Classifications

• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09G—POLISHING COMPOSITIONS; SKI WAXES
  • C09G1/00—Polishing compositions
  • C09G1/02—Polishing compositions containing abrasives or grinding agents
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09G—POLISHING COMPOSITIONS; SKI WAXES
  • C09G1/00—Polishing compositions
  • C09G1/04—Aqueous dispersions
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
  • C09K3/00—Materials not provided for elsewhere
  • C09K3/14—Anti-slip materials; Abrasives
  • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
  • C09K3/1463—Aqueous liquid suspensions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
  • H10P52/40—Chemomechanical polishing [CMP]
  • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
  • H10P52/40—Chemomechanical polishing [CMP]
  • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W20/00—Interconnections in chips, wafers or substrates
  • H10W20/01—Manufacture or treatment
  • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
  • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W20/00—Interconnections in chips, wafers or substrates
  • H10W20/01—Manufacture or treatment
  • H10W20/071—Manufacture or treatment of dielectric parts thereof
  • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts

Definitions

• the present invention relates to barrier chemical mechanical planarization (“CMP”) polishing composition (or slurry) used in the production of a semiconductor device, and polishing methods for carrying out chemical mechanical planarization.
• CMP barrier chemical mechanical planarization
• barrier polishing compositions that are suitably used for polishing patterned semiconductor wafers that are composed of multi-type films, for instances, metal layer, a barrier film, and an underlying interlayer dielectric (ILD) structure or patterned dielectric layer.
• ILD interlayer dielectric
• a barrier layer covers the patterned dielectric layer and a metal layer covers the barrier layer.
• the metal layer has at least sufficient thickness to fill the patterned trenches with metal to form circuit interconnects.
• a barrier typically is a metal, metal alloy or intermetallic compound, examples are Ta or Ti containing film, such as TaN, Ti, TiN, or TiW, or et al.
• the barrier forms a layer that prevents migration or diffusion between layers within a wafer.
• barriers prevent the diffusion of interconnect metal such as copper, cobalt, or silver into an adjacent dielectric.
• Barrier materials must be resistant to corrosion by most acids, and thereby, resist dissolution in a fluid polishing composition for CMP.
• these barrier materials may exhibit a toughness that resists removal by abrasion abrasive particles in a CMP composition and from fixed abrasive pads.
• Step 1 of a typical CMP process a metal layer such as an overburdened copper layer is typically removed, while leaving a smooth planar surface on the wafer with metal-filled lines, vias and trenches that provide circuit interconnects planar to the polished surface.
• Step 1 tends to remove excess interconnect metals, such as copper or cobalt.
• step 2 of a typical CMP process follows to remove the barrier layer and excess metal layers and other films on the surface of the patterned wafers to achieve both local and global planarization of the surface on the dielectric layer.
• CMP Chemical mechanical planarization
• With-in die nonuniformity (WID-NU) is a global step height variation on pattern wafers, which could compromise the performance of the functional die. WID-NU is more pronounced where the initial difference in pattern density among various structures is more pronounced. [0009] Therefore, there is a need to make CMP slurries with higher removal rate, as well as improving the planarization such as better with-in-die non-uniformity (WID-NU), and that are more reliable, consistent, and uniform.
• the present invention provides stable CMP slurries with better with-die planarity. Described and disclosed herein are barrier CMP compositions, systems, and methods for polishing. The compositions disclosed herein provide improved, better with-in-die non uniformity (WID-NU).
• a barrier chemical mechanical planarization polishing composition comprising: abrasive; planarization agent; corrosion inhibitor; water soluble solvent; optionally wetting agent; rate boosting agent; pH adjusting agent; oxidizing agent; and chelator; wherein the polishing composition has a pH from about 2 to about 12, preferably about 3 to 12, more preferably about 7 to 12, most preferably about 8 to 12.
• the present invention provides a polishing method for chemical mechanical planarization of a semiconductor device comprising at least one surface having at least a barrier layer and a dielectric layer; the method comprising the steps of: a. contacting the at least one surface with a polishing pad; b. delivering to the at least one surface the polishing composition as described herein, and c.
• the barrier layer comprises tantalum or titanium containing films selected from the group consisting of tantalum, tantalum nitride, tantalum tungsten silicon carbide, titanium, titanium nitride, titanium-tungsten, titanium tungsten nitride, and combinations thereof; and the dielectric layer selected from the group consisting of oxide film, low-K material, and combinations thereof.
