WO2021049111A1 - Terminal structure, package, and method for manufacturing terminal structure - Google Patents

Terminal structure, package, and method for manufacturing terminal structure Download PDF

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Publication number
WO2021049111A1
WO2021049111A1 PCT/JP2020/022506 JP2020022506W WO2021049111A1 WO 2021049111 A1 WO2021049111 A1 WO 2021049111A1 JP 2020022506 W JP2020022506 W JP 2020022506W WO 2021049111 A1 WO2021049111 A1 WO 2021049111A1
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WO
WIPO (PCT)
Prior art keywords
pad
terminal structure
green sheet
trench
main surface
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PCT/JP2020/022506
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French (fr)
Japanese (ja)
Inventor
正人 石▲崎▼
久保　昇
大西　篤
Original Assignee
Ｎｇｋエレクトロデバイス株式会社
日本碍子株式会社
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Application filed by Ｎｇｋエレクトロデバイス株式会社, 日本碍子株式会社 filed Critical Ｎｇｋエレクトロデバイス株式会社
Priority to JP2021545121A priority Critical patent/JP7235878B2/en
Priority to CN202080047546.6A priority patent/CN114080674A/en
Publication of WO2021049111A1 publication Critical patent/WO2021049111A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4885—Wire-like parts or pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/642—Capacitive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector

Definitions

  • the present invention relates to a terminal structure, a package, and a method for manufacturing a terminal structure, and more particularly to a terminal structure having a lead provided on a pad, a package having a terminal structure, and a method for manufacturing a terminal structure. ..
  • Patent Document 1 discloses a device storage package intended to improve the frequency characteristics in the high frequency band. This package has a recess between the lead terminal joined to the wiring conductor and the ground terminal joined to the ground layer. The recess makes it easier to arbitrarily set the capacitive coupling between the wiring conductor and the ground layer.
  • Patent Document 2 discloses a package for storing an optical semiconductor element. This package has lead terminals and metallized layers joined to each other by wax. As the package becomes smaller, the space for providing the metallized layer is reduced, and the bonding area between the metallized layer and the lead terminal is reduced. As a result, there is a concern that the bonding strength between the metallized layer and the lead terminal may deteriorate. Therefore, the lead terminal is joined to the metallized layer adhered to the inner surface of the groove.
  • a method for forming the metallized layer a method of applying a metal paste obtained by adding and mixing an organic solvent and a solvent to powder of W, Mo, Mn or the like to the inner surface of the groove with a brush is exemplified.
  • JP-A-2003-283033 it is necessary to form a metallized layer to which lead terminals are brazed on the inner surface of the groove.
  • uneven application is likely to occur, and as a result, the quality variation becomes large.
  • a more advanced coating process is required, and as a result, the labor for manufacturing is greatly increased.
  • the present invention has been made to solve the above problems, and an object of the present invention is to increase the bonding strength of leads without significantly increasing the labor for manufacturing while supporting a wide band. , Terminal structures, packages, and methods of manufacturing terminal structures.
  • the terminal structure of one embodiment has a substrate, a first pad, and a lead.
  • the substrate is made of an insulating ceramic and has a main surface provided with a trench, the trench including a flat surface connected to the main surface.
  • the first pad is provided on the main surface of the substrate and is made of metal. Leads are provided on the first pad so that they are electrically connected to the first pad.
  • the first pad has a side surface on the extrapolated surface of the flat surface of the trench. In at least one cross-sectional view perpendicular to the main surface of the substrate, the first pad has a first thickness at the midpoint in the direction parallel to the main surface and a second thickness on the side surface. The thickness condition that the second thickness is larger than half of the first thickness is satisfied.
  • the capacitive coupling between the wiring paths can be adjusted. This makes it possible to support a wider band.
  • the first pad by satisfying the above-mentioned thickness condition, it is possible to prevent the first pad from having an excessively small thickness on the side surface. This makes it difficult for the first pad to break near the side surface when a force is applied to the lead. Therefore, the bonding strength of the lead to the first pad can be increased.
