WO2021057072A1

WO2021057072A1 - 5g high-frequency-ratio antenna with high harmonic suppression

Info

Publication number: WO2021057072A1
Application number: PCT/CN2020/093912
Authority: WO
Inventors: 涂治红; 聂娜
Original assignee: 华南理工大学
Priority date: 2019-09-29
Filing date: 2020-06-02
Publication date: 2021-04-01
Also published as: CN110600870B; JP7031909B2; JP2022511178A; CN110600870A

Abstract

Disclosed are a 5G high-frequency-ratio antenna with high harmonic suppression, comprising a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a millimeter wave patch array, a short-circuit column, a microstrip connection line, a metal floor, a dumbbell-shaped gap, a T-shaped branch knot, parasitic patches, a feeder line, and two pairs of open-circuit lines of different lengths. The millimeter wave patch array is located on the upper surface of the first dielectric substrate; the microstrip connection line is located on the lower surface of the first dielectric substrate; the short-circuit column passes through the first dielectric substrate and connects the millimeter wave patch array and the microstrip connection line; the metal floor is located on the upper surface of the third dielectric substrate; the dumbbell-shaped gap is obtained by means of etching the metal floor; the T-shaped branch knot is connected to the dumbbell-shaped gap; two parasitic patches are located in slots at two ends of the dumbbell-shaped gap; and the feeder line and the two pairs of open-circuit lines are located on the lower surface of the third dielectric substrate. The present invention has high harmonic suppression, and achieves multiplexing of a microwave radiation structure with millimeter waves as a feed structure, which can be respectively applied to a microwave frequency band of 4.8 GHz to 5 GHz and a millimeter wave frequency band of 26 GHz/28 GHz of a 5G system.

Description

A 5G high frequency ratio antenna with high harmonic suppression

Technical field

The present invention relates to the technical field of wireless communication, in particular to a 5G high frequency ratio antenna with high harmonic suppression.

Background technique

The rapid development of wireless communication technology has caused various electronic devices to develop in the direction of miniaturization and multi-function, and the antenna, as a wireless communication technology bridge and air interface, will inevitably develop in this direction. The traditional single-frequency antenna has a single frequency band and does not have the function of harmonic suppression, so that the RF front-end usually needs to add a filter to meet practical requirements; therefore, dual-frequency antennas with harmonic suppression have been developed. However, the general microwave band dual-frequency antenna cannot meet the rapidly developing millimeter wave technology. Therefore, the study of dual-frequency antennas with large frequency ratios has become an important topic.

With the development of broadband communication network technology, especially the rapid development of the 5G communication process, application to the millimeter wave frequency band is a development trend. However, the current dual-frequency large frequency ratio antenna does not have the characteristics of harmonic suppression. This is not ideal for the popularization and utilization of antennas.

technical problem

The purpose of the present invention is to overcome the shortcomings and deficiencies of the prior art, and propose a 5G high frequency ratio antenna with high harmonic suppression. The antenna has a compact structure, realizes structural multiplexing, and can be applied to the microwave range from 4.8 GHz to 5 GHz. And in the 5G wireless communication system in the 26GHz/28GHz range of the millimeter wave band.

Technical solutions

In order to achieve the above objective, the technical solution provided by the present invention is: a 5G high frequency ratio antenna with high harmonic suppression, including a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a millimeter wave patch array, Short-circuit pillar, microstrip connection line, metal floor, dumbbell-shaped gap, T-shaped stub, parasitic patch, feeder line and two pairs of open paths of different lengths; the first dielectric substrate, the second dielectric substrate, and the third dielectric substrate Stacked together, the second dielectric substrate is located between the first dielectric substrate and the third dielectric substrate, and is used to separate the first dielectric substrate and the third dielectric substrate; the millimeter wave patch array is provided on the first dielectric substrate The upper surface of the microstrip connection line is provided on the lower surface of the first dielectric substrate; the number of short-circuit posts is consistent with the number of millimeter-wave patches in the millimeter-wave patch array, and one short-circuit post corresponds to one millimeter wave Patch, the short-circuit post passes through the first dielectric substrate to connect the millimeter wave patch array with the microstrip connection line; the metal floor is set on the upper surface of the third dielectric substrate, and the dumbbell-shaped gap is carved from the metal floor The dumbbell-shaped slot can be used as a radiating structure in the microwave frequency band, and can be used as a feeding structure in the millimeter wave frequency band; the T-shaped branch and the dumbbell-shaped slot are connected; the parasitic patch has two separate settings In the slots at both ends of the dumbbell-shaped slot; the feeder line and two pairs of openings of different lengths are respectively arranged on the lower surface of the third dielectric substrate, and a short opening is symmetrically distributed on the left and right sides of the feeder Route and a long open route, the short open route and the long open route are parallel to each other with the feeder line, the short open route is located between the long open route and the feeder line, the millimeter wave patch array is in the feeder line The axis of symmetry is divided into two parts with left-right mirror symmetry. The dumbbell-shaped slot and the feeder are perpendicular to each other, and the two ends of the dumbbell-shaped slot, the two parasitic patches and the transverse part of the T-shaped branch are all symmetrical with the feeder It is mirror-symmetrical left and right.

