WO2021167325A1 - Gas supply device and deposition device comprising same - Google Patents

Gas supply device and deposition device comprising same Download PDF

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Publication number
WO2021167325A1
WO2021167325A1 PCT/KR2021/001977 KR2021001977W WO2021167325A1 WO 2021167325 A1 WO2021167325 A1 WO 2021167325A1 KR 2021001977 W KR2021001977 W KR 2021001977W WO 2021167325 A1 WO2021167325 A1 WO 2021167325A1
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WO
WIPO (PCT)
Prior art keywords
gas supply
supply device
region
thermal expansion
groove
Prior art date
Application number
PCT/KR2021/001977
Other languages
French (fr)
Korean (ko)
Inventor
안범모
엄영흠
강신구
Original Assignee
(주)포인트엔지니어링
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Publication of WO2021167325A1 publication Critical patent/WO2021167325A1/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/4557Heated nozzles

Definitions

  • the present invention relates to a gas supply device, and more particularly, to a gas supply device for preventing thermal expansion deformation due to heat by inserting a restraining member into the interior of a body.
  • the deposition process Since the deposition process has the advantage of forming a film uniformly on a large-area substrate at a high speed, it is widely used in the manufacture of semiconductor devices or LCD panels.
  • the deposition apparatus includes a susceptor in which a substrate is horizontally seated and a heater is built therein, and a gas supply device that injects gas through a gas hole provided inside the upper portion of the susceptor.
  • a gas supply device that injects gas through a gas hole provided inside the upper portion of the susceptor.
  • the gas supply device expands by receiving heat from a heater built into the susceptor. As the lower surface of the gas supply device expands more than the upper surface, the gas supply device is deformed to be bent. Since this deformation makes the distance between the substrate and the gas supply device non-uniform, the plasma density becomes non-uniform, thereby forming a non-uniform film on the substrate. This problem becomes more problematic as the substrate becomes larger in area and the semiconductor pattern is miniaturized to several nm.
  • Patent Document 1 adopts the configuration of two outer circumferential grooves in the outer portion of the substrate in order to prevent the gas supply device from being bent and deformed due to thermal expansion. This outer circumferential groove acts as a mechanical bellows for allowing horizontal deformation according to thermal expansion.
  • Patent Document 1 since the technical means of Patent Document 1 allows horizontal deformation, the position of the gas hole of the gas supply device also causes displacement in the horizontal direction. For this reason, the technical means of Patent Document 1 causes a problem of impairing the film formation uniformity in the semiconductor micro-process as the pitch between the gas holes of the gas supply device is changed according to the temperature range.
  • Patent Document 1 Korean Patent No. 10-0492135
  • the present invention has been devised to solve the above problems, and by providing a constraining member having a thermal expansion coefficient lower than the thermal expansion coefficient of the body in a second region that is a peripheral region of a first region in which a through hole is provided, thermal expansion of a gas supply device
  • An object of the present invention is to provide a gas supply device that does not allow deformation by
  • a gas supply apparatus includes: a body including a first area having a through hole and a second area having a groove in a shape surrounding the first area from the outside of the first area; and a restraining member provided in the groove and configured to not allow thermal deformation of the body while having a thermal expansion coefficient smaller than the thermal expansion coefficient of the body.
  • the restraining member is located closer to the lower surface side than the upper surface side of the body.
  • the restraining member is provided as an integral metal band.
  • the grooves are provided in the form of an arc spaced apart along the circumference of the first region, and the restraining member is provided in each of the grooves.
  • the restraining member is filled with a metallic material.
  • a heating wire is provided on the upper portion of the constraining member.
  • a deposition apparatus includes a body including a first region having a through hole and a second region having a groove in a shape surrounding the first region from the outside of the first region and the groove a gas supply device provided in and having a thermal expansion coefficient smaller than the thermal expansion coefficient of the body and including a restraining member for not allowing thermal deformation of the body; and a susceptor having a heater therein.
  • the gas supply apparatus according to the preferred embodiment of the present invention as described above has the following effects.
  • the gas supply device does not allow thermal deformation due to thermal expansion of the body by embedding a restraining member having a thermal expansion coefficient smaller than the thermal expansion coefficient of the body embedded in the body. Through this, the uniformity of the film formation is improved.
  • the second constraining member prevents thermal deformation due to thermal expansion of the body It is possible to prevent shear failure that may occur in the body while absorbing relatively.
  • the constraining member may be provided in various shapes regardless of the shape.
  • the heating wire on the upper surface of the restraining member, it is possible to prevent thermal deformation due to thermal expansion of the body by reducing the temperature difference between the lower portion of the body and the upper portion of the body.
  • 1 is a cross-sectional view showing a deposition apparatus
  • Figure 2 is an exploded perspective view of a gas supply device according to a first embodiment of the present invention.
  • FIG 3 is a bottom plan view of a gas supply device according to a first preferred embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of a gas supply device according to a first preferred embodiment of the present invention.
  • FIG. 5 is a cross-sectional view of a gas supply device according to a second preferred embodiment of the present invention.
  • Figure 6 (a) is a plan view of the constraining member of the gas supply device according to a third preferred embodiment of the present invention.
  • FIG. 6 (b) is a bottom plan view of a gas supply device according to a third preferred embodiment of the present invention.
  • FIG. 7 is a cross-sectional view of a gas supply device according to a fourth preferred embodiment of the present invention.
  • FIG. 8 is a cross-sectional view of a gas supply device according to a fifth preferred embodiment of the present invention.
  • FIG. 9 is a cross-sectional view of a gas supply device according to a sixth preferred embodiment of the present invention.
  • FIGS. 1 to 4 a first preferred embodiment of the present invention will be described with reference to FIGS. 1 to 4 .
  • the gas supply device 1 has a first area 11 provided with a through hole 13 and a shape surrounding the first area 11 from the outside of the first area 11 .
  • Thermal deformation of the body 10 while having a thermal expansion coefficient smaller than the thermal expansion coefficient of the body 10 and provided in the body 10 and the groove 14 including the second region 12 provided with the furnace groove 14 It may include a constraining member 20 to not allow the.
  • FIG. 1 is a diagram illustrating a deposition apparatus 2 including a gas supply apparatus 1 according to a preferred embodiment of the present invention.
  • the deposition apparatus 2 treats a workpiece or substrate 3 with a chemical process, which is one of a series of steps for manufacturing a semiconductor or other electronic device on the workpiece.
  • the workpiece is supported in the deposition apparatus 2 by a susceptor 6 .
  • Typical examples of a workpiece or substrate 3 processed in the deposition apparatus 2 include rectangular glass substrates used for flat panel displays or circular semiconductor wafers on which circuits are integrated.
  • the side wall and the bottom wall of the deposition apparatus 2 are provided as a single wall 15 .
  • a hinged lid 16 and a gas inlet manifold top wall 18 are provided at the top of the deposition apparatus 2 .
  • the interior of the deposition apparatus 2 can be accessed by lifting the lid 16 .
  • An O-ring 19 (some not shown) provides a vacuum seal between the sidewall 15 , the lid 16 , and the gas inlet manifold top wall 18 .
  • the side and bottom walls 15 , the leads 16 and the gas inlet manifold top wall 18 are all considered parts of the deposition apparatus 2 wall.
  • the gas inlet manifold includes a gas inlet manifold upper wall 18 and a gas supply 1 , wherein gas passes through a gas inlet orifice 28 of the gas inlet manifold upper wall 18 to the gas supply 1 . and the gas flows into the deposition device 2 through the gas supply device 1 .
  • the gas inlet manifold further includes a gas inlet manifold sidewall, the gas inlet manifold sidewall also referred to as a gas sealing sidewall, the gas inlet manifold sidewall being disposed between the upper wall 18 and the gas supply 1 . Provides sealing.
  • the gas inlet manifold top wall 18 , the sidewalls and the gas supply 1 are joined to form the interior region of the gas inlet manifold.
  • An external gas source supplies process gas to one or more gas inlet orifices (28) in the gas inlet manifold upper wall (18) through which the process gas is directed to the interior region (26) of the gas inlet manifold (26). ) to flow.
  • Process gases flow from the interior region 26 of the gas inlet manifold into the interior of the deposition apparatus 2 through one or more typically hundreds or thousands of through-holes 13 in the gas supply 1 .
  • the sidewall sealing of the gas inlet manifold is achieved by a dielectric liner 24 covering the inner wall of the chamber lid 16 .
  • the gas inlet manifold includes a gas inlet deflector consisting of a circular disk 34 having a diameter slightly larger than the diameter of the gas inlet orifice 28 and suspended below the orifice by posts not shown.
  • a cover 39 may generally be provided over the chamber lid 16 .
  • the cover 39 prevents foreign substances from coming into contact with the gas inlet manifold upper wall 18 or the gas supply device 1 .
  • a dielectric liner 35 may be provided between the cover 39 and the gas inlet manifold upper wall 18 .
  • the dielectric liner 35 may be provided along the periphery of the upper surface of the gas inlet manifold upper wall 18 , and one side of the dielectric liner is in contact with the gas inlet manifold upper wall 18 and the other side is in contact with the cover 29 and Abutting can be provided.
  • the components of the deposition apparatus 2 must be made of a material that does not contaminate the semiconductor manufacturing process performed in the chamber and is resistant to corrosion by the process gas.
  • all parts except for the O-ring, dielectric spacer and liner are made of aluminum or an aluminum alloy.
  • the body 10 of the gas supply device 1 may be formed in a polygonal shape, such as a circle or a rectangle, and in the following description, the body 10 will be illustrated and described as an example in which the shape of the body 10 is a circle.
  • the body 10 may be formed in the form of a circular plate, and the outer surface of the body 10 may be formed in a stepped shape.
  • the body 10 is formed so that the diameter of the upper surface is larger than the diameter of the lower surface, the outer surface of the body 10 is to have a stepped shape.
  • the body 10 is preferably made of aluminum or an aluminum alloy.
  • the body 10 includes a first region 11 having a through hole 13 and a second region 12 surrounding the first region 11 .
  • first region 11 having a through hole 13
  • second region 12 surrounding the first region 11 .
  • the first area 11 is an area provided with a plurality of through holes 13 .
  • the first region 11 refers to a region from the center of the lower surface of the body 10 to a point where the second region 12 starts. In other words, the first region 11 refers to a region formed inside the second region 12 .
  • the through-holes 13 may be formed to pass through the body 10 in the first region 11 , and the through-holes 13 may be evenly distributed throughout the first region 11 .
  • the through hole 13 serves to communicate the upper portion of the body 10 with the lower portion of the body 10 , and the gas moves from the upper portion of the body 10 to the lower portion of the body 10 through the through hole 13 .
  • the second region 12 is a region in which the through hole 13 is not provided.
  • the second region 12 refers to a region from the outermost surface of the lower surface of the body 10 to a point where the first region 11 starts. In other words, the second region 12 refers to a region surrounding the first region 11 from the outside of the first region 11 .
