CN113257847A - Perovskite anisotropy enhanced high-resolution gamma ray imaging method - Google Patents
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- 230000005251 gamma ray Effects 0.000 title claims abstract description 55
- 238000003384 imaging method Methods 0.000 title claims abstract description 35
- 239000013078 crystal Substances 0.000 claims abstract description 104
- 238000000034 method Methods 0.000 claims abstract description 50
- 238000001514 detection method Methods 0.000 claims abstract description 34
- 239000000969 carrier Substances 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims abstract description 12
- 230000012010 growth Effects 0.000 claims description 11
- 230000005855 radiation Effects 0.000 claims description 8
- 239000011148 porous material Substances 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 229910001385 heavy metal Inorganic materials 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 claims description 4
- 238000009777 vacuum freeze-drying Methods 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 12
- 230000005684 electric field Effects 0.000 abstract description 11
- 230000009471 action Effects 0.000 abstract description 7
- 230000006798 recombination Effects 0.000 abstract description 5
- 238000005215 recombination Methods 0.000 abstract description 5
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 239000006096 absorbing agent Substances 0.000 description 6
- 239000008710 crystal-8 Substances 0.000 description 6
- 239000011149 active material Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001534 heteroepitaxy Methods 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000009206 nuclear medicine Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
Abstract
The invention discloses a perovskite anisotropy enhanced high-resolution gamma ray imaging method. The perovskite single crystal structure is regulated and controlled by a process treatment method, so that the transverse carrier mobility is reduced, and the carrier service life is shortened. In the gamma ray detection imaging process, photon-generated carriers are transported from the top electrode to the bottom electrode under the action of a longitudinal electric field to form detection signals. The photon-generated carriers are subjected to the action of the fringe field at the same time to generate transverse diffusion. However, since the mobility-lifetime product of the photogenerated carriers diffused in the lateral direction becomes small, the probability of recombination of the photogenerated electrons and holes involved in the lateral diffusion increases. A large number of laterally diffused photo-generated electrons and holes are recombined before reaching the collecting electrode, so that crosstalk charge signals of adjacent pixels are reduced, and the imaging spatial resolution of gamma rays is finally improved.
Description
Technical Field
The invention belongs to the field of a gamma ray imaging method with high spatial resolution, and particularly relates to a perovskite anisotropy enhanced high-resolution gamma ray imaging method.
Background
Gamma-ray detection has important application in the fields of nuclear medicine, aerospace, industrial nondestructive detection and the like, and people are always dedicated to developing high-performance gamma-ray detectors. Since gamma-ray photons are high in energy and strong in penetration, gamma-ray detection active materials need to have a high average atomic number (Z) and thickness to sufficiently absorb gamma-photons. High-purity semiconductor single crystals are generally selected as radiation detection active materials, and in the 70 s, gamma ray detection using high-purity ge (hpge) has been proposed to achieve good energy resolution. But requires liquid nitrogen cooling due to its small band gap. For the detection of gamma rays at room temperature, compound semiconductor crystals are used as active materials for gamma ray detection, such as CdTe, Cd1- xZnxTe (CZT), and TlBr. These gamma ray detectors have been used commercially. However, the existing compound semiconductor gamma-ray detector has the problems of complex preparation technology, high cost, incompatibility of a sensing unit and a reading circuit process, and difficulty in considering energy resolution, spatial resolution, sensitivity, working temperature, cost and the like in gamma-ray detection imaging.
