WO2021143518A1 - Bulk acoustic wave duplex filter - Google Patents

Bulk acoustic wave duplex filter Download PDF

Info

Publication number
WO2021143518A1
WO2021143518A1 PCT/CN2020/140938 CN2020140938W WO2021143518A1 WO 2021143518 A1 WO2021143518 A1 WO 2021143518A1 CN 2020140938 W CN2020140938 W CN 2020140938W WO 2021143518 A1 WO2021143518 A1 WO 2021143518A1
Authority
WO
WIPO (PCT)
Prior art keywords
filter
metal plate
acoustic wave
bulk acoustic
metal
Prior art date
Application number
PCT/CN2020/140938
Other languages
French (fr)
Chinese (zh)
Inventor
庞慰
徐利军
Original Assignee
诺思(天津)微系统有限责任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 诺思(天津)微系统有限责任公司 filed Critical 诺思(天津)微系统有限责任公司
Publication of WO2021143518A1 publication Critical patent/WO2021143518A1/en

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/64Filters using surface acoustic waves

Definitions

  • the present invention relates to the field of communication technology, in particular to a bulk acoustic wave duplex filter.
  • the volume of the bulk acoustic wave resonator and the filter composed of it is greatly reduced compared with the traditional electromagnetic filter.
  • the crystal orientation growth of the piezoelectric crystal can be well controlled at present, the loss of the resonator is extremely small, the quality factor is high, and it can cope with complex design requirements such as steep transition band and low insertion loss. Due to the small size, high roll-off, and low insertion loss of the BAW filter, the filter with this as the core has been widely used in communication systems.
  • frequency selective devices such as filters and duplexers in the RF front-end are required to suppress adjacent frequency bands at a higher level.
  • FBAR devices also need to be improved and improved in this regard. To improve, it is necessary to improve the level of temporary band suppression and isolation without having a greater impact on the insertion loss, and at the same time not to increase the overall size of the chip or device as much as possible.
  • the common method is to add an inductance with a large inductance on the parallel branch to change the resonant frequency of the resonator to increase the temporary band suppression, or to add additional capacitance or inductance to one or several resonators to increase the suppression point to improve the performance.
  • these methods require the addition of additional reactive components, and the values of these components are usually relatively large, which is very difficult to implement on the chip. If it is realized by winding wires on the substrate or adding discrete components outside the chip, the number and size of the substrate will inevitably increase, which will inevitably lead to an increase in the overall size of the filter or duplexer. Moreover, the added windings or discrete components are not ideal in practice, and the losses introduced by them will be superimposed on the filter, resulting in the deterioration of the overall insertion loss of the filter.
  • the above method will lead to an increase in chip loss and a substantial increase in the overall size of the chip while improving the immediate band suppression and isolation. Therefore, without increasing the overall size of the chip, how to improve the short-band suppression and transmission and reception isolation of the duplexer while increasing the power capacity of the duplexer is still a technical problem to be solved.
  • the bulk acoustic wave duplex filter provided by the present invention can block the spatial coupling between the transmitting filter and the receiving filter through the metal cover, thereby improving the relationship between the receiving channel and the transmitting channel.
  • a bulk acoustic wave duplex filter is provided.
  • a bulk acoustic wave duplex filter provided by the present invention includes a substrate, a plastic package and a metal cover, wherein:
  • a transmitting filter and a receiving filter are arranged on the substrate at intervals;
  • the plastic package covers the substrate and the transmitting filter and receiving filter
  • the metal cover is arranged on the top of the plastic package body and is embedded in the plastic package body.
  • the metal cover includes a first metal plate and at least one second metal plate disposed at the bottom of the first metal plate.
  • the second metal plate is vertically arranged at the bottom of the first metal plate, and the second metal plate is embedded in the plastic package.
  • the metal cover includes one of the first metal plate and one of the second metal plate, the second metal plate is connected to the center of the bottom of the first metal plate, and the first metal plate A T-shaped metal cover is formed with the second metal plate.
  • the transmitting filter and the receiving filter are respectively located on both sides of the second metal plate.
  • the metal cover includes one first metal plate and three second metal plates, and both ends and the center of the bottom of the first metal plate are connected with the second metal plates, And the first metal plate and the second metal plate form an inverted mountain-shaped metal cover.
  • two adjacent second metal plates and the first metal plate form an accommodating space, and the transmitting filter and the receiving filter are respectively located in the adjacent accommodating spaces.
  • the first metal plate is located directly above the transmitting filter and the receiving filter, and the distance between the first metal plate and the transmitting filter and the receiving filter is greater than 100 ⁇ m.
  • the distance between the transmitting filter and the receiving filter is greater than 150 ⁇ m.
  • the spatial coupling between the transmitting filter and the receiving filter can be blocked by the metal cover, thereby improving the isolation and mutual inhibition between the receiving channel and the transmitting channel, and It does not cause an increase in passband insertion loss, a large increase in the overall size of the chip and an increase in the complexity of the manufacturing process, and at the same time, the introduction of the metal cover can also improve the heat dissipation path and increase the power capacity.
  • FIG. 1 is a schematic diagram of the structure of a bulk acoustic wave duplex filter in the prior art
  • FIG. 2 is a schematic diagram of a structure of a bulk acoustic wave duplex filter according to an embodiment of the present invention
  • Fig. 3 is another structural schematic diagram of a bulk acoustic wave duplex filter according to an embodiment of the present invention.
  • Figure 4 is a comparison diagram of the isolation curves of Figure 1 and Figure 2;
  • Fig. 5 is a comparison diagram of the transmission characteristic curves of Fig. 1 and Fig. 2.
  • FIG. 1 is a bulk acoustic wave duplex filter in the prior art.
  • the transmitting filter 3 works, the electromagnetic waves radiated from it will enter the receiving filter 4 through spatial coupling, which will affect the normal operation of the receiving filter 4.
  • the spatial coupling between the filter 3 and the receiving filter 4 can be equivalent to a capacitor, and this capacitor will inevitably affect the isolation between the receiving and sending channels, thereby causing deterioration of the isolation and mutual suppression between the receiving channel and the transmitting channel.
