WO2021164416A1 - X-ray detector and preparation method therefor - Google Patents

X-ray detector and preparation method therefor Download PDF

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Publication number
WO2021164416A1
WO2021164416A1 PCT/CN2020/139259 CN2020139259W WO2021164416A1 WO 2021164416 A1 WO2021164416 A1 WO 2021164416A1 CN 2020139259 W CN2020139259 W CN 2020139259W WO 2021164416 A1 WO2021164416 A1 WO 2021164416A1
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electrode
layers
ray detector
circuit
layer
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PCT/CN2020/139259
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French (fr)
Chinese (zh)
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巫皓迪
葛永帅
牛广达
唐江
梁栋
刘新
郑海荣
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中国科学院深圳先进技术研究院
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Publication of WO2021164416A1 publication Critical patent/WO2021164416A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention belongs to the technical field of detectors, and particularly relates to an X-ray detector and a preparation method thereof.
  • the basic working principle of the semiconductor radiation detector is: high-energy photons excite electron-hole pairs in the semiconductor. Under the action of an electric field, the electron-hole pairs drift to the positive and negative electrodes respectively to generate induced charges and be collected by the external circuit to form electricity. Signal. According to different working modes, semiconductor radiation detectors can be divided into photon counting detectors and energy integrating detectors.
  • the photon-counting detector works in pulse mode and induces electric charges to generate pulse signals.
  • the number of pulses corresponds to the number of high-energy photons
  • the pulse height corresponds to the energy of high-energy photons.
  • the photon counting detector cannot work under high flux X-rays, but when the photon flux is reduced, the signal-to-noise ratio will decrease, and the dynamic range of the detector will be reduced, which is not conducive to X-ray imaging.
  • the embodiment of the present invention provides an X-ray detector and a preparation method thereof.
  • an X-ray detector including:
  • each of the electrode layers includes a two-dimensional area array electrode composed of a plurality of electrodes, and the gap between the two electrode layers Each electrode has a one-to-one correspondence;
  • Two layers of readout array circuit panels are respectively arranged on the two electrode layers and connected to each electrode; wherein, each of the readout array circuit panels is provided with signal readout electrodes, and the two layers
  • the signal processing circuits in the readout array circuit panel are pulse counting circuit and charge integrating circuit.
  • the pulse counting circuit includes a plurality of pixel units, and each pixel unit corresponds to a pulse counting sub-circuit and is connected to one electrode in the corresponding electrode layer.
  • the charge integration circuit includes a plurality of pixel capacitors, and each pixel capacitor is correspondingly connected to an electrode in a corresponding electrode layer, and is used to store a charge signal generated by the corresponding electrode. ;
  • the charge signal stored in the pixel capacitor is read out through the strobe signal.
  • the readout array circuit panel corresponding to the pulse counting circuit is a CMOS array panel
  • the readout array circuit panel corresponding to the charge integration circuit is a CMOS array panel or a TFT array panel.
  • the two carrier transport layers are an electron transport layer and a hole transport layer
  • the material of the electron transport layer is one or a combination of two or more of TiO 2 , SnO 2 , PCBM, PTAA and ZnMgO, and the material of the hole transport layer is NiO, CuI and spiro-MeOTAD. One or a combination of two or more.
  • the two electrode layers are an anode electrode layer and a cathode electrode layer;
  • the anode electrode layer is provided on the hole transport layer, and the cathode electrode layer is provided on the electron transport layer.
  • an embodiment of the present invention provides a method for manufacturing an X-ray detector, including:
  • each electrode layer includes a two-dimensional area array electrode composed of a plurality of electrodes, and each of the electrode layers between the two electrode layers One-to-one correspondence between electrodes;
  • a layer of readout array circuit panels is provided on each of the electrode layers; wherein, each of the readout array circuit panels is provided with signal readout electrodes, and the two layers of readout array circuit panels are
  • the signal processing circuit is a pulse counting circuit and a charge integrating circuit.
  • the carrier transport layer is prepared on both sides of the perovskite crystal substrate by evaporation or spin coating.
  • a layer of the electrode layer is respectively prepared on the two carrier transport layers by a mask evaporation method.
  • two layers of the readout array circuit panels are respectively arranged on the corresponding electrode layers by means of flip-chip bonding.
  • both sides of the perovskite crystal substrate are provided with carrier transport layers, and an electrode layer is respectively provided on the two carrier transport layers, and a readout array circuit is respectively provided on the two electrode layers
  • the signal processing circuit in the two-layer readout array circuit panel is a pulse counting circuit and a charge integrator circuit. By controlling the working state of the two signal processing circuits, the charge signal can be read from the signal readout electrode, so that X
  • the ray detector works in the photon counting mode, or makes the X-ray detector work in the energy integration mode, or makes the X-ray detector work in the photon counting mode and the energy integration mode.
  • Fig. 1 is a schematic structural diagram of an X-ray detector provided by an embodiment of the present invention
  • FIG. 2 is a schematic diagram of the structure of an X-ray detector provided by an embodiment of the present invention.
  • FIG. 3 is a schematic diagram of the structure of an electrode layer provided by an embodiment of the present invention.
  • FIG. 4 is a schematic structural diagram of a pulse counting circuit provided by an embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of a charge integration circuit provided by an embodiment of the present invention.
  • FIG. 6 is a schematic flowchart of a method for manufacturing an X-ray detector according to an embodiment of the present invention.
  • FIG. 7 is a schematic diagram of the manufacturing process of the X-ray detector provided by the embodiment of the present invention.
  • the term “if” can be construed as “when” or “once” or “in response to determination” or “in response to detecting “.
  • the phrase “if determined” or “if detected [described condition or event]” can be interpreted as meaning “once determined” or “in response to determination” or “once detected [described condition or event]” depending on the context ]” or “in response to detection of [condition or event described]”.
  • the basic working principle of the semiconductor radiation detector is: high-energy photons excite electron-hole pairs in the semiconductor. Under the action of an electric field, the electron-hole pairs drift to the positive and negative electrodes respectively to generate induced charges and be collected by the external circuit to form electricity. Signal.
  • semiconductor radiation detectors can be divided into photon counting detectors and energy integrating detectors.
  • the photon-counting detector works in pulse mode and induces electric charge to generate pulse signals.
  • the number of pulses corresponds to the number of high-energy photons
  • the pulse height corresponds to the energy of high-energy photons.
  • the energy-integrating detector integrates the electron-hole pairs generated by a large number of high-energy photons and outputs it as an electrical signal.
  • the signal amplitude is the accumulation of the energy of all photons detected within a certain period of time.
  • the photon counting detector can avoid noise interference by setting the voltage threshold, and at the same time obtain the X-ray energy spectrum information of the detector, which provides effective information for the algorithm processing of multi-energy CT.
  • the photon counting detector will saturate due to the "dead time" of the back-end circuit, and it will not be able to make an effective signal output, while the traditional energy integrating detector has a very high linearity.
  • the dynamic range basically does not have this problem.
  • the electron mobility of a cadmium zinc telluride detector is about 1000 cm 2 V -1 s -1
  • the hole mobility The rate is about 100 cm 2 V -1 s -1
  • the difference between the two is ten times. Due to poor hole transport characteristics, hole trapping is more serious, and there is a "hole tailing" effect, which will reduce the energy resolution of the detector and the efficiency of the photoelectric absorption peak. Therefore, the electrode structure of the detector is generally specially designed to prepare single-carrier devices. When the detector is working, only carriers with high mobility are collected, and the other carriers are removed through the barrier layer.
  • Perovskite materials can be easily prepared by the solution method, have a large carrier mobility and carrier lifetime, and have been widely used in solar cells, light-emitting diodes, photodetectors and other fields in recent years.
  • Perovskite materials have the characteristics of dual-carrier transport, and their electron mobility and hole mobility are equivalent, and can be fabricated into dual-carrier devices.
  • Pb 2+ has a unique atomic electron configuration of 6s 2 lone pair of electrons and empty 6p orbitals, it leads to strong spin-orbit coupling, thereby reducing the effective electron and hole Mass, resulting in high carrier mobility.