• the present invention provides a system for chemical mechanical planarization, comprising: a semiconductor device comprising at least one surface having at least a barrier layer and a dielectric layer; a polishing pad; and a polishing composition as described herein; wherein the barrier layer comprises tantalum or titanium containing films selected from the group consisting of tantalum, tantalum nitride, tantalum tungsten silicon carbide, titanium, titanium nitride, titanium-tungsten, titanium tungsten nitride, and combinations thereof; and the dielectric layer selected from the group consisting of oxide film, low-K material, and combinations thereof; and the at least one surface is in contact with the polishing pad and the polishing composition.
• the barrier layer comprises tantalum or titanium containing films selected from the group consisting of tantalum, tantalum nitride, tantalum tungsten silicon carbide, titanium, titanium nitride, titanium-tungsten, titanium tungsten nitride, and combinations thereof; and the dielectric layer selected from the
• Example of the abrasive includes but is not limited to colloidal silica, alumina, ceria, germania, silica, titania, zirconia, alumina doped colloidal silica, organic polymer particles, composite particles of inorganic and organic particles, surface modified inorganic/organic particles, and combinations thereof.
• the abrasive is used in an amount of 0.1 wt.% to about 25.0 wt.; 0.1 wt.% to 20.0 wt.%; 1 wt.% to 20.0 wt.%; 2.0 wt.% to 15.0 wt.%; or 3.0 wt.% to 15.0 wt.%; preferably 3 2.0 wt.%, more preferably 3 3.5 wt.%..
• Example of the planarization agent includes but is not limited to ethylene oxide, propylene oxide, butylene oxide, polymers thereof and derivatives thereof; and chemical mixture with these as a component.
• the polymers have a molecular weight between 10 to 5 million Dalton( Da), preferably 50 to 1 million Da.
• the planarization agent is used in an amount ranging from about 0.0001 wt.% to about 10.0 wt.%, 0.0005 wt. % to 5.0 wt.%, 0.0001 to 3.0 wt. %, or 0.005 wt.% to 2.0 wt.%.
• Example of planarization agent includes but is not limited to Ethanol, 2-[(1- dodecylcyclohexyl)oxy]-; Poly(oxy-1,2-ethanediyl), a-(1-nonyldecyl)-oo-hydroxy-; poly(oxy-1,2- ethanediyl), a-(1-decylcylclohexyl)-oo-hydroxy-; Ethanol, 2-(cyclotridecyloxy)-; poly(ethylene oxide) (Mw ranging from between 10 to 5 million DA, preferably 50 to 1 million DA); polypropylene oxide) (Mw ranging from between 10 to 5 million DA, preferably 50 to 1 million DA); TergitolTM 15s9; TergitolTM 15s7; SurfyolTM 485, SurfyolTM 465; ZetasperseTM 179; and combinations thereof.
• Ethanol 2-[(1- dodecylcycl
• Example of the corrosion inhibitor includes but is not limited to benzotriazole or benzotriazole derivatives, 3-amino-1, 2, 4-triazole, 3, 5-diamine-1, 2, 4-triazole, and combinations thereof; and in an amount ranging from about 0.0001 wt.% to about 2.0 wt.%; about 0.0005 wt.% to about 1.0 wt.%, or about 0.001 wt.% to about 0.5 wt.%.
• Example of the water soluble solvent includes but is not limited to Dl water, a polar solvent and a mixture of Dl water and polar solvent.
• the polar solvent can be any alcohol, ether, ketone, or other polar reagent.
• Examples of polar solvents include alcohols, such as isopropyl alcohol, ethers, such as tetrahydrofuran and diethylether, and ketones, such as acetone.
• Example of the wetting agent includes but is not limited to a) non-ionic surface wetting agents; b). anionic surface wetting agents; c). cationic surface wetting agents; d). ampholytic surface wetting agents; and combinations thereof; and in an amount ranging from about 0.0001 wt.% to about 10.0 wt.%; 0.001 wt.% to about 5.0 wt.%; 0.005 wt.% to 2.0 wt.%, or 0.001 wt.% to 1.0 wt.%.
• the rate boosting agents may include but are not limited to potassium silicate, sodium silicate, ammonium silicate, tetramethylammonium silicate, tetrabutylammonium silicate, tetraethylammonium silicate, and combinations thereof.
• the rate boosting agent is used in an amount ranging from about 0.001 wt.% to about 20.0 wt.%; 0.01 wt.% to about 15.0 wt.%, or 0.1 wt.% to about 10.0 wt.%.
