WO2021107042A1 - Laser oscillator - Google Patents

Laser oscillator Download PDF

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Publication number
WO2021107042A1
WO2021107042A1 PCT/JP2020/044088 JP2020044088W WO2021107042A1 WO 2021107042 A1 WO2021107042 A1 WO 2021107042A1 JP 2020044088 W JP2020044088 W JP 2020044088W WO 2021107042 A1 WO2021107042 A1 WO 2021107042A1
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WO
WIPO (PCT)
Prior art keywords
laser
diffraction grating
wavelength band
laser beam
optical path
Prior art date
Application number
PCT/JP2020/044088
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French (fr)
Japanese (ja)
Inventor
清隆 江泉
山下　隆之
諒 石川
加藤　直也
元希 森岡
Original Assignee
パナソニックＩｐマネジメント株式会社
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Publication of WO2021107042A1 publication Critical patent/WO2021107042A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30

Definitions

  • the present invention relates to a laser oscillator.
  • Patent Document 1 discloses a laser processing apparatus in which laser light emitted from a plurality of fiber lasers having different wavelengths is beam-synthesized on the same optical axis by using a WDM coupler as a wavelength-synthesizing element for beam synthesis. Has been done.
  • Patent Document 1 since a plurality of fiber lasers are provided in order to emit laser light having different wavelengths, there is a problem that the number of parts increases, the cost increases, and the device becomes large. Further, since the WDM coupler is used for beam synthesis, there is a problem that the optical axis adjustment work becomes complicated.
  • the present invention has been made in view of this point, and an object of the present invention is to enable the wavelength of a laser beam to be changed according to a processing purpose with a relatively simple configuration.
  • the first aspect is a laser oscillator capable of emitting laser light having different wavelength bands, which emits a plurality of first emitting portions for emitting laser light in the first wavelength band and laser light in the second wavelength band.
  • a first diffraction grating that combines a plurality of second emission units, a plurality of laser beams in the first wavelength band, a second diffraction grating that combines a plurality of laser beams in the second wavelength band, and the first emission.
  • the control unit includes a unit, a second emission unit, and a control unit that controls the operation of the switching mechanism, and the control unit emits laser light in the first wavelength band and puts the first diffraction grating on the optical path.
  • the first operation of arranging the grating and the second operation of emitting the laser beam of the second wavelength band and arranging the second diffraction grating on the optical path are alternately executed at a predetermined cycle. ..
  • the switching mechanism switches the first diffraction grating or the second diffraction grating arranged on the optical path of the laser light according to the wavelength band of the laser light. Specifically, when the laser beam of the first wavelength band is emitted from the first emission unit, the first diffraction grating is arranged on the optical path of the laser beam. On the other hand, when the laser beam of the second wavelength band is emitted from the second emission unit, the second diffraction grating is arranged on the optical path of the laser beam.
  • the optical axis of the laser light coupled by the first diffraction grating or the second diffraction grating becomes the same. can do. Therefore, it is possible to transmit the laser beam while keeping the optical system after the diffraction grating in common.
  • control unit alternately executes the first operation and the second operation at a predetermined cycle.
  • first operation the laser beam of the first wavelength band is emitted and the first diffraction grating is arranged on the optical path.
  • second operation the laser beam of the second wavelength band is emitted and the second diffraction grating is arranged on the optical path.
  • the laser beam in the first wavelength band and the laser beam in the second wavelength band are alternately emitted at a predetermined period, so that the laser beam in the first wavelength band and the laser beam in the second wavelength band are combined.
  • the shape allows processing of the object to be processed.
  • the laser beam in the first wavelength band has a narrowed beam diameter by alternately emitting the laser beam in the first wavelength band and the laser beam in the second wavelength band while focusing on the laser beam in the first wavelength band.
  • the laser beam of the second wavelength band is emitted ahead of the laser beam of the first wavelength band in the processing direction, it is possible to preheat the object to be processed.
  • the second aspect is characterized in that, in the first aspect, the control unit changes the execution time of the first operation and the execution time of the second operation.
  • the execution time of the first operation and the second operation can be changed according to the purpose of laser machining.
  • a third aspect is characterized in that, in the first or second aspect, the control unit makes the execution time of the second operation longer than the execution time of the first operation.
  • the execution time of the second operation is made longer than the execution time of the first operation.
  • the time for emitting the laser light (blue laser light) in the second wavelength band is set to the laser in the first wavelength band. Make it longer than the time to emit light (infrared laser light).
  • a fourth aspect is characterized in that, in the first or second aspect, the control unit makes the execution time of the first operation longer than the execution time of the second operation.
  • the execution time of the first operation is made longer than the execution time of the second operation.
  • the object to be processed is made of iron, which is a low-reflection material having a high laser absorption rate
  • the time for emitting the laser beam (red laser beam) in the first wavelength band is set to the laser beam in the second wavelength band (red laser beam). Make it longer than the time to emit the blue laser beam).
  • a fifth aspect is, in any one of the first to fourth aspects, the switching mechanism comprises a support shaft on which the first diffraction grating and the second diffraction grating are supported at intervals in the circumferential direction. It is characterized by having a rotating portion for arranging the first diffraction grating or the second diffraction grating on the optical path of the laser beam by rotating the support shaft.
  • the first diffraction grating or the second diffraction grating is arranged on the optical path of the laser beam by rotating the support shaft by the rotating portion. Thereby, the first diffraction grating or the second diffraction grating can be switched according to the wavelength band of the laser light.
  • a sixth aspect is that in any one of the first to fourth aspects, the switching mechanism causes one of the first diffraction grating and the second diffraction grating to advance onto the optical path of the laser beam, and at the same time, It is characterized by having an advancing / retreating portion for retracting the first diffraction grating or the other of the second diffraction grating from the optical path.
  • one of the first diffraction grating or the second diffraction grating is advanced to the optical path of the laser beam, and the other of the first diffraction grating or the second diffraction grating is retracted from the optical path by the advancing / retreating portion. ing.
  • the first diffraction grating or the second diffraction grating can be switched according to the wavelength band of the laser light.
  • a seventh aspect includes, in any one of the first to sixth aspects, an input unit for inputting information about the material of the object to be processed by the laser beam, and the switching mechanism is the input unit. It is characterized in that the first diffraction grating or the second diffraction grating is switched based on the input information.
  • the first diffraction grating or the second diffraction grating is switched based on the information regarding the material of the processing object input in the input unit.
  • the first diffraction grating or the second diffraction grating can be switched according to the laser beam in the wavelength band most suitable for processing the object to be processed.
  • the wavelength of the laser beam can be changed according to the processing purpose with a relatively simple configuration.
  • FIG. 1 is a schematic view showing a configuration of a laser processing apparatus according to the first embodiment.
  • FIG. 2 is a diagram showing a configuration of a laser oscillator when a laser beam of the first wavelength band is emitted.
  • FIG. 3 is a diagram showing a configuration of a laser oscillator when a laser beam in the second wavelength band is emitted.
  • FIG. 4 is a diagram showing the configuration of the first diffraction grating.
  • FIG. 5 is a diagram showing the configuration of the second diffraction grating.
  • FIG. 6 is a diagram showing switching timing of laser light in the first wavelength band and the second wavelength band.
  • FIG. 7 is a diagram showing a beam profile in which laser beams of the first wavelength band and the second wavelength band are superimposed.
  • FIG. 1 is a schematic view showing a configuration of a laser processing apparatus according to the first embodiment.
  • FIG. 2 is a diagram showing a configuration of a laser oscillator when a laser beam of the first wavelength
  • FIG. 8 is a side sectional view showing a state in which the laser beam L1 in the first wavelength band is emitted to the object to be processed.
  • FIG. 9 is a side sectional view showing a state in which the laser beam L2 in the second wavelength band is emitted to the object to be processed.
  • FIG. 10 is a diagram showing a configuration of a laser oscillator when a laser beam of the first wavelength band is emitted in the second embodiment.
  • FIG. 11 is a diagram showing a configuration of a laser oscillator when a laser beam of a second wavelength band is emitted.
  • FIG. 12 is a diagram showing a configuration of a laser oscillator when a laser beam of the first wavelength band is emitted in the third embodiment.
  • FIG. 13 is a diagram showing a configuration of a laser oscillator when a laser beam in the second wavelength band is emitted.
  • FIG. 14 is a diagram showing switching timing of laser light in the first wavelength band and the second wavelength band in other embodiments.
  • FIG. 15 is a diagram showing switching timing of laser light in the first wavelength band, the second wavelength band, and the third wavelength band in other embodiments.
  • FIG. 16 is a diagram showing a beam profile in which laser beams in the first wavelength band, the second wavelength band, and the third wavelength band are superimposed.
  • the laser processing device 1 includes a laser oscillator 10, an optical fiber 2, a laser processing head 3, an assist gas supply device 4, a manipulator 5, a control unit 6, and an input unit 7. I have.
  • the laser oscillator 10 outputs laser light and incidents on the optical fiber 2.
  • the optical fiber 2 transmits the laser light output by the laser oscillator 10 to the laser processing head 3.
  • the laser processing head 3 has a collimator lens (not shown) and a condenser lens (not shown).
  • the collimator lens parallelizes the first laser beam L1 in the first wavelength band and the second laser beam L2 in the second wavelength band emitted from the emission end of the optical fiber 2.
  • the condenser lens collects the first laser beam L1 and the second laser beam L2 parallelized by the collimator lens.
  • the laser processing head 3 emits the laser light transmitted by the optical fiber 2 and condensed by a condenser lens (not shown) to the processing object W.
  • a condenser lens (not shown)
  • the material of the object W to be processed mild steel, stainless steel, aluminum alloy, copper and the like are used.
  • the assist gas supply device 4 is connected to the laser processing head 3.
  • the assist gas supply device 4 supplies the assist gas to the laser processing head 3.
  • the manipulator 5 changes the position and angle of the laser processing head 3 with a high degree of freedom. As a result, the laser beam emitted from the laser processing head 3 can be emitted to the processing position of the processing object W.
  • the control unit 6 is connected to the laser oscillator 10, the assist gas supply device 4, and the manipulator 5.
  • the control unit 6 controls the output of the laser beam from the laser oscillator 10, the amount of assist gas supplied from the assist gas supply device 4, and the operation of the manipulator 5.
  • the input unit 7 inputs various set values related to the operation of the laser oscillator 10. For example, information about the material of the processing object W to be processed by the laser beam is input to the input unit 7. In the example shown in FIG. 1, the input unit 7 is connected to the laser oscillator 10, but the input unit 6 may be connected to the control unit 6.
  • the laser oscillator 10 includes a first semiconductor laser device 20, a second semiconductor laser device 25, a first diffraction grating 11, a second diffraction grating 12, a switching mechanism 30, and an output coupler 15. And a condenser lens 16.
  • the operations of the first semiconductor laser device 20, the second semiconductor laser device 25, and the switching mechanism 30 are controlled by the control unit 6.
  • the first semiconductor laser device 20 has a plurality of first laser diodes 21 (first emission unit).
  • the first laser diode 21 has a plurality of emitters (not shown).
  • the first laser diode 21 emits the first laser beam L1 by synthesizing the outputs of a plurality of emitters.
