WO2021147255A1 - Electrode piece, carrier, and coating system - Google Patents

Abstract

The present application relates to the technical field of solar cells. Disclosed are an electrode piece, a carrier, and a coating system, for eliminating the abnormal color of the edge of a silicon wafer caused by the unwanted deposition on the wafer edge during a surface film formation process, thereby improving the coating quality of silicon wafers. The electrode piece comprises: at least one carrier unit. At least one surface of each carrier unit has a carrier area and a peripheral area, and the peripheral area is located on the periphery of the carrier area. At least one surface of each carrier unit is provided with at least one groove for preventing the unwanted deposition on the wafer edge. The at least one groove is located at the peripheral area. The carrier comprises the electrode piece mentioned in the technical solution. The electrode piece provided in the present application is used in a coating system.

Description

Electrode sheet, sheet carrier and film coating system

This application claims the priority of a Chinese patent application filed with the Chinese Patent Office on January 20, 2020, the application number is 202020130174.0, and the invention title is "An electrode sheet, a carrier and a coating system", the entire content of which is incorporated by reference In this application.

Technical field

This application relates to the technical field of solar cells, in particular to an electrode sheet, a slide carrier and a coating system.

Background technique

At present, the production process of solar cells mainly includes the steps of surface texturing, diffusion bonding, surface film formation, screen printing and high temperature sintering. In the surface film forming step, plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, abbreviated as PECVD) is mainly used to form an anti-reflection film on the surface of the silicon wafer that has formed a PN junction to improve the final solar cell The photoelectric conversion efficiency.

Specifically, when the anti-reflection film is formed on the surface of the silicon wafer, the silicon wafer is hung on the graphite boat of the graphite boat, and the graphite boat is placed in the coating chamber of the coating equipment, and then ionized in the coating chamber under high temperature and high pressure. The reaction gas makes the reaction gas plasma and chemical reaction occurs. At this time, the reaction product is deposited on the surface of the silicon wafer, so that an anti-reflection film is formed on the surface of the silicon wafer. However, the use of PECVD to form an anti-reflection film on the surface of a silicon wafer is prone to winding plating problems, resulting in abnormal color at the edge of the silicon wafer, thereby reducing the coating yield of the silicon wafer.

Summary of the invention

The purpose of the present application is to provide an electrode sheet, a slide carrier and a coating system to alleviate the problem of abnormal color of the edge of the silicon wafer caused by the winding plating during the surface film formation process, thereby improving the coating yield of the silicon wafer.

In the first aspect, this application provides an electrode sheet. The electrode sheet includes: at least one slide unit. At least one surface of each slide unit has a slide area and a peripheral area, and the peripheral area is located in the circumferential direction of the slide area. At least one surface of each slide unit is provided with at least one groove for suppressing the plating phenomenon. At least one tank is located in the peripheral area. In the electrode sheet provided in the present application, at least one groove body is opened on at least one surface of each slide unit, so that when two electrode sheets are arranged oppositely, the groove body contained in at least one electrode sheet faces the surface of the other electrode sheet. It can be ensured that the distance between the regions where the grooves are opened on the two electrode sheets is relatively large (compared to the existing method where the grooves are not opened). Based on this, when the electrode sheet provided in the embodiments of the present application is applied to a carrier such as a graphite boat, the substrate to be formed into a film is hung on the electrode sheet contained in the carrier, and the substrate is controlled to be hung on the carrier. The unit is provided with a slide area on the surface of the tank. On this basis, when PECVD is used to form a film on the surface of the substrate, the intensity of the electric field between the grooved regions of the two electrode plates (hereinafter referred to as the electric field of the groove region) can suppress the plating phenomenon to a certain extent, so that the two A film with uniform thickness is formed on the surface of the substrate on which the electrode sheet is hung, so as to alleviate the problem of abnormal color of the edge of the silicon chip caused by the winding plating during the surface film forming process, thereby improving the coating yield of the silicon chip and the production efficiency of the solar cell.

_{In a possible implementation manner, on the same surface of each slide unit, the distance d 1} from the side of the slot of the groove near the outer edge of the slide area to the outer edge of the slide area is greater than or equal to zero.

When d ₁ =0, the side of the notch of the tank body close to the outer edge of the slide area has substantially overlapped with the outer edge of the slide area, so that the electric field of the tank body area and the electric field of the slide area (that is, the two electrode plates hang The electric field between the silicon wafers and other substrates can be seamlessly superimposed, so as to maximize the abnormal color of the edge of the silicon wafer caused by the electric field in the tank area around the plating, and improve the coating yield of the silicon wafer.

When d ₁ ＞0, there is a certain distance between the slot of the tank and the outer edge of the carrier area, so that the electric field between the electric field in the tank area and the electric field in the carrier area (hereinafter referred to as the transition electric field) is affected by the electric field in the tank area. Co-influence with the electric field of the slide area. At this time, along the direction from the electric field in the carrier area to the electric field in the tank area, the electric field intensity of the transition electric field gradually increases. Therefore, the electrode sheet provided in this application can alleviate the abnormal color of the edge of the silicon chip caused by the winding plating to a certain extent. , Improve the yield of silicon wafer coating.

_{In a possible implementation manner, on the same surface of each slide unit, the distance d 2} between the side of the slot of the groove near the outer edge of the peripheral area and the outer edge of the peripheral area is greater than or equal to 0 and less than d, d It is the distance between the outer edge of the slide area and the outer edge of the peripheral area.

When d ₂ =0, the side of the notch of the groove body close to the outer edge of the peripheral area has already coincided with the outer edge of the peripheral area. At this time, the grooves provided on at least one surface of each slide unit are substantially notched grooves.

When 0 < d ₂ < d, the side of the slot of the groove body close to the outer edge of the peripheral area is located in the peripheral area. At this time, the grooves provided on at least one surface of each slide unit are essentially grooves.

In a possible implementation manner, on the same surface of each slide unit, the distance between the outer edge of the slide area and the outer edge of the peripheral area is d, d = d ₀ + d ₁ + d ₂ , and d ₀ is The distance between the side of the notch of the trough near the outer edge of the _{slide area and the side near the outer edge of the peripheral area, d 1} is the same surface of each slide unit, and the notch of the trough is near the outer edge of the slide area The distance between one side of and the outer edge of the slide area, and d ₂ is the distance between the side of the slot near the outer edge of the peripheral area and the outer edge of the peripheral area on the same surface of each slide unit.

_{In a possible implementation manner, on the same surface of each slide unit, the distance d 1} between the side of the slot of the groove body close to the slide area and the outer edge of the slide area = 0.01 mm˜0.5 mm. At this time, under the influence of the electric field in the tank area, the transient electric field mentioned above can effectively alleviate the problem of coating around the edge of silicon wafers and other substrates caused by the high electric field strength of the electric field in the carrier area, thereby further improving the coating yield of silicon wafers. .

_{In a possible implementation manner, on the same surface of each slide unit, the distance d 0} between the side of the slot of the groove near the outer edge of the slide area and the side near the outer edge of the peripheral area is 0.1 mm- 15mm. At this time, the electric field in the slot area can effectively alleviate the problem of plating around the edges of substrates such as silicon wafers, and can also minimize the impact of excessively wide notches on the structural strength of the electrode sheets.

In a possible implementation manner, on the same surface of each slide unit, the depth D of each groove body is smaller than the maximum thickness T of the peripheral area, so as to prevent the groove body from penetrating the electrode sheet and affecting the normal coating.

