WO2021080327A1 - Dispositif de transfert sélectif par laser et procédé de transfert - Google Patents

Dispositif de transfert sélectif par laser et procédé de transfert Download PDF

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WO2021080327A1
WO2021080327A1 PCT/KR2020/014432 KR2020014432W WO2021080327A1 WO 2021080327 A1 WO2021080327 A1 WO 2021080327A1 KR 2020014432 W KR2020014432 W KR 2020014432W WO 2021080327 A1 WO2021080327 A1 WO 2021080327A1
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Prior art keywords
transfer
laser
substrate
generating
switch
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PCT/KR2020/014432
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English (en)
Korean (ko)
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김승만
한성흠
이재학
송준엽
박아영
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한국기계연구원
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Priority claimed from KR1020190130986A external-priority patent/KR102302140B1/ko
Priority claimed from KR1020190130985A external-priority patent/KR102329818B1/ko
Application filed by 한국기계연구원 filed Critical 한국기계연구원
Publication of WO2021080327A1 publication Critical patent/WO2021080327A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20—Bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range

Definitions

  • the present invention relates to a laser transfer device and a transfer method, and more particularly, to a mass transfer device using a laser multi-beam and a mass transfer method using the same.
  • Micro LEDs are generally manufactured with a chip size of 10 to 100 ⁇ m, and can be applied to all optical applications requiring low power consumption, miniaturization, and weight reduction. If the LED chip is made as small as several tens of microns in this way, it is possible to overcome the disadvantages of breaking when bent due to the nature of inorganic materials.Flexible display, smart fiber combined with fiber and LED, human body attachment and implantable medical device, bio It can be widely used in contact lenses, HMD (Head Mounted Display) and wireless communication fields.
  • HMD Head Mounted Display
  • the high-speed laser transfer process is a technology that enables high-speed transfer of thin-film chips of 10 ⁇ m or less with high alignment without damage, and high-speed transfer is possible based on high-speed pulsed laser and high-speed beam control.
  • the sacrificial layer can be vaporized by laser ablation and the chip can be transferred with the resulting vapor pressure, but it is difficult to secure the transfer alignment due to the difficulty in controlling the intensity and shape of the vapor pressure, and there is also a risk of damage to the chip. exist.
  • the adhesion of the adhesive layer is reduced by laser heat, and the chip can be transferred by the reduction of the adhesive force and the gravity of the chip, but there is a disadvantage in that the probability of transfer failure is high because it is sensitive to the adhesive layer and laser conditions.
  • thermomechanical transfer mechanism when a blister generated by absorbing laser light in the polymer-based absorption layer of DRL (Dynamic Release Layer) consisting of two layers of an absorption layer and an adhesive layer pushes the chip, the chip attached to the adhesive layer It is transferred to the substrate by the reduction of the bonding area and gravity. This is a high-speed process and can be non-damaged because laser is not directly transmitted to the chip, and it is delivered to the substrate for precise positioning.
  • DRL Dynamic Release Layer
  • One aspect of the present invention is to provide an active multi-beam generation-based selective laser transfer device capable of transferring a large area at high speed by generating a selective multi-beam and applying it to the transfer process, and selectively controlling the opening and closing of each beam. do.
  • Another aspect of the present invention is that a large area can be transferred at high speed by generating a selective multi-beam, and by selectively controlling the opening and closing of each beam, a large amount of good chips can be transferred and a large amount of defective chips can be selectively removed. It is intended to provide a selective laser transfer method based on active multi-beam generation.
  • Another aspect of the present invention is that a large area can be transferred at high speed by generating a multi-beam and applying it to the transfer process, and a multi-beam generation and switch capable of selectively controlling the opening and closing of each beam using a high-speed switch. It is intended to provide a selective laser transfer device used.
  • Another aspect of the present invention is that a large area can be transferred at high speed by generating multi-beams, and by selectively controlling the opening and closing of each beam using a high-speed switch, good chips are transferred in large quantities and defective chips are selectively transferred. It is intended to provide a method of generating multi-beams that can be removed in large quantities and selective laser transfer using a switch.
  • An active multi-beam generation-based laser transfer device includes a laser oscillator that generates a laser beam, an active multi-beam that divides the laser beam into multi-beams, and selectively opens and closes each individual element of the multi-beam.
  • a beam optical system, a stage for transferring a transfer substrate and a target substrate in a biaxial direction, and a position of a transfer target point are set, and the position signal is transmitted to the active multi-beam optical system and the stage, And a controller for controlling the driving and opening and closing of the multi-beam.
  • the active multi-beam generation-based laser transfer device may further include a lens that focuses the multi-beams transmitted from the active multi-beam optical system for each individual element.
  • the active multi-beam generation-based laser transfer apparatus may further include a laser scanner that reflects the multi-beams transmitted from the active multi-beam optical system to change the pitch and path of each individual element beam.
  • the active multi-beam optical system may include a spatial light modulator (SLM) or a digital micro-mirror device (DMD).
  • SLM spatial light modulator
  • DMD digital micro-mirror device
  • An active multi-beam generation-based laser transfer method is a laser transfer method for transferring a semiconductor device from a transfer substrate to a target substrate, and generates a multi-beam by transmitting a single laser beam to an active multi-beam optical system. Step of inspecting a semiconductor element of a transfer substrate or a target substrate to set the position of the transfer target point, and transmits the set position signal of the transfer target point to the active multi-beam optical system to selectively open and close individual element beams And generating a beam bundle shape, and irradiating the generated bundle shape laser beam onto the transfer substrate.
  • the active multi-beam generation-based laser transfer method may further include moving a semiconductor device on an EPI wafer to the transfer substrate by a laser lift-off (LLO) process.
  • LLO laser lift-off
  • the active multi-beam optical system may include a spatial light modulator (SLM) or a digital micro-mirror device (DMD).
  • SLM spatial light modulator
  • DMD digital micro-mirror device
  • the step of setting the location of the transfer target point may include inspecting the semiconductor device transferred to the transfer substrate and recognizing the location of the defective chip.
  • the transfer region of the transfer substrate is partitioned based on an NxN beam (where N is a natural number), and a transferable laser beam bundle shape of a good chip is formed for each of the divided transfer regions. It may include the step of generating.
  • the irradiating the laser beam may include aligning the target substrate and the transfer substrate, and forming the multi-beam in the active multi-beam optical system in a shape of a laser beam bundle stored for each transfer area to form a transfer area of the transfer substrate. It may include the step of investigating.
