WO2021076154A1 - Cmos color image sensors with metamaterial color splitting - Google Patents

Cmos color image sensors with metamaterial color splitting Download PDF

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Publication number
WO2021076154A1
WO2021076154A1 PCT/US2019/057026 US2019057026W WO2021076154A1 WO 2021076154 A1 WO2021076154 A1 WO 2021076154A1 US 2019057026 W US2019057026 W US 2019057026W WO 2021076154 A1 WO2021076154 A1 WO 2021076154A1
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Prior art keywords
voids
dielectric
scattering structure
void
size
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PCT/US2019/057026
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English (en)
French (fr)
Inventor
Gregory Roberts
Philip Camayd-Munoz
Conner Ballew
Andrei Faraon
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California Institute Of Technology
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Priority to KR1020227015534A priority Critical patent/KR20220083736A/ko
Priority to JP2022515969A priority patent/JP7503623B2/ja
Priority to PCT/US2019/057026 priority patent/WO2021076154A1/en
Priority to CN201980101356.5A priority patent/CN114556166B/zh
Publication of WO2021076154A1 publication Critical patent/WO2021076154A1/en

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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/02Diffusing elements; Afocal elements
    • G02B5/0205Diffusing elements; Afocal elements characterised by the diffusing properties
    • G02B5/0236Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element
    • G02B5/0247Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element by means of voids or pores
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/02Diffusing elements; Afocal elements
    • G02B5/0268Diffusing elements; Afocal elements characterized by the fabrication or manufacturing method
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/02Diffusing elements; Afocal elements
    • G02B5/0273Diffusing elements; Afocal elements characterized by the use
    • G02B5/0278Diffusing elements; Afocal elements characterized by the use used in transmission

Definitions

  • the presented disclosure is related to image sensors, and more particularly to metamaterial spectrum splitters manufactured using CMOS fabrication technology.
  • Optical systems are typically designed via modular combinations of elements to achieve complex functions. For example, lenses and diffractive optics can be combined to perform hyperspectral imaging. This approach is intuitive and flexible, providing access to a wide range of functions from a limited set of elements. However, the overall size and weight of the optical system may limit its scope of applications. Recent advancements in nanofabrication may alleviate this constraint by replacing bulky elements with metasurfaces — planar arrays of resonant nanostructures with sub -wavelength thickness. By engineering the scattering of individual elements within the array, these devices can reproduce the multi-functionality of complex optical systems in a single element.
  • optical design has been modular, a paradigm that provides an intuitive way to build and reconfigure optical setups.
  • nanofabrication technologies it became possible to make structures with sub-wavelength feature size that enabled multi-functional optical elements combining the functionality of more complex setups. Examples include metasurface lenses that can split different polarizations and spectral bands.
  • metasurface lenses that can split different polarizations and spectral bands.
  • the degree of performance and functionality that can be achieved with metasurfaces and other planar structures is inherently limited by the number of optical modes that can be controlled.
  • Fig. 1A shows a prior art image sensor, wherein each four neighboring pixels has an absorptive color filter on top: two are for green, one for blue and one for red.
  • the issue with such an image sensor is that the efficiency is limited to around 30%, as most of the light is absorbed.
  • Color image sensors are ubiquitous in cell phones, cameras and numerous kinds of instrumentation. .
  • the color is detected by simple absorptive filters placed directly on top of each pixel.
  • the absorptive nature of the filters means that more than 2/3 of the light is actually lost by absorption, i.e. for example red and blue light incident on the green pixel is absorbed and only green passes through SUMMARY
  • the disclosed methods and devices teach various steps to design 3D scattering structures using a scalable fabrication process.
  • the most scalable fabrication that can handle dimensions smaller than lOOnm is the CMOS foundry fabrication process.
  • the CMOS process it is possible to fabricate very complex networks of copper wires stacked on top of each other and embedded in Si02.
  • Fig. IB shows an example of such networks, wherein light and dark gray represent metal and Si02 respectively.
  • the wires can be etched away using liquid etchants so that the final 3D scattering structure is composed of voids in Si02.
