WO2021143583A1 - Packaging film layer, display screen, and electronic device - Google Patents

Packaging film layer, display screen, and electronic device Download PDF

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Publication number
WO2021143583A1
WO2021143583A1 PCT/CN2021/070344 CN2021070344W WO2021143583A1 WO 2021143583 A1 WO2021143583 A1 WO 2021143583A1 CN 2021070344 W CN2021070344 W CN 2021070344W WO 2021143583 A1 WO2021143583 A1 WO 2021143583A1
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WO
WIPO (PCT)
Prior art keywords
layer
refractive index
transition
silicon
packaging film
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PCT/CN2021/070344
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French (fr)
Chinese (zh)
Inventor
贾玉虎
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Oppo广东移动通信有限公司
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Publication of WO2021143583A1 publication Critical patent/WO2021143583A1/en

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65OLEDs integrated with inorganic image sensors

Definitions

  • This application relates to packaging technology, in particular to a packaging film layer, a display screen and an electronic device.
  • the display screen can be packaged with a packaging film layer.
  • the embodiments of the present application provide a packaging film layer, a display screen, and an electronic device.
  • the packaging film layer of the embodiment of the present application includes a first protective layer, a buffer layer and a first transition layer.
  • the first protective layer has a first refractive index
  • the buffer layer has a second refractive index, wherein the difference between the first refractive index and the second refractive index is greater than a preset refractive index.
  • the buffer layer is used to reduce the stress borne by the packaging film layer when the packaging film layer is bent.
  • the first transition layer is disposed between the first protective layer and the buffer layer, and the refractive index of the first transition layer is between the first refractive index and the second refractive index.
  • the display screen of the embodiment of the present application includes a display layer and an encapsulation film layer.
  • the display layer is used for displaying images; the display layer is arranged on a side of the buffer layer away from the first protective layer.
  • the packaging film layer includes: a first protective layer, a buffer layer, and a first transition layer.
  • the first protective layer has a first refractive index
  • the buffer layer has a second refractive index, wherein the difference between the first refractive index and the second refractive index is greater than a preset refractive index.
  • the buffer layer is used to reduce the stress borne by the packaging film layer when the packaging film layer is bent.
  • the first transition layer is disposed between the first protective layer and the buffer layer, and the refractive index of the first transition layer is between the first refractive index and the second refractive index.
  • the electronic device of the embodiment of the present application includes a camera and a display screen, and the display screen includes a display layer and an encapsulation film layer.
  • the display layer is used for displaying images; the display layer is arranged on a side of the buffer layer away from the first protective layer.
  • the packaging film layer includes: a first protective layer, a buffer layer, and a first transition layer.
  • the first protective layer has a first refractive index
  • the buffer layer has a second refractive index, wherein the difference between the first refractive index and the second refractive index is greater than a preset refractive index.
  • the buffer layer is used to reduce the stress borne by the packaging film layer when the packaging film layer is bent.
  • the first transition layer is disposed between the first protective layer and the buffer layer, and the refractive index of the first transition layer is between the first refractive index and the second refractive index.
  • the display layer includes a display area for displaying images, the display area is formed with opposite front and back sides, and the light emitted by the display screen is directed toward the front side along the back side and passes through the buffer layer , The first transition layer and the first protective layer are emitted to the outside, and the camera is arranged on the side of the back surface of the display layer.
  • FIGS. 1 to 7 are schematic diagrams of the structure of the packaging film layer of some embodiments of the present application.
  • FIGS. 8 to 10 are schematic diagrams of the structure of the display screen of some embodiments of the present application.
  • 11 to 13 are schematic diagrams of the reflectivity of the display screen of some embodiments of the present application to light of different wavelengths
  • FIG. 14 is a schematic structural diagram of an electronic device according to some embodiments of the present application.
  • Fig. 15 is a schematic cross-sectional view of Fig. 14 along the section line XV-XV.
  • the packaging film layer of the embodiment of the present application includes a first protective layer, a buffer layer, and a first transition layer.
  • the first protective layer has a first refractive index;
  • the buffer layer has a second refractive index, wherein the first refractive index and the second refractive index The difference of the ratio is greater than the preset refractive index, the buffer layer is used to reduce the stress that the packaging film layer bears when the packaging film layer is bent; and the first transition layer is arranged between the first protective layer and the buffer layer, and the first transition layer
  • the refractive index of the layer is between the first refractive index and the second refractive index.
  • the first protective layer is formed of silicon nitride
  • the buffer layer is formed of a polymer material
  • the first transition layer is formed of silicon oxide or silicon oxynitride.
  • the first transition layer includes a first layer and a second layer, and the buffer layer, the second layer, the first layer, and the first protective layer are stacked in sequence.
  • the refractive index of the first layer is between the first refractive index and the refractive index of the second layer
  • the refractive index of the second layer is between the refractive index of the first layer and the second refractive index
  • the first protective layer is formed of silicon nitride
  • the first layer is formed of silicon oxynitride
  • the second layer is formed of silicon oxide
  • the buffer layer is formed of a polymer material.
  • the encapsulation film layer further includes a second protective layer, and the buffer layer is disposed between the first protective layer and the second protective layer.
  • the second protective layer has a third refractive index, and the difference between the third refractive index and the second refractive index is greater than a preset refractive index.
  • the encapsulation film layer further includes a second transition layer, and the second transition layer is arranged Between the buffer layer and the second protective layer, the refractive index of the second transition layer is between the third refractive index and the second refractive index, and the second transition layer is formed of silicon oxide or silicon oxynitride.
  • the encapsulation film layer further includes a third transition layer, the third transition layer is disposed on the side of the first protective layer away from the buffer layer, and the refractive index of the third transition layer is at the level of the first refractive index and air. Between the refractive indices, the second transition layer is formed of silicon oxide or silicon oxynitride.
  • the thickness of the first transition layer is less than the first predetermined thickness.
  • the thickness of the second transition layer is less than the second predetermined thickness.
  • the thickness of the third transition layer is less than the third predetermined thickness.
  • the display screen of the embodiment of the present application includes a display layer and an encapsulation film layer.
  • the display layer is used for displaying images; the display layer is arranged on the side of the buffer layer away from the first protective layer.
  • the packaging film layer includes a first protective layer, a buffer layer and a first transition layer.
  • the first protective layer has a first refractive index
  • the buffer layer has a second refractive index, wherein the difference between the first refractive index and the second refractive index is greater than the preset refractive index.
  • the buffer layer is used to reduce the stress borne by the packaging film when the packaging film is bent.
  • the first transition layer is arranged between the first protection layer and the buffer layer, and the refractive index of the first transition layer is between the first refractive index and the second refractive index.
  • the first protective layer is formed of silicon nitride
  • the buffer layer is formed of a polymer material
  • the first transition layer is formed of silicon oxide or silicon oxynitride.
  • the first transition layer includes a first layer and a second layer, and the buffer layer, the second layer, the first layer, and the first protective layer are stacked in sequence.
  • the refractive index of the first layer is between the first refractive index and the refractive index of the second layer
  • the refractive index of the second layer is between the refractive index of the first layer and the second refractive index
  • the first protective layer is formed of silicon nitride
  • the first layer is formed of silicon oxynitride
  • the second layer is formed of silicon oxide
  • the buffer layer is formed of a polymer material.
  • the encapsulation film layer further includes a second protective layer, and the buffer layer is disposed between the first protective layer and the second protective layer.
  • the second protective layer has a third refractive index, and the difference between the third refractive index and the second refractive index is greater than a preset refractive index.
  • the encapsulation film layer further includes a second transition layer, and the second transition layer is arranged Between the buffer layer and the second protective layer, the refractive index of the second transition layer is between the third refractive index and the second refractive index, and the second transition layer is formed of silicon oxide or silicon oxynitride.
  • the encapsulation film layer further includes a third transition layer, the third transition layer is disposed on the side of the first protective layer away from the buffer layer, and the refractive index of the third transition layer is at the level of the first refractive index and air. Between the refractive indices, the second transition layer is formed of silicon oxide or silicon oxynitride.
  • the thickness of the first transition layer is less than the first predetermined thickness.
  • the thickness of the second transition layer is less than the second predetermined thickness.
  • the thickness of the third transition layer is less than the third predetermined thickness.
  • the display layer includes a substrate, an anode, a light-emitting layer, and a cathode that are stacked in sequence, wherein the cathode and the anode are used to energize the light-emitting layer to make the light-emitting layer emit light and display images; the substrate is used to control the light-emitting layer of the light-emitting layer. To display the image.
  • the display screen further includes a light extraction layer, the light extraction layer is disposed between the second protective layer and the cathode, and the light extraction layer is used to transmit light from the light emitting layer to the encapsulation film layer.
  • the substrate has a fourth refractive index
  • the display screen further includes an anti-reflection coating.
  • the anti-reflection coating is arranged on the side of the substrate away from the anode.
  • the refractive index of the anti-reflection coating is between the fourth refractive index and the refractive index of air. between.
  • the electronic device of the embodiment of the present application includes a camera and a display screen, and the display screen includes a display layer and an encapsulation film layer.
  • the display layer is used for displaying images; the display layer is arranged on the side of the buffer layer away from the first protective layer.
  • the packaging film layer includes a first protective layer, a buffer layer and a first transition layer.
  • the first protective layer has a first refractive index
  • the buffer layer has a second refractive index, wherein the difference between the first refractive index and the second refractive index is greater than the preset refractive index.
  • the buffer layer is used to reduce the stress borne by the packaging film when the packaging film is bent.
  • the first transition layer is arranged between the first protection layer and the buffer layer, and the refractive index of the first transition layer is between the first refractive index and the second refractive index.
  • the display layer includes a display area for displaying images. The display area is formed with opposite front and back sides. The light emitted by the display screen is directed toward the front along the back and passes through the buffer layer, the first transition layer and the first protective layer. For external emission, the camera is set on the side of the back of the display layer.
  • the packaging film layer 10 of the embodiment of the present application includes a first protective layer 11, a buffer layer 12 and a first transition layer 13.
  • the first protective layer 11 has a first refractive index
  • the buffer layer 12 has a second refractive index, and the difference between the first refractive index and the second refractive index is greater than or equal to the preset refractive index.
  • the buffer layer 12 is used to reduce the stress borne by the packaging film layer 10 when the packaging film layer 10 is bent.
  • the first transition layer 13 is disposed between the first protection layer 11 and the buffer layer 12, and the refractive index of the first transition layer 13 is between the first refractive index and the second refractive index.
  • the first protective layer 11, the buffer layer 12 and the first transition layer 13 are all made of transparent materials, so that light can propagate between the first protective layer 11, the buffer layer 12 and the first transition layer 13.
  • the light When light enters another medium from one medium, the light will be refracted and reflected due to the different refractive indexes of the two mediums.
  • the reflectivity of the light is determined based on the difference in refractive index between the two media. The reflectivity refers to the ratio of the reflected light in a unit of light to the entire unit of light.
  • the reflectivity of the encapsulation film layer 10 is 7.28%, that is, 7.28% of the beam of light will be on the first protective layer 11 or buffer layer. Reflect within 12.
  • the refractive index of the first transition layer 13 is between the first refractive index and the second refractive index, so as to reduce the reflectivity of light when passing through the first protective layer 11 and the buffer layer 12.
  • the preset refractive index may be a preset known value, the preset refractive index may be (0, 1.00], for example, the preset refractive index may be 0.01, 0.02, 0.05, 0.1, 0.11, 0.12, 0.20, 0.30, 0.31, 0.32, 0.33, 0.35, 0.38, 0.40, 0.50, 1.00, etc.
  • the preset refractive index of 0.20 Take the preset refractive index of 0.20 as an example for illustration, and the difference between the first refractive index and the second refractive index is 0.3
  • the refractive index difference between the first protective layer 11 and the buffer layer 12 is large, the reflectivity in the encapsulation film layer 10 is relatively large. Therefore, the first transition layer 13 can be provided in the encapsulation film layer 10. , In order to reduce the reflectivity in the packaging film layer 10.
  • the high reflectivity of the packaging film layer will cause serious reflection of light when passing through the packaging film layer, which is not conducive to the light passing through the display screen, and the imaging effect of the camera under the display screen is poor.
  • the light emitted by the display screen under the encapsulation film layer will also be seriously reflected when passing through the encapsulation film layer. As part of the light from the display screen is reflected, the screen image that the user sees is distorted, which reduces user experience.
  • a first transition layer 13 is provided between the first protective layer 11 and the buffer layer 12, and the refractive index of the first transition layer 13 is between the refractive index of the first protective layer 11 and the buffer layer 12 Between the refractive indexes, light can propagate between the first protective layer 11 and the first transition layer 13 with a small difference in refractive index, and between the first transition layer 13 and the buffer layer 12 with a small difference in refractive index.
  • the reflectivity of the light passing through the first protective layer 11, the first transition layer 13, and the buffer layer 12 in turn is smaller, due to the reduction in The reflection between the first protective layer 11 and the buffer layer 12 is beneficial for light to pass through the packaging film layer 10 better, and the camera arranged under the screen can receive more light, and the imaging quality is better.
  • the light emitted by the display screen 100 (shown in FIG. 15) has a smaller reflectivity when propagating between the buffer layer 12 and the first transition layer 13, the first transition layer 13 and the first protection layer 11, making the user The seen image of the display screen 100 is clearer, which improves the user experience.
  • the first protective layer 11 may be formed of silicon nitride.
  • the structure of silicon nitride is relatively dense, which can effectively prevent external water vapor, oxygen, etc. from entering the packaging film layer 10, thereby preventing damage to the packaging film layer 10.
  • the protected components (such as the fingerprint module or the display layer 20 shown in FIG. 8) cause damage.
  • the buffer layer 12 is formed of a polymer material, and the polymer material may include a fluorine-containing resin.
  • the fluorine-containing resin may be polytetrafluoroethylene, which has excellent dielectric properties and high flexibility.
  • the buffer layer 12 effectively increases the flexibility of the packaging film layer 10, reduces the pressure that the packaging film layer 10 bears when bending, and prevents the packaging film layer 10 from cracking.
  • the thickness of the first protective layer 11 may be 1000 nm, that is, the thickness of the silicon nitride layer may be 1000 nm.
  • the refractive index of silicon nitride to visible light with a wavelength of 550 nm is 1.85, that is, the first refractive index is 1.85.
  • the thickness of the buffer layer 12 may be 8000 nm, that is, the thickness of the polymer material layer may be 8000 nm.
  • the refractive index of the polymer material to visible light with a wavelength of 550 nm is 1.52, that is, the second refractive index is 1.52.
  • the difference between the first refractive index and the second refractive index is 0.33.
  • the first transition layer 13 may use any material whose refractive index is between the second refractive index and the first refractive index.
  • the first transition layer 13 can be any material with a refractive index between (1.52, 1.85). It should be noted that the material needs to be a transparent material.
  • the first transition layer 13 may be formed of silicon oxide, and the refractive index of silicon oxide to visible light with a wavelength of 550 nm is 1.65.
  • the refractive index difference between the silicon nitride layer and the silicon oxide layer is smaller. That is, compared with the reflectance of light between the silicon nitride layer and the polymer material layer, the reflectance of light between the silicon nitride layer and the silicon oxide layer is smaller. In other words, light is less likely to be reflected between the silicon nitride layer and the silicon oxide layer.
  • the packaging film layer 10 reduces the reflectivity of light in the packaging film layer 10 by adding a layer of silicon oxide between the silicon nitride layer and the polymer material layer.
  • the first transition layer 13 can also be formed of silicon oxynitride, and the refractive index of silicon oxynitride to visible light with a wavelength of 550 nm is 1.75.
  • the packaging film layer 10 reduces the reflectivity of light in the packaging film layer 10 by adding a layer of silicon oxynitride between the silicon nitride layer and the polymer material layer.
  • the first transition layer 13 can also be made of aluminum oxide or tungsten trioxide, wherein the refractive index of aluminum oxide to visible light with a wavelength of 550nm is 1.63, and the refractive index of tungsten trioxide to visible light with a wavelength of 550nm is 1.70.
  • the packaging film layer 10 includes a polymer material layer, an aluminum oxide layer, and a silicon nitride layer stacked in sequence
  • nitrogen The difference in refractive index between the silicon dioxide layer and the aluminum oxide layer is smaller, and the difference in refractive index between the polymer material layer and the aluminum oxide layer is also smaller.
  • the packaging film layer 10 reduces the reflectivity of light in the packaging film layer 10 by adding a layer of aluminum oxide between the silicon nitride layer and the polymer material layer.
  • the packaging film layer 10 includes a polymer material layer, a tungsten trioxide layer, and a silicon nitride layer stacked in sequence
  • the refractive index difference with the tungsten trioxide layer is smaller, and the refractive index difference between the polymer material layer and the tungsten trioxide layer is also smaller.
  • the packaging film layer 10 reduces the reflectivity of light in the packaging film layer 10 by adding a layer of tungsten trioxide between the silicon nitride layer and the polymer material layer.
  • the preparation of silicon oxide and silicon oxynitride is similar to the preparation of silicon nitride, the corresponding silicon oxide, silicon oxynitride and silicon nitride can be prepared by controlling the introduction of different gases. These gases can include monosilane, oxygen, ammonia, and so on. Compared with the first transition layer 13 made of other materials, the first transition layer 13 made of silicon oxide or silicon oxynitride has a simpler preparation process. The corresponding requirements can be obtained simply by controlling different gases. No need to add a new process to the preparation.
  • the first transition layer 13 may include a first layer 131 and a second layer 132
  • the packaging film layer 10 may include a buffer layer 12, a second layer 132, and a second layer 132 stacked in sequence.
  • the refractive index of the first layer 131 of the first transition layer 13 is between the first refractive index of the first protective layer 11 and the refractive index of the second layer 132; the refractive index of the second layer 132 of the first transition layer 13 It is between the refractive index of the first layer 131 and the second refractive index of the buffer layer 12.
  • the first protective layer 11 is formed of silicon nitride, that is, the first refractive index is 1.85
  • the first layer 131 of the first transition layer 13 is formed of silicon oxynitride, that is, the refractive index of the first layer 131 of the first transition layer 13 is
  • the second layer 132 of the first transition layer 13 is formed of silicon oxide. That is, the refractive index of the second layer 132 of the first transition layer 13 is 1.65.
  • the buffer layer 12 can be formed of a polymer material. It may be a fluorine-containing resin, that is, the second refractive index is 1.52.
  • the packaging film layer 10 the refraction between the first protective layer 11, the first layer 131 of the first transition layer 13, the second layer 132 of the first transition layer 13, and the two adjacent layers of the buffer layer 12
  • the difference in refractive index is smaller than the difference in refractive index between the silicon nitride layer and the polymer material layer, which further reduces the overall reflectivity of the packaging film layer 10; moreover, the first protective layer 11 and the first transition layer
  • the refractive index of the first layer 131 of the layer 13, the second layer 132 of the first transition layer 13 and the buffer layer 12 are successively reduced, and the difference in refractive index between the two adjacent layers is all a small value , Further reducing the overall reflectivity of the packaging film layer 10.
  • the refractive index of the first layer 131 of the first transition layer 13 and the refractive index of the second layer 132 of the first transition layer 13 are switchable.
  • the first protective layer 11 is formed of silicon nitride, that is, the first refractive index is 1.85.
  • the first layer 131 of the first transition layer 13 is formed of silicon oxide, that is, the refractive index of the first layer 131 of the first transition layer 13 is 1.65.
  • the second layer 132 of the first transition layer 13 is formed of silicon oxynitride, that is, the refractive index of the second layer 132 of the first transition layer 13 is 1.75.
  • the buffer layer 12 may be formed of a polymer material, and the polymer material may be a fluorine-containing resin, that is, the second refractive index is 1.52.
  • the packaging film layer 10 only includes the first protective layer 11 and the buffer layer 12
  • two first transition layers 13 are added between the first protective layer 11 and the buffer layer 12, so that the packaging film layer 10
  • the refractive index difference between two adjacent film layers is smaller, that is, the reflectivity of the packaging film layer 10 is smaller.
  • the thickness of the first transition layer 13 is less than or equal to the first preset thickness.
