WO2021137594A1 - Procédé de formation d'un film de matériau à l'aide d'un matériau de protection de surface - Google Patents

Procédé de formation d'un film de matériau à l'aide d'un matériau de protection de surface Download PDF

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Publication number
WO2021137594A1
WO2021137594A1 PCT/KR2020/019330 KR2020019330W WO2021137594A1 WO 2021137594 A1 WO2021137594 A1 WO 2021137594A1 KR 2020019330 W KR2020019330 W KR 2020019330W WO 2021137594 A1 WO2021137594 A1 WO 2021137594A1
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surface protection
protection material
adsorbed
chamber
material film
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PCT/KR2020/019330
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English (en)
Korean (ko)
Inventor
이근수
김재민
김하나
최웅진
Original Assignee
주식회사 유진테크 머티리얼즈
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Publication of WO2021137594A1 publication Critical patent/WO2021137594A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Definitions

  • the present invention relates to a method for forming a material film, and more particularly, to a method for forming a material film using a surface protection material.
  • TiN titanium nitride film
  • a deposition process is an important process for depositing materials on a substrate, and as the appearance of electronic devices continues to shrink and the density of equipment increases, the aspect ratio of features increases. Therefore, processes with good step coverage are attracting attention, particularly atomic layer deposition (ALD).
  • ALD atomic layer deposition
  • the metal thin film of the next-generation electronic device has to implement excellent step coverage in a device structure with a high step ratio, most of the upper and lower electrode processes are also changing to ALD.
  • reaction gases are sequentially supplied to a process chamber loaded with a substrate, and a first reaction gas is supplied to the process chamber and adsorbed on the surface of the substrate.
  • the second reaction gas is supplied to the process chamber and reacts with the material adsorbed through the first reaction gas to form a deposition material.
  • a method for forming a material film using a surface protection material includes supplying a precursor into a chamber in which a substrate is placed and adsorbing the precursor to the substrate; purging the interior of the chamber; and supplying a reactant to the inside of the chamber to react with the adsorbed precursor and forming a material film to form a material film, wherein the method includes supplying the surface protection material to the substrate before forming the material film. Supplying a surface protection material adsorbed to the; and purging the inside of the chamber.
  • the surface protection material may be represented by the following ⁇ Formula 1>.
  • Each R is independently selected from an alkyl group having 1 to 5 carbon atoms or hydrogen.
  • the surface protection material may be represented by the following ⁇ Formula 2>.
  • the precursor supply step, the material film forming step, and the surface protection material supply step may be performed at 50 to 700°C, respectively.
  • the supplying of the surface protection material may be performed before and/or after the supplying of the precursor.
  • the reactant may be one or more of ammonia (NH3), hydrazine (N2H4), nitrogen dioxide (NO2), and nitrogen (N2).
  • the metal precursor may be a compound containing Ti.
  • the present invention it is possible to form a material film having a higher purity without impurities and thinner than the thickness of one monolayer obtainable by the conventional ALD process, and it is easy to control the thickness of the material film and control the step coverage. As well as possible, it is possible to improve the electrical properties and reliability of the device.
  • the surface protection material has a behavior similar to that of the metal precursor during the process, so it is adsorbed at a high density on the upper part (or on the inlet side) in a trench structure with a high aspect ratio (for example, 40:1 or more) and on the lower part (or on the inner side). It is adsorbed at a low density and prevents adsorption of metal precursors in subsequent processes. Therefore, the metal precursor can be adsorbed uniformly in the trench.
  • FIG. 1 is a flowchart schematically illustrating a method for forming a material film according to an embodiment of the present invention.
  • FIGS. 1 and 2 Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. These examples are provided to explain the present invention in more detail to those of ordinary skill in the art to which the present invention pertains. Accordingly, the shape of each element shown in the drawings may be exaggerated to emphasize a clearer description.
  • the thin film becomes thicker at the top (or at the inlet side) and thin at the bottom (or inside). There is a problem of poor step coverage due to non-uniformity.
  • the CVD method using TiCl4 and NH3 gas has a high deposition temperature, and Cl is introduced into the film, so that the film quality is not dense, which causes corrosion.
  • the surface protection material described below behaves the same as the metal precursor, and prevents the metal precursor, which is a subsequent process, from being adsorbed in a state where it is adsorbed at a higher density on the upper portion than the lower portion of the trench, thereby forming a thin film of uniform thickness in the trench to be able to form
  • the substrate is loaded into the process chamber, and the following ALD process conditions are adjusted.
  • the ALD process conditions may include a temperature of a substrate or a process chamber, a chamber pressure, and a gas flow rate, and the temperature is 50 to 700°C.
  • the substrate is exposed to the surface protection material supplied to the inside of the chamber, and the surface protection material is adsorbed to the surface of the substrate.
  • the surface protection material has a behavior similar to that of the metal precursor during the process, so that in a trench structure with a high aspect ratio (for example, 40:1 or more), it is adsorbed at a high density on the upper side (or on the inlet side) and on the lower side (or on the inner side). It is adsorbed at a low density and prevents adsorption of metal precursors in subsequent processes.