  • X-ray detectors Utilizing the dual carrier transmission and high mobility characteristics of perovskite materials, and connecting the upper and lower electrodes to different back-end processing circuits, X-ray detectors that work in both photon counting and energy integration modes can be prepared.
  • the X-ray detector in the embodiment of the present invention is provided with carrier transport layers on both sides of the perovskite crystal substrate, and electrode layers are respectively provided on the two carrier transport layers.
  • the electrode layers are respectively provided with readout array circuit panels.
  • the signal processing circuits in the two-layer readout array circuit panels are pulse counting circuit and charge integration circuit. By controlling the working status of the two signal processing circuits, the electrode can be read out from the signal.
  • the charge signal is read out to make the X-ray detector work in the photon counting mode, or make the X-ray detector work in the energy integration mode, or make the X-ray detector work in the photon counting mode and the energy integration mode at the same time.
  • Figures 1 to 3 are schematic diagrams of the structure of an X-ray detector provided by an embodiment of the present invention.
  • the X-ray detector may include a perovskite crystal substrate 10 and two carrier transport layers ( 21, 22), two electrode layers (31, 32) and two readout array circuit panels (41, 42).
  • two carrier transport layers (21, 22) are respectively arranged on both sides of the perovskite crystal substrate 10, and two electrode layers (31, 32) are respectively arranged on the carrier transport layers (21, 22)
  • two layers of readout array circuit panels (41, 42) are respectively arranged on the electrode layers (31, 32).
  • each electrode layer includes a two-dimensional area array electrode composed of a plurality of electrodes, and each electrode between the two electrode layers corresponds to each other one to one. 2 and 3, the electrode layer 31 is taken as an example.
  • the electrode layer 31 includes a two-dimensional area array electrode composed of a plurality of electrodes, each small rectangular area represents an electrode, and each electrode constitutes a two-dimensional area array electrode.
  • each readout array circuit panel is provided with signal readout electrodes, and the signal processing circuits in the two-layer readout array circuit panel are pulse counting circuits and charge integration circuits.
  • the working state of the processing circuit can read out the charge signal from the signal readout electrode to make the X-ray detector work in the photon counting mode, or make the X-ray detector work in the energy integration mode, or make the X-ray detector work in the photon at the same time Counting mode and energy integration mode.
  • the two carrier transport layers (21, 22) may be an electron transport layer and a hole transport layer, respectively.
  • the specific positions of the electron transport layer and the hole transport layer are not limited.
  • the electron transport layer may be a current carrier disposed on the upper side of the perovskite crystal substrate 10.
  • the sub-transport layer 21, the hole transport layer may be a carrier transport layer 22 provided on the lower side of the perovskite crystal substrate 10; in addition, the electron transport layer may also be provided on the lower side of the perovskite crystal substrate 10.
  • the carrier transport layer 22 and the hole transport layer may be the carrier transport layer 21 provided on the upper side of the perovskite crystal substrate 10.
  • the material of the electron transport layer can be one or a combination of two or more of TiO 2 , SnO 2 , PCBM, PTAA and ZnMgO, and the material of the hole transport layer can be NiO, CuI, and spiro-MeOTAD. One or a combination of two or more.
  • the two electrode layers may be an anode electrode layer and a cathode electrode layer, respectively; the anode electrode layer is arranged on the hole transport layer, and the cathode electrode layer is arranged on the electron transport layer.
  • the carrier transport layer 21 on the upper side of the perovskite crystal substrate 10 is an electron transport layer
  • the carrier transport layer 22 on the lower side is a hole transport layer
  • the carrier transport layer 21 is provided with an anode electrode layer
  • the carrier transport layer 22 is provided with a cathode electrode layer.
  • the electrode layer (31, 32) can be prepared on the carrier transport layer (21, 22) by evaporation or spin coating, and the material of the electrode layer (31, 32) can be Cu or Ag. , Au and other materials.
  • each electrode on the electrode layer 31 needs a one-to-one correspondence with each electrode on the electrode layer 32. Therefore, the electrodes can be prepared on the carrier transport layers (21, 22) by mask evaporation method. Layer (31, 32).
  • the above-mentioned pulse counting circuit may include a plurality of pixel units, and each pixel unit corresponds to a pulse counting sub-circuit and is connected to one electrode in the corresponding electrode layer (31, 32).
  • the above-mentioned pulse counting circuit selects a single pixel readout circuit, and each electrode of the electrode layer (31, 32) is connected to an independent pixel of the read channel in the pulse counting circuit, and is processed independently by a single readout channel.
  • the signal processing circuit in the readout array circuit panel 41 is a pulse counting circuit as an example for description.
  • the pulse counting circuit in the readout array circuit panel 41 may include a plurality of pixel units 411, and each pixel unit 411 corresponds to a pulse counting sub-circuit and is connected to one electrode in the corresponding electrode layer 31.
  • each pixel unit 411 may be connected to one electrode in the corresponding electrode layer 31 through the amplifying circuit 412 therein.
  • the signal processing circuit in the readout array circuit panel 42 may be a pulse counting circuit, which is not limited in the embodiment of the present invention.
  • the above-mentioned charge integration circuit may include a plurality of pixel capacitors, and each pixel capacitor is connected to an electrode in the corresponding electrode layer (31, 32) for storing the charge signal generated by the corresponding electrode;
  • the strobe signal reads out the charge signal stored in the pixel capacitor.
  • the description will be made by taking the signal processing circuit in the readout array circuit panel 42 as a charge integrator circuit as an example.
  • the charge integration circuit in the readout array circuit panel 42 may include a plurality of pixel capacitors, and each pixel capacitor is connected to one electrode in the corresponding electrode layer 32 for storing the charges generated by each electrode in the electrode layer 32.
  • Signal, each pixel capacitance corresponds to one electrode in the electrode layer 32.
  • the charge generated by each electrode of the electrode layer 32 is first stored on the corresponding pixel capacitor, and then the charge signal is read out row by row through the strobe signal.
  • the readout array circuit panel corresponding to the pulse counting circuit may be CMOS (Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor) array panel
  • the readout array circuit panel corresponding to the charge integration circuit may be a CMOS array panel or a TFT (Thin-Film Transistor, thin film transistor) array panel.
  • the readout array circuit panel 41 may be a CMOS array panel
  • the readout array circuit panel 42 may be a CMOS array panel or a TFT array panel.
  • the structure of the readout array circuit panel 31 can refer to the structure of the readout array circuit panel 41, which will not be repeated here.
  • both sides of the perovskite crystal substrate 10 are provided with carrier transport layers (21, 22), and an electrode layer (31) is provided on the two carrier transport layers (21, 22).
  • a readout array circuit panel (41, 42) is set on the two electrode layers (31, 32), and the signal processing circuits in the two readout array circuit panels (41, 42) are respectively
  • the pulse counting circuit and the charge integrator circuit by controlling the working status of the two signal processing circuits, can read out the charge signal from the signal readout electrode, making the X-ray detector work in photon counting mode, or make the X-ray detector work in energy Integration mode, or make X-ray detector work in photon counting mode and energy integration mode.
  • the X-ray detector in the present invention utilizes the dual carrier transmission characteristics of the perovskite material, and can work in the photon counting mode and the energy integration mode at the same time, or work in the photon counting mode or the energy integration mode, and can obtain the energy of X-rays.
  • Spectral information provides more effective information for imaging.
  • the X-ray detector in the embodiment of the present invention uses the dual carrier transmission characteristics of the perovskite material and uses the PN structure to build a photovoltaic detector, so that the detector has a built-in electric field and does not require an external bias voltage to work.
  • the negative electrode outputs electrons and holes respectively, one end uses a pulse counting circuit for photon counting, and the other end uses a capacitor integration circuit for signal integration output, achieving the purpose of dual-mode operation. That is, it can work in the photon counting mode and the energy integration mode at the same time, or work in the photon counting mode or the energy integration mode, to obtain the energy spectrum information of the X-ray, and provide more effective information for imaging.
  • FIG. 6 shows a schematic flow chart of a method for preparing an X-ray detector provided by an embodiment of the present invention. The relevant part.
