WO2021082219A1 - 像素电极结构 - Google Patents

像素电极结构 Download PDF

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Publication number
WO2021082219A1
WO2021082219A1 PCT/CN2019/126095 CN2019126095W WO2021082219A1 WO 2021082219 A1 WO2021082219 A1 WO 2021082219A1 CN 2019126095 W CN2019126095 W CN 2019126095W WO 2021082219 A1 WO2021082219 A1 WO 2021082219A1
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WIPO (PCT)
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pixel electrode
opening
slit
cut
main
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PCT/CN2019/126095
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English (en)
French (fr)
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曹武
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深圳市华星光电半导体显示技术有限公司
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Priority to US16/625,285 priority Critical patent/US20210356818A1/en
Publication of WO2021082219A1 publication Critical patent/WO2021082219A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

Definitions

  • the present application relates to the technical field of display panels, and in particular to a pixel electrode structure.
  • the transmittance of the liquid crystal display panel is mainly affected by three physical factors, which are the total absorption transmittance of the film layer in the penetrating area, the absolute aperture ratio, and the liquid crystal efficiency.
  • three physical factors which are the total absorption transmittance of the film layer in the penetrating area, the absolute aperture ratio, and the liquid crystal efficiency.
  • the pixel electrode will be affected by different objective conditions and cannot achieve the desired effect.
  • the 8-Domain pixel electrode array in the existing VA-type liquid crystal display surface is in a single pixel electrode 10 Due to the single electric field, the arrangement of the liquid crystal molecules is simple, and it is easy to reach the preset state.
  • the two pixel electrodes 10 adjacent to each other as shown in FIG. 2 and FIG. 6, especially in the two pixel electrodes adjacent to each other.
  • the embodiment of the present application provides a pixel electrode structure to solve the problem that the electric field between two adjacent pixel electrodes in an 8Domain pixel electrode array is complicated, which affects the convergence of liquid crystal dark lines and reduces the transmittance of the display panel.
  • the embodiment of the present application provides a pixel electrode structure, including a main pixel electrode and a sub-pixel electrode;
  • the main pixel electrode includes a main pixel frame, and the main pixel frame includes a first horizontal frame located on a side of the main pixel electrode away from the sub-pixel electrode, and a first horizontal frame located at both ends of the first horizontal frame.
  • the first vertical frame and the second vertical frame extending in the direction of the sub-pixel electrode, a first cut-off opening is provided between the first horizontal frame and the first vertical frame, and the first horizontal frame is connected to the second vertical frame. There is a second cut-off opening between the vertical frames;
  • the sub-pixel electrode includes a sub-pixel frame, and the sub-pixel frame includes a second horizontal frame located on a side of the sub-pixel electrode away from the main pixel electrode, and a second horizontal frame located at both ends of the second horizontal frame.
  • a third vertical frame and a fourth vertical frame extending in the direction of the main pixel electrode, a third cut-off opening is provided between the second horizontal frame and the third vertical frame, and the second horizontal frame is connected to the fourth vertical frame.
  • a fourth cut-off opening is arranged between the vertical frames.
  • the main pixel electrode includes a main electrode pattern arranged in a frame of the main pixel, and the main electrode pattern includes at least a first slit and a second slit, so The first slit communicates with the first cut-off opening and the axis of the first slit is collinear with the axis of the first cut-off opening, and the second slit communicates with the second cut-off opening.
  • the axis of the second slit is collinear with the axis of the second cutting opening.
  • the width of the first cutting opening is equal to the width of the first slit.
  • the width of the second cutting opening is equal to the width of the second slit.
  • the main electrode pattern further includes a main cross main stem, and the first slit extends from the main cross main stem to the first cutting opening, so that the first The slit communicates with the first cut-off opening; the second slit extends from the main cross trunk to the second cut-off opening, so that the second slit communicates with the second cut-off opening.
  • the axis of the first cutting opening is perpendicular to the axis of the second cutting opening.
