WO2021148895A1 - Réseau de dispositifs de traitement de lumière et son procédé de fabrication - Google Patents

Réseau de dispositifs de traitement de lumière et son procédé de fabrication Download PDF

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WO2021148895A1
WO2021148895A1 PCT/IB2021/050076 IB2021050076W WO2021148895A1 WO 2021148895 A1 WO2021148895 A1 WO 2021148895A1 IB 2021050076 W IB2021050076 W IB 2021050076W WO 2021148895 A1 WO2021148895 A1 WO 2021148895A1
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led
membrane
green
red
blue
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PCT/IB2021/050076
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Boon S. Ooi
Jung-Hong Min
Tien Khee Ng
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King Abdullah University Of Science And Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body

Definitions

  • Embodiments of the subject matter disclosed herein generally relate to a system and method for making a stacked light emitting diode (LED) array, and more particularly, to a method for making red-, green-, and blue-color vertically- stacked micro LEDs based on inorganic materials, by transferring LED membranes.
  • LED light emitting diode
  • the AIGalnP-based materials are known for their capability to emit red light and also light in the near-infrared regime. Furthermore, the AIGalnN-based materials are most efficient for the ultraviolet, blue, and green regimes. Therefore, these materials are used in optoelectronic devices such as LEDs, laser diodes (LDs), and photodetectors (PDs) either to generate desired wavelengths or to detect them.
  • the AIGalnP and AIGalnN materials are commonly grown on GaAs and c-plane sapphire, respectively, due to the ease of the production method. Inorganic micro LED arrays using AIGalnP and AIGalnN materials have attracted much attention recently because of their high-efficiency and the freedom to change the color from blue to red.
  • the liquid crystal display (LCD) widely used in the existing displays has a disadvantage in that the efficiency of using light coming from a back light unit (BLU) by the liquid crystal is less than 5%.
  • organic LEDs (OLEDs) one of the next-generation displays, have a high-color gamut due to the self-emitting characteristics without the BLU, the OLEDs have several conundrums such as low modulation response speed due to the low-mobility and burn-in effect.
  • micro LED arrays can reduce the pixel size to less than 10 pm, so it can be used for the small size display of Augmented Reality (AR) and Virtual Reality (VR) that requires more than 2000 pixel per inch (ppi) specification.
  • the micro LED arrays are durable for the external environment and have a fast modulation response speed due to the fast charge-carrier lifetime of inorganic materials.
  • the micro LED arrays have a number of advantages over the existing displays that use LCDs and OLEDs technology.
  • Micro LED arrays generally use three different inorganic LEDs or combine a color converter layer with a blue LED to achieve red, green and blue full color.
  • most developers have adopted a transfer method to realize the red/green/blue colors, for example using three types of inorganic LEDs consisting of AIGalnP and AIGalnN materials.
  • mesa structures are formed on the LED structure grown on the substrate, and micro-size LEDs are manufactured through passivation and metallization.
  • mesa structures identical to the LED size are formed on a rigid substrate, and then a metal layer is formed to separately manufacture target substrates.
  • Another micro LED array manufacturing method is a stamping method using polydimethylsiloxane (PDMS).
  • PDMS polydimethylsiloxane
  • Stamping patterns are made on the PDMS, and then the micro LEDs are transferred to the second substrate. This transfer process is repeated to complete the device, by arranging the micro LEDs in the desired position on the second substrate. That is, the micro LED arrays are first completed on the second substrate and then they are transferred to the driving circuit to complete the active matrix micro LED arrays at once [3] While this PDMS transfer method is economical and easy to use, the patterns for stamping must be manufactured separately, and there is a disadvantage in that a variation in the transfer yield occurs depending on the patterns.
  • a transfer method overcoming these disadvantages is a roll-to-roll transfer method, which uses a polymer film that can control the viscosity by a low temperature heat treatment.
  • micro-size LEDs are first manufactured by mesa structure, passivation, and metallization.
  • a viscous polymer film is attached to the fabricated LEDs and then peeled off to produce a polymer film with micro-size LED attached.