  • the preparation method of the X-ray detector in the embodiment of the present invention may include:
  • step 101 carrier transport layers are respectively prepared on both sides of the perovskite crystal substrate.
  • the carrier transport layer (21, 22) can be prepared on both sides of the perovskite crystal substrate 10 by evaporation or spin coating.
  • the two carrier transport layers (21, 22) may be an electron transport layer and a hole transport layer, respectively; wherein the material of the electron transport layer is TiO 2 , SnO 2 , PCBM, PTAA and One or a combination of two or more of ZnMgO, and the material of the hole transport layer is one or a combination of two or more of NiO, CuI and spiro-MeOTAD.
  • step 102 an electrode layer is respectively prepared on the two carrier transport layers.
  • each of the electrode layers (31, 32) includes a two-dimensional area array electrode composed of a plurality of electrodes, and each electrode between the two electrode layers (31, 32) corresponds to each other in a one-to-one correspondence.
  • one electrode layer (31, 32) can be prepared on the two carrier transport layers (21, 22) by mask evaporation method.
  • step 103 a layer of readout array circuit panel is provided on each electrode layer.
  • each of the readout array circuit panels is provided with signal readout electrodes, and the signal processing circuits in the two-layer readout array circuit panels are pulse counting circuits and charge integration circuits, respectively.
  • the two layers of the readout array circuit panel can be respectively arranged on the corresponding electrode layers (31, 32) by means of flip-chip welding.
  • carrier transport layers are prepared on both sides of the perovskite crystal substrate, one electrode layer is prepared on the two carrier transport layers, and each electrode layer is prepared separately One-layer readout array circuit panel, and two-layer readout array circuit panel.
  • the signal processing circuits in the two-layer readout array circuit panel are pulse counting circuit and charge integration circuit. By controlling the working status of the two signal processing circuits, the charge can be read out from the signal readout electrode. Signal to make the X-ray detector work in the photon counting mode, or make the X-ray detector work in the energy integration mode, or make the X-ray detector work in the photon counting mode and the energy integration mode.

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Abstract

The present invention is suitable for the technical field of detectors, and provides an X-ray detector and a preparation method therefor. The X-ray detector comprises: a perovskite crystal substrate having carrier transport layers on both side surfaces; two electrode layers respectively disposed on the two carrier transport layers, wherein each electrode layer comprises a two-dimensional array electrode consisting of multiple electrodes, and electrodes between the two electrode layers have one-to-one correspondence to each other; and two read-out array circuit panels respectively disposed on the two electrode layers and connected to the electrodes, wherein each read-out array circuit panel is provided with a signal read-out electrode, and signal processing circuits in the two read-out array circuit panels are respectively a pulse counting circuit and a charge integrating circuit. According to the present invention, the X-ray detector can work in a photon counting mode, or the X-ray detector can work in an energy integration mode, or the X-ray detector can work in a photon counting mode and an energy integration mode at the same time.

Description

X射线探测器及其制备方法X-ray detector and preparation method thereof 技术领域Technical field
本发明属于探测器技术领域，尤其涉及X射线探测器及其制备方法。The invention belongs to the technical field of detectors, and particularly relates to an X-ray detector and a preparation method thereof.
背景技术Background technique
半导体的辐射探测器的基本工作原理为：高能光子在半导体中激发电子空穴对，电子空穴对在电场的作用下，分别向正负电极漂移，产生感应电荷并被外电路收集，形成电信号。根据工作模式的不同，半导体辐射探测器可分为光子计数型探测器和能量积分型探测器。The basic working principle of the semiconductor radiation detector is: high-energy photons excite electron-hole pairs in the semiconductor. Under the action of an electric field, the electron-hole pairs drift to the positive and negative electrodes respectively to generate induced charges and be collected by the external circuit to form electricity. Signal. According to different working modes, semiconductor radiation detectors can be divided into photon counting detectors and energy integrating detectors.
其中，光子计数型探测器工作在脉冲模式，感应电荷产生脉冲信号，其中脉冲个数为对应高能光子数量，脉冲高度对应高能光子能量。而光子计数型探测器无法工作在高通量X射线下，但是当减少光子通量将导致信噪比降低，同时减小了探测器的动态范围，不利于X射线成像。Among them, the photon-counting detector works in pulse mode and induces electric charges to generate pulse signals. The number of pulses corresponds to the number of high-energy photons, and the pulse height corresponds to the energy of high-energy photons. The photon counting detector cannot work under high flux X-rays, but when the photon flux is reduced, the signal-to-noise ratio will decrease, and the dynamic range of the detector will be reduced, which is not conducive to X-ray imaging.
技术问题technical problem
为克服相关技术中存在的问题，本发明实施例提供了X射线探测器及其制备方法。In order to overcome the problems in the related art, the embodiment of the present invention provides an X-ray detector and a preparation method thereof.
技术解决方案Technical solutions
本发明是通过如下技术方案实现的：The present invention is realized through the following technical solutions:
第一方面，本发明实施例提供了一种X射线探测器，包括：In the first aspect, an embodiment of the present invention provides an X-ray detector, including:
钙钛矿晶体基板，两侧面均设置有载流子传输层；Perovskite crystal substrate with carrier transport layers on both sides;
两层电极层，分别设置在两层所述载流子传输层上；其中，每一所述电极层包括由多个电极组成的二维面阵电极，且两层所述电极层之间的各个电极一一对应；Two electrode layers are respectively arranged on the two carrier transport layers; wherein, each of the electrode layers includes a two-dimensional area array electrode composed of a plurality of electrodes, and the gap between the two electrode layers Each electrode has a one-to-one correspondence;
两层读出阵列电路面板，分别设置在所述两层电极层上，且与各个电极连接；其中，每一所述读出阵列电路面板上均设置有信号读出电极，且所述两层读出阵列电路面板中的信号处理电路分别为脉冲计数电路和电荷积分电路。Two layers of readout array circuit panels are respectively arranged on the two electrode layers and connected to each electrode; wherein, each of the readout array circuit panels is provided with signal readout electrodes, and the two layers The signal processing circuits in the readout array circuit panel are pulse counting circuit and charge integrating circuit.
在第一方面的第一种可能的实现方式中，所述脉冲计数电路包括多个像素单元，每个像素单元对应一个脉冲计数子电路，且与对应的电极层中的一个电极对应连接。In a first possible implementation manner of the first aspect, the pulse counting circuit includes a plurality of pixel units, and each pixel unit corresponds to a pulse counting sub-circuit and is connected to one electrode in the corresponding electrode layer.
在第一方面的第二种可能的实现方式中，所述电荷积分电路包括多个像素电容，每个像素电容与对应的电极层中的一个电极对应连接，用于存储对应电极产生的电荷信号；In a second possible implementation manner of the first aspect, the charge integration circuit includes a plurality of pixel capacitors, and each pixel capacitor is correspondingly connected to an electrode in a corresponding electrode layer, and is used to store a charge signal generated by the corresponding electrode. ；
其中，通过选通信号读出存储在所述像素电容中的电荷信号。Wherein, the charge signal stored in the pixel capacitor is read out through the strobe signal.
在第一方面的第三种可能的实现方式中，所述脉冲计数电路对应的读出阵列电路面板为CMOS阵列面板，所述电荷积分电路对应的读出阵列电路面板为CMOS阵列面板或TFT阵列面板。In a third possible implementation manner of the first aspect, the readout array circuit panel corresponding to the pulse counting circuit is a CMOS array panel, and the readout array circuit panel corresponding to the charge integration circuit is a CMOS array panel or a TFT array panel.
在第一方面的第四种可能的实现方式中，两层所述载流子传输层分别为电子传输层和空穴传输层；In a fourth possible implementation manner of the first aspect, the two carrier transport layers are an electron transport layer and a hole transport layer;
其中，所述电子传输层的材质为TiO 2、SnO 2、PCBM、PTAA和ZnMgO中的一种或两种以上的组合，所述空穴传输层的材质为NiO、CuI和spiro-MeOTAD中的一种或两种以上的组合。 Wherein, the material of the electron transport layer is one or a combination of two or more of TiO 2 , SnO 2 , PCBM, PTAA and ZnMgO, and the material of the hole transport layer is NiO, CuI and spiro-MeOTAD. One or a combination of two or more.