  • the first preset thickness can be any value in [80nm, 220nm], for example, the first preset thickness can be 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 160nm, 170nm, 180nm, 190nm, 200nm, 210nm, 220nm and so on. In the embodiment of the present application, the first predetermined thickness is 200 nm.
  • the thickness of the first transition layer 13 may be 95 nm; when the first transition layer 13 is formed of a layer of silicon oxynitride, the thickness of the first transition layer 13 may be 80 nm When the first transition layer 13 is formed using a layer of silicon oxide and a layer of silicon oxynitride, the thickness of the first transition layer 13 may be 175 nm. Of course, the first transition layer 13 can also have other thicknesses, which will not be listed here.
  • the thickness of the first protective layer 11 may be 1000 nm, and the thickness of the buffer layer 12 may be 8000 nm, therefore, when the thickness of the first transition layer 13 is less than or equal to the first preset thickness, the thickness of the first transition layer 13 is The thickness of the packaging film layer 10 has less influence, and the packaging film layer 10 is lighter and thinner.
  • the packaging film layer 10 of the embodiment of the present application may further include a second protective layer 14, and the buffer layer 12 is disposed between the first protective layer 11 and the second protective layer 14.
  • the first protection layer 11 and the second protection layer 14 can effectively protect the components protected by the packaging film layer 10 (for example, a fingerprint module or the display layer 20 shown in FIG. 8 ).
  • the material of the second protection layer 14 may be the same as the material of the first protection layer 11, for example, the second protection layer 14 is formed of silicon nitride. Of course, the material of the second protective layer 14 may be different from that of the first protective layer 11.
  • the first protective layer 11 and the second protective layer 14 are both formed of silicon nitride, and the compactness of the structure of the silicon nitride material can meet the requirements of normal use, because the manufacturing process of silicon nitride is relatively simple Therefore, the manufacturing cost of the packaging film layer 10 can be reduced.
  • the second protective layer 14 formed of silicon nitride can prevent moisture, oxygen, etc. from passing through the second protective layer 14 from damaging the components protected by the packaging film layer 10 (for example, the fingerprint module or the display layer 20 shown in FIG. 8 ).
  • the second protective layer 14 has a third refractive index. Since the second protective layer 14 and the first protective layer 11 are both silicon nitride, the third refractive index may be the same as the third refractive index. A refractive index is the same, both can be 1.85. When the difference between the third refractive index and the second refractive index is greater than or equal to the preset refractive index, it indicates that the refractive index difference between the buffer layer 12 and the second protective layer 14 is relatively large.
  • a second transition layer 15 is provided in the middle, and the refractive index of the second transition layer 15 is between the third refractive index and the second refractive index, so as to reduce the reflectivity of the packaging film layer 10.
  • the difference between the third refractive index and the second refractive index is less than the preset refractive index, it means that the refractive index difference between the buffer layer 12 and the second protective layer 14 is relatively small, and the reflectivity in the packaging film layer 10 is relatively high. Therefore, there is no need to provide the second transition layer 15 in the packaging film layer 10.
  • the second transition layer 15 may be formed of silicon oxide.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, and a silicon nitride layer stacked in sequence.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer stacked in sequence.
  • the encapsulation film layer 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon oxide layer stacked in sequence.
  • the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer stacked in sequence.
  • the second transition layer 15 may be formed of silicon oxynitride.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, and a silicon nitride layer stacked in sequence.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer stacked in sequence.
  • the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, and an oxynitride layer that are stacked in sequence.
  • a silicon layer and a silicon nitride layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon oxide layer, and a silicon nitride layer stacked in sequence.
  • the second transition layer 15 may include a first layer 151 and a second layer 152, the first layer 151 of the second transition layer 15 may be formed of silicon oxide, and the second transition layer 15
  • the second layer 152 can be formed of silicon oxynitride.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, and a silicon nitride layer stacked in sequence.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer stacked in sequence.
  • the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, and an oxynitride layer that are sequentially stacked.
  • a silicon layer, a silicon oxide layer, and a silicon nitride layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, and a silicon oxynitride layer stacked in sequence. Layer and silicon nitride layer.
  • the materials of the first layer 151 of the second transition layer 15 and the second layer 152 of the second transition layer 15 can be exchanged.
  • the first layer 151 of the second transition layer 15 may be formed of silicon oxynitride
  • the second layer 152 of the second transition layer 15 may be formed of silicon oxide.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, and a nitride layer that are sequentially stacked. Silicon layer.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer that are sequentially stacked.
  • the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, and an oxynitride layer that are sequentially stacked.
  • a silicon layer, a silicon oxide layer, and a silicon nitride layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, and a silicon oxynitride layer stacked in sequence. Layer and silicon nitride layer.
  • the thickness of the second transition layer 15 is less than or equal to the second predetermined thickness.
  • the second preset thickness can be the same as the first preset thickness, and will not be repeated here.
  • the second preset thickness may also be different from the first preset thickness.
  • the second preset thickness is greater than the first preset thickness, or the second preset thickness is less than the first preset thickness.
  • the packaging film layer 10 of the embodiment of the present application may further include a third transition layer 16.
  • the third transition layer 16 is disposed on the side of the first protection layer 11 away from the buffer layer 12.
  • the refractive index of the third transition layer 16 may be between the first refractive index of the first protective layer 11 and the refractive index of air.
  • the third transition layer 16 may be one layer or two layers.
  • the third transition layer 16 can be arbitrarily combined with the first transition layer 13 of different materials and layers and/or the second transition layer 15 of different materials and layers.
  • the third transition layer 16 may be formed of silicon oxide
  • the second transition layer 15 may be formed of silicon oxide.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxide layer stacked in sequence.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxide layer stacked in sequence. .
  • the encapsulation film layer 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon oxide layer stacked in sequence.
  • Layer, silicon nitride layer, and silicon oxide layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer stacked in sequence And silicon oxide layer.
  • the third transition layer 16 may be formed of silicon oxide, and the second transition layer 15 may be formed of silicon oxynitride.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxide layer stacked in sequence.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxide layer that are sequentially stacked.
  • the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, and an oxynitride layer that are stacked in sequence.
  • a silicon layer, a silicon nitride layer, and a silicon oxide layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, silicon oxynitride, a silicon oxide layer, and a silicon nitride layer that are sequentially stacked. And silicon oxide layer.
  • the third transition layer 16 can be formed of silicon oxide
  • the second transition layer 15 can include a first layer 151 and a second layer 152
  • the first layer 151 of the second transition layer 15 can be formed of silicon oxide.
  • the second layer 152 of the second transition layer 15 may be formed of silicon oxynitride.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and Silicon oxide layer.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer that are sequentially stacked. Layer and silicon oxide layer.
  • the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, and an oxynitride layer that are sequentially stacked.
  • a silicon layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxide layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, and a silicon oxide layer stacked in sequence , Silicon oxynitride layer, silicon nitride layer and silicon oxide layer.
  • the materials of the first layer 151 of the second transition layer 15 and the second layer 152 of the second transition layer 15 can be exchanged.
  • the first layer 151 of the second transition layer 15 may be formed of silicon oxynitride
  • the second layer 152 of the second transition layer 15 may be formed of silicon oxide.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer and Silicon oxide layer.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer that are sequentially stacked. Layer and silicon oxide layer.
  • the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, and an oxynitride layer that are sequentially stacked.
  • the third transition layer 16 may be formed of silicon oxynitride
  • the second transition layer 15 may be formed of silicon oxide.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer that are sequentially stacked.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxynitride layer that are sequentially stacked.
  • the encapsulation film layer 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon oxide layer stacked in sequence.
  • Layer, silicon nitride layer, and silicon oxynitride layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer stacked in sequence. Layer and silicon oxynitride layer.
  • the third transition layer 16 may be formed of silicon oxynitride
  • the second transition layer 15 may be formed of silicon oxynitride.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer that are sequentially stacked. .
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and an oxynitride layer that are sequentially stacked. Silicon layer.
  • the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, and an oxynitride layer that are stacked in sequence.
  • a silicon layer, a silicon nitride layer, and a silicon oxynitride layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, silicon oxynitride, a silicon oxide layer, and a nitride Silicon and silicon oxynitride layer.
  • the third transition layer 16 can be formed of silicon oxynitride
  • the second transition layer 15 can include a first layer 151 and a second layer 152
  • the first layer 151 of the second transition layer 15 can be silicon oxide.
  • the second layer 152 of the second transition layer 15 can be formed using silicon oxynitride.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and Silicon oxynitride layer.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer that are sequentially stacked. Layer and silicon oxynitride layer.
  • the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, and an oxynitride layer that are sequentially stacked.
  • a silicon layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, and a silicon oxide layer stacked in sequence. Layer, silicon oxynitride layer, silicon nitride layer and silicon oxynitride layer.
  • the materials of the first layer 151 of the second transition layer 15 and the second layer 152 of the second transition layer 15 can be exchanged.
  • the first layer 151 of the second transition layer 15 may be formed of silicon oxynitride
  • the second layer 152 of the second transition layer 15 may be formed of silicon oxide.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer and Silicon oxynitride layer.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer that are sequentially stacked. Layer and silicon oxynitride layer.
  • the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, and an oxynitride layer that are sequentially stacked.
  • the third transition layer 16 may include a first layer 161 and a second layer 162, the first layer 161 of the third transition layer 16 may be formed of silicon oxide, and the third transition layer 16
  • the second layer 162 may be formed of silicon oxynitride, and the second transition layer 15 may be formed of silicon oxide.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, and Silicon oxide layer.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxynitride layer that are sequentially stacked. Layer and silicon oxide layer.
  • the encapsulation film layer 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon oxide layer stacked in sequence.
  • the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, and a silicon oxynitride layer stacked in sequence , Silicon nitride layer, silicon oxynitride layer and silicon oxide layer.
  • the first layer 161 of the third transition layer 16 may be formed of silicon oxide
  • the second layer 162 of the third transition layer 16 may be formed of silicon oxynitride
  • the second transition layer 15 may be formed of silicon oxynitride.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer that are sequentially stacked. And silicon oxide layer.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and an oxynitride layer that are sequentially stacked. Silicon layer and silicon oxide layer.
  • the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, and an oxide layer that are sequentially stacked.
  • a silicon layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, and an oxynitride layer stacked in sequence. Silicon layer, silicon nitride layer, silicon oxynitride layer and silicon oxide layer.
  • the first layer 161 of the third transition layer 16 can be formed of silicon oxide
  • the second layer 162 of the third transition layer 16 can be formed of silicon oxynitride
  • the second transition layer 15 can include the first layer. 151 and the second layer 152
  • the first layer 151 of the second transition layer 15 may be formed of silicon oxide
  • the second layer 152 of the second transition layer 15 may be formed of silicon oxynitride.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, Silicon oxynitride layer and silicon oxide layer.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer that are sequentially stacked. Layer, silicon oxynitride layer and silicon oxide layer.
  • the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, and an oxynitride layer that are sequentially stacked.
  • a silicon layer, a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, and a polymer material stacked in sequence Layer, silicon oxide layer, silicon oxynitride layer, silicon nitride layer, silicon oxynitride layer, and silicon oxide layer.
  • the materials of the first layer 151 of the second transition layer 15 and the second layer 152 of the second transition layer 15 can be exchanged.
  • the first layer 152 of the second transition layer 15 may be formed of silicon oxynitride
  • the second layer 152 of the second transition layer 15 may be formed of silicon oxide
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, Silicon oxynitride layer and silicon oxide layer.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer that are sequentially stacked. Layer, silicon oxynitride layer and silicon oxide layer.
  • the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, and an oxynitride layer that are sequentially stacked.
  • a silicon layer, a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, and a polymer material stacked in sequence Layer, silicon oxide layer, silicon oxynitride layer, silicon nitride layer, silicon oxynitride layer, and silicon oxide layer.
  • the materials of the first layer 161 and the second layer 162 of the third transition layer 16 can be exchanged.
  • the first layer 161 of the third transition layer 16 can be formed of silicon oxynitride
  • the third The second layer 162 of the transition layer 16 may be formed of silicon oxide
  • the second transition layer 15 may be formed of silicon oxide.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, a silicon oxide layer, and a layer of nitrogen that are sequentially stacked. Silicon oxide layer.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxide layer that are sequentially stacked. And silicon oxynitride layer.
  • the encapsulation film layer 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon oxide layer stacked in sequence.
  • the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, and a silicon oxynitride layer stacked in sequence , Silicon nitride layer, silicon oxide layer and silicon oxynitride layer.
  • the first layer 161 of the third transition layer 16 may be formed of silicon oxynitride
  • the second layer 162 of the third transition layer 16 may be formed of silicon oxide
  • the second transition layer 15 may be formed of silicon oxynitride.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, a silicon oxide layer, and Silicon oxynitride layer.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxide layer that are sequentially stacked. Layer and silicon oxynitride layer.
  • the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, and an oxide layer that are sequentially stacked.
  • a silicon layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, and an oxynitride layer stacked in sequence. Silicon layer, silicon nitride layer, silicon oxide layer and silicon oxynitride layer.
  • the first layer 161 of the third transition layer 16 may be formed of silicon oxynitride
  • the second layer 162 of the third transition layer 16 may be formed of silicon oxide
  • the second transition layer 15 may include the first layer. 151 and the second layer 152
  • the first layer 151 of the second transition layer 15 may be formed of silicon oxide
  • the second layer 152 of the second transition layer 15 may be formed of silicon oxynitride.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, Silicon oxide layer and silicon oxynitride layer.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer that are sequentially stacked. Layer, silicon oxide layer and silicon oxynitride layer.
  • the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, and an oxynitride layer that are sequentially stacked.
  • a silicon layer, a silicon oxide layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, and a polymer material stacked in sequence Layer, silicon oxide layer, silicon oxynitride layer, silicon nitride layer, silicon oxide layer, and silicon oxynitride layer.
  • the materials of the first layer 151 of the second transition layer 15 and the second layer 152 of the second transition layer 15 can be exchanged.
  • the first layer 151 of the second transition layer 15 may be formed of silicon oxynitride
  • the second layer 152 of the second transition layer 15 may be formed of silicon oxide
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, Silicon oxide layer and silicon oxynitride layer.
  • the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer that are sequentially stacked. Layer, silicon oxide layer and silicon oxynitride layer.
  • the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, and an oxynitride layer that are sequentially stacked.
  • a silicon layer, a silicon oxide layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, and a polymer material stacked in sequence Layer, silicon oxide layer, silicon oxynitride layer, silicon nitride layer, silicon oxide layer, and silicon oxynitride layer.
  • the packaging film layer 10 may also default to the second transition layer 15, that is, the packaging film layer 10 includes the third transition layer 16 and the first transition layer 13, and the second transition layer 15 is not provided.
  • the thickness of the third transition layer 16 is less than or equal to the third predetermined thickness.
  • the third predetermined thickness may be the same as the above-mentioned first predetermined thickness and/or the second predetermined thickness, which will not be repeated here.
  • the third preset thickness may also be different from the first preset thickness or the second preset thickness, and will not be listed here.
  • the thickness of the first transition layer 13, the second transition layer 15 and the third transition layer 16 can be respectively less than or equal to the preset thickness, the thickness of the first transition layer 13, the second transition layer 15 and the third transition layer 16 is avoided This affects the thickness of the packaging film layer 10.
  • the display screen 100 of the embodiment of the present application includes a display layer 20 and the packaging film layer 10 of any of the above embodiments.
  • the display layer 20 is provided on the side of the buffer layer 12 away from the first protective layer 11.
  • the packaging film layer 10 includes a second protective layer 14, a second transition layer 15, a buffer layer 12, a first transition layer 13, a first protective layer 11, and a third transition layer 16 stacked in sequence.
  • the display layer 20 is disposed on the side of the second protection layer 14 away from the second transition layer 15.
  • the display layer 20 is arranged under the encapsulation film layer 10, and the display layer 20 is encapsulated by the encapsulation film layer 10, which ensures that the display layer 20 is not interfered by external water vapor and oxygen.
  • the first protective layer 11 and the second protective layer 14 can be formed of silicon nitride.
  • the dense molecular structure of silicon nitride can protect the display layer 20 more densely to prevent external moisture and oxygen from causing damage to the display screen 100. damage.
  • the display layer 20 may include a substrate 24, an anode 23, a light-emitting layer 22, and a cathode 21 that are sequentially stacked.
  • the cathode 21 and the anode 23 are used to energize the light-emitting layer 22 to make the light-emitting layer 22 emit light and display an image.
  • a display screen 100 there may be a plurality of cathodes 21, light-emitting layers 22, and anodes 23 arranged in a matrix.
  • the light-emitting layer 22 may be formed of an organic material, for example, the organic material is Organic Electro-Luminescence.
  • the substrate 24 is used to control the light emission of the light emitting layer 22 to display an image. Among them, the substrate 24 is used to support the display layer 20 and the packaging film layer 10.
  • the controller (for example, CPU) can transmit current and signals through the substrate 24 to control the light-emitting layer to emit light.
  • the substrate 24 may include a TFT substrate.
  • the display screen 100 further includes a light extraction layer 25, wherein the material of the light extraction layer 25 may be the same as the material of the light emitting layer 22, for example, the material of the light extraction layer 25 is organic EL .
  • the light extraction layer 25 can also be made of other materials.
  • the material of the light extraction layer 25 is an electron-blocking layer (EBL) or the like.
  • the light extraction layer 25 is provided between the second protective layer 14 and the cathode 21.
  • the second protective layer 14 can protect the light extraction layer 25 to prevent water vapor and oxygen from entering the light extraction layer 25 and damage the light extraction layer 25.
  • the light emitted by the light emitting layer 22 can be conducted by the light extraction layer 25 to the encapsulation film layer 10 to prevent the light in the light emitting layer 22 from being reflected multiple times in the display screen 100, thereby increasing the light emitted from the light emitting layer 22 on the display screen 100. Light transmission efficiency within.
  • the substrate 24 has a fourth refractive index
  • the display screen 100 may further include an anti-reflection film 26, and the anti-reflection film 26 is disposed on the side of the substrate 24 away from the anode 23.
  • the refractive index of the antireflection film 26 is between the fourth refractive index and the air refractive index.
  • the fourth refractive index of the substrate 24 is 1.5
  • the refractive index of air is approximately 1. Therefore, the light passing through the packaging film layer 10 will be reflected when passing through the substrate 24. Therefore, when the refractive index of the antireflection film 26 is at (1, 1.5), the light enters the air through the substrate 24, and the reflectivity decreases.
  • the display screen 100 may further include a polymer film material, and the polymer film material may be provided on the side of the packaging film layer 10 away from the display layer 20. Specifically, the polymer membrane material may be provided on the side of the third transition layer 16 away from the first protective layer 11.
  • the polymer film material may be a polarizer or a touch screen film, etc., to realize functions such as a touch screen of the display screen 100.
  • the display screen 100 includes a third transition layer 16, a first protection layer 11, a first transition layer 13, a buffer layer 12, a second transition layer 15, a second protection layer 14, The light extraction layer 25, the cathode 21, the light emitting layer 22, the anode 23, and the substrate 24.
  • the corresponding third transition layer 16, the first protective layer 11, the first transition layer 13, the buffer layer 12, the second transition layer 15 and the second protective layer 14 are corresponding to the materials, thickness and refractive index of the corresponding relationship as shown in Table 1. .
  • the display screen 100 includes a substrate 24, an anode 23, a light-emitting layer 22, a cathode 21, a light extraction layer 25, a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, and a silicon nitride layer that are sequentially stacked. And silicon oxide layer.
  • FIG. 11 For the reflectance detection of the display screen 100, please refer to FIG. 11. FIG. 11
  • the average reflectance of the display screen 100 can be obtained as 6.07%.
  • the average reflectivity refers to that 6.07% of all light (wavelengths between 380 nm and 780 nm) illuminating the display screen 100 will be reflected in the display screen 100.
  • the display screen 100 includes a third transition layer 16, a first protection layer 11, a first transition layer 13, a buffer layer 12, a second transition layer 15, and a second protection layer 14.
  • the light extraction layer 25 the cathode 21, the light emitting layer 22, the anode 23 and the substrate 24.
  • Table 2 for the corresponding materials, thickness and refractive index of the third transition layer 16, the first protection layer 11, the first transition layer 13, the buffer layer 12, the second transition layer 15 and the second protection layer 14.
