CN111224016A

CN111224016A - Encapsulation film, display and electronic equipment

Info

Publication number: CN111224016A
Application number: CN202010046705.2A
Authority: CN
Inventors: 贾玉虎
Original assignee: Guangdong Oppo Mobile Telecommunications Corp Ltd
Current assignee: Guangdong Oppo Mobile Telecommunications Corp Ltd
Priority date: 2020-01-16
Filing date: 2020-01-16
Publication date: 2020-06-02
Also published as: WO2021143583A1

Abstract

The embodiment of the application discloses a packaging film layer, a display screen and electronic equipment. The packaging film layer comprises a first protective layer, a buffer layer and a first transition layer. The first protective layer has a first refractive index, and the buffer layer has a second refractive index, wherein a difference value between the first refractive index and the second refractive index is greater than a preset refractive index. The buffer layer is used for reducing the stress borne by the packaging film layer when the packaging film layer is bent; the first transition layer is arranged between the first protection layer and the buffer layer, and the refractive index of the first transition layer is between the first refractive index and the second refractive index. In the encapsulation rete, display screen and electronic equipment of this application, set up first transition layer between first protective layer and buffer layer, the refracting index of first transition layer is in between the refracting index of first protective layer and buffer layer, and the reflectivity that light passed first protective layer, first transition layer in proper order and buffer layer is less, has reduced the reflection that light takes place between first protective layer and buffer layer, is favorable to light to pass the encapsulation rete.

Description

Packaging film layer, display screen and electronic equipment

Technical Field

The present disclosure relates to packaging technologies, and particularly to a packaging film, a display screen and an electronic device.

Background

To achieve protection of components, such as a display screen, the display screen may be encapsulated with an encapsulation film layer. However, the reflectivity of the packaging film layer is large, so that a serious reflection phenomenon can occur when light passes through the packaging film layer, and therefore the light cannot pass through the display screen easily, and the imaging effect of the camera under the display screen is poor. Moreover, light emitted by the display screen below the packaging film layer can be seriously reflected when passing through the packaging film layer, and the display screen image seen by a user is a distorted image due to the fact that part of light of the display screen is reflected, so that user experience is reduced.

Disclosure of Invention

The embodiment of the application provides an encapsulation rete, display screen and electronic equipment.

The encapsulation film layer of the embodiment of the present application includes: the first protective layer, the buffer layer and the first transition layer. The first protective layer has a first refractive index, and the buffer layer has a second refractive index, wherein a difference value between the first refractive index and the second refractive index is greater than a preset refractive index. The buffer layer is used for reducing the stress borne by the packaging film layer when the packaging film layer is bent. The first transition layer is arranged between the first protection layer and the buffer layer, and the refractive index of the first transition layer is between the first refractive index and the second refractive index.

The display screen of the embodiment of the application comprises a display layer and an encapsulation film layer. The display layer is used for displaying images; the display layer is arranged on one side of the buffer layer, which is far away from the first protective layer. The encapsulation film layer includes: the first protective layer, the buffer layer and the first transition layer. The first protective layer has a first refractive index, and the buffer layer has a second refractive index, wherein a difference value between the first refractive index and the second refractive index is greater than a preset refractive index. The buffer layer is used for reducing the stress borne by the packaging film layer when the packaging film layer is bent. The first transition layer is arranged between the first protection layer and the buffer layer, and the refractive index of the first transition layer is between the first refractive index and the second refractive index.

The electronic equipment of this application embodiment includes camera and display screen, the display screen includes display layer and encapsulation rete. The display layer is used for displaying images; the display layer is arranged on one side of the buffer layer, which is far away from the first protective layer. The encapsulation film layer includes: the first protective layer, the buffer layer and the first transition layer. The first protective layer has a first refractive index, and the buffer layer has a second refractive index, wherein a difference value between the first refractive index and the second refractive index is greater than a preset refractive index. The buffer layer is used for reducing the stress borne by the packaging film layer when the packaging film layer is bent. The first transition layer is arranged between the first protection layer and the buffer layer, and the refractive index of the first transition layer is between the first refractive index and the second refractive index. The display layer is including being used for showing the display area of image, the display area is formed with the front and the back of the body mutually, the light that the display screen sent is followed the back points to the direction of front, and pass through the buffer layer first transition layer with the transmission of first protective layer back to the external world, the camera sets up the display layer back place one side.

In the encapsulation rete, display screen and the electronic equipment of this application embodiment, set up first transition layer between first protective layer and buffer layer, the refracting index of first transition layer is in between the refracting index of first protective layer and buffer layer for light can propagate between less first protective layer and first transition layer and the less first transition layer and buffer layer of refracting index at the refracting index difference. On the one hand, compare in that light directly passes first protective layer and buffer layer, the reflectivity that light passed first protective layer, first transition layer and buffer layer in proper order is littleer, owing to reduced the reflection that takes place between first protective layer and buffer layer, is favorable to light to pass the encapsulation rete better, has improved and has located the camera under the encapsulation rete and can receive more light, and the formation of image quality is preferred. On the other hand, the reflectivity of the light ray sent by the display screen when the light ray is transmitted between the buffer layer and the first transition layer, between the first transition layer and the first protective layer is smaller, so that the image of the display screen seen by a user is clearer, and the user experience is improved.

Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.

Drawings

The foregoing and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

fig. 1 to 7 are schematic structural views of the encapsulation film according to some embodiments of the present disclosure.

Fig. 8-10 are schematic structural views of display screens according to some embodiments of the present application.

Fig. 11-13 are graphs illustrating the reflectivity of the display screen for different wavelengths of light according to some embodiments of the present disclosure.

FIG. 14 is a schematic diagram of an electronic device according to some embodiments of the present application.

FIG. 15 is a schematic cross-sectional view of FIG. 14 taken along section line XV-XV.

Detailed Description

Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary and intended to be used for explaining the present application and should not be construed as limiting the present application.