Because gamma ray detection requires a very thick photon absorber, the spatial resolution of gamma ray imaging is lower than that of lower energy photon (e.g., visible light, X-ray, etc.) imaging. The reduction in spatial resolution during gamma ray imaging is illustrated in figure 1. In the indirect detection of fig. 1(a), gamma ray photons 21 are incident on a scintillator 22 to produce scintillating fluorescence 23 (visible light) which is converted to an electrical signal by a conventional visible light detector 24. However, due to the scattering phenomenon of visible light, the scintillation fluorescence 23 scatters in the scintillator 22, resulting in expansion 25 of the fluorescence spot, and finally, the spatial resolution of the imaging of indirectly detected gamma rays is reduced. In the gamma-ray direct detection structure shown in fig. 1(b), the detection active material layer 26 absorbs the gamma-ray photons 21, directly converting them into photogenerated carriers 15 (electron/hole pairs). Bias photogenerated carriers 15 arranged between the common electrode 4 and the pixel electrode 5 drift to the upper and lower electrodes under the action of an external electric field to form a detection electric signal. Although the direct gamma ray detection avoids the scattering effect of the scintillation fluorescence, due to the edge electric field existing between the upper electrode and the lower electrode, the photo-generated carriers 15 can generate lateral diffusion under the action of the edge electric field, so that the charge crosstalk 27 between adjacent pixel electrodes is caused, and finally the imaging resolution of the gamma ray is reduced.
The perovskite material has excellent photoelectric property, and has good application prospect in the fields of photovoltaic solar cells, UV/Vis/NIR photoelectric detection, light-emitting diodes and the like. The perovskite single crystal has wide band gap (about 3.1ev), contains heavy elements such as lead and halogen, and has the carrier mobility as high as 600cm2V-1S-1The method has the advantages that the service life of the current carrier is as long as several microseconds, the ionization energy reaches 3-5 eV, and the method can be used for preparing the material with low cost by a solution method. In addition, halogen perovskites also have very good radiation resistance characteristics compared to other semiconductors. Research shows that the formation energy of deep level carrier traps in many halogen perovskite crystals is very large, and therefore point defects caused by irradiation are mostly shallow level traps. The tolerance capability of the defects improves the radiation resistance of the perovskite crystal. Due to the above-mentioned advantages of perovskite crystals, it is considered as a next-generation gamma-ray direct detection material. Perovskite crystals are applied to the field of high-energy ray detection in succession by research teams at home and abroad since 2015, and important research results are obtained. These findings indicate that the perovskite crystal elements can be optimizedThe element components and the preparation process can improve the quantum efficiency of gamma photon detection. Meanwhile, it is also proposed to improve the spatial resolution of gamma ray imaging by optimally designing the electrode structure to suppress the fringe field. The united states University of North Carolina study group proposed a typical technical solution, using conventional top and bottom electrodes, to generate an edge field in the detector to laterally diffuse the photogenerated carriers. Huang research group divides the top electrode into two parts by arranging a separation ring on the top electrode, and the electrode can inhibit fringe fields and reduce the lateral diffusion of photon-generated carriers. However, as the thickness of the perovskite crystal increases, the ratio of the size of the isolating ring to the thickness of the perovskite crystal becomes smaller, and the inhibiting effect of the isolating ring on the fringe field is weakened.
The invention provides a high-resolution gamma-ray imaging method for direct detection by utilizing the structural characteristics of perovskite materials and the advantages of a solution method preparation process, and can effectively overcome the problem that an electrode structure inhibits insensitivity of an edge field.
Disclosure of Invention
The invention aims to provide a high-resolution gamma ray imaging method with enhanced perovskite anisotropy to solve the technical problem.
In order to solve the technical problems, the specific technical scheme of the invention is as follows:
a perovskite anisotropy enhanced high resolution gamma ray imaging method comprising the steps of:
step one, processing the perovskite crystal by adopting a process method to enable the structure and the electrical property of the perovskite crystal to have anisotropy;
and secondly, by utilizing the anisotropy of the perovskite crystal, the photon-generated carriers generated by gamma ray photons are quickly transmitted in the longitudinal direction to form effective detection electric signals, the photon-generated carriers are low in transverse transmission speed and short in service life, transverse charge crosstalk between adjacent electrodes is reduced, and the gamma ray imaging resolution is improved.
Furthermore, the thickness of the perovskite crystal is larger than 1 cm, the perovskite crystal is used as an absorption and conversion layer of gamma photons, and the gamma ray detection sensitivity is improved by utilizing the absorption coefficient of the perovskite crystal to the gamma photons and the carrier transport performance of the perovskite crystal.
