WO2021098664A1 - Method for controlling movement of majorana zero-energy mode using electric field - Google Patents
Method for controlling movement of majorana zero-energy mode using electric field Download PDFInfo
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- 230000005684 electric field Effects 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 26
- 241000121629 Majorana Species 0.000 title claims abstract description 16
- 230000005291 magnetic effect Effects 0.000 claims abstract description 81
- 239000002887 superconductor Substances 0.000 claims abstract description 28
- 230000004907 flux Effects 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims description 39
- 230000005690 magnetoelectric effect Effects 0.000 claims description 20
- 238000009941 weaving Methods 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 6
- 230000005415 magnetization Effects 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 claims description 4
- 239000000696 magnetic material Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 239000003302 ferromagnetic material Substances 0.000 claims 1
- 238000009954 braiding Methods 0.000 abstract description 2
- 230000010354 integration Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 238000009940 knitting Methods 0.000 description 2
- 238000002465 magnetic force microscopy Methods 0.000 description 2
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- 238000010276 construction Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004574 scanning tunneling microscopy Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- the invention relates to a technology in the field of quantum computing, in particular to a method for controlling Majorana zero-energy mode movement with an electric field to complete topological quantum computing.
- Topological quantum computing uses particles with non-Abelian statistical properties, that is, Majorana fermions or those with the same properties as Majorana fermions that appear in topological superconductor (TSC). ) Majorana zero mode (MZM) at the center of the magnetic flux vortex.
- MZM Majorana zero mode
- STM scanning tunneling microscopy
- MFM magnetic force microscopy
- the magnetic flux vortex of MZM but the technology probe dragging requires mechanical movement, slow speed, and cannot directly control the position of the magnetic flux vortex on the topological superconductor. It can only scan a large area to find a suitable magnetic flux vortex before proceeding. Weaving operation.
- the present invention proposes a method for controlling the movement of the Majorana zero-energy mode with an electric field. It is faster than the current method, can easily control and move Majorana zero-energy mode movement, and can be integrated on a large scale.
- the present invention adopts a magnetoeletric (ME) layer to construct a local magnetic field array controlled by an electric field, confines the local magnetic field array or directly generates a magnetic flux vortex loaded with MZM on the topological superconductor, and further realizes Majora by moving the magnetic field Nano zero energy model movement and weaving operation.
- ME magnetoeletric
- the local magnetic field array is used to define the movement route of the Majorana zero-energy mode, including: a heterostructure composed of a magnetoelectric layer and a topological superconductor layer and an array composed of electrodes, and the control of the connection to the array Circuit.
- the said magnetoelectric layer is made of materials with magnetoelectric effect or equivalent magnetoelectric effect, using but not limited to materials with piezomagnetic effect, such as Cr 2 O 3 , piezoelectric effect with equivalent magnetoelectric effect (piezoelectric , PZE) material and a combination of piezoelectric (piezomagnetic, PZM) material or a combination of ferromagnet (FM) and/or piezoelectric material.
- the said moving magnetic field refers to the realization of the change of the magnetic field of the heterojunction formed by the magnetoelectric layer and the topological superconductor layer connected at the adjacent electrodes by the electric field. Because the magnetic flux vortex of the load MZM generated on the topological superconductor will follow the local If the domain magnetic field moves, moving the magnetic field can move the MZM.
- the local magnetic field array is made by photolithography technology.
- the MZM moving method proposed in the present invention is fast due to the electric field control; the local magnetic field can confine or directly generate the MZM-loaded magnetic flux vortex on the topological superconductor, which can easily control and move the MZM; the magnetoelectric material layer and The array of the corresponding electrodes and the electronic circuit for controlling the electric field can be carved on large-scale samples by photolithography technology, which is easy to integrate on a large scale.
- Figure 1 is a schematic diagram of the movement of the embodiment
- Figure 2 is a schematic diagram of the knitting operation of the embodiment
- the basic unit in the local magnetic field array involved in this embodiment includes: a topological superconductor 1 and a material layer 2 with equivalent magnetoelectric effect connected to it to form a heterojunction, and a material layer Electrodes 3 on both sides.
- the material layer 2 can be made of a magnetoelectric effect material, an equivalent magnetoelectric effect material, a combination of PZM and PZE, or a combination of FM and PZE.
