Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/01—Manufacture or treatment
  • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
  • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
  • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/02—Pretreatment of the material to be coated
  • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
  • C23C16/029—Graded interfaces
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
  • C23C16/34—Nitrides
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
  • C30B25/02—Epitaxial-layer growth
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
  • C30B29/10—Inorganic compounds or compositions
  • C30B29/38—Nitrides
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/01—Manufacture or treatment
  • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
  • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
  • H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
  • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
  • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/80—Constructional details
  • H10N30/85—Piezoelectric or electrostrictive active materials
  • H10N30/853—Ceramic compositions
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
  • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
  • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
  • H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
  • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
  • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks

Definitions

• the present invention relates generally to electronic devices. More particularly, the present invention provides methods of forming Sc x Ali- x N films for use as, for example, piezoelectric layers in bulk acoustic wave resonator devices and RF devices (such as HEMTs) etc.
• Figure 1 is a schematic diagram of a Metal Organic Chemical Vapor Deposition (MOCVD) system that can be used to form Sc x Ali- x N films in some embodiments according to the invention.
• MOCVD Metal Organic Chemical Vapor Deposition
• Figures 2A-2D are EEFS images of a Sc x Ah- x N film including a composite EEFS image, a Sc EEFS image, a N EELS image, and an A1 EELS image, respectively, formed using CVD at a relatively high temperature of about 1150 degrees Centigrade.
• Figure 2E is a TEM image of a Sc x Ah- x N film formed at a temperature less than about 750 degrees Centigrade.
• Figures 3A-3D are EELS images of a Sc x Ah- x N film including a composite EELS image, a Sc EELS image, a N EELS image, and an A1 EELS image, respectively, formed using CVD at a temperature about 850 of degrees Centigrade in some embodiments according to the invention.
• Figure 4A shows XRD scans of Sc x Ah- x N films formed using CVD at temperatures of about (a) 1030 degrees Centigrade, (b) 940 degrees Centigrade, and (c) 850 degrees Centigrade in some embodiments according to the invention.
• Figure 4B is an EELS image of a Sc x Ali- x N film grown on an AlGaN/AIN sequence of layers using a MOCVD process according to embodiments of the present invention.
• Figure 5 is an SEM image of 20% Sc x Ali- x N formed using ScarletTM as a precursor.
• Figure 6 is a graph showing SIMS analysis of Sc x Ali- x N (14.3% Sc) where the
• Sc x Ali- x N layer of interest is located about 0.1 microns to about 0.4 microns deep in the sample in some embodiments according to the invention.
• Figures 7-9 are cross-sectional illustrations of Sc x Ali- x N films formed on a substrate in some embodiments according to the present invention.
• Figure 10 is a cross-sectional illustration of a Sc x Ali- x N film providing a single crystal piezoelectric resonator layer sandwiched between a bottom electrode and a top electrode in some embodiments according to the present invention.
• Figure 11 is a cross-sectional illustration of the Sc x Ali- x N film formed according to embodiments of the invention and included as a barrier layer in a material stack of a HEMT device configured for RF operation in some embodiments.
• Figure 12 is a schematic illustration of a HEMT device including a Sc x Ali- x N layer formed according to embodiments of the invention.
• FIG. 13 is a cross-sectional schematic illustration of a monolithic RF Bulk Acoustic Wave (BAW) piezoelectric resonator device integrated with a HEMT device, where the Sc x Ali- X N layer is a shared Sc x Ah- x N layer providing the piezoelectric layer in the piezoelectric resonator device and the buffer layer in the HEMT device in some embodiments according to the present invention.
• BAW Bulk Acoustic Wave
• Figures 14 - 19 illustrate various RF devices that can include a Sc x Ah- x N layer as any of a piezoelectric layer of the resonator device, the buffer layer of the HEMT device, and as the barrier layer of the HEMT device in some embodiments.
• Figure 20 is a block diagram that illustrates an example of a computing system that may be used to monitor and control operations (including maintaining the temperature of the CVD reactor as described herein) at of the MOCVD system 100 in some embodiments according to the invention.
• Embodiments according to the invention can provide methods of forming films including scandium at low temperatures using chemical vapor deposition to provide piezoelectric resonator devices and/or high electron mobility transistor devices.
• a method of forming a film can include heating a CVD reactor chamber containing a substrate to a temperature range between about 750 degrees Centigrade and about 950 degrees Centigrade, providing a first precursor comprising A1 to the CVD reactor chamber in the temperature range, providing a second precursor comprising Sc to the CVD reactor chamber in the temperature range, providing a third precursor comprising nitrogen to the CVD reactor chamber in the temperature range, and forming the film comprising ScxAll-xN on the substrate.
• Sc x Ali- x N films can be formed using Chemical Vapor Deposition (CVD) at relatively low temperature so that the resulting films can be substantially free of segregation so that, for example, the Sc x Ali- x N films can have a uniform wurtzite crystal structure.
• the CVD process can be performed at relatively low temperature, which can improve the surface morphology of the Sc x Ali- x N film.