  • the irradiating the laser beam may include reflecting the multi-beam transmitted from the active multi-beam optical system using a laser scanner, and moving and irradiating while changing the pitch and path of each individual element beam.
  • the irradiating the laser beam may include irradiating in a form in which a pitch of each individual element beam of the multi-beam is separated by an integer multiple of the interval of the semiconductor element using the laser scanner.
  • the irradiating the laser beam may include irradiating in a form in which the pitch of each individual element beam of the multi-beam is spaced apart by the width of the transfer area using the laser scanner.
  • the generating of the laser beam bundle shape may include opening and closing a pitch of each individual element beam of the multi-beam in the active multi-beam optical system in a form spaced apart by an integer multiple of the interval between the semiconductor elements.
  • the step of setting the location of the transfer target point may include inspecting the semiconductor device transferred to the target substrate to recognize the location of the defective chip.
  • the transfer region of the target substrate is partitioned based on an NxN beam (where N is a natural number), and a laser beam bundle shape capable of removing defective chips is formed for each of the divided transfer regions. It may include the step of generating.
  • the irradiating the laser beam may include forming the laser multi-beam in the active multi-beam optical system in the shape of a bundle of laser beams stored for each of the transfer regions and irradiating the laser multi-beam onto the transfer region of the target substrate.
  • the step of setting the position of the transfer target point may include inspecting the target substrate to which the semiconductor device has been transferred, and recognizing the untransferred position of the chip.
  • the step of generating the laser beam bundle shape may include dividing a fill-in region of the target substrate based on an NxN beam (where N is a natural number), and the arrangement of the remaining LED chips of the transfer substrate and the And generating a transferable laser beam bundle shape of a good chip for each of the divided fill-in regions by combining the chip untransferred positions of the target substrate.
  • the irradiating the laser beam may include aligning the target substrate and the transfer substrate, and forming the laser multi-beam in the active multi-beam optical system in a shape of a laser beam bundle stored for each transfer area to transfer the transfer substrate. It may include the step of irradiating the area.
  • a laser transfer device using a multi-beam generation and a switch includes a laser oscillator for generating a laser beam, a multi-beam generating optical system for dividing the laser beam into multi-beams, and individual element beams of the multi-beams.
  • An optical switch that selectively opens and closes, a stage for transferring a transfer substrate and a target substrate in a biaxial direction, and a position of a transfer target point are set, and the position signal is transmitted to the optical switch and the stage, according to the position signal.
  • a controller for controlling the driving of the stage and opening and closing of each individual element beam of the multi-beam.
  • the laser transfer device may further include a laser scanner for changing the pitch and path of each individual element beam by reflecting the multi-beams transmitted from the optical switch.
  • the multi-beam generating optical system may include a diffraction optical element (DOE), and the optical switch may include a microelectromechanical (MEMS) switch.
  • DOE diffraction optical element
  • MEMS microelectromechanical
  • the multi-beam generating optical system includes an optical coupler, and the optical switch may include an AOM (Acousto-optic Modulator) switch or an optical fiber type MEMS (Microelectromechanical) switch.
  • AOM Acoustic-optic Modulator
  • MEMS Microelectromechanical
  • a laser transfer method using a multi-beam generation and a switch is a laser transfer method for transferring a semiconductor device from a transfer substrate to a target substrate, and transmits a single laser beam to a multi-beam generating optical system to obtain a multi-beam.
  • the multi-beam generating optical system may include a diffraction optical element (DOE), and the optical switch may include a microelectromechanical (MEMS) switch.
  • DOE diffraction optical element
  • MEMS microelectromechanical
  • the multi-beam generating optical system may include an optical coupler, and the optical switch may include an AOM (Acousto-optic Modulator) switch or an optical fiber type MEMS (Microelectromechanical) switch.
  • AOM Acoustic-optic Modulator
  • MEMS Microelectromechanical
  • the step of setting the location of the transfer target point may include inspecting the semiconductor device transferred to the transfer substrate and recognizing the location of the defective chip.
  • the transfer region of the transfer substrate is partitioned based on an NxN beam (where N is a natural number), and a transferable laser beam bundle shape of a good chip is formed for each of the divided transfer regions. It may include the step of generating.
  • the irradiating the laser beam may include reflecting the multi-beam transmitted from the multi-beam generating optical system and the optical switch using a laser scanner, and moving and irradiating while changing the pitch and path of each individual element beam. .
  • the irradiating the laser beam may include irradiating in a form in which a pitch of each individual element beam of the multi-beam is separated by an integer multiple of the interval of the semiconductor element using the laser scanner.
  • the irradiating the laser beam may include irradiating in a form in which the pitch of each individual element beam of the multi-beam is spaced apart by the width of the transfer area using the laser scanner.
  • the generating of the laser beam bundle shape may include opening and closing a pitch of each individual element beam of the multi-beam in a form spaced apart by an integer multiple of the interval between the semiconductor elements by the optical switch.
  • the step of setting the location of the transfer target point may include inspecting the semiconductor device transferred to the target substrate to recognize the location of the defective chip.
  • the transfer region of the target substrate is partitioned based on an NxN beam (where N is a natural number), and a laser beam bundle shape capable of removing defective chips is formed for each of the divided transfer regions. It may include the step of generating.
  • the irradiating the laser beam may include selecting individual element beams of the laser multi-beams in the optical switch in the shape of a bundle of laser beams stored for each of the transfer areas and irradiating them to the transfer area of the target substrate. have.
  • the step of setting the position of the transfer target point may include inspecting the target substrate to which the semiconductor device has been transferred, and recognizing the untransferred position of the chip.
  • the generating of the laser beam bundle shape may include dividing a fill-in region of the target substrate based on an NxN beam (where N is a natural number), and an arrangement of the remaining semiconductor elements of the transfer substrate and the And generating a transferable laser beam bundle shape of a good chip for each of the divided fill-in regions by combining the chip untransferred positions of the target substrate.
  • the irradiating the laser beam may include aligning the target substrate and the transfer substrate, and selecting individual element beams of the laser multi-beam in the optical switch in a shape of a laser beam bundle stored for each transfer area, and the transfer substrate It may include the step of irradiating the transfer area of.
  • the selective laser transfer device based on active multi-beam generation since it is possible to selectively control the opening and closing of each beam while generating selective multi-beams and applying them to the transfer process, a large area can be transferred at high speed. I can.
