を形成することが可能な少なくとも一つの成膜処理部であって、複数の頂部と複数の底部とを有し上下に蛇行しながら上下方向と交差する移動方向に粉体が流れることを許容する粉体流路が形成されている少なくとも一つの成膜処理部と、前記少なくとも一つの成膜処理部において前記粉体流路に沿って粉体を連続的に移動させることが可能な粉体移動機構と、を備える。前記少なくとも一つの成膜処理部は、前記粉体流路の前記底部をそれぞれ構成し、粉体を貯留する複数の粉体貯留部と、前記粉体流路の前記頂部をそれぞれ構成し、前記複数の粉体貯留部のうち隣接する粉体貯留部同士を互いに接続するとともに内部にガスを収容する複数のガス収容部であって、前記第1ガス供給部から前記第1原料ガスを受け入れ当該第1原料ガスを収容する第1ガス収容部と前記第2ガス供給部から前記第2原料ガスを受け入れ当該第2原料ガスを収容する第2ガス収容部とを少なくとも含む複数のガス収容部と、を有し、前記粉体移動機構は、粉体が前記粉体貯留部から前記ガス収容部に流入することで前記ガス収容部内のガスに曝露され粉体が前記ガス収容部から次の粉体貯留部に流入するように、前記粉体流路において粉体を移動させ、前記複数の粉体貯留部は、隣接するガス収容部同士の間で前記粉体流路に沿ってガスが流れることを前記貯留する粉体によって抑止することが可能なように粉体を貯留する形状を有している。 Provided by the present invention is a powder film forming apparatus for performing a film forming process on powder, the apparatus main body, a first gas supply unit capable of supplying a first raw material gas, and the first gas supply unit. A second gas supply unit capable of supplying a second source gas different from the first source gas, and gas molecules of the first source gas and gas molecules of the second source gas provided in the main body of the apparatus. It is at least one film forming processing portion capable of forming a film on the surface of powder particles by a reaction, and has a plurality of tops and a plurality of bottoms, and moves to intersect the vertical direction while meandering up and down. At least one film forming process section in which a powder flow path that allows powder to flow in the direction is formed, and the at least one film forming process section continuously distributes powder along the powder flow path. It is equipped with a powder moving mechanism that can be moved to. The at least one film forming processing unit constitutes the bottom portion of the powder flow path, and constitutes a plurality of powder storage portions for storing powder and the top portion of the powder flow path, respectively. A plurality of gas storage units that connect adjacent powder storage units to each other and store gas inside, and receive the first raw material gas from the first gas supply unit. A plurality of gas accommodating units including at least a first gas accommodating unit for accommodating the first raw material gas and a second gas accommodating unit for receiving the second raw material gas from the second gas supply unit and accommodating the second raw material gas. The powder transfer mechanism has the above, and the powder is exposed to the gas in the gas accommodating portion by flowing into the gas accommodating portion from the powder accommodating portion, and the powder is exposed from the gas accommodating portion to the next powder. The powder is moved in the powder flow path so as to flow into the body storage section, and the plurality of powder storage sections allow gas to flow along the powder flow path between adjacent gas storage sections. It has a shape for storing powder so that this can be suppressed by the stored powder.
 また、本発明によって提供されるのは、粉体に成膜処理を施す粉体成膜方法であって、複数の頂部と複数の底部とを有し上下に蛇行しながら上下方向と交差する移動方向に粉体が流れることを許容する粉体流路が形成されている装置本体を準備する準備工程と、前記粉体流路のうち前記複数の頂部よりも下方の領域に粉体を貯留し当該貯留された粉体によって前記複数の頂部同士の間を仕切る粉体貯留工程と、前記複数の頂部のうちの一の頂部に第1原料ガスを収容する一方、前記一の頂部よりも前記移動方向下流側の他の頂部に前記第1原料ガスとは異なる第2原料ガスを収容するガス収容工程と、前記装置本体において前記粉体流路に沿って前記粉体を前記移動方向に連続的に移動させることで前記粉体を前記第1原料ガスおよび前記第2原料ガスに順に曝露させ前記第1原料ガスのガス分子と前記第2原料ガスのガス分子との反応によって前記粉体の粒子の表面に成膜処理を施す成膜工程と、を備える。 Further, what is provided by the present invention is a powder forming method for forming a film on a powder, which has a plurality of tops and a plurality of bottoms and moves to intersect the vertical direction while meandering up and down. A preparatory step for preparing an apparatus main body in which a powder flow path that allows powder to flow in a direction is formed, and a powder is stored in a region of the powder flow path below the plurality of tops. A powder storage step of partitioning between the plurality of tops by the stored powder, and the movement of the first raw material gas from one of the tops while accommodating the first raw material gas in one of the tops. A gas accommodating step of accommodating a second raw material gas different from the first raw material gas at another top on the downstream side in the direction, and the powder flow path in the main body of the apparatus are continuous with the powder in the moving direction. The powder is exposed to the first raw material gas and the second raw material gas in order by moving to, and the particles of the powder are reacted by the reaction between the gas molecules of the first raw material gas and the gas molecules of the second raw material gas. It is provided with a film forming step of performing a film forming process on the surface of the above.
図1は、本発明の第1実施形態に係る粉体成膜装置の模式的な正断面図である。FIG. 1 is a schematic normal cross-sectional view of the powder film forming apparatus according to the first embodiment of the present invention. 図2は、本発明の第2実施形態に係る粉体成膜装置の模式的な正断面図である。FIG. 2 is a schematic normal cross-sectional view of the powder film forming apparatus according to the second embodiment of the present invention. 図3は、本発明の第3実施形態に係る粉体成膜装置の模式的な正断面図である。FIG. 3 is a schematic normal cross-sectional view of the powder film forming apparatus according to the third embodiment of the present invention. 図4は、本発明の第4実施形態に係る粉体成膜装置の模式的な斜視図である。FIG. 4 is a schematic perspective view of the powder film forming apparatus according to the fourth embodiment of the present invention. 図5は、本発明の第5実施形態に係る粉体成膜装置の模式的な水平断面図である。FIG. 5 is a schematic horizontal sectional view of the powder film forming apparatus according to the fifth embodiment of the present invention. 図6は、本発明の第5実施形態に係る粉体成膜装置の模式的な透視斜視図である。FIG. 6 is a schematic perspective perspective view of the powder film forming apparatus according to the fifth embodiment of the present invention. 図7は、本発明の変形実施形態に係る粉体成膜装置の模式的な正断面図である。FIG. 7 is a schematic normal cross-sectional view of the powder film forming apparatus according to the modified embodiment of the present invention.
 以下、図面を参照して、本発明の一実施形態(第1実施形態)に係る粉体成膜装置1について説明する。本実施形態に係る粉体成膜装置1は、粉体に対して原子層堆積(Atomic Layer Deposition)による成膜処理を施す。図1は、本実施形態に係る粉体成膜装置1の模式的な正断面図である。粉体成膜装置1は、装置本体10と、原料ガス排気部120と、第1ガス供給部121と、パージガス供給部122と、第2ガス供給部123と、パージガス排気部124と、粉体移動機構125と、を有する。以下では、粉体成膜装置1によって粉体(たとえば金属粉、鉄粉)上にアルミナ(Al)の成膜を行う場合を例に説明する。 Hereinafter, the powder film forming apparatus 1 according to the embodiment (first embodiment) of the present invention will be described with reference to the drawings. The powder film forming apparatus 1 according to the present embodiment performs a film forming process on the powder by atomic layer deposition (Atomic Layer Deposition). FIG. 1 is a schematic normal cross-sectional view of the powder film forming apparatus 1 according to the present embodiment. The powder film forming apparatus 1 includes an apparatus main body 10, a raw material gas exhaust unit 120, a first gas supply unit 121, a purge gas supply unit 122, a second gas supply unit 123, a purge gas exhaust unit 124, and powder. It has a moving mechanism 125 and. In the following, a case where alumina (Al 2 O 3 ) is formed on powder (for example, metal powder or iron powder) by the powder film forming apparatus 1 will be described as an example.
 装置本体10は、粉体成膜装置1の本体部分に相当し、本実施形態では直方体形状の筐体構造を有している。装置本体10の内部には、後記で詳述するように粉体が流れることを許容する粉体流路100が複数のガス収容部を通過するように形成されている。 The apparatus main body 10 corresponds to the main body portion of the powder film forming apparatus 1, and has a rectangular parallelepiped housing structure in the present embodiment. As will be described in detail later, a powder flow path 100 that allows powder to flow is formed inside the apparatus main body 10 so as to pass through a plurality of gas accommodating portions.
 原料ガス排気部120は、真空ポンプからなり、装置本体10内の各ガス収容部を真空状態とする(真空引き)。原料ガス排気部120は、第1ガス排気部120Aと、第2ガス排気部120Bとを有する。第1ガス排気部120Aは、第1ガス収容部101を真空状態とし、当該第1ガス収容部101から第1原料ガスを排気する。同様に、第2ガス排気部120Bは、第2ガス収容部103を真空状態とし、当該第2ガス収容部103から第2原料ガスを排気する。第1ガス排気部120Aおよび第2ガス排気部120Bが互いに独立して配置されることで、各排気経路において第1原料ガスと第2原料ガスとが混触することが防止される。 The raw material gas exhaust unit 120 is composed of a vacuum pump, and each gas accommodating unit in the apparatus main body 10 is evacuated (vacuum drawing). The raw material gas exhaust unit 120 includes a first gas exhaust unit 120A and a second gas exhaust unit 120B. The first gas exhaust unit 120A puts the first gas accommodating unit 101 in a vacuum state and exhausts the first raw material gas from the first gas accommodating unit 101. Similarly, the second gas exhaust unit 120B puts the second gas accommodating unit 103 in a vacuum state and exhausts the second raw material gas from the second gas accommodating unit 103. By arranging the first gas exhaust unit 120A and the second gas exhaust unit 120B independently of each other, it is possible to prevent the first source gas and the second source gas from coming into contact with each other in each exhaust path.
 第1ガス供給部121は、装置本体10内の第1ガス収容部101に第1原料ガスを供給することが可能とされている。本実施形態では、第1原料ガスとして、TMA(トリメチルアルミニウム:Trimethylaluminum)が用いられている。 The first gas supply unit 121 is capable of supplying the first raw material gas to the first gas storage unit 101 in the apparatus main body 10. In this embodiment, TMA (Trimethylaluminum) is used as the first raw material gas.
 第2ガス供給部123は、装置本体10内の第2ガス収容部103に第1原料ガスとは異なる第2原料ガスを供給することが可能とされている。本実施形態では、第2原料ガスとして、水蒸気(H0)または酸素プラズマが用いられている。 The second gas supply unit 123 is capable of supplying a second raw material gas different from the first raw material gas to the second gas accommodating unit 103 in the apparatus main body 10. In this embodiment, water vapor (H 20 ) or oxygen plasma is used as the second raw material gas.
 パージガス供給部122は、装置本体10内のパージガス収容部102にパージガスを供給することが可能とされている。パージガスは、前記第1原料ガスおよび前記第2原料ガスとは異なるガスであって粉体内から余剰の前記第1原料ガスおよび前記第2ガスを除去するためのものである。本実施形態では、パージガスとして、窒素ガスが用いられている。 The purge gas supply unit 122 is capable of supplying purge gas to the purge gas accommodating unit 102 in the apparatus main body 10. The purge gas is a gas different from the first raw material gas and the second raw material gas, and is for removing excess of the first raw material gas and the second raw material gas from the powder. In this embodiment, nitrogen gas is used as the purge gas.
 パージガス排気部124は、原料ガス排気部120に対して独立して設けられた真空ポンプからなり、パージガス収容部102から前記パージガスを排気する。 The purge gas exhaust unit 124 includes a vacuum pump provided independently of the raw material gas exhaust unit 120, and exhausts the purge gas from the purge gas accommodating unit 102.
 粉体移動機構125は、装置本体10内の後記の成膜処理部100Cにおいて粉体流路100に沿って粉体Fを連続的に移動させることが可能とされている。本実施形態では、粉体移動機構125は、装置本体10に対して、粉体Fの移動方向(右方向)および上下方向をそれぞれ含む特定方向(図1の矢印D1)の振動を与える振動発生部を含む。 The powder transfer mechanism 125 is capable of continuously moving the powder F along the powder flow path 100 in the film forming processing unit 100C described later in the apparatus main body 10. In the present embodiment, the powder moving mechanism 125 generates vibration that gives vibration to the apparatus main body 10 in a specific direction (arrow D1 in FIG. 1) including a moving direction (right direction) and a vertical direction of the powder F, respectively. Including part.
 装置本体10は、供給側貯留室100Aと、排出側貯留室100Bと、供給側貯留室100Aと排出側貯留室100Bとの間に配置される複数の成膜処理部100Cとを有する。供給側貯留室100Aは、装置本体10の左端部に配置されており、その上面部には粉体Fを受け入れる粉体供給口10Pが開口されている。同様に、排出側貯留室100Bは、装置本体10の右端部に配置されており、その下面部には粉体Fを排出する粉体排出口10Qが開口されている。なお、粉体供給口10Pおよび粉体排出口10Qにはそれぞれ開閉可能な不図示のカバーが装着されている。 The apparatus main body 10 has a supply-side storage chamber 100A, a discharge-side storage chamber 100B, and a plurality of film-forming processing units 100C arranged between the supply-side storage chamber 100A and the discharge-side storage chamber 100B. The supply-side storage chamber 100A is arranged at the left end of the apparatus main body 10, and a powder supply port 10P for receiving the powder F is opened on the upper surface thereof. Similarly, the discharge side storage chamber 100B is arranged at the right end portion of the apparatus main body 10, and a powder discharge port 10Q for discharging the powder F is opened on the lower surface portion thereof. A cover (not shown) that can be opened and closed is attached to each of the powder supply port 10P and the powder discharge port 10Q.
 複数の成膜処理部100Cは、前記第1原料ガスのガス分子と前記第2原料ガスのガス分子との反応によって粉体Fを構成する粒子の表面にそれぞれ膜を形成する。なお、図1では、複数の成膜処理部100Cのうちの一の成膜処理部100Cについて詳細に示している。装置本体10内では、図1の成膜処理部100Cの上流側(左側)および下流側(右側)にも、それぞれ他の成膜処理部100Cが連続的に配置されている。このような複数の成膜処理部100Cは、前述の粉体流路100を構成している。粉体流路100は、図1の矢印D2、D3に示すように、複数の頂部と複数の底部とを有し上下に蛇行しながら水平な移動方向(右方向)に向かって粉体Fが流れることを許容する。 The plurality of film forming processing units 100C each form a film on the surface of the particles constituting the powder F by the reaction between the gas molecules of the first raw material gas and the gas molecules of the second raw material gas. Note that FIG. 1 shows in detail one of the plurality of film forming processing units 100C, the film forming processing unit 100C. In the apparatus main body 10, other film forming processing units 100C are continuously arranged on the upstream side (left side) and the downstream side (right side) of the film forming processing unit 100C of FIG. 1, respectively. Such a plurality of film forming processing units 100C form the above-mentioned powder flow path 100. As shown by arrows D2 and D3 in FIG. 1, the powder flow path 100 has a plurality of tops and a plurality of bottoms, and the powder F moves in a horizontal moving direction (right direction) while meandering up and down. Allow to flow.
