WO2021116816A1

WO2021116816A1 - Electronic device

Info

Publication number: WO2021116816A1
Application number: PCT/IB2020/061254
Authority: WO
Inventors: 木村肇; 和田理人
Original assignee: 株式会社半導体エネルギー研究所
Priority date: 2019-12-13
Filing date: 2020-11-30
Publication date: 2021-06-17
Also published as: JPWO2021116816A1; US20230014360A1

Abstract

Provided is an electronic device capable of accurately recognizing a user's emotion. This electronic device comprises a detection device, a calculation device, and a housing. The housing has a space in a position that overlaps a user's nose when the user wears the electronic device. The detection device is located between the housing and the user's nose. The detection device has a function for acquiring user data relating to the user's emotion and outputting the user data to the calculation device. The calculation device has a function for generating display data based on the user data and outputting the display data.

Description

Electronics

One aspect of the present invention relates to an electronic device.

Note that one aspect of the present invention is not limited to the above technical fields. As the technical fields of one aspect of the present invention disclosed in the present specification and the like, semiconductor devices, display devices, light emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices, input / output devices, their driving methods, and the like. Alternatively, a method for producing them can be given as an example. Semiconductor devices refer to all devices that can function by utilizing semiconductor characteristics.

Wearable display devices and stationary display devices are becoming widespread as display devices for augmented reality (AR) or virtual reality (VR). Wearable display devices include, for example, head-mounted displays (HMD: Head Mounted Display), eyeglass-type display devices, and the like. The stationary display device includes, for example, a head-up display (HUD: Head-Up Display) and the like.

A technology is being studied in which a sensor, camera, etc. are provided on the head-mounted display to acquire the movement and facial expression of the user's body and reflect this information on the display. Patent Document 1 and Patent Document 2 disclose a configuration in which a camera is provided on a head-mounted display to recognize a user's facial expression.

International Publication No. 2017/12229 Special Table 2018-538593

When a detection device is installed in an electronic device to acquire information about the user's emotions, if the detection device is installed at a position away from the user, the detection accuracy will be low and the user's emotions may not be recognized with high accuracy. There is. Further, if the detection device protrudes from the housing of the electronic device, the detection device may be damaged by interfering with the user or other objects, and the reliability of the electronic device may be lowered.

One aspect of the present invention is to provide an electronic device capable of recognizing a user's emotion with high accuracy. Alternatively, one aspect of the present invention is to provide an electronic device capable of estimating the type and degree of emotions of a user with high accuracy. Alternatively, one aspect of the present invention is to provide a highly reliable electronic device. Alternatively, one aspect of the present invention is to provide a new electronic device.

The description of these issues does not prevent the existence of other issues. It should be noted that one aspect of the present invention does not need to solve all of these problems. Issues other than these can be extracted from the description of the description, drawings, claims and the like.

One aspect of the present invention is an electronic device having a detection device, an arithmetic unit, and a housing. The housing has a space at a position where it overlaps with the nose when worn by the user. The detection device is located between the housing and the user's nose. The detection device has a function of acquiring user data regarding the user's emotions and outputting the user data to the arithmetic unit. The arithmetic unit has a function of generating display data based on user data and outputting the display data.

One aspect of the present invention is an electronic device having a detection device, an arithmetic unit, and a housing. The housing has a space at a position where it overlaps with the user's nose when worn by the user. The detection device is located inside the housing so as to overlap the user's nose. The detection device has a function of acquiring user data regarding the user's emotions and outputting the user data to the arithmetic unit. The arithmetic unit has a function of generating display data based on user data and outputting the display data.

One aspect of the present invention is an electronic device having a detection device, an arithmetic unit, a display device, and a housing. The housing has a space at a position where it overlaps with the nose when worn by the user. The detector is located between the housing and the user's nose. The detection device has a function of acquiring user data regarding the user's emotions and outputting the user data to the arithmetic unit. The arithmetic unit has a function of generating display data based on user data and outputting the display data to the display device.

One aspect of the present invention is an electronic device having a detection device, an arithmetic unit, a display device, and a housing. The housing has a space at a position where it overlaps with the nose when worn by the user. The detection device is located inside the housing so as to overlap the user's nose. The detection device has a function of acquiring user data regarding the user's emotions and outputting the user data to the arithmetic unit. The arithmetic unit has a function of generating display data based on user data and outputting the display data to the display device.

In the above-mentioned electronic device, the detection device preferably has any one or more of a temperature sensor, a humidity sensor, a microphone, and an image pickup device.

In the above-mentioned electronic device, the user data is preferably any one or more of temperature, humidity, sound, or image.

It is preferable that the above-mentioned electronic device further has an adjustment mechanism. The adjusting mechanism has a function of adjusting the angle of the detection device with respect to the housing.

In the above-mentioned electronic device, it is preferable that the detection device has an image pickup device. The detection device has a function of outputting the captured image of the user as user data to the arithmetic unit. The arithmetic unit has a function of estimating the user's emotion from the user data and generating display data based on the estimated emotion.

In the above-mentioned electronic device, the user data is preferably an image of a part including the user's nose.

In the above-mentioned electronic device, the user data is preferably an image of a part including the user's mouth.

In the above-mentioned electronic device, it is preferable to use a neural network for estimation.

According to one aspect of the present invention, it is possible to provide an electronic device capable of recognizing a user's emotion with high accuracy. Alternatively, according to one aspect of the present invention, it is possible to provide an electronic device capable of estimating the type and degree of emotions of a user with high accuracy. Alternatively, one aspect of the present invention can provide a highly reliable electronic device. Alternatively, one aspect of the present invention can provide a novel electronic device.

The description of these effects does not prevent the existence of other effects. It should be noted that one aspect of the present invention does not necessarily have to have all of these effects. Effects other than these can be extracted from the description of the specification, drawings, claims and the like.

1A and 1B are external views showing a configuration example of an electronic device.
2A and 2B are external views showing a configuration example of an electronic device.
3A and 3B are block diagrams showing a configuration example of an electronic device.
4A to 4C are external views showing a configuration example of the housing.
5A and 5B are external views showing a configuration example of an electronic device.
6A and 6B are external views showing a configuration example of an electronic device.
7A and 7B are diagrams illustrating a housing and a detection device.
8A and 8B are external views showing a configuration example of an electronic device.
9A and 9B are external views showing a configuration example of an electronic device.
FIG. 10A is an external view showing a configuration example of an electronic device. FIG. 10B is a block diagram showing a configuration example of an electronic device.
11A and 11B are external views showing a configuration example of an electronic device.
FIG. 12 is a block diagram showing a configuration example of an electronic device.
FIG. 13 is an external view showing a configuration example of an electronic device.
14A and 14B are external views showing a configuration example of an electronic device.
FIG. 15 is an external view showing a configuration example of an electronic device.
16A and 16B are external views showing a configuration example of an electronic device.
FIG. 17 is a block diagram showing a configuration example of the arithmetic unit.
18A and 18B are diagrams showing a configuration example of a neural network. FIG. 18C is a diagram illustrating emotion estimation.
19A1 to 19A4 and 19B1 to 19B4 are diagrams showing an example of an image of a portion including a mouth.
20A and 20B are diagrams showing an example of the user's field of view.
21A and 21E are diagrams showing an example of the user's field of view.
22A to 22C are views showing a configuration example of the housing.
23A and 23B are views showing a configuration example of the housing.
24A and 24B are external views showing a configuration example of the housing.
FIG. 25 is a block diagram showing a configuration example of the display device.
FIG. 26 is a block diagram showing a configuration example of the display device.
27A to 27G are diagrams showing a configuration example of pixels.
28A and 28B are circuit diagrams showing a configuration example of pixels.
FIG. 29A is a circuit diagram showing a configuration example of pixels. FIG. 29B is a timing chart showing an example of how the pixels operate.
30A to 30E are circuit diagrams showing a configuration example of pixels.
FIG. 31 is a block diagram showing a configuration example of the display device.
FIG. 32 is a diagram illustrating an operation example of the display device.
FIG. 33 is a cross-sectional view showing a configuration example of the display device.
FIG. 34 is a cross-sectional view showing a configuration example of the display device.
FIG. 35 is a cross-sectional view showing a configuration example of the display device.
FIG. 36 is a cross-sectional view showing a configuration example of the display device.
37A to 37E are diagrams showing a configuration example of a light emitting device.
38A and 38B are cross-sectional views showing a configuration example of the image pickup apparatus.
FIG. 39A is a top view showing a configuration example of the transistor. 39B and 39C are cross-sectional views showing a configuration example of a transistor.
FIG. 40A is a top view showing a configuration example of the transistor. 40B and 40C are cross-sectional views showing a configuration example of a transistor.
FIG. 41A is a top view showing a configuration example of the transistor. 41B and 41C are cross-sectional views showing a configuration example of a transistor.

Hereinafter, embodiments will be described with reference to the drawings. However, it is easily understood by those skilled in the art that the embodiments can be implemented in many different embodiments, and that the embodiments and details can be variously changed without departing from the spirit and scope thereof. .. Therefore, the present invention is not construed as being limited to the description of the following embodiments.

In the configuration of the invention described below, the same reference numerals are commonly used between different drawings for the same parts or parts having similar functions, and the repeated description thereof will be omitted. Further, when referring to the same function, the hatch pattern may be the same and no particular sign may be added.

Note that in each of the figures described herein, the size, layer thickness, or region of each configuration may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

Note that the ordinal numbers such as "first" and "second" in the present specification and the like are added to avoid confusion of the components, and are not limited numerically.

In the present specification, terms indicating the arrangement of "above", "below", "left", "right", etc. are used for convenience in order to explain the positional relationship between the configurations with reference to the drawings. I am using it. Further, the positional relationship between the configurations changes as appropriate according to the direction in which each configuration is depicted. Therefore, it is not limited to the words and phrases explained in the specification, and can be appropriately paraphrased according to the situation.

A transistor is a type of semiconductor element, and can realize amplification of current and voltage, switching operation to control conduction or non-conduction, and the like. The transistor in the present specification includes an IGBT (Insulated Gate Field Effect Transistor) and a thin film transistor (TFT: Thin Film Transistor).

In the present specification and the like, the source and drain functions of the transistor may be interchanged when the polarity of the transistor or the direction of the current changes in the circuit operation. Therefore, the terms source and drain can be used interchangeably.

In the present specification and the like, "electrically connected" includes a case of being directly connected and a case of being connected via "something having some electrical action". Here, the "thing having some kind of electrical action" is not particularly limited as long as it enables the exchange of electric signals between the connection targets. Therefore, even when it is expressed as "electrically connected", in an actual circuit, there is a case where there is no physical connection part and only the wiring is extended. Further, even when expressed as "direct connection", a case where different conductors are connected via a contact is included. In the wiring, there are cases where different conductors contain one or more same elements and cases where different conductors contain different elements.

In the present specification and the like, unless otherwise specified, the off-current means a drain current when the transistor is in an off state (also referred to as a non-conducting state or a cut-off state). The off state is a state in which the voltage V _gs between the gate and the source is lower than the threshold voltage V _{th in the} n-channel transistor (higher than _{V th} in the p-channel transistor) unless otherwise specified. To say.

In the present specification and the like, the terms "electrode" and "wiring" do not functionally limit these components. For example, an "electrode" may be used as part of a "wiring" and vice versa. Further, the terms "electrode" and "wiring" include the case where a plurality of "electrodes" and "wiring" are integrally formed.

In this specification and the like, the resistance value of "resistance" may be determined by the length of the wiring. Alternatively, the resistance value may be determined by connecting to a conductor having a resistivity different from that of the conductor used in wiring. Alternatively, the resistance value may be determined by doping the semiconductor with impurities.

In the present specification and the like, the "terminal" in an electric circuit means a part where current or voltage input or output and signal reception or transmission are performed. Therefore, a part of the wiring or the electrode may function as a terminal.

In the present specification and the like, a metal oxide is a metal oxide in a broad sense. Metal oxides are classified into oxide insulators, oxide conductors (including transparent oxide conductors), oxide semiconductors (also referred to as Oxide Semiconductor or simply OS) and the like. For example, when a metal oxide is used in the active layer of a transistor, the metal oxide may be referred to as an oxide semiconductor. That is, when it is described as OS FET, it can be paraphrased as a transistor having an oxide or an oxide semiconductor.

(Embodiment 1)
In the present embodiment, the electronic device of one aspect of the present invention will be described with reference to the drawings.

One aspect of the present invention is an electronic device having a display device, a detection device, an arithmetic unit, and a housing. The detection device has a function of acquiring data related to the user's emotions and outputting the data to the arithmetic unit. The arithmetic unit has a function of generating display data based on the data and outputting the display data to the display device.

As data on the user's emotions, for example, temperature, humidity, or an image around the nose or mouth can be used. When a user using an electronic device gets excited, the temperature and humidity around the nose or mouth may rise. By acquiring the temperature or humidity around the nose or mouth, the degree of excitement of the user can be estimated. By acquiring an image of the mouth, it is possible to estimate the type and degree of emotions of the user. Further, by displaying the estimated emotion of the user on the electronic device, the user can recognize his / her own state and enhance the immersive feeling.

The electronic device according to one aspect of the present invention has a space in a portion where the nose of the user of the housing is located, and the above-mentioned detection device is located in the space. By providing a detection device near the user's nose, the user's emotions can be recognized with higher accuracy. Further, by providing the detection device in the space and preventing the detection device from protruding from the housing, it is possible to prevent the detection device from interfering with the user or other objects, and it is possible to improve the reliability of the electronic device. ..

<Configuration example 1 of electronic device>
Configuration examples of electronic devices according to one aspect of the present invention are shown in FIGS. 1A, 1B, 2A, 2B and 3A. 1A, 1B, 2A and 2B are perspective views illustrating the appearance of the electronic device 10. FIG. 3A is a block diagram showing the configuration of the electronic device 10.

In the drawings attached to this specification, the components are classified by function and the block diagram is shown as blocks independent of each other. However, it is difficult to completely separate the actual components by function, and one component is used. It is possible that a component is involved in a plurality of functions, or that one function is realized by a plurality of components.

The electronic device 10 has a function of displaying an image. The electronic device 10 can be used as a head-mounted display (HMD). The electronic device 10 can be suitably used as a display device for displaying an image for augmented reality (AR) or virtual reality (VR). The electronic device 10 can also be said to be a goggle type electronic device.

As shown in FIGS. 1A and 1B, the electronic device 10 includes a housing 11 and a detection device 17. The housing 11 has a space 41 at the lower portion, and the detection device 17 is provided in the space 41. The space 41 can also be said to be a recess of the housing 11. The space 41 is provided at a position where the user overlaps with the user's nose when wearing the electronic device 10. In FIG. 1B, the housing 11 is shown by a broken line in order to clearly show the positional relationship between the housing 11 and the detection device 17. The electronic device 10 shown in FIGS. 1A and 1B can be used as an HMD by combining with another electronic device having a display unit.

As shown in FIGS. 2A and 2B, the electronic device 10 may include a housing 11, a display device 13, a detection device 17, an arithmetic device 19, and a storage device 18. Further, the electronic device 10 may further include an optical member 15L and an optical member 15R. In FIG. 2B, the housing 11 is shown by a broken line in order to clearly show the positional relationship between the housing 11, the display device 13, the detection device 17, the arithmetic unit 19, the storage device 18, the optical member 15L, and the optical member 15R. ing.

The display device 13 has pixels and has a function of displaying an image. Examples of the display device 13 include a liquid crystal display device, a light emitting device (for example, a light emitting device having a light emitting device in each pixel), an electrophoresis display device, a DMD (Digital Micromirror Device), a PDP (Plasma Display Panel), and a FED (Field). Emission Display) and the like can be used.

As the light emitting device, it is preferable to use an OLED (Organic Light Emitting Diode), a QLED (Quantum-dot Light Emitting Diode), or the like. Luminescent substances possessed by light emitting devices include substances that emit fluorescence (fluorescent materials), substances that emit phosphorescence (phosphorescent materials), and substances that exhibit thermally activated delayed fluorescence (Thermally activated delayed fluorescence (TADF) materials). , Inorganic compounds (quantum dot materials, etc.) and the like. Further, as the light emitting device, an LED such as a micro LED (Light Emitting Diode) can also be used.

When the electronic device 10 is used as a head-mounted display, the distance between the user's eyes and the display device 13 is shortened, so that the user can easily see the pixels and feel a strong graininess. The feeling and presence may be diminished. Therefore, it is preferable that the display device 13 has a high definition so that the pixels are not visually recognized by the user. By using the display device 13 with high definition, the user of the electronic device 10 can visually recognize the image displayed on the display device 13 without feeling graininess. The definition of the display device 13 is, for example, preferably 1000 ppi or more, more preferably 2000 ppi or more, and further preferably 5000 ppi or more. Further, in the AR application, since the image of the virtual space is superimposed on the real space and displayed, it is desired that the brightness of the display device 13 is high, particularly when the usage environment is bright.

The detection device 17 has a function of acquiring information on the surrounding environment of the electronic device 10 or data on the emotions of the user (hereinafter, also referred to as user data) and outputting the data to the arithmetic unit 19. As user data, for example, temperature, humidity, sound, image, etc. can be used. As the detection device 17, for example, a temperature sensor, a humidity sensor, a microphone, or an image pickup device can be used. As the image pickup device, for example, a camera or a video camera can be used. A plurality of these may be used in combination as the detection device 17.

The arithmetic unit 19 has a function of generating display data according to the emotions of the user by arithmetically processing the user data output from the detection device 17 and outputting the display data to the display device 13.

As the arithmetic unit 19, for example, a CPU (Central Processing Unit), a DSP (Digital Signal Processor), a GPU (Graphics Processing Unit), or the like can be used. Further, the arithmetic unit 19 may be configured by a PLD (Programmable Logic Device) such as an FPGA (Field Programmable Gate Array) or an FPAA (Field Programmable Analog Array).

The storage device 18 has a function of holding a program executed by the arithmetic unit 19, data input to the arithmetic unit 19, data output from the arithmetic unit 19, and the like.

As the storage device 18, a storage device to which a non-volatile storage element is applied can be preferably used. As the storage device 18, for example, a flash memory, an MRAM (Magnetoresistive Random Access Memory), a PRAM (Phase change RAM), a ReRAM (Restingive RAM), a FeRAM (Ferroelectric RAM), or the like can be used.

FIG. 3B shows a configuration different from that of the electronic device 10 shown in FIG. 3A.

The electronic device 10 shown in FIG. 3A has an input / output device 21. The input / output device 21 has a function of acquiring information from the outside of the electronic device 10 and a function of outputting information to the outside. Further, the input / output device 21 has a function of acquiring information from the arithmetic unit 19 and a function of outputting information to the arithmetic unit 19. Information acquired from the outside of the electronic device 10 includes, for example, contents such as video, music, and games. The information output to the outside of the electronic device 10 includes, for example, the emotion of the user acquired by the electronic device 10.

The input / output device 21 can communicate with a wired or wireless network, and can input / output information to / from the server 23 via the network. When wireless communication is used in a network, in addition to short-range communication means such as Wi-Fi (registered trademark) and Bluetooth (registered trademark), LTE (3.) is a communication means compliant with the 3rd generation mobile communication system (3G). Various communication means such as a communication means compliant with (sometimes referred to as 9G), a communication means compliant with the 4th generation mobile communication system (4G), or a communication means compliant with the 5th generation mobile communication system (5G). Can be used.

The housing 11 will be described with reference to FIGS. 4A to 4C. 4A to 4C are external views showing the configuration of the housing 11. FIG. 4B shows the display device 13 and the detection device 17 with broken lines in order to show the positional relationship between the display device 13 and the detection device 17 and the housing 11.

The housing 11 has a first portion 12a, a second portion 12b, a third portion 12c, a fourth portion 12d, and a fifth portion 12e. 4A and 4B show perspective views from the opposite side (user side) of the first portion 12a, and FIG. 4C shows a perspective view from the first portion 12a side (opposite side of the user). A perspective view is shown.

The second portion 12b is connected to the first portion 12a. The third portion 12c is connected to the second portion 12b via the first portion 12a. The third portion 12c has a space 41 shown by the alternate long and short dash line in FIGS. 4A and 4B. The fourth portion 12d is connected to the first portion 12a, the second portion 12b, and the third portion 12c. The fifth portion 12e is connected to the first portion 12a, the second portion 12b, and the third portion 12c. Further, the first portion 12a to the fifth portion 12e may be detachable from each other. Note that FIG. 4A and the like show a configuration example in which the fourth portion 12d and the fifth portion 12e are not connected, but one aspect of the present invention is not limited to this. The fourth portion 12d and the fifth portion 12e may be connected.

As shown in FIG. 4B, the display device 13 is located between the second portion 12b and the third portion 12c. The display device 13 may be fixed to any one or more of the first portion 12a and the fifth portion 12e. The detection device 17 is provided in the space 41 of the third portion 12c.

Regarding the positional relationship between the housing 11, the display device 13, the detection device 17, the arithmetic unit 19, the storage device 18, the optical member 15L, and the optical member 15R, FIGS. 2A, 2B, 5A, 5B, 6A, and 6B. Will be described using.

FIG. 5A is an external view of the electronic device 10 as viewed from the opposite side (user side) of the first portion 12a. FIG. 5B is an external view of the electronic device 10 as viewed from the fourth portion 12d side (left side of the user). FIG. 6A is an external view of the electronic device 10 as viewed from the second portion 12b side (upper side of the user). FIG. 6B is an external view of the electronic device 10 as viewed from the third portion 12c side (lower side of the user). In FIGS. 5A, 5B, 6A and 6B, the first portion 12a, the second portion 12b, the third portion 12c, the fourth portion 12d, and the fifth portion 12e are shown by broken lines. Further, FIGS. 5B and 6A show an example when the user wears the electronic device 10. In FIG. 5B, the detection device 17, the storage device 18, and the arithmetic unit 19 are omitted for the purpose of clarifying the figure.

The detection device 17 is preferably fixed to the third portion 12c. Further, as shown in FIG. 5B and the like, it is preferable that the detection device 17 does not protrude from the housing 11. When the detection device 17 protrudes from the housing 11, the detection device 17 may interfere with the user or another object, and the detection device 17 may be damaged. By providing the detection device 17 in the space 41 and not protruding from the housing 11, damage to the detection device 17 can be prevented. Therefore, the reliability of the electronic device 10 can be improved. In addition, the electronic device 10 can be miniaturized, and convenience and design can be improved.

Space 41 will be explained. An enlarged view of the space 41 as seen from the fourth portion 12d side (left side of the user) is shown in FIG. 7A. An enlarged view of the space 41 as seen from the third portion 12c side (lower side of the user) is shown in FIG. 7B.

As shown in FIGS. 5B, 7A and 7B, it is preferable that the space 41 has a shape in which the width increases from the upper part to the lower part. Further, it is preferable that the side surface of the space 41 has an angle at which the detection device 17 can easily acquire information on the user's nose or mouth.

The angle θ1 between the housing 11 and the lower bottom of the space 41 is preferably 120 degrees or more and 170 degrees or less, more preferably 130 degrees or more and 165 degrees or less, further preferably 135 degrees or more and 160 degrees or less, and further. It is preferably 140 degrees or more and 160 degrees or less, more preferably 145 degrees or more and 155 degrees or less, and further preferably 150 degrees or more and 155 degrees or less. The length LB of the space 41 is preferably 30 mm or more and 100 mm or less, more preferably 40 mm or more and 95 mm or less, further preferably 50 mm or more and 90 mm or less, further preferably 60 mm or more and 85 mm or less, and further 70 mm or more and 80 mm or less. Is preferable. The length LH of the space 41 is preferably 30 mm or more and 100 mm or less, more preferably 40 mm or more and 95 mm or less, further preferably 50 mm or more and 90 mm or less, further preferably 60 mm or more and 85 mm or less, and further preferably 70 mm or more and 80 mm or less. .. By forming the space 41 into the above-mentioned shape, the detection device 17 can be provided at a position that does not interfere with the user's nose. Further, the detection device 17 can be provided at an angle at which information on the user's nose or mouth can be easily acquired.

As shown in FIG. 5B, it is preferable that the housing 11 does not cover the user's mouth. If the housing covers the mouth, the user may feel uncomfortable or oppressive. In the electronic device 10 which is one aspect of the present invention, the information on the user's mouth can be acquired without the housing 11 covering the user's mouth.