  • FIG. 2 is a structural diagram of a bulk acoustic wave duplex filter according to an embodiment of the present invention.
  • the filter includes a substrate 1, a plastic package 2 and a metal cover, wherein,
  • the substrate 1 is provided with a transmitting filter 3 and a receiving filter 4 at intervals;
  • the plastic package 2 covers the substrate 1 and the transmitting filter 3 and the receiving filter 4;
  • the metal cover is set on the top of the plastic package 2 and is embedded in the plastic package 2 Inside.
  • the relationship between the receiving channel and the transmitting channel is improved. Isolation and mutual inhibition, and will neither increase the passband insertion loss, nor cause a significant increase in the overall size of the chip and increase in the complexity of the manufacturing process.
  • the introduction of the metal cover can also improve the heat dissipation path. Improve power capacity.
  • the emission filter 3 is a bulk acoustic wave emission filter, and the emission filter 3 includes an emission filter chip, and the emission filter chip is connected to the substrate 1 through solder balls 5 in a flip-chip form.
  • the receiving filter 4 is a bulk acoustic wave receiving filter, and the receiving filter 4 includes a receiving filter chip, and the receiving filter chip is connected to the substrate 1 through solder balls 5 in a flip-chip form.
  • the material of the substrate 1 can be organic materials or ceramics.
  • the substrate 1 can carry the transmitting filter chip and the receiving filter chip.
  • the substrate 1 can also be provided with a metal layer for electrical connection.
  • the plastic package 2 is generally made of epoxy resin.
  • the transmitting filter 3 and the receiving filter 4 can be plastically sealed to protect the transmitting filter chip and the receiving filter chip from damage by external forces. At the same time, it can also isolate moisture from the environment. The change affects the performance of the transmitting filter 3 and the receiving filter 4.
  • the substrate 1 may completely cover the top of the plastic package 2 or partly cover the top of the plastic package 2.
  • the metal cover may include a first metal plate 71 and at least one second metal plate 72 disposed at the bottom of the first metal plate 71.
  • the number of the second metal plates 72 may be one or more. The number of the second metal plates 72 can be set according to actual needs.
  • the second metal plate 72 may be vertically arranged at the bottom of the first metal plate 71, and the second metal plate 72 is embedded in the plastic package body 2.
  • the bottom of the first metal plate 71 is connected to the top of the second metal plate 72.
  • the bottom of the second metal plate 72 may be in contact with the substrate 1 or may be located above the substrate 1.
  • the metal cover includes a first metal plate 71 and a second metal plate 72 (the first metal plate 71 and the second metal plate 72 are perpendicular to each other).
  • a second metal plate 72 is connected to the center of the bottom of the 71, and the first metal plate 71 and the second metal plate 72 form a T-shaped metal cover.
  • the transmitting filter 3 and the receiving filter 4 are respectively located on both sides of the second metal plate 72.
  • the first metal plate 71 and the second metal plate 72 separate the transmitting filter 3 and the receiving filter 4, which can prevent the spatial coupling between the transmitting filter 3 and the receiving filter 4, so that the transmitting filter 3 and the receiving filter The devices 4 will not affect each other.
  • the metal cover includes a first metal plate 71 and three second metal plates 72.
  • the two ends and the center of the first metal plate 71 are connected with the second metal plate 71.
  • the metal plate 72, and the first metal plate 71 and the second metal plate 72 form an inverted mountain-shaped metal cover.
  • the three second metal plates 72 are arranged in parallel and at equal intervals, wherein one second metal plate 72 is located in the middle of the first metal plate 71, and the second metal plate 72 separates the transmitting filter 3 from the receiving filter 4;
  • the two second metal plates 72 are respectively located at both ends of the first metal plate 71.
  • the two adjacent second metal plates 72 and the first metal plate 71 form an accommodating space, and the transmitting filter 3 and the receiving filter 4 are respectively located in the adjacent accommodating spaces. Since the transmitting filter 3 and the receiving filter 4 are respectively located in different accommodation spaces, the spatial coupling between the transmitting filter 3 and the receiving filter 4 can be effectively prevented, thereby making the transmitting filter 3 and the receiving filter 4 Will not affect each other.
  • the first metal plate 71 may be located directly above the transmitting filter 3 and the receiving filter 4, and the distance between the first metal plate 71 and the transmitting filter 3 and the receiving filter 4 is greater than 100 ⁇ m .
  • the distance between the transmitting filter 3 and the receiving filter 4 may be greater than 150 ⁇ m.
  • the bulk acoustic wave duplex filter shown in FIG. 1 and the bulk acoustic wave duplex filter shown in FIG. 2 of the embodiment of the present invention are used in the prior art. In comparison, the following results are obtained.
  • Fig. 4 is a comparison diagram of isolation curves, the solid line is the isolation curve corresponding to Fig. 1, and the dashed line is the isolation curve corresponding to Fig. 2 of the present invention. It can be clearly seen that the isolation of the dotted line is obviously better than the solid line in the two frequency ranges of 880MHz to 915MHz and 925MHz to 960MHz of interest. Therefore, it can be explained that the bulk acoustic wave duplex filter in the embodiment of the present application can help improve isolation.
  • Fig. 5 is a comparison diagram of transmission characteristic curves, the solid line is the curve corresponding to Fig. 1, and the dashed line is the curve corresponding to Fig. 2 of the present invention. It can be seen that the mutual suppression of the dotted lines in the two frequency bands of 880MHz ⁇ 915MHz and 925MHz ⁇ 960MHz has also been improved.
  • the thermal conductivity of metal is much higher than that of epoxy resin, for example, the thermal conductivity of copper is 401W/mk and epoxy resin is 0.3W/mk. Therefore, the bulk acoustic wave duplex filter provided by this application can greatly improve the heat dissipation effect. Therefore, the power capacity has also been greatly improved.
  • the bulk acoustic wave duplex filter provided by the present invention can not only improve the isolation of the duplexer, but also improve the heat dissipation, without increasing the size and complexity of the transceiver filter.
  • the purpose of the power capacity of the duplexer is not only improve the isolation of the duplexer, but also improve the heat dissipation, without increasing the size and complexity of the transceiver filter. The purpose of the power capacity of the duplexer.

