WO2021143518A1 - Bulk acoustic wave duplex filter - Google Patents
Bulk acoustic wave duplex filter Download PDFInfo
- Publication number
- WO2021143518A1 WO2021143518A1 PCT/CN2020/140938 CN2020140938W WO2021143518A1 WO 2021143518 A1 WO2021143518 A1 WO 2021143518A1 CN 2020140938 W CN2020140938 W CN 2020140938W WO 2021143518 A1 WO2021143518 A1 WO 2021143518A1
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- WIPO (PCT)
- Prior art keywords
- filter
- metal plate
- acoustic wave
- bulk acoustic
- metal
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
Definitions
- the present invention relates to the field of communication technology, in particular to a bulk acoustic wave duplex filter.
- the volume of the bulk acoustic wave resonator and the filter composed of it is greatly reduced compared with the traditional electromagnetic filter.
- the crystal orientation growth of the piezoelectric crystal can be well controlled at present, the loss of the resonator is extremely small, the quality factor is high, and it can cope with complex design requirements such as steep transition band and low insertion loss. Due to the small size, high roll-off, and low insertion loss of the BAW filter, the filter with this as the core has been widely used in communication systems.
- frequency selective devices such as filters and duplexers in the RF front-end are required to suppress adjacent frequency bands at a higher level.
- FBAR devices also need to be improved and improved in this regard. To improve, it is necessary to improve the level of temporary band suppression and isolation without having a greater impact on the insertion loss, and at the same time not to increase the overall size of the chip or device as much as possible.
- the common method is to add an inductance with a large inductance on the parallel branch to change the resonant frequency of the resonator to increase the temporary band suppression, or to add additional capacitance or inductance to one or several resonators to increase the suppression point to improve the performance.
- these methods require the addition of additional reactive components, and the values of these components are usually relatively large, which is very difficult to implement on the chip. If it is realized by winding wires on the substrate or adding discrete components outside the chip, the number and size of the substrate will inevitably increase, which will inevitably lead to an increase in the overall size of the filter or duplexer. Moreover, the added windings or discrete components are not ideal in practice, and the losses introduced by them will be superimposed on the filter, resulting in the deterioration of the overall insertion loss of the filter.
- the above method will lead to an increase in chip loss and a substantial increase in the overall size of the chip while improving the immediate band suppression and isolation. Therefore, without increasing the overall size of the chip, how to improve the short-band suppression and transmission and reception isolation of the duplexer while increasing the power capacity of the duplexer is still a technical problem to be solved.
- the bulk acoustic wave duplex filter provided by the present invention can block the spatial coupling between the transmitting filter and the receiving filter through the metal cover, thereby improving the relationship between the receiving channel and the transmitting channel.
- a bulk acoustic wave duplex filter is provided.
- a bulk acoustic wave duplex filter provided by the present invention includes a substrate, a plastic package and a metal cover, wherein:
- a transmitting filter and a receiving filter are arranged on the substrate at intervals;
- the plastic package covers the substrate and the transmitting filter and receiving filter
- the metal cover is arranged on the top of the plastic package body and is embedded in the plastic package body.
- the metal cover includes a first metal plate and at least one second metal plate disposed at the bottom of the first metal plate.
- the second metal plate is vertically arranged at the bottom of the first metal plate, and the second metal plate is embedded in the plastic package.
- the metal cover includes one of the first metal plate and one of the second metal plate, the second metal plate is connected to the center of the bottom of the first metal plate, and the first metal plate A T-shaped metal cover is formed with the second metal plate.
- the transmitting filter and the receiving filter are respectively located on both sides of the second metal plate.
- the metal cover includes one first metal plate and three second metal plates, and both ends and the center of the bottom of the first metal plate are connected with the second metal plates, And the first metal plate and the second metal plate form an inverted mountain-shaped metal cover.
- two adjacent second metal plates and the first metal plate form an accommodating space, and the transmitting filter and the receiving filter are respectively located in the adjacent accommodating spaces.
- the first metal plate is located directly above the transmitting filter and the receiving filter, and the distance between the first metal plate and the transmitting filter and the receiving filter is greater than 100 ⁇ m.