 成膜処理部100Cは、それぞれが粉体流路100の頂部を構成する、第1ガス収容部101、当該第1ガス収容部101の下流側に配置される一のパージガス収容部102、第2ガス収容部103、当該第2ガス収容部103の下流側に配置される他のパージガス収容部102(以上、複数のガス収容部)と、これらのガス収容部の下方に互いに隣接して配置され、それぞれが粉体流路100の底部を構成する4つの粉体貯留部105(複数の粉体貯留部)と、を有する。 The film forming processing unit 100C includes a first gas accommodating unit 101, each of which constitutes the top of the powder flow path 100, and one purge gas accommodating unit 102 and a second purge gas accommodating unit 102 arranged on the downstream side of the first gas accommodating unit 101. The gas accommodating portion 103, another purge gas accommodating portion 102 (above, a plurality of gas accommodating portions) arranged on the downstream side of the second gas accommodating portion 103, and the other gas accommodating portions 102 are arranged adjacent to each other below these gas accommodating portions. , Each having four powder storage units 105 (plurality of powder storage units) constituting the bottom of the powder flow path 100.
 第1ガス収容部101は、粉体流路100の一部を構成する。第1ガス収容部101は、第1ガス供給部121から前記第1原料ガスを受け入れ、当該第1原料ガスを収容する。 The first gas accommodating portion 101 constitutes a part of the powder flow path 100. The first gas accommodating unit 101 receives the first raw material gas from the first gas supply unit 121 and accommodates the first raw material gas.
 第2ガス収容部103は、粉体流路100の一部を構成する。第2ガス収容部103は、第1ガス収容部101よりも前記移動方向の下流側に配置され、第2ガス供給部123から前記第2原料ガスを受け入れ、当該第2原料ガスを収容する。 The second gas accommodating portion 103 constitutes a part of the powder flow path 100. The second gas accommodating unit 103 is arranged downstream of the first gas accommodating unit 101 in the moving direction, receives the second raw material gas from the second gas supply unit 123, and accommodates the second raw material gas.
 各パージガス収容部102は、粉体流路100における粉体の流れにおいて第1ガス収容部101と第2ガス収容部103との間に配置され、パージガス供給部122から前記パージガスを受け入れ当該パージガスを収容する。 Each purge gas accommodating unit 102 is arranged between the first gas accommodating unit 101 and the second gas accommodating unit 103 in the powder flow in the powder flow path 100, receives the purge gas from the purge gas supply unit 122, and receives the purge gas. Contain.
 複数の粉体貯留部105は、第1ガス収容部101、パージガス収容部102および第2ガス収容部103の下方で、互いに異なるガス収容部に跨るようにそれぞれ配置されている。換言すれば、前記複数のガス収容部の各々は、前記複数の粉体貯留部105のうち隣接する粉体貯留部105同士を互いに接続する。図1に示すように、各粉体貯留部105は、後記の第2仕切部112の上端部近傍まで粉体Fを貯留している。また、複数の粉体貯留部105は、隣接するガス収容部同士の間で粉体流路100に沿ってガスが流れることを、貯留する粉体によって抑止することが可能なように粉体を貯留する形状を有している。 The plurality of powder storage units 105 are arranged below the first gas storage unit 101, the purge gas storage unit 102, and the second gas storage unit 103 so as to straddle different gas storage units. In other words, each of the plurality of gas accommodating portions connects the adjacent powder storage portions 105 of the plurality of powder storage portions 105 to each other. As shown in FIG. 1, each powder storage unit 105 stores powder F up to the vicinity of the upper end portion of the second partition portion 112 described later. Further, the plurality of powder storage units 105 store the powder so that the flowing of gas along the powder flow path 100 between the adjacent gas storage units can be suppressed by the stored powder. It has a shape to store.
 ここで、装置本体10内に上記の各ガス収容部および粉体貯留部が形成される構造について更に詳述する。図1に示すように、装置本体10は、底壁10Bと、底壁10Bの上方に配置される天壁10Tと、複数の第1仕切部111(少なくとも3つの第1仕切部)と、複数の第2仕切部112(複数の第2仕切部)と、を有する。 Here, the structure in which each of the above gas accommodating portions and powder accommodating portions is formed in the apparatus main body 10 will be described in more detail. As shown in FIG. 1, the apparatus main body 10 includes a bottom wall 10B, a top wall 10T arranged above the bottom wall 10B, a plurality of first partition portions 111 (at least three first partition portions), and a plurality of first partition portions 111. It has a second partition portion 112 (a plurality of second partition portions) of the above.
 複数の第1仕切部111は、前記装置本体10の前記天壁10Tに前記移動方向に互いに間隔をおいて配置され、かつ、前記天壁10Tから下方にそれぞれ延び前記粉体流路100を画定している。各第1仕切部111は、底壁10Bに対して所定の間隔をおいて配置される先端部(下端部、第1仕切先端部)をそれぞれ有する。 The plurality of first partition portions 111 are arranged on the top wall 10T of the apparatus main body 10 at intervals in the moving direction, and extend downward from the top wall 10T to define the powder flow path 100. doing. Each first partition 111 has a tip (lower end, first partition tip) arranged at predetermined intervals with respect to the bottom wall 10B.
 複数の第2仕切部112は、複数の第1仕切部111のうち前記移動方向において互いに隣接する第1仕切部111同士の間にそれぞれ配置されるように、前記装置本体10の底壁10Bに前記移動方向に互いに間隔をおいて配置され、かつ、底壁10Bから上方にそれぞれ延び粉体流路100を画定している。各第2仕切部112は、天壁10Tに対して所定の間隔をおいて配置される先端部(上端部、第2仕切先端部)をそれぞれ有する。 The plurality of second partition portions 112 are arranged on the bottom wall 10B of the apparatus main body 10 so as to be arranged between the first partition portions 111 adjacent to each other in the moving direction among the plurality of first partition portions 111. They are arranged at intervals in the moving direction and extend upward from the bottom wall 10B to define the powder flow path 100. Each second partition 112 has a tip (upper end, second partition tip) arranged at a predetermined interval with respect to the top wall 10T.
 図1に示すように、複数の第1仕切部111のうち前記移動方向において互いに隣接する複数対の第1仕切部111が、第1仕切部111同士の間の空間のうち少なくとも第2仕切部112の先端部よりも上方の部分において、第1ガス収容部101、パージガス収容部102および第2ガス収容部103をそれぞれ画定している。 As shown in FIG. 1, among the plurality of first partition portions 111, a plurality of pairs of first partition portions 111 adjacent to each other in the moving direction are at least the second partition portion in the space between the first partition portions 111. A first gas accommodating portion 101, a purge gas accommodating portion 102, and a second gas accommodating portion 103 are defined in a portion above the tip end portion of the 112.
 また、複数の第2仕切部112のうちの前記移動方向において互いに隣接する複数対(少なくとも一対)の第2仕切部112が、第2仕切部112同士の間の第1仕切部111(第1仕切先端部)を左右両側から挟むように粉体貯留部105をそれぞれ画定している。 Further, among the plurality of second partition portions 112, a plurality of pairs (at least a pair) of the second partition portions 112 adjacent to each other in the moving direction are the first partition portions 111 (first) between the second partition portions 112. The powder storage portions 105 are defined so as to sandwich the partition tip portion) from both the left and right sides.
 図1に示すように、粉体移動機構125によって装置本体10に対して矢印D1で示す方向の振動が加えられながら、粉体供給口10Pから粉体Fが供給側貯留室100Aに投入されると、前記振動を受けて粉体Fが移動方向下流側に移動する。成膜処理部100Cの最も上流側に位置する粉体貯留部105に貯留された粉体Fは、矢印D2で示すように、第1仕切部111の下方を潜りながら、矢印D3で示すように、第2仕切部112を乗り越える。このような動きを繰り返しながら、やがて図1に示すように、各粉体貯留部105に粉体Fが貯留される。次に、第1ガス供給部121、パージガス供給部122および第2ガス供給部123が、それぞれ第1ガス収容部101、パージガス収容部102および第2ガス収容部103に、対応するガスを供給する。この際、各粉体貯留部105に貯留される粉体Fが各ガス収容部の下面部を画定し、シールする。なお、第1ガス供給部121、パージガス供給部122および第2ガス供給部123は、粉体Fによってシールされたガス収容部から順にガスを供給してもよい。このように、成膜処理部100Cにおいて粉体Fが第1ガス収容部101、パージガス収容部102、第2ガス収容部103および他のパージガス収容部102をそれぞれ順に通過する。そして、粉体Fが第1ガス収容部101に流入すると、粉体Fの粒子の表面には前駆体として機能するトリメチルアルミニウムが付着する。この際、粉体F(下地)の粒子の表面の酸素基にアルミニウム基が一つ結合し核が形成されるとともに、トリメチルアルミニウム中のメチル基は、粉体Fから脱離する。そして、この核を起点として膜が横方向(表面に沿った方向)に成長し、粉体Fの粒子の上にアルミニウム層(レイヤー)が形成される。粉体Fの粒子の表面の酸素基が埋まると、それ以上アルミニウム基が粉体Fの粒子に付着することができないため、粉体Fの周辺に存在するトリメチルアルミニウムは余剰分となる。このため、粉体移動機構125による移動に伴って粉体Fがパージガス収容部102に進入すると、粉体Fの周辺のトリメチルアルミニウムの余剰分は、パージガス収容部102中のパージガス(窒素)とともに、パージガス排気部124によって排気される。 As shown in FIG. 1, the powder F is charged into the supply side storage chamber 100A from the powder supply port 10P while the powder moving mechanism 125 applies vibration in the direction indicated by the arrow D1 to the apparatus main body 10. Then, the powder F moves to the downstream side in the moving direction in response to the vibration. The powder F stored in the powder storage unit 105 located on the most upstream side of the film forming processing unit 100C dives under the first partition portion 111 as shown by the arrow D2, as shown by the arrow D3. , Overcome the second partition 112. While repeating such movements, powder F is eventually stored in each powder storage unit 105 as shown in FIG. Next, the first gas supply unit 121, the purge gas supply unit 122, and the second gas supply unit 123 supply the corresponding gas to the first gas storage unit 101, the purge gas storage unit 102, and the second gas storage unit 103, respectively. .. At this time, the powder F stored in each powder storage unit 105 defines and seals the lower surface portion of each gas storage unit. The first gas supply unit 121, the purge gas supply unit 122, and the second gas supply unit 123 may supply gas in order from the gas storage unit sealed by the powder F. In this way, in the film forming processing unit 100C, the powder F passes through the first gas accommodating unit 101, the purge gas accommodating unit 102, the second gas accommodating unit 103, and the other purge gas accommodating unit 102 in this order. Then, when the powder F flows into the first gas accommodating portion 101, trimethylaluminum functioning as a precursor adheres to the surface of the particles of the powder F. At this time, one aluminum group is bonded to the oxygen group on the surface of the particles of the powder F (base) to form a nucleus, and the methyl group in the trimethylaluminum is desorbed from the powder F. Then, the film grows in the lateral direction (direction along the surface) starting from this nucleus, and an aluminum layer (layer) is formed on the particles of the powder F. When the oxygen groups on the surface of the particles of the powder F are buried, the aluminum groups cannot adhere to the particles of the powder F any more, so that the trimethylaluminum existing around the powder F becomes a surplus. Therefore, when the powder F enters the purge gas accommodating portion 102 due to the movement by the powder moving mechanism 125, the surplus of trimethylaluminum around the powder F is present together with the purge gas (nitrogen) in the purge gas accommodating portion 102. It is exhausted by the purge gas exhaust unit 124.
 次に、粉体Fが第2ガス収容部103に流入すると、粉体Fの粒子の表面のアルミニウム基に水蒸気中の酸素基が付着し、粉体Fを包むように酸素基の層が形成される。同様に、次のパージガス収容部102において、余剰分の水蒸気(酸素基)が排気されたのち、更に下流の成膜処理部100Cの第1ガス収容部101において、前記酸素基にトリメチルアルミニウムが付着する。このような工程が繰り返されることで、粉体排出口10Qから排出される粉体Fの粒子の表面には複数のアルミニウム原子層を含むアルミナの膜(Al)が形成されている。このように、本実施形態では、粉体Fに対して連続的に膜を形成することができる。また、図1に示すように、第1ガス収容部101と第2ガス収容部103との間には、パージガス収容部102が配置されるとともに、2つの粉体貯留部105に貯留される粉体Fが第1ガス収容部101と第2ガス収容部103とを互いに隔離している(シールしている)。このため、粉体Fを構成する粒子表面とは異なる部分(たとえば第1ガス収容部101、第2ガス収容部103の内壁)において、第1原料ガス(トリメチルアルミニウム)と第2原料ガス(水蒸気)とが互いに反応し、アルミナが生成、付着することが防止される。なお、上記のような粉体Fに対する成膜処理が施されるにあたって、初期的に各ガス収容部の封止のみに使用され、十分な成膜処理を受けなかった粉体Fは、再び粉体供給口10Pから供給側貯留室100Aに投入されリユースされてもよい。 Next, when the powder F flows into the second gas accommodating portion 103, the oxygen groups in the water vapor adhere to the aluminum groups on the surface of the particles of the powder F, and a layer of oxygen groups is formed so as to enclose the powder F. NS. Similarly, after the excess water vapor (oxygen group) is exhausted in the next purge gas accommodating portion 102, trimethylaluminum adheres to the oxygen group in the first gas accommodating portion 101 of the film forming processing unit 100C further downstream. do. By repeating such a step, an alumina film (Al 2 O 3 ) containing a plurality of aluminum atomic layers is formed on the surface of the powder F particles discharged from the powder discharge port 10Q. As described above, in the present embodiment, the film can be continuously formed on the powder F. Further, as shown in FIG. 1, a purge gas accommodating unit 102 is arranged between the first gas accommodating unit 101 and the second gas accommodating unit 103, and powder stored in the two powder storage units 105. The body F separates (seals) the first gas accommodating portion 101 and the second gas accommodating portion 103 from each other. Therefore, in a portion different from the particle surface constituting the powder F (for example, the inner wall of the first gas accommodating portion 101 and the second gas accommodating portion 103), the first raw material gas (trimethylaluminum) and the second raw material gas (water vapor). ) And react with each other to prevent the formation and adhesion of alumina. In addition, when the film forming treatment for the powder F as described above is performed, the powder F which is initially used only for sealing each gas accommodating portion and has not undergone sufficient film forming treatment is again powdered. It may be put into the supply side storage chamber 100A from the body supply port 10P and reused.