  • a band-shaped groove 14 having a predetermined depth may be provided in the second region 12 .
  • the groove 14 may be provided in a shape surrounding the first region 11 in the second region 12 .
  • the groove 14 may be formed to be convex upward from the lower surface of the body 10 .
  • the constraining member 20 and the closing member 30 may be sequentially inserted along the inside of the groove 14 .
  • the groove 14 may be formed so that the entrance width of the opening is larger than the width of the upper side of the opening. That is, the groove 14 may be formed so that an inner width into which the restraining member 20 is inserted is smaller than an outer width into which the closing member 30 is inserted.
  • the constraining member 20 may have the same shape as the shape of the groove 14 . In other words, the constraining member 20 may be formed in an integral metal band shape.
  • the restraining member 20 serves to prevent the lower surface of the body 10 from being deformed by thermal expansion due to heat. Therefore, the constraining member 20 is preferably made of a material having a coefficient of thermal expansion smaller than that of the body 10 .
  • the constraining member 20 is preferably made of SUS material.
  • the constraining member 20 may be formed of a composite molding including a powder component having a low coefficient of thermal expansion.
  • the density of the powder may be uniformly distributed in the constraining member 20 , but the density of the powder may be different in the upper and lower portions of the constraining member 20 .
  • the powder density in the upper portion of the restraining member 20 may be higher than the powder density in the lower portion of the restraining member 20 , and on the contrary, the powder density in the lower portion of the restraining member 20 is 20) may be higher than the powder density at the top.
  • the closing member 30 may be formed in the same shape as the constraining member 20 and may be formed in an integral metal grime shape.
  • the closing member 30 is inserted into the opening of the groove 14 to cover the opening of the groove 14 .
  • the finishing member 30 may be coupled to the body 10 by a method such as argon welding, electron beam welding, brazing bonding, or friction stir welding.
  • the width of the closing member 30 may be greater than the width of the constraining member 20 .
  • the closing member 30 is coupled to the body 10 at the lower side of the constraining member 20 to prevent the constraining member 20 seated in the groove 14 from being separated in the lower direction of the body 10 .
  • the closing member 30 is preferably made of the same material as the body 10 .
  • the finishing member 30 may be made of aluminum or an aluminum alloy material.
  • the restraining member 20 and the closing member 30 may be sequentially seated in the groove 14 provided in the body 10 at the lower portion of the body 10 .
  • the restraining member 20 may be located closer to the lower surface side than the upper surface side of the body 10 .
  • the groove 14 may be provided such that the center line of the groove 14 is located at a position lower than the center line CL with respect to the center line CL of the body 10 .
  • the groove 14 is formed convexly in the upper direction of the body 10 from the lower surface of the body 10 .
  • the height of the center line of the groove 14 is lower than or equal to the center line CL of the body 10 .
  • the position of the center line of the constraining member 20 provided in the groove 14 is located at a lower position than the center line CL of the body 10 .
  • the gas supply device 1 has a constraint member 20 having a lower coefficient of thermal expansion than the coefficient of thermal expansion of the body 10 in the second region 12 , which is a region surrounding the first region 11 from the outside of the first region 11 . By providing a, deformation due to thermal expansion is not allowed.
  • the body 10 may be heated by heat generated by a process performed in the deposition apparatus 2 .
  • Heat is applied to the lower side of the body 10 by a heater built into the susceptor 6 , and thermal expansion deformation in which the lower side of the body 10 expands outwardly is made, in the first region 11 .
  • a force is applied so that the pitch interval of the provided through-holes 13 is widened.
  • the restraining member 20 may be provided in the second region 12 that is the outer surface of the first region 11 of the body 10 to prevent the first region 11 from being expanded by heat. That is, the constraining member 20 is formed in the shape of a circular metal band to restrain the first region 11 from the outer surface of the first region 11 to prevent the first region 11 from expanding in the outward direction. will be. That is, unless the constraining member 20 constraining the first region 11 is thermally deformed, the body 10 is also not thermally deformed.
  • the gas supply device 1 does not allow thermal deformation due to thermal expansion of the body 10 by embedding the constraining member 20 having a thermal expansion coefficient smaller than the thermal expansion coefficient of the body 10 by embedding it in the body. .
  • the gas supply device 1a according to the second preferred embodiment of the present invention may be configured by further including a second restraining member 22 in the gas supply device 1 according to the first preferred embodiment of the present invention. have. Therefore, the description of the gas supply apparatus 1 according to the first preferred embodiment of the present invention described above may be applied to other configurations of the gas supply apparatus 1a according to the second preferred embodiment of the present invention, and overlapping descriptions is omitted.
  • the gas supply device 1a may include a plurality of restraining members 20 .
  • a plurality of restraining members 20 may be provided in the groove 14 .
  • the plurality of constraining members 20 may be vertically stacked inside the groove 14 .
  • the constraining member 20 may include a first constraining member 21 and a second constraining member 22 .
  • the first restraining member 21 may be provided under the second restraining member 22 inside the groove 14 .
  • the first restraining member 21 may be provided between the second restraining member 22 and the closing member 30 .
  • the upper surface of the first constraining member 21 may be in contact with the lower surface of the second constraining member 22
  • the lower surface of the first constraining member 21 may be in contact with the closing member 30 .
  • the thermal expansion coefficient of the first constraining member 21 and the thermal expansion coefficient of the second constraining member 22 may be different from each other.
  • the first constraining member 21 may have a coefficient of thermal expansion smaller than that of the second constraining member 22 .
  • the second constraining member 22 may be provided on the first constraining member 21 inside the groove 14 .
  • the upper surface of the second restraining member 22 may be in contact with the body 10
  • the lower surface of the second restraining member 22 may be in contact with the upper surface of the first restraining member 21 .
  • the second constraining member 22 may have a coefficient of thermal expansion greater than the coefficient of thermal expansion of the first constraining member 21 and smaller than the coefficient of thermal expansion of the body 10 .
  • the coefficient of thermal expansion of the first constraining member 21 , the second constraining member 22 and the body 10 has the smallest coefficient of thermal expansion of the first constraining member 21 , and the thermal expansion coefficient of the body 10 is the most it can be big
  • the thermal expansion coefficient is greater than that of the first constraining member 21 and the thermal expansion is greater than that of the body 10
  • the second constraining member 22 having a small coefficient, the difference in the coefficient of thermal expansion between the body 10 and the first constraining member 21 may be reduced.
  • the first constraining member 21 and the second constraining member 22 do not allow deformation by restraining the body 10 from being deformed due to thermal expansion.
  • a shear failure phenomenon may occur in the body 10 .
  • the second constraint member 22 can relatively absorb thermal deformation due to thermal expansion of the body 10 and prevent shear fracture that may occur in the body 10 .
  • the coefficient of thermal expansion of the first constraining member 21 may be greater than that of the second constraining member 22 .
  • first and second constraining members 21 and 22 have different coefficients of thermal expansion to prevent shear failure that may occur in the body 10 due to the difference in the abrupt thermal expansion coefficient between the constraining member 20 and the body 10 . can do.
  • the plurality of constraining members 20 may have different coefficients of thermal expansion, and at least one of the plurality of constraining members 20 may be composed of at least one of a metal material, a composite molding, or a filler.
  • the plurality of constraining members 20 may have different volumes, heights, areas, or shapes, and may be made of materials having different physical properties, chemical properties, and thermal properties.
  • the shape of the constraining member 20a of the gas supply apparatus 1 according to the first preferred embodiment of the present invention is different. Accordingly, the description of the gas supply apparatus 1 according to the first preferred embodiment of the present invention described above may be applied to other configurations of the gas supply apparatus 1b according to the third preferred embodiment of the present invention, and overlapping descriptions is omitted.
  • the gas supply device 1b may be provided in an arc shape in which the constraining members 20a are spaced apart.
  • the groove 14 may be provided in the form of an arc spaced apart from the lower surface of the body 10 along the circumference of the first region 11 .
  • a plurality of grooves 14 may be provided along the circumference of the first region 11 .
  • the constraint member 20a and the closing member 30a may be provided in the groove 14 to have the same shape as the groove 14 .
  • the restraining member 20a When the restraining member 20a is formed in a circular band shape and inserted into the groove 14 , it may be difficult to insert the restraining member 20a into the groove 14 even if a small error occurs in the dimension of the restraining member 20a.
  • the constraining member 20a by providing the constraining member 20a by forming a plurality of grooves 14 along the periphery of the first region 11 , thermal deformation of the body 10 is not allowed and the constraining member 20a can be more easily removed at the same time. It can be inserted into the groove (14).
  • the constraint member 20b of the gas supply apparatus 1 according to the first preferred embodiment of the present invention may be configured in a different manner. Accordingly, the description of the gas supply device 1 according to the first preferred embodiment of the present invention described above may be applied to other configurations of the gas supply device 1c according to the fourth preferred embodiment of the present invention, and overlapping descriptions is omitted.
  • the restraining member 20b may be provided by filling the inside of the groove 14 with a metal material.
  • the constraining member 20b is formed in the peripheral region of the first region 11 by filling the metal material in a liquid state into the groove 14 and then solidifying the metal material after the groove 14 is formed. 20b) can be provided.
  • the constraining member 20b in such a way that the metal material is filled in the groove 14, the constraining member can be provided in various shapes regardless of the shape.
  • the gas supply device 1d according to the fifth preferred embodiment of the present invention may be configured by further including the heating wire 40 in the gas supply device 1 according to the first preferred embodiment of the present invention. Accordingly, the description of the gas supply apparatus 1 according to the first preferred embodiment of the present invention described above may be applied to other configurations of the gas supply apparatus 1d according to the fifth preferred embodiment of the present invention, and overlapping descriptions is omitted.
  • a heating wire 40 may be provided on an upper portion of the restraining member 20 .
  • the heating wire 40 may be provided on the upper portion of the restraining member 20c inside the groove 14 .
  • the upper surface of the heating wire 40 may be in contact with the body 10 and the lower surface may be in contact with the upper surface of the restraining member 20c.
  • the heating wire 40 may be formed in the shape of a circular band having a cross section of a polygonal shape, such as a circle or a square.
  • the heating wire 40 may be formed in a circular band shape having a circular cross-section.
  • the upper surface of the restraining member 20c in contact with the heating wire 40 may have a seating groove concave inwardly.
  • the heating wire 40 may be provided while being seated in the seating groove of the restraining member 20c.
  • the heating wire 40 may be provided between the groove 14 and the through hole 13 .
  • the heating wire 40 on the upper surface or the side surface of the restraining member 20c, by reducing the temperature difference between the temperature of the lower portion and the upper portion of the body 10, thermal deformation due to thermal expansion of the body 10 can be prevented. have.
  • the gas supply device 1e according to the sixth preferred embodiment of the present invention includes a plurality of grooves 14 and a constraining member 20 in the gas supply device 1 according to the first preferred embodiment of the present invention.