  • the selective laser transfer method based on active multi-beam generation since the selective multi-beam is generated and transferred to a large area at high speed, the opening and closing of each beam is selectively controlled. There is an effect of transferring and removing defective chips in large quantities selectively.
  • a large area can be transferred at high speed while applying a multi-beam to a transfer process of an LED chip by generating a multi-beam.
  • the opening and closing of each individual element beam of the multi-beam can be selectively controlled with a high-speed switch, it is possible to selectively transfer a good LED chip by generating a multi-beam bundle having a desired shape.
  • FIGS. 1A and 1B are conceptual diagrams illustrating a selective parallel laser transfer device based on active multi-beam generation according to an embodiment of the present invention.
  • FIGS. 2A to 2C are process diagrams illustrating a selective parallel mass transfer process among a laser transfer method based on active multi-beam generation according to an embodiment of the present invention.
  • FIG 3 is a plan view illustrating a target substrate and a transfer substrate after a selective parallel mass transfer process is completed in an active multi-beam generation-based laser transfer method according to an embodiment of the present invention.
  • 4A to 4D are process diagrams illustrating a selective mass repair process among active multi-beam generation-based laser transfer methods according to an embodiment of the present invention.
  • FIG. 5 is a plan view illustrating a target substrate and a transfer substrate after a selective mass repair process is completed in an active multi-beam generation-based laser transfer method according to an embodiment of the present invention.
  • FIG. 6 is a conceptual diagram illustrating a variable pitch laser transfer device based on active multi-beam generation according to another embodiment of the present invention.
  • FIGS. 7A and 7E are process diagrams illustrating a selective variable pitch mass transfer process among a laser transfer method based on active multi-beam generation according to another embodiment of the present invention.
  • FIG. 8 is a conceptual diagram showing a laser transfer device using a switch and generating a multi-beam according to another embodiment of the present invention.
  • FIG. 9 is a conceptual diagram schematically showing a MEMS optical switch applied to a laser transfer device according to another embodiment of the present invention.
  • FIG. 10 is a conceptual diagram showing a laser transfer device using a switch and generating a multi-beam according to another embodiment of the present invention.
  • FIG. 11 is a conceptual diagram schematically showing an acoustic-optical modulator (AOM) applied to a laser transfer device according to another embodiment of the present invention.
  • AOM acoustic-optical modulator
  • 12A to 12F are process diagrams illustrating a method of generating a multi-beam and transferring a laser using a switch according to another embodiment of the present invention.
  • FIGS. 13A to 13D are process diagrams illustrating a selective mass repair process among a multi-beam generation and a laser transfer method using a switch according to another embodiment of the present invention.
  • FIG. 14 is a diagram illustrating an active multi-beam generation-based laser transfer method or a variable-pitch mass transfer method among the multi-beam generation and the laser transfer method using a switch according to embodiments of the present invention.
  • FIG. 1A and 1B are conceptual diagrams illustrating a selective parallel laser transfer device based on active multi-beam generation according to an embodiment of the present invention
  • FIG. 1A is a diagram illustrating a state in which multi-beams are generated and irradiated in an active multi-beam optical system
  • 1b shows a state in which multi-beams generated in an active multi-beam optical system are selectively opened and closed to irradiate them.
  • the laser transfer device 100 includes a laser oscillator 110 that generates a laser beam L, and an active multi-beam optical system that divides the laser beam L into multi-beams. -beam Optical System) 120, and an objective lens 130 that focuses on the transfer substrate S by focusing each individual element of the multi-beam. It may also include stages 141 and 142 for transferring the transfer substrate S and the target substrate T, and a controller 150 for setting a position of a transfer target point.
  • the active multi-beam optical system 120 may include a spatial light modulator (SLM) or a digital micromirror device (DMD).
  • SLM spatial light modulator
  • DMD digital micromirror device
  • the active multi-beam optical system 120 may receive a single beam generated by the laser oscillator 110 and divide it into a plurality of laser beams to generate a multi-beam. And it is possible to generate a laser beam bundle shape by selectively opening and closing each of the multi-beams.
  • 1B schematically shows a state in which the active multi-beam optical system 120 transmits a laser beam bundle shape in which some elements of the multi-beam are closed to the transfer substrate S.
  • a beam shaper 115 may be positioned between the laser oscillator 110 and the active multi-beam optical system 120.
  • the beam shaper 115 may convert the collimated Gaussian input beam emitted from the laser oscillator 110 into a flat top beam having a uniform intensity and transmit it to the active multi-beam optical system 120.
  • the objective lens 130 is provided on the optical path after the active multi-beam optical system 120 to focus each individual element of the multi-beam transmitted from the active multi-beam optical system 120 to focus on the transfer substrate S. do. Accordingly, the objective lens 130 is positioned between the transfer substrate S and the active multi-beam optical system 120.
  • the optical relay 125 may be positioned on the optical path between the active multi-beam optical system 120 and the objective lens 130.
  • the optical relay 125 may extend a multi-beam that has passed through the active multi-beam optical system 120 and transmit it to the objective lens 130.
  • the transfer substrate S has, for example, a micro LED chip Ch transferred to its surface, and may be driven biaxially in a planar direction by the stage 141.
  • the LED chips (Ch) transferred to the transfer substrate (S) can be arranged by transferring micro LED chips on an epitaxial wafer (EPI wafer) by a laser lift-off (LLO) process.
  • the dogs are adjacent to each other and are arranged vertically and horizontally.
  • the transfer substrate S may be a rigid substrate or a flexible film.
  • the target substrate T may be disposed to face the transfer substrate S and may be driven biaxially in a planar direction by the stage 142. In this case, after the target substrate T is aligned with the transfer substrate S, it may be transferred by the stage 142 along with it. In addition, the target substrate T and the transfer substrate S may be independently driven by different stages 141 and 142 to implement relative motions.
  • the target substrate T may be a rigid substrate, a flexible film, or may be formed in a three-dimensional shape.
  • FIGS. 1A and 1B are process diagrams showing a selective parallel mass transfer process among the active multi-beam generation-based laser transfer method according to an embodiment of the present invention
  • FIG. 2A shows a process of generating a laser beam bundle shape
  • FIG. 2B And 2c shows a process of performing selective mass transfer using the generated laser beam bundle shape.
  • the laser transfer method according to the present embodiment may be performed using the laser transfer apparatus 100 shown in FIGS. 1A and 1B as an example.
  • a micro LED chip Ch on an epitaxial wafer is transferred to a transfer substrate S by a laser lift-off (LLO) process.