 ここで、図1に示される本実施形態に係る成膜処理部100Cの構造は、第1ガス収容部101および第2ガス収容部103を基準として以下のように捉えることができる。成膜処理部100Cは、第1ガス収容部101と、第1パージガス収容部102Aと、第2ガス収容部103と、第2パージガス収容部102Bと、第1粉体貯留部100Jと、第2粉体貯留部100Kと、2つの中間粉体貯留部100M、100Nとを有する。 Here, the structure of the film forming processing unit 100C according to the present embodiment shown in FIG. 1 can be grasped as follows with reference to the first gas accommodating unit 101 and the second gas accommodating unit 103. The film forming processing unit 100C includes a first gas accommodating unit 101, a first purge gas accommodating unit 102A, a second gas accommodating unit 103, a second purge gas accommodating unit 102B, a first powder storage unit 100J, and a second. It has a powder storage unit 100K and two intermediate powder storage units 100M and 100N.
 第1ガス収容部101と第2ガス収容部103との間には、第1パージガス収容部102Aが配置されている。同様に、第2ガス収容部103の下流側(第2ガス収容部103と次の第1ガス収容部101との間)は、第2パージガス収容部102Bが配置されている。当該第1パージガス収容部102Aおよび第2パージガス収容部102Bは、前記粉体流路100の一部を構成する。また、第1パージガス収容部102Aおよび第2パージガス収容部102Bは、パージガス供給部122からパージガスを受け入れ当該パージガスを収容する。 A first purge gas accommodating unit 102A is arranged between the first gas accommodating unit 101 and the second gas accommodating unit 103. Similarly, a second purge gas accommodating portion 102B is arranged on the downstream side of the second gas accommodating portion 103 (between the second gas accommodating portion 103 and the next first gas accommodating portion 101). The first purge gas accommodating portion 102A and the second purge gas accommodating portion 102B form a part of the powder flow path 100. Further, the first purge gas accommodating unit 102A and the second purge gas accommodating unit 102B receive the purge gas from the purge gas supply unit 122 and accommodate the purge gas.
 第1粉体貯留部100Jは、図1において、第1ガス収容部101の直上流の粉体貯留部105に相当する。当該第1粉体貯留部100Jは、粉体流路100の一部を構成する。第1粉体貯留部100Jは、第1ガス収容部101の前記移動方向の上流側部分に下方から連通し、第1ガス収容部101に供給される粉体Fを貯留することが可能とされている。第1粉体貯留部100Jは、第1ガス収容部101から当該第1ガス収容部101よりも上流側のパージガス収容部102に第1原料ガスが流れることを抑止するように粉体Fを貯留する。なお、図1に示される成膜処理部100Cが最も上流側に位置する成膜処理部100Cの場合には、第1粉体貯留部100Jは、第1ガス収容部101から供給側貯留室100Aに第1原料ガスが流れることを抑止する。 The first powder storage unit 100J corresponds to the powder storage unit 105 immediately upstream of the first gas storage unit 101 in FIG. 1. The first powder storage unit 100J constitutes a part of the powder flow path 100. The first powder storage unit 100J communicates with the upstream portion of the first gas storage unit 101 in the moving direction from below, and can store the powder F supplied to the first gas storage unit 101. ing. The first powder storage unit 100J stores the powder F so as to prevent the first raw material gas from flowing from the first gas storage unit 101 to the purge gas storage unit 102 on the upstream side of the first gas storage unit 101. do. In the case of the film forming process section 100C in which the film forming process section 100C shown in FIG. 1 is located on the most upstream side, the first powder storage section 100J is from the first gas accommodating section 101 to the supply side storage chamber 100A. The flow of the first raw material gas is suppressed.
 また、第2粉体貯留部100Kは、図1において、第2ガス収容部103の直上流の粉体貯留部105に相当する。当該第2粉体貯留部100Kは、粉体流路100の一部を構成する。第2粉体貯留部100Kは、第2ガス収容部103の前記移動方向の上流側部分に下方から連通し、第2ガス収容部103に供給される粉体Fを貯留することが可能とされている。また、第2粉体貯留部100Kは、第1パージガス収容部102Aの前記移動方向の下流側部分に下方から連通し、第1パージガス収容部102Aを通過した粉体Fを受け入れることが可能とされている。 Further, the second powder storage unit 100K corresponds to the powder storage unit 105 immediately upstream of the second gas storage unit 103 in FIG. 1. The second powder storage unit 100K constitutes a part of the powder flow path 100. The second powder storage unit 100K communicates with the upstream portion of the second gas storage unit 103 in the moving direction from below, and can store the powder F supplied to the second gas storage unit 103. ing. Further, the second powder storage unit 100K communicates with the downstream portion of the first purge gas storage unit 102A in the moving direction from below, and can receive the powder F that has passed through the first purge gas storage unit 102A. ing.
 また、中間粉体貯留部100Mは、第1ガス収容部101の前記移動方向の下流側部分および第1パージガス収容部102Aの前記移動方向の上流側部分のそれぞれに下方から連通し、粉体Fを貯留することが可能とされている。中間粉体貯留部100Mは、当該貯留した粉体Fによって第1ガス収容部101と第1パージガス収容部102Aとの間で前記第1原料ガスおよび前記パージガスが流れることをそれぞれ抑止するように粉体Fを貯留する。 Further, the intermediate powder storage unit 100M communicates with each of the downstream portion of the first gas accommodating portion 101 in the moving direction and the upstream portion of the first purge gas accommodating portion 102A in the moving direction from below, and the powder F is communicated with each other. It is possible to store. The intermediate powder storage unit 100M is a powder so as to prevent the first raw material gas and the purge gas from flowing between the first gas storage unit 101 and the first purge gas storage unit 102A by the stored powder F, respectively. Store body F.
 更に、中間粉体貯留部100Nは、第2ガス収容部103の直下流の粉体貯留部105に相当する。中間粉体貯留部100Nは、粉体流路100の一部を構成する。中間粉体貯留部100Nは、第2ガス収容部103の前記移動方向の下流側部分に下方から連通し、第2ガス収容部103を通過した粉体Fを貯留する(受け入れる)ことが可能とされている。また、中間粉体貯留部100Nは、第2パージガス収容部102Bの前記移動方向の上流側部分に下方から連通し、第2パージガス収容部102Bに供給される粉体Fを貯留するとともに、貯留した粉体Fによって第2ガス収容部103と第2パージガス収容部102Bとの間での前記第2原料ガスおよび前記パージガスの流れをそれぞれ抑止するように粉体Fを貯留する。 Further, the intermediate powder storage unit 100N corresponds to the powder storage unit 105 immediately downstream of the second gas storage unit 103. The intermediate powder storage unit 100N constitutes a part of the powder flow path 100. The intermediate powder storage unit 100N communicates with the downstream portion of the second gas storage unit 103 in the moving direction from below, and can store (accept) the powder F that has passed through the second gas storage unit 103. Has been done. Further, the intermediate powder storage unit 100N communicates with the upstream portion of the second purge gas storage unit 102B in the moving direction from below, and stores and stores the powder F supplied to the second purge gas storage unit 102B. The powder F is stored so as to suppress the flow of the second raw material gas and the purge gas between the second gas accommodating portion 103 and the second purge gas accommodating portion 102B, respectively.
 なお、図1のパージガス供給部122は、パージガス収容部102に対するパージガスの供給量を制御することが可能な流量制御弁122C(図2参照、圧力調整機構)を有している。当該流量制御弁122Cは、前記第1パージガス収容部102Aの圧力および前記第2パージガス収容部102Bの圧力が、第1ガス収容部101の圧力および第2ガス収容部103の圧力よりも低くなるように、前記第1パージガス収容部102Aの圧力および前記第2パージガス収容部102Bの圧力をそれぞれ調整する。一方、パージガス排気部124は、第1パージガス収容部102Aおよび第2パージガス収容部102Bからパージガスをそれぞれ排気する。このため、各パージガス収容部102が第1ガス収容部101および第2ガス収容部103に対して負圧に設定されるため、粉体F内に残留する第1原料ガスおよび第2原料ガスの余剰分が各パージガス収容部102に引き寄せられやすい。このため、パージガス排気部124によってこれらの余剰ガスをパージガスとともに確実に排気することができる。 The purge gas supply unit 122 of FIG. 1 has a flow rate control valve 122C (see FIG. 2, pressure adjusting mechanism) capable of controlling the supply amount of the purge gas to the purge gas accommodating unit 102. In the flow control valve 122C, the pressure of the first purge gas accommodating portion 102A and the pressure of the second purge gas accommodating portion 102B are lower than the pressure of the first gas accommodating portion 101 and the pressure of the second gas accommodating portion 103. The pressure of the first purge gas accommodating portion 102A and the pressure of the second purge gas accommodating portion 102B are adjusted respectively. On the other hand, the purge gas exhaust unit 124 exhausts the purge gas from the first purge gas accommodating unit 102A and the second purge gas accommodating unit 102B, respectively. Therefore, since each purge gas accommodating portion 102 is set to a negative pressure with respect to the first gas accommodating portion 101 and the second gas accommodating portion 103, the first raw material gas and the second raw material gas remaining in the powder F are charged. The surplus is likely to be attracted to each purge gas accommodating portion 102. Therefore, the purge gas exhaust unit 124 can reliably exhaust these excess gases together with the purge gas.
 更に、本実施形態では、原料ガス排気部120およびパージガス排気部124が、第1ガス収容部101、パージガス収容部102および第2ガス収容部103から気体を排気する。このため、各ガス収容部を真空引きしながら、必要量の原料ガスを供給することができるため、各ガス収容部における原料ガスの純度を高めることができる。この結果、粉体Fに対して高純度の成膜処理を行うことができる。 Further, in the present embodiment, the raw material gas exhaust unit 120 and the purge gas exhaust unit 124 exhaust the gas from the first gas accommodating unit 101, the purge gas accommodating unit 102, and the second gas accommodating unit 103. Therefore, since the required amount of raw material gas can be supplied while evacuating each gas accommodating portion, the purity of the raw material gas in each gas accommodating portion can be increased. As a result, the powder F can be subjected to a high-purity film forming process.
 以上のように、本実施形態では、粉体移動機構125が粉体Fを成膜処理部100Cの粉体流路100を連続的に移動させることで、当該粉体Fが第1ガス収容部101および第2ガス収容部103において第1原料ガスおよび第2原料ガスに順に曝露されることによって、両ガスのガス分子の反応をうけて粉体Fの粒子の表面上に連続的に膜を形成することができる。また、成膜処理部100Cの第1ガス収容部101と第2ガス収容部103との間に配置される各粉体貯留部105は、貯留する粉体Fによって第1ガス収容部101と第2ガス収容部103との間をシールすることができる。このため、第1ガス収容部101と第2ガス収容部103との間で各原料ガスが行き来することが抑止される。この結果、いずれかのガス収容部において粉体Fの粒子の表面とは異なる部分、たとえばガス収容部の壁面などにおいて原料ガス同士が混触することを抑制し、両ガスが反応することを抑止することができる。 As described above, in the present embodiment, the powder moving mechanism 125 continuously moves the powder F through the powder flow path 100 of the film forming processing section 100C, so that the powder F is transferred to the first gas accommodating section. By being sequentially exposed to the first raw material gas and the second raw material gas in the 101 and the second gas accommodating portion 103, a film is continuously formed on the surface of the particles of the powder F by undergoing the reaction of the gas molecules of both gases. Can be formed. Further, each powder storage unit 105 arranged between the first gas storage unit 101 and the second gas storage unit 103 of the film forming processing unit 100C has the first gas storage unit 101 and the first gas storage unit 105 depending on the powder F to be stored. 2 The space between the gas accommodating portion 103 and the gas accommodating portion 103 can be sealed. Therefore, the movement of each raw material gas between the first gas accommodating portion 101 and the second gas accommodating portion 103 is suppressed. As a result, it is suppressed that the raw material gases come into contact with each other at a portion different from the surface of the powder F particles in any of the gas accommodating portions, for example, the wall surface of the gas accommodating portion, and the reaction between the two gases is suppressed. be able to.
 また、本実施形態では、複数のガス収容部において、第1ガス収容部101および第2ガス収容部103は前記移動方向に沿って交互に配置されており、前記複数のガス収容部は、前記粉体流路100における粉体Fの流れにおいて第1ガス収容部101と第2ガス収容部103との間にそれぞれ配置され、パージガス供給部122から前記パージガスを受け入れ当該パージガスを収容する複数のパージガス収容部102を更に有する。このような構成によれば、第1原料ガスおよび第2原料ガスが、粉体Fの粒子の表面以外において互いに混触することを抑止し、第2ガス収容部103を通過した粉体Fから第2原料ガスの余剰分を第2パージガス収容部102Bにおいて取り除くことができる。したがって、前記余剰分の第2原料ガスが次の処理工程で第1原料ガスと反応し、粉体Fから独立した反応生成物が生成されることを抑止することができる。 Further, in the present embodiment, in the plurality of gas accommodating units, the first gas accommodating unit 101 and the second gas accommodating unit 103 are alternately arranged along the moving direction, and the plurality of gas accommodating units are arranged as described above. A plurality of purge gases that are arranged between the first gas accommodating portion 101 and the second gas accommodating portion 103 in the flow of the powder F in the powder flow path 100, receive the purge gas from the purge gas supply unit 122, and accommodate the purge gas. It further has an accommodating portion 102. According to such a configuration, the first raw material gas and the second raw material gas are prevented from coming into contact with each other except on the surface of the particles of the powder F, and the powder F passing through the second gas accommodating portion 103 is the second to the powder F. 2 The surplus of the raw material gas can be removed in the second purge gas accommodating portion 102B. Therefore, it is possible to prevent the surplus second raw material gas from reacting with the first raw material gas in the next treatment step to generate a reaction product independent of the powder F.
 また、本実施形態では、装置本体10内に配設された複数の第1仕切部111および複数の第2仕切部112が、装置本体10内に上下に蛇行した粉体流路100を形成し、第1ガス収容部101、第2ガス収容部103および粉体貯留部105をそれぞれ画定することができる。特に、各仕切部を挟んでガス収容部または粉体貯留部が互いに近接して配置されるため、ガス収容部および粉体貯留部が互いに離間して配置される場合と比較して、粉体Fの移動方向における粉体成膜装置1のサイズを小さくすることができる。 Further, in the present embodiment, the plurality of first partition portions 111 and the plurality of second partition portions 112 arranged in the apparatus main body 10 form a powder flow path 100 meandering up and down in the apparatus main body 10. , The first gas accommodating unit 101, the second gas accommodating unit 103, and the powder storage unit 105 can be defined, respectively. In particular, since the gas accommodating portion or the powder accommodating portion is arranged close to each other with each partition portion interposed therebetween, the powder is compared with the case where the gas accommodating portion and the powder accommodating portion are arranged apart from each other. The size of the powder film forming apparatus 1 in the moving direction of F can be reduced.
