WO2021120242A1 - 一种兼容apt和et模式的5g射频前端电源切换芯片 - Google Patents
一种兼容apt和et模式的5g射频前端电源切换芯片 Download PDFInfo
- Publication number
- WO2021120242A1 WO2021120242A1 PCT/CN2019/127951 CN2019127951W WO2021120242A1 WO 2021120242 A1 WO2021120242 A1 WO 2021120242A1 CN 2019127951 W CN2019127951 W CN 2019127951W WO 2021120242 A1 WO2021120242 A1 WO 2021120242A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- switch
- terminal
- power supply
- apt
- power
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 claims description 35
- 230000003446 memory effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/303—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters using a switching device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
Definitions
- the present invention relates to the field of power supplies, in particular to a 5G radio frequency front-end power switch chip compatible with APT and ET modes.
- the radio frequency power amplifier is an important part of the radio frequency front end.
- the radio frequency power amplifier can enable the electronic terminal to obtain a higher radio frequency output power.
- the power consumption of the RF power amplifier can be reduced by adjusting the voltage of the power amplifier in real time to adapt to changes in the power of the RF amplifier.
- the two most commonly used voltage management systems in the industry are Average Power Tracking (APT) technology and Envelope Tracking (ET) technology, both of which can track the power changes of the RF power amplifier and adjust the power amplifier in real time. The voltage, thereby improving work efficiency.
- the key performance goal of the fifth-generation mobile communication technology (5G) is to greatly increase the transmission rate compared to 4G, which means the expansion of the spectrum bandwidth, which puts forward more stringent requirements for the design of 5G radio frequency amplifiers.
- the memory effect of the power amplifier is relatively weak, and it is often not considered when analyzing the nonlinear characteristics of the power amplifier.
- the memory effect of the amplifier tends to be significant and cannot be ignored.
- One of the important sources of the memory effect of the amplifier is that the power supply voltage of the PA cannot be kept constant, but is related to the state of the previous time. The memory effect begins to appear, and the wider the bandwidth, the more obvious.
- a decoupling capacitor with a larger capacitance value needs to be loaded on the power supply voltage to filter out the jitter of the power supply voltage, thereby weakening the memory effect on the linearity of the PA.
- the linearity of the PA is guaranteed by the shaping function or Digital Pre-Distortion (DPD) technology, but the envelope tracker module (Envelop tracker) has a greater impact on the capacitive load on the PA side. Demanding requirements.
- DPD Digital Pre-Distortion
- the purpose of the present invention here is to provide a 5G RF front-end power switch chip compatible with APT and ET modes that is compatible with the two most commonly used power management systems in 5G RF power amplifiers.
- the 5G RF front-end power switch chip compatible with APT and ET modes includes the following two structures:
- the first 5G RF front-end power switch chip compatible with APT and ET modes includes a first switch M1, a second switch M2, and a third switch M3.
- the first switch M1, the second switch M2, and the third switch M3 includes a high power supply terminal, a low power supply terminal, and a control terminal; the control terminal of the third switch M3 and the control terminal of the first switch M1 are respectively used to load a control voltage, and the high power supply terminal of the third switch M3 Connected to the control terminal of the second switch M2, the low power terminal of the third switch M3 is grounded; the high power terminal of the second switch M2 is used for power loading, and the low power terminal of the second switch M2 is connected to the The high power terminal of the first switch M1 is used as an output terminal; the low power terminal of the first switch M1 is grounded.
- the second 5G RF front-end power switch chip compatible with APT and ET modes includes a drive circuit, a switch M4 and a resistor R4.
- the switch M4 includes a high power supply terminal, a low power supply terminal and a control terminal. The input terminal of the drive circuit is loaded and controlled. The output terminal is connected to the control terminal of the switch M4, the high power terminal of the switch M4 is used as the output terminal, and the low power terminal of the switch M4 is grounded; the resistor R4 is connected in series with the high power terminal of the switch M4 and Between the low power terminals.
- the power switching chip provided by the present invention can switch to a larger decoupling capacitor under the APT mechanism; under the ET working mechanism, the switch is configured to suspend the APT decoupling capacitor to reduce The capacitive load of the small envelope tracker, at this time, the capacitive load of the envelope tracker module is only the ET capacitor; the compatibility of the most commonly used APT power mode and ET power mode in 5G RF power amplifiers is realized.
- FIG. 1 is a circuit schematic diagram of a power switching chip provided by Embodiment 1 of the present invention.
- FIG. 2 is a schematic circuit diagram of a power switching chip provided in the second embodiment of the present invention.