In a possible implementation manner, on the same surface of each slide unit, the depth D of each groove is less than half of the maximum thickness T of the peripheral area. At this time, the grooves provided on the two surfaces of the slide unit will not penetrate, so as to ensure that when the slide unit is mounted with silicon wafers, the slide area of the slide unit is not easily caused by the pulling of the silicon wafer. The function is damaged, so that under the normal condition of film formation on the surface of the substrate such as silicon wafer, the problem of plating around the edge of the substrate such as silicon wafer is alleviated. For example: when the thickness of the electrode sheet is 2 cm, the depth D of each groove on the same surface of each slide unit is greater than or equal to 0.1 mm and less than 1.0 cm.

In a possible implementation manner, at least one slide unit includes at least two slide units. The grooves opened on the same surface of two adjacent slide units are connected into one body to further reduce the weight of the electrode sheet.

In a possible implementation manner, the at least one trough body includes an annular trough body. The annular groove is arranged around the circumference of the slide area. At this time, the entire slide area is surrounded by the ring-shaped groove, so that the ring-shaped groove can alleviate the problem of being plated around the edges of the silicon wafer and other substrates in the circumferential direction during the film formation process.

In a possible implementation manner, at least one trough body includes a plurality of trough bodies. A plurality of grooves are arranged around the circumference of the carrier area, so that during the process of forming a film on the surface, the plurality of grooves can alleviate the plating problem at multiple locations on the edge of a substrate such as a silicon wafer.

In a possible implementation manner, a plurality of tank bodies are connected as a whole. At this time, the connected tank body can be regarded as the ring-shaped tank body described above.

For example, two adjacent trough bodies are connected through a groove with a relatively small opening. Another example: two adjacent tank bodies can be directly connected together.

In another possible implementation manner, there is an interval between two adjacent grooves. At this time, in the process of forming a film on the surface, multiple grooves can alleviate the plating problem at multiple locations on the edge of a substrate such as a silicon wafer.

In a possible implementation manner, at least one of the plurality of groove bodies is a groove or a notched groove.

In a possible implementation manner, the groove shapes of the multiple groove bodies are the same or partly the same. Of course, the groove shapes of multiple tank bodies are different.

In a possible implementation manner, each slide unit of the above-mentioned electrode sheet is provided with a slide window located in the slide area. The slide window not only helps to reduce the weight of the entire electrode sheet, but also reduces the possibility of the slide unit wearing silicon wafers and other substrates.

In a possible implementation manner, each slide unit is provided with at least two pinch point holes that are matched with the pinch point axis. When positioning substrates such as silicon wafers, a pinch point shaft can be built into each pinch point hole to use the pinch point shaft to hang the silicon wafer and other substrates on the slide area of the slide unit included in the electrode sheet.

In the second aspect, the present application provides a slide carrier. The slide includes at least one electrode sheet described in the first aspect or any possible implementation manner of the first aspect.

In a possible implementation manner, the above-mentioned slide carrier is a graphite boat.

The beneficial effects of the slide carrier provided by the second aspect or any possible implementation manner of the second aspect are the same as the beneficial effects of the electrode sheet described in the first aspect or any possible implementation manner, and will not be repeated here.

In the third aspect, the present application provides a coating system. The coating system includes a coating device and the second aspect or the slide carrier described in any possible implementation manner of the second aspect. The coating equipment has a coating chamber for coating. When the coating system is in the coating state, the carrier is located in the coating chamber.

In a possible implementation manner, the above-mentioned coating equipment is a PECVD coating equipment.

The beneficial effects of the coating equipment provided by the third aspect or any possible implementation manner of the third aspect are the same as the beneficial effects of the electrode sheet described in the first aspect or any possible implementation manner, and will not be repeated here.

The above description is only an overview of the technical solution of this application. In order to understand the technical means of this application more clearly, it can be implemented in accordance with the content of the specification, and in order to make the above and other purposes, features and advantages of this application more obvious and understandable. , The specific implementations of this application are cited below.

Description of the drawings

The drawings described here are used to provide a further understanding of the application and constitute a part of the application. The exemplary embodiments and descriptions of the application are used to explain the application, and do not constitute an improper limitation of the application. In the attached picture:

Figure 1 is a schematic diagram of the coating principle of a tubular PECVD coating system in the prior art;

FIG. 2 is a schematic diagram of the structure of a slide carrier taking a graphite boat as an example in the prior art;

FIG. 3 is a diagram of the state of coating a silicon wafer in a plasma atmosphere in the prior art;

4 is a schematic diagram of a partial structure of an electrode sheet provided by an embodiment of the application;

FIG. 5 is a schematic diagram of a first structure of a slide unit in an embodiment of the application;

FIG. 6 is a schematic diagram of a state in which the electrode sheet provided by an embodiment of the application is applied to PECVD coating;

FIG. 7 is a cross-sectional view of the slide unit in the embodiment of the application;

FIG. 8 is a schematic diagram of the second structure of the slide-carrying unit in the embodiment of the application;

FIG. 9 is a schematic diagram of a third structure of the slide-carrying unit in an embodiment of the application;

FIG. 10 is a schematic diagram 1 of the relative position of the grooves formed on the two surfaces of the slide unit in the embodiment of the application; FIG.

11 is a second schematic diagram of the relative position of the grooves formed on the two surfaces of the slide unit in the embodiment of the application;

FIG. 12 is a schematic diagram of the first structural relationship between two adjacent slide units in an embodiment of the application; FIG.

FIG. 13 is a schematic diagram of a second structural relationship between two adjacent slide units in an embodiment of the application;

14 is a schematic diagram of a connecting structure of multiple tanks in an embodiment of the application;

15 is a schematic diagram of a first structure in which a plurality of tanks are distributed at intervals in an embodiment of the application;

FIG. 16 is a schematic diagram of a second structure in which a plurality of grooves are distributed at intervals in an embodiment of the application.

Specific embodiment

The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments.

Various schematic diagrams of the embodiments of the present application are shown in the drawings, which are not drawn to scale. Among them, for the purpose of clarity, some details are enlarged, and some details may be omitted. The shapes of the various regions and layers shown in the figure and the relative size and positional relationship between them are only exemplary. In practice, there may be deviations due to manufacturing tolerances or technical limitations. In actual needs, areas/layers with different shapes, sizes, and relative positions can be designed in addition.

Hereinafter, the terms “first”, “second”, etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined with "first", "second", etc. may explicitly or implicitly include one or more of these features. In the description of this application, unless otherwise specified, "plurality" means two or more.

In addition, in this application, the azimuth terms such as "upper" and "lower" are defined relative to the directions in which the components in the drawings are schematically placed. It should be understood that these directional terms are relative concepts, which are used for relative description and clarification, and they can be changed correspondingly according to the changes in the orientation of the components in the drawings.

In this application, unless expressly stipulated and limited otherwise, the term "connected" should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or a whole; it can be a direct connection, or It can be indirectly connected through an intermediary.

The plasma enhanced chemical vapor deposition (Plasma Enhance Chemical Vapor Deposition, abbreviated as PECVD) system is a coating system composed of a parallel plate coating boat such as a graphite boat and a high-frequency plasma exciter. This coating system is often used in the manufacturing process of solar cells.

Figure 1 shows a schematic diagram of the coating principle of a tubular PECVD coating system in the prior art. As shown in FIG. 1, the PECVD coating system includes a tubular PECVD equipment 100 and a graphite boat 200 for loading substrates such as silicon wafers. The tubular PECVD equipment 100 includes a PECVD tubular furnace 110 and a radio frequency generator 120. The PECVD tube furnace 110 includes a resistance furnace 111 and a quartz tube 112. The resistance furnace 111 is located outside the quartz tube 112 for heating the quartz tube 112. The quartz tube 112 is provided with an air inlet 1121 and an air outlet 1122. The cavity 1120 in the quartz tube 112 is used to accommodate the graphite boat 200.

