WO2021157445A1 - Plasma treatment apparatus and gas flow-rate control method - Google Patents
Plasma treatment apparatus and gas flow-rate control method Download PDFInfo
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- WO2021157445A1 WO2021157445A1 PCT/JP2021/002858 JP2021002858W WO2021157445A1 WO 2021157445 A1 WO2021157445 A1 WO 2021157445A1 JP 2021002858 W JP2021002858 W JP 2021002858W WO 2021157445 A1 WO2021157445 A1 WO 2021157445A1
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- gas
- flow rate
- plasma processing
- plasma
- adjusting mechanism
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Definitions
- the present disclosure relates to a plasma processing apparatus and a gas flow rate adjusting method.
- a substrate processing apparatus that supplies a desired gas into a processing container and performs a desired treatment (for example, a film forming process) on a substrate placed on a mounting table provided in the processing container.
- Patent Document 1 includes a first gas shower unit that supplies a first gas into a chamber and a second gas shower unit that supplies a second gas into the chamber, and introduces a second gas.
- a plasma processing apparatus is disclosed in which the portions have a plurality of nozzles arranged at equal intervals on the same circumference.
- the present disclosure provides a plasma processing apparatus and a gas flow rate adjusting method for improving the in-plane uniformity of processing applied to a substrate.
- a processing container accommodating a mounting table on which a substrate is placed, a gas supply unit for supplying gas to the processing container, and plasma are generated in the processing container.
- a plasma processing apparatus comprising a plasma generating unit for the gas supply, the gas supply unit having a plurality of gas nozzles arranged in the circumferential direction, and a flow rate adjusting mechanism for adjusting the flow rate of the plurality of gas nozzles. ..
- FIG. 3 is a cross-sectional view showing the microwave introduction mechanism shown in FIG.
- the perspective view which shows the antenna part of the microwave introduction mechanism shown in FIG. The plan view which shows the plane antenna of the microwave introduction mechanism shown in FIG.
- the bottom view of the top wall of the processing container shown in FIG. The horizontal sectional view of the side wall of the processing container shown in FIG.
- FIG. 1 An example of a graph showing changes in the film thickness of the SiN film with respect to the circumferential direction in the inner peripheral portion, the intermediate portion, and the outer peripheral portion of the substrate in the reference example.
- the schematic diagram which shows an example of gas flow rate adjustment by a flow rate adjustment mechanism.
- the graph which shows the film thickness of the SiN film formed on the outer peripheral part of a substrate by the difference of a gas supply position.
- the graph which shows the film thickness of the SiN film formed on the substrate by the difference of a gas supply position.
- the schematic diagram which shows an example of another flow rate adjustment mechanism.
- a flowchart illustrating a gas flow rate adjusting method The block diagram which shows an example of the adjustment content determination device.
- FIG. 1 is a schematic cross-sectional view showing an example of the plasma processing apparatus 1 according to the embodiment.
- FIG. 2 is an explanatory diagram showing an example of the configuration of the control unit 8 shown in FIG.
- the plasma processing apparatus 1 according to the present embodiment involves a plurality of continuous operations, and for example, a film forming process, a diffusion process, an etching process, and an ashing process are performed on a substrate W, for example, a semiconductor wafer for manufacturing a semiconductor device. It is a device that performs predetermined processing such as.
- the plasma processing apparatus 1 is a film forming apparatus for forming a SiN film on the substrate W by plasma CVD using a raw material gas containing Si and a nitride gas will be described as an example.
- the plasma processing device 1 includes a processing container 2, a mounting table 21, a gas supply mechanism 3, an exhaust device 4, a microwave introduction module 5, and a control unit 8.
- the processing container 2 houses the substrate W, which is the object to be processed.
- the mounting table 21 is arranged inside the processing container 2 and has a mounting surface 21a on which the substrate W is mounted.
- the gas supply mechanism 3 supplies gas into the processing container 2.
- the exhaust device 4 decompresses and exhausts the inside of the processing container 2.
- the microwave introduction module 5 introduces microwaves for generating plasma into the processing container 2.
- the control unit 8 controls each unit of the plasma processing device 1.
- the processing container 2 has, for example, a substantially cylindrical shape.
- the processing container 2 is made of a metal material such as aluminum and an alloy thereof.
- the microwave introduction module 5 is arranged above the processing container 2 and functions as a plasma generation unit that introduces an electromagnetic wave (microwave in this embodiment) into the processing container 2 and generates plasma.
- the processing container 2 has a plate-shaped top wall 11, a bottom wall 13, and a side wall 12 that connects the top wall 11 and the bottom wall 13.
- the top wall 11 has a plurality of openings.
- the side wall 12 has a carry-in / out port 12a for carrying in / out the substrate W to / from a transport chamber (not shown) adjacent to the processing container 2.
- a gate valve G is arranged between the processing container 2 and the transport chamber (not shown).
- the gate valve G has a function of opening and closing the carry-in outlet 12a.
- the gate valve G airtightly seals the processing container 2 in the closed state, and enables the substrate W to be transferred between the processing container 2 and the transport chamber (not shown) in the open state.
- the bottom wall 13 has a plurality of (two in FIG. 1) exhaust ports 13a.
- the plasma processing device 1 further has an exhaust pipe 14 that connects the exhaust port 13a and the exhaust device 4.
- the exhaust device 4 has an APC valve and a high-speed vacuum pump capable of rapidly depressurizing the internal space of the processing container 2 to a predetermined degree of vacuum. Examples of such a high-speed vacuum pump include a turbo molecular pump and the like. By operating the high-speed vacuum pump of the exhaust device 4, the internal space of the processing container 2 is reduced to a predetermined degree of vacuum, for example, 0.133 Pa.
- the plasma processing device 1 further has a support member 22 that supports the mounting table 21 in the processing container 2, and an insulating member 23 provided between the support member 22 and the bottom wall 13.
- the mounting table 21 is for mounting the substrate W horizontally.
- the support member 22 has a cylindrical shape extending from the center of the bottom wall 13 toward the internal space of the processing container 2.
- the mounting table 21 and the support member 22 are formed of, for example, aluminum or the like whose surfaces have been anodized (anodized).
- the plasma processing device 1 further includes a high-frequency bias power supply 25 that supplies high-frequency power to the mounting table 21, and a matching unit 24 provided between the mounting table 21 and the high-frequency bias power supply 25.
- the high frequency bias power supply 25 supplies high frequency power to the mounting table 21 in order to draw ions into the substrate W.
- the matching device 24 has a circuit for matching the output impedance of the high-frequency bias power supply 25 with the impedance on the load side (mounting table 21 side).
- the plasma processing device 1 may further have a temperature control mechanism (not shown) for heating or cooling the mounting table 21.
- the temperature control mechanism controls, for example, the temperature of the substrate W in the range of 25 ° C. (room temperature) to 900 ° C.
- the plasma processing device 1 includes gas supply units 16 to 18 for supplying gas into the processing container 2.
- the first gas supply unit 16 has a gas introduction path 161, a gas diffusion space 162, and a gas nozzle 163.
- the gas introduction path 161 communicates with the gas diffusion space 162 and introduces the gas supplied from the gas supply mechanism 3 into the gas diffusion space 162.
- the gas diffusion space 162 is formed in a ring shape in the top wall 11.
- the gas diffusion space 162 may be divided in the circumferential direction (see FIG. 7 described later).
- the gas introduced from the gas introduction path 161 diffuses in the gas diffusion space 162.
- a plurality of gas nozzles 163 are connected to the gas diffusion space 162.
- the gas nozzle 163 is arranged in the circumferential direction (see FIG. 7 described later), and projects vertically from the lower surface of the top wall 11 constituting the processing container 2.
- the gas nozzle 163 vertically supplies (spouts) gas into the processing container 2 from the gas supply hole 164 formed at the tip thereof.
- the second gas supply unit 17 has a gas introduction path 171, a gas diffusion space 172, and a gas nozzle 173.
- the gas introduction path 171 communicates with the gas diffusion space 172 and introduces the gas supplied from the gas supply mechanism 3 into the gas diffusion space 172.
- the gas diffusion space 172 is formed in an annular shape in the side wall 12.
- the gas diffusion space 172 may be divided in the circumferential direction (see FIG. 8 to be described later).
- the gas introduced from the gas introduction path 171 diffuses in the gas diffusion space 172.
- a plurality of gas nozzles 173 are connected to the gas diffusion space 172.
- the gas nozzle 173 is arranged in the circumferential direction (see FIG. 8 described later), and projects horizontally from the inner wall surface of the side wall 12 constituting the processing container 2.
- the gas nozzle 173 supplies gas into the processing container 2 from the gas supply hole 174 formed at the tip thereof.
- the gas supply hole 174 of the second gas supply unit 17 is provided outside the gas supply hole 164 of the first gas supply unit 16 in the radial direction of the processing container 2.
- the gas nozzle 173 horizontally supplies (spouts) gas into the processing container 2 from the radial outside of the gas nozzle 163. Supply.
- the third gas supply unit 18 has a gas introduction path 181, a gas diffusion space 182, and a gas nozzle 183.
- the gas introduction path 181 communicates with the gas diffusion space 182 and introduces the gas supplied from the gas supply mechanism 3 into the gas diffusion space 182.
- the gas diffusion space 182 is formed in a ring shape in the top wall 11 (see FIG. 7 described later).
- the gas diffusion space 182 may be divided in the circumferential direction.
- the gas introduced from the gas introduction path 181 diffuses in the gas diffusion space 182.
- a plurality of gas nozzles 183 are connected to the gas diffusion space 182.
- the gas nozzle 183 is arranged in the circumferential direction (see FIG. 7 described later), and projects vertically from the lower surface of the top wall 11 constituting the processing container 2.
- the gas nozzle 183 supplies gas into the processing container 2 from the gas supply hole 184 formed at the tip thereof.
- the gas supply hole 184 of the third gas supply unit 18 is formed at a position higher than the gas supply hole 164 of the first gas supply unit 16 and the gas supply hole 174 of the second gas supply unit 17. ing.
- the gas nozzle 183 vertically supplies (spouts) gas into the processing container 2 from a position higher than the gas nozzle 163.
- the vertical direction in which the gas nozzles 163 and 183 eject gas includes a broad vertical direction such as inward or outward slightly than vertical.
- the horizontal direction in which the gas nozzle 173 ejects gas includes a broad horizontal direction such as a little upward or downward with respect to the horizontal.
- the gas supply units 16 to 18 have a flow rate adjusting mechanism for adjusting the flow rate of the gas supplied into the processing container 2 for each gas nozzle 163, 173, 183.
- each gas nozzle 163, 173, 183 is configured to be replaceable.
- the flow rate of the gas supplied from each gas nozzle 163, 173, 183 into the processing container 2 can be individually adjusted by replacing the gas nozzle with a gas nozzle having a different nozzle diameter and nozzle conductance.
- the gas supply source 31 is used as a gas supply source for, for example, a rare gas for plasma generation, a gas used for an oxidation treatment, a nitriding treatment, a film forming treatment, an etching treatment, and an ashing treatment.
- a rare gas for plasma generation for example, a gas used for an oxidation treatment, a nitriding treatment, a film forming treatment, an etching treatment, and an ashing treatment.
- the gas that is difficult to decompose is supplied from the gas nozzle 183 of the third gas supply unit 18 into the processing container 2, and the gas that is easily decomposed is supplied from the gas nozzle 163 and the second gas supply unit 17 of the first gas supply unit 16. It is supplied into the processing container 2 from the gas nozzle 173.
- the N 2 gas that is difficult to decompose is introduced from the gas nozzle 183, and the silane gas that is easily decomposed is introduced from the gas nozzle 163 and the gas nozzle 173.
- the Silane gas that is easily decomposed is introduced from the gas nozzle 163 and the gas nozzle 173.
- the gas supply mechanism 3 includes a gas supply device 3a including a gas supply source 31, a pipe 32a connecting the gas supply source 31 and the first gas supply unit 16, and the gas supply source 31 and the second gas supply unit 17. It has a pipe 32b for connecting the gas supply source 31 and a pipe 32c for connecting the gas supply source 31 and the third gas supply unit 18. Although one gas supply source 31 is shown in FIG. 1, the gas supply device 3a may include a plurality of gas supply sources depending on the type of gas used.
- the gas supply device 3a further includes a mass flow controller (not shown) and an on / off valve provided in the middle of the pipes 32a to 32c.
- the type of gas supplied into the processing container 2, the flow rate of these gases, and the like are controlled by the mass flow controller and the on / off valve.
- the control unit 8 is typically a computer.
- the control unit 8 has a process controller 81 including a CPU, a user interface 82 connected to the process controller 81, and a storage unit 83.
- the process controller 81 is a control means for controlling each component related to process conditions such as temperature, pressure, gas flow rate, high frequency power for applying bias, and microwave output in the plasma processing device 1.
- each component include a high-frequency bias power supply 25, a gas supply device 3a, an exhaust device 4, a microwave introduction module 5, and the like.
- the user interface 82 has a keyboard and a touch panel for the process manager to input commands and the like for managing the plasma processing device 1, a display for visualizing and displaying the operating status of the plasma processing device 1.
- the storage unit 83 stores a control program for realizing various processes executed by the plasma processing device 1 under the control of the process controller 81, a recipe in which processing condition data and the like are recorded, and the like.
- the process controller 81 calls and executes an arbitrary control program or recipe from the storage unit 83 as necessary, such as an instruction from the user interface 82. As a result, the desired processing is performed in the processing container 2 of the plasma processing apparatus 1 under the control of the process controller 81.
- control program and recipe for example, those stored in a computer-readable storage medium such as a flash memory, a DVD, or a Blu-ray disc can be used. Further, the above recipe can be used online by being transmitted from another device at any time via, for example, a dedicated line.
- FIG. 3 is an explanatory diagram showing the configuration of the microwave introduction module shown in FIG.
- FIG. 4 is a cross-sectional view showing the microwave introduction mechanism 63 shown in FIG.
- FIG. 5 is a perspective view showing an antenna portion of the microwave introduction mechanism 63 shown in FIG.
- FIG. 6 is a plan view showing a plane antenna of the microwave introduction mechanism 63 shown in FIG.
- the microwave introduction module 5 is provided in the upper part of the processing container 2 and introduces an electromagnetic wave (microwave) into the processing container 2.
- the microwave introduction module 5 has a top wall 11 which is a conductive member, a microwave output unit 50, and an antenna unit 60.
- the top wall 11 is arranged on the upper part of the processing container 2 and has a plurality of openings.
- the microwave output unit 50 generates microwaves and distributes the microwaves to a plurality of paths to output the microwaves.
- the antenna unit 60 introduces the microwave output from the microwave output unit 50 into the processing container 2.
- the top wall 11 of the processing container 2 also serves as a conductive member of the microwave introduction module 5.
- the microwave output unit 50 includes a power supply unit 51, a microwave oscillator 52, an amplifier 53 that amplifies the microwave oscillated by the microwave oscillator 52, and a microwave amplified by the amplifier 53. It has a distributor 54 that distributes to a plurality of paths.
- the microwave oscillator 52 oscillates microwaves at a predetermined frequency (for example, 2.45 GHz).
- the frequency of the microwave is not limited to 2.45 GHz and may be 8.35 GHz, 5.8 GHz, 1.98 GHz or the like. Further, such a microwave output unit 50 can also be applied when the microwave frequency is in the range of 800 MHz to 1 GHz, for example, 860 MHz.
- the distributor 54 distributes microwaves while matching the impedances on the input side and the output side.
- the antenna unit 60 includes a plurality of antenna modules 61.
- Each of the plurality of antenna modules 61 introduces the microwave distributed by the distributor 54 into the processing container 2.
- the configurations of the plurality of antenna modules 61 are all the same.
- Each antenna module 61 has an amplifier unit 62 that mainly amplifies and outputs the distributed microwaves, and a microwave introduction mechanism 63 that introduces the microwaves output from the amplifier unit 62 into the processing container 2. ing.
- the amplifier unit 62 includes a phase device 62A, a variable gain amplifier 62B, a main amplifier 62C, and an isolator 62D.
- the phase device 62A changes the phase of the microwave.
- the variable gain amplifier 62B adjusts the power level of the microwave input to the main amplifier 62C.
- the main amplifier 62C is configured as a solid state amplifier.
- the isolator 62D separates the reflected microwaves reflected by the antenna portion of the microwave introduction mechanism 63 and directed toward the main amplifier 62C.
- the phase device 62A changes the phase of the microwave to change the radiation characteristics of the microwave.
- the phase device 62A is used to control the directivity of microwaves and change the distribution of plasma by, for example, adjusting the phase of microwaves for each antenna module 61. If such adjustment of radiation characteristics is not performed, the phase device 62A may not be provided.