  • the 3D scattering structure can be left as voids in Si02, or the voids can be filled with higher refractive index materials like Ti02 using atomic layer deposition processes.
  • a method for building a three- dimensional (3D) scattering structure comprising: forming a dielectric structure comprising a first dielectric and a network of metal wires, wherein location, shape and size of the metal wires are selected according to one or more target functions; and etching away the metal wires from the dielectric structure, thus forming a structure containing spaces filled with the first dielectric and voids, wherein location, shape and size of the voids is according to the one or more target functions, wherein the thus formed 3D light scattering structure is configured to receive electromagnetic waves and scatter the electromagnetic waves in accordance with the one or more target functions.
  • FIG. 1 A shows a prior art image sensor.
  • Fig. IB shows a prior art structure of wires that can be realized using CMOS foundry fabrication techniques, with feature sizes below 100 nm.
  • Figs. 2A-2A’ show exemplary three-dimensional (3D) scattering structures according to an embodiment of the present disclosure.
  • Figs. 2B-2C show the wavelength splitting functionality of the embodiment of Figs. 2Aand 2A.
  • Figs. 3A-3C show an exemplary three-dimensional (3D) scattering structure according to another embodiment of the present disclosure.
  • Fig. 3D shows multiple steps of an exemplary optimization algorithm in accordance with an embodiment of the present disclosure.
  • Fig. 4A shows an exemplary 3D structure made of dielectric and comprising wire networks in accordance with an embodiment of the present disclosure.
  • Fig. 4B shows an exemplary process of etching away the wire network within a 3D structure, in accordance with a further embodiment of the present disclosure.
  • Fig. 5 shows an exemplary flowchart illustrating various steps of designing a 3D scattering structure in accordance with the teachings of the present disclosure.
  • Fig. 6 shows an exemplary graph illustrating the refractive index distribution along horizontal position.
  • Figs. 7A-7C show graphs representing the performance of a 3D scattering structure implemented in accordance with the teachings of the present disclosure.
  • Fig. 2A shows an image sensor (200) according to an embodiment of the present disclosure.
  • the image sensor (200) comprises a three-dimensional (3D) scattering structure (201) functioning as a spectrum splitter.
  • the 3D scattering structure (201) comprises a plurality of dielectric pillars (205) formed to scatter light in a predefined pattern.
  • Incident light (202) passing through the 3D scattering structure (201) is scattered off the dielectric pillars.
  • the scattering pattern is tailored to perform a desired function.
  • the 3D scattering structure (201) may be designed as a spectrum splitter to simultaneously sort and focus the incident light (202) into an arbitrary number of wavelengths ( u ...,A n ) each directed to an individual pixel on a focal plane (203) placed underneath the 3D scattering structure (201), as shown in Fig. 2A.
  • the 3D scattering structure (201) may be a porous polymer cube or a cluster of dielectric or semiconductor (Si for example) particles embedded in a Si02 matrix.
  • the 3D scattering structure (201) may be a porous polymer cube or a cluster of high- refractive index particles embedded in a low-refractive-index matrix.
  • the 3D scattering structure (201) of Fig. 2A may be manufactured through known and scalable lithographic processes.
  • the 3D scattering structure (201) of Fig. 2A may be designed to function as a spectrum splitter for arbitrary spectral bands such as infrared, mid-infrared or alike. In other words, in addition to hyperspectral imaging, thermal imaging is another potential application of the disclosed teachings.
  • the spectrum splitting function may be combined with other desired functions such as polarization splitting.
  • Embodiments according to the present disclosure may also be designed to perform optical image processing such as Gabor filtering for edge detection.
  • Fig. 2A’ shows an image sensor (200’) comprising an exemplary three-dimensional (3D) scattering structure (21) functioning as a spectrum filter, according to an embodiment of the present disclosure.
  • Incident light (22) entering from the above is scattered while passing through the 3D scattering structure (21) and sorted in a focal plane (23) consisting of four sub-pixels, shown as red, blue, green (x-polarized) and green (y -polarized).
  • the red (600 nm - 700 nm) and blue (400 nm - 500 nm) spectral bands are sorted into opposite quadrants.
  • the green (500 nm - 600 nm) spectral band is further split according to linear polarization.