FIG. 2 shows a schematic diagram of the structure of a slide carrier taking a graphite boat as an example in the prior art. As shown in FIG. 2, the graphite boat includes 10 upper electrode sheets 201, 11 lower electrode sheets 202 and connecting components. The 10 upper electrode sheets 201 and the 11 lower electrode sheets 202 are all distributed along the direction indicated by arrow A in FIG. 2, and there is an upper electrode sheet 201 between two adjacent lower electrode sheets 202. Each upper electrode sheet 201 and each lower electrode sheet 202 extend along the direction indicated by arrow B in FIG. 2.

When the 11 lower electrode sheets 202 are marked along the direction indicated by arrow A in FIG. 2, the 11 lower motor sheets include the first lower electrode sheet, the second lower electrode sheet,..., the tenth lower electrode sheet and Tenth, the electrode sheet. Among the 11 lower electrode sheets, there is one upper electrode sheet 201 between two adjacent lower electrode sheets. In terms of positional relationship, the first bottom electrode sheet and the tenth bottom electrode sheet are located outside the graphite boat, and the second bottom electrode sheet to the tenth bottom electrode sheet and all the upper electrode sheets 201 are located inside the graphite boat. At this time, the first lower electrode sheet and the second lower electrode sheet are defined as the outer sheets of the graphite boat.

As shown in Figure 2, the above-mentioned connecting assembly includes 7 upper end ceramic screws 203, 7 lower end ceramic screws 204, 1 first front end graphite screw 205, 1 second front end graphite screw 206, and 1 first rear end graphite screw 207 and a second rear end graphite screw 208.

As shown in Fig. 2, the 7 upper ceramic screws 203 are distributed along the direction indicated by arrow B in Fig. 2. Each upper ceramic screw 203 insulates and fixes the upper ends of the 10 upper electrode sheets 201 and the upper ends of the 11 lower electrode sheets 202 Together. The seven lower ceramic screws 204 are distributed along the direction indicated by the arrow B in FIG. 2, and each lower ceramic screw 204 insulates and fixes the lower ends of the 10 upper electrode sheets 201 and the lower ends of the 11 lower electrode sheets 202 together. When there is an upper electrode sheet 201 between two adjacent lower electrode sheets 202, the upper electrode sheet 201 and the lower electrode sheet 202 are adjacent. In order to ensure the insulation between the adjacent upper electrode sheet 201 and the lower electrode sheet 202, an insulating sleeve such as a ceramic sleeve or a rubber sleeve can be added between the adjacent upper electrode sheet 201 and the lower electrode sheet 202 to improve the upper electrode sheet 201 and the lower electrode sheet 202. The insulation of the electrode sheet 202.

As shown in FIG. 2, the front ends of the 10 upper electrode sheets 201 and the front ends of the 11 lower electrode sheets 202 are all located at the front end of the graphite boat, and the rear ends of the 10 upper electrode sheets 201 and the rear ends of the 11 lower electrode sheets 202 are located at the front end of the graphite boat. They are all located at the back end of the graphite boat. The front ends of the ten upper electrode sheets 201 are fixed together by a first front-end graphite screw 205, and the rear ends of the ten upper electrode sheets 201 are fixed together by a first rear-end graphite screw 207. The front ends of the 11 lower electrode sheets 202 are fixed together by a second front end graphite screw 206, and the rear ends of the 11 lower electrode sheets 202 are fixed together by a second rear end graphite screw 208.

As shown in FIG. 2, the above-mentioned connecting assembly further includes a plurality of first front end graphite blocks 209, a plurality of second front end graphite blocks 210, a plurality of first rear end graphite blocks 211 and a second rear end graphite block 212.

As shown in Figure 2, for the front end of the graphite boat, each first front end graphite screw 205 is sleeved with a plurality of first front end graphite blocks 209, and it is ensured that there is a first front end between the front ends of two adjacent upper electrode sheets 201. A front end graphite block 209. Each second front end graphite screw 206 is sleeved with a plurality of second front end graphite blocks 210, and it is ensured that there is a second front end graphite block 210 between the front ends of two adjacent lower electrode sheets 202.

As shown in FIG. 2, for the rear end of the graphite boat, each first rear end graphite screw 207 is sleeved with a plurality of first rear end graphite blocks 211, and it is ensured that the rear ends of two adjacent upper electrode sheets 201 are separated from each other. There is a first rear end graphite block 211 in the room. Each second rear graphite screw 208 is sleeved with a plurality of second rear graphite blocks 212, and it is ensured that there is a second rear graphite block 212 between the rear ends of two adjacent lower electrode sheets 202.

As shown in FIG. 2, one of the plurality of first front-end graphite blocks 209 is provided with an upper electrode hole (not shown in FIG. 2) for inserting the upper electrode rod. One of the plurality of first front-end graphite blocks 209 is provided with a lower electrode hole (not shown in FIG. 2) for connecting the lower electrode rod. In practical applications, the front end of the graphite boat is close to the furnace door 1123 of the quartz tube 112 shown in FIG. 1 to facilitate the insertion of the upper electrode rod into the upper electrode hole and the lower electrode rod into the lower electrode hole.

Fig. 3 is a diagram showing the state of film coating of a silicon wafer in a plasma atmosphere in the prior art. As shown in FIG. 3, a first silicon wafer 301 is hung on the surface of the upper electrode sheet 201 through a first clamping point axis a, and a second silicon wafer 302 is hung on the surface of the lower electrode sheet 202 through a second clamping point axis b. The surface of the upper electrode sheet 201 and the surface of the lower electrode sheet 202 are arranged opposite to each other, so that the first silicon sheet 301 and the second silicon sheet 302 are located between the upper electrode sheet 201 and the lower electrode sheet 202 in terms of spatial position.

In practical applications, when the first silicon wafer 301 is hung on the surface of the upper electrode sheet 201 through the first pinch point axis a, there is a certain gap between the edge of the first silicon wafer 301 and the upper electrode sheet 201, and the first silicon wafer 201 The edge of the sheet 301 is in contact with the upper electrode sheet 201 at some positions.

When the second silicon chip 302 is hung on the surface of the bottom electrode sheet 202 through the second pinch point axis b, some positions on the edge of the second silicon chip 302 have a certain gap with the bottom electrode sheet 202, and some positions on the edge of the second silicon chip 302 are in contact with the bottom electrode sheet 202. The bottom electrode sheet 202 is in contact.