• the CVD growth process to form the Sc x Ali- x N can be performed in a temperature range between about 750 degrees Centigrade and about 950 degrees Centigrade.
• a Sc x Ali- x N film formed at higher temperatures can exhibit segregation where the composition of the film can vary such that some portions can be rich in Sc and other portions can be rich in Al.
• the CVD growth process is performed at too low a temperature, the wurtzite crystal structure may be difficult to maintain, resulting in an amorphous Sc x Ah- x N film with Al and Sc evenly distributed throughout.
• the morphology of the Sc x Ali- x N film can be improved by the use of a Sc precursor that can be characterized as containing both cyclopentadienyl ligands and amidinate ligands.
• a Sc precursor that can be characterized as containing both cyclopentadienyl ligands and amidinate ligands.
• the presence of amidinate ligands can allow for greater adatom mobility of a growth surface and more complete disassociation of the molecule, which can produce films with smoother surfaces at lower growth temperature than other precursors.
• the Sc precursor can be characterized as containing amidinate ligands where there is one N atom for each outer shell electron of the Sc.
• the A1 precursor can be a metalorganic containing A1 as a component, such as trimethylaluminum or triethylaluminum.
• Other metalorganic precursors containing A1 can also be used in some embodiments according to the invention.
• the film morphology can also be improved by controlling the ratio of the Group V (e.g ., a precursor comprising nitrogen, such as NH3) precursor to the Group III precursors (e.g., Sc and A1 precursors) used during the CVD growth process.
• the ratio can affect the adatom mobility of the Group-Ill species on the growth surface. In particular, if the ratio is too high the film may roughen, whereas if the ratio is too low, the Sc adatoms may accumulate and cause Sc/Al segregation in the film.
• an underlying nucleation layer can also help improve the morphology of the Sc x Ali- x N film.
• the Sc x Ah- x N film can also be formed to have a low-carbon content.
• the CVD process can be used to form Sc x Ali- x N films having an impurity incorporation that is less than about 10 19 /cm 3 or less than about 0.001% of the material.
• the Sc x Ah- x N film can also have low concentrations of Oxygen and/or Silicon.
• the CVD grown Sc x Ali- x N films described herein can be used as used as piezoelectric resonator layers in, for example, Bulk Acoustic Wave (BAW) based resonators or filter circuits.
• the CVD grown Sc x Ali- x N films described herein can be used as the barrier layer in a High Electron Mobility Transistor (HEMT) device operating at, for example at RF frequencies.
• the CVD grown Sc x Ali- x N films described herein can be a shared layer that provides both a piezoelectric resonator layer and a buffer layer of the HEMT device.
• FIG. 1 is a schematic diagram of a Metal Organic Chemical Vapor Deposition (MOCVD) system 100 that can be used to form Sc x Ali- x N films in some embodiments according to the invention.
• the MOCVD system 100 can include a horizontal flow CVD reactor 105 supplied with a low vapor pressure MO precursor vapor 109 routed to the CVD reactor 105 from a vessel 125 in some embodiments according to the invention.
• the CVD reactor 105 can include an upper portion 150 and a lower portion 155 that are moveably coupled together. In operation, the upper portion 150 can separate from the lower portion 155 to expose a planetary wafer transport system so that wafers may be loaded into a plurality of wafer stations.
• the vessel 125 contains the Sc precursor material used to generate the low vapor pressure MO precursor vapor 109 for formation of the Sc x Ali- x N film. It will be understood that other types of CVD reactors can be used in place of the horizontal flow CVD reactor 105.
• a central injector column 145 penetrates the upper portion 150 of the reactor 105 and is coupled to separate lines configured to carry different precursors into the CVD reactor 105.
• the central injector column 145 is coupled to a low vapor pressure MO precursor line 115 that carries the low vapor pressure MO precursor vapor 109.
• the low vapor pressure MO precursor vapor 109 can be provided to the reactor 105 under control of a processor circuit 101.
• the MOCVD system 100 operates under the control of the processor circuit 101 to maintain the temperature of the interior of the reactor 105 at a temperature at which the Sc x Ali- x N film is formed on the substrate.
• the interior of the reactor 105 can be maintained at a temperature in a range, for example, between about 750 degrees Centigrade and about 950 degrees Centigrade during formation of the Sc x Ali- x N film.
• the processor circuit 101 may also heat the line 115 so that the precursor vapor 109 can be provided to the reactor 105 at a temperature in a range, for example, between more than 70 degrees Centigrade to about 200 degrees Centigrade.
• other precursors 120 such as the precursors of A1 and N, can also be provided to the central injector column 145 via a path 160 that can be separated from the line 115.
• the other precursors can include other metal organic precursors as wells as hydrides.
• the path 160 and the line 115 may be located to be thermally isolated from one another so that the Sc precursor vapor 109 can be delivered to the central injector column 145 without substantially affecting the temperature of the other precursors 120.
• the line 115 can be located so that the vapor 109 can be heated without substantially heating the other precursors 120.