Abstract

Provided in the present invention is a bulk acoustic wave duplex filter, comprising a substrate, a plastic sealing body and a metal cover. A transmitting filter and a receiving filter are arranged on the substrate at intervals; the plastic sealing body covers the substrate, the transmitting filter and the receiving filter; and the metal cover is arranged at the top of the plastic sealing body and embedded into the plastic sealing body. According to the bulk acoustic wave duplex filter provided by the present invention, the metal cover can block space coupling between the transmitting filter and the receiving filter, thereby improving the isolation and mutual inhibition between a receiving channel and a transmitting channel; in this way, not only can the increase of passband insertion loss be prevented, but the overall size of a chip will not increase significantly and the manufacturing process will not become more complicated; meanwhile, due to the introduction of the metal cover, a heat dissipation path is improved and the power capacity is increased.

Description

一种体声波双工滤波器A Bulk Acoustic Wave Duplex Filter 技术领域Technical field
本发明涉及通讯技术领域,特别地涉及一种体声波双工滤波器。The present invention relates to the field of communication technology, in particular to a bulk acoustic wave duplex filter.
背景技术Background technique
随着无线通信技术的快速发展,许多射频器件在通信领域得到广泛应用,例如,在个人移动终端如手机上会有大量的滤波器、双工器等使用,主要用来滤除不需要的射频信号,改善发射通路或接收通路的性能。同时除了对滤波器、双工器性能上有较高的要求外,还对体积尺寸提出较高的要求,而体声波滤波器刚好可以满足其要求。体声波谐振器利用压电晶体的压电效应产生谐振。由于谐振由机械波产生,而非电磁波作为谐振来源,机械波的波长比电磁波波长短很多。因此,体声波谐振器及其组成的滤波器体积相对传统的电磁滤波器尺寸大幅度减小。另一方面,由于压电晶体的晶向生长目前能够良好控制,谐振器的损耗极小,品质因数高,能够应对陡峭过渡带和低插入损耗等复杂设计要求。由于体声波滤波器具有的尺寸小、高滚降、低插损等特性,以此为核心的滤波器在通讯系统中得到了广泛的应用。With the rapid development of wireless communication technology, many radio frequency devices have been widely used in the communication field. For example, a large number of filters and duplexers are used in personal mobile terminals such as mobile phones, mainly to filter out unwanted radio frequencies. Signal to improve the performance of the transmitting path or the receiving path. At the same time, in addition to higher requirements on the performance of filters and duplexers, higher requirements are also placed on the volumetric size, and the bulk acoustic wave filter can just meet its requirements. The bulk acoustic wave resonator uses the piezoelectric effect of the piezoelectric crystal to generate resonance. Since resonance is generated by mechanical waves instead of electromagnetic waves as the source of resonance, the wavelength of mechanical waves is much shorter than that of electromagnetic waves. Therefore, the volume of the bulk acoustic wave resonator and the filter composed of it is greatly reduced compared with the traditional electromagnetic filter. On the other hand, since the crystal orientation growth of the piezoelectric crystal can be well controlled at present, the loss of the resonator is extremely small, the quality factor is high, and it can cope with complex design requirements such as steep transition band and low insertion loss. Due to the small size, high roll-off, and low insertion loss of the BAW filter, the filter with this as the core has been widely used in communication systems.
当前,面对越来越拥挤的频率资源,要求射频前端的滤波器、双工器等频率选择性器件对于相邻频带的抑制水平也越来越高,FBAR器件也需要在这方面进行改进和提高,既要提高临带抑制和隔离度水平,又不能对插损有较大影响,同时还要尽可能不增加芯片或器件的整体尺寸。At present, in the face of increasingly crowded frequency resources, frequency selective devices such as filters and duplexers in the RF front-end are required to suppress adjacent frequency bands at a higher level. FBAR devices also need to be improved and improved in this regard. To improve, it is necessary to improve the level of temporary band suppression and isolation without having a greater impact on the insertion loss, and at the same time not to increase the overall size of the chip or device as much as possible.
常见的方法是在并联支路上增加大感值的电感改变谐振器谐振频率来增加临带抑制,或是在某个或某几个谐振器上增加额外的电容或电感来增加抑制点从而改善临带抑制。但这些方法都需要增加额外的电抗性元件,而且这些元件的取值通常都是比较大的,要在芯片上实现很困难。如果通过在基板上绕线或是在芯片外增加分立元件的方式来实现,则必然会增加基板的层数和尺寸,从而不可避免的导致滤波 器或双工器整体尺寸的增加。而且,实际中增加的绕线或分立元件都不是理想的,其引入的损耗都会叠加到滤波器上,导致滤波器整体插损的恶化。The common method is to add an inductance with a large inductance on the parallel branch to change the resonant frequency of the resonator to increase the temporary band suppression, or to add additional capacitance or inductance to one or several resonators to increase the suppression point to improve the performance. With suppression. However, these methods require the addition of additional reactive components, and the values of these components are usually relatively large, which is very difficult to implement on the chip. If it is realized by winding wires on the substrate or adding discrete components outside the chip, the number and size of the substrate will inevitably increase, which will inevitably lead to an increase in the overall size of the filter or duplexer. Moreover, the added windings or discrete components are not ideal in practice, and the losses introduced by them will be superimposed on the filter, resulting in the deterioration of the overall insertion loss of the filter.
综上可知,上述方法在改善临带抑制和隔离度的同时,会导致芯片损耗的增加和芯片整体尺寸的大幅增加。因此,如何在不增大芯片整体尺寸的情况下,改善双工器临带抑制和收发隔离度的同时,提高双工器的功率容量,仍是待解决的技术问题。In summary, the above method will lead to an increase in chip loss and a substantial increase in the overall size of the chip while improving the immediate band suppression and isolation. Therefore, without increasing the overall size of the chip, how to improve the short-band suppression and transmission and reception isolation of the duplexer while increasing the power capacity of the duplexer is still a technical problem to be solved.