  • the sub-pixel electrode includes a sub-electrode pattern arranged in the frame of the sub-pixel, and the sub-electrode pattern includes at least a third slit and a fourth slit, so
  • the third slit communicates with the third cut-off opening and the axis of the third slit is collinear with the axis of the third cut-off opening
  • the fourth slit communicates with the fourth cut-off opening and the The axis of the fourth slit is collinear with the axis of the fourth cutting opening.
  • the width of the third cut-off opening is equal to the width of the third slit.
  • the width of the fourth cut-off opening is equal to the width of the fourth slit.
  • the axis of the third cutting opening is perpendicular to the axis of the fourth cutting opening.
  • the secondary electrode pattern further includes a secondary cross backbone, and the third slit extends from the secondary cross backbone to the third cutting opening, so that the third The slit communicates with the third cut-off opening; the fourth slit extends from the secondary cross trunk to the fourth cut-off opening, so that the fourth slit communicates with the fourth cut-off opening.
  • the main pixel electrode and the sub pixel electrode are provided with control components, and the control components are electrically connected to the main pixel electrode and the sub pixel electrode, respectively.
  • the present application changes the structure of the 8Domain main pixel frame and the sub-pixel frame. Specifically, a first cutoff is provided between the first horizontal frame and the first vertical frame of the main pixel frame. A second cutoff is provided between the horizontal frame and the second vertical frame, a third cutoff is provided between the second horizontal frame and the third vertical frame of the sub-pixel frame, and between the second horizontal frame and the There is a fourth cut-off opening between the fourth vertical frame, so that the corners of the main pixel frame and the sub-pixel frame are cut off, which improves the structure of the 8Domain pixel electrode array.
  • the alignment dark lines at the corners of the frame of each sub-primary pixel or the corners of the frame of the sub-pixels increase the efficiency of the liquid crystal, thereby increasing the transmittance of the display panel.
  • FIG. 1 is a schematic diagram of the structure of an existing pixel electrode structure array
  • Figure 2 is a partially enlarged schematic diagram of the structure at A in Figure 1;
  • FIG. 3 is a schematic structural diagram of an array of pixel electrode structures provided by an embodiment of the application.
  • Fig. 4 is a partially enlarged schematic diagram of the structure at B in Fig. 3;
  • FIG. 5 is a schematic structural diagram of a pixel electrode structure provided by an embodiment of the application.
  • FIG. 6 is a schematic diagram of the optical performance of the existing pixel electrode structure array at A.
  • FIG. 7 is a schematic diagram of the optical performance at B of the pixel electrode structure formed in an array array provided by an embodiment of the application.
  • the embodiment of the present application provides a pixel electrode structure 20.
  • an 8Domain pixel electrode structure is taken as an example.
  • the pixel electrode structure 20 includes a main pixel electrode 100 and a sub-pixel electrode. 200;
  • the main pixel electrode 100 includes a main pixel frame 110, and the main pixel frame 110 includes a first horizontal frame 111 located in the main pixel electrode 100 on a side away from the sub-pixel electrode 200, and a first horizontal frame 111 located in the first pixel electrode 100.
  • a first vertical frame 112 and a second vertical frame 113 extending from both ends of the horizontal frame 111 in the direction of the sub-pixel electrode 200, a first cut-off opening is provided between the first horizontal frame 111 and the first vertical frame 112 114.
  • a second cut-off opening 115 is provided between the first horizontal frame 111 and the second vertical frame 113;
  • the first cut-off opening 114, the second cut-off opening 115, the third cut-off opening 214, and the fourth cut-off opening 215 are respectively located in the Each corner position of the pixel electrode structure 20, that is, in an array composed of a plurality of the pixel electrode structures 20, the corners between any two adjacent pixel electrode structures 20 up and down are realized in their respective pixel structures.
  • the main pixel electrode 100 is specifically cut off at the corners, which stabilizes the electric field of the pixel electrode structure 20 at each corner, so that the liquid crystal molecules can fall in a preset direction, so that the pixel electrode structure 20 has dark lines at the corners. Very good convergence.
  • the main pixel electrode 100 includes a main electrode pattern 120 disposed in the main pixel frame 110, and the main electrode pattern 120 includes at least a first slit 121 and a second slit 122,
  • the first slit 121 communicates with the first cut-off opening 114 and the axis of the first slit 121 is collinear with the axis of the first cut-off opening 114.