Although FIG. 2A and the like show a configuration in which the detection device 17 is located outside the housing 11, one aspect of the present invention is not limited to this. As shown in FIG. 8A, the detection device 17 may be provided inside the housing 11. By providing the detection device 17 inside the housing 11, it is possible to suppress interference between the user and the detection device 17, and it is possible to improve the reliability of the electronic device. Further, the housing 11 may have an opening (not shown) located between the detection device 17 and the user. Since the housing 11 has the opening, the detection accuracy of the detection device 17 can be improved.

An enlarged view of the space 41 is shown in FIG. 8B. The angle θ1 of the angle formed by the housing 11 and the lower bottom portion of the space 41 is preferably in the above range.

The electronic device 10 may have an adjustment mechanism for adjusting the position and angle of the detection device 17. 9A and 9B show a configuration in which the electronic device 10 has an adjusting mechanism 45. The adjusting mechanism 45 has a function of adjusting the position and angle of the detection device 17, and can easily acquire the state of each nose and mouth according to the user. The adjusting mechanism 45 is preferably fixed to the housing 11.

The angle θ2 between the housing 11 and the detection device 17 is preferably in the range of the above-mentioned angle θ1. By setting the angle θ2 within the above range, the detection device 17 can be provided at a position that does not interfere with the user's nose. Further, the detection device 17 can be provided at an angle at which information on the user's nose or mouth can be easily acquired. For example, by reducing the angle 2θ, it is possible to easily acquire the information on the user's nose. For example, by increasing the angle 2θ, it is possible to easily acquire the information of the user's mouth.

Although FIG. 2A and the like show a configuration in which one detection device 17 is provided in the space 41, one aspect of the present invention is not limited to this. A plurality of detection devices 17 may be provided in the space 41. FIG. 10A shows an external view of the electronic device 10 provided with the detection device 17L and the detection device 17R in the space 41. A block diagram showing the configuration of the electronic device 10 is shown in FIG. 10B. FIG. 10A is an external view of the electronic device 10 as viewed from the opposite side (user side) of the first portion 12a. In FIG. 10A, the first portion 12a, the second portion 12b, the third portion 12c, the fourth portion 12d, and the fifth portion 12e are shown by broken lines.

For example, in the space 41, the detection device 17L can be provided on the left side of the user, and the detection device 17R can be provided on the right side of the user. In this case, the detection device 17L can acquire the information on the left side of the user's nose, and the detection device 17R can acquire the information on the right side of the nose. Further, the angles at which the detection device 17L and the detection device 17R are provided may be adjusted so that the detection device 17L can acquire the information on the right side of the user's mouth and the detection device 17R can acquire the information on the left side of the user's mouth. ..

The user data acquired by the detection device 17L and the detection device 17R are output to the arithmetic unit 19, respectively. By using a plurality of detection devices, the emotions of the user can be acquired with higher accuracy.

The arithmetic unit 19 and the storage device 18 are located between the second portion 12b and the third portion 12c, respectively. Even if the arithmetic unit 19 and the storage device 18 are fixed to any one or more of the first portion 12a, the second portion 12b, the third portion 12c, the fourth portion 12d, and the fifth portion 12e, respectively. Good. Although FIG. 2A and the like show an example in which the arithmetic unit 19 and the storage device 18 are located on the fifth portion 12e side, one aspect of the present invention is not limited to this.

The optical member 15L and the optical member 15R are located between the second portion 12b and the third portion 12c, respectively. Even if the optical member 15L and the optical member 15R are fixed to any one or more of the first portion 12a, the second portion 12b, the third portion 12c, the fourth portion 12d, and the fifth portion 12e, respectively. Good.

As shown in FIG. 5B and the like, the detection device 17 is provided in the space 41. Further, when the electronic device 10 is used, the user's nose is located in the space 41. The space 41 preferably has a shape in which the width increases from the upper part to the lower part. That is, it is preferable that the space 41 has a shape in which the width increases from the second portion 12b side to the third portion 12c side. When the space 41 has such a shape, the detection device 17 provided in the space 41 can easily acquire information around the user's nose or mouth.

If the user gets excited while using the electronic device 10, the body temperature rises, the temperature of nasal breathing and exhalation also rises, and the temperature of the environment around the nose and mouth may rise. By using a temperature sensor as the detection device 17 and acquiring the temperature of the environment around the nose or mouth, the degree of excitement of the user can be estimated. For example, it can be estimated that the higher the temperature of the environment around the nose or mouth, the higher the degree of excitement of the user.

If the user gets excited while using the electronic device 10, the body temperature may rise and the skin temperature around the nose or mouth may rise. By using a temperature sensor as the detection device 17 and acquiring the skin temperature around the nose and mouth, the degree of excitement of the user can be estimated. For example, it can be estimated that the higher the skin temperature around the nose and mouth, the higher the degree of excitement of the user.

If the user gets excited while using the electronic device 10, breathing becomes faster, and the humidity of the environment around the nose or mouth may increase due to nasal breathing and exhalation. By using a humidity sensor as the detection device 17 and acquiring the humidity of the environment around the nose and mouth, the degree of excitement of the user can be estimated. For example, it can be estimated that the higher the humidity of the environment around the nose and mouth, the higher the degree of excitement of the user.

If the user gets excited while using the electronic device 10, the voice may become louder. By using a microphone as the detection device 17 and acquiring the voice of the user, the degree of excitement of the user can be estimated. For example, it can be estimated that the louder the voice of the user, the higher the degree of excitement of the user.

If the user gets excited while using the electronic device 10, the body temperature may rise and sweat may occur. The degree of excitement of the user can be estimated by imaging the nose or under the nose using an imaging device as the detection device 17 and acquiring the state of sweating under the nose or nose. For example, it can be estimated that the greater the amount of sweating on the nose or under the nose, the higher the degree of excitement of the user.

While using the electronic device 10, the type and degree of emotions of the user may change. By imaging the mouth using an imaging device as the detection device 17 and acquiring the shape of the mouth, it is possible to estimate the type and degree of emotions of the user.

When an imaging device is used as the detection device 17, the detection device 17 may have a light source (not shown). By having the light source, the light emitted from the light source is reflected by the user's face, and the reflected light can be detected by the detection device 17. For example, it is preferable that the light source has a function of emitting red light and the imaging device has a function of detecting red light. For example, it is preferable that the light source has a function of emitting near-infrared light and the imaging device has a function of detecting near-red light. For example, it is preferable that the light source has a function of emitting mid-infrared light and the imaging device has a function of detecting mid-red light. For example, it is preferable that the light source has a function of emitting far-infrared light and the imaging device has a function of detecting far-infrared light. As a result, the electronic device 10 can accurately acquire the sweating state and the shape of the mouth of the user.

In the present specification and the like, infrared light means, for example, light having a wavelength of 0.7 μm or more and 1000 μm or less. Further, the near-infrared light means, for example, light having a wavelength of 0.7 μm or more and 2.5 μm or less, and the mid-infrared light means light having a wavelength of 2.5 μm or more and 4 μm or less, for example. Further, the far-infrared light means, for example, light having a wavelength of 4 μm or more and 1000 μm or less. Infrared light, mid-infrared light, or far-infrared light may be simply referred to as infrared light. Further, in the present specification and the like, red light means, for example, light having a wavelength of 0.6 μm or more and 0.75 μm or less.

By having the detection device 17, the electronic device 10 according to one aspect of the present invention can acquire the degree of excitement of the user, the type of emotion of the user, and the degree thereof. In this specification and the like, the degree of excitement of the user and the type and degree of the user's emotion may be collectively referred to as the user's emotion. Further, the electronic device 10 which is one aspect of the present invention can display information according to the emotion of the user on the display device 13. A character (also referred to as an avatar) that is an alter ego of the user may be made to have a facial expression according to the emotion of the user and displayed on the display device 13. The user can recognize his / her emotions and can enhance the immersive feeling. The user can also make a choice such as taking a break by recognizing his / her emotions.

As shown in FIG. 5B, the detection device 17 can be configured to be located outside the housing 11. In this case, the detection device 17 is located between the housing 11 and the user's nose. By configuring the detection device 17 to be located outside the housing 11, the detection accuracy of the detection device 17 can be improved because there is no housing 11 between the user and the detection device 17.

The area of the second part 12b opposite to the first part 12a is the part that comes into contact with the user's forehead. Further, the region of the third portion 12c opposite to the first portion 12a is a portion that comes into contact with the cheek of the user. Each of the regions preferably has a curved shape, and particularly preferably has an arc shape toward the first portion 12a side. Since the region has a curved or arcuate shape, the second portion 12b can be brought into close contact with the user's forehead or cheek. Therefore, light leakage from the outside of the electronic device 10 is suppressed, and the user can further enhance the immersive feeling. The shape of the housing 11 of the electronic device 10 is not limited to the configuration shown in FIG. 2A and the like.

The optical member 15L and the optical member 15R each have an area overlapping with the display device 13 and are located between the display device 13 and the user. The user can visually recognize the image displayed on the display device 13 through the optical member 15L and the optical member 15R. In FIG. 2A and the like, the optical member 15L for the left eye and the optical member 15R for the right eye are shown. Each of the optical member 15L and the optical member 15R has a function of magnifying and projecting an image displayed on the display device 13 onto the user. As the optical member 15L and the optical member 15R, for example, a convex lens can be used. Although the optical member 15L and the optical member 15R are each shown by one convex lens in FIG. 2A and the like, the shape is not particularly limited, and a plurality of optical members may be used in combination.

As the material of the optical member 15L and the optical member 15R, for example, plastic or glass can be used. The plastic is preferably a material having high transparency to visible light, and for example, urethane resin, acrylic resin, carbon resin, and allyl resin can be used. Further, by using a material in which halogen, aromatic ring, or sulfur having a large atomic refraction is added to these plastics, the refractive indexes of the optical member 15L and the optical member 15R can be increased. As the halogen, for example, it is preferable to use any one or more of chlorine, bromine, and iodine.

<Configuration example 2 of electronic device>
Although FIG. 2A and the like show a configuration example in which the electronic device 10 has one display device, one aspect of the present invention is not limited to this. The electronic device according to one aspect of the present invention may have a plurality of display devices. A configuration example of the electronic device 10a having two display devices is shown in FIGS. 11A and 11B. FIG. 11A is a perspective view illustrating the appearance of the electronic device 10a. FIG. 11B shows the appearance of the electronic device 10a as seen from the second portion 12b side. In FIGS. 11A and 11B, the housing 11 is shown by a broken line. Further, FIG. 11B shows an example when the user wears the electronic device 10a.

The electronic device 10a shown in FIGS. 11A and 11B has a display device 13L and a display device 13R. When the electronic device 10a has the display device 13L and the display device 13R, the user can see the image displayed on one display device for each eye. As a result, a high-resolution image can be displayed even when performing three-dimensional display or the like using parallax.

A block diagram showing a configuration example of the electronic device 10a is shown in FIG. The display data generated by the arithmetic unit 19 is output to the display device 13L and the display device 13R as different data.

As shown in FIG. 13, the electronic device 10a may further have a separator 29. The separator 29 is preferably provided so as to be orthogonal to the display surface of the display device 13L and the display device 13R. Further, the separator 29 is preferably provided on the user side of the display device 13L and the display device 13R. By separating the visual fields of the left and right eyes by the separator 29, the display visually recognized by the left and right eyes can be different, and binocular parallax can be generated. This binocular parallax makes the user feel three-dimensional visual recognition.

FIG. 2A and the like show a configuration example in which the display device of the electronic device is a flat surface, but one aspect of the present invention is not limited to this. The display device included in the electronic device according to one aspect of the present invention may be curved. A configuration example of the electronic device 10b having a curved display device is shown in FIGS. 14A and 14B. FIG. 14A is a perspective view illustrating the appearance of the electronic device 10b. FIG. 14B shows the appearance of the electronic device 10b as seen from the second portion 12b side. In FIGS. 14A and 14B, the housing 11 is shown by a broken line. Further, FIG. 14B shows an example when the user wears the electronic device 10b.

14A and 14B show a configuration in which the display device 13L and the display device 13R are curved in an arc shape with the user's eyes as the approximate center, respectively. As a result, the distance from the user's eyes to the display surface of the display unit becomes constant, so that the user can see a more natural image. Further, even if the brightness and chromaticity of the light from the display unit change depending on the viewing angle, the user's eyes are positioned in the normal direction of the display surface of the display unit, so that the user's eyes are substantially located. Since the influence can be ignored, a more realistic image can be displayed.

<Configuration example 3 of electronic device>
FIG. 15 shows a configuration example different from the electronic device 10 and the electronic device 10a described above. FIG. 15 is a perspective view illustrating the appearance of the electronic device 10b.

As shown in FIG. 15, the electronic device 10b includes a housing 11, a detection device 17, an arithmetic device 19, and a storage device 18. The housing 11 has a space 41 at the lower portion, and the detection device 17 is provided in the space 41. The electronic device 10b is mainly different from the above-mentioned electronic device 10 and the electronic device 10a in that it does not have the display device 13. The electronic device 10b may further include an optical member 15L and an optical member 15R.

As shown in FIGS. 16A and 16B, the electronic device 10b can be used in combination with another electronic device having a display unit. As the other electronic device, for example, an electronic device such as a smartphone or a portable game machine can be used. The other electronic device is connected to the arithmetic unit 19 via a connector (not shown) included in the electronic device 10b.

16A and 16B show a configuration example of a smartphone that can be used as an electronic device 31. The electronic device 31 has a display unit 33, and can function in the same manner as the display device 13 in FIG. 2A by being attached to the inside of the electronic device 10b via the opening 43.

Although FIGS. 15 and 16A show a configuration in which the second portion 12b has an opening 43, one aspect of the present invention is not limited to this. The opening 43 may be provided in any one or more of the first portion 12a to the fifth portion 12e. Further, the electronic device 10b does not have to have the opening 43. A part of the portion can be attached and detached, and the electronic device 31 can be attached to the inside of the electronic device 10b by removing the portion. For example, by making the first portion 12a removable, the user can remove the first portion 12a and attach the electronic device 31 inside the electronic device 10b. By not having the opening 43, it is possible to suppress the entry of external light into the electronic device 10b.

<Emotion estimation of user>
The method of estimating the emotion of the user will be described. Here, an example of using an image of a part including the mouth of the user will be described.

A block diagram showing an example of the configuration of the arithmetic unit 19 is shown in FIG. The arithmetic unit 19 includes a feature extraction unit 53, an estimation unit 54, and an information generation unit 55.

The feature extraction unit 53 extracts feature points from the image of the portion including the user's mouth output from the detection device 17, calculates the feature amount from the position of the feature point, and outputs the feature amount to the estimation unit 54. Has a function.

When the information acquired by the detection device 17 is an image of a portion including the mouth, for example, the upper end of the upper lip, the lower end of the lower lip, the right corner of the mouth, and the left corner of the mouth can be used as feature points.

Various algorithms can be applied as a feature extraction method by the feature extraction unit 53. For example, the feature extraction unit 53 can use algorithms such as SIFT (Scaled Invariant Features Transfer), SURF (Speeded Up Robot Features), and HOG (Histograms of Oriented Gradients).

A neural network can be used for feature extraction by the feature extraction unit 53. A schematic diagram of the neural network NN1 that can be used for the feature extraction unit 53 is shown in FIG. 18A. The neural network NN1 has an input layer 61, an intermediate layer 62, and an output layer 63. Although FIG. 18A shows a configuration in which the feature extraction unit 53 has three intermediate layers 62, one aspect of the present invention is not limited to this. The feature extraction unit 53 may have a configuration having one or more intermediate layers 62.

Data 71 is input to the neural network NN1. As the data 71, for example, image data captured by the detection device 17 can be used. The data 71 includes the coordinates of each pixel and the gradation value. Data 72 is output from the neural network NN1. The data 72 is data including the above-mentioned feature points.

The neural network NN1 has been learned in advance so as to extract the above-mentioned feature points from data 71 such as image data and output the coordinates thereof. In the neural network NN1, it is learned that the neuron value of the output layer 63 corresponding to the coordinates in which the above-mentioned feature points exist is increased by performing edge processing or the like using various filters in the intermediate layer 62.

The estimation unit 54 has a function of estimating the emotion of the user of the electronic device 10 from the information of the feature points input from the feature extraction unit 53 and outputting the estimated information to the information generation unit 55. A neural network can be used for the estimation by the estimation unit 54.

A schematic diagram of the neural network NN2 that can be used for the estimation unit 54 is shown in FIG. 18B. FIG. 18B shows a case where the estimation unit 54 estimates the emotion of the user of the electronic device 10. Further, an example is shown in which the neural network NN2 has substantially the same configuration as the neural network NN1. The number of neurons in the input layer 61 of the neural network NN2 can be smaller than that of the neural network NN1.

Data 72 generated by the feature extraction unit 53 is input to the neural network NN2. The data 72 includes information related to the coordinates of the extracted feature points.

As the data input to the neural network NN2, the processed data of the data 72 may be used. For example, a vector connecting any two feature points may be calculated, and this may be obtained for all feature points or some feature points as data to be input to the neural network NN2. Further, the calculated vector may be normalized data. In the following, the processed data of the data 72 output by the neural network NN1 is also referred to as the data 72.

Data 73 is output from the neural network NN2 to which the data 72 is input. The data 73 corresponds to the neuron value output from each neuron in the output layer 63. Each neuron in the output layer 63 is associated with one emotion. As shown in FIG. 18B, the data 73 is data including neuron values of neurons corresponding to predetermined emotions (joy, enjoyment, surprise, disgust, etc.).

The neural network NN2 has been learned in advance so as to estimate the degree of each emotion from the data 72 and output it as a neuron value. The neural network NN2 can estimate the user's emotion from the shape of the user's mouth.

FIG. 18C is a diagram schematically showing data 73. The height of the neuron value corresponding to each emotion indicates the estimated degree of emotion. Further, the estimation unit 54 may estimate another emotional degree from the estimated emotional degree. The data including the degree of the other emotion is referred to as data 74. FIG. 18C shows a case where the degree of emotion of interest is estimated from the degree of emotion such as joy, enjoyment, surprise, and disgust.

The degree of emotion of interest contained in the data 74 can be estimated, for example, by inputting the degree of emotion such as joy, enjoyment, surprise, and disgust contained in the data 73 into a predetermined formula. For example, the formula can be set so that the greater the degree of joy, enjoyment, and surprise, the greater the degree of interest, and the greater the degree of disgust, the smaller the degree of interest. ..

Emotions can be estimated without using a neural network. For example, the image of the portion including the user's mouth acquired by the detection device 17 may be compared with the template image, and the template matching method or the pattern matching method using the similarity may be used. In that case, the structure may not have the feature extraction unit 53.

The information generation unit 55 has a function of determining or generating information to be presented to the user based on the emotion estimated by the estimation unit 54 and outputting it to the display device 13. As a result, the display device 13 can present the information corresponding to the information generated by the information generation unit 55.

Note that the data 72 output from the feature extraction unit 53 may be directly input to the information generation unit 55 without being input to the estimation unit 54. For example, the emotion of the user can be detected by extracting the feature points by the feature extraction unit 53 without performing the estimation by the estimation unit 54. In such a case, the power consumption of the electronic device 10 can be reduced by directly inputting the data 72 output from the feature extraction unit 53 into the information generation unit 55.

Examples of images of the portion including the user's mouth that can be used as data 71 are shown in FIGS. 19A1 to 19A4. 19A1 to 19A4 show mouths in which the user's emotions have a high degree of "joy", a high degree of "fun", a high degree of "surprise", and a high degree of "disgust", respectively. An example of the image of the part including is shown. 19B1 to 19B4 show examples of extracting the feature points of the image of the portion including the mouth shown in FIGS. 19A1 to 19A4, respectively. In FIG 19B1 to FIG 19B4, and extracted upper _LP TL upper _lip, _LP _T, LP _{_TR,} the lower end _LP BL of the lower _lip, _LP _B, LP _{_BR,} the right corner of the mouth LP _R, and the corners of the mouth LP _L of the left as characteristic points An example is shown. The feature extraction unit 53 extracts these feature points and outputs the information of the feature points to the estimation unit 54. The estimation unit 54 estimates the user's emotion from the feature point information, and outputs the user's emotion information to the information generation unit 55. The information estimation unit determines or generates information to be presented to the user from the emotional information of the user, and outputs the information to be presented to the user to the display device 13. Then, the display device 13 can display the information to be presented to the user.

<Example of information to be presented to the user>
Hereinafter, an example of user information presented to an electronic device will be described.

Examples of the field of view of the user when using the electronic device which is one aspect of the present invention are shown in FIGS. 20A, 20B, 21A and 21B. 20A, 20B, 21A and 21B show an example of the field of view when the user is viewing an image of a tourist spot.

In FIGS. 20A and 20B, information 81 and information 82 that imitate the degree of excitement of the user are presented in the lower left of the field of view, respectively, overlaid on the displayed image.

Information 81 shown in FIG. 20A shows an example in which the degree of excitement of the user is determined to be high from the user data. For example, the temperature of the environment around the user's nose or mouth is above the specified temperature, the skin temperature around the nose or mouth is above the specified temperature, the humidity of the environment around the nose or mouth is above the specified humidity, and the volume of the voice is high. When the volume is equal to or higher than the predetermined volume, or the amount of sweating on the nose or under the nose is equal to or higher than the predetermined amount, it can be determined that the degree of excitement of the user is high.

User data may be presented as information 81. For example, the temperature of the environment around the user's nose or mouth can be presented as information 81. For example, the volume of voice can be presented as information 81.

Information 82 shown in FIG. 20B shows an example in which the degree of excitement of the user is determined to be low from the user data. For example, the temperature of the environment around the user's nose or mouth is below the specified temperature, the skin temperature around the nose or mouth is below the specified temperature, the humidity of the environment around the nose or mouth is below the specified humidity, and the volume of the voice is low. When the volume is lower than the predetermined volume, or the amount of sweating on the nose or under the nose is less than the predetermined amount, it can be determined that the degree of excitement of the user is low.

As described above, by presenting the degree of excitement of the user to the user, the user can recognize the degree of excitement of himself / herself and can enhance the immersive feeling. Alternatively, the user can make a choice such as taking a break by recognizing the degree of his / her excitement.

In FIGS. 21A and 21B, information 91 and information 92 imitating a character are presented in the lower left of the field of view, respectively, overlaid on the displayed image.

FIG. 21A shows an example in which the user's emotions are judged to have a high degree of "enjoyment". For example, in FIG. 18C, it corresponds to the case where the neuron value of "fun" is the highest. Further, FIG. 21A shows an example in which the degree of interest of the user is determined to be high. For example, in FIG. 18C, it corresponds to the case where the value exceeds the threshold value Th2.

FIG. 21B shows an example in which the user's emotions are judged to have low degrees of "joy", "enjoyment", "surprise", and "disgust". For example, in FIG. 18C, it corresponds to the case where all the neuron values do not exceed the threshold Th1. Further, FIG. 21B shows an example in which the degree of interest of the user is judged to be low. For example, in FIG. 18C, it corresponds to the case where the value does not exceed the threshold value Th2.

In FIG. 18C, when it is determined that the user's emotion has a high degree of "joy", for example, the information 93 shown in FIG. 21C can be presented. When it is determined that the user's emotions have a high degree of "surprise", for example, the information 94 shown in FIG. 21D can be presented. When it is determined that the user's emotions have a high degree of "disgust", for example, the information 95 shown in FIG. 21E can be presented.

Although FIGS. 21A and 21B show an example of presenting one piece of information, one aspect of the present invention is not limited to this. A plurality of pieces of information may be presented on top of the displayed image. For example, in FIG. 18C, when the neuron values of “fun” and “surprise” exceed the threshold value Th1, information corresponding to each can be presented. For example, one or more of information 91 and information 94 can be presented.

As described above, by presenting the user with a character having a facial expression that reflects the estimated emotions of the user, the user can recognize his / her own emotions and feel immersive. Can be enhanced. Alternatively, the user can notice emotions that he / she is not aware of. In addition, although the method of presenting emotional information to the user using the facial expression of the character has been explained here, the method is not limited to this, and various images can be used as long as the image visualizes the type and degree of emotion. it can.

<Example of housing configuration>
In the electronic device according to one aspect of the present invention, the housing 11 may have a space 41 located in the nose of the user, and the configuration and the shape of the portion other than the space 41 are not particularly limited.