Referring to fig. 1, an encapsulation film 10 according to an embodiment of the present disclosure includes a first protection layer 11, a buffer layer 12, and a first transition layer 13. The first protective layer 11 has a first refractive index, the buffer layer 12 has a second refractive index, and a difference between the first refractive index and the second refractive index is greater than or equal to a predetermined refractive index. The buffer layer 12 is used to reduce the stress borne by the encapsulation film 10 when the encapsulation film 10 is bent. The first transition layer 13 is disposed between the first protective layer 11 and the buffer layer 12, and the refractive index of the first transition layer 13 is between the first refractive index and the second refractive index.

It should be noted that the first protection layer 11, the buffer layer 12 and the first transition layer 13 are all made of transparent materials, so that light can propagate among the first protection layer 11, the buffer layer 12 and the first transition layer 13. When light enters from one medium to another medium, the light is refracted and reflected correspondingly due to the different refractive indexes of the two media. When light is reflected between a plurality of media, the reflectivity of the light is determined according to the difference of refractive indexes between the two media, and the reflectivity refers to the ratio of the reflected light in one unit of light to the light in the whole unit. For example, when a light beam propagates between the first protective layer 11 and the buffer layer 12, the reflectivity of the encapsulating film 10 is 7.28%, that is, 7.28% of the light beam is reflected in the first protective layer 11 or the buffer layer 12. The greater the difference in refractive index between the two media, the greater the corresponding reflectivity, indicating a greater proportion of light reflected between the two media. Therefore, when the difference between the first refractive index of the first protection layer 11 and the second refractive index of the buffer layer 12 is greater than or equal to the predetermined refractive index, the first transition layer 13 is disposed between the first protection layer 11 and the buffer layer 12, and the refractive index of the first transition layer 13 is between the first refractive index and the second refractive index, so as to reduce the reflectivity of light passing through the first protection layer 11 and the buffer layer 12.

The predetermined refractive index may be a predetermined known value, and the predetermined refractive index may be (0, 1.00), for example, the predetermined refractive index may be 0.01, 0.02, 0.05, 0.1, 0.11, 0.12, 0.20, 0.30, 0.31, 0.32, 0.33, 0.35, 0.38, 0.40, 0.50, 1.00, etc. taking the predetermined refractive index as 0.20 as an example, when the difference between the first refractive index and the second refractive index is 0.3, it is stated that the difference between the refractive indexes of the first protective layer 11 and the buffer layer 12 is large, and the reflectivity in the encapsulating film 10 is large, so the first transition layer 13 may be disposed in the encapsulating film 10 to reduce the reflectivity in the encapsulating film 10.

The encapsulation film layer 10 of the embodiment of the present application is provided with the first transition layer 13 between the first protective layer 11 and the buffer layer 12, and the refractive index of the first transition layer 13 is between the refractive index of the first protective layer 11 and the refractive index of the buffer layer 12, so that light can propagate between the first protective layer 11 and the first transition layer 13 with a small difference in refractive index and between the first transition layer 13 and the buffer layer 12 with a small difference in refractive index. On the one hand, compare in that light directly passes first protective layer 11 and buffer layer 12, light passes first protective layer 11, first transition layer 13 in proper order and buffer layer 12's reflectivity is littleer, owing to reduced the reflection that takes place between first protective layer 11 and buffer layer 12, is favorable to light to pass encapsulation rete 10 better, and the camera that sets up under the screen can receive more light, and the formation of image quality is preferred. On the other hand, the reflectivity of the light emitted by the display screen 100 (shown in fig. 15) when the light propagates between the buffer layer 12 and the first transition layer 13, and between the first transition layer 13 and the first protective layer 11 is smaller, so that the image of the display screen 100 seen by the user is clearer, and the user experience is improved.

In some embodiments, the first protection layer 11 may be formed of silicon nitride, which has a compact structure and can effectively prevent external moisture, oxygen, etc. from entering the encapsulation film 10, so as to prevent damage to the components (e.g., the fingerprint module or the display layer 20 shown in fig. 8) protected by the encapsulation film 10. The buffer layer 12 is formed using a polymer material, which may include a fluorine-containing resin. The fluorine-containing resin can be polytetrafluoroethylene, and the material has excellent dielectric property and high flexibility. The buffer layer 12 effectively increases the flexibility of the encapsulation film 10, reduces the pressure borne by the encapsulation film 10 during bending, and prevents the encapsulation film 10 from cracking.

The thickness of the first protective layer 11 may be 1000nm, that is, the thickness of the silicon nitride layer may be 1000nm, and at this time, the refractive index of the silicon nitride to visible light with a wavelength of 550nm is 1.85, that is, the first refractive index is 1.85. The thickness of the buffer layer 12 may be 8000nm, that is, the thickness of the polymer material layer may be 8000nm, and at this time, the refractive index of the polymer material for visible light with a wavelength of 550nm is 1.52, that is, the second refractive index is 1.52. The difference between the first refractive index and the second refractive index was 0.33.

In some embodiments, the first transition layer 13 may be made of any material having a refractive index between the second refractive index and the first refractive index. For example, the first transition layer 13 may be made of any material having a refractive index between (1.52, 1.85). It should be noted that the material needs to be a light-permeable material. The first transition layer 13 may be formed using silicon oxide, and the refractive index of silicon oxide with respect to visible light having a wavelength of 550nm is 1.65. In this case, the encapsulation film layer 10 may include a polymer material layer, a silicon oxide layer, and a silicon nitride layer, which are sequentially stacked, and the difference between the refractive indexes of the silicon nitride layer and the silicon oxide layer is 1.85-1.65 — 0.20. The refractive index difference between the silicon nitride layer and the silicon oxide layer is smaller than the refractive index difference between the silicon nitride layer and the polymer material layer of 0.33. That is, the reflectivity of light between the silicon nitride layer and the silicon oxide layer is smaller than the reflectivity of light between the silicon nitride layer and the polymer material layer. In other words, light is less likely to be reflected between the silicon nitride layer and the silicon oxide layer. Similarly, the difference between the refractive indexes of the silicon oxide layer and the polymer material layer is 1.65-1.52-0.13, i.e. the reflectivity of light between the silicon oxide layer and the polymer material layer is smaller. That is, the encapsulation film 10 reduces the reflectivity of light in the encapsulation film 10 by adding a layer of silicon oxide between the silicon nitride layer and the polymer material layer.