 また、本実施形態では、一の成膜処理部100Cの第1ガス収容部101および第2ガス収容部103を通過した粉体Fが、更に下流側の他の成膜処理部100Cの第1ガス収容部101および第2ガス収容部103を通過するように、装置本体10内で複数の成膜処理部100Cが互いに接続され、連続した粉体流路100が形成されている。この際、複数の成膜処理部100Cのうちの一の成膜処理部100Cの第2パージガス収容部102Bが、複数の成膜処理部100Cのうちの一の成膜処理部100Cよりも前記移動方向の下流側の他の成膜処理部100Cの第1粉体貯留部100Jに連通しており、当該第1粉体貯留部100Jは、貯留する粉体Fによって前記一の成膜処理部100Cの第2ガス収容部103と前記他の成膜処理部100Cの第1ガス収容部101との間で前記第1原料ガスおよび前記第2原料ガスが流れることを抑止するように粉体Fを貯留している。このため、複数の成膜処理部100Cにおいて粉体Fに対する成膜処理を連続的かつ効率的に行うことができる。また、各成膜処理部100C間における第1原料ガスおよび第2原料ガスの流れを粉体Fの層によって抑止し、粉体Fの表面以外における両ガスの反応を抑止することができる。なお、前記一の成膜処理部100Cの第2ガス収容部103と前記他の成膜処理部100Cの第1ガス収容部101との間に配置される、第2パージガス収容部102Bも、上記と同様に原料ガスの混触を抑止する機能を有している。 Further, in the present embodiment, the powder F that has passed through the first gas accommodating portion 101 and the second gas accommodating portion 103 of one film forming processing unit 100C is the first of the other film forming processing unit 100C on the further downstream side. A plurality of film forming processing units 100C are connected to each other in the apparatus main body 10 so as to pass through the gas accommodating unit 101 and the second gas accommodating unit 103, and a continuous powder flow path 100 is formed. At this time, the second purge gas accommodating unit 102B of the film forming processing unit 100C of one of the plurality of film forming processing units 100C moves more than the film forming processing unit 100C of one of the plurality of film forming processing units 100C. The first powder storage unit 100J communicates with the first powder storage unit 100J of another film formation processing unit 100C on the downstream side in the direction, and the first powder storage unit 100J is connected to the one film formation processing unit 100C by the stored powder F. The powder F is added so as to prevent the first raw material gas and the second raw material gas from flowing between the second gas accommodating portion 103 and the first gas accommodating portion 101 of the other film forming processing unit 100C. It is stored. Therefore, the film forming process for the powder F can be continuously and efficiently performed in the plurality of film forming processing units 100C. Further, the flow of the first raw material gas and the second raw material gas between the film forming processing units 100C can be suppressed by the layer of the powder F, and the reaction of both gases other than the surface of the powder F can be suppressed. The second purge gas accommodating unit 102B, which is arranged between the second gas accommodating unit 103 of the one film forming processing unit 100C and the first gas accommodating unit 101 of the other film forming processing unit 100C, is also described above. Similarly, it has a function of suppressing the contact of the raw material gas.
 更に、本実施形態では、粉体移動機構125が装置本体10に対して振動を付与することが可能な振動発生部を含んでいる。このため、装置本体10に対して特定方向の振動が付与されることで、粉体Fに対して粉体流路100を移動する移動力を付与することができる。このため、回転する羽根部材のように粉体Fに直接接触する機械的な移動機構を有することなく、各ガス収容部を通過するように粉体Fを安定して移動させることができる。特に、上記のような機械的な移動機構を備える場合と比較して、装置を簡略化することができるとともに、機械的な移動力によって粉体Fを構成する粒子が粉砕されることを抑止することができる。また、羽根部材の一部が粉体に混入すること(コンタミ)を防止することができる。 Further, in the present embodiment, the powder moving mechanism 125 includes a vibration generating portion capable of applying vibration to the apparatus main body 10. Therefore, by applying vibration in a specific direction to the apparatus main body 10, it is possible to apply a moving force for moving the powder flow path 100 to the powder F. Therefore, the powder F can be stably moved so as to pass through each gas accommodating portion without having a mechanical moving mechanism that directly contacts the powder F like a rotating blade member. In particular, as compared with the case where the mechanical moving mechanism as described above is provided, the apparatus can be simplified and the particles constituting the powder F can be prevented from being crushed by the mechanical moving force. be able to. In addition, it is possible to prevent a part of the blade member from being mixed with the powder (contamination).
 また、本実施形態に係る粉体成膜方法は、粉体に成膜処理を施す粉体成膜方法であって、複数の頂部と複数の底部とを有し上下に蛇行しながら水平な移動方向に粉体が流れることを許容する粉体流路100が形成されている装置本体10を準備する準備工程と、前記粉体流路100のうち前記複数の頂部よりも下方の領域に粉体Fを貯留し、当該貯留された粉体Fによって前記複数の頂部同士の間を仕切る粉体貯留工程と、前記複数の頂部のうちの一の頂部に第1原料ガスを収容する一方、前記一の頂部よりも前記移動方向下流側の他の頂部に前記第1原料ガスとは異なる第2原料ガスを収容するガス収容工程と、前記粉体流路に沿って粉体Fを前記移動方向に連続的に移動させることで、前記粉体Fを前記第1原料ガスおよび前記第2原料ガスに順に曝露させ、前記第1原料ガスのガス分子と前記第2原料ガスのガス分子との反応によって前記粉体Fの粒子の表面に成膜処理を施す成膜工程と、を備える。 Further, the powder film forming method according to the present embodiment is a powder film forming method in which a powder is subjected to a film forming process, and has a plurality of tops and a plurality of bottoms and moves horizontally while meandering up and down. A preparatory step for preparing an apparatus main body 10 in which a powder flow path 100 for allowing powder to flow in a direction is formed, and a powder in a region of the powder flow path 100 below the plurality of tops. A powder storage step of storing F and partitioning between the plurality of apexes by the stored powder F, and accommodating the first raw material gas in one of the plurality of apexes, while accommodating the first raw material gas. A gas accommodating step of accommodating a second raw material gas different from the first raw material gas at another apex on the downstream side in the moving direction from the top of the powder F, and powder F in the moving direction along the powder flow path. By continuously moving the powder F, the powder F is exposed to the first raw material gas and the second raw material gas in order, and by the reaction between the gas molecules of the first raw material gas and the gas molecules of the second raw material gas. It includes a film forming step of performing a film forming process on the surface of the particles of the powder F.
 このような方法によれば、粉体Fが複数の頂部において第1原料ガスおよび第2原料ガスに順に曝露されることによって、両ガスの反応をうけて粉体F上に連続的に膜を形成することができる。また、貯留される粉体Fによって、粉体流路100の複数の頂部間をシールすることができる。このため、複数の頂部間で各原料ガスが行き来することが抑止される。この結果、粉体Fを構成する粒子の表面とは異なる部分で原料ガス同士が混触することを抑制し、両ガスが反応することを抑止することができる。 According to such a method, the powder F is sequentially exposed to the first raw material gas and the second raw material gas at a plurality of tops, so that the powder F undergoes the reaction of both gases to continuously form a film on the powder F. Can be formed. Further, the stored powder F can seal between a plurality of tops of the powder flow path 100. Therefore, the movement of each raw material gas between the plurality of tops is suppressed. As a result, it is possible to prevent the raw material gases from coming into contact with each other at a portion different from the surface of the particles constituting the powder F, and to prevent the two gases from reacting with each other.
 上記の方法において、前記成膜工程は、前記装置本体10に対して前記移動方向および上下方向をそれぞれ含む特定方向の振動を与えることで、前記粉体Fを前記移動方向に移動させることを含む。このような方法よれば、各頂部を通過するように粉体Fを安定して移動させることができる。 In the above method, the film forming step includes moving the powder F in the moving direction by applying vibrations in specific directions including the moving direction and the vertical direction to the apparatus main body 10. .. According to such a method, the powder F can be stably moved so as to pass through each top.
 図2は、本発明の第2実施形態に係る粉体成膜装置1の模式的な正断面図である。図1では、第1ガス収容部101、パージガス収容部102および第2ガス収容部103に対して、各原料ガスおよびパージガスが上から供給される態様にて説明したが、本発明はこれに限定されるものではない。図2に示されるように、第1ガス供給部121は、第1原料ガスを収容する第1ガスタンク121Aと、第1ガスノズル121Bと、を有する。同様に、パージガス供給部122は、パージガスを貯留するパージガスタンク122A(ガスタンク)とパージガスノズル122Bとを有し、第2ガス供給部123は、第2原料ガスを収容する第2ガスタンク123Aと、第2ガスノズル123Bとを有する。なお、第1ガス供給部121、パージガス供給部122、第2ガス供給部123のうちの少なくとも一の供給部が、上記のような構造を備えていてもよい。 FIG. 2 is a schematic normal cross-sectional view of the powder film forming apparatus 1 according to the second embodiment of the present invention. In FIG. 1, each raw material gas and purge gas are supplied from above to the first gas accommodating portion 101, the purge gas accommodating portion 102, and the second gas accommodating portion 103, but the present invention is limited thereto. It is not something that is done. As shown in FIG. 2, the first gas supply unit 121 includes a first gas tank 121A for accommodating the first raw material gas and a first gas nozzle 121B. Similarly, the purge gas supply unit 122 has a purge gas tank 122A (gas tank) for storing the purge gas and a purge gas nozzle 122B, and the second gas supply unit 123 has a second gas tank 123A for storing the second raw material gas and a second gas tank 123A. It has two gas nozzles 123B. At least one of the first gas supply unit 121, the purge gas supply unit 122, and the second gas supply unit 123 may have the above-mentioned structure.
 更に、本実施形態では、第1ガスノズル121B、パージガスノズル122Bおよび第2ガスノズル123B(いずれもガス噴出部)が、それぞれ、図1における第1粉体貯留部100J、中間粉体貯留部100M、100N、第2粉体貯留部100Kに貯留される粉体F中に配置されており、各ガスを第1ガス収容部101、パージガス収容部102および第2ガス収容部103に向かって噴出することが可能とされている。 Further, in the present embodiment, the first gas nozzle 121B, the purge gas nozzle 122B, and the second gas nozzle 123B (all of which are gas ejection portions) are the first powder storage unit 100J, the intermediate powder storage unit 100M, and 100N in FIG. 1, respectively. , It is arranged in the powder F stored in the second powder storage unit 100K, and each gas can be ejected toward the first gas storage unit 101, the purge gas storage unit 102, and the second gas storage unit 103. It is possible.
 このような構成によれば、各ガスノズルが各粉体貯留部の下流側において、粉体Fの流れ方向において更に下流側に配置されるガス収容部の上流側部分に向かって、前記ガス収容部と同種の原料ガスを噴出可能なように配置されている。このため、当該ガスノズルが原料ガスを噴出するとその噴出力によって粉体を流動化させて振動による搬送を促進することができる。なお、上記の各ガスノズルが粉体F中に配置されるものとして、ガスノズルが粉体貯留部の壁面または底面に配置され、当該ノズルの先端部が粉体F中に露出するものでもよい。 According to such a configuration, the gas accommodating portion is directed toward the upstream portion of the gas accommodating portion in which each gas nozzle is arranged on the downstream side of each powder storage portion and further downstream in the flow direction of the powder F. It is arranged so that the same kind of raw material gas can be ejected. Therefore, when the gas nozzle ejects the raw material gas, the powder can be fluidized by the ejection output to promote the transportation by vibration. Assuming that each of the above gas nozzles is arranged in the powder F, the gas nozzles may be arranged on the wall surface or the bottom surface of the powder storage portion, and the tip portion of the nozzle may be exposed in the powder F.
 図3は、本発明の第3実施形態に係る粉体成膜装置1の模式的な正断面図である。上記の第1、第2実施形態では、箱型の装置本体10の内部が複数の第1仕切部111および複数の第2仕切部112によって仕切られることで、粉体流路100が形成される態様にて説明したが、図3に示すように、装置本体10は上下に蛇行したパイプ(管材)からなるものでもよい。この場合も、パイプの頂部に第1ガス収容部101、各パージガス収容部102および第2ガス収容部103がそれぞれ形成され、パイプの底部に粉体Fを貯留する粉体貯留部105が形成される。このような構成においても、粉体移動機構125が装置本体10に振動を付与することで、粉体Fが各ガス収容部を通過し、粉体Fを構成する粒子上に成膜処理を施すことができる。 FIG. 3 is a schematic normal cross-sectional view of the powder film forming apparatus 1 according to the third embodiment of the present invention. In the first and second embodiments described above, the powder flow path 100 is formed by partitioning the inside of the box-shaped apparatus main body 10 by a plurality of first partition portions 111 and a plurality of second partition portions 112. Although described in the embodiment, as shown in FIG. 3, the apparatus main body 10 may be made of a pipe (pipe material) meandering up and down. Also in this case, the first gas accommodating portion 101, each purge gas accommodating portion 102, and the second gas accommodating portion 103 are formed at the top of the pipe, and the powder storage portion 105 for storing the powder F is formed at the bottom of the pipe. NS. Even in such a configuration, the powder moving mechanism 125 applies vibration to the apparatus main body 10, so that the powder F passes through each gas accommodating portion and a film forming process is performed on the particles constituting the powder F. be able to.
 図4は、本発明の第4実施形態に係る粉体成膜装置1の模式的な斜視図である。本実施形態では、先の第1実施形態における複数の成膜処理部100Cが、その粉体流路100が上下方向に延びる中心軸周りに螺旋状に配設されるように互いに接続されている。このような構成によれば、複数の成膜処理部100Cにおいて粉体Fに対する成膜処理を連続的に行うことができるとともに、複数の成膜処理部100Cが水平方向に沿って互いに接続される場合と比較して、粉体成膜装置1の設置面積を小さくすることができる。なお、粉体Fが螺旋を下るように粉体Fを搬送する場合には、粉体移動機構125が図4の矢印D1方向に振動を付与し、粉体Fが螺旋を上るように粉体Fを搬送する場合には、粉体移動機構125が図4の矢印D1′方向に振動を付与すればよい。 FIG. 4 is a schematic perspective view of the powder film forming apparatus 1 according to the fourth embodiment of the present invention. In the present embodiment, the plurality of film forming processing units 100C according to the first embodiment are connected to each other so that the powder flow path 100 is spirally arranged around a central axis extending in the vertical direction. .. According to such a configuration, the film forming process for the powder F can be continuously performed in the plurality of film forming processing sections 100C, and the plurality of film forming processing sections 100C are connected to each other along the horizontal direction. Compared with the case, the installation area of the powder film forming apparatus 1 can be reduced. When the powder F is conveyed so as to go down the spiral, the powder moving mechanism 125 applies vibration in the direction of arrow D1 in FIG. 4, so that the powder F goes up the spiral. When transporting F, the powder moving mechanism 125 may apply vibration in the direction of arrow D1'in FIG.