发明内容Summary of the invention
有鉴于此,本发明提供的体声波双工滤波器,通过所述金属盖能够阻断所述发射滤波器与所述接收滤波器之间的空间耦合,从而改善了接收通道与发射通道之间的隔离度和相互抑制。In view of this, the bulk acoustic wave duplex filter provided by the present invention can block the spatial coupling between the transmitting filter and the receiving filter through the metal cover, thereby improving the relationship between the receiving channel and the transmitting channel. The isolation and mutual inhibition.
为实现上述目的,根据本发明的一个方面,提供了一种体声波双工滤波器。To achieve the above objective, according to one aspect of the present invention, a bulk acoustic wave duplex filter is provided.
本发明提供的一种体声波双工滤波器,包括基板、塑封体以及金属盖,其中,A bulk acoustic wave duplex filter provided by the present invention includes a substrate, a plastic package and a metal cover, wherein:
所述基板上间隔地设置有发射滤波器和接收滤波器;A transmitting filter and a receiving filter are arranged on the substrate at intervals;
所述塑封体包覆所述基板以及所述发射滤波器和接收滤波器;The plastic package covers the substrate and the transmitting filter and receiving filter;
所述金属盖设置于所述塑封体的顶部,且嵌入所述塑封体内。The metal cover is arranged on the top of the plastic package body and is embedded in the plastic package body.
可选地,所述金属盖包括第一金属板以及设置于所述第一金属板底部的至少一个第二金属板。Optionally, the metal cover includes a first metal plate and at least one second metal plate disposed at the bottom of the first metal plate.
可选地,所述第二金属板垂直设置于所述第一金属板的底部,所述第二金属板嵌入所述塑封体内。Optionally, the second metal plate is vertically arranged at the bottom of the first metal plate, and the second metal plate is embedded in the plastic package.
可选地,所述金属盖包括一个所述第一金属板以及一个所述第二金属板,所述第一金属板的底部中心连接有所述第二金属板,且所述第一金属板与所述第二金属板形成T型金属盖。Optionally, the metal cover includes one of the first metal plate and one of the second metal plate, the second metal plate is connected to the center of the bottom of the first metal plate, and the first metal plate A T-shaped metal cover is formed with the second metal plate.
可选地,所述发射滤波器与所述接收滤波器分别位于所述第二金属板的两侧。Optionally, the transmitting filter and the receiving filter are respectively located on both sides of the second metal plate.
可选地,所述金属盖包括一个所述第一金属板以及三个所述第二 金属板,所述第一金属板底部上的两端以及中心处均连接有所述第二金属板,且所述第一金属板与所述第二金属板形成倒山字型金属盖。Optionally, the metal cover includes one first metal plate and three second metal plates, and both ends and the center of the bottom of the first metal plate are connected with the second metal plates, And the first metal plate and the second metal plate form an inverted mountain-shaped metal cover.
可选地,相邻两个所述第二金属板与所述第一金属板形成一个容纳空间,所述发射滤波器与所述接收滤波器分别位于相邻的容纳空间内。Optionally, two adjacent second metal plates and the first metal plate form an accommodating space, and the transmitting filter and the receiving filter are respectively located in the adjacent accommodating spaces.
可选地,所述第一金属板位于所述发射滤波器以及所述接收滤波器的正上方,且所述第一金属板与所述发射滤波器以及所述接收滤波器之间的距离大于100μm。Optionally, the first metal plate is located directly above the transmitting filter and the receiving filter, and the distance between the first metal plate and the transmitting filter and the receiving filter is greater than 100μm.
可选地,所述发射滤波器与所述接收滤波器之间的距离大于150μm。Optionally, the distance between the transmitting filter and the receiving filter is greater than 150 μm.
可选地,所述基板由有机材料制成;所述封装体由环氧树脂制成。Optionally, the substrate is made of organic material; the package body is made of epoxy resin.
根据本发明的技术方案,通过所述金属盖能够阻断所述发射滤波器与所述接收滤波器之间的空间耦合,从而改善了接收通道与发射通道之间的隔离度和相互抑制,而且既不会造成通带插损的增加,又不会造成芯片整体尺寸的大幅度增加及制造工艺复杂性的增加,同时由于所述金属盖的引入,还能改善散热路径,提高功率容量。According to the technical solution of the present invention, the spatial coupling between the transmitting filter and the receiving filter can be blocked by the metal cover, thereby improving the isolation and mutual inhibition between the receiving channel and the transmitting channel, and It does not cause an increase in passband insertion loss, a large increase in the overall size of the chip and an increase in the complexity of the manufacturing process, and at the same time, the introduction of the metal cover can also improve the heat dissipation path and increase the power capacity.
附图说明Description of the drawings
附图用于更好地理解本发明,不构成对本发明的不当限定。其中:The drawings are used to better understand the present invention, and do not constitute an improper limitation of the present invention. in:
图1是现有技术中的体声波双工滤波器的结构示意图;FIG. 1 is a schematic diagram of the structure of a bulk acoustic wave duplex filter in the prior art;
图2是根据本发明实施例的体声波双工滤波器的一种结构示意图;2 is a schematic diagram of a structure of a bulk acoustic wave duplex filter according to an embodiment of the present invention;
图3是根据本发明实施例的体声波双工滤波器的另一结构示意图;Fig. 3 is another structural schematic diagram of a bulk acoustic wave duplex filter according to an embodiment of the present invention;
图4是图1与图2隔离度曲线的对比图;Figure 4 is a comparison diagram of the isolation curves of Figure 1 and Figure 2;
图5是图1与图2传输特性曲线的对比图。Fig. 5 is a comparison diagram of the transmission characteristic curves of Fig. 1 and Fig. 2.
其中,1-基板,2-塑封体,3-发射滤波器,4-接收滤波器,5-焊球,71-第一金属板,72-第二金属板。Among them, 1-substrate, 2-plastic package, 3-transmitting filter, 4-receiving filter, 5-solder ball, 71-first metal plate, 72-second metal plate.
具体实施方式Detailed ways
以下结合附图对本发明的示范性实施例做出说明,其中包括本发 明实施例的各种细节以助于理解,应当将它们认为仅仅是示范性的。因此,本领域普通技术人员应当认识到,可以对这里描述的实施例做出各种改变和修改,而不会背离本发明的范围和精神。同样,为了清楚和简明,以下的描述中省略了对公知功能和结构的描述。The following describes exemplary embodiments of the present invention with reference to the accompanying drawings, which include various details of the embodiments of the present invention to facilitate understanding, and should be regarded as merely exemplary. Therefore, those of ordinary skill in the art should recognize that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of the present invention. Likewise, for clarity and conciseness, descriptions of well-known functions and structures are omitted in the following description.