Further, the process method is a template method and comprises the following steps:
and 3, taking out the perovskite crystal in the step 2, immersing the perovskite crystal in the precursor liquid at normal temperature and normal pressure, growing the perovskite crystal for the second time by a temperature-changing method or an inverse temperature method, filling the hollow pore of the first growth template with the perovskite crystal grown for the second time, and forming the anisotropic perovskite crystal by the template grown for the first time and the perovskite crystal column grown for the second time.
Further, the process method is a directional irradiation method and comprises the following steps:
and 2, processing the perovskite crystal by using radiation with high dose rate through a mask.
Further, the process method is a heteroepitaxy method, and in the process of growing crystals in a solution, the heterometal salt is added into the forward driving liquid, and some heteroepitaxy channels are formed in the crystals.
The perovskite anisotropy enhanced high-resolution gamma ray imaging method has the following advantages:
1. the invention utilizes the anisotropy of perovskite crystals, and increases the recombination probability of transverse diffusion electron/hole pairs by reducing the mobility of transverse carriers and shortening the service life of the carriers, thereby reducing the signal crosstalk between pixel electrodes. The scheme solves the problems that in a conventional gamma ray detection structure, the change of the end surface electrode structure is insensitive to the regulation of the edge field, and further the crosstalk inhibition of adjacent pixel electrodes is insufficient. In addition, as the thickness of the perovskite crystal increases, the suppression effect of anisotropic electrical properties on transverse diffusion carrier signal crosstalk is enhanced, and the conventional gamma ray detection structure is opposite to the transverse diffusion carrier signal crosstalk.
2. In the technical scheme provided by the invention, the longitudinal carrier transmission performance of the perovskite crystal is basically maintained unchanged. Therefore, other performances of gamma ray detection, such as detection sensitivity, energy resolution, response speed and the like, can be substantially maintained while reducing signal crosstalk caused by lateral carrier diffusion.
Drawings
FIG. 1 is a schematic diagram of a conventional gamma ray detection structure;
FIG. 1(a) is a schematic diagram of fluorescence scattering in an indirect detection configuration;
FIG. 1(b) is a schematic diagram of fringe field induced lateral carrier diffusion in a direct-detection structure;
FIG. 2(a) is a schematic diagram of perovskite crystals with higher defect density grown in a vacuum freeze-drying environment and hollow channels formed;
FIG. 2(b) is a schematic view of a second growth of a low defect density perovskite crystal at atmospheric pressure, forming a perovskite crystal pillar along a hollow pore;
FIG. 2(c) is a schematic diagram of a gamma ray imaging device with a top electrode and a pixelated bottom electrode;
FIG. 3(a) is a schematic view of applying high dose rate gamma-ray irradiation to perovskite crystals through a heavy metal reticle;
FIG. 3(b) is a schematic diagram showing the distortion of perovskite crystal lattice after being irradiated by gamma rays with high dose rate, and the anisotropy is enhanced;
FIG. 4 is a schematic illustration of enhancement of the anisotropy of perovskite crystals by means of epitaxy suppression;
FIG. 5 is a schematic diagram of the reduction of spatial resolution caused by the lateral diffusion of carriers in a conventional gamma-ray detection imaging structure;
FIG. 6 is a schematic diagram of the present invention for increasing the recombination of laterally diffused photogenerated carriers by anisotropic perovskite crystals.
The notation in the figure is: 1. a first perovskite crystal; 2. a hollow channel; 3. a perovskite crystal pillar; 4. a common electrode; 5. a pixel electrode; 6. a line of radiation; 7. a mask plate; 8. a second perovskite crystal; 9. distortion of the crystal lattice; 10. tertiary perovskite crystals; 11. a heteroepitaxial channel; 12. gamma photons; 13. a fourth perovskite crystal; 14. an edge electric field; 15. a photogenerated carrier; 16. a row driving circuit; 17. an analog-to-digital converter; 18. an input channel; 19. an output channel; 20. a fifth perovskite crystal; 21. gamma ray photons; 22. a scintillator; 23. flashing fluorescence; 24; a visible light detector; 25. expanding a fluorescent light spot; 26. an active material layer; 27. charge cross talk.