  • a plurality of condenser lenses are arranged on the exit side of the plurality of first laser diodes 21 (not shown).
  • the first laser beam L1 emitted from the plurality of first laser diodes 21 may be focused by one condenser lens.
  • the first laser diode 21 is composed of laser diodes LD11 to LD1n (n is a natural number) that emits the first laser beam L1 in the same wavelength band.
  • the first wavelength band of the first laser beam L1 emitted from the first laser diode 21 is 900 nm.
  • the first laser beam L1 is an infrared laser beam.
  • the second semiconductor laser device 25 has a plurality of second laser diodes 26 (second emitting portions).
  • the second laser diode 26 has a plurality of emitters (not shown).
  • the second laser diode 26 emits the second laser beam L2 by combining the outputs of the plurality of emitters.
  • a plurality of condenser lenses are arranged on the exit side of the plurality of second laser diodes 26 (not shown).
  • the second laser beam L2 emitted from the plurality of second laser diodes 26 may be focused by one condenser lens.
  • the second laser diode 26 is composed of laser diodes LD21 to LD2n (n is a natural number) that emits the second laser beam L2 in the same wavelength band.
  • n is a natural number
  • the second wavelength band of the second laser beam L2 emitted from the second laser diode 26 is 450 nm.
  • the second laser beam L2 is a blue laser beam.
  • the first wavelength band of the first laser beam L1 emitted from the first laser diode 21 and the second wavelength band of the second laser beam L2 emitted from the second laser diode 26 are different.
  • the first diffraction grating 11 combines a plurality of first laser beams L1 in the first wavelength band.
  • the second diffraction grating 12 couples a plurality of second laser beams L2 in the second wavelength band.
  • the switching mechanism 30 has a support shaft 31 and a rotating portion 32.
  • the first diffraction grating 11 and the second diffraction grating 12 are supported on the support shaft 31 at intervals in the circumferential direction.
  • the support shaft 31 can be rotated by the rotating portion 32.
  • the rotating unit 32 is composed of, for example, a motor and a speed reducer. By rotating the support shaft 31 by the rotating unit 32, the first diffraction grating 11 or the second diffraction grating 12 arranged on the optical path of the laser beam can be switched.
  • the first laser beam L1 in the first wavelength band is emitted from the plurality of first laser diodes 21. Therefore, the rotating unit 32 rotates the support shaft 31 so that the first diffraction grating 11 is arranged on the optical path of the laser beam.
  • the rotating unit 32 rotates the support shaft 31 so that the second diffraction grating 12 is arranged on the optical path of the laser beam.
  • the end portion of the first semiconductor laser device 20 on the first diffraction grating 11 side is the laser emission end.
  • the end of the first semiconductor laser device 20 opposite to the laser emitting end is a total reflection end that totally reflects the laser light.
  • the first laser beam L1 emitted from the laser emission end of the first semiconductor laser device 20 passes through the first diffraction grating 11 and is partially reflected by the output coupler 15.
  • the first laser beam L1 reflected by the output coupler 15 passes through the first diffraction grating 11 and returns to the emitted first semiconductor laser device 20.
  • the first laser beam L1 returned to the first semiconductor laser device 20 is reflected at the total reflection end of the first semiconductor laser device 20.
  • the laser oscillator 10 is configured between the total reflection end of the first semiconductor laser device 20 and the output coupler 15 via the first diffraction grating 11. This configuration is called an external resonator because the laser beam is oscillated including the region outside the first semiconductor laser device 20. Since the second semiconductor laser device 25 has the same configuration, the description thereof will be omitted.
  • the first laser light L1 emitted from the plurality of first laser diodes 21 is incident on the first diffraction grating 11 from different directions when viewed from the first diffraction grating 11.
  • the first diffraction grating 11 has a feature that a plurality of first laser beams L1 having different incident angles are emitted at a common emission angle.
  • the first semiconductor laser device 20 and the output coupler 15 form an external cavity via the first diffraction grating 11, so that the beam quality of each first laser beam L1 is not deteriorated. It is possible to obtain the first laser beam L1 having a higher output, which is the sum of the outputs.
  • the rotating unit 32 switches between the first diffraction grating 11 and the second diffraction grating 12 based on the information regarding the material of the processing object W input by the input unit 7.
  • the longer the wavelength band of the laser beam 800 to 900 nm
  • the shorter the wavelength band of the laser beam for example, 400 to 450 nm
  • the laser beam of the first wavelength band or the second wavelength band is selected according to the material of the object W to be processed, and the first diffraction grating 11 or the first diffraction grating 11 or the second wavelength band corresponding to the first wavelength band or the second wavelength band is selected. It is switched to the second diffraction grating 12.
  • the focal length of the condenser lens 16 may shift by the wavelength difference. Therefore, after switching the wavelength of the laser light, the distance between the optical fiber 2 and the condenser lens 16 may be finely adjusted, or the chromatic aberration of the condenser lens 16 may be corrected.
  • the laser beam emitted to the workpiece W is switched at a predetermined cycle.
  • control unit 6 alternately executes the first operation and the second operation at a predetermined cycle.
  • first operation the first laser beam L1 in the first wavelength band is emitted and the first diffraction grating 11 is arranged on the optical path (see FIG. 2).
  • second operation the second laser beam L2 in the second wavelength band is emitted and the second diffraction grating 12 is arranged on the optical path (see FIG. 3).
  • the control unit 6 changes the execution time of the first operation and the second operation according to the purpose of laser machining.
  • the execution time T2 of the second operation is made longer than the execution time T1 of the first operation.
  • it is set in the range of 0.1 ⁇ T1 / T2 ⁇ 1.
  • the first laser beam L1 in the first wavelength band and the second laser beam L2 in the second wavelength band are alternately emitted at a predetermined cycle to obtain the first wavelength band and the second wavelength band.
  • the object W to be processed can be processed with a beam shape in which laser beams are combined (see FIG. 7).
  • the laser light of the first wavelength band and the laser light of the second wavelength band are alternately emitted while focusing on the first laser light L1 of the first wavelength band.
  • the center of the beam required for processing the processing target object W is centered.
  • the molten pool 41 can be formed by securing sufficient energy.
  • the opening area of the keyhole 42 is widened and generated in the vicinity of the opening. It is possible to suppress the occurrence of easy spatter. Further, by widening the opening area of the keyhole 42, the collapse of the keyhole 42 can be suppressed. As a result, spatter generated by the collapse of the keyhole 42 can be suppressed.
  • the second laser beam L2 in the second wavelength band in which the beam diameter is widened in front of the first laser beam L1 in the first wavelength band in the processing direction (direction of the white arrow in the figure). Is emitted, so that the object W to be processed can be preheated.
  • the lap ratio of the first laser beam L1 in the first wavelength band is set, for example, in the range of 60% to 80%.
  • the lap ratio is preferably set to 60%.
  • the lap ratio is an index indicating the degree of overlap between the first laser beam L1 emitted at the current position and the first laser beam L1 emitted at the position one pulse before in pulse welding.
  • the lap ratio is a beam of laser light of the first laser beam L1 emitted at the current position in the processing direction and the first laser beam L1 emitted at the position one pulse before in pulse welding. It is an index showing the degree of overlap of the diameter (spot diameter) or the nugget diameter of the laser beam (the degree of overlap of the diameter (nugget diameter) of the circularly melted welded portion by the laser beam of pulse welding).
  • the lap ratio is represented by b / a.
  • the lap ratio of the laser light in the first wavelength band and the second wavelength band is set in the range of 60% to 80%.
  • the lap ratio is preferably set to 60%.
  • the lap ratio is the degree of overlap between the first laser beam L1 in the first wavelength band emitted at the current position and the second laser beam L2 in the second wavelength band emitted at the position one pulse before in pulse welding. It is an index showing.
  • the lap ratio is the first laser beam L1 in the first wavelength band emitted at the current position in the processing direction and the second laser beam L1 in the second wavelength band emitted at the position one pulse before.
  • Embodiment 2 >> Hereinafter, the same parts as those in the first embodiment are designated by the same reference numerals, and only the differences will be described.
  • the first diffraction grating 11 and the second diffraction grating 12 are arranged so as to be lined up on the same plane.
  • the first diffraction grating 11 and the second diffraction grating 12 advance and retreat on the optical path of the laser beam by the switching mechanism 30.
  • the switching mechanism 30 has an advancing / retreating portion 35.
  • the advancing / retreating portion 35 is composed of, for example, a linear actuator.
  • the advancing / retreating portion 35 advances the first diffraction grating 11 onto the optical path of the laser beam (see FIG. 10).
  • the second diffraction grating 12 is retracted from the optical path of the laser beam.
  • the advancing / retreating portion 35 advances the second diffraction grating 12 onto the optical path of the laser beam (see FIG. 11). At this time, the first diffraction grating 11 is retracted from the optical path of the laser beam.
  • the first diffraction grating 11 or the second diffraction grating 12 can be switched according to the wavelength band of the laser light.
  • Embodiment 3 As shown in FIG. 12, the first diffraction grating 11 and the second diffraction grating 12 are arranged so as to be arranged in the thickness direction. The first diffraction grating 11 and the second diffraction grating 12 advance and retreat on the optical path of the laser beam by the switching mechanism 30.
  • the switching mechanism 30 has an advancing / retreating portion 35.
  • the advancing / retreating portion 35 is composed of, for example, a linear actuator.
  • the advancing / retreating portion 35 advances the first diffraction grating 11 onto the optical path of the laser beam (see FIG. 12).
  • the second diffraction grating 12 is retracted from the optical path of the laser beam.
  • the advancing / retreating portion 35 advances the second diffraction grating 12 onto the optical path of the laser beam (see FIG. 13). At this time, the first diffraction grating 11 is retracted from the optical path of the laser beam.
  • the first diffraction grating 11 or the second diffraction grating 12 can be switched according to the wavelength band of the laser light.
  • the embodiment may have the following configuration.
  • the execution time T2 of the second operation is made longer than the execution time T1 of the first operation, but the present embodiment is not limited to this mode.
  • the execution time T1 of the first operation may be made longer than the execution time T2 of the second operation. In this case, it may be set in the range of 1 ⁇ T1 / T2 ⁇ 10.
  • the first laser beam L1 in the first wavelength band and the second laser beam L2 in the second wavelength band are alternately emitted at a predetermined period, but the present embodiment is limited to this embodiment. It is also possible to emit a laser beam of a different wavelength band instead of the one.
  • the laser oscillator 10 is a third diffraction grating (not shown) that combines a third laser diode (not shown) that emits a third laser beam L3 in the third wavelength band and a plurality of third laser beams L3 in the third wavelength band.
  • the first laser beam L1 in the first wavelength band, the second laser beam L2 in the second wavelength band, and the third laser beam in the third wavelength band are provided.
  • L3 and L3 may be emitted alternately at a predetermined cycle.
  • the third wavelength band may be, for example, 500 to 580 nm.
  • the third laser beam L3 in the third wavelength band is a green laser beam.
  • the object W to be processed can be processed in a beam shape in which the laser beams of the first wavelength band, the second wavelength band, and the third wavelength band are combined (see FIG. 16).