- the heterojunction is formed by evaporating a topological superconductor on the material layer 2 by molecular beam epitaxial (MBE) or magnetron sputtering techniques.
- MBE molecular beam epitaxial
- a layer of magnetic material such as Mn 3 NNi is deposited on it by vapor deposition, and then a topological superconductor or artificial topological superconductor layer is covered; or on a ferromagnet with double magnetization easy axis such as Fe 81 Ga 19 and piezoelectric materials
- An equivalent magnetoelectric effect layer is formed, and a topological superconductor layer is formed on it.
- the realization of electric field controlled movement MZM requires the above-mentioned small block size of the magnetoelectric material layer.
- the diameter of the magnetic flux vortex in the artificial topological superconductor can reach about 40 nanometers, and the small pieces of the magnetoelectric material layer cannot be larger than this value. Generally, the radius can be selected. This size ( ⁇ 20nm) is easily achievable for modern lithography technology. Integrating some small basic unit blocks and control circuits to form a large unit for braiding array, as shown in Figure 2, the size of the array requires at least two magnetic flux vortices loaded with MZM. When constructing a woven cell array or even a larger array, the topological superconductor layer is complete and has not been photoetched.
- the specific implementation method of using an electric field to generate and control the magnetic field is: applying an electric field to the magnetoelectric material, and the magnetoelectric effect causes the local magnetic field to be generated.
- the local magnetic field can be removed by removing the electric field.
- the specific realization method of using the electric field to generate and control the magnetic field is: applying an electric field to the bottom piezoelectric material, the piezoelectric effect produces deformation and conducts to the upper laminated magnetic material layer, pressing The magnetic effect causes a magnetic field.
- the local magnetic field can be removed by removing the electric field.
- the specific implementation method of using the electric field to generate and control the magnetic field is: the specific control conversion mechanism is similar to the PZM/PZE combination, the difference is that for PZM, the reverse electric field will completely reverse the magnetization direction of the material ; For FM, adding a reverse electric field generally only rotates the magnetization direction by 90°, and the ferromagnetic body has remanence.
- the composite layer is suitable for the case where the magnetic field generated by the remanence is small and is not enough to generate the magnetic flux vortex loaded with MZM on the topological superconductor layer.
- the local magnetic field generated by the above-mentioned magnetoelectric effect or equivalent magnetoelectric effect material layer under the control of an electric field is not large enough to generate a magnetic flux vortex loaded with MZM on the topological superconductor layer, it is preferable to further apply a macroscopic magnetic field to Guide the generation of the magnetic flux vortex loaded with MZM; due to the pinning effect, the local magnetic field superimposed on the macroscopic magnetic field can still restrain the magnetic flux vortex loaded with MZM.
- the macroscopic magnetic field can be obtained by, but not limited to, first growing a material with large remanence, such as Fe, CO, etc., under the magnetoelectric material, or using a coil.
- the local magnetic field array includes: a topological superconductor 1, a material layer with equivalent magnetoelectric effect, an electrode 3, and a control circuit 4 arranged sequentially from top to bottom, in which: the topological superconductor 1 and the material layer 2 with equivalent magnetoelectric effect constitute a heterojunction, and the electrode 3 is connected to the material layer 2 and the control circuit 4 respectively.
- photolithography can be used to fabricate larger arrays.
- a similar method can be used to complete the complex movement process of MZM and realize various complex weaving operations required for topological quantum computing.
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Abstract
A method for controlling movement of a Majorana zero-energy mode using an electric field, comprising using a magnetoelectric layer to construct a local magnetic field array controlled by an electric field, constraining an MZM-loaded magnetic flux vortex or directly generating an MZM-loaded magnetic flux vortex on a topological superconductor by means of the local magnetic field array, and further implementing movement and braiding operations of a Majorana zero-energy mode by moving a magnetic field. Compared with existing methods, the speed is high, movement of a Majorana zero-energy mode can be achieved by simple and convenient control and movement, and large-scale integration can be achieved.
Description
本发明涉及的是一种量子计算领域的技术，具体是一种用电场控制马约拉纳零能模移动以完成拓扑量子计算的方法。The invention relates to a technology in the field of quantum computing, in particular to a method for controlling Majorana zero-energy mode movement with an electric field to complete topological quantum computing.