• the ScAIN films described herein can be formed using an MOCVD system where the Sc x Ali- x N, as described in, U.S. Patent Application Serial No. 16/784,843, entitled Apparatus For Forming Single Crystal Piezoelectric Layers Using Low- Vapor Pressure Metalorganic Precursors in CVD Systems And Methods of Forming Single Crystal Piezoelectric Layers Using The Same, filed in the USPTO on 02/07/2020 which is commonly assigned to the present assignee, the entirety of which is hereby incorporated herein by reference.
• the MOCVD system 100 can be used to form Sc x Ali- x N films at relatively low temperature on a substrate.
• the interior of the CVD reactor 105 can be maintained at a temperature in a range between about 750 degrees Centigrade to about 950 degrees Centigrade.
• a Sc x Ali- x N film that is formed at higher temperatures may exhibit segregation where the composition of the film varies in that that some portions can be rich in Sc and other portions are rich in Al.
• Figures 2A-2D are EELS images of a Sc x Ali- x N film formed using CVD at a temperature of about 1150 degrees Centigrade.
• Sc x Ali- x N films grown using CVD at temperature greater than 950 degrees Centigrade begin to exhibit Si-rich composition and Al-rich composition, respectively.
• the desired wurtzite crystal structure of Sc x Ah- x N proves difficult to maintain in films grown using CVD at temperatures less than about 750 degrees Centigrade, as shown in Figure 2E.
• Figure 2E is a TEM image of a Sc x Ah- x N (or Ah- x Sc x N) film formed at a temperature less than about 750 degrees Centigrade.
• the ScAIN film on the AlGaN layer is amorphous, which demonstrates the difficulty in providing a wurtzite crystal structure for the Sc x Ali- x N (or Ali- x Sc x N) film formed via MOCVD at temperatures less than about 750, as appreciated by the present inventors.
• Figures 3A-3D are EELS images of a Sc x Ali- x N film including a composite EELS image, a Sc EELS image, a N EELS image, and an Al EELS image, respectively, formed using CVD at a temperature of about 850 degrees Centigrade in some embodiments according to the invention.
• the Sc x Ali- x N film grown using CVD at a temperature of about 850 degrees Centigrade does not exhibit Si-rich or Al-rich composition. Instead, the Sc x Ah- x N film exhibits a substantially uniform composition such that the Sc-rich and Al-rich portions shown in Figures 2A-2D are substantially eliminated.
• an XRD scan of a sample a Sc x Ali- x N film formed as described herein in some embodiments according to the invention demonstrates the substantially uniform composition of the wurtzite crystalline structures in the Sc x Ah- x N film shown in Figures 3A-3D.
• Figure 4A shows 2theta-omega scans in an X-Ray diffractometer (XRD) of Sc x Ali- x N films formed using CVD at temperatures of about (a) 1030 degrees Centigrade, (b) 940 degrees Centigrade, and (c) 850 degrees Centigrade in some embodiments according to the invention.
• the peak at about 34.5 in film formed at about 1030 degrees Centigrade shown in scan (a) represents segregated Sc
• the Sc x Ali- x N films formed at about 940 degrees Centigrade and about 850 degrees Centigrade shown in scans (b) and (c) respectively have lesser peaks that illustrate substantially uniform composition of the corresponding Sc x Ali- x N film (relative to scan (a)) such that the films (b) and (c) are substantially free of segregated ScN crystal structures (e.g rock salt crystalline structures) as indicated by a Sc peak count at about 34.5 degrees in an XRD 2Theta scan that is less than 5% of the Sc peak count at about 36 degrees taken relative to the 110 crystal plane.
• Figure 4B is an EELS image of a ScAIN (or AlScN) layer grown on an AlGaN/AIN sequence of layers using the MOCVD process according to embodiments of the present invention.
• the ScAIN layer was grown using the MOCVD process at a temperature of about 800 degrees Centigrade.
• the scan shows that the corresponding portions of the ScAIN layer and the AlGaN layer have substantially uniform composition of wurtzite crystalline structures.
• the morphology of the Sc x Ali- x N film can be improved by the use of a Sc precursor that can be characterized as containing both cyclopentadienyl ligands and amidinate ligands.
• a Sc precursor that can be characterized as containing both cyclopentadienyl ligands and amidinate ligands.
• the presence of amidinate ligands can allow for greater adatom mobility of the growth surface and more complete disassociation of the molecule, which can produce smoother films at lower growth temperature than other precursors.
• the Sc precursor can be characterized as containing amidinate ligands where there is one N atom for each outer shell electron of the Sc.
• the precursor can be a Scandium-containing precursor with diisopropylformamidinate ligands, without methyl cyclopentadienyl ligands.
• the precursor can be a Scandium-containing precursor with diisopropylforamidinate ligands and with methyl cyclopentadienyl ligands.
• Lanthanide-containing precursors for example, with diisopropylforamidinate ligands and with methyl cyclopentadienyl ligands, are described in U.S. Patent No. U.S. 8,283,201, the entirety of which is hereby incorporated herein by reference.