  • the red and blue quadrants may be polarization independent.
  • the 3D scattering structure (21) may be designed using an adjoint variable method, which generates a structure that optimizes a specified objective function.
  • the objective function may be selected based on the focusing efficiency of incident light into one of four target areas depending on the frequency and polarization.
  • FDTD full-wave finite-difference time-domain simulations are implemented to calculate the sensitivity of this figure of merit to perturbations of the refractive index.
  • the prescribed scattering structure is formed and updated iteratively. In other words, the optimal design is generated through iterative updates to an initial geometry, each step improving the performance.
  • the sensitivity may be calculated from just two simulations, allowing efficient optimization of 3D devices with modest resources.
  • the sensitivity for multiple incident wavelengths across the visible spectrum may be calculated, to assign each spectral band to a different quadrant: red (600 nm - 700 nm) green (500 nm - 600 nm) and blue (400 nm - 500 nm). Then a spectrally-averaged sensitivity may be used to update the refractive index of the device.
  • Figs. 2B-2C show the simulated intensity of the incident light within the 3D scattering structure (21) of Fig. 2A ⁇ The intensity is analyzed along a diagonal cross section that intersects the red and blue quadrants of Fig. 2 A’. Each wavelength undergoes multiple scattering before focusing to its respective target region.
  • the 3D scattering structure (21) of Fig. 2A’ sorts red, green, and blue light with 84%, 60% and 87% efficiency respectively.
  • the efficiency is defined as the fraction of the total power incident on the device that reaches the target quadrant averaging across the spectrum for which the device is designed for, i.e. the visible spectrum for the embodiment of Fig. 2A ⁇
  • each layer consists of a series of patterned mesas composed of a high-index dielectric.
  • the interstitial space is filled with a low-index dielectric, forming a flat surface that serves as a substrate for subsequent layers.
  • the 3D scattering structure (31) of Fig. 3C may be structured by stacking the plural layers (301, ..., 305) of Fig. 3A on top of one another.
  • the fabrication process may be CMOS-compatible wherein the fabrication constraints may be directly incorporated with the design algorithm.
  • Each layer (301, ..., 305) may be produced using lithography.
  • the 3D scattering structure (31) may be composed of Ti02 and Si02, materials that are transparent at visible frequencies.
  • each layer may comprise a set of irregular Ti02 mesas surrounded by Si02.
  • the lithography process may begin by growing a thin layer of dielectric (e.g. Ti02) on top of a substrate (e.g. Si02). A pattern is transferred onto this layer by lithography and the unprotected material is etched away to produce a two-dimensional dielectric structure.
  • the surface is coated (deposition) with low-refractive index dielectric and mechanically polished (planarization).
  • exemplary three-dimensional dielectric structures optimized to perform a target optical scattering function are designed according to the teachings of the disclosure.
  • such target scattering function consists of focusing incident plane waves to different positions depending on the frequency and polarization.
  • the exemplary three- dimensional (3D) scattering structures (21, 31) are defined by a spatially-dependent refractive index distribution n(x ) within a cubic design region. This represents an expansive design space with the capacity to express a broad range of complex optical multi-functionality.
  • identifying the optimal index distribution for a given target function remains a challenging inverse design problem, particularly for strongly scattering devices.
  • an iterative approach guided by gradient descent may be implemented, wherein starting from an initial index distribution, full-wave simulations (FDTD) is used to calculate the sensitivity of the focusing efficiency with respect to perturbations of the refractive index.
  • the sensitivity may be calculated from just two simulations, allowing efficient optimization of three- dimensional devices with modest resources. Based on the sensitivity, the initial design is modified in order to maximize the performance while conforming to fabrication constraints. This update process is repeated until the optimized device can efficiently perform the target function
  • Fig. 3D showing multiple steps of a gradient based optimization algorithm in accordance with an embodiment of the present disclosure.
  • This distribution is continually updated to maximize the electromagnetic intensity at the target location in focal plane, This objective function serves as a proxy for focusing efficiency while simplifying the sensitivity calculation.