拓扑量子计算使用具有非阿贝尔(non-Abelian)统计性质的粒子，即马约拉纳(Majorana)费米子或者具有和马约拉纳费米子相同性质的、出现在拓扑超导体(topological superconductor，TSC)磁通涡旋中心的马约拉纳零能模(Majorana zero mode，MZM)。当前实验上试图实现编织MZM操作，普遍的思路以及方法是用探针如扫描隧道显微镜(scanning tunneling microscopy，STM)针尖，磁力显微镜(magnetic force microscopy，MFM)针尖等来拖动拓扑超导体上负载有MZM的磁通涡旋，但该技术探针拖动需要机械移动、速度慢、不能直接控制拓扑超导体上磁通涡旋的位置，只能先大范围扫描寻找合适的磁通涡旋，再进行编织操作。Topological quantum computing uses particles with non-Abelian statistical properties, that is, Majorana fermions or those with the same properties as Majorana fermions that appear in topological superconductor (TSC). ) Majorana zero mode (MZM) at the center of the magnetic flux vortex. At present, we are trying to realize the operation of weaving MZM. The common idea and method is to use probes such as scanning tunneling microscopy (STM) tip, magnetic force microscopy (MFM) tip, etc. The magnetic flux vortex of MZM, but the technology probe dragging requires mechanical movement, slow speed, and cannot directly control the position of the magnetic flux vortex on the topological superconductor. It can only scan a large area to find a suitable magnetic flux vortex before proceeding. Weaving operation.
发明内容Summary of the invention
本发明针对现有技术机械移动速度慢、难以定位和控制MZM、一个针尖同时只能实现单个MZM的编织操作的不足，提出一种用电场控制马约拉纳零能模移动的方法，相比于当前方法速度快，能简便控制及移动马约拉纳零能模移动，能够大规模集成。Aiming at the disadvantages of the prior art that the mechanical movement speed is slow, it is difficult to locate and control the MZM, and one needle tip can only realize the knitting operation of a single MZM at the same time, the present invention proposes a method for controlling the movement of the Majorana zero-energy mode with an electric field. It is faster than the current method, can easily control and move Majorana zero-energy mode movement, and can be integrated on a large scale.
本发明是通过以下技术方案实现的：The present invention is realized through the following technical solutions:
本发明采用磁电(magnetoeletric，ME)层构建由电场控制的局域磁场阵列，通过局域磁场阵列束缚或者直接在拓扑超导体上产生负载MZM的磁通涡旋，进一步通过移动磁场实现马约拉纳零能模移动以及编织操作。The present invention adopts a magnetoeletric (ME) layer to construct a local magnetic field array controlled by an electric field, confines the local magnetic field array or directly generates a magnetic flux vortex loaded with MZM on the topological superconductor, and further realizes Majora by moving the magnetic field Nano zero energy model movement and weaving operation.
所述的局域磁场阵列用于定义马约拉纳零能模的移动路线，包括：磁电层与拓扑超导体层构成的异质结(heterostructure)及其电极组成的阵列，与阵列相连的控制电路。The local magnetic field array is used to define the movement route of the Majorana zero-energy mode, including: a heterostructure composed of a magnetoelectric layer and a topological superconductor layer and an array composed of electrodes, and the control of the connection to the array Circuit.
所述的磁电层，为具有磁电效应或等效磁电效应的材料制成，采用但不限于具有压磁效应的材料如Cr
2O
3，具有等效磁电效应的压磁(piezoelectric，PZE)材料和压电(piezomagnetic，PZM)材料的组合体或者是铁磁体(ferromagnet，FM)和/或压电材料的组合体。
The said magnetoelectric layer is made of materials with magnetoelectric effect or equivalent magnetoelectric effect, using but not limited to materials with piezomagnetic effect, such as Cr 2 O 3 , piezoelectric effect with equivalent magnetoelectric effect (piezoelectric , PZE) material and a combination of piezoelectric (piezomagnetic, PZM) material or a combination of ferromagnet (FM) and/or piezoelectric material.
所述的移动磁场是指：通过电场控制相邻电极处连接的磁电层与拓扑超导体层构成的异质结的磁场变化实现，由于拓扑超导体上产生负载MZM的磁通涡旋会随着局域磁场移动，移动磁场就可以移动MZM。The said moving magnetic field refers to the realization of the change of the magnetic field of the heterojunction formed by the magnetoelectric layer and the topological superconductor layer connected at the adjacent electrodes by the electric field. Because the magnetic flux vortex of the load MZM generated on the topological superconductor will follow the local If the domain magnetic field moves, moving the magnetic field can move the MZM.