The housing 11 can have a configuration in which a plurality of housings are connected. Examples of the configuration of the housing 11 are shown in FIGS. 22A, 22B, 22C, 23A and 23B.

FIG. 22A shows an example in which the housing 11 has the first part 11a to the fifth part 11e. 22A shows a configuration in which the first portion 12a to the fifth portion 12e shown in FIGS. 4A to 4C correspond to the first part 11a to the fifth part 11e, respectively. The first part 11a to the fifth part 11e are connected to each other to form the housing 11. Further, any one or more of the first part 11a to the fifth part 11e may be detachable from the housing 11.

FIG. 22B shows an example in which the housing 11 has a fourth part 11d, a fifth part 11e, and a sixth part 11f. FIG. 22B shows a configuration having a sixth part 11f in which the first portion 12a to the third portion 12c shown in FIGS. 4A to 4C are integrated. The fourth part 11d, the fifth part 11e, and the sixth part 11f are connected to each other to form the housing 11. Further, any one or more of the fourth part 11d, the fifth part 11e, and the sixth part 11f may be detachable from the housing 11.

FIG. 22C shows an example in which the housing 11 has the first part 11a and the seventh part 11g. FIG. 22C shows a configuration having a seventh part 11g in which the second portion 12b to the fifth portion 12e shown in FIGS. 4A to 4C are integrated. The first part 11a and the seventh part 11g are connected to each other to form the housing 11. Further, any one of the first part 11a and the seventh part 11g may be detachable from the housing 11.

FIG. 23A shows an example in which the housing 11 has a second part 11b, a third part 11c, and an eighth part 11h. FIG. 23A shows a configuration having an eighth part 11h in which the first portion 12a, the fourth portion 12d, and the fifth portion 12e shown in FIGS. 4A to 4C are integrated. The second part 11b, the third part 11c, and the eighth part 11h are connected to each other to form the housing 11. Further, any one or more of the second part 11b, the third part 11c and the eighth part 11h may be detachable from the housing 11.

FIG. 23B shows an example in which the housing 11 has a third part 11c and a ninth part 11i. FIG. 23B shows a configuration having a seventh part 11g in which the first portion 12a, the second portion 12b, the fourth portion 12d, and the fifth portion 12e shown in FIGS. 4A to 4C are integrated. There is. The third part 11c and the ninth part 11i are connected to each other to form the housing 11. Further, any of the third part 11c and the ninth part 11i may be detachable from the housing 11.

Note that, in FIGS. 22A to 22C, 23A and 23B, each part is shown separately for the sake of clarity of the figure.

By connecting a plurality of parts to form the housing 11, it is possible to easily load the parts (arithmetic unit 19 and the like) provided in the electronic device 10. For example, in the case of the housing 11 having the first part 11a to the fifth part 11e, the parts are loaded into each of the first part 11a to the fifth part 11e, and then the first part 11a to the first part 11a to the first part 11a to the fifth part 11e. The 5 parts 11e can be connected, and the productivity can be improved as compared with the case where the first part 11a to the fifth part 11e are connected and then the parts are loaded. Further, by making some parts detachable from the housing 11, for example, the parts can be easily replaced in the event of a failure.

The shape of the housing 11 is not particularly limited to the shape shown in FIG. 2A and the like. Each portion constituting the housing 11 may have a curved surface. An example of the housing 11 having a curved surface is shown in FIG. 24A. When the housing 11 has a curved surface, the design of the electronic device, which is one aspect of the present invention, can be enhanced. Further, since the housing 11 has a curved surface and the number of corners is reduced, injury can be prevented even if the user comes into contact with the housing 11, and the safety of the electronic device, which is one aspect of the present invention, can be enhanced. ..

The electronic device according to one aspect of the present invention may have a fixture 25 as shown in FIG. 24B. By having the fixture 25, the housing 11 can be fixed to the user's head. Although the fixture 25 is shown in a band shape in FIG. 24B, one aspect of the present invention is not limited to this. Further, although FIG. 24B shows a configuration in which one end of the fixture 25 is fixed to the housing 11 by the fastener 27, another configuration may be used. For example, it may be configured without the fastener 27.

This embodiment can be implemented by appropriately combining at least a part thereof with other embodiments described in the present specification.

(Embodiment 2)
In the present embodiment, a display device, a light source, an image pickup device, and the like that can be applied to the electronic device of one aspect of the present invention will be described.

<Display device configuration example 1>
FIG. 25 shows a block diagram showing a configuration example of a display device that can be applied to the electronic device of one aspect of the present invention. The display device 810 shown in FIG. 25 has a layer 820 and a layer 830 laminated above the layer 820. The layer 820 has a gate driver circuit 821, a source driver circuit 822, and a circuit 840. The layer 830 has pixels 834, and the pixels 834 are arranged in a matrix to form a pixel array 833. An interlayer insulator can be provided between the layer 820 and the layer 830. The layer 820 may be laminated above the layer 830.

The circuit 840 is electrically connected to the source driver circuit 822. The circuit 840 may be electrically connected to other circuits or the like.

Pixels 834 in the same row are electrically connected to the gate driver circuit 821 via wiring 831, and pixels 834 in the same column are electrically connected to the source driver circuit 822 via wiring 832. The wiring 831 has a function as a scanning line, and the wiring 832 has a function as a data line.

Note that FIG. 25 shows a configuration in which one row of pixels 834 is electrically connected by one wiring 831 and one row of pixels 834 is electrically connected by one wiring 832. One aspect of the present invention is not limited to this. For example, one row of pixels 834 may be electrically connected by two or more wires 831 or one row of pixels 834 may be electrically connected by two or more wires 832. That is, for example, one pixel 834 may be electrically connected to two or more scanning lines, or may be electrically connected to two or more data lines. Further, for example, one wiring 831 may be electrically connected to two or more rows of pixels 834, or one wiring 832 may be electrically connected to two or more columns of pixels 834. .. That is, for example, one wiring 831 may be shared by pixels 834 having two or more rows, or one wiring 832 may be shared by pixels 834 having two or more columns.

The gate driver circuit 821 has a function of generating a signal for controlling the operation of the pixel 834 and supplying the signal to the pixel 834 via the wiring 831. The source driver circuit 822 has a function of generating an image signal and supplying the signal to the pixel 834 via the wiring 832. The circuit 840 has, for example, a function of receiving image data that is the basis of an image signal generated by the source driver circuit 822 and supplying the received image data to the source driver circuit 822. Further, the circuit 840 has a function as a control circuit that generates a start pulse signal, a clock signal, and the like. In addition, the circuit 840 may be a circuit having a function that the gate driver circuit 821 and the source driver circuit 822 do not have.

The pixel array 833 has a function of displaying an image corresponding to the image signal supplied to the pixel 834 by the source driver circuit 822. Specifically, an image is displayed on the pixel array 833 by emitting light having a brightness corresponding to the image signal from the pixel 834.

In FIG. 25, the positional relationship between the layer 820 and the layer 830 is shown by a alternate long and short dash line and a white circle, and the white circles of the layer 820 and the white circles of the layer 830 overlap each other. ing. The same notation is used in other figures.

The display device 810 has an area in which the gate driver circuit 821 and the source driver circuit 822 provided in the layer 820 overlap with the pixel array 833. For example, the gate driver circuit 821 and the source driver circuit 822 have an area that overlaps with the pixel 834. The display device 810 can be made narrower and smaller by stacking the gate driver circuit 821, the source driver circuit 822, and the pixel array 833 so as to have regions that overlap each other. it can.

The gate driver circuit 821 and the source driver circuit 822 are not clearly separated and have overlapping regions. The area is referred to as area 823. By having the region 823, the occupied area of the gate driver circuit 821 and the source driver circuit 822 can be reduced. Therefore, even when the area of the pixel array 833 is small, the gate driver circuit 821 and the source driver circuit 822 can be provided without protruding from the pixel array 833. Alternatively, the area of the region of the gate driver circuit 821 and the source driver circuit 822 that does not overlap with the pixel array 833 can be reduced. From the above, the frame can be further narrowed and the size can be reduced as compared with the case where the area 823 is not provided.

The circuit 840 can be provided so as not to overlap the pixel array 833. The circuit 840 may be provided so as to have a region overlapping the pixel array 833.

FIG. 25 shows a configuration example in which one gate driver circuit 821 and one source driver circuit 822 are provided on the layer 820 and one pixel array 833 is provided on the layer 830. The pixel array 833 is provided on the layer 830. May be provided in plurality. That is, the pixel array provided on the layer 830 may be divided.

FIG. 25 shows a configuration example in which the circuit 840 is provided on the layer 820, but the circuit 840 may not be provided on the layer 820. FIG. 26 is a modification of the configuration shown in FIG. 25, and shows a configuration example of the display device 810 when the circuit 840 is provided on the layer 830. The elements constituting the circuit 840 may be dispersedly provided in the

layers

820 and 830.

<Structure example of pixel 834>
27A to 27E are diagrams for explaining the colors exhibited by the pixels 834 provided in the display device 810. As shown in FIG. 27A, a pixel 834 having a function of emitting red light (R), a pixel 834 having a function of emitting green light (G), and a pixel 834 having a function of emitting blue light (B) are provided. , Can be provided in a display device of an electronic device, which is one aspect of the present invention. Alternatively, as shown in FIG. 27B, a pixel 834 having a function of emitting cyan (C) light, a pixel 834 having a function of emitting magenta (M) light, and a function of emitting yellow (Y) light. The pixel 834 having the above may be provided in the display device 810.

As shown in FIG. 27C, a pixel 834 having a function of emitting red light (R), a pixel 834 having a function of emitting green light (G), a pixel 834 having a function of emitting blue light (B), and a pixel 834 having a function of emitting blue light (B). Pixels 834 having a function of emitting white light (W) may be provided in the display device 810. Alternatively, as shown in FIG. 27D, a pixel 834 having a function of emitting red light (R), a pixel 834 having a function of emitting green light (G), and a pixel 834 having a function of emitting blue light (B). , And pixel 834 having a function of emitting yellow (Y) light may be provided in the display device 810. Alternatively, as shown in FIG. 27E, a pixel 834 having a function of emitting cyan (C) light, a pixel 834 having a function of emitting magenta (M) light, and a function of emitting yellow (Y) light are provided. The display device 810 may be provided with a pixel 834 having a pixel 834 and a pixel 834 having a function of emitting white light (W).

As shown in FIGS. 27C and 27E, the brightness of the displayed image can be increased by providing the display device 810 with pixels 834 having a function of emitting white light (W). Further, as shown in FIG. 27D and the like, by increasing the types of colors emitted by the pixel 834, the reproducibility of intermediate colors can be improved, so that the display quality can be improved.

As shown in FIG. 27F, the display device 810 emits pixel 834 having a function of emitting red light (R), pixel 834 having a function of emitting green light (G), and blue light (B). In addition to the pixel 834 having the function of emitting infrared light (IR), the pixel 834 having the function of emitting infrared light (IR) may be provided. Alternatively, as shown in FIG. 27G, the display device 810 has a pixel 834 having a function of emitting cyan (C) light, a pixel 834 having a function of emitting magenta (M) light, and a yellow (Y) light. In addition to the pixel 834 having the function of emitting infrared light (IR), the pixel 834 having the function of emitting infrared light (IR) may be provided. Further, the display device 810 may have pixels 834 having a function of emitting white light (W) in addition to the pixels 834 shown in FIGS. 27F and 27G.

28A and 28B are circuit diagrams showing a configuration example of the pixel 834. The pixel 834 having the configuration shown in FIG. 28A includes a transistor 552, a transistor 554, a capacitance element 562, and a light emitting device 572. As the light emitting device 572, for example, an EL device utilizing electroluminescence can be applied. The EL device has a layer containing a luminescent compound (hereinafter, also referred to as an EL layer) between a pair of electrodes. When a potential difference larger than the threshold voltage of the EL device is generated between the pair of electrodes, holes are injected into the EL layer from the anode side and electrons are injected from the cathode side. The injected electrons and holes are recombined in the EL layer, and the luminescent substance contained in the EL layer emits light.

EL devices are distinguished by whether the light emitting material is an organic compound or an inorganic compound, and the former is generally called an organic EL device and the latter is called an inorganic EL device.

In an organic EL device, electrons are injected from one electrode and holes are injected into the EL layer from the other electrode by applying a voltage. Then, when those carriers (electrons and holes) are recombined, the luminescent organic compound forms an excited state, and when the excited state returns to the ground state, it emits light. Due to such a mechanism, such a light emitting device is called a current excitation type light emitting device.

In addition to the luminescent compound, the EL layer is a substance having a high hole injection property, a substance having a high hole transport property, a hole blocking material, a substance having a high electron transport property, a substance having a high electron transfer property, or a bipolar. It may have a sex substance (a substance having high electron transport property and hole transport property) and the like.

The EL layer can be formed by a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like.

Inorganic EL devices are classified into dispersed inorganic EL devices and thin film type inorganic EL devices according to their device configurations. The dispersed inorganic EL device has a light emitting layer in which particles of a light emitting material are dispersed in a binder, and the light emitting mechanism is donor-acceptor recombination type light emission utilizing a donor level and an acceptor level. The thin-film inorganic EL device has a structure in which a light emitting layer is sandwiched between dielectric layers and further sandwiched between electrodes, and the light emitting mechanism is localized light emission utilizing the inner-shell electron transition of metal ions.

The light emitting device may have at least one of a pair of electrodes transparent in order to extract light emission. Then, a transistor and a light emitting device are formed on the substrate, and a top emission (top emission) structure that extracts light emission from the surface opposite to the substrate, a bottom emission (bottom emission) structure that extracts light emission from the surface on the substrate side, and There is a double-sided emission (dual emission) light emitting device that extracts light from both sides, and any light emitting device with an injection structure can be applied.

As for the light emitting device other than the light emitting device 572, the same device as the light emitting device 572 can be used.

One of the source and drain of the transistor 552 is electrically connected to the wiring 832. The other of the source or drain of transistor 552 is electrically connected to one electrode of the capacitive element 562 and the gate of transistor 554. The other electrode of the capacitive element 562 is electrically connected to the wiring 835a. The gate of transistor 552 is electrically connected to wiring 831. One of the source and drain of the transistor 554 is electrically connected to the wiring 835a. The other of the source or drain of the transistor 554 is electrically connected to one electrode of the light emitting device 572. The other electrode of the light emitting device 572 is electrically connected to the wiring 835b. The potential VSS is supplied to the wiring 835a, and the potential VDD is supplied to the wiring 835b. The wiring 835a and the wiring 835b have a function as a power supply line.

In the pixel 834 having the configuration shown in FIG. 28A, the emission brightness from the light emitting device 572 is controlled by controlling the current flowing through the light emitting device 572 according to the potential supplied to the gate of the transistor 554.

FIG. 28B shows a configuration different from the pixel 834 having the configuration shown in FIG. 28A. In the pixel 834 having the configuration shown in FIG. 28B, one of the source and the drain of the transistor 552 is electrically connected to the wiring 832. The other of the source or drain of transistor 552 is electrically connected to one electrode of the capacitive element 562 and the gate of transistor 554. The gate of transistor 552 is electrically connected to wiring 831. One of the source and drain of the transistor 554 is electrically connected to the wiring 835a. The other of the source or drain of the transistor 554 is electrically connected to the other electrode of the capacitive element 562 and one electrode of the light emitting device 572. The other electrode of the light emitting device 572 is electrically connected to the wiring 835b. The potential VDD is supplied to the wiring 835a, and the potential VSS is supplied to the wiring 835b.

FIG. 29A is a configuration example of the pixel 834, which is different from the pixel 834 having the configuration shown in FIGS. 28A and 28B in that it has a memory. The pixel 834 having the configuration shown in FIG. 29A includes a transistor 511, a transistor 513, a transistor 521, a capacitive element 515, a capacitive element 517, and a light emitting device 572. Further, wiring 831_1 and wiring 831_2 are electrically connected to the pixel 834 as wiring 831 having a function as a scanning line, and wiring 832_1 and wiring 832_2 are electrically connected to the pixel 834 as wiring 832 having a function as a data line. There is.

One of the source and drain of the transistor 511 is electrically connected to the wiring 832_1. The other of the source or drain of the transistor 511 is electrically connected to one electrode of the capacitive element 515. The gate of transistor 511 is electrically connected to wiring 831_1. One of the source and drain of the transistor 513 is electrically connected to the wiring 832_2. The other of the source or drain of the transistor 513 is electrically connected to the other electrode of the capacitive element 515. The gate of transistor 513 is electrically connected to wiring 831_2. The other electrode of the capacitive element 515 is electrically connected to one electrode of the capacitive element 517. One electrode of the capacitive element 517 is electrically connected to the gate of the transistor 521. One of the source or drain of the transistor 521 is electrically connected to one electrode of the light emitting device 572. The other electrode of the capacitive element 517 is electrically connected to the wiring 535. The other side of the source or drain of transistor 521 is electrically connected to wire 537. The other electrode of the light emitting device 572 is electrically connected to the wiring 539.

In the present specification and the like, the voltage supplied to the light emitting device indicates the difference between the potential applied to one electrode of the light emitting device and the potential applied to the other electrode of the light emitting device.

Node N1 is a node in which the other electrode of the source or drain of the transistor 511 and one electrode of the capacitive element 515 are electrically connected. A node in which the other of the source or drain of the transistor 513, one electrode of the capacitive element 517, and the gate of the transistor 521 are electrically connected is referred to as a node N2. Further, in FIG. 29A, the circuit composed of the capacitance element 517, the transistor 521, and the light emitting device 572 is referred to as a circuit 401.

The wiring 535 can be a common wiring for, for example, all the pixels 834 provided in the display device 810. In this case, the potential supplied to the wiring 535 is a common potential. Further, a constant potential can be supplied to the wiring 537 and the wiring 539. For example, the wiring 537 can be supplied with a high potential, and the wiring 539 can be supplied with a low potential. The wiring 537 and the wiring 539 have a function as a power supply line.

The transistor 521 has a function of controlling the current supplied to the light emitting device 572. The capacitance element 517 has a function as a holding capacitance. The capacitive element 517 may be omitted.

Although FIG. 29A shows a configuration in which the anode side of the light emitting device 572 is electrically connected to the transistor 521, the transistor 521 may be electrically connected to the cathode side. In this case, the potential value of the wiring 537 and the potential value of the wiring 539 can be changed as appropriate.

The pixel 834 can hold the potential of the node N1 by turning off the transistor 511. Further, by turning off the transistor 513, the potential of the node N2 can be maintained. Further, by turning off the transistor 513 and writing a predetermined potential to the node N1 via the transistor 511, the potential of the node N2 is changed according to the displacement of the potential of the node N1 by the capacitive coupling via the capacitive element 515. Can be made to.

Here, a transistor having a metal oxide in the channel forming region (hereinafter, also referred to as an OS transistor) can be applied to the transistor 511 and the transistor 513. The bandgap of the metal oxide can be 2 eV or more, or 2.5 eV or more. Therefore, the leakage current (off current) of the OS transistor becomes extremely small in the non-conducting state. Therefore, by applying the OS transistor to the transistor 511 and the transistor 513, the potentials of the node N1 and the node N2 can be maintained for a long period of time.

As metal oxides, In-M-Zn oxide (element M is aluminum, gallium, yttrium, tin, copper, vanadium, beryllium, boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lantern, cerium, neodymium) , Hafnium, tantalum, tungsten, gallium, etc. (one or more) and the like may be used. In particular, as the element M, aluminum, gallium, yttrium, or tin may be used. Further, as the metal oxide, indium oxide, zinc oxide, In-Ga oxide, In-Zn oxide, Ga-Zn oxide, or gallium oxide may be used.

[Example of operation method of pixel 834]
Subsequently, an example of the operation method of the pixel 834 having the configuration shown in FIG. 29A will be described with reference to FIG. 29B. FIG. 29B is a timing chart relating to the operation of the pixel 834 having the configuration shown in FIG. 29A. For the sake of simplicity, the effects of various resistors such as wiring resistance, parasitic capacitance of transistors and wiring, and the threshold voltage of transistors are not considered here.

In the operation shown in FIG. 29B, one frame period is divided into a period T1 and a period T2. The period T1 is a period for writing the potential to the node N2, and the period T2 is a period for writing the potential to the node N1.

During the period T1, both the wiring 831_1 and the wiring 831_2 are supplied with a potential for turning on the transistor. _{Further, the potential V ref} , which is a fixed potential, is supplied to the wiring 832_1, and the potential V _w is supplied to the wiring 832_1.

_{The potential V ref} is supplied to the node N1 from the wiring 832_1 via the transistor 511. _{Further, the potential V w} is supplied to the node N2 from the wiring 832_2 via the transistor 513. Therefore, the capacitance element 515 is in a state where the _{potential difference V w} −V _{ref is held.}

Subsequently, in the period T2, the electric potential for turning on the transistor 511 is supplied to the wiring 831_1, and the potential for turning off the transistor 513 is supplied to the wiring 831_2. Further, the electric potential V _data is supplied to the wiring 832_1, and a predetermined constant potential is supplied to the wiring 832_1. The potential of the wiring 832_2 may be floating.

_{The potential V data} is supplied to the node N1 via the transistor 511. At this time, the potential of the node N2 changes by the potential dV according to the _{potential V data} due to the capacitive coupling by the capacitive element 515. That is, the _{potential obtained by adding the potential V w} and the potential dV is input to the circuit 401. Although dV is shown to be a positive value in FIG. 29B, it may be a negative value. That is, the potential V _data may be lower than the potential V _ref.

Here, the potential dV is roughly determined by the capacitance value of the capacitance element 515 and the capacitance value of the circuit 401. When the capacitance value of the capacitance element 515 is sufficiently larger than the capacitance value of the circuit 401, the potential dV becomes a potential close to the potential _{difference V data} −V _ref.

In this way, since the pixel 834 can generate a potential to be supplied to the node N2 by combining two types of data signals, the image displayed on the pixel array 833 can be corrected inside the pixel 834. Here, one of the two types of data signals can be the image signal described above, and the other of the two types of data signals can be, for example, a correction signal. _{For example, by supplying the potential V w} corresponding to the correction signal _{to the node N2 in the period T1 and then supplying the potential V data} corresponding to the image signal to the node N1 in the period T2, the image displayed on the pixel array 833 is displayed. , The image signal can be corrected by the correction signal. Not only the image signal but also the correction signal and the like can be generated by the source driver circuit 822 of the display device 810.

The pixel 834 having the configuration shown in FIG. 29A can have the potential of the node N2 exceeding the maximum potential that can be supplied to the wiring 832_1 and the wiring 832_2. As a result, a high voltage can be supplied to the light emitting device 572. Specifically, for example, the potential of the wiring 537 can be increased. Therefore, when the light emitting device 572 is an organic EL device, the light emitting device can have a tandem structure described later. Thereby, the current efficiency and the external quantum efficiency of the light emitting device 572 can be increased. Therefore, a high-luminance image can be displayed on the display device 810. In addition, the power consumption of the display device 810 can be reduced.

Note that the circuit is not limited to the circuit illustrated in FIG. 29A, and a transistor, a capacitive element, or the like may be added separately. For example, by adding one transistor and one capacitive element to the configuration shown in FIG. 29A, the number of nodes capable of holding the potential can be increased to three. That is, another node capable of holding the potential can be provided in the pixel 834 in addition to the node N1 and the node N2. As a result, the potential of the node N2 can be further increased. Therefore, a larger current can be passed through the light emitting device 572.

30A to 30E are diagrams showing a configuration example of a circuit 401 different from that of FIG. 30A. The circuit 401 having the configuration shown in FIG. 30A has a capacitance element 517, a transistor 521, and a light emitting device 572, similarly to the circuit 401 having the configuration shown in FIG. 29A.

In the circuit 401 having the configuration shown in FIG. 30A, the gate of the transistor 521 and one electrode of the capacitive element 517 are electrically connected to the node N2. One of the source and drain of the transistor 521 is electrically connected to the wiring 537. The other of the source or drain of the transistor 521 is electrically connected to the other electrode of the capacitive element 517. The other electrode of the capacitive element 517 is electrically connected to one electrode of the light emitting device 572. The other electrode of the light emitting device 572 is electrically connected to the wiring 539.

The circuit 401 having the configuration shown in FIG. 30B also has a capacitance element 517, a transistor 521, and a light emitting device 572, similarly to the circuit 401 having the configuration shown in FIG. 29A.