  • the description of the gas supply apparatus 1 according to the first preferred embodiment of the present invention described above may be applied to other configurations of the gas supply apparatus 1e according to the sixth preferred embodiment of the present invention, and overlapping descriptions is omitted.
  • a plurality of grooves 14 may be provided in the horizontal direction of the body 10 .
  • a plurality of grooves 14 may be provided in the second region 12 in a horizontal direction.
  • the grooves 14 have different outer diameters and are provided in plurality, and a restraining member 20 may be provided in any one of the respective grooves 14 .
  • two grooves 14 may be provided in the second region 12 .
  • the constraining member 20 may be provided in both of the two grooves 14 .
  • the restraining member 20 may be provided in only one of the two grooves 14 .
  • three grooves 14 may be provided in the second region 12 , and as shown in FIG. 9( c ), the restraining member 20 is provided in two grooves 14 among the three grooves 14 . ) may be provided.
  • first constraining member 20a may be provided in the groove 14 provided on the inner side of the plurality of grooves 14, and the second constraining member 20b may be provided in the groove 14 provided between the outer side and the inner side. may be provided.
  • thermal deformation due to thermal expansion of the body 10 may not be more reliably allowed.
  • the number of constraining members 20 is flexibly changed according to the temperature inside the deposition apparatus 2 .

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

In a gas supply device according to a preferred embodiment of the present invention, a constraining member having a thermal expansion coefficient smaller than the thermal expansion coefficient of a body is provided in a groove formed around a first area. Accordingly, a gas supply device that does not allow thermal deformation of the body can be provided.

Description

가스 공급장치 및 이를 구비한 증착장치Gas supply device and deposition device having the same
본 발명은 가스 공급장치에 관한 것으로, 보다 구체적으로는 바디의 내부에 구속 부재를 삽입함으로써 열에 의한 열팽창 변형을 방지하기 위한 가스 공급장치에 관한 것이다.The present invention relates to a gas supply device, and more particularly, to a gas supply device for preventing thermal expansion deformation due to heat by inserting a restraining member into the interior of a body.
증착공정은 대면적 기판에 빠른 속도로 균일하게 성막을 형성시킬 수 있는 장점이 있기 때문에 반도체 소자나 LCD 판넬(panel) 제작시에 많이 사용된다. Since the deposition process has the advantage of forming a film uniformly on a large-area substrate at a high speed, it is widely used in the manufacture of semiconductor devices or LCD panels.
증착 장치에는 기판이 수평 안착되어지고 내부에 히터가 내장된 서셉터와 서셉터 상부에서 내부게 구비된 가스홀을 통해 가스를 분사하는 가스 공급장치가 구비된다. 이러한 증착 장치에서 균일한 성막 특성을 얻기 위해서는 여러가지 조건, 예컨대 균일한 가스공급, 균일한 온도분포, 그리고 기판과 플라즈마 전극 사이의 거리가 일정할 것 등이 요구된다.The deposition apparatus includes a susceptor in which a substrate is horizontally seated and a heater is built therein, and a gas supply device that injects gas through a gas hole provided inside the upper portion of the susceptor. In order to obtain uniform film formation characteristics in such a deposition apparatus, various conditions, such as uniform gas supply, uniform temperature distribution, and a constant distance between the substrate and the plasma electrode, are required.
가스공급장치는 서셉터에 내장된 히터로부터 열을 받아 팽창하게 되는데, 가스공급장치의 하면이 상면보다 더 많이 팽창함으로써 가스 공급장치가 구부러지게 변형된다. 이러한 변형은 기판과 가스 공급장치 사이의 간격을 불균일하게 만들기 때문에 플라즈마 밀도가 균일하지 않게 되어 기판상에 불균일한 성막을 형성하게 된다. 이러한 문제는 기판이 대면적화되고 반도체 패턴이 수 nm로 미세화 될수록 더욱 문제된다. The gas supply device expands by receiving heat from a heater built into the susceptor. As the lower surface of the gas supply device expands more than the upper surface, the gas supply device is deformed to be bent. Since this deformation makes the distance between the substrate and the gas supply device non-uniform, the plasma density becomes non-uniform, thereby forming a non-uniform film on the substrate. This problem becomes more problematic as the substrate becomes larger in area and the semiconductor pattern is miniaturized to several nm.
이러한 문제점을 해결하기 위한 발명으로 한국 등록특허 등록번호 제10-0492135호(이하, '특허문헌 1'이라 함)에 기재된 것이 공지되어 있다. 특허문헌 1은 가스 공급장치가 열팽창하여 구부러지게 변형하는 것을 방지하기 위하여 기판의 외곽부위에 2개의 외주홈의 구성을 채택하고 있다. 이러한 외주홈은 열팽창에 따른 수평 변형을 허용하기 위한 기계적 벨로우즈로서 작용하게 된다. As an invention for solving this problem, it is known that it is described in Korean Patent Registration No. 10-0492135 (hereinafter referred to as 'Patent Document 1'). Patent Document 1 adopts the configuration of two outer circumferential grooves in the outer portion of the substrate in order to prevent the gas supply device from being bent and deformed due to thermal expansion. This outer circumferential groove acts as a mechanical bellows for allowing horizontal deformation according to thermal expansion.
하지만 특허문헌 1의 기술적 수단은 수평 변형을 허용하기 때문에 가스 공급장치의 가스홀의 위치 역시 수평 방향으로 변위를 일으키게 된다. 이로 인해 특허 문헌 1의 기술적 수단은 온도 범위에 따라 가스 공급장치의 가스홀간의 피치가 변화됨에 따라 반도체 미세 공정에서의 성막 균일도를 저해하는 문제를 야기하게 된다.However, since the technical means of Patent Document 1 allows horizontal deformation, the position of the gas hole of the gas supply device also causes displacement in the horizontal direction. For this reason, the technical means of Patent Document 1 causes a problem of impairing the film formation uniformity in the semiconductor micro-process as the pitch between the gas holes of the gas supply device is changed according to the temperature range.
[선행기술문헌][Prior art literature]
[특허문헌][Patent Literature]
(특허문헌 1) 한국등록특허 제10-0492135호(Patent Document 1) Korean Patent No. 10-0492135
본 발명은 전술한 문제점을 해결하기 위해 안출된 것으로, 관통홀이 구비되는 제1영역의 주변영역인 제2영역에 바디의 열팽창계수보다 낮은 열팽창계수를 갖는 구속 부재를 구비함으로써 가스 공급장치의 열팽창에 의한 변형을 허용하지 않는 가스 공급장치를 제공하는 것을 목적으로 한다. The present invention has been devised to solve the above problems, and by providing a constraining member having a thermal expansion coefficient lower than the thermal expansion coefficient of the body in a second region that is a peripheral region of a first region in which a through hole is provided, thermal expansion of a gas supply device An object of the present invention is to provide a gas supply device that does not allow deformation by
본 발명의 일 특징에 따른 가스 공급장치는, 관통홀이 구비된 제1영역과, 상기 제1영역의 외측에서 상기 제1영역을 감싸는 형태로 홈이 구비된 제2영역을 포함하는 바디; 및 상기 홈에 구비되고 상기 바디의 열팽창계수 보다 작은 열팽창계수를 가지면서 상기 바디의 열변형을 허용하지 않도록 하는 구속 부재;를 포함한다.A gas supply apparatus according to one aspect of the present invention includes: a body including a first area having a through hole and a second area having a groove in a shape surrounding the first area from the outside of the first area; and a restraining member provided in the groove and configured to not allow thermal deformation of the body while having a thermal expansion coefficient smaller than the thermal expansion coefficient of the body.
또한, 상기 구속 부재는 상기 바디의 상면측 보다 하면측에 보다 가깝게 위치한다.In addition, the restraining member is located closer to the lower surface side than the upper surface side of the body.
또한, 상기 구속 부재는 일체형의 금속띠로 구비된다.In addition, the restraining member is provided as an integral metal band.
또한, 상기 구속 부재는 상기 홈 내부에 복수개 구비된다.In addition, a plurality of the constraining members are provided inside the groove.
또한, 상기 홈은 상기 제1영역의 둘레를 따라 이격된 호의 형태로 구비되며, 상기 홈 각각에 상기 구속 부재가 구비된다.In addition, the grooves are provided in the form of an arc spaced apart along the circumference of the first region, and the restraining member is provided in each of the grooves.
또한, 상기 구속 부재는 금속물질이 충진된다.In addition, the restraining member is filled with a metallic material.
또한, 상기 구속 부재의 상부에 열선이 구비된다.In addition, a heating wire is provided on the upper portion of the constraining member.
본 발명의 일 특징에 따른 증착 장치는, 관통홀이 구비된 제1영역과, 상기 제1영역의 외측에서 상기 제1영역을 감싸는 형태로 홈이 구비된 제2영역을 포함하는 바디와 상기 홈에 구비되고 상기 바디의 열팽창계수 보다 작은 열팽창계수를 가지면서 상기 바디의 열변형을 허용하지 않도록 하는 구속 부재를 포함하는 가스 공급장치; 및 내부에 히터를 구비한 서셉터;를 포함한다.A deposition apparatus according to one aspect of the present invention includes a body including a first region having a through hole and a second region having a groove in a shape surrounding the first region from the outside of the first region and the groove a gas supply device provided in and having a thermal expansion coefficient smaller than the thermal expansion coefficient of the body and including a restraining member for not allowing thermal deformation of the body; and a susceptor having a heater therein.
이상에서 설명한 바와 같은 본 발명의 바람직한 실시 예에 따른 가스 공급장치는 다음과 같은 효과가 있다.The gas supply apparatus according to the preferred embodiment of the present invention as described above has the following effects.
가스 공급장치는 바디의 열팽창계수보다 작은 열팽창계수를 가진 구속 부재를 바디 내부에 매립하여 구비함으로써 바디의 열팽창에 의한 열 변형을 허용하지 않는다. 이를 통해 성막의 균일성이 향상된다. The gas supply device does not allow thermal deformation due to thermal expansion of the body by embedding a restraining member having a thermal expansion coefficient smaller than the thermal expansion coefficient of the body embedded in the body. Through this, the uniformity of the film formation is improved.
또한, 열팽창계수가 작은 제1구속 부재와 열팽창계수가 큰 바디 사이에 제1구속 부재보다 상대적으로 열팽창계수가 큰 제2구속 부재를 구비함으로써, 제2구속 부재가 바디의 열팽창에 의한 열변형을 상대적으로 흡수해주면서 바디에서 발생될 수 있는 전단 파괴 현상을 방지할 수 있다.In addition, by providing a second constraining member having a relatively large coefficient of thermal expansion than the first constraining member between the first constraining member having a small coefficient of thermal expansion and the body having a large thermal expansion coefficient, the second constraining member prevents thermal deformation due to thermal expansion of the body It is possible to prevent shear failure that may occur in the body while absorbing relatively.