  • the opening area of the key hole 42 of the object W to be processed can be expanded more stably, and the generation of spatter that tends to occur near the opening can be suppressed. Further, by expanding the opening area of the keyhole 42 more stably, the collapse of the keyhole 42 can be suppressed. As a result, spatter generated by the collapse of the keyhole 42 can be suppressed.
  • the execution time T1 for emitting the first laser beam L1, the execution time T2 for emitting the second laser beam L2, and the execution time T3 for emitting the third laser beam L3 have the same length. Although it is set to laser, it may be set to different lengths.
  • the beam diameter of the first laser beam L1 in the first wavelength band is narrowed by focusing on the first laser beam L1 in the first wavelength band, while the beam diameter of the first laser beam L1 in the first wavelength band is narrowed down.
  • the beam wavelength of the second laser beam L2 is widened, but the present invention is not limited to this form.
  • the beam diameter of the second laser beam L2 in the second wavelength band is narrowed, while, for example, the second laser in the second wavelength band. Adjusting the distance between the optical fiber 2 and a condenser lens (not shown) provided in the laser processing head 3 when switching the wavelength of the laser beam from the light L2 to the first laser beam L1 in the first wavelength band. Therefore, the beam diameter of the first laser beam L1 in the first wavelength band may be widened.
  • the first semiconductor laser device 20 and the second semiconductor laser device 25 may be configured by a semiconductor laser bar having a plurality of emitters or a semiconductor stack in which a plurality of semiconductor laser bars are stacked.
  • the first semiconductor laser device 20 and the second semiconductor laser device 25 are provided, but the present invention is not particularly limited to this.
  • the number of semiconductor laser devices can be appropriately changed depending on the output specifications required for the laser processing apparatus 1 and the output specifications of the individual semiconductor laser devices.
  • the present invention is extremely useful and industrial because it has a highly practical effect that the wavelength of the laser beam can be changed according to the processing purpose with a relatively simple configuration. High availability.
  • Input section 10 Laser oscillator 11 First diffraction grating 12 Second diffraction grating 21 First laser diode (first exit section) 26 Second laser diode (second exit) 30 Switching mechanism 31 Support shaft 32 Rotating part 35 Advance / retreat part L1 First laser beam (laser beam in the first wavelength band) L2 2nd laser beam (2nd wavelength band laser beam) L3 3rd laser beam (laser beam in the 3rd wavelength band) W Machining object

Abstract

In the present invention, a control unit 6 alternatingly executes, in a prescribed cycle, a first operation and a second operation. In the first operation, first laser light L1 of a first wavelength range is emitted, and a first diffraction grating 11 is disposed on a light path. In the second operation, second laser light L2 of a second wavelength range is emitted, and a second diffraction grating 12 is disposed on a light path.

Description

レーザ発振器Laser oscillator
　本発明は、レーザ発振器に関するものである。 The present invention relates to a laser oscillator.
　特許文献１には、波長の異なる複数のファイバレーザから出射したレーザ光を、ビーム合成のため波長合成素子としてのＷＤＭカプラーを用いて同一光軸上にビーム合成するようにしたレーザ加工装置が開示されている。 Patent Document 1 discloses a laser processing apparatus in which laser light emitted from a plurality of fiber lasers having different wavelengths is beam-synthesized on the same optical axis by using a WDM coupler as a wavelength-synthesizing element for beam synthesis. Has been done.
特開２００８－４４０００号公報Japanese Unexamined Patent Publication No. 2008-44000
　しかしながら、特許文献１の発明では、波長の異なるレーザ光を出射するために、複数のファイバレーザを設けているから、部品点数が増えてコストがかかるとともに、装置が大型化するという問題がある。また、ビーム合成を行うためにＷＤＭカプラーを用いているから、光軸調整作業が煩雑となるという問題がある。 However, in the invention of Patent Document 1, since a plurality of fiber lasers are provided in order to emit laser light having different wavelengths, there is a problem that the number of parts increases, the cost increases, and the device becomes large. Further, since the WDM coupler is used for beam synthesis, there is a problem that the optical axis adjustment work becomes complicated.
　本発明は、かかる点に鑑みてなされたものであり、その目的は、比較的簡単な構成で、加工目的に応じてレーザ光の波長を変更できるようにすることにある。 The present invention has been made in view of this point, and an object of the present invention is to enable the wavelength of a laser beam to be changed according to a processing purpose with a relatively simple configuration.
　第１の態様は、波長帯の異なるレーザ光を出射可能なレーザ発振器であって、第１波長帯のレーザ光を出射する複数の第１出射部と、第２波長帯のレーザ光を出射する複数の第２出射部と、前記第１波長帯の複数のレーザ光を結合する第１回折格子と、前記第２波長帯の複数のレーザ光を結合する第２回折格子と、前記第１出射部又は前記第２出射部から出射されたレーザ光の波長帯に応じて、該レーザ光の光路上に配置する前記第１回折格子又は前記第２回折格子を切り替える切替機構と、前記第１出射部、前記第２出射部、及び前記切替機構の動作を制御する制御部とを備え、前記制御部は、前記第１波長帯のレーザ光を出射し且つ前記第１回折格子を前記光路上に配置する第１動作と、前記第２波長帯のレーザ光を出射し且つ前記第２回折格子を該光路上に配置する第２動作とを、所定の周期で交互に実行することを特徴とする。 The first aspect is a laser oscillator capable of emitting laser light having different wavelength bands, which emits a plurality of first emitting portions for emitting laser light in the first wavelength band and laser light in the second wavelength band. A first diffraction grating that combines a plurality of second emission units, a plurality of laser beams in the first wavelength band, a second diffraction grating that combines a plurality of laser beams in the second wavelength band, and the first emission. A switching mechanism for switching the first diffraction grating or the second diffraction grating arranged on the optical path of the laser beam according to the wavelength band of the laser beam emitted from the unit or the second emission unit, and the first emission. The control unit includes a unit, a second emission unit, and a control unit that controls the operation of the switching mechanism, and the control unit emits laser light in the first wavelength band and puts the first diffraction grating on the optical path. The first operation of arranging the grating and the second operation of emitting the laser beam of the second wavelength band and arranging the second diffraction grating on the optical path are alternately executed at a predetermined cycle. ..
　第１の態様では、切替機構は、レーザ光の波長帯に応じて、レーザ光の光路上に配置する第１回折格子又は第２回折格子を切り替える。具体的に、第１出射部から第１波長帯のレーザ光を出射する場合、レーザ光の光路上に第１回折格子を配置する。一方、第２出射部から第２波長帯のレーザ光を出射する場合、レーザ光の光路上に第２回折格子を配置する。 In the first aspect, the switching mechanism switches the first diffraction grating or the second diffraction grating arranged on the optical path of the laser light according to the wavelength band of the laser light. Specifically, when the laser beam of the first wavelength band is emitted from the first emission unit, the first diffraction grating is arranged on the optical path of the laser beam. On the other hand, when the laser beam of the second wavelength band is emitted from the second emission unit, the second diffraction grating is arranged on the optical path of the laser beam.
　このように、第１回折格子又は第２回折格子を切り替えることで、レーザ光の波長帯を変更しても、第１回折格子又は第２回折格子によって結合されたレーザ光の光軸を同一にすることができる。そのため、回折格子以降の光学系を共通としたままで、レーザ光の伝送が可能となる。 In this way, by switching the first diffraction grating or the second diffraction grating, even if the wavelength band of the laser light is changed, the optical axis of the laser light coupled by the first diffraction grating or the second diffraction grating becomes the same. can do. Therefore, it is possible to transmit the laser beam while keeping the optical system after the diffraction grating in common.
　これにより、従来のように複数のファイバレーザやＷＤＭカプラーを設ける必要が無く、比較的簡単な構成で、加工目的に応じてレーザ光の波長を変更することができる。 As a result, it is not necessary to provide a plurality of fiber lasers or WDM couplers as in the conventional case, and the wavelength of the laser beam can be changed according to the processing purpose with a relatively simple configuration.
　また、制御部は、第１動作と、第２動作とを、所定の周期で交互に実行する。第１動作では、第１波長帯のレーザ光が出射され且つ第１回折格子が光路上に配置される。第２動作では、第２波長帯のレーザ光が出射され且つ第２回折格子が光路上に配置される。 Further, the control unit alternately executes the first operation and the second operation at a predetermined cycle. In the first operation, the laser beam of the first wavelength band is emitted and the first diffraction grating is arranged on the optical path. In the second operation, the laser beam of the second wavelength band is emitted and the second diffraction grating is arranged on the optical path.
　このように、第１波長帯のレーザ光と、第２波長帯のレーザ光とを、所定の周期で交互に出射することで、第１波長帯及び第２波長帯のレーザ光が合わさったビーム形状で、加工対象物を加工することができる。 In this way, the laser beam in the first wavelength band and the laser beam in the second wavelength band are alternately emitted at a predetermined period, so that the laser beam in the first wavelength band and the laser beam in the second wavelength band are combined. The shape allows processing of the object to be processed.
　例えば、第１波長帯のレーザ光に焦点を合わせた状態で、第１波長帯及び第２波長帯のレーザ光を交互に出射することで、ビーム径が絞られた第１波長帯のレーザ光によって、加工対象物の加工に必要なビーム中心のエネルギーを十分に確保する一方、ビーム径が広がった第２波長帯のレーザ光によって、キーホールの開口面積を広げてスパッタの発生を抑えることができる。また、キーホールの開口面積を広げることで、キーホールの崩壊を抑えることができる。 For example, the laser beam in the first wavelength band has a narrowed beam diameter by alternately emitting the laser beam in the first wavelength band and the laser beam in the second wavelength band while focusing on the laser beam in the first wavelength band. This allows the laser beam in the second wavelength band, which has a wider beam diameter, to widen the opening area of the keyhole and suppress the occurrence of spatter, while ensuring sufficient energy at the center of the beam required for machining the object to be machined. it can. Further, by widening the opening area of the keyhole, the collapse of the keyhole can be suppressed.
　また、第１波長帯のレーザ光よりも加工方向の前方に第２波長帯のレーザ光が出射されるので、加工対象物の予熱を行うことができる。 Further, since the laser beam of the second wavelength band is emitted ahead of the laser beam of the first wavelength band in the processing direction, it is possible to preheat the object to be processed.
　第２の態様は、第１の態様において、前記制御部は、前記第１動作の実行時間と、前記第２動作の実行時間とを変更することを特徴とする。 The second aspect is characterized in that, in the first aspect, the control unit changes the execution time of the first operation and the execution time of the second operation.
　第２の態様では、レーザ加工の目的に応じて、第１動作及び第２動作の実行時間を変更できるようにしている。 In the second aspect, the execution time of the first operation and the second operation can be changed according to the purpose of laser machining.
　第３の態様は、第１又は２の態様において、前記制御部は、前記第２動作の実行時間を、前記第１動作の実行時間よりも長くすることを特徴とする。 A third aspect is characterized in that, in the first or second aspect, the control unit makes the execution time of the second operation longer than the execution time of the first operation.