• Another example, of a Scandium-containing precursor with diisopropylforamidinate ligands and with methyl cyclopentadienyl ligands is marketed by Air Liquide S.A.
• Pigure 5 is an SEM image of 20% ScAIN film formed using ScarletTM as a precursors
• the precursor provided by the vessel 125 in Pigure 1 can be provided by a precursor characterized by the general formula (2):
• R 1 is H or a C 1- C 5 alkyl chain
• R 2 is H or a C 1- C 5 alkyl chain
• R 3 is H or Me
• A is 0, 1, or 2
• there is one N atom for each outer shell electron of the Sc when A 0.
• R 1 of the precursor is Me, Et, or iPr.
• R 2 of the precursor is iPr or tBu.
• the precursor can be a Scandium-containing precursor with dialkylformamidinate ligands or dialkylacetamidinate ligands, and alkyl cyclopentadienyl ligands, and/or a Scandium-containing precursor with dialkylformamidinate ligands or acetamidinate ligands, without alkyl cyclopentadienyl ligands.
• Lanthanide-containing precursors, for example, with dialkylforamidinate ligands and with alkyl cyclopentadienyl ligands, are described in U.S. Patent No. U.S. 8,283,201, the entirety of which is hereby incorporated herein by reference.
• ScAIN films according to the present invention can be formed using MOCVD with a Sc precursor characterizes by general formula (1) at a CVD reactor temperature between about 750 degrees Centigrade to about 950 degrees Centigrade.
• ScAIN films according to the present invention can be formed using MOCVD with a Sc precursor characterized by general formulae (1) at a CVD reactor temperature outside the temperature range of about 750 degrees Centigrade to about 950 degrees Centigrade.
• Sc x Ali- x N film formed using MOCVD at relatively low temperatures can also exhibit low-carbon content.
• the Sc x Ah- x N film can be formed on the substrate via the MOCVD process while the reactor is maintained at a temperature in the range of about 750 degrees Centigrade to about 950 degrees Centigrade to form the Sc x Ali- x N films having an impurity incorporation that is less than about 10 19 /cm 3 or less than about 0.001% of the material.
• the ScAIN film can also have low concentrations of Oxygen and/or Silicon.
• Figure 6 is a graph showing SIMS analysis of Sc x Ali- x N (14.3% Sc) where the Sc x Ali- x N layer of interest is located about 0.1 microns to about 0.4 microns deep in the analyzed sample as indicated on the x-axis of the graph in some embodiments according to the invention.
• the Carbon concentration in the ScAIN film formed according to the present invention at the pertinent depth is less than 10 19 /cm 3 .
• embodiments according to the present invention can be used to form ScAIN films with Carbon concentrations less than 10 19 /cm 3 .
• the Oxygen and Si concentrations in the Sc x Ali- X N film formed according to the present invention at the pertinent depth may also be relatively low.
• Sc x Ah- x N films having Carbon concentration less than about 10 19 /cm 3 can be formed using MOCVD with a Sc precursor characterizes by general formulae (1) or (2) and the other embodiments described above.
• ScAIN films having Carbon concentration less than about 10 19 /cm 3 can be formed using a Sc precursor including (DIPA)3Sc.
• Sc x Ali- x N films having Carbon concentration less than about 10 19 /cm 3 can be formed using MOCVD with any of the Sc precursors described above while the CVD reactor temperature is maintained between about 750 degrees Centigrade to about 950 degrees Centigrade during formation of the Sc AIN film on the substrate.
• Sc AIN films according to the present invention can be formed using MOCVD with any of the Sc precursors described above while the CVD reactor temperature is maintained outside the temperature range of about 750 degrees Centigrade to about 950 degrees Centigrade during formation of the ScAIN film on the substrate.
• the Sc x Ali- x N film morphology can also be improved by controlling the ratio of the Group V (e.g., a precursor comprising nitrogen, such as NH3) precursor to the Group III precursors (e.g, the Sc and A1 precursors) used during the CVD growth process.
• the ratio of amount of the precursor including nitrogen to the combined amounts of the Sc precursor (such as the precursor characterized by general formulae (1) or the related embodiments, (DIPA)3Sc or the like) combined with the A1 precursor is in a range between about, for example, 20,000 and about 500. In some embodiments, the range is between about 10,000 and about 500. In some embodiments, the range is between about 3000 and about 500.
• Figure 7 is a cross-sectional illustration of a Sc x Ali- x N film 710 formed on a substrate 705 in some embodiments according to the present invention.
• the substrate 705 can be Si (such as Sid 11>), SiC, AI2O3, AIN, or GaN.
• the ScAIN film 710 can be formed using the MOCVD process to include Sc in a range of concentrations from about 10% to about 42% where the concentration of Sc is given as x in Sc x Ah- x N in some embodiments according to the invention.