  • the side surface of the first pad is on the extrapolated surface of the flat surface of the trench. Thereby, in the manufacture of the terminal structure, the side surface of the first pad can be formed in association with the step of forming the trench. Therefore, as described above, a side surface having a sufficient thickness can be formed without much labor during manufacturing. From the above, it is possible to increase the bonding strength of the reed without significantly increasing the labor for manufacturing while supporting the widening of the band.
  • FIG. 1 It is a top view which shows schematic structure of the high frequency module in Embodiment 1 of this invention. It is a top view which shows schematic structure of the package in Embodiment 1 of this invention. It is a circuit diagram which shows schematic structure of the terminal structure in Embodiment 1 of this invention. It is a schematic partial cross-sectional view along the line IV-IV of FIG. It is a schematic diagram which shows a part of the circuit of the terminal structure of FIG. 3 in the field of view parallel to the field of view of FIG. It is a partial plan view which shows roughly the structure of the terminal structure in Embodiment 1 of this invention. 6 is a schematic partial cross-sectional view taken along line VII-VII of FIG. FIG.
  • FIG. 6 is a schematic partial cross-sectional view taken along line VIII-VIII of FIG. It is a partial cross-sectional view which shows the structure of the comparative example 1 in the same field of view as FIG. It is a partial cross-sectional view which shows the structure of the comparative example 2 in the same field of view as FIG.
  • FIG. 5 is a partial cross-sectional view schematically showing a first modification of FIG. 7.
  • FIG. 5 is a partial cross-sectional view schematically showing a second modification of FIG. 7.
  • FIG. 5 is a schematic partial cross-sectional view taken along the line XVI-XVI of FIG. It is a partial plan view which shows roughly the structure of the terminal structure in Embodiment 4 of this invention.
  • FIG. 6 is a schematic partial cross-sectional view taken along line XVIII-XVIII of FIG. It is a partial plan view which shows roughly the 1st step of the manufacturing method of the terminal structure in Embodiment 5 of this invention.
  • FIG. 5 is a schematic partial cross-sectional view taken along the line XX-XX of FIG. FIG.
  • FIG. 5 is a partial cross-sectional view schematically showing a second step of the method for manufacturing a terminal structure according to a fifth embodiment of the present invention.
  • FIG. 5 is a partial cross-sectional view schematically showing a third step of the method for manufacturing a terminal structure according to a fifth embodiment of the present invention.
  • It is a schematic partial plan view which shows the modification of FIG.
  • FIG. 20 shows a modification of FIG. 20, and is a schematic partial cross-sectional view taken along the line XXIV-XXIV of FIG. 23.
  • It is a partial plan view which shows roughly the 1st step of the manufacturing method of the terminal structure in Embodiment 7 of this invention.
  • FIG. 6 is a schematic partial cross-sectional view taken along the line XXVII-XXVII of FIG.
  • FIG. 5 is a partial plan view schematically showing a second step of the method for manufacturing a terminal structure according to the seventh embodiment of the present invention.
  • FIG. 8 is a schematic partial cross-sectional view taken along the line XXIX-XXIX of FIG. 28.
  • FIG. 5 is a partial cross-sectional view schematically showing a third step of the method for manufacturing a terminal structure according to the seventh embodiment of the present invention. It is a schematic partial plan view which shows the modification of FIG. 26.
  • FIG. 27 shows a modification of FIG. 27, and is a schematic partial cross-sectional view taken along the line XXXII-XXXII of FIG. 31.
  • FIG. 1 is a plan view schematically showing the configuration of the high frequency module 701 according to the first embodiment.
  • the lid body 730 For the lid body 730, only the outer edge is shown by a chain double-dashed line for easy viewing.
  • FIG. 2 is a plan view schematically showing the configuration of the package 501 used to obtain the high frequency module 701.