  • the second slit 122 is in line with the first cut-off opening 114.
  • the second cut-off opening 115 is connected and the axis of the second slit 122 is collinear with the axis of the second cut-off opening 115; in addition, the sub-pixel electrode 200 includes a sub-electrode pattern provided in the sub-pixel frame 210 220.
  • the sub-electrode pattern 220 includes at least a third slit 221 and a fourth slit 222.
  • the third slit 221 is in communication with the third cut-off opening 214 and the axis of the third slit 221 is It is collinear with the axis of the third cut-off opening 214, the fourth slit 222 communicates with the fourth cut-off opening 215, and the axis of the fourth slit 222 is in line with the axis of the fourth cut-off opening 215 line.
  • the present embodiment takes the 8Domain pixel electrode structure 20 as an example.
  • the main electrode pattern 120 further includes a main cross backbone 123, and the first slit 121 and the second slit 122 respectively extend from the main cross main stem 123 to the first cut-off opening 114 and the second cut-off opening 115
  • the secondary electrode pattern 220 further includes a secondary cross main stem 223, and the third slit
  • the slit 221 and the fourth slit 222 respectively extend from the secondary cross trunk 223 to the third cut-off opening 214 and the fourth cut-off opening 215.
  • the main electrode pattern 120 and the secondary electrode pattern 220 also include A number of slit patterns parallel to the first slit 121, the second slit 122, the third slit 221, or the fourth slit 222, so that the main electrode pattern 120 and the secondary electrode pattern 220 are all in the shape of Type structure", specifically, the axis of the first cutting opening 114 is perpendicular to the axis of the second cutting opening 115, and the first slit 121 and the second slit 122 may be 45 degrees and 135 degrees, respectively. Inclined, the axis of the third cutting opening 214 is perpendicular to the axis of the fourth cutting opening 215, and the third slit 221 and the fourth slit 222 may be inclined at 45 degrees and 135 degrees, respectively.
  • the width of the first cutting opening 114 is equal to the width of the first slit 121
  • the width of the second cutting opening 115 is equal to the width of the second slit 122
  • the third cutting The width of the opening 214 is equal to the width of the third slit 221
  • the width of the fourth cutting opening 215 is equal to the width of the fourth slit 222; specifically, the first slit 121, the second slit 121
  • the widths of the slit 122, the third slit 221 and the fourth slit 222 are all equal, so that the first cutting opening 114, the second cutting opening 115, the third cutting opening 214, and the fourth cutting opening 215 are all equal.
  • the improved pattern of the electrode is simple and the structure is simple.
  • the main pixel electrode 100 and the sub-pixel electrode 200 are provided with a control component 300, and the control component 300 is electrically connected to the main pixel electrode 100 and the sub-pixel electrode 200.
  • the specific structure of the control component 300 may be, but is not limited to, a 3T1C drive structure, and will not be repeated here.
  • FIG. 6 and FIG. 7 through the cutting structure at each corner of the main pixel frame 110 and the sub-pixel frame 210 of the present application, it is obvious that the structure has a better dark line convergence effect than the original structure, and improves This improves the liquid crystal efficiency of the pixel electrode structure 20 at the corner of the pixel boundary, and also improves the transmittance of the liquid crystal display panel.
  • a first cut-off port 114 is provided between the first horizontal frame 111 and the first vertical frame 112 of the main pixel frame 110.
  • a second cut-off opening 115 is provided between the first horizontal frame 111 and the second vertical frame 113, a third cut-off opening 214 is provided between the second horizontal frame 211 and the third vertical frame 212 of the sub-pixel frame 210, and
  • a fourth cut-off opening 215 is provided between the second horizontal frame 211 and the fourth vertical frame 213, so that the corners of the main pixel frame 110 and the sub-pixel frame 210 are treated with a disconnected structure, which improves the In the 8Domain pixel electrode array, the alignment dark lines between the upper and lower adjacent 8Domain pixel electrodes at the corners of the sub-primary pixel frame 110 or the corner of the sub-pixel frame 210 improve the efficiency of the liquid crystal, thereby increasing the transmittance of the display panel .