또한, 제1영역의 둘레를 따라 복수개의 홈을 형성하여 구속 부재를 구비함으로써 바디의 열변형을 허용하지 않음과 동시에 보다 쉽게 구속 부재를 홈에 삽입할 수 있다.In addition, since a plurality of grooves are formed along the circumference of the first region and provided with the restraining member, thermal deformation of the body is not allowed and the restraining member can be more easily inserted into the groove.
또한, 홈의 내부에 금속 물질을 충진하는 방식으로 구속 부재를 구비함으로써 형상에 구애받지 않고 다양한 형상으로 구속 부재를 구비할 수 있다. In addition, by providing the constraining member in a manner of filling the interior of the groove with a metal material, the constraining member may be provided in various shapes regardless of the shape.
또한, 구속 부재의 상면에 열선을 구비함에 따라, 바디의 하부의 온도와 상부의 온도차를 줄임으로서 바디의 열팽창에 의한 열변형을 방지할 수 있다.In addition, by providing the heating wire on the upper surface of the restraining member, it is possible to prevent thermal deformation due to thermal expansion of the body by reducing the temperature difference between the lower portion of the body and the upper portion of the body.
도 1은 증착 장치를 도시한 단면도.1 is a cross-sectional view showing a deposition apparatus;
도 2는 본 발명의 바람직한 제1실시 예에 따른 가스 공급장치의 분해 사시도.Figure 2 is an exploded perspective view of a gas supply device according to a first embodiment of the present invention.
도 3은 본 발명의 바람직한 제1실시 예에 따른 가스 공급장치의 하면 평면도.3 is a bottom plan view of a gas supply device according to a first preferred embodiment of the present invention.
도 4는 본 발명의 바람직한 제1실시 예에 따른 가스 공급장치의 단면도4 is a cross-sectional view of a gas supply device according to a first preferred embodiment of the present invention;
도 5는 본 발명의 바람직한 제2실시 예에 따른 가스 공급장치의 단면도.5 is a cross-sectional view of a gas supply device according to a second preferred embodiment of the present invention.
도 6(a)는 본 발명의 바람직한 제3실시 예에 따른 가스 공급장치의 구속 부재의 평면도.Figure 6 (a) is a plan view of the constraining member of the gas supply device according to a third preferred embodiment of the present invention.
도 6(b)는 본 발명의 바람직한 제3실시 예에 따른 가스 공급장치의 하면 평면도6 (b) is a bottom plan view of a gas supply device according to a third preferred embodiment of the present invention;
도 7는 본 발명의 바람직한 제4실시 예에 따른 가스 공급장치의 단면도.7 is a cross-sectional view of a gas supply device according to a fourth preferred embodiment of the present invention.
도 8는 본 발명의 바람직한 제5실시 예에 따른 가스 공급장치의 단면도.8 is a cross-sectional view of a gas supply device according to a fifth preferred embodiment of the present invention.
도 9는 본 발명의 바람직한 제6실시 예에 따른 가스 공급장치의 단면도.9 is a cross-sectional view of a gas supply device according to a sixth preferred embodiment of the present invention.
이하의 내용은 단지 발명의 원리를 예시한다. 그러므로 당업자는 비록 본 명세서에 명확히 설명되거나 도시되지 않았지만 발명의 원리를 구현하고 발명의 개념과 범위에 포함된 다양한 장치를 발명할 수 있는 것이다. 또한, 본 명세서에 열거된 모든 조건부 용어 및 실시 예들은 원칙적으로, 발명의 개념이 이해되도록 하기 위한 목적으로만 명백히 의도되고, 이와 같이 특별히 열거된 실시 예들 및 상태들에 제한적이지 않는 것으로 이해되어야 한다.The following is merely illustrative of the principles of the invention. Therefore, those skilled in the art can devise various devices that, although not explicitly described or shown herein, embody the principles of the invention and are included in the spirit and scope of the invention. In addition, it should be understood that all conditional terms and examples listed herein are, in principle, expressly intended only for the purpose of understanding the inventive concept and are not limited to the specifically enumerated embodiments and states as such. .
상술한 목적, 특징 및 장점은 첨부된 도면과 관련한 다음의 상세한 설명을 통하여 보다 분명해질 것이며, 그에 따라 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 발명의 기술적 사상을 용이하게 실시할 수 있을 것이다.The above-described objects, features and advantages will become more apparent through the following detailed description in relation to the accompanying drawings, and accordingly, those of ordinary skill in the art to which the invention pertains will be able to easily practice the technical idea of the invention. .
이하, 도 1 내지 도 4를 참조하여 본 발명의 바람직한 제1실시 예를 설명한다.Hereinafter, a first preferred embodiment of the present invention will be described with reference to FIGS. 1 to 4 .
도 1 내지 도 4를 참조하면, 가스 공급장치(1)는 관통홀(13)이 구비된 제1영역(11)과, 제1영역(11)의 외측에서 제1영역(11)을 감싸는 형태로 홈(14)이 구비된 제2영역(12)을 포함하는 바디(10) 및 홈(14)에 구비되고 바디(10)의 열팽창계수 보다 작은 열팽창계수를 가지면서 바디(10)의 열변형을 허용하지 않도록 하는 구속 부재(20)를 포함할 수 있다.1 to 4 , the gas supply device 1 has a first area 11 provided with a through hole 13 and a shape surrounding the first area 11 from the outside of the first area 11 . Thermal deformation of the body 10 while having a thermal expansion coefficient smaller than the thermal expansion coefficient of the body 10 and provided in the body 10 and the groove 14 including the second region 12 provided with the furnace groove 14 It may include a constraining member 20 to not allow the.
도 1은 본 발명의 바람직한 실시 예에 따른 가스 공급장치(1)를 포함하는 증착 장치(2)를 도시한 도이다. 1 is a diagram illustrating a deposition apparatus 2 including a gas supply apparatus 1 according to a preferred embodiment of the present invention.
증착 장치(2)는 가공물 또는 기판(3)을 화학적 프로세스로 처리하며 이 화학적 프로세스는 가공물 상에 반도체 또는 다른 전자 장치를 제조하는 일련의 단계들 중 하나의 단계이다. 가공물은 서셉터(6)에 의해 증착 장치(2) 내에 지지된다. 증착 장치(2) 내에서 처리되는 가공물 또는 기판(3)의 통상의 예는 평평한 패널 디스플레이에 쓰이는 직사각형 유리 기판이나 회로가 집적되는 원형 반도체 웨이퍼를 포함한다. The deposition apparatus 2 treats a workpiece or substrate 3 with a chemical process, which is one of a series of steps for manufacturing a semiconductor or other electronic device on the workpiece. The workpiece is supported in the deposition apparatus 2 by a susceptor 6 . Typical examples of a workpiece or substrate 3 processed in the deposition apparatus 2 include rectangular glass substrates used for flat panel displays or circular semiconductor wafers on which circuits are integrated.
증착 장치(2)의 측벽 및 바닥벽은 단일 벽(15)으로서 구비 된다. 증착 장치(2)의 상부에는 힌지형 리드(16) 및 가스 유입 매니폴드 상부벽(18)이 제공된다. 리드(16)를 들어 올림으로써 증착 장치(2)의 내부로 접근할 수 있다. 오링(19)(일부는 도시 안됨)은 측벽(15), 리드(16) 및 가스 유입 매니폴드 상부 벽(18) 사이에 진공 밀봉을 제공한다. 측벽 및 바닥 벽(15), 리드(16) 및 가스 유입 매니폴드 상부 벽(18)은 증착 장치(2) 벽에서 고려되는 모든 부분들이다. The side wall and the bottom wall of the deposition apparatus 2 are provided as a single wall 15 . A hinged lid 16 and a gas inlet manifold top wall 18 are provided at the top of the deposition apparatus 2 . The interior of the deposition apparatus 2 can be accessed by lifting the lid 16 . An O-ring 19 (some not shown) provides a vacuum seal between the sidewall 15 , the lid 16 , and the gas inlet manifold top wall 18 . The side and bottom walls 15 , the leads 16 and the gas inlet manifold top wall 18 are all considered parts of the deposition apparatus 2 wall.
가공물 또는 기판(3) 상에 반도체 또는 다른 전자 장치를 제조하기 위한 프로세스를 수행하는 중에, 하나 이상의 가스가 가스 유입 매니폴드를 통해 증착 장치(2)로 공급된다. 가스 유입 매니폴드는 가스 유입 매니폴드 상부 벽(18) 및 가스 공급장치(1)를 포함하며 가스 유입 매니폴드 상부 벽(18)의 가스 유입 오리피스(28)를 통하여 가스가 가스 공급장치(1)로 유입되고 가스 공급장치(1)를 통하여 가스가 증착 장치(2) 내부로 유동한다. 가스 유입 매니폴드는 가스 유입 매니폴드 측벽을 더 포함하고, 가스 유입 매니폴드 측벽은 또한 가스 밀봉 측벽으로서 지칭되며, 가스 유입 매니폴드 측벽은 상부 벽(18)과 가스 공급장치(1) 사이에 가스 밀봉을 제공한다. 가스 유입 매니폴드 상부 벽(18), 측벽 및 가스 공급장치(1)는 결합되어 가스 유입 매니폴드의 내부 영역을 형성한다.During a process for manufacturing a semiconductor or other electronic device on a workpiece or substrate 3 , one or more gases are supplied to the deposition apparatus 2 through a gas inlet manifold. The gas inlet manifold includes a gas inlet manifold upper wall 18 and a gas supply 1 , wherein gas passes through a gas inlet orifice 28 of the gas inlet manifold upper wall 18 to the gas supply 1 . and the gas flows into the deposition device 2 through the gas supply device 1 . The gas inlet manifold further includes a gas inlet manifold sidewall, the gas inlet manifold sidewall also referred to as a gas sealing sidewall, the gas inlet manifold sidewall being disposed between the upper wall 18 and the gas supply 1 . Provides sealing. The gas inlet manifold top wall 18 , the sidewalls and the gas supply 1 are joined to form the interior region of the gas inlet manifold.
외부 가스 소스는 가스 유입 매니폴드 상부 벽(18)에 있는 하나 이상의 가스 유입 오리피스(28)로 공정 가스를 공급하며, 가스 유입 오리피스(28)를 통하여 공정 가스가 가스 유입 매니폴드의 내부 영역(26)으로 유동한다. 공정 가스는 가스 공급장치(1)에 있는 하나 이상의 통상적으로 수백 또는 수천개의 관통홀(13)을 통하여 가스 유입 매니폴드의 내부 영역(26)으로 부터 증착 장치(2)의 내부로 유동한다. An external gas source supplies process gas to one or more gas inlet orifices (28) in the gas inlet manifold upper wall (18) through which the process gas is directed to the interior region (26) of the gas inlet manifold (26). ) to flow. Process gases flow from the interior region 26 of the gas inlet manifold into the interior of the deposition apparatus 2 through one or more typically hundreds or thousands of through-holes 13 in the gas supply 1 .
가스 유입 매니폴드의 측벽 밀봉은 챔버 리드(16)의 내벽을 덮는 유전체 라이너(24)에 의해 이루어진다.The sidewall sealing of the gas inlet manifold is achieved by a dielectric liner 24 covering the inner wall of the chamber lid 16 .