  • the high frequency module 701 (FIG. 1) has a package 501 (FIG. 2), a lid 730, and an internal circuit 750.
  • the internal circuit 750 has an IC (integrated circuit) 751.
  • the IC751 may have a high operating frequency, specifically 55 GHz or higher.
  • the internal circuit 750 may further include an optical component 752, in which case the high frequency module 701 and the package 501 are an optical module and an optical package, respectively.
  • the optical component 752 is, for example, a laser diode.
  • Package 501 has a terminal structure 301 and a casing 530.
  • the casing 530 has a frame body 532 and a plate body 531 that supports the frame body 532.
  • the cavity CV is formed by surrounding the space on the plate body 531 with the frame body 532.
  • the lid 730 seals the cavity CV.
  • the internal circuit 750 is mounted in the cavity CV. If the package 501 is an optical package, the casing 530 is to provide a path to receive or send light from an optical fiber (not shown) located outside the package 501.
  • An opening 535 is provided in the frame body 532 of the above.
  • a tubular member for fixing the optical fiber may be attached to the opening 535.
  • a translucent material may be attached to the inside of the tubular member.
  • the terminal structure 301 is attached to the frame body 532.
  • the terminal structure 301 has a portion located inside the cavity CV and a portion located outside the cavity CV.
  • the terminal structure 301 constitutes an electrical path connecting the inside and the outside of the cavity CV.
  • the terminal structure 301 penetrates through the through hole TH provided in the frame body 532 of the casing 530.
  • the terminal structure 301 has a signal terminal 311, a signal terminal 312, a ground terminal 316 and a ground terminal 317 inside the cavity CV, and also has a signal lead 321 and a signal lead 322, a ground lead 326 and a ground lead 327 in the cavity. It is held outside the CV. Further, the terminal structure 301 has a signal terminal 311a, a signal terminal 312a, a ground terminal 316a and a ground terminal 317a inside the cavity CV, and also has a signal lead 321a, a signal lead 322a, a ground lead 326a and a ground lead 327a. It is provided outside the cavity CV.
  • FIG. 3 is a circuit diagram schematically showing the terminal structure 301.
  • the terminal structure 301 constitutes the differential line CA and the differential line CB.
  • the differential line CA includes a signal terminal 311, a signal terminal 312, a ground terminal 316, a ground terminal 317, a signal lead 321 and a signal lead 322, a ground lead 326, a ground lead 327, a signal line 331, a signal line 332, and a ground line 336. And has a ground wire 337.
  • the signal line 331 is a wiring between the signal terminal 311 and the signal lead 321.
  • the signal line 332 is a wiring between the signal terminal 312 and the signal lead 322.
  • the ground wire 336 is a wiring between the ground terminal 316 and the ground lead 326.
  • the ground wire 337 is a wiring between the ground terminal 317 and the ground lead 327.
  • the differential line CB includes a signal terminal 311a, a signal terminal 312a, a ground terminal 316a, a ground terminal 317a, a signal lead 321a, a signal lead 322a, a ground lead 326a, a ground lead 327a, a signal line 331a, a signal line 332a, and a ground. It has a wire 336a and a ground wire 337a.
  • the signal line 331a is a wiring between the signal terminal 311a and the signal lead 321a.
  • the signal line 332a is a wiring between the signal terminal 312a and the signal lead 322a.
  • the ground wire 336a is a wiring between the ground terminal 316a and the ground lead 326a.
  • the ground wire 337a is a wiring between the ground terminal 317a and the ground lead 327a.
  • the configuration of the differential line CB may be the same as the configuration of the differential line CA, only the differential line CA will be described in detail below.
  • the number of differential lines may be other than two.
  • a line different from the differential line may be configured.
  • ground is added to the name of a member that is assumed to have a ground potential (more generally, a reference potential) when the high-frequency module 701 is used. .. These members do not have to have different potentials and may be connected to each other. Specifically, the set of the ground wire 336 and the ground wire 337 may be integrated.