The first transition layer 13 may also be formed using silicon oxynitride having a refractive index of 1.75 for visible light having a wavelength of 550 nm. In this case, the encapsulation film layer 10 may include a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer, which are sequentially stacked, and the difference between the refractive indexes of the silicon nitride layer and the silicon oxynitride layer is 1.85-1.75-0.10, which is smaller than the difference between the refractive indexes of the silicon nitride layer and the polymer material layer, which is 0.33. Similarly, the difference between the refractive indexes of the silicon oxynitride layer and the polymer material layer is 1.75-1.52-0.23, i.e. the reflectivity of light between the silicon oxynitride layer and the polymer material layer is smaller. That is, the encapsulation film 10 reduces the reflectivity of light in the encapsulation film 10 by adding a layer of silicon oxynitride between the silicon nitride layer and the polymer material layer.

The first transition layer 13 may also be made of aluminum oxide or tungsten trioxide, wherein the refractive index of aluminum oxide for visible light with a wavelength of 550nm is 1.63, and the refractive index of tungsten trioxide for visible light with a wavelength of 550nm is 1.70. When the encapsulation film 10 includes a polymer material layer, an aluminum oxide layer, and a silicon nitride layer stacked in sequence, the difference between the refractive indexes of the silicon nitride layer and the aluminum oxide layer is 1.85-1.63-0.22, and the difference between the refractive indexes of the polymer material layer and the aluminum oxide layer is 1.63-1.52-0.11, which is smaller than the difference between the refractive indexes of the silicon nitride layer and the polymer material layer, and is also smaller than the difference between the refractive indexes of the polymer material layer and the aluminum oxide layer, which is 0.33. That is, the encapsulation film 10 reduces the reflectivity of light in the encapsulation film 10 by adding a layer of aluminum oxide between the silicon nitride layer and the polymer material layer.

When the encapsulating film layer 10 includes the polymer material layer, the tungsten trioxide layer, and the silicon nitride layer stacked in this order, the difference in refractive index between the silicon nitride layer and the tungsten trioxide layer is 1.85 to 1.70, 0.15, the difference in refractive index between the polymer material layer and the tungsten trioxide layer is 1.70 to 1.52, 0.18, and the difference in refractive index between the silicon nitride layer and the tungsten trioxide layer is smaller and the difference in refractive index between the polymer material layer and the tungsten trioxide layer is smaller than 0.33. That is, the encapsulation film 10 reduces the reflectivity of light in the encapsulation film 10 by adding a layer of tungsten trioxide between the silicon nitride layer and the polymer material layer.

Because the process for preparing the silicon oxide and the silicon oxynitride is similar to the process for preparing the silicon nitride, the corresponding silicon oxide, the corresponding silicon oxynitride and the corresponding silicon nitride can be prepared by controlling and introducing different gases. These gases may include monosilane, oxygen, and ammonia, among others. Compared with the first transition layer 13 made of other materials, the first transition layer 13 made of silicon oxide or silicon oxynitride has a simpler manufacturing process, and can obtain the corresponding required material simply by controlling different gases without adding a new process in the manufacturing process.

Referring to fig. 2, in some embodiments, the first transition layer 13 may include a first layer 131 and a second layer 132, and the encapsulating film 10 may include a buffer layer 12, a second layer 132, a first layer 131, and a first protection layer 11 sequentially stacked. Wherein the refractive index of the first layer 131 of the first transition layer 13 is between the first refractive index of the first protective layer 11 and the refractive index of the second layer 132; the refractive index of the second layer 132 of the first transition layer 13 is between the refractive index of the first layer 131 and the second refractive index of the buffer layer 12. For example, the first protective layer 11 is formed of silicon nitride, i.e., the first refractive index is 1.85, the first layer 131 of the first transition layer 13 is formed of silicon oxynitride, i.e., the refractive index of the first layer 131 of the first transition layer 13 is 1.75, the second layer 132 of the first transition layer 13 is formed of silicon oxide, i.e., the refractive index of the second layer 132 of the first transition layer 13 is 1.65, and the buffer layer 12 may be formed of a polymer material, i.e., a fluorine-containing resin, i.e., the second refractive index is 1.52. At this time, in the encapsulating film 10, the difference between the refractive indexes of the adjacent two layers of the first protective layer 11, the first layer 131 of the first transition layer 13, the second layer 132 of the first transition layer 13 and the buffer layer 12 is smaller than the difference between the refractive indexes of the silicon nitride layer and the polymer material layer, thereby further reducing the overall reflectivity of the encapsulating film 10; furthermore, the refractive indexes of the first protective layer 11, the first layer 131 of the first transition layer 13, the second layer 132 of the first transition layer 13 and the buffer layer 12 are sequentially decreased, and the difference between the refractive indexes of the adjacent two layers is a small value, thereby further decreasing the overall reflectivity of the encapsulating film layer 10.

In some embodiments, the refractive index of the first layer 131 of the first transition layer 13 and the refractive index of the second layer 132 of the first transition layer 13 are switchable in magnitude. For example, the first protective layer 11 is formed using silicon nitride, i.e., the first refractive index is 1.85. The first layer 131 of the first transition layer 13 is formed using silicon oxide, that is, the refractive index of the first layer 131 of the first transition layer 13 is 1.65. The second layer 132 of the first transition layer 13 is formed using silicon oxynitride, i.e., the refractive index of the second layer 132 of the first transition layer 13 is 1.75. The buffer layer 12 may be formed of a polymer material, which may be a fluorine-containing resin, i.e., the second refractive index is 1.52. At this time, compared with the case that the encapsulation film 10 only includes the first protection layer 11 and the buffer layer 12, the two first transition layers 13 are added between the first protection layer 11 and the buffer layer 12, so that the refractive index difference between two adjacent layers of the encapsulation film 10 is smaller, that is, the reflectivity of the encapsulation film 10 is smaller.