- the variable gain amplifier 62B is used for adjusting the variation of the individual antenna modules 61 and adjusting the plasma intensity. For example, by changing the variable gain amplifier 62B for each antenna module 61, the distribution of plasma in the entire processing container 2 can be adjusted.
- the main amplifier 62C includes, for example, an input matching circuit (not shown), a semiconductor amplification element, an output matching circuit, and a high Q resonance circuit (not shown).
- the semiconductor amplification element for example, GaAsHEMT, GaNHEMT, and LD (Laterally Diffused) -MOS capable of class E operation are used.
- the isolator 62D has a circulator and a dummy load (coaxial terminator).
- the circulator guides the reflected microwaves reflected by the antenna portion of the microwave introduction mechanism 63 to the dummy load.
- the dummy load converts the reflected microwaves guided by the circulator into heat.
- a plurality of antenna modules 61 are provided, and the plurality of microwaves introduced into the processing container 2 by the microwave introduction mechanism 63 of each of the plurality of antenna modules 61 are provided. , Synthesized in the processing container 2. Therefore, the individual isolators 62D may be small, and the isolators 62D can be provided adjacent to the main amplifier 62C.
- the microwave introduction mechanism 63 has a tuner 64 for matching impedance and an antenna portion 65 for radiating the amplified microwave into the processing container 2.
- the microwave introduction mechanism 63 is made of a metal material, and has a main body container 66 having a cylindrical shape extending in the vertical direction in FIG. 4 and an inner conductor extending in the same direction as the main body container 66 extends in the main body container 66. It has 67 and.
- the main body container 66 and the inner conductor 67 form a coaxial tube.
- the main body container 66 constitutes the outer conductor of the coaxial tube.
- the inner conductor 67 has a rod-like or tubular shape. The space between the inner peripheral surface of the main body container 66 and the outer peripheral surface of the inner conductor 67 forms the microwave transmission path 68.
- the antenna module 61 further has a power supply conversion unit provided on the base end side (upper end side) of the main body container 66 (not shown).
- the power supply conversion unit is connected to the main amplifier 62C via a coaxial cable.
- the isolator 62D is provided in the middle of the coaxial cable.
- the antenna portion 65 is provided on the side of the main body container 66 opposite to the power supply conversion portion. As will be described later, the portion of the main body container 66 on the proximal end side of the antenna portion 65 is within the impedance adjustment range of the tuner 64.
- the antenna portion 65 includes a flat antenna 71 connected to the lower end of the inner conductor 67, a microwave slow wave material 72 arranged on the upper surface side of the flat antenna 71, and a flat surface. It has a microwave transmission plate 73 arranged on the lower surface side of the antenna 71. The lower surface of the microwave transmission plate 73 is exposed in the internal space of the processing container 2. The microwave transmission plate 73 is fitted to the opening of the top wall 11 which is a conductive member of the microwave introduction module 5 via the main body container 66. The microwave transmission plate 73 corresponds to the microwave transmission window in the present embodiment.
- the flat antenna 71 has a disk shape. Further, the planar antenna 71 has a slot 71a formed so as to penetrate the planar antenna 71. In the example shown in FIGS. 5 and 6, four slots 71a are provided, and each slot 71a has an arc shape evenly divided into four. The number of slots 71a is not limited to four, and may be five or more, or one or more and three or less.
- the microwave slow wave material 72 is formed of a material having a dielectric constant larger than that of vacuum.
- a fluorine-based resin such as quartz, ceramics, or polytetrafluoroethylene resin, a polyimide resin, or the like can be used.
- Microwaves have longer wavelengths in vacuum.
- the microwave slow wave material 72 has a function of adjusting the plasma by shortening the wavelength of the microwave.
- the phase of the microwave changes depending on the thickness of the microwave slow wave material 72. Therefore, by adjusting the phase of the microwave according to the thickness of the microwave slow wave material 72, the planar antenna 71 can be adjusted so as to be at the antinode position of the standing wave. As a result, the reflected wave in the flat antenna 71 can be suppressed, and the radiant energy of the microwave radiated from the flat antenna 71 can be increased. That is, this makes it possible to efficiently introduce the power of microwaves into the processing container 2.
- the microwave transmission plate 73 is made of a dielectric material.
- the dielectric material for forming the microwave transmission plate 73 for example, quartz, ceramics, or the like is used.
- the microwave transmission plate 73 is shaped so that microwaves can be efficiently radiated in the TE mode.
- the microwave transmission plate 73 has a rectangular parallelepiped shape.
- the shape of the microwave transmission plate 73 is not limited to the rectangular parallelepiped shape, and may be, for example, a cylindrical shape, a pentagonal pillar shape, a hexagonal pillar shape, or an octagonal pillar shape.
- the microwave amplified by the main amplifier 62C passes through the microwave transmission path 68 between the inner peripheral surface of the main body container 66 and the outer peripheral surface of the inner conductor 67, and is a flat antenna 71. To reach. Then, it is transmitted from the slot 71a of the flat antenna 71 through the microwave transmission plate 73 and radiated into the internal space of the processing container 2.
- Tuner 64 constitutes a slug tuner. Specifically, as shown in FIG. 4, the tuner 64 has two slags 74A and 74B arranged on the base end side (upper end side) of the main body container 66 with respect to the antenna portion 65. .. Further, the tuner 64 has an actuator 75 for operating the two slugs 74A and 74B, and a tuner controller 76 for controlling the actuator 75.
- the slags 74A and 74B have a plate-like and annular shape, and are arranged between the inner peripheral surface of the main body container 66 and the outer peripheral surface of the inner conductor 67. Further, the slags 74A and 74B are formed of a dielectric material.
- the dielectric material for forming the slags 74A and 74B for example, high-purity alumina having a relative permittivity of 10 can be used. High-purity alumina has a higher relative permittivity than quartz (relative permittivity 3.88) and Teflon (registered trademark) (relative permittivity 2.03), which are usually used as materials for forming slag, and therefore slag.
- high-purity alumina has a feature that the dielectric loss tangent (tan ⁇ ) is smaller than that of quartz or Teflon (registered trademark), and the microwave loss can be reduced.
- High-purity alumina also has a feature of low strain and a feature of being resistant to heat.
- the high-purity alumina is preferably an alumina sintered body having a purity of 99.9% or more.
- single crystal alumina may be used as high-purity alumina.
- the tuner 64 moves the slags 74A and 74B in the vertical direction by the actuator 75 based on the command from the tuner controller 76. As a result, the tuner 64 adjusts the impedance. For example, the tuner controller 76 adjusts the positions of the slags 74A and 74B so that the impedance of the terminal portion becomes, for example, 50 ⁇ .
- the main amplifier 62C, the tuner 64, and the planar antenna 71 are arranged close to each other.
- the tuner 64 and the planar antenna 71 form a lumped constant circuit and function as a resonator. Impedance mismatch exists in the mounting portion of the flat antenna 71.
- the tuner 64 can be tuned with high accuracy including plasma, and the influence of reflection on the planar antenna 71 can be eliminated. Further, the tuner 64 can eliminate the impedance mismatch up to the planar antenna 71 with high accuracy, and the mismatched portion can be substantially used as the plasma space. As a result, the tuner 64 enables highly accurate plasma control.
- FIG. 7 is a diagram showing an example of the bottom surface of the top wall 11 of the processing container 2 shown in FIG. In the following description, it is assumed that the microwave transmission plate 73 has a cylindrical shape.
- the microwave introduction module 5 includes a plurality of microwave transmission plates 73. As described above, the microwave transmission plate 73 corresponds to the microwave transmission window.
- the plurality of microwave transmission plates 73 are fitted in a plurality of openings of the top wall 11 which is a conductive member of the microwave introduction module 5, and are one virtual one parallel to the mounting surface 21a of the mounting table 21. It is arranged on a plane. Further, the plurality of microwave transmission plates 73 include three microwave transmission plates 73 whose center points are equal to or substantially equal to each other in the virtual plane.
- the position of the microwave transmission plate 73 is determined from the viewpoint of the shape accuracy of the microwave transmission plate 73 and the assembly accuracy of the antenna module 61 (microwave introduction mechanism 63). It means that it may be slightly deviated from the desired position.
- the plurality of microwave transmission plates 73 are composed of seven microwave transmission plates 73 arranged so as to be arranged in a hexagonal close-packed manner. Specifically, the plurality of microwave transmission plates 73 have seven microwave transmission plates 73A to 73G. The six microwave transmission plates 73A to 73F are arranged so that their center points coincide with or substantially coincide with the vertices of the regular hexagon, respectively. One microwave transmission plate 73G is arranged so that its center point coincides with or substantially coincides with the center of a regular hexagon.
- the center point of the microwave transmission plate 73 is the above-mentioned apex from the viewpoint of the shape accuracy of the microwave transmission plate 73 and the assembly accuracy of the antenna module 61 (microwave introduction mechanism 63). Or it means that it may be slightly off center.
- the microwave transmission plate 73G is arranged at the central portion of the top wall 11.
- the six microwave transmitting plates 73A to 73F are arranged outside the central portion of the top wall 11 so as to surround the microwave transmitting plates 73G. Therefore, the microwave transmission plate 73G corresponds to the central microwave transmission window, and the microwave transmission plates 73A to 73F correspond to the outer microwave transmission window.
- the "central portion of the top wall 11" means the "central portion of the top wall 11 in the planar shape".
- the distances between the center points of any three microwave transmitting plates 73 adjacent to each other are equal to or substantially equal to each other.
- the gas nozzle 163 and the gas nozzle 183 are arranged in the circumferential direction between the outer microwave transmission plates 73A to 73G and the central microwave transmission plate 73G.
- the antenna portion 65 of the microwave introduction mechanism 63 has one in the center (see the microwave transmission plate 73G) and six in the outer peripheral portion (microwave transmission). (See plates 73A to 73F) are arranged. Therefore, the arrangement of the antenna portion 65 of the microwave introduction mechanism 63 has symmetry six times in the circumferential direction.
- FIG. 7 shows a first gas supply unit 16 and a third gas supply unit 18.
- the gas introduction path 161, the gas diffusion space 162, the gas introduction path 181 and the gas diffusion space 182 formed in the top wall 11 are shown by hidden lines (broken lines).
- a total of 12 gas nozzles 163 are arranged at equal intervals on the back surface of the top wall 11 in the circumferential direction.
- the gas diffusion space 162 is divided into three in the circumferential direction.
- four gas nozzles 163 are provided for one arc-shaped gas diffusion space 162. Therefore, the arrangement of the flow path structure of the first gas supply unit 16 has symmetry three times in the circumferential direction.
- a mass flow controller (not shown) is provided for each divided gas diffusion space 162, and each gas introduction path 161 from the gas supply source 31 is provided. It may be configured so that the flow rate of the gas supplied to the gas can be adjusted individually.
- the gas supply from the gas supply source 31 to each gas introduction path 161 is configured to branch the gas whose flow rate is controlled by one mass flow controller (not shown) and supply the gas to each gas introduction path 161. May be good.
- a total of 12 gas nozzles 183 are arranged at equal intervals in the circumferential direction.
- the gas diffusion space 182 is not divided in the circumferential direction, but is formed in an annular shape.
- 12 gas nozzles 183 are provided for the annular gas diffusion space 182.
- Three gas introduction paths 181 are provided for the gas diffusion space 182.
- a mass flow controller (not shown) is provided for each gas introduction path 181 for gas supply from the gas supply source 31 to each gas introduction path 181, and the gas is supplied from the gas supply source 31 to each gas introduction path 181. It may be configured so that the gas flow rate to be used can be adjusted individually.
- the gas supply from the gas supply source 31 to each gas introduction path 181 is configured to branch the gas whose flow rate is controlled by one mass flow controller (not shown) and supply the gas to each gas introduction path 181. May be good.
- FIG. 8 is a diagram showing an example of a horizontal cross section of the side wall 12 of the processing container 2 shown in FIG.
- a total of 30 gas nozzles 173 are arranged at equal intervals on the inner wall surface of the side wall 12 in the circumferential direction.
- the gas diffusion space 172 is divided into six in the circumferential direction. Further, five gas nozzles 173 are provided for one arc-shaped gas diffusion space 172. Therefore, the arrangement of the flow path structure of the second gas supply unit 17 has symmetry 6 times in the circumferential direction.
- a mass flow controller (not shown) is provided for each divided gas diffusion space 172, and each gas introduction path 171 from the gas supply source 31 is provided. It may be configured so that the flow rate of the gas supplied to the gas can be adjusted individually. Further, the gas supply from the gas supply source 31 to each gas introduction path 171 is configured to branch the gas whose flow rate is controlled by one mass flow controller (not shown) and supply the gas to each gas introduction path 171. May be good.
- FIG. 9 is an example of a graph showing changes in the film thickness of the SiN film with respect to the circumferential direction in the inner peripheral portion, the intermediate portion, and the outer peripheral portion of the substrate W in the reference example.
- the conductances of the plurality of gas nozzles arranged in the circumferential direction are equal, and a SiN film is formed on the substrate W by using the plasma processing apparatus 1.
- the horizontal axis represents the circumferential angle of the substrate W
- the vertical axis represents the film thickness.
- the film thickness fluctuates 6 times periodically on the outer peripheral portion of the substrate W. This is because the arrangement of the antenna portion 65 of the microwave introduction mechanism 63 has symmetry six times in the circumferential direction, so that the plasma generated by the microwave introduction module 5 is also non-uniform with respect to the circumferential direction. The thickness of the SiN film formed on the substrate W is also non-uniform.
- the plasma processing apparatus 1 has a flow rate adjusting mechanism for adjusting the flow rate of the gas supplied into the processing container 2 for each gas nozzle 163, 173, 183.
- FIG. 10 is a schematic diagram showing an example of adjusting the gas flow rate by the flow rate adjusting mechanism. Regions 901 where the film thickness is thickened and regions 902 where the film thickness is thin are alternately formed on the substrate W in the circumferential direction.
- the flow rate of the gas toward the thick region 901 is reduced (indicated by the black arrow in FIG. 10) to the thin region 902. Increase the flow rate of the gas going toward it (indicated by the white arrow in FIG. 10). That is, in the example of FIG.
- a gas nozzle having a small conductance is used for the gas nozzles 173A and 173E, and a gas nozzle having a large conductance is used for the gas nozzle 173C. That is, the gas flow rate supplied from the gas nozzles 173A to 173E into the processing container 2 may be non-uniform.
- the film thickness variation is adjusted by adjusting the gas flow rate supplied from the gas nozzles 173A to 173E into the processing container 2 with respect to the film thickness variation caused by the arrangement of the antenna portion 65 of the microwave introduction mechanism 63. Suppress.
- the uniformity of the film thickness of the SiN film formed on the substrate W in the circumferential direction can be improved. That is, by adjusting the combination of the conductances of the plurality of gas nozzles 173 arranged in the circumferential direction in the second gas supply unit 17, the uniformity of the film thickness of the SiN film formed on the substrate W in the circumferential direction is improved. Can be done.
- a region 902 having a thin film thickness is formed below the outer microwave transmitting plates 73A to 73F, and below between the microwave transmitting plates 73A to 73F adjacent to each other in the circumferential direction.
- a region 901 where the film thickness becomes thick is formed.
- the gas nozzles 173 are provided at equal intervals along the side wall 12 of the substantially cylindrical processing container 2, and the gas ejection direction of each gas nozzle 173 is toward the center of the substrate W.
- the direction. When the mounting table 21 is viewed from above the processing container 2 (projected on a plane parallel to the substrate W), the amount of gas ejected from the gas nozzle 173 in which any of the outer microwave transmitting plates 73A to 73F is present in the gas ejection direction. However, the amount of gas ejected from the gas nozzle 173 in which the outer microwave transmitting plates 73A to 73F do not exist in the gas ejection direction is increased.
- the flow rate of the gas supplied to the lower side (the region 902 where the film thickness becomes thin) of the outer microwave transmission plates 73A to 73F is set to the lower side (between the outer microwave transmission plates 73A to 73F). It can be made larger than the flow rate of the gas supplied to the region 901) where the film thickness becomes thick. As a result, the uniformity of the film thickness of the SiN film formed on the substrate W in the circumferential direction can be improved.
- FIG. 11 is an example of a graph showing the film thickness of the SiN film formed on the outer peripheral portion of the substrate W due to the difference in the gas supply position.
- the horizontal axis indicates the circumferential angle, and the vertical axis indicates the standardized film thickness.
- Graph 801 shows a case where gas is supplied from the second gas supply unit 17 to form a film.
- Graph 802 shows a case where gas is supplied from the first gas supply unit 16 to form a film.
- Graph 803 shows a case where gas is supplied from both the first gas supply unit 16 and the second gas supply unit 17 to form a film.
- FIG. 12 is a graph showing the film thickness of the SiN film formed on the substrate W due to the difference in the gas supply position.