所述的局域磁场阵列采用光刻技术制成。The local magnetic field array is made by photolithography technology.
技术效果Technical effect
本发明提出的MZM移动的方法，由于用电场控制，速度快；局域磁场可以束缚或者直接在拓扑超导体上产生负载MZM的磁通涡旋，可以简便控制以及移动MZM；磁电材料层与相应电极组成的阵列以及控制电场的电子电路，可以通过光刻技术在大尺寸样品上刻出，容易大规模集成。The MZM moving method proposed in the present invention is fast due to the electric field control; the local magnetic field can confine or directly generate the MZM-loaded magnetic flux vortex on the topological superconductor, which can easily control and move the MZM; the magnetoelectric material layer and The array of the corresponding electrodes and the electronic circuit for controlling the electric field can be carved on large-scale samples by photolithography technology, which is easy to integrate on a large scale.
图1为实施例移动示意图；Figure 1 is a schematic diagram of the movement of the embodiment;
图2为实施例编织操作示意图；Figure 2 is a schematic diagram of the knitting operation of the embodiment;
图中：a为基本单元侧视图；b为实施例编织操作示意图；拓扑超导体1、具有等效磁电效应的材料层2、电极3、控制电路4。In the figure: a is a side view of the basic unit; b is a schematic diagram of the weaving operation of the embodiment; a topological superconductor 1, a material layer with an equivalent magnetoelectric effect, an electrode 3, and a control circuit 4.
如图1所示，为本实施例涉及的局域磁场阵列中的基本单元，包括：拓扑超导体1和与之相连构成异质结的具有等效磁电效应的材料层2以及设置于材料层两侧的电极3。As shown in FIG. 1, the basic unit in the local magnetic field array involved in this embodiment includes: a topological superconductor 1 and a material layer 2 with equivalent magnetoelectric effect connected to it to form a heterojunction, and a material layer Electrodes 3 on both sides.
所述的材料层2可以采用磁电效应材料、等效磁电效应材料、PZM和PZE的组合或FM与PZE的组合。The material layer 2 can be made of a magnetoelectric effect material, an equivalent magnetoelectric effect material, a combination of PZM and PZE, or a combination of FM and PZE.
所述的异质结，通过在材料层2上通过分子束外延(molecular beam epitaxial，MBE)或者磁控溅射等技术蒸镀拓扑超导体形成，优选为：在具有压电效应的材料上如压电陶瓷上，通过蒸镀压磁材料层如Mn
3NNi于其上，然后在覆盖上拓扑超导体或人造拓扑超导体层形成；或在双磁化易轴的铁磁体如Fe
81Ga
19以及压电材料形成等效磁电效应层，再于其上覆盖拓扑超导体层形成。
The heterojunction is formed by evaporating a topological superconductor on the material layer 2 by molecular beam epitaxial (MBE) or magnetron sputtering techniques. On electroceramics, a layer of magnetic material such as Mn 3 NNi is deposited on it by vapor deposition, and then a topological superconductor or artificial topological superconductor layer is covered; or on a ferromagnet with double magnetization easy axis such as Fe 81 Ga 19 and piezoelectric materials An equivalent magnetoelectric effect layer is formed, and a topological superconductor layer is formed on it.
实现电场控制移动MZM对上述的磁电材料层小块尺寸有要求。人造拓扑超导体中磁通涡旋的直径可以到达40纳米左右，磁电材料层小块不能大于这个值，一般可取其半径大小。这个尺寸(～20纳米)对于现代光刻技术是可以轻易实现的。集成一些基本单元小块以及控制电路形成大的方形编织单元(unit for braiding)阵列，如图2中所示，阵列大小要求至少能够容纳两个负载有MZM的磁通涡旋。构建编织单元阵列乃至更大阵列的时候，拓扑超导体层是完整的，并未被光刻。The realization of electric field controlled movement MZM requires the above-mentioned small block size of the magnetoelectric material layer. The diameter of the magnetic flux vortex in the artificial topological superconductor can reach about 40 nanometers, and the small pieces of the magnetoelectric material layer cannot be larger than this value. Generally, the radius can be selected. This size (~20nm) is easily achievable for modern lithography technology. Integrating some small basic unit blocks and control circuits to form a large unit for braiding array, as shown in Figure 2, the size of the array requires at least two magnetic flux vortices loaded with MZM. When constructing a woven cell array or even a larger array, the topological superconductor layer is complete and has not been photoetched.