- the distance between the transmitting filter and the receiving filter is greater than 150 ⁇ m.
- the spatial coupling between the transmitting filter and the receiving filter can be blocked by the metal cover, thereby improving the isolation and mutual inhibition between the receiving channel and the transmitting channel, and It does not cause an increase in passband insertion loss, a large increase in the overall size of the chip and an increase in the complexity of the manufacturing process, and at the same time, the introduction of the metal cover can also improve the heat dissipation path and increase the power capacity.
- FIG. 1 is a schematic diagram of the structure of a bulk acoustic wave duplex filter in the prior art
- FIG. 2 is a schematic diagram of a structure of a bulk acoustic wave duplex filter according to an embodiment of the present invention
- Fig. 3 is another structural schematic diagram of a bulk acoustic wave duplex filter according to an embodiment of the present invention.
- Figure 4 is a comparison diagram of the isolation curves of Figure 1 and Figure 2;
- Fig. 5 is a comparison diagram of the transmission characteristic curves of Fig. 1 and Fig. 2.
- FIG. 1 is a bulk acoustic wave duplex filter in the prior art.
- the transmitting filter 3 works, the electromagnetic waves radiated from it will enter the receiving filter 4 through spatial coupling, which will affect the normal operation of the receiving filter 4.
- the spatial coupling between the filter 3 and the receiving filter 4 can be equivalent to a capacitor, and this capacitor will inevitably affect the isolation between the receiving and sending channels, thereby causing deterioration of the isolation and mutual suppression between the receiving channel and the transmitting channel.
- FIG. 2 is a structural diagram of a bulk acoustic wave duplex filter according to an embodiment of the present invention.
- the filter includes a substrate 1, a plastic package 2 and a metal cover, wherein,
- the substrate 1 is provided with a transmitting filter 3 and a receiving filter 4 at intervals;
- the plastic package 2 covers the substrate 1 and the transmitting filter 3 and the receiving filter 4;
- the metal cover is set on the top of the plastic package 2 and is embedded in the plastic package 2 Inside.
- the relationship between the receiving channel and the transmitting channel is improved. Isolation and mutual inhibition, and will neither increase the passband insertion loss, nor cause a significant increase in the overall size of the chip and increase in the complexity of the manufacturing process.
- the introduction of the metal cover can also improve the heat dissipation path. Improve power capacity.
- the emission filter 3 is a bulk acoustic wave emission filter, and the emission filter 3 includes an emission filter chip, and the emission filter chip is connected to the substrate 1 through solder balls 5 in a flip-chip form.
- the receiving filter 4 is a bulk acoustic wave receiving filter, and the receiving filter 4 includes a receiving filter chip, and the receiving filter chip is connected to the substrate 1 through solder balls 5 in a flip-chip form.
- the material of the substrate 1 can be organic materials or ceramics.
- the substrate 1 can carry the transmitting filter chip and the receiving filter chip.
- the substrate 1 can also be provided with a metal layer for electrical connection.
- the plastic package 2 is generally made of epoxy resin.
- the transmitting filter 3 and the receiving filter 4 can be plastically sealed to protect the transmitting filter chip and the receiving filter chip from damage by external forces. At the same time, it can also isolate moisture from the environment. The change affects the performance of the transmitting filter 3 and the receiving filter 4.
- the substrate 1 may completely cover the top of the plastic package 2 or partly cover the top of the plastic package 2.
- the metal cover may include a first metal plate 71 and at least one second metal plate 72 disposed at the bottom of the first metal plate 71.
- the number of the second metal plates 72 may be one or more. The number of the second metal plates 72 can be set according to actual needs.
- the second metal plate 72 may be vertically arranged at the bottom of the first metal plate 71, and the second metal plate 72 is embedded in the plastic package body 2.
- the bottom of the first metal plate 71 is connected to the top of the second metal plate 72.
- the bottom of the second metal plate 72 may be in contact with the substrate 1 or may be located above the substrate 1.
- the metal cover includes a first metal plate 71 and a second metal plate 72 (the first metal plate 71 and the second metal plate 72 are perpendicular to each other).
