WO2021153030A1 - Dispositif d'imagerie à semi-conducteur et son procédé de fabrication - Google Patents

Dispositif d'imagerie à semi-conducteur et son procédé de fabrication Download PDF

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Publication number
WO2021153030A1
WO2021153030A1 PCT/JP2020/046121 JP2020046121W WO2021153030A1 WO 2021153030 A1 WO2021153030 A1 WO 2021153030A1 JP 2020046121 W JP2020046121 W JP 2020046121W WO 2021153030 A1 WO2021153030 A1 WO 2021153030A1
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Prior art keywords
substrate
photoelectric conversion
solid
image sensor
groove
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PCT/JP2020/046121
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English (en)
Japanese (ja)
Inventor
千絵 徳満
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ソニーセミコンダクタソリューションズ株式会社
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Priority to JP2021574506A priority Critical patent/JPWO2021153030A1/ja
Publication of WO2021153030A1 publication Critical patent/WO2021153030A1/fr

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith

Definitions

  • the present disclosure relates to a solid-state image sensor and a method for manufacturing the same.
  • the solid-state image sensor reads out the charge obtained by the photoelectric conversion of the photodiode (PD) after temporarily storing it in a charge storage unit such as a floating diffusion unit (FD).
  • a charge storage unit such as a floating diffusion unit (FD).
  • the floating diffusion portion may be arranged at the cross portion of the light-shielding film having a mesh-like planar shape. This makes it possible to shield the floating diffusion portion from light by a light-shielding film.
  • the floating diffusion part may perform photoelectric conversion according to the stray light, and the floating diffusion part may generate a false signal.
  • the present disclosure provides a solid-state image sensor capable of improving the light-shielding property of the charge storage portion and a method for manufacturing the solid-state image sensor.
  • the solid-state imaging device on the first side surface of the present disclosure is provided between a substrate, a plurality of photoelectric conversion units provided in the substrate, and four photoelectric conversion units adjacent to each other in the substrate.
  • a charge accumulating portion and a light-shielding film provided in a groove in the substrate are provided, and the groove includes a first portion provided between two photoelectric conversion portions adjacent to each other in the substrate.
  • the second portion includes a second portion provided around the charge storage unit, and the second portion has a first opening between at least the first photoelectric conversion unit of the four photoelectric conversion units and the charge storage unit. It has a unit, and penetrates the substrate between at least the second photoelectric conversion unit of the four photoelectric conversion units and the charge storage unit. As a result, it is possible to shield many parts of the charge storage portion with a light-shielding film and improve the light-shielding property of the charge storage portion.
  • the second part is further between the third photoelectric conversion part of the four photoelectric conversion parts and the charge storage part, and the first of the four photoelectric conversion parts. 4
  • the substrate may be penetrated between the photoelectric conversion unit and the charge storage unit. This makes it possible to suppress stray light from the second, third, and fourth photoelectric conversion units to the charge storage unit, and further improve the light-shielding property of the charge storage unit.
  • the first portion may have a plate-like shape extending in the vertical direction in the substrate. This makes it possible to suppress stray light between the photoelectric conversion units by the plate-shaped first portion.
  • the second portion may have a tubular shape extending in the vertical direction in the substrate. As a result, the stray light from the photoelectric conversion unit to the charge storage unit can be suppressed by the tubular second portion.
  • the second portion may have a C-shape in a cross section passing through the first opening. This makes it possible to suppress stray light from the photoelectric conversion unit other than the first photoelectric conversion unit to the charge storage unit.
  • the light-shielding film may include a metal layer or a semiconductor layer provided in the groove via an insulating film.
  • the function of the element separation insulating film can be realized by the insulating film, and the function of the light-shielding film can be realized by the metal layer or the semiconductor layer.
  • the second portion further has a second opening between the third photoelectric conversion section of the four photoelectric conversion sections and the charge storage section, and the four photoelectric conversion sections are described.
  • the substrate may be penetrated between the fourth photoelectric conversion unit of the photoelectric conversion unit and the charge storage unit. This makes it possible, for example, to improve the light-shielding property of the charge storage unit while preferably arranging the circuit element for the first photoelectric conversion unit in the vicinity of the third photoelectric conversion unit.
  • the third photoelectric conversion unit may be provided on the opposite side of the first photoelectric conversion unit with respect to the charge storage unit.
  • the circuit element for the first photoelectric conversion unit can be suitably arranged on the opposite side of the first photoelectric conversion unit with respect to the charge storage unit.
  • the reset transistor for the first photoelectric conversion unit may be provided on the third photoelectric conversion unit side with respect to the charge storage unit. This makes it possible to suitably arrange the reset transistor for the first photoelectric conversion unit, for example.
  • the first portion may have a third opening between the two photoelectric conversion portions. This makes it possible to suitably arrange the circuit element in the vicinity of the third opening, for example.
  • the solid-state image sensor on the first side surface may be further provided in the substrate near the third opening, and may be provided with a charge storage unit common to the two photoelectric conversion units. This makes it possible to preferably arrange the charge storage unit.
  • the solid-state image sensor on the first side surface may further include a moth-eye structure provided on the upper surface of the substrate on the photoelectric conversion unit. This makes it possible to suppress stray light caused by the moth-eye structure by the light-shielding film while enjoying the merits of the moth-eye structure.
  • the first opening may be provided on the opposite side of the center of the pixel array region of the solid-state image sensor with respect to the charge storage portion. Since a large amount of light is generally incident on each photoelectric conversion unit from the center of the pixel array region, it is possible to effectively suppress that the first opening portion causes stray light.
  • the pixel array region includes a first region, a second region provided on the opposite side of the first region with respect to the center of the pixel array region, and the first region.
  • the third region provided between the second region and the fourth region provided on the opposite side of the third region with respect to the center of the pixel array region are included, and the said in the second region.
  • the first opening is provided on the opposite side of the first opening in the first region with respect to the center of the pixel array region, and the first opening in the fourth region is the pixel array. It may be provided on the opposite side of the first opening in the third region with respect to the center of the region. This makes it possible to provide the first opening at a suitable position in each of the first to fourth regions.
  • a plurality of photoelectric conversion units are formed in a substrate, and a charge storage portion is formed between four photoelectric conversion units adjacent to each other in the substrate.
  • a first which includes forming a groove in the substrate and forming a light-shielding film in the groove, the groove is provided between two photoelectric conversion portions adjacent to each other in the substrate.
  • a portion and a second portion provided around the charge storage portion are included, and the second portion is located between at least the first photoelectric conversion unit of the four photoelectric conversion units and the charge storage unit. It has a first opening and is formed so as to penetrate the substrate between at least the second photoelectric conversion section of the four photoelectric conversion sections and the charge storage section.
  • the second portion is further between the third photoelectric conversion unit of the four photoelectric conversion units and the charge storage unit, and the second of the four photoelectric conversion units.
  • the photoelectric conversion unit and the charge storage unit may be formed so as to penetrate the substrate. This makes it possible to suppress stray light from the second, third, and fourth photoelectric conversion units to the charge storage unit, and further improve the light-shielding property of the charge storage unit.
  • the second portion further has a second opening between the third photoelectric conversion section of the four photoelectric conversion sections and the charge storage section, and the four photoelectric conversion sections are described. It may be formed so as to penetrate the substrate between the fourth photoelectric conversion unit of the photoelectric conversion unit and the charge storage unit. This makes it possible, for example, to improve the light-shielding property of the charge storage unit while arranging the circuit element for the first photoelectric conversion unit in the vicinity of the third photoelectric conversion unit.
  • the first portion may be formed so as to have a third opening between the two photoelectric conversion portions. This makes it possible to arrange the circuit element in the vicinity of the third opening, for example.
  • the method for manufacturing the solid-state image sensor on the second side surface may further include forming a moth-eye structure on the upper surface of the substrate on the photoelectric conversion unit. This makes it possible to suppress stray light caused by the moth-eye structure by the light-shielding film while enjoying the merits of the moth-eye structure.
  • the first opening may be formed on the opposite side of the center of the pixel array region of the solid-state image sensor with respect to the charge storage portion. Since a large amount of light is generally incident on each photoelectric conversion unit from the center of the pixel array region, it is possible to effectively suppress that the first opening portion causes stray light.
  • the groove may be formed by forming a part of the groove from the front surface of the substrate and forming another part of the groove from the back surface of the substrate. This makes it possible to form a groove by forming an opening (a part of the groove) shallower than the thickness of the substrate a plurality of times.
  • the groove may be formed by processing the substrate from only one of the front surface and the back surface of the substrate. This makes it possible to form a groove while reducing the number of times the substrate is processed.
  • FIG. 1 is a block diagram showing a configuration of a solid-state image sensor according to the first embodiment.
  • the solid-state image sensor of FIG. 1 is a CMOS (Complementary Metal Oxide Semiconductor) type solid-state image sensor, and has a pixel array region 2 having a plurality of pixels 1, a control circuit 3, a vertical drive circuit 4, and a plurality of column signals. It includes a processing circuit 5, a horizontal drive circuit 6, an output circuit 7, a plurality of vertical signal lines 8, and a horizontal signal line 9.
  • CMOS Complementary Metal Oxide Semiconductor
  • Each pixel 1 includes a photodiode that functions as a photoelectric conversion unit and a plurality of pixel transistors.
  • pixel transistors are MOS transistors such as transfer transistors, reset transistors, amplification transistors, and selection transistors.
  • the pixel array area 2 has a plurality of pixels 1 arranged in a two-dimensional array.