当采用具有磁电效应材料，如Cr
2O
3来产生局域磁场时，用电场来产生和控制磁场的具体实现方式为：对磁电材料施加电场，磁电效应导致产生局域磁场。撤掉电场即可移除局域磁场。
When a material with magnetoelectric effect, such as Cr 2 O 3, is used to generate a local magnetic field, the specific implementation method of using an electric field to generate and control the magnetic field is: applying an electric field to the magnetoelectric material, and the magnetoelectric effect causes the local magnetic field to be generated. The local magnetic field can be removed by removing the electric field.
当采用PZM/PZE组合体来产生局域磁场时，用电场来产生和控制磁场的具体实现方式为：对底层压电材料施加电场，压电效应产生形变传导至上层压磁材料层，压磁效应导致产生 磁场。撤掉电场即可移除局域磁场。When the PZM/PZE combination is used to generate the local magnetic field, the specific realization method of using the electric field to generate and control the magnetic field is: applying an electric field to the bottom piezoelectric material, the piezoelectric effect produces deformation and conducts to the upper laminated magnetic material layer, pressing The magnetic effect causes a magnetic field. The local magnetic field can be removed by removing the electric field.
当采用FM/PZE组合体时，用电场来产生和控制磁场的具体实现方式为：具体控制转换机制和PZM/PZE组合体类似，区别在于对于PZM，加反向电场会完全翻转材料磁化方向；对于FM加反向电场一般只是将磁化方向转动90°，而且铁磁体有剩磁。该组合体层适用于其剩磁产生的磁场较小，不足以在拓扑超导体层上产生负载有MZM的磁通涡旋的情况。When using the FM/PZE combination, the specific implementation method of using the electric field to generate and control the magnetic field is: the specific control conversion mechanism is similar to the PZM/PZE combination, the difference is that for PZM, the reverse electric field will completely reverse the magnetization direction of the material ; For FM, adding a reverse electric field generally only rotates the magnetization direction by 90°, and the ferromagnetic body has remanence. The composite layer is suitable for the case where the magnetic field generated by the remanence is small and is not enough to generate the magnetic flux vortex loaded with MZM on the topological superconductor layer.
当上述具有磁电效应或者等效磁电效应材料层在电场控制下产生的局域磁场不够大，不足以在拓扑超导体层上产生负载有MZM的磁通涡旋时，优选进一步施加宏观磁场来引导负载有MZM的磁通涡旋的产生；由于钉扎效应，叠加在宏观磁场之上的局域磁场仍可以束缚住负载有MZM的磁通涡旋。When the local magnetic field generated by the above-mentioned magnetoelectric effect or equivalent magnetoelectric effect material layer under the control of an electric field is not large enough to generate a magnetic flux vortex loaded with MZM on the topological superconductor layer, it is preferable to further apply a macroscopic magnetic field to Guide the generation of the magnetic flux vortex loaded with MZM; due to the pinning effect, the local magnetic field superimposed on the macroscopic magnetic field can still restrain the magnetic flux vortex loaded with MZM.
所述的宏观磁场采用但不限于通过先在磁电材料下面生长具有大剩磁的材料如Fe，CO等或使用线圈获得。The macroscopic magnetic field can be obtained by, but not limited to, first growing a material with large remanence, such as Fe, CO, etc., under the magnetoelectric material, or using a coil.
如图2中a所示，所述的局域磁场阵列包括：由上而下依次设置的拓扑超导体1、具有等效磁电效应的材料层2、电极3和控制电路4，其中：拓扑超导体1和具有等效磁电效应的材料层2构成异质结，电极3分别与材料层2和控制电路4相连。As shown in Fig. 2 a, the local magnetic field array includes: a topological superconductor 1, a material layer with equivalent magnetoelectric effect, an electrode 3, and a control circuit 4 arranged sequentially from top to bottom, in which: the topological superconductor 1 and the material layer 2 with equivalent magnetoelectric effect constitute a heterojunction, and the electrode 3 is connected to the material layer 2 and the control circuit 4 respectively.