Further, the number of the millimeter wave patches is 4 to the nth power, and n is a natural number that is not zero.

Beneficial effect

Compared with the prior art, the present invention has the following advantages and beneficial effects:

1. The antenna of the present invention does not require a complicated filter structure, and achieves better harmonic suppression characteristics.

2. The dumbbell-shaped slot of the antenna of the present invention is used as a radiating structure in the microwave frequency band, and as a feeding structure in the millimeter wave frequency band, realizing the multiplexing of the structure.

3. The antenna of the present invention does not require a complicated structure for isolating microwave signals, and can achieve radiation characteristics in microwave and millimeter wave frequency bands.

4. The simulation result of the return loss from the input port of the antenna of the present invention shows that its frequency band can simultaneously meet the requirements of 5G wireless communication systems in the microwave range of 4.8 GHz to 5 GHz and the millimeter wave range of 26 GHz/28 GHz.

5. The antenna of the present invention has the advantages of low profile and compact structure, is suitable for engineering applications, and solves the problems of complex structure, large volume, and narrow bandwidth of large frequency antennas in the prior art.

Description of the drawings

Fig. 1 is a perspective view of a 5G high frequency ratio antenna with high harmonic suppression according to an embodiment of the present invention.

Fig. 2 is a front view of a 5G high frequency ratio antenna with high harmonic suppression according to an embodiment of the present invention.

FIG. 3 is a top view of a first dielectric substrate according to an embodiment of the present invention.

Fig. 4 is a bottom view of a first dielectric substrate according to an embodiment of the present invention.

Fig. 5 is a perspective view of a second dielectric substrate according to an embodiment of the present invention.

FIG. 6 is a top view of a third dielectric substrate according to an embodiment of the present invention.

Fig. 7 is a bottom view of a third dielectric substrate according to an embodiment of the present invention.

_{Fig. 8 is a graph of simulation results of |S 11} | and gain parameters of a 5G high frequency ratio antenna with high harmonic suppression according to an embodiment of the present invention, the black solid line is the _{simulation curve of |S 11} |, and the gray dashed line is the gain Simulation curve.

Fig. 9 is a main plane radiation pattern of a 5G high frequency ratio antenna with high harmonic suppression in a microwave range of 5 GHz according to an embodiment of the present invention.

FIG. 10 is a main plane radiation pattern of a 5G high frequency ratio antenna with high harmonic suppression at 26.5 GHz in the millimeter wave band according to an embodiment of the present invention.

Embodiments of the present invention

The present invention will be further described below in conjunction with specific embodiments.

As shown in Figures 1 to 7, the 5G high frequency ratio antenna with high harmonic suppression provided by this embodiment includes a first dielectric substrate 1, a second dielectric substrate 2, a third dielectric substrate 3, and a millimeter wave patch Array, short-circuit column 9, microstrip connection line 8, metal floor 7, dumbbell-shaped gap 12, T-shaped stub 13, parasitic patch 11, feeder 6 and two pairs of open paths 4 and 5 of different lengths; the first The dielectric substrate 1, the second dielectric substrate 2, and the third dielectric substrate 3 are stacked together. The second dielectric substrate 2 is located between the first dielectric substrate 1 and the third dielectric substrate 3 and is used to separate the first dielectric substrate 1 And the third dielectric substrate 3; the millimeter-wave patch array is set on the upper surface of the first dielectric substrate 1, and consists of 4 n-th millimeter-wave patches 10, where n is a natural number that is not 0, and in this There are eight millimeter wave patches 10 in the embodiment, and the eight millimeter wave patches 10 in the figure are divided into two symmetrical rows, that is, four in a row; the microstrip connecting line 8 has a pair (ie, two Bar) set on the lower surface of the first dielectric substrate 1; the number of the short-circuit posts 9 should be the same as the number of the millimeter-wave patches 10 in the millimeter-wave patch array, and one short-circuit post 9 corresponds to one millimeter-wave patch 10 Since there are eight millimeter wave patches 10 in this embodiment, there are also eight short-circuit posts 9 which pass through the first dielectric substrate 1 to connect the eight millimeter-wave patches 10 to a pair of microstrips. The wire 8 is connected, specifically a row of millimeter wave patches connected to a microstrip connecting wire 8; the metal floor 7 is provided on the upper surface of the third dielectric substrate 3, and the dumbbell-shaped gap 12 is etched from the metal floor 7 , Wherein the dumbbell-shaped slot 12 can be used as a radiating structure in the microwave frequency band, and can be used as a feeding structure in the millimeter wave frequency band; the T-shaped branch 13 and the dumbbell-shaped slot 12 are connected; the parasitic patch 11 has two They are respectively arranged in the slots at both ends of the dumbbell-shaped slot 12; the feeder wire 6 and two pairs of open paths 4, 5 of different lengths are respectively arranged on the lower surface of the third dielectric substrate 3, and on the left and right sides of the feeder 6 A short open route 5 and a long open route 4 are laterally symmetrically distributed. The short open route 5 and the long open route 4 are parallel to the feeder line 6, and the short open route 5 is located in the long open route 4 and Between the feeder lines 6, the two rows of millimeter wave patches are symmetrical about left and right with the feeder line 6 as the axis of symmetry. The dumbbell-shaped gap 12 and the feeder line 6 are perpendicular to each other, and two ends of the dumbbell-shaped gap 12 The lateral parts of the parasitic patch 11 and the T-shaped branch 13 are both left and right mirror symmetry with the feed line 6 as the symmetry axis.