In the circuit 401 having the configuration shown in FIG. 30B, the gate of the transistor 521 and one electrode of the capacitive element 517 are electrically connected to the node N2. One electrode of the light emitting device 572 is electrically connected to the wiring 537. The other electrode of the light emitting device 572 is electrically connected to one of the source or drain of the transistor 521. The other of the source or drain of the transistor 521 is electrically connected to the other electrode of the capacitive element 517. The other electrode of the capacitive element 517 is electrically connected to the wiring 539.

FIG. 30C shows a configuration example of the circuit 401 when the transistor 525 is added to the circuit 401 shown in FIG. 30A. One of the source or drain of the transistor 525 is electrically connected to the other of the source or drain of the transistor 521 and the other electrode of the capacitive element 517. The other of the source or drain of the transistor 525 is electrically connected to one electrode of the light emitting device 572. The gate of transistor 525 is electrically connected to wiring 541. The wiring 541 has a function as a scanning line for controlling the continuity of the transistor 525.

In the pixel 834 having the circuit 401 having the configuration shown in FIG. 30C, even if the potential of the node N2 becomes equal to or higher than the threshold voltage of the transistor 521, no current flows through the light emitting device 572 unless the transistor 525 is turned on. Therefore, it is possible to suppress a malfunction of the display device 810.

FIG. 30D shows a configuration example of the circuit 401 when the transistor 527 is added to the circuit 401 shown in FIG. 30C. One of the source or drain of transistor 527 is electrically connected to the other of the source or drain of transistor 521. The other of the source or drain of transistor 527 is electrically connected to wire 543. The gate of transistor 527 is electrically connected to wiring 545. The wiring 545 has a function as a scanning line for controlling the continuity of the transistor 527.

The wiring 543 can be electrically connected to a supply source of a specific potential such as a reference potential. That is, the wiring 543 has a function as a power supply line. By supplying a specific potential from the wiring 543 to the other of the source or drain of the transistor 521, it is possible to stabilize the writing of the image signal to the pixel 834.

Wiring 543 can be electrically connected to circuit 520. The circuit 520 can have one or more of the above-mentioned specific potential supply source, a function of acquiring the electrical characteristics of the transistor 521, and a function of generating a correction signal.

The circuit 401 having the configuration shown in FIG. 30E includes a capacitance element 517, a transistor 521, a transistor 529, and a light emitting device 572.

In the circuit 401 having the configuration shown in FIG. 30E, the gate of the transistor 521 and one electrode of the capacitive element 517 are electrically connected to the node N2. One of the source and drain of the transistor 521 is electrically connected to the wiring 537. One of the source or drain of the transistor 529 is electrically connected to the wiring 543.

The other electrode of the capacitive element 517 is electrically connected to the other of the source or drain of the transistor 521. The other of the source or drain of transistor 521 is electrically connected to the other of the source or drain of transistor 529. The other of the source or drain of the transistor 529 is electrically connected to one electrode of the light emitting device 572.

The gate of the transistor 529 is electrically connected to the wiring 831_1. The other electrode of the light emitting device 572 is electrically connected to the wiring 539.

<Display device configuration example 2>
FIG. 31 is a block diagram showing a configuration example of the display device 810 when the pixel 834 has the configuration shown in FIG. 29A. The display device 810 having the configuration shown in FIG. 31 is provided with a demultiplexer circuit 824 in addition to the components of the display device 810 shown in FIG. 25. The demultiplexer circuit 824 can be provided, for example, in layer 820, as shown in FIG. The number of demultiplexer circuits 824 can be, for example, the same as the number of columns of pixels 834 provided in the pixel array 833.

The gate driver circuit 821 is electrically connected to the pixel 834 via the wiring 831-1. The gate driver circuit 821 is electrically connected to the pixel 834 via wiring 831-2. The wiring 831-1 and the wiring 831-2 have a function as scanning lines.

The source driver circuit 822 is electrically connected to the input terminal of the demultiplexer circuit 824. The first output terminal of the demultiplexer circuit 824 is electrically connected to the pixel 834 via the wiring 832-1. The second output terminal of the demultiplexer circuit 824 is electrically connected to the pixel 834 via the wiring 832-2. The wiring 832-1 and the wiring 832-2 have a function as a data line.

The source driver circuit 822 and the demultiplexer circuit 824 may be collectively referred to as a source driver circuit. That is, the demultiplexer circuit 824 may be included in the source driver circuit 822.

In the display device 810 having the configuration shown in FIG. 31, the source driver circuit 822 has a function of generating the image signal S1 and the image signal S2. The demultiplexer circuit 824 has a function of supplying the image signal S1 to the pixel 834 via the wiring 832-1 and a function of supplying the image signal S2 to the pixel 834 via the wiring 832-2. Here, assuming that the display device 810 having the configuration shown in FIG. 31 is operated by the method shown in FIG. 29B, the potential V _data can be set to the potential corresponding to the image signal S1, and the potential V _w corresponds to the image signal S2. Can be the potential to be.

As shown in FIG. 29B, _{by supplying the potential V w} _{to the node N2 and then supplying the potential V data} to the node N1, the potential of the node N2 becomes “V _w + dV”. Here, as described above, the potential dV is the potential corresponding to the potential _{V data.} Therefore, the image signal S1 can be added to the image signal S2. That is, the image signal S1 can be superimposed on the image signal S2.

_{The magnitudes of the potential V data} corresponding to the image signal S1 and _{the potential V w} corresponding to the image signal S2 are limited according to the withstand voltage of the source driver circuit 822 and the like. Therefore, by superimposing the image signal S1 and the image signal S2, an image corresponding to the image signal having a potential higher than the potential that can be output by the source driver circuit 822 can be displayed on the pixel array 833. As a result, a large current can be passed through the light emitting device 572, so that a high-luminance image can be displayed on the pixel array 833. In addition, the dynamic range, which is the range of brightness of the image that can be displayed by the pixel array 833, can be expanded.

The image corresponding to the image signal S1 and the image corresponding to the image signal S2 may be the same or different. When the image corresponding to the image signal S1 and the image corresponding to the image signal S2 are the same, the pixel array 833 has the brightness of the image corresponding to the image signal S1 and the brightness of the image corresponding to the image signal S2. An image with higher brightness can be displayed.

FIG. 32 shows a case where the image P1 corresponding to the image signal S1 contains only characters and the image P2 corresponding to the image signal S2 contains a picture and characters. In this case, by superimposing the image P1 and the image P2, the brightness of the characters can be increased, and for example, the characters can be emphasized. Further, as shown in FIG. 29B, after the potential V _w is written to the node N2, the potential of the node N2 _{changes according to the potential V data.} Therefore, when rewriting _{the potential V w} corresponding to the image signal S2, , The potential V _data of the image signal S1 must be written again. On the other hand, _{when rewriting the potential V data} , it is not necessary to rewrite _{the potential V w} as long as the electric charge written in the node N2 during the period T1 shown in FIG. 29B is held without leaking from the transistor 513 or the like. Therefore, in the case shown in FIG. 32, the brightness of the characters can be adjusted by adjusting the value _{of the potential V data.}

_{Here, as described above, when rewriting the potential V w} corresponding to the image signal S2, _{the potential V data} corresponding to the image signal S1 must be written again. On the other hand, _{when rewriting the potential V data} , it is not necessary to rewrite the potential V _w. Therefore, it is preferable that the image P2 is an image that is rewritten less frequently than the image P1. Although FIG. 32 shows an example in which the image P1 contains only characters and the image P2 contains pictures and characters, one aspect of the present invention is not limited to this.

<Example of cross-sectional configuration of display device>
FIG. 33 is a cross-sectional view showing a configuration example of the display device 810. The display device 810 has a substrate 701 and a substrate 705, and the substrate 701 and the substrate 705 are bonded to each other by a sealing material 712.

As the substrate 701, a single crystal semiconductor substrate such as a single crystal silicon substrate can be used. A semiconductor substrate other than the single crystal semiconductor substrate may be used as the substrate 701.

A transistor 441 and a transistor 601 are provided on the substrate 701. The transistor 441 can be a transistor provided in the circuit 840. The transistor 601 can be a transistor provided in the gate driver circuit 821 or a transistor provided in the source driver circuit 822. That is, the transistor 441 and the transistor 601 can be provided on the layer 820 shown in FIG. 25 and the like.

The transistor 441 is composed of a conductor 443 having a function as a gate electrode, an insulator 445 having a function as a gate insulator, and a part of a substrate 701, and is a semiconductor region 447 including a channel forming region and a source region. Alternatively, it has a low resistance region 449a that functions as one of the drain regions and a low resistance region 449b that functions as the other of the source region or the drain region. The transistor 441 may be either a p-channel type or an n-channel type.

The transistor 441 is electrically separated from other transistors by the element separation layer 403. FIG. 33 shows a case where the transistor 441 and the transistor 601 are electrically separated by the element separation layer 403. The element separation layer 403 can be formed by using a LOCOS (LOCOxidation of Silicon) method, an STI (Shallow Trench Isolation) method, or the like.

Here, in the transistor 441 shown in FIG. 33, the semiconductor region 447 has a convex shape. Further, the side surface and the upper surface of the semiconductor region 447 are provided so as to be covered with the conductor 443 via the insulator 445. Note that FIG. 33 does not show how the conductor 443 covers the side surface of the semiconductor region 447. Further, a material for adjusting the work function can be used for the conductor 443.

A transistor having a convex shape in the semiconductor region, such as the transistor 441, can be called a fin type transistor because the convex portion of the semiconductor substrate is used. In addition, an insulator which is in contact with the upper part of the convex portion and has a function as a mask for forming the convex portion may be provided. Further, although FIG. 33 shows a configuration in which a part of the substrate 701 is processed to form a convex portion, the SOI substrate may be processed to form a semiconductor having a convex shape.

The configuration of the transistor 441 shown in FIG. 33 is an example, and is not limited to the configuration, and may be an appropriate configuration according to the circuit configuration, the operation method of the circuit, and the like. For example, the transistor 441 may be a planar transistor.

The transistor 601 can have the same configuration as the transistor 441.

In addition to the element separation layer 403, the transistor 441 and the transistor 601 on the substrate 701, an insulator 405, an insulator 407, an insulator 409, and an insulator 411 are provided. The conductor 451 is embedded in the insulator 405, the insulator 407, the insulator 409, and the insulator 411. Here, the height of the upper surface of the conductor 451 and the height of the upper surface of the insulator 411 can be made about the same.

Insulator 413 and insulator 415 are provided on the conductor 451 and the insulator 411. Further, the conductor 457 is embedded in the insulator 413 and the insulator 415.

Insulator 417 and insulator 419 are provided on the conductor 457 and the insulator 415. Further, the conductor 459 is embedded in the insulator 417 and the insulator 419.

Insulator 421 and insulator 214 are provided on the conductor 459 and the insulator 419. The conductor 453 is embedded in the insulator 421 and in the insulator 214. Here, the height of the upper surface of the conductor 453 and the height of the upper surface of the insulator 214 can be made about the same.

Insulator 216 is provided on the conductor 453 and on the insulator 214. A conductor 455 is embedded in the insulator 216. Here, the height of the upper surface of the conductor 455 and the height of the upper surface of the insulator 216 can be made about the same.

Insulator 222, insulator 224, insulator 254, insulator 244, insulator 280, insulator 274, and insulator 281 are provided on the conductor 455 and the insulator 216. The conductor 305 is embedded in the insulator 222, the insulator 224, the insulator 254, the insulator 244, the insulator 280, the insulator 274, and the insulator 281. Here, the height of the upper surface of the conductor 305 and the height of the upper surface of the insulator 281 can be made about the same.

The insulator 361 is provided on the conductor 305 and the insulator 281. A conductor 317 and a conductor 337 are embedded in the insulator 361. Here, the height of the upper surface of the conductor 337 and the height of the upper surface of the insulator 361 can be made about the same.

The insulator 363 is provided on the conductor 337 and the insulator 361. A conductor 347, a conductor 353, a conductor 355, and a conductor 357 are embedded in the insulator 363. Here, the height of the upper surface of the conductor 353, the conductor 355, and the conductor 357 can be made the same as the height of the upper surface of the insulator 363.

The connection electrode 760 is provided on the conductor 353, the conductor 355, the conductor 357, and the insulator 363. Further, an anisotropic conductor 780 is provided so as to be electrically connected to the connection electrode 760, and an FPC (Flexible Printed Circuit) 716 is provided so as to be electrically connected to the anisotropic conductor 780. Various signals and the like are supplied to the display device 810 from the outside of the display device 810 by the FPC 716.

As shown in FIG. 33, the low resistance region 449b having a function as the other of the source region and the drain region of the transistor 441 includes a conductor 451 and a conductor 457, a conductor 459, a conductor 453, a conductor 455, and a conductor. It is electrically connected to the FPC 716 via 305, conductor 317, conductor 337, conductor 347, conductor 353, conductor 355, conductor 357, connection electrode 760, and anisotropic conductor 780. .. Here, FIG. 33 shows three conductors having a function of electrically connecting the connection electrode 760 and the conductor 347, that is, the conductor 353, the conductor 355, and the conductor 357, which is one of the present inventions. The aspect is not limited to this. The number of conductors having a function of electrically connecting the connection electrode 760 and the conductor 347 may be one, two, or four or more. The contact resistance can be reduced by providing a plurality of conductors having a function of electrically connecting the connection electrode 760 and the conductor 347.

A transistor 750 is provided on the insulator 214. The transistor 750 can be a transistor provided in the pixel 834. That is, the transistor 750 can be provided on the layer 830 shown in FIG. 25 and the like. As the transistor 750, an OS transistor can be used. The OS transistor has a feature that the off-current is extremely low. Therefore, since the holding time of the image signal or the like can be lengthened, the frequency of the refresh operation can be reduced. Therefore, the power consumption of the display device 810 can be reduced.

Conductors

301a and 301b are embedded in the insulator 254, the insulator 244, the insulator 280, the insulator 274, and the insulator 281. The conductor 301a is electrically connected to one of the source or drain of the transistor 750, and the conductor 301b is electrically connected to the other of the source or drain of the transistor 750. Here, the height of the upper surfaces of the

conductors

301a and 301b and the height of the upper surfaces of the insulator 281 can be made about the same.

A conductor 311, a conductor 313, a conductor 331, a capacitance element 790, a conductor 333, and a conductor 335 are embedded in the insulator 361. The

conductors

311 and 313 are electrically connected to the transistor 750 and have a function as wiring. The conductor 333 and the conductor 335 are electrically connected to the capacitive element 790. Here, the height of the upper surface of the conductor 331, the conductor 333, and the conductor 335 can be made the same as the height of the upper surface of the insulator 361.

Conductor 341, conductor 343, and conductor 351 are embedded in the insulator 363. Here, the height of the upper surface of the conductor 351 and the height of the upper surface of the insulator 363 can be made about the same.

Insulator 405, Insulator 407, Insulator 409, Insulator 411, Insulator 413, Insulator 415, Insulator 417, Insulator 419, Insulator 421, Insulator 214, Insulator 280, Insulator 274, Insulator The 281, the insulator 361, and the insulator 363 have a function as an interlayer film, and may have a function as a flattening film that covers the uneven shape below each of them. For example, the upper surface of the insulator 363 may be flattened by a flattening treatment using a chemical mechanical polishing (CMP) method or the like in order to improve the flatness.

As shown in FIG. 33, the capacitive element 790 has a lower electrode 321 and an upper electrode 325. Further, an insulator 323 is provided between the lower electrode 321 and the upper electrode 325. That is, the capacitive element 790 has a laminated structure in which an insulator 323 that functions as a dielectric is sandwiched between a pair of electrodes. Although FIG. 33 shows an example in which the capacitance element 790 is provided on the insulator 281, the capacitance element 790 may be provided on an insulator different from the insulator 281.

FIG. 33 shows an example in which the conductor 301a, the conductor 301b, and the conductor 305 are formed in the same layer. Further, an example is shown in which the conductor 311 and the conductor 313, the conductor 317, and the lower electrode 321 are formed in the same layer. Further, an example is shown in which the conductor 331, the conductor 333, the conductor 335, and the conductor 337 are formed in the same layer. Further, an example is shown in which the conductor 341, the conductor 343, and the conductor 347 are formed in the same layer. Further, an example is shown in which the conductor 351 and the conductor 353, the conductor 355, and the conductor 357 are formed in the same layer. By forming the plurality of conductors in the same layer in this way, the manufacturing process of the display device 810 can be simplified, so that the display device 810 can be made inexpensive. In addition, these may be formed in different layers, and may have different kinds of materials.

The display device 810 shown in FIG. 33 has a light emitting device 572. The light emitting device 572 has a conductor 772, an EL layer 786, and a conductor 788. The conductor 788 is provided on the substrate 705 side and has a function as a common electrode. Further, the conductor 772 is electrically connected to the other of the source or drain of the transistor 750 via the conductor 351 and the conductor 341, the conductor 331, the conductor 313, and the conductor 301b. The conductor 772 is formed on the insulator 363 and has a function as a pixel electrode. Further, the EL layer 786 has an organic compound or an inorganic compound such as a quantum dot.

Examples of materials that can be used for organic compounds include fluorescent materials and phosphorescent materials. Examples of materials that can be used for quantum dots include colloidal quantum dot materials, alloy-type quantum dot materials, core-shell type quantum dot materials, and core-type quantum dot materials.

In the display device 810 shown in FIG. 33, an insulator 730 is provided on the insulator 363. Here, the insulator 730 can be configured to cover a part of the conductor 772. Further, the light emitting device 572 has a translucent conductor 788, and can be a top emission type light emitting device. The light emitting device 572 may have a bottom emission structure that emits light to the conductor 772 side, or a dual emission structure that emits light to both the conductor 772 and the conductor 788.

The light emitting device 572 can have a microcavity structure, which will be described in detail later. As a result, light of a predetermined color (for example, RGB) can be extracted without providing a colored layer, and the display device 810 can perform color display. By adopting a configuration in which the colored layer is not provided, it is possible to suppress the absorption of light by the colored layer. As a result, the display device 810 can display a high-brightness image, and the power consumption of the display device 810 can be reduced. Even when the EL layer 786 is formed in an island shape for each pixel or in a striped shape for each pixel row, that is, when the EL layer 786 is formed by painting separately, it is possible to configure the structure without providing the colored layer.

The light-shielding layer 738 is provided so as to have a region overlapping with the insulator 730. Further, the light-shielding layer 738 is covered with an insulator 734. Further, the space between the light emitting device 572 and the insulator 734 is filled with a sealing layer 732.

Further, a structure 778 is provided between the insulator 730 and the EL layer 786. Further, a structure 778 is provided between the insulator 730 and the insulator 734. The structure 778 is a columnar spacer and has a function of controlling the distance (cell gap) between the substrate 701 and the substrate 705. A spherical spacer may be used as the structure 778.

A light-shielding layer 738 and an insulator 734 in contact with the light-shielding layer 738 are provided on the substrate 705 side. The light-shielding layer 738 has a function of blocking light emitted from an adjacent region. Alternatively, the light-shielding layer 738 has a function of blocking external light from reaching the transistor 750 or the like.

FIG. 34 is a modified example of the display device 810 shown in FIG. 33, and is different from the display device 810 shown in FIG. 33 in that a colored layer 736 is provided. By providing the colored layer 736, the color purity of the light extracted from the light emitting device 572 can be increased. As a result, a high-quality image can be displayed on the display device 810. Further, for example, all the light emitting devices 572 of the display device 810 can be light emitting devices that emit white light, so that the EL layer 786 does not have to be formed by painting separately, and the display device 810 has a high definition. can do.

In FIGS. 33 and 34, the transistor 441 and the transistor 601 are provided so as to form a channel forming region inside the substrate 701, and the OS transistor is provided by laminating the transistor 441 and the transistor 601. However, one aspect of the present invention is not limited to this. FIG. 35 is a modification of FIG. 33, and FIG. 36 is a modification of FIG. 34, in which the transistor 750 is provided by being laminated on the

OS transistors

602 and 603 instead of the transistor 441 and the transistor 601. This point is different from the display device 810 having the configuration shown in FIGS. 33 and 34. That is, the display device 810 having the configuration shown in FIGS. 35 and 36 is provided with OS transistors stacked.

An insulator 613 and an insulator 614 are provided on the substrate 701, and a transistor 602 and a transistor 603 are provided on the insulator 614. A transistor or the like may be provided between the substrate 701 and the insulator 613. For example, a transistor having the same configuration as the transistor 441 and the transistor 601 shown in FIGS. 33 and 34 may be provided between the substrate 701 and the insulator 613.

The transistor 602 can be a transistor provided in the circuit 840. The transistor 603 can be a transistor provided in the gate driver circuit 821 or a transistor provided in the source driver circuit 822. That is, the transistor 602 and the transistor 603 can be provided on the layer 820 shown in FIG. 25 and the like. As shown in FIG. 26, when the circuit 840 is provided on the layer 830, the transistor 602 can be provided on the layer 830.

The transistor 602 and the transistor 603 can be a transistor having the same configuration as the transistor 750. The transistor 602 and the transistor 603 may be OS transistors having a configuration different from that of the transistor 750.

In addition to the transistor 602 and the transistor 603, an insulator 616, an insulator 622, an insulator 624, an insulator 654, an insulator 644, an insulator 680, an insulator 674, and an insulator 681 are provided on the insulator 614. .. The conductor 461 is embedded in the insulator 654, the insulator 644, the insulator 680, the insulator 674, and the insulator 681. Here, the height of the upper surface of the conductor 461 and the height of the upper surface of the insulator 681 can be made about the same.

The insulator 501 is provided on the conductor 461 and the insulator 681. A conductor 463 is embedded in the insulator 501. Here, the height of the upper surface of the conductor 463 and the height of the upper surface of the insulator 501 can be made about the same.

The insulator 503 is provided on the conductor 463 and the insulator 501. A conductor 465 is embedded in the insulator 503. Here, the height of the upper surface of the conductor 465 and the height of the upper surface of the insulator 503 can be made about the same.

The insulator 505 is provided on the conductor 465 and the insulator 503. Further, the conductor 467 is embedded in the insulator 505.

The insulator 507 is provided on the conductor 467 and the insulator 505. A conductor 469 is embedded in the insulator 507. Here, the height of the upper surface of the conductor 469 and the height of the upper surface of the insulator 507 can be made about the same.

The insulator 509 is provided on the conductor 469 and the insulator 507. Further, the conductor 471 is embedded in the insulator 509.

Insulator 421 and insulator 214 are provided on the conductor 471 and the insulator 509. The conductor 453 is embedded in the insulator 421 and in the insulator 214. Here, the height of the upper surface of the conductor 453 and the height of the upper surface of the insulator 214 can be made about the same.

As shown in FIGS. 35 and 36, one of the source or drain of the transistor 602 is a conductor 461, a conductor 463, a conductor 465, a conductor 467, a conductor 469, a conductor 471, a conductor 453, or a conductor. Electrically with FPC716 via 455, conductor 305, conductor 317, conductor 337, conductor 347, conductor 353, conductor 355, conductor 357, connection electrode 760, and anisotropic conductor 780. It is connected.

The insulator 613, the insulator 614, the insulator 680, the insulator 674, the insulator 681, the insulator 501, the insulator 503, the insulator 505, the insulator 507, and the insulator 509 have a function as an interlayer film. , It may have a function as a flattening film that covers each of the lower uneven shapes.

By configuring the display device 810 as shown in FIGS. 35 and 36, all the transistors of the display device 810 can be used as OS transistors while the display device 810 is narrowed and downsized. Thereby, for example, the transistor provided in the layer 820 and the transistor provided in the layer 830 can be manufactured by using the same device. Therefore, the manufacturing cost of the display device 810 can be reduced, and the display device 810 can be made inexpensive.

<Configuration example of light emitting device>
37A to 37E are diagrams showing a configuration example of the light emitting device 572. FIG. 37A shows a structure (single structure) in which the EL layer 786 is sandwiched between the conductor 772 and the conductor 788. As described above, the EL layer 786 contains a light emitting material, for example, a light emitting material which is an organic compound.

FIG. 37B is a diagram showing a laminated structure of EL layer 786. Here, in the light emitting device 572 having the structure shown in FIG. 37B, the conductor 772 has a function as an anode, and the conductor 788 has a function as a cathode.