- the horizontal axis represents the distance from the center of the substrate W (distance in the radial direction), and the vertical axis represents the film thickness.
- Graph 804 shows a case where gas is supplied from the second gas supply unit 17 to form a film.
- Graph 805 shows a case where gas is supplied from the first gas supply unit 16 to form a film.
- Graph 806 shows a case where gas is supplied from both the first gas supply unit 16 and the second gas supply unit 17 to form a film.
- the graph 803 showed an improvement of 60 to 70% as compared with the graphs 801 and 802. Further, as shown in FIG. 12, by supplying gas from the first gas supply unit 16 and the second gas supply unit 17, it is possible to reduce the unevenness of the film thickness in the radial direction.
- the combination of the conductances of the gas nozzles 173 arranged in the circumferential direction in the second gas supply unit 17 and the conductance combination of the gas nozzles 163 arranged in the circumferential direction in the first gas supply unit 16 are adjusted. By doing so, the uniformity of the film thickness of the SiN film formed on the substrate W in the circumferential direction and the radial direction can be improved.
- FIG. 13 is a schematic view showing an example of another flow rate adjusting mechanism.
- a flow rate adjusting mechanism 165 such as a variable orifice may be provided between the gas diffusion space 162 and the gas nozzle 163.
- a flow rate adjusting mechanism such as a variable orifice may be provided between the gas diffusion space 172 and the gas nozzle 173 in the second gas supply unit 17.
- FIG. 14 is a schematic view showing an example of still another flow rate adjusting mechanism.
- a flow rate adjusting mechanism 166 such as a variable orifice may be provided in the gas diffusion space 162.
- the second gas supply unit 17 may be provided with a flow rate adjusting mechanism such as a variable orifice in the gas diffusion space 172.
- FIG. 15 is a flowchart illustrating a gas flow rate adjusting method.
- step S101 the substrate W is subjected to plasma processing using the plasma processing device 1.
- a SiN film is formed on the substrate W based on the process conditions.
- gas type process gas, excitation gas, etc.
- gas flow rate pressure
- temperature substrate temperature, processing
- the wall surface temperature of the container 2 and plasma power (microwave output in each antenna unit 60) are included.
- the information of the flow rate adjusting mechanism in the plasma processing device 1 when the plasma processing is performed includes the nozzle diameter and the nozzle conductance of each gas nozzle 163, 173, 183.
- Design values can be used for the nozzle diameters of the gas nozzles 163, 173, and 183. Further, the conductance of each gas nozzle 163, 173, 183 is measured in advance.
- the flow rate adjusting mechanism is a flow rate adjusting mechanism 165 such as the variable orifice shown in FIG. 13 or 14, the information of the flow rate adjusting mechanism includes the orifice diameter of each variable orifice.
- step S102 the process result of the plasma treatment in step S101 is measured.
- the film thickness and / or the refractive index of the SiN film formed on the substrate W is measured.
- a plurality of measurement points are provided in the circumferential direction and the radial direction of the substrate W.
- a plurality of measurement points may be provided on a plurality of circles having different diameters concentric with the substrate W.
- step S103 the adjustment content of the flow rate adjusting mechanism is determined based on the process conditions of the plasma processing in step S101, the information of the flow rate adjusting mechanism, and the process result in step S102.
- FIG. 16 is a block diagram showing an example of the adjustment content determination device 500.
- the adjustment content determination device 500 is, for example, a computer server or the like.
- the adjustment content determining device 500 includes an input unit 501, an analysis unit 502, and an output unit 503.
- the analysis unit 502 analyzes based on the input information input by the input unit 501 and outputs the output information.
- the output information includes information on the process conditions of plasma processing and the flow rate adjusting mechanism.
- the analysis unit 502 determines the output information so that the film thickness is uniform and / or the refractive index is uniform. Specifically, the analysis unit 502 determines the output information so that the process result (film thickness and / or refractive index) in the circumferential direction of the substrate W becomes uniform.
- the analysis unit 502 may be configured to determine output information based on, for example, a design of experiments.
- the analysis unit 502 may be configured to determine output information based on, for example, machine learning. That is, the analysis unit 502 generates a trained model by machine learning in advance using the plasma processing process conditions and the information of the flow rate adjustment mechanism as input data and the plasma processing process result as output data. The analysis unit 502 determines the output information based on the input information and the trained model.
- the analysis unit 502 may directly derive the output information based on the input information. Further, the analysis unit 502 may derive the intermediate output information based on the input information and calculate the output information based on the intermediate output information.
- the intermediate output information may be the sensitivity coefficient (contribution degree) of the gas nozzle (nozzle diameter, conductance) at the measurement point of the substrate W.
- the sensitivity coefficients as A ⁇ B are determined.
- the flow rate adjusting mechanism is a flow rate adjusting mechanism 165 such as the variable orifice shown in FIG. 13 or 14
- the intermediate output information may be the sensitivity coefficient (contribution) of each flow rate adjusting mechanism 165 (variable orifice). ..
- the output unit 503 outputs output information.
- the output information of the adjustment content determination device 500 is used in step S104. Further, the output unit 503 may output intermediate output information.
- the intermediate output information of the adjustment content determination device 500 can be used for physical consideration, failure determination, and the like.
- step S104 the gas flow rate is adjusted by adjusting the flow rate adjusting mechanism based on the result of step S103.
- each gas nozzle 163, 173, 183 is replaced so that the nozzle diameter and nozzle conductance of each gas nozzle 163, 173, 183 obtained in step S103 are obtained.
- the flow rate adjusting mechanism is a flow rate adjusting mechanism 165 such as the variable orifice shown in FIG. 13 or 14, the orifice diameter of each flow rate adjusting mechanism 165 is adjusted.
- the plasma processing apparatus 1 is an example in all respects and is not restrictive.
- the above embodiments can be modified and improved in various forms without departing from the scope of the appended claims and their gist.
- the matters described in the plurality of embodiments may have other configurations within a consistent range, and may be combined within a consistent range.
- the first gas supply unit 16 has been described as being formed by dividing the gas diffusion space 162 in the circumferential direction, but the present invention is not limited to this, and the gas diffusion space 162 may be formed in an annular shape.
- the second gas supply unit 17 has been described as being formed by dividing the gas diffusion space 172 in the circumferential direction, but the present invention is not limited to this, and the gas diffusion space 172 may be formed in an annular shape.
- the third gas supply unit 18 has been described as having the gas diffusion space 182 formed in an annular shape, but the present invention is not limited to this, and the third gas supply unit 18 may be formed by being divided in the circumferential direction.
- Plasma processing device Processing container 21 Mounting stand 3 Gas supply mechanism 4 Exhaust device 5 Microwave introduction module (plasma generator) 8 Control unit 16 Gas supply unit 161 Gas introduction path 162 Gas diffusion space 163 Gas nozzle 164 Gas supply hole 17 Gas supply unit 171 Gas introduction path 172 Gas diffusion space 173 Gas nozzle 174 Gas supply hole 18 Gas supply unit 181 Gas introduction path 182 Gas diffusion Space 183 Gas nozzle 184 Gas supply hole 500 Adjustment content determination device 501 Input unit 502 Analysis unit 503 Output unit
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Abstract
Provided are a plasma treatment apparatus and a gas flow-rate control method, with which in-plane uniformity of a treatment applied to a substrate is improved. This plasma treatment apparatus is provided with: a treatment vessel for accommodating a placement table on which a substrate is to be placed; a gas supply unit which supplies gas to the treatment vessel; and a plasma generation unit which generates a plasma within the treatment vessel. The gas supply unit comprises: a plurality of gas nozzles that are arranged in the circumferential direction; and a flow-rate control mechanism for controlling the flow rate of the gas nozzles.
Description
本開示は、プラズマ処理装置及びガス流量調整方法に関する。
The present disclosure relates to a plasma processing apparatus and a gas flow rate adjusting method.
処理容器内に所望のガスを供給して、処理容器内に設けられた載置台に載置された基板に所望の処理(例えば、成膜処理等)を施す基板処理装置が知られている。
There is known a substrate processing apparatus that supplies a desired gas into a processing container and performs a desired treatment (for example, a film forming process) on a substrate placed on a mounting table provided in the processing container.
特許文献1には、第1のガスをチャンバ内に供給する第1のガスシャワー部と、第2のガスをチャンバ内に供給する第2のガスシャワー部と、を備え、第2のガス導入部は同一円周上に等間隔で配置された複数のノズルを有する、プラズマ処理装置が開示されている。
Patent Document 1 includes a first gas shower unit that supplies a first gas into a chamber and a second gas shower unit that supplies a second gas into the chamber, and introduces a second gas. A plasma processing apparatus is disclosed in which the portions have a plurality of nozzles arranged at equal intervals on the same circumference.
一の側面では、本開示は、基板に施す処理の面内均一性を向上するプラズマ処理装置及びガス流量調整方法を提供する。
On the one hand, the present disclosure provides a plasma processing apparatus and a gas flow rate adjusting method for improving the in-plane uniformity of processing applied to a substrate.
上記課題を解決するために、一の態様によれば、基板を載置する載置台を収容する処理容器と、前記処理容器にガスを供給するガス供給部と、前記処理容器内にプラズマを生成するプラズマ生成部と、を備え、前記ガス供給部は、周方向に配置される複数のガスノズルと、複数の前記ガスノズルの流量を調整する流量調整機構と、を有する、プラズマ処理装置が提供される。
In order to solve the above problems, according to one embodiment, a processing container accommodating a mounting table on which a substrate is placed, a gas supply unit for supplying gas to the processing container, and plasma are generated in the processing container. Provided is a plasma processing apparatus comprising a plasma generating unit for the gas supply, the gas supply unit having a plurality of gas nozzles arranged in the circumferential direction, and a flow rate adjusting mechanism for adjusting the flow rate of the plurality of gas nozzles. ..
一の側面によれば、基板に施す処理の面内均一性を向上するプラズマ処理装置及びガス流量調整方法を提供することができる。
According to one aspect, it is possible to provide a plasma processing apparatus and a gas flow rate adjusting method for improving the in-plane uniformity of the processing applied to the substrate.
以下、図面を参照して本開示を実施するための形態について説明する。各図面において、同一構成部分には同一符号を付し、重複した説明を省略する場合がある。
Hereinafter, a mode for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same components may be designated by the same reference numerals and duplicate description may be omitted.
[プラズマ処理装置]
まず、図1及び図2を参照して、一実施形態に係るプラズマ処理装置1の概略の構成について説明する。図1は、一実施形態に係るプラズマ処理装置1の一例を示す断面模式図である。図2は、図1に示した制御部8の構成の一例を示す説明図である。本実施形態に係るプラズマ処理装置1は、連続する複数の動作を伴って、例えば半導体デバイス製造用の半導体ウエハを一例とする基板Wに対して、成膜処理、拡散処理、エッチング処理、アッシング処理等の所定の処理を施す装置である。以下の説明において、プラズマ処理装置1は、Siを含む原料ガスと、窒化ガスとを用いてプラズマCVDにより基板WにSiN膜を成膜する成膜装置である場合を例に説明する。 [Plasma processing equipment]
First, a schematic configuration of the plasma processing apparatus 1 according to the embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a schematic cross-sectional view showing an example of the plasma processing apparatus 1 according to the embodiment. FIG. 2 is an explanatory diagram showing an example of the configuration of thecontrol unit 8 shown in FIG. The plasma processing apparatus 1 according to the present embodiment involves a plurality of continuous operations, and for example, a film forming process, a diffusion process, an etching process, and an ashing process are performed on a substrate W, for example, a semiconductor wafer for manufacturing a semiconductor device. It is a device that performs predetermined processing such as. In the following description, a case where the plasma processing apparatus 1 is a film forming apparatus for forming a SiN film on the substrate W by plasma CVD using a raw material gas containing Si and a nitride gas will be described as an example.
まず、図1及び図2を参照して、一実施形態に係るプラズマ処理装置1の概略の構成について説明する。図1は、一実施形態に係るプラズマ処理装置1の一例を示す断面模式図である。図2は、図1に示した制御部8の構成の一例を示す説明図である。本実施形態に係るプラズマ処理装置1は、連続する複数の動作を伴って、例えば半導体デバイス製造用の半導体ウエハを一例とする基板Wに対して、成膜処理、拡散処理、エッチング処理、アッシング処理等の所定の処理を施す装置である。以下の説明において、プラズマ処理装置1は、Siを含む原料ガスと、窒化ガスとを用いてプラズマCVDにより基板WにSiN膜を成膜する成膜装置である場合を例に説明する。 [Plasma processing equipment]
First, a schematic configuration of the plasma processing apparatus 1 according to the embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a schematic cross-sectional view showing an example of the plasma processing apparatus 1 according to the embodiment. FIG. 2 is an explanatory diagram showing an example of the configuration of the
プラズマ処理装置1は、処理容器2と載置台21とガス供給機構3と排気装置4とマイクロ波導入モジュール5と制御部8とを有する。処理容器2は、被処理体である基板Wを収容する。載置台21は、処理容器2の内部に配置され、基板Wを載置する載置面21aを有する。ガス供給機構3は、処理容器2内にガスを供給する。排気装置4は、処理容器2内を減圧排気する。マイクロ波導入モジュール5は、処理容器2内にプラズマを生成させるためのマイクロ波を導入する。制御部8は、プラズマ処理装置1の各部を制御する。
The plasma processing device 1 includes a processing container 2, a mounting table 21, a gas supply mechanism 3, an exhaust device 4, a microwave introduction module 5, and a control unit 8. The processing container 2 houses the substrate W, which is the object to be processed. The mounting table 21 is arranged inside the processing container 2 and has a mounting surface 21a on which the substrate W is mounted. The gas supply mechanism 3 supplies gas into the processing container 2. The exhaust device 4 decompresses and exhausts the inside of the processing container 2. The microwave introduction module 5 introduces microwaves for generating plasma into the processing container 2. The control unit 8 controls each unit of the plasma processing device 1.
処理容器2は、例えば略円筒形状を有する。処理容器2は、例えばアルミニウム及びその合金等の金属材料によって形成されている。マイクロ波導入モジュール5は、処理容器2の上部に配置され、処理容器2内に電磁波(本実施形態ではマイクロ波)を導入し、プラズマを生成するプラズマ生成部として機能する。
The processing container 2 has, for example, a substantially cylindrical shape. The processing container 2 is made of a metal material such as aluminum and an alloy thereof. The microwave introduction module 5 is arranged above the processing container 2 and functions as a plasma generation unit that introduces an electromagnetic wave (microwave in this embodiment) into the processing container 2 and generates plasma.
処理容器2は、板状の天壁11、底壁13、及び天壁11と底壁13とを連結する側壁12とを有している。天壁11は、複数の開口部を有している。側壁12は、処理容器2に隣接する図示しない搬送室との間で基板Wの搬入出を行うための搬入出口12aを有している。処理容器2と図示しない搬送室との間には、ゲートバルブGが配置されている。ゲートバルブGは、搬入出口12aを開閉する機能を有している。ゲートバルブGは、閉状態で処理容器2を気密にシールすると共に、開状態で処理容器2と図示しない搬送室との間で基板Wの移送を可能にする。
The processing container 2 has a plate-shaped top wall 11, a bottom wall 13, and a side wall 12 that connects the top wall 11 and the bottom wall 13. The top wall 11 has a plurality of openings. The side wall 12 has a carry-in / out port 12a for carrying in / out the substrate W to / from a transport chamber (not shown) adjacent to the processing container 2. A gate valve G is arranged between the processing container 2 and the transport chamber (not shown). The gate valve G has a function of opening and closing the carry-in outlet 12a. The gate valve G airtightly seals the processing container 2 in the closed state, and enables the substrate W to be transferred between the processing container 2 and the transport chamber (not shown) in the open state.
底壁13は、複数(図1では2つ)の排気口13aを有している。プラズマ処理装置1は、更に、排気口13aと排気装置4とを接続する排気管14を有する。排気装置4は、APCバルブと、処理容器2の内部空間を所定の真空度まで高速に減圧することが可能な高速真空ポンプとを有している。このような高速真空ポンプとしては、例えばターボ分子ポンプ等がある。排気装置4の高速真空ポンプを作動させることによって、処理容器2は、その内部空間が所定の真空度、例えば0.133Paまで減圧される。
The bottom wall 13 has a plurality of (two in FIG. 1) exhaust ports 13a. The plasma processing device 1 further has an exhaust pipe 14 that connects the exhaust port 13a and the exhaust device 4. The exhaust device 4 has an APC valve and a high-speed vacuum pump capable of rapidly depressurizing the internal space of the processing container 2 to a predetermined degree of vacuum. Examples of such a high-speed vacuum pump include a turbo molecular pump and the like. By operating the high-speed vacuum pump of the exhaust device 4, the internal space of the processing container 2 is reduced to a predetermined degree of vacuum, for example, 0.133 Pa.