After adjusting the size parameters of each part of the 5G high frequency ratio antenna with high harmonic suppression in this embodiment, through calculation and electromagnetic field simulation, the 5G high frequency ratio antenna of this embodiment was verified and simulated, as shown in FIG. 8 _{The curve of the simulation results of the |S 11} | (input port return loss) and gain (Gain) parameters of the antenna in the frequency range of 3GHz~29GHz is shown. There are two curves in the figure, and the black solid line is |S ₁₁ | Parameters, the gray dotted line is the gain simulation parameter; it can be seen that in the frequency range of 4.4GHz~5.46GHz, the value of the solid curve is less than -10dB, and the value of the dashed line is in the range of 3.2~4dB; in the range of 25.3GHz~28.5GHz , The value of the solid curve is less than -10dB, and the value of the dashed line is in the range of 13.65~15.56dB. The simulation results show that the 5G large-frequency antenna with high harmonic suppression in this embodiment has a wider bandwidth, good performance, and suppressed The frequency band within 6GHz~23GHz can meet the requirements of 5G wireless communication system applications in the range of 4.8GHz~5GHz and 26GHz/28GHz.

The radiation pattern of the HFSS simulation model of the 5G high frequency ratio antenna with high harmonic suppression in this embodiment at 5 GHz is shown in FIG. 9. The radiation pattern of the HFSS simulation model of the 5G high frequency ratio antenna with high harmonic suppression in this embodiment at 26.5 GHz is shown in FIG. 10.

In the foregoing embodiment, the first dielectric substrate 1, the second dielectric substrate 2, and the third dielectric substrate 3 are made of any one of FR-4, polyimide, polytetrafluoroethylene glass cloth and co-fired ceramics; The metal floor 7, a pair of parasitic patches 11, a feeder line 6, a pair of microstrip connecting lines 8, two split lines 4 and 5, the millimeter wave patch 10 uses aluminum, iron, tin, copper, Any one of silver, gold, and platinum, or an alloy of any one of aluminum, iron, tin, copper, silver, gold, and platinum.

The above are only preferred embodiments of the patent of the present invention, but the scope of protection of the patent of the present invention is not limited to this. Anyone familiar with the technical field within the scope disclosed in the patent of the present invention, according to the patent of the present invention The technical scheme and its inventive concept are equivalently replaced or changed, all belong to the protection scope of the patent of the present invention.

Claims

A 5G high frequency ratio antenna with high harmonic suppression, which is characterized in that it includes a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a millimeter wave patch array, a short-circuit column, a microstrip connection line, and a metal floor , Dumbbell-shaped gaps, T-shaped branches, parasitic patches, feeders, and two pairs of open paths of different lengths; the first dielectric substrate, the second dielectric substrate, and the third dielectric substrate are stacked together, and the second dielectric substrate Located between the first dielectric substrate and the third dielectric substrate for separating the first dielectric substrate and the third dielectric substrate; the millimeter wave patch array is provided on the upper surface of the first dielectric substrate; the microstrip connection line Set on the lower surface of the first dielectric substrate; the number of the short-circuit posts is consistent with the number of the millimeter-wave patches in the millimeter-wave patch array, and one short-circuit post corresponds to one millimeter-wave patch, and the short-circuit post passes through the first A dielectric substrate connects the millimeter wave patch array with the microstrip connection line; the metal floor is set on the upper surface of the third dielectric substrate, the dumbbell-shaped gap is etched from the metal floor, and the dumbbell-shaped gap is in the microwave The frequency band can be used as a radiating structure, while in the millimeter wave frequency band it can be used as a feeding structure; the T-shaped branch is connected with the dumbbell-shaped slot; the two parasitic patches are respectively set in the slots at both ends of the dumbbell-shaped slot; The feeder line and two pairs of open lines of different lengths are respectively arranged on the lower surface of the third dielectric substrate, and a short open line and a long open line are symmetrically distributed on the left and right sides of the feeder. The open route and the long open route are parallel to the feeder line, and the short open route is located between the long open route and the feeder line. The millimeter wave patch array is divided into two parts with the feeder line as a symmetry axis and is mirror-symmetrical. The dumbbell-shaped slot and the feeder are perpendicular to each other, and the two ends of the dumbbell-shaped slot, the two parasitic patches, and the transverse part of the T-shaped branch are all left and right mirror symmetry with the feeder as the axis of symmetry.
The 5G high frequency ratio antenna with high harmonic suppression according to claim 1, wherein the number of millimeter wave patches is 4 to the nth power, and n is a natural number that is not zero.