　第３の態様では、第２動作の実行時間を、第１動作の実行時間よりも長くしている。例えば、加工対象物が、レーザ吸収率が低い高反射材料の銅やアルミニウムで構成されている場合、第２波長帯のレーザ光（青色レーザ光）を出射する時間を、第１波長帯のレーザ光（赤外レーザ光）を出射する時間よりも長くする。 In the third aspect, the execution time of the second operation is made longer than the execution time of the first operation. For example, when the object to be processed is made of copper or aluminum, which is a highly reflective material having a low laser absorption rate, the time for emitting the laser light (blue laser light) in the second wavelength band is set to the laser in the first wavelength band. Make it longer than the time to emit light (infrared laser light).
　これにより、第２波長帯のレーザ光で加工対象物の予熱を十分に行った後、第１波長帯のレーザ光で加工対象物を加工して、スパッタの発生を抑えることができる。 This makes it possible to sufficiently preheat the object to be processed with the laser beam of the second wavelength band and then process the object to be processed with the laser beam of the first wavelength band to suppress the occurrence of spatter.
　第４の態様は、第１又は２の態様において、前記制御部は、前記第１動作の実行時間を、前記第２動作の実行時間よりも長くすることを特徴とする。 A fourth aspect is characterized in that, in the first or second aspect, the control unit makes the execution time of the first operation longer than the execution time of the second operation.
　第４の態様では、第１動作の実行時間を、第２動作の実行時間よりも長くしている。例えば、加工対象物が、レーザ吸収率が高い低反射材料の鉄で構成されている場合、第１波長帯のレーザ光（赤色レーザ光）を出射する時間を、第２波長帯のレーザ光（青色レーザ光）を出射する時間よりも長くする。 In the fourth aspect, the execution time of the first operation is made longer than the execution time of the second operation. For example, when the object to be processed is made of iron, which is a low-reflection material having a high laser absorption rate, the time for emitting the laser beam (red laser beam) in the first wavelength band is set to the laser beam in the second wavelength band (red laser beam). Make it longer than the time to emit the blue laser beam).
　これにより、第１波長帯のレーザ光で加工対象物を加工して、加工対象物の加工品質を高めることができる。 This makes it possible to process the object to be processed with the laser beam of the first wavelength band and improve the processing quality of the object to be processed.
　第５の態様は、第１乃至４の態様のうち何れか１つにおいて、前記切替機構は、前記第１回折格子及び前記第２回折格子が周方向に間隔をあけて支持された支持軸と、該支持軸を回転させることで前記レーザ光の光路上に該第１回折格子又は該第２回折格子を配置させる回転部とを有することを特徴とする。 A fifth aspect is, in any one of the first to fourth aspects, the switching mechanism comprises a support shaft on which the first diffraction grating and the second diffraction grating are supported at intervals in the circumferential direction. It is characterized by having a rotating portion for arranging the first diffraction grating or the second diffraction grating on the optical path of the laser beam by rotating the support shaft.
　第５の態様では、回転部によって支持軸を回転させることで、第１回折格子又は第２回折格子をレーザ光の光路上に配置するようにしている。これにより、レーザ光の波長帯に応じて第１回折格子又は第２回折格子を切り替えることができる。 In the fifth aspect, the first diffraction grating or the second diffraction grating is arranged on the optical path of the laser beam by rotating the support shaft by the rotating portion. Thereby, the first diffraction grating or the second diffraction grating can be switched according to the wavelength band of the laser light.
　第６の態様は、第１乃至４の態様のうち何れか１つにおいて、前記切替機構は、前記第１回折格子又は前記第２回折格子の一方を前記レーザ光の光路上に進出させるとともに、該第１回折格子又は該第２回折格子の他方を該光路上から退避させる進退部を有することを特徴とする。 A sixth aspect is that in any one of the first to fourth aspects, the switching mechanism causes one of the first diffraction grating and the second diffraction grating to advance onto the optical path of the laser beam, and at the same time, It is characterized by having an advancing / retreating portion for retracting the first diffraction grating or the other of the second diffraction grating from the optical path.
　第６の態様では、進退部によって、第１回折格子又は第２回折格子の一方をレーザ光の光路上に進出させ、第１回折格子又は第２回折格子の他方を光路上から退避させるようにしている。これにより、レーザ光の波長帯に応じて第１回折格子又は第２回折格子を切り替えることができる。 In the sixth aspect, one of the first diffraction grating or the second diffraction grating is advanced to the optical path of the laser beam, and the other of the first diffraction grating or the second diffraction grating is retracted from the optical path by the advancing / retreating portion. ing. Thereby, the first diffraction grating or the second diffraction grating can be switched according to the wavelength band of the laser light.
　第７の態様は、第１乃至６の態様のうち何れか１つにおいて、前記レーザ光で加工する加工対象物の材料に関する情報を入力する入力部を備え、前記切替機構は、前記入力部で入力された情報に基づいて、前記第１回折格子又は前記第２回折格子を切り替えることを特徴とする。 A seventh aspect includes, in any one of the first to sixth aspects, an input unit for inputting information about the material of the object to be processed by the laser beam, and the switching mechanism is the input unit. It is characterized in that the first diffraction grating or the second diffraction grating is switched based on the input information.
　第７の態様では、入力部で入力された加工対象物の材料に関する情報に基づいて、第１回折格子又は第２回折格子を切り替えるようにしている。これにより、加工対象物の加工に最適な波長帯のレーザ光に応じて第１回折格子又は第２回折格子を切り替えることができる。 In the seventh aspect, the first diffraction grating or the second diffraction grating is switched based on the information regarding the material of the processing object input in the input unit. As a result, the first diffraction grating or the second diffraction grating can be switched according to the laser beam in the wavelength band most suitable for processing the object to be processed.
　本開示の態様によれば、比較的簡単な構成で、加工目的に応じてレーザ光の波長を変更することができる。 According to the aspect of the present disclosure, the wavelength of the laser beam can be changed according to the processing purpose with a relatively simple configuration.
図１は、本実施形態１に係るレーザ加工装置の構成を示す概略図である。FIG. 1 is a schematic view showing a configuration of a laser processing apparatus according to the first embodiment. 図２は、第１波長帯のレーザ光を出射したときのレーザ発振器の構成を示す図である。FIG. 2 is a diagram showing a configuration of a laser oscillator when a laser beam of the first wavelength band is emitted. 図３は、第２波長帯のレーザ光を出射したときのレーザ発振器の構成を示す図である。FIG. 3 is a diagram showing a configuration of a laser oscillator when a laser beam in the second wavelength band is emitted. 図４は、第１回折格子の構成を示す図である。FIG. 4 is a diagram showing the configuration of the first diffraction grating. 図５は、第２回折格子の構成を示す図である。FIG. 5 is a diagram showing the configuration of the second diffraction grating. 図６は、第１波長帯及び第２波長帯のレーザ光の切り替えタイミングを示す図である。FIG. 6 is a diagram showing switching timing of laser light in the first wavelength band and the second wavelength band. 図７は、第１波長帯及び第２波長帯のレーザ光を重ね合わせたビームプロファイルを示す図である。FIG. 7 is a diagram showing a beam profile in which laser beams of the first wavelength band and the second wavelength band are superimposed. 図８は、第１波長帯のレーザ光Ｌ１を加工対象物に出射した状態を示す側面断面図である。FIG. 8 is a side sectional view showing a state in which the laser beam L1 in the first wavelength band is emitted to the object to be processed. 図９は、第２波長帯のレーザ光Ｌ２を加工対象物に出射した状態を示す側面断面図である。FIG. 9 is a side sectional view showing a state in which the laser beam L2 in the second wavelength band is emitted to the object to be processed. 図１０は、本実施形態２における、第１波長帯のレーザ光を出射したときのレーザ発振器の構成を示す図である。FIG. 10 is a diagram showing a configuration of a laser oscillator when a laser beam of the first wavelength band is emitted in the second embodiment. 図１１は、第２波長帯のレーザ光を出射したときのレーザ発振器の構成を示す図である。FIG. 11 is a diagram showing a configuration of a laser oscillator when a laser beam of a second wavelength band is emitted. 図１２は、本実施形態３における、第１波長帯のレーザ光を出射したときのレーザ発振器の構成を示す図である。FIG. 12 is a diagram showing a configuration of a laser oscillator when a laser beam of the first wavelength band is emitted in the third embodiment. 図１３は、第２波長帯のレーザ光を出射したときのレーザ発振器の構成を示す図である。FIG. 13 is a diagram showing a configuration of a laser oscillator when a laser beam in the second wavelength band is emitted. 図１４は、その他の実施形態における、第１波長帯及び第２波長帯のレーザ光の切り替えタイミングを示す図である。FIG. 14 is a diagram showing switching timing of laser light in the first wavelength band and the second wavelength band in other embodiments. 図１５は、その他の実施形態における、第１波長帯、第２波長帯、及び第３波長帯のレーザ光の切り替えタイミングを示す図である。FIG. 15 is a diagram showing switching timing of laser light in the first wavelength band, the second wavelength band, and the third wavelength band in other embodiments. 図１６は、第１波長帯、第２波長帯、及び第３波長帯のレーザ光を重ね合わせたビームプロファイルを示す図である。FIG. 16 is a diagram showing a beam profile in which laser beams in the first wavelength band, the second wavelength band, and the third wavelength band are superimposed.
　以下、本発明の実施形態を図面に基づいて説明する。なお、以下の好ましい実施形態の説明は、本質的に例示に過ぎず、本発明、その適用物或いはその用途を制限することを意図するものではない。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. It should be noted that the following description of the preferred embodiment is essentially merely an example and is not intended to limit the present invention, its application or its use.
　《実施形態１》
　図１に示すように、レーザ加工装置１は、レーザ発振器１０と、光ファイバ２と、レーザ加工ヘッド３と、アシストガス供給装置４と、マニピュレータ５と、制御部６と、入力部７とを備えている。 << Embodiment 1 >>
As shown in FIG. 1, the laser processing device 1 includes a laser oscillator 10, an optical fiber 2, a laser processing head 3, an assist gas supply device 4, a manipulator 5, a control unit 6, and an input unit 7. I have.
　レーザ発振器１０は、レーザ光を出力し、光ファイバ２に入射する。 The laser oscillator 10 outputs laser light and incidents on the optical fiber 2.
　光ファイバ２は、レーザ発振器１０で出力されたレーザ光をレーザ加工ヘッド３に伝送する。 The optical fiber 2 transmits the laser light output by the laser oscillator 10 to the laser processing head 3.
　レーザ加工ヘッド３は、図示しないコリメータレンズと、図示しない集光レンズとを有する。コリメータレンズは、光ファイバ２の出射端から出射された第１波長帯の第１レーザ光Ｌ１及び第２波長帯の第２レーザ光Ｌ２を平行化する。集光レンズは、コリメータレンズで平行化された第１レーザ光Ｌ１及び第２レーザ光Ｌ２を集光する。 The laser processing head 3 has a collimator lens (not shown) and a condenser lens (not shown). The collimator lens parallelizes the first laser beam L1 in the first wavelength band and the second laser beam L2 in the second wavelength band emitted from the emission end of the optical fiber 2. The condenser lens collects the first laser beam L1 and the second laser beam L2 parallelized by the collimator lens.