  • LLO laser lift-off
  • the LED chip (Ch) may be formed of a substantially square or rectangular shape, and may be fully arranged on the transfer substrate S by being adjacent to each other in the vertical direction, left and right.
  • the location of the transfer target point can be set by inspecting the micro LED chip Ch transferred to the transfer substrate and recognizing the location of the defective chip Ch0. (Step (a2)). In other words, it is possible to store the coordinates of the good chip Ch1 and the defective chip Ch0 by inspecting the defective chip Ch0 generated during the LED generation or LLO process and addressing the location.
  • Step (a3) a target substrate T is prepared, the transfer substrate S is turned over to face the target substrate T, and the transfer substrate S and the target substrate T are aligned and fixed to each other. That is, in the process of the present exemplary embodiment, the transfer substrate S and the target substrate T are fixed to each other and transferred together because a mass transfer of the LED chips Ch of the transfer substrate S to the target substrate T is desired.
  • a large-area transfer area TR of the transfer substrate S is partitioned based on an NxN beam (where N is a natural number), and a bundle of laser beams capable of transferring a good chip for each of the divided transfer areas TR Create the shape. (Step (a4)).
  • NxN beam where N is a natural number
  • a bundle of laser beams capable of transferring a good chip for each of the divided transfer areas TR Create the shape.
  • it may be generated in a shape corresponding to the position of the remaining good chips Ch1 except for the defective chip Ch0 detected in the inspection process.
  • FIG. 2A as an example, four transfer regions TR in which the transfer substrate S is partitioned based on a 4x4 beam are shown.
  • the laser beam is opened only at the position of the good chip (Ch1) except for the position of the defective chip (Ch0). It is possible to create a laser beam bundle shape.
  • each transfer region TR may be sequentially transferred using the generated laser beam bundle shape.
  • the target substrate T and the transfer substrate S are aligned, and a multi-beam LL is formed in the shape of a bundle of laser beams stored for each transfer area TR, and the transfer area TR of the transfer substrate S is Investigate. (Steps (a5) to (a8)).
  • the multi-beam LL may be formed by controlling the opening and closing of each individual element of the multi-beam LL according to the shape of a laser beam bundle stored for each transfer area TR by a plurality of beams divided by the active multi-beam optical system. .
  • a two-axis stage is applied to transfer the transfer substrate S and the target substrate T together, and transfer can be performed sequentially in the 2 area, the 3 area, and the 4 area.
  • FIG 3 is a plan view illustrating a target substrate and a transfer substrate after a selective parallel mass transfer process is completed in an active multi-beam generation-based laser transfer method according to an embodiment of the present invention.
  • a good chip Ch1 has been transferred to the target substrate T on which the transfer process has been completed, except for a defective chip Ch0.
  • the LED chip Ch in the portion not included in the transfer region TR, together with the defective chip Ch0 remains on the transfer substrate S.
  • the remaining LED chip (Ch) can be utilized in the selective mass repay process described below.
  • FIG. 4A to 4D are process charts showing a selective mass repair process among the active multi-beam generation-based laser transfer method according to an embodiment of the present invention, and FIG. 4A shows a process of removing a transferred defective chip.
  • 4B to 4D illustrate a process of performing a fill-in process using the LED chip remaining on the transfer substrate.
  • Step (b1) the micro LED chip Ch transferred to the target substrate T is inspected to recognize the location of the defective chip Ch0, thereby setting the location of the target point to be removed.
  • the large area removal region Rm of the target substrate T is partitioned based on the NxN beam (where N is a natural number), and the defective chip Ch0 can be removed for each of the partitioned removal regions Rm. Generate the laser beam bundle shape. (Step (b2)). That is, the removal region Rm covering the defective chip Ch0 of the target substrate T recognized above may be partitioned and generated in a shape corresponding to the position of the detected defective chip Ch0.
  • FIG. 4A as an example, two removal regions Rm in which the target substrate T including the defective chip Ch0 is partitioned based on a 4x4 beam are shown.
  • two laser beam bundle shapes may be generated as shown in (b2) of FIG. 4A.
  • a laser multi-beam LL is formed in the shape of a laser beam bundle stored for each removal region Rm, and irradiated to the removal region of the target substrate T. (Steps (b3) to (b4)).
  • the target substrate T is transferred by applying a two-axis stage, and then removal can be performed in the area 2.
  • Step (b5) the target substrate T to which the micro LED chip Ch has been transferred is inspected to recognize the position of the non-transferred chip, thereby setting the position of the transfer target point.
  • the fill-in region FR of the target substrate T is partitioned based on the NxN beam (where N is a natural number), and the array of remaining LED chips on the transfer substrate S and the target substrate By combining the chip untransferred positions of (T), a transferable laser beam bundle shape of the good chip Ch1 is generated for each of the divided fill-in regions FR. (Step (b6)).
  • the fill-in area FR is partitioned based on a 4x4 beam, but in consideration of the arrangement of the remaining LED chips Ch remaining on the transfer substrate S, the shape is horizontally or vertically long.
  • Four fill-in regions (FR) of can be partitioned. That is, the fill-in areas (FR) 1 and 3 are set as 4x1 areas, and the remaining LED chips (Ch) arranged in the transverse direction of the transfer substrate (S) are transferred correspondingly, and the fill-in areas (FR) 2, 4 is set as a 1x4 area, and the remaining LED chips Ch arranged in the longitudinal direction of the transfer substrate S can be transferred to correspond to each other.
  • only individual laser beams corresponding to the untransferred position of the chip are opened in each fill-in area FR, thereby generating four types of laser beam bundle shapes as shown in (b6) of FIG. 4B.
  • each fill-in area FR may be sequentially transferred using the generated laser beam bundle shape.
  • the target substrate (T) and the transfer substrate (S) are aligned, and a multi-beam (LL) is formed in the shape of a laser beam bundle stored for each fill-in area (FR) to form a fill-in area of the transfer substrate (S). (FR). (Steps (b7) to (b10)).
  • a two-axis stage is applied to transfer the transfer substrate (S) and the target substrate (T), and transfer is performed sequentially in the 2 area, 3 area, and 4 area. I can.
  • FIG. 5 is a plan view illustrating a target substrate and a transfer substrate after a selective mass repair process is completed in an active multi-beam generation-based laser transfer method according to an embodiment of the present invention.
  • a good chip Ch1 has been transferred to the target substrate T on which the repair process has been completed.