如图2中b所示，当完成构建以后，通过以下步骤实现电场控制移动MZM并实现简单编织操作：As shown in b in Figure 2, when the construction is completed, the electric field control moves the MZM and the simple weaving operation is realized through the following steps:
①通过相连的电极对单元中心和角落磁电材料层小块施加电场，使得单元中心和角落的拓扑超导体上各产生或束缚一个负载有MZM的磁通涡旋，分别对应于涡旋A和B；① Apply an electric field to the small pieces of the magnetoelectric material layer at the center and corners of the unit through the connected electrodes, so that a magnetic flux vortex loaded with MZM is generated or bound on the topological superconductor at the center and corners of the unit, corresponding to vortex A and B respectively ；
②保持涡旋A不变，逐渐减小B涡旋对应磁电材料层小块的电场，同时增大其临近小块的电场，使局域磁场沿临近方向移动，由于局域磁场可以束缚拓扑超导体上产生负载MZM的磁通涡旋，从而使涡旋B随着局域磁场沿临近方向移动，这样就实现了电场控制马约拉纳零能模移动；②Keep vortex A unchanged, and gradually reduce the electric field of vortex B corresponding to the small pieces of magnetoelectric material layer, while increasing the electric field of its adjacent small pieces, so that the local magnetic field moves in the adjacent direction, because the local magnetic field can constrain the topology The magnetic flux vortex loaded with MZM is generated on the superconductor, so that the vortex B moves in the adjacent direction with the local magnetic field, thus realizing the electric field control Majorana zero-energy mode movement;
③沿着包围涡旋A的闭合路径，如图2箭头指示的路径，重复上述过程直至涡旋B回到出发点，完成一次编织操作。③Along the closed path surrounding vortex A, as shown by the arrow in Figure 2, repeat the above process until vortex B returns to the starting point to complete a weaving operation.
除了简单的编织操作，可以利用光刻技术制造更大阵列，采用类似的方法可以完成MZM复杂的移动过程，实现拓扑量子计算所需要的各种复杂编织操作。In addition to simple weaving operations, photolithography can be used to fabricate larger arrays. A similar method can be used to complete the complex movement process of MZM and realize various complex weaving operations required for topological quantum computing.
上述具体实施可由本领域技术人员在不背离本发明原理和宗旨的前提下以不同的方式对其进行局部调整，本发明的保护范围以权利要求书为准且不由上述具体实施所限，在其范围内的各个实现方案均受本发明之约束。The above-mentioned specific implementations can be locally adjusted in different ways by those skilled in the art without departing from the principle and purpose of the present invention. The protection scope of the present invention is subject to the claims and is not limited by the above-mentioned specific implementations. All implementation schemes within the scope are bound by the present invention.
Claims (9)
- 一种用电场控制马约拉纳零能模移动的方法，其特征在于，采用磁电层构建由电场控制的局域磁场阵列，通过局域磁场阵列束缚或者直接在拓扑超导体上产生负载MZM的磁通涡旋，进一步通过移动磁场实现马约拉纳零能模移动以及编织操作。A method for controlling Majorana zero-energy mode movement by electric field, which is characterized in that a magnetoelectric layer is used to construct a local magnetic field array controlled by an electric field, and the local magnetic field array is bound by the local magnetic field array or a load MZM is directly generated on the topological superconductor The magnetic flux vortex further realizes Majorana zero-energy mode movement and weaving operation by moving the magnetic field.
- 根据权利要求1所述的方法，其特征是，所述的局域磁场阵列用于定义马约拉纳零能模的移动路线，包括：磁电层与拓扑超导体层构成的异质结及其电极组成的阵列，与阵列相连的控制电路。The method according to claim 1, wherein the local magnetic field array is used to define the movement route of the Majorana zero-energy mode, comprising: a heterojunction formed by a magnetoelectric layer and a topological superconductor layer and its An array of electrodes, a control circuit connected to the array.
- 根据权利要求1所述的方法，其特征是，所述的磁电层，为具有磁电效应或等效磁电效应的材料制成。The method according to claim 1, wherein the magnetoelectric layer is made of a material having a magnetoelectric effect or an equivalent magnetoelectric effect.