  • the driving circuit onto which the micro-size LED need to be transferred is prepared under the micro LED film, the positions of the driving circuit and the micro LED film are aligned, and then the viscosity of the film is removed to perform the roll-to-roll transfer [4]
  • micro LED arrays Most of the development with regard to the micro LED arrays is mainly focused on the direct transfer methods. However, in addition to the direct transfer methods, there are methods of transferring micro LEDs by applying a magnetic field to a desired position of the driving circuits by inking a block-shaped micro LEDs with a magnetic force in a solution.
  • the micro LED basic structure is formed by mesa formation, passivation, and metallization, and then the LED structure is additionally formed using a magnetic material in a block shape.
  • the pre-formed micro LEDs are prepared in the solution and they are dispersed in the solution. After that, a groove is made in the driving circuit to match the block-shaped micro LED in the driving circuit.
  • the micro LED solution is sprayed on the driving circuit and a magnetic force is applied to the driving circuit so that the block-shaped micro LEDs can be attached to the driving circuit’s groove to finally complete the active matrix micro LED arrays [5]
  • All of the above methods implement a full color using R/G/B LEDs.
  • it is possible to achieve the R/G/B full color by generating a blue monochromatic color into a micro-size LEDs and then forming red and green colors by using conversion layers into micro pixels.
  • This method has a problem in that its efficiency is reduced due to the use of the color converter, when compared to the method of using R/G/B discrete devices.
  • this method has the advantage of being a simple process with no transfer necessary as only one blue color micro LED driving device is required.
  • the micro LED arrays are being developed based on the transfer methods, and in addition, various attempts are being made for using a color converter.
  • the pick and place transfer methods require a transfer time of at least three days or more in order to realize a large 100-inch display. There is even the difficulty of implementing a complete display.
  • the display array may be distorted, causing screen distortion.
  • the use of the color converter in the micro LED array also causes a problem that the high-efficiency characteristics of the micro LED are also degraded [7 - 10]
  • the efficiency is greatly reduced by side wall damage and the full width at half maximum of each color of red/green/blue is substantially increased.
  • the size of the micro LED is reduced below ⁇ 10 pm, the external quantum efficiency (EQE) drops from 80% to below 30% and a leakage current increases significantly.
  • the characteristics of the AIGalnP material for the red color and of the AIGalnN material for the green and blue colors are different.
  • the EQE drops below 10%.
  • a micro LED is considered herein a device that has a diameter or width less than 200 pm.
  • the method includes providing a red LED, a green LED, and a blue LED, removing a substrate of each of the red, green and blue LEDs to obtain a red LED membrane, a green LED membrane, and a blue LED membrane, and bonding the red LED membrane, the green LED membrane, and the blue LED membrane on top of each other and to a common substrate with corresponding bonding layers.
  • Each of the red LED membrane, the green LED membrane, and the blue LED membrane is fully transparent to light while each of the red LED, the green LED, and the blue LED is not fully transparent to light.
  • a red, green, and blue tandem light processing device array that includes a common substrate, a red light emitting device, LED, membrane located over the common substrate, wherein the red LED membrane is a red LED with no substrate, a green LED membrane located over the red LED membrane, wherein the green LED membrane is a green LED with no substrate, a blue LED membrane located over the green LED membrane, wherein the blue LED membrane is a blue LED with no substrate, and plural electrodes.
  • Each of the red LED membrane, the green LED membrane, and the blue LED membrane is transparent to light while each of the red LED, the green LED, and the blue LED is not transparent to light.
  • a red, green, and blue tandem light processing device array that includes a common substrate, a red light emitting device, LED, membrane located over the common substrate, a green LED membrane located over the red LED membrane, and a blue LED membrane located over the green LED membrane.
  • Each of the red LED membrane, the green LED membrane, and the blue LED membrane includes only a p-type region, an active region, and an n-type region, but no substrate.
  • Each of the red LED membrane, the green LED membrane, and the blue LED membrane is fully transparent to light because of lack of the substrate.