プラズマ処理装置1は、更に、処理容器2内において載置台21を支持する支持部材22と、支持部材22と底壁13との間に設けられた絶縁部材23とを有する。載置台21は、基板Wを水平に載置するためのものである。支持部材22は、底壁13の中央から処理容器2の内部空間に向かって延びる円筒状の形状を有している。載置台21および支持部材22は、例えば表面にアルマイト処理(陽極酸化処理)が施されたアルミニウム等によって形成されている。
The plasma processing device 1 further has a support member 22 that supports the mounting table 21 in the processing container 2, and an insulating member 23 provided between the support member 22 and the bottom wall 13. The mounting table 21 is for mounting the substrate W horizontally. The support member 22 has a cylindrical shape extending from the center of the bottom wall 13 toward the internal space of the processing container 2. The mounting table 21 and the support member 22 are formed of, for example, aluminum or the like whose surfaces have been anodized (anodized).
プラズマ処理装置1は、更に、載置台21に高周波電力を供給する高周波バイアス電源25と、載置台21と高周波バイアス電源25との間に設けられた整合器24とを有する。高周波バイアス電源25は、基板Wにイオンを引き込むために、載置台21に高周波電力を供給する。整合器24は、高周波バイアス電源25の出力インピーダンスと負荷側(載置台21側)のインピーダンスを整合させるための回路を有する。
The plasma processing device 1 further includes a high-frequency bias power supply 25 that supplies high-frequency power to the mounting table 21, and a matching unit 24 provided between the mounting table 21 and the high-frequency bias power supply 25. The high frequency bias power supply 25 supplies high frequency power to the mounting table 21 in order to draw ions into the substrate W. The matching device 24 has a circuit for matching the output impedance of the high-frequency bias power supply 25 with the impedance on the load side (mounting table 21 side).
プラズマ処理装置1は、更に、載置台21を加熱または冷却する、図示しない温度制御機構を有してもよい。温度制御機構は、例えば、基板Wの温度を、25℃(室温)~900℃の範囲内で制御する。
The plasma processing device 1 may further have a temperature control mechanism (not shown) for heating or cooling the mounting table 21. The temperature control mechanism controls, for example, the temperature of the substrate W in the range of 25 ° C. (room temperature) to 900 ° C.
プラズマ処理装置1は、処理容器2内にガスを供給するガス供給部16~18を備える。
The plasma processing device 1 includes gas supply units 16 to 18 for supplying gas into the processing container 2.
第1のガス供給部16は、ガス導入路161と、ガス拡散空間162と、ガスノズル163と、を有する。ガス導入路161は、ガス拡散空間162と連通し、ガス供給機構3から供給されたガスをガス拡散空間162に導入する。ガス拡散空間162は、天壁11内に環状に形成される。なお、ガス拡散空間162は、周方向に分割されていてもよい(後述する図7参照)。ガス導入路161から導入されたガスは、ガス拡散空間162内で拡散する。ガス拡散空間162には、複数のガスノズル163が接続されている。ガスノズル163は、周方向に配置され(後述する図7参照)、処理容器2を構成する天壁11の下面から垂直方向に突出している。ガスノズル163は、その先端に形成されたガス供給孔164から処理容器2内にガスを垂直方向に供給(噴出)する。
The first gas supply unit 16 has a gas introduction path 161, a gas diffusion space 162, and a gas nozzle 163. The gas introduction path 161 communicates with the gas diffusion space 162 and introduces the gas supplied from the gas supply mechanism 3 into the gas diffusion space 162. The gas diffusion space 162 is formed in a ring shape in the top wall 11. The gas diffusion space 162 may be divided in the circumferential direction (see FIG. 7 described later). The gas introduced from the gas introduction path 161 diffuses in the gas diffusion space 162. A plurality of gas nozzles 163 are connected to the gas diffusion space 162. The gas nozzle 163 is arranged in the circumferential direction (see FIG. 7 described later), and projects vertically from the lower surface of the top wall 11 constituting the processing container 2. The gas nozzle 163 vertically supplies (spouts) gas into the processing container 2 from the gas supply hole 164 formed at the tip thereof.
第2のガス供給部17は、ガス導入路171と、ガス拡散空間172と、ガスノズル173と、を有する。ガス導入路171は、ガス拡散空間172と連通し、ガス供給機構3から供給されたガスをガス拡散空間172に導入する。ガス拡散空間172は、側壁12内に環状に形成される。なお、ガス拡散空間172は、周方向に分割されていてもよい(後述する図8参照)。ガス導入路171から導入されたガスは、ガス拡散空間172内で拡散する。ガス拡散空間172には、複数のガスノズル173が接続されている。ガスノズル173は、周方向に配置され(後述する図8参照)、処理容器2を構成する側壁12の内壁面から水平方向に突出している。ガスノズル173は、その先端に形成されたガス供給孔174から処理容器2内にガスを供給する。ここで、第2のガス供給部17のガス供給孔174は、第1のガス供給部16のガス供給孔164よりも、処理容器2の径方向外側に設けられている。これにより、ガスノズル173は、ガスノズル163よりも径方向外側から処理容器2内にガスを水平方向に供給(噴出)する。供給する。
The second gas supply unit 17 has a gas introduction path 171, a gas diffusion space 172, and a gas nozzle 173. The gas introduction path 171 communicates with the gas diffusion space 172 and introduces the gas supplied from the gas supply mechanism 3 into the gas diffusion space 172. The gas diffusion space 172 is formed in an annular shape in the side wall 12. The gas diffusion space 172 may be divided in the circumferential direction (see FIG. 8 to be described later). The gas introduced from the gas introduction path 171 diffuses in the gas diffusion space 172. A plurality of gas nozzles 173 are connected to the gas diffusion space 172. The gas nozzle 173 is arranged in the circumferential direction (see FIG. 8 described later), and projects horizontally from the inner wall surface of the side wall 12 constituting the processing container 2. The gas nozzle 173 supplies gas into the processing container 2 from the gas supply hole 174 formed at the tip thereof. Here, the gas supply hole 174 of the second gas supply unit 17 is provided outside the gas supply hole 164 of the first gas supply unit 16 in the radial direction of the processing container 2. As a result, the gas nozzle 173 horizontally supplies (spouts) gas into the processing container 2 from the radial outside of the gas nozzle 163. Supply.
第3のガス供給部18は、ガス導入路181と、ガス拡散空間182と、ガスノズル183と、を有する。ガス導入路181は、ガス拡散空間182と連通し、ガス供給機構3から供給されたガスをガス拡散空間182に導入する。ガス拡散空間182は、天壁11内に環状に形成される(後述する図7参照)。なお、ガス拡散空間182は、周方向に分割されていてもよい。ガス導入路181から導入されたガスは、ガス拡散空間182内で拡散する。ガス拡散空間182には、複数のガスノズル183が接続されている。ガスノズル183は、周方向に配置され(後述する図7参照)、処理容器2を構成する天壁11の下面から垂直方向に突出している。ガスノズル183は、その先端に形成されたガス供給孔184から処理容器2内にガスを供給する。ここで、第3のガス供給部18のガス供給孔184は、第1のガス供給部16のガス供給孔164及び第2のガス供給部17のガス供給孔174よりも、高い位置に形成されている。これにより、ガスノズル183は、ガスノズル163よりも高い位置から処理容器2内にガスを垂直方向に供給(噴出)する。
The third gas supply unit 18 has a gas introduction path 181, a gas diffusion space 182, and a gas nozzle 183. The gas introduction path 181 communicates with the gas diffusion space 182 and introduces the gas supplied from the gas supply mechanism 3 into the gas diffusion space 182. The gas diffusion space 182 is formed in a ring shape in the top wall 11 (see FIG. 7 described later). The gas diffusion space 182 may be divided in the circumferential direction. The gas introduced from the gas introduction path 181 diffuses in the gas diffusion space 182. A plurality of gas nozzles 183 are connected to the gas diffusion space 182. The gas nozzle 183 is arranged in the circumferential direction (see FIG. 7 described later), and projects vertically from the lower surface of the top wall 11 constituting the processing container 2. The gas nozzle 183 supplies gas into the processing container 2 from the gas supply hole 184 formed at the tip thereof. Here, the gas supply hole 184 of the third gas supply unit 18 is formed at a position higher than the gas supply hole 164 of the first gas supply unit 16 and the gas supply hole 174 of the second gas supply unit 17. ing. As a result, the gas nozzle 183 vertically supplies (spouts) gas into the processing container 2 from a position higher than the gas nozzle 163.
なお、ガスノズル163,183がガスを噴出する垂直方向とは、垂直よりも少し内向きや外向きというような広義の垂直方向も含まれる。また、ガスノズル173がガスを噴出する水平方向とは、水平よりも少し上向きや下向きというような広義の水平方向も含まれる。
The vertical direction in which the gas nozzles 163 and 183 eject gas includes a broad vertical direction such as inward or outward slightly than vertical. Further, the horizontal direction in which the gas nozzle 173 ejects gas includes a broad horizontal direction such as a little upward or downward with respect to the horizontal.
また、ガス供給部16~18は、各ガスノズル163,173,183ごとに、処理容器2内に供給するガス流量を調整する流量調整機構を有している。ここでは、流量調整機構として、各ガスノズル163,173,183が交換可能に構成されている。これにより、ノズル径、ノズルコンダクタンスの異なるガスノズルと交換することにより、各ガスノズル163,173,183から処理容器2内に供給されるガスの流量を個別に調整することができる。
Further, the gas supply units 16 to 18 have a flow rate adjusting mechanism for adjusting the flow rate of the gas supplied into the processing container 2 for each gas nozzle 163, 173, 183. Here, as the flow rate adjusting mechanism, each gas nozzle 163, 173, 183 is configured to be replaceable. As a result, the flow rate of the gas supplied from each gas nozzle 163, 173, 183 into the processing container 2 can be individually adjusted by replacing the gas nozzle with a gas nozzle having a different nozzle diameter and nozzle conductance.
ガス供給源31は、例えば、プラズマ生成用の希ガスや、酸化処理、窒化処理、成膜処理、エッチング処理およびアッシング処理に使用されるガス等のガス供給源として用いられる。例えば、分解し難いガスは第3のガス供給部18のガスノズル183から処理容器2内に供給し、分解し易いガスは第1のガス供給部16のガスノズル163及び第2のガス供給部17のガスノズル173から処理容器2内に供給する。例えばSiN膜を成膜する際に使用するN2ガスとシランガスのうち分解し難いN2ガスはガスノズル183から導入し、分解し易いシランガスはガスノズル163及びガスノズル173から導入する。これにより、分解し易いシランガスを解離しすぎないことで良質のSiN膜を成膜できる。
The gas supply source 31 is used as a gas supply source for, for example, a rare gas for plasma generation, a gas used for an oxidation treatment, a nitriding treatment, a film forming treatment, an etching treatment, and an ashing treatment. For example, the gas that is difficult to decompose is supplied from the gas nozzle 183 of the third gas supply unit 18 into the processing container 2, and the gas that is easily decomposed is supplied from the gas nozzle 163 and the second gas supply unit 17 of the first gas supply unit 16. It is supplied into the processing container 2 from the gas nozzle 173. For example, of the N 2 gas and the silane gas used for forming the SiN film, the N 2 gas that is difficult to decompose is introduced from the gas nozzle 183, and the silane gas that is easily decomposed is introduced from the gas nozzle 163 and the gas nozzle 173. As a result, a high-quality SiN film can be formed by not dissociating too much silane gas, which is easily decomposed.
ガス供給機構3は、ガス供給源31を含むガス供給装置3aと、ガス供給源31と第1のガス供給部16とを接続する配管32aと、ガス供給源31と第2のガス供給部17とを接続する配管32bと、ガス供給源31と第3のガス供給部18とを接続する配管32cと、を有している。なお、図1では、1つのガス供給源31を図示しているが、ガス供給装置3aは、使用されるガスの種類に応じて複数のガス供給源を含んでいてもよい。
The gas supply mechanism 3 includes a gas supply device 3a including a gas supply source 31, a pipe 32a connecting the gas supply source 31 and the first gas supply unit 16, and the gas supply source 31 and the second gas supply unit 17. It has a pipe 32b for connecting the gas supply source 31 and a pipe 32c for connecting the gas supply source 31 and the third gas supply unit 18. Although one gas supply source 31 is shown in FIG. 1, the gas supply device 3a may include a plurality of gas supply sources depending on the type of gas used.
ガス供給装置3aは、更に、配管32a~32cの途中に設けられた図示しないマスフローコントローラおよび開閉バルブを含んでいる。処理容器2内に供給されるガスの種類や、これらのガスの流量等は、マスフローコントローラおよび開閉バルブによって制御される。
The gas supply device 3a further includes a mass flow controller (not shown) and an on / off valve provided in the middle of the pipes 32a to 32c. The type of gas supplied into the processing container 2, the flow rate of these gases, and the like are controlled by the mass flow controller and the on / off valve.
プラズマ処理装置1の各構成部は、それぞれ制御部8に接続されて、制御部8によって制御される。制御部8は、典型的にはコンピュータである。図2に示した例では、制御部8は、CPUを備えたプロセスコントローラ81、プロセスコントローラ81に接続されたユーザーインターフェース82及び記憶部83を有する。
Each component of the plasma processing device 1 is connected to the control unit 8 and controlled by the control unit 8. The control unit 8 is typically a computer. In the example shown in FIG. 2, the control unit 8 has a process controller 81 including a CPU, a user interface 82 connected to the process controller 81, and a storage unit 83.
プロセスコントローラ81は、プラズマ処理装置1において、例えば温度、圧力、ガス流量、バイアス印加用の高周波電力、マイクロ波出力等のプロセス条件に関係する各構成部を統括して制御する制御手段である。各構成部は、例えば、高周波バイアス電源25、ガス供給装置3a、排気装置4、マイクロ波導入モジュール5等が挙げられる。
The process controller 81 is a control means for controlling each component related to process conditions such as temperature, pressure, gas flow rate, high frequency power for applying bias, and microwave output in the plasma processing device 1. Examples of each component include a high-frequency bias power supply 25, a gas supply device 3a, an exhaust device 4, a microwave introduction module 5, and the like.
ユーザーインターフェース82は、工程管理者がプラズマ処理装置1を管理するためにコマンドの入力操作等を行うキーボードやタッチパネル、プラズマ処理装置1の稼働状況を可視化して表示するディスプレイ等を有している。
The user interface 82 has a keyboard and a touch panel for the process manager to input commands and the like for managing the plasma processing device 1, a display for visualizing and displaying the operating status of the plasma processing device 1.
記憶部83には、プラズマ処理装置1で実行される各種処理をプロセスコントローラ81の制御によって実現するための制御プログラムや、処理条件データ等が記録されたレシピ等が保存されている。プロセスコントローラ81は、ユーザーインターフェース82からの指示等、必要に応じて任意の制御プログラムやレシピを記憶部83から呼び出して実行する。これにより、プロセスコントローラ81による制御下で、プラズマ処理装置1の処理容器2内において所望の処理が行われる。
The storage unit 83 stores a control program for realizing various processes executed by the plasma processing device 1 under the control of the process controller 81, a recipe in which processing condition data and the like are recorded, and the like. The process controller 81 calls and executes an arbitrary control program or recipe from the storage unit 83 as necessary, such as an instruction from the user interface 82. As a result, the desired processing is performed in the processing container 2 of the plasma processing apparatus 1 under the control of the process controller 81.
上記の制御プログラムおよびレシピは、例えば、フラッシュメモリ、DVD、ブルーレイディスク等のコンピュータ読み取り可能な記憶媒体に格納された状態のものを利用することができる。また、上記のレシピは、他の装置から、例えば専用回線を介して随時伝送させてオンラインで利用することも可能である。
As the above control program and recipe, for example, those stored in a computer-readable storage medium such as a flash memory, a DVD, or a Blu-ray disc can be used. Further, the above recipe can be used online by being transmitted from another device at any time via, for example, a dedicated line.
次に、図1~図6を参照して、マイクロ波導入モジュール5の構成について説明する。図3は、図1に示したマイクロ波導入モジュールの構成を示す説明図である。図4は、図3に示したマイクロ波導入機構63を示す断面図である。図5は、図4に示したマイクロ波導入機構63のアンテナ部を示す斜視図である。図6は、図4に示したマイクロ波導入機構63の平面アンテナを示す平面図である。
Next, the configuration of the microwave introduction module 5 will be described with reference to FIGS. 1 to 6. FIG. 3 is an explanatory diagram showing the configuration of the microwave introduction module shown in FIG. FIG. 4 is a cross-sectional view showing the microwave introduction mechanism 63 shown in FIG. FIG. 5 is a perspective view showing an antenna portion of the microwave introduction mechanism 63 shown in FIG. FIG. 6 is a plan view showing a plane antenna of the microwave introduction mechanism 63 shown in FIG.