如图1所示的是现有技术中的体声波双工滤波器,发射滤波器3工作时,其辐射的电磁波会通过空间耦合进入接收滤波器4,进而影响接收滤波器4正常工作,发射滤波器3和接收滤波器4之间的空间耦合可以等效为一个电容,该电容势必会影响收发之间的隔离度,从而造成接收通道和发射通道之间的隔离度和相互抑制变差。As shown in Figure 1 is a bulk acoustic wave duplex filter in the prior art. When the transmitting filter 3 works, the electromagnetic waves radiated from it will enter the receiving filter 4 through spatial coupling, which will affect the normal operation of the receiving filter 4. The spatial coupling between the filter 3 and the receiving filter 4 can be equivalent to a capacitor, and this capacitor will inevitably affect the isolation between the receiving and sending channels, thereby causing deterioration of the isolation and mutual suppression between the receiving channel and the transmitting channel.
本发明对此作出改进,如图2所示,图2是根据本发明实施例的体声波双工滤波器的一种结构示意图,该滤波器包括基板1、塑封体2以及金属盖,其中,基板1上间隔地设置有发射滤波器3和接收滤波器4;塑封体2包覆基板1以及发射滤波器3和接收滤波器4;金属盖设置于塑封体2的顶部,且嵌入塑封体2内。The present invention makes an improvement to this. As shown in FIG. 2, FIG. 2 is a structural diagram of a bulk acoustic wave duplex filter according to an embodiment of the present invention. The filter includes a substrate 1, a plastic package 2 and a metal cover, wherein, The substrate 1 is provided with a transmitting filter 3 and a receiving filter 4 at intervals; the plastic package 2 covers the substrate 1 and the transmitting filter 3 and the receiving filter 4; the metal cover is set on the top of the plastic package 2 and is embedded in the plastic package 2 Inside.
根据图2所示的结构,通过在封装体的顶部设置金属盖,并通过金属盖阻断发射滤波器3与接收滤波器4之间的空间耦合,从而改善了接收通道与发射通道之间的隔离度和相互抑制,而且既不会造成通带插损的增加,又不会造成芯片整体尺寸的大幅度增加及制造工艺复杂性的增加,同时由于金属盖的引入,还能改善散热路径,提高功率容量。According to the structure shown in FIG. 2, by providing a metal cover on the top of the package, and blocking the spatial coupling between the transmitting filter 3 and the receiving filter 4 by the metal cover, the relationship between the receiving channel and the transmitting channel is improved. Isolation and mutual inhibition, and will neither increase the passband insertion loss, nor cause a significant increase in the overall size of the chip and increase in the complexity of the manufacturing process. At the same time, the introduction of the metal cover can also improve the heat dissipation path. Improve power capacity.
发射滤波器3为体声波发射滤波器,发射滤波器3包括发射滤波芯片,发射滤波芯片以倒装的形式通过焊球5与基板1连接。The emission filter 3 is a bulk acoustic wave emission filter, and the emission filter 3 includes an emission filter chip, and the emission filter chip is connected to the substrate 1 through solder balls 5 in a flip-chip form.
接收滤波器4为体声波接收滤波器,接收滤波器4包括接收滤波芯片,接收滤波芯片以倒装的形式通过焊球5与基板1连接。The receiving filter 4 is a bulk acoustic wave receiving filter, and the receiving filter 4 includes a receiving filter chip, and the receiving filter chip is connected to the substrate 1 through solder balls 5 in a flip-chip form.
基板1的材料可采用有机材料或者陶瓷,基板1其作用一方面可起到承载发射滤波芯片以及接收滤波芯片的作用,另一方面基板1也可以设置金属层,从而起到电连接作用。The material of the substrate 1 can be organic materials or ceramics. On the one hand, the substrate 1 can carry the transmitting filter chip and the receiving filter chip. On the other hand, the substrate 1 can also be provided with a metal layer for electrical connection.
塑封体2一般为环氧树脂,可以把发射滤波器3和接收滤波器4塑封起来,起到保护作用,以免发射滤波芯片以及接收滤波芯片受到外力而损坏,同时也可以隔离潮气,以免环境的变化影响到发射滤波器3和接收滤波器4的性能。The plastic package 2 is generally made of epoxy resin. The transmitting filter 3 and the receiving filter 4 can be plastically sealed to protect the transmitting filter chip and the receiving filter chip from damage by external forces. At the same time, it can also isolate moisture from the environment. The change affects the performance of the transmitting filter 3 and the receiving filter 4.
基板1可以完全覆盖塑封体2的顶部,也可以部分覆盖塑封体2的顶部。The substrate 1 may completely cover the top of the plastic package 2 or partly cover the top of the plastic package 2.
在本发明的实施方式中,金属盖可包括第一金属板71以及设置于第一金属板71底部的至少一个第二金属板72。In the embodiment of the present invention, the metal cover may include a first metal plate 71 and at least one second metal plate 72 disposed at the bottom of the first metal plate 71.
第二金属板72的数量可以为1个或多个。第二金属板72的数量可以根据实际需要来设置。The number of the second metal plates 72 may be one or more. The number of the second metal plates 72 can be set according to actual needs.
在本发明的实施方式中,第二金属板72可垂直设置于第一金属板71的底部,第二金属板72嵌入塑封体2内。第一金属板71的底部与第二金属板72顶部连接。第二金属板72的底部可以与基板1接触,也可位于基板1的上方。In the embodiment of the present invention, the second metal plate 72 may be vertically arranged at the bottom of the first metal plate 71, and the second metal plate 72 is embedded in the plastic package body 2. The bottom of the first metal plate 71 is connected to the top of the second metal plate 72. The bottom of the second metal plate 72 may be in contact with the substrate 1 or may be located above the substrate 1.
如图2所示,在本发明的实施方式中,金属盖包括一个第一金属板71以及一个第二金属板72(第一金属板71与第二金属板72相互垂直),第一金属板71的底部中心连接有第二金属板72,且第一金属板71与第二金属板72形成T型金属盖。发射滤波器3与接收滤波器4分别位于第二金属板72的两侧。As shown in FIG. 2, in the embodiment of the present invention, the metal cover includes a first metal plate 71 and a second metal plate 72 (the first metal plate 71 and the second metal plate 72 are perpendicular to each other). A second metal plate 72 is connected to the center of the bottom of the 71, and the first metal plate 71 and the second metal plate 72 form a T-shaped metal cover. The transmitting filter 3 and the receiving filter 4 are respectively located on both sides of the second metal plate 72.