  • FIG. 4 is a schematic partial cross-sectional view taken along line IV-IV of FIG.
  • FIG. 5 is a diagram schematically showing a circuit composed of a signal terminal 311, a signal line 331, and a signal lead 321 in association with a field of view parallel to the field of view of FIG.
  • the signal line 331 is a wiring extending in the thickness direction (vertical direction in the drawing) and the in-plane direction (horizontal direction in the drawing) inside the terminal structure 301.
  • the circuit configured by and is almost the same.
  • FIG. 6 is a partial plan view schematically showing the configuration of the terminal structure 301 according to the first embodiment.
  • 7 and 8 are schematic partial cross-sectional views along lines VII-VII and VIII-VIII of FIG. 6, respectively. Note that in FIG. 6, the brazing filler metal 90 (FIGS. 7 and 8) is not shown in order to make the figure easier to see.
  • the line VII-VII (FIG. 6) is parallel to the edge ED and the line VIII-VIII (FIG. 6) is perpendicular to the edge ED.
  • the terminal structure 301 has a signal lead 321 and a signal lead 322, a grounding lead 326, and a grounding lead 327, and further includes a substrate 10, a signal pad 21 (first pad), and the like. It has a signal pad 22 (fourth pad), a ground pad 26 (second pad), a ground pad 27 (third pad), and a brazing material 90.
  • a plating film may be provided on the surfaces of the signal pad and the ground pad to improve the wettability of the brazing material. Further, a plating film for preventing oxidation may be provided on the surfaces of the signal reed, the ground reed, and the brazing material.
  • the substrate 10 is made of insulator ceramics.
  • the substrate 10 has a main surface MS (upper surface in FIG. 7).
  • the main surface MS includes a linear edge ED (FIG. 6).
  • the signal pad 21 and the signal pad 22 are for the signal line, and the ground pad 26 and the ground pad 27 are for the ground. Further, the terminal structure 301 may have a connection layer 25 that connects the ground pad 26 and the ground pad 27 to each other.
  • the signal pad 21, signal pad 22, ground pad 26, ground pad 27, and connection layer 25 are made of metal and are provided on the main surface MS of the substrate 10.
  • the signal pad 21 is arranged between the ground pad 26 and the ground pad 27.
  • the signal pad 22 is arranged between the signal pad 21 and the ground pad 27 on the main surface MS of the substrate 10.
  • a trench TR is provided on the main surface MS of the substrate 10.
  • the trench TR includes a flat surface FP connected to the main surface MS as its side wall.
  • the flat surface FP is substantially perpendicular to the main surface MS in the example shown in FIG.
  • the trench TR includes a portion between the signal pad 21 and the signal pad 22, a portion between the signal pad 21 and the ground pad 26, and a portion between the signal pad 22 and the ground pad 27.
  • the main surface MS has a portion on the edge ED whose both ends are partitioned by a trench TR at a trench spacing ST (FIG. 7).
  • At least a part of the inside of the trench TR is a region having a dielectric constant lower than the dielectric constant of the ceramic substrate.
  • the region may be filled with a substance, which may be a gas. Alternatively, the region may be in vacuum.
  • the trench preferably has a depth of 50 ⁇ m or more, and more preferably has the above-mentioned region over a depth of 50 ⁇ m or
  • the signal pad 21 has a side surface FS on the virtual extrapolation surface of the flat surface FP of the trench TR.
  • the signal pad 21 has a thickness T1 (thickness T1) at the midpoint in the lateral direction (direction parallel to the main surface MS). It has a first thickness) and has a thickness T2 (second thickness) on the side surface FS.
  • the thickness T1 is preferably 10 ⁇ m or more, and more preferably 25 ⁇ m or more.
  • the thickness T1 is preferably 100 ⁇ m or less. In the present embodiment, the thickness condition that the thickness T2 is larger than half of the thickness T1 is satisfied.
  • the thickness T2 is more preferably 70% or more of the thickness T1.
  • the lateral direction is a direction along the edge ED.