マイクロ波導入モジュール5は、処理容器2の上部に設けられ、処理容器2内に電磁波(マイクロ波)を導入する。図1に示すように、マイクロ波導入モジュール5は、導電性部材である天壁11とマイクロ波出力部50とアンテナユニット60とを有する。天壁11は、処理容器2の上部に配置され、複数の開口部を有する。マイクロ波出力部50は、マイクロ波を生成すると共に、マイクロ波を複数の経路に分配して出力する。アンテナユニット60は、マイクロ波出力部50から出力されたマイクロ波を処理容器2に導入する。本実施形態では、処理容器2の天壁11は、マイクロ波導入モジュール5の導電性部材を兼ねている。
The microwave introduction module 5 is provided in the upper part of the processing container 2 and introduces an electromagnetic wave (microwave) into the processing container 2. As shown in FIG. 1, the microwave introduction module 5 has a top wall 11 which is a conductive member, a microwave output unit 50, and an antenna unit 60. The top wall 11 is arranged on the upper part of the processing container 2 and has a plurality of openings. The microwave output unit 50 generates microwaves and distributes the microwaves to a plurality of paths to output the microwaves. The antenna unit 60 introduces the microwave output from the microwave output unit 50 into the processing container 2. In the present embodiment, the top wall 11 of the processing container 2 also serves as a conductive member of the microwave introduction module 5.
図3に示すようにマイクロ波出力部50は、電源部51と、マイクロ波発振器52と、マイクロ波発振器52によって発振されたマイクロ波を増幅するアンプ53と、アンプ53によって増幅されたマイクロ波を複数の経路に分配する分配器54とを有している。マイクロ波発振器52は、所定の周波数(例えば、2.45GHz)でマイクロ波を発振させる。なお、マイクロ波の周波数は、2.45GHzに限らず、8.35GHz、5.8GHz、1.98GHz等であってもよい。また、このようなマイクロ波出力部50は、マイクロ波の周波数を例えば860MHz等、800MHzから1GHzの範囲内とする場合にも適用することが可能である。分配器54は、入力側と出力側のインピーダンスを整合させながらマイクロ波を分配する。
As shown in FIG. 3, the microwave output unit 50 includes a power supply unit 51, a microwave oscillator 52, an amplifier 53 that amplifies the microwave oscillated by the microwave oscillator 52, and a microwave amplified by the amplifier 53. It has a distributor 54 that distributes to a plurality of paths. The microwave oscillator 52 oscillates microwaves at a predetermined frequency (for example, 2.45 GHz). The frequency of the microwave is not limited to 2.45 GHz and may be 8.35 GHz, 5.8 GHz, 1.98 GHz or the like. Further, such a microwave output unit 50 can also be applied when the microwave frequency is in the range of 800 MHz to 1 GHz, for example, 860 MHz. The distributor 54 distributes microwaves while matching the impedances on the input side and the output side.
アンテナユニット60は、複数のアンテナモジュール61を含んでいる。複数のアンテナモジュール61は、それぞれ、分配器54によって分配されたマイクロ波を処理容器2内に導入する。本実施形態では、複数のアンテナモジュール61の構成は全て同一である。各アンテナモジュール61は、分配されたマイクロ波を主に増幅して出力するアンプ部62と、アンプ部62から出力されたマイクロ波を処理容器2内に導入するマイクロ波導入機構63とを有している。
The antenna unit 60 includes a plurality of antenna modules 61. Each of the plurality of antenna modules 61 introduces the microwave distributed by the distributor 54 into the processing container 2. In this embodiment, the configurations of the plurality of antenna modules 61 are all the same. Each antenna module 61 has an amplifier unit 62 that mainly amplifies and outputs the distributed microwaves, and a microwave introduction mechanism 63 that introduces the microwaves output from the amplifier unit 62 into the processing container 2. ing.
アンプ部62は、位相器62Aと可変ゲインアンプ62Bとメインアンプ62Cとアイソレータ62Dとを有する。位相器62Aは、マイクロ波の位相を変化させる。可変ゲインアンプ62Bは、メインアンプ62Cに入力されるマイクロ波の電力レベルを調整する。メインアンプ62Cは、ソリッドステートアンプとして構成される。アイソレータ62Dは、マイクロ波導入機構63のアンテナ部で反射されてメインアンプ62Cに向かう反射マイクロ波を分離する。
The amplifier unit 62 includes a phase device 62A, a variable gain amplifier 62B, a main amplifier 62C, and an isolator 62D. The phase device 62A changes the phase of the microwave. The variable gain amplifier 62B adjusts the power level of the microwave input to the main amplifier 62C. The main amplifier 62C is configured as a solid state amplifier. The isolator 62D separates the reflected microwaves reflected by the antenna portion of the microwave introduction mechanism 63 and directed toward the main amplifier 62C.
位相器62Aは、マイクロ波の位相を変化させて、マイクロ波の放射特性を変化させる。位相器62Aは、例えば、アンテナモジュール61毎にマイクロ波の位相を調整することによって、マイクロ波の指向性を制御してプラズマの分布を変化させることに用いられる。なお、このような放射特性の調整を行わない場合には、位相器62Aを設けなくてもよい。
The phase device 62A changes the phase of the microwave to change the radiation characteristics of the microwave. The phase device 62A is used to control the directivity of microwaves and change the distribution of plasma by, for example, adjusting the phase of microwaves for each antenna module 61. If such adjustment of radiation characteristics is not performed, the phase device 62A may not be provided.
可変ゲインアンプ62Bは、個々のアンテナモジュール61のばらつきの調整や、プラズマ強度の調整のために用いられる。例えば、可変ゲインアンプ62Bをアンテナモジュール61毎に変化させることによって、処理容器2内全体のプラズマの分布を調整することができる。
The variable gain amplifier 62B is used for adjusting the variation of the individual antenna modules 61 and adjusting the plasma intensity. For example, by changing the variable gain amplifier 62B for each antenna module 61, the distribution of plasma in the entire processing container 2 can be adjusted.
メインアンプ62Cは、例えば、図示しない入力整合回路、半導体増幅素子、出力整合回路および高Q共振回路を含んでいる。半導体増幅素子としては、例えば、E級動作が可能なGaAsHEMT、GaNHEMT、LD(Laterally Diffused)-MOSが用いられる。
The main amplifier 62C includes, for example, an input matching circuit (not shown), a semiconductor amplification element, an output matching circuit, and a high Q resonance circuit (not shown). As the semiconductor amplification element, for example, GaAsHEMT, GaNHEMT, and LD (Laterally Diffused) -MOS capable of class E operation are used.
アイソレータ62Dは、サーキュレータとダミーロード(同軸終端器)とを有している。サーキュレータは、マイクロ波導入機構63のアンテナ部で反射された反射マイクロ波をダミーロードへ導くものである。ダミーロードは、サーキュレータによって導かれた反射マイクロ波を熱に変換するものである。なお、前述のように、本実施形態では、複数のアンテナモジュール61が設けられており、複数のアンテナモジュール61の各々のマイクロ波導入機構63によって処理容器2内に導入された複数のマイクロ波は、処理容器2内において合成される。そのため、個々のアイソレータ62Dは小型のものでもよく、アイソレータ62Dをメインアンプ62Cに隣接して設けることができる。
The isolator 62D has a circulator and a dummy load (coaxial terminator). The circulator guides the reflected microwaves reflected by the antenna portion of the microwave introduction mechanism 63 to the dummy load. The dummy load converts the reflected microwaves guided by the circulator into heat. As described above, in the present embodiment, a plurality of antenna modules 61 are provided, and the plurality of microwaves introduced into the processing container 2 by the microwave introduction mechanism 63 of each of the plurality of antenna modules 61 are provided. , Synthesized in the processing container 2. Therefore, the individual isolators 62D may be small, and the isolators 62D can be provided adjacent to the main amplifier 62C.
図1に示したように、複数のマイクロ波導入機構63は、天壁11に設けられている。図4に示したように、マイクロ波導入機構63は、インピーダンスを整合させるチューナ64と、増幅されたマイクロ波を処理容器2内に放射するアンテナ部65とを有している。更に、マイクロ波導入機構63は、金属材料よりなり、図4における上下方向に延びる円筒状の形状を有する本体容器66と、本体容器66内において本体容器66が延びる方向と同じ方向に延びる内側導体67とを有している。本体容器66および内側導体67は、同軸管を構成している。本体容器66は、この同軸管の外側導体を構成している。内側導体67は、棒状または筒状の形状を有している。本体容器66の内周面と内側導体67の外周面との間の空間は、マイクロ波伝送路68を形成する。
As shown in FIG. 1, a plurality of microwave introduction mechanisms 63 are provided on the top wall 11. As shown in FIG. 4, the microwave introduction mechanism 63 has a tuner 64 for matching impedance and an antenna portion 65 for radiating the amplified microwave into the processing container 2. Further, the microwave introduction mechanism 63 is made of a metal material, and has a main body container 66 having a cylindrical shape extending in the vertical direction in FIG. 4 and an inner conductor extending in the same direction as the main body container 66 extends in the main body container 66. It has 67 and. The main body container 66 and the inner conductor 67 form a coaxial tube. The main body container 66 constitutes the outer conductor of the coaxial tube. The inner conductor 67 has a rod-like or tubular shape. The space between the inner peripheral surface of the main body container 66 and the outer peripheral surface of the inner conductor 67 forms the microwave transmission path 68.
アンテナモジュール61は、更に、図示しない本体容器66の基端側(上端側)に設けられた給電変換部を有している。給電変換部は、同軸ケーブルを介してメインアンプ62Cに接続されている。アイソレータ62Dは、同軸ケーブルの途中に設けられている。アンテナ部65は、本体容器66における給電変換部とは反対側に設けられている。後で説明するように、本体容器66におけるアンテナ部65よりも基端側の部分は、チューナ64によるインピーダンス調整範囲となっている。
The antenna module 61 further has a power supply conversion unit provided on the base end side (upper end side) of the main body container 66 (not shown). The power supply conversion unit is connected to the main amplifier 62C via a coaxial cable. The isolator 62D is provided in the middle of the coaxial cable. The antenna portion 65 is provided on the side of the main body container 66 opposite to the power supply conversion portion. As will be described later, the portion of the main body container 66 on the proximal end side of the antenna portion 65 is within the impedance adjustment range of the tuner 64.
図4及び図5に示したように、アンテナ部65は、内側導体67の下端部に接続された平面アンテナ71と、平面アンテナ71の上面側に配置されたマイクロ波遅波材72と、平面アンテナ71の下面側に配置されたマイクロ波透過板73とを有している。マイクロ波透過板73の下面は、処理容器2の内部空間に露出している。マイクロ波透過板73は、本体容器66を介して、マイクロ波導入モジュール5の導電性部材である天壁11の開口部に嵌合している。マイクロ波透過板73は、本実施形態におけるマイクロ波透過窓に対応する。
As shown in FIGS. 4 and 5, the antenna portion 65 includes a flat antenna 71 connected to the lower end of the inner conductor 67, a microwave slow wave material 72 arranged on the upper surface side of the flat antenna 71, and a flat surface. It has a microwave transmission plate 73 arranged on the lower surface side of the antenna 71. The lower surface of the microwave transmission plate 73 is exposed in the internal space of the processing container 2. The microwave transmission plate 73 is fitted to the opening of the top wall 11 which is a conductive member of the microwave introduction module 5 via the main body container 66. The microwave transmission plate 73 corresponds to the microwave transmission window in the present embodiment.
平面アンテナ71は、円板形状を有している。また、平面アンテナ71は、平面アンテナ71を貫通するように形成されたスロット71aを有している。図5及び図6に示した例では、4つのスロット71aが設けられており、各スロット71aは、4つに均等に分割された円弧形状を有している。なお、スロット71aの数は、4つに限らず、5つ以上であってもよいし、1つ以上、3つ以下であってもよい。
The flat antenna 71 has a disk shape. Further, the planar antenna 71 has a slot 71a formed so as to penetrate the planar antenna 71. In the example shown in FIGS. 5 and 6, four slots 71a are provided, and each slot 71a has an arc shape evenly divided into four. The number of slots 71a is not limited to four, and may be five or more, or one or more and three or less.
マイクロ波遅波材72は、真空よりも大きい誘電率を有する材料によって形成されている。マイクロ波遅波材72を形成する材料としては、例えば、石英、セラミックス、ポリテトラフルオロエチレン樹脂等のフッ素系樹脂、ポリイミド樹脂等を用いることができる。マイクロ波は、真空中ではその波長が長くなる。マイクロ波遅波材72は、マイクロ波の波長を短くしてプラズマを調整する機能を有している。また、マイクロ波の位相は、マイクロ波遅波材72の厚みによって変化する。そのため、マイクロ波遅波材72の厚みによってマイクロ波の位相を調整することにより、平面アンテナ71が定在波の腹の位置になるように調整することができる。これにより、平面アンテナ71における反射波を抑制することができると共に、平面アンテナ71から放射されるマイクロ波の放射エネルギーを大きくすることができる。つまり、これにより、マイクロ波のパワーを効率よく処理容器2内に導入することができる。
The microwave slow wave material 72 is formed of a material having a dielectric constant larger than that of vacuum. As the material for forming the microwave slow wave material 72, for example, a fluorine-based resin such as quartz, ceramics, or polytetrafluoroethylene resin, a polyimide resin, or the like can be used. Microwaves have longer wavelengths in vacuum. The microwave slow wave material 72 has a function of adjusting the plasma by shortening the wavelength of the microwave. Further, the phase of the microwave changes depending on the thickness of the microwave slow wave material 72. Therefore, by adjusting the phase of the microwave according to the thickness of the microwave slow wave material 72, the planar antenna 71 can be adjusted so as to be at the antinode position of the standing wave. As a result, the reflected wave in the flat antenna 71 can be suppressed, and the radiant energy of the microwave radiated from the flat antenna 71 can be increased. That is, this makes it possible to efficiently introduce the power of microwaves into the processing container 2.
マイクロ波透過板73は、誘電体材料によって形成されている。マイクロ波透過板73を形成する誘電体材料としては、例えば石英やセラミックス等が用いられる。マイクロ波透過板73は、マイクロ波をTEモードで効率的に放射することができるような形状をなしている。図5の例では、マイクロ波透過板73は、直方体形状を有している。なお、マイクロ波透過板73の形状は、直方体形状に限らず、例えば円柱形状、五角形柱形状、六角形柱形状、八角形柱形状であってもよい。
The microwave transmission plate 73 is made of a dielectric material. As the dielectric material for forming the microwave transmission plate 73, for example, quartz, ceramics, or the like is used. The microwave transmission plate 73 is shaped so that microwaves can be efficiently radiated in the TE mode. In the example of FIG. 5, the microwave transmission plate 73 has a rectangular parallelepiped shape. The shape of the microwave transmission plate 73 is not limited to the rectangular parallelepiped shape, and may be, for example, a cylindrical shape, a pentagonal pillar shape, a hexagonal pillar shape, or an octagonal pillar shape.
かかる構成のマイクロ波導入機構63では、メインアンプ62Cで増幅されたマイクロ波は、本体容器66の内周面と内側導体67の外周面との間のマイクロ波伝送路68を通って平面アンテナ71に達する。そして、平面アンテナ71のスロット71aからマイクロ波透過板73を透過して処理容器2の内部空間に放射される。
In the microwave introduction mechanism 63 having such a configuration, the microwave amplified by the main amplifier 62C passes through the microwave transmission path 68 between the inner peripheral surface of the main body container 66 and the outer peripheral surface of the inner conductor 67, and is a flat antenna 71. To reach. Then, it is transmitted from the slot 71a of the flat antenna 71 through the microwave transmission plate 73 and radiated into the internal space of the processing container 2.
チューナ64は、スラグチューナを構成している。具体的には、図4に示したように、チューナ64は、本体容器66のアンテナ部65よりも基端側(上端側)の部分に配置される2つのスラグ74A、74Bを有している。更に、チューナ64は、2つのスラグ74A、74Bを動作させるアクチュエータ75と、このアクチュエータ75を制御するチューナコントローラ76とを有している。
Tuner 64 constitutes a slug tuner. Specifically, as shown in FIG. 4, the tuner 64 has two slags 74A and 74B arranged on the base end side (upper end side) of the main body container 66 with respect to the antenna portion 65. .. Further, the tuner 64 has an actuator 75 for operating the two slugs 74A and 74B, and a tuner controller 76 for controlling the actuator 75.