In certain embodiments, the thickness of the first transition layer 13 is less than or equal to a first predetermined thickness. The first predetermined thickness may be any value of [80nm, 220nm ], for example, the first predetermined thickness may be 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 160nm, 170nm, 180nm, 190nm, 200nm, 210nm, 220nm, and so on. In an embodiment of the present application, the first predetermined thickness is 200 nm. When the first transition layer 13 is formed using silicon oxide, the thickness of the first transition layer 13 may be 95 nm; when the first transition layer 13 is formed using a layer of silicon oxynitride, the thickness of the first transition layer 13 may be 80 nm; when the first transition layer 13 is formed using a layer of silicon oxide and a layer of silicon oxynitride, the thickness of the first transition layer 13 may be 175 nm. Of course, the first transition layer 13 may have other thicknesses, which are not listed here. Since the thickness of the first protection layer 11 may be 1000nm and the thickness of the buffer layer 12 may be 8000nm, when the thickness of the first transition layer 13 is less than or equal to the first predetermined thickness, the thickness of the first transition layer 13 has a smaller influence on the thickness of the entire encapsulation film 10, and the encapsulation film 10 is thinner.

Referring to fig. 3, the encapsulation film 10 of the present disclosure may further include a second protection layer 14, and the buffer layer 12 is disposed between the first protection layer 11 and the second protection layer 14. The first protective layer 11 and the second protective layer 14 can effectively protect the elements (such as the fingerprint module or the display layer 20 shown in fig. 8) protected by the encapsulation film layer 10. The second protection layer 14 may be made of the same material as the first protection layer 11, for example, the second protection layer 14 is made of silicon nitride. Of course, the second protective layer 14 may be different from the first protective layer 11 in material. In the embodiment of the present application, the first protective layer 11 and the second protective layer 14 are both formed of silicon nitride, the compactness of the structure of the silicon nitride material can meet the requirement of normal use, and the manufacturing process of the silicon nitride is relatively simple, so the manufacturing cost of the encapsulating film layer 10 can be reduced. The second protection layer 14 formed by using silicon nitride can prevent moisture, oxygen, etc. from penetrating through the second protection layer 14 to damage components (e.g., the fingerprint module or the display layer 20 shown in fig. 8) protected by the encapsulation film 10.

Referring to fig. 4, in some embodiments, the second passivation layer 14 has a third refractive index, and since the second passivation layer 14 and the first passivation layer 11 are both made of silicon nitride, the third refractive index may be equal to the first refractive index, which may be 1.85. When the difference between the third refractive index and the second refractive index is greater than or equal to the predetermined refractive index, it indicates that the difference between the refractive indexes of the buffer layer 12 and the second protection layer 14 is relatively large, therefore, a second transition layer 15 may be disposed in the packaging film 10, and the refractive index of the second transition layer 15 is between the third refractive index and the second refractive index, so as to reduce the reflectivity of the packaging film 10. When the difference between the third refractive index and the second refractive index is smaller than the predetermined refractive index, which indicates that the difference between the refractive indexes of the buffer layer 12 and the second protection layer 14 is smaller, the reflectivity in the packaging film layer 10 is smaller, and therefore, the second transition layer 15 does not need to be disposed in the packaging film layer 10.

In some embodiments, the second transition layer 15 may be formed using silicon oxide. When the first transition layer 13 is formed of silicon oxide, the encapsulation film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, and a silicon nitride layer, which are sequentially stacked. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer, which are stacked in sequence. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon oxide layer, and a silicon nitride layer, which are sequentially stacked; alternatively, the packaging film 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer stacked in sequence.

In some embodiments, the second transition layer 15 may be formed using silicon oxynitride. When the first transition layer 13 is formed of silicon oxide, the encapsulation film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, and a silicon nitride layer, which are sequentially stacked. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer, which are stacked in sequence. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer, which are sequentially stacked; alternatively, the packaging film 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon oxide layer, and a silicon nitride layer stacked in sequence.

Referring to fig. 5, in some embodiments, the second transition layer 15 may include a first layer 151 and a second layer 152, the first layer 151 of the second transition layer 15 may be formed using silicon oxide, and the second layer 152 of the second transition layer 15 may be formed using silicon oxynitride. When the first transition layer 13 is formed of silicon oxide, the encapsulation film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, and a silicon nitride layer, which are sequentially stacked. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer, which are stacked in sequence. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon oxide layer, and a silicon nitride layer, which are sequentially stacked; alternatively, the packaging film 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer stacked in sequence.

Of course, the materials of the first layer 151 of the second transition layer 15 and the second layer 152 of the second transition layer 15 may be interchanged. For example, the first layer 151 of the second transition layer 15 may be formed using silicon oxynitride, and the second layer 152 of the second transition layer 15 may be formed using silicon oxide. In this case, when the first transition layer 13 is formed using silicon oxide, the encapsulation film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, and a silicon nitride layer, which are stacked in this order. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, and a silicon nitride layer, which are stacked in sequence. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon oxide layer, and a silicon nitride layer, which are sequentially stacked; or the packaging film layer 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer, which are stacked in sequence.

In certain embodiments, the thickness of the second transition layer 15 is less than or equal to the second predetermined thickness. The second predetermined thickness may be the same as the first predetermined thickness, and will not be described herein. Of course, the second predetermined thickness may be different from the first predetermined thickness, for example, the second predetermined thickness is greater than the first predetermined thickness, or the second predetermined thickness is less than the first predetermined thickness, which is not listed here.

Referring to fig. 6, the encapsulation film 10 according to the present embodiment may further include a third transition layer 16. The third transition layer 16 is disposed on a side of the first protective layer 11 away from the buffer layer 12. The refractive index of the third transition layer 16 may be between the first refractive index of the first protective layer 11 and the refractive index of air. The third transition layer 16 may be one layer or may be two layers. The third transition layer 16 may be combined with any of the first transition layers 13 and/or the second transition layers 15.

In some embodiments, the third transition layer 16 may be formed using silicon oxide, and the second transition layer 15 may be formed using silicon oxide. When the first transition layer 13 is formed of silicon oxide, the encapsulation film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxide layer, which are sequentially stacked. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxide layer, which are stacked in sequence. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxide layer, which are sequentially stacked; alternatively, the packaging film 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxide layer stacked in sequence.