  • the display screen 100 includes a substrate 24, an anode 23, a light-emitting layer 22, a cathode 21, a light extraction layer 25, a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, and a layer of Silicon layer and silicon oxynitride layer.
  • FIG. 12 is an oscillation graph of the display screen 100 in the simulation software. From the oscillation graph, the average reflectance of the display screen 100 can be obtained as 6.17%.
  • the display screen 100 includes a third transition layer 16, a first protection layer 11, a first transition layer 13, a buffer layer 12, a second transition layer 15, and a second protection layer 14.
  • the light extraction layer 25 the cathode 21, the light emitting layer 22, the anode 23 and the substrate 24.
  • Table 3 for the corresponding materials, thickness and refractive index of the third transition layer 16, the first protection layer 11, the first transition layer 13, the buffer layer 12, the second transition layer 15 and the second protection layer 14.
  • the third transition layer 16, the first transition layer 13, and the second transition layer 15 are all formed of silicon oxide and silicon oxynitride, and the first protective layer 11 and the second protective layer 14 are all formed of silicon nitride.
  • the buffer layer 12 is formed of a polymer material. Among them, since the refractive index of silicon oxynitride is greater than that of silicon oxide, the silicon oxynitride is arranged in a layer close to silicon nitride, so that the difference in refractive index of two adjacent layers is smaller. The average reflectivity of the display screen 100 is reduced.
  • the display screen 100 includes a substrate 24, an anode 23, a light emitting layer 22, a cathode 21, a light extraction layer 25, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, Silicon oxynitride layer, silicon nitride layer, silicon oxynitride layer and silicon oxide.
  • FIG. 13 is an oscillation graph of the display screen 100 in the simulation software. From the oscillation graph, the average reflectance of the display screen 100 can be obtained as 5.56%.
  • the encapsulating film layer 10 can also be used to encapsulate the fingerprint module, so as to prevent external water vapor, gas, etc. from entering the fingerprint module and causing damage to the fingerprint module.
  • the electronic device 1000 of the embodiment of the present application includes a camera 200 and any one of the above-mentioned display screens 100.
  • the display screen 100 includes a display area 110 for displaying images, and the display area 110 is formed with a phase
  • the front side 111 and the back side 112 of the back the light emitted by the display screen 100 is directed to the front side 111 along the back side 112, and is emitted to the outside after passing through the buffer layer 12, the first transition layer 13 and the first protective layer 11.
  • the camera 200 is set on the display
  • the back 112 of the layer 20 is located on the side.
  • the camera 200 may be a front-mounted under-screen camera, and external light passes through the display screen 100 and is received by the camera 200. If the reflectivity of the display screen 100 is too large, more reflections will occur in the display screen 100, and the light reflected by the display screen 100 may eventually be received by the camera 200, which affects the imaging clarity of the camera 200. Therefore, the first transition layer 13, the second transition layer 15 and the third transition layer 16 are added in the display screen 100 to reduce the average reflectivity of the display screen 100 and improve the imaging clarity of the camera 200. Of course, when the light from the display layer in the display screen 100 passes through the packaging film, the reflectivity is also smaller, which improves the display effect of the display screen 100 in the electronic device 100.
  • a first transition layer 13 is provided between the first protective layer 11 and the buffer layer 12.
  • the refractive index of the first transition layer 13 is at the refractive index and the buffer of the first protective layer 11.
  • the refractive index of the layer 12 is between the first protective layer 11 and the first transition layer 13, and the first transition layer 13 and the buffer layer 12, which have a small difference in refractive index.
  • the reflectivity of the light passing through the first protective layer 11, the first transition layer 13, and the buffer layer 12 in turn is smaller, which reduces the amount of light on the first protective layer.
  • the reflection between the buffer layer 11 and the buffer layer 12 is beneficial for light to pass through the packaging film layer 10 better, and the camera arranged under the screen can receive more light, and the imaging quality is better.
  • the light emitted by the display screen 100 (shown in FIG. 15) has a smaller reflectivity when propagating between the buffer layer 12 and the first transition layer 13, the first transition layer 13 and the first protection layer 11, making the user
  • the image of the display screen 100 seen is clearer, which improves the user experience.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include at least one of the features. In the description of the present application, "a plurality of” means at least two, such as two, three, etc., unless specifically defined otherwise.

Abstract

Provided are a packaging film layer (10), a display screen (100), and an electronic device (1000). The packaging film layer (10) comprises a first protective layer (11), a buffer layer (12), and a first transition layer (13). The buffer layer (12) is used for reducing the stress that the packaging film layer (10) bears when the packaging film layer (10) is bent; the first transition layer (13) is arranged between the first protective layer (11) and the buffer layer (12); the refractive index of the first transition layer (13) is between the first refractive index and the second refractive index.

Description

封装膜层、显示屏及电子设备Packaging film, display screen and electronic equipment
优先权信息Priority information
本申请请求2020年01月16日向中国国家知识产权局提交的、专利申请号为202010046705.2的专利申请的优先权和权益,并且通过参照将其全文并入此处。This application requests the priority and rights of the patent application with the patent application number 202010046705.2 filed with the State Intellectual Property Office of China on January 16, 2020, and the full text is incorporated herein by reference.
技术领域Technical field
本申请涉及封装技术,特别涉及一种封装膜层、显示屏及电子设备。This application relates to packaging technology, in particular to a packaging film layer, a display screen and an electronic device.
背景技术Background technique
为了实现对元件(例如显示屏)的保护,可以利用封装膜层对显示屏进行封装。In order to protect the components (such as the display screen), the display screen can be packaged with a packaging film layer.
发明内容Summary of the invention
本申请的实施例提供了一种封装膜层、显示屏及电子设备。The embodiments of the present application provide a packaging film layer, a display screen, and an electronic device.
本申请实施方式的封装膜层包括第一保护层、缓冲层及第一过渡层。所述第一保护层具有第一折射率,所述缓冲层具有第二折射率,其中,所述第一折射率与所述第二折射率的差值大于预设折射率。所述缓冲层用于在所述封装膜层弯折时减小所述封装膜层承受的应力。所述第一过渡层设置在所述第一保护层与所述缓冲层之间,所述第一过渡层的折射率处于所述第一折射率与所述第二折射率之间。The packaging film layer of the embodiment of the present application includes a first protective layer, a buffer layer and a first transition layer. The first protective layer has a first refractive index, and the buffer layer has a second refractive index, wherein the difference between the first refractive index and the second refractive index is greater than a preset refractive index. The buffer layer is used to reduce the stress borne by the packaging film layer when the packaging film layer is bent. The first transition layer is disposed between the first protective layer and the buffer layer, and the refractive index of the first transition layer is between the first refractive index and the second refractive index.
本申请实施方式的显示屏包括显示层及封装膜层。所述显示层用于显示图像;所述显示层设于所述缓冲层的远离所述第一保护层的一侧。所述封装膜层包括:第一保护层、缓冲层及第一过渡层。所述第一保护层具有第一折射率,所述缓冲层具有第二折射率,其中,所述第一折射率与所述第二折射率的差值大于预设折射率。所述缓冲层用于在所述封装膜层弯折时减小所述封装膜层承受的应力。所述第一过渡层设置在所述第一保护层与所述缓冲层之间,所述第一过渡层的折射率处于所述第一折射率与所述第二折射率之间。The display screen of the embodiment of the present application includes a display layer and an encapsulation film layer. The display layer is used for displaying images; the display layer is arranged on a side of the buffer layer away from the first protective layer. The packaging film layer includes: a first protective layer, a buffer layer, and a first transition layer. The first protective layer has a first refractive index, and the buffer layer has a second refractive index, wherein the difference between the first refractive index and the second refractive index is greater than a preset refractive index. The buffer layer is used to reduce the stress borne by the packaging film layer when the packaging film layer is bent. The first transition layer is disposed between the first protective layer and the buffer layer, and the refractive index of the first transition layer is between the first refractive index and the second refractive index.
本申请实施方式的电子设备包括摄像头及显示屏,所述显示屏包括显示层及封装膜层。所述显示层用于显示图像;所述显示层设于所述缓冲层的远离所述第一保护层的一侧。所述封装膜层包括:第一保护层、缓冲层及第一过渡层。所述第一保护层具有第一折射率,所述缓冲层具有第二折射率,其中,所述第一折射率与所述第二折射率的差值大于预设折射率。所述缓冲层用于在所述封装膜层弯折时减小所述封装膜层承受的应力。所述第一过渡层设置在所述第一保护层与所述缓冲层之间,所述第一过渡层的折射率处于所述第一折射率与所述第二折射率之间。所述显示层包括用于显示图像的显示区,所述显示区形成有相背的正面及背面,所述显示屏发出的光线沿所述背面指向所述正面的方向、并经过所述缓冲层、所述第一过渡层和所述第一保护层后向外界发射,所述摄像头设置在所述显示层的所述背面所在一侧。The electronic device of the embodiment of the present application includes a camera and a display screen, and the display screen includes a display layer and an encapsulation film layer. The display layer is used for displaying images; the display layer is arranged on a side of the buffer layer away from the first protective layer. The packaging film layer includes: a first protective layer, a buffer layer, and a first transition layer. The first protective layer has a first refractive index, and the buffer layer has a second refractive index, wherein the difference between the first refractive index and the second refractive index is greater than a preset refractive index. The buffer layer is used to reduce the stress borne by the packaging film layer when the packaging film layer is bent. The first transition layer is disposed between the first protective layer and the buffer layer, and the refractive index of the first transition layer is between the first refractive index and the second refractive index. The display layer includes a display area for displaying images, the display area is formed with opposite front and back sides, and the light emitted by the display screen is directed toward the front side along the back side and passes through the buffer layer , The first transition layer and the first protective layer are emitted to the outside, and the camera is arranged on the side of the back surface of the display layer.
本申请的附加方面和优点将在下面的描述中部分给出,部分将从下面的描述中变得明显,或通过本申请的实践了解到。The additional aspects and advantages of the present application will be partly given in the following description, and part of them will become obvious from the following description, or be understood through the practice of the present application.
附图说明Description of the drawings
本申请的上述和/或附加的方面和优点从结合下面附图对实施方式的描述中将变得明显和容易理解,其中:The above and/or additional aspects and advantages of the present application will become obvious and easy to understand from the description of the embodiments in conjunction with the following drawings, in which:
图1至图7是本申请某些实施方式的封装膜层的结构示意图;1 to 7 are schematic diagrams of the structure of the packaging film layer of some embodiments of the present application;
图8至图10是本申请某些实施方式的显示屏的结构示意图;8 to 10 are schematic diagrams of the structure of the display screen of some embodiments of the present application;
图11至图13是本申请某些实施方式的显示屏对不同波长的光线的反射率的示意图;11 to 13 are schematic diagrams of the reflectivity of the display screen of some embodiments of the present application to light of different wavelengths;
图14是本申请某些实施方式的电子设备的结构示意图;FIG. 14 is a schematic structural diagram of an electronic device according to some embodiments of the present application;
图15是图14沿剖面线XV-XV的剖面示意图。Fig. 15 is a schematic cross-sectional view of Fig. 14 along the section line XV-XV.
具体实施方式Detailed ways
下面详细描述本申请的实施例,所述实施例的示例在附图中示出,其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的,旨在用于解释本申请,而不能理解为对本申请的限制。The embodiments of the present application are described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals indicate the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the drawings are exemplary, and are intended to explain the present application, but should not be understood as a limitation to the present application.
本申请实施方式的封装膜层包括第一保护层、缓冲层及第一过渡层,第一保护层具有第一折射率;缓冲层具有第二折射率,其中,第一折射率与第二折射率的差值大于预设折射率,缓冲层用于在封装膜层弯折时减小封装膜层承受的应力;及第一过渡层设置在第一保护层与缓冲层之间,第一过渡层的折射率处于第一折射率与第二折射率之间。The packaging film layer of the embodiment of the present application includes a first protective layer, a buffer layer, and a first transition layer. The first protective layer has a first refractive index; the buffer layer has a second refractive index, wherein the first refractive index and the second refractive index The difference of the ratio is greater than the preset refractive index, the buffer layer is used to reduce the stress that the packaging film layer bears when the packaging film layer is bent; and the first transition layer is arranged between the first protective layer and the buffer layer, and the first transition layer The refractive index of the layer is between the first refractive index and the second refractive index.
在某些实施方式中,第一保护层采用氮化硅形成,缓冲层采用高分子材料形成。In some embodiments, the first protective layer is formed of silicon nitride, and the buffer layer is formed of a polymer material.
在某些实施方式中,第一过渡层采用氧化硅或氮氧化硅形成。In some embodiments, the first transition layer is formed of silicon oxide or silicon oxynitride.
在某些实施方式中,第一过渡层包括第一层和第二层,缓冲层、第二层、第一层及第一保护层依次层叠设置。In some embodiments, the first transition layer includes a first layer and a second layer, and the buffer layer, the second layer, the first layer, and the first protective layer are stacked in sequence.
在某些实施方式中,第一层的折射率处于第一折射率与第二层的折射率之间,第二层的折射率处于第一层的折射率与第二折射率之间。In some embodiments, the refractive index of the first layer is between the first refractive index and the refractive index of the second layer, and the refractive index of the second layer is between the refractive index of the first layer and the second refractive index.
在某些实施方式中,第一保护层采用氮化硅形成,第一层采用氮氧化硅形成,第二层采用氧化硅形成,缓冲层采用高分子材料形成。In some embodiments, the first protective layer is formed of silicon nitride, the first layer is formed of silicon oxynitride, the second layer is formed of silicon oxide, and the buffer layer is formed of a polymer material.
在某些实施方式中,封装膜层还包括第二保护层,缓冲层设置在第一保护层和第二保护层之间。In some embodiments, the encapsulation film layer further includes a second protective layer, and the buffer layer is disposed between the first protective layer and the second protective layer.
在某些实施方式中,第二保护层具有第三折射率,第三折射率与第二折射率的差值大于预设折射率,封装膜层还包括第二过渡层,第二过渡层设置在缓冲层与第二保护层之间,第二过渡层的折射率处于第三折射率与第二折射率之间,第二过渡层采用氧化硅或氮氧化硅形成。In some embodiments, the second protective layer has a third refractive index, and the difference between the third refractive index and the second refractive index is greater than a preset refractive index. The encapsulation film layer further includes a second transition layer, and the second transition layer is arranged Between the buffer layer and the second protective layer, the refractive index of the second transition layer is between the third refractive index and the second refractive index, and the second transition layer is formed of silicon oxide or silicon oxynitride.
在某些实施方式中,封装膜层还包括第三过渡层,第三过渡层设置在第一保护层的远离缓冲层的一侧,第三过渡层的折射率处于第一折射率与空气的折射率之间,第二过渡层采用氧化硅或氮氧化硅形成。In some embodiments, the encapsulation film layer further includes a third transition layer, the third transition layer is disposed on the side of the first protective layer away from the buffer layer, and the refractive index of the third transition layer is at the level of the first refractive index and air. Between the refractive indices, the second transition layer is formed of silicon oxide or silicon oxynitride.
在某些实施方式中,第一过渡层的厚度小于第一预设厚度。In some embodiments, the thickness of the first transition layer is less than the first predetermined thickness.
在某些实施方式中,第二过渡层的厚度小于第二预设厚度。In some embodiments, the thickness of the second transition layer is less than the second predetermined thickness.
在某些实施方式中,第三过渡层的厚度小于第三预设厚度。In some embodiments, the thickness of the third transition layer is less than the third predetermined thickness.
本申请实施方式的显示屏包括显示层及封装膜层。显示层用于显示图像;显示层设于缓冲层的远离第一保护层的一侧。封装膜层包括第一保护层、缓冲层及第一过渡层。第一保护层具有第一折射率,缓冲层具有第二折射率,其中,第一折射率与第二折射率的差值大于预设折射率。缓冲层用于在封装膜层弯折时减小封装膜层承受的应力。第一过渡层设置在第一保护层与缓冲层之间,第一过渡层的折射率处于第一折射率与第二折射率之间。The display screen of the embodiment of the present application includes a display layer and an encapsulation film layer. The display layer is used for displaying images; the display layer is arranged on the side of the buffer layer away from the first protective layer. The packaging film layer includes a first protective layer, a buffer layer and a first transition layer. The first protective layer has a first refractive index, and the buffer layer has a second refractive index, wherein the difference between the first refractive index and the second refractive index is greater than the preset refractive index. The buffer layer is used to reduce the stress borne by the packaging film when the packaging film is bent. The first transition layer is arranged between the first protection layer and the buffer layer, and the refractive index of the first transition layer is between the first refractive index and the second refractive index.
在某些实施方式中,第一保护层采用氮化硅形成,缓冲层采用高分子材料形成。In some embodiments, the first protective layer is formed of silicon nitride, and the buffer layer is formed of a polymer material.
在某些实施方式中,第一过渡层采用氧化硅或氮氧化硅形成。In some embodiments, the first transition layer is formed of silicon oxide or silicon oxynitride.
在某些实施方式中,第一过渡层包括第一层和第二层,缓冲层、第二层、第一层及第一保护层依次层叠设置。In some embodiments, the first transition layer includes a first layer and a second layer, and the buffer layer, the second layer, the first layer, and the first protective layer are stacked in sequence.
在某些实施方式中,第一层的折射率处于第一折射率与第二层的折射率之间,第二层的折射率处于第一层的折射率与第二折射率之间。In some embodiments, the refractive index of the first layer is between the first refractive index and the refractive index of the second layer, and the refractive index of the second layer is between the refractive index of the first layer and the second refractive index.
在某些实施方式中,第一保护层采用氮化硅形成,第一层采用氮氧化硅形成,第二层采用氧化硅形成,缓冲层采用高分子材料形成。In some embodiments, the first protective layer is formed of silicon nitride, the first layer is formed of silicon oxynitride, the second layer is formed of silicon oxide, and the buffer layer is formed of a polymer material.
在某些实施方式中,封装膜层还包括第二保护层,缓冲层设置在第一保护层和第二保护层之间。In some embodiments, the encapsulation film layer further includes a second protective layer, and the buffer layer is disposed between the first protective layer and the second protective layer.
在某些实施方式中,第二保护层具有第三折射率,第三折射率与第二折射率的差值大于预设折射率,封装膜层还包括第二过渡层,第二过渡层设置在缓冲层与第二保护层之间,第二过渡层的折射率处于第三折射率与第二折射率之间,第二过渡层采用氧化硅或氮氧化硅形成。In some embodiments, the second protective layer has a third refractive index, and the difference between the third refractive index and the second refractive index is greater than a preset refractive index. The encapsulation film layer further includes a second transition layer, and the second transition layer is arranged Between the buffer layer and the second protective layer, the refractive index of the second transition layer is between the third refractive index and the second refractive index, and the second transition layer is formed of silicon oxide or silicon oxynitride.
在某些实施方式中,封装膜层还包括第三过渡层,第三过渡层设置在第一保护层的远离缓冲层的一侧,第三过渡层的折射率处于第一折射率与空气的折射率之间,第二过渡层采用氧化硅或氮氧化硅形成。In some embodiments, the encapsulation film layer further includes a third transition layer, the third transition layer is disposed on the side of the first protective layer away from the buffer layer, and the refractive index of the third transition layer is at the level of the first refractive index and air. Between the refractive indices, the second transition layer is formed of silicon oxide or silicon oxynitride.
在某些实施方式中,第一过渡层的厚度小于第一预设厚度。In some embodiments, the thickness of the first transition layer is less than the first predetermined thickness.
在某些实施方式中,第二过渡层的厚度小于第二预设厚度。In some embodiments, the thickness of the second transition layer is less than the second predetermined thickness.
在某些实施方式中,第三过渡层的厚度小于第三预设厚度。In some embodiments, the thickness of the third transition layer is less than the third predetermined thickness.
在某些实施方式中,显示层包括依次层叠设置的基板、阳极、发光层及阴极,其中,阴极和阳极用于对发光层通电以使发光层发光并显示图像;基板用于控制发光层发光以显示图像。In some embodiments, the display layer includes a substrate, an anode, a light-emitting layer, and a cathode that are stacked in sequence, wherein the cathode and the anode are used to energize the light-emitting layer to make the light-emitting layer emit light and display images; the substrate is used to control the light-emitting layer of the light-emitting layer. To display the image.