- 根据权利要求1或3所述的方法，其特征是，所述的磁电层采用具有压磁效应的材料，具有等效磁电效应的压磁材料和压电材料的组合体或者是铁磁体和/或压电材料的组合体。The method according to claim 1 or 3, wherein the magnetoelectric layer is made of a material with a piezomagnetic effect, a combination of a piezomagnetic material with an equivalent magnetoelectric effect and a piezoelectric material, or a ferromagnetic material And/or a combination of piezoelectric materials.
- 根据权利要求1所述的方法，其特征是，所述的移动磁场是指：通过电场控制相邻电极处连接的磁电层与拓扑超导体层构成的异质结的磁场变化实现，由于拓扑超导体上产生负载MZM的磁通涡旋会随着局域磁场移动，移动磁场就可以移动MZM。The method according to claim 1, wherein the moving magnetic field refers to: controlling the magnetic field change of the heterojunction formed by the magnetoelectric layer and the topological superconductor layer connected at adjacent electrodes by an electric field, because the topological superconductor The magnetic flux vortex that generates the load MZM will move with the local magnetic field, and the MZM can be moved by moving the magnetic field.
- 根据权利要求1所述的方法，其特征是，所述的局域磁场阵列采用光刻技术制成。The method according to claim 1, wherein the local magnetic field array is made by photolithography technology.
- 根据权利要求4所述的方法，其特征是，当采用具有磁电效应材料产生局域磁场时，用电场来产生和控制磁场的具体实现方式为：对磁电材料施加电场，磁电效应导致产生局域磁场，撤掉电场即可移除局域磁场；The method according to claim 4, characterized in that, when a material with a magnetoelectric effect is used to generate a local magnetic field, the specific implementation of using an electric field to generate and control the magnetic field is: applying an electric field to the magnetoelectric material, and the magnetoelectric effect It causes a local magnetic field to be generated, and the local magnetic field can be removed by removing the electric field;当采用PZM/PZE组合体来产生局域磁场时，用电场来产生和控制磁场的具体实现方式为：对底层压电材料施加电场，压电效应产生形变传导至上层压磁材料层，压磁效应导致产生磁场，撤掉电场即可移除局域磁场；When the PZM/PZE combination is used to generate the local magnetic field, the specific realization method of using the electric field to generate and control the magnetic field is: applying an electric field to the bottom piezoelectric material, the piezoelectric effect produces deformation and conducts to the upper laminated magnetic material layer, pressing The magnetic effect causes a magnetic field, and the local magnetic field can be removed by removing the electric field;当采用FM/PZE组合体时，用电场来产生和控制磁场的具体实现方式为：具体控制转换机制和PZM/PZE组合体类似，区别在于对于PZM，加反向电场会完全翻转材料磁化方向；对于FM加反向电场一般只是将磁化方向转动90°，而且铁磁体有剩磁，该组合体层适用于其剩磁产生的磁场较小，不足以在拓扑超导体层上产生负载有MZM的磁通涡旋的情况。When using the FM/PZE combination, the specific implementation method of using the electric field to generate and control the magnetic field is: the specific control conversion mechanism is similar to the PZM/PZE combination, the difference is that for PZM, the reverse electric field will completely reverse the magnetization direction of the material ; For FM plus a reverse electric field, generally it only rotates the magnetization direction by 90°, and the ferromagnet has remanence. The composite layer is suitable for the magnetic field generated by the remanence is small, and it is not enough to generate a load with MZM on the topological superconductor layer. The magnetic flux vortex.
- 根据权利要求7所述的方法，其特征是，进一步施加宏观磁场来引导负载有MZM的磁通涡旋的产生；由于钉扎效应，叠加在宏观磁场之上的局域磁场仍可以束缚住负载有MZM的磁通涡旋。The method according to claim 7, wherein the macroscopic magnetic field is further applied to guide the generation of the magnetic flux vortex loaded with MZM; due to the pinning effect, the local magnetic field superimposed on the macroscopic magnetic field can still restrain the load There is the magnetic flux vortex of MZM.
- 一种控制马约拉纳零能模移动的局域磁场阵列，其特征在于，由若干基本单元组成，每个基本单元包括：拓扑超导体和与之相连构成异质结的具有等效磁电效应的材料层以及设置于材料层两侧的电极。A local magnetic field array for controlling the movement of Majorana zero-energy mode, which is characterized in that it is composed of a number of basic units, and each basic unit includes: a topological superconductor and a heterojunction connected to it with an equivalent magnetoelectric effect The material layer and the electrodes arranged on both sides of the material layer.
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