在第一方面的第五种可能的实现方式中，所述两层电极层分别为阳极电极层和阴极电极层；In a fifth possible implementation manner of the first aspect, the two electrode layers are an anode electrode layer and a cathode electrode layer;
其中，所述阳极电极层设置在所述空穴传输层上，所述阴极电极层设置在所述电子传输层上。Wherein, the anode electrode layer is provided on the hole transport layer, and the cathode electrode layer is provided on the electron transport layer.
第二方面，本发明实施例提供了一种X射线探测器的制备方法，包括：In the second aspect, an embodiment of the present invention provides a method for manufacturing an X-ray detector, including:
在钙钛矿晶体基板的两侧分别制备载流子传输层；Prepare carrier transport layers on both sides of the perovskite crystal substrate;
在两层所述载流子传输层上分别制备一层电极层；其中，每一所述电极层包括由多个电极组成的二维面阵电极，且两层所述电极层之间的各个电极一一对应；An electrode layer is respectively prepared on the two carrier transport layers; wherein each electrode layer includes a two-dimensional area array electrode composed of a plurality of electrodes, and each of the electrode layers between the two electrode layers One-to-one correspondence between electrodes;
在每层所述电极层上分别设置一层读出阵列电路面板；其中，每一所述读出阵列电路面板上均设置有信号读出电极，且所述两层读出阵列电路面板中的信号处理电路分别为脉冲计数电路和电荷积分电路。A layer of readout array circuit panels is provided on each of the electrode layers; wherein, each of the readout array circuit panels is provided with signal readout electrodes, and the two layers of readout array circuit panels are The signal processing circuit is a pulse counting circuit and a charge integrating circuit.
在第二方面的第一种可能的实现方式中，通过蒸镀或旋涂的方法，在所述钙钛矿晶体基板的两侧分别制备所述载流子传输层。In a first possible implementation manner of the second aspect, the carrier transport layer is prepared on both sides of the perovskite crystal substrate by evaporation or spin coating.
在第二方面的第二种可能的实现方式中，通过掩膜版蒸镀的方法，在两层所述载流子传输层上分别制备一层所述电极层。In a second possible implementation manner of the second aspect, a layer of the electrode layer is respectively prepared on the two carrier transport layers by a mask evaporation method.
在第二方面的第三种可能的实现方式中，通过倒装焊的方法，将两层所述读出阵列电路面板分别设置在对应的所述电极层上。In a third possible implementation manner of the second aspect, two layers of the readout array circuit panels are respectively arranged on the corresponding electrode layers by means of flip-chip bonding.
有益效果Beneficial effect
本发明实施例与现有技术相比存在的有益效果是：Compared with the prior art, the embodiments of the present invention have the following beneficial effects:
本发明实施例，钙钛矿晶体基板的两侧面均设置有载流子传输层，两层载流子传输层上分别设置一层电极层，在两层电极层上分别设置一读出阵列电路面板，且该两层读出阵列电路面板中的信号处理电路分别为脉冲计数电路和电荷积分电路，通过控制两个信号处理电路的工作状态，能够从信号读出电极读出电荷信号，使得X射线探测器工作在光子计数模式，或使得X射线探测器工作在能量积分模式，或使得X射线探测器工作在光子计数模式和能量积分模式。In the embodiment of the present invention, both sides of the perovskite crystal substrate are provided with carrier transport layers, and an electrode layer is respectively provided on the two carrier transport layers, and a readout array circuit is respectively provided on the two electrode layers The signal processing circuit in the two-layer readout array circuit panel is a pulse counting circuit and a charge integrator circuit. By controlling the working state of the two signal processing circuits, the charge signal can be read from the signal readout electrode, so that X The ray detector works in the photon counting mode, or makes the X-ray detector work in the energy integration mode, or makes the X-ray detector work in the photon counting mode and the energy integration mode.
应当理解的是，以上的一般描述和后文的细节描述仅是示例性和解释性的，并不能限制本说明书。It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit this specification.
附图说明Description of the drawings
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。In order to more clearly describe the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are merely of the present invention. For some embodiments, for those of ordinary skill in the art, other drawings may be obtained based on these drawings without creative labor.
图1是本发明一实施例提供的X射线探测器的结构示意图；Fig. 1 is a schematic structural diagram of an X-ray detector provided by an embodiment of the present invention;
图2是本发明一实施例提供的X射线探测器的结构示意图；2 is a schematic diagram of the structure of an X-ray detector provided by an embodiment of the present invention;
图3是本发明一实施例提供的电极层的结构示意图；3 is a schematic diagram of the structure of an electrode layer provided by an embodiment of the present invention;
图4是本发明一实施例提供的脉冲计数电路的结构示意图；4 is a schematic structural diagram of a pulse counting circuit provided by an embodiment of the present invention;
图5是本发明一实施例提供的电荷积分电路的结构示意图；FIG. 5 is a schematic structural diagram of a charge integration circuit provided by an embodiment of the present invention;
图6是本发明一实施例提供的X射线探测器的制备方法的示意性流程图；6 is a schematic flowchart of a method for manufacturing an X-ray detector according to an embodiment of the present invention;
图7是本发明实施例提供的X射线探测器的制备过程示意图。FIG. 7 is a schematic diagram of the manufacturing process of the X-ray detector provided by the embodiment of the present invention.
本发明的最佳实施方式The best mode of the present invention
以下描述中，为了说明而不是为了限定，提出了诸如特定系统结构、技术之类的具体细节，以便透彻理解本发明实施例。然而，本领域的技术人员应当清楚，在没有这些具体细节的其它实施例中也可以实现本发明。在其它情况中，省略对众所周知的系统、装置、电路以及方法的详细说明，以免不必要的细节妨碍本发明的描述。In the following description, for the purpose of illustration rather than limitation, specific details such as a specific system structure and technology are proposed for a thorough understanding of the embodiments of the present invention. However, it should be clear to those skilled in the art that the present invention can also be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, devices, circuits, and methods are omitted to avoid unnecessary details from obstructing the description of the present invention.
应当理解，当在本发明说明书和所附权利要求书中使用时，术语“包括”指示所描述特征、整体、步骤、操作、元素和/或组件的存在，但并不排除一个或多个其它特征、整体、步骤、操作、元素、组件和/或其集合的存在或添加。It should be understood that when used in the specification and appended claims of the present invention, the term "comprising" indicates the existence of the described features, wholes, steps, operations, elements and/or components, but does not exclude one or more other The existence or addition of features, wholes, steps, operations, elements, components, and/or collections thereof.
还应当理解，在本发明说明书和所附权利要求书中使用的术语“和/或”是指相关联列出的项中的一个或多个的任何组合以及所有可能组合，并且包括这些组合。It should also be understood that the term "and/or" used in the specification and appended claims of the present invention refers to any combination of one or more of the associated listed items and all possible combinations, and includes these combinations.
如在本发明说明书和所附权利要求书中所使用的那样，术语“如果”可以依据上下文被解释为“当...时”或“一旦”或“响应于确定”或“响应于检测到”。类似地，短语“如果确定”或“如果检测到[所描述条件或事件]”可以依据上下文被解释为意指“一旦确定”或“响应于确定”或“一旦检测到[所描述条件或事件]”或“响应于检测到[所描述条件或事件]”。As used in the description of the present invention and the appended claims, the term "if" can be construed as "when" or "once" or "in response to determination" or "in response to detecting ". Similarly, the phrase "if determined" or "if detected [described condition or event]" can be interpreted as meaning "once determined" or "in response to determination" or "once detected [described condition or event]" depending on the context ]" or "in response to detection of [condition or event described]".
另外，在本发明说明书和所附权利要求书的描述中，术语“第一”、“第二”、“第三”等仅用于区分描述，而不能理解为指示或暗示相对重要性。In addition, in the description of the specification of the present invention and the appended claims, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.