在某些实施方式中,显示屏还包括光取出层,光取出层设置在第二保护层与阴极之间,光取出层用于将发光层的光传导至封装膜层。In some embodiments, the display screen further includes a light extraction layer, the light extraction layer is disposed between the second protective layer and the cathode, and the light extraction layer is used to transmit light from the light emitting layer to the encapsulation film layer.
在某些实施方式中,基板具有第四折射率,显示屏还包括增透膜,增透膜设置在基板远离阳极的一侧,增透膜的折射率处于第四折射率与空气的折射率之间。In some embodiments, the substrate has a fourth refractive index, and the display screen further includes an anti-reflection coating. The anti-reflection coating is arranged on the side of the substrate away from the anode. The refractive index of the anti-reflection coating is between the fourth refractive index and the refractive index of air. between.
本申请实施方式的电子设备包括摄像头及显示屏,显示屏包括显示层及封装膜层。显示层用于显示图像;显示层设于缓冲层的远离第一保护层的一侧。封装膜层包括第一保护层、缓冲层及第一过渡层。第一保护层具有第一折射率,缓冲层具有第二折射率,其中,第一折射率与第二折射率的差值大于预设折射率。缓冲层用于在封装膜层弯折时减小封装膜层承受的应力。第一过渡层设置在第一保护层与缓冲层之间,第一过渡层的折射率处于第一折射率与第二折射率之间。显示层包括用于显示图像的显示区,显示区形成有相背的正面及背面,显示屏发出的光线沿背面指向正面的方向、并经过缓冲层、第一过渡层和第一保护层后向外界发射,摄像头设置在显示层的背面所在一侧。The electronic device of the embodiment of the present application includes a camera and a display screen, and the display screen includes a display layer and an encapsulation film layer. The display layer is used for displaying images; the display layer is arranged on the side of the buffer layer away from the first protective layer. The packaging film layer includes a first protective layer, a buffer layer and a first transition layer. The first protective layer has a first refractive index, and the buffer layer has a second refractive index, wherein the difference between the first refractive index and the second refractive index is greater than the preset refractive index. The buffer layer is used to reduce the stress borne by the packaging film when the packaging film is bent. The first transition layer is arranged between the first protection layer and the buffer layer, and the refractive index of the first transition layer is between the first refractive index and the second refractive index. The display layer includes a display area for displaying images. The display area is formed with opposite front and back sides. The light emitted by the display screen is directed toward the front along the back and passes through the buffer layer, the first transition layer and the first protective layer. For external emission, the camera is set on the side of the back of the display layer.
请参阅图1,本申请实施方式的封装膜层10包括第一保护层11、缓冲层12及第一过渡层13。第一保护层11具有第一折射率,缓冲层12具有第二折射率,第一折射率与第二折射率的差值大于或等于预设折射率。缓冲层12用于在封装膜层10弯折时减小封装膜层10承受的应力。第一过渡层13设置在第一保护层11与缓冲层12之间,第一过渡层13的折射率处于第一折射率与第二折射率之间。Please refer to FIG. 1, the packaging film layer 10 of the embodiment of the present application includes a first protective layer 11, a buffer layer 12 and a first transition layer 13. The first protective layer 11 has a first refractive index, and the buffer layer 12 has a second refractive index, and the difference between the first refractive index and the second refractive index is greater than or equal to the preset refractive index. The buffer layer 12 is used to reduce the stress borne by the packaging film layer 10 when the packaging film layer 10 is bent. The first transition layer 13 is disposed between the first protection layer 11 and the buffer layer 12, and the refractive index of the first transition layer 13 is between the first refractive index and the second refractive index.
需要说明的是,第一保护层11、缓冲层12及第一过渡层13均为透明材料形成,以使得光线能在第一保护层11、缓冲层12及第一过渡层13之间传播。光线由一个介质进入另一个介质时,由于两个介质的折射率不相同,光线会发生相应的折射和反射。光线在多个介质之间发生反射时,是根据两个介质之间的折射率的差值决定光线的反射率,反射率是指一个单位的光中反射的光线占整个单位的光 的比值。例如,有一束光线在第一保护层11和缓冲层12之间传播,封装膜层10的反射率为7.28%,即该束光线中的7.28%的光线会在第一保护层11或缓冲层12内进行反射。两个介质之间的折射率相差越大,则对应的反射率则越大,表明光线在这两个介质之间发生反射的比例更大。因此,在第一保护层11的第一折射率与缓冲层12的第二折射率的差值大于或等于预设折射率时,则在第一保护层11和缓冲层12之间设置第一过渡层13,第一过渡层13的折射率处于第一折射率与第二折射率之间,以降低光线在经过第一保护层11和缓冲层12时的反射率。It should be noted that the first protective layer 11, the buffer layer 12 and the first transition layer 13 are all made of transparent materials, so that light can propagate between the first protective layer 11, the buffer layer 12 and the first transition layer 13. When light enters another medium from one medium, the light will be refracted and reflected due to the different refractive indexes of the two mediums. When light is reflected between multiple media, the reflectivity of the light is determined based on the difference in refractive index between the two media. The reflectivity refers to the ratio of the reflected light in a unit of light to the entire unit of light. For example, if a beam of light propagates between the first protective layer 11 and the buffer layer 12, the reflectivity of the encapsulation film layer 10 is 7.28%, that is, 7.28% of the beam of light will be on the first protective layer 11 or buffer layer. Reflect within 12. The greater the difference in refractive index between the two media, the greater the corresponding reflectivity, indicating that the proportion of light reflected between the two media is greater. Therefore, when the difference between the first refractive index of the first protective layer 11 and the second refractive index of the buffer layer 12 is greater than or equal to the preset refractive index, the first protective layer 11 and the buffer layer 12 are provided between the first refractive index. For the transition layer 13, the refractive index of the first transition layer 13 is between the first refractive index and the second refractive index, so as to reduce the reflectivity of light when passing through the first protective layer 11 and the buffer layer 12.
其中,预设折射率可为一个预先设定的已知值,该预设折射率可为(0,1.00],例如,预设折射率可为0.01、0.02、0.05、0.1、0.11、0.12、0.20、0.30、0.31、0.32、0.33、0.35、0.38、0.40、0.50、1.00等等。以预设折射率为0.20为例进行说明,在得到第一折射率与第二折射率的差值为0.3时,说明第一保护层11与缓冲层12之间的折射率相差较大,则该封装膜层10内的反射率较大,因此,可在该封装膜层10中设置第一过渡层13,以降低封装膜层10内的反射率。Wherein, the preset refractive index may be a preset known value, the preset refractive index may be (0, 1.00], for example, the preset refractive index may be 0.01, 0.02, 0.05, 0.1, 0.11, 0.12, 0.20, 0.30, 0.31, 0.32, 0.33, 0.35, 0.38, 0.40, 0.50, 1.00, etc. Take the preset refractive index of 0.20 as an example for illustration, and the difference between the first refractive index and the second refractive index is 0.3 When the refractive index difference between the first protective layer 11 and the buffer layer 12 is large, the reflectivity in the encapsulation film layer 10 is relatively large. Therefore, the first transition layer 13 can be provided in the encapsulation film layer 10. , In order to reduce the reflectivity in the packaging film layer 10.
封装膜层的反射率较大会导致光线穿过封装膜层时会发生严重的反射现象,从而不利于光线穿过显示屏,使得处于显示屏下的摄像头的成像效果较差。并且,处于封装膜层下方的显示屏发出的光在经过封装膜层时,也会发生严重的反射,由于部分显示屏的光线被反射,导致用户看到的显示屏图像为失真图像,降低了用户体验。The high reflectivity of the packaging film layer will cause serious reflection of light when passing through the packaging film layer, which is not conducive to the light passing through the display screen, and the imaging effect of the camera under the display screen is poor. In addition, the light emitted by the display screen under the encapsulation film layer will also be seriously reflected when passing through the encapsulation film layer. As part of the light from the display screen is reflected, the screen image that the user sees is distorted, which reduces user experience.
本申请实施方式的封装膜层10在第一保护层11和缓冲层12之间设置第一过渡层13,第一过渡层13的折射率处于第一保护层11的折射率和缓冲层12的折射率之间,使得光线能在折射率相差较小的第一保护层11和第一过渡层13之间、及在折射率相差较小的第一过渡层13和缓冲层12之间传播。一方面,相较于光线直接穿过第一保护层11和缓冲层12,光线依次穿过第一保护层11、第一过渡层13、及缓冲层12的反射率更小,由于减少了在第一保护层11与缓冲层12之间发生的反射,有利于光线更好地穿过封装膜层10,设置在屏下的摄像头能够接收到更多的光线,成像品质较佳。另一方面,显示屏100(图15所示)发出的光线在缓冲层12和第一过渡层13、第一过渡层13和第一保护层11之间传播时的反射率更小,使得用户看到的显示屏100的图像更加清晰,提高了用户体验。In the encapsulation film layer 10 of the embodiment of the present application, a first transition layer 13 is provided between the first protective layer 11 and the buffer layer 12, and the refractive index of the first transition layer 13 is between the refractive index of the first protective layer 11 and the buffer layer 12 Between the refractive indexes, light can propagate between the first protective layer 11 and the first transition layer 13 with a small difference in refractive index, and between the first transition layer 13 and the buffer layer 12 with a small difference in refractive index. On the one hand, compared to light directly passing through the first protective layer 11 and the buffer layer 12, the reflectivity of the light passing through the first protective layer 11, the first transition layer 13, and the buffer layer 12 in turn is smaller, due to the reduction in The reflection between the first protective layer 11 and the buffer layer 12 is beneficial for light to pass through the packaging film layer 10 better, and the camera arranged under the screen can receive more light, and the imaging quality is better. On the other hand, the light emitted by the display screen 100 (shown in FIG. 15) has a smaller reflectivity when propagating between the buffer layer 12 and the first transition layer 13, the first transition layer 13 and the first protection layer 11, making the user The seen image of the display screen 100 is clearer, which improves the user experience.
在某些实施方式中,第一保护层11可采用氮化硅形成,氮化硅的结构比较致密,能有效防止外界的水汽、氧气等进入封装膜层10内,从而防止对封装膜层10保护的元件(例如指纹模组或图8所示的显示层20)造成损坏。缓冲层12采用高分子材料形成,高分子材料可包括含氟树脂。含氟树脂可为聚四氟乙烯,该材料的介电性能优异,且柔韧性高。缓冲层12有效增加了封装膜层10的柔韧性,减小了封装膜层10在弯折时承受的压力,避免了封装膜层10发生破裂。In some embodiments, the first protective layer 11 may be formed of silicon nitride. The structure of silicon nitride is relatively dense, which can effectively prevent external water vapor, oxygen, etc. from entering the packaging film layer 10, thereby preventing damage to the packaging film layer 10. The protected components (such as the fingerprint module or the display layer 20 shown in FIG. 8) cause damage. The buffer layer 12 is formed of a polymer material, and the polymer material may include a fluorine-containing resin. The fluorine-containing resin may be polytetrafluoroethylene, which has excellent dielectric properties and high flexibility. The buffer layer 12 effectively increases the flexibility of the packaging film layer 10, reduces the pressure that the packaging film layer 10 bears when bending, and prevents the packaging film layer 10 from cracking.
其中,第一保护层11的厚度可以为1000nm,即氮化硅层的厚度可以为1000nm,此时,氮化硅对波长为550nm的可见光的折射率为1.85,即第一折射率为1.85。缓冲层12的厚度可以为8000nm,即高分子材料层的厚度可以为8000nm,此时,高分子材料对波长为550nm的可见光的折射率为1.52,即第二折射率为1.52。第一折射率与第二折射率之间的差值为0.33。The thickness of the first protective layer 11 may be 1000 nm, that is, the thickness of the silicon nitride layer may be 1000 nm. At this time, the refractive index of silicon nitride to visible light with a wavelength of 550 nm is 1.85, that is, the first refractive index is 1.85. The thickness of the buffer layer 12 may be 8000 nm, that is, the thickness of the polymer material layer may be 8000 nm. At this time, the refractive index of the polymer material to visible light with a wavelength of 550 nm is 1.52, that is, the second refractive index is 1.52. The difference between the first refractive index and the second refractive index is 0.33.
在某些实施方式中,第一过渡层13可采用折射率处于第二折射率和第一折射率之间的任意材料。例如,第一过渡层13可采用折射率在(1.52,1.85)之间的任意材料。需要说明的是,该材料需为可透光材料。其中,第一过渡层13可采用氧化硅形成,氧化硅对波长为550nm的可见光的折射率为1.65。此时封装膜层10可包括依次层叠设置的高分子材料层、氧化硅层、及氮化硅层,则氮化硅层与氧化硅层之间的折射率的差值为1.85-1.65=0.20。相较于氮化硅层与高分子材料层之间的折射率的差值0.33,氮化硅层与氧化硅层之间的折射率差值更小。即,相较于光线在氮化硅层与高分子材料层之间的反射 率,光线在氮化硅层与氧化硅层之间的反射率更小。换而言之,光线在氮化硅层与氧化硅层之间更不容易发生反射。同理,氧化硅层与高分子材料层之间的折射率的差值为1.65-1.52=0.13,即光线在氧化硅层与高分子材料层之间的反射率更小。也就是说,封装膜层10通过在氮化硅层和高分子材料层之间增加了一层氧化硅,减小了光线在该封装膜层10中的反射率。In some embodiments, the first transition layer 13 may use any material whose refractive index is between the second refractive index and the first refractive index. For example, the first transition layer 13 can be any material with a refractive index between (1.52, 1.85). It should be noted that the material needs to be a transparent material. Wherein, the first transition layer 13 may be formed of silicon oxide, and the refractive index of silicon oxide to visible light with a wavelength of 550 nm is 1.65. At this time, the packaging film layer 10 may include a polymer material layer, a silicon oxide layer, and a silicon nitride layer stacked in sequence, and the difference in refractive index between the silicon nitride layer and the silicon oxide layer is 1.85-1.65=0.20 . Compared with the refractive index difference between the silicon nitride layer and the polymer material layer of 0.33, the refractive index difference between the silicon nitride layer and the silicon oxide layer is smaller. That is, compared with the reflectance of light between the silicon nitride layer and the polymer material layer, the reflectance of light between the silicon nitride layer and the silicon oxide layer is smaller. In other words, light is less likely to be reflected between the silicon nitride layer and the silicon oxide layer. Similarly, the difference in refractive index between the silicon oxide layer and the polymer material layer is 1.65-1.52=0.13, that is, the reflectivity of light between the silicon oxide layer and the polymer material layer is smaller. In other words, the packaging film layer 10 reduces the reflectivity of light in the packaging film layer 10 by adding a layer of silicon oxide between the silicon nitride layer and the polymer material layer.
第一过渡层13还可采用氮氧化硅形成,氮氧化硅对波长为550nm的可见光的折射率为1.75。此时封装膜层10可包括依次层叠设置的高分子材料层、氮氧化硅层及氮化硅层,则氮化硅层与氮氧化硅层之间的折射率的差值为1.85-1.75=0.10,相较于氮化硅层与高分子材料层之间的折射率的差值0.33,氮化硅层与氮氧化硅层之间的折射率差值更小。同理,氮氧化硅层与高分子材料层之间的折射率的差值为1.75-1.52=0.23,即光线在氮氧化硅层与高分子材料层之间的反射率更小。也就是说,封装膜层10通过在氮化硅层和高分子材料层之间增加了一层氮氧化硅,减小了光线在该封装膜层10中的反射率。The first transition layer 13 can also be formed of silicon oxynitride, and the refractive index of silicon oxynitride to visible light with a wavelength of 550 nm is 1.75. At this time, the packaging film layer 10 may include a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer stacked in sequence, and the difference in refractive index between the silicon nitride layer and the silicon oxynitride layer is 1.85-1.75= 0.10, compared with the refractive index difference between the silicon nitride layer and the polymer material layer of 0.33, the refractive index difference between the silicon nitride layer and the silicon oxynitride layer is smaller. Similarly, the difference in refractive index between the silicon oxynitride layer and the polymer material layer is 1.75-1.52=0.23, that is, the reflectivity of light between the silicon oxynitride layer and the polymer material layer is smaller. In other words, the packaging film layer 10 reduces the reflectivity of light in the packaging film layer 10 by adding a layer of silicon oxynitride between the silicon nitride layer and the polymer material layer.
第一过渡层13还可采用三氧化二铝或者三氧化钨等材料,其中,三氧化二铝对波长为550nm的可见光的折射率为1.63,三氧化钨对波长为550nm的可见光的折射率为1.70。当封装膜层10包括依次层叠设置的高分子材料层、三氧化二铝层及氮化硅层,则氮化硅层与三氧化二铝层之间的折射率的差值为1.85-1.63=0.22,高分子材料层与三氧化二铝层之间的折射率的差值为1.63-1.52=0.11,相较于氮化硅层与高分子材料层之间的折射率的差值0.33,氮化硅层与三氧化二铝层之间的折射率的差值更小,高分子材料层与三氧化二铝层之间的折射率的差值也更小。也就是说,封装膜层10通过在氮化硅层和高分子材料层之间增加了一层三氧化二铝,减小了光线在该封装膜层10中的反射率。The first transition layer 13 can also be made of aluminum oxide or tungsten trioxide, wherein the refractive index of aluminum oxide to visible light with a wavelength of 550nm is 1.63, and the refractive index of tungsten trioxide to visible light with a wavelength of 550nm is 1.70. When the packaging film layer 10 includes a polymer material layer, an aluminum oxide layer, and a silicon nitride layer stacked in sequence, the difference in refractive index between the silicon nitride layer and the aluminum oxide layer is 1.85-1.63= 0.22, the refractive index difference between the polymer material layer and the aluminum oxide layer is 1.63-1.52=0.11, compared with the refractive index difference between the silicon nitride layer and the polymer material layer of 0.33, nitrogen The difference in refractive index between the silicon dioxide layer and the aluminum oxide layer is smaller, and the difference in refractive index between the polymer material layer and the aluminum oxide layer is also smaller. In other words, the packaging film layer 10 reduces the reflectivity of light in the packaging film layer 10 by adding a layer of aluminum oxide between the silicon nitride layer and the polymer material layer.
当封装膜层10包括依次层叠设置的高分子材料层、三氧化钨层及氮化硅层,则氮化硅层与三氧化钨层之间的折射率的差值为1.85-1.70=0.15,高分子材料层与三氧化钨层之间的折射率的差值为1.70-1.52=0.18,相较于氮化硅层与高分子材料层之间的折射率的差值0.33,氮化硅层与三氧化钨层之间的折射率的差值更小,高分子材料层与三氧化钨层之间的折射率的差值也更小。也就是说,封装膜层10通过在氮化硅层和高分子材料层之间增加了一层三氧化钨,减小了光线在该封装膜层10中的反射率。When the packaging film layer 10 includes a polymer material layer, a tungsten trioxide layer, and a silicon nitride layer stacked in sequence, the difference in refractive index between the silicon nitride layer and the tungsten trioxide layer is 1.85-1.70=0.15, The refractive index difference between the polymer material layer and the tungsten trioxide layer is 1.70-1.52=0.18, which is 0.33 compared to the refractive index difference between the silicon nitride layer and the polymer material layer of 0.33, and the silicon nitride layer The refractive index difference with the tungsten trioxide layer is smaller, and the refractive index difference between the polymer material layer and the tungsten trioxide layer is also smaller. In other words, the packaging film layer 10 reduces the reflectivity of light in the packaging film layer 10 by adding a layer of tungsten trioxide between the silicon nitride layer and the polymer material layer.
由于在制取氧化硅和氮氧化硅时,与制取氮化硅的工艺相似,可通过控制通入不同的气体来制取相应的氧化硅、氮氧化硅和氮化硅。这些气体可包括甲硅烷、氧气及氨气等等。相较于采用其他材料形成的第一过渡层13,采用氧化硅或氮氧化硅形成的第一过渡层13,其制取工艺更加简单,可简单地通过控制不同的气体即可得到对应所需的材料,无需在制备上添加新的工艺。Since the preparation of silicon oxide and silicon oxynitride is similar to the preparation of silicon nitride, the corresponding silicon oxide, silicon oxynitride and silicon nitride can be prepared by controlling the introduction of different gases. These gases can include monosilane, oxygen, ammonia, and so on. Compared with the first transition layer 13 made of other materials, the first transition layer 13 made of silicon oxide or silicon oxynitride has a simpler preparation process. The corresponding requirements can be obtained simply by controlling different gases. No need to add a new process to the preparation.