The EL layer 786 has a structure in which the hole injection layer 721, the hole transport layer 722, the light emitting layer 723, the electron transport layer 724, and the electron injection layer 725 are sequentially laminated on the conductor 772. When the conductor 772 has a function as a cathode and the conductor 788 has a function as an anode, the stacking order is reversed.

The light emitting layer 723 has a light emitting material or a plurality of materials in an appropriate combination, and can be configured to obtain fluorescent light emission or phosphorescent light emission exhibiting a desired light emitting color. Further, the light emitting layer 723 may have a laminated structure having different light emitting colors. In this case, different materials may be used for the luminescent substance and other substances used for each of the laminated light emitting layers.

In the light emitting device 572, for example, the conductor 772 shown in FIG. 37B is used as a reflecting electrode, the conductor 788 is used as a semi-transmissive / semi-reflective electrode, and the EL layer 786 has a micro-optical resonator (microcavity) structure. The light emitted from the light emitting layer 723 can be resonated between both electrodes to enhance the light emitted through the conductor 788.

When the conductor 772 of the light emitting device 572 is a reflective electrode having a laminated structure of a conductive material having a reflective property and a conductive material having a translucent property (transparent conductive film), the thickness of the transparent conductive film is formed. Optical adjustment can be performed by controlling. Specifically, the distance between the electrodes of the conductor 772 and the conductor 788 is adjusted to be close to mλ / 2 (where m is a natural number) with respect to the wavelength λ of the light obtained from the light emitting layer 723. Is preferable.

In order to amplify the desired light (wavelength: λ) obtained from the light emitting layer 723, the optical distance from the conductor 772 to the region (light emitting region) where the desired light of the light emitting layer is obtained, and the light emitting layer from the conductor 788. It is preferable to adjust the optical distance to the region (light emitting region) where the desired light of 723 is obtained so as to be close to (2 m'+ 1) λ / 4 (where m'is a natural number). The light emitting region referred to here means a recombination region of holes and electrons in the light emitting layer 723.

By performing such optical adjustment, the spectrum of a specific monochromatic light obtained from the light emitting layer 723 can be narrowed, and light emission with good color purity can be obtained.

However, in the above case, the optical distance between the conductor 772 and the conductor 788 can be said to be strictly the total thickness from the reflection region of the conductor 772 to the reflection region of the conductor 788. However, since it is difficult to strictly determine the reflection region of the conductor 772 and the conductor 788, the above-mentioned effect can be sufficiently obtained by assuming an arbitrary position of the conductor 772 and the conductor 788 as the reflection region. It shall be possible. Further, the optical distance between the conductor 772 and the light emitting layer from which the desired light can be obtained is, strictly speaking, the optical distance between the reflection region of the conductor 772 and the light emitting region in the light emitting layer where the desired light can be obtained. be able to. However, since it is difficult to precisely determine the reflection region of the conductor 772 and the light emission region of the light emitting layer from which the desired light can be obtained, the reflection region and the desired light can be obtained at an arbitrary position of the conductor 772. It is assumed that the above-mentioned effect can be sufficiently obtained by assuming that an arbitrary position of the light emitting layer is a light emitting region.

Since the light emitting device 572 shown in FIG. 37B has a microcavity structure, it is possible to extract light of different wavelengths (monochromatic light) even if it has the same EL layer. Therefore, it is not necessary to separately paint (for example, RGB) to obtain different emission colors. Therefore, it is easy to realize high definition. It can also be combined with a colored layer. Further, since it is possible to increase the emission intensity in the front direction of a specific wavelength, it is possible to reduce the power consumption.

The light emitting device 572 shown in FIG. 37B does not have to have a microcavity structure. In this case, the light emitting layer 723 has a structure that emits white light, and by providing the colored layer, light of a predetermined color (for example, RGB) can be extracted. Further, when forming the EL layer 786, if different coatings are performed to obtain different emission colors, light of a predetermined color can be taken out without providing a colored layer.

At least one of the conductor 772 and the conductor 788 can be a translucent electrode (transparent electrode, semi-transmissive / semi-reflective electrode, etc.). When the electrode having translucency is a transparent electrode, the transmittance of visible light of the transparent electrode is 40% or more. In the case of a semi-transmissive / semi-reflective electrode, the reflectance of visible light of the semi-transmissive / semi-reflective electrode is 20% or more and 80% or less, preferably 40% or more and 70% or less. The resistivity of these electrodes ^{is preferably 1 × 10 -2} Ωcm or less.

When the conductor 772 or the conductor 788 is a reflective electrode (reflecting electrode), the visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. And. The resistivity of this electrode ^{is preferably 1 × 10 -2} Ωcm or less.

The configuration of the light emitting device 572 may be the configuration shown in FIG. 37C. In FIG. 37C, two EL layers (EL layer 786a and EL layer 786b) are provided between the conductor 772 and the conductor 788, and a charge generation layer 792 is provided between the EL layer 786a and the EL layer 786b. The light emitting device 572 having a laminated structure (tandem structure) is shown. By making the light emitting device 572 a tandem structure, the current efficiency and the external quantum efficiency of the light emitting device 572 can be improved. Therefore, a high-luminance image can be displayed on the display device 810. In addition, the power consumption of the display device 810 can be reduced. Here, the EL layer 786a and the EL layer 786b can have the same configuration as the EL layer 786 shown in FIG. 37B.

When a voltage is supplied between the conductor 772 and the conductor 788, the charge generation layer 792 injects electrons into one of the EL layer 786a and the EL layer 786b, and injects holes into the other. Has the function of Therefore, when a voltage is supplied so that the potential of the conductor 772 is higher than the potential of the conductor 788, electrons are injected from the charge generation layer 792 into the EL layer 786a, and holes are injected from the charge generation layer 792 into the EL layer 786b. Will be done.

The charge generation layer 792 preferably transmits visible light (specifically, the visible light transmittance of the charge generation layer 792 is 40% or more) from the viewpoint of light extraction efficiency. Further, the conductivity of the charge generation layer 792 may be lower than the conductivity of the conductor 772 or the conductivity of the conductor 788.

The configuration of the light emitting device 572 may be the configuration shown in FIG. 37D. In FIG. 37D, three EL layers (EL layer 786a, EL layer 786b, and EL layer 786c) are provided between the conductor 772 and the conductor 788, and between the EL layer 786a and the EL layer 786b, A tandem-structured light emitting device 572 having a charge generation layer 792 between the EL layer 786b and the EL layer 786c is shown. Here, the EL layer 786a, the EL layer 786b, and the EL layer 786c can have the same configuration as the EL layer 786 shown in FIG. 37B. By configuring the light emitting device 572 as shown in FIG. 37D, the current efficiency and the external quantum efficiency of the light emitting device 572 can be further improved. Therefore, a higher brightness image can be displayed on the display device 810. Further, the power consumption of the display device 810 can be further reduced.

The configuration of the light emitting device 572 may be the configuration shown in FIG. 37E. In FIG. 37E, n layers of EL layers (EL layers 786 (1) to EL layers 786 (n)) are provided between the conductor 772 and the conductor 788, and electric charges are generated between the respective EL layers 786. The tandem structure light emitting device 572 having the layer 792 is shown. Here, the EL layer 786 (1) to the EL layer 786 (n) can have the same configuration as the EL layer 786 shown in FIG. 37B. Note that FIG. 37E shows the EL layer 786 (1), the EL layer 786 (m), the EL layer 786 (m + 1), and the EL layer 786 (n) among the EL layers 786. Here, m is an integer greater than or equal to 2 and less than n, and n is an integer greater than m. The larger the value of n, the higher the current efficiency and the external quantum efficiency of the light emitting device 572. Therefore, a high-luminance image can be displayed on the display device 810. In addition, the power consumption of the display device 810 can be reduced.

<Constituent material of light emitting device>
Next, the constituent materials that can be used for the light emitting device 572 will be described.

<< Conductor 772 and Conductor 788 >>
The following materials can be appropriately combined and used for the conductor 772 and the conductor 788 as long as the functions of the anode and the cathode can be satisfied. For example, metals, alloys, electrically conductive compounds, mixtures thereof, and the like can be appropriately used. Specific examples thereof include In—Sn oxide (also referred to as ITO), In—Si—Sn oxide (also referred to as ITSO), In—Zn oxide, and In—W—Zn oxide. In addition, aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn). ), Indium (In), Tin (Sn), Molybdenum (Mo), Tantal (Ta), Tungsten (W), Palladium (Pd), Gold (Au), Platinum (Pt), Silver (Ag), Ittrium (Y) ), A metal such as neodymium (Nd), and an alloy containing these in an appropriate combination can also be used. Other elements belonging to Group 1 or Group 2 of the Periodic Table of Elements (eg, Lithium (Li), Cesium (Cs), Calcium (Ca), Strontium (Sr)), Europium (Eu), Ytterbium Rare earth metals such as (Yb), alloys containing these in appropriate combinations, and other graphenes can be used.

<< Hole injection layer 721 and hole transport layer 722 >>
The hole injection layer 721 is a layer for injecting holes into the EL layer 786 from the conductor 772 which is an anode or the charge generation layer 792, and is a layer containing a material having a high hole injection property. Here, it is assumed that the EL layer 786 includes an EL layer 786a, an EL layer 786b, an EL layer 786c, and an EL layer 786 (1) to an EL layer 786 (n).

Examples of materials with high hole injection properties include transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide. In addition, phthalocyanine compounds, aromatic amine compounds, polymer compounds and the like can be used.

As a material having high hole injectability, a composite material containing a hole transporting material and an acceptor material (electron acceptor material) can also be used. In this case, electrons are extracted from the hole transporting material by the acceptor material, holes are generated in the hole injection layer 721, and holes are injected into the light emitting layer 723 via the hole transport layer 722. The hole injection layer 721 may be formed of a single layer composed of a composite material containing a hole transporting material and an acceptor material (electron acceptor material), but the hole transporting material and the acceptor material (acceptor material) may be formed. The electron acceptor material) may be laminated and formed in separate layers.

The hole transport layer 722 is a layer that transports the holes injected from the conductor 772 to the light emitting layer 723 by the hole injection layer 721. The hole transport layer 722 is a layer containing a hole transport material. As the hole transporting material used for the hole transport layer 722, it is particularly preferable to use a material having a HOMO level equal to or close to the HOMO level of the hole injection layer 721.

As the acceptor material used for the hole injection layer 721, oxides of metals belonging to Groups 4 to 8 in the Periodic Table of the Elements can be used. Specific examples thereof include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide and renium oxide. Of these, molybdenum oxide is particularly preferable because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle. In addition, organic acceptors such as quinodimethane derivatives, chloranil derivatives, and hexaazatriphenylene derivatives can be used.

As the hole-transporting material used for the hole-injecting layer 721 and the hole-transporting layer 722, a material having a hole mobility of ^10-6 cm ^{2 / Vs or more is preferable.} Any substance other than these can be used as long as it is a substance having a higher hole transport property than electrons.

As the hole transporting material, a π-electron-rich heteroaromatic compound (for example, a carbazole derivative or an indole derivative) or an aromatic amine compound can be preferably used. As the hole transporting material, for example, a compound having an aromatic amine skeleton, a compound having a carbazole skeleton, a compound having a thiophene skeleton, and a compound having a furan skeleton can be used. Further, a polymer compound can also be used as the hole transporting material.

However, the hole transporting material is not limited to the above, and various known materials can be used as the hole transporting material for the hole injection layer 721 and the hole transporting layer 722 by combining one or a plurality of known materials. .. The hole transport layer 722 may be formed of a plurality of layers. That is, in the hole transport layer 722, for example, the first hole transport layer and the second hole transport layer may be laminated.

<< Light emitting layer 723 >>
The light emitting layer 723 is a layer containing a light emitting substance. As the luminescent substance, a substance exhibiting a luminescent color such as blue, purple, bluish purple, green, yellowish green, yellow, orange, and red is appropriately used. Here, as shown in FIGS. 37C, 37D, and (E), when the light emitting device 572 has a plurality of EL layers, different light emitting substances are used for the light emitting layer 723 provided in each EL layer to emit different light. It can be configured to exhibit a color (for example, white emission obtained by combining emission colors having a complementary color relationship). For example, when the light emitting device 572 has the configuration shown in FIG. 37C, the light emitting substance used for the light emitting layer 723 provided on the EL layer 786a and the light emitting substance used for the light emitting layer 723 provided on the EL layer 786b are made different from each other. Thereby, the emission color exhibited by the EL layer 786a and the emission color exhibited by the EL layer 786b can be made different from each other. In addition, one light emitting layer may have a laminated structure having different light emitting substances.

The light emitting layer 723 may have one or more kinds of organic compounds (host material, assist material) in addition to the light emitting substance (guest material). Further, one or both of the hole transporting material and the electron transporting material can be used as one or more kinds of organic compounds.

When the light emitting device 572 has the configuration shown in FIG. 37C, a light emitting substance (blue light emitting substance) that emits blue light is used as a guest material in either one of the EL layer 786a and the EL layer 786b, and a substance that emits green light in the other. It is preferable to use (green luminescent substance) and a substance exhibiting red luminescence (red luminescent substance). This method is effective when the luminous efficiency and life of the blue light emitting substance (blue light emitting layer) are inferior to those of others. Here, when a luminescent material that converts singlet excitation energy into light emission in the visible light region is used as the blue luminescent material, and a luminescent material that converts triplet excitation energy into light emission in the visible light region is used as the green and red luminescent material. This is preferable because it improves the spectral balance of RGB.

The luminescent material that can be used for the light emitting layer 723 is not particularly limited, and a luminescent material that converts singlet excitation energy into light emission in the visible light region or a luminescent material that converts triplet excitation energy into light emission in the visible light region is used. Can be done. Examples of the luminescent substance include the following.

Examples of luminescent substances that convert single-term excitation energy into luminescence include substances that emit fluorescence (fluorescent materials). For example, pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, and dibenzoquinoxalin. Examples thereof include derivatives, quinoxalin derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives and the like. In particular, the pyrene derivative is preferable because it has a high emission quantum yield. Pyrene derivatives are a group of compounds useful for achieving blue chromaticity in one aspect of the invention.

Examples of the luminescent substance that converts triplet excitation energy into light emission include a substance that emits phosphorescence (phosphorescent material) and a thermally activated delayed fluorescence (TADF) material that exhibits thermal activated delayed fluorescence.

Examples of the phosphorescent material include an organic metal complex, a metal complex (platinum complex), and a rare earth metal complex. Since these exhibit different emission colors (emission peaks) for each substance, they are appropriately selected and used as necessary.

Examples of phosphorescent materials having a blue or green color and a peak wavelength of emission spectrum of 450 nm or more and 570 nm or less include an organic metal complex having a 4H-triazole skeleton, an organic metal complex having a 1H-triazole skeleton, and an organic metal having an imidazole skeleton. Examples thereof include a complex and an organic metal complex having a phenylpyridine derivative having an electron-withdrawing group as a ligand.

As a phosphorescent material having a green or yellow color and a peak wavelength of 495 nm or more and 590 nm or less, an organometallic iridium complex having a pyrimidine skeleton, an organometallic iridium complex having a pyrazine skeleton, an organometallic iridium complex having a pyridine skeleton, and an organic material Examples thereof include metal complexes and rare earth metal complexes.

Among the above, the organometallic iridium complex having a pyridine skeleton (particularly a phenylpyridine skeleton) or a pyrimidine skeleton is a group of compounds useful for achieving the green chromaticity in one aspect of the present invention.

Examples of phosphorescent materials having a yellow or red color and a peak wavelength of 570 nm or more and 750 nm or less include an organometallic complex having a pyrimidine skeleton, an organometallic complex having a pyrazine skeleton, an organometallic complex having a pyridine skeleton, and a platinum complex. , Rare earth metal complex.

Among the above, the organometallic iridium complex having a pyrazine skeleton is a group of compounds useful for achieving the chromaticity of red in one aspect of the present invention. In particular, an organometallic iridium complex having a cyano group such as [Ir (dmdppr-dmCP) ₂ (dpm)] is preferable because of its high stability.

As the blue light emitting substance, a substance having a peak wavelength of photoluminescence of 430 nm or more and 470 nm or less, more preferably 430 nm or more and 460 nm or less may be used. Further, as the green light emitting substance, a substance having a peak wavelength of photoluminescence of 500 nm or more and 540 nm or less, more preferably 500 nm or more and 530 nm or less may be used. As the red light emitting substance, a substance having a peak wavelength of photoluminescence of 610 nm or more and 680 nm or less, more preferably 620 nm or more and 680 nm or less may be used. The photoluminescence measurement may be either a solution or a thin film.

By using such a compound in combination with the microcavity effect, the above-mentioned chromaticity can be more easily achieved. At this time, the film thickness of the semi-transmissive / semi-reflective electrode (metal thin film portion) required to obtain the microcavity effect is preferably 20 nm or more and 40 nm or less. More preferably, it is larger than 25 nm and 40 nm or less. If it exceeds 40 nm, the efficiency may decrease.

As the organic compound (host material, assist material) used for the light emitting layer 723, one or a plurality of substances having an energy gap larger than the energy gap of the light emitting substance (guest material) may be selected and used. The hole-transporting material described above and the electron-transporting material described later can also be used as a host material or an assist material, respectively.

When the luminescent material is a fluorescent material, it is preferable to use an organic compound having a large energy level in the singlet excited state and a small energy level in the triplet excited state as the host material. For example, it is preferable to use an anthracene derivative or a tetracene derivative.

When the luminescent material is a phosphorescent material, an organic compound having a larger triplet excitation energy than the triplet excitation energy (energy difference between the base state and the triplet excited state) of the luminescent material may be selected as the host material. In this case, in addition to zinc and aluminum-based metal complexes, oxadiazole derivatives, triazole derivatives, benzoimidazole derivatives, quinoxalin derivatives, dibenzoquinoxalin derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, pyrimidine derivatives, triazine derivatives, and pyridine derivatives , Bipyridine derivatives, phenanthroline derivatives, etc., aromatic amines, carbazole derivatives, etc. can be used.

When a plurality of organic compounds are used in the light emitting layer 723, it is preferable to mix the compound forming the excitation complex with the light emitting substance. In this case, various organic compounds can be appropriately combined and used, but in order to efficiently form an excitation complex, a compound that easily receives holes (hole transporting material) and a compound that easily receives electrons (electrons) can be used. It is particularly preferable to combine it with a transportable material). As specific examples of the hole-transporting material and the electron-transporting material, the materials shown in the present embodiment can be used.

A TADF material is a material that can up-convert a triplet excited state to a singlet excited state (intersystem crossing) with a small amount of thermal energy, and efficiently exhibits light emission (fluorescence) from the singlet excited state. is there. Further, as a condition for efficiently obtaining thermally activated delayed fluorescence, the energy difference between the triplet excited level and the singlet excited level is 0 eV or more and 0.2 eV or less, preferably 0 eV or more and 0.1 eV or less. Be done. In addition, delayed fluorescence in TADF materials refers to emission that has a spectrum similar to that of normal fluorescence but has a significantly long lifetime. Its life is ^10-6 seconds or longer, preferably ^10-3 seconds or longer.

Examples of the TADF material include fullerenes and derivatives thereof, acridine derivatives such as proflavine, and eosin. Examples thereof include metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), palladium (Pd) and the like. Examples of the metal-containing porphyrin include a protoporphyrin-tin fluoride complex (SnF ₂ (Proto IX)), a mesoporphyrin-tin fluoride complex (SnF ₂ (Meso IX)), and a hematoporphyrin-tin fluoride complex (SnF ₂ (SnF 2)). Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF ₂ _{(Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF 2} (OEP)), ethioporphyrin-tin fluoride complex (SnF 2 (Copro III-4Me)) SnF ₂ (Etio I)), octaethylporphyrin-platinum chloride complex (PtCl ₂ OEP) and the like can be mentioned. Further, as the TADF material, a heterocyclic compound having a π-electron excess type heteroaromatic ring and a π-electron deficiency type heteroaromatic ring can be used. A substance in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded has a stronger donor property of the π-electron-rich heteroaromatic ring and a stronger acceptability of the π-electron-deficient heteroaromatic ring. , It is particularly preferable because the energy difference between the singlet excited state and the triplet excited state becomes small.

When a TADF material is used, it can also be used in combination with other organic compounds.

<< Electron transport layer 724 >>
The electron transport layer 724 is a layer that transports the electrons injected from the conductor 788 to the light emitting layer 723 by the electron injection layer 725. The electron transport layer 724 is a layer containing an electron transportable material. The electron-transporting material used for the electron-transporting layer 724 is preferably a substance having an electron mobility of ^{1 × 10-6} cm ^{2 / Vs or more.} Any substance other than these can be used as long as it is a substance having a higher electron transport property than holes.

Examples of the electron-transporting material include quinoline ligands, benzoquinoline ligands, oxazole ligands, metal complexes having thiazole ligands, oxaziazole derivatives, triazole derivatives, phenanthroline derivatives, pyridine derivatives, bipyridine derivatives and the like. Can be mentioned. In addition, a π-electron-deficient heteroaromatic compound such as a nitrogen-containing heteroaromatic compound can also be used.

The electron transport layer 724 is not limited to a single layer, but may have a structure in which two or more layers made of the above substances are laminated.

<< Electron injection layer 725 >>
The electron injection layer 725 is a layer containing a substance having a high electron injection property. The electron injection layer 725 is filled with alkali metals such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ₂ ), lithium oxide (LiO _x ), alkaline earth metals, or the like. Compounds can be used. In addition, rare earth metal compounds such as erbium fluoride (ErF _{3) can be used.} Further, an electride may be used for the electron injection layer 725. Examples of the electride include a substance in which a high concentration of electrons is added to a mixed oxide of calcium and aluminum. The substance constituting the electron transport layer 724 described above can also be used.

A composite material formed by mixing an organic compound and an electron donor (donor) may be used for the electron injection layer 725. Such a composite material is excellent in electron injection property and electron transport property because electrons are generated in the organic compound by the electron donor. In this case, the organic compound is preferably a material excellent in transporting generated electrons, and specifically, for example, an electron transporting material (metal complex, heteroaromatic compound, etc.) used for the above-mentioned electron transport layer 724. Can be used. As the electron donor, any substance that exhibits electron donating property to the organic compound may be used. Specifically, alkali metals, alkaline earth metals and rare earth metals are preferable, and lithium, cesium, magnesium, calcium, erbium, ytterbium and the like can be mentioned. Further, alkali metal oxides and alkaline earth metal oxides are preferable, and lithium oxides, calcium oxides, barium oxides and the like can be mentioned. A Lewis base such as magnesium oxide can also be used. Further, an organic compound such as tetrathiafulvalene (abbreviation: TTF) can also be used.

<< Charge generation layer 792 >>
When a voltage is applied between the conductor 772 and the conductor 788, the charge generation layer 792 is attached to the EL layer 786 on the side closer to the conductor 772 of the two EL layers 786 in contact with the charge generation layer 792. It has a function of injecting electrons and injecting holes into the EL layer 786 on the side close to the conductor 788. For example, in the light emitting device 572 having the configuration shown in FIG. 37C, the charge generation layer 792 has a function of injecting electrons into the EL layer 786a and injecting holes into the EL layer 786b. The charge generation layer 792 may have an electron acceptor added to the hole transporting material or an electron donor added to the electron transporting material. Good. Moreover, both of these configurations may be laminated. By forming the charge generation layer 792 using the above-mentioned material, it is possible to suppress an increase in the drive voltage of the display device 810 when the EL layers are laminated.

In the charge generation layer 792, when an electron acceptor is added to the hole transporting material, the electron acceptor is 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquino. Jimetan _{(abbreviation:} F 4 -TCNQ), chloranil, and the like can be given. Further, oxides of metals belonging to Group 4 to Group 8 in the Periodic Table of the Elements can be mentioned. Specific examples thereof include vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and renium oxide.

In the charge generation layer 792, when an electron donor is added to the electron transporting material, the electron donor is classified into alkali metal or alkaline earth metal or rare earth metal or Group 2 and 13 in the periodic table of elements. The metal to which it belongs, its oxide, and a carbonate can be used. Specifically, it is preferable to use lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide, cesium carbonate and the like. Further, an organic compound such as tetrathianaphthalene may be used as an electron donor.