在本发明说明书中描述的参考“一个实施例”或“一些实施例”等意味着在本发明的一个或多个实施例中包括结合该实施例描述的特定特征、结构或特点。由此，在本说明书中的不同之处出现的语句“在一个实施例中”、“在一些实施例中”、“在其他一些实施例中”、“在另外一些实施例中”等不是必然都参考相同的实施例，而是意味着“一个或多个但不是所有的实施例”，除非是以其他方式另外特别强调。术语“包括”、“包含”、“具有”及它们的变形都意味着“包括但不限于”，除非是以其他方式另外特别强调。The reference to "one embodiment" or "some embodiments" etc. described in the specification of the present invention means that one or more embodiments of the present invention include a specific feature, structure, or characteristic described in combination with the embodiment. Therefore, the sentences "in one embodiment", "in some embodiments", "in some other embodiments", "in some other embodiments", etc. appearing in different places in this specification are not necessarily All refer to the same embodiment, but mean "one or more but not all embodiments" unless it is specifically emphasized otherwise. The terms "including", "including", "having" and their variations all mean "including but not limited to", unless otherwise specifically emphasized.
半导体的辐射探测器的基本工作原理为：高能光子在半导体中激发电子空穴对，电子空穴对在电场的作用下，分别向正负电极漂移，产生感应电荷并被外电路收集，形成电信号。根据工作模式的不同，半导体辐射探测器可分为光子计数型探测器和能量积分型探测器。光子计数型探测器工作在脉冲模式，感应电荷产生脉冲信号，其中脉冲个数为对应高能光子数量，脉冲高度对应高能光子能量。能量积分型探测器将大量高能光子产生的电子空穴对进行积分输出为电信号，信号幅度为一定时间内探测到的所有光子能量的累积。光子计数型探测器通过设置电压阈值，可避免噪声干扰，同时可得到所探测器X射线的能谱信息，为多能CT的算法处理提供有效的信息。但是，当X射线剂量增大，由于后端电路“死时间”的影响，光子计数型探测器将出现饱和，无法做出有效的信号输出，而传统的能量积分型探测器具有很高的线性动态范围，基本不存在此问题。The basic working principle of the semiconductor radiation detector is: high-energy photons excite electron-hole pairs in the semiconductor. Under the action of an electric field, the electron-hole pairs drift to the positive and negative electrodes respectively to generate induced charges and be collected by the external circuit to form electricity. Signal. According to different working modes, semiconductor radiation detectors can be divided into photon counting detectors and energy integrating detectors. The photon-counting detector works in pulse mode and induces electric charge to generate pulse signals. The number of pulses corresponds to the number of high-energy photons, and the pulse height corresponds to the energy of high-energy photons. The energy-integrating detector integrates the electron-hole pairs generated by a large number of high-energy photons and outputs it as an electrical signal. The signal amplitude is the accumulation of the energy of all photons detected within a certain period of time. The photon counting detector can avoid noise interference by setting the voltage threshold, and at the same time obtain the X-ray energy spectrum information of the detector, which provides effective information for the algorithm processing of multi-energy CT. However, when the X-ray dose increases, the photon counting detector will saturate due to the "dead time" of the back-end circuit, and it will not be able to make an effective signal output, while the traditional energy integrating detector has a very high linearity. The dynamic range basically does not have this problem.
目前用于辐射探测的半导体材料，其电子迁移率和空穴迁移率存在较大差异，如碲锌镉探测器的电子迁移率大约为1000 cm 2V -1s -1，而其空穴迁移率大约为100 cm 2V -1s -1，二者相差十倍。由于空穴传输特性较差，使得空穴俘获较严重，存在“空穴拖尾”效应，会使探测器的能量分辨率降低和光电吸收峰的效率减小。因此一般会探测器的电极结构进行特殊设计，制备单载流子器件，在探测器工作时，只对迁移率大的载流子进行收集，另一种载流子则通过阻挡层去除。 Current semiconductor materials used for radiation detection have large differences in electron mobility and hole mobility. For example, the electron mobility of a cadmium zinc telluride detector is about 1000 cm 2 V -1 s -1 , while the hole mobility The rate is about 100 cm 2 V -1 s -1 , and the difference between the two is ten times. Due to poor hole transport characteristics, hole trapping is more serious, and there is a "hole tailing" effect, which will reduce the energy resolution of the detector and the efficiency of the photoelectric absorption peak. Therefore, the electrode structure of the detector is generally specially designed to prepare single-carrier devices. When the detector is working, only carriers with high mobility are collected, and the other carriers are removed through the barrier layer.
钙钛矿材料能够通过溶液法轻松制备，具有较大的载流子迁移率和载流子寿命，近年来被广泛用于太阳能电池、发光二极管、光电探测器等领域。钙钛矿材料具有双载流子传输的特性，其电子迁移率和空穴迁移率相当，可以制备成双载流子器件。对于铅基钙钛矿而言，由于Pb 2+具有6s 2孤对电子和空的6p轨道的独特原子电子构型，导致了很强的自旋轨道耦合，从而降低了电子和空穴的有效质量，形成了高载流子迁移率。利用钙钛矿材料的双载流子传输和高迁移率特性，通过上下电极接入不同的后端处理电路，可以制备同时工作在光子计数和能量积分模式的X射线探测器。 Perovskite materials can be easily prepared by the solution method, have a large carrier mobility and carrier lifetime, and have been widely used in solar cells, light-emitting diodes, photodetectors and other fields in recent years. Perovskite materials have the characteristics of dual-carrier transport, and their electron mobility and hole mobility are equivalent, and can be fabricated into dual-carrier devices. For lead-based perovskites, because Pb 2+ has a unique atomic electron configuration of 6s 2 lone pair of electrons and empty 6p orbitals, it leads to strong spin-orbit coupling, thereby reducing the effective electron and hole Mass, resulting in high carrier mobility. Utilizing the dual carrier transmission and high mobility characteristics of perovskite materials, and connecting the upper and lower electrodes to different back-end processing circuits, X-ray detectors that work in both photon counting and energy integration modes can be prepared.
基于上述问题，本发明实施例中的X射线探测器，在钙钛矿晶体基板的两侧面均设置有载流子传输层，在两层载流子传输层上分别设置电极层，在两层电极层上分别设置读出阵列电路面板，两层读出阵列电路面板中的信号处理电路分别为脉冲计数电路和电荷积分电路，通过控制两个信号处理电路的工作状态，能够从信号读出电极读出电荷信号，使得X射线探测器工作在光子计数模式，或使得X射线探测器工作在能量积分模式，或使得X射线探测器同时工作在光子计数模式和能量积分模式。Based on the above problems, the X-ray detector in the embodiment of the present invention is provided with carrier transport layers on both sides of the perovskite crystal substrate, and electrode layers are respectively provided on the two carrier transport layers. The electrode layers are respectively provided with readout array circuit panels. The signal processing circuits in the two-layer readout array circuit panels are pulse counting circuit and charge integration circuit. By controlling the working status of the two signal processing circuits, the electrode can be read out from the signal. The charge signal is read out to make the X-ray detector work in the photon counting mode, or make the X-ray detector work in the energy integration mode, or make the X-ray detector work in the photon counting mode and the energy integration mode at the same time.
图1至图3是本发明一实施例提供的X射线探测器的结构示意图，参照图1至图3，该X射线探测器可以包括钙钛矿晶体基板10、两层载流子传输层（21，22）、两层电极层（31，32）和两层读出阵列电路面板（41，42）。Figures 1 to 3 are schematic diagrams of the structure of an X-ray detector provided by an embodiment of the present invention. Referring to Figures 1 to 3, the X-ray detector may include a perovskite crystal substrate 10 and two carrier transport layers ( 21, 22), two electrode layers (31, 32) and two readout array circuit panels (41, 42).