Detailed Description
For better understanding of the objects, structure and function of the present invention, a perovskite anisotropy-enhanced high-resolution gamma ray imaging method of the present invention will be described in further detail with reference to the accompanying drawings.
The invention first prepares anisotropic perovskite crystals. The longitudinal carrier mobility of the anisotropic perovskite crystal is high, and the carrier service life is long; the transverse carrier mobility of the perovskite crystal is small, and the carrier service life is short. And respectively depositing a top electrode and a bottom electrode on the upper end surface and the lower end surface of the anisotropic perovskite crystal by methods such as evaporation and the like, and applying bias voltage to the top electrode and the bottom electrode to form a bias electric field. When gamma photons are incident, they are absorbed by the anisotropic perovskite crystal, generating photogenerated carriers (electron/hole pairs). The photon-generated electron/hole pairs form drift motion under the action of a bias electric field, and because the longitudinal carrier mobility of the anisotropic perovskite crystal is high and the service life of the carrier is long, the probability of generating recombination of the longitudinal photon-generated carrier is low, and most of the photon-generated carrier can be received by the electrode to form a detection electric signal. Besides the vertical drift motion, the photogenerated carriers are subjected to the edge electric field and also generate the lateral diffusion. Because the transverse carrier mobility of the anisotropic perovskite crystal is low and the service life is short, the probability of generating recombination of transversely diffused photogenerated electrons and photogenerated holes is high, the number of crosstalk photogenerated carriers received by adjacent electrodes is reduced, and the resolution of gamma ray imaging can be improved.
The first example employs a template method to prepare anisotropic perovskite crystals. As shown in fig. 2(a), first, a first perovskite crystal 1 is grown by a temperature-variable method or an inverse temperature method in a vacuum freeze-drying experimental apparatus. Since the saturation concentration of the perovskite precursor liquid is low at low atmospheric pressure, the growth rate of the first perovskite crystal 1 is fast. However, the grown first perovskite crystal 1 has many defects, low carrier mobility and short carrier lifetime. By controlling the pressure of the growth system, a plurality of through hollow channels 2 may be formed in the first perovskite crystal 1. The first perovskite crystal 1 is taken out, immersed in the precursor solution at normal temperature and pressure, and the first perovskite crystal 1 is grown for the second time by the temperature-changing method or the inverse temperature method, as shown in fig. 2 (b). The first perovskite crystal 1 is filled in the hollow pore canal 2 of the first growth template to form a perovskite crystal column 3. Since the first perovskite crystal 1 is grown at normal pressure for the second time, the growth rate of the first perovskite crystal 1 is low, but the defects are few. Therefore, the perovskite crystal pillar 3 has high carrier mobility and long carrier lifetime. Finally, as shown in fig. 2(c), an anisotropic photon absorber is formed by the first perovskite crystal 1 with low carrier mobility and the perovskite crystal pillar 3 with high carrier mobility, and the common electrode 3 and the pixel electrode 4 are deposited on the top surface and the bottom surface of the anisotropic photon absorber by an evaporation method, so that the perovskite crystal gamma-ray imaging device is formed.
The second example uses a directional irradiation method to prepare anisotropic perovskite crystals. As shown in fig. 3 (a). Firstly, preparing an ultra-thick second perovskite crystal 8 by adopting a conventional inverse temperature or temperature change method, wherein the second perovskite crystal 8 is an isotropic crystal. Then, a mask 7 made of heavy metal is provided on the top of the second perovskite crystal 8, and the second perovskite crystal 8 is post-processed again by a radiation ray 6 (e.g., gamma ray) at a high dose rate through the mask 7. As shown in fig. 3(b), the second perovskite crystal 8 has lattice distortion 9 and even has defects such as dislocation and fracture under the action of the radiation 6 at a high dose rate, thereby enhancing the anisotropy of the second perovskite crystal 8.