  • the pixel array region 2 is an effective pixel region that receives light and performs photoelectric conversion, amplifies and outputs the signal charge generated by the photoelectric conversion, and black for outputting optical black that serves as a reference for the black level. It includes a reference pixel area (not shown). Generally, the black reference pixel region is arranged on the outer peripheral portion of the effective pixel region.
  • the control circuit 3 generates various signals that serve as reference for the operation of the vertical drive circuit 4, the column signal processing circuit 5, the horizontal drive circuit 6, etc., based on the vertical synchronization signal, the horizontal synchronization signal, and the master clock.
  • the signal generated by the control circuit 3 is, for example, a clock signal or a control signal, and is input to the vertical drive circuit 4, the column signal processing circuit 5, the horizontal drive circuit 6, and the like.
  • the vertical drive circuit 4 includes, for example, a shift register, and sequentially selects and scans each pixel 1 in the pixel array area 2 in the vertical direction in row units.
  • the vertical drive circuit 4 further supplies a pixel signal based on the signal charge generated by each pixel 1 according to the amount of light received to the column signal processing circuit 5 through the vertical signal line 8.
  • the column signal processing circuit 5 is arranged for each column of the pixel 1 in the pixel array area 2, for example, and performs signal processing of the signal output from the pixel 1 for one row based on the signal from the black reference pixel area. Do it for each row. Examples of this signal processing are noise removal and signal amplification.
  • a horizontal selection switch (not shown) is provided between the output stage of the column signal processing circuit 5 and the horizontal signal line 9.
  • the horizontal drive circuit 6 includes, for example, a shift register, sequentially outputs each of the column signal processing circuits 5 by sequentially outputting horizontal scanning pulses, and selects pixel signals from each of the column signal processing circuits 5 in order. Output to 9.
  • the output circuit 7 performs signal processing on the signals sequentially supplied from each of the column signal processing circuits 5 through the horizontal signal line 9, and outputs the processed signal.
  • FIG. 2 is a cross-sectional view showing the structure of the solid-state image sensor of the first embodiment.
  • FIG. 2 shows nine pixels 1 included in the pixel array region 2 of FIG. 1, and more specifically, shows one pixel 1 and eight pixels 1 adjacent thereto.
  • FIG. 2 shows the X-axis, Y-axis, and Z-axis that are perpendicular to each other.
  • the X and Y directions correspond to the horizontal direction (horizontal direction), and the Z direction corresponds to the vertical direction (vertical direction). Further, the + Z direction corresponds to the upward direction, and the ⁇ Z direction corresponds to the downward direction.
  • the ⁇ Z direction may or may not exactly coincide with the direction of gravity.
  • FIG. 2 further shows an X'axis tilted with respect to the X axis and a Y'axis tilted with respect to the Y axis.
  • the X'direction and the Y'direction correspond to the lateral direction (horizontal direction) as well as the X direction and the Y direction.
  • FIG. 2 further shows an AA'line parallel to the X'direction and a BB' line parallel to the Y'direction.
  • FIG. 3 is a vertical cross-sectional view showing the structure of the solid-state image sensor of the first embodiment.
  • FIG. 4 is another vertical sectional view showing the structure of the solid-state image sensor of the first embodiment.
  • FIG. 3 shows a cross section (X'Z cross section) along the AA'line shown in FIG. 2
  • FIG. 4 shows a cross section (Y'Z cross section) along the BB' line shown in FIG. Shown.
  • FIG. 2 shows a cross section (XY cross section) along the AA'line shown in FIG. 3 and the BB' line shown in FIG.
  • FIG. 2 shows not only the components in the XY cross section but also some components lower than the XY cross section for the sake of clarity.
  • the solid-state image sensor of the present embodiment includes a plurality of photodiode PDs, a plurality of stray diffuser FDs, a plurality of transfer transistors TR, and a plurality of reset transistors RST.
  • photodiode PDs are examples of the photoelectric conversion unit of the present disclosure
  • floating diffusion units FD are examples of the charge storage unit of the present disclosure.
  • the solid-state image sensor of the present embodiment further includes a support substrate 11, a plurality of wiring layers 12, 13, 14 and an interlayer insulating film 15, a plurality of contact plugs 16, and a gate insulating film 17 included in each transfer transistor TR. , A gate electrode 18, and a side wall insulating film 19.
  • the solid-state image sensor of the present embodiment further includes a substrate 21, an n-type semiconductor region 22 and a p-type semiconductor region 23 included in each photodiode PD, and an n + type semiconductor region 24 included in each floating diffusion unit FD. ing.
  • the n-type semiconductor region 22, the p-type semiconductor region 23, and the n + type semiconductor region 24 are provided in the substrate 21.
  • the solid-state imaging device of the present embodiment further includes a groove 31 provided in the substrate 21, an element separation portion 32 provided in the groove 31, an element separation insulating film 33 and a light-shielding film included in the element separation portion 32 and the like. 34, a flattening film 35, a color filter layer 36, and an on-chip lens 37 are provided.
  • the groove 31 includes a plurality of linear grooves 31a which is an example of the first part of the present disclosure, and a plurality of annular grooves 31b which is an example of the second part of the present disclosure.
  • the element separating portion 32 includes a plurality of linear portions 32a and a plurality of annular portions 32b.
  • the light-shielding film 34 includes an internal light-shielding film 34a provided in the groove 31 and an external light-shielding film 34b provided outside the groove 31.
  • the substrate 21 is, for example, a semiconductor substrate such as a silicon (Si) substrate.
  • the surface of the substrate 21 in the ⁇ Z direction is the surface S1 of the substrate 21, and the surface of the substrate 21 in the + Z direction is the back surface S2 of the substrate 21. Since the solid-state image sensor of this embodiment is a back-illuminated type, the back surface S2 of the substrate 21 is the light incident surface of the substrate 21.
  • the thickness of the substrate 21 is, for example, 1 to 6 ⁇ m.
  • the substrate 21 may be, for example, a laminated substrate including a semiconductor substrate and a semiconductor layer formed on the front surface or the back surface of the semiconductor substrate.
  • the substrate 21 includes an n-type semiconductor region 22 and a p-type semiconductor region 23 included in each photodiode PD, and an n + type semiconductor region 24 included in each stray diffusion unit FD. As shown in FIGS. 2 to 4, the n-type semiconductor region 22 is located approximately in the center of each photodiode PD, and the p-type semiconductor region 23 is located approximately around the n-type semiconductor region 22. The n + type semiconductor region 24 is located near the surface S1 of the substrate 21.
  • the p-type semiconductor region and the n-type semiconductor region in the substrate 21 of the present embodiment may be interchanged with each other.
  • the n-type semiconductor region 22, the p-type semiconductor region 23, and the n + -type semiconductor region 24 may be changed to the p-type semiconductor region, the n-type semiconductor region, and the p + -type semiconductor region, respectively.
  • Each photodiode PD includes an n-type semiconductor region 22 and a p-type semiconductor region 23 forming a pn junction, and functions as a photoelectric conversion unit that converts received light into electric charges to generate signal charges. ..
  • FIG. 2 shows nine photodiode PDs provided for nine pixels 1, and more specifically, one photodiode PD and eight photodiode PDs adjacent thereto. As shown in FIG. 2, the photodiode PDs of the present embodiment are arranged in a two-dimensional array in the shape of a square lattice.
  • Each floating diffusion unit FD includes an n + type semiconductor region 24, and includes a charge storage unit that stores signal charges generated by the corresponding photodiode PD and a charge voltage that converts this signal charge into a voltage signal and outputs it. Functions as a conversion unit.
  • FIG. 2 shows four floating diffusion portions FD. As shown in FIG. 2, the floating diffusion unit FD of the present embodiment is arranged in a two-dimensional array in the shape of a square lattice.
  • Each floating diffusion unit FD of the present embodiment is provided between four photodiode PDs adjacent to each other.
  • the floating diffusion portion FD on the upper left of FIG. 2 is provided between the four photodiode PDs on the upper left, left, top, and center of FIG.
  • This floating diffusion unit FD is used as a charge storage unit for the photodiode PD in the center of FIG. 2, as will be described later.
  • each floating diffusion unit FD in FIG. 2 is used as a charge storage unit for the photodiode PD at the lower right.
  • the floating diffusion portion FD of the present embodiment is accurately arranged at a position lower than the AA'line and the BB' line, but the explanation is easy to understand. It is illustrated in FIG.
  • Each transfer transistor TR is provided on the surface S1 of the substrate 21, and transfers a signal charge from the corresponding photodiode PD to the corresponding floating diffusion unit FD.
  • the transfer transistor TR shown in FIG. 3 transfers a signal charge from the photodiode PD shown in FIG. 3 to the floating diffusion unit FD on the left side thereof.
  • the transfer transistor TR is arranged between the photodiode PD in the center of FIG. 2 and the floating diffusion portion FD in the upper left of the photodiode PD.
  • the transfer transistor TR of the present embodiment is accurately arranged at a position lower than the AA'line and the BB' line, but is shown in FIG. 2 for the sake of clarity.
  • Each reset transistor RST is provided on the surface S1 of the substrate 21 like the transfer transistor TR, and initializes the corresponding floating diffusion unit FD, that is, the potential of the corresponding floating diffusion unit FD is set to the power supply potential (VDD potential). Reset to.
  • the floating diffusion unit FD on the upper left of FIG. 2 is initialized by the reset transistor RST on the upper left.
  • the reset transistor RST of the present embodiment is accurately arranged at a position lower than the AA'line and the BB' line, but is shown in FIG. 2 for the sake of clarity.