具体的，两层载流子传输层（21，22）分别设置在钙钛矿晶体基板10的两侧面，两层电极层（31，32）分别设置在载流子传输层（21，22）上，两层读出阵列电路面板（41，42）分别设置在电极层（31，32）上。Specifically, two carrier transport layers (21, 22) are respectively arranged on both sides of the perovskite crystal substrate 10, and two electrode layers (31, 32) are respectively arranged on the carrier transport layers (21, 22) Above, two layers of readout array circuit panels (41, 42) are respectively arranged on the electrode layers (31, 32).
其中，每一电极层包括由多个电极组成的二维面阵电极，且两层所述电极层之间的各个电极一一对应。参见图2和图3，以电极层31为例，电极层31包括由多个电极组成的二维面阵电极，每个小矩形区域表征一个电极，各个电极组成二维面阵电极。Wherein, each electrode layer includes a two-dimensional area array electrode composed of a plurality of electrodes, and each electrode between the two electrode layers corresponds to each other one to one. 2 and 3, the electrode layer 31 is taken as an example. The electrode layer 31 includes a two-dimensional area array electrode composed of a plurality of electrodes, each small rectangular area represents an electrode, and each electrode constitutes a two-dimensional area array electrode.
上述X射线探测器，每一读出阵列电路面板上均设置有信号读出电极，且两层读出阵列电路面板中的信号处理电路分别为脉冲计数电路和电荷积分电路，通过控制两个信号处理电路的工作状态，能够从信号读出电极读出电荷信号，使得X射线探测器工作在光子计数模式，或使得X射线探测器工作在能量积分模式，或使得X射线探测器同时工作在光子计数模式和能量积分模式。In the above-mentioned X-ray detector, each readout array circuit panel is provided with signal readout electrodes, and the signal processing circuits in the two-layer readout array circuit panel are pulse counting circuits and charge integration circuits. The working state of the processing circuit can read out the charge signal from the signal readout electrode to make the X-ray detector work in the photon counting mode, or make the X-ray detector work in the energy integration mode, or make the X-ray detector work in the photon at the same time Counting mode and energy integration mode.
一个实施例中，两层载流子传输层（21，22）可以分别为电子传输层和空穴传输层。本发明实施例中，对电子传输层和空穴传输层的具体位置不做限定，以图1所示方向为例，电子传输层可以为设置在钙钛矿晶体基板10的上侧面的载流子传输层21，空穴传输层可以为设置在钙钛矿晶体基板10的下侧面的载流子传输层22；另外，电子传输层也可以为设置在钙钛矿晶体基板10的下侧面的载流子传输层22，空穴传输层可以为设置在钙钛矿晶体基板10的上侧面的载流子传输层21。In an embodiment, the two carrier transport layers (21, 22) may be an electron transport layer and a hole transport layer, respectively. In the embodiment of the present invention, the specific positions of the electron transport layer and the hole transport layer are not limited. Taking the direction shown in FIG. 1 as an example, the electron transport layer may be a current carrier disposed on the upper side of the perovskite crystal substrate 10. The sub-transport layer 21, the hole transport layer may be a carrier transport layer 22 provided on the lower side of the perovskite crystal substrate 10; in addition, the electron transport layer may also be provided on the lower side of the perovskite crystal substrate 10. The carrier transport layer 22 and the hole transport layer may be the carrier transport layer 21 provided on the upper side of the perovskite crystal substrate 10.
其中，上述电子传输层的材质可以为TiO 2、SnO 2、PCBM、PTAA和ZnMgO中的一种或两种以上的组合，上述空穴传输层的材质可以为NiO、CuI和spiro-MeOTAD中的一种或两种以上的组合。 Wherein, the material of the electron transport layer can be one or a combination of two or more of TiO 2 , SnO 2 , PCBM, PTAA and ZnMgO, and the material of the hole transport layer can be NiO, CuI, and spiro-MeOTAD. One or a combination of two or more.
一个实施例中，所述两层电极层可以分别为阳极电极层和阴极电极层；阳极电极层设置在空穴传输层上，阴极电极层设置在电子传输层上。In an embodiment, the two electrode layers may be an anode electrode layer and a cathode electrode layer, respectively; the anode electrode layer is arranged on the hole transport layer, and the cathode electrode layer is arranged on the electron transport layer.
参见图1，一个实施例中，钙钛矿晶体基板10的上侧面的载流子传输层21为电子传输层，下侧面的载流子传输层22为空穴传输层，载流子传输层21上设置有阳极电极层，载流子传输层22上设置有阴极电极层。1, in one embodiment, the carrier transport layer 21 on the upper side of the perovskite crystal substrate 10 is an electron transport layer, and the carrier transport layer 22 on the lower side is a hole transport layer, and the carrier transport layer 21 is provided with an anode electrode layer, and the carrier transport layer 22 is provided with a cathode electrode layer.
示例性的，可以通过蒸镀或旋涂的方法，在载流子传输层（21，22）上分别制备电极层（31，32），电极层（31，32）的材料可选用Cu、Ag、Au等材料。Exemplarily, the electrode layer (31, 32) can be prepared on the carrier transport layer (21, 22) by evaporation or spin coating, and the material of the electrode layer (31, 32) can be Cu or Ag. , Au and other materials.
示例性的，电极层31上的各个电极与电极层32上的各个电极需要一一对应，因此可以通过掩膜版蒸镀的方法，在载流子传输层（21，22）上分别制备电极层（31，32）。Exemplarily, each electrode on the electrode layer 31 needs a one-to-one correspondence with each electrode on the electrode layer 32. Therefore, the electrodes can be prepared on the carrier transport layers (21, 22) by mask evaporation method. Layer (31, 32).
一个实施例中，上述脉冲计数电路可以包括多个像素单元，每个像素单元对应一个脉冲计数子电路，且与对应的电极层（31，32）中的一个电极对应连接。上述脉冲计数电路选用单像素读出电路，电极层（31，32）的每个电极都连接到脉冲计数电路中读取通道的独立像素，由单个读出通道独立处理。In an embodiment, the above-mentioned pulse counting circuit may include a plurality of pixel units, and each pixel unit corresponds to a pulse counting sub-circuit and is connected to one electrode in the corresponding electrode layer (31, 32). The above-mentioned pulse counting circuit selects a single pixel readout circuit, and each electrode of the electrode layer (31, 32) is connected to an independent pixel of the read channel in the pulse counting circuit, and is processed independently by a single readout channel.
示例性的，参见图4，以读出阵列电路面板41中的信号处理电路为脉冲计数电路为例进行说明。具体的，读出阵列电路面板41中的脉冲计数电路可以包括多个像素单元411，每个像素单元411对应一个脉冲计数子电路，且与对应的电极层31中的一个电极对应连接。例如，每个像素单元411可以通过其中的放大电路412与对应的电极层31中的一个电极对应连接。Exemplarily, referring to FIG. 4, the signal processing circuit in the readout array circuit panel 41 is a pulse counting circuit as an example for description. Specifically, the pulse counting circuit in the readout array circuit panel 41 may include a plurality of pixel units 411, and each pixel unit 411 corresponds to a pulse counting sub-circuit and is connected to one electrode in the corresponding electrode layer 31. For example, each pixel unit 411 may be connected to one electrode in the corresponding electrode layer 31 through the amplifying circuit 412 therein.
需要说明的是，在其他实施例中，读出阵列电路面板42中的信号处理电路可以为脉冲计数电路，本发明实施例对此不予限定。It should be noted that in other embodiments, the signal processing circuit in the readout array circuit panel 42 may be a pulse counting circuit, which is not limited in the embodiment of the present invention.
一个实施例中，上述电荷积分电路可以包括多个像素电容，每个像素电容与对应的电极层（31,32）中的一个电极对应连接，用于存储对应电极产生的电荷信号；其中，通过选通信号读出存储在像素电容中的电荷信号。In an embodiment, the above-mentioned charge integration circuit may include a plurality of pixel capacitors, and each pixel capacitor is connected to an electrode in the corresponding electrode layer (31, 32) for storing the charge signal generated by the corresponding electrode; The strobe signal reads out the charge signal stored in the pixel capacitor.