In some embodiments, the third transition layer 16 may be formed using silicon oxide, and the second transition layer 15 may be formed using silicon oxynitride. When the first transition layer 13 is formed of silicon oxide, the encapsulation film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxide layer, which are sequentially stacked. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxide layer, which are stacked in sequence. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxide layer, which are sequentially stacked; alternatively, the packaging film 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxide layer, which are stacked in sequence.

In some embodiments, the third transition layer 16 may be formed using silicon oxide, the second transition layer 15 may include a first layer 151 and a second layer 152, the first layer 151 of the second transition layer 15 may be formed using silicon oxide, and the second layer 152 of the second transition layer 15 may be formed using silicon oxynitride. When the first transition layer 13 is formed of silicon oxide, the encapsulation film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxide layer, which are sequentially stacked. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxide layer, which are stacked in sequence. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxide layer, which are sequentially stacked; alternatively, the packaging film 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxide layer stacked in sequence. Of course, the materials of the first layer 151 of the second transition layer 15 and the second layer 152 of the second transition layer 15 may be interchanged. For example, the first layer 151 of the second transition layer 15 may be formed using silicon oxynitride, and the second layer 152 of the second transition layer 15 may be formed using silicon oxide. When the first transition layer 13 is formed of silicon oxide, the encapsulation film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxide layer, which are sequentially stacked. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxide layer, which are stacked in sequence. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxide layer, which are sequentially stacked; alternatively, the packaging film 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxide layer stacked in sequence.

In some embodiments, the third transition layer 16 may be formed using silicon oxynitride, and the second transition layer 15 may be formed using silicon oxide. When the first transition layer 13 is formed of silicon oxide, the encapsulation film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer, which are sequentially stacked. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxynitride layer, which are stacked in sequence. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer, which are sequentially stacked; alternatively, the packaging film 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxynitride layer stacked in sequence.

In some embodiments, the third transition layer 16 may be formed using silicon oxynitride, and the second transition layer 15 may be formed using silicon oxynitride. When the first transition layer 13 is formed of silicon oxide, the encapsulation film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer, which are stacked in sequence. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxynitride layer, which are stacked in sequence. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxynitride layer, which are sequentially stacked; alternatively, the packaging film 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer stacked in sequence.

In some embodiments, the third transition layer 16 may be formed using silicon oxynitride, the second transition layer 15 may include a first layer 151 and a second layer 152, the first layer 151 of the second transition layer 15 may be formed using silicon oxide, and the second layer 152 of the second transition layer 15 may be formed using silicon oxynitride. When the first transition layer 13 is formed of silicon oxide, the encapsulation film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer, which are sequentially stacked. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxynitride layer, which are stacked in sequence. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer, which are sequentially stacked; alternatively, the packaging film 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxynitride layer stacked in sequence. Of course, the materials of the first layer 151 of the second transition layer 15 and the second layer 152 of the second transition layer 15 may be interchanged. For example, the first layer 151 of the second transition layer 15 may be formed using silicon oxynitride, and the second layer 152 of the second transition layer 15 may be formed using silicon oxide. When the first transition layer 13 is formed of silicon oxide, the encapsulation film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer, which are stacked in sequence. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxynitride layer, which are stacked in sequence. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film layer 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer, which are sequentially stacked; alternatively, the packaging film 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxynitride layer stacked in sequence.

Referring to fig. 7, in some embodiments, the third transition layer 16 may include a first layer 161 and a second layer 162, the first layer 161 of the third transition layer 16 may be formed using silicon oxide, the second layer 162 of the third transition layer 16 may be formed using silicon oxynitride, and the second transition layer 15 may be formed using silicon oxide. When the first transition layer 13 is formed of silicon oxide, the encapsulation film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer, which are sequentially stacked. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer, which are stacked in sequence. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer, which are sequentially stacked; alternatively, the packaging film 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer stacked in sequence.

In some embodiments, the first layer 161 of the third transition layer 16 may be formed using silicon oxide, the second layer 162 of the third transition layer 16 may be formed using silicon oxynitride, and the second transition layer 15 may be formed using silicon oxynitride. When the first transition layer 13 is formed of silicon oxide, the encapsulation film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer, which are sequentially stacked. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer, which are stacked in sequence. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer, which are sequentially stacked; alternatively, the packaging film 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer stacked in sequence.

In some embodiments, the first layer 161 of the third transition layer 16 may be formed using silicon oxide, the second layer 162 of the third transition layer 16 may be formed using silicon oxynitride, the second transition layer 15 may include the first layer 151 and the second layer 152, the first layer 151 of the second transition layer 15 may be formed using silicon oxide, and the second layer 152 of the second transition layer 15 may be formed using silicon oxynitride. When the first transition layer 13 is formed of silicon oxide, the encapsulation film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer, which are stacked in sequence. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer, which are stacked in sequence. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer, which are sequentially stacked; alternatively, the packaging film 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer stacked in sequence. Of course, the materials of the first layer 151 of the second transition layer 15 and the second layer 152 of the second transition layer 15 may be interchanged. For example, the first layer 152 of the second transition layer 15 may be formed using silicon oxynitride, and the second layer 152 of the second transition layer 15 may be formed using silicon oxide. When the first transition layer 13 is formed of silicon oxide, the encapsulation film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer, which are stacked in sequence. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer, which are stacked in sequence. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film layer 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer, which are sequentially stacked; alternatively, the packaging film 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer stacked in sequence.

Of course, the materials of first layer 161 and second layer 162 of third transition layer 16 may be interchanged, and in some embodiments, for example, first layer 161 of third transition layer 16 may be formed using silicon oxynitride, second layer 162 of third transition layer 16 may be formed using silicon oxide, and second transition layer 15 may be formed using silicon oxide. When the first transition layer 13 is formed of silicon oxide, the encapsulation film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer, which are sequentially stacked. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer, which are stacked in sequence. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon oxide layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer, which are sequentially stacked; alternatively, the packaging film 10 may include a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer stacked in sequence.