　レーザ加工ヘッド３は、光ファイバ２によって伝送され、図示しない集光レンズで集光されたレーザ光を加工対象物Ｗに出射する。なお、加工対象物Ｗの材質としては、軟鋼、ステンレス鋼、アルミニウム合金、銅などが用いられる。 The laser processing head 3 emits the laser light transmitted by the optical fiber 2 and condensed by a condenser lens (not shown) to the processing object W. As the material of the object W to be processed, mild steel, stainless steel, aluminum alloy, copper and the like are used.
　アシストガス供給装置４は、レーザ加工ヘッド３に接続されている。アシストガス供給装置４は、アシストガスをレーザ加工ヘッド３に供給する。 The assist gas supply device 4 is connected to the laser processing head 3. The assist gas supply device 4 supplies the assist gas to the laser processing head 3.
　マニピュレータ５は、レーザ加工ヘッド３の位置及び角度を高い自由度で変更する。これにより、レーザ加工ヘッド３から出射されるレーザ光を、加工対象物Ｗの加工位置に出射することができる。 The manipulator 5 changes the position and angle of the laser processing head 3 with a high degree of freedom. As a result, the laser beam emitted from the laser processing head 3 can be emitted to the processing position of the processing object W.
　制御部６は、レーザ発振器１０、アシストガス供給装置４、及びマニピュレータ５に接続されている。制御部６は、レーザ発振器１０からのレーザ光の出力と、アシストガス供給装置４からのアシストガス供給量と、マニピュレータ５の動作とを制御する。 The control unit 6 is connected to the laser oscillator 10, the assist gas supply device 4, and the manipulator 5. The control unit 6 controls the output of the laser beam from the laser oscillator 10, the amount of assist gas supplied from the assist gas supply device 4, and the operation of the manipulator 5.
　入力部７は、レーザ発振器１０の動作に関する各種の設定値を入力するものである。入力部７には、例えば、レーザ光で加工する加工対象物Ｗの材料に関する情報が入力される。なお、図１に示す例では、レーザ発振器１０に入力部７を接続しているが、制御部６に入力部６を接続してもよい。 The input unit 7 inputs various set values related to the operation of the laser oscillator 10. For example, information about the material of the processing object W to be processed by the laser beam is input to the input unit 7. In the example shown in FIG. 1, the input unit 7 is connected to the laser oscillator 10, but the input unit 6 may be connected to the control unit 6.
　〈レーザ発振器について〉
　図２に示すように、レーザ発振器１０は、第１半導体レーザデバイス２０と、第２半導体レーザデバイス２５と、第１回折格子１１と、第２回折格子１２と、切替機構３０と、出力カプラ１５と、集光レンズ１６とを有する。 <About laser oscillator>
As shown in FIG. 2, the laser oscillator 10 includes a first semiconductor laser device 20, a second semiconductor laser device 25, a first diffraction grating 11, a second diffraction grating 12, a switching mechanism 30, and an output coupler 15. And a condenser lens 16.
　第１半導体レーザデバイス２０、第２半導体レーザデバイス２５、及び切替機構３０の動作は、制御部６によって制御される。 The operations of the first semiconductor laser device 20, the second semiconductor laser device 25, and the switching mechanism 30 are controlled by the control unit 6.
　第１半導体レーザデバイス２０は、複数の第１レーザダイオード２１（第１出射部）を有する。第１レーザダイオード２１は、複数のエミッタ（図示省略）を有する。第１レーザダイオード２１は、複数のエミッタの出力を合成することで、第１レーザ光Ｌ１を出射する。 The first semiconductor laser device 20 has a plurality of first laser diodes 21 (first emission unit). The first laser diode 21 has a plurality of emitters (not shown). The first laser diode 21 emits the first laser beam L1 by synthesizing the outputs of a plurality of emitters.
　複数の第１レーザダイオード２１の出射側には、複数の集光レンズがそれぞれ配置されている（図示省略）。なお、複数の第１レーザダイオード２１から出射される第１レーザ光Ｌ１を、１つの集光レンズで集光するようにしてもよい。 A plurality of condenser lenses are arranged on the exit side of the plurality of first laser diodes 21 (not shown). The first laser beam L1 emitted from the plurality of first laser diodes 21 may be focused by one condenser lens.
　第１レーザダイオード２１は、同じ波長帯の第１レーザ光Ｌ１を出射するレーザダイオードＬＤ１１～ＬＤ１ｎ（ｎは自然数）で構成されている。例えば、第１レーザダイオード２１から出射される第１レーザ光Ｌ１の第１波長帯は、９００ｎｍである。第１レーザ光Ｌ１は、赤外レーザ光である。 The first laser diode 21 is composed of laser diodes LD11 to LD1n (n is a natural number) that emits the first laser beam L1 in the same wavelength band. For example, the first wavelength band of the first laser beam L1 emitted from the first laser diode 21 is 900 nm. The first laser beam L1 is an infrared laser beam.
　第２半導体レーザデバイス２５は、複数の第２レーザダイオード２６（第２出射部）を有する。第２レーザダイオード２６は、複数のエミッタ（図示省略）を有する。第２レーザダイオード２６は、複数のエミッタの出力を合成することで、第２レーザ光Ｌ２を出射する。 The second semiconductor laser device 25 has a plurality of second laser diodes 26 (second emitting portions). The second laser diode 26 has a plurality of emitters (not shown). The second laser diode 26 emits the second laser beam L2 by combining the outputs of the plurality of emitters.
　複数の第２レーザダイオード２６の出射側には、複数の集光レンズがそれぞれ配置されている（図示省略）。なお、複数の第２レーザダイオード２６から出射される第２レーザ光Ｌ２を、１つの集光レンズで集光するようにしてもよい。 A plurality of condenser lenses are arranged on the exit side of the plurality of second laser diodes 26 (not shown). The second laser beam L2 emitted from the plurality of second laser diodes 26 may be focused by one condenser lens.
　第２レーザダイオード２６は、同じ波長帯の第２レーザ光Ｌ２を出射するレーザダイオードＬＤ２１～ＬＤ２ｎ（ｎは自然数）で構成されている。例えば、第２レーザダイオード２６から出射される第２レーザ光Ｌ２の第２波長帯は、４５０ｎｍである。第２レーザ光Ｌ２は、青色レーザ光である。 The second laser diode 26 is composed of laser diodes LD21 to LD2n (n is a natural number) that emits the second laser beam L2 in the same wavelength band. For example, the second wavelength band of the second laser beam L2 emitted from the second laser diode 26 is 450 nm. The second laser beam L2 is a blue laser beam.
　このように、第１レーザダイオード２１から出射される第１レーザ光Ｌ１の第１波長帯と、第２レーザダイオード２６から出射される第２レーザ光Ｌ２の第２波長帯とが異なっている。 As described above, the first wavelength band of the first laser beam L1 emitted from the first laser diode 21 and the second wavelength band of the second laser beam L2 emitted from the second laser diode 26 are different.
　第１回折格子１１は、第１波長帯の複数の第１レーザ光Ｌ１を結合する。第２回折格子１２は、第２波長帯の複数の第２レーザ光Ｌ２を結合する。 The first diffraction grating 11 combines a plurality of first laser beams L1 in the first wavelength band. The second diffraction grating 12 couples a plurality of second laser beams L2 in the second wavelength band.
　切替機構３０は、支持軸３１と、回転部３２とを有する。支持軸３１には、第１回折格子１１及び第２回折格子１２が周方向に間隔をあけて支持されている。支持軸３１は、回転部３２によって回転可能となっている。 The switching mechanism 30 has a support shaft 31 and a rotating portion 32. The first diffraction grating 11 and the second diffraction grating 12 are supported on the support shaft 31 at intervals in the circumferential direction. The support shaft 31 can be rotated by the rotating portion 32.
　回転部３２は、例えば、モータと減速機とで構成されている。回転部３２によって支持軸３１を回転させることで、レーザ光の光路上に配置する第１回折格子１１又は第２回折格子１２を切り替えることができる。 The rotating unit 32 is composed of, for example, a motor and a speed reducer. By rotating the support shaft 31 by the rotating unit 32, the first diffraction grating 11 or the second diffraction grating 12 arranged on the optical path of the laser beam can be switched.
　図２に示す例では、複数の第１レーザダイオード２１から第１波長帯の第１レーザ光Ｌ１が出射している。そのため、回転部３２は、レーザ光の光路上に第１回折格子１１が配置されるように支持軸３１を回転する。 In the example shown in FIG. 2, the first laser beam L1 in the first wavelength band is emitted from the plurality of first laser diodes 21. Therefore, the rotating unit 32 rotates the support shaft 31 so that the first diffraction grating 11 is arranged on the optical path of the laser beam.
　一方、図３に示す例では、複数の第２レーザダイオード２６から第２波長帯の第２レーザ光Ｌ２が出射している。そのため、回転部３２は、レーザ光の光路上に第２回折格子１２が配置されるように支持軸３１を回転する。 On the other hand, in the example shown in FIG. 3, the second laser light L2 in the second wavelength band is emitted from the plurality of second laser diodes 26. Therefore, the rotating unit 32 rotates the support shaft 31 so that the second diffraction grating 12 is arranged on the optical path of the laser beam.
　図２に示すように、第１半導体レーザデバイス２０における第１回折格子１１側の端部は、レーザ出射端である。第１半導体レーザデバイス２０におけるレーザ出射端と反対側の端部は、レーザ光を全反射する全反射端である。 As shown in FIG. 2, the end portion of the first semiconductor laser device 20 on the first diffraction grating 11 side is the laser emission end. The end of the first semiconductor laser device 20 opposite to the laser emitting end is a total reflection end that totally reflects the laser light.
　第１半導体レーザデバイス２０のレーザ出射端から出射された第１レーザ光Ｌ１は、第１回折格子１１を通過し、出力カプラ１５で一部が反射される。 The first laser beam L1 emitted from the laser emission end of the first semiconductor laser device 20 passes through the first diffraction grating 11 and is partially reflected by the output coupler 15.
　出力カプラ１５で反射された第１レーザ光Ｌ１は、第１回折格子１１を通過し、出射された第１半導体レーザデバイス２０に戻る。第１半導体レーザデバイス２０に戻った第１レーザ光Ｌ１は、第１半導体レーザデバイス２０の全反射端で反射される。 The first laser beam L1 reflected by the output coupler 15 passes through the first diffraction grating 11 and returns to the emitted first semiconductor laser device 20. The first laser beam L1 returned to the first semiconductor laser device 20 is reflected at the total reflection end of the first semiconductor laser device 20.
　このように、出力カプラ１５と、第１半導体レーザデバイス２０の全反射端との間で共振が起こり、第１半導体レーザデバイス２０からの第１レーザ光Ｌ１が発振される。これにより、光ファイバ２には、第１レーザ光Ｌ１が入射される。 In this way, resonance occurs between the output coupler 15 and the total reflection end of the first semiconductor laser device 20, and the first laser light L1 from the first semiconductor laser device 20 is oscillated. As a result, the first laser beam L1 is incident on the optical fiber 2.