Abstract

一种像素电极结构，包括主像素电极（100）和次像素电极（200），主像素电极（100）中的第一横边框（111）与第一竖边框（112）之间设有第一切断口（114），第一横边框（111）与第二竖边框（113）之间设有第二切断口（115），次像素电极（200）中的第二横边框（211）与第三竖边框（212）之间设有第三切断口（214），第二横边框（211）与第四竖边框（213）之间设有第四切断口（215）。

Description

像素电极结构
本申请要求于2019年10月29日提交中国专利局、申请号为201911036519.4、发明名称为“像素电极结构”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示面板技术领域，尤其涉及一种像素电极结构。
 背景技术
液晶显示面板的穿透率主要受到三个物理因子的影响，分别为穿透区膜层的总吸收透射率、绝对开口率、以及液晶效率。产品技术精进时，如何在不改变膜层吸收和开口区大小的前提下，利用像素电极图案的设计来提高液晶效率成为提升穿透率的重要途径。理论上，像素电极在通电后按照该像素电极的图案产生相应的电场，从而诱导不同区域内的液晶分子倒向不同的方向。
 技术问题
显然，在具体应用中，像素电极会受到不同客观条件的影响而达不到理想的效果，如图1所示，现有VA型液晶显示面中的8Domain像素电极阵列，在单一的像素电极10中由于电场单一，液晶分子排列简单，容易达到预设状态，但在上下相邻的两个像素电极10之间，如图2和图6所示，尤其上下相邻的两个像素电极中的主像素电极与次像素电极接近位置的边角处，由于存在这液晶显示面板中数据走线、DBS电极、主像素电极、次像素电极、以及其它公共电极电场的影响，不利于液晶暗纹的收敛，降低了液晶效率，从而降低了显示面板的穿透率。
 技术解决方案
本申请实施例提供一种像素电极结构，以解决8Domain像素电极阵列中，上下相邻的两个像素电极之间电场复杂，影响液晶暗纹的收敛，降低了显示面板穿透率的问题。
本申请实施例提供了一种像素电极结构，包括主像素电极和次像素电极；
所述主像素电极包括主像素边框，所述主像素边框包括位于所述主像素电极内远离所述次像素电极一侧的第一横边框、及分别位于所述第一横边框两端向所述次像素电极方向延伸的第一竖边框和第二竖边框，所述第一横边框与所述第一竖边框之间设有第一切断口，所述第一横边框与所述第二竖边框之间设有第二切断口；
所述次像素电极包括次像素边框，所述次像素边框包括位于所述次像素电极内远离所述主像素电极一侧的第二横边框、及分别位于所述第二横边框两端向所述主像素电极方向延伸的第三竖边框和第四竖边框，所述第二横边框与所述第三竖边框之间设有第三切断口，所述第二横边框与所述第四竖边框之间设有第四切断口。
在本申请实施例的像素电极结构中，所述主像素电极包括设于所述主像素边框内的主电极图案，所述主电极图案至少包括一个第一狭缝和一个第二狭缝，所述第一狭缝与所述第一切断口连通且所述第一狭缝的轴线与所述第一切断口的轴线共线，所述第二狭缝与所述第二切断口连通且所述第二狭缝的轴线与所述第二切断口的轴线共线。
在本申请实施例的像素电极结构中，所述第一切断口的宽度与所述第一狭缝的宽度相等。
在本申请实施例的像素电极结构中，所述第二切断口的宽度与所述第二狭缝的宽度相等。
在本申请实施例的像素电极结构中，所述主电极图案还包括主十字主干，所述第一狭缝从所述主十字主干处延伸至所述第一切断口，以使所述第一狭缝与所述第一切断口连通；所述第二狭缝从所述主十字主干处延伸至第二切断口，以使所述第二狭缝与所述第二切断口连通。
在本申请实施例的像素电极结构中，所述第一切断口的轴线垂直于所述第二切断口的轴线。
在本申请实施例的像素电极结构中，所述次像素电极包括设于所述次像素边框内的次电极图案，所述次电极图案至少包括一个第三狭缝和一个第四狭缝，所述第三狭缝与所述第三切断口连通且所述第三狭缝的轴线与所述第三切断口的轴线共线，所述第四狭缝与所述第四切断口连通且所述第四狭缝的轴线与所述第四切断口的轴线共线。