As shown in Figures 1 to 3, when PECVD is used to coat the surface of a silicon wafer, the graphite boat 200 is fed into the quartz tube 112 of the PECVD tube furnace 110, and the air in the cavity 1120 is exhausted through the exhaust port 1122 to make the cavity The body 1120 is evacuated, and then silane (SiH ₄ ) and ammonia (NH ₃ ) are introduced into the cavity 1120 through the air inlet 1121. At this time, the resistance furnace 111 is used to heat the quartz tube 112, and the pressure of the cavity 1120 in the quartz tube 112 is controlled so that the environment in the cavity 1120 reaches the high temperature and high pressure environment required for coating. At the same time, the radio frequency generator 120 applies radio frequency voltages of different polarities to the upper electrode sheet 201 and the lower electrode sheet 202 contained in the graphite boat 200. Since the first silicon wafer 301 and the second silicon wafer 302 have good electrical conductivity at high temperatures, under the conditions of high temperature and high pressure, the upper electrode sheet 201 can introduce the RF voltage to the first silicon wafer 301, and the lower electrode sheet 202 can The radio frequency voltage is introduced into the second silicon wafer 302. That is to say, when the radio frequency generator 120 applies radio frequency voltages of different polarities to the upper electrode sheet 201 and the lower electrode sheet 202 contained in the graphite boat 200, the first silicon wafer 301 and the second silicon wafer 302 can be used for coating. The electrodes make a relatively uniform electric field PSA formed between the first silicon wafer 301 and the second silicon wafer 302. At this time, silane and ammonia are ionized into NH bond plasma and Si-H bond plasma under the action of an electric field, and the silicon nitride formed after the reaction of the two is gradually deposited on the surface of the first silicon wafer 301 and the surface of the second silicon wafer 302 , Thereby forming a silicon nitride film on the surface of the silicon wafer.

In addition, as shown in FIG. 3, since some positions on the edge of the first silicon wafer 301 have a certain gap with the upper electrode sheet 201, and some positions on the edge of the second silicon wafer 302 have a certain gap with the lower electrode sheet 202, the silicon nitride is not only Deposited on the surface of the silicon wafer away from the electrode (the front side of the silicon wafer), and the silicon wafer that is also deposited on the edge of the surface (the backside of the silicon wafer) close to the electrode, causes the edge of the silicon nitride deposited silicon wafer to have an abnormal color (such as whitening), This phenomenon is called the winding-plating phenomenon. When the thickness of the silicon nitride deposited on the surface edge of the silicon wafer (the coating thickness) is 1mm, it needs to be reworked and re-plated, which will affect the coating yield of the silicon wafer. It is understandable that when the silicon wafer is plated around, while the silicon nitride is plated around the edge of the silicon wafer near the surface of the electrode (hereinafter referred to as the back of the silicon wafer), it will also deposit too much on the silicon wafer away from the edge. The edge of the surface of the electrode sheet (hereinafter referred to as the front surface of the silicon chip) (compared with other areas of the surface of the silicon chip away from the electrode sheet), causes the color of the front edge of the silicon chip to be abnormal.

The inventor conducted research on the above problems and found that reducing the electric field intensity at the edge of the silicon wafer can effectively suppress the plating around the edge of the silicon wafer, so as to reduce the thickness of silicon nitride deposited on the edge of the silicon wafer near the surface of the electrode wafer. Based on this, the embodiment of the present application provides an electrode sheet. The electrode sheet can be an electrode sheet made of any conductive material, and is not limited to the electrode sheet contained in the graphite boat mentioned above. This kind of electrode sheet can be used in the coating process of various substrates such as silicon wafers. The coating method is not limited to this PECVD, but can also be a coating method close to the principle of PECVD.

FIG. 4 shows a schematic diagram of a partial structure of an electrode sheet provided by an embodiment of the present application. As shown in FIG. 4, the electrode sheet 400 provided by the embodiment of the present application includes at least one sheet-carrying unit 400U. Each carrier unit 400U can be used to mount a substrate such as a silicon wafer.

FIG. 5 shows a schematic diagram of the first structure of the slide unit in the embodiment of the present application. As shown in FIG. 5, when the area of each slide unit 400U should be greater than the area of the substrate to be mounted. At least one surface of each slide unit 400U has a slide area U1 and a peripheral area U2. The peripheral area U2 is located in the circumferential direction of the slide area U1. Here, the slide area U1 is defined as the area where the surface of the slide unit 400U is covered by the orthographic projection of the silicon wafer or other substrate when the substrate such as a silicon wafer is hung on the slide unit 400U. The peripheral area U2 is defined as the area where the surface of the wafer carrier unit 400U is not covered by the orthographic projection of the wafer carrier unit 400U when a substrate such as a silicon wafer is hung on the wafer carrier unit 400U.

As shown in FIG. 5, at least one surface of each slide unit 400U is provided with at least one tank 402 for suppressing the plating phenomenon. At least one trough body 402 is located in the peripheral area U2. It should be understood that here at least one slot 402 is located in the peripheral area U2 means that all the slots 402 formed on at least one surface of each chip carrier unit 400U are located in the peripheral area U2.

FIG. 6 shows a schematic diagram of the state in which the electrode sheet provided by the embodiment of the present application is applied to PECVD coating. As shown in FIG. 6, both the first electrode sheet 400A and the second electrode sheet 400B are the electrode sheets shown in FIG. 4. In order to facilitate the description of the principle of coating, it is assumed that both the first electrode sheet 400A and the second electrode sheet 400B include a chip carrier unit 400U. The surface of the first electrode sheet 400A (or the slide unit 400U included in the first electrode sheet 400A) and the surface of the second electrode sheet 400B (or the slide unit 400U included in the second electrode sheet 400B) both have a slide area U1 and the peripheral area U2. The surface of the first electrode sheet 400A is provided with a first groove body 402A located in the peripheral area U2, and the surface of the second electrode sheet 400B is provided with a second groove body 402B located in the peripheral area U2. The orthographic projection of the first groove body 402A shown in FIG. 6 on the surface of the second electrode sheet 400B is the same as that of the second groove body 402B.

As shown in FIG. 6, when the first silicon wafer 301 and the second silicon wafer 302 (but not limited to this silicon wafer) are PECVD coated with the first electrode wafer 400A and the second electrode wafer 400B, the first electrode wafer 400A The surface is opposite to the surface of the second electrode sheet 400B. The surface of the first electrode sheet 400A is hung with a first silicon wafer 301 located in the wafer carrier area U1, and the surface of the second electrode sheet 400B is hung with a first silicon wafer located in the wafer area U1. Two silicon wafers 302. The distance between the first silicon wafer 301 hung on the first electrode sheet 400A and the second silicon wafer 302 hung on the second electrode sheet 400B is R ₁ , and the first groove body is opened on the surface of the first electrode sheet 400A The distance between the groove bottom of the 402A and the groove bottom of the second groove body 402B opened on the surface of the second electrode sheet 400B is R ₂ .

Those skilled in the art can know that when the current is energized, a uniform electric field can be formed between the two opposed electrodes. Electric field force

Electric field strength

Among them, F is the electric field force, k is the electrostatic constant, k=9.0×10 ⁹ N·m ² /C ² , Q is the charge amount of one of the two counter electrodes, and q is the two counter electrodes The charge amount of the other electrode included, q ₀ is the charge amount of the plasma, and R is the distance between the two opposite electrodes. It can be seen from the electric field force formula and the electric field strength formula that the distance R between the two opposite electrodes is inversely proportional to the electric field force and the electric field strength. When the distance R between the two opposed electrodes decreases, the electric field force and the electric field strength increase. When the distance R between the two opposed electrodes increases, the electric field force and the electric field strength decrease.

Based on the conclusion that the distance R between the two counter electrodes is inversely proportional to the electric field force and the electric field strength, as shown in FIG. 6, when all the grooves 402 opened on at least one surface of each slide unit 400U are located in the peripheral area At U2, since R ₁ <R ₂ , the intensity of the electric field cPSA in the tank area is lower than the intensity of the electric field zPSA in the slide area. Wherein, the electric field cPSA in the slot area refers to the electric field between the first slot 402A opened by the first electrode sheet 400A and the second slot 402B opened by the second electrode sheet 400B. The electric field zPSA in the slide area refers to the electric field between the first silicon wafer 301 and the second silicon wafer 302.