A vacuum process such as a vapor deposition method or a solution process such as a spin coating method or an inkjet method can be used to manufacture the light emitting device 572. When the vapor deposition method is used, a physical vapor deposition method (PVD method) such as a sputtering method, an ion plating method, an ion beam vapor deposition method, a molecular beam vapor deposition method, or a vacuum vapor deposition method, or a chemical vapor deposition method (CVD method) is used. be able to. In particular, the functional layers (hole injection layer, hole transport layer, light emitting layer, electron transport layer, electron injection layer) and charge generation layer included in the EL layer of the light emitting device are subjected to a vapor deposition method (vacuum vapor deposition method, etc.) and coating. Method (dip coating method, die coating method, bar coating method, spin coating method, spray coating method, etc.), printing method (inkprint method, screen (hole plate printing) method, offset (flat plate printing) method, flexo (convex printing) method, It can be formed by a method such as a gravure method or a microcontact method).

The functional layers (hole injection layer, hole transport layer, light emitting layer, electron transport layer, electron injection layer) and the charge generation layer constituting the EL layer of the light emitting device shown in the present embodiment are made of the above-mentioned materials. The materials are not limited to the above, and other materials can be used in combination as long as they can satisfy the functions of each layer. As an example, a high molecular compound (oligoform, dendrimer, polymer, etc.), a medium molecular compound (compound in the intermediate region between low molecular weight and high molecular weight: molecular weight 400 to 4000), an inorganic compound (quantum dot material, etc.) and the like can be used. .. As the quantum dot material, a colloidal quantum dot material, an alloy type quantum dot material, a core / shell type quantum dot material, a core type quantum dot material, or the like can be used.

The display device 810 shown in the present embodiment can also be applied to the light source included in the detection device 17 shown in the first embodiment. By applying the display device 810 to the light source shown in the first embodiment, the light sources can be arranged at a high density. Thereby, the electronic device of one aspect of the present invention can acquire the information of the user of the electronic device with higher accuracy.

FIG. 38A shows a configuration example of an imaging device that can be used for the detection device 17 shown in the first embodiment. FIG. 38A is a cross-sectional view showing the configuration of the image pickup apparatus. As shown in FIG. 38A, a transistor 1003, a light emitting device 572, a photoelectric conversion device 1010, a colored layer 993R, a colored layer 993IR, and the like can be provided between the substrate 1001 and the substrate 995. Here, the transistor 1003 can be, for example, an OS transistor. FIG. 38A shows four transistors 1003.

An insulator 1002 is provided on the substrate 1001, and a transistor 1003 is provided on the insulator 1002. An insulator 1004 is provided on the transistor 1003, and an insulator 1005 is provided on the insulator 1004. A light emitting device 572 and a photoelectric conversion device 1010 are provided on the insulator 1005, and a colored layer 993R and a colored layer 993IR are provided so as to have a region overlapping the light emitting device 572 or the photoelectric conversion device 1010. FIG. 38A shows two light emitting devices 572 (light emitting device 572_1, light emitting device 572_2) and two photoelectric conversion devices 1010 (photoelectric conversion device 1010_1, photoelectric conversion device 1010_2), each of which is different from the transistor 1003. Shows an electrically connected configuration. Further, in FIG. 38A, a colored layer 993R having a function of transmitting red light is provided so as to have a region overlapping with the light emitting device 572_1, and a function of transmitting infrared light so as to have a region overlapping with the light emitting device 572_1. The structure in which the colored layer 993IR having the above is provided is shown. Further, the configuration is shown in which the colored layer 993R is provided so as to have a region overlapping with the photoelectric conversion device 1010_1, and the colored layer 993IR is provided so as to have a region overlapping with the photoelectric conversion device 1010_1.

_{The photoelectric conversion device 1010 has a function of receiving light Lex} emitted from the outside of the image pickup apparatus and converting it into an electric signal corresponding to the illuminance of the received light _Lex.

The light emitting device 572 preferably has a function of emitting white light and infrared light. As a result, the light emitted from the light emitting device 572_1 is emitted to the outside of the image pickup apparatus as red light R through the colored layer 993R. Further, the light emitted from the light emitting device 572_2 is emitted to the outside of the image pickup apparatus as infrared light IR through the colored layer 993IR. The red light R and the infrared light IR emitted to the outside of the image pickup apparatus hit the object, are reflected, and irradiate the photoelectric conversion device 1010. For example, when the imaging device having the configuration shown in FIG. 38A is applied to the spectacle-type electronic device shown in the first embodiment, the face of the user of the spectacle-type electronic device is irradiated with red light R and infrared light IR. , The reflected light _Lex can be detected by the photoelectric conversion device 1010.

Since the image pickup device has a function of detecting both red light and infrared light, the image pickup device has a function of detecting only one of red light and infrared light. It is possible to detect the state of the user's eyes of the device and its surroundings with high accuracy. As a result, the facial features of the user, such as the facial expression of the user of the electronic device according to the present invention, can be recognized with high accuracy. Therefore, the electronic device according to the present invention is, for example, the user. It is possible to have a function of estimating the degree of fatigue, emotions, etc. with high accuracy.

When the display device of one aspect of the present invention has a photoelectric conversion device, the display device can be configured as shown in FIG. 38A. In this case, the display device includes a light emitting device 572 having a region overlapping the colored layer 993R having a function of transmitting red light, and a light emitting device 572 having a region overlapping the colored layer 993IR having a function of transmitting infrared light. In addition, a light emitting device 572 having a region overlapping with a colored layer having a function of transmitting green light and a light emitting device 572 having a region overlapping with a colored layer having a function of transmitting blue light are provided.

The light emitting device 572 is formed by the conductor 772, the EL layer 786, and the conductor 788. Further, the photoelectric conversion device 1010 is formed by the conductor 772, the active layer 1011 and the conductor 788. Here, the transistor 1003 is electrically connected to the conductor 772.

As the active layer 1011, a laminated structure in which a p-type semiconductor and an n-type semiconductor are laminated to realize a pn junction, or a laminated structure in which a p-type semiconductor, an i-type semiconductor, and an n-type semiconductor are laminated to realize a pin junction. And so on.

As the semiconductor used for the active layer 1011 or an inorganic semiconductor such as silicon or an organic semiconductor containing an organic compound can be used. In particular, it is preferable to use an organic semiconductor material because the EL layer 786 of the light emitting device 572 and the active layer 1011 can be easily formed by the same vacuum vapor deposition method, and the manufacturing apparatus can be shared.

When an organic semiconductor material is used as the active layer 1011, an _{electron-accepting organic semiconductor material such as fullerene (for example, C 60} , C _70, etc.) or a derivative thereof can be used as the material for the n-type semiconductor. Further, as the material of the p-type semiconductor, an electron-donating organic semiconductor material such as copper (II) phthalocyanine (CuPc) or tetraphenyldibenzoperifranten (DBP) can be used. The active layer 1011 may have a laminated structure (pn laminated structure) of an electron-accepting semiconductor material and an electron-donating semiconductor material, or an electron-accepting semiconductor material and an electron-donating semiconductor material between them. May be a laminated structure (p-n laminated structure) provided with a bulk heterostructure layer co-deposited with. Further, for the purpose of suppressing dark current when not irradiating light, a layer that functions as a hole block layer around the above-mentioned pn laminated structure or p-in laminated structure (upper side or lower side). Alternatively, a layer that functions as an electronic block layer may be provided.

In the light emitting device 572, the EL layer 786 is provided on the conductor 772. Further, in the photoelectric conversion device 1010, the active layer 1011 is provided on the conductor 772. Further, a conductor 788 is provided so as to cover the EL layer 786 and the active layer 1011. As a result, the conductor 788 can be configured to serve as both an electrode of the light emitting device 572 and an electrode of the photoelectric conversion device 1010.

FIG. 38B is a cross-sectional view showing a configuration example of the imaging device according to one aspect of the present invention, and is a modification of the configuration shown in FIG. 38A. The image pickup device having the configuration shown in FIG. 38B is different from the image pickup device having the configuration shown in FIG. 38A in that the light emitting device 572 is not provided.

When the electronic device of one aspect of the present invention has an image pickup device having the configuration shown in FIG. 38B, the image pickup device can detect the light emitted from the light source by providing a light source outside the image pickup device. For example, when the imaging device having the configuration shown in FIG. 38B is applied to the spectacle-type electronic device shown in the first embodiment, the red light and red emitted from the light source are applied to the face of the user of the spectacle-type electronic device. external light is irradiated, the light L _ex reflected can be detected by the photoelectric conversion device 1010.

By configuring the image pickup device included in the electronic device of one aspect of the present invention as shown in FIG. 38B, the photoelectric conversion device 1010 can be provided in the image pickup device at a high density.

The configuration examples illustrated in the present embodiment and the drawings and the like corresponding to them can be implemented by appropriately combining at least a part of them with other configuration examples or drawings and the like.

(Embodiment 3)
In the present embodiment, a transistor that can be used in a display device according to an aspect of the present invention will be described.

<Transistor configuration example 1>
39A, 39B, and (C) are a top view and a cross-sectional view of the transistor 200A that can be used in the display device according to one aspect of the present invention, and the periphery of the transistor 200A. The transistor 200A can be applied to the transistors included in the pixel array 833, the gate driver circuit 821, the source driver circuit 822, and the circuit 840 shown in the first embodiment and the like.

FIG. 39A is a top view of the transistor 200A. 39B and 39C are cross-sectional views of the transistor 200A. Here, FIG. 39B is a cross-sectional view of the portion shown by the alternate long and short dash line of A1-A2 in FIG. 39A, and is also a cross-sectional view of the transistor 200A in the channel length direction. Further, FIG. 39C is a cross-sectional view of the portion shown by the alternate long and short dash line of A3-A4 in FIG. 39A, and is also a cross-sectional view of the transistor 200A in the channel width direction. In the top view of FIG. 39A, some elements are omitted for the sake of clarity.

The transistor 200A is separated from each other on the metal oxide 230a arranged on the substrate (not shown), the metal oxide 230b arranged on the metal oxide 230a, and the metal oxide 230b. The arranged conductor 242a and the conductor 242b, the insulator 280 arranged on the conductor 242a and the conductor 242b and having an opening formed between the conductor 242a and the conductor 242b, and the inside of the opening. The insulator 250 arranged between the conductor 260 and the metal oxide 230b, the conductor 242a, the conductor 242b, and the insulator 280 and the conductor 260, and the metal oxide 230b, the conductive It has a body 242a, a conductor 242b, an insulator 280, and a metal oxide 230c disposed between the insulator 250. Here, as shown in FIGS. 39B and 39C, it is preferable that the upper surface of the conductor 260 substantially coincides with the upper surfaces of the insulator 250, the insulator 254, the metal oxide 230c, and the insulator 280. In the following, the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c may be collectively referred to as the metal oxide 230. Further, the conductor 242a and the conductor 242b may be collectively referred to as a conductor 242.

As shown in FIG. 39B, the transistor 200A has a shape in which the side surfaces of the conductor 242a and the conductor 242b on the conductor 260 side are substantially vertical. The transistor 200A shown in FIG. 39 is not limited to this, and the angle formed by the side surface and the bottom surface of the conductor 242a and the conductor 242b is 10 ° or more and 80 ° or less, preferably 30 ° or more and 60 ° or less. May be. Further, the opposing side surfaces of the conductor 242a and the conductor 242b may have a plurality of surfaces.

As shown in FIGS. 39B and 39C, the insulator 254 between the insulator 224, the metal oxide 230a, the metal oxide 230b, the conductor 242a, the conductor 242b, and the metal oxide 230c and the insulator 280. Is preferably arranged. Here, as shown in FIGS. 39B and 39C, the insulator 254 includes a side surface of the metal oxide 230c, an upper surface and a side surface of the conductor 242a, an upper surface and a side surface of the conductor 242b, a side surface of the metal oxide 230a, and metal oxidation. It is preferable to have a region in contact with the side surface of the object 230b and the upper surface of the insulator 224.

The transistor 200A has a configuration in which three layers of a metal oxide 230a, a metal oxide 230b, and a metal oxide 230c are laminated in a region where a channel is formed (hereinafter, also referred to as a channel formation region) and in the vicinity thereof. However, the present invention is not limited to this. For example, a two-layer structure of the metal oxide 230b and the metal oxide 230c, or a laminated structure of four or more layers may be provided. Further, in the transistor 200A, the conductor 260 is shown as a two-layer laminated structure, but the present invention is not limited to this. For example, the conductor 260 may have a single-layer structure or a laminated structure of three or more layers. Further, each of the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c may have a laminated structure of two or more layers.

For example, when the metal oxide 230c has a laminated structure composed of a first metal oxide and a second metal oxide on the first metal oxide, the first metal oxide is a metal oxide 230b. It has a similar composition, and the second metal oxide preferably has the same composition as the metal oxide 230a.

Here, the conductor 260 functions as a gate electrode of the transistor, and the conductor 242a and the conductor 242b function as a source electrode or a drain electrode, respectively. As described above, the conductor 260 is formed so as to be embedded in the opening of the insulator 280 and the region sandwiched between the conductor 242a and the conductor 242b. Here, the arrangement of the conductor 260, the conductor 242a, and the conductor 242b is selected in a self-aligned manner with respect to the opening of the insulator 280. That is, in the transistor 200A, the gate electrode can be arranged in a self-aligned manner between the source electrode and the drain electrode. Therefore, since the conductor 260 can be formed without providing the alignment margin, the occupied area of the transistor 200A can be reduced. As a result, the display device can be made high-definition. Further, the display device can be made into a narrow frame.

As shown in FIG. 39, the conductor 260 preferably has a conductor 260a provided inside the insulator 250 and a conductor 260b provided so as to be embedded inside the conductor 260a.

As shown in FIGS. 39A, 39B, and 39C, the transistor 200A includes an insulator 214 arranged on a substrate (not shown), an insulator 216 arranged on the insulator 214, and an insulator. It may have a conductor 205 arranged to be embedded in 216, an insulator 216 and an insulator 222 arranged on the conductor 205, and an insulator 224 arranged on the insulator 222. preferable. Further, it is preferable that the metal oxide 230a is arranged on the insulator 224.

It is preferable that an insulator 274 that functions as an interlayer film and an insulator 281 are arranged on the transistor 200A. Here, it is preferable that the insulator 274 is arranged in contact with the upper surface of the conductor 260, the insulator 250, the insulator 254, the metal oxide 230c, and the insulator 280.

It is preferable that the insulator 222, the insulator 254, and the insulator 274 have a function of suppressing the diffusion of hydrogen (for example, at least one hydrogen atom, hydrogen molecule, etc.). For example, the insulator 222, the insulator 254, and the insulator 274 preferably have lower hydrogen permeability than the insulator 224, the insulator 250, and the insulator 280. Further, the insulator 222 and the insulator 254 preferably have a function of suppressing the diffusion of oxygen (for example, at least one oxygen atom, oxygen molecule, etc.). For example, the insulator 222 and the insulator 254 preferably have lower oxygen permeability than the insulator 224, the insulator 250, and the insulator 280.

Here, the insulator 224, the metal oxide 230, and the insulator 250 are separated from the insulator 280 and the insulator 281 by the insulator 254 and the insulator 274. Therefore, it is possible to prevent impurities such as hydrogen contained in the insulator 280 and the insulator 281 and excess oxygen from being mixed into the insulator 224, the metal oxide 230, and the insulator 250.

It is preferable that a conductor 240 (conductor 240a and conductor 240b) that is electrically connected to the transistor 200A and functions as a plug is provided. An insulator 241 (insulator 241a and insulator 241b) is provided in contact with the side surface of the conductor 240 that functions as a plug. That is, the insulator 254, the insulator 280, the insulator 274, and the insulator 241 are provided in contact with the inner wall of the opening of the insulator 281. Further, the first conductor of the conductor 240 may be provided in contact with the side surface of the insulator 241, and the second conductor of the conductor 240 may be further provided inside. Here, the height of the upper surface of the conductor 240 and the height of the upper surface of the insulator 281 can be made about the same. The transistor 200A shows a configuration in which the first conductor of the conductor 240 and the second conductor of the conductor 240 are laminated, but the present invention is not limited to this. For example, the conductor 240 may be provided as a single layer or a laminated structure having three or more layers. When the structure has a laminated structure, an ordinal number may be given in the order of formation to distinguish them.

The transistor 200A is a metal oxide 230 (metal oxide 230a, metal oxide 230b, and metal oxide 230c) containing a channel forming region, and a metal oxide (hereinafter, also referred to as an oxide semiconductor) that functions as an oxide semiconductor. ) Is preferably used. For example, as the metal oxide serving as the channel forming region of the metal oxide 230, it is preferable to use a metal oxide having a band gap of 2 eV or more, preferably 2.5 eV or more as described above.

As shown in FIG. 39B, the film thickness of the region of the metal oxide 230b that does not overlap with the conductor 242 may be thinner than the film thickness of the region that overlaps with the conductor 242. This is formed by removing a part of the upper surface of the metal oxide 230b when forming the conductor 242a and the conductor 242b. When a conductive film to be a conductor 242 is formed on the upper surface of the metal oxide 230b, a region having low resistance may be formed in the vicinity of the interface with the conductive film. As described above, by removing the region having low resistance located between the conductor 242a and the conductor 242b on the upper surface of the metal oxide 230b, it is possible to suppress the formation of a channel in the region.

According to one aspect of the present invention, it is possible to provide a display device having a transistor having a small size and a high definition. Alternatively, it is possible to provide a display device having a transistor having a large on-current and having a high brightness. Alternatively, it is possible to provide a display device having a fast-moving transistor and fast-moving. Alternatively, it is possible to provide a highly reliable display device having a transistor having stable electrical characteristics. Alternatively, it is possible to provide a display device having a transistor having a small off-current and low power consumption.

The detailed configuration of the transistor 200A that can be used in the display device according to one aspect of the present invention will be described.

The conductor 205 is arranged so as to have a region overlapping with the metal oxide 230 and the conductor 260. Further, it is preferable that the conductor 205 is embedded in the insulator 216. Here, it is preferable to improve the flatness of the upper surface of the conductor 205. For example, the average surface roughness (Ra) of the upper surface of the conductor 205 may be 1 nm or less, preferably 0.5 nm or less, and more preferably 0.3 nm or less. As a result, the flatness of the insulator 224 formed on the conductor 205 can be improved, and the crystallinity of the metal oxide 230b and the metal oxide 230c can be improved.

Here, the conductor 260 may function as a first gate (also referred to as a top gate) electrode. Further, the conductor 205 may function as a second gate (also referred to as a back gate) electrode. _{In that case, the Vth} of the transistor 200A can be controlled by changing the potential applied to the conductor 205 independently without interlocking with the potential applied to the conductor 260. In particular, by applying a negative potential to the conductor 205, _{it is possible to make the Vth} of the transistor 200A larger than 0V and reduce the off-current. Therefore, when a negative potential is applied to the conductor 205, the drain current of the transistor 200A when the potential applied to the conductor 260 is 0 V can be made smaller than when it is not applied.

The conductor 205 should be provided larger than the channel formation region in the metal oxide 230. In particular, as shown in FIG. 39C, it is preferable that the conductor 205 is also stretched in a region outside the end portion intersecting the channel width direction of the metal oxide 230. That is, it is preferable that the conductor 205 and the conductor 260 are superimposed via an insulator on the outside of the side surface of the metal oxide 230 in the channel width direction.

By having the above configuration, the channel forming region of the metal oxide 230 is formed by the electric field of the conductor 260 having a function as a first gate electrode and the electric field of the conductor 205 having a function as a second gate electrode. Can be electrically surrounded.

As shown in FIG. 39C, the conductor 205 is stretched to function as wiring. However, the present invention is not limited to this, and a conductor that functions as wiring may be provided under the conductor 205.

As the conductor 205, it is preferable to use a conductive material containing tungsten, copper, or aluminum as a main component. Although the conductor 205 is shown as a single layer, it may have a laminated structure, for example, titanium or titanium nitride may be laminated with the conductive material.

Hydrogen atoms under the conductor 205, having a hydrogen molecule, a water molecule, a nitrogen atom, a nitrogen molecule, nitric oxide molecule _{(N 2 O, NO, NO} 2 , etc.), a function of suppressing diffusion of impurities such as copper atoms ( The above impurities are difficult to permeate.) A conductor may be provided. Alternatively, it is preferable to provide a conductor having a function of suppressing the diffusion of oxygen (for example, at least one oxygen atom, oxygen molecule, etc.) (the above oxygen is difficult to permeate). In the present specification, the function of suppressing the diffusion of impurities or oxygen is a function of suppressing the diffusion of any one or all of the above impurities or the above oxygen.

By providing a conductor having a function of suppressing the diffusion of oxygen under the conductor 205, it is possible to prevent the conductor 205 from being oxidized and the conductivity from being lowered. As the conductor having a function of suppressing the diffusion of oxygen, for example, tantalum, tantalum nitride, ruthenium, ruthenium oxide and the like are preferably used. Therefore, as the conductor 205, the conductive material may be a single layer or a laminate.

The insulator 214 preferably has a function as a barrier insulating film that prevents impurities such as water and hydrogen from being mixed into the transistor 200A from the substrate side. Thus, the insulator 214 has a hydrogen atom, a hydrogen molecule, a water molecule, a nitrogen atom, a nitrogen molecule, nitric oxide molecule _{(N 2 O, NO, NO} 2 , etc.), a function of suppressing diffusion of impurities such as copper atoms (It is difficult for the above impurities to permeate.) It is preferable to use an insulating material. Alternatively, it is preferable to use an insulating material having a function of suppressing the diffusion of oxygen (for example, at least one oxygen atom, oxygen molecule, etc.) (the above oxygen is difficult to permeate).

For example, it is preferable to use aluminum oxide, silicon nitride, or the like as the insulator 214. As a result, it is possible to prevent impurities such as water and hydrogen from diffusing from the substrate side to the transistor 200A side of the insulator 214. Alternatively, it is possible to prevent oxygen contained in the insulator 224 or the like from diffusing toward the substrate side of the insulator 214.

It is preferable that the insulator 216, the insulator 280, and the insulator 281 that function as the interlayer film have a lower relative permittivity than the insulator 214. By using a material having a low relative permittivity as an interlayer film, it is possible to reduce the parasitic capacitance generated between the wirings. For example, as the insulator 216, the insulator 280, and the insulator 281, silicon oxide, silicon oxide nitride, silicon nitride oxide, silicon nitride, silicon oxide added with fluorine, silicon oxide added with carbon, carbon and nitrogen were added. Silicon oxide, silicon oxide having pores, or the like may be appropriately used.

The insulator 222 and the insulator 224 have a function as a gate insulator.

Here, it is preferable that the insulator 224 in contact with the metal oxide 230 desorbs oxygen by heating. In the present specification and the like, oxygen released by heating may be referred to as excess oxygen. For example, as the insulator 224, silicon oxide, silicon oxide nitride, or the like may be appropriately used. By providing an insulator containing oxygen in contact with the metal oxide 230, oxygen deficiency in the metal oxide 230 can be reduced and the reliability of the transistor 200A can be improved.

Specifically, as the insulator 224, it is preferable to use an oxide material in which a part of oxygen is desorbed by heating. Oxides that desorb oxygen by heating are those in which the amount of oxygen desorbed in terms of oxygen atoms is 1.0 × 10 ¹⁸ atoms / cm ³ or more, preferably 1 in TDS (Thermal Desolation Spectroscopy) analysis. An oxide film of 0.0 × 10 ¹⁹ atoms / cm ³ or more, more preferably 2.0 × 10 ¹⁹ atoms / cm ³ or more, or 3.0 × 10 ²⁰ atoms / cm ^{3 or more.} The surface temperature of the film during the TDS analysis is preferably in the range of 100 ° C. or higher and 700 ° C. or lower, or 100 ° C. or higher and 400 ° C. or lower.

As shown in FIG. 39C, the film thickness of the region where the insulator 224 does not overlap with the insulator 254 and does not overlap with the metal oxide 230b may be thinner than the film thickness in the other regions. In the insulator 224, the film thickness of the region that does not overlap with the insulator 254 and does not overlap with the metal oxide 230b is preferably a film thickness that can sufficiently diffuse the oxygen.

Like the insulator 214 and the like, the insulator 222 preferably has a function as a barrier insulating film that prevents impurities such as water and hydrogen from being mixed into the transistor 200A from the substrate side. For example, the insulator 222 preferably has a lower hydrogen permeability than the insulator 224. By surrounding the insulator 224, the metal oxide 230, the insulator 250, etc. with the insulator 222, the insulator 254, and the insulator 274, impurities such as water or hydrogen are suppressed from entering the transistor 200A from the outside. can do.