가스 유입 매니폴드는 가스 유입 오리피스(28)의 직경보다 약간 더 큰 직경을 가지고 도시되지 않은 포스트에 의해 오리피스 아래 매달리는 원형 디스크(34)로 이루어지는 가스 유입 디플렉터(gas inlet deflector)를 포함한다. The gas inlet manifold includes a gas inlet deflector consisting of a circular disk 34 having a diameter slightly larger than the diameter of the gas inlet orifice 28 and suspended below the orifice by posts not shown.
커버(39)는 일반적으로 챔버 리드(16)의 상부에 구비될 수 있다. 커버(39)는 가스 유입 매니폴드 상부벽(18) 또는 가스 공급장치(1)에 외부 물질이 접촉하는 것을 방지한다. A cover 39 may generally be provided over the chamber lid 16 . The cover 39 prevents foreign substances from coming into contact with the gas inlet manifold upper wall 18 or the gas supply device 1 .
커버(39)와 가스 유입 매니폴드 상부벽(18) 사이에는 유전체 라이너(35)가 구비될 수 있다. 유전체 라이너(35)는 가스 유입 매니폴드 상부벽(18)의 상면의 주변부를 따라 구비될 수 있으며, 유전체 라이너의 일측은 가스 유입 매니폴드 상부벽(18)와 맞닿고 타측은 커버(29)와 맞닿으며 구비될 수 있다.A dielectric liner 35 may be provided between the cover 39 and the gas inlet manifold upper wall 18 . The dielectric liner 35 may be provided along the periphery of the upper surface of the gas inlet manifold upper wall 18 , and one side of the dielectric liner is in contact with the gas inlet manifold upper wall 18 and the other side is in contact with the cover 29 and Abutting can be provided.
증착 장치(2)의 부품은 챔버에서 수행되는 반도체 제조 프로세스를 오염시키지 않고 프로세스 가스에 의한 부식에 내성을 가지는 재료로 이루어져야 한다. 바람직하게 오링, 유전체 스페이서 및 라이너를 제외한 모든 부품은 알루미늄 또는 알루미늄 합금으로 이루어지는 것이 바람직하다.The components of the deposition apparatus 2 must be made of a material that does not contaminate the semiconductor manufacturing process performed in the chamber and is resistant to corrosion by the process gas. Preferably, all parts except for the O-ring, dielectric spacer and liner are made of aluminum or an aluminum alloy.
가스 공급장치(1)의 바디(10)는 원형 또는 사각형 등 다각의 형태로 형성될 수 있으며, 이하의 설명에서는 바디(10)의 형상이 원형인 예로 도시 및 설명하겠다.The body 10 of the gas supply device 1 may be formed in a polygonal shape, such as a circle or a rectangle, and in the following description, the body 10 will be illustrated and described as an example in which the shape of the body 10 is a circle.
바디(10)는 원형의 판의 형태로 형성될 수 있으며, 바디(10)의 외측면은 단차진 형상으로 형성될 수 있다. 바디(10)는 상면의 직경이 하면의 직경보다 크게 형성됨으로써, 바디(10)의 외측면이 단차진 형상을 가지게 되는 것이다. 바디(10)는 알루미늄 또는 알루미늄 합금의 재질로 이루어지는 것이 바람직하다. The body 10 may be formed in the form of a circular plate, and the outer surface of the body 10 may be formed in a stepped shape. The body 10 is formed so that the diameter of the upper surface is larger than the diameter of the lower surface, the outer surface of the body 10 is to have a stepped shape. The body 10 is preferably made of aluminum or an aluminum alloy.
도 2 내지 도 3에 도시된 바와 같이, 바디(10)는 관통홀(13)이 구비되는 제1영역(11)과, 제1영역(11)을 감싸며 구비되는 제2영역(12)으로 구성될 수 있다. 2 to 3 , the body 10 includes a first region 11 having a through hole 13 and a second region 12 surrounding the first region 11 . can be
제1영역(11)은 복수개의 관통홀(13)이 구비된 영역이다. 제1영역(11)은 바디(10)의 하면의 중심부에서부터 제2영역(12)이 시작되는 지점까지의 영역을 말한다. 다시 말해, 제1영역(11)은 제2영역(12)의 내측에 형성된 영역을 말한다. The first area 11 is an area provided with a plurality of through holes 13 . The first region 11 refers to a region from the center of the lower surface of the body 10 to a point where the second region 12 starts. In other words, the first region 11 refers to a region formed inside the second region 12 .
관통홀(13)은 제1영역(11)에서 바디(10)를 관통하며 형성될 수 있으며, 관통홀(13)은 제1영역(11)에 전반적으로 고르게 분포될 수 있다. 관통홀(13)은 바디(10)의 상부와 바디(10)의 하부를 연통시키는 역할을 하며, 가스는 관통홀(13)을 통해 바디(10)의 상부에서 바디(10)의 하부로 이동할 수 있다. The through-holes 13 may be formed to pass through the body 10 in the first region 11 , and the through-holes 13 may be evenly distributed throughout the first region 11 . The through hole 13 serves to communicate the upper portion of the body 10 with the lower portion of the body 10 , and the gas moves from the upper portion of the body 10 to the lower portion of the body 10 through the through hole 13 . can
제2영역(12)은 관통홀(13)이 구비되지 않은 영역이다. 제2영역(12)은 바디(10)의 하면의 최 외측에서부터 제1영역(11)이 시작되는 지점까지의 영역을 말한다. 다시 말해, 제2영역(12)은 제1영역(11)의 외측에서 제1영역(11)을 감싸는 영역을 말하는 것이다. 이러한 제2영역(12)에는 일정한 깊이를 가지는 띠 형태의 홈(14)이 구비될 수 있다. The second region 12 is a region in which the through hole 13 is not provided. The second region 12 refers to a region from the outermost surface of the lower surface of the body 10 to a point where the first region 11 starts. In other words, the second region 12 refers to a region surrounding the first region 11 from the outside of the first region 11 . A band-shaped groove 14 having a predetermined depth may be provided in the second region 12 .
홈(14)은 제2영역(12)에서 제1영역(11)을 감싸는 형상으로 구비될 수 있다.The groove 14 may be provided in a shape surrounding the first region 11 in the second region 12 .
홈(14)은 바디(10)의 하면에서 상측으로 볼록하게 형성될 수 있다. 이러한 홈(14)의 내부를 따라 구속 부재(20)와 마감 부재(30)가 순차적으로 삽입될 수 있다. 홈(14)은 개구의 입구 폭이 개구의 상부측의 폭보다 크게 형성될 수 있다. 즉, 홈(14)은 구속 부재(20)가 삽입되는 내측의 폭이 마감 부재(30)가 삽입되는 외측의 폭보다 작게 형성될 수 있는 것이다. The groove 14 may be formed to be convex upward from the lower surface of the body 10 . The constraining member 20 and the closing member 30 may be sequentially inserted along the inside of the groove 14 . The groove 14 may be formed so that the entrance width of the opening is larger than the width of the upper side of the opening. That is, the groove 14 may be formed so that an inner width into which the restraining member 20 is inserted is smaller than an outer width into which the closing member 30 is inserted.
구속 부재(20)는 홈(14)의 형상과 동일한 형상으로 형성될 수 있다. 다시 말해, 구속 부재(20)는 일체형의 금속띠 형상으로 형성될 수 있다. 구속 부재(20)는 바디(10)의 하면이 열에 의해 열팽창 변형이 이루어지는 것을 방지하는 역할을 한다. 따라서, 구속 부재(20)는 열팽창계수가 바디(10)의 열팽창계수보다 작은 재질로 이루어지는 것이 바람직하다. 구속 부재(20)는 SUS 재질인 것이 바람직하다.The constraining member 20 may have the same shape as the shape of the groove 14 . In other words, the constraining member 20 may be formed in an integral metal band shape. The restraining member 20 serves to prevent the lower surface of the body 10 from being deformed by thermal expansion due to heat. Therefore, the constraining member 20 is preferably made of a material having a coefficient of thermal expansion smaller than that of the body 10 . The constraining member 20 is preferably made of SUS material.
이와 다르게, 구속부재(20)는 열팽창계수가 낮은 파우더 성분을 포함한 복합 성형물로 이루어질 수 있다. 이 경우, 구속부재(20)는 파우더의 밀도가 균일하게 분포될 수 있으나, 구속부재(20)의 상부 및 하부에서 파우더의 밀도가 다를 수 있다. 다시 말해, 구속부재(20)의 상부에서의 파우더 밀도가 구속부재(20)의 하부에서의 파우더 밀도보다 더 높을 수 있고, 이와 반대로, 구속부재(20)의 하부에서의 파우더 밀도가 구속부재(20)의 상부에서의 파우더 밀도보다 더 높을 수 있다. Alternatively, the constraining member 20 may be formed of a composite molding including a powder component having a low coefficient of thermal expansion. In this case, the density of the powder may be uniformly distributed in the constraining member 20 , but the density of the powder may be different in the upper and lower portions of the constraining member 20 . In other words, the powder density in the upper portion of the restraining member 20 may be higher than the powder density in the lower portion of the restraining member 20 , and on the contrary, the powder density in the lower portion of the restraining member 20 is 20) may be higher than the powder density at the top.
마감 부재(30)는 구속 부재(20)와 동일한 형상인 일체형의 금속의 때 형상으로 형성될 수 있다. 마감 부재(30)는 홈(14)의 개구에 삽입되어 홈(14)의 개구를 덮는다. 마감 부재(30)는 아르곤용접, 전자빔, 브레이징접합 또는 마찰 교반용접 등의 방법으로 바디(10)와 결합될 수 있다. 마감 부재(30)의 폭은 구속 부재(20)의 폭보다 크게 형성될 수 있다. The closing member 30 may be formed in the same shape as the constraining member 20 and may be formed in an integral metal grime shape. The closing member 30 is inserted into the opening of the groove 14 to cover the opening of the groove 14 . The finishing member 30 may be coupled to the body 10 by a method such as argon welding, electron beam welding, brazing bonding, or friction stir welding. The width of the closing member 30 may be greater than the width of the constraining member 20 .
마감 부재(30)는 구속 부재(20)의 하측에서 바디(10)와 결합됨으로써 홈(14)에 안착된 구속 부재(20)가 바디(10)의 하부 방향으로 이탈되는 것을 방지할 수 있다. 마감 부재(30)는 바디(10)와 동일한 재질로 이루어지는 것이 바람직하다. 일예로, 마감 부재(30)는 알루미늄 또는 알루미늄 합금 재질로 이루어질 수 있다. The closing member 30 is coupled to the body 10 at the lower side of the constraining member 20 to prevent the constraining member 20 seated in the groove 14 from being separated in the lower direction of the body 10 . The closing member 30 is preferably made of the same material as the body 10 . For example, the finishing member 30 may be made of aluminum or an aluminum alloy material.