 図5および図6は、本発明の第5実施形態に係る粉体成膜装置の模式的な水平断面図および透視斜視図である。本実施形態では、単一の成膜処理部100Cが円筒状の装置本体10内に配置されており、その上流側と下流側とが互いに接続されている。 5 and 6 are a schematic horizontal sectional view and a perspective perspective view of the powder film forming apparatus according to the fifth embodiment of the present invention. In the present embodiment, a single film forming processing unit 100C is arranged in the cylindrical apparatus main body 10, and the upstream side and the downstream side thereof are connected to each other.
 詳しくは、粉体Fが同じ成膜処理部100Cの第1ガス収容部101および第2ガス収容部103を繰り返し通過可能なように、成膜処理部100Cの第2パージガス収容部102B(図1参照)が成膜処理部100Cの第1粉体貯留部100J(図1参照)に連通している(無限ループ状)。そして、成膜処理部100Cの第1粉体貯留部100Jは、貯留する粉体Fによって第2ガス収容部103と下流側の第1ガス収容部101との間で前記第1原料ガスおよび前記第2原料ガスが流れることをそれぞれ抑止するように粉体Fを貯留している。そして、図6の矢印D1方向の振動を付与することによって、図5、図6の矢印D2のように粉体Fが各第1仕切部111を潜り、図5、図6の矢印D3のように粉体Fが各第2仕切部112を乗り越えることができる。 Specifically, the second purge gas accommodating portion 102B of the film forming processing unit 100C (FIG. 1) so that the powder F can repeatedly pass through the first gas accommodating portion 101 and the second gas accommodating portion 103 of the same film forming processing unit 100C. (See) communicates with the first powder storage unit 100J (see FIG. 1) of the film forming processing unit 100C (infinite loop shape). Then, the first powder storage unit 100J of the film forming processing unit 100C receives the first raw material gas and the said first raw material gas between the second gas storage unit 103 and the first gas storage unit 101 on the downstream side by the stored powder F. The powder F is stored so as to prevent the flow of the second raw material gas. Then, by applying the vibration in the direction of the arrow D1 in FIG. 6, the powder F goes under each of the first partition portions 111 as shown by the arrows D2 in FIGS. 5 and 6, and as shown by the arrows D3 in FIGS. 5 and 6. The powder F can get over each of the second partition portions 112.
 このような構成によれば、粉体Fを同じ第1ガス収容部101および第2ガス収容部103を通過させることで、粉体Fに対して成膜処理を連続的に行うことができる。このため、より多くの成膜処理部100Cが互いに接続される場合と比較して、粉体成膜装置1のサイズを小さくすることができるとともに、粉体Fが同じ第1ガス収容部101および第2ガス収容部103を1回ずつ通過する場合と比較して、多数の粉体貯留部およびガス収容部を並べる必要がなく、最小数の粉体貯留部およびガス収容部で構成することができる。この結果、粉体Fに効率的に成膜を施すことができる。なお、図5、図6に示すような無限ループ状の構造は、複数の成膜処理部100Cが連続して接続され、ループ状に配置されるものでもよい。 According to such a configuration, by passing the powder F through the same first gas accommodating portion 101 and the second gas accommodating portion 103, the film forming process can be continuously performed on the powder F. Therefore, the size of the powder film forming apparatus 1 can be reduced as compared with the case where more film forming processing sections 100C are connected to each other, and the first gas accommodating section 101 and the powder F having the same powder F can be reduced. Compared with the case where the second gas accommodating portion 103 is passed once, it is not necessary to arrange a large number of powder accommodating portions and gas accommodating portions, and the minimum number of powder accommodating portions and gas accommodating portions can be configured. can. As a result, the powder F can be efficiently formed into a film. The infinite loop-shaped structure as shown in FIGS. 5 and 6 may be a structure in which a plurality of film forming processing units 100C are continuously connected and arranged in a loop shape.
 以上、本発明の一実施形態に係る粉体成膜装置1およびこれを用いた成膜処理方法について説明したが、本発明はこれらの形態に限定されるものではなく、以下のような変形実施形態が可能である。 Although the powder film forming apparatus 1 according to the embodiment of the present invention and the film forming treatment method using the same have been described above, the present invention is not limited to these forms, and the following modifications are carried out. The form is possible.
 (1)上記の第1実施形態では、原料ガス排気部120、第1ガス供給部121、パージガス供給部122、第2ガス供給部123、パージガス排気部124が図1に示されるように配置される態様にて説明したが、これらの構造物の数は、上記の態様に限定されるものでない。一例として、一つの第1ガス排気部120Aが、複数の第1ガス収容部101に連通し、各第1ガス収容部101から第1原料ガスを排気してもよい。同様に、一つの第2ガス排気部120Bが、複数の第2ガス収容部103に連通し、各第2ガス収容部103から第2原料ガスを排気してもよい。更に、一つのパージガス排気部124が複数のパージガス収容部102に連通し、各パージガス収容部102からパージガスを排気してもよい。他の実施形態においても同様である。また、各実施形態において、装置本体10内に配置される成膜処理部100Cの数は限定されるものではなく、少なくとも一つの成膜処理部100Cが配置されればよい。 (1) In the above first embodiment, the raw material gas exhaust unit 120, the first gas supply unit 121, the purge gas supply unit 122, the second gas supply unit 123, and the purge gas exhaust unit 124 are arranged as shown in FIG. However, the number of these structures is not limited to the above aspect. As an example, one first gas exhaust unit 120A may communicate with a plurality of first gas accommodating units 101 and exhaust the first raw material gas from each of the first gas accommodating units 101. Similarly, one second gas exhaust unit 120B may communicate with a plurality of second gas accommodating units 103 and exhaust the second raw material gas from each of the second gas accommodating units 103. Further, one purge gas exhaust unit 124 may communicate with a plurality of purge gas accommodating units 102, and the purge gas may be exhausted from each purge gas accommodating unit 102. The same applies to other embodiments. Further, in each embodiment, the number of film forming processing units 100C arranged in the apparatus main body 10 is not limited, and at least one film forming processing unit 100C may be arranged.
 (2)上記の第1実施形態では、装置本体10が水平方向に延びるように配置される態様にて説明したが、本発明はこれに限定されるものではない。図1において、装置本体10のうち前記移動方向の上流側部分よりも前記移動方向の下流側部分の方が下方に位置するように前記装置本体10が傾斜して配置されてもよい。このような構成によれば、移動方向に沿って粉体流路100を先下がりに設定することができるため、重力の作用を受けて、粉体Fの移動を促進することができる。なお、この場合も粉体Fは少なくとも水平な方向を含むような移動方向に移動される。また、他の実施形態においても、同様に装置本体10に傾斜をもたせてもよい。 (2) In the first embodiment described above, the device main body 10 is arranged so as to extend in the horizontal direction, but the present invention is not limited to this. In FIG. 1, the device main body 10 may be arranged at an angle so that the downstream portion in the moving direction of the device main body 10 is located lower than the upstream portion in the moving direction. According to such a configuration, since the powder flow path 100 can be set downward along the moving direction, the movement of the powder F can be promoted under the action of gravity. In this case as well, the powder F is moved in a moving direction including at least a horizontal direction. Further, in other embodiments as well, the apparatus main body 10 may be inclined in the same manner.
 (3)上記の第1実施形態では、第1ガス収容部101と第2ガス収容部103との間に第1パージガス収容部102Aが配置され、第2ガス収容部103の下流側に第2パージガス収容部102Bが配置される態様にて説明したが、これらのパージガス収容部102A、102Bは配置されなくてもよく、一方のパージガス収容部102のみが配置されてもよい。 (3) In the above first embodiment, the first purge gas accommodating unit 102A is arranged between the first gas accommodating unit 101 and the second gas accommodating unit 103, and the second purge gas accommodating unit 102A is located on the downstream side of the second gas accommodating unit 103. Although the embodiment in which the purge gas accommodating portion 102B is arranged has been described, these purge gas accommodating portions 102A and 102B may not be arranged, and only one of the purge gas accommodating portions 102 may be arranged.
 図7は、本発明の変形実施形態に係る粉体成膜装置の模式的な正断面図である。図7のように、第1ガス収容部101および第2ガス収容部103が移動方向に沿って交互に配置され、第1ガス収容部101と第2ガス収容部103とに下方から跨るように、各粉体貯留部105が配設されるものでもよい。すなわち、本変形実施形態では、図1の第1パージガス収容部102A、第2パージガス収容部102B、中間粉体貯留部100M、100Nが備えられておらず、複数の粉体貯留部105の各々は、第1ガス収容部101および第2ガス収容部103のうちの一方のガス収容部の前記移動方向の上流側部分に下方から連通するとともに、第1ガス収容部101および第2ガス収容部103のうちの他方のガス収容部の前記移動方向の下流側部分に下方から連通している。このような構成によれば、第1実施形態のようなパージガス収容部102を有する場合と比較して、粉体成膜装置1の移動方向におけるサイズを小さくすることが可能となる。 FIG. 7 is a schematic normal cross-sectional view of the powder film forming apparatus according to the modified embodiment of the present invention. As shown in FIG. 7, the first gas accommodating portion 101 and the second gas accommodating portion 103 are alternately arranged along the moving direction so as to straddle the first gas accommodating portion 101 and the second gas accommodating portion 103 from below. , Each powder storage unit 105 may be arranged. That is, in this modified embodiment, the first purge gas accommodating portion 102A, the second purge gas accommodating portion 102B, the intermediate powder storage portions 100M, and 100N of FIG. 1 are not provided, and each of the plurality of powder storage portions 105 is provided. , The first gas accommodating portion 101 and the second gas accommodating portion 103 communicate with the upstream portion of one of the first gas accommodating portions 101 and the second gas accommodating portion 103 in the moving direction from below. The other gas accommodating portion of the gas accommodating portion communicates with the downstream portion in the moving direction from below. According to such a configuration, it is possible to reduce the size of the powder film forming apparatus 1 in the moving direction as compared with the case where the purge gas accommodating portion 102 as in the first embodiment is provided.
 (4)また、上記の第1実施形態では、パージガス排気部124が、第1パージガス収容部102Aおよび第2パージガス収容部102Bからパージガスをそれぞれ排気し、各パージガス収容部が第1ガス収容部101および第2ガス収容部103に対して負圧に設定される態様にて説明したが、本発明はこれに限定されるものではない。パージガス収容部102A、102Bの圧力が、第1ガス収容部101の圧力および第2ガス収容部103の圧力よりも高くなるように、流量制御弁122C(圧力調整機構)が各パージガス収容部の圧力を調整するものでもよい。この場合、各パージガス収容部が各ガス収容部に対して正圧に設定されるため、粉体内に残留する第1原料ガスおよび第2原料ガスの余剰分が各パージガス収容部に流入し互いに混触することを防止することができる。 (4) Further, in the above-described first embodiment, the purge gas exhaust unit 124 exhausts the purge gas from the first purge gas accommodating unit 102A and the second purge gas accommodating unit 102B, respectively, and each purge gas accommodating unit 101 The present invention has been described in the manner in which the negative pressure is set with respect to the second gas accommodating portion 103, but the present invention is not limited thereto. The flow control valve 122C (pressure adjusting mechanism) sets the pressure of each purge gas accommodating portion so that the pressure of the purge gas accommodating portions 102A and 102B is higher than the pressure of the first gas accommodating portion 101 and the pressure of the second gas accommodating portion 103. May be adjusted. In this case, since each purge gas accommodating portion is set to a positive pressure with respect to each gas accommodating portion, excess amounts of the first raw material gas and the second raw material gas remaining in the powder flow into each purge gas accommodating portion and come into contact with each other. It can be prevented from doing so.
 (5)また、粉体成膜装置1における粉体Fの移動方向は右方向(水平方向)に限定されるものではなく、水平な方向に対して上方または下方に傾斜した略水平方向であってもよいし、粉体Fの移動が可能であれば、上下方向と鋭角に交差する所定の移動方向であってもよい。当該所定の方向には、水平方向および前記略水平方向が含まれる。また、粉体Fを安定して搬送するために、前記移動方向と水平方向とがなす角度は60度以内に設定されることが望ましく、45度以内に設定されることが更に望ましい。 (5) Further, the moving direction of the powder F in the powder film forming apparatus 1 is not limited to the right direction (horizontal direction), but is a substantially horizontal direction inclined upward or downward with respect to the horizontal direction. Alternatively, if the powder F can be moved, it may be in a predetermined moving direction that intersects the vertical direction at a sharp angle. The predetermined direction includes a horizontal direction and the substantially horizontal direction. Further, in order to stably convey the powder F, the angle formed by the moving direction and the horizontal direction is preferably set within 60 degrees, and more preferably set within 45 degrees.
 (6)また、上記の実施形態では、第1ガス収容部101および第2ガス収容部103が前記移動方向に沿って交互に配置されており第1ガス収容部101と第2ガス収容部103との間に複数のパージガス収容部102がそれぞれ配置される態様にて説明したが、当該複数のパージガス収容部102の代わりに、専用のガスを収容しない複数のダミーガス収容部がそれぞれ配置されてもよい。すなわち、ダミーガス収容部にはパージガス供給部122から前記パージガスが供給されない。このような場合でも、第1原料ガスおよび第2原料ガスが、粉体Fの粒子の表面以外において互いに混触することを抑止することができる。なお、ダミーガス収容部に流入した各原料ガスを排気するために、前記ダミーガス収容部にパージガス排気部124と同様の排気機構が接続される。この結果、ダミーガス収容部に侵入、滞留した第1原料ガスおよび第2原料ガスの混触を防止することができる。 (6) Further, in the above embodiment, the first gas accommodating portion 101 and the second gas accommodating portion 103 are alternately arranged along the moving direction, and the first gas accommodating portion 101 and the second gas accommodating portion 103 are arranged alternately. Although a plurality of purge gas accommodating portions 102 are respectively arranged between the above, even if a plurality of dummy gas accommodating portions that do not accommodate the dedicated gas are arranged in place of the plurality of purge gas accommodating portions 102, respectively. good. That is, the purge gas is not supplied from the purge gas supply unit 122 to the dummy gas storage unit. Even in such a case, it is possible to prevent the first raw material gas and the second raw material gas from coming into contact with each other except on the surface of the particles of the powder F. In order to exhaust each raw material gas that has flowed into the dummy gas accommodating portion, an exhaust mechanism similar to that of the purge gas exhaust portion 124 is connected to the dummy gas accommodating portion. As a result, it is possible to prevent the first raw material gas and the second raw material gas from coming into contact with each other and staying in the dummy gas accommodating portion.