请参阅图2,在某些实施方式中,第一过渡层13可包括第一层131和第二层132,该封装膜层10可包括依次层叠设置的缓冲层12、第二层132、第一层131及第一保护层11。其中,第一过渡层13的第一层131的折射率处于第一保护层11的第一折射率与第二层132的折射率之间;第一过渡层13的第二层132的折射率处于第一层131的折射率与缓冲层12的第二折射率之间。例如,第一保护层11采用氮化硅形成,即第一折射率为1.85,第一过渡层13的第一层131采用氮氧化硅形成,即第一过渡层13的第一层131的折射率为1.75,第一过渡层13的第二层132采用氧化硅形成,即第一过渡层13的第二层132的折射率为1.65,缓冲层12可采用高分子材料形成,该高分子材料可为含氟树脂,即第二折射率为1.52。此时,该封装膜层10中,第一保护层11、第一过渡层13的第一层131、第一过渡层13的第二层132和缓冲层12的相邻两层之间的折射率的差值相较氮化硅层与高分子材料层之间的折射率的差值更小,进一步降低了该封装膜层10整体的反射率;而且,第一保护层11、第一过渡层13的第一层131、第一过渡层13的第二层132和缓冲层12的折射率是依次减小的,相邻两层之间的 折射率的差值均为一个较小的值,进一步降低了该封装膜层10整体的反射率。Referring to FIG. 2, in some embodiments, the first transition layer 13 may include a first layer 131 and a second layer 132, and the packaging film layer 10 may include a buffer layer 12, a second layer 132, and a second layer 132 stacked in sequence. One layer 131 and the first protective layer 11. Wherein, the refractive index of the first layer 131 of the first transition layer 13 is between the first refractive index of the first protective layer 11 and the refractive index of the second layer 132; the refractive index of the second layer 132 of the first transition layer 13 It is between the refractive index of the first layer 131 and the second refractive index of the buffer layer 12. For example, the first protective layer 11 is formed of silicon nitride, that is, the first refractive index is 1.85, and the first layer 131 of the first transition layer 13 is formed of silicon oxynitride, that is, the refractive index of the first layer 131 of the first transition layer 13 is The second layer 132 of the first transition layer 13 is formed of silicon oxide. That is, the refractive index of the second layer 132 of the first transition layer 13 is 1.65. The buffer layer 12 can be formed of a polymer material. It may be a fluorine-containing resin, that is, the second refractive index is 1.52. At this time, in the packaging film layer 10, the refraction between the first protective layer 11, the first layer 131 of the first transition layer 13, the second layer 132 of the first transition layer 13, and the two adjacent layers of the buffer layer 12 The difference in refractive index is smaller than the difference in refractive index between the silicon nitride layer and the polymer material layer, which further reduces the overall reflectivity of the packaging film layer 10; moreover, the first protective layer 11 and the first transition layer The refractive index of the first layer 131 of the layer 13, the second layer 132 of the first transition layer 13 and the buffer layer 12 are successively reduced, and the difference in refractive index between the two adjacent layers is all a small value , Further reducing the overall reflectivity of the packaging film layer 10.
在某些实施方式中,第一过渡层13的第一层131的折射率和第一过渡层13的第二层132的折射率的大小可调换。例如,第一保护层11采用氮化硅形成,即第一折射率为1.85。第一过渡层13的第一层131采用氧化硅形成,即第一过渡层13的第一层131的折射率为1.65。第一过渡层13的第二层132采用氮氧化硅形成,即第一过渡层13的第二层132的折射率为1.75。缓冲层12可采用高分子材料形成,该高分子材料可为含氟树脂,即第二折射率为1.52。此时,相较于封装膜层10仅包括第一保护层11和缓冲层12的情况,在第一保护层11和缓冲层12之间增加两层第一过渡层13,使得封装膜层10的相邻两层膜层之间的折射率差值较小,即封装膜层10的反射率更小。In some embodiments, the refractive index of the first layer 131 of the first transition layer 13 and the refractive index of the second layer 132 of the first transition layer 13 are switchable. For example, the first protective layer 11 is formed of silicon nitride, that is, the first refractive index is 1.85. The first layer 131 of the first transition layer 13 is formed of silicon oxide, that is, the refractive index of the first layer 131 of the first transition layer 13 is 1.65. The second layer 132 of the first transition layer 13 is formed of silicon oxynitride, that is, the refractive index of the second layer 132 of the first transition layer 13 is 1.75. The buffer layer 12 may be formed of a polymer material, and the polymer material may be a fluorine-containing resin, that is, the second refractive index is 1.52. At this time, compared to the case where the packaging film layer 10 only includes the first protective layer 11 and the buffer layer 12, two first transition layers 13 are added between the first protective layer 11 and the buffer layer 12, so that the packaging film layer 10 The refractive index difference between two adjacent film layers is smaller, that is, the reflectivity of the packaging film layer 10 is smaller.
在某些实施方式中,第一过渡层13的厚度小于或等于第一预设厚度。第一预设厚度可为[80nm,220nm]中的任意值,例如,第一预设厚度可为80nm、90nm、100nm、110nm、120nm、130nm、140nm、150nm、160nm、170nm、180nm、190nm、200nm、210nm、220nm等等。在本申请实施方式中,第一预设厚度为200nm。在第一过渡层13采用氧化硅形成时,该第一过渡层13的厚度可为95nm;在第一过渡层13采用一层氮氧化硅形成时,该第一过渡层13的厚度可为80nm;在第一过渡层13采用一层氧化硅和一层氮氧化硅形成时,该第一过渡层13的厚度可为175nm。当然,第一过渡层13还可为其他厚度,在此不再一一列举。由于第一保护层11的厚度可为1000nm,缓冲层12的厚度可为8000nm,因此,第一过渡层13的厚度在小于或等于第一预设厚度时,第一过渡层13的厚度对整个封装膜层10的厚度影响较小,封装膜层10更轻薄。In some embodiments, the thickness of the first transition layer 13 is less than or equal to the first preset thickness. The first preset thickness can be any value in [80nm, 220nm], for example, the first preset thickness can be 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 160nm, 170nm, 180nm, 190nm, 200nm, 210nm, 220nm and so on. In the embodiment of the present application, the first predetermined thickness is 200 nm. When the first transition layer 13 is formed of silicon oxide, the thickness of the first transition layer 13 may be 95 nm; when the first transition layer 13 is formed of a layer of silicon oxynitride, the thickness of the first transition layer 13 may be 80 nm When the first transition layer 13 is formed using a layer of silicon oxide and a layer of silicon oxynitride, the thickness of the first transition layer 13 may be 175 nm. Of course, the first transition layer 13 can also have other thicknesses, which will not be listed here. Since the thickness of the first protective layer 11 may be 1000 nm, and the thickness of the buffer layer 12 may be 8000 nm, therefore, when the thickness of the first transition layer 13 is less than or equal to the first preset thickness, the thickness of the first transition layer 13 is The thickness of the packaging film layer 10 has less influence, and the packaging film layer 10 is lighter and thinner.
请参阅图3,本申请实施方式的封装膜层10还可包括第二保护层14,缓冲层12设置在第一保护层11和第二保护层14之间。第一保护层11和第二保护层14可对封装膜层10保护的元件(例如指纹模组或图8所示的显示层20)进行有效的保护。其中,第二保护层14可与第一保护层11的材料相同,例如,第二保护层14由氮化硅形成。当然,第二保护层14可与第一保护层11的材料不相同。在本申请实施方式中,第一保护层11和第二保护层14均采用氮化硅形成,氮化硅材料的结构的致密性能够满足正常使用的要求,由于氮化硅的制造工艺相对简单,因此能够降低封装膜层10的制造成本。采用氮化硅形成的第二保护层14可以避免水汽、氧气等穿过第二保护层14对封装膜层10保护的元件(例如指纹模组或图8所示的显示层20)造成损坏。Referring to FIG. 3, the packaging film layer 10 of the embodiment of the present application may further include a second protective layer 14, and the buffer layer 12 is disposed between the first protective layer 11 and the second protective layer 14. The first protection layer 11 and the second protection layer 14 can effectively protect the components protected by the packaging film layer 10 (for example, a fingerprint module or the display layer 20 shown in FIG. 8 ). The material of the second protection layer 14 may be the same as the material of the first protection layer 11, for example, the second protection layer 14 is formed of silicon nitride. Of course, the material of the second protective layer 14 may be different from that of the first protective layer 11. In the embodiment of the present application, the first protective layer 11 and the second protective layer 14 are both formed of silicon nitride, and the compactness of the structure of the silicon nitride material can meet the requirements of normal use, because the manufacturing process of silicon nitride is relatively simple Therefore, the manufacturing cost of the packaging film layer 10 can be reduced. The second protective layer 14 formed of silicon nitride can prevent moisture, oxygen, etc. from passing through the second protective layer 14 from damaging the components protected by the packaging film layer 10 (for example, the fingerprint module or the display layer 20 shown in FIG. 8 ).
请参阅图4,在某些实施方式中,第二保护层14具有第三折射率,由于第二保护层14与第一保护层11均为氮化硅,因此,第三折射率可与第一折射率相同,均可为1.85。在第三折射率与第二折射率的差值大于或等于预设折射率时,说明缓冲层12与第二保护层14之间的折射率相差较大,因此,可在该封装膜层10中设置第二过渡层15,第二过渡层15的折射率处于第三折射率与第二折射率之间,以降低封装膜层10的反射率。在第三折射率与第二折射率的差值小于预设折射率时,说明缓冲层12与第二保护层14之间的折射率相差较小,则该封装膜层10内的反射率较小,因此,无需在该封装膜层10中设置第二过渡层15。Referring to FIG. 4, in some embodiments, the second protective layer 14 has a third refractive index. Since the second protective layer 14 and the first protective layer 11 are both silicon nitride, the third refractive index may be the same as the third refractive index. A refractive index is the same, both can be 1.85. When the difference between the third refractive index and the second refractive index is greater than or equal to the preset refractive index, it indicates that the refractive index difference between the buffer layer 12 and the second protective layer 14 is relatively large. A second transition layer 15 is provided in the middle, and the refractive index of the second transition layer 15 is between the third refractive index and the second refractive index, so as to reduce the reflectivity of the packaging film layer 10. When the difference between the third refractive index and the second refractive index is less than the preset refractive index, it means that the refractive index difference between the buffer layer 12 and the second protective layer 14 is relatively small, and the reflectivity in the packaging film layer 10 is relatively high. Therefore, there is no need to provide the second transition layer 15 in the packaging film layer 10.
在某些实施方式中,第二过渡层15可采用氧化硅形成。在第一过渡层13采用氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氧化硅层、高分子材料层、氧化硅层及氮化硅层。在第一过渡层13采用氮氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氧化硅层、高分子材料层、氮氧化硅层及氮化硅层。在第一过渡层13包括第一层131和第二层132时,该封装膜层10可包括依次层叠设置的氮化硅层、氧化硅层、高分子材料层、氮氧化硅层、氧化硅层及氮化硅层;或者该封装膜层10可包括依次层叠设置的氮化硅层、氧化硅层、高分子材料层、氧化硅层、氮氧化硅层、 及氮化硅层。In some embodiments, the second transition layer 15 may be formed of silicon oxide. When the first transition layer 13 is formed of silicon oxide, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, and a silicon nitride layer stacked in sequence. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer stacked in sequence. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film layer 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon oxide layer stacked in sequence. Or the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer stacked in sequence.
在某些实施方式中,第二过渡层15可采用氮氧化硅形成。在第一过渡层13采用氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氮氧化硅层、高分子材料层、氧化硅层及氮化硅层。在第一过渡层13采用氮氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氮氧化硅层、高分子材料层、氮氧化硅层及氮化硅层。在第一过渡层13包括第一层131和第二层132时,该封装膜层10可包括依次层叠设置的氮化硅层、氮氧化硅层、高分子材料层、氧化硅层、氮氧化硅层及氮化硅层;或者该封装膜层10可包括依次层叠设置的氮化硅层、氮氧化硅层、高分子材料层、氮氧化硅层、氧化硅层及氮化硅层。In some embodiments, the second transition layer 15 may be formed of silicon oxynitride. When the first transition layer 13 is formed of silicon oxide, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, and a silicon nitride layer stacked in sequence. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer stacked in sequence. When the first transition layer 13 includes the first layer 131 and the second layer 132, the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, and an oxynitride layer that are stacked in sequence. A silicon layer and a silicon nitride layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon oxide layer, and a silicon nitride layer stacked in sequence.
请参阅图5,在某些实施方式中,第二过渡层15可包括第一层151和第二层152,第二过渡层15的第一层151可采用氧化硅形成,第二过渡层15的第二层152可采用氮氧化硅形成。在第一过渡层13采用氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氮氧化硅层、氧化硅层、高分子材料层、氧化硅层及氮化硅层。在第一过渡层13采用氮氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氮氧化硅层、氧化硅层、高分子材料层、氮氧化硅层及氮化硅层。在第一过渡层13包括第一层131和第二层132时,该封装膜层10可包括依次层叠设置的氮化硅层、氮氧化硅层、氧化硅层、高分子材料层、氮氧化硅层、氧化硅层及氮化硅层;或者该封装膜层10可包括依次层叠设置的氮化硅层、氮氧化硅层、氧化硅层、高分子材料层、氧化硅层、氮氧化硅层及氮化硅层。5, in some embodiments, the second transition layer 15 may include a first layer 151 and a second layer 152, the first layer 151 of the second transition layer 15 may be formed of silicon oxide, and the second transition layer 15 The second layer 152 can be formed of silicon oxynitride. When the first transition layer 13 is formed of silicon oxide, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, and a silicon nitride layer stacked in sequence. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer stacked in sequence. Floor. When the first transition layer 13 includes the first layer 131 and the second layer 132, the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, and an oxynitride layer that are sequentially stacked. A silicon layer, a silicon oxide layer, and a silicon nitride layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, and a silicon oxynitride layer stacked in sequence. Layer and silicon nitride layer.
当然,第二过渡层15的第一层151和第二过渡层15的第二层152的材料可调换。例如,第二过渡层15的第一层151可采用氮氧化硅形成,第二过渡层15的第二层152可采用氧化硅形成。此时,在第一过渡层13采用氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氧化硅层、氮氧化硅层、高分子材料层、氧化硅层及氮化硅层。在第一过渡层13采用氮氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氧化硅层、氮氧化硅层、高分子材料层、氮氧化硅层及氮化硅层。在第一过渡层13包括第一层131和第二层132时,该封装膜层10可包括依次层叠设置的氮化硅层、氧化硅层、氮氧化硅层、高分子材料层、氮氧化硅层、氧化硅层及氮化硅层;或该封装膜层10可包括依次层叠设置的氮化硅层、氧化硅层、氮氧化硅层、高分子材料层、氧化硅层、氮氧化硅层及氮化硅层。Of course, the materials of the first layer 151 of the second transition layer 15 and the second layer 152 of the second transition layer 15 can be exchanged. For example, the first layer 151 of the second transition layer 15 may be formed of silicon oxynitride, and the second layer 152 of the second transition layer 15 may be formed of silicon oxide. At this time, when the first transition layer 13 is formed of silicon oxide, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, and a nitride layer that are sequentially stacked. Silicon layer. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer that are sequentially stacked. Floor. When the first transition layer 13 includes the first layer 131 and the second layer 132, the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, and an oxynitride layer that are sequentially stacked. A silicon layer, a silicon oxide layer, and a silicon nitride layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, and a silicon oxynitride layer stacked in sequence. Layer and silicon nitride layer.
在某些实施方式中,第二过渡层15的厚度小于或等于第二预设厚度。第二预设厚度可与第一预设厚度相同,在此不再赘述。当然,第二预设厚度也可与第一预设厚度不一样,例如,第二预设厚度大于第一预设厚度,或者第二预设厚度小于第一预设厚度,在此不再一一列举。In some embodiments, the thickness of the second transition layer 15 is less than or equal to the second predetermined thickness. The second preset thickness can be the same as the first preset thickness, and will not be repeated here. Of course, the second preset thickness may also be different from the first preset thickness. For example, the second preset thickness is greater than the first preset thickness, or the second preset thickness is less than the first preset thickness. One enumerate.
请参阅图6,本申请实施方式的封装膜层10还可包括第三过渡层16。第三过渡层16设置在第一保护层11的远离缓冲层12的一侧。第三过渡层16的折射率可处于第一保护层11的第一折射率与空气折射率之间。其中,第三过渡层16可为一层或可为两层。第三过渡层16可与不同材料和层数的第一过渡层13和/或不同材料和层数的第二过渡层15任意组合。Please refer to FIG. 6, the packaging film layer 10 of the embodiment of the present application may further include a third transition layer 16. The third transition layer 16 is disposed on the side of the first protection layer 11 away from the buffer layer 12. The refractive index of the third transition layer 16 may be between the first refractive index of the first protective layer 11 and the refractive index of air. Wherein, the third transition layer 16 may be one layer or two layers. The third transition layer 16 can be arbitrarily combined with the first transition layer 13 of different materials and layers and/or the second transition layer 15 of different materials and layers.
在某些实施方式中,第三过渡层16可采用氧化硅形成,第二过渡层15可采用氧化硅形成。在第一过渡层13采用氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氧化硅层、高分子材料层、氧化硅层、氮化硅层及氧化硅层。在第一过渡层13采用氮氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氧化硅层、高分子材料层、氮氧化硅层、氮化硅层及氧化硅层。在第一过渡层13包括第一层131和第二层132时,该封装膜层10可包括依次层叠设置的氮化硅层、氧化硅层、高分子材料层、氮氧化硅层、氧化硅层、氮化硅层及氧化硅层;或者该封装膜层10可包括依次层叠设置的氮化硅层、氧化硅层、高分子材料层、氧化硅层、氮氧化硅层、氮化硅层及氧化硅层。In some embodiments, the third transition layer 16 may be formed of silicon oxide, and the second transition layer 15 may be formed of silicon oxide. When the first transition layer 13 is formed of silicon oxide, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxide layer stacked in sequence. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxide layer stacked in sequence. . When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film layer 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon oxide layer stacked in sequence. Layer, silicon nitride layer, and silicon oxide layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer stacked in sequence And silicon oxide layer.
在某些实施方式中,第三过渡层16可采用氧化硅形成,第二过渡层15可采用氮氧化硅形成。在第一过渡层13采用氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氮氧化硅层、高分子材料层、氧化硅层、氮化硅层及氧化硅层。在第一过渡层13采用氮氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氮氧化硅层、高分子材料层、氮氧化硅层、氮化硅层及氧化硅层。在第一过渡层13包括第一层131和第二层132时,该封装膜层10可包括依次层叠设置的氮化硅层、氮氧化硅层、高分子材料层、氧化硅层、氮氧化硅层、氮化硅层及氧化硅层;或者该封装膜层10可包括依次层叠设置的氮化硅层、氮氧化硅层、高分子材料层、氮氧化硅、氧化硅层、氮化硅及氧化硅层。In some embodiments, the third transition layer 16 may be formed of silicon oxide, and the second transition layer 15 may be formed of silicon oxynitride. When the first transition layer 13 is formed of silicon oxide, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxide layer stacked in sequence. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxide layer that are sequentially stacked. Floor. When the first transition layer 13 includes the first layer 131 and the second layer 132, the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, and an oxynitride layer that are stacked in sequence. A silicon layer, a silicon nitride layer, and a silicon oxide layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, silicon oxynitride, a silicon oxide layer, and a silicon nitride layer that are sequentially stacked. And silicon oxide layer.