• the concentration of Sc in the Sc x Ali- x N film 710 can be formed at a level sufficient to induce a stress in the Sc x Ali- x N layer in a range between about 200MPa compressive stress and about 200MPa tensile stress when formed on the substrate 705. It will be understood that the Sc x Ali- x N film 710 can be formed on the substrate 705 using any combination of the different embodiments of precursors, materials, etc. described herein for use as part of the MOCVD process within the temperature ranges described herein. [0042]
• Figure 8 is a cross-sectional illustration of a Sc x Ali- x N film 810 formed on a substrate 705 in some embodiments according to the present invention.
• a nucleation layer 815 can first be formed on the substrate 705.
• the Sc x Ah- x N film 810 can be formed on the nucleation layer 815 using the MOCVD process to include Sc in a range of concentrations from about 10% to about 42% where the concentration of Sc is given as x in Sc x Ali- x N in some embodiments according to the invention.
• the nucleation layer 815 can be formed so that components thereof are changed as the layer is formed to provide a desired lattice structure or strain to the Sc x Ah- x N film 810 formed thereon.
• the amount of A1 may be reduced as the nucleation layer 815 is deposited so that the nucleation layer 815 may be essentially AIN at the outset and transition to GaN at the upper portions of the nucleation layer 815 where the Sc x Ali- x N film 810 is formed. Accordingly, a nucleation layer so formed could result in a lattice match for Sc . 1sAl . 82N (Sc 18%) or apply a compressive strain to a Sc x Ah- x N film for Sc where x is greater than 18%.
• the concentration of Sc in the Sc x Ali- x N film 810 can be formed at a level sufficient, in combination with the nucleation layer 815, to induce a stress in the Sc x Ali- x N layer in a range between about 200MPa compressive stress and about 200MPa tensile stress when formed on the substrate 705. It will be understood that the Sc x Ah- x N film 810 can be formed on the nucleation layer 815 using any combination of the different embodiments of precursors, materials, etc. described herein for use as part of the MOCVD process within the temperature ranges described herein.
• FIG. 9 is a cross-sectional illustration of a ScAIN film 910 formed on a substrate 705 in some embodiments according to the present invention.
• the ScAIN film 910 can include a plurality of component ScAIN films 915-1 to N where each of the component Sc x Ali- x N films can be formed using the MOCVD process to include Sc in a range of concentrations from about 10% to about 42% where the concentration of Sc is given as x in Sc x Ali- x N in some embodiments according to the invention.
• the concentration of Sc in the Sc x Ah- x N film 910 can be formed at a level sufficient to induce a stress in the Sc x Ali- x N layer in a range between about 200MPa compressive stress and about 200MPa tensile stress when formed on the substrate 705. It will be understood that the ScAIN film 910 can be formed on the substrate 705 using any combination of the different embodiments of precursors, materials, etc. described herein for use as part of the MOCVD process within the temperature ranges described herein.
• the Sc x Ali- x N films formed according to embodiments of the invention can be included as single crystal piezoelectric films in resonator or filter circuits.
• the Sc x Ali- x N films described herein can be included in devices such as that shown in Figure 10, to provide the single crystal resonator Sc x Ali- x N layer 110 sandwiched between a bottom electrode 135 and a top electrode 140.
• the bottom electrode 135 is separated from the substrate by a resonator cavity 145 that allows the portion of the Sc x Ali- x N layer 110 that is located between the top and bottom electrodes 135 and 140 to resonate responsive to electromagnetic energy impinging on that portion of the Sc x Ali- x N layer 110 to create an electrical response at the top and bottom electrodes 135 and 140.
• the resonator cavity 145 also allows the portion of the Sc x Ali- x N layer 110 that is located between the top and bottom electrodes 135 and 140 to resonate responsive to an electrical signal applied across the top and bottom electrodes 135 and 140. Further, the resonance of the Sc x Ali- x N layer 110 can be affected by the level of Sc included in the shared Sc x Ah- x N layer 110.
• the MOCVD processes described herein can allow the Sc x Ah- x N layer 110 to be formed to have a single crystal structure as described herein so that the composition of the Sc x Ali- x N layer 110 has a composition that is free of segregated ScN crystalline structures to have a substantially uniform wurtzite crystal structure.
• the Sc x Ah- x N layer 110 can be made with a crystallinity of less than about 1.5 degrees Full Width Half Maximum (FWHM) by x-ray diffraction.
• the co-doped Group III-N piezoelectric material can be made with a crystallinity of less than about 1.0 degree at Full Width Half Maximum (FWHM) to about 10 arcseconds at FWHM measured using X-ray diffraction (XRD).
• the Sc x Ah- x N layer 110 can be made with a crystallinity in a range between about 1.0 degree at Full Width Half Maximum (FWHM) to about 0.05 degrees at FWHM measured in the 002 direction using XRD.
• the Sc x Ali- x N layer 110 can have a thickness of about 200nm to about 1.3 microns.