  • the sensitivity, (x) is computed, step 74, from the electromagnetic fields in two FDTD simulations (forward and adjoint), steps (72, 73), according to the following expression:
  • Ef Wd are the electric fields within the cube when illuminated from above with a plane wave
  • E adj are the electric fields within the cube when illuminated from below, step (73) with a point source at the target location.
  • the phase and amplitude of the point source are given by the electric field at the target location in the forward simulation.
  • the sensitivity may be calculated for multiple incident wavelengths and polarizations across the visible spectrum, assigning each spectral band to a different quadrant: red (600 nm - 700 nm) green (500 nm - 600 nm) and blue (400 nm - 500 nm).
  • the spectrally-averaged sensitivity is then used to update the refractive index of the device, step (74), using the following formula:
  • the sensitivity is recalculated after each update. After several iterations, the algorithm converges to the optimized design, step (75), wherein the resulting structure focuses incident light with the desired efficiency.
  • Fig. 4A shows a 3D scattering structure (410) made of a dielectric, the 3D structure (410) comprising a wire network (415) embedded inside the scattering structure (410).
  • the dielectric may be made of an oxide such as Si02 and the wire network (415) may be made of metal, e.g. copper.
  • voids may be formed within the 3D structure (410) by etching away the wire network (415) initially fabricated within the 3D scattering structure (410). In order to do this, making now reference to Figs.
  • vias (420) are etched in the dielectric to access ends of wires in the wire network (405) and then etching the wires away using a liquid etchant, in order to obtain voids (415’).
  • wire pitch will be referred to the minimum spacing two neighboring wires of a wire network within a 3D structure can be from each other. Also, there is a minimum wire feature size imposed by limitations of the fabrication process. Therefore, when forming voids within the 3D structure by etching out wires, the minimum wire pitch sets the minimum dielectric feature size and the minimum wire size sets the minimum void/air feature size. In what follows, exemplary steps of the methods in accordance with the teaching of the present disclosure to design the 3D scattering structure (410) while respecting manufacturing process constraints are described.
  • the design obtained by the free and continuous optimization may not be in-line with requirements imposed by constraints due to manufacturing.
  • the term “free optimization” refers to optimization methods wherein no fabrication constraints are imposed and the term “continuous optimization” refers to optimization methods wherein a specific fabrication constraint is lifted.
  • the refractive index can take any value within a set range, not just the extremes.
  • the disclosed methods address this issue by implementing a binarization of the refractive index followed by further optimization of the design using, for example, a gradient descent approach, while respecting the manufacturing requirements.
  • the term “binarization” refers to a fabrication constraint wherein only a handful of materials can be selected, so no continuous index distribution is allowed.
  • the CMOS technology imposes such a fabrication constraint.
  • an explicit representation of such a shape may be a series of points in a 2D plane that define the boundary of such shape.
  • the shape can be defined by just four points in the plane.
  • Another way of representing either specific shapes like rectangles or arbitrary shapes is to use an implicit representation.
  • the term “level set function” is referred to a function that is an implicit representation of a geometry.
  • a level set function may be defined as a function f(x, y), or in other words a surface in three dimensions.
  • the contour defined by f(x, y) constant (e.g., the constant is equal to 0) defines the boundary of the shape in two dimensions.
  • level set functions representing features with geometric shapes such as rectangle instead of free form shapes as allowed by the free, continuous optimization algorithm may be envisaged.
  • this approach will allow an optimized design while tight requirements imposed by the manufacturing process are met.
  • the gradient information from the continuous optimization method can then be mapped to perturbations of the level set function such that the boundary of the shape moves in a way to improve the design..
  • this boundary perturbation can be converted to a perturbation of the feature parameters, e g., in the case of a rectangle, a center point and two widths.
  • the example of features with rectangular shapes will be used to describe the teachings of the disclosure, keeping in mind that features with shapes other than rectangular may also be envisaged.
  • Fig. 5 shows a flowchart (500) describing various steps of the design process, in accordance with embodiments of the present disclosure.
  • an initial optimized design based on free/continuous optimization is provided (step 510). This design will essentially provide the refractive index distribution along horizontal directions in each layer and no manufacturing constraint is imposed when generating such initial design. Then for each layer, the following steps are taken:
  • a procedure is run to identify peaks in the void index distribution (step 520).