도 4에 도시된 바와 같이, 구속 부재(20)와 마감 부재(30)는 바디(10)의 하부에서 바디(10)에 구비된 홈(14)에 순차적으로 안착될 수 있다. 이때, 구속 부재(20)는 바디(10)의 상면측 보다 하면측에 가깝게 위치할 수 있다. As shown in FIG. 4 , the restraining member 20 and the closing member 30 may be sequentially seated in the groove 14 provided in the body 10 at the lower portion of the body 10 . In this case, the restraining member 20 may be located closer to the lower surface side than the upper surface side of the body 10 .
구체적으로, 홈(14)은 바디(10)의 중심선(CL)을 기준으로 중심선(CL)보다 낮은 위치에 홈(14)의 중심선이 위치하도록 구비될 수 있다. 홈(14)은 바디(10)의 하면에서 바디(10)의 상측 방향으로 볼록하게 형성되는데, 이때, 홈(14)의 중심선의 높이가 바디(10)의 중심선(CL) 보다 낮거나 같은 위치에 위치할 수 있는 것이다. 따라서, 홈(14) 내부에 구비되는 구속 부재(20)의 중심선의 위치는 바디(10)의 중심선(CL) 보다 낮은 위치에 위치하는 것이다.Specifically, the groove 14 may be provided such that the center line of the groove 14 is located at a position lower than the center line CL with respect to the center line CL of the body 10 . The groove 14 is formed convexly in the upper direction of the body 10 from the lower surface of the body 10 . At this time, the height of the center line of the groove 14 is lower than or equal to the center line CL of the body 10 . can be located in Accordingly, the position of the center line of the constraining member 20 provided in the groove 14 is located at a lower position than the center line CL of the body 10 .
이하, 본 발명의 바람직한 제1실시 예에 따른 가스 공급장치(1)의 효과에 대해 설명한다. Hereinafter, the effect of the gas supply device 1 according to the first preferred embodiment of the present invention will be described.
가스 공급장치(1)는 제1영역(11)의 외측에서 제1영역(11)을 감싸는 영역인 제2영역(12)에 바디(10)의 열팽창계수 보다 열팽창계수가 낮은 구속 부재(20)를 구비함으로써, 열팽창에 의한 변형을 허용하지 않는다. The gas supply device 1 has a constraint member 20 having a lower coefficient of thermal expansion than the coefficient of thermal expansion of the body 10 in the second region 12 , which is a region surrounding the first region 11 from the outside of the first region 11 . By providing a, deformation due to thermal expansion is not allowed.
도 1에 도시된 바와 같이, 바디(10)는 증착 장치(2) 내에서 수행되는 프로세스에 의해 발생되는 열에 의해 가열될 수 있다. 바디(10)는 서셉터(6)에 내장된 히터에 의해 하측면에 열이 가해지고, 바디(10)의 하측면이 외측방향으로 팽창되는 열팽창 변형이 이루어지면서, 제1영역(11)에 구비된 관통홀(13)의 피치 간격이 벌어지도록 하는 힘을 받는다. As shown in FIG. 1 , the body 10 may be heated by heat generated by a process performed in the deposition apparatus 2 . Heat is applied to the lower side of the body 10 by a heater built into the susceptor 6 , and thermal expansion deformation in which the lower side of the body 10 expands outwardly is made, in the first region 11 . A force is applied so that the pitch interval of the provided through-holes 13 is widened.
이때, 구속 부재(20)는 바디(10)의 제1영역(11)의 외측면인 제2영역(12)에 구비되어 제1영역(11)이 열에 의해 팽창되는 것을 방지할 수 있다. 즉, 구속 부재(20)는 원형의 금속띠 형상으로 형성되어 제1영역(11)의 외측면에서 제1영역(11)을 구속시킴으로써 제1영역(11)이 외측방향으로 팽창되는 것을 억제하는 것이다. 즉, 제1영역(11)을 구속하고 있는 구속 부재(20)가 열변형이 이루어 지지 않는 한 바디(10) 또한 열변형이 이루어 지지 않는 것이다. In this case, the restraining member 20 may be provided in the second region 12 that is the outer surface of the first region 11 of the body 10 to prevent the first region 11 from being expanded by heat. That is, the constraining member 20 is formed in the shape of a circular metal band to restrain the first region 11 from the outer surface of the first region 11 to prevent the first region 11 from expanding in the outward direction. will be. That is, unless the constraining member 20 constraining the first region 11 is thermally deformed, the body 10 is also not thermally deformed.
따라서, 가스 공급장치(1)는 바디(10)의 열팽창계수보다 작은 열팽창계수를 가진 구속 부재(20)를 바디 내부에 매립하여 구비함으로써 바디(10)의 열팽창에 의한 열 변형을 허용하지 않는 것이다. Therefore, the gas supply device 1 does not allow thermal deformation due to thermal expansion of the body 10 by embedding the constraining member 20 having a thermal expansion coefficient smaller than the thermal expansion coefficient of the body 10 by embedding it in the body. .
본 발명의 바람직한 제2실시 예에 따른 가스 공급장치(1a)Gas supply device (1a) according to a second preferred embodiment of the present invention
이하, 도 5를 참조하여 본 발명의 바람직한 제2실시 예에 따른 가스 공급장치(1a)에 대해 설명한다. Hereinafter, a gas supply device 1a according to a second preferred embodiment of the present invention will be described with reference to FIG. 5 .
본 발명의 바람직한 제2실시 예에 따른 가스 공급장치(1a)는 전술한 본 발명의 바람직한 제1실시 예에 따른 가스 공급장치(1)에 제2구속 부재(22)가 더 포함되어 구성될 수 있다. 따라서, 본 발명의 바람직한 제2실시 예에 따른 가스 공급장치(1a)의 다른 구성들은 전술한 본 발명의 바람직한 제1실시 예에 따른 가스 공급장치(1)의 설명이 적용될 수 있으며, 중복되는 설명은 생략한다. The gas supply device 1a according to the second preferred embodiment of the present invention may be configured by further including a second restraining member 22 in the gas supply device 1 according to the first preferred embodiment of the present invention. have. Therefore, the description of the gas supply apparatus 1 according to the first preferred embodiment of the present invention described above may be applied to other configurations of the gas supply apparatus 1a according to the second preferred embodiment of the present invention, and overlapping descriptions is omitted.
도 5에 도시된 바와 같이, 가스 공급장치(1a)는 구속 부재(20)가 복수개 구비될 수 있다.As shown in FIG. 5 , the gas supply device 1a may include a plurality of restraining members 20 .
구속 부재(20)는 홈(14)의 내부에 복수개가 구비될 수 있다. 복수개의 구속 부재(20)는 홈(14)의 내부에서 수직방향으로 적층되어 구비될 수 있다. A plurality of restraining members 20 may be provided in the groove 14 . The plurality of constraining members 20 may be vertically stacked inside the groove 14 .
일 예로, 도 5에 도시된 바와 같이, 구속 부재(20)는 제1구속 부재(21)와 제2구속 부재(22)로 구성될 수 있다. For example, as shown in FIG. 5 , the constraining member 20 may include a first constraining member 21 and a second constraining member 22 .
제1구속 부재(21)는 홈(14)의 내부에서 제2구속 부재(22) 하부에 구비될 수 있다. 제1구속 부재(21)는 제2구속 부재(22)와 마감 부재(30) 사이에 구비될 수 있다. 제1구속 부재(21)는 상면이 제2구속 부재(22)의 하면과 맞닿을 수 있고, 제1구속 부재(21)의 하면은 마감 부재(30)와 맞닿을 수 있다. The first restraining member 21 may be provided under the second restraining member 22 inside the groove 14 . The first restraining member 21 may be provided between the second restraining member 22 and the closing member 30 . The upper surface of the first constraining member 21 may be in contact with the lower surface of the second constraining member 22 , and the lower surface of the first constraining member 21 may be in contact with the closing member 30 .
제1구속 부재(21)의 열팽창계수와 제2구속 부재(22)의 열팽창계수는 서로 다를 수 있다.The thermal expansion coefficient of the first constraining member 21 and the thermal expansion coefficient of the second constraining member 22 may be different from each other.
제1구속 부재(21)는 그 열팽창계수가 제2구속 부재(22)의 열팽창계수보다 작을 수 있다. The first constraining member 21 may have a coefficient of thermal expansion smaller than that of the second constraining member 22 .
제2구속 부재(22)는 홈(14)의 내부에서 제1구속 부재(21)의 상부에 구비될 수 있다. 제2구속 부재(22)는상면이 바디(10)와 맞닿을 수 있고, 제2구속 부재(22)의 하면은 제1구속 부재(21)의 상면과 맞닿을 수 있다. 제2구속 부재(22)는 그 열팽창계수가 제1구속 부재(21)의 열팽창계수보다 크고 바디(10)의 열팽창계수보다 작을 수 있다. The second constraining member 22 may be provided on the first constraining member 21 inside the groove 14 . The upper surface of the second restraining member 22 may be in contact with the body 10 , and the lower surface of the second restraining member 22 may be in contact with the upper surface of the first restraining member 21 . The second constraining member 22 may have a coefficient of thermal expansion greater than the coefficient of thermal expansion of the first constraining member 21 and smaller than the coefficient of thermal expansion of the body 10 .
다시 말해, 제1구속 부재(21), 제2구속 부재(22) 및 바디(10)의 열팽창계수는 제1구속 부재(21)의 열팽창계수가 가장 작고, 바디(10)의 열팽창계수가 가장 클 수 있는 것이다. In other words, the coefficient of thermal expansion of the first constraining member 21 , the second constraining member 22 and the body 10 has the smallest coefficient of thermal expansion of the first constraining member 21 , and the thermal expansion coefficient of the body 10 is the most it can be big
이처럼, 홈(14)의 내부에서 바디(10)의 하부에서 상부로 갈수록 그 열팽창계수가 순차적으로 커짐으로서, 바디(10)가 열 변형에 의해 변형될 때 발생될 수 있는 전단 파괴를 방지할 수 있다. In this way, as the coefficient of thermal expansion increases sequentially from the lower part to the upper part of the body 10 in the interior of the groove 14, shear failure that may occur when the body 10 is deformed by thermal deformation can be prevented. have.
홈(14) 내부에 상대적으로 열팽창계수가 작은 제1구속 부재(21)와 상대적으로 열팽창계수가 큰 바디(10) 사이에 제1구속 부재(21) 보다 열팽창계수가 크고 바디(10) 보다 열팽창계수가 작은 제2구속 부재(22)를 구비함으로써, 바디(10)와 제1구속 부재(21)간의 열팽창계수의 차이를 줄일 수 있다. Between the first constraining member 21 having a relatively small coefficient of thermal expansion and the body 10 having a relatively large coefficient of thermal expansion in the groove 14, the thermal expansion coefficient is greater than that of the first constraining member 21 and the thermal expansion is greater than that of the body 10 By providing the second constraining member 22 having a small coefficient, the difference in the coefficient of thermal expansion between the body 10 and the first constraining member 21 may be reduced.