　以上のように、第１半導体レーザデバイス２０の全反射端と出力カプラ１５との間で、第１回折格子１１を介してレーザ発振器１０が構成される。この構成は、第１半導体レーザデバイス２０の外部の領域を含めてレーザ光が発振されるため、外部共振器と呼ばれる。なお、第２半導体レーザデバイス２５についても同様の構成であるため、説明を省略する。 As described above, the laser oscillator 10 is configured between the total reflection end of the first semiconductor laser device 20 and the output coupler 15 via the first diffraction grating 11. This configuration is called an external resonator because the laser beam is oscillated including the region outside the first semiconductor laser device 20. Since the second semiconductor laser device 25 has the same configuration, the description thereof will be omitted.
　ここで、複数の第１レーザダイオード２１から出射された第１レーザ光Ｌ１は、第１回折格子１１から見て異なる方向から第１回折格子１１に入射されている。第１回折格子１１は、入射角が互いに異なる複数の第１レーザ光Ｌ１を、共通の出射角で出射させる特徴を有している。 Here, the first laser light L1 emitted from the plurality of first laser diodes 21 is incident on the first diffraction grating 11 from different directions when viewed from the first diffraction grating 11. The first diffraction grating 11 has a feature that a plurality of first laser beams L1 having different incident angles are emitted at a common emission angle.
　図４に示すように、第１回折格子１１の開口の間隔ｄ、第１レーザ光Ｌ１の第１回折格子１１への入射角α、散乱角β、回折次数ｍ（ｍ＝０，±１，・・・）、第１レーザ光Ｌ１の波長λ１とすると、光路差は、ｄ×（sinα－sinβ）である。そのため、以下の（１）式が成り立つ。 As shown in FIG. 4, the interval d of the openings of the first diffraction grating 11, the angle of incidence α of the first laser beam L1 on the first diffraction grating 11, the scattering angle β, and the diffraction order m (m = 0, ± 1, ...), Assuming that the wavelength λ1 of the first laser beam L1, the optical path difference is d × (sinα-sinβ). Therefore, the following equation (1) holds.
　ｄ×（sinα－sinβ）＝ｍ×λ１　・・・（１）
　ここで、複数の第１レーザダイオード２１を第１回折格子１１に対して異なる方向に配置することにより、複数の第１レーザダイオード２１から出射される複数の第１レーザ光Ｌ１の出射方向を同一にできる。そして、複数の第１レーザダイオード２１から出射される第１レーザ光Ｌ１の出力を合算することができる。 d × (sinα-sinβ) = m × λ1 ・ ・ ・ (1)
Here, by arranging the plurality of first laser diodes 21 in different directions with respect to the first diffraction grating 11, the emission directions of the plurality of first laser beams L1 emitted from the plurality of first laser diodes 21 are the same. Can be done. Then, the outputs of the first laser beam L1 emitted from the plurality of first laser diodes 21 can be added up.
　すなわち、第１半導体レーザデバイス２０と出力カプラ１５とが、第１回折格子１１を介して外部共振器を構成することで、それぞれの第１レーザ光Ｌ１のビーム品質を悪化させることなく、全ての出力が合算された、より高い出力の第１レーザ光Ｌ１を得ることができる。 That is, the first semiconductor laser device 20 and the output coupler 15 form an external cavity via the first diffraction grating 11, so that the beam quality of each first laser beam L1 is not deteriorated. It is possible to obtain the first laser beam L1 having a higher output, which is the sum of the outputs.
　また、図５に示すように、第２回折格子１２の開口の間隔ｄ／２、第２レーザ光Ｌ２の第１回折格子１１への入射角α、散乱角β、回折次数ｍ（ｍ＝０，±１，・・・）、第２レーザ光Ｌ２の波長λ２とすると、光路差は、（ｄ／２）×（sinα－sinβ）である。そのため、以下の（１）式が成り立つ。 Further, as shown in FIG. 5, the interval d / 2 of the openings of the second diffraction grating 12, the incident angle α of the second laser beam L2 on the first diffraction grating 11, the scattering angle β, and the diffraction order m (m = 0). , ± 1, ...), And assuming that the wavelength λ2 of the second laser beam L2, the optical path difference is (d / 2) × (sinα-sinβ). Therefore, the following equation (1) holds.
　（ｄ／２）×（sinα－sinβ）＝ｍ×λ２　・・・（２）
　そして、第２半導体レーザデバイス２５についても同様に、複数の第２レーザダイオード２６を第２回折格子１２に対して異なる方向に配置することにより、複数の第２レーザダイオード２６から出射される複数の第２レーザ光Ｌ２の出射方向を同一にできる。そして、複数の第２レーザダイオード２６から出射される第２レーザ光Ｌ２の出力を合算することができる。 (D / 2) × (sinα-sinβ) = m × λ2 ・ ・ ・ (2)
Similarly, for the second semiconductor laser device 25, by arranging the plurality of second laser diodes 26 in different directions with respect to the second diffraction grating 12, a plurality of second laser diode 26s emitted from the plurality of second laser diodes 26 are emitted. The emission direction of the second laser beam L2 can be the same. Then, the outputs of the second laser beams L2 emitted from the plurality of second laser diodes 26 can be added up.
　ここで、回転部３２は、入力部７で入力された加工対象物Ｗの材料に関する情報に基づいて、第１回折格子１１又は第２回折格子１２を切り替える。具体的に、加工対象物Ｗが軟鋼、ステンレス、アルミニウム合金等の場合、レーザ光の波長帯が長い（８００～９００ｎｍ）方が、光吸収率が高い。一方、加工対象物Ｗが銅の場合、レーザ光の波長帯が短い（例えば、４００～４５０ｎｍ）方が、光吸収率が高い。 Here, the rotating unit 32 switches between the first diffraction grating 11 and the second diffraction grating 12 based on the information regarding the material of the processing object W input by the input unit 7. Specifically, when the object W to be processed is mild steel, stainless steel, an aluminum alloy, or the like, the longer the wavelength band of the laser beam (800 to 900 nm), the higher the light absorption rate. On the other hand, when the object W to be processed is copper, the shorter the wavelength band of the laser beam (for example, 400 to 450 nm), the higher the light absorption rate.
　そのため、本実施形態では、加工対象物Ｗの材質に応じて第１波長帯又は第２波長帯のレーザ光を選択し、第１波長帯又は第２波長帯に応じた第１回折格子１１又は第２回折格子１２に切り替えるようにしている。 Therefore, in the present embodiment, the laser beam of the first wavelength band or the second wavelength band is selected according to the material of the object W to be processed, and the first diffraction grating 11 or the first diffraction grating 11 or the second wavelength band corresponding to the first wavelength band or the second wavelength band is selected. It is switched to the second diffraction grating 12.
　これにより、加工対象物Ｗに合わせた最適な条件でレーザ加工をすることができる。 As a result, laser machining can be performed under the optimum conditions according to the object W to be machined.
　なお、本実施形態のように、レーザ光を第１波長帯又は第２波長帯に切り替えると、波長差の分だけ集光レンズ１６の焦点距離がずれるおそれがある。そのため、レーザ光の波長切替後は、光ファイバ２から集光レンズ１６の間の距離を微調整したり、集光レンズ１６の色収差補正を行なっても良い。 If the laser beam is switched to the first wavelength band or the second wavelength band as in the present embodiment, the focal length of the condenser lens 16 may shift by the wavelength difference. Therefore, after switching the wavelength of the laser light, the distance between the optical fiber 2 and the condenser lens 16 may be finely adjusted, or the chromatic aberration of the condenser lens 16 may be corrected.
　〈レーザ光の切り替えについて〉
　本実施形態では、図６に示すように、加工対象物Ｗに出射するレーザ光を、所定の周期で切り替えるようにしている。 <About switching laser light>
In the present embodiment, as shown in FIG. 6, the laser beam emitted to the workpiece W is switched at a predetermined cycle.
　具体的に、制御部６は、第１動作と、第２動作とを、所定の周期で交互に実行する。第１動作では、第１波長帯の第１レーザ光Ｌ１が出射され且つ第１回折格子１１が光路上に配置される（図２参照）。第２動作では、第２波長帯の第２レーザ光Ｌ２が出射され且つ第２回折格子１２が光路上に配置される（図３参照）。 Specifically, the control unit 6 alternately executes the first operation and the second operation at a predetermined cycle. In the first operation, the first laser beam L1 in the first wavelength band is emitted and the first diffraction grating 11 is arranged on the optical path (see FIG. 2). In the second operation, the second laser beam L2 in the second wavelength band is emitted and the second diffraction grating 12 is arranged on the optical path (see FIG. 3).
　制御部６は、レーザ加工の目的に応じて、第１動作及び第２動作の実行時間を変更する。図６に示す例では、第２動作の実行時間Ｔ２を、第１動作の実行時間Ｔ１よりも長くしている。例えば、０．１≦Ｔ１／Ｔ２＜１の範囲で設定する。なお、第１動作の実行時間Ｔ１と、第２動作の実行時間Ｔ２とを同じ（Ｔ１／Ｔ２＝１）に設定してもよい。 The control unit 6 changes the execution time of the first operation and the second operation according to the purpose of laser machining. In the example shown in FIG. 6, the execution time T2 of the second operation is made longer than the execution time T1 of the first operation. For example, it is set in the range of 0.1 ≦ T1 / T2 <1. The execution time T1 of the first operation and the execution time T2 of the second operation may be set to be the same (T1 / T2 = 1).
　このように、第１波長帯の第１レーザ光Ｌ１と、第２波長帯の第２レーザ光Ｌ２とを、所定の周期で交互に出射することで、第１波長帯及び第２波長帯のレーザ光が合わさったビーム形状で、加工対象物Ｗを加工することができる（図７参照）。 In this way, the first laser beam L1 in the first wavelength band and the second laser beam L2 in the second wavelength band are alternately emitted at a predetermined cycle to obtain the first wavelength band and the second wavelength band. The object W to be processed can be processed with a beam shape in which laser beams are combined (see FIG. 7).
　図８及び図９に示すように、第１波長帯の第１レーザ光Ｌ１に焦点を合わせた状態で、第１波長帯及び第２波長帯のレーザ光を交互に出射する。具体的に、図８に示すように、ビーム径が絞られた第１波長帯の第１レーザ光Ｌ１を加工対象物Ｗに出射することで、加工対象物Ｗの加工に必要なビーム中心のエネルギーを十分に確保して溶融池４１を形成することができる。 As shown in FIGS. 8 and 9, the laser light of the first wavelength band and the laser light of the second wavelength band are alternately emitted while focusing on the first laser light L1 of the first wavelength band. Specifically, as shown in FIG. 8, by emitting the first laser beam L1 in the first wavelength band in which the beam diameter is narrowed to the processing target object W, the center of the beam required for processing the processing target object W is centered. The molten pool 41 can be formed by securing sufficient energy.
　一方、図９に示すように、ビーム径が広がった第２波長帯の第２レーザ光Ｌ２を加工対象物Ｗに出射することで、キーホール４２の開口面積を広げて、開口付近で発生しやすいスパッタの発生を抑えることができる。また、キーホール４２の開口面積を広げることで、キーホール４２の崩壊を抑えることができる。これにより、キーホール４２の崩壊により発生するスパッタを抑制することができる。 On the other hand, as shown in FIG. 9, by emitting the second laser beam L2 in the second wavelength band having a widened beam diameter to the object W to be processed, the opening area of the keyhole 42 is widened and generated in the vicinity of the opening. It is possible to suppress the occurrence of easy spatter. Further, by widening the opening area of the keyhole 42, the collapse of the keyhole 42 can be suppressed. As a result, spatter generated by the collapse of the keyhole 42 can be suppressed.