In some embodiments, the first layer 161 of the third transition layer 16 may be formed using silicon oxynitride, the second layer 162 of the third transition layer 16 may be formed using silicon oxide, and the second transition layer 15 may be formed using silicon oxynitride. When the first transition layer 13 is formed of silicon oxide, the encapsulation film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer, which are sequentially stacked. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer, which are stacked in sequence. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon oxide layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer, which are sequentially stacked; alternatively, the packaging film 10 may include a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer stacked in sequence.

In some embodiments, first layer 161 of third transition layer 16 may be formed using silicon oxynitride, second layer 162 of third transition layer 16 may be formed using silicon oxide, second transition layer 15 may include first layer 151 and second layer 152, first layer 151 of second transition layer 15 may be formed using silicon oxide, and second layer 152 of second transition layer 15 may be formed using silicon oxynitride. When the first transition layer 13 is formed of silicon oxide, the encapsulation film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer, which are stacked in sequence. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer, which are stacked in sequence. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film layer 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxynitride layer, a silicon oxide layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer, which are sequentially stacked; alternatively, the packaging film 10 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer stacked in sequence. Of course, the materials of the first layer 151 of the second transition layer 15 and the second layer 152 of the second transition layer 15 may be interchanged. For example, the first layer 151 of the second transition layer 15 may be formed using silicon oxynitride, and the second layer 152 of the second transition layer 15 may be formed using silicon oxide. When the first transition layer 13 is formed of silicon oxide, the encapsulation film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer, which are stacked in sequence. When the first transition layer 13 is formed of silicon oxynitride, the packaging film layer 10 includes a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer, which are stacked in sequence. When the first transition layer 13 includes the first layer 131 and the second layer 132, the encapsulation film layer 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon oxide layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer, which are sequentially stacked; alternatively, the packaging film 10 may include a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, a silicon nitride layer, a silicon oxide layer, and a silicon oxynitride layer stacked in sequence.

In some embodiments, the encapsulation film layer 10 may also lack the second transition layer 15, i.e., the encapsulation film layer 10 includes the third transition layer 16 and the first transition layer 13, without the second transition layer 15.

In certain embodiments, the thickness of the third transition layer 16 is less than or equal to a third predetermined thickness. The third predetermined thickness may be the same as the first predetermined thickness and/or the second predetermined thickness, and will not be described herein again. Of course, the third predetermined thickness may be different from the first predetermined thickness or the second predetermined thickness, which is not listed here.

Since the thicknesses of the first transition layer 13, the second transition layer 15, and the third transition layer 16 may be respectively less than or equal to the predetermined thickness, the thickness of the first transition layer 13, the second transition layer 15, and the third transition layer 16 is prevented from affecting the thickness of the encapsulation film 10.

Referring to fig. 8, a display panel 100 according to an embodiment of the present disclosure includes a display layer 20 and an encapsulation film 10 according to any of the above embodiments, wherein the display layer 20 is disposed on a side of the buffer layer 12 away from the first protection layer 11. For example, the encapsulation film layer 10 includes a second protection layer 14, a second transition layer 15, a buffer layer 12, a first transition layer 13, a first protection layer 11, and a third transition layer 16, which are sequentially stacked. In this case, the display layer 20 is disposed on a side of the second passivation layer 14 away from the second transition layer 15. The display layer 20 is arranged below the packaging film layer 10, and the display layer 20 is packaged through the packaging film layer 10, so that the display layer 20 is not interfered by external water vapor and oxygen.

Specifically, the first protective layer 11 and the second protective layer 14 may be formed of silicon nitride, and a dense molecular structure of the silicon nitride may provide a more dense protection for the display layer 20, so as to prevent external moisture and oxygen from damaging the display screen 100.

In some embodiments, the display layer 20 may include a substrate 24, an anode 23, a light emitting layer 22, and a cathode 21, which are sequentially stacked.

Specifically, the cathode 21 and the anode 23 are used to energize the light-emitting layer 22 to cause the light-emitting layer 22 to emit light and display an image. In one display screen 100, a plurality of cathodes 21, light-emitting layers 22, and anodes 23 may be provided in a matrix arrangement, and each cathode 21 and each anode 23 are controlled to be energized to cause the corresponding light-emitting layer 22 to emit light, so that an image is displayed on the display screen 100. The light emitting layer 22 may be formed of an Organic material, for example, Organic Electro-Luminescence (EL).

The substrate 24 is used to control the light emitting layer 22 to emit light to display an image. The substrate 24 is used for supporting the display layer 20 and the encapsulation film layer 10. A controller (e.g., CPU) may transmit current and signals through the substrate 24 to control the light emitting layer to emit light. The substrate 24 may include a TFT substrate.

Referring to fig. 9, in some embodiments, the display panel 100 further includes a light extraction layer 25, wherein the material of the light extraction layer 25 may be the same as the material of the light emitting layer 22, for example, the material of the light extraction layer 25 is organic EL. Of course, the light extraction layer 25 may be made of other materials, for example, the material of the light extraction layer 25 is an electron-blocking layer (EBL) or the like. The light extraction layer 25 is provided between the second protective layer 14 and the cathode 21. The second protective layer 14 can protect the light extraction layer 25 to prevent moisture and oxygen from entering the light extraction layer 25 and damaging the light extraction layer 25. The light emitted from the light-emitting layer 22 can be conducted to the encapsulation film 10 by the light extraction layer 25 to avoid multiple reflections of the light in the light-emitting layer 22 in the display panel 100, thereby increasing the light transmission efficiency of the light emitted from the light-emitting layer 22 in the display panel 100.

Referring to fig. 10, in some embodiments, substrate 24 has a fourth refractive index, and display panel 100 may further include an antireflection film 26, where antireflection film 26 is disposed on a side of substrate 24 away from anode 23. The refractive index of antireflection film 26 is between the fourth refractive index and the refractive index of air. For example, the fourth refractive index of the substrate 24 is 1.5, and the refractive index of air is about 1, so that light passing through the encapsulation film 10 is reflected when passing through the substrate 24. Therefore, when the refractive index of antireflection film 26 is at (1, 1.5), light enters air while passing through substrate 24, and the reflectance is reduced.