• Methods of forming a piezoelectric resonator device according to embodiments to the present invention using the MOCVD processes described herein can take advantage of a transfer process by forming the Sc x Ah- x N layer (and portions which underlie the Sc x Ali- x N layer) on a growth substrate. The entire structure can then be transferred to a carrier substrate (such as Si ⁇ 100>) so that the growth substrate (on which the piezoelectric layer was grown) can be removed. Once the growth substrate is removed, the exposed backside of the piezoelectric layer can be processed to form, for example, a top electrode (for the resonator) and to form vias and contacts. Accordingly, the transfer process can allow both sides of the resonator device to be utilized.
• a carrier substrate such as Si ⁇ 100>
• the Sc x Ali- x N film 110 can be formed according to embodiments of the invention for inclusion as a barrier layer in a HEMT device that can be configured for RF operation in some embodiments as illustrated in Figure 11.
• the Sc x Ah- x N film 110 is included as the barrier layer 125 of the HEMT device as part of a stack of materials that can form the active layers of the HEMT device, including a III-N channel layer 120, a buffer layer 111-135 and an optional cap layer .
• the HEMT stack of materials and the Sc x Ali- x N layer 125 can be grown on the substrate using the MOCVD processes described herein (including by use of any combination of the aspects described herein).
• the material in the HEMT stack can be formed via MOCVD without a vacuum break being introduced during formation of the HEMT stack of materials and the Sc x Ali- x N layer 125.
• the process can continue until formation of the HEMT stack of materials is complete before the temperature is allowed to cool-down.
• the Sc x Ali- x N layer formed to provide the barrier layer 125 of the HEMT device can be formed to a thickness in a range between about 5nm and about 20nm in some embodiments according to the present invention.
• FIG 12 is a schematic illustration of a HEMT device including the Sc x Ali- x N layer 125described in Figure 11 and formed according to embodiments of the present invention.
• the HEMT device includes a source region 175, a drain region 180, and a gate 185.
• Respective metallizations 190 and 195 extend from the source region 175 and the drain region 180 off the source and drain regions in the HEMT stack to respective contacts.
• FIG. 13 is a cross-sectional schematic illustration of a monolithic RF Bulk Acoustic Wave (BAW) piezoelectric resonator device 105 integrated with a HEMT device 103 (shown inverted) including a shared Sc x Ali- x N layer 110 providing the piezoelectric layer in the piezoelectric resonator device 105 and the buffer layer in the HEMT device 103 in some embodiments according to the present invention.
• the shared Sc x Ali- x N layer 110 extends across the monolithic carrier substrate to provide the piezoelectric layer of the resonator device 105 and the buffer layer of the HEMT device 103.
• the HEMT device 103 includes the HEMT stack of materials that form the active layers of the HEMT device 103 as described in Figure 11, including a III-N channel layer, a barrier layer (that can also be formed of Sc x Ali- x N at the same or different composition as the buffer layer), and an optional cap layer.
• the HEMT stack of materials and the shared Sc x Ali- x N layer 110 can be grown on the carrier substrate using the MOCVD processes described (and using an y combination of the aspects described herein) without a vacuum break being introduced during formation of the HEMT stack of materials and the shared Sc x Ali- x N layer 110.
• the different portions of the shared Sc x Ali- x N layer 110 (the HEMT portion and the resonator portion) can each be formed to the respective thickness that is described for each of those portions herein in some embodiments according to the present invention.
• Figures 14 - 19 illustrate various RF devices that can include the Sc x Ah- x N layers to provide both the piezoelectric layer of the resonator device and/the buffer layer of the HEMT device, only the barrier layer of the HEMT device, or only the piezoelectric layer of the resonator device in some embodiments. Other combintions are also possible within the scope of the present invention.
• Figure 14 is a schematic illustration of a Transmit Module 4900 that includes a BAW filter 4910, an amplifier 4915, implemented using at least one HEMT device, and a switch 4805, implemented using at least one HEMT device assembled in an integrated form factor as described herein in some embodiments according to the present invention.
• FIG. 15 is a schematic illustration of a Partial Complete Front End Module (CFE) High Band device 5000 that includes a BAW filter 5010, an amplifier 5015, implemented using at least one HEMT device, and a switch 5005, implemented using at least one HEMT device assembled in an integrated form factor as described herein in some embodiments according to the present invention.
• CFE Partial Complete Front End Module
• FIG 16 is a schematic illustration of a switched duplexer bank 5100 that includes at least one BAW filter 5110 and at least one switch 5105 (implemented using at least one HEMT device, such as a bypass switch or a multi-throw switch, assembled in an integrated form factor in some embodiments according to the present invention.
• at least one BAW filter 5110 and at least one switch 5105 (implemented using at least one HEMT device, such as a bypass switch or a multi-throw switch, assembled in an integrated form factor in some embodiments according to the present invention.
• HEMT device such as a bypass switch or a multi-throw switch
• FIG 17 is a schematic illustration of an antenna switch module 5200 that includes at least one BAW filter 5210 and at least one switch 5205 (implemented using at least one HEMT device, such as a bypass switch or a multi-throw switch, assembled in an integrated form factor in some embodiments according to the present invention.
• at least one BAW filter 5210 and at least one switch 5205 (implemented using at least one HEMT device, such as a bypass switch or a multi-throw switch, assembled in an integrated form factor in some embodiments according to the present invention.