  • the minima found in this way represent void regions that may not necessarily be completely void according to the free/continuous optimization as previously described. In other words, some regions may represent local minima.
  • the identified regions are then ranked based on how close they are to being a void (step 530). This is performed using the outcome of the design based on the free/continuous optimization algorithm as described previously. In other words, void features are prioritized to be placed where they seem to be most desired by the free design.
  • each void is replaced with a rectangle that approximates the original index distribution (step 540).
  • the dimensions of the rectangle are chosen to maintain the same volume-averaged refractive index as the original distribution, providing a binary-index replacement. This is illustrated in Fig. 6 wherein an exemplary graph representing the index distribution vs. the horizontal position is shown.
  • the manufacturing (e.g. CMOS process) constraints are required to be met by each feature (steps 550-570).
  • the width of each feature is required to meet the minimum width requirement, which is set, as mentioned before, by the minimum wire size that is manufacturable.
  • the distances between centers of adjacent features are required to meet the manufacturing pitch requirement. Any feature not meeting any of such requirements may be ignored.
  • a level set function is created and assigned to each feature (step 580). As described later, the created level functions will be updated (step 580) to improve the performance of the binarized design.
  • the 3D structures may be designed based on specific shapes such as rectangular bars. As typical from designs using free/continuous optimization, such designs already provide improved overall performance compared to existing solutions. However, designing based on freeform shapes may still result in a better overall performance compared to those based on more specific features.
  • the gradient information can be used to iteratively update the design to further improve the overall performance. As illustrated by flowchart (500) of Fig.
  • step (580) the gradient information from the free/continuous optimization method can be mapped to perturbations of the width/center of all rectangular features used in the binarized design (step 580 of Fig. 5).
  • the gradient of the objective function with respect to the index distribution can be mapped to a perturbation of the boundaries via the Hamilton-Jacobi equation.
  • the inventors have noticed that, when adopting such an approach, and after several iterations, significant improvement over the already good performance of the binarized design will be obtained, while respecting at the same time the constraints imposed by the manufacturing process (e.g. CMOS process).
  • Figs. 7A-7C show performance results related to an exemplary 3D scattering structure optimized for single polarization and 3 color focus (e.g. red, green and blue).
  • a 2D approach as described before was used using 8 layers (450 nm/layer).
  • Fig. 7A shows the transmission spectra related to the design based on free/continuous optimization.
  • Graphs (701A, 702A, 703A) represent plots of transmission as a function of wavelength for colors (blue, green, red) respectively.
  • FIG. 7B shows the transmission spectra related to the binarized design.
  • Graphs (70 IB, 702B, 703B) represent plots of transmission as a function of wavelength for different focal regions. A degradation of the performance compared to the results obtained in the case of free optimization is noticed.
  • Fig. 7C shows the transmission spectra obtained after further optimizing the binarized design after the gradient information from the free/continuous optimization method is mapped to perturbations of the width/center of all of the rectangular features used in the binarized design.
  • Graphs (701C, 702C, 703C) represent plots of transmission as a function of wavelength for colors (blue, green, red) respectively. A significant improvement over the performance of the binarized design can be noticed.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Polarising Elements (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Optical Elements Other Than Lenses (AREA)
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PCT/US2019/057026 2019-10-18 2019-10-18 Cmos color image sensors with metamaterial color splitting WO2021076154A1 (en)

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KR1020227015534A KR20220083736A (ko) 2019-10-18 2019-10-18 메타물질 컬러 분할 기능을 구비한 cmos 컬러 이미지 센서들
JP2022515969A JP7503623B2 (ja) 2019-10-18 2019-10-18 3次元(3d)散乱構造体を構築するための方法
PCT/US2019/057026 WO2021076154A1 (en) 2019-10-18 2019-10-18 Cmos color image sensors with metamaterial color splitting
CN201980101356.5A CN114556166B (zh) 2019-10-18 2019-10-18 具有超材料分色的cmos彩色图像传感器

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KR20220083736A (ko) 2022-06-20

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