　また、図９に示すように、第１波長帯の第１レーザ光Ｌ１よりも加工方向（図示白抜き矢印の方向）の前方に、ビーム径が広がった第２波長帯の第２レーザ光Ｌ２が出射されるので、加工対象物Ｗの予熱を行うことができる。 Further, as shown in FIG. 9, the second laser beam L2 in the second wavelength band in which the beam diameter is widened in front of the first laser beam L1 in the first wavelength band in the processing direction (direction of the white arrow in the figure). Is emitted, so that the object W to be processed can be preheated.
　第１波長帯の第１レーザ光Ｌ１のラップ率は、例えば、６０％～８０％の範囲に設定される。ラップ率は、好ましくは６０％に設定される。ラップ率とは、パルス溶接において、現在位置で出射された第１レーザ光Ｌ１と、１パルス前の位置で出射された第１レーザ光Ｌ１との重なり度合を示す指標である。 The lap ratio of the first laser beam L1 in the first wavelength band is set, for example, in the range of 60% to 80%. The lap ratio is preferably set to 60%. The lap ratio is an index indicating the degree of overlap between the first laser beam L1 emitted at the current position and the first laser beam L1 emitted at the position one pulse before in pulse welding.
　言い換えると、ラップ率とは、パルス溶接において、加工方向における、現在位置で出射された第１レーザ光Ｌ１と、１パルス前の位置で出射された第１レーザ光Ｌ１との、レーザ光のビーム径（スポット径）の重なり度合またはレーザ光のナゲット径（パルス溶接のレーザ光による円状の溶融された溶接部の径（ナゲット径）の重なり度合を示す指標である。 In other words, the lap ratio is a beam of laser light of the first laser beam L1 emitted at the current position in the processing direction and the first laser beam L1 emitted at the position one pulse before in pulse welding. It is an index showing the degree of overlap of the diameter (spot diameter) or the nugget diameter of the laser beam (the degree of overlap of the diameter (nugget diameter) of the circularly melted welded portion by the laser beam of pulse welding).
　第１レーザ光Ｌ１のビーム径をａ、１パルス前の第１レーザ光Ｌ１との加工方向の重なり幅をｂとすると、ラップ率は、ｂ／ａで表される。 Assuming that the beam diameter of the first laser beam L1 is a and the overlap width with the first laser beam L1 one pulse before in the processing direction is b, the lap ratio is represented by b / a.
　ここで、第１波長帯と第２波長帯のレーザ光のラップ率とした場合を説明する。例えば、第１波長帯と第２波長帯のレーザ光のラップ率は、６０％～８０％の範囲に設定される。ラップ率は、好ましくは６０％に設定される。ラップ率とは、パルス溶接において、現在位置で出射された第１波長帯の第１レーザ光Ｌ１と、１パルス前の位置で出射された第２波長帯の第２レーザ光Ｌ２との重なり度合を示す指標である。 Here, the case where the lap ratio of the laser light in the first wavelength band and the second wavelength band is used will be described. For example, the lap ratio of the laser light in the first wavelength band and the second wavelength band is set in the range of 60% to 80%. The lap ratio is preferably set to 60%. The lap ratio is the degree of overlap between the first laser beam L1 in the first wavelength band emitted at the current position and the second laser beam L2 in the second wavelength band emitted at the position one pulse before in pulse welding. It is an index showing.
　言い換えると、ラップ率とは、パルス溶接において、加工方向における、現在位置で出射された第１波長帯の第１レーザ光Ｌ１と、１パルス前の位置で出射された第２波長帯の第２レーザ光Ｌ２との、レーザ光のビーム径（スポット径）の重なり度合またはレーザ光によるナゲット径（パルス溶接のレーザ光による円状の溶融された溶接部の径（ナゲット径）の重なり度合を示す指標である。 In other words, in pulse welding, the lap ratio is the first laser beam L1 in the first wavelength band emitted at the current position in the processing direction and the second laser beam L1 in the second wavelength band emitted at the position one pulse before. Indicates the degree of overlap of the beam diameter (spot diameter) of the laser light with the laser light L2 or the degree of overlap of the nugget diameter (the diameter of the circular molten welded portion (nugget diameter) due to the laser light of pulse welding). It is an index.
　《実施形態２》
　以下、前記実施形態１と同じ部分については同じ符号を付し、相違点についてのみ説明する。 << Embodiment 2 >>
Hereinafter, the same parts as those in the first embodiment are designated by the same reference numerals, and only the differences will be described.
　図１０に示すように、第１回折格子１１と第２回折格子１２は、同一平面上に一列に並ぶように配置されている。第１回折格子１１及び第２回折格子１２は、切替機構３０によって、レーザ光の光路上に進退する。 As shown in FIG. 10, the first diffraction grating 11 and the second diffraction grating 12 are arranged so as to be lined up on the same plane. The first diffraction grating 11 and the second diffraction grating 12 advance and retreat on the optical path of the laser beam by the switching mechanism 30.
　切替機構３０は、進退部３５を有する。進退部３５は、例えば、直動アクチュエータで構成されている。第１レーザダイオード２１から第１波長帯の第１レーザ光Ｌ１が出射された場合に、進退部３５は、第１回折格子１１をレーザ光の光路上に進出させる（図１０参照）。このとき、第２回折格子１２は、レーザ光の光路上から退避している。 The switching mechanism 30 has an advancing / retreating portion 35. The advancing / retreating portion 35 is composed of, for example, a linear actuator. When the first laser beam L1 in the first wavelength band is emitted from the first laser diode 21, the advancing / retreating portion 35 advances the first diffraction grating 11 onto the optical path of the laser beam (see FIG. 10). At this time, the second diffraction grating 12 is retracted from the optical path of the laser beam.
　一方、第２レーザダイオード２６から第２波長帯の第２レーザ光Ｌ２が出射された場合に、進退部３５は、第２回折格子１２をレーザ光の光路上に進出させる（図１１参照）。このとき、第１回折格子１１は、レーザ光の光路上から退避している。 On the other hand, when the second laser beam L2 in the second wavelength band is emitted from the second laser diode 26, the advancing / retreating portion 35 advances the second diffraction grating 12 onto the optical path of the laser beam (see FIG. 11). At this time, the first diffraction grating 11 is retracted from the optical path of the laser beam.
　このような構成とすれば、レーザ光の波長帯に応じて、第１回折格子１１又は第２回折格子１２を切り替えることができる。 With such a configuration, the first diffraction grating 11 or the second diffraction grating 12 can be switched according to the wavelength band of the laser light.
　《実施形態３》
　図１２に示すように、第１回折格子１１と第２回折格子１２は、厚み方向に並ぶように配置されている。第１回折格子１１及び第２回折格子１２は、切替機構３０によって、レーザ光の光路上に進退する。 << Embodiment 3 >>
As shown in FIG. 12, the first diffraction grating 11 and the second diffraction grating 12 are arranged so as to be arranged in the thickness direction. The first diffraction grating 11 and the second diffraction grating 12 advance and retreat on the optical path of the laser beam by the switching mechanism 30.
　切替機構３０は、進退部３５を有する。進退部３５は、例えば、直動アクチュエータで構成されている。第１レーザダイオード２１から第１波長帯の第１レーザ光Ｌ１が出射された場合に、進退部３５は、第１回折格子１１をレーザ光の光路上に進出させる（図１２参照）。このとき、第２回折格子１２は、レーザ光の光路上から退避している。 The switching mechanism 30 has an advancing / retreating portion 35. The advancing / retreating portion 35 is composed of, for example, a linear actuator. When the first laser beam L1 in the first wavelength band is emitted from the first laser diode 21, the advancing / retreating portion 35 advances the first diffraction grating 11 onto the optical path of the laser beam (see FIG. 12). At this time, the second diffraction grating 12 is retracted from the optical path of the laser beam.
　一方、第２レーザダイオード２６から第２波長帯の第２レーザ光Ｌ２が出射された場合に、進退部３５は、第２回折格子１２をレーザ光の光路上に進出させる（図１３参照）。このとき、第１回折格子１１は、レーザ光の光路上から退避している。 On the other hand, when the second laser beam L2 in the second wavelength band is emitted from the second laser diode 26, the advancing / retreating portion 35 advances the second diffraction grating 12 onto the optical path of the laser beam (see FIG. 13). At this time, the first diffraction grating 11 is retracted from the optical path of the laser beam.
　このような構成とすれば、レーザ光の波長帯に応じて、第１回折格子１１又は第２回折格子１２を切り替えることができる。 With such a configuration, the first diffraction grating 11 or the second diffraction grating 12 can be switched according to the wavelength band of the laser light.
　《その他の実施形態》
　前記実施形態については、以下のような構成としてもよい。 << Other Embodiments >>
The embodiment may have the following configuration.
　本実施形態では、第２動作の実行時間Ｔ２を、第１動作の実行時間Ｔ１よりも長くするようにしたが、この形態に限定するものではない。例えば、図１４に示すように、第１動作の実行時間Ｔ１を、第２動作の実行時間Ｔ２よりも長くするようにしてもよい。この場合、１＜Ｔ１／Ｔ２≦１０の範囲で設定すればよい。 In the present embodiment, the execution time T2 of the second operation is made longer than the execution time T1 of the first operation, but the present embodiment is not limited to this mode. For example, as shown in FIG. 14, the execution time T1 of the first operation may be made longer than the execution time T2 of the second operation. In this case, it may be set in the range of 1 <T1 / T2 ≦ 10.
　また、本実施形態では、第１波長帯の第１レーザ光Ｌ１と、第２波長帯の第２レーザ光Ｌ２とを、所定の周期で交互に出射するようにしたが、この形態に限定するものではなく、さらに別の波長帯のレーザ光を出射するようにしてもよい。 Further, in the present embodiment, the first laser beam L1 in the first wavelength band and the second laser beam L2 in the second wavelength band are alternately emitted at a predetermined period, but the present embodiment is limited to this embodiment. It is also possible to emit a laser beam of a different wavelength band instead of the one.
　例えば、レーザ発振器１０を、第３波長帯の第３レーザ光Ｌ３を出射する第３レーザダイオード（図示省略）と、第３波長帯の複数の第３レーザ光Ｌ３を結合する第３回折格子（図示省略）とを備えた構成とし、図１５に示すように、第１波長帯の第１レーザ光Ｌ１と、第２波長帯の第２レーザ光Ｌ２と、第３波長帯の第３レーザ光Ｌ３とを、所定の周期で交互に出射するようにしてもよい。 For example, the laser oscillator 10 is a third diffraction grating (not shown) that combines a third laser diode (not shown) that emits a third laser beam L3 in the third wavelength band and a plurality of third laser beams L3 in the third wavelength band. As shown in FIG. 15, the first laser beam L1 in the first wavelength band, the second laser beam L2 in the second wavelength band, and the third laser beam in the third wavelength band are provided. L3 and L3 may be emitted alternately at a predetermined cycle.