구체적으로, 바디(10)가 열 팽창 시 제1구속 부재(21) 및 제2구속 부재(22)는 바디(10)가 열 팽창으로 인해 변형되는 것을 구속함으로써 변형을 허용하지 않는다. 이때, 제1구속 부재(21)와 바디(10)의 열팽창계수 간의 차이가 클 경우, 바디(10)에 전단 파괴 현상이 발생할 수 있다. Specifically, when the body 10 is thermally expanded, the first constraining member 21 and the second constraining member 22 do not allow deformation by restraining the body 10 from being deformed due to thermal expansion. At this time, when the difference between the coefficients of thermal expansion of the first constraining member 21 and the body 10 is large, a shear failure phenomenon may occur in the body 10 .
따라서, 열팽창계수가 작은 제1구속 부재(21)와 열팽창계수가 큰 바디(10) 사이에 제1구속 부재(21)보다 상대적으로 열팽창계수가 큰 제2구속 부재(22)를 구비함으로써, 제2구속 부재(22)가 바디(10)의 열팽창에 의한 열변형을 상대적으로 흡수해주면서 바디(10)에서 발생될 수 있는 전단 파괴 현상을 방지할 수 있는 것이다. Therefore, by providing a second constraining member 22 having a relatively large coefficient of thermal expansion than the first constraining member 21 between the first constraining member 21 having a small thermal expansion coefficient and the body 10 having a large thermal expansion coefficient, The second constraint member 22 can relatively absorb thermal deformation due to thermal expansion of the body 10 and prevent shear fracture that may occur in the body 10 .
이와는 다르게, 제1구속 부재(21)의 열팽창계수는 제2구속 부재(22)의 열팽창계수보다 클 수 있다. Alternatively, the coefficient of thermal expansion of the first constraining member 21 may be greater than that of the second constraining member 22 .
이처럼, 제1, 2구속부재(21, 22)의 열팽창계수를 서로 달리해서 구속 부재(20)와 바디(10)간의 급격한 열팽창계수의 차이로 인해 바디(10)에서 발생될수 있는 전단파괴를 방지할 수 있다.As such, the first and second constraining members 21 and 22 have different coefficients of thermal expansion to prevent shear failure that may occur in the body 10 due to the difference in the abrupt thermal expansion coefficient between the constraining member 20 and the body 10 . can do.
이처럼, 복수개의 구속 부재(20)는 열팽창계수가 서로 다를 수 있으며, 복수의 구속 부재(20) 중 적어도 하나는 금속물질, 복합 성형물 또는 충진물 중 적어도 하나로 구성될 수 있다. 또한, 복수개의 구속 부재(20)는 부피, 높이, 면적 또는 형상이 서로 다를 수 있으며, 물리적 특성, 화학적 특성 및 열적 특성이 다른 물질로 구성될 수 있다.As such, the plurality of constraining members 20 may have different coefficients of thermal expansion, and at least one of the plurality of constraining members 20 may be composed of at least one of a metal material, a composite molding, or a filler. In addition, the plurality of constraining members 20 may have different volumes, heights, areas, or shapes, and may be made of materials having different physical properties, chemical properties, and thermal properties.
본 발명의 바람직한 제3실시 예에 따른 가스 공급장치(1b)Gas supply device (1b) according to a third preferred embodiment of the present invention
이하, 도 6을 참조하여 본 발명의 바람직한 제3실시 예에 따른 가스 공급장치(1b)에 대해 설명한다. Hereinafter, a gas supply device 1b according to a third preferred embodiment of the present invention will be described with reference to FIG. 6 .
본 발명의 바람직한 제3실시 예에 따른 가스 공급장치(1b)는 전술한 본 발명의 바람직한 제1실시 예에 따른 가스 공급장치(1)의 구속 부재(20a)의 형상이 다르게 형성된다. 따라서, 본 발명의 바람직한 제3실시 예에 따른 가스 공급장치(1b)의 다른 구성들은 전술한 본 발명의 바람직한 제1실시 예에 따른 가스 공급장치(1)의 설명이 적용될 수 있으며, 중복되는 설명은 생략한다. In the gas supply apparatus 1b according to the third preferred embodiment of the present invention, the shape of the constraining member 20a of the gas supply apparatus 1 according to the first preferred embodiment of the present invention is different. Accordingly, the description of the gas supply apparatus 1 according to the first preferred embodiment of the present invention described above may be applied to other configurations of the gas supply apparatus 1b according to the third preferred embodiment of the present invention, and overlapping descriptions is omitted.
도 6에 도시된 바와 같이, 가스 공급장치(1b)는 구속 부재(20a)가 이격된 호의 형상으로 구비될 수 있다.As shown in FIG. 6 , the gas supply device 1b may be provided in an arc shape in which the constraining members 20a are spaced apart.
홈(14)은 바디(10)의 하면에서 제1영역(11)의 둘레를 따라 이격된 호의 형태로 구비될 수 있다. 홈(14)은 제1영역(11)의 둘레를 따라 복수개 구비될 수 있는 것이다. 이러한 홈(14)에는 구속 부재(20a)와 마감 부재(30a)가 홈(14)과 동일한 형상으로 구비될 수 있다. The groove 14 may be provided in the form of an arc spaced apart from the lower surface of the body 10 along the circumference of the first region 11 . A plurality of grooves 14 may be provided along the circumference of the first region 11 . The constraint member 20a and the closing member 30a may be provided in the groove 14 to have the same shape as the groove 14 .
구속 부재(20a)를 원형의 띠 형상으로 형성하여 홈(14)에 삽입할 경우, 구속 부재(20a)의 치수에 작은 오차가 발생하더라도 홈(14)에 삽입하기가 어려울 수 있다. When the restraining member 20a is formed in a circular band shape and inserted into the groove 14 , it may be difficult to insert the restraining member 20a into the groove 14 even if a small error occurs in the dimension of the restraining member 20a.
하지만, 제1영역(11)의 둘레를 따라 홈(14)을 호의 형태로 복수개 형성하고, 홈(14)의 형상과 동일하게 구속 부재(20a)를 형성하여 삽입하면, 보다 쉽게 홈(14)에 구속 부재(20a)를 삽입할 수 있는 것이다. However, if a plurality of grooves 14 are formed in the shape of an arc along the circumference of the first region 11 and the constraint member 20a is formed and inserted in the same way as the shape of the groove 14, the groove 14 is more easily It is possible to insert the constraining member (20a) to the.
따라서, 제1영역(11)의 둘레를 따라 복수개의 홈(14)을 형성하여 구속 부재(20a)를 구비함으로써 바디(10)의 열변형을 허용하지 않음과 동시에 보다 쉽게 구속 부재(20a)를 홈(14)에 삽입할 수 있다.Accordingly, by providing the constraining member 20a by forming a plurality of grooves 14 along the periphery of the first region 11 , thermal deformation of the body 10 is not allowed and the constraining member 20a can be more easily removed at the same time. It can be inserted into the groove (14).
본 발명의 바람직한 제4실시 예에 따른 가스 공급장치(1c)Gas supply device (1c) according to a fourth preferred embodiment of the present invention
이하, 도 7을 참조하여 본 발명의 바람직한 제4실시 예에 따른 가스 공급장치(1c)에 대해 설명한다.Hereinafter, a gas supply device 1c according to a fourth preferred embodiment of the present invention will be described with reference to FIG. 7 .
본 발명의 바람직한 제4실시 예에 따른 가스 공급장치(1c)는 전술한 본 발명의 바람직한 제1실시 예에 따른 가스 공급장치(1)의 구속 부재(20b)는 다른 방식으로 구성될 수 있다. 따라서, 본 발명의 바람직한 제4실시 예에 따른 가스 공급장치(1c)의 다른 구성들은 전술한 본 발명의 바람직한 제1실시 예에 따른 가스 공급장치(1)의 설명이 적용될 수 있으며, 중복되는 설명은 생략한다. In the gas supply apparatus 1c according to the fourth preferred embodiment of the present invention, the constraint member 20b of the gas supply apparatus 1 according to the first preferred embodiment of the present invention may be configured in a different manner. Accordingly, the description of the gas supply device 1 according to the first preferred embodiment of the present invention described above may be applied to other configurations of the gas supply device 1c according to the fourth preferred embodiment of the present invention, and overlapping descriptions is omitted.
도 7에 도시된 바와 같이, 구속 부재(20b)는 홈(14)의 내부에 금속 물질이 충진되어 구비될 수 있다. 다시 말해, 구속 부재(20b)는 홈(14)이 형성된 후 액체 상태의 금속 물질을 홈(14)의 내부에 충진 시킨 후 금속 물질을 고체화함으로써 제1영역(11)의 주변영역에 구속 부재(20b)를 구비할 수 있는 것이다. As shown in FIG. 7 , the restraining member 20b may be provided by filling the inside of the groove 14 with a metal material. In other words, the constraining member 20b is formed in the peripheral region of the first region 11 by filling the metal material in a liquid state into the groove 14 and then solidifying the metal material after the groove 14 is formed. 20b) can be provided.
이와 같이, 홈(14)의 내부에 금속 물질을 충진하는 방식으로 구속 부재(20b)를 구비함으로써 형상에 구애받지 않고 다양한 형상으로 구속부재를 구비할 수 있다.As such, by providing the constraining member 20b in such a way that the metal material is filled in the groove 14, the constraining member can be provided in various shapes regardless of the shape.
본 발명의 바람직한 제5실시 예에 따른 가스 공급장치(1d)Gas supply device (1d) according to a fifth preferred embodiment of the present invention
본 발명의 바람직한 제5실시 예에 따른 가스 공급장치(1d)는 전술한 본 발명의 바람직한 제1실시 예에 따른 가스 공급장치(1)에 열선(40)이 더 포함되어 구성될 수 있다. 따라서, 본 발명의 바람직한 제5실시 예에 따른 가스 공급장치(1d)의 다른 구성들은 전술한 본 발명의 바람직한 제1실시 예에 따른 가스 공급장치(1)의 설명이 적용될 수 있으며, 중복되는 설명은 생략한다. The gas supply device 1d according to the fifth preferred embodiment of the present invention may be configured by further including the heating wire 40 in the gas supply device 1 according to the first preferred embodiment of the present invention. Accordingly, the description of the gas supply apparatus 1 according to the first preferred embodiment of the present invention described above may be applied to other configurations of the gas supply apparatus 1d according to the fifth preferred embodiment of the present invention, and overlapping descriptions is omitted.
도 8에 도시된 바와 같이, 본 발명의 바람직한 제5실시 예에 따른 가스 공급장치(1d)는 구속 부재(20)의 상부에 열선(40)이 구비될 수 있다. As shown in FIG. 8 , in the gas supply device 1d according to the fifth exemplary embodiment of the present invention, a heating wire 40 may be provided on an upper portion of the restraining member 20 .