在某些实施方式中,第三过渡层16可采用氧化硅形成,第二过渡层15可包括第一层151和第二层152,第二过渡层15的第一层151可采用氧化硅形成,第二过渡层15的第二层152可采用氮氧化硅形成。在第一过渡层13采用氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氮氧化硅层、氧化硅层、高分子材料层、氧化硅层、氮化硅层及氧化硅层。在第一过渡层13采用氮氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氮氧化硅层、氧化硅层、高分子材料层、氮氧化硅层、氮化硅层及氧化硅层。在第一过渡层13包括第一层131和第二层132时,该封装膜层10可包括依次层叠设置的氮化硅层、氮氧化硅层、氧化硅层、高分子材料层、氮氧化硅层、氧化硅层、氮化硅层及氧化硅层;或者该封装膜层10可包括依次层叠设置的氮化硅层、氮氧化硅层、氧化硅层、高分子材料层、氧化硅层、氮氧化硅层、氮化硅层及氧化硅层。当然,第二过渡层15的第一层151和第二过渡层15的第二层152的材料可调换。例如,第二过渡层15的第一层151可采用氮氧化硅形成,第二过渡层15的152第二层可采用氧化硅形成。在第一过渡层13采用氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氧化硅层、氮氧化硅层、高分子材料层、氧化硅层、氮化硅层及氧化硅层。在第一过渡层13采用氮氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氧化硅层、氮氧化硅层、高分子材料层、氮氧化硅层、氮化硅层及氧化硅层。在第一过渡层13包括第一层131和第二层132时,该封装膜层10可包括依次层叠设置的氮化硅层、氧化硅层、氮氧化硅层、高分子材料层、氮氧化硅层、氧化硅层、氮化硅层及氧化硅层;或者该封装膜层10可包括依次层叠设置的氮化硅层、氧化硅层、氮氧化硅层、高分子材料层、氧化硅层、氮氧化硅层、氮化硅层及氧化硅层。In some embodiments, the third transition layer 16 can be formed of silicon oxide, the second transition layer 15 can include a first layer 151 and a second layer 152, and the first layer 151 of the second transition layer 15 can be formed of silicon oxide. The second layer 152 of the second transition layer 15 may be formed of silicon oxynitride. When the first transition layer 13 is formed of silicon oxide, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and Silicon oxide layer. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer that are sequentially stacked. Layer and silicon oxide layer. When the first transition layer 13 includes the first layer 131 and the second layer 132, the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, and an oxynitride layer that are sequentially stacked. A silicon layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxide layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, and a silicon oxide layer stacked in sequence , Silicon oxynitride layer, silicon nitride layer and silicon oxide layer. Of course, the materials of the first layer 151 of the second transition layer 15 and the second layer 152 of the second transition layer 15 can be exchanged. For example, the first layer 151 of the second transition layer 15 may be formed of silicon oxynitride, and the second layer 152 of the second transition layer 15 may be formed of silicon oxide. When the first transition layer 13 is formed of silicon oxide, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer and Silicon oxide layer. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer that are sequentially stacked. Layer and silicon oxide layer. When the first transition layer 13 includes the first layer 131 and the second layer 132, the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, and an oxynitride layer that are sequentially stacked. A silicon layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxide layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, and a silicon oxide layer stacked in sequence , Silicon oxynitride layer, silicon nitride layer and silicon oxide layer.
在某些实施方式中,第三过渡层16可采用氮氧化硅形成,第二过渡层15可采用氧化硅形成。在第一过渡层13采用氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氧化硅层、高分子材料层、氧化硅层、氮化硅层及氮氧化硅层。在第一过渡层13采用氮氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氧化硅层、高分子材料层、氮氧化硅层、氮化硅层及氮氧化硅层。在第一过渡层13包括第一层131和第二层132时,该封装膜层10可包括依次层叠设置的氮化硅层、氧化硅层、高分子材料层、氮氧化硅层、氧化硅层、氮化硅层及氮氧化硅层;或者该封装膜层10可包括依次层叠设置的氮化硅层、氧化硅层、高分子材料层、氧化硅层、氮氧化硅层、氮化硅层及氮氧化硅层。In some embodiments, the third transition layer 16 may be formed of silicon oxynitride, and the second transition layer 15 may be formed of silicon oxide. When the first transition layer 13 is formed of silicon oxide, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer that are sequentially stacked. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxynitride layer that are sequentially stacked. Floor. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film layer 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon oxide layer stacked in sequence. Layer, silicon nitride layer, and silicon oxynitride layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer stacked in sequence. Layer and silicon oxynitride layer.
在某些实施方式中,第三过渡层16可采用氮氧化硅形成,第二过渡层15可采用氮氧化硅形成。在第一过渡层13采用氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氮氧化硅层、高分子材料层、氧化硅层、氮化硅层及氮氧化硅层。在第一过渡层13采用氮氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氮氧化硅层、高分子材料层、氮氧化硅层、氮化硅层及氮氧化硅层。在第一过渡层13包括第一层131和第二层132时,该封装膜层10可包括依次层叠设置的氮化硅层、氮氧化硅层、高分子材料层、氧化硅层、氮氧化硅层、氮化硅层及氮氧化硅层;或者该封装膜层10可 包括依次层叠设置的氮化硅层、氮氧化硅层、高分子材料层、氮氧化硅、氧化硅层、氮化硅及氮氧化硅层。In some embodiments, the third transition layer 16 may be formed of silicon oxynitride, and the second transition layer 15 may be formed of silicon oxynitride. When the first transition layer 13 is formed of silicon oxide, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer that are sequentially stacked. . When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and an oxynitride layer that are sequentially stacked. Silicon layer. When the first transition layer 13 includes the first layer 131 and the second layer 132, the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, and an oxynitride layer that are stacked in sequence. A silicon layer, a silicon nitride layer, and a silicon oxynitride layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, silicon oxynitride, a silicon oxide layer, and a nitride Silicon and silicon oxynitride layer.
在某些实施方式中,第三过渡层16可采用氮氧化硅形成,第二过渡层15可包括第一层151和第二层152,第二过渡层15的第一层151可采用氧化硅形成,第二过渡层15的第二层152可采用氮氧化硅形成。在第一过渡层13采用氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氮氧化硅层、氧化硅层、高分子材料层、氧化硅层、氮化硅层及氮氧化硅层。在第一过渡层13采用氮氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氮氧化硅层、氧化硅层、高分子材料层、氮氧化硅层、氮化硅层及氮氧化硅层。在第一过渡层13包括第一层131和第二层132时,该封装膜层10可包括依次层叠设置的氮化硅层、氮氧化硅层、氧化硅层、高分子材料层、氮氧化硅层、氧化硅层、氮化硅层及氮氧化硅层;或者该封装膜层10可包括依次层叠设置的氮化硅层、氮氧化硅层、氧化硅层、高分子材料层、氧化硅层、氮氧化硅层、氮化硅层及氮氧化硅层。当然,第二过渡层15的第一层151和第二过渡层15的第二层152的材料可调换。例如,第二过渡层15的第一层151可采用氮氧化硅形成,第二过渡层15的第二层152可采用氧化硅形成。在第一过渡层13采用氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氧化硅层、氮氧化硅层、高分子材料层、氧化硅层、氮化硅层及氮氧化硅层。在第一过渡层13采用氮氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氧化硅层、氮氧化硅层、高分子材料层、氮氧化硅层、氮化硅层及氮氧化硅层。在第一过渡层13包括第一层131和第二层132时,该封装膜层10可包括依次层叠设置的氮化硅层、氧化硅层、氮氧化硅层、高分子材料层、氮氧化硅层、氧化硅层、氮化硅层及氮氧化硅层;或者该封装膜层10可包括依次层叠设置的氮化硅层、氧化硅层、氮氧化硅层、高分子材料层、氧化硅层、氮氧化硅层、氮化硅层及氮氧化硅层。In some embodiments, the third transition layer 16 can be formed of silicon oxynitride, the second transition layer 15 can include a first layer 151 and a second layer 152, and the first layer 151 of the second transition layer 15 can be silicon oxide. Formed, the second layer 152 of the second transition layer 15 can be formed using silicon oxynitride. When the first transition layer 13 is formed of silicon oxide, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and Silicon oxynitride layer. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer that are sequentially stacked. Layer and silicon oxynitride layer. When the first transition layer 13 includes the first layer 131 and the second layer 132, the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, and an oxynitride layer that are sequentially stacked. A silicon layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, and a silicon oxide layer stacked in sequence. Layer, silicon oxynitride layer, silicon nitride layer and silicon oxynitride layer. Of course, the materials of the first layer 151 of the second transition layer 15 and the second layer 152 of the second transition layer 15 can be exchanged. For example, the first layer 151 of the second transition layer 15 may be formed of silicon oxynitride, and the second layer 152 of the second transition layer 15 may be formed of silicon oxide. When the first transition layer 13 is formed of silicon oxide, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer and Silicon oxynitride layer. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer that are sequentially stacked. Layer and silicon oxynitride layer. When the first transition layer 13 includes the first layer 131 and the second layer 132, the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, and an oxynitride layer that are sequentially stacked. A silicon layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, and a silicon oxide layer stacked in sequence. Layer, silicon oxynitride layer, silicon nitride layer and silicon oxynitride layer.
请参阅图7,在某些实施方式中,第三过渡层16可包括第一层161和第二层162,第三过渡层16的第一层161可采用氧化硅形成,第三过渡层16的第二层162可采用氮氧化硅形成,第二过渡层15可采用氧化硅形成。在第一过渡层13采用氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氧化硅层、高分子材料层、氧化硅层、氮化硅层、氮氧化硅层及氧化硅层。在第一过渡层13采用氮氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氧化硅层、高分子材料层、氮氧化硅层、氮化硅层、氮氧化硅层及氧化硅层。在第一过渡层13包括第一层131和第二层132时,该封装膜层10可包括依次层叠设置的氮化硅层、氧化硅层、高分子材料层、氮氧化硅层、氧化硅层、氮化硅层、氮氧化硅层及氧化硅层;或者该封装膜层10可包括依次层叠设置的氮化硅层、氧化硅层、高分子材料层、氧化硅层、氮氧化硅层、氮化硅层、氮氧化硅层及氧化硅层。Referring to FIG. 7, in some embodiments, the third transition layer 16 may include a first layer 161 and a second layer 162, the first layer 161 of the third transition layer 16 may be formed of silicon oxide, and the third transition layer 16 The second layer 162 may be formed of silicon oxynitride, and the second transition layer 15 may be formed of silicon oxide. When the first transition layer 13 is formed of silicon oxide, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, and Silicon oxide layer. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxynitride layer that are sequentially stacked. Layer and silicon oxide layer. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film layer 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon oxide layer stacked in sequence. Layer, silicon nitride layer, silicon oxynitride layer, and silicon oxide layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, and a silicon oxynitride layer stacked in sequence , Silicon nitride layer, silicon oxynitride layer and silicon oxide layer.
在某些实施方式中,第三过渡层16的第一层161可采用氧化硅形成,第三过渡层16的第二层162可采用氮氧化硅形成,第二过渡层15采用氮氧化硅形成。在第一过渡层13采用氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氮氧化硅层、高分子材料层、氧化硅层、氮化硅层、氮氧化硅层及氧化硅层。在第一过渡层13采用氮氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氮氧化硅层、高分子材料层、氮氧化硅层、氮化硅层、氮氧化硅层及氧化硅层。在第一过渡层13包括第一层131和第二层132时,该封装膜层10可包括依次层叠设置的氮化硅层、氮氧化硅层、高分子材料层、氮氧化硅层、氧化硅层、氮化硅层、氮氧化硅层及氧化硅层;或者该封装膜层10可包括依次层叠设置的氮化硅层、氮氧化硅层、高分子材料层、氧化硅层、氮氧化硅层、氮化硅层、氮氧化硅层及氧化硅层。In some embodiments, the first layer 161 of the third transition layer 16 may be formed of silicon oxide, the second layer 162 of the third transition layer 16 may be formed of silicon oxynitride, and the second transition layer 15 may be formed of silicon oxynitride. . When the first transition layer 13 is formed of silicon oxide, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer that are sequentially stacked. And silicon oxide layer. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and an oxynitride layer that are sequentially stacked. Silicon layer and silicon oxide layer. When the first transition layer 13 includes the first layer 131 and the second layer 132, the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, and an oxide layer that are sequentially stacked. A silicon layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, and an oxynitride layer stacked in sequence. Silicon layer, silicon nitride layer, silicon oxynitride layer and silicon oxide layer.
在某些实施方式中,第三过渡层16的第一层161可采用氧化硅形成,第三过渡层16的第二层162可采用氮氧化硅形成,第二过渡层15可包括第一层151和第二层152,第二过渡层15的第一层151可采用氧化硅形成,第二过渡层15的第二层152可采用氮氧化硅形成。在第一过渡层13采用氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氮氧化硅层、氧化硅层、高分子材料层、氧化硅层、氮化硅层、氮氧化硅层及氧化硅层。在第一过渡层13采用氮氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氮氧化硅层、氧化硅层、高分子材料层、氮氧化硅层、氮化硅层、氮氧化硅层及氧化硅层。在第一过渡层13包括第一层131和第二层132时,该封装膜层10可包括依次层叠设置的氮化硅层、氮氧化硅层、氧化硅层、高分子材料层、氮氧化硅层、氧化硅层、氮化硅层、氮氧化硅层及氧化硅层;或者该封装膜层10可包括依次层叠设置的氮化硅层、氮氧化硅层、氧化硅层、高分子材料层、氧化硅层、氮氧化硅层、氮化硅层、氮氧化硅层及氧化硅层。当然,第二过渡层15的第一层151和第二过渡层15的第二层152的材料可调换。例如,第二过渡层15的第一层152可采用氮氧化硅形成,第二过渡层15的第二层152可采用氧化硅形成。在第一过渡层13采用氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氧化硅层、氮氧化硅层、高分子材料层、氧化硅层、氮化硅层、氮氧化硅层及氧化硅层。在第一过渡层13采用氮氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氧化硅层、氮氧化硅层、高分子材料层、氮氧化硅层、氮化硅层、氮氧化硅层及氧化硅层。在第一过渡层13包括第一层131和第二层132时,该封装膜层10可包括依次层叠设置的氮化硅层、氧化硅层、氮氧化硅层、高分子材料层、氮氧化硅层、氧化硅层、氮化硅层、氮氧化硅层及氧化硅层;或者该封装膜层10可包括依次层叠设置的氮化硅层、氧化硅层、氮氧化硅层、高分子材料层、氧化硅层、氮氧化硅层、氮化硅层、氮氧化硅层及氧化硅层。In some embodiments, the first layer 161 of the third transition layer 16 can be formed of silicon oxide, the second layer 162 of the third transition layer 16 can be formed of silicon oxynitride, and the second transition layer 15 can include the first layer. 151 and the second layer 152, the first layer 151 of the second transition layer 15 may be formed of silicon oxide, and the second layer 152 of the second transition layer 15 may be formed of silicon oxynitride. When the first transition layer 13 is formed of silicon oxide, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, Silicon oxynitride layer and silicon oxide layer. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer that are sequentially stacked. Layer, silicon oxynitride layer and silicon oxide layer. When the first transition layer 13 includes the first layer 131 and the second layer 132, the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, and an oxynitride layer that are sequentially stacked. A silicon layer, a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, and a polymer material stacked in sequence Layer, silicon oxide layer, silicon oxynitride layer, silicon nitride layer, silicon oxynitride layer, and silicon oxide layer. Of course, the materials of the first layer 151 of the second transition layer 15 and the second layer 152 of the second transition layer 15 can be exchanged. For example, the first layer 152 of the second transition layer 15 may be formed of silicon oxynitride, and the second layer 152 of the second transition layer 15 may be formed of silicon oxide. When the first transition layer 13 is formed of silicon oxide, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, Silicon oxynitride layer and silicon oxide layer. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer that are sequentially stacked. Layer, silicon oxynitride layer and silicon oxide layer. When the first transition layer 13 includes the first layer 131 and the second layer 132, the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, and an oxynitride layer that are sequentially stacked. A silicon layer, a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, and a polymer material stacked in sequence Layer, silicon oxide layer, silicon oxynitride layer, silicon nitride layer, silicon oxynitride layer, and silicon oxide layer.
当然,第三过渡层16的第一层161和第二层162的材料可调换,在某些实施方式中,例如,第三过渡层16的第一层161可采用氮氧化硅形成,第三过渡层16的第二层162可采用氧化硅形成,第二过渡层15采用氧化硅形成。在第一过渡层13采用氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氧化硅层、高分子材料层、氧化硅层、氮化硅层、氧化硅层及氮氧化硅层。在第一过渡层13采用氮氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氧化硅层、高分子材料层、氮氧化硅层、氮化硅层、氧化硅层及氮氧化硅层。在第一过渡层13包括第一层131和第二层132时,该封装膜层10可包括依次层叠设置的氮化硅层、氧化硅层、高分子材料层、氮氧化硅层、氧化硅层、氮化硅层、氧化硅层及氮氧化硅层;或者该封装膜层10可包括依次层叠设置的氮化硅层、氧化硅层、高分子材料层、氧化硅层、氮氧化硅层、氮化硅层、氧化硅层及氮氧化硅层。Of course, the materials of the first layer 161 and the second layer 162 of the third transition layer 16 can be exchanged. In some embodiments, for example, the first layer 161 of the third transition layer 16 can be formed of silicon oxynitride, and the third The second layer 162 of the transition layer 16 may be formed of silicon oxide, and the second transition layer 15 may be formed of silicon oxide. When the first transition layer 13 is formed of silicon oxide, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, a silicon oxide layer, and a layer of nitrogen that are sequentially stacked. Silicon oxide layer. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxide layer that are sequentially stacked. And silicon oxynitride layer. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film layer 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon oxide layer stacked in sequence. Layer, silicon nitride layer, silicon oxide layer, and silicon oxynitride layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, and a silicon oxynitride layer stacked in sequence , Silicon nitride layer, silicon oxide layer and silicon oxynitride layer.
在某些实施方式中,第三过渡层16的第一层161可采用氮氧化硅形成,第三过渡层16的第二层162可采用氧化硅形成,第二过渡层15采用氮氧化硅形成。在第一过渡层13采用氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氮氧化硅层、高分子材料层、氧化硅层、氮化硅层、氧化硅层及氮氧化硅层。在第一过渡层13采用氮氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氮氧化硅层、高分子材料层、氮氧化硅层、氮化硅层、氧化硅层及氮氧化硅层。在第一过渡层13包括第一层131和第二层132时,该封装膜层10可包括依次层叠设置的氮化硅层、氮氧化硅层、高分子材料层、氮氧化硅层、氧化硅层、氮化硅层、氧化硅层及氮氧化硅层;或者该封装膜层10可包括依次层叠设置的氮化硅层、氮氧化硅层、高分子材料层、氧化硅层、氮氧化硅层、氮化硅层、氧化硅层及氮氧化硅层。In some embodiments, the first layer 161 of the third transition layer 16 may be formed of silicon oxynitride, the second layer 162 of the third transition layer 16 may be formed of silicon oxide, and the second transition layer 15 may be formed of silicon oxynitride. . When the first transition layer 13 is formed of silicon oxide, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, a silicon oxide layer, and Silicon oxynitride layer. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxide layer that are sequentially stacked. Layer and silicon oxynitride layer. When the first transition layer 13 includes the first layer 131 and the second layer 132, the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, and an oxide layer that are sequentially stacked. A silicon layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, and an oxynitride layer stacked in sequence. Silicon layer, silicon nitride layer, silicon oxide layer and silicon oxynitride layer.