• Example of the pH adjusting agent includes but is not limited to (a) nitric acid, sulfuric acid, tartaric acid, succinic acid, citric acid, malic acid, malonic acid, various fatty acids, various polycarboxylic acids and combinations thereof to lower pH of the polishing composition; and (b) potassium hydroxide, sodium hydroxide, ammonia, tetraethylammonium hydroxide, ethylenediamine, piperazine, polyethyleneimine, modified polyethyleneimine, and combinations thereof to raise pH of the polishing composition; and in an amount ranging from about 0.0001 wt.% to about 5.0 wt.%; 0.001 wt.% to about 3.0 wt.%; 0.01 wt.% to about 2.0 wt.%; and the polishing composition has a pH from about 2 to about 12, preferably about 3 to 12, more preferably about 7 to 12, most preferably about 8 to 12.
• Example of the oxidizing agent includes but is not limited to hydrogen peroxide, periodic acid, potassium iodate, potassium permanganate, ammonium persulfate, ammonium molybdate, ferric nitrate, nitric acid, potassium nitrate, ammonia, amine compounds, and combinations thereof; and in an amount ranging from about 0.05 wt.% to about 10.0 wt.%; preferably from about 0.2 wt.% to about 2.0 wt.%.
• Suitable chelator includes but is not limited to organic acids and their salts; polymeric acids and their salts; water-soluble copolymers and their salts; copolymers and their salts containing at least two different types of acid groups selected from carboxylic acid groups; sulfonic acid groups; phosphoric acids; and pyridine acids in the same molecule of a copolymer; polyvinyl acids and their salts; polyethylene oxide; polypropylene oxide; pyridine, pyridine derivatives, bipyridine, bipyridine derivatives, and combinations thereof.
• Example of the chelator includes but is not limited to potassium citrate, benzosulfonic acid, 4-tolyl sulfonic acid, 2,4-diamino-benzosulfonic acid, malonic acid, itaconic acid, malic acid, tartaric acid, citric acid, oxalic acid, gluconic acid, lactic acid, mandelic acid, amino acids, polycarboxy amino acids, phosphonic acids, salts thereof, and combinations thereof.
• the chelator is used in an amount ranging from about 0.001 wt.% to about 10.0 wt.%; preferably from about 0.05 wt.% to about 10.0 wt.%; preferably from about 0.05wt.% to about 5.0 wt.%; and more preferably 0.01 wt. % to 1.0 wt.%. [0029] All percentages are weight percentages relative to the total weight of the CMP composition unless otherwise indicated.
• the present invention provides stable CMP slurries with higher Barrier and ILD removal rates. Described and disclosed herein are barrier CMP compositions, systems and methods for polishing. The compositions disclosed herein boost the barrier film ad ILD removal rates.
• Described herein are stable CMP slurries polishing a semiconductor substrate or device having a conductive metal layer, an underlying barrier film, and a dielectric layer having imbedded metal interconnect structures.
• the conductive metal layer comprises such as Cu, CuMn, Co, CoMo, Al, AICo, Ru, RuTa, RuTiN, Mn, and combinations thereof.
• the barrier or liner layer comprises tantalum or titanium containing films selected from the group consisting of Ta, TaN, Ti, TiN, TiW or TiWN, and combinations thereof.
• the underlying interlayer dielectric (ILD) layer comprises oxide film such as Si02, TEOS; low-K dielectric material; and combinations thereof.
• the barrier chemical mechanical planarization polishing composition comprises: abrasive; planarization agent; corrosion inhibitor; water soluble solvent; optionally wetting agent; rate boosting agent; pH adjusting agent; oxidizing agent; and chelator; wherein the polishing composition has a pH from about 2 to about 12, preferably about 3 to 12, more preferably about 7 to 12, most preferably about 8 to 12
• the polishing compositions of the present invention comprise an abrasive.
• Suitable abrasives for polishing compositions are nano-sized particles include, but are not limited to, nano-sized colloidal silica or high purity colloidal silica particles; nano-sized inorganic metal oxide particles, such as alumina, titania, zirconia, ceria, and combinations thereof; nano-sized diamond particles; nano-sized silicon nitride particles; mono-modal, bi-modal, or multi-modal colloidal abrasive particles; organic polymer-based soft abrasives; surface-coated or modified abrasives; and combinations thereof.