  • the signal charge generated by the photodiode PD in the center of FIG. 2 is accumulated in the floating diffusion portion FD in the upper left of FIG. 2 by the transfer transistor TR in the upper left of FIG.
  • the floating diffusion unit FD is initialized by the reset transistor RST on the upper left of FIG.
  • the support substrate 11 is provided below the substrate 21 via an interlayer insulating film 15.
  • the support substrate 11 is, for example, a semiconductor substrate such as a silicon substrate.
  • the support substrate 11 is provided to ensure the strength of the substrate 21.
  • the interlayer insulating film 15 is, for example, an insulating film such as a silicon oxide film.
  • the wiring layers 12 to 14 are provided in the interlayer insulating film 15 to form a multi-layer wiring structure.
  • the multi-layer wiring structure of the present embodiment includes three wiring layers 12 to 14, but may include four or more wiring layers.
  • Each of the wiring layers 12 to 14 includes various wirings, and pixel transistors such as the transfer transistor TR and the reset transistor RST are driven by using these wirings.
  • the wiring layers 12 to 14 include, for example, a metal layer such as a tungsten (W) layer, a copper (Cu) layer, and an aluminum (Al) layer.
  • the wiring layers 12 to 14 may include wiring M that functions as a reflective film or a light-shielding film.
  • the contact plug 16 is formed on the wiring layer 14 in the interlayer insulating film 15.
  • the contact plug 16 is in contact with, for example, the lower surface of the n + type semiconductor region 24 of the floating diffusion portion FD and the lower surface of the gate electrode 18 of the transfer transistor TR.
  • the gate insulating film 17, the gate electrode 18, and the side wall insulating film 19 of each transfer transistor TR are provided on the surface S1 of the substrate 21 and are covered with the interlayer insulating film 15. Specifically, the gate insulating film 17 and the gate electrode 18 are sequentially formed on the surface S1 of the substrate 21, and the side wall insulating film 19 is formed on the side surface of the gate electrode 18.
  • the gate electrode 18 is provided under the p-type semiconductor region 23 between the n-type semiconductor region 22 and the n + -type semiconductor region 24 via the gate insulating film 17.
  • the groove 31 is provided in the substrate 21 and extends in the substrate 21 in the vertical direction (Z direction). As shown in FIG. 2, the groove 31 of the present embodiment has a substantially mesh-like planar shape. More specifically, the groove 31 of the present embodiment includes a plurality of linear grooves 31a and a plurality of annular grooves 31b.
  • each linear groove 31a has a linear planar shape extending in the X direction or the Y direction. Since each linear groove 31a extends in the Z direction, it has a plate-like shape parallel to the XZ plane or the YZ plane.
  • Each linear groove 31a of the present embodiment penetrates the substrate 21 and extends from the back surface S2 of the substrate 21 to the front surface S1.
  • Each linear groove 31a is provided between two photodiode PDs adjacent to each other.
  • the left linear portion 31a of the central photodiode PD in FIG. 2 is provided between the two central and left photodiode PDs in FIG.
  • Each annular groove 31b has a tubular shape extending in the Z direction, but has an opening E1 in a part of the tubular shape.
  • the opening E1 is a portion of the substrate 21 in which the groove 31 is not formed. Therefore, the inner substrate portion of each annular groove 31b and the outer substrate portion of each annular groove 31b are connected to each other by the substrate portion in the opening E1.
  • each annular groove 31b of the present embodiment includes a portion that penetrates the substrate 21 and a portion that does not penetrate the substrate 21. The portion that does not penetrate the substrate 21 extends from the back surface S2 of the substrate 21, but does not reach the front surface S1 of the substrate 21.
  • the opening E1 of the present embodiment is located below the portion that does not penetrate the substrate 21.
  • the opening E1 is an example of the first opening of the present disclosure.
  • Each annular groove 31b of the present embodiment has an O-shaped (annular) planar shape at the upper portion thereof and a C-shaped planar shape at the lower portion thereof.
  • FIG. 2 shows the C-shaped planar shape of each annular groove 31b.
  • each annular groove 31b has a C-shape in a cross section (XY cross section) passing through the opening E1.
  • Each annular groove 31b is provided between the four linear grooves 31a and is provided around the corresponding floating diffusion portion FD.
  • the element separation unit 32 includes an element separation insulating film 33 and a light-shielding film 34, which are sequentially formed in the groove 31.
  • the element separation insulating film 33 is formed on the side surface and the bottom surface of the groove 31.
  • the light-shielding film 34 is embedded in the groove 31 via the element separation insulating film 33.
  • the element separating portion 32 includes a plurality of linear portions 32a formed in the plurality of linear grooves 31a, and a plurality of annular portions 32b formed in the plurality of annular grooves 31b.
  • Each linear portion 32a includes an element separation insulating film 33 and a light shielding film 34 in this order.
  • each annular portion 32b includes an element separation insulating film 33 and a light shielding film 34 in this order.
  • the element separation insulating film 33 functions as an insulating film for electrically separating the pixels 1 (for example, the photodiode PDs) from each other.
  • the element separation insulating film 33 is, for example, a silicon oxide film.
  • the element separation insulating film 33 may be a transparent insulating film or an insulating film having a light-shielding property, but the element separation insulating film 33 in the case of having a light-shielding property also functions as a light-shielding film.
  • the element separation insulating film 33 of the present embodiment is a transparent insulating film, and is formed not only in the groove 31 but also on the back surface S2 of the substrate 21 on each photodiode PD (FIGS. 3 and 4). reference).
  • the element separation insulating film 33 may include a fixed charge film having a negative fixed charge.
  • the light-shielding film 34 is a film that blocks light, and is provided to prevent light from entering from one place to another in the solid-state image sensor.
  • the light-shielding film 34 is, for example, a metal layer such as a tungsten layer or a compound semiconductor layer having a chalcopyrite structure having a high extinction coefficient.
  • the light-shielding film 34 in the linear groove 31a can suppress light from entering another photodiode PD from one photodiode PD, and the light-shielding film 34 in the annular groove 31b is from the photodiode PD. It is possible to suppress the invasion of light into the floating diffusion portion FD.
  • the light-shielding film 34 of the present embodiment includes not only the internal light-shielding film 34a provided in the groove 31, but also the external light-shielding film 34b provided outside the groove 31 (see FIGS. 3 and 4).
  • the external light-shielding film 34b is provided on each annular groove 31a, and can suppress light from entering the floating diffusion portion FD from the flattening film 35.
  • the light-shielding film 34 may be an insulating film.
  • the flattening film 35 is formed so as to cover the back surface S2 of the substrate 21, whereby the surface of the substrate 21 on the back surface S2 is flat.
  • the flattening film 35 is, for example, an organic film such as a resin film.
  • the flattening film 35 may be an insulating film other than the organic film, and in this case, the upper surface of the insulating film may be flattened by CMP (Chemical Mechanical Polishing).
  • the color filter layer 36 is formed on the flattening film 35 for each pixel 1.
  • a color filter layer 36 for red (R), green (G), or blue (B) is arranged above the photodiode PD of pixel 1 in red, green, or blue.
  • the color filter layer 36 for infrared light may be arranged above the photodiode PD of the infrared light pixel 1.
  • the color filter layer 36 has a property of being able to transmit light having a predetermined wavelength, and the light transmitted through the color filter layer 36 is incident on the photodiode PD via the flattening film 35 and the element separation insulating film 33. ..
  • the on-chip lens 37 is formed on the color filter layer 36 for each pixel 1.
  • the on-chip lens 37 has a property of condensing the incident light, and the light collected by the on-chip lens 37 passes through the color filter layer 36, the flattening film 35, and the element separation insulating film 33. Then it enters the photodiode PD.
  • the floating diffusion portion FD in the upper left of FIG. 2 is provided between the four photodiode PDs in the upper left, left, top, and center. Further, the signal charge generated by the photodiode PD in the center of FIG. 2 is accumulated in the floating diffusion portion FD on the upper left.
  • the annular groove 31b on the upper left of FIG. 2 has an opening E1 only between the central photodiode PD and the floating diffusion portion FD, and the upper left, left, and upper photodiode PD and the floating diffusion portion thereof. It does not have an opening E1 with the FD. Thereby, the signal charge can be transferred from the central photodiode PD to the floating diffusion portion FD via the opening E1, and the stray light from the other photodiode PD to the floating diffusion portion FD can be suppressed.
  • the photodiode PD in the center is an example of the first photoelectric conversion unit of the present disclosure.
  • the upper left, left, and upper photodiode PDs are examples of the second, third, and fourth photoelectric conversion units of the present disclosure.
  • the upper left annular groove 31b in FIG. 2 penetrates the substrate 21 between the upper left, left, and upper photodiode PDs and the upper left floating diffusion portion FD. Therefore, the stray light from these photodiodes PD to the floating diffusion portion FD can be effectively suppressed by the light-shielding film 34 in the annular groove 31b.
  • the annular groove 31b on the upper left of FIG. 2 is formed so that the opening E1 remains between the photodiode PD in the center and the floating diffusion portion FD on the upper left. Therefore, the signal charge can be easily transferred from the photodiode PD to the floating diffusion portion FD via the opening E1.
  • the reason is that if the light-shielding film 34 exists between the photodiode PD and the floating diffusion portion FD, it becomes difficult to transfer the signal charge.
  • by providing an annular groove 31b that does not penetrate the substrate 21 between the central photodiode PD and the upper left floating diffusion portion FD stray light from the photodiode PD to the floating diffusion portion FD is suppressed to some extent. It becomes possible.