  • the signal pad 21 has side surface FSs satisfying this thickness condition at both ends in the lateral direction.
  • the thickness T1 is the dimension of the signal pad 21, and the electrode (not shown in the present embodiment) in the via hole connected to the signal pad 21 is ignored, and the brazing material 90 and the plating added to the signal pad 21 are ignored. The coating is also ignored.
  • the thickness of the signal pad 21 at a position 10 ⁇ m inside from the end of the signal pad 21 is larger than half of the thickness T1.
  • the lower surface of the signal pad 21 (the surface facing the substrate 10) is a flat surface having no corners.
  • the "flat surface” may include a portion having a slight curvature, mainly due to manufacturing reasons.
  • the "slight curvature” is, for example, a curvature with a radius of curvature of about the pad width WP or more, which will be described later.
  • the thickness of the signal pad 21 is the maximum value at an approximately central portion of the signal pad 21 (more generally, a portion away from both ends of the signal pad 21). And, from this part toward each of both ends, it is approximately constant or gradually decreases.
  • the minimum value of the thickness of the signal pad 21 is the thickness T2, and in that case, the thickness of the signal pad 21 is T2 or more and T1 or less. Further, in the cross-sectional view as shown in FIG. 7, the thickness of the signal pad 21 is preferably in the range of ⁇ 30% from the average value.
  • the side surface FS of the signal pad 21 extends to the edge ED (FIG. 6) in the present embodiment.
  • the cross-sectional view perpendicular to the main surface MS of the substrate 10 and including the edge ED is substantially the same as the cross-sectional view of FIG. 7, and thus the above-mentioned thickness conditions are satisfied in both cross sections.
  • the signal pad 21 has a pad width WP as a width dimension in the lateral direction (specifically, on the edge ED in the present embodiment).
  • the pad width WP is preferably 250 ⁇ m or more and 500 ⁇ m or less. Further, the pad width WP is larger than the width of the signal lead 321, and preferably the signal pad 21 has a margin of 100 ⁇ m or more on both sides of the signal lead 321. In this embodiment, it is preferable that the margins on both sides are substantially the same. In other words, in the lateral direction, it is preferable that the center of the signal lead 321 substantially coincides with the center of the signal pad 21.
  • the pad width WP is preferably 40% or more and 95% or less of the distance between the center of the signal pad 21 and the center of the signal pad 22 in the lateral direction.
  • the pad width WP is equal to the trench spacing ST (FIG. 7). It is preferable that the above-mentioned thickness condition is satisfied at least in any cross-sectional view perpendicular to the main surface MS of the substrate 10 and parallel to the edge ED and within 30% of the pad width WP from the edge ED. More preferably, the above-mentioned thickness condition is satisfied at least in any cross-sectional view perpendicular to the main surface MS of the substrate 10 and parallel to the edge ED and within 50% of the pad width WP from the edge ED.
  • the configuration of the signal pad 22 may be the same as the configuration of the signal pad 21 described above.
  • the ground pad 26 and the ground pad 27 may be separated from the trench TR, unlike the signal pad 21 and the signal pad 22.
  • the signal lead 321 is joined on the signal pad 21 by a brazing material 90 so as to be electrically connected to the signal pad 21.
  • the portion of the signal lead 321 joined to the signal pad 21 preferably extends along a direction perpendicular to the edge ED, in other words, a direction perpendicular to line VII-VII (FIG. 6).
  • the brazing material 90 is made of a material different from the material of the signal pad 21, and preferably has a melting point lower than the melting point of the signal pad 21, for example, a silver brazing material.
  • the signal lead 322 is joined on the signal pad 22 by a brazing material 90 so as to be electrically connected to the signal pad 22.
  • the ground lead 326 is joined on the ground pad 26 by a brazing material 90 so as to be electrically connected to the ground pad 26.
  • the ground lead 327 is joined on the ground pad 27 by a brazing material 90 so as to be electrically connected to the ground pad 27.