  • the surface protection material may be represented by the following ⁇ Formula 1>.
  • Each R is independently selected from an alkyl group having 1 to 5 carbon atoms or hydrogen.
  • ⁇ Formula 1> may be represented by the following ⁇ Formula 2>.
  • the above-described surface protection material is more densely adsorbed from the upper portion of the trench than the lower portion, and the metal precursor cannot be adsorbed at the position where the surface protection material is adsorbed. That is, the conventional metal precursor was densely adsorbed from the upper portion of the trench to show a higher density than the lower portion, but as in this embodiment, the surface protection material is densely adsorbed from the upper portion of the trench to prevent the metal precursor from adsorption, so the metal precursor may be uniformly adsorbed to the upper/lower portions of the trench without being over-adsorbed to the upper portion of the trench, and may improve the step coverage of a material layer, which will be described later.
  • a purge gas eg, an inert gas such as Ar
  • an inert gas such as Ar
  • the metal precursor may be a compound containing Ti.
  • the above-described surface protection material is more densely adsorbed from the upper portion of the trench than the lower portion, and the metal precursor cannot be adsorbed at the position where the surface protection material is adsorbed. That is, the conventional metal precursor was densely adsorbed from the upper portion of the trench to show a higher density than the lower portion, but as in this embodiment, the surface protection material is densely adsorbed from the upper portion of the trench to prevent the metal precursor from adsorption, so the metal precursor may be uniformly adsorbed to the upper/lower portions of the trench without being over-adsorbed to the upper portion of the trench, and may improve the step coverage of a material layer, which will be described later.
  • a purge gas eg, an inert gas such as Ar
  • an inert gas such as Ar
  • the reaction material reacts with the metal precursor layer to form a material film, and the reaction material may be one or more of ammonia (NH3), hydrazine (Hydrazine, N2H4), nitrogen dioxide (NO2), and nitrogen (N2), and a metal nitride film through the reaction material can be formed.
  • a purge gas eg, an inert gas such as Ar
  • an inert gas such as Ar
  • the surface protection material is supplied before the metal precursor, otherwise, the surface protection material may be supplied after the metal precursor or both before and after the metal precursor.
  • a titanium nitride film was formed on the silicon substrate without using the surface protection material described above.
  • a titanium nitride film was formed through an ALD process, the ALD process temperature was 400 to 480°C, and NH3 gas was used as a reaction material.
  • the titanium nitride film formation process through the ALD process is as follows, and the following process was performed as one cycle.
  • the titanium precursor TiCl4 (Titanium Tetrachloride) is supplied to the reaction chamber at room temperature and the titanium precursor is adsorbed on the substrate
  • a titanium nitride film was formed on a silicon substrate by using the above ⁇ Formula 2> as a surface protection material.
  • a titanium nitride film was formed through an ALD process, the ALD process temperature was 400 to 480°C, and NH3 gas was used as a reaction material.
  • the titanium nitride film formation process through the ALD process is as follows, and the following process was performed as one cycle (refer to FIG. 1 ).
  • the titanium precursor TiCl4 (Titanium Tetrachloride) is supplied to the reaction chamber at room temperature and the titanium precursor is adsorbed on the substrate.
  • FIG. 2 is a graph showing DSC (Differential Scanning Calorimetry) of the surface protection material according to ⁇ Formula 2>. It can be seen that the decomposition peak (upward) of the surface protection material is not detected up to 500° C., so it is not decomposed even when used at a high temperature and has a surface protection effect.
  • DSC Different Scanning Calorimetry
  • a comparison of the step coverage of the titanium nitride film according to the comparative example and the embodiment of the present invention is as follows, and in the case of the embodiment, it can be seen that the step coverage is significantly improved compared to the comparative example.
  • the surface protection material has a behavior similar to that of the metal precursor during the process, so that in a trench structure with a high aspect ratio (for example, 40:1 or more), it is adsorbed at a high density on the top (or inlet side) and at the bottom (or inside side) at a low density, and prevents the metal precursor from being adsorbed in the subsequent process. Therefore, the metal precursor can be adsorbed uniformly in the trench.
  • a high aspect ratio for example, 40:1 or more
  • the present invention can be applied to various types of semiconductor manufacturing methods.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Un procédé de formation d'un film de matériau à l'aide d'un matériau de protection de surface, selon un mode de réalisation de la présente invention, comprend : une étape d'alimentation en précurseur consistant à fournir un précurseur dans une chambre dans laquelle un substrat est placé, de sorte que le précurseur soit adsorbé sur le substrat ; une étape de purge de l'intérieur de la chambre ; et une étape de formation d'un film de matériau consistant à introduire un matériau réactif dans la chambre, de manière à faire réagir celui-ci avec le précurseur adsorbé et à former un film de matériau, le procédé comprenant en outre, avant l'étape de formation d'un film de matériau, une étape d'alimentation en matériau de protection de surface consistant à fournir un matériau de protection de surface de telle sorte que celui-ci est adsorbé sur le substrat, et une étape de purge de l'intérieur de la chambre.
PCT/KR2020/019330 2020-01-03 2020-12-29 Procédé de formation d'un film de matériau à l'aide d'un matériau de protection de surface WO2021137594A1 (fr)