• the surface-coated or modified abrasives include but are not limited to the colloidal silica particles doped by other metal oxide within lattice of the colloidal silica, such as alumina doped silica particles, colloidal aluminum oxide, which include alpha-, beta-, and gamma-types of aluminum oxides, colloidal and photoactive titanium dioxide, cerium oxide, colloidal cerium oxide, nano-sized diamond particles, nano-sized silicon nitride particles, mono-modal, bi-modal, multi-modal colloidal abrasive particles, zirconium oxide, organic polymer-based soft abrasives, surface-coated or modified abrasives, and mixtures thereof.
• colloidal silica particles doped by other metal oxide within lattice of the colloidal silica such as alumina doped silica particles, colloidal aluminum oxide, which include alpha-, beta-, and gamma-types of aluminum oxides, colloidal and photoactive titanium dioxide, cerium oxide, colloidal cerium
• the nano-sized particles have narrow or broad particle size distributions, various sizes and various shapes.
• the various shapes of the abrasives include spherical shape, cocoon shape, aggregate shape, and other shapes.
• the abrasive particles may be purified using a suitable method such as ion exchange to remove metal impurities that may help improve the colloidal stability.
• a suitable method such as ion exchange to remove metal impurities that may help improve the colloidal stability.
• high purity silica abrasive particles that are manufactured from precursors other than metal silicates can be used.
• Preferred abrasives include, but are not limited to, high purity colloidal silica (colloidal silica), alumina, ceria, germania, silica, titania, zirconia, alumina doped colloidal silica, and mixtures thereof. Colloidal silica is a most preferred abrasive particle.
• the silica can be any of precipitated silica, fumed silica, silica fumed, pyrogenic silica, silica doped with one or more adjutants, or any other silica-based compound.
• the silica can be produced, for example, by a process selected from the group consisting of a sol-gel process, a hydrothermal process, a plasma process, a fuming process, a precipitation process, and any combination thereof.
• the mean particle size of the abrasive as measured by Disc Centrifuge (DC) particle sizing method is between 10 nm and 300 nm, or more preferably between 20 nm and 200 nm, and even more preferably between 30 nm and 100 nm.
• abrasive particles may be used either alone or in combination with one another. Two or more abrasive particles with different sizes may also be combined to obtain excellent performance.
• the abrasive is present in the compositions of the present invention in an amount ranging from about 0.1 wt.% to about 25.0 wt.%; 0.1 wt.% to 20.0 wt.%; 1.0 wt.% to 20.0 wt.%; 2.0 wt.% to 15.0 wt.%; or 3.0 wt.% to 15.0 wt.%; preferably 3 2.0 wt.%, more preferably 3 3.5 wt.%.
• Example of the water soluble solvent includes but is not limited to Dl water, a polar solvent and a mixture of Dl water and polar solvent.
• the polar solvent can be any alcohol, ether, ketone, or other polar reagent.
• Examples of polar solvents include alcohols, such as isopropyl alcohol, ethers, such as tetrahydrofuran and diethylether, and ketones, such as acetone.
• Example of the planarization agent includes but is not limited to ethylene oxide, its derivatives, its polymers; propylene oxide, its derivatives, its polymers; butylene oxide, its derivatives, its polymers; and combinations thereof.
• the polymers have a molecular weight between 10 to 5 million Dalton (Da), preferably 50 to 1 million Da.
• the planarization agent is used in an amount ranging from about 0.0001 wt.% to about 10.0 wt.%, 0.0005 wt. % to 5.0 wt.%, 0.0001 to 3 wt. %, or 0.005 wt.% to 2.0 wt.%.
• Example of planarization agent includes but is not limited to Ethanol, 2-[(1- dodecylcyclohexyl)oxy]-; Poly(oxy-1,2-ethanediyl), a-(1-nonyldecyl)-oo-hydroxy-; poly(oxy-1,2- ethanediyl), a-(1-decylcylclohexyl)-oo-hydroxy-; cyclic oligosaccharides; Ethanol, 2- (cyclotridecyloxy)-; poly(ethylene oxide) (Mw ranging from between 10 to 5 million Da, preferably 50 to 1 million Da); polypropylene oxide) (Mw ranging from between 10 to 5 million Da, preferably 50 to 1 million Da); and combinations thereof.
• Ethanol 2-[(1- dodecylcyclohexyl)oxy]-
• Surfactants for example, TergitolTM 15s9 and TergitolTM 15s7 from Dow Chemical; Polysorbate 20 such as Tween ® 20 from BASF; Cyclodextrin, Pluronic ® F-108 from BASF; have the main active chemical secondary alcohol ethoxylate in the surfactants.