  • the annular groove 31b on the upper left of FIG. 2 is between the photodiode PD on the upper left and the floating diffusion portion FD, between the photodiode PD on the left and the floating diffusion portion FD, and the photodiode PD above. It is not necessary to penetrate the substrate 21 at all between the floating diffusion portion FD.
  • the annular groove 31b on the upper left of FIG. 2 may also have an opening between the photodiode PD on the upper left and the floating diffusion portion FD. Such an opening will be described in the second embodiment.
  • groove 31 can be similarly applied to the annular groove 31b other than the annular groove 31b on the upper left of FIG.
  • FIG. 5 and 6 are vertical cross-sectional views showing a method of manufacturing the solid-state image sensor of the first embodiment.
  • a to B in FIG. 5 show a vertical cross section corresponding to FIG.
  • the n-type semiconductor region 22, the p-type semiconductor region 23, and the n + type semiconductor region 24, the gate insulating film 17 of the transfer transistor TR, and the gate are formed in the substrate 21 or on the substrate 21.
  • the electrode 18 and the side wall insulating film 19 are formed.
  • the gate insulating film of the reset transistor RST, the gate electrode, and the side wall insulating film are also formed.
  • the photodiode PD, the floating diffusion layer FD, and the pixel transistor are formed.
  • the photodiode PD and the floating diffusion layer FD are arranged in a two-dimensional array as shown in FIG.
  • the transfer transistor TR and the reset transistor RST are also arranged in the layout shown in FIG.
  • a contact plug 16 As shown in A of FIG. 5, a contact plug 16, an interlayer insulating film 15, and wiring layers 12 to 14 are formed on the substrate 21.
  • the step A in FIG. 5 is executed with the front surface S1 of the substrate 21 facing up and the back surface S2 of the substrate 21 facing down.
  • FIG. 5B shows a state in which the front surface S1 of the substrate 21 is directed downward and the back surface S2 of the substrate 21 is directed upward.
  • a groove 31 is formed in the substrate 21 by etching from the back surface S2.
  • the groove 31 is formed so as to include the above-mentioned linear groove 31a (not shown) and the annular groove 31b.
  • the linear groove 31a of the present embodiment is formed so as to penetrate the substrate 21.
  • the annular groove 31b of the present embodiment is formed so as to include a portion that penetrates the substrate 21 and a portion that does not penetrate the substrate 21.
  • the opening E1 of the annular groove 31b is formed under the portion that does not penetrate the substrate 21.
  • the groove 31 is formed in a layout as shown in FIGS. 2 to 4. Details of the groove 31 forming process will be described later.
  • the element separation insulating film 33 and the light-shielding film 34 are sequentially formed on the back surface S2 of the substrate 21.
  • the element separation insulating film 33 is formed on the side surface and the bottom surface of the groove 31 and on the photodiode PD.
  • the light-shielding film 34 is embedded in the groove 31 via the element separation insulating film 33, and is formed on the photodiode PD via the element separation insulating film 33.
  • the element separating portion 32 is formed in the groove 31. More specifically, the linear portion 32a is formed in the linear groove 31a (not shown), and the annular portion 32b is formed in the annular groove 31b.
  • the light-shielding film 34 outside the groove 31 is processed by etching.
  • the light-shielding film 34 is processed so as to include the internal light-shielding film 34a inside the groove 31 and the external light-shielding film 34b outside the groove 31.
  • the external light-shielding film 34b is formed on the annular groove 31b.
  • the flattening film 36, the color filter layer 37, and the on-chip lens 38 are sequentially formed on the photodiode PD via the element separation insulating film 33. In this way, the solid-state image sensor of the present embodiment is manufactured.
  • a to 12 of FIG. 7 show a vertical cross section corresponding to B of FIG. 5 (or B of FIG. 6). However, for the sake of clarity, the support substrate 11, the wiring layers 12 to 14, the interlayer insulating film 15, the contact plug 16, the gate insulating film 17, the gate electrode 18, the side wall insulating film 19, the n-type semiconductor region 22, and the p-type.
  • the semiconductor region 23 and the n + type semiconductor region 24 are not shown.
  • FIG. 7 and 8 are vertical cross-sectional views showing a first example of a method for forming the groove 31.
  • a part (upper part) of the groove 31 is formed in the substrate 21 by etching from the back surface S2 of the substrate 21 (A in FIG. 7). Specifically, each of the linear groove 31a and the annular groove 31b is formed up to the position of the height H.
  • each linear groove 31a is processed so as to penetrate the substrate 21.
  • each annular groove 31b is processed so as to include a portion that penetrates the substrate 21 and a portion that does not penetrate the substrate 21.
  • the opening E1 of the annular groove 31b is formed under the portion that does not penetrate the substrate 21. In this way, the groove 31 is formed.
  • the steps A and B in FIG. 6 are then executed.
  • the element separating portion 32 is formed in the groove 31 (A in FIG. 8).
  • the element separation portion 32 is formed so as to include the element separation insulating film 33 and the light shielding film 34 in this order.
  • the lower portion of the groove 31 is formed in the substrate 21 by etching from the front surface S1 of the substrate 21, and then the upper portion of the groove 31 is formed in the substrate 21 by etching from the back surface S2 of the substrate 21. It may be formed. That is, the step B of FIG. 7 may be executed, and then the step A of FIG. 7 may be executed. In this case, in the step B of FIG. 7, the support substrate 11, the wiring layers 12 to 14, the interlayer insulating film 15, the contact plug 16, the gate insulating film 17, the gate electrode 18, and the side wall insulating film are formed on the surface S1 of the substrate 21. It is executed before forming 19. On the other hand, the step A in FIG. 7 may be executed before forming these on the surface S1 of the substrate 21, or may be executed after forming these on the surface S1 of the substrate 21.
  • the element separation unit 32 may be formed as follows. First, the lower portion of the groove 31 is formed in the substrate 21 by etching from the surface S1 of the substrate 21, and the element separation insulating film 33'and the light-shielding film 34' are formed in this order in the lower portion of the groove 31 (FIG. 8). B). Next, the upper portion of the groove 31 is formed in the substrate 21 by etching from the back surface S2 of the substrate 21, and the element separation insulating film 33 and the light-shielding film 34 are sequentially formed in the upper portion of the groove 31 (B in FIG. 8). ).
  • the element separation portion 32 is formed in the groove 31 so as to include the element separation insulating films 33, 33'and the light shielding films 34, 34' in order.
  • the materials of the element separation insulating film 33'and the light shielding film 34' are the same as the materials of the element separation insulating film 33 and the light shielding film 34, respectively.
  • 9 and 10 are vertical cross-sectional views showing a second example of the method of forming the groove 31.
  • a groove 31c as a part of the groove 31 is formed in the substrate 21 by etching from the surface S1 of the substrate 21 (A in FIG. 9).
  • the element separation insulating film 38 is formed in the groove 31c (A in FIG. 9).
  • the element separation portion is formed in the groove 31c.
  • This element separation unit is used, for example, to electrically separate the transistors on the surface S1 of the substrate 21.
  • the element separation insulating film 38 may be a transparent insulating film or an insulating film having a light-shielding property, but here, it is desirable to use an insulating film having a light-shielding property.
  • the element separation insulating film 38 when there is a light-shielding property also functions as a light-shielding film.
  • the groove 31c and the element separation insulating film 38 are formed on the surface S1 of the substrate 21 with the support substrate 11, the wiring layers 12 to 14, the interlayer insulating film 15, the contact plug 16, the gate insulating film 17, the gate electrode 18, and the side wall insulation. It is formed before the film 19 is formed.
  • each of the linear groove 31a and the annular groove 31b is formed up to the position of the height H.
  • each linear groove 31a is processed so as to penetrate the substrate 21 alone or to penetrate the substrate 21 together with the groove 31c. That is, the linear groove 31a above the groove 31c (element separation insulating film 38) is formed so as to reach the groove 21c (element separation insulating film 38).
  • each annular groove 31b is processed so as to include a portion that penetrates the substrate 21 alone or together with the groove 31c, and a portion that does not penetrate the substrate 21. In the step B of FIG.
  • the steps A and B in FIG. 6 are then executed.
  • the element separating portion 32 is formed in the groove 31 (linear groove 31a and annular groove 31b).
  • the element separation portion 32 is formed so as to include the element separation insulating film 33 and the light shielding film 34 in this order.
  • the element separating portion in the groove 31c is also a part of the element separating portion 32.
  • the element separation portion in the groove 31c may be formed so as to include the element separation insulating film 38 and the light shielding film 39 in this order (A in FIG. 10).
  • the materials of the element separation insulating film 38 and the light-shielding film 39 may be the same as the materials of the element separation insulating film 33 and the light-shielding film 34, respectively.
  • the bottom surface of the groove 31c may be formed up to the position of the above-mentioned height H (B in FIG. 10).
  • the step A in FIG. 9 may be executed thereafter, and the step B in FIG. 9 may be omitted (B in FIG. 10).
  • the groove 31 including the linear groove 31a, the annular groove 31b, and the groove 31c is formed.
  • the element separation portion in the groove 31c in this case may be formed by the method of A in FIG.
  • the groove 31 of this example may be formed by the following procedure. First, a groove 31c is formed in the substrate 21 by etching from the surface S1 of the substrate 21. The groove 31c is formed from the surface S1 of the substrate 21 in the same manner as in the step A of FIG. Next, a part (lower part) of the groove 31 is formed in the substrate 21 by etching from the surface S1 of the substrate 21. The lower portion of the groove 31 is formed from the surface S1 of the substrate 21, unlike the step B in FIG. Next, an element separation insulating film 33'and a light-shielding film 34' similar to the step B in FIG.