スラグ74A、74Bは、板状且つ環状の形状を有し、本体容器66の内周面と内側導体67の外周面との間に配置されている。また、スラグ74A、74Bは、誘電体材料によって形成されている。スラグ74A、74Bを形成する誘電体材料としては、例えば、比誘電率が10の高純度アルミナを用いることができる。高純度アルミナは、通常、スラグを形成する材料として用いられている石英(比誘電率3.88)やテフロン(登録商標)(比誘電率2.03)よりも比誘電率が大きいため、スラグ74A、74Bの厚みを小さくすることができる。また、高純度アルミナは、石英やテフロン(登録商標)に比べて、誘電正接(tanδ)が小さく、マイクロ波の損失を小さくすることができるという特徴を有している。高純度アルミナは、更に、歪みが小さいという特徴と、熱に強いという特徴も有している。高純度アルミナとしては、純度99.9%以上のアルミナ焼結体であることが好ましい。また、高純度アルミナとして、単結晶アルミナ(サファイア)を用いてもよい。
The slags 74A and 74B have a plate-like and annular shape, and are arranged between the inner peripheral surface of the main body container 66 and the outer peripheral surface of the inner conductor 67. Further, the slags 74A and 74B are formed of a dielectric material. As the dielectric material for forming the slags 74A and 74B, for example, high-purity alumina having a relative permittivity of 10 can be used. High-purity alumina has a higher relative permittivity than quartz (relative permittivity 3.88) and Teflon (registered trademark) (relative permittivity 2.03), which are usually used as materials for forming slag, and therefore slag. The thickness of 74A and 74B can be reduced. Further, high-purity alumina has a feature that the dielectric loss tangent (tan δ) is smaller than that of quartz or Teflon (registered trademark), and the microwave loss can be reduced. High-purity alumina also has a feature of low strain and a feature of being resistant to heat. The high-purity alumina is preferably an alumina sintered body having a purity of 99.9% or more. Moreover, single crystal alumina (sapphire) may be used as high-purity alumina.
チューナ64は、チューナコントローラ76からの指令に基づいて、アクチュエータ75によって、スラグ74A、74Bを上下方向に移動させる。これにより、チューナ64は、インピーダンスを調整する。例えば、チューナコントローラ76は、終端部のインピーダンスが例えば50Ωになるように、スラグ74A、74Bの位置を調整する。
The tuner 64 moves the slags 74A and 74B in the vertical direction by the actuator 75 based on the command from the tuner controller 76. As a result, the tuner 64 adjusts the impedance. For example, the tuner controller 76 adjusts the positions of the slags 74A and 74B so that the impedance of the terminal portion becomes, for example, 50Ω.
本実施形態では、メインアンプ62C、チューナ64および平面アンテナ71は、互いに近接して配置されている。特に、チューナ64および平面アンテナ71は、集中定数回路を構成し、且つ共振器として機能する。平面アンテナ71の取り付け部分には、インピーダンス不整合が存在する。本実施形態では、チューナ64によって、プラズマを含めて高精度でチューニングすることができ、平面アンテナ71における反射の影響を解消することができる。また、チューナ64によって、平面アンテナ71に至るまでのインピーダンス不整合を高精度で解消することができ、実質的に不整合部分をプラズマ空間とすることができる。これにより、チューナ64によって、高精度のプラズマ制御が可能になる。
In this embodiment, the main amplifier 62C, the tuner 64, and the planar antenna 71 are arranged close to each other. In particular, the tuner 64 and the planar antenna 71 form a lumped constant circuit and function as a resonator. Impedance mismatch exists in the mounting portion of the flat antenna 71. In the present embodiment, the tuner 64 can be tuned with high accuracy including plasma, and the influence of reflection on the planar antenna 71 can be eliminated. Further, the tuner 64 can eliminate the impedance mismatch up to the planar antenna 71 with high accuracy, and the mismatched portion can be substantially used as the plasma space. As a result, the tuner 64 enables highly accurate plasma control.
次に、図7を参照して、図1に示した処理容器2の天壁11の底面について説明する。図7は、図1に示した処理容器2の天壁11の底面の一例を示す図である。以下の説明では、マイクロ波透過板73は円柱形状を有するものとする。
Next, with reference to FIG. 7, the bottom surface of the top wall 11 of the processing container 2 shown in FIG. 1 will be described. FIG. 7 is a diagram showing an example of the bottom surface of the top wall 11 of the processing container 2 shown in FIG. In the following description, it is assumed that the microwave transmission plate 73 has a cylindrical shape.
マイクロ波導入モジュール5は、複数のマイクロ波透過板73を含んでいる。前述のように、マイクロ波透過板73は、マイクロ波透過窓に対応する。複数のマイクロ波透過板73は、マイクロ波導入モジュール5の導電性部材である天壁11の複数の開口部に嵌合した状態で、載置台21の載置面21aに平行な1つの仮想の平面上に配置されている。また、複数のマイクロ波透過板73は、上記仮想の平面において、その中心点間の距離が互いに等しいか、ほぼ等しい3つのマイクロ波透過板73を含んでいる。なお、中心点間の距離がほぼ等しいというのは、マイクロ波透過板73の形状精度やアンテナモジュール61(マイクロ波導入機構63)の組み立て精度等の観点から、マイクロ波透過板73の位置は、所望の位置からわずかにずれていてもよいことを意味する。
The microwave introduction module 5 includes a plurality of microwave transmission plates 73. As described above, the microwave transmission plate 73 corresponds to the microwave transmission window. The plurality of microwave transmission plates 73 are fitted in a plurality of openings of the top wall 11 which is a conductive member of the microwave introduction module 5, and are one virtual one parallel to the mounting surface 21a of the mounting table 21. It is arranged on a plane. Further, the plurality of microwave transmission plates 73 include three microwave transmission plates 73 whose center points are equal to or substantially equal to each other in the virtual plane. The fact that the distances between the center points are almost equal means that the position of the microwave transmission plate 73 is determined from the viewpoint of the shape accuracy of the microwave transmission plate 73 and the assembly accuracy of the antenna module 61 (microwave introduction mechanism 63). It means that it may be slightly deviated from the desired position.
本実施形態では、複数のマイクロ波透過板73は、六方最密配置になるように配置された7つのマイクロ波透過板73からなるものである。具体的には、複数のマイクロ波透過板73は、7つのマイクロ波透過板73A~73Gを有する。そのうちの6つのマイクロ波透過板73A~73Fは、その中心点がそれぞれ正六角形の頂点に一致又はほぼ一致するように配置されている。1つのマイクロ波透過板73Gは、その中心点が正六角形の中心に一致又はほぼ一致するように配置されている。なお、頂点又は中心点にほぼ一致するとは、マイクロ波透過板73の形状精度やアンテナモジュール61(マイクロ波導入機構63)の組み立て精度等の観点からマイクロ波透過板73の中心点は上記の頂点または中心からわずかにずれていてもよいことを意味する。
In the present embodiment, the plurality of microwave transmission plates 73 are composed of seven microwave transmission plates 73 arranged so as to be arranged in a hexagonal close-packed manner. Specifically, the plurality of microwave transmission plates 73 have seven microwave transmission plates 73A to 73G. The six microwave transmission plates 73A to 73F are arranged so that their center points coincide with or substantially coincide with the vertices of the regular hexagon, respectively. One microwave transmission plate 73G is arranged so that its center point coincides with or substantially coincides with the center of a regular hexagon. It should be noted that the center point of the microwave transmission plate 73 is the above-mentioned apex from the viewpoint of the shape accuracy of the microwave transmission plate 73 and the assembly accuracy of the antenna module 61 (microwave introduction mechanism 63). Or it means that it may be slightly off center.
図7に示したように、マイクロ波透過板73Gは、天壁11における中央部分に配置されている。6つのマイクロ波透過板73A~73Fは、マイクロ波透過板73Gを囲むように、天壁11の中央部分よりも外側に配置されている。従って、マイクロ波透過板73Gは、中心マイクロ波透過窓に対応し、マイクロ波透過板73A~73Fは、外側マイクロ波透過窓に対応する。なお、本実施形態において、「天壁11における中央部分」というのは、「天壁11の平面形状における中央部分」を意味する。
As shown in FIG. 7, the microwave transmission plate 73G is arranged at the central portion of the top wall 11. The six microwave transmitting plates 73A to 73F are arranged outside the central portion of the top wall 11 so as to surround the microwave transmitting plates 73G. Therefore, the microwave transmission plate 73G corresponds to the central microwave transmission window, and the microwave transmission plates 73A to 73F correspond to the outer microwave transmission window. In the present embodiment, the "central portion of the top wall 11" means the "central portion of the top wall 11 in the planar shape".
本実施形態では、全てのマイクロ波透過板73において、互いに隣接する任意の3つのマイクロ波透過板73の中心点間の距離は、互いに等しいか、ほぼ等しくなる。ガスノズル163及びガスノズル183は、外側のマイクロ波透過板73A~73Gと中心のマイクロ波透過板73Gとの間にて周方向に配置される。
In the present embodiment, in all the microwave transmitting plates 73, the distances between the center points of any three microwave transmitting plates 73 adjacent to each other are equal to or substantially equal to each other. The gas nozzle 163 and the gas nozzle 183 are arranged in the circumferential direction between the outer microwave transmission plates 73A to 73G and the central microwave transmission plate 73G.
ここで、マイクロ波透過板73A~73Gの配置に示すように、マイクロ波導入機構63のアンテナ部65は、中心に1つ(マイクロ波透過板73G参照)、外周部に6つ(マイクロ波透過板73A~73F参照)配置されている。このため、マイクロ波導入機構63のアンテナ部65の配置は、周方向に6回の対称性を有している。
Here, as shown in the arrangement of the microwave transmission plates 73A to 73G, the antenna portion 65 of the microwave introduction mechanism 63 has one in the center (see the microwave transmission plate 73G) and six in the outer peripheral portion (microwave transmission). (See plates 73A to 73F) are arranged. Therefore, the arrangement of the antenna portion 65 of the microwave introduction mechanism 63 has symmetry six times in the circumferential direction.
また、図7に第1のガス供給部16及び第3のガス供給部18を示す。なお、図7において、天壁11内に形成されるガス導入路161、ガス拡散空間162、ガス導入路181、ガス拡散空間182は、隠れ線(破線)で図示している。
Further, FIG. 7 shows a first gas supply unit 16 and a third gas supply unit 18. In FIG. 7, the gas introduction path 161, the gas diffusion space 162, the gas introduction path 181 and the gas diffusion space 182 formed in the top wall 11 are shown by hidden lines (broken lines).
図7に示す一例において、天壁11の裏面には、周方向に計12個のガスノズル163が等間隔に配置されている。ここで、ガス拡散空間162は、周方向に3分割されている。また、1つの円弧状のガス拡散空間162に対して、4個のガスノズル163が設けられている。このため、第1のガス供給部16の流路構造の配置は、周方向に3回の対称性を有している。なお、ガス供給源31から各ガス導入路161へのガス供給は、分割されたガス拡散空間162ごとにマスフローコントローラ(図示せず)が設けられており、ガス供給源31から各ガス導入路161に供給するガス流量を個別に調整することができるように構成されていてもよい。また、ガス供給源31から各ガス導入路161へのガス供給は、1つのマスフローコントローラ(図示せず)で流量制御されたガスを分岐して、各ガス導入路161に供給する構成であってもよい。
In the example shown in FIG. 7, a total of 12 gas nozzles 163 are arranged at equal intervals on the back surface of the top wall 11 in the circumferential direction. Here, the gas diffusion space 162 is divided into three in the circumferential direction. Further, four gas nozzles 163 are provided for one arc-shaped gas diffusion space 162. Therefore, the arrangement of the flow path structure of the first gas supply unit 16 has symmetry three times in the circumferential direction. For gas supply from the gas supply source 31 to each gas introduction path 161, a mass flow controller (not shown) is provided for each divided gas diffusion space 162, and each gas introduction path 161 from the gas supply source 31 is provided. It may be configured so that the flow rate of the gas supplied to the gas can be adjusted individually. Further, the gas supply from the gas supply source 31 to each gas introduction path 161 is configured to branch the gas whose flow rate is controlled by one mass flow controller (not shown) and supply the gas to each gas introduction path 161. May be good.
また、天壁11の裏面には、周方向に計12個のガスノズル183が等間隔に配置されている。なお、ガス拡散空間182は、周方向に分割されておらず、円環状に形成されている。また、円環状のガス拡散空間182に対して、12個のガスノズル183が設けられている。なお、ガス拡散空間182に対して、3つのガス導入路181が設けられている。なお、ガス供給源31から各ガス導入路181へのガス供給は、各ガス導入路181ごとにマスフローコントローラ(図示せず)が設けられており、ガス供給源31から各ガス導入路181に供給するガス流量を個別に調整することができるように構成されていてもよい。また、ガス供給源31から各ガス導入路181へのガス供給は、1つのマスフローコントローラ(図示せず)で流量制御されたガスを分岐して、各ガス導入路181に供給する構成であってもよい。
Further, on the back surface of the top wall 11, a total of 12 gas nozzles 183 are arranged at equal intervals in the circumferential direction. The gas diffusion space 182 is not divided in the circumferential direction, but is formed in an annular shape. Further, 12 gas nozzles 183 are provided for the annular gas diffusion space 182. Three gas introduction paths 181 are provided for the gas diffusion space 182. A mass flow controller (not shown) is provided for each gas introduction path 181 for gas supply from the gas supply source 31 to each gas introduction path 181, and the gas is supplied from the gas supply source 31 to each gas introduction path 181. It may be configured so that the gas flow rate to be used can be adjusted individually. Further, the gas supply from the gas supply source 31 to each gas introduction path 181 is configured to branch the gas whose flow rate is controlled by one mass flow controller (not shown) and supply the gas to each gas introduction path 181. May be good.
図8は、図1に示した処理容器2の側壁12の水平断面の一例を示す図である。図8に示す一例において、側壁12の内壁面には、周方向に計30個のガスノズル173が等間隔に配置されている。ここで、ガス拡散空間172は、周方向に6分割されている。また、1つの円弧状のガス拡散空間172に対して、5個のガスノズル173が設けられている。このため、第2のガス供給部17の流路構造の配置は、周方向に6回の対称性を有している。なお、ガス供給源31から各ガス導入路171へのガス供給は、分割されたガス拡散空間172ごとにマスフローコントローラ(図示せず)が設けられており、ガス供給源31から各ガス導入路171に供給するガス流量を個別に調整することができるように構成されていてもよい。また、ガス供給源31から各ガス導入路171へのガス供給は、1つのマスフローコントローラ(図示せず)で流量制御されたガスを分岐して、各ガス導入路171に供給する構成であってもよい。
FIG. 8 is a diagram showing an example of a horizontal cross section of the side wall 12 of the processing container 2 shown in FIG. In the example shown in FIG. 8, a total of 30 gas nozzles 173 are arranged at equal intervals on the inner wall surface of the side wall 12 in the circumferential direction. Here, the gas diffusion space 172 is divided into six in the circumferential direction. Further, five gas nozzles 173 are provided for one arc-shaped gas diffusion space 172. Therefore, the arrangement of the flow path structure of the second gas supply unit 17 has symmetry 6 times in the circumferential direction. For gas supply from the gas supply source 31 to each gas introduction path 171, a mass flow controller (not shown) is provided for each divided gas diffusion space 172, and each gas introduction path 171 from the gas supply source 31 is provided. It may be configured so that the flow rate of the gas supplied to the gas can be adjusted individually. Further, the gas supply from the gas supply source 31 to each gas introduction path 171 is configured to branch the gas whose flow rate is controlled by one mass flow controller (not shown) and supply the gas to each gas introduction path 171. May be good.
図9は、参考例における基板Wの内周部、中間部、外周部における周方向に対するSiN膜の膜厚の変化を示すグラフの一例である。ここでは、参考例として、周方向に配置される複数のガスノズル同士のコンダクタンスが等しいものとして、プラズマ処理装置1を用いて基板WにSiN膜を成膜したものとする。図9において、横軸は基板Wの周方向角度を示し、縦軸は膜厚を示す。また、半径150mmの基板Wに対して、内周部(半径R=49mmの円周上)の膜厚変動、中間部(半径R=98mmの円周上)の膜厚変動、外周部(半径R=147mmの円周上)の膜厚変動を示す。
FIG. 9 is an example of a graph showing changes in the film thickness of the SiN film with respect to the circumferential direction in the inner peripheral portion, the intermediate portion, and the outer peripheral portion of the substrate W in the reference example. Here, as a reference example, it is assumed that the conductances of the plurality of gas nozzles arranged in the circumferential direction are equal, and a SiN film is formed on the substrate W by using the plasma processing apparatus 1. In FIG. 9, the horizontal axis represents the circumferential angle of the substrate W, and the vertical axis represents the film thickness. Further, with respect to the substrate W having a radius of 150 mm, the film thickness of the inner peripheral portion (on the circumference of the radius R = 49 mm) fluctuates, the film thickness of the intermediate portion (on the circumference of the radius R = 98 mm) fluctuates, and the outer peripheral portion (radius). The film thickness variation (on the circumference of R = 147 mm) is shown.