- 3 to 4 are circuit schematic diagrams of the power switching chip provided by the third embodiment of the present invention.
- FIG. 9 is a circuit schematic diagram of a power switching chip provided by Embodiment 5 of the present invention.
- the 5G RF front-end power switch chip compatible with APT and ET modes provided in this embodiment includes a first switch M1, a second switch M2, and a third switch M3.
- the first switch M1, the second switch M2, and the third switch M3 respectively include high The power terminal, the low power terminal and the control terminal; as shown in Figure 1, the connection relationship between the switches is: the control terminal of the third switch M3 and the control terminal of the first switch M1 are respectively used to load the control voltage APT_Enable, and the third The high power terminal of the switch M3 is connected to the control terminal of the second switch M2, and the low power terminal of the third switch M3 is grounded; the high power terminal of the second switch M2 is used for power loading, and the low power terminal of the second switch M2 is connected to the first switch The high power terminal of M1 is used as an output terminal to connect to the lower-level circuit; the low power terminal of the first switch M1 is grounded.
- the 5G RF front-end power switch chip compatible with APT and ET modes provided in this embodiment includes all the technical features in the first embodiment, and also includes a resistor R1 and a capacitor C1. As shown in Fig. 2, the control power source loaded on the control terminal of the first switch M1 is grounded via the resistor R1 and the capacitor C1.
- the resistor R1 and the capacitor C1 ensure the stability of the voltage loaded on the control terminal of the first switch M1 and reduce the influence of voltage fluctuations.
- the 5G RF front-end power switch chip compatible with APT and ET modes provided in this embodiment includes all the technical features in the first and second embodiments, and also includes the serial connection between the high power terminal and the control terminal of the second switch M1
- the resistance R2 is shown in Figure 3 and Figure 4 respectively.
- the 5G RF front-end power switch chip compatible with APT and ET modes provided in this embodiment includes all the technical features in Embodiment 1, Embodiment 2, and Embodiment 3. It also includes a capacitor C2, which is loaded on the control terminal of the third switch M3 The control power supply is grounded via capacitor C2, as shown in Figure 5, Figure 6, Figure 7, and Figure 8 respectively.
- the 5G RF front-end power switch chip compatible with APT and ET modes provided by this embodiment includes a drive circuit 1, a switch M4, and a resistor R4.
- the switch M4 includes a high power terminal, a low power terminal, and a control terminal; as shown in Figure 9, the specific circuit The connection relationship is: the input terminal of the drive circuit 1 is loaded with the control voltage APT_Enable, the output terminal is connected to the control terminal of the switch M4; the high power terminal of the switch M4 is used as the output terminal, and the low power terminal of the switch M4 is grounded; the resistor R4 is connected in series with the high of the switch M4 Between the power terminal and the low power terminal.
- the driving circuit 1 described in this embodiment can adopt any kind of circuit, such as an amplifier.
- the capacitor C3 and the capacitor C4 are connected externally, the capacitor C3 is a 5GPAT capacitor, and the capacitor C4 is an ET capacitor.
- the working modes include APT working mode and ET working mode.
- the working voltage is applied to the high power terminal of the second switch M2 through the power management chip, and the control voltage APT_Enable is applied to the control terminal of the first switch M1 and the third switch M3.
- the APT_Enable voltage is set to high, it is the APT working mode, the first switch M1 and the third switch M3 are turned on, the node 1 and node 2 are pulled to the low level (ground), and the second switch M2 is turned off ,
- the 5G APT capacitor becomes the decoupling capacitor of the PA voltage supply, filtering the power supply voltage ripple, helping to eliminate the memory effect of the 5G power amplifier and improve the linearity.
- the APT_Enable voltage is set low, it is the ET operating mode, the first switch M1 and the third switch M3 are turned off, the node 2 is high (power supply voltage Vcc), the second switch M2 is turned on, and the node 1 is pulled high. Level (power supply voltage Vcc). Because there is no pressure difference between the two ends of the 5G APT capacitor plate, it is not used as the load of the envelope tracker. In the ET operating mode, the capacitive load of the envelope tracker is only the ET capacitor.
- the control voltage APT_Enable can be directly loaded on the control terminals of the first switch M1 and the third switch M3, or it can be loaded on the control terminals of the first switch M1 and the third switch M3 through the resistor R3;
- the current is limited to prevent the voltage loaded on the control terminal of the first switch M1 and the third switch M3 from affecting the first switch M1 and the third switch M3.
- the capacitor C3 and the capacitor C4 are externally connected, the capacitor C3 is a 5GPAT capacitor, and the capacitor C4 is an ET capacitor.