- a second metal plate 72 is connected to the center of the bottom of the 71, and the first metal plate 71 and the second metal plate 72 form a T-shaped metal cover.
- the transmitting filter 3 and the receiving filter 4 are respectively located on both sides of the second metal plate 72.
- the first metal plate 71 and the second metal plate 72 separate the transmitting filter 3 and the receiving filter 4, which can prevent the spatial coupling between the transmitting filter 3 and the receiving filter 4, so that the transmitting filter 3 and the receiving filter The devices 4 will not affect each other.
- the metal cover includes a first metal plate 71 and three second metal plates 72.
- the two ends and the center of the first metal plate 71 are connected with the second metal plate 71.
- the metal plate 72, and the first metal plate 71 and the second metal plate 72 form an inverted mountain-shaped metal cover.
- the three second metal plates 72 are arranged in parallel and at equal intervals, wherein one second metal plate 72 is located in the middle of the first metal plate 71, and the second metal plate 72 separates the transmitting filter 3 from the receiving filter 4;
- the two second metal plates 72 are respectively located at both ends of the first metal plate 71.
- the two adjacent second metal plates 72 and the first metal plate 71 form an accommodating space, and the transmitting filter 3 and the receiving filter 4 are respectively located in the adjacent accommodating spaces. Since the transmitting filter 3 and the receiving filter 4 are respectively located in different accommodation spaces, the spatial coupling between the transmitting filter 3 and the receiving filter 4 can be effectively prevented, thereby making the transmitting filter 3 and the receiving filter 4 Will not affect each other.
- the first metal plate 71 may be located directly above the transmitting filter 3 and the receiving filter 4, and the distance between the first metal plate 71 and the transmitting filter 3 and the receiving filter 4 is greater than 100 ⁇ m .
- the distance between the transmitting filter 3 and the receiving filter 4 may be greater than 150 ⁇ m.
- the bulk acoustic wave duplex filter shown in FIG. 1 and the bulk acoustic wave duplex filter shown in FIG. 2 of the embodiment of the present invention are used in the prior art. In comparison, the following results are obtained.
- Fig. 4 is a comparison diagram of isolation curves, the solid line is the isolation curve corresponding to Fig. 1, and the dashed line is the isolation curve corresponding to Fig. 2 of the present invention. It can be clearly seen that the isolation of the dotted line is obviously better than the solid line in the two frequency ranges of 880MHz to 915MHz and 925MHz to 960MHz of interest. Therefore, it can be explained that the bulk acoustic wave duplex filter in the embodiment of the present application can help improve isolation.
- Fig. 5 is a comparison diagram of transmission characteristic curves, the solid line is the curve corresponding to Fig. 1, and the dashed line is the curve corresponding to Fig. 2 of the present invention. It can be seen that the mutual suppression of the dotted lines in the two frequency bands of 880MHz ⁇ 915MHz and 925MHz ⁇ 960MHz has also been improved.
- the thermal conductivity of metal is much higher than that of epoxy resin, for example, the thermal conductivity of copper is 401W/mk and epoxy resin is 0.3W/mk. Therefore, the bulk acoustic wave duplex filter provided by this application can greatly improve the heat dissipation effect. Therefore, the power capacity has also been greatly improved.
- the bulk acoustic wave duplex filter provided by the present invention can not only improve the isolation of the duplexer, but also improve the heat dissipation, without increasing the size and complexity of the transceiver filter.
- the purpose of the power capacity of the duplexer is not only improve the isolation of the duplexer, but also improve the heat dissipation, without increasing the size and complexity of the transceiver filter. The purpose of the power capacity of the duplexer.
Abstract
Description
Claims (10)
- 一种体声波双工滤波器,其特征在于,包括基板、塑封体以及金属盖,其中,A bulk acoustic wave duplex filter, which is characterized by comprising a substrate, a plastic package and a metal cover, wherein:所述基板上间隔地设置有发射滤波器和接收滤波器;A transmitting filter and a receiving filter are arranged on the substrate at intervals;所述塑封体包覆所述基板以及所述发射滤波器和接收滤波器;The plastic package covers the substrate and the transmitting filter and receiving filter;所述金属盖设置于所述塑封体的顶部,且嵌入所述塑封体内。The metal cover is arranged on the top of the plastic package body and is embedded in the plastic package body.