第一金属板71以及第二金属板72将发射滤波器3与接收滤波器4分割开,这样可以防止发射滤波器3与接收滤波器4之间的空间耦合,使得发射滤波器3与接收滤波器4之间不会相互影响。The first metal plate 71 and the second metal plate 72 separate the transmitting filter 3 and the receiving filter 4, which can prevent the spatial coupling between the transmitting filter 3 and the receiving filter 4, so that the transmitting filter 3 and the receiving filter The devices 4 will not affect each other.
如图3所示,在本发明的实施方式中,金属盖包括一个第一金属板71以及三个第二金属板72,第一金属板71底部上的两端以及中心处均连接有第二金属板72,且第一金属板71与第二金属板72形成倒山字型金属盖。As shown in FIG. 3, in the embodiment of the present invention, the metal cover includes a first metal plate 71 and three second metal plates 72. The two ends and the center of the first metal plate 71 are connected with the second metal plate 71. The metal plate 72, and the first metal plate 71 and the second metal plate 72 form an inverted mountain-shaped metal cover.
三个第二金属板72平行等间距设置,其中,一个第二金属板72位于第一金属板71的中部,且该第二金属板72将发射滤波器3与接收滤波器4间隔开;另外两个第二金属板72分别位于第一金属板71 的两端。The three second metal plates 72 are arranged in parallel and at equal intervals, wherein one second metal plate 72 is located in the middle of the first metal plate 71, and the second metal plate 72 separates the transmitting filter 3 from the receiving filter 4; The two second metal plates 72 are respectively located at both ends of the first metal plate 71.
相邻两个第二金属板72与第一金属板71形成一个容纳空间,发射滤波器3与接收滤波器4分别位于相邻的容纳空间内。由于发射滤波器3与接收滤波器4分别各自位于不同的容纳空间内,从而可以有效的阻止发射滤波器3与接收滤波器4之间的空间耦合,进而使得发射滤波器3与接收滤波器4之间不会相互影响。The two adjacent second metal plates 72 and the first metal plate 71 form an accommodating space, and the transmitting filter 3 and the receiving filter 4 are respectively located in the adjacent accommodating spaces. Since the transmitting filter 3 and the receiving filter 4 are respectively located in different accommodation spaces, the spatial coupling between the transmitting filter 3 and the receiving filter 4 can be effectively prevented, thereby making the transmitting filter 3 and the receiving filter 4 Will not affect each other.
在本发明的实施方式中,第一金属板71可位于发射滤波器3以及接收滤波器4的正上方,且第一金属板71与发射滤波器3以及接收滤波器4之间的距离大于100μm。发射滤波器3与接收滤波器4之间的距离可以大于150μm。In the embodiment of the present invention, the first metal plate 71 may be located directly above the transmitting filter 3 and the receiving filter 4, and the distance between the first metal plate 71 and the transmitting filter 3 and the receiving filter 4 is greater than 100 μm . The distance between the transmitting filter 3 and the receiving filter 4 may be greater than 150 μm.
试验例Test example
为了说明本发明的体声波双工滤波器的实际效果,将现有技术中用图1所示的体声波双工滤波器和本发明实施方式的图2所示的体声波双工滤波器进行对比,得出如下结果。In order to illustrate the actual effect of the bulk acoustic wave duplex filter of the present invention, the bulk acoustic wave duplex filter shown in FIG. 1 and the bulk acoustic wave duplex filter shown in FIG. 2 of the embodiment of the present invention are used in the prior art. In comparison, the following results are obtained.
图4为隔离度曲线对比图,实线是图1对应的隔离度曲线,虚线是本发明的图2所对应的隔离度曲线。可以明显看出,在所关心的880MHz~915MHz和925MHz~960MHz两个频段范围内,虚线的隔离度明显优于实线。由此可以说明,本申请实施方式中的体声波双工滤波器能够有助于改善隔离度。Fig. 4 is a comparison diagram of isolation curves, the solid line is the isolation curve corresponding to Fig. 1, and the dashed line is the isolation curve corresponding to Fig. 2 of the present invention. It can be clearly seen that the isolation of the dotted line is obviously better than the solid line in the two frequency ranges of 880MHz to 915MHz and 925MHz to 960MHz of interest. Therefore, it can be explained that the bulk acoustic wave duplex filter in the embodiment of the present application can help improve isolation.
图5为传输特性曲线对比图,实线是图1对应的曲线,虚线是本发明的图2所对应的曲线。可以看到在880MHz~915MHz和925MHz~960MHz两个频段范围内虚线的相互抑制也同样得到了改善。Fig. 5 is a comparison diagram of transmission characteristic curves, the solid line is the curve corresponding to Fig. 1, and the dashed line is the curve corresponding to Fig. 2 of the present invention. It can be seen that the mutual suppression of the dotted lines in the two frequency bands of 880MHz ~ 915MHz and 925MHz ~ 960MHz has also been improved.
另外由于金属的导热率远大于环氧树脂,例如铜的导热率为401W/m.k,环氧树脂0.3W/m.k,所以采用本申请提供的体声波双工滤波器,散热效果有较大改善,所以功率容量也有较大改善。In addition, since the thermal conductivity of metal is much higher than that of epoxy resin, for example, the thermal conductivity of copper is 401W/mk and epoxy resin is 0.3W/mk. Therefore, the bulk acoustic wave duplex filter provided by this application can greatly improve the heat dissipation effect. Therefore, the power capacity has also been greatly improved.
因此本发明提供的体声波双工滤波器,在不增加收发滤波器尺寸、复杂程度的情况下,仅通过封装形式的改变,既可以改善双工器的隔 离度,又可以改善散热,提高了双工器的功率容量的目的。Therefore, the bulk acoustic wave duplex filter provided by the present invention can not only improve the isolation of the duplexer, but also improve the heat dissipation, without increasing the size and complexity of the transceiver filter. The purpose of the power capacity of the duplexer.
上述具体实施方式,并不构成对本发明保护范围的限制。本领域技术人员应该明白的是,取决于设计要求和其他因素,可以发生各种各样的修改、组合、子组合和替代。任何在本发明的精神和原则之内所作的修改、等同替换和改进等,均应包含在本发明保护范围之内。The foregoing specific implementations do not constitute a limitation on the protection scope of the present invention. Those skilled in the art should understand that, depending on design requirements and other factors, various modifications, combinations, sub-combinations, and substitutions can occur. Any modification, equivalent replacement and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