 本発明によって提供されるのは、粉体に成膜処理を施す粉体成膜装置であって、装置本体と、第1原料ガスを供給することが可能な第1ガス供給部と、前記第1原料ガスとは異なる第2原料ガスを供給することが可能な第2ガス供給部と、前記装置本体に設けられ、前記第1原料ガスのガス分子と前記第2原料ガスのガス分子との反応によって粉体の粒子の表面に膜を形成することが可能な少なくとも一つの成膜処理部であって、複数の頂部と複数の底部とを有し上下に蛇行しながら上下方向と交差する移動方向に粉体が流れることを許容する粉体流路が形成されている少なくとも一つの成膜処理部と、前記少なくとも一つの成膜処理部において前記粉体流路に沿って粉体を連続的に移動させることが可能な粉体移動機構と、を備える。前記少なくとも一つの成膜処理部は、前記粉体流路の前記底部をそれぞれ構成し、粉体を貯留する複数の粉体貯留部と、前記粉体流路の前記頂部をそれぞれ構成し、前記複数の粉体貯留部のうち隣接する粉体貯留部同士を互いに接続するとともに内部にガスを収容する複数のガス収容部であって、前記第1ガス供給部から前記第1原料ガスを受け入れ当該第1原料ガスを収容する第1ガス収容部と前記第2ガス供給部から前記第2原料ガスを受け入れ当該第2原料ガスを収容する第2ガス収容部とを少なくとも含む複数のガス収容部と、を有し、前記粉体移動機構は、粉体が前記粉体貯留部から前記ガス収容部に流入することで前記ガス収容部内のガスに曝露され、粉体が前記ガス収容部から次の粉体貯留部に流入するように、前記粉体流路において粉体を移動させ、前記複数の粉体貯留部は、隣接するガス収容部同士の間で前記粉体流路に沿ってガスが流れることを前記貯留する粉体によって抑止することが可能なように粉体を貯留する形状を有している。 Provided by the present invention is a powder film forming apparatus for performing a film forming process on powder, the apparatus main body, a first gas supply unit capable of supplying a first raw material gas, and the first gas supply unit. A second gas supply unit capable of supplying a second source gas different from the first source gas, and gas molecules of the first source gas and gas molecules of the second source gas provided in the main body of the apparatus. It is at least one film forming processing portion capable of forming a film on the surface of powder particles by a reaction, and has a plurality of tops and a plurality of bottoms, and moves to intersect the vertical direction while meandering up and down. At least one film forming process section in which a powder flow path that allows powder to flow in the direction is formed, and the at least one film forming process section continuously distributes powder along the powder flow path. It is equipped with a powder moving mechanism that can be moved to. The at least one film forming processing unit constitutes the bottom portion of the powder flow path, and constitutes a plurality of powder storage portions for storing powder and the top portion of the powder flow path, respectively. A plurality of gas storage units that connect adjacent powder storage units to each other and store gas inside, and receive the first raw material gas from the first gas supply unit. A plurality of gas accommodating units including at least a first gas accommodating unit for accommodating the first raw material gas and a second gas accommodating unit for receiving the second raw material gas from the second gas supply unit and accommodating the second raw material gas. The powder transfer mechanism is exposed to the gas in the gas accommodating portion by flowing the powder from the powder accommodating portion into the gas accommodating portion, and the powder is next from the gas accommodating portion. The powder is moved in the powder flow path so as to flow into the powder storage section, and the plurality of powder storage sections allow gas to flow along the powder flow path between adjacent gas storage sections. It has a shape for storing powder so that the flow can be suppressed by the stored powder.
 本構成によれば、粉体が成膜処理部の粉体流路を連続的に移動すると、当該粉体が第1ガス収容部および第2ガス収容部において第1原料ガスおよび第2原料ガスに順に曝露され、各粒子の表面に吸着したそれぞれのガス分子の反応によって粉体上に連続的に膜を形成することができる。また、複数の粉体貯留部は、隣接するガス収容部同士の間で粉体流路に沿ってガスが流れることを前記貯留する粉体によって抑止することが可能とされている。このため、粉体を構成する粒子の表面以外での原料ガス同士の混触を抑止することができる。 According to this configuration, when the powder continuously moves in the powder flow path of the film forming processing portion, the powder is transferred to the first gas accommodating portion and the second gas accommodating portion in the first raw material gas and the second raw material gas. It is possible to continuously form a film on the powder by the reaction of each gas molecule adsorbed on the surface of each particle. Further, the plurality of powder storage units can prevent gas from flowing along the powder flow path between adjacent gas storage units by the stored powder. Therefore, it is possible to prevent the raw material gases from coming into contact with each other except on the surface of the particles constituting the powder.
 上記の構成において、前記複数のガス収容部において、前記第1ガス収容部および前記第2ガス収容部は前記移動方向に沿って交互に配置されており、前記複数の粉体貯留部の各々は、前記第1ガス収容部および前記第2ガス収容部とそれぞれ連通していることが望ましい。 In the above configuration, in the plurality of gas accommodating portions, the first gas accommodating portion and the second gas accommodating portion are alternately arranged along the moving direction, and each of the plurality of powder accommodating portions is arranged. , It is desirable that the first gas accommodating portion and the second gas accommodating portion communicate with each other.
 本構成によれば、成膜処理部の各粉体貯留部が、第1ガス収容部と第2ガス収容部とにそれぞれ連通することで、貯留する粉体によって第1ガス収容部と第2ガス収容部との間をシールすることができる。このため、第1ガス収容部と第2ガス収容部との間で各原料ガスが行き来することが抑止される。この結果、粉体を構成する粒子の表面とは異なる部分で原料ガス同士が混触することを抑制し、両ガスが反応することを抑止することができる。また、パージガス収容部などのように原料ガスとは異なるガスを収容する他のガス収容部を有する場合と比較して、粉体成膜装置の移動方向におけるサイズを小さくすることが可能となる。 According to this configuration, each powder storage unit of the film forming processing unit communicates with the first gas storage unit and the second gas storage unit, respectively, so that the powder to be stored can be used as the first gas storage unit and the second gas storage unit. It can be sealed between the gas accommodating part. Therefore, the movement of each raw material gas between the first gas accommodating portion and the second gas accommodating portion is suppressed. As a result, it is possible to prevent the raw material gases from coming into contact with each other at a portion different from the surface of the particles constituting the powder, and to prevent the two gases from reacting with each other. Further, the size of the powder film forming apparatus in the moving direction can be reduced as compared with the case where the powder film forming apparatus has another gas accommodating portion that accommodates a gas different from the raw material gas such as a purge gas accommodating portion.
 上記の構成において、前記第1原料ガスおよび前記第2原料ガスとは異なるガスであって粉体内から余剰となった第1原料ガスまたは第2原料ガスを除去するためのパージガスを供給することが可能なパージガス供給部を更に備え、前記複数のガス収容部において前記第1ガス収容部および前記第2ガス収容部は前記移動方向に沿って交互に配置されており、前記複数のガス収容部は前記粉体流路における粉体の流れにおいて前記第1ガス収容部と前記第2ガス収容部との間にそれぞれ配置され前記パージガス供給部から前記パージガスを受け入れ当該パージガスを収容する複数のパージガス収容部を更に有することが望ましい。 In the above configuration, it is possible to supply a purge gas for removing the surplus first raw material gas or the second raw material gas from the powder, which is a gas different from the first raw material gas and the second raw material gas. A possible purge gas supply unit is further provided, and in the plurality of gas accommodating units, the first gas accommodating unit and the second gas accommodating unit are alternately arranged along the moving direction, and the plurality of gas accommodating units are arranged. A plurality of purge gas accommodating portions that are arranged between the first gas accommodating portion and the second gas accommodating portion in the powder flow in the powder flow path, receive the purge gas from the purge gas supply unit, and accommodate the purge gas. It is desirable to have more.
 本構成によれば、複数のパージガス収容部が第1ガス収容部と第2ガス収容部との間に配置されパージガスを収容することで、第1原料ガスおよび第2原料ガスが粉体の表面以外において互いに混触することを抑止し、ガス収容部を通過した粉体から原料ガスの余剰分を取り除くことができる。したがって、前記余剰分の第1原料ガスのガス分子と第2原料ガスのガス分子とが互いに反応し、不要な反応生成物が生成されることを抑止することができる。 According to this configuration, a plurality of purge gas accommodating portions are arranged between the first gas accommodating portion and the second gas accommodating portion to accommodate the purge gas, so that the first raw material gas and the second raw material gas are on the surface of the powder. Other than that, it is possible to prevent the powder from coming into contact with each other and remove the excess amount of the raw material gas from the powder that has passed through the gas accommodating portion. Therefore, it is possible to prevent the excess gas molecules of the first raw material gas and the gas molecules of the second raw material gas from reacting with each other to generate an unnecessary reaction product.
 上記の構成において、前記パージガス収容部の圧力が、前記第1ガス収容部の圧力および前記第2ガス収容部の圧力よりも低くなるように、前記パージガス収容部の圧力を調整する圧力調整機構と、前記パージガス収容部から前記パージガスを排気する排気機構と、を更に備えることが望ましい。 In the above configuration, with a pressure adjusting mechanism that adjusts the pressure of the purge gas accommodating portion so that the pressure of the purge gas accommodating portion is lower than the pressure of the first gas accommodating portion and the pressure of the second gas accommodating portion. It is desirable to further include an exhaust mechanism for exhausting the purge gas from the purge gas accommodating portion.
 本構成によれば、各パージガス収容部が各ガス収容部に対して負圧に設定されるため、粉体内に残留する第1原料ガスおよび第2原料ガスの余剰分が各パージガス収容部に引き寄せられやすい。このため、排気機構によってこれらの余剰ガスをパージガスとともに確実に排気することができる。 According to this configuration, since each purge gas accommodating portion is set to a negative pressure with respect to each gas accommodating portion, excess amounts of the first raw material gas and the second raw material gas remaining in the powder are attracted to each purge gas accommodating portion. Easy to get rid of. Therefore, the exhaust mechanism can reliably exhaust these excess gases together with the purge gas.
 上記の構成において、前記パージガス収容部の圧力が、前記第1ガス収容部の圧力および前記第2ガス収容部の圧力よりも高くなるように、前記パージガス収容部の圧力を調整する圧力調整機構と、前記パージガス収容部から前記パージガスを排気する排気機構と、を更に備えるものでもよい。 In the above configuration, the pressure adjusting mechanism that adjusts the pressure of the purge gas accommodating portion so that the pressure of the purge gas accommodating portion becomes higher than the pressure of the first gas accommodating portion and the pressure of the second gas accommodating portion. , An exhaust mechanism for exhausting the purge gas from the purge gas accommodating portion may be further provided.
 本構成によれば、パージガス収容部が各ガス収容部に対して正圧に設定されるため、粉体内に残留する第1原料ガスおよび第2原料ガスの余剰分が各パージガス収容部に流入し互いに混触することを防止することができる。 According to this configuration, since the purge gas accommodating portion is set to a positive pressure with respect to each gas accommodating portion, the surplus of the first raw material gas and the second raw material gas remaining in the powder flows into each purge gas accommodating portion. It is possible to prevent them from touching each other.
 上記の構成において、前記複数のガス収容部において、前記第1ガス収容部および前記第2ガス収容部は前記移動方向に沿って交互に配置されており、前記複数のガス収容部は、前記粉体流路における粉体の流れにおいて前記第1ガス収容部と前記第2ガス収容部との間にそれぞれ配置される複数のダミーガス収容部を更に有し、前記ダミーガス収容部に接続される排気機構を更に備えるものでもよい。 In the above configuration, in the plurality of gas accommodating portions, the first gas accommodating portion and the second gas accommodating portion are alternately arranged along the moving direction, and the plurality of gas accommodating portions are the powder. An exhaust mechanism that further has a plurality of dummy gas accommodating portions arranged between the first gas accommodating portion and the second gas accommodating portion in the flow of powder in the body flow path, and is connected to the dummy gas accommodating portion. May be further provided.
 本構成によれば、第1原料ガスおよび第2原料ガスが粉体の粒子の表面以外において互いに混触することを抑止することができる。また、ダミーガス収容部に侵入、滞留した第1原料ガスおよび第2原料ガスの混触を排気機構によって防止することができる。 According to this configuration, it is possible to prevent the first raw material gas and the second raw material gas from coming into contact with each other except on the surface of the powder particles. Further, the exhaust mechanism can prevent the first raw material gas and the second raw material gas from coming into contact with each other and staying in the dummy gas accommodating portion.
 上記の構成において、前記装置本体は、底壁と、前記底壁の上方に配置される天壁と、前記装置本体の前記天壁に前記移動方向に互いに間隔をおいて配置されかつ前記天壁から下方にそれぞれ延び前記粉体流路を画定する少なくとも3つの第1仕切部であって、前記底壁に対して所定の間隔をおいて配置される第1仕切先端部をそれぞれ有する、少なくとも3つの第1仕切部と、前記少なくとも3つの第1仕切部のうち前記移動方向において互いに隣接する前記第1仕切部同士の間にそれぞれ配置されるように前記装置本体の前記底壁に前記移動方向に互いに間隔をおいて配置されかつ前記底壁から上方にそれぞれ延び前記粉体流路を画定する複数の第2仕切部であって、前記天壁に対して所定の間隔をおいて配置される第2仕切先端部をそれぞれ有する、複数の第2仕切部と、を有し、前記少なくとも3つの第1仕切部のうち前記移動方向において互いに隣接する複数対の前記第1仕切部が、少なくとも前記第2仕切先端部よりも上方の部分において、前記複数のガス収容部をそれぞれ画定し、前記複数の第2仕切部のうちの前記移動方向において互いに隣接する少なくとも一対の前記第2仕切部が、前記第1仕切先端部を両側から挟むように前記粉体貯留部を画定することが望ましい。 In the above configuration, the device main body is arranged on the bottom wall, the top wall arranged above the bottom wall, and the top wall of the device main body at intervals in the moving direction, and the top wall. At least three first partitions extending downward from the surface and defining the powder flow path, each having a first partition tip portion arranged at a predetermined interval with respect to the bottom wall. The movement direction on the bottom wall of the apparatus main body so as to be arranged between the first partition and the first partition adjacent to each other in the movement direction among the at least three first partitions. A plurality of second partition portions that are spaced apart from each other and extend upward from the bottom wall to define the powder flow path, and are arranged at predetermined intervals with respect to the top wall. A plurality of pairs of the first partition portions having a plurality of second partition portions each having a second partition tip portion and adjacent to each other in the moving direction among the at least three first partition portions are at least said. In the portion above the tip of the second partition, the plurality of gas accommodating portions are defined, and at least a pair of the second partition portions adjacent to each other in the moving direction among the plurality of second partition portions are formed. It is desirable to define the powder storage portion so as to sandwich the tip of the first partition from both sides.
 本構成によれば、装置本体内に配設された第1仕切部および第2仕切部が、複数のガス収容部および粉体貯留部をそれぞれ画定することができる。この場合、各仕切部を挟んでガス収容部または粉体貯留部が互いに近接して配置されるため、ガス収容部および粉体貯留部が互いに離間して配置される場合と比較して、粉体成膜装置のサイズを小さくすることができる。 According to this configuration, the first partition portion and the second partition portion arranged in the main body of the apparatus can define a plurality of gas accommodating portions and powder storage portions, respectively. In this case, since the gas accommodating portion or the powder accommodating portion is arranged close to each other with each partition portion interposed therebetween, the powder is compared with the case where the gas accommodating portion and the powder accommodating portion are arranged apart from each other. The size of the body film forming apparatus can be reduced.