In some embodiments, the display screen 100 may further include a polymer film, and the polymer film may be disposed on a side of the encapsulation film 10 away from the display layer 20. Specifically, the polymer film may be disposed on a side of the third transition layer 16 away from the first protection layer 11. The polymer film may be a polarizer or a touch screen film, etc., so as to implement the touch screen function of the display screen 100.

Referring to fig. 9, in one embodiment, the display panel 100 includes a third transition layer 16, a first protection layer 11, a first transition layer 13, a buffer layer 12, a second transition layer 15, a second protection layer 14, a light extraction layer 25, a cathode 21, a light emitting layer 22, an anode 23, and a substrate 24. The corresponding relationship among the materials, thicknesses and refractive indexes of the third transition layer 16, the first protective layer 11, the first transition layer 13, the buffer layer 12, the second transition layer 15 and the second protective layer 14 is shown in table 1.

TABLE 1

Film layer name	Material	Thickness (nm)	Refractive index @550nm
				Third transition layer 16	Silicon oxide	95	1.65
First protective layer 11	Silicon nitride	1000	1.85
				First transition layer 13	Silicon oxide	95	1.65
Buffer layer 12	Polymer material	8000	1.52
				Second transition layer 15	Silicon oxide	95	1.65
Second protective layer 14	Silicon nitride	1000	1.85

As can be seen from table 1, the third transition layer 16, the first transition layer 13, and the second transition layer 15 are all formed of silicon oxide, the first protective layer 11 and the second protective layer 14 are all formed of silicon nitride, and the buffer layer 12 is formed of a polymer material. The display panel 100 includes a substrate 24, an anode 23, a light emitting layer 22, a cathode 21, a light extraction layer 25, a silicon nitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon nitride layer, and a silicon oxide layer, which are sequentially stacked. Referring to fig. 11, fig. 11 is an oscillation chart of the display screen 100 in simulation software, and an average reflectivity of the display screen 100 obtained from the oscillation chart is 6.07%. The average reflectivity is that 6.07% of all light (with a wavelength of 380 nm-780 nm) irradiating the display screen 100 is reflected in the display screen 100.

In another embodiment, as shown in fig. 9, the display panel 100 includes a third transition layer 16, a first passivation layer 11, a first transition layer 13, a buffer layer 12, a second transition layer 15, a second passivation layer 14, a light extraction layer 25, a cathode 21, a light emitting layer 22, an anode 23, and a substrate 24. The corresponding relationship among the material, thickness and refractive index of the third transition layer 16, the first protection layer 11, the first transition layer 13, the buffer layer 12, the second transition layer 15 and the second protection layer 14 is shown in table 2.

TABLE 2

Film layer name	Material	Thickness (nm)	Refractive index @550nm
				Third transition layer 16	Silicon oxynitride	80	1.75
First protective layer 11	Silicon nitride	1000	1.85
				First transition layer 13	Silicon oxynitride	80	1.75
Buffer layer 12	Polymer material	8000	1.52
				Second transition layer 15	Silicon oxynitride	80	1.75
Second protective layer 14	Silicon nitride	1000	1.85

As can be seen from table 2, the third transition layer 16, the first transition layer 13, and the second transition layer 15 are all formed of silicon oxynitride, the first protective layer 11 and the second protective layer 14 are all formed of silicon nitride, and the buffer layer 12 is formed of a polymer material. The display panel 100 includes a substrate 24, an anode 23, a light emitting layer 22, a cathode 21, a light extraction layer 25, a silicon nitride layer, a silicon oxynitride layer, a polymer material layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon oxynitride layer, which are sequentially stacked. Referring to fig. 12, fig. 12 is an oscillation chart of the display screen 100 in simulation software, and the average reflectivity of the display screen 100 is 6.17% according to the oscillation chart.

In another embodiment, as shown in fig. 9, the display panel 100 includes a third transition layer 16, a first passivation layer 11, a first transition layer 13, a buffer layer 12, a second transition layer 15, a second passivation layer 14, a light extraction layer 25, a cathode 21, a light emitting layer 22, an anode 23, and a substrate 24. The corresponding relationship among the material, thickness and refractive index of the third transition layer 16, the first protection layer 11, the first transition layer 13, the buffer layer 12, the second transition layer 15 and the second protection layer 14 is shown in table 3.

TABLE 3

As can be seen from table 3, the third transition layer 16, the first transition layer 13, and the second transition layer 15 are formed of silicon oxide and silicon oxynitride, the first protective layer 11 and the second protective layer 14 are formed of silicon nitride, and the buffer layer 12 is formed of a polymer material. Because the refractive index of the silicon oxynitride is greater than that of the silicon oxide, the silicon oxynitride is arranged on a layer close to the silicon nitride, so that the difference of the refractive indexes of two adjacent layers of films is smaller. The average reflectivity of the display screen 100 is reduced. The display panel 100 includes a substrate 24, an anode 23, a light-emitting layer 22, a cathode 21, a light extraction layer 25, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a polymer material layer, a silicon oxide layer, a silicon oxynitride layer, a silicon nitride layer, a silicon oxynitride layer, and silicon oxide, which are sequentially stacked. Referring to fig. 13, fig. 13 is an oscillation chart of the display screen 100 in the simulation software, and the average reflectivity of the display screen 100 is 5.56% according to the oscillation chart.

In addition, in some embodiments, encapsulation rete 10 can also be used for encapsulating the fingerprint module, so can prevent that external steam, gas etc. from causing the damage to the fingerprint module in getting into the fingerprint module.

Referring to fig. 14 and fig. 15, an electronic device 1000 according to an embodiment of the present disclosure includes a camera 200 and any one of the display screens 100, where the display screen 100 includes a display area 110 for displaying an image, the display area 110 is formed with a front surface 111 and a back surface 112 opposite to each other, light emitted from the display screen 100 is emitted to the outside along the direction of the back surface 112 pointing to the front surface 111 and passing through the buffer layer 12, the first transition layer 13 and the first protection layer 11, and the camera 200 is disposed on a side of the back surface 112 of the display layer 20.