• HEMT device such as a bypass switch or a multi-throw switch
• Figure 18 is a schematic illustration of a Diversity receive FEM 5300 that includes at least one Low Noise Amplifier 5315, implemented using at least one HEMT device, at least one BAW filter 5310, and at least one switch 5305, implemented using at least one HEMT device, assembled in an integrated form factor in some embodiments according to the present invention.
• Figure 19 is a schematic illustration of a Power Amplifier (PA) Duplexer 5400 that includes at least one Power Amplifier 5415 implemented using at least one HEMT device and at least one BAW filter 5410 assembled in an integrated form factor in some embodiments according to the present invention.
• PA Power Amplifier
• FIG. 14-19 may include ScAIN as the barrier layer of the HEMT device, ScAIN as the piezoelectric layer of the resonator device or ScAIN as a shared buffer/piezoelectric layer as described herein.
• Figure 20 is a block diagram that illustrates an example of a computing system that may be used to monitor and control operations (including maintaining the temperature of the CVD reactor as described herein) at of the MOCVD system 100 in some embodiments according to the invention using a processor circuit 101 having a host or master computer and one or more remote computers.
• This operating environment is only one example of a suitable operating environment, however, and is not intended to suggest any limitation as to the scope of use or functionality of the disclosed technology.
• the processor circuit 101 includes a master computer 103.
• the master computer 103 is a multi-processor computer that includes a plurality of input and output devices 105 and a memory 107.
• the input and output devices 105 may include any device for receiving input data from or providing output data to a user.
• the input devices may include, for example, a keyboard, microphone, scanner or pointing device for receiving input from a user.
• the output devices may then include a display monitor, speaker, printer or tactile feedback device.
• the memory 107 may similarly be implemented using any combination of computer readable media that can be accessed by the master computer 103.
• the computer readable media may include, for example, microcircuit memory devices such as read-write memory (RAM), read-only memory (ROM), electronically erasable and programmable read-only memory (EEPROM) or flash memory microcircuit devices, CD-ROM disks, digital video disks (DVD), or other optical storage devices.
• the computer readable media may also include magnetic cassettes, magnetic tapes, magnetic disks or other magnetic storage devices, punched media, holographic storage devices, or any other medium that can be used to store desired information.
• the master computer 103 runs a software application for performing the operations according to various examples of the disclosed technology.
• the memory 107 stores software instructions 109A that, when executed, will implement a software application for performing one or more operations.
• the memory 107 also stores data 109B to be used with the software application.
• the data 109B contains process data that the software application uses to perform the operations, at least some of which may be parallel.
• the master computer 103 also includes a plurality of processor units 111 and an interface device 113.
• the processor units 111 may be any type of processor device that can be programmed to execute the software instructions 109A, but will conventionally be a microprocessor device.
• one or more of the processor units 111 may be a commercially generic programmable microprocessor, such as Intel. Pentium or Xeon microprocessors, Advanced Micro Devices Athlon. TM. microprocessors or Motorola 68K/Coldfire. microprocessors.
• one or more of the processor units 111 may be a custom-manufactured processor, such as a microprocessor designed to optimally perform specific types of mathematical operations.
• the master computing device 103 may employ one or more processing units 111 having more than one processor core.
• Figure 20 illustrates an example of a multi-core processor unit 111 that may be employed with various embodiments of the disclosed technology.
• the processor unit 111 includes a plurality of processor cores 201.
• Each processor core 201 includes a computing engine 203 and a memory cache 205.
• Each processor core 201 is connected to an interconnect 207.
• the particular construction of the interconnect 207 may vary depending upon the architecture of the processor unit 111.
• the interconnect 207 may be implemented as an interconnect bus.
• the interconnect 207 may be implemented as a system request interface device.
• the processor cores 201 communicate through the interconnect 207 with an input/output interface 209 and a memory controller 210.
• the input/output interface 209 provides a communication interface between the processor unit 111 and the bus 115.
• the memory controller 210 controls the exchange of information between the processor unit 111 and the system memory 107.
• the processor units 111 may include additional components, such as a high-level cache memory accessible shared by the processor cores 201.
• the interface device 113 allows the master computer 103 to communicate with the servant computers 117A, 117B, 117C . . . 117x through a communication interface.
• the communication interface may be any suitable type of interface including, for example, a conventional wired network connection or an optically transmissive wired network connection.
• the communication interface may also be a wireless connection, such as a wireless optical connection, a radio frequency connection, an infrared connection, or even an acoustic connection.
• the interface device 113 translates data and control signals from the master computer 103 and each of the servant computers 117 into network messages according to one or more communication protocols, such as the transmission control protocol (TCP), the user datagram protocol (UDP), and the Internet protocol (IP).
• TCP transmission control protocol
• UDP user datagram protocol
• IP Internet protocol
• Each computer 117 may include a memory 119, a processor unit 121, an interface device 123, and, optionally, one more input/output devices 125 connected together by a system bus 127.