As shown in Figures 4-6, when the electric field cPSA in the tank area is lower than the intensity of the electric field zPSA in the slide area, although the electric field zPSA in the slide area is affected by the electric field cPSA in the tank area, the influence is relatively small in the tank area. Under the action of the electric field cPSA, the fringe electric field intensity of the electric field zPSA in the slide area is reduced, but the electric field intensity in the area farther from the tank 402 is uniform. Therefore, under the same length of time, if the winding plating is not considered The amount of silicon nitride deposited on the edge of the silicon wafer is relatively small per unit area of silicon nitride on the edge of the front surface of the first silicon wafer 301 per unit time (compared to other areas on the front surface of the first silicon wafer 301). At this time, the thickness of the silicon nitride deposited on the front edge of the first silicon wafer 301 is insufficient.

Similarly, the amount of silicon nitride deposited per unit area on the edge of the front surface of the second silicon wafer 302 per unit time is relatively small (relative to other areas on the front surface of the second silicon wafer 302). At this time, the thickness of the silicon nitride deposited on the front edge of the second silicon wafer 302 is insufficient.

As shown in FIGS. 4 to 6, in practical applications, some positions on the edge of the first silicon wafer 301 have a certain gap with the first electrode sheet 400A, so that the first silicon wafer 301 will still be plated. In this case, due to the influence of the electric field cPSA in the tank area, the fringe electric field intensity of the electric field zPSA in the slide area is reduced, which is beneficial to reduce the edge plating degree of the first silicon wafer 301.

For example, when the degree of plating around the edge of the first silicon wafer 301 is reduced, not only the thickness of the silicon nitride deposited on the back edge of the first silicon wafer 301 is reduced, but also the thickness of the silicon nitride deposited on the front edge of the first silicon wafer 301 is also reduced. It can be seen that when the groove 402 opened on the surface of the wafer carrier unit 400U is located in the peripheral area U2, the plating phenomenon still existing on the edge of the first silicon wafer 301 can be used to increase the deposition of the front surface of the first silicon wafer 301 to a certain extent. The amount of silicon nitride deposited at the edge can compensate for the insufficient thickness of silicon nitride at the front edge of the first silicon wafer 301 due to the difference in electric field intensity (the electric field cPSA intensity in the tank area is less than the electric field zPSA intensity in the carrier area), which makes the second The silicon nitride deposited on the front surface of the silicon wafer 301 has a uniform thickness.

As shown in FIGS. 4 to 6, in practical applications, some positions of the edge of the second silicon wafer 302 have a certain gap with the second electrode piece 400B, so that the edge of the second silicon wafer 302 still has a plating around. In this case, due to the influence of the electric field cPSA in the tank area, the fringe electric field intensity of the electric field zPSA in the carrier area is reduced, which is beneficial to reduce the edge coating degree of the second silicon wafer 302.

For example, when the degree of plating around the edge of the second silicon wafer 302 is reduced, not only the thickness of the silicon nitride deposited on the back edge of the second silicon wafer 302 is reduced, but also the thickness of the silicon nitride deposited on the front edge of the second silicon wafer 302 will also be reduced. It can be seen that when the groove 402 opened on the surface of the wafer carrier unit 400U is located in the peripheral area U2, the plating phenomenon still existing on the edge of the second silicon wafer 302 can be used to increase the deposition of the front surface of the second silicon wafer 302 to a certain extent. The amount of silicon nitride deposited on the edge can compensate for the insufficient thickness of silicon nitride at the front edge of the second silicon wafer 302 caused by the difference in electric field intensity (the electric field cPSA intensity in the tank area is less than the electric field zPSA intensity in the carrier area), so that the second The silicon nitride deposited on the front surface of the silicon wafer 302 has a uniform thickness.

Tests have proved that the thickness of silicon nitride (coating thickness) deposited on the first silicon wafer 301 near the surface edge of the first electrode piece 400A is less than 1mm, and the second silicon wafer 302 is deposited near the surface edge of the second electrode piece 400B. The silicon thickness (the coating thickness) is less than 1mm, and the color uniformity of the silicon nitride film formed on the surface of the first silicon wafer 301 and the surface of the second silicon wafer 302 is relatively good. Therefore, the first silicon wafer 301 and the second silicon wafer 302 There is no need to rework and re-coat after coating. It can be seen that when the PECVD method is used to coat silicon wafers, the tank 402 can be used to adjust the cPSA intensity of the electric field in the tank area, and the fringe electric field intensity of the electric field zPSA in the carrier area can be appropriately adjusted while the plating phenomenon still exists. In order to ensure that the edge color of the silicon wafer after coating is close to normal or normal, thereby improving the coating yield of the silicon wafer and improving the production efficiency of solar cells.

It can be seen from the above that, as shown in FIGS. 4 to 6, in the electrode sheet 400 provided by the embodiment of the present application, at least one groove 402 is opened on at least one surface of each sheet carrier unit 400U, which not only makes the electrode sheet lighter It is also possible that when the two electrode sheets 400 are arranged oppositely, the groove 402 contained in at least one electrode sheet faces the surface of the other electrode sheet 400, which can ensure that the distance between the areas where the groove bodies 402 are opened on the two electrode sheets is relatively large ( (Compared to the existing way of not opening a tank). Based on this, when the electrode sheet provided by the embodiment of the present application is applied to a carrier such as a graphite boat, a substrate (such as a silicon wafer) that needs to be filmed is hung on the electrode sheet 400 contained in the carrier and controlled The substrate is hung on the slide area U1 provided on the surface of the slot 402 of the slide unit 400U. On this basis, when PECVD is used to form a film on the surface of the substrate, the electric field cPSA in the tank area can suppress the plating phenomenon to a certain extent, so that the surface of the substrate where the two electrode plates are hung can form a uniform thickness film, thereby It alleviates the abnormal color of the edge of the silicon wafer caused by the winding plating during the surface film formation process, thereby improving the coating yield of the silicon wafer and the production efficiency of the solar cell. In addition, when the electrode sheet 400 provided by the embodiment of the present application is applied to silicon wafer coating, the coating yield of the silicon wafer can be improved, and the problems of rework and cell degradation caused by severe winding plating can be reduced.

It should be noted that, as shown in FIG. 4, each slide unit 400U included in the electrode sheet 400 is provided with a slide window 401 located in the slide area U1. The slide window 401 not only helps to reduce the weight of the entire electrode sheet 400, but also reduces the possibility that the slide unit 400U wears out substrates such as silicon wafers.

In addition, as shown in FIG. 4, each of the chip carrier units 400U included in the electrode sheet 400 is provided with at least two pinch point holes 403 that are matched with the pinch point axis. As shown in FIG. 5, when a substrate such as a silicon wafer is hung on the substrate area U1 on the surface of the chip carrier unit 400U, you can refer to FIG. 3 to have a built-in pinch point axis in each pinch point hole 403 to use the pinch point axis A substrate such as a silicon wafer is hung on the slide area U1 of the slide unit 400U. It should be understood that if the distance between the trough body 402 and the slide area U1 is extremely close, at least two of the clamping point holes 403 may overlap a part of the trough body 402. In addition, the pinch point axis can be conductive or non-conductive. When the card point axis is a conductive card point axis such as a graphite card point axis, the card point axis can not only support the silicon chip, but also can introduce the radio frequency current loaded into the electrode chip into the silicon chip, so that the two electrode chips can be hung. The electric field of the slide area formed between the set silicon wafers is more uniform and stable.