示例性的，参见图5，以读出阵列电路面板42中的信号处理电路为电荷积分电路为例进行进行说明。具体的，读出阵列电路面板42中的电荷积分电路可以包括多个像素电容，每个像素电容与对应的电极层32中的一个电极对应连接，用于存储电极层32中各个电极产生的电荷信号，每个像素电容与电极层32中一个电极对应。本实施例中，电极层32的各个电极产生的电荷首先存储在对应的像素电容上，然后通过选通信号对电荷信号进行逐行读出。Exemplarily, referring to FIG. 5, the description will be made by taking the signal processing circuit in the readout array circuit panel 42 as a charge integrator circuit as an example. Specifically, the charge integration circuit in the readout array circuit panel 42 may include a plurality of pixel capacitors, and each pixel capacitor is connected to one electrode in the corresponding electrode layer 32 for storing the charges generated by each electrode in the electrode layer 32. Signal, each pixel capacitance corresponds to one electrode in the electrode layer 32. In this embodiment, the charge generated by each electrode of the electrode layer 32 is first stored on the corresponding pixel capacitor, and then the charge signal is read out row by row through the strobe signal.
一个实施例中，所述脉冲计数电路对应的读出阵列电路面板可以为CMOS（Complementary Metal Oxide Semiconductor，互补金属氧化物半导体）阵列面板，所述电荷积分电路对应的读出阵列电路面板可以为CMOS阵列面板或TFT（Thin-Film Transistor，薄膜晶体管）阵列面板。例如，读出阵列电路面板41可以为CMOS阵列面板，读出阵列电路面板42可以为CMOS阵列面板或TFT阵列面板。In one embodiment, the readout array circuit panel corresponding to the pulse counting circuit may be CMOS (Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor) array panel, the readout array circuit panel corresponding to the charge integration circuit may be a CMOS array panel or a TFT (Thin-Film Transistor, thin film transistor) array panel. For example, the readout array circuit panel 41 may be a CMOS array panel, and the readout array circuit panel 42 may be a CMOS array panel or a TFT array panel.
需要说明的是，读出阵列电路面板31的结构可以参考读出阵列电路面板41的结构，在此不再赘述。It should be noted that the structure of the readout array circuit panel 31 can refer to the structure of the readout array circuit panel 41, which will not be repeated here.
上述X射线探测器，钙钛矿晶体基板10的两侧面均设置有载流子传输层（21，22），两层载流子传输层（21，22）上分别设置一层电极层（31，32），在两层电极层（31，32）上分别设置一读出阵列电路面板（41，42），且该两层读出阵列电路面板（41，42）中的信号处理电路分别为脉冲计数电路和电荷积分电路，通过控制两个信号处理电路的工作状态，能够从信号读出电极读出电荷信号，使得X射线探测器工作在光子计数模式，或使得X射线探测器工作在能量积分模式，或使得X射线探测器工作在光子计数模式和能量积分模式。In the above X-ray detector, both sides of the perovskite crystal substrate 10 are provided with carrier transport layers (21, 22), and an electrode layer (31) is provided on the two carrier transport layers (21, 22). , 32), a readout array circuit panel (41, 42) is set on the two electrode layers (31, 32), and the signal processing circuits in the two readout array circuit panels (41, 42) are respectively The pulse counting circuit and the charge integrator circuit, by controlling the working status of the two signal processing circuits, can read out the charge signal from the signal readout electrode, making the X-ray detector work in photon counting mode, or make the X-ray detector work in energy Integration mode, or make X-ray detector work in photon counting mode and energy integration mode.
本发明中的X射线探测器利用钙钛矿材料的双载流子传输特性，可同时工作在光子计数模式和能量积分模式，或工作在光子计数模式或能量积分模式，可得到X射线的能谱信息，为成像提供更多有效信息。The X-ray detector in the present invention utilizes the dual carrier transmission characteristics of the perovskite material, and can work in the photon counting mode and the energy integration mode at the same time, or work in the photon counting mode or the energy integration mode, and can obtain the energy of X-rays. Spectral information provides more effective information for imaging.
本发明实施例中的X射线探测器利用钙钛矿材料的双载流子传输特性，利用PN结构建光伏型探测器，使得探测器具有内建电场，无需外加偏压工作，探测器在正、负电极上分别输出电子、空穴，一端采用脉冲计数电路进行光子计数，另一端采用电容积分电路进行信号积分输出，达到双模式工作的目的。即可同时工作在光子计数模式和能量积分模式，或工作在光子计数模式或能量积分模式，可得到X射线的能谱信息，为成像提供更多有效信息。The X-ray detector in the embodiment of the present invention uses the dual carrier transmission characteristics of the perovskite material and uses the PN structure to build a photovoltaic detector, so that the detector has a built-in electric field and does not require an external bias voltage to work. , The negative electrode outputs electrons and holes respectively, one end uses a pulse counting circuit for photon counting, and the other end uses a capacitor integration circuit for signal integration output, achieving the purpose of dual-mode operation. That is, it can work in the photon counting mode and the energy integration mode at the same time, or work in the photon counting mode or the energy integration mode, to obtain the energy spectrum information of the X-ray, and provide more effective information for imaging.
对应于上文实施例应用于X射线探测器，图6示出了本发明实施例提供的X射线探测器的制备方法的示意性流程图，为了便于说明，仅示出了与本发明实施例相关的部分。Corresponding to the application of the above embodiment to an X-ray detector, FIG. 6 shows a schematic flow chart of a method for preparing an X-ray detector provided by an embodiment of the present invention. The relevant part.
参见图6和图7，本发明实施例中的X射线探测器的制备方法可以包括：Referring to FIG. 6 and FIG. 7, the preparation method of the X-ray detector in the embodiment of the present invention may include:
在步骤101中，在钙钛矿晶体基板的两侧分别制备载流子传输层。In step 101, carrier transport layers are respectively prepared on both sides of the perovskite crystal substrate.
其中，可以通过蒸镀或旋涂的方法，在钙钛矿晶体基板10的两侧分别制备载流子传输层（21,22）。Wherein, the carrier transport layer (21, 22) can be prepared on both sides of the perovskite crystal substrate 10 by evaporation or spin coating.
示例性的，两层所述载流子传输层（21,22）可以分别为电子传输层和空穴传输层；其中，所述电子传输层的材质为TiO 2、SnO 2、PCBM、PTAA和ZnMgO中的一种或两种以上的组合，所述空穴传输层的材质为NiO、CuI和spiro-MeOTAD中的一种或两种以上的组合。 Exemplarily, the two carrier transport layers (21, 22) may be an electron transport layer and a hole transport layer, respectively; wherein the material of the electron transport layer is TiO 2 , SnO 2 , PCBM, PTAA and One or a combination of two or more of ZnMgO, and the material of the hole transport layer is one or a combination of two or more of NiO, CuI and spiro-MeOTAD.
在步骤102中，在两层所述载流子传输层上分别制备一层电极层。In step 102, an electrode layer is respectively prepared on the two carrier transport layers.
其中，每一所述电极层（31,32）包括由多个电极组成的二维面阵电极，且两层所述电极层（31,32）之间的各个电极一一对应。Wherein, each of the electrode layers (31, 32) includes a two-dimensional area array electrode composed of a plurality of electrodes, and each electrode between the two electrode layers (31, 32) corresponds to each other in a one-to-one correspondence.
示例性的，可以通过掩膜版蒸镀的方法，在两层所述载流子传输层（21,22）上分别制备一层电极层（31,32）。Exemplarily, one electrode layer (31, 32) can be prepared on the two carrier transport layers (21, 22) by mask evaporation method.
在步骤103中，在每层所述电极层上分别设置一层读出阵列电路面板。In step 103, a layer of readout array circuit panel is provided on each electrode layer.
其中，每一所述读出阵列电路面板上均设置有信号读出电极，且所述两层读出阵列电路面板中的信号处理电路分别为脉冲计数电路和电荷积分电路。Wherein, each of the readout array circuit panels is provided with signal readout electrodes, and the signal processing circuits in the two-layer readout array circuit panels are pulse counting circuits and charge integration circuits, respectively.