- the working mode includes APT working mode and ET working mode. When working, the working voltage is applied to the high power terminal of the switch M4 through the power management chip, and the control voltage APT_Enable is applied to the input terminal of the driving circuit.
- the APT_Enable voltage When the APT_Enable voltage is set high, it is APT working Mode, switch M4 is turned on, node 1 is pulled to low level (ground), the 5G APT capacitor becomes the decoupling capacitor of the PA voltage supply, filtering the power supply voltage ripple, helping to eliminate the memory effect of the 5G power amplifier and improve the linearity .
- the APT_Enable voltage When the APT_Enable voltage is set low, it is the ET operating mode, the switch M4 is turned off, the 5G APT capacitor and the large resistance R1 are connected in series, and the capacitive load of the envelope tracker is mainly composed of the ET capacitor.
- the first switch M1, the second switch M2, the third switch M3, and the switch M4 can be any controllable switch, such as a triode, a field effect transistor, or a silicon controlled rectifier.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (6)
- 一种兼容APT和ET模式的5G射频前端电源切换芯片,其特征在于:该芯片包括第一开关M1、第二开关M2和第三开关M3,所述第一开关M1、所述第二开关M2和所述第三开关M3分别包括高电源端、低电源端和控制端;所述第三开关M3的控制端和所述第一开关M1的控制端分别用于加载控制电压,所述第三开关M3的高电源端接所述第二开关M2的控制端,所述第三开关M3的低电源端接地;所述第二开关M2的高电源端用于电源加载,所述第二开关M2的低电源端接所述第一开关M1的高电源端,并作为输出端;所述第一开关M1的低电源端接地。
- 根据权利要求1所述的兼容APT和ET模式的5G射频前端电源切换芯片,其特征在于:还包括电阻R1和电容C1,加载于所述第一开关M1控制端上的控制电源经所述电阻R1和所述电容C1接地。
- 根据权利要求1-2任意一项所述的兼容APT和ET模式的5G射频前端电源切换芯片,其特征在于:还包括串联于所述第二开关M1的高电源端和控制端之间的电阻R2。
- 根据权利要求1-2所述的兼容APT和ET模式的5G射频前端电源切换芯片,其特征在于:还包括电容C2,加载于所述第三开关M3控制端上的控制电源经所述电容C2接地。
- 根据权利要求3所述的兼容APT和ET模式的5G射频前端电源切换芯片,其特征在于:还包括电容C2,加载于所述第三开关M3控制端上的控制电源经所述电容C2接地。
- 一种兼容APT和ET模式的5G射频前端电源切换芯片,其特征在于:该切换芯片包括驱动电路、开关M4和电阻R4,所述开关M4包括高电源端、低电源端和控制端,所述驱动电路的输入端加载控制电压,输出端接所述开关M4的控制端,所述开关M4的高电源端作为输出端,所述开关M4的低电源端接地;所述电阻R4串联于所述开关M4的高电源端和低电源端之间。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911302298.0 | 2019-12-17 | ||
CN201911302298.0A CN111106802B (zh) | 2019-12-17 | 2019-12-17 | 一种兼容apt和et模式的5g射频前端电源切换芯片 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2021120242A1 true WO2021120242A1 (zh) | 2021-06-24 |
Family
ID=70422545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2019/127951 WO2021120242A1 (zh) | 2019-12-17 | 2019-12-24 | 一种兼容apt和et模式的5g射频前端电源切换芯片 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN111106802B (zh) |
WO (1) | WO2021120242A1 (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104486845A (zh) * | 2014-12-19 | 2015-04-01 | 北京中科汉天下电子技术有限公司 | 一种多模多频通信系统 |
WO2015148326A1 (en) * | 2014-03-23 | 2015-10-01 | Paragon Communications, Ltd. | Method and apparatus for partial envelope tracking in handheld and wireless computing devices |
US20180367101A1 (en) * | 2017-06-19 | 2018-12-20 | Realtek Semiconductor Corporation | Envelope-tracking power supply modulator |
CN110061709A (zh) * | 2017-12-07 | 2019-07-26 | 株式会社村田制作所 | 发送单元 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9041365B2 (en) * | 2011-12-01 | 2015-05-26 | Rf Micro Devices, Inc. | Multiple mode RF power converter |
US8958762B2 (en) * | 2012-03-08 | 2015-02-17 | Htc Corporation | Apparatus and method for power management |
CN103684271A (zh) * | 2013-11-22 | 2014-03-26 | 小米科技有限责任公司 | 提高射频功率放大器效率的装置和方法 |