  • Figure 1 is an illustration of a red LED
  • Figure 2 is a schematic diagram of a green/blue LED
  • Figure 3 is a generic diagram of a red, green, or blue LED, each having a solid substrate;
  • Figure 4 is an illustration of a red LED membrane
  • Figure 5 is a schematic diagram of a green/blue LED membrane
  • Figure 6 is a schematic diagram of a red, green or blue LED membrane, each having no solid substrate
  • Figure 7 illustrates the red, green or blue LED membrane having a current spreading layer and a supporting layer, but no solid substrate
  • Figure 8A illustrates the red LED membrane being bonded to a common substrate
  • Figure 8B illustrates the green LED membrane being bonded to the red LED membrane
  • Figure 8C illustrates the blue LED membrane being bonded to the green LED membrane
  • Figure 8D illustrates the stack of red, green and blue LED membranes with all the supporting layers removed and having a single solid substrate
  • Figure 9 is a flow chart of a method for forming the stack of red, green and blue LED membranes; [0023] Figures 9A to 9H illustrate the steps of successively etching various layers from the stack of red, green and blue LED membranes to form a micro LED array;
  • Figure 10 illustrates the micro LED array used as a light generating device
  • Figure 11 illustrates the micro LED array used as a light sensor
  • Figure 12 is a flow chart of a method for forming a micro LED array.
  • Red-color LEDs are composed of (Al, Ga, In) P compound semiconductor materials
  • the green- and blue-color LEDs are composed of (Al, Ga, In) N compound semiconductor materials, respectively.
  • the red-, green- and blue-color LEDs are fabricated as membranes by removing their hard substrates (GaAs for the red-color LED and Si for the green- and blue-color LEDs).
  • the obtained red/green/blue LED membranes are then vertically stacked on a common substrate to form the micro LED.
  • the fabrication of the LED membranes is proposed to use AIGalnP and AIGalnN materials, and the membranes are then transferred to a desired substrate to obtain the micro LED arrays.
  • This method of manufacturing is believed to solve the problems of the existing micro LED arrays.
  • the novel method of fabrication of the micro LED arrays transfers plural LED membranes, which are in the form of a film, compared to the conventional method of transferring each solid pixel one by one.
  • the issue of yield and disparity after transfer can be solved and the transfer process time can be greatly reduced.
  • by adopting a vertical transfer that using the LED membranes versus the horizontal transfer that uses the traditional pick and place methods minimizes efficiency reduction caused by the reduced size of the LEDs.
  • the size of each pixel should be about 30 pm.
  • the size of each LED can be tuned depending on the efficiency rate related to the characteristics of each LED in order to improve the total efficiency.
  • the novel membrane transfer process can align the p/n junction of the LED in one direction. It is possible to manufacture the R/G/B color LEDs in the form of triple tandem LEDs by aligning the p/n junctions in one direction.
  • the triple tandem LED has an advantage because the total number of electrodes can be reduced from six to four or two for emitting the R/G/B full color and white color.
  • Figure 1 shows the configuration of the AIGalnP-based red LED, which is grown on a GaAs substrate
  • Figure 2 shows the AIGalnN-based green and blue LEDs, which are grown on a Si substrate.
  • Figure 1 shows the AIGalnP-based red LED 100 being made on the GaAs substrate 110.
  • the various layers of the red LED 100 starting from the top toward the GaAs substrate 110, include a 2 pm-thick GaP layer 112.
  • the layer 112 serves as a p-contact and window layer.
  • a tensile strain barrier reducing (TSBR) layer 114 is present, to alleviate the lattice mismatch between the layer 112 and an AllnP layer 116.
  • TSBR tensile strain barrier reducing
  • the active layer 130 is present, which includes the multiple quantum wells (MQWs) defined by one or more pairs of GalnP/AIGalnP layers.
  • the active layer 130 is sandwiched between the p-type region 120 and an n-type region 140, which includes AIGalnP and GaAs layers, which serve as contacts.
  • An etch stop layer 142 is formed of GalnP to later wet etch the solid GaAs substrate 110.
  • the green/blue LEDs 200 and 200’ which are shown in Figure 2, have a Si substrate 210 on which the following structure is placed: a p-GaN contact layer 212 and an electron blocking layer 214, which form the p-type region 220.