A third example prepared anisotropic perovskite crystals using a heteroepitaxial method, as shown in fig. 4. During the solution growth of the third perovskite crystal 10, a proper amount of heterogeneous metal salt is added to the precursor solution, and some heteroepitaxial channels 11 are formed in the crystal. In this way, CdS channels can be formed in CdSe crystal, AlN channels can be formed in GaN crystal, MAPbBr3PbS channels are formed in the crystal, etc. Since the lattice type and lattice constant of the heteroepitaxial channels 11 are different from those of the third perovskite crystal 10, the mobility and lifetime of carriers in these channels vary, and thus the anisotropy of the perovskite crystal can be enhanced by the heteroepitaxial channel method.
The structure of the conventional perovskite gamma ray imaging device is shown in fig. 5, an isotropic fourth perovskite crystal 13 is used as a gamma ray photon absorber, a common electrode 4 is prepared on the top surface of the photon absorber by an evaporation or sputtering method, and an array pixel electrode 5 is prepared on the bottom surface of the photon absorber by an evaporation or sputtering method and is connected with an array reading circuit formed by a thin film transistor or a field effect transistor. A line driving circuit 16 and an analog-to-digital converter 17 are provided around the line driving circuit, and a control signal is input through an input channel 18, and gamma ray image data is output through an output channel 19. Due to the structural features of the common electrode 4 and the pixel electrode 5, an edge electric field 14 is formed in the detecting unit. Upon incidence of high energy gamma photons 12, photogenerated carriers 15 (electron/hole pairs) are generated in the perovskite crystal. The photo-generated carriers 15 generate lateral diffusion of carriers under the action of the edge electric field 14, thereby causing the reduction of the imaging resolution of gamma rays.
Fig. 6 is a high resolution gamma ray imaging device proposed by the present invention, which employs an isotropic perovskite crystal substituted with an anisotropic fifth perovskite crystal 20, as compared to the conventional imaging device of fig. 5. Although the fringe electric field 14 is still present, due to the low carrier mobility and short lifetime of the lateral carrier drift, the laterally diffused photogenerated carriers 15 (electron/hole pairs) are recombined before reaching the collecting electrode, and no cross-talk electrical signal is generated. Therefore, the invention reduces the signal crosstalk among different pixels and improves the imaging resolution.
It is to be understood that the present invention has been described with reference to certain embodiments, and that various changes in the features and embodiments, or equivalent substitutions may be made therein by those skilled in the art without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
Claims (5)
1. A perovskite anisotropy enhanced high resolution gamma ray imaging method, comprising the steps of:
step one, processing the perovskite crystal by adopting a process method to enable the structure and the electrical property of the perovskite crystal to have anisotropy;
and secondly, by utilizing the anisotropy of the perovskite crystal, photon-generated carriers generated by gamma ray photons are quickly transmitted in the longitudinal direction to form effective detection electric signals, the photon-generated carriers are low in transverse transmission speed and short in service life, and the photon-generated carriers which are transversely diffused are compounded before reaching the electrodes, so that transverse charge crosstalk between adjacent electrodes is reduced, and the gamma ray imaging resolution is improved.
2. The perovskite anisotropy enhanced high-resolution gamma ray imaging method according to claim 1, wherein the thickness of the perovskite crystal is more than 1 cm, and the perovskite crystal is used as an absorption and conversion layer of gamma photons, and the absorption coefficient of the perovskite crystal to the gamma photons and the carrier transport property of the perovskite crystal are utilized to improve the detection sensitivity of the gamma rays.