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KR10-2020-0000983 2020-01-03
KR1020200000983A KR20210087808A (ko) 2020-01-03 2020-01-03 표면 보호 물질을 이용한 물질막 형성 방법

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Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2004083783A (ja) * 2002-08-28 2004-03-18 Dainippon Ink & Chem Inc エポキシ樹脂組成物、その成形硬化物、半導体封止材料および電子回路基板用樹脂組成物
KR20050064243A (ko) * 2003-12-23 2005-06-29 주식회사 하이닉스반도체 촉매에 의한 원자층 증착 방식을 이용한 ｔｉ막 형성 방법
KR100555543B1 (ko) * 2003-06-24 2006-03-03 삼성전자주식회사 원자층 증착법에 의한 고유전막 형성 방법 및 그고유전막을 갖는 커패시터의 제조 방법
KR20130103743A (ko) * 2010-09-10 2013-09-24 어플라이드 머티어리얼스, 인코포레이티드 실리콘 산화물의 원자층 증착을 위한 삽입형 촉매
JP2015174967A (ja) * 2014-03-17 2015-10-05 旭化成イーマテリアルズ株式会社 熱硬化性樹脂組成物

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7229405B2 (en) 2002-11-15 2007-06-12 Paracor Medical, Inc. Cardiac harness delivery device and method of use

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004083783A (ja) * 2002-08-28 2004-03-18 Dainippon Ink & Chem Inc エポキシ樹脂組成物、その成形硬化物、半導体封止材料および電子回路基板用樹脂組成物
KR100555543B1 (ko) * 2003-06-24 2006-03-03 삼성전자주식회사 원자층 증착법에 의한 고유전막 형성 방법 및 그고유전막을 갖는 커패시터의 제조 방법
KR20050064243A (ko) * 2003-12-23 2005-06-29 주식회사 하이닉스반도체 촉매에 의한 원자층 증착 방식을 이용한 ｔｉ막 형성 방법
KR20130103743A (ko) * 2010-09-10 2013-09-24 어플라이드 머티어리얼스, 인코포레이티드 실리콘 산화물의 원자층 증착을 위한 삽입형 촉매
JP2015174967A (ja) * 2014-03-17 2015-10-05 旭化成イーマテリアルズ株式会社 熱硬化性樹脂組成物

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