WO2021118605A1 - Puce de dispositif fluidique - Google Patents
Puce de dispositif fluidique Download PDFInfo
- Publication number
- WO2021118605A1 WO2021118605A1 PCT/US2019/066387 US2019066387W WO2021118605A1 WO 2021118605 A1 WO2021118605 A1 WO 2021118605A1 US 2019066387 W US2019066387 W US 2019066387W WO 2021118605 A1 WO2021118605 A1 WO 2021118605A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- trench
- device die
- fluidic device
- membrane
- Prior art date
Links
- 239000010410 layer Substances 0.000 claims abstract description 120
- 239000012528 membrane Substances 0.000 claims abstract description 66
- 239000012790 adhesive layer Substances 0.000 claims abstract description 15
- 239000004593 Epoxy Substances 0.000 claims description 23
- 239000011521 glass Substances 0.000 claims description 19
- 239000012530 fluid Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 238000003754 machining Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 239000000853 adhesive Substances 0.000 description 39
- 230000001070 adhesive effect Effects 0.000 description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 5
- 230000002950 deficient Effects 0.000 description 4
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011449 brick Substances 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000005352 borofloat Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000013024 troubleshooting Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
- B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1623—Manufacturing processes bonding and adhesion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
Definitions
- Fluidic devices refer to devices capable of enabling propagation of both electrical signals and fluids. Such fluidic devices may include microfluidic systems that can transport, mix and process fluids in microsystems. In some instances, the fluids may rely on passive action for propagation. In other instances, the fluids may use an external force such as actuators to direct fluid movement. Specifically, the actuators may forcibly eject the fluids external to the devices via multiple nozzles formed in the fluidic devices. Fluidic devices may be formed of multiple material layers using, by way of example, build-up fabrication processes (e.g., photolithography). It is within the layers that the microfluidic components such as actuators and nozzles are formed.
- build-up fabrication processes e.g., photolithography
- FIG.1A illustrates an example of a fluidic device die of the present disclosure.
- FIG.1B illustrates a top perspective view of the example fluidic device die of FIG.1A.
- FIG.1C is a plan view of a front surface of the example fluidic device die of FIG.1B.
- FIG.1D illustrates an example of the fluidic channels of FIG.1B capped by an example membrane layer.
- FIG.1E is a top plan view of an example trench of the example fluidic device die 104 of FIG.1B.
- FIG.1F is a top plan view of an example trench of the example fluidic device die 104 of FIG.1B.
- FIG.2 illustrates a plan view of a front region of the example fluidic device die of FIG.1B.
- FIG.3 illustrates an example of a method of making the example fluidic device die of FIG.1B.
- DETAILED DESCRIPTION [0010]
- fluidic devices may be formed of multiple layers that are sometimes physically combined by using adhesives. Once the layers are combined, the fluidic device may be placed in an oven to harden the adhesives and facilitate adherence of the multiple layers.
- the present disclosure provides an example fluidic device die.
- the fluidic device die includes a membrane layer (e.g., glass) and a piezoelectric layer stacked on this membrane layer. An adhesive layer between the membrane layer and the piezoelectric layer is deposited to adhere the piezoelectric layer to the membrane layer.
- FIG.1A illustrates an example of a fluidic device die 104 of the present disclosure.
- fluidic device die 104 includes a membrane layer 110, a piezoelectric layer 108 stacked on membrane layer 110 and an adhesive layer 109 between membrane layer 110 and piezoelectric layer 108 to adhere piezoelectric layer 108 to membrane layer 110.
- Fluidic device die 104 also includes a trench 103 on a top surface 106 (FIG.1B) of membrane layer 110 between piezoelectric layer 108 and a front edge 114 (FIG.1B) of fluidic device die 104.
- FIG.1B illustrates a top perspective view of an example of fluidic device die 104 of the present disclosure.
- fluidic device die 104 may be a multilayered fluidic device die to selectively eject fluids via multiple nozzles 112a, 112b and 112c (collectively “nozzles 112”).
- fluidic device die 104 is shown as an elongated six-sided substantially silicon substrate 101 extending from right to left from a front interface 102 to a back surface 116. On this front interface 102, nozzles 112a, 112b, 112c are incorporated into silicon substrate 101.
- FIG.1C which is a plan view of front interface 102, nozzles 112a, 112b, 112c can also be seen.
- Membrane layer 110 may be a flexible or bendable silica-based material such as a glass slab having sodium-containing Borofloat or Pyrex.
- the slab of membrane layer 110 is applied to cap fluidic channels 111a, 111b, 111c which extend respectively to nozzles 112a, 112b, 112c.
- membrane layer 110 is 700 mm B33 Glass. This glass wafer may be bonded to silicon substrate 101 via anodic bonding to seal the glass wafer onto silicon substrate 101.
- Piezoelectric layer 108 (108a, 108b, 108c) is stacked over membrane layer 110 after silicon substrate 101 is capped with membrane layer 110.
- Piezoelectric layer 108 may be a PZT (lead zirconate titanate) slab or other comparable materials.