 上記の構成において、前記装置本体のうち前記移動方向の上流側部分よりも前記移動方向の下流側部分の方が下方に位置するように前記装置本体が傾斜して配置されていることが望ましい。 In the above configuration, it is desirable that the device main body is inclined so that the downstream portion in the moving direction of the device main body is located lower than the upstream portion in the moving direction.
 本構成によれば、移動方向に沿って粉体流路を先下がりに配設することができるため、重力の作用を受けて、粉体の移動を促進することができる。 According to this configuration, since the powder flow path can be arranged in the downward direction along the moving direction, the movement of the powder can be promoted by the action of gravity.
 上記の構成において、前記少なくとも一つの成膜処理部の前記第1ガス収容部および前記第2ガス収容部を通過した粉体が、前記複数の成膜処理部のうちの他の成膜処理部の前記第1ガス収容部および前記第2ガス収容部を通過するように、前記複数の成膜処理部が互いに接続されていることが望ましい。 In the above configuration, the powder that has passed through the first gas accommodating portion and the second gas accommodating portion of the at least one film forming processing unit is the other film forming processing unit of the plurality of film forming processing units. It is desirable that the plurality of film forming processing portions are connected to each other so as to pass through the first gas accommodating portion and the second gas accommodating portion.
 本構成によれば、複数の成膜処理部において粉体に対する成膜処理を連続的に行うことができるため、成膜処理を効率的に行うことができる。また、各成膜処理部間における第1原料ガスおよび第2原料ガスの流れを粉体によって抑止し、粉体を構成する粒子の表面以外における両ガスの反応を抑止することができる。 According to this configuration, it is possible to continuously perform the film forming process on the powder in a plurality of film forming processing sections, so that the film forming process can be efficiently performed. Further, the flow of the first raw material gas and the second raw material gas between the film forming processing portions can be suppressed by the powder, and the reaction of both gases other than the surface of the particles constituting the powder can be suppressed.
 上記の構成において、前記複数の成膜処理部は、前記粉体流路が上下方向に延びる中心軸周りに螺旋状に配設されるように互いに接続されていることが望ましい。 In the above configuration, it is desirable that the plurality of film forming processing portions are connected to each other so that the powder flow path is spirally arranged around a central axis extending in the vertical direction.
 本構成によれば、複数の成膜処理部において粉体に対する成膜処理を連続的に行うことができるとともに、複数の成膜処理部が水平方向に沿って互いに接続される場合と比較して、成膜処理装置の設置面積を小さくすることができる。 According to this configuration, it is possible to continuously perform the film forming process on the powder in the plurality of film forming processing sections, and as compared with the case where the plurality of film forming processing sections are connected to each other along the horizontal direction. , The installation area of the film forming processing apparatus can be reduced.
 上記の構成において、粉体が前記少なくとも一つの成膜処理部のうち同じ前記第1ガス収容部および前記第2ガス収容部を繰り返し通過可能なように、前記少なくとも一つの成膜処理部の前記粉体流路のうち前記第2ガス収容部よりも前記移動方向下流側部分が当該少なくとも一つの成膜処理部の前記粉体流路のうち前記第1ガス収容部よりも前記移動方向上流側部分に連通していることが望ましい。 In the above configuration, the film forming section of the at least one film forming process so that the powder can repeatedly pass through the same first gas accommodating section and the second gas accommodating section of the at least one film forming process section. The portion of the powder flow path downstream of the second gas accommodating portion in the moving direction is the upstream side of the powder flow path of the at least one film forming processing portion in the moving direction of the first gas accommodating portion. It is desirable to communicate with the part.
 本構成によれば、粉体を同じ第1ガス収容部および第2ガス収容部を繰り返し通過させることで、粉体に対して成膜処理を連続的に行うことができる。このため、粉体が第1ガス収容部および第2ガス収容部を1回ずつ通過する場合と比較して、多数の粉体貯留部およびガス収容部を並べる必要がなく、最小数の粉体貯留部およびガス収容部で構成することができる。 According to this configuration, the film formation process can be continuously performed on the powder by repeatedly passing the powder through the same first gas accommodating portion and the second gas accommodating portion. Therefore, as compared with the case where the powder passes through the first gas accommodating portion and the second gas accommodating portion once, it is not necessary to arrange a large number of powder accommodating portions and gas accommodating portions, and the minimum number of powders is required. It can be composed of a storage unit and a gas storage unit.
 上記の構成において、前記少なくとも一つの成膜処理部の前記第1ガス収容部および前記第2ガス収容部から気体を排気する真空ポンプを更に備えることが望ましい。 In the above configuration, it is desirable to further include a vacuum pump that exhausts gas from the first gas accommodating portion and the second gas accommodating portion of the at least one film forming processing unit.
 本構成によれば、各ガス収容部を真空引きしながら、必要量の原料ガスを供給することができるため、各ガス収容部における原料ガスの純度を高めることができる。この結果、粉体に対して高純度の成膜処理を行うことができる。 According to this configuration, the required amount of raw material gas can be supplied while evacuating each gas accommodating portion, so that the purity of the raw material gas in each gas accommodating portion can be increased. As a result, the powder can be subjected to a high-purity film forming process.
 上記の構成において、前記粉体移動機構は、前記装置本体に対して前記移動方向および上下方向をそれぞれ含む特定方向の振動を与える振動発生部を含むことが望ましい。 In the above configuration, it is desirable that the powder moving mechanism includes a vibration generating portion that gives vibration to the device main body in specific directions including the moving direction and the vertical direction, respectively.
 本構成によれば、装置本体に対して特定方向の振動が付与されることで、粉体流路を移動する移動力を粉体に付与することができる。このため、回転する羽根部材のように粉体に直接接触する機械的な移動機構を有することなく、各ガス収容部を通過するように粉体を安定して移動させることができる。したがって、上記のような機械的な移動機構を備える場合と比較して、装置を簡略化することができるとともに、機械的な移動力によって粉体を構成する粒子が粉砕されることを抑止することができる。また、羽根部材の一部が粉体に混入すること(コンタミ)を防止することができる。 According to this configuration, by applying vibration in a specific direction to the main body of the device, it is possible to apply a moving force for moving in the powder flow path to the powder. Therefore, the powder can be stably moved so as to pass through each gas accommodating portion without having a mechanical moving mechanism that directly contacts the powder like a rotating blade member. Therefore, as compared with the case where the mechanical moving mechanism as described above is provided, the apparatus can be simplified and the particles constituting the powder can be prevented from being crushed by the mechanical moving force. Can be done. In addition, it is possible to prevent a part of the blade member from being mixed with the powder (contamination).
 上記の構成において、前記第1ガス供給部および前記第2ガス供給部のうちの少なくとも一方のガス供給部は、前記第1原料ガスまたは前記第2原料ガスを収容するガスタンクと、前記粉体貯留部において貯留される粉体中に配置され、前記ガスタンクから原料ガスを受け入れるとともに前記第1ガス収容部または前記第2ガス収容部に向かって前記原料ガスを噴出することが可能なガス噴出部と、を有することが望ましい。この際、当該ガス噴出部は、前記第1粉体貯留部の下流側または前記第2粉体貯留部の下流側に配置されることが更に望ましい。 In the above configuration, at least one gas supply unit of the first gas supply unit and the second gas supply unit is a gas tank accommodating the first raw material gas or the second raw material gas, and the powder storage. A gas ejection part that is arranged in the powder stored in the unit and is capable of receiving the raw material gas from the gas tank and ejecting the raw material gas toward the first gas accommodating portion or the second gas accommodating portion. , Is desirable. At this time, it is more desirable that the gas ejection part is arranged on the downstream side of the first powder storage part or the downstream side of the second powder storage part.
 本構成によれば、ガス噴出部が原料ガスを噴出するとその噴出力によって粉体を流動化させて粉体がガス収容部に流入することを促進することができる。 According to this configuration, when the gas ejection part ejects the raw material gas, the powder can be fluidized by the ejection output and the powder can be promoted to flow into the gas accommodating portion.
 本発明によって提供されるのは、粉体に成膜処理を施す粉体成膜方法であって、複数の頂部と複数の底部とを有し上下に蛇行しながら上下方向と交差する移動方向に粉体が流れることを許容する粉体流路が形成されている装置本体を準備する準備工程と、前記粉体流路のうち前記複数の頂部よりも下方の領域に粉体を貯留し、当該貯留された粉体によって前記複数の頂部同士の間を仕切る、粉体貯留工程と、前記複数の頂部のうちの一の頂部に第1原料ガスを収容する一方、前記一の頂部よりも前記移動方向下流側の他の頂部に前記第1原料ガスとは異なる第2原料ガスを収容するガス収容工程と、前記装置本体において前記粉体流路に沿って前記粉体を前記移動方向に連続的に移動させることで、前記粉体を前記第1原料ガスおよび前記第2原料ガスに順に曝露させ、前記第1原料ガスのガス分子と前記第2原料ガスのガス分子との反応によって前記粉体の粒子の表面に成膜処理を施す成膜工程と、を備える。 Provided by the present invention is a powder forming method for forming a film on a powder, which has a plurality of tops and a plurality of bottoms and meanders vertically in a moving direction intersecting the vertical direction. A preparatory step for preparing an apparatus main body in which a powder flow path that allows powder to flow is formed, and a powder is stored in a region of the powder flow path below the plurality of tops, and the powder is stored. A powder storage process in which the plurality of tops are partitioned by the stored powder, and the movement of the first raw material gas in one of the plurality of tops while accommodating the first raw material gas from the top. A gas accommodating step of accommodating a second raw material gas different from the first raw material gas at another top on the downstream side in the direction, and the powder flow path in the main body of the apparatus are continuous with the powder in the moving direction. By moving the powder to the first raw material gas and the second raw material gas in order, the powder is reacted by the reaction between the gas molecules of the first raw material gas and the gas molecules of the second raw material gas. It is provided with a film forming step of performing a film forming process on the surface of the particles.
 上記の方法において、前記成膜工程は、前記装置本体に対して前記移動方向および上下方向をそれぞれ含む特定方向の振動を与えることで、前記粉体を前記移動方向に移動させることを含むことが望ましい。 In the above method, the film forming step may include moving the powder in the moving direction by applying vibrations in specific directions including the moving direction and the vertical direction to the apparatus main body. desirable.
 本発明によれば、粉体を構成する粒子の表面以外での原料ガス同士の混触を抑制しつつ、粉体に連続的に成膜処理を施すことが可能な粉体成膜装置および粉体成膜方法が提供される。 According to the present invention, a powder film forming apparatus and a powder capable of continuously performing a film forming process on a powder while suppressing contact between raw material gases other than the surface of the particles constituting the powder. A film forming method is provided.

Claims (16)

  1.  粉体に成膜処理を施す粉体成膜装置であって、
     装置本体と、
     第1原料ガスを供給することが可能な第1ガス供給部と、
     前記第1原料ガスとは異なる第2原料ガスを供給することが可能な第2ガス供給部と、
     前記装置本体に設けられ、前記第1原料ガスのガス分子と前記第2原料ガスのガス分子との反応によって粉体の粒子の表面に膜を形成することが可能な少なくとも一つの成膜処理部であって、複数の頂部と複数の底部とを有し上下に蛇行しながら上下方向と交差する移動方向に粉体が流れることを許容する粉体流路が形成されている少なくとも一つの成膜処理部と、
     前記少なくとも一つの成膜処理部において前記粉体流路に沿って粉体を連続的に移動させることが可能な粉体移動機構と、
     を備え、
     前記少なくとも一つの成膜処理部は、
      前記粉体流路の前記底部をそれぞれ構成し、粉体を貯留する複数の粉体貯留部と、
      前記粉体流路の前記頂部をそれぞれ構成し、前記複数の粉体貯留部のうち隣接する粉体貯留部同士を互いに接続するとともに内部にガスを収容する複数のガス収容部であって、前記第1ガス供給部から前記第1原料ガスを受け入れ当該第1原料ガスを収容する第1ガス収容部と前記第2ガス供給部から前記第2原料ガスを受け入れ当該第2原料ガスを収容する第2ガス収容部とを少なくとも含む複数のガス収容部と、
     を有し、
     前記粉体移動機構は、粉体が前記粉体貯留部から前記ガス収容部に流入することで前記ガス収容部内のガスに曝露され、粉体が前記ガス収容部から次の粉体貯留部に流入するように、前記粉体流路において粉体を移動させ、
     前記複数の粉体貯留部は、隣接するガス収容部同士の間で前記粉体流路に沿ってガスが流れることを前記貯留する粉体によって抑止することが可能なように粉体を貯留する形状を有している、粉体成膜装置。
    A powder film forming device that applies film forming processing to powder.
    With the device body
    A first gas supply unit capable of supplying the first raw material gas and
    A second gas supply unit capable of supplying a second raw material gas different from the first raw material gas,
    At least one film forming processing unit provided on the main body of the apparatus and capable of forming a film on the surface of powder particles by the reaction between the gas molecules of the first raw material gas and the gas molecules of the second raw material gas. At least one film formation having a plurality of tops and a plurality of bottoms and forming a powder flow path that allows powder to flow in a moving direction that intersects the vertical direction while meandering vertically. Processing unit and
    A powder transfer mechanism capable of continuously moving powder along the powder flow path in the at least one film forming processing unit.
    With
    The at least one film forming processing unit is
    A plurality of powder storage portions that form the bottom of the powder flow path and store powder, and
    A plurality of gas accommodating portions constituting the tops of the powder flow paths, connecting adjacent powder accumulating portions to each other and accommodating gas inside, among the plurality of powder accommodating portions. A first gas accommodating unit that receives the first raw material gas from the first gas supply unit and stores the first raw material gas, and a second gas accommodating unit that receives the second raw material gas from the second gas supply unit and accommodates the second raw material gas. A plurality of gas accommodating parts including at least two gas accommodating parts, and
    Have,
    In the powder transfer mechanism, powder flows from the powder storage unit into the gas storage unit to be exposed to the gas in the gas storage unit, and the powder is transferred from the gas storage unit to the next powder storage unit. The powder is moved in the powder flow path so as to flow in.
    The plurality of powder storage units store powder so that the flow of gas along the powder flow path between adjacent gas storage units can be suppressed by the stored powder. A powder film forming device that has a shape.
  2.  請求項1に記載の粉体成膜装置であって、
     前記複数のガス収容部において、前記第1ガス収容部および前記第2ガス収容部は前記移動方向に沿って交互に配置されており、
     前記複数の粉体貯留部の各々は、前記第1ガス収容部および前記第2ガス収容部とそれぞれ連通している、粉体成膜装置。
    The powder film forming apparatus according to claim 1.