  1. 一种体声波双工滤波器,其特征在于,包括基板、塑封体以及金属盖,其中,A bulk acoustic wave duplex filter, which is characterized by comprising a substrate, a plastic package and a metal cover, wherein:
    所述基板上间隔地设置有发射滤波器和接收滤波器;A transmitting filter and a receiving filter are arranged on the substrate at intervals;
    所述塑封体包覆所述基板以及所述发射滤波器和接收滤波器;The plastic package covers the substrate and the transmitting filter and receiving filter;
    所述金属盖设置于所述塑封体的顶部,且嵌入所述塑封体内。The metal cover is arranged on the top of the plastic package body and is embedded in the plastic package body.
  2. 根据权利要求1所述体声波双工滤波器,其特征在于,所述金属盖包括第一金属板以及设置于所述第一金属板底部的至少一个第二金属板。The bulk acoustic wave duplex filter according to claim 1, wherein the metal cover comprises a first metal plate and at least one second metal plate disposed at the bottom of the first metal plate.
  3. 根据权利要求2所述体声波双工滤波器,其特征在于,所述第二金属板垂直设置于所述第一金属板的底部,所述第二金属板嵌入所述塑封体内。3. The bulk acoustic wave duplex filter according to claim 2, wherein the second metal plate is vertically arranged at the bottom of the first metal plate, and the second metal plate is embedded in the plastic package.
  4. 根据权利要求3所述体声波双工滤波器,其特征在于,所述金属盖包括一个所述第一金属板以及一个所述第二金属板,所述第一金属板的底部中心连接有所述第二金属板,且所述第一金属板与所述第二金属板形成T型金属盖。The bulk acoustic wave duplex filter according to claim 3, wherein the metal cover comprises one of the first metal plate and one of the second metal plate, and the bottom center of the first metal plate is connected with The second metal plate, and the first metal plate and the second metal plate form a T-shaped metal cover.
  5. 根据权利要求4所述体声波双工滤波器,其特征在于,所述发射滤波器与所述接收滤波器分别位于所述第二金属板的两侧。The bulk acoustic wave duplex filter according to claim 4, wherein the transmitting filter and the receiving filter are respectively located on both sides of the second metal plate.
  6. 根据权利要求3所述体声波双工滤波器,其特征在于,所述金属盖包括一个所述第一金属板以及三个所述第二金属板,所述第一金属板底部上的两端以及中心处均连接有所述第二金属板,且所述第一金属板与所述第二金属板形成倒山字型金属盖。The bulk acoustic wave duplex filter according to claim 3, wherein the metal cover comprises one of the first metal plate and three of the second metal plates, and both ends on the bottom of the first metal plate And the center is connected with the second metal plate, and the first metal plate and the second metal plate form an inverted mountain-shaped metal cover.
  7. 根据权利要求6所述体声波双工滤波器,其特征在于,相邻两 个所述第二金属板与所述第一金属板形成一个容纳空间,所述发射滤波器与所述接收滤波器分别位于相邻的容纳空间内。The bulk acoustic wave duplex filter according to claim 6, wherein two adjacent second metal plates and the first metal plate form an accommodation space, and the transmitting filter and the receiving filter They are respectively located in adjacent accommodation spaces.
  8. 根据权利要求1所述体声波双工滤波器,其特征在于,所述第一金属板位于所述发射滤波器以及所述接收滤波器的正上方,且所述第一金属板与所述发射滤波器以及所述接收滤波器之间的距离大于100μm。The bulk acoustic wave duplex filter according to claim 1, wherein the first metal plate is located directly above the transmitting filter and the receiving filter, and the first metal plate and the transmitting filter The distance between the filter and the receiving filter is greater than 100 μm.
  9. 根据权利要求1所述体声波双工滤波器,其特征在于,所述发射滤波器与所述接收滤波器之间的距离大于150μm。The bulk acoustic wave duplex filter according to claim 1, wherein the distance between the transmitting filter and the receiving filter is greater than 150 μm.
  10. 根据权利要求1所述体声波双工滤波器,其特征在于,所述基板由有机材料制成;所述封装体由环氧树脂制成。The bulk acoustic wave duplex filter according to claim 1, wherein the substrate is made of organic material; and the package body is made of epoxy resin.
PCT/CN2020/140938 2020-01-16 2020-12-29 Bulk acoustic wave duplex filter WO2021143518A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010046417.7A CN111162755B (en) 2020-01-16 2020-01-16 Bulk acoustic wave duplex filter
CN202010046417.7 2020-01-16

