WO2021101582A8 - Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the same - Google Patents

Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the same Download PDF

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Publication number
WO2021101582A8
WO2021101582A8 PCT/US2020/025612 US2020025612W WO2021101582A8 WO 2021101582 A8 WO2021101582 A8 WO 2021101582A8 US 2020025612 W US2020025612 W US 2020025612W WO 2021101582 A8 WO2021101582 A8 WO 2021101582A8
Authority
WO
WIPO (PCT)
Prior art keywords
electric field
making
methods
magnetoresistive memory
memory devices
Prior art date
Application number
PCT/US2020/025612
Other languages
French (fr)
Other versions
WO2021101582A1 (en
Inventor
Bhagwati Prasad
Alan Kalitsov
Original Assignee
Western Digital Technologies, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/686,917 external-priority patent/US10964748B1/en
Priority claimed from US16/686,860 external-priority patent/US11069741B2/en
Application filed by Western Digital Technologies, Inc. filed Critical Western Digital Technologies, Inc.
Priority to CN202080007035.1A priority Critical patent/CN113243052A/en
Publication of WO2021101582A1 publication Critical patent/WO2021101582A1/en
Publication of WO2021101582A8 publication Critical patent/WO2021101582A8/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)

Abstract

A magnetoresistive memory device includes a first electrode, a second electrode, and a layer stack containing an electric field-modulated magnetic transition layer and a ferroelectric insulator layer located between the first electrode and the second electrode, The electric field-modulated magnetic transition layer includes a non-metallic magnetic material having a ferromagnetic state and a non-ferromagnetic state with a state transition therebetween that depends on an external electric field.
PCT/US2020/025612 2019-11-18 2020-03-29 Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the same WO2021101582A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202080007035.1A CN113243052A (en) 2019-11-18 2020-03-29 Electric field controllable spin filter tunnel junction magnetoresistive memory device and method of manufacturing the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US16/686,917 2019-11-18
US16/686,860 2019-11-18
US16/686,917 US10964748B1 (en) 2019-11-18 2019-11-18 Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the same
US16/686,860 US11069741B2 (en) 2019-11-18 2019-11-18 Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the same

Publications (2)

Publication Number Publication Date
WO2021101582A1 WO2021101582A1 (en) 2021-05-27
WO2021101582A8 true WO2021101582A8 (en) 2021-07-22

Family

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Family Applications (1)

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PCT/US2020/025612 WO2021101582A1 (en) 2019-11-18 2020-03-29 Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the same

Country Status (2)

Country Link
CN (1) CN113243052A (en)
WO (1) WO2021101582A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117561804A (en) * 2021-10-21 2024-02-13 华为技术有限公司 Ferroelectric device, memory device, and electronic apparatus

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3030333B2 (en) * 1997-03-14 2000-04-10 工業技術院長 Switching device and memory device using current and electric field induced phase transition
JP2000195250A (en) * 1998-12-24 2000-07-14 Toshiba Corp Magnetic memory device
JP4568926B2 (en) * 1999-07-14 2010-10-27 ソニー株式会社 Magnetic functional element and magnetic recording apparatus
AU2001287985A1 (en) * 2000-10-17 2002-04-29 International Business Machines Corporation Magnetic element, memory device and write head
JP2004179219A (en) * 2002-11-25 2004-06-24 Matsushita Electric Ind Co Ltd Magnetic device and magnetic memory using the same
JP4231506B2 (en) * 2002-12-25 2009-03-04 パナソニック株式会社 Magnetic switch element and magnetic memory using the same
DE10332826A1 (en) * 2003-07-18 2005-02-10 Brandt, Martin S., Dr. Manipulation of the magnetic properties of semiconductors and magnetoelectronic devices
JP5157891B2 (en) * 2008-12-26 2013-03-06 富士通株式会社 Magnetic detecting element and magnetic reproducing apparatus
US8860006B2 (en) * 2010-03-26 2014-10-14 The Regents Of The University Of California Spin transistor having multiferroic gate dielectric
US8300454B2 (en) * 2010-09-17 2012-10-30 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
FR2973163B1 (en) * 2011-03-23 2013-10-25 Thales Sa DEVICE COMPRISING DIFFERENT THIN LAYERS AND USE OF SUCH A DEVICE
US9852835B2 (en) * 2014-07-17 2017-12-26 University of Pittsburgh—of the Commonwealth System of Higher Education Oxide interface displaying electronically controllable ferromagnetism
CN105609630A (en) * 2016-02-01 2016-05-25 唐山市众基钢结构有限公司 Ferromagnetic-antiferromagnetic thin film heterojunction structure, fabrication method thereof and magnetic storage device
US10546997B2 (en) * 2016-12-02 2020-01-28 Regents Of The University Of Minnesota Magnetic structures including FePd
CN107293641B (en) * 2017-05-05 2019-12-17 华南师范大学 Electric control magnetic memory based on ferroelectric-ferromagnetic heterojunction and preparation method thereof
US10276783B2 (en) * 2017-06-09 2019-04-30 Sandisk Technologies Llc Gate voltage controlled perpendicular spin orbit torque MRAM memory cell

Also Published As

Publication number Publication date
CN113243052A (en) 2021-08-10
WO2021101582A1 (en) 2021-05-27

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