Further, it is preferable that the insulator 222 has a function of suppressing the diffusion of oxygen (for example, at least one oxygen atom, oxygen molecule, etc.) (the above oxygen is difficult to permeate). For example, the insulator 222 preferably has a lower oxygen permeability than the insulator 224. Since the insulator 222 has a function of suppressing the diffusion of oxygen and impurities, it is possible to reduce the diffusion of oxygen contained in the metal oxide 230 toward the substrate side, which is preferable. Further, it is possible to suppress the conductor 205 from reacting with the oxygen contained in the insulator 224 and the oxygen contained in the metal oxide 230.

As the insulator 222, it is preferable to use an insulator containing oxides of one or both of aluminum and hafnium, which are insulating materials. It is preferable to use aluminum oxide and hafnium oxide as an insulator containing oxides of one or both of aluminum and hafnium. Alternatively, it is preferable to use an oxide containing aluminum and hafnium (hafnium aluminate) or the like. When the insulator 222 is formed by using such a material, the insulator 222 releases oxygen from the metal oxide 230 and mixes impurities such as hydrogen from the peripheral portion of the transistor 200A into the metal oxide 230. It functions as a suppressing layer.

Alternatively, for example, aluminum oxide, bismuth oxide, germanium oxide, niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, and zirconium oxide may be added to these insulators. Alternatively, these insulators may be nitrided. Silicon oxide, silicon oxide nitride, or silicon nitride may be laminated on the above insulator.

The insulator 222 is a so-called so-called aluminum oxide, hafnium oxide, tantalum oxide, zirconate oxide, lead zirconate titanate (PZT), strontium titanate (SrTiO ₃ ), or (Ba, Sr) TiO _{3 (BST).} Insulators containing high-k material may be used in single layers or laminates. As transistors become finer and more integrated, problems such as leakage current may occur due to the thinning of the gate insulator. By using a high-k material for an insulator that functions as a gate insulator, it is possible to reduce the gate potential during transistor operation while maintaining the physical film thickness.

Note that the insulator 222 and the insulator 224 may have a laminated structure of two or more layers. In that case, the laminated structure is not limited to the same material, and may be a laminated structure made of different materials. For example, an insulator similar to the insulator 224 may be provided under the insulator 222.

The metal oxide 230 has a metal oxide 230a, a metal oxide 230b on the metal oxide 230a, and a metal oxide 230c on the metal oxide 230b. By having the metal oxide 230a under the metal oxide 230b, it is possible to suppress the diffusion of impurities from the structure formed below the metal oxide 230a to the metal oxide 230b. Further, by having the metal oxide 230c on the metal oxide 230b, it is possible to suppress the diffusion of impurities from the structure formed above the metal oxide 230c to the metal oxide 230b.

The metal oxide 230 preferably has a laminated structure of a plurality of oxide layers having different atomic number ratios of each metal atom. Specifically, in the metal oxide used for the metal oxide 230a, the atomic number ratio of the element M in the constituent elements is higher than the atomic number ratio of the element M in the constituent elements in the metal oxide used for the metal oxide 230b. Larger is preferred. Further, in the metal oxide used for the metal oxide 230a, the atomic number ratio of the element M to In is preferably larger than the atomic number ratio of the element M to In in the metal oxide used for the metal oxide 230b. Further, in the metal oxide used for the metal oxide 230b, the atomic number ratio of In to the element M is preferably larger than the atomic number ratio of In to the element M in the metal oxide used for the metal oxide 230a. Further, as the metal oxide 230c, a metal oxide that can be used for the metal oxide 230a or the metal oxide 230b can be used.

The metal oxide 230a, the metal oxide 230b, and the metal oxide 230c are preferably crystalline, and it is particularly preferable to use CAAC-OS (c-axis aligned crystalline oxide semiconductor). Crystalline oxides such as CAAC-OS have a dense structure with high crystallinity with few impurities and defects (oxygen deficiency, etc.). Therefore, it is possible to suppress the extraction of oxygen from the metal oxide 230b by the source electrode or the drain electrode. As a result, it is possible to suppress the extraction of oxygen from the metal oxide 230b even when the heat treatment is performed. Therefore, the transistor 200A is stable against a high temperature (so-called thermal budget) in the manufacturing process.

It is preferable that the energy at the lower end of the conduction band of the metal oxide 230a and the metal oxide 230c is higher than the energy at the lower end of the conduction band of the metal oxide 230b. In other words, it is preferable that the electron affinity of the metal oxide 230a and the metal oxide 230c is smaller than the electron affinity of the metal oxide 230b. In this case, as the metal oxide 230c, it is preferable to use a metal oxide that can be used for the metal oxide 230a. Specifically, in the metal oxide used for the metal oxide 230c, the atomic number ratio of the element M in the constituent elements is higher than the atomic number ratio of the element M in the constituent elements in the metal oxide used in the metal oxide 230b. Larger is preferred. Further, in the metal oxide used for the metal oxide 230c, the atomic number ratio of the element M to In is preferably larger than the atomic number ratio of the element M to In in the metal oxide used for the metal oxide 230b. Further, in the metal oxide used for the metal oxide 230b, the atomic number ratio of In to the element M is preferably larger than the atomic number ratio of In to the element M in the metal oxide used for the metal oxide 230c.

Here, at the junction of the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c, the energy level at the lower end of the conduction band changes gently. In other words, it can be said that the energy level at the lower end of the conduction band at the junction of the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c is continuously changed or continuously bonded. In order to do so, it is preferable to reduce the defect level density of the mixed layer formed at the interface between the metal oxide 230a and the metal oxide 230b and the interface between the metal oxide 230b and the metal oxide 230c.

Specifically, the metal oxide 230a and the metal oxide 230b, and the metal oxide 230b and the metal oxide 230c have a common element (main component) other than oxygen, so that the defect level density is low. A mixed layer can be formed. For example, when the metal oxide 230b is an In-Ga-Zn oxide, In-Ga-Zn oxide, Ga-Zn oxide, gallium oxide or the like may be used as the metal oxide 230a and the metal oxide 230c. .. Further, the metal oxide 230c may have a laminated structure. For example, a laminated structure of In-Ga-Zn oxide and Ga-Zn oxide on the In-Ga-Zn oxide, or In-Ga-Zn oxide and In-Ga-Zn oxide on the In-Ga-Zn oxide. A laminated structure with gallium oxide can be used. In other words, a laminated structure of an In-Ga-Zn oxide and an oxide containing no In may be used as the metal oxide 230c.

Specifically, as the metal oxide 230a, a metal oxide having In: Ga: Zn = 1: 3: 4 [atomic number ratio] or 1: 1: 0.5 [atomic number ratio] may be used. Further, as the metal oxide 230b, a metal oxide having In: Ga: Zn = 4: 2: 3 [atomic number ratio] or 3: 1: 2 [atomic number ratio] may be used. Further, as the metal oxide 230c, In: Ga: Zn = 1: 3: 4 [atomic number ratio], In: Ga: Zn = 4: 2: 3 [atomic number ratio], Ga: Zn = 2: 1 [ Atomic number ratio] or a metal oxide having Ga: Zn = 2: 5 [atomic number ratio] may be used. Further, as a specific example of the case where the metal oxide 230c has a laminated structure, a laminated structure of In: Ga: Zn = 4: 2: 3 [atomic number ratio] and Ga: Zn = 2: 1 [atomic number ratio]. , In: Ga: Zn = 4: 2: 3 [atomic number ratio] and Ga: Zn = 2: 5 [atomic number ratio], In: Ga: Zn = 4: 2: 3 [atomic number ratio] ] And gallium oxide.

At this time, the main path of the carrier is the metal oxide 230b. By configuring the metal oxide 230a and the metal oxide 230c as described above, the defect level density at the interface between the metal oxide 230a and the metal oxide 230b and the interface between the metal oxide 230b and the metal oxide 230c Can be lowered. Therefore, the influence of interfacial scattering on carrier conduction is reduced, and the transistor 200A can obtain high on-current and high frequency characteristics. When the metal oxide 230c has a laminated structure, in addition to the effect of lowering the defect level density at the interface between the metal oxide 230b and the metal oxide 230c, the constituent elements of the metal oxide 230c are It is expected to suppress diffusion to the insulator 250 side. More specifically, since the metal oxide 230c has a laminated structure and the oxide containing no In is positioned above the laminated structure, In that can be diffused to the insulator 250 side can be suppressed. Since the insulator 250 functions as a gate insulator, if In is diffused, the characteristics of the transistor become poor. Therefore, by forming the metal oxide 230c in a laminated structure, it is possible to provide a highly reliable display device.

As the metal oxide 230, it is preferable to use a metal oxide that functions as an oxide semiconductor. For example, as the metal oxide serving as the channel forming region of the metal oxide 230, it is preferable to use a metal oxide having a band gap of 2 eV or more, preferably 2.5 eV or more. As described above, by using a metal oxide having a large bandgap, the off-current of the transistor can be reduced. By using such a transistor, a display device having low power consumption can be provided.

A conductor 242 (conductor 242a and conductor 242b) that functions as a source electrode and a drain electrode is provided on the metal oxide 230b. As the conductor 242, aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium, beryllium, indium, ruthenium, iridium, strontium, lantern. It is preferable to use a metal element selected from the above, an alloy containing the above-mentioned metal element as a component, an alloy in which the above-mentioned metal element is combined, or the like. For example, tantalum nitride, titanium nitride, tungsten, a nitride containing titanium and aluminum, a nitride containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, an oxide containing strontium and ruthenium, an oxide containing lanthanum and nickel, and the like are used. Is preferable. In addition, tantalum nitride, titanium nitride, nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, oxides containing strontium and ruthenium, and oxides containing lanthanum and nickel are difficult to oxidize. It is preferable because it is a conductive material or a material that maintains conductivity even if it absorbs oxygen.

By providing the conductor 242 so as to be in contact with the metal oxide 230, the oxygen concentration may be reduced in the vicinity of the conductor 242 of the metal oxide 230. Further, in the vicinity of the conductor 242 of the metal oxide 230, a metal compound layer containing the metal contained in the conductor 242 and the component of the metal oxide 230 may be formed. In such a case, the carrier density increases in the region near the conductor 242 of the metal oxide 230, and the region becomes a low resistance region.

Here, the region between the conductor 242a and the conductor 242b is formed so as to overlap the opening of the insulator 280. As a result, the conductor 260 can be arranged in a self-aligned manner between the conductor 242a and the conductor 242b.

The insulator 250 functions as a gate insulator. The insulator 250 is preferably arranged in contact with the upper surface of the metal oxide 230c. As the insulator 250, silicon oxide, silicon oxide nitride, silicon nitride oxide, silicon nitride, silicon oxide added with fluorine, silicon oxide added with carbon, silicon oxide added with carbon and nitrogen, and silicon oxide having pores are used. be able to. In particular, silicon oxide and silicon nitride nitride are preferable because they are stable against heat.

Like the insulator 224, the insulator 250 preferably has a reduced concentration of impurities such as water and hydrogen in the insulator 250. The film thickness of the insulator 250 is preferably 1 nm or more and 20 nm or less.

A metal oxide may be provided between the insulator 250 and the conductor 260. The metal oxide preferably has a function of suppressing oxygen diffusion from the insulator 250 to the conductor 260. As a result, the oxidation of the conductor 260 by oxygen contained in the insulator 250 can be suppressed.

The metal oxide may have a function as a part of a gate insulator. Therefore, when silicon oxide, silicon oxide nitride, or the like is used for the insulator 250, it is preferable to use a metal oxide which is a high-k material having a high relative permittivity. By forming the gate insulator in a laminated structure of the insulator 250 and the metal oxide, the transistor 200A can be made into a transistor that is stable against heat and has a high relative permittivity. Therefore, it is possible to reduce the gate potential applied during transistor operation while maintaining the physical film thickness of the gate insulator. In addition, the equivalent oxide film thickness (EOT) of the insulator that functions as the gate insulator can be reduced.

Specifically, a metal oxide containing one or more selected from hafnium, aluminum, gallium, yttrium, zirconium, tungsten, titanium, tantalum, nickel, germanium, magnesium and the like can be used. .. In particular, it is preferable to use aluminum oxide, hafnium oxide, or an oxide containing aluminum and hafnium (hafnium aluminate), which is an insulator containing an oxide of one or both of aluminum or hafnium.

Although the conductor 260 is shown as a two-layer structure in FIG. 39, it may have a single-layer structure or a laminated structure of three or more layers.

Conductor 260a is described above, hydrogen atoms, hydrogen molecules, water molecules, nitrogen atom, a nitrogen molecule, nitric oxide molecule _{(N 2 O, NO, NO} 2 , etc.), a function of suppressing diffusion of impurities such as copper atoms It is preferable to use a conductor having the same. Alternatively, it is preferable to use a conductive material having a function of suppressing the diffusion of oxygen (for example, at least one oxygen atom, oxygen molecule, etc.).

Since the conductor 260a has a function of suppressing the diffusion of oxygen, it is possible to prevent the conductor 260b from being oxidized by the oxygen contained in the insulator 250 and the conductivity of the conductor 260b from being lowered. As the conductive material having a function of suppressing the diffusion of oxygen, for example, tantalum, tantalum nitride, ruthenium, ruthenium oxide and the like are preferably used.

As the conductor 260b, it is preferable to use a conductive material containing tungsten, copper, or aluminum as a main component. Further, since the conductor 260 also functions as wiring, it is preferable to use a conductor having high conductivity. For example, a conductive material containing tungsten, copper, or aluminum as a main component can be used. Further, the conductor 260b may have a laminated structure, for example, a laminated structure of titanium or titanium nitride and the conductive material.

As shown in FIGS. 39A and 39C, the side surface of the metal oxide 230 is covered with the conductor 260 in the region that does not overlap with the conductor 242 of the metal oxide 230b, in other words, in the channel formation region of the metal oxide 230. Have been placed. As a result, the electric field of the conductor 260 having a function as the first gate electrode can be easily applied to the side surface of the metal oxide 230. Therefore, the on-current of the transistor 200A can be increased and the frequency characteristics of the transistor 200A can be improved.

Like the insulator 214 and the like, the insulator 254 preferably has a function as a barrier insulating film that prevents impurities such as water and hydrogen from being mixed into the transistor 200A from the insulator 280 side. For example, the insulator 254 preferably has lower hydrogen permeability than the insulator 224. Further, as shown in FIGS. 39B and 39C, the insulator 254 includes a side surface of the metal oxide 230c, an upper surface and a side surface of the conductor 242a, an upper surface and a side surface of the conductor 242b, a side surface of the metal oxide 230a, and a metal oxide. It is preferable to have a region in contact with the side surface of the 230b and the upper surface of the insulator 224. With such a configuration, the hydrogen contained in the insulator 280 is transferred to the conductor 242a, the conductor 242b, the metal oxide 230a, the metal oxide 230b, and the metal oxide 230 from the upper surface or the side surface of the insulator 224. Invasion can be suppressed.

Further, it is preferable that the insulator 254 has a function of suppressing the diffusion of oxygen (for example, at least one oxygen atom, oxygen molecule, etc.) (the above oxygen is difficult to permeate). For example, the insulator 254 preferably has lower oxygen permeability than the insulator 280 or the insulator 224.

The insulator 254 is preferably formed by using a sputtering method. By forming the insulator 254 in an atmosphere containing oxygen by a sputtering method, oxygen can be added to the vicinity of the region of the insulator 224 in contact with the insulator 254. As a result, oxygen can be supplied from the region into the metal oxide 230 via the insulator 224. Here, since the insulator 254 has a function of suppressing the diffusion of oxygen upward, it is possible to suppress the diffusion of oxygen from the metal oxide 230 to the insulator 280. Further, since the insulator 222 has a function of suppressing the diffusion of oxygen downward, it is possible to suppress the diffusion of oxygen from the metal oxide 230 toward the substrate side. In this way, oxygen is supplied to the channel forming region of the metal oxide 230. As a result, the oxygen deficiency of the metal oxide 230 can be reduced, and the normalization of the transistor can be suppressed.

As the insulator 254, for example, it is preferable to form an insulator containing oxides of one or both of aluminum and hafnium. As the insulator containing one or both oxides of aluminum and hafnium, it is preferable to use aluminum oxide, hafnium oxide, or an oxide containing aluminum and hafnium (hafnium aluminate).

By covering the insulator 224, the insulator 250, and the metal oxide 230 with the insulator 254 having a barrier property against hydrogen, the insulator 280 is the insulator 224, the metal oxide 230, and the insulator by the insulator 254. It is separated from 250. As a result, it is possible to prevent impurities such as hydrogen from entering from the outside of the transistor 200A, so that the electrical characteristics and reliability of the transistor 200A can be improved.

The insulator 280 is provided on the insulator 224, the metal oxide 230, and the conductor 242 via the insulator 254. For example, as the insulator 280, silicon oxide, silicon oxide nitride, silicon nitride oxide, silicon oxide added with fluorine, silicon oxide added with carbon, silicon oxide added with carbon and nitrogen, silicon oxide having pores, or the like can be used. It is preferable to have. In particular, silicon oxide and silicon oxide nitride are preferable because they are thermally stable. Further, a material such as silicon oxide, silicon oxide nitride, or silicon oxide having pores is preferable because a region containing oxygen desorbed by heating can be easily formed.

It is preferable that the concentration of impurities such as water or hydrogen in the insulator 280 is reduced. Further, the upper surface of the insulator 280 may be flattened.

Like the insulator 214 and the like, the insulator 274 preferably has a function as a barrier insulating film that suppresses impurities such as water and hydrogen from being mixed into the insulator 280. As the insulator 274, for example, an insulator that can be used for the insulator 214, the insulator 254, and the like can be used.

It is preferable to provide an insulator 281 that functions as an interlayer film on the insulator 274. Like the insulator 224 and the like, the insulator 281 preferably has a reduced concentration of impurities such as water and hydrogen in the film.

The conductor 240a and the conductor 240b are arranged in the openings formed in the insulator 281, the insulator 274, the insulator 280, and the insulator 254. The conductor 240a and the conductor 240b are provided so as to face each other with the conductor 260 interposed therebetween. The height of the upper surfaces of the conductor 240a and the conductor 240b may be flush with the upper surface of the insulator 281.

An insulator 241a is provided in contact with the inner wall of the opening of the insulator 281, the insulator 274, the insulator 280, and the insulator 254, and the first conductor of the conductor 240a is formed in contact with the side surface thereof. ing. The conductor 242a is located at least a part of the bottom of the opening, and the conductor 240a is in contact with the conductor 242a. Similarly, the insulator 241b is provided in contact with the inner wall of the opening of the insulator 281, the insulator 274, the insulator 280, and the insulator 254, and the first conductor of the conductor 240b is formed in contact with the side surface thereof. Has been done. The conductor 242b is located at least a part of the bottom of the opening, and the conductor 240b is in contact with the conductor 242b.

For the conductor 240a and the conductor 240b, it is preferable to use a conductive material containing tungsten, copper, or aluminum as a main component. Further, the conductor 240a and the conductor 240b may have a laminated structure.

When the conductor 240 has a laminated structure, the above-mentioned water is used as the conductor in contact with the metal oxide 230a, the metal oxide 230b, the conductor 242, the insulator 254, the insulator 280, the insulator 274, and the insulator 281. Alternatively, it is preferable to use a conductor having a function of suppressing the diffusion of impurities such as hydrogen. For example, tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, ruthenium oxide and the like are preferably used. Further, the conductive material having a function of suppressing the diffusion of impurities such as water and hydrogen may be used in a single layer or in a laminated state. By using the conductive material, it is possible to prevent the oxygen added to the insulator 280 from being absorbed by the conductor 240a and the conductor 240b. Further, it is possible to prevent impurities such as water and hydrogen from being mixed into the metal oxide 230 from the layer above the insulator 281 through the conductor 240a and the conductor 240b.

As the insulator 241a and the insulator 241b, for example, an insulator that can be used for the insulator 254 or the like may be used. Since the insulator 241a and the insulator 241b are provided in contact with the insulator 254, impurities such as water or hydrogen from the insulator 280 and the like are suppressed from being mixed into the metal oxide 230 through the conductor 240a and the conductor 240b. can do. Further, it is possible to prevent the oxygen contained in the insulator 280 from being absorbed by the conductor 240a and the conductor 240b.

Although not shown, a conductor that functions as wiring may be arranged in contact with the upper surface of the conductor 240a and the upper surface of the conductor 240b. As the conductor that functions as wiring, it is preferable to use a conductive material containing tungsten, copper, or aluminum as a main component. Further, the conductor may have a laminated structure, for example, titanium or titanium nitride may be laminated with the conductive material. The conductor may be formed so as to be embedded in an opening provided in the insulator.

<Transistor configuration example 2>
40A, 40B, and 40C are a top view and a cross-sectional view of the transistor 200B, which can be used in the display device according to one aspect of the present invention, and the periphery of the transistor 200B. The transistor 200B is a modification of the transistor 200A.

FIG. 40A is a top view of the transistor 200B. 40B and 40C are cross-sectional views of the transistor 200B. Here, FIG. 40B is a cross-sectional view of the portion shown by the alternate long and short dash line of B1-B2 in FIG. 40A, and is also a cross-sectional view of the transistor 200B in the channel length direction. Further, FIG. 40C is a cross-sectional view of the portion shown by the alternate long and short dash line of B3-B4 in FIG. 40A, and is also a cross-sectional view of the transistor 200B in the channel width direction. In the top view of FIG. 40A, some elements are omitted for the sake of clarity.

In the transistor 200B, the conductor 242a and the conductor 242b have a region where the metal oxide 230c, the insulator 250, and the conductor 260 overlap. As a result, the transistor 200B can be a transistor having a high on-current. Further, the transistor 200B can be a transistor that is easy to control.

The conductor 260 that functions as a gate electrode has a conductor 260a and a conductor 260b on the conductor 260a. As the conductor 260a, it is preferable to use a conductive material having a function of suppressing the diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, and copper atoms. Alternatively, it is preferable to use a conductive material having a function of suppressing the diffusion of oxygen (for example, at least one oxygen atom, oxygen molecule, etc.).

Since the conductor 260a has a function of suppressing the diffusion of oxygen, the material selectivity of the conductor 260b can be improved. That is, by having the conductor 260a, it is possible to suppress the oxidation of the conductor 260b and prevent the conductivity from decreasing.

It is preferable to provide the insulator 254 so as to cover the upper surface and the side surface of the conductor 260, the side surface of the insulator 250, and the side surface of the metal oxide 230c. As the insulator 254, it is preferable to use an insulating material having a function of suppressing the diffusion of impurities such as water and hydrogen and oxygen.

By providing the insulator 254, the oxidation of the conductor 260 can be suppressed. Further, by having the insulator 254, it is possible to suppress the diffusion of impurities such as water and hydrogen contained in the insulator 280 to the transistor 200B.

<Transistor configuration example 3>
41A, 41B, and 41C are a top view and a cross-sectional view of the transistor 200C and the periphery of the transistor 200C that can be used in the display device according to one aspect of the present invention. The transistor 200C is a modification of the transistor 200A.

FIG. 41A is a top view of the transistor 200C. 41B and 41C are cross-sectional views of the transistor 200C. Here, FIG. 41B is a cross-sectional view of the portion shown by the alternate long and short dash line of C1-C2 in FIG. 41A, and is also a cross-sectional view of the transistor 200C in the channel length direction. Further, FIG. 41C is a cross-sectional view of the portion shown by the alternate long and short dash line of C3-C4 in FIG. 41A, and is also a cross-sectional view of the transistor 200C in the channel width direction. In the top view of FIG. 41A, some elements are omitted for the sake of clarity.

The transistor 200C has an insulator 250 on the metal oxide 230c and a metal oxide 252 on the insulator 250. Further, the conductor 260 is provided on the metal oxide 252, and the insulator 270 is provided on the conductor 260. Further, the insulator 271 is provided on the insulator 270.

The metal oxide 252 preferably has a function of suppressing oxygen diffusion. By providing the metal oxide 252 that suppresses the diffusion of oxygen between the insulator 250 and the conductor 260, the diffusion of oxygen into the conductor 260 is suppressed. That is, it is possible to suppress a decrease in the amount of oxygen supplied to the metal oxide 230. In addition, the oxidation of the conductor 260 can be suppressed.