As a possible implementation, as shown in FIG. 5, on the same surface of each slide unit 400U, the distance between the outer edge of the slide area U1 and the outer edge of the peripheral area U2 (hereinafter referred to as the width of the peripheral area) is d In the same surface of each slide unit 400U, the distance between the side of the notch of the groove body 402 near the outer edge of the slide area U1 and the side near the outer edge of the peripheral area U2 (that is, the width of the notch of the groove body 402) Is d ₀ , on the same surface of each slide unit 400U, the distance between the side of the slot of the groove body 402 near the outer edge of the slide area U1 and the outer edge of the slide area U1 (hereinafter referred to as the transition area width) is d ₁ In the same surface of each slide unit 400U, the distance between the side of the slot of the groove body 402 near the outer edge of the peripheral area U2 and the outer edge of the peripheral area U2 (hereinafter referred to as the edge area width) is d ₂ .

Illustratively, FIG. 7 shows a cross-sectional view (a view formed by cutting along the thickness direction of the electrode sheet) of the slide unit in an embodiment of the present application. As shown in Fig. 7, the line segment L is composed of an inner line segment L ₁ , an outer line segment L ₂ and a slot line segment L ₀ . The line segment L is used to indicate the width d of the peripheral area. The inner line segment L1 is used to represent the transition area width d ₁ , the outer line segment L _{2 is} used to represent the edge area width d ₂ , and the slot line segment L _{0 is} used to represent the slot width d _{0 of the} slot body 402. Moreover, in order to ensure that the relationship d=d ₀ +d ₁ +d ₂ shown in Figure 5 is established, the inner line segment L ₁ , the outer line segment L ₂ and the slot line segment L ₀ shown in Fig. 7 should be located on the same straight line and form a line segment L.

In an optional manner, FIG. 8 shows a schematic diagram of a second structure of the slide unit in an embodiment of the present application. _{As shown in Figures 5 and 8, on the same surface of each slide unit 400U, the distance d 1} between the notch of the groove body 402 near the outer edge of the slide area U1 and the outer edge of the slide area U1 is greater than or equal to 0.

As shown in Figures 6 and 8, when d ₁ =0, the side of the slot of the tank 402 close to the outer edge of the slide area U1 has substantially coincided with the outer edge of the slide area U1, so that the tank area electric field cPSA It can be seamlessly superimposed with the electric field of the carrier area U1 to maximize the color abnormality of the edge of the silicon wafer caused by the electric field cPSA in the tank area, and improve the coating yield of the silicon wafer.

Exemplarily, as shown in FIG. 8, the electrode sheet 400 includes a slide unit 400U. A groove 402 is formed on the surface of the slide unit 400U. The inner line a1 shown in FIG. 5 is a side of the notch of the groove body 402 close to the outer edge of the slide area U1. It can be seen from FIGS. 5 and 8 that the inner line a1 coincides with the outer edge a2 of the slide area U1. _{The distance (ie, d 1} ) between the inner line a1 and the outer edge a2 of the slide area U1 is equal to zero.

As shown in Figures 5 and 6, when d ₁ >0, the slot of the tank 402 is at a certain distance from the outer edge of the slide area U1, so that the electric field cPSA of the tank body area and the electric field zPSA of the slide area The strength of the electric field (hereinafter referred to as the transition electric field gPSA) is jointly affected by the electric field cPSA in the tank area and the electric field zPSA in the carrier area. At this time, along the direction from the electric field zPSA in the slide area to the electric field cPSA in the tank area, the electric field intensity of the transitional electric field gPSA gradually increases. Therefore, the electrode sheet 400 provided by the embodiment of the present application can relieve the winding plating to a certain extent. The problem of abnormal color at the edge of silicon wafer can improve the coating yield of silicon wafers and other substrates.

Exemplarily, as shown in FIG. 5, the slide unit 400U can be regarded as an electrode sheet including one slide unit 400U. A groove 402 is formed on the surface of the slide unit 400U. The inner line a1 shown in FIG. 5 is a side of the notch of the groove body 402 close to the outer edge of the slide area U1. _{It can be seen from FIG. 5 that the distance (ie, d 1} ) between the inner line a1 and the outer edge a2 of the slide area U1 is greater than zero.

For example, as shown in Figs. 5 and 6, on the same surface of each slide unit 400U, the distance d ₁ between the inner line a1 and the outer edge a2 of the slide area U1 = 0.01 mm˜0.5 mm. For example: d ₁ =0.01mm, 0.5mm or 0.03mm. At this time, under the influence of the electric field cPSA in the tank area, the transition electric field gPSA mentioned above can effectively alleviate the problem of plating around the edge of the silicon wafer and other substrates caused by the high electric field intensity of the electric field zPSA in the carrier area, thereby further improving the silicon wafer Wait for the coating yield of the substrate.

In some cases, as shown in FIG. 5, on the same surface of each slide unit 400U, the distance between the side of the notch of the groove body 402 near the outer edge of the slide area U1 and the side near the outer edge of the peripheral area U2 (That is, the slot width of the slot body 402) d ₀ is 0.1mm-15mm. At this time, as shown in Figures 5 and 6, the cPSA field in the tank region can effectively alleviate the plating problem around the edges of substrates such as silicon wafers, and minimize the impact of excessively wide notches on the structural strength of the electrode plates.

In an optional manner, FIG. 9 shows a schematic diagram of a third structure of the slide unit in an embodiment of the present application. 5 and 9, the same surface of each slide element 400U, the notch groove 402 from the side near the outer edge of the outer edge of the peripheral region U2 and U2 d ₂ of the peripheral region is greater than or equal to 0 and Less than d, d is the distance between the outer edge of the slide area U1 and the outer edge of the peripheral area U2.

As shown in FIG. 9, when d ₂ =0, the side of the notch of the groove body 402 close to the outer edge of the peripheral area U2 has already overlapped with the outer edge of the peripheral area U2. At this time, the groove 402 provided on at least one surface of each slide unit 400U is substantially a notched groove.

Exemplarily, as shown in FIG. 5, the slide unit 400U can be regarded as an electrode sheet including one slide unit 400U. A groove 402 is formed on the surface of the slide unit 400U. The outer line b1 shown in FIG. 5 is the side of the notch of the groove body 402 close to the outer edge of the peripheral area U2. It can be seen from Fig. 5 and Fig. 9 that the outer line b1 coincides with the outer edge b2 of the peripheral area U2. _{The distance (ie, d 2} ) between the outer line b1 and the outer edge b2 of the peripheral area U2 is equal to zero.

As shown in FIG. 5, when 0<d ₂ <d, the side of the slot of the groove body 402 that is close to the outer edge of the peripheral area U2 is located in the peripheral area U2. At this time, the groove 402 provided on at least one surface of each slide unit 400U is substantially a groove.

Exemplarily, as shown in FIG. 5, the slide unit 400U can be regarded as an electrode sheet including one slide unit 400U. A groove 402 is formed on the surface of the slide unit 400U. The outer line b1 shown in FIG. 5 is the side of the notch of the groove body 402 close to the outer edge of the peripheral area U2. _{It can be seen from FIG. 5 that the distance (ie, d 2} ) between the outer line b1 and the outer edge b2 of the peripheral area U2 is greater than zero.

As a possible implementation manner, as shown in FIG. 6, when the electrode sheet provided by the embodiment of the present application is applied to PECVD coating, the first silicon sheet 301 and the second electrode sheet 400B are hung on the first electrode sheet 400A. under certain circumstances _a distance R between the second wafer 302 is hung, the surface of the first electrode tab 400A of the body defines a first groove 402A deeper surface of the first electrode tab 400A of the body defines a first groove 402A _{The distance R 2} between the groove bottom and the groove bottom of the second groove body 402B opened on the surface of the second electrode sheet 400B is greater.