    In the plurality of gas accommodating portions, the first gas accommodating portion and the second gas accommodating portion are alternately arranged along the moving direction.
    A powder film forming apparatus in which each of the plurality of powder storage units communicates with the first gas storage unit and the second gas storage unit, respectively.
  3.  請求項1に記載の粉体成膜装置であって、
     前記第1原料ガスおよび前記第2原料ガスとは異なるガスであって粉体内から余剰となった第1原料ガスまたは第2原料ガスを除去するためのパージガスを供給することが可能なパージガス供給部を更に備え、
     前記複数のガス収容部において、前記第1ガス収容部および前記第2ガス収容部は前記移動方向に沿って交互に配置されており、
     前記複数のガス収容部は、前記粉体流路における粉体の流れにおいて前記第1ガス収容部と前記第2ガス収容部との間にそれぞれ配置され、前記パージガス供給部から前記パージガスを受け入れ当該パージガスを収容する複数のパージガス収容部を更に有する、粉体成膜装置。
    The powder film forming apparatus according to claim 1.
    A purge gas supply unit capable of supplying a purge gas that is different from the first raw material gas and the second raw material gas and for removing excess first raw material gas or second raw material gas from the powder. With more
    In the plurality of gas accommodating portions, the first gas accommodating portion and the second gas accommodating portion are alternately arranged along the moving direction.
    The plurality of gas accommodating portions are respectively arranged between the first gas accommodating portion and the second gas accommodating portion in the flow of powder in the powder flow path, and receive the purge gas from the purge gas supply unit. A powder film forming apparatus further comprising a plurality of purge gas accommodating portions for accommodating purge gas.
  4.  請求項3に記載の粉体成膜装置であって、
     前記パージガス収容部の圧力が、前記第1ガス収容部の圧力および前記第2ガス収容部の圧力よりも低くなるように、前記パージガス収容部の圧力を調整する圧力調整機構と、
     前記パージガス収容部から前記パージガスを排気する排気機構と、
    を更に備える、粉体成膜装置。
    The powder film forming apparatus according to claim 3.
    A pressure adjusting mechanism that adjusts the pressure of the purge gas accommodating portion so that the pressure of the purge gas accommodating portion is lower than the pressure of the first gas accommodating portion and the pressure of the second gas accommodating portion.
    An exhaust mechanism that exhausts the purge gas from the purge gas accommodating portion,
    A powder film forming apparatus further equipped with.
  5.  請求項3に記載の粉体成膜装置であって、
     前記パージガス収容部の圧力が、前記第1ガス収容部の圧力および前記第2ガス収容部の圧力よりも高くなるように、前記パージガス収容部の圧力を調整する圧力調整機構と、
     前記パージガス収容部から前記パージガスを排気する排気機構と、
    を更に備える、粉体成膜装置。
    The powder film forming apparatus according to claim 3.
    A pressure adjusting mechanism that adjusts the pressure of the purge gas accommodating portion so that the pressure of the purge gas accommodating portion becomes higher than the pressure of the first gas accommodating portion and the pressure of the second gas accommodating portion.
    An exhaust mechanism that exhausts the purge gas from the purge gas accommodating portion,
    A powder film forming apparatus further equipped with.
  6.  請求項1に記載の粉体成膜装置であって、
     前記複数のガス収容部において、前記第1ガス収容部および前記第2ガス収容部は前記移動方向に沿って交互に配置されており、
     前記複数のガス収容部は、前記粉体流路における粉体の流れにおいて前記第1ガス収容部と前記第2ガス収容部との間にそれぞれ配置される複数のダミーガス収容部を更に有し、
     前記ダミーガス収容部に接続される排気機構を更に備える、粉体成膜装置。
    The powder film forming apparatus according to claim 1.
    In the plurality of gas accommodating portions, the first gas accommodating portion and the second gas accommodating portion are alternately arranged along the moving direction.
    The plurality of gas accommodating portions further include a plurality of dummy gas accommodating portions arranged between the first gas accommodating portion and the second gas accommodating portion in the flow of powder in the powder flow path.
    A powder film forming apparatus further comprising an exhaust mechanism connected to the dummy gas accommodating portion.
  7.  請求項1乃至6の何れか1項に記載の粉体成膜装置であって、
     前記装置本体は、
      底壁と、
      前記底壁の上方に配置される天壁と、
      前記装置本体の前記天壁に前記移動方向に互いに間隔をおいて配置されかつ前記天壁から下方にそれぞれ延び前記粉体流路を画定する少なくとも3つの第1仕切部であって、前記底壁に対して所定の間隔をおいて配置される第1仕切先端部をそれぞれ有する、少なくとも3つの第1仕切部と、
      前記少なくとも3つの第1仕切部のうち前記移動方向において互いに隣接する前記第1仕切部同士の間にそれぞれ配置されるように前記装置本体の前記底壁に前記移動方向に互いに間隔をおいて配置されかつ前記底壁から上方にそれぞれ延び前記粉体流路を画定する複数の第2仕切部であって、前記天壁に対して所定の間隔をおいて配置される第2仕切先端部をそれぞれ有する、複数の第2仕切部と、
     を有し、
     前記少なくとも3つの第1仕切部のうち前記移動方向において互いに隣接する複数対の前記第1仕切部が、少なくとも前記第2仕切先端部よりも上方の部分において、前記複数のガス収容部をそれぞれ画定し、
     前記複数の第2仕切部のうちの前記移動方向において互いに隣接する少なくとも一対の前記第2仕切部が、前記第1仕切先端部を両側から挟むように前記粉体貯留部を画定する、粉体成膜装置。
    The powder film forming apparatus according to any one of claims 1 to 6.
    The device body
    With the bottom wall
    The top wall placed above the bottom wall and
    At least three first partition portions arranged on the top wall of the apparatus main body at intervals in the moving direction and extending downward from the top wall to define the powder flow path, and the bottom wall. With respect to at least three first partition portions each having first partition tips arranged at predetermined intervals.
    Of the at least three first partition portions, they are arranged on the bottom wall of the apparatus main body at intervals in the movement direction so as to be arranged between the first partition portions adjacent to each other in the movement direction. A plurality of second partition portions extending upward from the bottom wall and defining the powder flow path, and second partition tip portions arranged at predetermined intervals with respect to the top wall, respectively. With a plurality of second partitions,
    Have,
    Of the at least three first partitions, a plurality of pairs of the first partitions adjacent to each other in the moving direction define the plurality of gas accommodating portions at least in a portion above the tip of the second partition. death,
    A powder in which at least a pair of the second partition portions adjacent to each other in the moving direction of the plurality of second partition portions define the powder storage portion so as to sandwich the first partition tip portion from both sides. Film forming equipment.
  8.  請求項1乃至6の何れか1項に記載の粉体成膜装置であって、
     前記装置本体のうち前記移動方向の上流側部分よりも前記移動方向の下流側部分の方が下方に位置するように前記装置本体が傾斜して配置されている、粉体成膜装置。
    The powder film forming apparatus according to any one of claims 1 to 6.
    A powder film forming apparatus in which the apparatus main body is inclined so that the downstream portion in the moving direction is located lower than the upstream portion in the moving direction of the apparatus main body.
  9.  請求項1乃至6の何れか1項に記載の粉体成膜装置であって、
     前記少なくとも一つの成膜処理部は、複数の成膜処理部を有し、
     前記複数の成膜処理部のうちの一の成膜処理部の前記第1ガス収容部および前記第2ガス収容部を通過した粉体が、前記複数の成膜処理部のうちの他の成膜処理部の前記第1ガス収容部および前記第2ガス収容部を通過するように、前記複数の成膜処理部が互いに接続されている、粉体成膜装置。
    The powder film forming apparatus according to any one of claims 1 to 6.
    The at least one film forming processing section has a plurality of film forming processing sections.
    The powder that has passed through the first gas accommodating portion and the second gas accommodating portion of one of the plurality of film forming processing portions is formed in the other of the plurality of film forming processing portions. A powder film forming apparatus in which the plurality of film forming processing sections are connected to each other so as to pass through the first gas accommodating section and the second gas accommodating section of the film processing section.
  10.  請求項9に記載の粉体成膜装置であって、
     前記複数の成膜処理部は、前記粉体流路が上下方向に延びる中心軸周りに螺旋状に配設されるように互いに接続されている、粉体成膜装置。
    The powder film forming apparatus according to claim 9.
    A powder film forming apparatus in which the plurality of film forming processing sections are connected to each other so that the powder flow path is spirally arranged around a central axis extending in the vertical direction.
  11.  請求項1乃至6の何れか1項に記載の粉体成膜装置であって、
     粉体が前記少なくとも一つの成膜処理部のうち同じ前記第1ガス収容部および前記第2ガス収容部を繰り返し通過可能なように、前記少なくとも一つの成膜処理部の前記粉体流路のうち前記第2ガス収容部よりも前記移動方向下流側部分が当該少なくとも一つの成膜処理部の前記粉体流路のうち前記第1ガス収容部よりも前記移動方向上流側部分に連通している、粉体成膜装置。
    The powder film forming apparatus according to any one of claims 1 to 6.
    The powder flow path of the at least one film forming process so that the powder can repeatedly pass through the same first gas accommodating portion and the second gas accommodating portion of the at least one film forming process. Of these, the portion downstream of the second gas accommodating portion in the moving direction communicates with the portion of the powder flow path of the at least one film forming processing portion on the upstream side of the first gas accommodating portion in the moving direction. Yes, powder film forming equipment.
  12.  請求項1乃至6の何れか1項に記載の粉体成膜装置であって、
     前記少なくとも一つの成膜処理部の前記第1ガス収容部および前記第2ガス収容部から気体を排気する真空ポンプを更に備える、粉体成膜装置。
    The powder film forming apparatus according to any one of claims 1 to 6.
    A powder film forming apparatus further comprising a vacuum pump for exhausting gas from the first gas accommodating portion and the second gas accommodating portion of the at least one film forming processing unit.
  13.  請求項1乃至6の何れか1項に記載の粉体成膜装置であって、
     前記粉体移動機構は、前記装置本体に対して前記移動方向および上下方向をそれぞれ含む特定方向の振動を与える振動発生部を含む、粉体成膜装置。
    The powder film forming apparatus according to any one of claims 1 to 6.
    The powder transfer mechanism is a powder film forming apparatus including a vibration generating portion that gives vibrations in specific directions including the moving direction and the vertical direction to the apparatus main body.
  14.  請求項1乃至6の何れか1項に記載の粉体成膜装置であって、
     前記第1ガス供給部および前記第2ガス供給部のうちの少なくとも一方のガス供給部は、
      前記第1原料ガスまたは前記第2原料ガスを収容するガスタンクと、
      前記粉体貯留部において貯留される粉体中に配置され、前記ガスタンクから原料ガスを受け入れるとともに前記第1ガス収容部または前記第2ガス収容部に向かって前記原料ガスを噴出することが可能なガス噴出部と、
     を有する、粉体成膜装置。
    The powder film forming apparatus according to any one of claims 1 to 6.
    At least one of the first gas supply unit and the second gas supply unit has a gas supply unit.
    A gas tank accommodating the first raw material gas or the second raw material gas, and
    It is arranged in the powder stored in the powder storage unit, and can receive the raw material gas from the gas tank and eject the raw material gas toward the first gas storage unit or the second gas storage unit. Gas ejection part and
    A powder film forming apparatus having.
  15.  粉体に成膜処理を施す粉体成膜方法であって、
     複数の頂部と複数の底部とを有し上下に蛇行しながら上下方向と交差する移動方向に粉体が流れることを許容する粉体流路が形成されている装置本体を準備する準備工程と、
     前記粉体流路のうち前記複数の頂部よりも下方の領域に粉体を貯留し、当該貯留された粉体によって前記複数の頂部同士の間を仕切る、粉体貯留工程と、
     前記複数の頂部のうちの一の頂部に第1原料ガスを収容する一方、前記一の頂部よりも前記移動方向下流側の他の頂部に前記第1原料ガスとは異なる第2原料ガスを収容するガス収容工程と、
     前記装置本体において前記粉体流路に沿って前記粉体を前記移動方向に連続的に移動させることで、前記粉体を前記第1原料ガスおよび前記第2原料ガスに順に曝露させ、前記第1原料ガスのガス分子と前記第2原料ガスのガス分子との反応によって前記粉体の粒子の表面に成膜処理を施す成膜工程と、
     を備える粉体成膜方法。
    This is a powder film forming method that applies a film forming process to powder.
    A preparatory step for preparing an apparatus main body having a plurality of tops and a plurality of bottoms and having a powder flow path forming a powder flow path that allows powder to flow in a moving direction that intersects the vertical direction while meandering vertically.
    A powder storage step of storing powder in a region of the powder flow path below the plurality of tops and partitioning the plurality of tops by the stored powder.
    The first raw material gas is housed in one of the plurality of tops, while the second raw material gas different from the first raw material gas is housed in the other top on the downstream side in the moving direction from the one top. Gas storage process and
    By continuously moving the powder in the moving direction along the powder flow path in the apparatus main body, the powder is exposed to the first raw material gas and the second raw material gas in order, and the first A film forming step of forming a film on the surface of the powder particles by the reaction between the gas molecule of the first raw material gas and the gas molecule of the second raw material gas.
    A powder film forming method comprising.
  16.  請求項15に記載の粉体成膜方法であって、
     前記成膜工程は、前記装置本体に対して前記移動方向および上下方向をそれぞれ含む特定方向の振動を与えることで、前記粉体を前記移動方向に移動させることを含む、粉体成膜方法。
    The powder film forming method according to claim 15.
    The film forming step is a powder forming method including moving the powder in the moving direction by applying vibrations in specific directions including the moving direction and the vertical direction to the apparatus main body.
PCT/JP2021/005227 2020-03-12 2021-02-12 Powder film forming device and powder film forming method WO2021182010A1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62125821A (en) * 1985-11-26 1987-06-08 Japan Steel Works Ltd:The Treating apparatus for gas
US4925632A (en) * 1988-01-29 1990-05-15 Thacker Milton B Low profile fluid catalytic cracking apparatus
JPH05504600A (en) * 1989-08-01 1993-07-15 ジーティーイー プロダクツ コーポレイション Method and apparatus for coating small solids
JP2019530798A (en) * 2016-09-16 2019-10-24 ピコサン オーワイPicosun Oy Particle coating by atomic layer deposition (ALD)

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62125821A (en) * 1985-11-26 1987-06-08 Japan Steel Works Ltd:The Treating apparatus for gas
US4925632A (en) * 1988-01-29 1990-05-15 Thacker Milton B Low profile fluid catalytic cracking apparatus
JPH05504600A (en) * 1989-08-01 1993-07-15 ジーティーイー プロダクツ コーポレイション Method and apparatus for coating small solids
JP2019530798A (en) * 2016-09-16 2019-10-24 ピコサン オーワイPicosun Oy Particle coating by atomic layer deposition (ALD)

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