　ここで、第３波長帯は、例えば、５００～５８０ｎｍとすればよい。第３波長帯の第３レーザ光Ｌ３は、緑色レーザ光である。 Here, the third wavelength band may be, for example, 500 to 580 nm. The third laser beam L3 in the third wavelength band is a green laser beam.
　このように、第１波長帯の第１レーザ光Ｌ１と、第２波長帯の第２レーザ光Ｌ２と、第３波長帯の第３レーザ光Ｌ３とを、所定の周期で交互に出射することで、第１波長帯、第２波長帯、第３波長帯のレーザ光が合わさったビーム形状で、加工対象物Ｗを加工することができる（図１６参照）。 In this way, the first laser beam L1 in the first wavelength band, the second laser beam L2 in the second wavelength band, and the third laser beam L3 in the third wavelength band are alternately emitted at a predetermined cycle. Therefore, the object W to be processed can be processed in a beam shape in which the laser beams of the first wavelength band, the second wavelength band, and the third wavelength band are combined (see FIG. 16).
　これにより、加工対象物Ｗのキーホール４２の開口面積をより安定して広げて、開口付近で発生しやすいスパッタの発生を抑えることができる。また、キーホール４２の開口面積をより安定して広げることで、キーホール４２の崩壊を抑えることができる。これにより、キーホール４２の崩壊により発生するスパッタを抑制することができる。 As a result, the opening area of the key hole 42 of the object W to be processed can be expanded more stably, and the generation of spatter that tends to occur near the opening can be suppressed. Further, by expanding the opening area of the keyhole 42 more stably, the collapse of the keyhole 42 can be suppressed. As a result, spatter generated by the collapse of the keyhole 42 can be suppressed.
　なお、図１５に示す例では、第１レーザ光Ｌ１を出射する実行時間Ｔ１と、第２レーザ光Ｌ２を出射する実行時間Ｔ２と、第３レーザ光Ｌ３を出射する実行時間Ｔ３とを同じ長さに設定しているが、それぞれ異なる長さに設定してもよい。 In the example shown in FIG. 15, the execution time T1 for emitting the first laser beam L1, the execution time T2 for emitting the second laser beam L2, and the execution time T3 for emitting the third laser beam L3 have the same length. Although it is set to laser, it may be set to different lengths.
　また、本実施形態では、第１波長帯の第１レーザ光Ｌ１に焦点を合わせた状態とすることで、第１波長帯の第１レーザ光Ｌ１のビーム径を絞る一方、第２波長帯の第２レーザ光Ｌ２のビーム径を広げるようにしたが、この形態に限定するものではない。 Further, in the present embodiment, the beam diameter of the first laser beam L1 in the first wavelength band is narrowed by focusing on the first laser beam L1 in the first wavelength band, while the beam diameter of the first laser beam L1 in the first wavelength band is narrowed down. The beam wavelength of the second laser beam L2 is widened, but the present invention is not limited to this form.
　例えば、第２波長帯の第２レーザ光Ｌ２に焦点を合わせた状態とすることで、第２波長帯の第２レーザ光Ｌ２のビーム径を絞る一方、例えば、第２波長帯の第２レーザ光Ｌ２から第１波長帯の第１レーザ光Ｌ１へのレーザ光の波長切替時に、光ファイバ２と、レーザ加工ヘッド３に設けられた図示しない集光レンズとの間の距離の調整を行うことにより、第１波長帯の第１レーザ光Ｌ１のビーム径を広げるようにしてもよい。 For example, by focusing on the second laser beam L2 in the second wavelength band, the beam diameter of the second laser beam L2 in the second wavelength band is narrowed, while, for example, the second laser in the second wavelength band. Adjusting the distance between the optical fiber 2 and a condenser lens (not shown) provided in the laser processing head 3 when switching the wavelength of the laser beam from the light L2 to the first laser beam L1 in the first wavelength band. Therefore, the beam diameter of the first laser beam L1 in the first wavelength band may be widened.
　また、本実施形態では、第１半導体レーザデバイス２０及び第２半導体レーザデバイス２５を、複数のエミッタを有する半導体レーザバーや、複数の半導体レーザバーを積み重ねた半導体スタックで構成してもよい。 Further, in the present embodiment, the first semiconductor laser device 20 and the second semiconductor laser device 25 may be configured by a semiconductor laser bar having a plurality of emitters or a semiconductor stack in which a plurality of semiconductor laser bars are stacked.
　また、本実施形態では、第１半導体レーザデバイス２０及び第２半導体レーザデバイス２５を設けた構成としたが、特にこれに限定されない。半導体レーザデバイスの個数は、レーザ加工装置１に要求される出力仕様や、個々の半導体レーザデバイスの出力仕様によって適宜変更され得る。 Further, in the present embodiment, the first semiconductor laser device 20 and the second semiconductor laser device 25 are provided, but the present invention is not particularly limited to this. The number of semiconductor laser devices can be appropriately changed depending on the output specifications required for the laser processing apparatus 1 and the output specifications of the individual semiconductor laser devices.
　以上説明したように、本発明は、比較的簡単な構成で、加工目的に応じてレーザ光の波長を変更することができるという実用性の高い効果が得られることから、きわめて有用で産業上の利用可能性は高い。 As described above, the present invention is extremely useful and industrial because it has a highly practical effect that the wavelength of the laser beam can be changed according to the processing purpose with a relatively simple configuration. High availability.
　　７　　入力部
　１０　　レーザ発振器
　１１　　第１回折格子
　１２　　第２回折格子
　２１　　第１レーザダイオード（第１出射部）
　２６　　第２レーザダイオード（第２出射部）
　３０　　切替機構
　３１　　支持軸
　３２　　回転部
　３５　　進退部
　Ｌ１　　第１レーザ光（第１波長帯のレーザ光）
　Ｌ２　　第２レーザ光（第２波長帯のレーザ光）
　Ｌ３　　第３レーザ光（第３波長帯のレーザ光）
　　Ｗ　　加工対象物 7 Input section 10 Laser oscillator 11 First diffraction grating 12 Second diffraction grating 21 First laser diode (first exit section)
26 Second laser diode (second exit)
30 Switching mechanism 31 Support shaft 32 Rotating part 35 Advance / retreat part L1 First laser beam (laser beam in the first wavelength band)
L2 2nd laser beam (2nd wavelength band laser beam)
L3 3rd laser beam (laser beam in the 3rd wavelength band)
W Machining object

Claims (7)

  1. 　波長帯の異なるレーザ光を出射可能なレーザ発振器であって、
    　第１波長帯のレーザ光を出射する複数の第１出射部と、
    　第２波長帯のレーザ光を出射する複数の第２出射部と、
    　前記第１波長帯の複数のレーザ光を結合する第１回折格子と、
    　前記第２波長帯の複数のレーザ光を結合する第２回折格子と、
    　前記第１出射部又は前記第２出射部から出射されたレーザ光の波長帯に応じて、該レーザ光の光路上に配置する前記第１回折格子又は前記第２回折格子を切り替える切替機構と、
    　前記第１出射部、前記第２出射部、及び前記切替機構の動作を制御する制御部とを備え、
    　前記制御部は、前記第１波長帯のレーザ光を出射し且つ前記第１回折格子を前記光路上に配置する第１動作と、前記第２波長帯のレーザ光を出射し且つ前記第２回折格子を該光路上に配置する第２動作とを、所定の周期で交互に実行する
    ことを特徴とするレーザ発振器。     A laser oscillator capable of emitting laser light with different wavelength bands.
    A plurality of first emitting units that emit laser light in the first wavelength band,
    A plurality of second emission units that emit laser light in the second wavelength band,
    A first diffraction grating that combines a plurality of laser beams in the first wavelength band,
    A second diffraction grating that combines a plurality of laser beams in the second wavelength band,
    A switching mechanism for switching the first diffraction grating or the second diffraction grating arranged on the optical path of the laser light according to the wavelength band of the laser light emitted from the first emitting unit or the second emitting unit.
    The first emitting unit, the second emitting unit, and a control unit that controls the operation of the switching mechanism are provided.
    The control unit emits the laser light of the first wavelength band and emits the laser light of the second wavelength band and the second diffraction in the first operation of arranging the first diffraction grating on the optical path. A laser oscillator characterized in that a second operation of arranging a grating on the optical path is alternately executed at a predetermined cycle.
  2. 　請求項１において、
    　前記制御部は、前記第１動作の実行時間と、前記第２動作の実行時間とを変更する
    ことを特徴とするレーザ発振器。     In claim 1,
    The control unit is a laser oscillator that changes the execution time of the first operation and the execution time of the second operation.
  3. 　請求項１又は２において、
    　前記制御部は、前記第２動作の実行時間を、前記第１動作の実行時間よりも長くする
    ことを特徴とするレーザ発振器。     In claim 1 or 2,
    The control unit is a laser oscillator characterized in that the execution time of the second operation is made longer than the execution time of the first operation.
  4. 　請求項１又は２において、
    　前記制御部は、前記第１動作の実行時間を、前記第２動作の実行時間よりも長くする
    ことを特徴とするレーザ発振器。     In claim 1 or 2,
    The control unit is a laser oscillator characterized in that the execution time of the first operation is made longer than the execution time of the second operation.
  5. 　請求項１乃至４のうち何れか１つにおいて、
    　前記切替機構は、前記第１回折格子及び前記第２回折格子が周方向に間隔をあけて支持された支持軸と、該支持軸を回転させることで前記レーザ光の光路上に該第１回折格子又は該第２回折格子を配置させる回転部とを有する
    ことを特徴とするレーザ発振器。     In any one of claims 1 to 4,
    The switching mechanism includes a support shaft on which the first diffraction grating and the second diffraction grating are supported at intervals in the circumferential direction, and the first diffraction on the optical path of the laser beam by rotating the support shaft. A laser oscillator having a grating or a rotating portion on which the second diffraction grating is arranged.
  6. 　請求項１乃至４のうち何れか１つにおいて、
    　前記切替機構は、前記第１回折格子又は前記第２回折格子の一方を前記レーザ光の光路上に進出させるとともに、該第１回折格子又は該第２回折格子の他方を該光路上から退避させる進退部を有する
    ことを特徴とするレーザ発振器。     In any one of claims 1 to 4,
    The switching mechanism causes one of the first diffraction grating or the second diffraction grating to advance into the optical path of the laser beam, and retracts the first diffraction grating or the other of the second diffraction grating from the optical path. A laser oscillator characterized by having an advancing / retreating portion.
  7. 　請求項１乃至６のうち何れか１つにおいて、
    　前記レーザ光で加工する加工対象物の材料に関する情報を入力する入力部を備え、
    　前記切替機構は、前記入力部で入力された情報に基づいて、前記第１回折格子又は前記第２回折格子を切り替える
    ことを特徴とするレーザ発振器。     In any one of claims 1 to 6,
    It is provided with an input unit for inputting information about the material of the object to be processed by the laser beam.
    The switching mechanism is a laser oscillator characterized by switching the first diffraction grating or the second diffraction grating based on the information input by the input unit.
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