- the PZT slab is scored into strips with a saw blade to define individual actuators that can deform membrane layer 110 to provide the force to eject fluid via nozzles 112a, 112b, 112c.
- Adhesive layer 109 is deposited between membrane layer 110 and piezoelectric layer 108 to adhere piezoelectric layer 108 to membrane layer 110.
- Adhesive layer 109 can be an epoxy or adhesive, the bonding of which is sufficiently strong to adhere piezoelectric layer 108 to membrane layer 110 so that the mechanical properties of piezoelectric layer 108 can be transferred to membrane layer 110 when an electric voltage is applied.
- Other comparable adhesives or epoxies may be utilized.
- the term adhesive or adhesive layer may be employed interchangeably with epoxy or an epoxy layer.
- the excess adhesive may then wick to form a ⁇ llet on top of glass membrane layer 110.
- this ⁇ llet is too large and wicks too far, the excess adhesive can act as a stand-off to prevent proper sealing of additional components to the assembly.
- the excess adhesive may also continue to wick from adhesive layer 109 to front interface 102 to clog nozzles 112a, 112b and 112c.
- Trench 103 is etched on the top surface of membrane layer 110. Trench 103 facilitates the trapping of any excessive adhesive that may wick from adhesive layer 109 toward nozzles 112.
- trench 103 is etched on membrane layer 110 between piezoelectric layer 108 and a front edge 114 of fluidic device die 104.
- Front edge 114 is itself an intersection of membrane layer 110 and front interface 102 of fluidic device die 104.
- Trench 103 also extends laterally from side to side so as to be substantially perpendicular with a major axis A of fluidic device die 104. Note that trench 103 is formed in a region 105 of the membrane layer 110 that extends beyond piezoelectric layer 108 to front edge 114 of membrane layer 110 and front interface 102.
- Trench 103 may have various dimensions.
- trench 103 is 10 microns although the width may be between 5 to 18 microns.
- the depth of trench 103 is 2 microns although the depth may be between 1 and 4 microns.
- trench 103 of the present disclosure involves shallow features in membrane layer 110. Unlike other systems, trench 103 is not macro molded into a plastic part with substantially high dimensions in the 20 ⁇ 100 um range.
- Trench 103 can also be etched in different configurations. In an example configuration, trench 103 is substantially straight as shown in FIG.1B. Further yet, in an example configuration, trench 103 is curved as shown in FIG.1F.
- Trench 103 is not circular and enclosed onto itself to keep excess adhesive from going out of a region but rather, excess adhesive is prevented from wicking to front interface 102.
- trench 103 has a castellated pattern as shown in FIG.1E.
- the castellated pattern has regular alternating spaces that may be square similar to a battlement. In this example, the capacity of trench 103 is increased because of this castellated configuration.
- trench 103 may be etched so that the trench terminates before reaching the sides of fluidic device die 104. Further yet, in an example, trench 103 can be etched so that its ends are cut through the sides of fluidic device die 104.
- fluidic device die 104 also includes three fluidic channels 111a, 111b and 111c formed in silicon substrate 101. Although three fluidic channels are illustrated, additional fluidic channels along with their associated nozzles and components may be utilized.
- fluidic channels 111a, 111b, 111c may be formed by applying silicon etching, that is, by using hard mask and photoresist masking on silicon substrate 101. These same fluidic channels 111a, 111b and 111c are more clearly shown in FIG.1D which illustrates the fluidic channels extending to nozzles 112a, 112b, 112c.
- FIG.2 illustrates a top plan view of region 105 of the example fluidic device die 104 of FIG.1B.
- region 105 is a close-up of three areas: a die area 202, followed by an excess adhesive area 204 and an excess adhesive area 206.
- Die area 202 is entirely piezoelectric material and includes the front portions of each individual brick of piezoelectric layer 108a, 108b, and 108c (FIG.1B).
- Die area 202 also includes side saw lines 208 and front saw line 210.
- Front saw line 210 is scored into the piezoelectric layer with a saw to define the fronts of piezoelectric layer 108a, 108b, and 108c.
- the front of piezoelectric layer 108a, 108b, and 108c is the area closest to nozzles 112a, 112b, 112c (FIG.1B).
- Side saw lines 208 are also scored to define the sides of piezoelectric layer 108a, 108b, and 108c.
- each individual brick of piezoelectric layer 108a, 108b, and 108c can deform to eject fluid from the respective fluidic channels 111a, 111b, 111c (FIG.1B).
- side saw lines 208 and front saw line 210 are below the surface of piezoelectric layer 108a, 108b, and 108c which surface may be about 50 microns above side saw lines 208 and front saw line 210.
- the elevation of saw lines 208 and front saw line 210 may be at the same elevation or above the adjoining excess adhesive area 204.
- Die area 202 is followed by excess adhesive area 204. Excess adhesive area 204 is entirely machined epoxy.
- excess adhesive area 204 When wafers are placed in the oven, adhesive viscosity drops and adhesive may wick to excess adhesive area 204. Vacuum bagging pushes piezoelectric layer 108 down, squeezing out epoxy which forms a fillet around the die.