  • the element separation insulating film 33 and the light-shielding film 34 are sequentially formed in the upper portion of the groove 31.
  • FIG. 11 is a vertical cross-sectional view showing a third example of the method for forming the groove 31.
  • a part of the groove 31 is formed in the substrate 21 by etching from the back surface S2 of the substrate 21 (A in FIG. 11). Specifically, the entire linear groove 31a and the portion of each annular groove 31b that penetrates the substrate 21 are formed. In A of FIG. 11, the entire linear groove 31a and the portion of each annular groove 31b are formed so as to penetrate the substrate 31.
  • the remaining portion of the groove 31 is formed in the substrate 21 by etching from the back surface S2 of the substrate 21 (B in FIG. 11). Specifically, a portion of each annular groove 31b that does not penetrate the substrate 21 is formed. In B of FIG. 11, the portion of each annular groove 31b is formed up to the position of height H. As a result, the opening E1 of the annular groove 31b is formed under the portion that does not penetrate the substrate 21. In this way, the groove 31 is formed.
  • the steps A and B in FIG. 6 are then executed.
  • the element separating portion 32 is formed in the groove 31.
  • the element separation portion 32 is formed so as to include the element separation insulating film 33 and the light shielding film 34 in this order.
  • a part of the groove 31 may be formed in the substrate 21 by etching from the surface S1 of the substrate 21.
  • the support substrate 11, the wiring layers 12 to 14, the interlayer insulating film 15, the contact plug 16, the gate insulating film 17, the gate electrode 18, and the side wall insulating film are formed on the surface S1 of the substrate 21. It is executed before forming 19.
  • the step B in FIG. 11 may be executed before forming these on the surface S1 of the substrate 21, or may be executed after forming these on the surface S1 of the substrate 21.
  • step B in FIG. 11 may be executed, and then the step A in FIG. 11 may be executed.
  • FIG. 12 is a vertical cross-sectional view showing a fourth example of the method for forming the groove 31.
  • a groove 31c as a part of the groove 31 is formed in the substrate 21 by etching from the surface S1 of the substrate 21 (A in FIG. 12).
  • the element separation insulating film 38 is formed in the groove 31c (A in FIG. 12).
  • the element separation portion is formed in the groove 31c.
  • This element separation unit is used, for example, to electrically separate the transistors on the surface S1 of the substrate 21.
  • the element separation insulating film 38 may be a transparent insulating film or an insulating film having a light-shielding property, but here, it is desirable to use an insulating film having a light-shielding property.
  • the element separation insulating film 38 when there is a light-shielding property also functions as a light-shielding film.
  • the groove 31c and the element separation insulating film 38 are formed on the surface S1 of the substrate 21 with the support substrate 11, the wiring layers 12 to 14, the interlayer insulating film 15, the contact plug 16, the gate insulating film 17, the gate electrode 18, and the side wall insulation. It is formed before the film 19 is formed.
  • a part of the groove 31 is formed in the substrate 21 by etching from the back surface S2 of the substrate 21 (A in FIG. 12). Specifically, the entire linear groove 31a and the portion of each annular groove 31b that penetrates the substrate 21 are formed. In A of FIG. 12, the entire linear groove 31a and the portion of each annular groove 31b are formed so as to penetrate the substrate 31 alone or the substrate 31 together with the groove 31c.
  • the remaining portion of the groove 31 is formed in the substrate 21 by etching from the back surface S2 of the substrate 21 (B in FIG. 12). Specifically, a portion of each annular groove 31b that does not penetrate the substrate 21 is formed. In B of FIG. 12, the portion of each annular groove 31b is formed up to the position of height H. As a result, the opening E1 of the annular groove 31b is formed under the portion that does not penetrate the substrate 21. In this way, the groove 31 including the linear groove 31a, the annular groove 31b, and the groove 31c is formed.
  • the steps A and B in FIG. 6 are then executed.
  • the element separating portion 32 is formed in the groove 31 (linear groove 31a and annular groove 31b).
  • the element separation portion 32 is formed so as to include the element separation insulating film 33 and the light shielding film 34 in this order.
  • the element separating portion in the groove 31c is also a part of the element separating portion 32.
  • step B in FIG. 12 may be executed, and then the step A in FIG. 12 may be executed.
  • the element separating portion in the groove 31c of this example may be formed so as to include the element separating insulating film 38 and the light shielding film 39 in this order, similarly to the element separating portion of FIG. 10A.
  • the materials of the element separation insulating film 38 and the light-shielding film 39 may be the same as the materials of the element separation insulating film 33 and the light-shielding film 34, respectively.
  • the groove 31 of this example may be formed by the following procedure. First, a groove 31c is formed in the substrate 21 by etching from the surface S1 of the substrate 21. The groove 31c is formed from the surface S1 of the substrate 21 in the same manner as in the step A of FIG. Next, a part of the groove 31 is formed in the substrate 21 by etching from the surface S1 of the substrate 21. Specifically, the entire linear groove 31a and the portion of each annular groove 31b that penetrates the substrate 21 are formed. The portion of the groove 31 is formed from the surface S1 of the substrate 21, unlike the step A in FIG. Next, an element-separating insulating film 33'and a light-shielding film 34' similar to the step B in FIG.
  • the element separation insulating film 38 is formed.
  • the remaining portion of the groove 31 is formed in the substrate 21 by etching from the back surface S2 of the substrate 21. Specifically, a portion of each annular groove 31b that does not penetrate the substrate 21 is formed.
  • the remaining portion of the groove 31 is formed from the back surface S2 of the substrate 21 in the same manner as in the step B of FIG.
  • the element separation insulating film 33 and the light-shielding film 34 are sequentially formed in the remaining portion of the groove 31.
  • the first to fourth examples can also be applied to the second to fifth embodiments described later.
  • the groove 31 of the present embodiment is formed so as to include a plurality of linear grooves 31a and a plurality of annular grooves 31b, and each annular groove 31b includes a portion penetrating the substrate 21 and the substrate 21. It is formed so as to include a portion that does not penetrate. As a result, each annular groove 31b of the present embodiment is formed so as to have an opening E1 under a portion that does not penetrate the substrate 21.
  • the present embodiment it is possible to transfer the signal charge from the predetermined photodiode PD to the floating diffusion unit FD via the opening E1, and the stray light from the other photodiode PD to the floating diffusion unit FD. Can be suppressed by the light-shielding film 34 in the annular groove 31b. Further, according to the present embodiment, the stray light from one photodiode PD to another photodiode PD can be suppressed by the light-shielding film 34 in the linear groove 31a. Further, according to the present embodiment, the element separation insulating film 33 and the light-shielding film 34 in the groove 31 can suppress the color mixing between the pixels 1.
  • FIG. 13 is a cross-sectional view showing the structure of the solid-state image sensor of the second embodiment.
  • FIG. 13 shows nine pixels 1 included in the pixel array region 1 of FIG. 1, similarly to FIG.
  • FIG. 14 is a vertical cross-sectional view showing the structure of the solid-state image sensor of the second embodiment.
  • FIG. 15 is another vertical sectional view showing the structure of the solid-state image sensor of the second embodiment.
  • FIG. 14 shows a cross section (X'Z cross section) along the AA'line shown in FIG. 13, and
  • FIG. 15 shows a cross section (Y'Z cross section) along the BB' line shown in FIG. Shown.
  • FIG. 13 shows a cross section (XY cross section) along the AA'line shown in FIG. 14 and the BB' line shown in FIG.
  • FIG. 13 shows not only the components in the XY cross section but also some components located lower than the XY cross section.
  • each annular groove 31b of the present embodiment has a tubular shape extending in the Z direction, it has an opening E1 and an opening E2 in a part of the tubular shape.
  • the opening E2 is a portion in the substrate 21 in which the groove 31 is not formed, similarly to the opening E1. Therefore, the inner substrate portion of each annular groove 31b and the outer substrate portion of each annular groove 31b are connected to each other by the substrate portion in the opening E2.
  • each annular groove 31b of the present embodiment includes a portion that penetrates the substrate 21 and a portion that does not penetrate the substrate 21.
  • the portion that does not penetrate the substrate 21 extends from the back surface S2 of the substrate 21, but does not reach the front surface S1 of the substrate 21.
  • the opening E2 of the present embodiment is located below the portion that does not penetrate the substrate 21.
  • the opening E2 is an example of the second opening of the present disclosure.
  • the floating diffusion portion FD on the upper left of FIG. 13 is provided between the four photodiode PDs on the upper left, left, top, and center. Further, the signal charge generated by the photodiode PD in the center of FIG. 13 is accumulated in the floating diffusion portion FD on the upper left. Further, the floating diffusion unit FD on the upper left of FIG. 13 is initialized by the reset transistor RST on the upper left.
  • the annular groove 31b on the upper left of FIG. 13 has an opening E2 between the floating diffusion portion FD and the reset transistor RST.
  • the photodiode PD in the center is an example of the first photoelectric conversion unit of the present disclosure
  • the photodiode PD in the upper left is an example of the third photoelectric conversion unit of the present disclosure.
  • the photodiode PDs on the left and above are examples of the second and fourth photoelectric conversion units of the present disclosure.
  • the third photoelectric conversion unit is arranged on the opposite side of the first photoelectric conversion unit with respect to the floating diffusion unit FD
  • the reset transistor RST is the third photoelectric conversion unit with respect to the floating diffusion unit FD. It is located on the side.
  • the upper left annular groove 31b in FIG. 13 penetrates the substrate 21 between the left and upper photodiode PDs and the upper left floating diffusion portion FD. Therefore, the stray light from these photodiodes PD to the floating diffusion portion FD can be effectively suppressed by the light-shielding film 34 in the annular groove 31b.