  • the width of the signal lead 321 (horizontal dimension in FIGS. 6 and 7) is, for example, 150 ⁇ m or more and 200 ⁇ m or less, and the width of the signal lead 322 may be the same.
  • the width of each of the ground lead 326 and the ground lead 327 may be larger than the width of the signal lead 321.
  • FIG. 9 is a partial cross-sectional view showing the configuration of the terminal structure 300A as Comparative Example 1 in the same field of view as in FIG.
  • the pad width WP of the signal pad 21 is smaller than the trench spacing ST, and the signal pad 21 is separated from the trench TR.
  • the thickness of both ends of the signal pad 21 is less than half of the thickness T1 at the midpoint in the lateral direction (direction parallel to the main surface MS), and is typically FIG. It is less than 1 ⁇ m in the vertical direction of.
  • Such a configuration is typical when the signal pad 21 away from the trench TR as described above is formed by screen printing. This is because in screen printing, the thickness tends to be considerably small at the edges of the pattern.
  • FIG. 10 is a partial cross-sectional view showing the configuration of the terminal structure 300B as Comparative Example 2 in the same field of view as in FIG.
  • the pad width WP of the signal pad 21 is substantially the same as the trench spacing ST. Therefore, the first reason described in relation to the terminal structure 300A as Comparative Example 1 does not correspond to the terminal structure 300B.
  • the signal pad 21 has a thickness T2 of substantially zero (for example, a thickness of less than 1 ⁇ m) on the extrapolated surface of the flat surface FP of the trench TR, and thus the second The reason also applies to the terminal structure 300B. Therefore, even in the terminal structure 300B, the signal pad 21 is easily destroyed. Further, it is difficult in manufacturing to accurately match the portion where the thickness of the signal pad 21 reaches substantially zero, such as the terminal structure 300B, with the side wall of the trench TR in the lateral direction.
  • the capacitive coupling between the wiring paths can be adjusted. This makes it possible to support a wider band.
  • the thickness condition thickness T2> thickness T1 / 2
  • the signal pad 21 is less likely to be destroyed in the vicinity of the side surface FS when a force is applied to the signal lead 321. Therefore, the bonding strength of the signal lead 321 can be increased.
  • the side surface FS of the signal pad 21 is on the extrapolation surface of the flat surface FP of the trench TR.
  • the side surface FS of the signal pad 21 can be formed in association with the step of forming the trench TR. Therefore, as described above, the side surface FS having a sufficient thickness can be formed without much labor during manufacturing. From the above, it is possible to increase the junction strength of the signal lead 321 while supporting a wide band without significantly increasing the labor for manufacturing.
  • the above-mentioned thickness condition is satisfied in the cross-sectional view including the edge ED, which is perpendicular to the main surface MS of the substrate 10.
  • the signal pad 21 is less likely to be destroyed near the edge ED of the substrate 10.
  • the above-mentioned thickness condition is at least perpendicular to the main surface MS of the substrate 10 and satisfied in any cross-sectional view within 30% of the pad width WP from the edge ED. As a result, when a force is applied to the signal lead 321 the signal pad 21 is less likely to be destroyed near the edge ED of the substrate 10.
  • the signal pad 21 for the signal line is arranged between the ground pad 26 for grounding and the ground pad 27. This prevents leakage of the electromagnetic field from the signal wiring including the signal pad 21. Therefore, it is possible to better cope with widening the bandwidth.
  • the trench TR includes a portion between the signal pad 21 and the signal pad 22, a portion between the signal pad 21 and the ground pad 26, and a portion between the signal pad 22 and the ground pad 27. This makes it possible to avoid excessive capacitive coupling between the signal line passing through the signal pad 21 and the signal line passing through the signal pad 22. Further, avoid excessive capacitive coupling between the signal line passing through the signal pad 21 and the grounding line passing through the grounding pad 26, and between the signal line passing through the signal pad 22 and the grounding line passing through the grounding pad 27. Can be done. Therefore, it is possible to better cope with widening the bandwidth.