  • an LED chip Ch that has not been used in the repair process remains on the transfer substrate S along with a defective chip Ch0.
  • FIG. 6 is a conceptual diagram illustrating a variable pitch laser transfer device based on active multi-beam generation according to another embodiment of the present invention.
  • the laser transfer device 200 includes a laser oscillator 110 that generates a laser beam L, and an active multi-beam optical system that divides the laser beam L into multi-beams.
  • -beam Optical System 120 and a laser scanner 210 that changes the optical path by reflecting the transmitted laser beam. It may also include stages 141 and 142 for transferring the transfer substrate S and the target substrate T, and a controller 150 for setting a position of a transfer target point.
  • the active multi-beam optical system 120 may receive a single beam generated by the laser oscillator 110 and divide it into a plurality of laser beams to generate a multi-beam. And it is possible to generate a laser beam bundle shape by selectively opening and closing each of the multi-beams.
  • the active multi-beam optical system 120 may include a spatial light modulator (SLM) or a digital micromirror device (DMD).
  • a beam shaper 105 may be positioned between the laser oscillator 110 and the active multi-beam optical system 120.
  • the beam shaper 115 may convert the collimated Gaussian input beam emitted from the laser oscillator 110 into a flat top beam having a uniform intensity and transmit it to the active multi-beam optical system 120.
  • the laser scanner 210 may irradiate the multi-beam toward the transfer substrate S and the target substrate T by changing an optical path by reflecting the multi-beams transmitted from the active multi-beam optical system 120.
  • a telecentric lens 220 is provided on the optical path after the laser scanner 210 to focus the multi-beam reflected and transmitted from the laser scanner 210 to the transfer substrate S and the target substrate T. You can make it fit. That is, the telecentric lens 220 is positioned between the transfer substrate S and the laser scanner 210.
  • the optical relay 125 may be positioned on the optical path between the active multi-beam optical system 120 and the laser scanner 210.
  • the optical relay 125 may extend a multi-beam that has passed through the active multi-beam optical system 120 and transmit it to the laser scanner 210.
  • the transfer substrate S has, for example, a micro LED chip Ch transferred to its surface, and may be driven biaxially in a planar direction by the stage 141.
  • the LED chips (Ch) transferred to the transfer substrate (S) can be arranged by transferring micro LED chips on an epitaxial wafer (EPI wafer) by a laser lift-off (LLO) process.
  • the dogs are adjacent to each other and are arranged vertically and horizontally.
  • the transfer substrate S may be a rigid substrate or a flexible film.
  • the target substrate T may be disposed to face the transfer substrate S and may be driven biaxially in a planar direction by the stage 142. In this case, the target substrate T may be transferred by the stages 141 and 142 together after being aligned with the transfer substrate S. In addition, the target substrate T and the transfer substrate S may be independently driven by different stages 141 and 142 to implement relative motions.
  • the target substrate T may be a rigid substrate, a flexible film, or may be formed in a three-dimensional shape.
  • FIG. 7A and 7E are process diagrams showing a selective variable pitch mass transfer process among the active multi-beam generation-based laser transfer method according to another embodiment of the present invention, and FIG. 7A shows a process of generating a laser beam bundle shape. 7B to 7E illustrate a process of performing selective mass transfer using the generated laser beam bundle shape.
  • the laser transfer method according to the present embodiment may be performed using the laser transfer device 200 shown in FIG. 6 as an example.
  • the laser lift-off (LLO) process moves the micro LED chip (Ch) to the transfer substrate (S), and inspects the transferred micro LED chip (Ch) to recognize the location of the defective chip (Ch0) to determine the location of the transfer target point.
  • the setting, and the process of turning the transfer substrate S upside down to face the target substrate T and aligning and fixing with each other may be performed in the same manner as steps (a1) to (a3) of FIG. 2A.
  • the large-area transfer area TR of the transfer substrate S is divided based on an NxN beam (where N is a natural number), and each of the divided transfer areas With respect to (TR), a transferable laser beam bundle shape of the good chip Ch1 is generated. (Step (c1)). In this case, it may be generated in a shape corresponding to the position of the remaining good chips Ch1 except for the defective chip Ch0 detected in the inspection process.
  • each individual element beam of the 2x2 beam can be irradiated by changing a pitch separated by an integer multiple of the horizontal and vertical intervals of the LED chips (Ch) constituting each transfer area (TR) and irradiated. It can be irradiated with a pitch spaced apart by the width of TR).
  • the scan path of each individual element of the multi-beam may be made along a path meandering from the upper left end to the lower left end in each transfer region TR, as shown in FIG. 7A.
  • all of the transfer regions TR may be sequentially transferred using the generated laser beam bundle shape.
  • Steps (c2) to (c9) the target substrate T and the transfer substrate S are aligned, and individual beams corresponding to identically corresponding positions of each transfer region TR are simultaneously irradiated.
  • Steps (c2) to (c9) it is based on the shape of the laser beam bundle stored for each transfer area (TR), and the individual elements of the multi-beam corresponding to the good chip (Ch1) are opened, and the individual elements of the multi-beam (LL) corresponding to the defective chip (Ch0) are Elements can be closed.
  • step (c2) a laser beam is irradiated at the position of the first LED chip (Ch) in each transfer area (TR) to transfer the LED chip (Ch) to the target substrate (T), and responds to the defective chip (Ch0).
  • the laser beam at the position is closed and is not irradiated.
  • steps (c3)-(c5) the laser beam is irradiated to the next LED chip (Ch) position while moving to the right side in the horizontal direction, and this movement drives the stage to the left side in the transverse direction to the transfer substrate S and the target substrate ( It can be achieved by moving T).
  • the laser beam is irradiated to the next LED chip (Ch) by moving downwards in the longitudinal direction as in step (c6). It can be achieved by driving the stage vertically upward to move the transfer substrate S and the target substrate T.
  • step (c7) the laser beam is irradiated to the next LED chip (Ch) position while moving to the left in the transverse direction, and the transfer process is completed by transferring to the last LED chip (Ch) in each transfer area (TR) in step (c9). do.
  • the selective mass repair process described with reference to FIGS. 4A to 4D may be similarly performed using the laser transfer device 200 including the laser scanner 210 shown in FIG. 6. Accordingly, the transferred defective chip can be removed from the target substrate, and a fill-in process can be performed using the LED chip remaining on the transfer substrate.
  • FIG. 8 is a conceptual diagram showing a laser transfer device using a switch and generating a multi-beam according to another embodiment of the present invention.