在某些实施方式中,第三过渡层16的第一层161可采用氮氧化硅形成,第三过渡层16的第二层 162可采用氧化硅形成,第二过渡层15可包括第一层151和第二层152,第二过渡层15的第一层151可采用氧化硅形成,第二过渡层15的第二层152可采用氮氧化硅形成。在第一过渡层13采用氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氮氧化硅层、氧化硅层、高分子材料层、氧化硅层、氮化硅层、氧化硅层及氮氧化硅层。在第一过渡层13采用氮氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氮氧化硅层、氧化硅层、高分子材料层、氮氧化硅层、氮化硅层、氧化硅层及氮氧化硅层。在第一过渡层13包括第一层131和第二层132时,该封装膜层10可包括依次层叠设置的氮化硅层、氮氧化硅层、氧化硅层、高分子材料层、氮氧化硅层、氧化硅层、氮化硅层、氧化硅层及氮氧化硅层;或者该封装膜层10可包括依次层叠设置的氮化硅层、氮氧化硅层、氧化硅层、高分子材料层、氧化硅层、氮氧化硅层、氮化硅层、氧化硅层及氮氧化硅层。当然,第二过渡层15的第一层151和第二过渡层15的第二层152的材料可调换。例如,第二过渡层15的第一层151可采用氮氧化硅形成,第二过渡层15的第二层152可采用氧化硅形成。在第一过渡层13采用氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氧化硅层、氮氧化硅层、高分子材料层、氧化硅层、氮化硅层、氧化硅层及氮氧化硅层。在第一过渡层13采用氮氧化硅形成时,该封装膜层10包括依次层叠设置的氮化硅层、氧化硅层、氮氧化硅层、高分子材料层、氮氧化硅层、氮化硅层、氧化硅层及氮氧化硅层。在第一过渡层13包括第一层131和第二层132时,该封装膜层10可包括依次层叠设置的氮化硅层、氧化硅层、氮氧化硅层、高分子材料层、氮氧化硅层、氧化硅层、氮化硅层、氧化硅层及氮氧化硅层;或者该封装膜层10可包括依次层叠设置的氮化硅层、氧化硅层、氮氧化硅层、高分子材料层、氧化硅层、氮氧化硅层、氮化硅层、氧化硅层及氮氧化硅层。In some embodiments, the first layer 161 of the third transition layer 16 may be formed of silicon oxynitride, the second layer 162 of the third transition layer 16 may be formed of silicon oxide, and the second transition layer 15 may include the first layer. 151 and the second layer 152, the first layer 151 of the second transition layer 15 may be formed of silicon oxide, and the second layer 152 of the second transition layer 15 may be formed of silicon oxynitride. When the first transition layer 13 is formed of silicon oxide, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, Silicon oxide layer and silicon oxynitride layer. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer that are sequentially stacked. Layer, silicon oxide layer and silicon oxynitride layer. When the first transition layer 13 includes the first layer 131 and the second layer 132, the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, and an oxynitride layer that are sequentially stacked. A silicon layer, a silicon oxide layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, and a polymer material stacked in sequence Layer, silicon oxide layer, silicon oxynitride layer, silicon nitride layer, silicon oxide layer, and silicon oxynitride layer. Of course, the materials of the first layer 151 of the second transition layer 15 and the second layer 152 of the second transition layer 15 can be exchanged. For example, the first layer 151 of the second transition layer 15 may be formed of silicon oxynitride, and the second layer 152 of the second transition layer 15 may be formed of silicon oxide. When the first transition layer 13 is formed of silicon oxide, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, Silicon oxide layer and silicon oxynitride layer. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer that are sequentially stacked. Layer, silicon oxide layer and silicon oxynitride layer. When the first transition layer 13 includes the first layer 131 and the second layer 132, the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, and an oxynitride layer that are sequentially stacked. A silicon layer, a silicon oxide layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, and a polymer material stacked in sequence Layer, silicon oxide layer, silicon oxynitride layer, silicon nitride layer, silicon oxide layer, and silicon oxynitride layer.
在某些实施方式中,封装膜层10还可缺省第二过渡层15,即封装膜层10包括第三过渡层16和第一过渡层13,而不设置第二过渡层15。In some embodiments, the packaging film layer 10 may also default to the second transition layer 15, that is, the packaging film layer 10 includes the third transition layer 16 and the first transition layer 13, and the second transition layer 15 is not provided.
在某些实施方式中,第三过渡层16的厚度小于或等于第三预设厚度。第三预设厚度可与上述的第一预设厚度和/或第二预设厚度相同,在此不再赘述。当然,第三预设厚度也可与第一预设厚度或第二预设厚度不同,在此不再一一列举。In some embodiments, the thickness of the third transition layer 16 is less than or equal to the third predetermined thickness. The third predetermined thickness may be the same as the above-mentioned first predetermined thickness and/or the second predetermined thickness, which will not be repeated here. Of course, the third preset thickness may also be different from the first preset thickness or the second preset thickness, and will not be listed here.
由于第一过渡层13、第二过渡层15及第三过渡层16的厚度可分别小于或等于预设厚度,避免了第一过渡层13、第二过渡层15及第三过渡层16的厚度对该封装膜层10的厚度造成影响。Since the thickness of the first transition layer 13, the second transition layer 15 and the third transition layer 16 can be respectively less than or equal to the preset thickness, the thickness of the first transition layer 13, the second transition layer 15 and the third transition layer 16 is avoided This affects the thickness of the packaging film layer 10.
请参阅图8,本申请实施方式的显示屏100包括显示层20及上述任一实施方式的封装膜层10,显示层20设于缓冲层12的远离第一保护层11的一侧。例如,封装膜层10包括依次层叠设置的第二保护层14、第二过渡层15、缓冲层12、第一过渡层13、第一保护层11及第三过渡层16。此时,显示层20则设于第二保护层14远离第二过渡层15的一侧。将显示层20设于封装膜层10下方,通过封装膜层10对显示层20进行封装,保证了显示层20不受外界的水汽、氧气的干扰。Referring to FIG. 8, the display screen 100 of the embodiment of the present application includes a display layer 20 and the packaging film layer 10 of any of the above embodiments. The display layer 20 is provided on the side of the buffer layer 12 away from the first protective layer 11. For example, the packaging film layer 10 includes a second protective layer 14, a second transition layer 15, a buffer layer 12, a first transition layer 13, a first protective layer 11, and a third transition layer 16 stacked in sequence. At this time, the display layer 20 is disposed on the side of the second protection layer 14 away from the second transition layer 15. The display layer 20 is arranged under the encapsulation film layer 10, and the display layer 20 is encapsulated by the encapsulation film layer 10, which ensures that the display layer 20 is not interfered by external water vapor and oxygen.
具体地,第一保护层11和第二保护层14可采用氮化硅形成,氮化硅的致密分子结构能对显示层20进行更加致密的保护,以防止外界水汽、氧气对显示屏100造成损坏。Specifically, the first protective layer 11 and the second protective layer 14 can be formed of silicon nitride. The dense molecular structure of silicon nitride can protect the display layer 20 more densely to prevent external moisture and oxygen from causing damage to the display screen 100. damage.
在某些实施方式中,显示层20可包括依次层叠设置的基板24、阳极23、发光层22及阴极21。In some embodiments, the display layer 20 may include a substrate 24, an anode 23, a light-emitting layer 22, and a cathode 21 that are sequentially stacked.
具体地,阴极21和阳极23用于对发光层22通电以使发光层22发光并显示图像。在一个显示屏100中,可拥有成矩阵排序的多个阴极21、发光层22及阳极23,通过控制每个阴极21和阳极23通电,以使得相应的发光层22发光,以使得在显示屏100上显示图像。其中,发光层22可为有机材料形成,例如,该有机材料为有机EL(Organic Electro-Luminescence)。Specifically, the cathode 21 and the anode 23 are used to energize the light-emitting layer 22 to make the light-emitting layer 22 emit light and display an image. In a display screen 100, there may be a plurality of cathodes 21, light-emitting layers 22, and anodes 23 arranged in a matrix. By controlling each cathode 21 and anode 23 to be energized, the corresponding light-emitting layer 22 emits light, so that the display The image is displayed on 100. The light-emitting layer 22 may be formed of an organic material, for example, the organic material is Organic Electro-Luminescence.
基板24用于控制发光层22发光以显示图像。其中,基板24用于支撑显示层20及封装膜层10。 控制器(例如CPU)可以通过基板24传输电流和信号以控制发光层发光。基板24可以包括TFT基板。The substrate 24 is used to control the light emission of the light emitting layer 22 to display an image. Among them, the substrate 24 is used to support the display layer 20 and the packaging film layer 10. The controller (for example, CPU) can transmit current and signals through the substrate 24 to control the light-emitting layer to emit light. The substrate 24 may include a TFT substrate.
请参阅图9,在某些实施方式中,显示屏100还包括光取出层25,其中,光取出层25的材料可与发光层22的材料相同,例如,光取出层25的材料为有机EL。当然,光取出层25还可以为其他材料,例如,光取出层25的材料为电子阻挡层(electron-blocking layer,缩写为EBL)等等。光取出层25的设置在第二保护层14与阴极21之间。第二保护层14可对光取出层25进行保护,以防止水汽、氧气进入光取出层25内,对光取出层25造成损坏。发光层22发出的光可由光取出层25传导至封装膜层10,以避免发光层22中的光线在显示屏100内发生多次反射,从而增大发光层22中发出的光线在显示屏100内的透光效率。Referring to FIG. 9, in some embodiments, the display screen 100 further includes a light extraction layer 25, wherein the material of the light extraction layer 25 may be the same as the material of the light emitting layer 22, for example, the material of the light extraction layer 25 is organic EL . Of course, the light extraction layer 25 can also be made of other materials. For example, the material of the light extraction layer 25 is an electron-blocking layer (EBL) or the like. The light extraction layer 25 is provided between the second protective layer 14 and the cathode 21. The second protective layer 14 can protect the light extraction layer 25 to prevent water vapor and oxygen from entering the light extraction layer 25 and damage the light extraction layer 25. The light emitted by the light emitting layer 22 can be conducted by the light extraction layer 25 to the encapsulation film layer 10 to prevent the light in the light emitting layer 22 from being reflected multiple times in the display screen 100, thereby increasing the light emitted from the light emitting layer 22 on the display screen 100. Light transmission efficiency within.
请参阅图10,在某些实施方式中,基板24具有第四折射率,该显示屏100中还可包括增透膜26,该增透膜26设置在基板24远离阳极23的一侧。增透膜26的折射率是处于第四折射率与空气折射率之间。例如,基板24的第四折射率为1.5,而空气的折射率约为1,因此,经过封装膜层10的光线在经过基板24时会发生反射。因此,在增透膜26的折射率是处于(1,1.5)时,光线在穿过基板24进入空气,反射率减小。Referring to FIG. 10, in some embodiments, the substrate 24 has a fourth refractive index, and the display screen 100 may further include an anti-reflection film 26, and the anti-reflection film 26 is disposed on the side of the substrate 24 away from the anode 23. The refractive index of the antireflection film 26 is between the fourth refractive index and the air refractive index. For example, the fourth refractive index of the substrate 24 is 1.5, and the refractive index of air is approximately 1. Therefore, the light passing through the packaging film layer 10 will be reflected when passing through the substrate 24. Therefore, when the refractive index of the antireflection film 26 is at (1, 1.5), the light enters the air through the substrate 24, and the reflectivity decreases.
在某些实施方式中,显示屏100还可包括高分子膜材,该高分子膜材可设于封装膜层10远离显示层20的一侧。具体地,高分子膜材可设于第三过渡层16远离第一保护层11的一侧。该高分子膜材可为偏光片或者触屏膜等等,以实现显示屏100的触屏等功能。In some embodiments, the display screen 100 may further include a polymer film material, and the polymer film material may be provided on the side of the packaging film layer 10 away from the display layer 20. Specifically, the polymer membrane material may be provided on the side of the third transition layer 16 away from the first protective layer 11. The polymer film material may be a polarizer or a touch screen film, etc., to realize functions such as a touch screen of the display screen 100.
请继续参阅图9,在一个实施方式中,显示屏100包括第三过渡层16、第一保护层11、第一过渡层13、缓冲层12、第二过渡层15、第二保护层14、光取出层25、阴极21、发光层22、阳极23及基板24。对应的第三过渡层16、第一保护层11、第一过渡层13、缓冲层12、第二过渡层15及第二保护层14的材料、厚度及折射率的对应关系如表1所示。Please continue to refer to FIG. 9. In one embodiment, the display screen 100 includes a third transition layer 16, a first protection layer 11, a first transition layer 13, a buffer layer 12, a second transition layer 15, a second protection layer 14, The light extraction layer 25, the cathode 21, the light emitting layer 22, the anode 23, and the substrate 24. The corresponding third transition layer 16, the first protective layer 11, the first transition layer 13, the buffer layer 12, the second transition layer 15 and the second protective layer 14 are corresponding to the materials, thickness and refractive index of the corresponding relationship as shown in Table 1. .
表1Table 1
膜层名称Film name 材料material 厚度(nm)Thickness (nm) 折射率@550nmRefractive index@550nm
第三过渡层16The third transition layer 16 氧化硅Silicon oxide 9595 1.651.65
第一保护层11The first protective layer 11 氮化硅 Silicon nitride 10001000 1.851.85
第一过渡层13 First transition layer 13 氧化硅Silicon oxide 9595 1.651.65
缓冲层12 Buffer layer 12 高分子材料Polymer Materials 80008000 1.521.52
第二过渡层15The second transition layer 15 氧化硅Silicon oxide 9595 1.651.65
第二保护层14Second protective layer 14 氮化硅 Silicon nitride 10001000 1.851.85
由表1可知,第三过渡层16、第一过渡层13及第二过渡层15均采用氧化硅形成,第一保护层11及第二保护层14均采用氮化硅形成,缓冲层12采用高分子材料形成。则该显示屏100包括依次层叠设置的基板24、阳极23、发光层22、阴极21、光取出层25、氮化硅层、氧化硅层、高分子材料层、氧化硅层、氮化硅层及氧化硅层。对该显示屏100进行反射率检测,请参阅图11,图11为该显示屏100在仿真软件中的震荡图,由该震荡图可得到该显示屏100的平均反射率为6.07%。其中,平均反射率是指照射该显示屏100的所有光线(波长在380nm~780nm之间)中,有6.07%的光线会在显示屏100内发生反射。It can be seen from Table 1 that the third transition layer 16, the first transition layer 13, and the second transition layer 15 are all made of silicon oxide, the first protective layer 11 and the second protective layer 14 are all made of silicon nitride, and the buffer layer 12 is made of silicon oxide. The formation of polymer materials. The display screen 100 includes a substrate 24, an anode 23, a light-emitting layer 22, a cathode 21, a light extraction layer 25, a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, and a silicon nitride layer that are sequentially stacked. And silicon oxide layer. For the reflectance detection of the display screen 100, please refer to FIG. 11. FIG. 11 is an oscillation diagram of the display screen 100 in the simulation software. From the oscillation diagram, the average reflectance of the display screen 100 can be obtained as 6.07%. Among them, the average reflectivity refers to that 6.07% of all light (wavelengths between 380 nm and 780 nm) illuminating the display screen 100 will be reflected in the display screen 100.
请继续参阅图9,在另一个实施方式中,显示屏100包括第三过渡层16、第一保护层11、第一过渡层13、缓冲层12、第二过渡层15、第二保护层14、光取出层25、阴极21、发光层22、阳极23及基板24。对应的第三过渡层16、第一保护层11、第一过渡层13、缓冲层12、第二过渡层15及第二保 护层14的材料、厚度及折射率的对应关系请参阅表2。Please continue to refer to FIG. 9. In another embodiment, the display screen 100 includes a third transition layer 16, a first protection layer 11, a first transition layer 13, a buffer layer 12, a second transition layer 15, and a second protection layer 14. , The light extraction layer 25, the cathode 21, the light emitting layer 22, the anode 23 and the substrate 24. Please refer to Table 2 for the corresponding materials, thickness and refractive index of the third transition layer 16, the first protection layer 11, the first transition layer 13, the buffer layer 12, the second transition layer 15 and the second protection layer 14.
表2Table 2
膜层名称Film name 材料material 厚度(nm)Thickness (nm) 折射率@550nmRefractive index@550nm
第三过渡层16The third transition layer 16 氮氧化硅Silicon oxynitride 8080 1.751.75
第一保护层11The first protective layer 11 氮化硅 Silicon nitride 10001000 1.851.85
第一过渡层13 First transition layer 13 氮氧化硅Silicon oxynitride 8080 1.751.75
缓冲层12 Buffer layer 12 高分子材料Polymer Materials 80008000 1.521.52
第二过渡层15The second transition layer 15 氮氧化硅Silicon oxynitride 8080 1.751.75
第二保护层14Second protective layer 14 氮化硅 Silicon nitride 10001000 1.851.85
由表2可知,第三过渡层16、第一过渡层13及第二过渡层15均采用氮氧化硅形成,第一保护层11及第二保护层14均采用氮化硅形成,缓冲层12采用高分子材料形成。则该显示屏100包括依次层叠设置的基板24、阳极23、发光层22、阴极21、光取出层25、氮化硅层、氮氧化硅层、高分子材料层、氮氧化硅层、氮化硅层及氮氧化硅层。对该显示屏100进行反射率检测,请参阅图12,图12为该显示屏100在仿真软件中的震荡图,由该震荡图可得到该显示屏100的平均反射率为6.17%。It can be seen from Table 2 that the third transition layer 16, the first transition layer 13, and the second transition layer 15 are all formed of silicon oxynitride, the first protective layer 11 and the second protective layer 14 are all formed of silicon nitride, and the buffer layer 12 It is formed of polymer materials. The display screen 100 includes a substrate 24, an anode 23, a light-emitting layer 22, a cathode 21, a light extraction layer 25, a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, and a layer of Silicon layer and silicon oxynitride layer. For the reflectance detection of the display screen 100, please refer to FIG. 12. FIG. 12 is an oscillation graph of the display screen 100 in the simulation software. From the oscillation graph, the average reflectance of the display screen 100 can be obtained as 6.17%.
请继续参阅图9,在另一个实施方式中,显示屏100包括第三过渡层16、第一保护层11、第一过渡层13、缓冲层12、第二过渡层15、第二保护层14、光取出层25、阴极21、发光层22、阳极23及基板24。对应的第三过渡层16、第一保护层11、第一过渡层13、缓冲层12、第二过渡层15及第二保护层14的材料、厚度及折射率的对应关系请参阅表3。Please continue to refer to FIG. 9. In another embodiment, the display screen 100 includes a third transition layer 16, a first protection layer 11, a first transition layer 13, a buffer layer 12, a second transition layer 15, and a second protection layer 14. , The light extraction layer 25, the cathode 21, the light emitting layer 22, the anode 23 and the substrate 24. Please refer to Table 3 for the corresponding materials, thickness and refractive index of the third transition layer 16, the first protection layer 11, the first transition layer 13, the buffer layer 12, the second transition layer 15 and the second protection layer 14.
表3table 3
Figure PCTCN2021070344-appb-000001
Figure PCTCN2021070344-appb-000001
由表3可知,第三过渡层16、第一过渡层13及第二过渡层15均采用氧化硅和氮氧化硅形成,第一保护层11及第二保护层14均采用氮化硅形成,缓冲层12采用高分子材料形成。其中,由于氮氧化硅的折射率大于氧化硅的折射率,因此将氮氧化硅设于靠近氮化硅的一层,使得相邻两层膜层的折射率的差值更小。降低了显示屏100的平均反射率。该显示屏100包括依次层叠设置的基板24、阳极23、发光层22、阴极21、光取出层25、氮化硅层、氮氧化硅层、氧化硅层、高分子材料层、氧化硅层、氮氧化硅层、氮化硅层、氮氧化硅层及氧化硅。对该显示屏100进行反射率检测,请参阅图13,图13为该显示屏100中在仿真软件中的震荡图,由该震荡图可得到该显示屏100的平均反射率为5.56%。It can be seen from Table 3 that the third transition layer 16, the first transition layer 13, and the second transition layer 15 are all formed of silicon oxide and silicon oxynitride, and the first protective layer 11 and the second protective layer 14 are all formed of silicon nitride. The buffer layer 12 is formed of a polymer material. Among them, since the refractive index of silicon oxynitride is greater than that of silicon oxide, the silicon oxynitride is arranged in a layer close to silicon nitride, so that the difference in refractive index of two adjacent layers is smaller. The average reflectivity of the display screen 100 is reduced. The display screen 100 includes a substrate 24, an anode 23, a light emitting layer 22, a cathode 21, a light extraction layer 25, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, Silicon oxynitride layer, silicon nitride layer, silicon oxynitride layer and silicon oxide. For the reflectance detection of the display screen 100, please refer to FIG. 13. FIG. 13 is an oscillation graph of the display screen 100 in the simulation software. From the oscillation graph, the average reflectance of the display screen 100 can be obtained as 5.56%.