It can be seen from the above that on the same surface of each slide unit 400U in FIG. 7, the deeper the depth D of each groove body 402 is in direct proportion to the ability of the groove body 402 to suppress the plating phenomenon.

Exemplarily, as shown in FIG. 7, on the same surface of each slide unit 400U, the depth D of each groove body 402 is less than the maximum thickness T of the peripheral area U2, so as to prevent the groove body 402 from penetrating the electrode sheet and affecting normal operation. Coating. It should be understood that since the peripheral area U2 is provided with the groove body 402, the minimum thickness area of the peripheral area U2 refers to the area where the groove body 402 is opened. Therefore, the peripheral area U2 has a maximum thickness and a minimum thickness. In addition, the maximum thickness T of the peripheral area U2 has an inseparable relationship with the shape and structure of the electrode sheet. Those skilled in the art can determine the maximum thickness of the peripheral area U2 according to the actual shape and structure of the electrode sheet. For example, when the electrode sheet is a plate-shaped electrode sheet, the maximum thickness T of the peripheral area U2 is the same as the thickness of the electrode sheet.

10 and 11 show schematic diagrams of the relative positions of the grooves provided on the two surfaces of the slide unit. As shown in FIG. 10 and FIG. 11, for the same slide unit 400U, it has a first surface M1 and a second surface M2 opposite to each other, and both surfaces can be used to mount substrates such as silicon wafers. And both the first surface M1 and the second surface M2 have a slide area U1 and a peripheral area U2. As for the definition of the slide area U1 and the peripheral area U2, reference may be made to the foregoing, which is not limited here. In order to alleviate the plating problem of the silicon wafers hanging on two surfaces, both surfaces of the same wafer carrier unit 400U are provided with grooves 402 located in the peripheral area U2.

FIG. 10 shows the first schematic diagram of the relative position of the grooves formed on the two surfaces of the slide unit in the embodiment of the present application. As shown in FIG. 10, in the slide unit 400U, if the orthographic projection of the groove 402 opened on the first surface M1 on the plane where the second surface M2 is located does not overlap with the groove 402 opened on the second surface M2, then It is only necessary to ensure that the depth D of the groove body 402 opened on the first surface and the depth D of the groove body 402 opened on the second surface M2 are smaller than the maximum thickness T of the peripheral area U2 to prevent the groove body 402 from penetrating the electrode sheet. For example, when the electrode sheet is a plate-shaped electrode sheet, and the thickness of the electrode sheet is 2.0 cm, on the same surface of each slide unit 400U, the depth D of each groove body 402 is greater than or equal to 0.1 mm and less than 2.0 cm.

FIG. 11 shows the second schematic diagram of the relative position of the grooves formed on the two surfaces of the slide unit in the embodiment of the present application. As shown in FIG. 11, in the slide unit 400U, if the orthographic projection of the slot 402 opened on the first surface M1 on the plane of the second surface M2 coincides with the slot 402 opened on the second surface M2, then each slide On the same surface of the unit 400U, the depth D of each groove body 402 is less than half of the maximum thickness T of the peripheral area U2. At this time, the grooves 402 provided on the two surfaces of the same slide unit 400U will not penetrate, so as to ensure that when the slide unit 400U is mounted with silicon wafers, the slide area of the slide unit 400U is not easy to The pulling action of the silicon wafer is damaged, so that when the surface of the substrate such as the silicon wafer is normal, the problem of plating around the edge of the substrate such as the silicon wafer is alleviated.

For example, as shown in FIGS. 4 and 7, when the electrode sheet 400 is a plate-shaped electrode sheet and the thickness of the electrode sheet 400 is 2 cm, if the positions of the slots 402 opened on the two surfaces of the slide unit are the same. At this time, on the same surface of each slide unit 400U, the depth D of each groove body 402 is greater than or equal to 0.1 mm and less than 1.0 cm. At this time, the groove body 402 opened at the same position on the two surfaces of the electrode sheet 400 will not penetrate.

As shown in FIG. 11, when the depth D of each groove body 402 is less than one-half of the maximum thickness T of the peripheral area U2, if the groove bodies 402 opened on the two surfaces of the same slide unit 400U are too deep, then Under the condition of force, in the slide unit 400U shown in FIG. 11, the barrier 404 between the grooves 402 opened on the first surface M1 and the second surface M2 is easy to crack or even fall off, thereby affecting the coating effect .

Exemplarily, the depth D of each groove body 402 may be 0.3 mm to 0.7 mm. For example, the depth D of each trough body 402 can be 0.3 mm, 0.7 mm or 0.5 mm. In this case, each tank body 402 can be plated normally while ensuring the structural strength of the electrode sheet, and effectively suppress the winding plating problem.

Exemplarily, as shown in FIGS. 5 and 7, when the distance between the inner line a1 and the outer line b1 (that is, the notch width of the groove body 402) d ₀ =6 mm, the depth D of the groove body 402 is 5 mm, and the inner line segment a1 _{When the distance d 1} from the outer edge a2 of the slide area U1 is equal to 0.01 mm, the groove body 402 will not have an excessive influence on the structural strength of the electrode sheet, and it can also effectively suppress the edge plating phenomenon of silicon wafers and other substrates.

As a possible implementation manner, FIGS. 12 and 13 show schematic diagrams of two structural relationships between two adjacent slide units in an embodiment of the present application. As shown in Figures 12 and 13, when at least one slide unit 400U includes at least two slide units 400U, the grooves 402 opened on the same surface of two adjacent slide units 400U are connected as a whole to further reduce The weight of the electrode sheet 400.

As a possible implementation manner, as shown in FIG. 5, at least one groove body 402 includes an annular groove body. The annular groove is arranged around the circumference of the slide area U1. The annular groove body can be an annular groove or an annular notched groove, of course, it can also be other groove types not listed. At this time, the entire slide area U1 is surrounded by the ring-shaped groove, so that the ring-shaped groove can alleviate the problem of plating around the edges of the silicon wafer and other substrates in the circumferential direction during the film formation process. Here, the annular groove body is a groove body in a broad sense, and it can be not only an annular groove body, a regular polygonal annular groove body or an irregular polygonal annular groove body. The regular polygonal annular trough means that the shape enclosed by the direction of the annular trough is a regular polygon, and the regular polygon can be a regular polygon such as a triangle, a rectangle, a square, and a regular hexagon. Irregular polygonal annular groove means that the shape enclosed by the direction of the annular groove is an irregular polygon. The choice of the shape of the annular groove can be determined according to the shape of the slide area U1. When the shape of the annular groove is the same as the shape of the carrier area U1, the smaller the size difference between the two, the closer the annular groove is to the carrier area U1, and the annular groove prevents the edge of the substrate such as silicon wafers from wrapping around. The effect of the plating phenomenon is also better.

Exemplarily, FIG. 12 shows a schematic diagram of a first structural relationship between two adjacent slide units in an embodiment of the present application. As shown in FIG. 12, when the grooves 402 opened on the same surface of two adjacent slide units 400U are annular grooves, the grooves 402 provided on the same surface of two adjacent slide units 400U are connected to form After being integrated, the connected groove bodies 402 are all displayed in the form of grooves as shown in FIG. 12.

FIG. 13 shows a schematic diagram of a second structure relationship between two adjacent slide units in an embodiment of the present application. As shown in FIG. 13, when the grooves 402 opened on the same surface of two adjacent slide units 400U are annular notched grooves, the grooves 402 opened on the same surface of two adjacent slide units 400U are connected to form After being integrated, the connected groove bodies 402 are all displayed in the form of notched grooves as shown in FIG. 13.