Publications (1)

Publication Number Publication Date
WO2021143518A1 true WO2021143518A1 (en) 2021-07-22

Family

ID=70563372

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/140938 WO2021143518A1 (en) 2020-01-16 2020-12-29 Bulk acoustic wave duplex filter

Country Status (2)

Country Link
CN (1) CN111162755B (en)
WO (1) WO2021143518A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111162755B (en) * 2020-01-16 2021-09-21 诺思(天津)微系统有限责任公司 Bulk acoustic wave duplex filter
CN112422101B (en) * 2021-01-21 2021-04-30 中芯集成电路制造(绍兴)有限公司 Electronic device and forming method thereof

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1352514A (en) * 2000-11-02 2002-06-05 株式会社村田制作所 Composite medium filter device and communication equipment including said device
JP2004172176A (en) * 2002-11-18 2004-06-17 Taiyo Yuden Co Ltd Circuit module
CN101401206A (en) * 2006-03-29 2009-04-01 京瓷株式会社 Circuit module, wireless communication apparatus and circuit module manufacturing method
JP2010177559A (en) * 2009-01-30 2010-08-12 Taiyo Yuden Co Ltd Electronic component, and method of manufacturing the same
CN102054821A (en) * 2009-10-30 2011-05-11 日月光半导体制造股份有限公司 Packaging structure with internal shield and manufacturing method thereof
CN104347533A (en) * 2013-08-01 2015-02-11 日月光半导体制造股份有限公司 Semiconductor packaging piece and manufacture method thereof
CN111162755A (en) * 2020-01-16 2020-05-15 诺思(天津)微系统有限责任公司 Bulk acoustic wave duplex filter

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10238523B4 (en) * 2002-08-22 2014-10-02 Epcos Ag Encapsulated electronic component and method of manufacture
JP6472945B2 (en) * 2013-06-13 2019-02-20 太陽誘電株式会社 Elastic wave device
US10163871B2 (en) * 2015-10-02 2018-12-25 Qualcomm Incorporated Integrated device comprising embedded package on package (PoP) device
KR20170114313A (en) * 2016-04-04 2017-10-16 삼성전기주식회사 Baw filter and method for manufacturing the same
CN110349864A (en) * 2019-07-24 2019-10-18 气派科技股份有限公司 A kind of packaging method and chip package product of chip cooling piece
CN110492206B (en) * 2019-08-09 2021-09-21 天津大学 Duplexer

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1352514A (en) * 2000-11-02 2002-06-05 株式会社村田制作所 Composite medium filter device and communication equipment including said device
JP2004172176A (en) * 2002-11-18 2004-06-17 Taiyo Yuden Co Ltd Circuit module
CN101401206A (en) * 2006-03-29 2009-04-01 京瓷株式会社 Circuit module, wireless communication apparatus and circuit module manufacturing method
JP2010177559A (en) * 2009-01-30 2010-08-12 Taiyo Yuden Co Ltd Electronic component, and method of manufacturing the same
CN102054821A (en) * 2009-10-30 2011-05-11 日月光半导体制造股份有限公司 Packaging structure with internal shield and manufacturing method thereof
CN104347533A (en) * 2013-08-01 2015-02-11 日月光半导体制造股份有限公司 Semiconductor packaging piece and manufacture method thereof
CN111162755A (en) * 2020-01-16 2020-05-15 诺思(天津)微系统有限责任公司 Bulk acoustic wave duplex filter

Also Published As

Publication number Publication date
CN111162755B (en) 2021-09-21
CN111162755A (en) 2020-05-15

Similar Documents

Publication Publication Date Title
WO2020108529A1 (en) Duplexer
US11463069B2 (en) Acoustic wave filters with isolation
US8436697B2 (en) Surface acoustic wave filter device
US8680944B2 (en) Single-chip duplexer with isolation shield between transmit and receive filters
WO2021143518A1 (en) Bulk acoustic wave duplex filter
US20200358424A1 (en) Acoustic wave filter with shunt resonator having multiple resonant frequencies
US11476834B2 (en) Transversely-excited film bulk acoustic resonator matrix filters with switches in parallel with sub-filter shunt capacitors
JP2020053966A (en) Multilayer bulge frame in bulk elastic wave device
JP2007259296A (en) Antenna duplexer and mobile phone
EP3902137A1 (en) Band-pass filter and method for improving suppression level thereof, duplexer and electronic device
CN111211752B (en) Filter, method of manufacturing the same, multiplexer, and communication apparatus
WO2020125344A1 (en) Radio frequency piezoelectric multiplexer for improving isolation based on phase-shift network and electronic device
CN112332801B (en) Filter and multiplexer including doped resonator, and communication device
US11929733B2 (en) Transversely-excited film bulk acoustic resonator matrix filters with input and output impedances matched to radio frequency front end elements
EP4325722A2 (en) Semiconductor device, communication apparatus, and producing method thereof
TWI540850B (en) Wireless communication device and filter thereof
US7106150B2 (en) Surface acoustic wave filter
US11271541B2 (en) Microwave duplexer using coupled inductors to improve isolation
CN116346069B (en) Filter and electronic device
US20210119603A1 (en) Wide bandwidth time division duplex transceiver
US20230188115A1 (en) Bulk acoustic wave filters for improving noise factor
CN112187210B (en) Filter packaging structure, multiplexer and communication equipment
US11901877B2 (en) Transversely-excited film bulk acoustic resonator matrix filters with noncontiguous passband
CN115882819A (en) Duplexer device, multiplexer, and communication apparatus
JP2022173148A (en) Transversely excited film bulk acoustic resonator matrix filters with input and output impedances matched to radio frequency front end elements

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20913504

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20913504

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205 DATED 07.02.2023)

122 Ep: pct application non-entry in european phase

Ref document number: 20913504

Country of ref document: EP

Kind code of ref document: A1