  • the annular groove 31b on the upper left of FIG. 13 is formed so that the opening E1 remains between the photodiode PD in the center and the floating diffusion portion FD on the upper left. Therefore, the signal charge can be easily transferred from the photodiode PD to the floating diffusion portion FD via the opening E1.
  • the reason is that if the light-shielding film 34 exists between the photodiode PD and the floating diffusion portion FD, it becomes difficult to transfer the signal charge.
  • by providing an annular groove 31b that does not penetrate the substrate 21 between the central photodiode PD and the upper left floating diffusion portion FD stray light from the photodiode PD to the floating diffusion portion FD is suppressed to some extent. It becomes possible.
  • annular groove 31b on the upper left of FIG. 13 is formed so that the opening E2 remains between the photodiode PD on the upper left and the floating diffusion portion FD on the upper left. Therefore, even if the reset transistor RST is arranged on the upper left of the floating diffusion unit FD, the floating diffusion unit FD and the reset transistor RST can be easily electrically connected. Furthermore, by providing an annular groove 31b that does not penetrate the substrate 21 between the photodiode PD on the upper left and the floating diffusion portion FD on the upper left, stray light from the photodiode PD to the floating diffusion portion FD is suppressed to some extent. It becomes possible.
  • groove 31 can be similarly applied to the annular groove 31b other than the annular groove 31b on the upper left of FIG.
  • the solid-state image sensor of this embodiment can be manufactured by the methods shown in FIGS. 5 and 6. However, in the step B of FIG. 5, the groove 31 is formed so that the opening E2 of the annular groove 31b is formed in the same manner as the opening E1 of the annular groove 31b.
  • FIG. 16 is a cross-sectional view showing the structure of the solid-state image sensor of the third embodiment.
  • FIG. 16 shows nine pixels 1 included in the pixel array region 1 of FIG. 1, similarly to FIG.
  • FIG. 16 further shows a CC'line parallel to the X direction.
  • FIG. 17 is a vertical cross-sectional view showing the structure of the solid-state image sensor of the third embodiment.
  • FIG. 17 shows a cross section (XZ cross section) along the CC'line shown in FIG.
  • FIG. 16 shows a cross section (XY cross section) along the CC'line shown in FIG.
  • FIG. 16 shows not only the components in the XY cross section but also some components lower than the XY cross section for the sake of clarity.
  • the structure along the AA'line shown in FIG. 16 is the same as the structure shown in FIG. 3, and the structure along the BB'line shown in FIG. 16 is the same.
  • the structure is the same as that shown in FIG.
  • the solid-state image sensor of the present embodiment has the same components as the solid-state image sensor of the first embodiment.
  • the linear groove 31a on the left side of FIG. 16 has a plate-like shape extending in the Z direction, but has an opening E3 in a part of the plate-like shape.
  • the opening E3 is a portion in the substrate 21 in which the groove 31 is not formed, similarly to the opening E1. Therefore, the substrate portion on the left side of the linear groove 31a and the substrate portion on the right side of the linear groove 31a are connected to each other by the substrate portion in the opening E3.
  • the linear groove 31a of the present embodiment includes a portion penetrating the substrate 21 (FIG. 17) and a portion not penetrating the substrate 21.
  • the portion that does not penetrate the substrate 21 extends from the back surface S2 of the substrate 21, but does not reach the front surface S1 of the substrate 21.
  • the opening E3 of the present embodiment is located below the portion that does not penetrate the substrate 21.
  • the opening E3 is an example of the third opening of the present disclosure.
  • the solid-state image sensor of the present embodiment further includes a plurality of floating diffusion unit OFDs different from the floating diffusion unit FD, and a plurality of transfer transistors OFG different from the transfer transistor TR.
  • FIG. 16 shows one of these floating diffuser OFDs and two of these transfer transistors OFGs.
  • the floating diffusion unit OFD is an example of a charge storage unit different from the above-mentioned charge storage unit.
  • the solid-state image sensor of the present embodiment further includes an n + type semiconductor region 25 included in each floating diffusion unit OFD.
  • the n + type semiconductor region 25 is provided in the substrate 21 and is located near the surface S1 of the substrate 21.
  • Each floating diffusion unit OFD includes an n + type semiconductor region 25.
  • Each floating diffusion unit OFD of the present embodiment is provided between two photodiode PDs adjacent to each other.
  • the floating diffusion portion OFD of FIG. 16 is provided between the two photodiode PDs PD in the center and the left of FIG. 16 and is located in the opening E3.
  • This floating diffusion unit OFD is used as a charge storage unit common to the central and left photodiode PDs in FIG. 16, as will be described later.
  • the floating diffusion portion OFD of the present embodiment is accurately arranged at a position lower than the CC'line, but is shown in FIG. 16 for the sake of clarity. There is.
  • Each transfer transistor OFG is provided on the surface S1 of the substrate 21 and is arranged in the vicinity of the corresponding photodiode PD.
  • the transfer transistor OFG of FIG. 17 includes a gate insulating film 17, a gate electrode 18, and a side wall insulating film 19 in the same manner as the transfer transistor TR described above.
  • Each transfer transistor OFG of the present embodiment is provided between the corresponding photodiode PD and the stray diffusion unit OFD, in order to discharge the electric charge overflowing from the corresponding photodiode PD when intense light is incident. used.
  • the transfer transistor OFG of the present embodiment is arranged at a position lower than the CC'line, but is shown in FIG. 16 for the sake of clarity. ..
  • the solid-state image sensor of this embodiment can be manufactured by the methods shown in FIGS. 5 and 6. However, in the step B of FIG. 5, the groove 31 is formed so that the opening E3 of the linear groove 31a is formed in the same manner as the opening E1 of the annular groove 31b. Further, the floating diffusion portion OFD, the transfer transistor OFG, and the n + type semiconductor region 25 are formed by the step A in FIG.
  • each floating diffusion portion OFD can be used as a charge storage portion common to the two photodiode PDs.
  • FIG. 18 is a cross-sectional view showing the structure of the solid-state image sensor of the fourth embodiment.
  • FIG. 18 shows nine pixels 1 included in the pixel array region 1 of FIG. 1, similarly to FIG.
  • FIG. 19 is a vertical cross-sectional view showing the structure of the solid-state image sensor of the fourth embodiment.
  • FIG. 20 is another vertical sectional view showing the structure of the solid-state image sensor of the fourth embodiment.
  • FIG. 19 shows a cross section (X'Z cross section) along the AA'line shown in FIG. 18, and
  • FIG. 20 shows a cross section (Y'Z cross section) along the BB' line shown in FIG. Shown.
  • FIG. 18 shows a cross section (XY cross section) along the AA'line shown in FIG. 19 and the BB' line shown in FIG.
  • FIG. 18 shows not only the components in the XY cross section but also some components lower than the XY cross section for the sake of clarity.
  • the solid-state image sensor of the present embodiment includes a moth-eye structure 26 provided on the upper surface (back surface S2) of the substrate 21 on each photodiode PD, in addition to the components of the solid-state image sensor of the first embodiment. ..
  • the moth-eye structure 26 is a minute uneven structure provided on the upper surface of the substrate 21, and includes a plurality of convex portions and a plurality of concave portions. These recesses have, for example, a pyramid shape extending in the ⁇ Z direction and are arranged in a two-dimensional array. The element separation insulating film 33 and the flattening film 35 are embedded in these recesses. According to the present embodiment, by providing the moth-eye structure 26 on each photodiode PD, it is possible to reduce the reflection of incident light and improve the sensitivity of the solid-state image sensor.
  • the moth-eye structure 26 may scatter the incident light on the photodiode PD to the floating diffusion portion FD, causing stray light to the floating diffusion portion FD. Therefore, in the present embodiment, as described in the first embodiment, the floating diffusion portion FD is generally surrounded by the annular groove 31b, and the connection portion between the photodiode PD and the floating diffusion portion FD is limited to the opening E1. There is. Therefore, according to the present embodiment, it is possible to suppress stray light to the floating diffusion portion FD caused by the moth-eye structure 26 while enjoying the merits of the moth-eye structure 26.
  • the moth-eye structure 26 of the present embodiment can be applied to each embodiment other than the first embodiment.
  • the solid-state image sensor of this embodiment can be manufactured by the methods shown in FIGS. 5 and 6. However, before performing the step A in FIG. 6, the moth-eye structure 26 is formed on the back surface S2 of the substrate 21.
  • FIG. 21 is a plan view and a cross-sectional view showing the structure of the solid-state image sensor of the fifth embodiment.
  • FIG. 21 is a plan view schematically showing the structure of the pixel array region 2 of FIG. A in FIG. 21 shows four subregions 2a, 2b, 2c, and 2d included in the pixel array region 2 and a center C of the pixel array region 2.
  • the pixel array region 2 of the present embodiment is divided into four subregions 2a to 2d by boundary lines L1 and L2 passing through the center C.
  • the center C corresponds to the origin of four quadrants.
  • the partial area 2a is located at the upper left of A in FIG. 21.
  • the partial region 2b is located at the lower right of A in FIG. 21 and is provided on the opposite side of the partial region 2a with respect to the center C.
  • the partial region 2c is located at the upper right of A in FIG. 21 and is provided between the partial region 2a and the partial region 2b.
  • the partial region 2d is located at the lower left of A in FIG. 21 and is provided on the opposite side of the partial region 2c with respect to the center C.
  • Each of the partial regions 2a to 2d includes a plurality of pixels 1.