• Surfyol ® surfactants are surfactants from Evonik Industries.
• the active main chemical in the surfactants is polyethylene oxide.
• a surfactant can be used in the barrier CMP slurry as surface wetting agent; suitable wetting agent compounds that may be added to the barrier CMP slurry as surface wetting agent include, any of the numerous nonionic, anionic, cationic or amphoteric surfactants known to those skilled in the arts.
• suitable wetting agent compounds that may be added to the barrier CMP slurry as surface wetting agent include, any of the numerous nonionic, anionic, cationic or amphoteric surfactants known to those skilled in the arts.
• One example of the nonionic surfactant is tricosaethylene glycol dodecyl ether.
• wetting agent also include, but are not limited to, dodecyl sulfate sodium salt, sodium lauryl sulfate, dodecyl sulfate ammonium salt, secondary alkane sulfonates, alcohol ethoxylate, acetylenic surfactant, and any combination thereof.
• Ethoxylated acetylenic gemini surfactant DynolTM 607 and DynolTM 604 from Evonik are used as wetting agent.
• the amount of the wetting agent typically ranges from 0.0001 wt.% to about 10.0 wt.%; 0.001 wt.% to about 5.0 wt.%; 0.005 wt.% to 2.0 wt.%, or 0.001 wt.% to 1.0 wt.%.
• Example of the corrosion inhibitor includes but is not limited to benzotriazole or benzotriazole derivatives, 3-amino-1, 2, 4-triazole, 3, 5-diamine-1, 2, 4-triazole, and combinations thereof.
• the corrosion inhibitor is used in an amount ranging from about 0.0001 wt.% to about 2.0 wt.%; about 0.0005 wt.% to about 1. wt.%, or about 0.001 wt.% to about 0.5 wt.%.
• the rate boosting agents may include but are not limited to potassium silicate, sodium silicate, ammonium silicate, tetramethylammonium silicate, tetrabutylammonium silicate, tetraethylammonium silicate, and combinations thereof.
• the rate boosting agent is used in an amount ranging from about 0.001 wt.% to about 20.0 wt.%; 0.01 wt.% to about 15.0 wt.%, or 0.1 wt.% to about 10.0 wt.%.
• Example of the pH adjusting agent includes but is not limited to (a) nitric acid, sulfuric acid, tartaric acid, succinic acid, citric acid, malic acid, malonic acid, various fatty acids, various polycarboxylic acids and combinations thereof to lower pH of the polishing composition; and (b) potassium hydroxide, sodium hydroxide, ammonia, tetraethylammonium hydroxide, ethylenediamine, piperazine, polyethyleneimine, modified polyethyleneimine, and combinations thereof to raise pH of the polishing composition; and is used in an amount ranging from about 0.0001 wt.% to about 5.0 wt.%; 0.001 wt.% to about 3.0 wt.%; 0.01 wt.% to about 2.0 wt.%; and the polishing composition has a pH from about 2 to about 12, preferably about 3 to 12, more preferably about 7 to 12, most preferably about 8 to 12.
• Example of the oxidizing agent includes but is not limited to hydrogen peroxide, periodic acid, potassium iodate, potassium permanganate, ammonium persulfate, ammonium molybdate, ferric nitrate, nitric acid, potassium nitrate, ammonia, amine compounds, and combinations thereof.
• the oxidizing agent is used in an amount ranging from about 0.05 wt.% to about 10.0 wt.%; preferably from about 0.2 wt.% to about 2.0 wt.%.
• Suitable chelator includes but is not limited to organic acids and their salts; polymeric acids and their salts; water-soluble copolymers and their salts; copolymers and their salts containing at least two different types of acid groups selected from carboxylic acid groups; sulfonic acid groups; phosphoric acids; and pyridine acids in the same molecule of a copolymer; polyvinyl acids and their salts; polyethylene oxide; polypropylene oxide; pyridine, pyridine derivatives, bipyridine, bipyridine derivatives, and combinations thereof.
• Example of the chelator is selected from the group consisting of potassium citrate, benzosulfonic acid, 4-tolyl sulfonic acid, 2,4-diamino-benzosulfonic acid, malonic acid, itaconic acid, malic acid, tartaric acid, citric acid, oxalic acid, gluconic acid, lactic acid, mandelic acid, amino acids, polycarboxy amino acids, phosphonic acids and combinations thereof and salts thereof.