US9525384B2 (en) * | 2014-09-02 | 2016-12-20 | Samsung Electronics Co., Ltd | Method and apparatus for supplying power to a radio frequency power amplifier |
US9596110B2 (en) * | 2015-04-02 | 2017-03-14 | Futurewei Technologies, Inc. | Open loop digital PWM envelope tracking system with dynamic boosting |
JP2017005641A (ja) * | 2015-06-16 | 2017-01-05 | 株式会社村田製作所 | 電力増幅モジュール |
CN107425873A (zh) * | 2017-08-31 | 2017-12-01 | 锐石创芯(厦门)科技有限公司 | 射频前端装置及包含其的电子设备 |
US10523120B2 (en) * | 2017-09-07 | 2019-12-31 | Samsung Electronics Co., Ltd. | Supply modulator for power amplifier |
-
2019
- 2019-12-17 CN CN201911302298.0A patent/CN111106802B/zh active Active
- 2019-12-24 WO PCT/CN2019/127951 patent/WO2021120242A1/zh active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015148326A1 (en) * | 2014-03-23 | 2015-10-01 | Paragon Communications, Ltd. | Method and apparatus for partial envelope tracking in handheld and wireless computing devices |
CN104486845A (zh) * | 2014-12-19 | 2015-04-01 | 北京中科汉天下电子技术有限公司 | 一种多模多频通信系统 |
US20180367101A1 (en) * | 2017-06-19 | 2018-12-20 | Realtek Semiconductor Corporation | Envelope-tracking power supply modulator |
CN110061709A (zh) * | 2017-12-07 | 2019-07-26 | 株式会社村田制作所 | 发送单元 |
Non-Patent Citations (1)
Title |
---|
QIN, XIAOHU: "Powering for RF Power Amplifier of the Handheld Device by SuPA", THE WORLD OF POWER SUPPLY, 31 July 2017 (2017-07-31), pages 1 - 13, XP009528550, ISSN: 1561-0349 * |
Also Published As
Publication number | Publication date |
---|---|
CN111106802B (zh) | 2021-03-09 |
CN111106802A (zh) | 2020-05-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7365604B2 (en) | RF amplifier with a bias boosting scheme | |
KR100480496B1 (ko) | 도허티 증폭기를 이용한 신호 증폭 장치 | |
US6492875B2 (en) | Self-boosting circuit for a power amplifier | |
CN103023440B (zh) | 一种提高功率放大器线性度的电路 | |
US6727753B2 (en) | Operational transconductance amplifier for an output buffer | |
CN110311636B (zh) | 应用于包络跟踪电源调制器的高带宽高摆幅线性放大器 | |
US10483925B2 (en) | Circuit module having dual-mode wideband power amplifier architecture | |
JP2006303744A (ja) | 高周波電力増幅装置 | |
US20080111630A1 (en) | Small size power amplifier with amplifiers switched | |
KR20090103935A (ko) | 스위칭 증폭기의 샘플링 주파수 감소 시스템 및 방법 | |
CN114024510A (zh) | 一种基于GaAs HBT工艺的功率放大器偏置电路 | |
TWI535196B (zh) | 放大器及其操作方法 | |
WO2021120242A1 (zh) | 一种兼容apt和et模式的5g射频前端电源切换芯片 | |
CN100550606C (zh) | 具有不同输入/输出共模电压的电路装置 | |
CN211744347U (zh) | 一种兼容apt和et模式的5g射频前端电源切换芯片 | |
KR102221543B1 (ko) | 전력 증폭 회로 | |
WO2023061086A1 (zh) | 功率放大器 | |
CN107222174B (zh) | 一种低损耗自适应偏置电路及无线发射系统 | |
CN104320105A (zh) | 一种混合模式电容倍增器电路 | |
CN114301396A (zh) | 动态偏置控制电路和Doherty功率放大器 | |
US7282995B2 (en) | Variable gain amplifier | |
CN114189215A (zh) | 射频功率放大电路及射频前端模组 | |
JPH10247830A (ja) | 負性アンプ回路 | |
KR101902381B1 (ko) | 클래스-씨 전력 증폭기를 이용한 선형 전력 증폭 회로 | |
TWI683533B (zh) | 放大電路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 19956204 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 19956204 Country of ref document: EP Kind code of ref document: A1 |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 19956204 Country of ref document: EP Kind code of ref document: A1 |
|
32PN | Ep: public notification in the ep bulletin as address of the adressee cannot be established |
Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205 DATED 19.05.2023.) |