  • an MQWs layer 230 that includes GaN / InGaN / AIGaN layers.
  • An n- type layer 240 is provided under the MQW layer 230.
  • AIGaN / AIN buffer layers 242 and 244 are also present to mitigate the lattice mismatch between the n-GaN and the Si substrates 210.
  • the structures of the R/G/B color LEDs 100/200/200’ can be changed for the purpose of improving efficiency, but the red color LED 100 uses the GaAs substrate and the blue and green color LEDs 200/200’ use the Si substrate. Note that the thickness of the various layers shown in Figure 2 and also the chemical composition of the MQW layer 230 may be different for the green LED 200 and the blue LED 200’.
  • the structures of the LEDs 100, 200 and 200’ are shown in Figures 1 and 2 for illustrative purposes, but these configurations are known in the art and variations of these configurations can also be used for implementing the transfer method to be discussed next.
  • the structures shown in Figures 1 and 2 are usually solid, i.e., they cannot be bent, and also they are mostly opaque to the light, i.e., a light ray would not be able to pass through the entire LED structure, from the substrate to the top layer, especially because of the solid substrates 110/210.
  • This characteristic is schematically illustrated in Figure 3, where an incoming light ray 300 is completely absorbed/dissipated by the LED, and no corresponding light is exiting the substrate 110/210.
  • the generic LED shown in Figure 3 not only illustrates the lack of the transparency feature, but also shows the basic layers of these structures. For simplicity, from now on, the structure shown in Figure 3 is used to indicate an LED having a solid substrate. Because of the solid substrate, the LED structures 100,
  • the substrates 110, 210 of these structures are removed up to the buffer layers 142/242/244, as shown in Figures 4 and 5, then the slimmed down corresponding LED structures 100S, 200S, and 200’S become transparent to light, as illustrated in Figure 6, where the incoming light 300 enters the top region of the slimmed down LED and exits the bottom region.
  • This slimmed down version of a R/G/B LED is called herein an LED membrane.
  • an LED membrane is similar to a traditional LED except that its substrate has been removed. Because of this feature, the LED membranes 100S/200S/200’S are transparent to light.
  • the buffer layers 142/242/244 have the purpose of facilitating the removal of the substrate 110/220 without damaging the n-type layer 140/240.
  • the buffer layers can also be removed.
  • an indium tin oxide (ITO) electrode 700 is deposited on the p-type region 120/220 of each LED structure 100S, 200S, 200’S as illustrated in Figure 7.
  • the ITO electrode 700 acts as a current spreading layer and as an etch stop layer during the transfer process.
  • the current spreading layer can be selected to have a transparency to light of about 70%. In one application, this layer is made of ZnO instead of ITO.
  • a support layer 710 is formed over the ITO layer 700, and this layer supports the entire membrane during the transfer process.
  • the annealing conditions of the ITO layer 700 can be different for each LED structure due to the different characteristics of the AIGalnP material and the AIGalnN material.
  • Various metals and organic materials can be used for the support layer 710.
  • the GaAs and Si substrates are removed by wet etching, and the R/G/B color membranes 100S, 200S, and 200’S are obtained.
  • a first adhesive bonding layer 802 (e.g., adhesive polymer as PDMS or SU8) is spread over a target substrate 810 and in step 902 the red LED membrane 100S is attached to the target substrate 810 with the first adhesive bonding layer 802, as illustrated in Figure 8A.
  • the target substrate 810 may include electronics 812 associated with driving the LED membranes, so that the target substrate may be the driving circuit.
  • step 904 the supporting layer 710 of the red LED membrane 100S is removed (e.g., with wet etching and the current spreading layer 700 acts as a wet stop layer).
  • step 906 a second adhesive bonding layer 802 is added on top of the current spreading layer 700 of the red LED structure 100S, and the green LED membrane 200S is placed in step 908 directly over the second adhesive bonding layer 802, to bond the green LED membrane to the red LED membrane, as shown in Figure 8B.