  • the partial regions 2a, 2b, 2c, and 2d are examples of the first, second, third, and fourth regions of the present disclosure, respectively.
  • the number of pixels 1 in each partial region may be the same as the number of pixels 1 in the other partial regions, or may be different from the number of pixels 1 in the other partial regions. Therefore, the center C of the pixel array area 2 may be located at the exact center of all the pixels 1 in the pixel array area 2, or a point deviated from the exact center of all the pixels 1 in the pixel array area 2. It may be located in.
  • FIG. 21B shows nine pixels 1 included in the partial region 2a, nine pixels 1 included in the partial region 2b, nine pixels 1 included in the partial region 2c, and nine pixels included in the partial region 2d. Pixel 1 is shown.
  • each of the partial regions 2a to 2d has a structure similar to the structure shown in FIG.
  • the partial region 2a includes a floating diffusion portion FD corresponding to the central photodiode PD, a transfer transistor TR, and a reset transistor RST at the lower right of the central photodiode PD, and surrounds the floating diffusion portion FD.
  • the annular groove 31b of the above has an opening E1 on the upper left thereof.
  • the partial region 2b is provided with a floating diffusion portion FD or the like corresponding to the central photodiode PD on the upper left, and the annular groove 31b around the floating diffusion portion FD has an opening E1 on the lower right thereof. is doing.
  • the partial region 2c is provided with a floating diffusion portion FD or the like corresponding to the central photodiode PD at the lower left thereof, and the annular groove 31b around the floating diffusion portion FD has an opening E1 at the upper right thereof.
  • the partial region 2d is provided with a floating diffusion portion FD or the like corresponding to the central photodiode PD on the upper right side thereof, and the annular groove 31b around the floating diffusion portion FD has an opening E1 on the lower left side thereof. ing.
  • the opening E1 of each annular groove 31b in each partial region is provided on the opposite side of the center C with respect to the annular groove 31b. Therefore, the opening E1 in the partial region 2a is provided on the opposite side of the opening E1 in the partial region 2b with respect to the center C. Similarly, the opening E1 in the partial region 2c is provided on the opposite side of the opening E1 in the partial region 2d with respect to the center C.
  • each opening E1 of the present embodiment faces the opposite side of the center C. This makes it possible to effectively suppress stray light from each opening E1 to the floating diffusion portion FD.
  • the structure of the pixel array region 2 near the boundary lines L1 and L2 may be set in a suitable manner depending on the mounting of the solid-state image sensor.
  • the solid-state image sensor of this embodiment can be manufactured by the methods shown in FIGS. 5 and 6. However, in the step B of FIG. 5, the opening E1 in each partial region is formed in the direction shown in B of FIG.
  • FIG. 22 is a block diagram showing a configuration example of an electronic device.
  • the electrical device shown in FIG. 22 is a camera 100.
  • the camera 100 includes an optical unit 101 including a lens group and the like, an image pickup device 102 which is a solid-state image pickup device according to any one of the first to fifth embodiments, and a DSP (Digital Signal Processor) circuit 103 which is a camera signal processing circuit.
  • the DSP circuit 103, the frame memory 104, the display unit 105, the recording unit 106, the operation unit 107, and the power supply unit 108 are connected to each other via the bus line 109.
  • the optical unit 101 captures incident light (image light) from the subject and forms an image on the imaging surface of the imaging device 102.
  • the image pickup apparatus 102 converts the amount of incident light imaged on the image pickup surface by the optical unit 101 into an electric signal in pixel units and outputs it as a pixel signal.
  • the DSP circuit 103 performs signal processing on the pixel signal output by the image pickup device 102.
  • the frame memory 104 is a memory for storing one screen of a moving image or a still image captured by the imaging device 102.
  • the display unit 105 includes a panel-type display device such as a liquid crystal panel or an organic EL panel, and displays a moving image or a still image captured by the image pickup device 102.
  • the recording unit 106 records a moving image or a still image captured by the imaging device 102 on a recording medium such as a hard disk or a semiconductor memory.
  • the operation unit 107 issues operation commands for various functions of the camera 100 under the operation of the user.
  • the power supply unit 108 appropriately supplies various power sources that serve as operating power sources for the DSP circuit 103, the frame memory 104, the display unit 105, the recording unit 106, and the operation unit 107 to these supply targets.
  • the solid-state image sensor can be applied to various other products.
  • the solid-state imaging device may be mounted on various moving objects such as automobiles, electric vehicles, hybrid electric vehicles, motorcycles, bicycles, personal mobility, airplanes, drones, ships, and robots.
  • FIG. 23 is a block diagram showing a configuration example of a mobile control system.
  • the mobile control system shown in FIG. 23 is a vehicle control system 200.
  • the vehicle control system 200 includes a plurality of electronic control units connected via the communication network 201.
  • the vehicle control system 200 includes a drive system control unit 210, a body system control unit 220, an external information detection unit 230, an in-vehicle information detection unit 240, and an integrated control unit 250.
  • FIG. 23 further shows a microcomputer 251, an audio image output unit 252, and an in-vehicle network I / F (Interface) 253 as components of the integrated control unit 250.
  • the drive system control unit 210 controls the operation of devices related to the drive system of the vehicle according to various programs.
  • the drive system control unit 210 includes a driving force generator for generating a driving force of a vehicle such as an internal combustion engine and a driving motor, a driving force transmission mechanism for transmitting the driving force to wheels, and a steering wheel of the vehicle. It functions as a control device such as a steering mechanism that adjusts the angle and a braking device that generates braking force for the vehicle.
  • the body system control unit 220 controls the operation of various devices mounted on the vehicle body according to various programs.
  • the body system control unit 220 functions as a control device for a smart key system, a keyless entry system, a power window device, various lamps (for example, a head lamp, a back lamp, a brake lamp, a blinker, a fog lamp) and the like.
  • the body system control unit 220 may be input with radio waves transmitted from a portable device that substitutes for the key or signals of various switches.
  • the body system control unit 220 receives such an input of radio waves or signals and controls a vehicle door lock device, a power window device, a lamp, and the like.
  • the vehicle outside information detection unit 230 detects information outside the vehicle equipped with the vehicle control system 200.
  • an image pickup unit 231 is connected to the vehicle exterior information detection unit 230.
  • the vehicle exterior information detection unit 230 causes the image pickup unit 231 to capture an image of the outside of the vehicle, and receives the captured image from the image pickup unit 231.
  • the vehicle exterior information detection unit 230 may perform object detection processing or distance detection processing such as a person, a vehicle, an obstacle, a sign, or a character on a road surface based on the received image.
  • the imaging unit 231 is an optical sensor that receives light and outputs an electric signal according to the amount of the light received.
  • the image pickup unit 231 can output an electric signal as an image or can output it as distance measurement information.
  • the light received by the imaging unit 231 may be visible light or invisible light such as infrared light.
  • the image pickup unit 231 includes the solid-state image pickup device according to any one of the first to fifth embodiments.
  • the in-vehicle information detection unit 240 detects information inside the vehicle equipped with the vehicle control system 200.
  • a driver state detection unit 241 that detects the driver's state is connected to the vehicle interior information detection unit 240.
  • the driver state detection unit 241 includes a camera that images the driver, and the in-vehicle information detection unit 240 has a degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 241. May be calculated, or it may be determined whether or not the driver is dozing.
  • This camera may include the solid-state image sensor according to any one of the first to fifth embodiments, and may be, for example, the camera 100 shown in FIG.
  • the microcomputer 251 calculates a control target value of the driving force generator, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the outside information detection unit 230 or the inside information detection unit 240, and controls the drive system.
  • a control command can be output to the unit 210.
  • the microcomputer 251 is a coordinated control for the purpose of realizing ADAS (Advanced Driver Assistance System) functions such as vehicle collision avoidance, impact mitigation, follow-up running based on inter-vehicle distance, vehicle speed maintenance running, collision warning, and lane deviation warning. It can be performed.
  • ADAS Advanced Driver Assistance System
  • the microcomputer 251 controls the driving force generator, the steering mechanism, or the braking device based on the information around the vehicle acquired by the vehicle exterior information detection unit 230 or the vehicle interior information detection unit 240, thereby controlling the driver. It is possible to perform coordinated control for the purpose of automatic driving that runs autonomously without depending on the operation.
  • the microcomputer 251 can output a control command to the body system control unit 220 based on the information outside the vehicle acquired by the vehicle exterior information detection unit 230.
  • the microcomputer 251 controls the headlamps according to the position of the preceding vehicle or the oncoming vehicle detected by the external information detection unit 230, and performs cooperative control for the purpose of anti-glare such as switching the high beam to the low beam. It can be carried out.
  • the audio image output unit 252 transmits an output signal of at least one of audio and image to an output device capable of visually or audibly notifying the passenger of the vehicle or the outside of the vehicle.
  • an audio speaker 261, a display unit 262, and an instrument panel 263 are shown as such output devices.
  • the display unit 262 may include, for example, an onboard display or a heads-up display.
  • FIG. 24 is a plan view showing a specific example of the set position of the imaging unit 231 of FIG. 23.
  • the vehicle 300 shown in FIG. 24 includes imaging units 301, 302, 303, 304, and 305 as the imaging unit 231.
  • the imaging units 301, 302, 303, 304, and 305 are provided at positions such as the front nose, side mirrors, rear bumpers, back doors, and the upper part of the windshield in the vehicle interior of the vehicle 300, for example.
  • the imaging unit 301 provided in the front nose mainly acquires an image in front of the vehicle 300.