図9に示すように、基板Wの外周部において、6回の周期的な膜厚変動が表れている。これは、マイクロ波導入機構63のアンテナ部65の配置が周方向に6回の対称性を有していることにより、マイクロ波導入モジュール5によって生成されるプラズマも周方向に対して不均一性を有し、基板Wに成膜されたSiN膜の膜厚も不均一となる。
As shown in FIG. 9, the film thickness fluctuates 6 times periodically on the outer peripheral portion of the substrate W. This is because the arrangement of the antenna portion 65 of the microwave introduction mechanism 63 has symmetry six times in the circumferential direction, so that the plasma generated by the microwave introduction module 5 is also non-uniform with respect to the circumferential direction. The thickness of the SiN film formed on the substrate W is also non-uniform.
これに対し、本実施形態に係るプラズマ処理装置1は、各ガスノズル163,173,183ごとに、処理容器2内に供給するガス流量を調整する流量調整機構を有している。
On the other hand, the plasma processing apparatus 1 according to the present embodiment has a flow rate adjusting mechanism for adjusting the flow rate of the gas supplied into the processing container 2 for each gas nozzle 163, 173, 183.
図10は、流量調整機構によるガス流量の調整の一例を示す模式図である。基板Wには、膜厚が厚くなる領域901と、膜厚が薄くなる領域902とが、周方向に交互に合られている。図10に示す一例では、第2のガス供給部17において、膜厚が厚い領域901へと向かうガスの流量を減らし(図10において黒塗り矢印で示す。)、膜厚が薄い領域902へと向かうガスの流量を増やす(図10において白抜き矢印で示す。)。即ち、図10の例では、ガスノズル173A,173Eにコンダクタンスの小さなガスノズルを用い、ガスノズル173Cにコンダクタンスの大きなガスノズルを用いる。即ち、ガスノズル173A~173Eから処理容器2内に供給されるガス流量を不均一にしてもよい。
FIG. 10 is a schematic diagram showing an example of adjusting the gas flow rate by the flow rate adjusting mechanism. Regions 901 where the film thickness is thickened and regions 902 where the film thickness is thin are alternately formed on the substrate W in the circumferential direction. In the example shown in FIG. 10, in the second gas supply unit 17, the flow rate of the gas toward the thick region 901 is reduced (indicated by the black arrow in FIG. 10) to the thin region 902. Increase the flow rate of the gas going toward it (indicated by the white arrow in FIG. 10). That is, in the example of FIG. 10, a gas nozzle having a small conductance is used for the gas nozzles 173A and 173E, and a gas nozzle having a large conductance is used for the gas nozzle 173C. That is, the gas flow rate supplied from the gas nozzles 173A to 173E into the processing container 2 may be non-uniform.
これにより、マイクロ波導入機構63のアンテナ部65の配置に起因する膜厚の変動に対して、ガスノズル173A~173Eから処理容器2内に供給されるガス流量を調整することで、膜厚変動を抑制する。これにより、基板Wに形成されるSiN膜の膜厚の周方向における均一性を向上することができる。即ち、第2のガス供給部17における周方向に複数配置されるガスノズル173のコンダクタンスの組み合わせを調整することで、基板Wに形成されるSiN膜の膜厚の周方向における均一性を向上することができる。
As a result, the film thickness variation is adjusted by adjusting the gas flow rate supplied from the gas nozzles 173A to 173E into the processing container 2 with respect to the film thickness variation caused by the arrangement of the antenna portion 65 of the microwave introduction mechanism 63. Suppress. As a result, the uniformity of the film thickness of the SiN film formed on the substrate W in the circumferential direction can be improved. That is, by adjusting the combination of the conductances of the plurality of gas nozzles 173 arranged in the circumferential direction in the second gas supply unit 17, the uniformity of the film thickness of the SiN film formed on the substrate W in the circumferential direction is improved. Can be done.
例えば、基板Wの外周側において、外側のマイクロ波透過板73A~73Fの下方に膜厚が薄くなる領域902が形成され、周方向に隣接するマイクロ波透過板73A~73F同士の間の下方に膜厚が厚くなる領域901が形成される。処理容器2を垂直方向視した際、外側のマイクロ波導入機構63のアンテナ部65(外側のマイクロ波透過板73A~73F)に向かってガスを噴出するガスノズル173Cの流量を、外側のマイクロ波導入機構63のアンテナ部65の間に向かってガスを噴出するガスノズル173A,173Eの流量よりも大きくする。これにより、基板Wに形成されるSiN膜の膜厚の周方向における均一性を向上することができる。
For example, on the outer peripheral side of the substrate W, a region 902 having a thin film thickness is formed below the outer microwave transmitting plates 73A to 73F, and below between the microwave transmitting plates 73A to 73F adjacent to each other in the circumferential direction. A region 901 where the film thickness becomes thick is formed. When the processing container 2 is viewed in the vertical direction, the flow rate of the gas nozzle 173C that ejects gas toward the antenna portions 65 (outer microwave transmission plates 73A to 73F) of the outer microwave introduction mechanism 63 is introduced into the outer microwave. The flow rate is made larger than the flow rate of the gas nozzles 173A and 173E that eject gas between the antenna portions 65 of the mechanism 63. As a result, the uniformity of the film thickness of the SiN film formed on the substrate W in the circumferential direction can be improved.
より具体的には、ガスノズル173は、略円筒形状の処理容器2の側壁12に沿うように等間隔で設けられているものとし、それぞれのガスノズル173のガス噴出方向は、基板Wの中心に向かう方向とする。処理容器2上方から載置台21を見た(基板Wに平行な面に投影した)際、ガス噴出方向に外側のマイクロ波透過板73A~73Fのいずれかがが存在するガスノズル173のガス噴出量が、ガス噴出方向に外側のマイクロ波透過板73A~73Fが存在しないガスノズル173のガス噴出量よりも多くなるようにする。この様な構成により、外側のマイクロ波透過板73A~73Fの下方(膜厚が薄くなる領域902)に供給されるガスの流量を、外側のマイクロ波透過板73A~73F同士の間の下方(膜厚が厚くなる領域901)に供給されるガスの流量よりも多くすることができる。これにより、基板Wに形成されるSiN膜の膜厚の周方向における均一性を向上することができる。
More specifically, it is assumed that the gas nozzles 173 are provided at equal intervals along the side wall 12 of the substantially cylindrical processing container 2, and the gas ejection direction of each gas nozzle 173 is toward the center of the substrate W. The direction. When the mounting table 21 is viewed from above the processing container 2 (projected on a plane parallel to the substrate W), the amount of gas ejected from the gas nozzle 173 in which any of the outer microwave transmitting plates 73A to 73F is present in the gas ejection direction. However, the amount of gas ejected from the gas nozzle 173 in which the outer microwave transmitting plates 73A to 73F do not exist in the gas ejection direction is increased. With such a configuration, the flow rate of the gas supplied to the lower side (the region 902 where the film thickness becomes thin) of the outer microwave transmission plates 73A to 73F is set to the lower side (between the outer microwave transmission plates 73A to 73F). It can be made larger than the flow rate of the gas supplied to the region 901) where the film thickness becomes thick. As a result, the uniformity of the film thickness of the SiN film formed on the substrate W in the circumferential direction can be improved.
図11は、ガスの供給位置の違いによる基板Wの外周部に形成されるSiN膜の膜厚を示すグラフの一例である。横軸は周方向角度を示し、縦軸は規格化された膜厚を示す。グラフ801は第2のガス供給部17からガスを供給して成膜した場合を示す。グラフ802は第1のガス供給部16からガスを供給して成膜した場合を示す。グラフ803は第1のガス供給部16及び第2のガス供給部17の両方からガスを供給して成膜した場合を示す。
FIG. 11 is an example of a graph showing the film thickness of the SiN film formed on the outer peripheral portion of the substrate W due to the difference in the gas supply position. The horizontal axis indicates the circumferential angle, and the vertical axis indicates the standardized film thickness. Graph 801 shows a case where gas is supplied from the second gas supply unit 17 to form a film. Graph 802 shows a case where gas is supplied from the first gas supply unit 16 to form a film. Graph 803 shows a case where gas is supplied from both the first gas supply unit 16 and the second gas supply unit 17 to form a film.
図12は、ガスの供給位置の違いによる基板Wに形成されるSiN膜の膜厚を示すグラフである。横軸は基板Wの中心からの距離(径方向距離)を示し、縦軸は膜厚を示す。グラフ804は第2のガス供給部17からガスを供給して成膜した場合を示す。グラフ805は第1のガス供給部16からガスを供給して成膜した場合を示す。グラフ806は第1のガス供給部16及び第2のガス供給部17の両方からガスを供給して成膜した場合を示す。
FIG. 12 is a graph showing the film thickness of the SiN film formed on the substrate W due to the difference in the gas supply position. The horizontal axis represents the distance from the center of the substrate W (distance in the radial direction), and the vertical axis represents the film thickness. Graph 804 shows a case where gas is supplied from the second gas supply unit 17 to form a film. Graph 805 shows a case where gas is supplied from the first gas supply unit 16 to form a film. Graph 806 shows a case where gas is supplied from both the first gas supply unit 16 and the second gas supply unit 17 to form a film.
図11に示すように、第1のガス供給部16及び第2のガス供給部17からガスを供給することにより、周方向における膜厚の偏りを低減することができる。ここでは、均一性の指標であるRange/Average値((最大値-最小値)/平均値)で、グラフ803はグラフ801,802と比較して6~7割の改善が見られた。また、図12に示すように、第1のガス供給部16及び第2のガス供給部17からガスを供給することにより、径方向における膜厚の偏りを低減することができる。
As shown in FIG. 11, by supplying gas from the first gas supply unit 16 and the second gas supply unit 17, it is possible to reduce the unevenness of the film thickness in the circumferential direction. Here, in the Range / Average value ((maximum value-minimum value) / average value), which is an index of uniformity, the graph 803 showed an improvement of 60 to 70% as compared with the graphs 801 and 802. Further, as shown in FIG. 12, by supplying gas from the first gas supply unit 16 and the second gas supply unit 17, it is possible to reduce the unevenness of the film thickness in the radial direction.
即ち、第2のガス供給部17における周方向に複数配置されるガスノズル173のコンダクタンスの組み合わせと、第1のガス供給部16における周方向に複数配置されるガスノズル163のコンダクタンスの組み合わせと、を調整することで、基板Wに形成されるSiN膜の膜厚の周方向及び径方向における均一性を向上することができる。
That is, the combination of the conductances of the gas nozzles 173 arranged in the circumferential direction in the second gas supply unit 17 and the conductance combination of the gas nozzles 163 arranged in the circumferential direction in the first gas supply unit 16 are adjusted. By doing so, the uniformity of the film thickness of the SiN film formed on the substrate W in the circumferential direction and the radial direction can be improved.
<他の流量調整機構>
なお、流量調整機構として、各ガスノズル163,173,183が交換可能に構成されているものとして説明したが、流量調整機構はこれに限られるものではない。 <Other flow rate adjustment mechanism>
Although it has been described that the gas nozzles 163, 173, and 183 are interchangeably configured as the flow rate adjusting mechanism, the flow rate adjusting mechanism is not limited to this.
なお、流量調整機構として、各ガスノズル163,173,183が交換可能に構成されているものとして説明したが、流量調整機構はこれに限られるものではない。 <Other flow rate adjustment mechanism>
Although it has been described that the
図13は、他の流量調整機構の一例を示す模式図である。図13に示すように、第1のガス供給部16において、ガス拡散空間162とガスノズル163との間に可変オリフィス等の流量調整機構165を設けてもよい。また、図示は省略するが、第2のガス供給部17において、ガス拡散空間172とガスノズル173との間に可変オリフィス等の流量調整機構を設けてもよい。
FIG. 13 is a schematic view showing an example of another flow rate adjusting mechanism. As shown in FIG. 13, in the first gas supply unit 16, a flow rate adjusting mechanism 165 such as a variable orifice may be provided between the gas diffusion space 162 and the gas nozzle 163. Although not shown, a flow rate adjusting mechanism such as a variable orifice may be provided between the gas diffusion space 172 and the gas nozzle 173 in the second gas supply unit 17.
図14は、更に他の流量調整機構の一例を示す模式図である。図14に示すように、第1のガス供給部16において、ガス拡散空間162に可変オリフィス等の流量調整機構166を設けてもよい。また、図示は省略するが、第2のガス供給部17において、ガス拡散空間172に可変オリフィス等の流量調整機構を設けてもよい。
FIG. 14 is a schematic view showing an example of still another flow rate adjusting mechanism. As shown in FIG. 14, in the first gas supply unit 16, a flow rate adjusting mechanism 166 such as a variable orifice may be provided in the gas diffusion space 162. Further, although not shown, the second gas supply unit 17 may be provided with a flow rate adjusting mechanism such as a variable orifice in the gas diffusion space 172.
<流量調整機構のガス流量調整方法>
次に、流量調整機構のガス流量調整方法について、図15を用いて説明する。図15は、ガス流量調整方法を説明するフローチャートである。 <Gas flow rate adjustment method of flow rate adjustment mechanism>
Next, the gas flow rate adjusting method of the flow rate adjusting mechanism will be described with reference to FIG. FIG. 15 is a flowchart illustrating a gas flow rate adjusting method.
次に、流量調整機構のガス流量調整方法について、図15を用いて説明する。図15は、ガス流量調整方法を説明するフローチャートである。 <Gas flow rate adjustment method of flow rate adjustment mechanism>
Next, the gas flow rate adjusting method of the flow rate adjusting mechanism will be described with reference to FIG. FIG. 15 is a flowchart illustrating a gas flow rate adjusting method.
ステップS101において、プラズマ処理装置1を用いて基板Wにプラズマ処理を施す。ここでは、プロセス条件に基づいて基板WにSiN膜を成膜する。プラズマ処理のプロセス条件の情報として、ガス種(プロセスガス、励起ガス等)、マスフローコントローラによるガス供給源31から各ガス拡散空間162,172,182へのガス流量、圧力、温度(基板温度、処理容器2の壁面温度)、プラズマパワー(各アンテナユニット60におけるマイクロ波出力)を含む。また、プラズマ処理を行った際のプラズマ処理装置1における流量調整機構の情報として、各ガスノズル163,173,183のノズル径、ノズルコンダクタンスを含む。なお、各ガスノズル163,173,183のノズル径は設計値を用いることができる。また、各ガスノズル163,173,183のコンダクタンスは予め測定されている。なお、流量調整機構が図13または図14に示す可変オリフィス等の流量調整機構165である場合、流量調整機構の情報として、各可変オリフィスのオリフィス径を含む。
In step S101, the substrate W is subjected to plasma processing using the plasma processing device 1. Here, a SiN film is formed on the substrate W based on the process conditions. As information on the process conditions of plasma processing, gas type (process gas, excitation gas, etc.), gas flow rate, pressure, temperature (substrate temperature, processing) from the gas supply source 31 by the mass flow controller to each gas diffusion space 162, 172, 182. The wall surface temperature of the container 2) and plasma power (microwave output in each antenna unit 60) are included. Further, the information of the flow rate adjusting mechanism in the plasma processing device 1 when the plasma processing is performed includes the nozzle diameter and the nozzle conductance of each gas nozzle 163, 173, 183. Design values can be used for the nozzle diameters of the gas nozzles 163, 173, and 183. Further, the conductance of each gas nozzle 163, 173, 183 is measured in advance. When the flow rate adjusting mechanism is a flow rate adjusting mechanism 165 such as the variable orifice shown in FIG. 13 or 14, the information of the flow rate adjusting mechanism includes the orifice diameter of each variable orifice.
ステップS102において、ステップS101のプラズマ処理のプロセス結果を測定する。ここでは、プロセス結果として、基板Wに成膜されたSiN膜の膜厚および/または屈折率を測定する。測定点は、基板Wの周方向及び径方向に複数設けられる。例えば、基板Wと同心の径の異なる複数の円上にそれぞれ複数の測定点が設けられてもよい。
In step S102, the process result of the plasma treatment in step S101 is measured. Here, as a result of the process, the film thickness and / or the refractive index of the SiN film formed on the substrate W is measured. A plurality of measurement points are provided in the circumferential direction and the radial direction of the substrate W. For example, a plurality of measurement points may be provided on a plurality of circles having different diameters concentric with the substrate W.