在本申请实施例的像素电极结构中，所述第三切断口的宽度与所述第三狭缝的宽度相等。
在本申请实施例的像素电极结构中，所述第四切断口的宽度与所述第四狭缝的宽度相等。
在本申请实施例的像素电极结构中，所述第三切断口的轴线垂直于所述第四切断口的轴线。
在本申请实施例的像素电极结构中，所述次电极图案还包括次十字主干，所述第三狭缝从所述次十字主干处延伸至所述第三切断口，以使所述第三狭缝与所述第三切断口连通；所述第四狭缝从所述次十字主干处延伸至所述第四切断口，以使所述第四狭缝与所述第四切断口连通。
在本申请实施例的像素电极结构中，所述主像素电极与次像素电极设有控制组件，所述控制组件分别与所述主像素电极和所述次像素电极电性连接。
 有益效果
相较于现有技术，本申请通过改变8Domain主像素边框和次像素边框的结构，具体在所述主像素边框的第一横边框与第一竖边框之间设第一切断口，在第一横边框与第二竖边框之间设第二切断口，在所述次像素边框的第二横边框与第三竖边框之间设第三切断口，以及在所述第二横边框与所述第四竖边框之间设第四切断口，从而将主像素边框和次像素边框的各拐角处均做断开的结构处理，改善了在8Domain像素电极阵列中，上下两相邻8Domain像素电极之间在各子主像素边框拐角处或次像素边框拐角处的配向暗纹，提高了液晶效率，从而提高了显示面板的穿透率。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有像素电极结构阵列的结构示意图；
图2为图1中A处的局部放大的结构示意图；
图3为本申请实施例提供的像素电极结构组成阵列的结构示意图；
图4为图3中B处的局部放大的结构示意图；
图5为本申请实施例提供像素电极结构的结构示意图；
图6为现有像素电极结构阵列在A处的光学表现的示意图；及
图7为本申请实施例提供的像素电极结构组成阵列阵列在B处的光学表现的示意图。
 本发明的实施方式
本申请提供像素电极结构，为使本申请的目的、技术方案及效果更加清楚、明确，以下参照附图并举实施例对本申请进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本申请，并不用于限定本申请。
本申请实施例提供了一种像素电极结构20，在一实施例中，以8Domain像素电极结构为例，如图3至图5所示，该像素电极结构20包括主像素电极100和次像素电极200；
所述主像素电极100包括主像素边框110，所述主像素边框110包括位于所述主像素电极100内远离所述次像素电极200一侧的第一横边框111、及分别位于所述第一横边框111两端向所述次像素电极200方向延伸的第一竖边框112和第二竖边框113，所述第一横边框111与所述第一竖边框112之间设有第一切断口114，所述第一横边框111与所述第二竖边框113之间设有第二切断口115；
所述次像素电极200包括次像素边框210，所述次像素边框210包括位于所述次像素电极200内远离所述主像素电极100一侧的第二横边框211、及分别位于所述第二横边框211两端向所述主像素电极100方向延伸的第三竖边框212和第四竖边框213，所述第二横边框211与所述第三竖边框212之间设有第三切断口214，所述第二横边框211与所述第四竖边框213之间设有第四切断口215。
可以理解的是，如图5所示，在一所述像素电极结构20中，所述第一切断口114、第二切断口115、第三切断口214和第四切断口215分别位于所述像素电极结构20各拐角位置，也即使得在一由多个所述像素电极结构20组成的阵列中，任一上下相邻两所述像素电极结构20之间均在各自的像素结构中实现拐角的断开处理，如图4所示，为图3中在上下相邻两所述像素电极结构20中，位于上方所述像素电极结构20的次像素电极200与位于下方所述像素电极结构20的主像素电极100具体在拐角断开处理的结构，稳定了像素电极结构20在各拐角处的电场，使得液晶分子能按照预设方向倒伏，从而使得像素电极结构20在拐角处的暗纹得到很好的收敛。