• the chelator is used in an amount ranging from about 0.001 wt.% to about 10.0 wt.%; preferably from about 0.05wt.% to about 5.0 wt.%; and more preferably 0.01 wt. % to 1.0 wt.%.
• the present invention also provides a polishing method for chemical mechanical planarization of a semiconductor device comprising at least one surface having at least a barrier layer and a dielectric layer; the method comprising the steps of: a. contacting the at least one surface with a polishing pad; b. delivering to the at least one surface the polishing composition as described herein, and c.
• the barrier layer comprises tantalum or titanium containing films selected from the group consisting of tantalum, tantalum nitride, tantalum tungsten silicon carbide, titanium, titanium nitride, titanium-tungsten, titanium tungsten nitride, and combinations thereof; and the dielectric layer selected from the group consisting of oxide film, low-K material, and combinations thereof.
• the present invention further provides a system for chemical mechanical planarization, comprising: a semiconductor device comprising at least one surface having at least a barrier layer and a dielectric layer; a polishing pad; and a polishing composition as described herein; wherein the barrier layer comprises tantalum or titanium containing films selected from the group consisting of tantalum, tantalum nitride, tantalum tungsten silicon carbide, titanium, titanium nitride, titanium-tungsten, titanium tungsten nitride, and combinations thereof; and the dielectric layer selected from the group consisting of oxide film, low-K material, and combinations thereof; and the at least one surface is in contact with the polishing pad and the polishing composition.
• the barrier layer comprises tantalum or titanium containing films selected from the group consisting of tantalum, tantalum nitride, tantalum tungsten silicon carbide, titanium, titanium nitride, titanium-tungsten, titanium tungsten nitride, and combinations thereof; and the dielectric layer selected from
• polishing was done on 300mm Reflection LK, Atec, 1.1 psi, 93RPM table speed, 300ml/min flow rate. Fujibo H800 pad. MIT layout Cu/TEOS patterm
• Dl Water was added to make the composition 100 wt. %.
• the pH of the slurries were around 10.
• the slurries were prepared at room temperature with a short break (several minutes) apart from each component. [0075] The slurries were used for polishing (at point of use) after 1.0 wt. % hydrogen peroxide was added to the slurries as an oxidizing agent.
• 10x10 pm is the feature on MIT layout Cu/TEOS pattern, 10 pm Cu by 10 pm TEOS.
• Dl Water was added to make the composition 100 wt. %.
• the pH of the slurries were around 10.
• the slurries were used for polishing after 1.0 wt. % hydrogen peroxide was added to the slurries as an oxidizing agent.
• 10x10 pm is the feature on MIT layout Cu/TEOS pattern, 10 pm Cu by 10 pm TEOS.
• Example 2 has demonstrated that the addition of a planarization agent can improve the with-die planarity.
• the slurries were used for polishing after 1.0 wt. % hydrogen peroxide was added to the slurries as an oxidizing agent.
• 10x10 pm is the feature on MIT layout Cu/TEOS pattern, 10 pm Cu by 10 pm TEOS.
• Example 3 has demonstrated that the addition of a planarization agent can improve the with-die planarity.
• a Quartz Crystal Microbalance was used to measure molecular adsorption to characterize the difference between wetting agent and planarization agent.
• the sensor used in this experiment was QSX 303 Si02 with 14mm diameter of oxide with gold electrode on both sides.
• the experiment was set to run at a total time of 30 minutes(mins).
• the pump was set to run at 1ml/min flow rate.
• Dl water was set to pass the sensor for the very first 2 mins before chemicals passing the sensor at the same rate for 5 mins, then Dl water was set to pass the sensor for the rest of the experiment.
• the fast adsorption provides protection to the exposed dielectric surfaces, reducing the erosion of those areas, especially the high-density copper areas (i.e. 9x1 pm). Reducing erosion subsequently improves WID-NU.
• Chemical B was used as a planarization agent.
• QCM Quartz Crystal Microbalance
• the sensor used in this experiment was QSX 303 Si02 with 14mm diameter of oxide with gold electrode on both sides.
• the experiment was set to run at a total of 20mins.
• the pump was set to run at 1ml/min flow rate.
• Dl water was set to pass the sensor for the very first 2 mins before chemicals passing the sensor at the same rate for 5mins, then Dl water was set to pass the sensor for the rest of the experiment
• the fast adsorption provides protection to the exposed dielectric surfaces, reducing the erosion of those areas, especially the high-density copper areas (i.e. 9x1 pm). Reducing erosion subsequently improves WID-NU.

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