  • step 910 the supporting layer 710 of the green LED membrane 200S is removed, in step 912 a third adhesive bonding layer 802 is added on the top of the green LED membrane, and in step 914, the blue LED membrane 200’S is placed over the third adhesive bonding layer 802, as illustrated in Figure 8C. Note that the specific layers of each LED membrane are omitted in these figures for simplicity.
  • step 916 the supporting layer 710 of the blue LED membrane 200’S is removed to form the stacked R/G/B micro LED array 800, as illustrated in Figure 8D. Note that the stack 800 in Figure 8D has the red, green and blue LED membranes added in this order onto the driving circuit 810. Other orders may be implemented if desired, as dictated by the intended application.
  • FIG. 9A A method for manufacturing a vertical tandem R/G/B LED is now discussed with regard to Figures 9A to 9H.
  • the stack 800 obtained in Figure 8D is processed by etching the current spreading layer 700 of the blue LED structure 200’S, as illustrated in Figure 9A, up to the n-GaN layer 240.
  • the current spreading layer 700 of the green LED structure 200S is exposed by etching as shown in Figure 9B.
  • the n-type layer 240 of the green LED structure 200S is exposed by etching as shown in Figure 9C. It is noted that each etching step removes less surface area than the previous etching step, so that a pyramid-type structure is obtained.
  • the current spreading layer 700 of the red LED structure 100S is exposed by etching, as shown in Figure 9D.
  • the n-type layer 140 of the red LED structure 100S is exposed by etching, as shown in Figure 9E.
  • the etching take place all around the layers illustrated in Figures 9A to 9E, but for simplicity, the etching is shown only on two sides of the structure 800.
  • the size (e.g., diameter) of each of the etched region is illustrated in Figure 9E by reference symbols L1 to L6.
  • L1 is about 5 to 20 pm
  • L2 is about 10 to 30 pm
  • L3 is about 20 to 50 pm
  • L4 is about 30 to 80 pm
  • L5 is about 50 to 150 pm.
  • a length L6 of the entire LED array 900 is less than 200 pm.
  • each exposed layers are passivated with a passivation layer 902, as shown in Figure 9F.
  • the passivation may be performed with dielectrics such as S1O2, AI2O3, and SiN x to secure p/n contact regions of the LED membranes.
  • Parts 904 of each exposed n-type layer or current spreading layer are left free of the passivation material, as also shown in Figure 9F.
  • Four electrodes 906A to 906D are formed by metallization in each of the free parts 904, to establish an electrical contact with each of the n-type layers of the LED structures and also with their current spreading layers, as illustrated in Figure 9G.
  • a top view of the obtained micro LED array 900 is shown in Figure 9H.
  • the fabricated R/G/B tandem micro LED array 900 can be used either to emit light that has R/G/B color or white light by using two or four of the four electrodes 906A to 906D.
  • the R/G/B tandem micro LED array 900 can be used as a micro LED display 1000, as shown in Figure 10, when plural of the R/G/B tandem micro LED arrays 900-I are formed on a same substrate 1010.
  • Figure 10 shows only three R/G/B tandem micro LED arrays 900-I, the value of I can be from one to tens of thousands, depending on the application.
  • red light 1014 is emitted by the red LED membrane 100S, and no other light is emitted by the other LED membranes. Note that the lights 1010, 1012, and 1014 are emitted through the entire surface of the array as the membranes 100S, 200S, and 200’S are transparent, as previously discussed with regard to Figure 6. If all the electrodes 906A to 906D are supplied with electrical power, then the blue light 1010, the green light 1012, and the red light 1014 is simultaneously emitted by a single R/G/B tandem micro LED array 900-I, which means that white light can be generated.
  • a controller 1020 may located on the substrate 1010 or away from the substrate, but electrically connected to each electrode 406A to 406D, and may be configured to send corresponding signals to one or more of the electrodes, to generate one or more wavelengths.
  • the R/G/B tandem micro LED array 900 may also be used as a receiver or light detector 1100, as shown in Figure 11.
  • blue light 1010, or green light 1012, or red light 1014 or any combination of them may be shined on the R/G/B tandem micro LED array 900, which is supported by a substrate 1102.