• the optional input/output devices 125 for the computers 117 may include any conventional input or output devices, such as keyboards, pointing devices, microphones, display monitors, speakers, and printers.
• the processor units 121 may be any type of conventional or custom-manufactured programmable processor device.
• one or more of the processor units 121 may be commercially generic programmable microprocessors, such as Intel. RTM. Pentium.RTM. or Xeon.TM.
• the processor units 121 may be custom-manufactured processors, such as microprocessors designed to optimally perform specific types of mathematical operations.
• the memory 119 then may be implemented using any combination of the computer readable media discussed above.
• the interface devices 123 allow the computers 117 to communicate with the master computer 103 over the communication interface.
• the master computer 103 is a multi-processor unit computer with multiple processor units 111, while each computer 117 has a single processor unit 121. It should be noted, however, that alternate implementations of the disclosed technology may employ a master computer having single processor unit 111. Further, one or more of the computers 117 may have multiple processor units 121, depending upon their intended use, as previously discussed. Also, while only a single interface device 113 or 123 is illustrated for both the master computer 103 and the computers, it should be noted that, with alternate embodiments of the disclosed technology, either the computer 103, one or more of the computers 117, or some combination of both may use two or more different interface devices 113 or 123 for communicating over multiple communication interfaces.
• the master computer 103 may be connected to one or more external data storage devices. These external data storage devices may be implemented using any combination of computer readable media that can be accessed by the master computer 103.
• the computer readable media may include, for example, microcircuit memory devices such as read-write memory (RAM), read-only memory (ROM), electronically erasable and programmable read-only memory (EEPROM) or flash memory microcircuit devices, CD-ROM disks, digital video disks (DVD), or other optical storage devices.
• the computer readable media may also include magnetic cassettes, magnetic tapes, magnetic disks or other magnetic storage devices, punched media, holographic storage devices, or any other medium that can be used to store desired information.
• one or more of the computers 117 may alternately or additionally be connected to one or more external data storage devices.
• these external data storage devices will include data storage devices that also are connected to the master computer 103, but they also may be different from any data storage devices accessible by the master computer 103.
• first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the various embodiments described herein.
• the term “and/or” includes any and all combinations of one or more of the associated listed items.
• the computer readable media may be a computer readable signal medium or a computer readable storage medium.
• a computer readable storage medium may be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any suitable combination of the foregoing.
• a computer readable storage medium may be any tangible medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device.
• a computer readable signal medium may include a propagated data signal with computer readable program code embodied therein, for example, in baseband or as part of a carrier wave. Such a propagated signal may take any of a variety of forms, including, but not limited to, electro-magnetic, optical, or any suitable combination thereof.
• a computer readable signal medium may be any computer readable medium that is not a computer readable storage medium and that can communicate, propagate, or transport a program for use by or in connection with an instruction execution system, apparatus, or device.
• Program code embodied on a computer readable signal medium may be transmitted using any appropriate medium, including but not limited to wireless, wired, optical fiber cable, RF, etc., or any suitable combination of the foregoing.
• Computer program code for carrying out operations for aspects of the present disclosure may be written in any combination of one or more programming languages, including an object oriented programming language such as Java, Scala, Smalltalk, Eiffel, JADE, Emerald, C++, C#, VB.NET, Python or the like, conventional procedural programming languages, such as the “C” programming language, Visual Basic, Fortran 2003, Perl, COBOL 2002, PHP, ABAP, dynamic programming languages such as Python, Ruby and Groovy, or other programming languages, such as a programming language for a FPGA, Verilog, System Verilog, Hardware Description language (HDL), and VHDL, .
• object oriented programming language such as Java, Scala, Smalltalk, Eiffel, JADE, Emerald, C++, C#, VB.NET
• Python conventional procedural programming languages
• C Visual Basic, Fortran 2003, Perl, COBOL 2002, PHP, ABAP
• dynamic programming languages such as Python, Ruby and Groovy
• other programming languages such as a programming language for a FPGA
• the program code may execute entirely on the user’s computer, partly on the user’s computer, as a stand-alone software package, partly on the user’s computer and partly on a remote computer or entirely on the remote computer or server.
• the remote computer may be connected to the user’s computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or the connection may be made to an external computer (for example, through the Internet using an Internet Service Provider) or in a cloud computer environment or offered as a service such as a Software as a Service (SaaS).
• LAN local area network
• WAN wide area network
• SaaS Software as a Service
• These computer program instructions may also be stored in a computer readable medium that when executed can direct a computer, other programmable data processing apparatus, or other devices to function in a particular manner, such that the instructions when stored in the computer readable medium produce an article of manufacture including instructions which when executed, cause a computer to implement the function/act specified in the flowchart and/or block diagram block or blocks.
• the computer program instructions may also be loaded onto a computer, other programmable instruction execution apparatus, or other devices to cause a series of operational steps to be performed on the computer, other programmable apparatuses or other devices to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide processes for implementing the functions/acts specified in the flowchart and/or block diagram block or blocks.

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