- 根据权利要求1所述体声波双工滤波器,其特征在于,所述金属盖包括第一金属板以及设置于所述第一金属板底部的至少一个第二金属板。The bulk acoustic wave duplex filter according to claim 1, wherein the metal cover comprises a first metal plate and at least one second metal plate disposed at the bottom of the first metal plate.
- 根据权利要求2所述体声波双工滤波器,其特征在于,所述第二金属板垂直设置于所述第一金属板的底部,所述第二金属板嵌入所述塑封体内。3. The bulk acoustic wave duplex filter according to claim 2, wherein the second metal plate is vertically arranged at the bottom of the first metal plate, and the second metal plate is embedded in the plastic package.
- 根据权利要求3所述体声波双工滤波器,其特征在于,所述金属盖包括一个所述第一金属板以及一个所述第二金属板,所述第一金属板的底部中心连接有所述第二金属板,且所述第一金属板与所述第二金属板形成T型金属盖。The bulk acoustic wave duplex filter according to claim 3, wherein the metal cover comprises one of the first metal plate and one of the second metal plate, and the bottom center of the first metal plate is connected with The second metal plate, and the first metal plate and the second metal plate form a T-shaped metal cover.
- 根据权利要求4所述体声波双工滤波器,其特征在于,所述发射滤波器与所述接收滤波器分别位于所述第二金属板的两侧。The bulk acoustic wave duplex filter according to claim 4, wherein the transmitting filter and the receiving filter are respectively located on both sides of the second metal plate.
- 根据权利要求3所述体声波双工滤波器,其特征在于,所述金属盖包括一个所述第一金属板以及三个所述第二金属板,所述第一金属板底部上的两端以及中心处均连接有所述第二金属板,且所述第一金属板与所述第二金属板形成倒山字型金属盖。The bulk acoustic wave duplex filter according to claim 3, wherein the metal cover comprises one of the first metal plate and three of the second metal plates, and both ends on the bottom of the first metal plate And the center is connected with the second metal plate, and the first metal plate and the second metal plate form an inverted mountain-shaped metal cover.
- 根据权利要求6所述体声波双工滤波器,其特征在于,相邻两 个所述第二金属板与所述第一金属板形成一个容纳空间,所述发射滤波器与所述接收滤波器分别位于相邻的容纳空间内。The bulk acoustic wave duplex filter according to claim 6, wherein two adjacent second metal plates and the first metal plate form an accommodation space, and the transmitting filter and the receiving filter They are respectively located in adjacent accommodation spaces.
- 根据权利要求1所述体声波双工滤波器,其特征在于,所述第一金属板位于所述发射滤波器以及所述接收滤波器的正上方,且所述第一金属板与所述发射滤波器以及所述接收滤波器之间的距离大于100μm。The bulk acoustic wave duplex filter according to claim 1, wherein the first metal plate is located directly above the transmitting filter and the receiving filter, and the first metal plate and the transmitting filter The distance between the filter and the receiving filter is greater than 100 μm.
- 根据权利要求1所述体声波双工滤波器,其特征在于,所述发射滤波器与所述接收滤波器之间的距离大于150μm。The bulk acoustic wave duplex filter according to claim 1, wherein the distance between the transmitting filter and the receiving filter is greater than 150 μm.
- 根据权利要求1所述体声波双工滤波器,其特征在于,所述基板由有机材料制成;所述封装体由环氧树脂制成。The bulk acoustic wave duplex filter according to claim 1, wherein the substrate is made of organic material; and the package body is made of epoxy resin.
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CN111162755B (en) * | 2020-01-16 | 2021-09-21 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave duplex filter |
CN112422101B (en) * | 2021-01-21 | 2021-04-30 | 中芯集成电路制造(绍兴)有限公司 | Electronic device and forming method thereof |
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