ステップS103において、ステップS101におけるプラズマ処理のプロセス条件及び流量調整機構の情報、ステップS102におけるプロセス結果に基づいて、流量調整機構の調整内容を決定する。
In step S103, the adjustment content of the flow rate adjusting mechanism is determined based on the process conditions of the plasma processing in step S101, the information of the flow rate adjusting mechanism, and the process result in step S102.
図16は、調整内容決定装置500の一例を示すブロック図である。調整内容決定装置500は、例えば、コンピュータ・サーバ等である。調整内容決定装置500は、入力部501と、解析部502と、出力部503と、を備える。
FIG. 16 is a block diagram showing an example of the adjustment content determination device 500. The adjustment content determination device 500 is, for example, a computer server or the like. The adjustment content determining device 500 includes an input unit 501, an analysis unit 502, and an output unit 503.
入力部501には、入力情報として、ステップS101におけるプラズマ処理のプロセス条件及び流量調整機構の情報、ステップS102におけるプロセス結果が入力される。
Information on the plasma processing process conditions and flow rate adjusting mechanism in step S101 and the process result in step S102 are input to the input unit 501 as input information.
解析部502は、入力部501で入力された入力情報に基づいて解析を行い、出力情報を出力する。出力情報には、プラズマ処理のプロセス条件及び流量調整機構の情報を含む。
The analysis unit 502 analyzes based on the input information input by the input unit 501 and outputs the output information. The output information includes information on the process conditions of plasma processing and the flow rate adjusting mechanism.
解析部502は、膜厚が均一化するように、および/または、屈折率が均一化するように、出力情報を決定する。具体的には、解析部502は、基板Wの周方向のプロセス結果(膜厚および/または屈折率)が均一化するように、出力情報を決定する。
The analysis unit 502 determines the output information so that the film thickness is uniform and / or the refractive index is uniform. Specifically, the analysis unit 502 determines the output information so that the process result (film thickness and / or refractive index) in the circumferential direction of the substrate W becomes uniform.
解析部502は、例えば、実験計画法に基づいて、出力情報を決定する構成であってもよい。
The analysis unit 502 may be configured to determine output information based on, for example, a design of experiments.
また、解析部502は、例えば、機械学習に基づいて、出力情報を決定する構成であってもよい。即ち、解析部502は、予め、プラズマ処理のプロセス条件及び流量調整機構の情報を入力データとし、プラズマ処理のプロセス結果を出力データとして、機械学習により学習済モデルを生成する。解析部502は、入力情報及び学習済モデルに基づいて、出力情報を決定する。
Further, the analysis unit 502 may be configured to determine output information based on, for example, machine learning. That is, the analysis unit 502 generates a trained model by machine learning in advance using the plasma processing process conditions and the information of the flow rate adjustment mechanism as input data and the plasma processing process result as output data. The analysis unit 502 determines the output information based on the input information and the trained model.
なお、解析部502は、入力情報に基づいて、出力情報を直接導出してもよい。また、解析部502は、入力情報に基づいて中間出力情報を導出し、中間出力情報に基づいて出力情報を算出してもよい。ここで、中間出力情報としては、基板Wの測定点におけるガスノズル(ノズル径、コンダクタンス)の感度係数(寄与度)としてもよい。ここで、測定点の数をAとし、ガスノズル数をBとすると、A×B通りの感度係数を決定する。また、ノズル間に相互作用がある場合、A×BC2通りの感度係数を決定する。なお、流量調整機構が図13または図14に示す可変オリフィス等の流量調整機構165である場合、中間出力情報としては、各流量調整機構165(可変オリフィス)の感度係数(寄与度)としてもよい。
The analysis unit 502 may directly derive the output information based on the input information. Further, the analysis unit 502 may derive the intermediate output information based on the input information and calculate the output information based on the intermediate output information. Here, the intermediate output information may be the sensitivity coefficient (contribution degree) of the gas nozzle (nozzle diameter, conductance) at the measurement point of the substrate W. Here, assuming that the number of measurement points is A and the number of gas nozzles is B, the sensitivity coefficients as A × B are determined. When there is interaction between the nozzles, determine the sensitivity coefficients A × B C 2 ways. When the flow rate adjusting mechanism is a flow rate adjusting mechanism 165 such as the variable orifice shown in FIG. 13 or 14, the intermediate output information may be the sensitivity coefficient (contribution) of each flow rate adjusting mechanism 165 (variable orifice). ..
出力部503は、出力情報を出力する。調整内容決定装置500の出力情報は、ステップS104で用いられる。また、出力部503は、中間出力情報を出力してもよい。調整内容決定装置500の中間出力情報は、物理考察や故障判断等に用いることができる。
The output unit 503 outputs output information. The output information of the adjustment content determination device 500 is used in step S104. Further, the output unit 503 may output intermediate output information. The intermediate output information of the adjustment content determination device 500 can be used for physical consideration, failure determination, and the like.
図15に戻り、ステップS104において、ステップS103の結果に基づいて、流量調整機構を調整することにより、ガス流量を調整する。ここでは、ステップS103で求められた各ガスノズル163,173,183のノズル径、ノズルコンダクタンスとなるように、各ガスノズル163,173,183を交換する。なお、流量調整機構が図13または図14に示す可変オリフィス等の流量調整機構165である場合、各流量調整機構165のオリフィス径を調整する。
Returning to FIG. 15, in step S104, the gas flow rate is adjusted by adjusting the flow rate adjusting mechanism based on the result of step S103. Here, each gas nozzle 163, 173, 183 is replaced so that the nozzle diameter and nozzle conductance of each gas nozzle 163, 173, 183 obtained in step S103 are obtained. When the flow rate adjusting mechanism is a flow rate adjusting mechanism 165 such as the variable orifice shown in FIG. 13 or 14, the orifice diameter of each flow rate adjusting mechanism 165 is adjusted.
今回開示された一実施形態に係るプラズマ処理装置1は、すべての点において例示であって制限的なものではないと考えられるべきである。上記の実施形態は、添付の請求の範囲及びその主旨を逸脱することなく、様々な形態で変形及び改良が可能である。上記複数の実施形態に記載された事項は、矛盾しない範囲で他の構成も取り得ることができ、また、矛盾しない範囲で組み合わせることができる。
It should be considered that the plasma processing apparatus 1 according to the embodiment disclosed this time is an example in all respects and is not restrictive. The above embodiments can be modified and improved in various forms without departing from the scope of the appended claims and their gist. The matters described in the plurality of embodiments may have other configurations within a consistent range, and may be combined within a consistent range.
第1のガス供給部16は、ガス拡散空間162が周方向に分割して形成されるものとして説明したが、これに限られるものではなく、円環状に形成されていてもよい。同様に、第2のガス供給部17は、ガス拡散空間172が周方向に分割して形成されるものとして説明したが、これに限られるものではなく、円環状に形成されていてもよい。また、第3のガス供給部18は、ガス拡散空間182が円環状に形成されるものとして説明したが、これに限られるものではなく、周方向に分割して形成されていてもよい。
The first gas supply unit 16 has been described as being formed by dividing the gas diffusion space 162 in the circumferential direction, but the present invention is not limited to this, and the gas diffusion space 162 may be formed in an annular shape. Similarly, the second gas supply unit 17 has been described as being formed by dividing the gas diffusion space 172 in the circumferential direction, but the present invention is not limited to this, and the gas diffusion space 172 may be formed in an annular shape. Further, the third gas supply unit 18 has been described as having the gas diffusion space 182 formed in an annular shape, but the present invention is not limited to this, and the third gas supply unit 18 may be formed by being divided in the circumferential direction.
尚、本願は、2020年2月5日に出願した日本国特許出願2020-18135号に基づく優先権を主張するものであり、これらの日本国特許出願の全内容を本願に参照により援用する。
Note that this application claims priority based on Japanese Patent Application No. 2020-18135 filed on February 5, 2020, and the entire contents of these Japanese patent applications are incorporated herein by reference.
W 基板
1 プラズマ処理装置
2 処理容器
21 載置台
3 ガス供給機構
4 排気装置
5 マイクロ波導入モジュール(プラズマ生成部)
8 制御部
16 ガス供給部
161 ガス導入路
162 ガス拡散空間
163 ガスノズル
164 ガス供給孔
17 ガス供給部
171 ガス導入路
172 ガス拡散空間
173 ガスノズル
174 ガス供給孔
18 ガス供給部
181 ガス導入路
182 ガス拡散空間
183 ガスノズル
184 ガス供給孔
500 調整内容決定装置
501 入力部
502 解析部
503 出力部 W Substrate 1Plasma processing device 2 Processing container 21 Mounting stand 3 Gas supply mechanism 4 Exhaust device 5 Microwave introduction module (plasma generator)
8Control unit 16 Gas supply unit 161 Gas introduction path 162 Gas diffusion space 163 Gas nozzle 164 Gas supply hole 17 Gas supply unit 171 Gas introduction path 172 Gas diffusion space 173 Gas nozzle 174 Gas supply hole 18 Gas supply unit 181 Gas introduction path 182 Gas diffusion Space 183 Gas nozzle 184 Gas supply hole 500 Adjustment content determination device 501 Input unit 502 Analysis unit 503 Output unit
1 プラズマ処理装置
2 処理容器
21 載置台
3 ガス供給機構
4 排気装置
5 マイクロ波導入モジュール(プラズマ生成部)
8 制御部
16 ガス供給部
161 ガス導入路
162 ガス拡散空間
163 ガスノズル
164 ガス供給孔
17 ガス供給部
171 ガス導入路
172 ガス拡散空間
173 ガスノズル
174 ガス供給孔
18 ガス供給部
181 ガス導入路
182 ガス拡散空間
183 ガスノズル
184 ガス供給孔
500 調整内容決定装置
501 入力部
502 解析部
503 出力部 W Substrate 1
8
Claims (15)
- 基板を載置する載置台を収容する処理容器と、
前記処理容器にガスを供給するガス供給部と、
前記処理容器内にプラズマを生成するプラズマ生成部と、を備え、
前記ガス供給部は、
周方向に配置される複数のガスノズルと、
複数の前記ガスノズルの流量を調整する流量調整機構と、を有する、
プラズマ処理装置。 A processing container that houses a mounting table on which the substrate is placed,
A gas supply unit that supplies gas to the processing container and
A plasma generating unit for generating plasma is provided in the processing container.
The gas supply unit
With multiple gas nozzles arranged in the circumferential direction,
It has a flow rate adjusting mechanism for adjusting the flow rate of the plurality of gas nozzles.
Plasma processing equipment. - 前記プラズマ生成部は、
マイクロ波を照射するアンテナを周方向に複数配置される、
請求項1に記載のプラズマ処理装置。 The plasma generator
Multiple antennas that irradiate microwaves are arranged in the circumferential direction.
The plasma processing apparatus according to claim 1. - 前記ガス供給部は、
前記処理容器の壁部に環状に配置され、前記ガスノズルと接続されるガス拡散空間を有し、
複数の前記ガスノズルは、水平方向にガスを噴出する、
請求項1または請求項2に記載のプラズマ処理装置。 The gas supply unit
It has a gas diffusion space that is annularly arranged on the wall of the processing container and is connected to the gas nozzle.
The plurality of gas nozzles eject gas in the horizontal direction.
The plasma processing apparatus according to claim 1 or 2. - 前記ガス供給部は、
前記処理容器の天井部に環状に配置され、前記ガスノズルと接続されるガス拡散空間を有し、
複数の前記ガスノズルは、垂直方向にガスを噴出する、
請求項1乃至請求項3のいずれか1項に記載のプラズマ処理装置。 The gas supply unit
It is arranged in a ring shape on the ceiling of the processing container and has a gas diffusion space connected to the gas nozzle.
The plurality of gas nozzles eject gas in the vertical direction.
The plasma processing apparatus according to any one of claims 1 to 3. - 前記ガス拡散空間は、周方向に分割される、
請求項3または請求項4に記載のプラズマ処理装置。 The gas diffusion space is divided in the circumferential direction.
The plasma processing apparatus according to claim 3 or 4. - 前記流量調整機構は、前記ガスノズルを交換可能に構成される、
請求項1乃至請求項5のいずれか1項に記載のプラズマ処理装置。 The flow rate adjusting mechanism is configured so that the gas nozzle can be replaced.
The plasma processing apparatus according to any one of claims 1 to 5. - 前記流量調整機構は、前記ガス拡散空間と前記ガスノズルとの連通部に設けられるオリフィスである、
請求項3乃至請求項5のいずれか1項に記載のプラズマ処理装置。 The flow rate adjusting mechanism is an orifice provided at a communication portion between the gas diffusion space and the gas nozzle.
The plasma processing apparatus according to any one of claims 3 to 5. - 前記流量調整機構は、前記ガス拡散空間に設けられるオリフィスである、
請求項3乃至請求項5のいずれか1項に記載のプラズマ処理装置。 The flow rate adjusting mechanism is an orifice provided in the gas diffusion space.
The plasma processing apparatus according to any one of claims 3 to 5. - 基板を載置する載置台を収容する処理容器と、周方向に配置される複数のガスノズル、複数の前記ガスノズルの流量を調整する流量調整機構を有し、前記処理容器にガスを供給するガス供給部と、前記処理容器内にプラズマを生成するプラズマ生成部と、を備えるプラズマ処理装置のガス流量調整方法であって、
前記基板にプラズマ処理を行う工程と、
前記プラズマ処理のプロセス結果を測定する工程と、
前記プラズマ処理のプロセス条件、前記プラズマ処理時の前記流量調整機構の情報、前記プロセス結果に基づいて、前記流量調整機構の調整内容を決定する工程と、
前記決定に基づいて、前記流量調整機構を調整する工程と、を有する、
プラズマ処理装置のガス流量調整方法。 It has a processing container that accommodates a mounting table on which a substrate is placed, a plurality of gas nozzles arranged in the circumferential direction, and a flow rate adjusting mechanism that adjusts the flow rates of the plurality of gas nozzles, and supplies gas to the processing container. A method for adjusting the gas flow rate of a plasma processing apparatus including a unit and a plasma generating unit that generates plasma in the processing container.
The process of performing plasma treatment on the substrate and
The step of measuring the process result of the plasma treatment and
A step of determining the adjustment content of the flow rate adjusting mechanism based on the process conditions of the plasma processing, the information of the flow rate adjusting mechanism at the time of the plasma processing, and the process result.
A step of adjusting the flow rate adjusting mechanism based on the determination.
Gas flow rate adjustment method for plasma processing equipment. - 前記流量調整機構を調整する工程は、前記ガスノズルを交換する、
請求項9に記載のプラズマ処理装置のガス流量調整方法。 In the step of adjusting the flow rate adjusting mechanism, the gas nozzle is replaced.
The method for adjusting the gas flow rate of the plasma processing apparatus according to claim 9. - 前記流量調整機構を調整する工程は、ガス拡散空間と前記ガスノズルとの連通部に設けられるオリフィスのオリフィス径を調整する、
請求項9に記載のプラズマ処理装置のガス流量調整方法。 The step of adjusting the flow rate adjusting mechanism adjusts the orifice diameter of the orifice provided in the communication portion between the gas diffusion space and the gas nozzle.
The method for adjusting the gas flow rate of the plasma processing apparatus according to claim 9. - 前記流量調整機構を調整する工程は、ガス拡散空間に設けられるオリフィスのオリフィス径を調整する、
請求項9に記載のプラズマ処理装置のガス流量調整方法。 The step of adjusting the flow rate adjusting mechanism adjusts the orifice diameter of the orifice provided in the gas diffusion space.
The method for adjusting the gas flow rate of the plasma processing apparatus according to claim 9. - 前記プラズマ処理は、成膜処理である、
請求項9乃至請求項12のいずれか1項に記載のプラズマ処理装置のガス流量調整方法。 The plasma treatment is a film forming process.
The method for adjusting the gas flow rate of the plasma processing apparatus according to any one of claims 9 to 12. - 前記流量調整機構の調整内容を決定する工程は、実験計画法に基づいて、前記流量調整機構の調整内容を決定する、
請求項9乃至請求項13のいずれか1項に記載のプラズマ処理装置のガス流量調整方法。 The step of determining the adjustment content of the flow rate adjusting mechanism determines the adjustment content of the flow rate adjusting mechanism based on the design of experiments.
The method for adjusting the gas flow rate of the plasma processing apparatus according to any one of claims 9 to 13. - 前記流量調整機構の調整内容を決定する工程は、機械学習で生成された学習済モデルに基づいて、前記流量調整機構の調整内容を決定する、
請求項9乃至請求項14のいずれか1項に記載のプラズマ処理装置のガス流量調整方法。 The step of determining the adjustment content of the flow rate adjusting mechanism determines the adjustment content of the flow rate adjusting mechanism based on the learned model generated by machine learning.
The method for adjusting the gas flow rate of the plasma processing apparatus according to any one of claims 9 to 14.
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