The metal oxide 252 may have a function as a part of the gate electrode. For example, an oxide semiconductor that can be used as the metal oxide 230 can be used as the metal oxide 252. In that case, by forming the conductor 260 into a film by a sputtering method, the electric resistance value of the metal oxide 252 can be lowered to form a conductor. This can be called an OC (Oxide Conductor) electrode.

The metal oxide 252 may have a function as a part of the gate insulator. Therefore, when silicon oxide or silicon nitride nitride, which is a material having high thermal stability, is used for the insulator 250, it is preferable to use a metal oxide, which is a high-k material having a high relative permittivity, as the metal oxide 252. .. By adopting the laminated structure, the transistor 200C can be made into a transistor that is stable against heat and has a high relative permittivity. Therefore, it is possible to reduce the gate potential applied during transistor operation while maintaining the physical film thickness. In addition, the equivalent oxide film thickness (EOT) of an insulator that functions as a gate insulator can be thinned.

In the transistor 200C, the metal oxide 252 is shown as a single layer, but a laminated structure of two or more layers may be used. For example, a metal oxide that functions as a part of the gate electrode and a metal oxide that functions as a part of the gate insulator may be laminated and provided.

Since the transistor 200C has the metal oxide 252, when the metal oxide 252 functions as a gate electrode, the on-current of the transistor 200C can be improved without weakening the influence of the electric field from the conductor 260. Further, when the metal oxide 252 functions as a gate insulator, the distance between the conductor 260 and the metal oxide 230 can be maintained due to the physical thickness of the insulator 250 and the metal oxide 252. Thereby, the leakage current between the conductor 260 and the metal oxide 230 can be suppressed. Therefore, since the transistor 200C has a laminated structure of the insulator 250 and the metal oxide 252, the physical distance between the conductor 260 and the metal oxide 230 and the distance from the conductor 260 to the metal oxide 230 are applied. The electric field strength can be easily adjusted.

Specifically, as the metal oxide 252, an oxide semiconductor having a low resistance, which can be used for the metal oxide 230, can be used. Alternatively, a metal oxide containing one or more selected from hafnium, aluminum, gallium, yttrium, zirconium, tungsten, titanium, tantalum, nickel, germanium, magnesium and the like can be used.

In particular, it is preferable to use aluminum oxide, an oxide containing one or both oxides of aluminum or hafnium, aluminum oxide, hafnium oxide, an oxide containing aluminum and hafnium (hafnium aluminate), and the like. In particular, hafnium aluminate has higher heat resistance than hafnium oxide. Therefore, it is preferable because it is difficult to crystallize in the heat treatment in the subsequent step. The metal oxide 252 is not an essential configuration. It may be appropriately designed according to the desired transistor characteristics.

As the insulator 270, it is preferable to use an insulating material having a function of suppressing the permeation of impurities such as water and hydrogen and oxygen. For example, it is preferable to use aluminum oxide, hafnium oxide, or the like. As a result, it is possible to prevent the conductor 260 from being oxidized by oxygen from above the insulator 270. Further, it is possible to prevent impurities such as water and hydrogen from being mixed into the metal oxide 230 from above the insulator 270 via the conductor 260 and the insulator 250.

Insulator 271 functions as a hard mask. By providing the insulator 271, when processing the conductor 260, the side surface of the conductor 260 is substantially vertical, specifically, the angle formed by the side surface of the conductor 260 and the surface of the substrate is 75 degrees or more and 100 degrees or less. It can be preferably 80 degrees or more and 95 degrees or less.

Note that the insulator 271 may also function as a barrier layer by using an insulating material having a function of suppressing the permeation of impurities such as water and hydrogen and oxygen. In that case, the insulator 270 does not have to be provided.

By using the insulator 271 as a hard mask and selectively removing a part of the insulator 270, the conductor 260, the metal oxide 252, the insulator 250, and the metal oxide 230c, these aspects are substantially matched. It is possible to expose a part of the surface of the metal oxide 230b.

The transistor 200C has a region 243a and a region 243b on a part of the surface of the exposed metal oxide 230b. One of the

regions

243a or 243b functions as a source region, and the other of the

regions

243a or 243b functions as a drain region.

To form the

regions

243a and 243b, for example, an ion implantation method, an ion doping method, a plasma imaging ion implantation method, a plasma treatment, or the like is used to introduce an impurity element such as phosphorus or boron into the surface of the exposed metal oxide 230b. It can be realized by doing. In the present embodiment and the like, the “impurity element” refers to an element other than the main component element.

A metal film is formed after exposing a part of the surface of the metal oxide 230b, and then heat treatment is performed to diffuse the elements contained in the metal film into the metal oxide 230b to form

regions

243a and 243b. It can also be formed.

The electrical resistivity decreases in the region where the impurity element of the metal oxide 230b is introduced. Therefore, the region 243a and the region 243b may be referred to as an "impurity region" or a "low resistance region".

By using the insulator 271 and / or the conductor 260 as a mask, the region 243a and the region 243b can be formed in a self-alignment manner. Therefore, the region 243a and / or the region 243b and the conductor 260 do not overlap, and the parasitic capacitance can be reduced. Further, an offset region is not formed between the channel forming region and the source / drain region (region 243a or region 243b). By forming the region 243a and the region 243b in a self-alignment manner, it is possible to increase the on-current, reduce the threshold voltage, improve the operating frequency, and the like.

The transistor 200C has an insulator 271, an insulator 270, a conductor 260, a metal oxide 252, an insulator 250, and an insulator 272 on the side surface of the metal oxide 230c. The insulator 272 is preferably an insulator having a low relative permittivity. For example, silicon oxide, silicon oxide nitride, silicon nitride oxide, silicon nitride, silicon oxide added with fluorine, silicon oxide added with carbon, silicon oxide added with carbon and nitrogen, silicon oxide having pores, resin, etc. It is preferable to have. In particular, it is preferable to use silicon oxide, silicon oxide nitride, silicon nitride oxide, and silicon oxide having pores in the insulator 272 because an excess oxygen region can be easily formed in the insulator 272 in a later step. Further, silicon oxide and silicon oxide nitride are preferable because they are thermally stable. Further, the insulator 272 preferably has a function of diffusing oxygen.

An offset region may be provided between the channel formation region and the source / drain region in order to further reduce the off-current. The offset region is a region having a high electrical resistivity and is a region in which the above-mentioned impurity elements are not introduced. The formation of the offset region can be realized by introducing the above-mentioned impurity element after the formation of the insulator 272. In this case, the insulator 272 also functions as a mask in the same manner as the insulator 271 and the like. Therefore, no impurity element is introduced into the region of the metal oxide 230b that overlaps with the insulator 272, and the electrical resistivity in that region can be kept high.

The transistor 200C has an insulator 272 and an insulator 254 on the metal oxide 230. The insulator 254 is preferably formed by a sputtering method. By using the sputtering method, an insulator having few impurities such as water or hydrogen can be formed.

Note that the oxide film formed by the sputtering method may extract hydrogen from the structure to be filmed. Therefore, when the insulator 254 is formed by the sputtering method, the insulator 254 absorbs hydrogen and water from the metal oxide 230 and the insulator 272. Thereby, the hydrogen concentration of the metal oxide 230 and the insulator 272 can be reduced.

<Transistor constituent materials>
The constituent materials that can be used for the transistor will be described.

<< Board >>
As the substrate on which the transistor 200A, the transistor 200B, or the transistor 200C is formed, for example, an insulator substrate, a semiconductor substrate, or a conductor substrate may be used. Examples of the insulator substrate include a glass substrate, a quartz substrate, a sapphire substrate, a stabilized zirconia substrate (yttria-stabilized zirconia substrate, etc.), a resin substrate, and the like. Further, as the semiconductor substrate, for example, there are a semiconductor substrate such as silicon and germanium, or a compound semiconductor substrate made of silicon carbide, silicon germanium, gallium arsenide, indium phosphide, zinc oxide and gallium oxide. Further, there is a semiconductor substrate having an insulator region inside the above-mentioned semiconductor substrate, for example, an SOI (Silicon On Insulator) substrate and the like. Examples of the conductor substrate include a graphite substrate, a metal substrate, an alloy substrate, a conductive resin substrate, and the like. Alternatively, there are a substrate having a metal nitride, a substrate having a metal oxide, and the like. Further, there are a substrate in which a conductor or a semiconductor is provided in an insulator substrate, a substrate in which a conductor or an insulator is provided in a semiconductor substrate, a substrate in which a semiconductor or an insulator is provided in a conductor substrate, and the like. Alternatively, those on which an element is provided may be used. Elements provided on the substrate include capacitive elements, resistance elements, switch elements, storage elements, and the like.

A flexible substrate may be used as the substrate, and the transistor 200A, the transistor 200B, or the transistor 200C may be formed directly on the flexible substrate. Alternatively, a release layer may be provided between the substrate and the transistor. The release layer can be used to form a part or all of the transistor on it, separate it from the substrate, and transfer it to another substrate. At that time, the transistor can be reprinted on a substrate having inferior heat resistance or a flexible substrate.

<< Insulator >>
Examples of the insulator include oxides, nitrides, oxide nitrides, nitride oxides, metal oxides, metal oxide nitrides, metal nitride oxides and the like having insulating properties.

For example, as transistors become finer and more integrated, problems such as leakage current may occur due to the thinning of the gate insulator. By using a high-k material for an insulator that functions as a gate insulator, it is possible to reduce the voltage during transistor operation while maintaining the physical film thickness. On the other hand, by using a material having a low relative permittivity for the insulator that functions as an interlayer film, it is possible to reduce the parasitic capacitance generated between the wirings. Therefore, it is advisable to select the material according to the function of the insulator.

As insulators with high relative dielectric constant, gallium oxide, hafnium oxide, zirconium oxide, oxides with aluminum and hafnium, nitrides with aluminum and hafnium, oxides with silicon and hafnium, and nitrides with silicon and hafnium. There are materials, or nitrides having silicon and hafnium.

As an insulator with a low relative permittivity, it has silicon oxide, silicon oxide nitride, silicon nitride oxide, silicon nitride, silicon oxide added with fluorine, silicon oxide added with carbon, silicon oxide added with carbon and nitrogen, and vacancies. There are silicon oxide, resin, etc.

A transistor using an oxide semiconductor is surrounded by an insulator (insulator 214, insulator 222, insulator 254, insulator 274, etc.) having a function of suppressing the permeation of impurities such as hydrogen and oxygen. The electrical characteristics of the can be stabilized. As an insulator having a function of suppressing the permeation of impurities such as hydrogen and oxygen, for example, boron, carbon, nitrogen, oxygen, fluorine, magnesium, aluminum, silicon, phosphorus, chlorine, argon, gallium, germanium, tantalum, zirconium, Insulators containing lanthanum, neodymium, hafnium, or tantalum may be used in single layers or in layers. Specifically, as an insulator having a function of suppressing the permeation of impurities such as hydrogen and oxygen, aluminum oxide, magnesium oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, and hafnium oxide. , Or metal oxides such as tantalum oxide, and metal nitrides such as aluminum nitride, titanium aluminum nitride, titanium nitride, silicon nitride, and silicon nitride can be used.

The insulator that functions as a gate insulator is preferably an insulator that has a region containing oxygen that is desorbed by heating. For example, by forming silicon oxide or silicon oxide nitride having a region containing oxygen desorbed by heating in contact with the metal oxide 230, it is possible to compensate for the oxygen deficiency of the metal oxide 230.

<< Conductor >>
As conductors, aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium, beryllium, indium, ruthenium, iridium, strontium, lanthanum, etc. It is preferable to use a metal element selected from the above, an alloy containing the above-mentioned metal element as a component, an alloy in which the above-mentioned metal element is combined, or the like. For example, tantalum nitride, titanium nitride, tungsten, a nitride containing titanium and aluminum, a nitride containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, an oxide containing strontium and ruthenium, an oxide containing lanthanum and nickel, and the like are used. Is preferable. In addition, tantalum nitride, titanium nitride, nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, oxides containing strontium and ruthenium, and oxides containing lanthanum and nickel are difficult to oxidize. It is preferable because it is a conductive material or a material that maintains conductivity even if it absorbs oxygen. Further, a semiconductor having high electrical conductivity typified by polycrystalline silicon containing an impurity element such as phosphorus, and SiO such as nickel silicide may be used.

A plurality of conductors formed of the above materials may be laminated and used. For example, a laminated structure may be formed in which the above-mentioned material containing a metal element and a conductive material containing oxygen are combined. Further, a laminated structure may be formed in which the above-mentioned material containing a metal element and a conductive material containing nitrogen are combined. Further, a laminated structure may be formed in which the above-mentioned material containing a metal element, a conductive material containing oxygen, and a conductive material containing nitrogen are combined.

When a metal oxide is used in the channel forming region of the transistor, the conductor functioning as the gate electrode uses a laminated structure in which the above-mentioned material containing a metal element and a conductive material containing oxygen are combined. Is preferable. In this case, a conductive material containing oxygen may be provided on the channel forming region side. By providing the conductive material containing oxygen on the channel forming region side, oxygen separated from the conductive material can be easily supplied to the channel forming region.

In particular, as a conductor that functions as a gate electrode, it is preferable to use a conductive material containing a metal element and oxygen contained in a metal oxide in which a channel is formed. Further, the above-mentioned conductive material containing a metal element and nitrogen may be used. For example, a conductive material containing nitrogen such as titanium nitride and tantalum nitride may be used. In addition, indium tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, and silicon were added. Indium tin oxide may be used. Further, indium gallium zinc oxide containing nitrogen may be used. By using such a material, it may be possible to capture hydrogen contained in the metal oxide in which the channel is formed. Alternatively, it may be possible to capture hydrogen mixed in from an outer insulator or the like.

<< Metal Oxide >>
The metal oxide preferably contains at least indium or zinc. In particular, it preferably contains indium and zinc. Moreover, in addition to them, it is preferable that aluminum, gallium, yttrium, tin and the like are contained. Further, one or more kinds selected from boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium and the like may be contained.

Here, consider the case where the metal oxide is an In-M-Zn oxide having indium, element M, and zinc. The element M is aluminum, gallium, yttrium, tin, or the like. Other elements applicable to the element M include boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium and the like. However, as the element M, a plurality of the above-mentioned elements may be combined in some cases.

In addition, in this specification and the like, a metal oxide having nitrogen may also be collectively referred to as a metal oxide. Further, a metal oxide having nitrogen may be referred to as a metal oxynitride.

[Structure of metal oxide]
Oxide semiconductors (metal oxides) are divided into single crystal oxide semiconductors and other non-single crystal oxide semiconductors. As non-monocrystalline oxide semiconductors, for example, CAAC-OS, polycrystalline oxide semiconductors, nc-OS (nanocrystalline oxide semiconductor), pseudo-amorphous oxide semiconductors (a-like OS: amorphous-like oxide semiconductor), and There are amorphous oxide semiconductors and the like.

[impurities]
The influence of each impurity in the metal oxide will be described. If the metal oxide contains an alkali metal or an alkaline earth metal, it may form a defect level and form a carrier. Therefore, a transistor using a metal oxide containing an alkali metal or an alkaline earth metal in the channel forming region tends to have a normally-on characteristic. Therefore, it is preferable to reduce the concentration of alkali metal or alkaline earth metal in the metal oxide. Specifically, the concentration of alkali metal or alkaline earth metal in the metal oxide obtained by secondary ion mass spectrometry (SIMS) is 1 × 10 ¹⁸ atoms / cm ³ or less, preferably 3 or less. 2 × 10 ¹⁶ atoms / cm ³ or less.

Hydrogen contained in metal oxides reacts with oxygen that binds to metal atoms to become water. Therefore, hydrogen contained in the metal oxide may form an oxygen deficiency in the metal oxide. When hydrogen enters the oxygen deficiency, electrons that are carriers may be generated. In addition, a part of hydrogen may be combined with oxygen that is bonded to a metal atom to generate an electron as a carrier. Therefore, a transistor using a metal oxide containing hydrogen tends to have a normally-on characteristic.

Therefore, it is preferable that hydrogen in the metal oxide is reduced as much as possible. Specifically, in metal oxides, the hydrogen concentration obtained by SIMS ^{is less than 1 × 10 20} atoms / cm ³ , preferably less than 1 × 10 ¹⁹ atoms / cm ³ , more preferably 5 × 10 ¹⁸ atoms / cm. ^{Less than 3} , more preferably less than 1 × 10 ¹⁸ atoms / cm ³ . By using a metal oxide in which impurities are sufficiently reduced in the channel forming region of the transistor, stable electrical characteristics can be imparted to the transistor.

It is preferable to use a thin film with high crystallinity as the metal oxide used for the semiconductor of the transistor. By using the thin film, the stability or reliability of the transistor can be improved. Examples of the thin film include a thin film of a single crystal metal oxide and a thin film of a polycrystalline metal oxide. However, in order to form a thin film of a single crystal metal oxide or a thin film of a polycrystalline metal oxide on a substrate, a step of high temperature or laser heating is required. Therefore, the cost of the manufacturing process increases, and the throughput also decreases.

: 10: Electronic device, 10a: Electronic device, 10b: Electronic device, 11: Housing, 11a: First part, 11b: Second part, 11c: Third part, 11d: Fourth part, 11e : 5th part, 11f: 6th part, 11g: 7th part, 11h: 8th part, 11i: 9th part, 12a: 1st part, 12b: 2nd part, 12c: Third part, 12d: Fourth part, 12e: Fifth part, 13: Display device, 13L: Display device, 13R: Display device, 15L: Optical member, 15R: Optical member, 17: Detection device, 17L : Detection device, 17R: Detection device, 18: Storage device, 19: Arithmetic device, 21: Input / output device, 23: Server, 25: Fixture, 27: Fastener, 29: Separator, 31: Electronic device, 33: Display unit, 41: Space, 43: Opening, 45: Adjustment mechanism, 53: Feature extraction unit, 54: Estimating unit, 55: Information generation unit, 61: Input layer, 62: Intermediate layer, 63: Output layer, 71 : Data, 72: Data, 73: Data, 74: Data, 81: Information, 82: Information, 91: Information, 92: Information, 93: Information, 94: Information, 95: Information, 200A: Conductor, 200B: Conductor , 200C: Transistor, 205: Conductor, 214: Insulator, 216: Insulator, 222: Insulator, 224: Insulator, 230: Metal Oxide, 230a: Metal Oxide, 230b: Metal Oxide, 230c: Metal oxide, 240: conductor, 240a: conductor, 240b: conductor, 241: insulator, 241a: insulator, 241b: insulator, 242: conductor, 242a: conductor, 242b: conductor, 243a : Region, 243b: Region, 244: Insulator, 250: Insulator, 252: Metal Oxide, 254: Insulator, 260: Conductor, 260a: Conductor, 260b: Conductor, 270: Insulator, 271: Insulator, 272: Insulator, 274: Insulator, 280: Insulator, 281: Insulator, 301a: Conductor, 301b: Conductor, 305: Conductor, 311: Conductor, 313: Conductor, 317: Conductor, 321: Lower electrode, 323: Insulator, 325: Upper electrode, 331: Conductor, 333: Conductor, 335: Conductor, 337: Conductor, 341: Conductor, 343: Conductor, 347: Conductor, 351: Conductor, 353: Conductor, 355: Conductor, 357: Conductor, 361: Insulator, 363: Insulator, 401: Circuit, 403: Element Separation Layer, 405: Insulator, 407: Insulation, 409: Insulation , 411: Insulator, 413: Insulator, 415: Insulator, 417: Insulator, 419: Insulator, 421: Insulator, 441: Transistor, 443: Conductor, 445: Insulator, 447: Semiconductor Region, 449a: Low resistance region, 449b: Low resistance region, 451: Conductor, 453: Conductor, 455: Conductor, 457: Conductor, 459: Conductor, 461: Conductor, 463: Conductor, 465: Conductor Body, 467: Conductor, 469: Conductor, 471: Conductor, 501: Insulator, 503: Insulator, 505: Insulator, 507: Insulator, 509: Insulator, 511: Transistor, 513: Transistor, 515: Capacitive element, 517: Capacitive element, 520: Circuit, 521: Conductor, 525: Transistor, 527: Conductor, 259: Conductor, 535: Wiring, 537: Wiring, 539: Wiring, 541: Wiring, 543: Wiring 545: Wiring, 552: Conductor, 554: Conductor, 562: Capacitive element, 572: Light emitting device, 572_1: Light emitting device, 572_2: Light emitting device, 601: Transistor, 602: Transistor, 603: Conductor, 613: Insulator, 614 : Insulator, 616: Insulator, 622: Insulator, 624: Insulator, 644: Insulator, 654: Insulator, 674: Insulator, 680: Insulator, 681: Insulator, 701: Substrate, 705: Substrate, 712: Sealing material, 716: FPC, 721: Hole injection layer, 722: Hole transport layer, 723: Light emitting layer, 724: Electron transport layer, 725: Electron injection layer, 730: Insulator, 732: Seal Stop layer, 734: Insulator, 736: Colored layer, 738: Light-shielding layer, 750: Transistor, 760: Connection electrode, 772: Conductor, 778: Structure, 780: Anisotropic conductor, 786: EL layer, 786a: EL layer, 786b: EL layer, 786c: EL layer, 788: Conductor, 790: Capacitive element, 792: Charge generation layer, 810: Display device, 820: Layer, 821: Gate driver circuit, 822: Source driver Circuit, 823: Region, 824: Demultiplexer circuit, 830: Layer, 831: Wiring, 831-1: Wiring, 831-2: Wiring, 831-1: Wiring, 831-2: Wiring, 832: Wiring, 832-1: Wiring, 832-2: Wiring, 832_1: Wiring, 832_2: Wiring, 833: Pixel array, 834: Pixel, 835a: Wiring, 835b: Wiring, 840: Circuit, 993IR: Colored layer, 993R: Colored layer, 995: Substrate , 1001: Substrate, 1002: Insulator, 1003: Transistor, 1004: Insulator, 1005: Insulator, 1010: Photoelectric conversion device, 1010_1: Photoelectric conversion device, 1010_2: Photoelectric conversion device, 1011: Active layer

Claims

It has a detection device, an arithmetic unit, and a housing.
The housing has a space at a position where it overlaps with the user's nose when worn by the user.
The detection device is located between the housing and the user's nose.
The detection device has a function of acquiring user data regarding the user's emotions and outputting the user data to the arithmetic unit.
The arithmetic unit is an electronic device having a function of generating display data based on the user data and outputting the display data.
It has a detection device, an arithmetic unit, and a housing.
The housing has a space at a position where it overlaps with the user's nose when worn by the user.
The detection device is located inside the housing so as to overlap the user's nose.
The detection device has a function of acquiring user data regarding the user's emotions and outputting the user data to the arithmetic unit.
The arithmetic unit is an electronic device having a function of generating display data based on the user data and outputting the display data.
It has a detection device, an arithmetic unit, a display device, and a housing.
The housing has a space at a position where it overlaps with the user's nose when worn by the user.
The detection device is located between the housing and the user's nose.
The detection device has a function of acquiring user data regarding the user's emotions and outputting the user data to the arithmetic unit.
The arithmetic unit is an electronic device having a function of generating display data based on the user data and outputting the display data to the display device.
It has a detection device, an arithmetic unit, a display device, and a housing.
The housing has a space at a position where it overlaps with the user's nose when worn by the user.
The detection device is located inside the housing so as to overlap the user's nose.
The detection device has a function of acquiring user data regarding the user's emotions and outputting the user data to the arithmetic unit.
The arithmetic unit is an electronic device having a function of generating display data based on the user data and outputting the display data to the display device.
In any one of claims 1 to 4,
The detection device is an electronic device having any one or more of a temperature sensor, a humidity sensor, a microphone, and an image pickup device.
In any one of claims 1 to 5,
The user data is an electronic device having any one or more of temperature, humidity, sound, or an image.
In any one of claims 1 to 6,
Has an adjustment mechanism
The adjustment mechanism is an electronic device having a function of adjusting the angle of the detection device with respect to the housing.
In any one of claims 1 to 4,
The detection device has an imaging device and has an imaging device.
The detection device has a function of outputting an captured image of the user as the user data to the arithmetic unit.
The arithmetic unit is an electronic device having a function of estimating the emotion of the user from the user data and generating the display data based on the estimated emotion.
In claim 8.
The user data is an electronic device that is an image of a portion including the nose of the user.
In claim 8.
The user data is an electronic device that is an image of a portion including the mouth of the user.
In any one of claims 8 to 10,
The estimation is an electronic device using a neural network.