承上，具体的，所述第一切断口114和第二切断口115分别位于所述主像素电极100远离所述次像素电极200一侧的两拐角处，即在所述第一横边框111分别与所述第一竖边框112和第二竖边框113交界的拐角处做切断处理，同理，第三切断口214和第四切断口215分别位于所述次像素电极200远离所述主像素电极100一侧的两拐角处。通过上述结构，改善了原有像素电极在拐角处由于受到液晶显示面板中数据走线、DBS电极、主像素电极100、次像素电极200、以及其它公共电极电场的影响使得暗纹收敛较差的现象，提高了像素边界拐角处的液晶效率，从而提升了显示面板的穿透率。
在一实施例中，所述主像素电极100包括设于所述主像素边框110内的主电极图案120，所述主电极图案120至少包括一个第一狭缝121和一个第二狭缝122，所述第一狭缝121与所述第一切断口114连通且所述第一狭缝121的轴线与所述第一切断口114的轴线共线，所述第二狭缝122与所述第二切断口115连通且所述第二狭缝122的轴线与所述第二切断口115的轴线共线；此外，所述次像素电极200包括设于所述次像素边框210内的次电极图案220，所述次电极图案220至少包括一个第三狭缝221和一个第四狭缝222，所述第三狭缝221与所述第三切断口214连通且所述第三狭缝221的轴线与所述第三切断口214的轴线共线，所述第四狭缝222与所述第四切断口215连通且所述第四狭缝222的轴线与所述第四切断口215的轴线共线。
可以理解的是，如前所述，本实施例以8Domain像素电极结构20为例，如图3和图4所示，所述主电极图案120还包括主十字主干123，所述第一狭缝121和第二狭缝122由所述主十字主干123处分别延伸至所述第一切断口114和第二切断口115，所述次电极图案220还包括次十字主干223，所述第三狭缝221和第四狭缝222由所述次十字主干223处分别延伸至所述第三切断口214和第四切断口215，显然，所述主电极图案120和所述次电极图案220还包括若干与第一狭缝121、第二狭缝122、第三狭缝221或第四狭缝222平行的狭缝图案， 使得所述主电极图案120和所述次电极图案220均呈“米字型结构”，具体的，所述第一切断口114的轴线垂直于所述第二切断口115的轴线，所述第一狭缝121和第二狭缝122可以是分别呈45度和135度倾斜，所述第三切断口214的轴线垂直于所述第四切断口215的轴线，所述第三狭缝221和第四狭缝222可以是分别呈45度和135度倾斜。
承上，所述第一切断口114的宽度与所述第一狭缝121的宽度相等，所述第二切断口115的宽度与所述第二狭缝122的宽度相等，所述第三切断口214的宽度与所述第三狭缝221的宽度相等，所述第四切断口215的宽度与所述第四狭缝222的宽度相等；具体的，所述第一狭缝121、第二狭缝122、第三狭缝221和第四狭缝222的宽度均相等，使得所述第一切断口114、第二切断口115、第三切断口214和第四切断口215均相等，此种电极改进图案简洁，结构简单，只是在原有的制程中沿原有第一狭缝121、第二狭缝122、第三狭缝221和第四狭缝222的方向延伸至主像素边框110和次像素边框210的拐角处进行分割。
在一实施例中，所述主像素电极100与次像素电极200设有控制组件300，所述控制组件300分别与所述主像素电极100和所述次像素电极200电性连接，显然，所述控制组件300具体的结构可以是但不限于3T1C驱动结构，在此不再赘述。如图6和图7所示，通过本申请的在主像素边框110和次像素边框210的各拐角处的切断结构，显然，该结构相对于原有结构具有更好的暗纹收敛效果，提高了像素电极结构20在像素边界拐角处的液晶效率，也提高了液晶显示面板的穿透率。