示例性的，可以通过倒装焊的方法，将两层所述读出阵列电路面板分别设置在对应的所述电极层（31,32）上。Exemplarily, the two layers of the readout array circuit panel can be respectively arranged on the corresponding electrode layers (31, 32) by means of flip-chip welding.
上述X射线探测器的制备方法，在钙钛矿晶体基板的两侧分别制备载流子传输层，在两层载流子传输层上分别制备一层电极层，在每层电极层上分别制备一层读出阵列电路面板，两层读出阵列电路面板中的信号处理电路分别为脉冲计数电路和电荷积分电路，通过控制两个信号处理电路的工作状态，能够从信号读出电极读出电荷信号，使得X射线探测器工作在光子计数模式，或使得X射线探测器工作在能量积分模式，或使得X射线探测器工作在光子计数模式和能量积分模式。In the above-mentioned preparation method of X-ray detector, carrier transport layers are prepared on both sides of the perovskite crystal substrate, one electrode layer is prepared on the two carrier transport layers, and each electrode layer is prepared separately One-layer readout array circuit panel, and two-layer readout array circuit panel. The signal processing circuits in the two-layer readout array circuit panel are pulse counting circuit and charge integration circuit. By controlling the working status of the two signal processing circuits, the charge can be read out from the signal readout electrode. Signal to make the X-ray detector work in the photon counting mode, or make the X-ray detector work in the energy integration mode, or make the X-ray detector work in the photon counting mode and the energy integration mode.
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述或记载的部分，可以参见其它实施例的相关描述。In the above-mentioned embodiments, the description of each embodiment has its own focus. For parts that are not described in detail or recorded in an embodiment, reference may be made to related descriptions of other embodiments.
以上所述实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围，均应包含在本发明的保护范围之内。The above-mentioned embodiments are only used to illustrate the technical solutions of the present invention, but not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that it can still implement the foregoing various embodiments. The technical solutions recorded in the examples are modified, or some of the technical features are equivalently replaced; these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should be included in Within the protection scope of the present invention.

Claims (10)

  1. 一种X射线探测器，其特征在于，包括： An X-ray detector, characterized in that it comprises:
    钙钛矿晶体基板，两侧面均设置有载流子传输层；Perovskite crystal substrate with carrier transport layers on both sides;
    两层电极层，分别设置在两层所述载流子传输层上；其中，每一所述电极层包括由多个电极组成的二维面阵电极，且两层所述电极层之间的各个电极一一对应；Two electrode layers are respectively arranged on the two carrier transport layers; wherein, each of the electrode layers includes a two-dimensional area array electrode composed of a plurality of electrodes, and the gap between the two electrode layers Each electrode has a one-to-one correspondence;
    两层读出阵列电路面板，分别设置在所述两层电极层上，且与各个电极连接；其中，每一所述读出阵列电路面板上均设置有信号读出电极，且所述两层读出阵列电路面板的信号处理电路分别为脉冲计数电路和电荷积分电路。Two layers of readout array circuit panels are respectively arranged on the two electrode layers and connected to each electrode; wherein, each of the readout array circuit panels is provided with signal readout electrodes, and the two layers The signal processing circuits of the readout array circuit panel are respectively a pulse counting circuit and a charge integration circuit.
  2. 如权利要求1所述的X射线探测器，其特征在于，所述脉冲计数电路包括多个像素单元，每个像素单元对应一个脉冲计数子电路，且与对应的电极层中的一个电极对应连接。 The X-ray detector according to claim 1, wherein the pulse counting circuit comprises a plurality of pixel units, and each pixel unit corresponds to a pulse counting sub-circuit, and is connected to an electrode in the corresponding electrode layer. .
  3. 如权利要求1所述的X射线探测器，其特征在于，所述电荷积分电路包括多个像素电容，每个像素电容与对应的电极层中的一个电极对应连接，用于存储对应电极产生的电荷信号； The X-ray detector according to claim 1, wherein the charge integration circuit includes a plurality of pixel capacitors, and each pixel capacitor is connected to an electrode in a corresponding electrode layer, and is used to store the output generated by the corresponding electrode. Charge signal
    其中，通过选通信号读出存储在所述像素电容中的电荷信号。Wherein, the charge signal stored in the pixel capacitor is read out through the strobe signal.
  4. 如权利要求1至3任一项所述的X射线探测器，其特征在于，所述脉冲计数电路对应的读出阵列电路面板为CMOS阵列面板，所述电荷积分电路对应的读出阵列电路面板为CMOS阵列面板或TFT阵列面板。 The X-ray detector according to any one of claims 1 to 3, wherein the readout array circuit panel corresponding to the pulse counting circuit is a CMOS array panel, and the readout array circuit panel corresponding to the charge integration circuit It is a CMOS array panel or a TFT array panel.
  5. 如权利要求1至3任一项所述的X射线探测器，其特征在于，两层所述载流子传输层分别为电子传输层和空穴传输层； The X-ray detector according to any one of claims 1 to 3, wherein the two carrier transport layers are an electron transport layer and a hole transport layer;
    其中，所述电子传输层的材质为TiO 2、SnO 2、PCBM、PTAA和ZnMgO中的一种或两种以上的组合，所述空穴传输层的材质为NiO、CuI和spiro-MeOTAD中的一种或两种以上的组合。 Wherein, the material of the electron transport layer is one or a combination of two or more of TiO 2 , SnO 2 , PCBM, PTAA and ZnMgO, and the material of the hole transport layer is NiO, CuI and spiro-MeOTAD. One or a combination of two or more.
  6. 如权利要求5所述的X射线探测器，其特征在于，所述两层电极层分别为阳极电极层和阴极电极层； 8. The X-ray detector according to claim 5, wherein the two electrode layers are an anode electrode layer and a cathode electrode layer;
    其中，所述阳极电极层设置在所述空穴传输层上，所述阴极电极层设置在所述电子传输层上。Wherein, the anode electrode layer is provided on the hole transport layer, and the cathode electrode layer is provided on the electron transport layer.
  7. 一种X射线探测器的制备方法，其特征在于，包括： A method for preparing an X-ray detector, which is characterized in that it comprises:
    在钙钛矿晶体基板的两侧分别制备载流子传输层；Prepare carrier transport layers on both sides of the perovskite crystal substrate;
    在两层所述载流子传输层上分别制备一层电极层；其中，每一所述电极层包括由多个电极组成的二维面阵电极，且两层所述电极层之间的各个电极一一对应；An electrode layer is respectively prepared on the two carrier transport layers; wherein each electrode layer includes a two-dimensional area array electrode composed of a plurality of electrodes, and each of the electrode layers between the two electrode layers One-to-one correspondence between electrodes;
    在每层所述电极层上分别设置一层读出阵列电路面板；其中，每一所述读出阵列电路面板上均设置有信号读出电极，且所述两层读出阵列电路面板中的信号处理电路分别为脉冲计数电路和电荷积分电路。A layer of readout array circuit panels is provided on each of the electrode layers; wherein, each of the readout array circuit panels is provided with signal readout electrodes, and the two layers of readout array circuit panels are The signal processing circuit is a pulse counting circuit and a charge integrating circuit.
  8. 如权利要求7所述的X射线探测器的制备方法，其特征在于，通过蒸镀或旋涂的方法，在所述钙钛矿晶体基板的两侧分别制备所述载流子传输层。 8. The method for manufacturing an X-ray detector according to claim 7, wherein the carrier transport layer is prepared on both sides of the perovskite crystal substrate by evaporation or spin coating.
  9. 如权利要求7所述的X射线探测器的制备方法，其特征在于，通过掩膜版蒸镀的方法，在两层所述载流子传输层上分别制备一层所述电极层。 7. The method of manufacturing an X-ray detector according to claim 7, wherein the electrode layer is prepared on the two carrier transport layers by mask evaporation method.
  10. 如权利要求7所述的X射线探测器的制备方法，其特征在于，通过倒装焊的方法，将两层所述读出阵列电路面板分别设置在对应的所述电极层上。 8. The method for manufacturing an X-ray detector according to claim 7, wherein the two layers of the readout array circuit panel are respectively arranged on the corresponding electrode layers by means of flip-chip soldering.
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