  • FIG. 11 is a partial cross-sectional view schematically showing a terminal structure 302 as a first modification of FIG. 7.
  • the brazing material 90 extends onto the side surface FS of the signal pad 21. Also in this modification, almost the same effect as that of the first embodiment can be obtained.
  • FIG. 12 is a partial cross-sectional view schematically showing a terminal structure 303 as a second modification of FIG. 7.
  • the flat surface FP and the side surface FS are inclined at an angle AG from the surface perpendicular to the main surface MS.
  • the thickness T2 is defined as the dimension of the side surface FS along the thickness direction (vertical direction in FIG. 12). That is, the product of the length of the side surface FS along the flat surface FP and the cosAG is the thickness T2.
  • the angle AG is preferably less than 30 °.
  • the thickness of the signal pad 21 at a position 10 ⁇ m inside (close to the midpoint of 10 ⁇ m) from the end of the signal pad 21 (in the figure, the upper end of the side surface FS) is larger than half the thickness T1. large.
  • a signal pad 21 and a signal pad 22 as a pair of pads for the differential line CA are provided between the ground pad 26 and the ground pad 27.
  • a single line may be provided instead of the differential line, in which case the signal pad 22 and the signal lead 322 may be omitted.
  • the side surface FS of the signal pad 21 extends to the edge ED (FIG. 6), but as a modification, the side surface FS may not reach the edge ED.
  • the surfaces of the signal pad 21, the signal pad 22, the ground pad 26, and the ground pad 27 and the portion of the main surface MS of the substrate 10 on which these pads are not formed are the same. It is on a plane.
  • Such a form is typically produced by screen printing the paste layers to be the pads on the green sheet to be the substrate 10 and then pressing these paste layers into the green sheet before the firing step. Obtained by doing.
  • the surface of each pad may be raised from the portion of the main surface MS where these pads are not formed, and such a form is obtained by weakening or omitting the press.
  • such a form is obtained by performing the printing step of the paste layer to be each pad after the firing step of the substrate 10.
  • FIG. 13 is a partial plan view schematically showing the configuration of the terminal structure 304 according to the second embodiment.
  • the trench TR includes a portion between the connection layer 25 and the signal pad 21, and a portion between the connection layer 25 and the signal pad 22.
  • the signal pad 21 is completely surrounded by the edge ED and the trench TR on the main surface of the substrate 10.
  • the signal pad 21 has a quadrangular shape having one side formed of the edge ED and three sides formed of the trench TR.
  • the trench TR is not formed on the main surface of the substrate 10 in the diagonal region from the signal pad 21.
  • a trench TR may be formed on the main surface of the substrate 10 even in a region diagonally from the signal pad 21.
  • the trench TR includes a portion between the connection layer 25 and the signal pad 21, and a portion between the connection layer 25 and the signal pad 22. This makes it possible to avoid excessive capacitive coupling between the connection layer 25 having a ground potential and each of the signal line passing through the signal pad 21 and the signal line passing through the signal pad 22. Therefore, it is possible to better cope with widening the bandwidth.
  • the signal pad 21 is completely surrounded by the edge ED and the trench TR on the main surface MS. As a result, capacitive coupling is suppressed over the entire circumference of the signal pad 21. Therefore, the decrease in the characteristic impedance of the wiring passing through the signal pad 21 can be further suppressed.
  • FIG. 15 is a partial plan view schematically showing the configuration of the terminal structure 306 according to the third embodiment.
  • FIG. 16 is a schematic partial cross-sectional view taken along the line XVI-XVI of FIG.
  • the terminal structure 306 replaces the signal pad 21 and the signal pad 22 of the terminal structure 301 (FIGS. 6 and 7: Embodiment 1) with the signal pad 21A (first pad) and the signal pad 22A (fourth pad).