  • the image pickup unit 302 provided on the left side mirror and the image pickup section 303 provided on the right side mirror mainly acquire an image of the side of the vehicle 300.
  • the imaging unit 304 provided on the rear bumper or the back door mainly acquires an image of the rear of the vehicle 300.
  • the imaging unit 305 provided on the upper part of the windshield in the vehicle interior mainly acquires an image in front of the vehicle 300.
  • the imaging unit 305 is used, for example, to detect a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.
  • FIG. 24 shows an example of the imaging range of the imaging units 301, 302, 303, 304 (hereinafter referred to as “imaging unit 301 to 304”).
  • the imaging range 311 indicates the imaging range of the imaging unit 301 provided on the front nose.
  • the imaging range 312 indicates the imaging range of the imaging unit 302 provided on the left side mirror.
  • the imaging range 313 indicates the imaging range of the imaging unit 303 provided on the right side mirror.
  • the imaging range 314 indicates the imaging range of the imaging unit 304 provided on the rear bumper or the back door.
  • the imaging range 311, 312, 313, 314 will be referred to as "imaging range 311 to 314".
  • At least one of the imaging units 301 to 304 may have a function of acquiring distance information.
  • at least one of the imaging units 301 to 304 may be a stereo camera including a plurality of imaging devices, or an imaging device having pixels for detecting a phase difference.
  • the microcomputer 251 uses the distance information obtained from the imaging units 301 to 304 to obtain the distance to each three-dimensional object within the imaging range 311 to 314 and the temporal change of this distance (vehicle 300). Relative velocity to) is calculated. Based on these calculation results, the microcomputer 251 is the closest three-dimensional object on the traveling path of the vehicle 300, and is a three-dimensional object traveling at a predetermined speed (for example, 0 km / h or more) in almost the same direction as the vehicle 300. , Can be extracted as a preceding vehicle.
  • a predetermined speed for example, 0 km / h or more
  • the microcomputer 251 can set an inter-vehicle distance to be secured in front of the preceding vehicle in advance, and can perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), and the like. As described above, according to this example, it is possible to perform coordinated control for the purpose of automatic driving or the like in which the vehicle autonomously travels without being operated by the driver.
  • the microcomputer 251 classifies three-dimensional object data related to a three-dimensional object into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on the distance information obtained from the imaging units 301 to 304. It can be extracted and used for automatic avoidance of obstacles. For example, the microcomputer 251 identifies obstacles around the vehicle 300 into obstacles that can be seen by the driver of the vehicle 300 and obstacles that are difficult to see. Then, the microcomputer 251 determines the collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or higher than the set value and there is a possibility of collision, the microcomputer 251 is used via the audio speaker 261 or the display unit 262. By outputting an alarm to the driver and performing forced deceleration and avoidance steering via the drive system control unit 210, driving support for collision avoidance can be provided.
  • At least one of the imaging units 301 to 304 may be an infrared camera that detects infrared rays.
  • the microcomputer 251 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured images of the imaging units 301 to 304.
  • pedestrian recognition is, for example, whether or not the pedestrian is a pedestrian by performing a procedure for extracting feature points in the captured images of the imaging units 301 to 304 as an infrared camera and a pattern matching process on a series of feature points indicating the outline of the object. It is performed by the procedure for determining.
  • the audio image output unit 252 When the microcomputer 251 determines that a pedestrian is present in the captured images of the imaging units 301 to 304 and recognizes the pedestrian, the audio image output unit 252 has a square contour line for emphasizing the recognized pedestrian.
  • the display unit 262 is controlled so as to superimpose and display. Further, the audio image output unit 252 may control the display unit 262 so as to display an icon or the like indicating a pedestrian at a desired position.
  • the groove is In the substrate, a first portion provided between two photoelectric conversion portions adjacent to each other and Including a second portion provided around the charge storage portion The second portion has a first opening between at least the first photoelectric conversion unit of the four photoelectric conversion units and the charge storage unit, and at least the second of the four photoelectric conversion units.
  • a solid-state image sensor that penetrates the substrate between the photoelectric conversion unit and the charge storage unit.
  • the second portion is further between the third photoelectric conversion unit and the charge storage unit of the four photoelectric conversion units, and the fourth photoelectric conversion unit and the charge storage unit of the four photoelectric conversion units.
  • the solid-state image sensor according to (1) which penetrates the substrate between the two.
  • the second portion further has a second opening between the third photoelectric conversion unit of the four photoelectric conversion units and the charge storage unit, and the fourth photoelectric conversion unit of the four photoelectric conversion units.
  • the pixel array region is provided between the first region, a second region provided on the opposite side of the first region with respect to the center of the pixel array region, and the first region and the second region.
  • a third region is included, and a fourth region provided on the opposite side of the third region with respect to the center of the pixel array region is included.
  • the first opening in the second region is provided on the opposite side of the first opening in the first region with respect to the center of the pixel array region.
  • the solid according to (13) wherein the first opening in the fourth region is provided on the opposite side of the first opening in the third region with respect to the center of the pixel array region.
  • a charge storage unit is formed between four photoelectric conversion units adjacent to each other.
  • a groove is formed in the substrate to form a groove.
  • a light-shielding film is formed in the groove. Including that The groove is In the substrate, a first portion provided between two photoelectric conversion portions adjacent to each other and Including a second portion provided around the charge storage portion The second portion has a first opening between at least the first photoelectric conversion unit of the four photoelectric conversion units and the charge storage unit, and at least the second of the four photoelectric conversion units.
  • a method for manufacturing a solid-state image sensor which is formed so as to penetrate the substrate between the photoelectric conversion unit and the charge storage unit.
  • the second portion is further between the third photoelectric conversion unit and the charge storage unit of the four photoelectric conversion units, and the fourth photoelectric conversion unit and the charge storage unit of the four photoelectric conversion units.
  • the second portion further has a second opening between the third photoelectric conversion unit of the four photoelectric conversion units and the charge storage unit, and the fourth photoelectric conversion unit of the four photoelectric conversion units.

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

Le problème décrit par la présente invention est de fournir : un dispositif d'imagerie à semi-conducteur qui peut améliorer l'effet de blocage de lumière d'une unité d'accumulation de charge ; et son procédé de fabrication. La solution selon l'invention concerne un dispositif d'imagerie à semi-conducteur comprenant : un substrat ; une pluralité d'unités de conversion photoélectrique disposées sur le substrat ; une unité d'accumulation de charge disposée entre quatre unités de conversion photoélectrique qui sont mutuellement adjacentes sur le substrat ; et un film de blocage de lumière disposé dans une rainure dans le substrat. La rainure comprend : une première partie disposée entre deux unités de conversion photoélectrique qui sont mutuellement adjacentes ; et une seconde partie disposée autour de l'unité d'accumulation de charge. La seconde partie a une première ouverture entre l'unité d'accumulation de charge et au moins une première unité de conversion photoélectrique des quatre unités de conversion photoélectrique et passe à travers le substrat entre l'unité d'accumulation de charge et au moins une seconde unité de conversion photoélectrique des quatre unités de conversion photoélectrique.
PCT/JP2020/046121 2020-01-29 2020-12-10 Dispositif d'imagerie à semi-conducteur et son procédé de fabrication WO2021153030A1 (fr)

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JP2004128193A (ja) * 2002-10-02 2004-04-22 Iwate Toshiba Electronics Co Ltd Ｃｍｏｓイメージセンサ
JP2014096490A (ja) * 2012-11-09 2014-05-22 Sony Corp 撮像素子、製造方法
WO2015001987A1 (fr) * 2013-07-03 2015-01-08 ソニー株式会社 Dispositif d'imagerie à semi-conducteurs, procédé de fabrication associé, et appareil électronique
JP2017152921A (ja) * 2016-02-24 2017-08-31 日本放送協会 撮像素子及びその駆動制御回路
WO2018008614A1 (fr) * 2016-07-06 2018-01-11 ソニーセミコンダクタソリューションズ株式会社 Élément d'imagerie, procédé de production d'élément d'imagerie, et dispositif électronique d'imagerie
WO2018083990A1 (fr) * 2016-11-02 2018-05-11 ソニーセミコンダクタソリューションズ株式会社 Élément d'imagerie, dispositif d'imagerie et dispositif électronique
WO2018216477A1 (fr) * 2017-05-24 2018-11-29 ソニーセミコンダクタソリューションズ株式会社 Élément de capture d'image à semi-conducteur et appareil électronique

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004128193A (ja) * 2002-10-02 2004-04-22 Iwate Toshiba Electronics Co Ltd Ｃｍｏｓイメージセンサ
JP2014096490A (ja) * 2012-11-09 2014-05-22 Sony Corp 撮像素子、製造方法
WO2015001987A1 (fr) * 2013-07-03 2015-01-08 ソニー株式会社 Dispositif d'imagerie à semi-conducteurs, procédé de fabrication associé, et appareil électronique
JP2017152921A (ja) * 2016-02-24 2017-08-31 日本放送協会 撮像素子及びその駆動制御回路
WO2018008614A1 (fr) * 2016-07-06 2018-01-11 ソニーセミコンダクタソリューションズ株式会社 Élément d'imagerie, procédé de production d'élément d'imagerie, et dispositif électronique d'imagerie
WO2018083990A1 (fr) * 2016-11-02 2018-05-11 ソニーセミコンダクタソリューションズ株式会社 Élément d'imagerie, dispositif d'imagerie et dispositif électronique
WO2018216477A1 (fr) * 2017-05-24 2018-11-29 ソニーセミコンダクタソリューションズ株式会社 Élément de capture d'image à semi-conducteur et appareil électronique

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