  • the laser transfer device 300 includes a laser oscillator 310 for generating a laser beam L, a multi-beam generating optical system for dividing the laser beam L into multi-beams, and individual elements of the multi-beams. It includes an optical switch 330 for selectively opening and closing the beam. In addition, it includes a laser scanner 340 that changes the optical path by reflecting the transmitted laser beam, and sets the positions 341 and 342 for transferring the transfer substrate S and the target substrate T, and the transfer target point. It may include a controller 350.
  • the multi-beam generating optical system may generate a multi-beam by receiving a single beam generated by the laser oscillator 310 and dividing it into a plurality of laser beams.
  • the optical switch may generate a laser beam bundle shape by selectively opening and closing each individual element beam of the multi-beam divided in the multi-beam generating optical system.
  • a diffraction optical element (DOE) 320 may be applied to the multi-beam generating optical system in this embodiment, and in this case, a microelectromechanical (MEMS) optical switch 330 may be applied as the optical switch.
  • the diffractive optical element 320 uses a phenomenon in which a laser beam incident by a pattern engraved on the element is diffracted and emitted, and the incident single beam may generate a multi-beam having a plurality of individual element beams by diffraction. At this time, since the diffractive optical element 320 is a passive element, a fixed beam pattern is generated.
  • FIG. 9 is a conceptual diagram schematically showing a MEMS optical switch applied to a laser transfer device according to another embodiment of the present invention.
  • the MEMS optical switch 330 may be formed by arranging a plurality of mirrors 332 in a matrix structure based on MEMS (Microelectromechanical) technology and having a MEMS structure 334 capable of individually driving each of these mirrors. have.
  • a plurality of shutters may be arranged in a matrix structure and a MEMS structure capable of individually turning on/off each of the shutters may be provided. It may be a reflective switch or a shutter type switch depending on the presence of a mirror or shutter.
  • the MEMS optical switch 330 may turn on/off each of a plurality of individual element beams of the incident multi-beam, and it is connected to the controller 350 to receive information on the transfer target point to determine whether to turn on/off the beam. I can.
  • the MEMS optical switch 330 may be a multi-channel sequential on/off control type switch.
  • a beam shaper 315 may be positioned between the laser oscillator 310 and the diffractive optical element 320.
  • the beam shaper 315 may convert the collimated Gaussian input beam emitted from the laser oscillator 310 into a flat top beam having a uniform intensity and transmit it to the diffractive optical element 320.
  • an optical relay 325 may be positioned on an optical path between the diffractive optical element 320 and the MEMS optical switch 330.
  • the optical relay 325 may extend the multi-beam passing through the diffractive optical element 320 and transmit it to the MEMS optical switch 330.
  • the laser scanner 340 may irradiate the multi-beam toward the transfer substrate S and the target substrate T by changing the optical path by reflecting the multi-beams transmitted from the diffractive optical element 320.
  • a telecentric lens 345 is provided on the optical path after the laser scanner 340 to focus the multi-beam reflected and transmitted from the laser scanner 340 to the transfer substrate S and the target substrate T. You can make it fit. That is, the telecentric lens 345 is positioned between the transfer substrate S and the laser scanner 340.
  • the transfer substrate S has, for example, a micro LED chip Ch transferred to its surface, and may be driven biaxially in a planar direction by the stage 341.
  • the LED chips (Ch) transferred to the transfer substrate (S) can be arranged by transferring micro LED chips on an epitaxial wafer (EPI wafer) by a laser lift-off (LLO) process.
  • the dogs are adjacent to each other and are arranged vertically and horizontally.
  • the transfer substrate S may be a rigid substrate or a flexible film.
  • the target substrate T may be disposed to face the transfer substrate S and may be driven biaxially in a planar direction by the stage 342. In this case, after the target substrate T is aligned with the transfer substrate S, it may be transferred by the stage 342 together with it. In addition, the target substrate T and the transfer substrate S may be independently driven by different stages 341 and 342 to implement relative motions.
  • the target substrate T may be a rigid substrate, a flexible film, or may be formed in a three-dimensional shape.
  • FIG. 10 is a conceptual diagram showing a laser transfer device using a switch and generating a multi-beam according to another embodiment of the present invention.
  • the laser transfer device 400 of this embodiment is a laser transfer device that converts a single laser beam generated by the laser oscillator 310 into a multi-beam using an optical fiber 423, and a multi-beam generating optical system It includes a furnace optical coupler 420, and includes an AOM (Acousto-optic Modulator) switch 430 as an optical switch. In addition, it includes a laser scanner 340 that changes the optical path by reflecting the transmitted laser beam, and sets the positions 341 and 342 for transferring the transfer substrate S and the target substrate T, and the transfer target point. It may include a controller 350.
  • AOM Acoustic-optic Modulator
  • the optical coupler 420 may receive a single laser beam and output a multi-beam divided into a plurality of pieces.
  • the AOM switch 430 may receive a multi-beam divided into a plurality of inputs and output a selectively opened and closed multi-beam.
  • FIG. 11 is a conceptual diagram schematically showing an acoustic-optical modulator (AOM) applied to a laser transfer device according to another embodiment of the present invention.
  • AOM acoustic-optical modulator
  • Acousto-optic modulator is a device that uses the acoustic-optic effect, which is an effect of periodically changing the refractive index of light by transforming a medium with sound waves or ultrasonic waves.
  • the medium acts as a phase grating, and the laser beam passing through it is diffracted.
  • a piezoelectric transducer 432 is attached to one side of a transparent crystal medium 431 such as quartz or glass to generate sound waves, and an acoustic absorber 433 is provided on the opposite side thereof. Light incident on the medium 431 may be diffracted due to the sound wave generated at this time.
  • the AOM switch 430 has an acoustic-optical modulator (AOM) prepared in consideration of the number of incident laser beams using this phenomenon, and is connected to the controller 350 to receive and pass information of the transfer target point therefrom. You can choose to open or close the beam.
  • AOM acoustic-optical modulator
  • a collimator 435 may be positioned between the AOM switch 430 and the laser scanner 340.
  • the collimator 435 may be connected to the output terminal of the AOM switch 430 and transmit a laser beam emitted therefrom to the laser scanner 340.
  • the multi-beams output in this way are transmitted to the laser scanner 340 to change the path and pitch to connect the transfer substrate S and the target substrate T. Can be investigated towards.