  • the corresponding LED membrane transforms the corresponding light into an electrical current
  • a controller 1110 located on substrate 1102 or away from the substrate, but electrically connected to each electrode 406A to 406D, receives corresponding signals indicative of the incoming light, and can be programmed to calculate the intensity of the detected light.
  • Both the light generator 1000 and the light detector 1100 can be configured to have one unit 900 that includes the red, green and blue light LEDs formed on top of each other and this unit has a diameter or length less than 200 pm, which makes the entire LED array to be a micro LED array.
  • a method for manufacturing a red, green, and blue tandem light emitting device, LED, array 1000 or 1100 is now discussed with regard to Figure 12.
  • the method includes a step 1200 of providing a red LED 100, a green LED 200, and a blue LED 200’, a step 1202 of removing a substrate of each of the red, green and blue LEDs to obtain a red LED membrane 100S, a green LED membrane 200S, and a blue LED 200’S membrane 200’S, and a step 1204 of bonding the red LED membrane 100S, the green LED membrane 200S, and the blue LED 200’S membrane 200’S on top of each other and to a common substrate 810 with corresponding bonding layers 802.
  • Each of the red LED membrane 100S, the green LED membrane 200S, and the blue LED 200’S membrane 200’S is transparent to light while each of the red LED 100, the green LED 200, and the blue LED 200’ is not transparent to light.
  • the method may further include, before the step of removing, forming a current spreading layer on top of each of the red LED, the green LED, and the blue LED, and adding a support layer to each of the current spreading layers.
  • each of the current spreading layers has a transparency of 70% or higher.
  • the current spreading layers are made of ITO and the support layer is a metal or polymer.
  • the step of bonding may include bonding the red LED membrane directly to the common substrate, removing the support layer from the red LED membrane, bonding the green LED membrane directly to a top of the red LED membrane, removing the support layer from the green LED membrane, bonding the blue LED membrane directly to a top of the green LED membrane, and removing the support layer from the blue LED membrane.
  • the red, green and blue LED membranes are configured to collectively or individually act for light-emission, wavelength detection, photovoltaic and optical modulation functionalities.
  • the bonded red, green and blue LED membranes conform to any shape of surface, concave or convex (because of the lack of the solid substrate), to vary the angle of view for outgoing or incoming light.
  • the red LED is based on AIGalnP formed on a GaAs substrate and the green and blue LEDs are based on AIGalnN formed on a Si substrate.
  • the method may further include etching successively the red LED membrane 100S, the green LED membrane 200S, and the blue LED 200’S membrane 200’S to expose corresponding n-type regions for each LED membrane.
  • the method may further include depositing metallic electrodes on each of the exposed corresponding n-type regions for each LED membrane, and also depositing a metallic electrode on top of one of the red LED membrane 100S, the green LED membrane 200S, and the blue LED 200’S membrane 200’S to form the tandem LED array 900.

Abstract

La présente invention concerne un procédé de fabrication d'un réseau de dispositifs émetteur de micro-lumière, DEL, en tandem flexible et multifonctionnel, rouge, vert et bleu, comprenant la fourniture (1200) d'une DEL rouge (100), d'une DEL verte (200), et d'une DEL bleue (200') ; l'élimination (1202) d'un substrat de chacune des DEL rouges, vertes et bleues afin d'obtenir une membrane de DEL rouge (100S), une membrane de DEL verte (200S), et une membrane de DEL bleue (200'S) ; et la liaison (1204) de la membrane de DEL rouge (100S), de la membrane de DEL verte (200S) et de la membrane de DEL bleue (200'S) les unes sur les autres et à un substrat commun (810) avec des couches de liaison correspondantes (802). Chacune de la membrane de DEL rouge (100S), de la membrane de DEL verte (200S), et de la membrane de DEL bleue (200'S) est entièrement transparente à la lumière tandis que chacune de la DEL rouge (100), de la DEL verte (200) et de la DEL bleue (200') n'est pas complètement transparente à la lumière.
PCT/IB2021/050076 2020-01-22 2021-01-06 Réseau de dispositifs de traitement de lumière et son procédé de fabrication WO2021148895A1 (fr)

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