열선(40)은 홈(14)의 내부에서 구속 부재(20c)의 상부에 구비될 수 있다. 다시 말해, 열선(40)은 상면이 바디(10)와 맞닿을 수 있고, 하면이 구속 부재(20c)의 상면과 맞닿을 수 있다. The heating wire 40 may be provided on the upper portion of the restraining member 20c inside the groove 14 . In other words, the upper surface of the heating wire 40 may be in contact with the body 10 and the lower surface may be in contact with the upper surface of the restraining member 20c.
열선(40)은 원형, 사각형 등 다각의 형태의 단면을 가진 원형의 띠의 형상으로 형성될 수 있다. 일 예로, 도 7(a)에 도시된 바와 같이, 열선(40)은 원형의 단면을 가진 원형의 띠 형상으로 형성될 수 있다. 이때, 열선(40)과 맞닿는 구속 부재(20c)의 상면은 내측으로 오목하게 안착홈이 형성될 수 있다. 열선(40)은 구속 부재(20c)의 안착홈에 안착되어 구비될 수 있는 것이다.The heating wire 40 may be formed in the shape of a circular band having a cross section of a polygonal shape, such as a circle or a square. For example, as shown in FIG. 7A , the heating wire 40 may be formed in a circular band shape having a circular cross-section. At this time, the upper surface of the restraining member 20c in contact with the heating wire 40 may have a seating groove concave inwardly. The heating wire 40 may be provided while being seated in the seating groove of the restraining member 20c.
이와 다르게, 도 8(b)에 도시된 바와 같이, 열선(40)은 홈(14)과 관통홀(13) 사이에 구비될 수 있다.Alternatively, as shown in FIG. 8(b) , the heating wire 40 may be provided between the groove 14 and the through hole 13 .
이처럼, 구속 부재(20c)의 상면 또는 측면에 열선(40)을 구비함에 따라, 바디(10)의 하부의 온도와 상부의 온도차를 줄임으로서 바디(10)의 열팽창에 의한 열변형을 방지할 수 있다. As such, by providing the heating wire 40 on the upper surface or the side surface of the restraining member 20c, by reducing the temperature difference between the temperature of the lower portion and the upper portion of the body 10, thermal deformation due to thermal expansion of the body 10 can be prevented. have.
본 발명의 바람직한 제6실시 예에 따른 가스 공급장치(1e)Gas supply device (1e) according to a sixth preferred embodiment of the present invention
이하, 도 9를 참조하여 본 발명의 바람직한 제6실시 예에 따른 가스 공급장치(1e)에 대해 설명한다. Hereinafter, a gas supply device 1e according to a sixth preferred embodiment of the present invention will be described with reference to FIG. 9 .
본 발명의 바람직한 제6실시 예에 따른 가스 공급장치(1e)는 전술한 본 발명의 바람직한 제1실시 예에 따른 가스 공급장치(1)에 홈(14) 및 구속 부재(20)가 복수개로 구성될 수 있다. 따라서, 본 발명의 바람직한 제6실시 예에 따른 가스 공급장치(1e)의 다른 구성들은 전술한 본 발명의 바람직한 제1실시 예에 따른 가스 공급장치(1)의 설명이 적용될 수 있으며, 중복되는 설명은 생략한다.The gas supply device 1e according to the sixth preferred embodiment of the present invention includes a plurality of grooves 14 and a constraining member 20 in the gas supply device 1 according to the first preferred embodiment of the present invention. can be Accordingly, the description of the gas supply apparatus 1 according to the first preferred embodiment of the present invention described above may be applied to other configurations of the gas supply apparatus 1e according to the sixth preferred embodiment of the present invention, and overlapping descriptions is omitted.
도 9에 도시된 바와 같이, 본 발명의 바람직한 제6실시 예에 따른 가스 공급장치(1e)는 홈(14)이 바디(10)의 수평방향으로 복수개 구비될 수 있다.As shown in FIG. 9 , in the gas supply device 1e according to the sixth preferred embodiment of the present invention, a plurality of grooves 14 may be provided in the horizontal direction of the body 10 .
홈(14)은 제2영역(12)에 수평방향으로 복수개 구비될 수 있다. 홈(14)은 서로 다른 외경을 가지며 복수개 구비되고, 각각의 홈(14) 중 어느 것 하나에는 구속 부재(20)가 구비될 수 있다.A plurality of grooves 14 may be provided in the second region 12 in a horizontal direction. The grooves 14 have different outer diameters and are provided in plurality, and a restraining member 20 may be provided in any one of the respective grooves 14 .
구체적으로, 제2영역(12)에 2개의 홈(14)이 구비될 수 있다. 도 9(a)에 도시된 바와 같이, 2개의 홈(14) 모두에 구속 부재(20)가 구비될 수 있다. Specifically, two grooves 14 may be provided in the second region 12 . As shown in FIG. 9( a ), the constraining member 20 may be provided in both of the two grooves 14 .
이와 다르게, 도 9(b)에 도시된 바와 같이, 2개의 홈(14) 중 하나의 홈(14)에만 구속 부재(20)가 구비될 수 있다.Alternatively, as shown in FIG. 9( b ), the restraining member 20 may be provided in only one of the two grooves 14 .
또한, 제2영역(12)에 3개의 홈(14)이 구비될 수 있으며, 도 9(c)에 도시된 바와 같이, 3개의 홈(14) 중 2개의 홈(14)에 구속 부재(20)가 구비될 수 있다. In addition, three grooves 14 may be provided in the second region 12 , and as shown in FIG. 9( c ), the restraining member 20 is provided in two grooves 14 among the three grooves 14 . ) may be provided.
즉, 복수개의 홈(14) 중 내측에 구비된 홈(14)에 제1구속 부재(20a)가 구비될 수 있고, 외측과 내측 사이에 구비된 홈(14)에 제2구속 부재(20b)가 구비될 수 있다. That is, the first constraining member 20a may be provided in the groove 14 provided on the inner side of the plurality of grooves 14, and the second constraining member 20b may be provided in the groove 14 provided between the outer side and the inner side. may be provided.
이처럼, 홈(14)을 바디(10)의 수평 방향으로 복수개 구비함으로써, 바디(10)의 열팽창에 의한 열 변형을 보다 확실하게 허용하지 않을 수 있다. As such, by providing a plurality of grooves 14 in the horizontal direction of the body 10 , thermal deformation due to thermal expansion of the body 10 may not be more reliably allowed.
또한, 홈(14)을 복수개 구비한 후 구속 부재(20)를 선택적으로 홈(14) 내부에 구비함으로써, 증착 장치(2)의 내부에 온도에 따라 구속 부재(20)의 개수를 유동적으로 변화시켜 바디(10)의 열팽창에 의한 열 변형을 효과적으로 대처할 수 있다.In addition, by providing a plurality of grooves 14 and selectively providing the constraining members 20 inside the grooves 14 , the number of constraining members 20 is flexibly changed according to the temperature inside the deposition apparatus 2 . Thus, it is possible to effectively cope with thermal deformation due to thermal expansion of the body 10 .
전술한 바와 같이, 본 발명의 바람직한 실시 예를 참조하여 설명하였지만, 해당 기술분야의 통상의 기술자는 하기의 특허 청구범위에 기재된 본 발명의 사상 및 영역으로부터 벗어나지 않는 범위 내에서 본 발명을 다양하게 수정 또는 변형하여 실시할 수 있다.As described above, although described with reference to preferred embodiments of the present invention, those skilled in the art can variously modify the present invention within the scope without departing from the spirit and scope of the present invention described in the claims below. Or it can be carried out by modification.
[부호의 설명][Explanation of code]
1, 1a, 1b, 1c, 1d, 1e: 가스 공급 장치1, 1a, 1b, 1c, 1d, 1e: gas supply device
10: 가스 공급장치10: gas supply
20, 20a, 20b, 20c: 구속 부재20, 20a, 20b, 20c: constraint member
30: 마감 부재30: no finish
40: 열선40: hot wire

Claims (8)

  1. 관통홀이 구비된 제1영역과, 상기 제1영역의 외측에서 상기 제1영역을 감싸는 형태로 홈이 구비된 제2영역을 포함하는 바디; 및A body comprising: a body including a first area having a through hole and a second area having a groove in a shape surrounding the first area from the outside of the first area; and
    상기 홈에 구비되고 상기 바디의 열팽창계수 보다 작은 열팽창계수를 가지면서 상기 바디의 열변형을 허용하지 않도록 하는 구속 부재;를 포함하는 가스 공급장치.and a restraining member provided in the groove and having a thermal expansion coefficient smaller than the thermal expansion coefficient of the body and not allowing thermal deformation of the body.
  2. 제1항에 있어서,According to claim 1,
    상기 구속 부재는 상기 바디의 상면측 보다 하면측에 보다 가깝게 위치하는 가스 공급장치.The constraining member is a gas supply device located closer to the lower surface side than the upper surface side of the body.
  3. 제1항에 있어서,According to claim 1,
    상기 구속 부재는 일체형의 금속띠로 구비되는 가스 공급장치.The constraining member is a gas supply device provided with an integral metal band.
  4. 제1항에 있어서,According to claim 1,
    상기 구속 부재는 상기 홈 내부에 복수개 구비되는 가스 공급장치.The constraining member is a gas supply device provided in plurality in the groove.
  5. 제1항에 있어서,According to claim 1,
    상기 홈은 상기 제1영역의 둘레를 따라 이격된 호의 형태로 구비되며,The groove is provided in the form of an arc spaced apart along the circumference of the first region,
    상기 홈 각각에 상기 구속 부재가 구비되는 가스 공급장치.A gas supply device in which the constraining member is provided in each of the grooves.
  6. 제1항에 있어서,According to claim 1,
    상기 구속 부재는 금속물질이 충진되는 가스 공급장치.The constraining member is a gas supply device filled with a metal material.
  7. 제1항에 있어서,According to claim 1,
    상기 구속 부재의 상부에 열선이 구비되는 가스 공급장치.A gas supply device provided with a heating wire on the upper portion of the restraining member.
  8. 관통홀이 구비된 제1영역과, 상기 제1영역의 외측에서 상기 제1영역을 감싸는 형태로 홈이 구비된 제2영역을 포함하는 바디와 상기 홈에 구비되고 상기 바디의 열팽창계수 보다 작은 열팽창계수를 가지면서 상기 바디의 열변형을 허용하지 않도록 하는 구속 부재를 포함하는 가스 공급장치; 및A body including a first region having a through hole and a second region having a groove in a shape surrounding the first region from the outside of the first region, and a thermal expansion provided in the groove and smaller than the coefficient of thermal expansion of the body a gas supply device including a restraining member having a coefficient and not allowing thermal deformation of the body; and
    내부에 히터를 구비한 서셉터;를 포함하는 증착 장치.A deposition apparatus comprising a; a susceptor having a heater therein.
PCT/KR2021/001977 2020-02-18 2021-02-16 Gas supply device and deposition device comprising same WO2021167325A1 (en)

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