  • the laser scanner 340 reflects the multi-beams transmitted from the AOM switch 430 and changes the optical path to irradiate the multi-beams toward the transfer substrate S and the target substrate T.
  • a telecentric lens 345 is provided on the optical path after the laser scanner 340 to focus the multi-beam reflected and transmitted from the laser scanner 340 to the transfer substrate S and the target substrate T. You can make it fit. That is, the telecentric lens 345 is positioned between the transfer substrate S and the laser scanner 340.
  • an optical fiber type MEMS optical switch can be used in place of the AOM switch 430.
  • the optical switch includes a multi-channel simultaneous on/off control type switch and a multi-channel sequential on/off control type switch, and both of these can be applied in this embodiment.
  • FIGS. 12A to 12F are process charts illustrating a method of generating a multi-beam and a laser transfer method using a switch according to another embodiment of the present invention
  • FIGS. 12A and 12B illustrate a process of generating a bundle shape of a laser beam
  • FIGS. 12C to 12C 12f shows a process of performing selective mass transfer using the generated laser beam bundle shape.
  • the transfer method according to the present embodiment may be performed by driving the laser transfer device shown in FIGS. 8 and 10 as an example.
  • a micro LED chip Ch on an epitaxial wafer is transferred to a transfer substrate S by a laser lift-off (LLO) process.
  • LLO laser lift-off
  • the LED chip (Ch) may be formed of a substantially square or rectangular shape, and may be fully arranged on the transfer substrate S by being adjacent to each other in the vertical direction, left and right.
  • the location of the transfer target point may be set by inspecting the micro LED chip Ch transferred to the transfer substrate S and recognizing the location of the defective chip Ch0. (Step (d2)). In other words, it is possible to store the coordinates of the good chip Ch1 and the defective chip Ch0 by inspecting the defective chip Ch0 generated during the LED generation or LLO process and addressing the location.
  • a target substrate T is prepared, the transfer substrate S is turned over to face the target substrate T, and the transfer substrate S and the target substrate T are aligned and fixed to each other. (Step (d3)). That is, in the process of the present exemplary embodiment, the transfer substrate S and the target substrate T may be fixed to each other and transferred together because a mass transfer of the LED chips Ch of the transfer substrate S to the target substrate T is desired.
  • a large-area transfer region TR of the transfer substrate S is partitioned based on an NxN beam (where N is a natural number), For each of the divided transfer regions TR, a transferable laser beam bundle shape of the good chip Ch1 is generated. (Step (d4)). In this case, it may be generated in a shape corresponding to the position of the remaining good chips Ch1 except for the defective chip Ch0 detected in the inspection process.
  • each individual element beam of the 2x2 beam can be irradiated by changing a pitch separated by an integer multiple of the horizontal and vertical intervals of the LED chips (Ch) constituting each transfer area (TR) and irradiated. It can be irradiated with a pitch spaced apart by the width of TR).
  • the scan path of each individual element of the multi-beam may be formed along a path meandering from the upper left end to the lower left end in each transfer region TR, as shown in FIG. 12B.
  • all of the transfer regions TR may be sequentially transferred using the generated laser beam bundle shape.
  • the target substrate T and the transfer substrate S are aligned, and individual beams corresponding to identically corresponding positions of each transfer region TR are simultaneously irradiated. (Steps (d5) to (d12)). At this time, it is based on the shape of the laser beam bundle stored for each transfer area TR, and the individual elements of the multi-beam LL corresponding to the good chip Ch1 are opened, and the multi-beam LL corresponding to the defective chip Ch0 is opened. ) Individual elements can be closed.
  • step (d5) a laser beam is irradiated to the position of the first LED chip (Ch) in each transfer area (TR) to transfer the LED chip (Ch) to the target substrate (T), and responds to the defective chip (Ch0).
  • the laser beam at the position is closed and not irradiated.
  • steps (d5)-(d8) the laser beam is irradiated to the next LED chip (Ch) position while moving to the right in the horizontal direction, and this movement drives the stage to the left in the horizontal direction to drive the transfer substrate (S) and the target substrate ( It can be achieved by moving T).
  • the laser beam is irradiated to the next LED chip (Ch) by moving downwards in the longitudinal direction as in step (d9). It can be achieved by driving the stage vertically upward to move the transfer substrate S and the target substrate T.
  • step (d10) the laser beam is irradiated to the next LED chip (Ch) position while moving to the left in the transverse direction, and the transfer process is completed by transferring to the last LED chip (Ch) in each transfer area (TR) in step (d12). do.
  • the target substrate and the transfer substrate after the process of the laser transfer method according to the present embodiment is completed are as shown in FIG. 3.
  • the good chip Ch1 has been transferred to the target substrate T on which the transfer process has been completed, except for the defective chip Ch0.
  • the LED chip Ch in the portion not included in the transfer region TR, together with the defective chip Ch0 remains on the transfer substrate S. This remaining LED chip (Ch) can be used in the selective mass repair process described below.
  • FIGS. 8 and 10 are process diagrams showing a selective mass repair process among the multi-beam generation and laser transfer method using a switch according to an embodiment of the present invention
  • FIG. 13A shows a process of removing a transferred defective chip
  • 13B to 13D illustrate a process of performing a fill-in process using the LED chip remaining on the transfer substrate.
  • the laser transfer method according to the present embodiment may be performed by driving the laser transfer device shown in FIGS. 8 and 10 as an example.
  • Step (e1) the micro LED chip Ch transferred to the target substrate T is inspected and the location of the defective chip Ch0 is recognized, thereby setting the location of the target point to be removed.
  • the large area removal region Rm of the target substrate T is partitioned based on the NxN beam (where N is a natural number), and the defective chip Ch0 can be removed for each of the partitioned removal regions Rm. Generate the laser beam bundle shape. (Step (e2)). That is, the removal region Rm covering the defective chip Ch0 of the target substrate T recognized above may be partitioned and generated in a shape corresponding to the position of the detected defective chip Ch0.
  • FIG. 13A as an example, two removal regions Rm in which the target substrate T including the defective chip Ch0 is partitioned based on a 4x4 beam are shown.
  • two laser beam bundle shapes may be generated as shown in (e2) of FIG. 13A.
  • a laser multi-beam LL is formed in the shape of a laser beam bundle stored for each removal region Rm, and irradiated to the removal region of the target substrate T.