Specifically, the camera 200 may be a front-mounted under-screen camera, and external light is received by the camera 200 through the display screen 100. If the reflectivity of the display screen 100 is too large, more reflections will occur in the display screen 100, and the light reflected by the display screen 100 may be finally received by the camera 200 again, which affects the imaging definition of the camera 200. Therefore, the first transition layer 13, the second transition layer 15 and the third transition layer 16 are added in the display screen 100 to reduce the average reflectivity of the display screen 100 and improve the imaging definition of the camera 200. Of course, when light of the display layer in the display screen 100 passes through the packaging film, the reflectivity is smaller, and the display effect of the display screen 100 in the electronic device 100 is improved.

The display screen 100 and the electronic device 1000 according to the embodiment of the present application are provided with the first transition layer 13 between the first protective layer 11 and the buffer layer 12, and the refractive index of the first transition layer 13 is between the refractive index of the first protective layer 11 and the refractive index of the buffer layer 12, so that light can propagate between the first protective layer 11 and the first transition layer 13, and between the first transition layer 13 and the buffer layer 12, which have a small difference in refractive index. Compare in that light directly passes first protective layer 11 and buffer layer 12, the reflectivity that light passed first protective layer 11, first transition layer 13 in proper order and buffer layer 12 is littleer, has reduced the reflection that takes place between first protective layer 11 and buffer layer 12, is favorable to light to pass encapsulation rete 10 better, and the camera that sets up under the screen can receive more light, and the formation of image quality is preferred. On the other hand, the reflectivity of the light emitted by the display screen 100 (shown in fig. 15) when the light propagates between the buffer layer 12 and the first transition layer 13, and between the first transition layer 13 and the first protective layer 11 is smaller, so that the image of the display screen 100 seen by the user is clearer, and the user experience is improved.

In the description herein, reference to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present application, "plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

Any process or method descriptions in flow charts or otherwise described herein may be understood as representing modules, segments, or portions of code which include one or more executable instructions for implementing specific logical functions or steps of the process, and the scope of the preferred embodiments of the present application includes other implementations in which functions may be executed out of order from that shown or discussed, including substantially concurrently or in reverse order, depending on the functionality involved, as would be understood by those reasonably skilled in the art of the present application.

Although embodiments of the present application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present application, and that variations, modifications, substitutions and alterations may be made to the above embodiments by those of ordinary skill in the art within the scope of the present application.

Claims

1. An encapsulating film, comprising:

a first protective layer having a first refractive index;

the buffer layer is provided with a second refractive index, the difference value between the first refractive index and the second refractive index is larger than a preset refractive index, and the buffer layer is used for reducing the stress borne by the packaging film layer when the packaging film layer is bent; and

a first transition layer disposed between the first protective layer and the buffer layer, a refractive index of the first transition layer being between the first refractive index and the second refractive index.

2. The encapsulating film layer of claim 1, wherein the first protective layer is formed of silicon nitride, and the buffer layer is formed of a polymer material.

3. The encapsulation film layer of claim 2, wherein the first transition layer is formed of silicon oxide or silicon oxynitride.

4. The encapsulating film layer of claim 1, wherein the first transition layer comprises a first layer and a second layer, and the buffer layer, the second layer, the first layer, and the first protective layer are sequentially stacked.

5. The encapsulation film layer of claim 4, wherein the first layer has a refractive index between the first refractive index and the second layer, and the second layer has a refractive index between the first layer refractive index and the second refractive index.

6. The encapsulating film layer as claimed in claim 5, wherein the first protective layer is formed of silicon nitride, the first layer is formed of silicon oxynitride, the second layer is formed of silicon oxide, and the buffer layer is formed of a polymer material.

7. The encapsulating film layer of any one of claims 1-6, further comprising:

a second protective layer, the buffer layer disposed between the first protective layer and the second protective layer.

8. The packaging film layer of claim 7, wherein the second protective layer has a third refractive index that differs from the second refractive index by more than the predetermined refractive index, the packaging film layer further comprising:

the second transition layer is arranged between the buffer layer and the second protection layer, the refractive index of the second transition layer is between the third refractive index and the second refractive index, and the second transition layer is formed by silicon oxide or silicon oxynitride.

9. The encapsulating film layer of claim 8, further comprising:

the third transition layer is arranged on one side of the buffer layer, which is far away from the first protective layer, the refractive index of the third transition layer is between the first refractive index and the refractive index of air, and the second transition layer is formed by silicon oxide or silicon oxynitride.

10. The encapsulation film layer of claim 9, wherein the thickness of the first transition layer is less than a first predetermined thickness; and/or

The thickness of the second transition layer is smaller than a second preset thickness; and/or

The thickness of the third transition layer is smaller than a third preset thickness.

11. A display screen, comprising:

a display layer for displaying an image; and

the encapsulating film layer of any one of claims 1 to 10, wherein the display layer is disposed on a side of the buffer layer away from the first protective layer.

12. The display panel according to claim 11, wherein the display layer includes a substrate, an anode, a light-emitting layer, and a cathode, which are stacked in this order, wherein the cathode and the anode are configured to energize the light-emitting layer to cause the light-emitting layer to emit light and display an image; the substrate is used for controlling the light emitting layer to emit light so as to display an image.

13. The display screen of claim 12, further comprising:

a light extraction layer disposed between the second protective layer and the cathode, the light extraction layer being configured to conduct light of the light emitting layer to the encapsulation film layer.

14. The display screen of claim 12, wherein the substrate has a fourth refractive index, the display screen further comprising:

the antireflection film is arranged on one side of the substrate, which is far away from the anode, and the refractive index of the antireflection film is between the fourth refractive index and the refractive index of air.

15. An electronic device, comprising:

a camera; and

the display screen of any one of claims 11 to 14, wherein the display screen includes a display area for displaying an image, the display area is formed with a front surface and a back surface opposite to each other, light emitted from the display screen is emitted to the outside along a direction in which the back surface points to the front surface and passes through the buffer layer, the first transition layer and the first protective layer, and the camera is disposed on a side of the display layer where the back surface is located.