- excess adhesive area 204 extends laterally from a right side 201 to a left side 214 across the front of the individual piezoelectric layers 108a, 108b, and 108c.
- the excess epoxy in this region is machined contemporaneously with the outer portions of piezoelectric layer 108a, 108b, and 108c to define individual piezoelectric actuators.
- Reference identifiers 222 are etched on membrane layer 110 to identify nozzles 112a, 112b and 112c.
- trench 103 may be etched at the reference identifiers 222.
- excess adhesive 220 can then be intercepted by trench 103 to prevent excess adhesive 220 from reaching front edge 114 and nozzles 112a, 112b and 112c.
- the present disclosure significantly reduces yield loss due to excess adhesive 220 wicking too close to nozzles 112.
- the likelihood of defective parts with excess adhesive escaping downstream is reduced because yield loss is reduced.
- FIG.3 illustrates an example method 300 of making fluidic device die 104 (FIG.1B).
- method 300 is initiated by forming trench 103 (FIG.1B) on a membrane (e.g., membrane layer 110 of FIG.1B).
- an epoxy e.g., adhesive layer 109 of FIG.1B
- piezoelectric layer 108 is stacked on the epoxy (e.g., adhesive layer 109) to bond the piezoelectric layer 108 and the membrane (e.g., membrane layer 110).
- trench 103 is on a portion (e.g., region 105, FIG.
- method 300 involves machining a portion of the piezoelectric layer 108 (e.g., defined by front saw line 210 and side saw lines 208 (FIG.2), along with a portion of the excess epoxy (e.g., excess adhesive area 204) adjacent to piezoelectric layer 108, to define an individual piezoelectric actuator.
- the foregoing processes in this disclosure may be implemented through precision microfabrication techniques.
- fluidic device die 104 having multiple fluidic channels 111a..c, each fluidic channel 111a..c having a respective nozzle112a..c to eject fluid.
- Fluidic device die 104 further includes flexible glass membrane layer 110 to cover fluidic channels 111a..c; and piezoelectric layer 108 stacked on flexible glass membrane layer 110 to form a piezoelectric actuator for each fluidic channel 111a..c.
- Piezoelectric layer 108 and flexible glass membrane layer 110 are bonded with epoxy (e.g.
- trench 103 is provided to prevent wicking of excess epoxy from piezoelectric layer 108 to nozzles 112a..c.
- Trench 103 is formed on a portion (i.e., region 105) of flexible glass membrane layer 110 that extends beyond piezoelectric layer 108 to front edge 114 of flexible glass membrane layer 110 and front interface 102 having nozzles 112a..c.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
Dans un exemple, la présente invention concerne une puce de dispositif fluidique comprenant une couche de membrane et une couche piézoélectrique empilée sur cette couche de membrane. Une couche adhésive entre la couche de membrane et la couche piézoélectrique est déposée pour faire adhérer la couche piézoélectrique à la couche de membrane. Une tranchée est gravée sur une surface de la couche de membrane entre la couche piézoélectrique et un bord avant de la puce de dispositif fluidique.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2019/066387 WO2021118605A1 (fr) | 2019-12-13 | 2019-12-13 | Puce de dispositif fluidique |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2019/066387 WO2021118605A1 (fr) | 2019-12-13 | 2019-12-13 | Puce de dispositif fluidique |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2021118605A1 true WO2021118605A1 (fr) | 2021-06-17 |
Family
ID=76330307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/US2019/066387 WO2021118605A1 (fr) | 2019-12-13 | 2019-12-13 | Puce de dispositif fluidique |
Country Status (1)
Country | Link |
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WO (1) | WO2021118605A1 (fr) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070165070A1 (en) * | 2006-01-19 | 2007-07-19 | Seiko Epson Corporation | Liquid-jet head and liquid-jet apparatus |
US20100066206A1 (en) * | 2008-09-18 | 2010-03-18 | Fujifilm Dimatix, Inc. | Bonding On Silicon Substrate Having A Groove |
US20130200175A1 (en) * | 2011-06-09 | 2013-08-08 | Hewlett-Packard Development Company, L.P. | Fluid ejection device |
JP2015168145A (ja) * | 2014-03-07 | 2015-09-28 | ブラザー工業株式会社 | 液体吐出装置の製造方法、及び、液体吐出装置 |
-
2019
- 2019-12-13 WO PCT/US2019/066387 patent/WO2021118605A1/fr active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070165070A1 (en) * | 2006-01-19 | 2007-07-19 | Seiko Epson Corporation | Liquid-jet head and liquid-jet apparatus |
US20100066206A1 (en) * | 2008-09-18 | 2010-03-18 | Fujifilm Dimatix, Inc. | Bonding On Silicon Substrate Having A Groove |
US20130200175A1 (en) * | 2011-06-09 | 2013-08-08 | Hewlett-Packard Development Company, L.P. | Fluid ejection device |
JP2015168145A (ja) * | 2014-03-07 | 2015-09-28 | ブラザー工業株式会社 | 液体吐出装置の製造方法、及び、液体吐出装置 |
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