  • Steps (e3) to (e4) When the irradiation of the laser multi-beam (LL) is completed in the 1 area of the target substrate (T), the target substrate (T) is transferred by applying a 2-axis stage, and then the laser multi-beam (LL) is irradiated in the area 2. I can. As a result, only the defective chip Ch0 can be selected and removed from among the LED chips transferred to the target substrate T.
  • the target substrate T to which the micro LED chip Ch has been transferred is inspected to recognize the untransferred position of the chip, thereby setting the position of the transfer target point. (Step (e5)).
  • the fill-in region FR of the target substrate T is partitioned based on the NxN beam (where N is a natural number), and the array of remaining LED chips on the transfer substrate S and the target substrate By combining the chip untransferred positions of (T), a transferable laser beam bundle shape of the good chip Ch1 is generated for each of the divided fill-in regions FR. (Step (e6)).
  • the fill-in area FR is partitioned based on a 4x4 beam, but in a horizontal or vertical form in consideration of the arrangement of the remaining LED chips Ch remaining on the transfer substrate S.
  • Four fill-in regions (FR) of can be partitioned. That is, the fill-in areas (FR) 1 and 3 are set as 4x1 areas, and the remaining LED chips (Ch) arranged in the transverse direction of the transfer substrate (S) are transferred correspondingly, and the fill-in areas (FR) 2, 4 is set as a 1x4 area, and the remaining LED chips Ch arranged in the longitudinal direction of the transfer substrate S can be transferred to correspond to each other.
  • only individual laser beams corresponding to the untransferred position of the chip are opened in each fill-in area FR to generate four types of laser beam bundle shapes as shown in (e6) of FIG. 13B.
  • each fill-in area FR may be sequentially transferred using the generated laser beam bundle shape.
  • the target substrate T and the transfer substrate S are aligned, and a multi-beam LL is formed in the shape of a laser beam bundle stored for each fill-in region FR to form a fill-in region ( FR) sequentially. (Steps (e7) to (e10)).
  • a two-axis stage is applied to transfer the transfer substrate (S) and the target substrate (T), and transfer is performed sequentially in the 2 area, 3 area, and 4 area. I can.
  • the target substrate and the transfer substrate after the selective mass repair process is completed are as shown in FIG. 5.
  • the good chip Ch1 has been transferred to the target substrate T on which the repair process has been completed.
  • an LED chip Ch that has not been used in the repair process remains on the transfer substrate S along with a defective chip Ch0.
  • FIG. 14 is a diagram illustrating an active multi-beam generation-based laser transfer method or a variable-pitch mass transfer method among a laser transfer method using a multi-beam generation and a switch according to embodiments of the present invention.
  • Pitch An example (a) using a multi-beam pattern, an example (b) using a middle pitch multi-beam pattern, and an example (c) using a wide pitch multi-beam pattern are shown.
  • each individual element beam is opened and closed in a form that is an integral multiple of the chip spacing to generate a multi-beam pattern. Can be transcribed.
  • the switch of each individual element beam is opened and closed in the form of an integer multiple of the chip spacing in the laser transfer device using the multi-beam generation and switch according to the embodiments shown in FIGS. 8 and 10. It can also be transferred by creating a multi-beam pattern.
  • FIG. 14 shows a multi-beam pattern with a narrow pitch in which a beam is generated in accordance with the spacing of the LED chips Ch disposed on the transfer substrate S, that is, as it is formed on the wafer.
  • FIG. 14B shows a multi-beam pattern of intermediate pitch generated so that a beam is generated by crossing one chip (Ch) in the horizontal and vertical directions and the beams are successively formed in the diagonal direction.
  • FIG. 14C shows a multi-beam pattern with a wide pitch in which a beam is generated by crossing one chip Ch in all of the horizontal, vertical, and diagonal directions.
  • the LED chips (Ch) in various arrangements to the divided transfer area at once, and the scanning process can be omitted.
  • the selective transfer process described with reference to FIGS. 2A to 5 and 12A to 12F may be applied.
  • the LED chip (Ch) is made densely on the wafer, and then rearranged at the intervals required by the target substrate (T), so that the wafer can be sufficiently utilized without being discarded.
  • the process conditions can be changed only by modifying the multi-beam pattern generation program in the controller without replacing the optical system or other hardware of the equipment, thus reducing cost and increasing efficiency. .
  • a semiconductor device formed on a wafer and transferred to a target substrate through a transfer substrate.
  • a semiconductor device may include not only the micro LED chip described above, but also a semiconductor-based electronic device including a micro device and a thin device.
  • Ch Micro LED chip
  • Ch1 good chip

Abstract

Un dispositif de transfert par laser basé sur la génération de faisceaux multiples selon un mode de réalisation de la présente invention comprend : un oscillateur laser qui génère un faisceau laser ; un système optique à faisceaux multiples actif qui divise le faisceau laser en de multiples faisceaux et ouvre et ferme sélectivement chacun des éléments individuels des multiples faisceaux ; un étage qui transfère un substrat de transfert et un substrat cible dans une direction biaxiale ; et un dispositif de commande qui règle la position d'un point cible de transfert et transmet un signal de position au système optique à faisceaux multiples actif et à l'étage de façon à commander l'entraînement de l'étage et l'ouverture/la fermeture des multiples faisceaux en fonction du signal de position.
PCT/KR2020/014432 2019-10-21 2020-10-21 Dispositif de transfert sélectif par laser et procédé de transfert WO2021080327A1 (fr)

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KR1020190130986A KR102302140B1 (ko) 2019-10-21 2019-10-21 멀티빔 생성과 스위치를 이용한 선택적 레이저 전사 장치 및 방법
KR10-2019-0130985 2019-10-21
KR1020190130985A KR102329818B1 (ko) 2019-10-21 2019-10-21 능동 멀티빔 생성 기반 선택적 레이저 전사 장치 및 방법
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KR20180070326A (ko) * 2016-12-16 2018-06-26 주식회사 이오테크닉스 멀티빔을 이용한 레이저 가공 장치 및 이에 사용되는 광학계
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KR20190109078A (ko) * 2018-03-16 2019-09-25 한국광기술원 Led 구조체 전사장치

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WO2023124898A1 (fr) * 2021-12-31 2023-07-06 天合光能股份有限公司 Dispositif d'impression par transfert laser
CN117012681A (zh) * 2023-09-19 2023-11-07 北京海炬电子科技有限公司 一种激光解胶针刺气动芯片巨量转移机构
CN117012681B (zh) * 2023-09-19 2023-12-29 北京海炬电子科技有限公司 一种激光解胶针刺气动芯片巨量转移机构

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