综上所述，通过改变8Domain主像素边框110和次像素边框210的结构，具体在所述主像素边框110的第一横边框111与第一竖边框112之间设第一切断口114，在第一横边框111与第二竖边框113之间设第二切断口115，在所述次像素边框210的第二横边框211与第三竖边框212之间设第三切断口214，以及在所述第二横边框211与所述第四竖边框213之间设第四切断口215，从而将主像素边框110和次像素边框210的各拐角处均做断开的结构处理，改善了在8Domain像素电极阵列中，上下两相邻8Domain像素电极之间在各子主像素边框110拐角处或次像素边框210拐角处的配向暗纹，提高了液晶效率，从而提高了显示面板的穿透率。
可以理解的是，对本领域普通技术人员来说，可以根据本申请的技术方案及其发明构思加以等同替换或改变，而所有这些改变或替换都应属于本申请所附的权利要求的保护范围。

Claims (12)

  1. 一种像素电极结构，包括主像素电极和次像素电极；
    所述主像素电极包括主像素边框，所述主像素边框包括位于所述主像素电极内远离所述次像素电极一侧的第一横边框、及分别位于所述第一横边框两端向所述次像素电极方向延伸的第一竖边框和第二竖边框，所述第一横边框与所述第一竖边框之间设有第一切断口，所述第一横边框与所述第二竖边框之间设有第二切断口；
    所述次像素电极包括次像素边框，所述次像素边框包括位于所述次像素电极内远离所述主像素电极一侧的第二横边框、及分别位于所述第二横边框两端向所述主像素电极方向延伸的第三竖边框和第四竖边框，所述第二横边框与所述第三竖边框之间设有第三切断口，所述第二横边框与所述第四竖边框之间设有第四切断口。
  2. 如权利要求1所述的像素电极结构，其中，所述主像素电极包括设于所述主像素边框内的主电极图案，所述主电极图案至少包括一个第一狭缝和一个第二狭缝，所述第一狭缝与所述第一切断口连通且所述第一狭缝的轴线与所述第一切断口的轴线共线，所述第二狭缝与所述第二切断口连通且所述第二狭缝的轴线与所述第二切断口的轴线共线。
  3. 如权利要求2所述的像素电极结构，其中，所述第一切断口的宽度与所述第一狭缝的宽度相等。
  4. 如权利要求2所述的像素电极结构，其中，所述第二切断口的宽度与所述第二狭缝的宽度相等。
  5. 如权利要求2所述的像素电极结构，其中，所述第一切断口的轴线垂直于所述第二切断口的轴线。
  6. 如权利要求2所述的像素电极结构，其中，所述主电极图案还包括主十字主干，所述第一狭缝从所述主十字主干处延伸至所述第一切断口，以使所述第一狭缝与所述第一切断口连通；所述第二狭缝从所述主十字主干处延伸至第二切断口，以使所述第二狭缝与所述第二切断口连通。
  7. 如权利要求1所述的像素电极结构，其中，所述次像素电极包括设于所述次像素边框内的次电极图案，所述次电极图案至少包括一个第三狭缝和一个第四狭缝，所述第三狭缝与所述第三切断口连通且所述第三狭缝的轴线与所述第三切断口的轴线共线，所述第四狭缝与所述第四切断口连通且所述第四狭缝的轴线与所述第四切断口的轴线共线。
  8. 如权利要求7所述的像素电极结构，其中，所述第三切断口的宽度与所述第三狭缝的宽度相等。
  9. 如权利要求7所述的像素电极结构，其中，所述第四切断口的宽度与所述第四狭缝的宽度相等。
  10. 如权利要求7所述的像素电极结构，其中，所述第三切断口的轴线垂直于所述第四切断口的轴线。
  11. 如权利要求7所述的像素电极结构，其中，所述次电极图案还包括次十字主干，所述第三狭缝从所述次十字主干处延伸至所述第三切断口，以使所述第三狭缝与所述第三切断口连通；所述第四狭缝从所述次十字主干处延伸至所述第四切断口，以使所述第四狭缝与所述第四切断口连通。
  12. 如权利要求1所述的像素电极结构，其中，所述主像素电极与次像素电极设有控制组件，所述控制组件分别与所述主像素电极和所述次像素电极电性连接。
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