3. The perovskite anisotropy enhanced high resolution gamma ray imaging method according to claim 1, wherein the process method is a templating method comprising the steps of:
step 1, growing perovskite crystals in a vacuum freeze-drying experimental device by adopting a temperature-changing method or an inverse temperature method;
step 2, forming a through hollow pore canal in the perovskite crystal by controlling the pressure of the growth system;
and 3, taking out the perovskite crystal in the step 2, immersing the perovskite crystal in the precursor liquid at normal temperature and normal pressure, growing the perovskite crystal for the second time by a temperature-changing method or an inverse temperature method, filling the hollow pore of the first growth template with the perovskite crystal grown for the second time, and forming the anisotropic perovskite crystal by the template grown for the first time and the perovskite crystal column grown for the second time.
4. The perovskite anisotropy enhanced high resolution gamma ray imaging method according to claim 1, wherein the process method is a directional irradiation method comprising the steps of:
step 1, preparing an ultra-thick perovskite single crystal by adopting a conventional inverse temperature or temperature change method, and arranging a mask plate prepared by heavy metal on the top of the perovskite single crystal;
and 2, processing the perovskite crystal by using radiation with high dose rate through a mask.
5. The perovskite anisotropy enhanced high resolution gamma ray imaging method according to claim 1, wherein the process is a heteroepitaxial method, and during the solution growth of crystals, a heteroepitaxial channel is formed in the crystals by adding a heterometal salt to the precursor solution.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113889548A (en) * | 2021-10-18 | 2022-01-04 | 苏州亿现电子科技有限公司 | Perovskite avalanche transistor-based high-sensitivity detection structure and preparation method thereof |
| CN114937708A (en) * | 2022-05-25 | 2022-08-23 | 华中科技大学 | All-perovskite X-ray indirect detector and preparation method thereof |
| WO2023066094A1 (en) * | 2021-10-18 | 2023-04-27 | 苏州亿现电子科技有限公司 | γ-RAY DETECTION STRUCTURE BASED ON PEROVSKITE P-I-N JUNCTION, AND CORRECTION METHOD |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108183119A (en) * | 2017-12-19 | 2018-06-19 | 东南大学 | A kind of X-ray detector and its detection method with energy resolution |
| CN111554813A (en) * | 2020-05-11 | 2020-08-18 | 吉林大学 | Controllable growth method of dodecahedral methylamine lead bromide perovskite monocrystal [110] crystal face and application of X-ray detector of dodecahedral methylamine lead bromide perovskite monocrystal |
-
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- 2021-05-12 CN CN202110519054.9A patent/CN113257847B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108183119A (en) * | 2017-12-19 | 2018-06-19 | 东南大学 | A kind of X-ray detector and its detection method with energy resolution |
| CN111554813A (en) * | 2020-05-11 | 2020-08-18 | 吉林大学 | Controllable growth method of dodecahedral methylamine lead bromide perovskite monocrystal [110] crystal face and application of X-ray detector of dodecahedral methylamine lead bromide perovskite monocrystal |
Non-Patent Citations (1)
| Title |
|---|
| 王昕: "基于钙钛矿单晶的高性能 X 射线/γ射线探测", 中国博士学位论文全文数据库, pages 39 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113889548A (en) * | 2021-10-18 | 2022-01-04 | 苏州亿现电子科技有限公司 | Perovskite avalanche transistor-based high-sensitivity detection structure and preparation method thereof |
| WO2023066094A1 (en) * | 2021-10-18 | 2023-04-27 | 苏州亿现电子科技有限公司 | γ-RAY DETECTION STRUCTURE BASED ON PEROVSKITE P-I-N JUNCTION, AND CORRECTION METHOD |
| CN113889548B (en) * | 2021-10-18 | 2024-04-09 | 苏州亿现电子科技有限公司 | High-sensitivity detection structure based on perovskite avalanche transistor and preparation method |
| CN114937708A (en) * | 2022-05-25 | 2022-08-23 | 华中科技大学 | All-perovskite X-ray indirect detector and preparation method thereof |
| CN114937708B (en) * | 2022-05-25 | 2024-04-16 | 华中科技大学 | Full perovskite X-ray indirect detector and preparation method thereof |
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