As a possible implementation manner, the same surface of the slide unit 400U shown in FIGS. 14 to 16. The at least one tank 402 includes a plurality of tanks. The multiple grooves 402 are arranged around the circumference of the slide area U1, so that during the surface film formation process, the multiple grooves 402 can alleviate the plating problem at multiple locations on the edge of the substrate.

In an example, FIG. 14 shows a schematic diagram of a communication structure of a plurality of slots provided in a slide unit in an embodiment of the present application. As shown in FIG. 14, for the same surface of the same slide unit 400U, a plurality of trough bodies 402 are connected as a whole.

For example, two adjacent groove bodies 402 are connected through a communicating groove 405 with a relatively small opening (relative to the groove width of the groove body 402). For another example, as shown in FIG. 5, two adjacent tank bodies 402 can be directly joined together to realize that a plurality of tank bodies 402 communicate with each other. At this time, the integrated tank body 402 can be regarded as the annular tank body 402 described above (as shown in FIG. 5, FIG. 8 or FIG. 9).

In another example, FIG. 15 shows a first structural schematic diagram in which a plurality of groove bodies are distributed at intervals in an embodiment of the present application. FIG. 16 shows a schematic diagram of a second structure in which a plurality of slots are distributed at intervals in an embodiment of the present application. As shown in FIGS. 15 and 16, for the same surface of the same slide unit 400U, there is a space between two adjacent grooves 402. At this time, in the process of forming a film on the surface, the multiple grooves 402 can alleviate the plating problem at multiple locations on the edge of the substrate such as a silicon wafer.

As shown in Figure 15, from the perspective of the trough body direction, when there is a gap between two adjacent trough bodies 402, each trough body 402 is independent. As for the trough body 402, the trough body 402 can be a straight groove. The body, the curve goes towards the trough body or the broken line goes towards the trough body. The curved trough body can be arc-directed trough body or wavy-directed trough body.

As shown in Figure 5, Figure 7, Figure 8 and Figure 16, for the same surface of the same slide unit 400U, whether at least one tank 402 includes an annular tank or a plurality of tanks 402, from the perspective of the groove shape In other words, all of these grooves can be notched grooves or grooves. The notched groove here refers to a notched groove with a notched surface. In addition, the groove shapes of the plurality of groove bodies 402 are the same or partly the same. Of course, the groove shapes of multiple tanks are different.

For example, in FIG. 16, a plurality of grooves 402 are arranged around the circumference of the slide area. As shown in FIG. 16, from the groove type, some groove bodies 402 are grooves, and some groove bodies 402 are notched grooves. From the top of the trough direction, some trough bodies 402 are linearly oriented trough bodies, and some trough bodies 402 are oriented trough bodies at right angles.

The embodiment of the present application also provides a slide carrier. The slide carrier includes at least one electrode pad described in the above embodiment.

Compared with the prior art, the beneficial effects of the slide carrier provided in the embodiments of the present application are the same as the beneficial effects of the electrode sheets described in the foregoing embodiments, and will not be repeated here.

In practical applications, the above-mentioned slide holder may be a graphite boat or a slide holder of other materials, as long as at least one of the plurality of electrode plates used therein is the electrode plate described in the above embodiment.

The embodiment of the present application also provides a coating system. The coating system includes a coating equipment and the slide carrier described in the above embodiments. The coating equipment has a coating chamber for coating. When the coating system is in the coating state, the film carrier is located in the coating chamber.

Compared with the prior art, the beneficial effects of the coating system provided by the embodiments of the present application are the same as the beneficial effects of the electrode plates described in the foregoing embodiments, and will not be repeated here.

In practical applications, the above-mentioned coating system can refer to the coating system shown in FIG. 1. The coating equipment can be the PECVD coating equipment shown in FIG. 1. The coating chamber can be a quartz tube as shown in Fig. 1, and the carrier is located in the quartz tube. Of course, the coating chamber can also be other pressure-resistant tubes with good thermal conductivity, which will not be introduced here. As for the PECVD coating equipment, please refer to the previous description.

In the description of the foregoing embodiments, specific features, structures, materials, or characteristics may be combined in any one or more embodiments or examples in an appropriate manner.

The above are only specific implementations of this application, but the protection scope of this application is not limited to this. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed in this application. Should be covered within the scope of protection of this application. Therefore, the protection scope of this application should be subject to the protection scope of the claims.

Claims (10)

1. An electrode sheet, characterized in that it comprises:

   At least one slide unit, at least one surface of each slide unit has a slide area and a peripheral area, and the peripheral area is located in a circumferential direction of the slide area;

   At least one groove for suppressing the plating phenomenon is opened on at least one surface of each of the slide units, and the at least one groove is located in the peripheral area.
2. The electrode sheet according to claim 1, wherein on the same surface of each of the slide units, the notch of the groove body is close to the outer edge of the slide area and the outer edge of the slide area. The edge distance d _{1 is} greater than or equal to 0; and/or,

   _{On the same surface of each of the slide units, the distance d 2} between the side of the slot of the groove near the outer edge of the peripheral area and the outer edge of the peripheral area is greater than or equal to 0 and less than d, where d is the The distance between the outer edge of the slide area and the outer edge of the peripheral area.
3. The electrode sheet according to claim 1, wherein, on the same surface of each of the slide units, the distance between the outer edge of the slide area and the outer edge of the peripheral area is d, d=d ₀ + d ₁ + d ₂ , d ₀ is the distance between the side of the notch of the groove body near the outer edge of _{the slide area and the side near the outer edge of the peripheral area, and d 1} is the distance of each slide unit In the same surface, the distance between the side of the slot of the groove body near the outer edge of the slide area and the outer edge of the slide area, d ₂ is the same surface of each slide unit, the groove body The side of the notch near the outer edge of the peripheral area is at a distance from the outer edge of the peripheral area.
4. The electrode sheet according to claim 1, wherein, on the same surface of each of the slide units, the notch of the groove body is close to the slide area at a distance from the outer edge of the slide area d ₁ =0.01mm～0.5mm; and/or,

   _{On the same surface of each of the slide units, the distance d 0} between the side of the notch of the groove body close to the outer edge of the slide area and the side close to the outer edge of the peripheral area is 0.1mm-15mm.
5. The electrode sheet according to claim 1, wherein in the same surface of each of the slide units, the depth D of each of the grooves is less than the maximum thickness T of the peripheral area; or,

   On the same surface of each slide unit, the depth D of each groove is less than half of the maximum thickness T of the peripheral area.
6. The electrode sheet according to any one of claims 1 to 5, wherein the at least one slide unit includes at least two slide units; grooves formed on the same surface of two adjacent slide units The body becomes one; or,

   The at least one groove body includes an annular groove body, and the annular groove body is arranged around the circumference of the slide area.
7. The electrode sheet according to any one of claims 1 to 5, wherein the at least one groove body comprises a plurality of groove bodies, and the plurality of groove bodies are arranged around the circumference of the carrier region.
8. 8. The electrode sheet according to claim 7, wherein at least one of the plurality of groove bodies is a groove or a notch groove.
9. A slide carrier, characterized by comprising at least one electrode sheet according to any one of claims 1-8.
10. A coating system, characterized by comprising a coating equipment and the slide carrier according to claim 9, the coating equipment having a coating cavity for coating;

    When the coating system is in the coating state, the slide carrier is located in the coating cavity.

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