另外,在某些实施方式中,封装膜层10还可以用于封装指纹模组,如此可以防止外界的水汽、气体等进入指纹模组内对指纹模组造成损坏。In addition, in some embodiments, the encapsulating film layer 10 can also be used to encapsulate the fingerprint module, so as to prevent external water vapor, gas, etc. from entering the fingerprint module and causing damage to the fingerprint module.
请一并参阅图14和图15,本申请实施方式的电子设备1000包括摄像头200及上述任意一种显示屏100,显示屏100包括用于显示图像的显示区110,该显示区110形成有相背的正面111及背面112,显示屏100发出的光线沿背面112指向正面111的方向、并经过缓冲层12、第一过渡层13和第一保护层11后向外界发射,摄像头200设置在显示层20的背面112所在一侧。14 and 15 together, the electronic device 1000 of the embodiment of the present application includes a camera 200 and any one of the above-mentioned display screens 100. The display screen 100 includes a display area 110 for displaying images, and the display area 110 is formed with a phase The front side 111 and the back side 112 of the back, the light emitted by the display screen 100 is directed to the front side 111 along the back side 112, and is emitted to the outside after passing through the buffer layer 12, the first transition layer 13 and the first protective layer 11. The camera 200 is set on the display The back 112 of the layer 20 is located on the side.
具体地,摄像头200可为前置的屏下摄像头,外部光线穿过显示屏100被摄像头200接收。若显示屏100的反射率过大,则显示屏100中会发生更多的反射,经显示屏100反射后的光线最终可能会再被摄像头200接收,影响摄像头200的成像清晰度。因此,在显示屏100内增加第一过渡层13、第二过渡层15及第三过渡层16,以降低显示屏100的平均反射率,提升摄像头200的成像清晰度。当然,显示屏100中的显示层的光线在穿过封装薄膜时,反射率也更小,提高了电子设备100中显示屏100的显示效果。Specifically, the camera 200 may be a front-mounted under-screen camera, and external light passes through the display screen 100 and is received by the camera 200. If the reflectivity of the display screen 100 is too large, more reflections will occur in the display screen 100, and the light reflected by the display screen 100 may eventually be received by the camera 200, which affects the imaging clarity of the camera 200. Therefore, the first transition layer 13, the second transition layer 15 and the third transition layer 16 are added in the display screen 100 to reduce the average reflectivity of the display screen 100 and improve the imaging clarity of the camera 200. Of course, when the light from the display layer in the display screen 100 passes through the packaging film, the reflectivity is also smaller, which improves the display effect of the display screen 100 in the electronic device 100.
本申请实施方式的显示屏100和电子设备1000在第一保护层11和缓冲层12之间设置第一过渡层13,第一过渡层13的折射率处于第一保护层11的折射率和缓冲层12的折射率之间,使得光线能在折射率相差较小的第一保护层11和第一过渡层13、第一过渡层13和缓冲层12之间传播。相较于光线直接穿过第一保护层11和缓冲层12,光线依次穿过第一保护层11、第一过渡层13、及缓冲层12的反射率更小,减少了在第一保护层11与缓冲层12之间发生的反射,有利于光线更好地穿过封装膜层10,设置在屏下的摄像头能够接收到更多的光线,成像品质较佳。另一方面,显示屏100(图15所示)发出的光线在缓冲层12和第一过渡层13、第一过渡层13和第一保护层11之间传播时的反射率更小,使得用户看到的显示屏100图像更加清晰,提高了用户体验。In the display screen 100 and the electronic device 1000 of the embodiment of the present application, a first transition layer 13 is provided between the first protective layer 11 and the buffer layer 12. The refractive index of the first transition layer 13 is at the refractive index and the buffer of the first protective layer 11. The refractive index of the layer 12 is between the first protective layer 11 and the first transition layer 13, and the first transition layer 13 and the buffer layer 12, which have a small difference in refractive index. Compared with the light directly passing through the first protective layer 11 and the buffer layer 12, the reflectivity of the light passing through the first protective layer 11, the first transition layer 13, and the buffer layer 12 in turn is smaller, which reduces the amount of light on the first protective layer. The reflection between the buffer layer 11 and the buffer layer 12 is beneficial for light to pass through the packaging film layer 10 better, and the camera arranged under the screen can receive more light, and the imaging quality is better. On the other hand, the light emitted by the display screen 100 (shown in FIG. 15) has a smaller reflectivity when propagating between the buffer layer 12 and the first transition layer 13, the first transition layer 13 and the first protection layer 11, making the user The image of the display screen 100 seen is clearer, which improves the user experience.
在本说明书的描述中,参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本申请的至少一个实施例或示例中。在本说明书中,对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且,描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外,在不相互矛盾的情况下,本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。In the description of this specification, descriptions with reference to the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" etc. mean specific features described in conjunction with the embodiment or example , The structure, materials, or characteristics are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the described specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine the different embodiments or examples and the features of the different embodiments or examples described in this specification without contradicting each other.
此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本申请的描述中,“多个”的含义是至少两个,例如两个,三个等,除非另有明确具体的限定。In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present application, "a plurality of" means at least two, such as two, three, etc., unless specifically defined otherwise.
流程图中或在此以其他方式描述的任何过程或方法描述可以被理解为,表示包括一个或更多个用于实现特定逻辑功能或过程的步骤的可执行指令的代码的模块、片段或部分,并且本申请的优选实施方式的范围包括另外的实现,其中可以不按所示出或讨论的顺序,包括根据所涉及的功能按基本同时的方式或按相反的顺序,来执行功能,这应被本申请的实施例所属技术领域的技术人员所理解。Any process or method description described in the flowchart or described in other ways herein can be understood as a module, segment, or part of code that includes one or more executable instructions for implementing specific logical functions or steps of the process , And the scope of the preferred embodiments of the present application includes additional implementations, which may not be in the order shown or discussed, including performing functions in a substantially simultaneous manner or in the reverse order according to the functions involved. This should be It is understood by those skilled in the art to which the embodiments of the present application belong.
尽管上面已经示出和描述了本申请的实施例,可以理解的是,上述实施例是示例性的,不能理解为对本申请的限制,本领域的普通技术人员在本申请的范围内可以对上述实施例进行变化、修改、替换和变型。Although the embodiments of the present application have been shown and described above, it can be understood that the above-mentioned embodiments are exemplary and should not be construed as limitations to the present application. Those of ordinary skill in the art can comment on the foregoing within the scope of the present application. The embodiment undergoes changes, modifications, substitutions, and modifications.

Claims (24)

  1. 一种封装膜层,其特征在于,包括:An encapsulation film layer, characterized in that it comprises:
    第一保护层,所述第一保护层具有第一折射率;A first protective layer, the first protective layer having a first refractive index;
    缓冲层,所述缓冲层具有第二折射率,其中,所述第一折射率与所述第二折射率的差值大于预设折射率,所述缓冲层用于在所述封装膜层弯折时减小所述封装膜层承受的应力;及A buffer layer, the buffer layer has a second refractive index, wherein the difference between the first refractive index and the second refractive index is greater than a preset refractive index, and the buffer layer is used for bending the encapsulation film layer Reduce the stress borne by the packaging film layer during folding; and
    第一过渡层,所述第一过渡层设置在所述第一保护层与所述缓冲层之间,所述第一过渡层的折射率处于所述第一折射率与所述第二折射率之间。The first transition layer, the first transition layer is disposed between the first protective layer and the buffer layer, and the refractive index of the first transition layer is between the first refractive index and the second refractive index between.
  2. 根据权利要求1所述的封装膜层,其特征在于,所述第一保护层采用氮化硅形成,所述缓冲层采用高分子材料形成。The packaging film layer of claim 1, wherein the first protective layer is formed of silicon nitride, and the buffer layer is formed of a polymer material.
  3. 根据权利要求2所述的封装膜层,其特征在于,所述第一过渡层采用氧化硅或氮氧化硅形成。The packaging film layer of claim 2, wherein the first transition layer is formed of silicon oxide or silicon oxynitride.
  4. 根据权利要求1所述的封装膜层,其特征在于,所述第一过渡层包括第一层和第二层,所述缓冲层、所述第二层、所述第一层及所述第一保护层依次层叠设置。The packaging film layer of claim 1, wherein the first transition layer comprises a first layer and a second layer, and the buffer layer, the second layer, the first layer and the first layer A protective layer is stacked one after another.
  5. 根据权利要求4所述的封装膜层,其特征在于,所述第一层的折射率处于所述第一折射率与所述第二层的折射率之间,所述第二层的折射率处于所述第一层的折射率与所述第二折射率之间。The packaging film layer of claim 4, wherein the refractive index of the first layer is between the first refractive index and the refractive index of the second layer, and the refractive index of the second layer Between the refractive index of the first layer and the second refractive index.
  6. 根据权利要求5所述的封装膜层,其特征在于,所述第一保护层采用氮化硅形成,所述第一层采用氮氧化硅形成,所述第二层采用氧化硅形成,所述缓冲层采用高分子材料形成。The packaging film layer of claim 5, wherein the first protective layer is formed of silicon nitride, the first layer is formed of silicon oxynitride, and the second layer is formed of silicon oxide. The buffer layer is formed of a polymer material.
  7. 根据权利要求1至6中任意一项所述的封装膜层,其特征在于,所述封装膜层还包括:The packaging film layer according to any one of claims 1 to 6, wherein the packaging film layer further comprises:
    第二保护层,所述缓冲层设置在所述第一保护层和所述第二保护层之间。The second protective layer, the buffer layer is arranged between the first protective layer and the second protective layer.
  8. 根据权利要求7所述的封装膜层,其特征在于,所述第二保护层具有第三折射率,所述第三折射率与所述第二折射率的差值大于所述预设折射率,所述封装膜层还包括:8. The packaging film layer of claim 7, wherein the second protective layer has a third refractive index, and the difference between the third refractive index and the second refractive index is greater than the preset refractive index , The packaging film layer further includes:
    第二过渡层,所述第二过渡层设置在所述缓冲层与所述第二保护层之间,所述第二过渡层的折射率处于所述第三折射率与所述第二折射率之间,所述第二过渡层采用氧化硅或氮氧化硅形成。The second transition layer, the second transition layer is disposed between the buffer layer and the second protective layer, and the refractive index of the second transition layer is between the third refractive index and the second refractive index In between, the second transition layer is formed of silicon oxide or silicon oxynitride.
  9. 根据权利要求8所述的封装膜层,其特征在于,所述封装膜层还包括:8. The packaging film layer of claim 8, wherein the packaging film layer further comprises:
    第三过渡层,所述第三过渡层设置在所述第一保护层的远离所述缓冲层的一侧,所述第三过渡层的折射率处于所述第一折射率与空气的折射率之间,所述第二过渡层采用氧化硅或氮氧化硅形成。The third transition layer, the third transition layer is arranged on the side of the first protective layer away from the buffer layer, and the refractive index of the third transition layer is between the first refractive index and the refractive index of air In between, the second transition layer is formed of silicon oxide or silicon oxynitride.
  10. 根据权利要求9所述的封装膜层,其特征在于,所述第一过渡层的厚度小于第一预设厚度;和/或The packaging film layer of claim 9, wherein the thickness of the first transition layer is less than a first preset thickness; and/or
    所述第二过渡层的厚度小于第二预设厚度;和/或The thickness of the second transition layer is less than the second preset thickness; and/or
    所述第三过渡层的厚度小于第三预设厚度。The thickness of the third transition layer is less than the third preset thickness.
  11. 一种显示屏,其特征在于,包括:A display screen, characterized in that it comprises:
    显示层,所述显示层用于显示图像;A display layer, where the display layer is used to display images;
    封装膜层,所述封装膜层包括:第一保护层,所述第一保护层具有第一折射率;缓冲层,所述缓冲层具有第二折射率,其中,所述第一折射率与所述第二折射率的差值大于预设折射率,所述缓冲层用于在所述封装膜层弯折时减小所述封装膜层承受的应力;及第一过渡层,所述第一过渡层设置在所述第一保护层与所述缓冲层之间,所述第一过渡层的折射率处于所述第一折射率与所述第二折射率之间。An encapsulation film layer, the encapsulation film layer includes: a first protective layer, the first protective layer has a first refractive index; a buffer layer, the buffer layer has a second refractive index, wherein the first refractive index and The difference of the second refractive index is greater than the preset refractive index, the buffer layer is used to reduce the stress borne by the packaging film layer when the packaging film layer is bent; and the first transition layer, the first transition layer A transition layer is arranged between the first protective layer and the buffer layer, and the refractive index of the first transition layer is between the first refractive index and the second refractive index.
    所述显示层设于所述缓冲层的远离所述第一保护层的一侧。The display layer is arranged on a side of the buffer layer away from the first protective layer.
  12. 根据权利要求11所述的显示屏,其特征在于,所述第一保护层采用氮化硅形成,所述缓冲层采用高分子材料形成。11. The display screen of claim 11, wherein the first protective layer is formed of silicon nitride, and the buffer layer is formed of a polymer material.
  13. 根据权利要求12所述的显示屏,其特征在于,所述第一过渡层采用氧化硅或氮氧化硅形成。The display screen of claim 12, wherein the first transition layer is formed of silicon oxide or silicon oxynitride.
  14. 根据权利要求11所述的显示屏,其特征在于,所述第一过渡层包括第一层和第二层,所述缓冲层、所述第二层、所述第一层及所述第一保护层依次层叠设置。The display screen of claim 11, wherein the first transition layer includes a first layer and a second layer, and the buffer layer, the second layer, the first layer, and the first layer The protective layers are stacked in sequence.
  15. 根据权利要求14所述的显示屏,其特征在于,所述第一层的折射率处于所述第一折射率与所述第二层的折射率之间,所述第二层的折射率处于所述第一层的折射率与所述第二折射率之间。The display screen of claim 14, wherein the refractive index of the first layer is between the first refractive index and the refractive index of the second layer, and the refractive index of the second layer is between Between the refractive index of the first layer and the second refractive index.
  16. 根据权利要求15所述的显示屏,其特征在于,所述第一保护层采用氮化硅形成,所述第一层采用氮氧化硅形成,所述第二层采用氧化硅形成,所述缓冲层采用高分子材料形成。The display screen of claim 15, wherein the first protective layer is formed of silicon nitride, the first layer is formed of silicon oxynitride, the second layer is formed of silicon oxide, and the buffer The layer is formed of a polymer material.
  17. 根据权利要求11至16中任意一项所述的显示屏,其特征在于,所述封装膜层还包括第二保护层,所述缓冲层设置在所述第一保护层和所述第二保护层之间。The display screen according to any one of claims 11 to 16, wherein the packaging film layer further comprises a second protective layer, and the buffer layer is disposed on the first protective layer and the second protective layer. Between layers.
  18. 根据权利要求17所述的显示屏,其特征在于,所述第二保护层具有第三折射率,所述第三折射率与所述第二折射率的差值大于所述预设折射率,所述封装膜层还包括第二过渡层,所述第二过渡层设置在所述缓冲层与所述第二保护层之间,所述第二过渡层的折射率处于所述第三折射率与所述第二折射率之间,所述第二过渡层采用氧化硅或氮氧化硅形成。18. The display screen of claim 17, wherein the second protective layer has a third refractive index, and the difference between the third refractive index and the second refractive index is greater than the preset refractive index, The encapsulation film layer further includes a second transition layer disposed between the buffer layer and the second protective layer, and the refractive index of the second transition layer is at the third refractive index Between the second refractive index and the second refractive index, the second transition layer is formed of silicon oxide or silicon oxynitride.
  19. 根据权利要求18所述的显示屏,其特征在于,所述封装膜层还包括第三过渡层,所述第三过渡层设置在所述第一保护层的远离所述缓冲层的一侧,所述第三过渡层的折射率处于所述第一折射率与空气的折射率之间,所述第二过渡层采用氧化硅或氮氧化硅形成。18. The display screen of claim 18, wherein the packaging film layer further comprises a third transition layer, and the third transition layer is disposed on a side of the first protective layer away from the buffer layer, The refractive index of the third transition layer is between the first refractive index and the refractive index of air, and the second transition layer is formed of silicon oxide or silicon oxynitride.
  20. 根据权利要求19所述的显示屏,其特征在于,The display screen of claim 19, wherein:
    所述第一过渡层的厚度小于第一预设厚度;和/或The thickness of the first transition layer is less than the first preset thickness; and/or
    所述第二过渡层的厚度小于第二预设厚度;和/或The thickness of the second transition layer is less than the second preset thickness; and/or
    所述第三过渡层的厚度小于第三预设厚度。The thickness of the third transition layer is less than the third preset thickness.
  21. 根据权利要求11所述的显示屏,其特征在于,所述显示层包括依次层叠设置的基板、阳极、发光层及阴极,其中,所述阴极和所述阳极用于对所述发光层通电以使所述发光层发光并显示图像;所述基板用于控制所述发光层发光以显示图像。The display screen of claim 11, wherein the display layer comprises a substrate, an anode, a light-emitting layer, and a cathode stacked in sequence, wherein the cathode and the anode are used to energize the light-emitting layer to The light-emitting layer is made to emit light and displays an image; the substrate is used to control the light-emitting layer to emit light to display an image.
  22. 根据权利要求21所述的显示屏,其特征在于,所述显示屏还包括:The display screen of claim 21, wherein the display screen further comprises:
    光取出层,所述光取出层设置在所述第二保护层与所述阴极之间,所述光取出层用于将所述发光层的光传导至所述封装膜层。A light extraction layer, the light extraction layer is disposed between the second protective layer and the cathode, and the light extraction layer is used to conduct light from the light emitting layer to the encapsulation film layer.
  23. 根据权利要求21所述的显示屏,其特征在于,所述基板具有第四折射率,所述显示屏还包括:The display screen of claim 21, wherein the substrate has a fourth refractive index, and the display screen further comprises:
    增透膜,所述增透膜设置在所述基板远离所述阳极的一侧,所述增透膜的折射率处于所述第四折射率与空气的折射率之间。An anti-reflection coating, the anti-reflection coating is arranged on the side of the substrate away from the anode, and the refractive index of the anti-reflection coating is between the fourth refractive index and the refractive index of air.
  24. 一种电子设备,其特征在于,包括:An electronic device, characterized in that it comprises:
    摄像头;及Camera; and
    权利要求11至23任意一项所述的显示屏,所述显示屏包括用于显示图像的显示区,所述显示区形成有相背的正面及背面,所述显示屏发出的光线沿所述背面指向所述正面的方向、并经过所述缓冲层、所述第一过渡层和所述第一保护层后向外界发射,所述摄像头设置在所述显示层的所述背面所在一侧。The display screen according to any one of claims 11 to 23, the display screen comprising a display area for displaying images, the display area is formed with opposite front and back sides, and the light emitted by the display is along the The back surface points in the direction of the front surface and emits to the outside after passing through the buffer layer, the first transition layer and the first protective layer, and the camera is arranged on the side of the display layer where the back surface is located.
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Publication number Priority date Publication date Assignee Title
CN111224016A (en) * 2020-01-16 2020-06-02 Oppo广东移动通信有限公司 Packaging film layer, display screen and electronic equipment
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107591493A (en) * 2016-07-06 2018-01-16 三星显示有限公司 Organic LED display device
CN108899438A (en) * 2018-06-21 2018-11-27 武汉华星光电半导体显示技术有限公司 Display panel and preparation method thereof
CN109427992A (en) * 2017-08-28 2019-03-05 昆山国显光电有限公司 Thin-film packing structure and display device with it
CN111224016A (en) * 2020-01-16 2020-06-02 Oppo广东移动通信有限公司 Packaging film layer, display screen and electronic equipment

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050052130A1 (en) * 2003-09-09 2005-03-10 Toppoly Optoelectronics Corp. Light emitting device with optical enhancement structure
KR20150052490A (en) * 2013-11-06 2015-05-14 삼성디스플레이 주식회사 Organic light emitting diode device and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107591493A (en) * 2016-07-06 2018-01-16 三星显示有限公司 Organic LED display device
CN109427992A (en) * 2017-08-28 2019-03-05 昆山国显光电有限公司 Thin-film packing structure and display device with it
CN108899438A (en) * 2018-06-21 2018-11-27 武汉华星光电半导体显示技术有限公司 Display panel and preparation method thereof
CN111224016A (en) * 2020-01-16 2020-06-02 Oppo广东移动通信有限公司 Packaging film layer, display screen and electronic equipment

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