  • the trench TR includes a portion between the signal pad 21A and the signal pad 22A, but a portion between the signal pad 21A and the ground pad 26 and between the signal pad 22A and the ground pad 27. The part of is not included. Therefore, the main surface MS of the substrate 10 is flat between the signal pad 21A and the ground pad 26 and between the ground pad 27 and the signal pad 22A.
  • the signal pad 21A has only one end (in the figure, the right end in contact with the trench TR) in the lateral direction (specifically, the direction along the edge ED) in the first embodiment. It has a side surface FS that satisfies the above-mentioned thickness conditions (thickness T2> thickness T1 / 2). The thickness of the other end (left end in the figure) is less than half that of the thickness T1, and is typically less than 1 ⁇ m.
  • the signal pad 21A has a first region R1 between the signal lead 321 and the trench TR and a second region R1 separated from the first region R1 by the signal lead 321. Includes region R2.
  • the first region R1 has a minimum distance DT between the signal lead 321 and the trench TR along one virtual straight line (dimension line in FIG. 15).
  • the dimension DM of the second region R2 along this one virtual straight line is preferably larger than the minimum distance DT.
  • the center of the signal lead 321 is deviated from the center of the signal pad 21A, and the deviation is, for example, 10 ⁇ m or more and 25 ⁇ m or less.
  • the difference between the dimension DM and the minimum distance DT is, for example, 20 ⁇ m or more and 50 ⁇ m or less.
  • the configuration of the signal pad 22A may be the same as the configuration of the signal pad 21A described above. Specifically, the configuration of the signal pad 22A may be symmetrical with the configuration of the signal pad 21A described above in the lateral direction.
  • a side surface FS that satisfies the thickness condition described in the first embodiment is provided. As a result, an effect similar to the effect of the first embodiment can be obtained.
  • the second region R2 of the signal pad 21A becomes wider, so that the second region R2 of the signal pad 21A is less likely to be destroyed when a force is applied to the signal lead 321. ..
  • the first region R1 of the signal pad 21A is less likely to be destroyed because the above-mentioned thickness condition is satisfied. From the above, both the first region R1 and the second region R2 of the signal pad 21A are unlikely to be destroyed. Therefore, the bonding strength of the signal lead 321 to the signal pad 21A can be increased.
  • FIG. 17 is a partial plan view schematically showing the configuration of the terminal structure 307 according to the fourth embodiment.
  • FIG. 18 is a schematic partial cross-sectional view taken along line XVIII-XVIII of FIG.
  • the terminal structure 307 replaces the signal pad 21 and the signal pad 22 of the terminal structure 301 (FIGS. 6 and 7: 1) with a signal pad 21B (first pad) and a signal pad 22B (fourth pad).
  • the trench TR includes a portion between the signal pad 21B and the ground pad 26 and a portion between the signal pad 22B and the ground pad 27, but between the signal pad 21B and the signal pad 22B. The part of is not included. Therefore, the main surface MS of the substrate 10 is flat between the signal pad 21B and the signal pad 22B.
  • the signal pad 21B has only one end (in the figure, the left end in contact with the trench TR) in the lateral direction (specifically, the direction along the edge ED) in the first embodiment. It has a side surface FS that satisfies the above-mentioned thickness conditions (thickness T2> thickness T1 / 2). The thickness of the other end (right end in the figure) is less than half that of the thickness T1, and is typically less than 1 ⁇ m.
  • the signal pad 21B has a first region R1 between the signal lead 321 and the trench TR and a second region R1 separated from the first region R1 by the signal lead 321. Includes region R2.
  • the first region R1 has a minimum distance DT between the signal lead 321 and the trench TR along one virtual straight line (dimension line in FIG. 17).
  • the dimension DM of the second region R2 along this one virtual straight line is preferably larger than the minimum distance DT.
  • the configuration of the signal pad 22B may be the same as the configuration of the signal pad 21B described above. Specifically, the configuration of the signal pad 22B may be symmetrical with the configuration of the signal pad 21B described above in the lateral direction.
  • a side surface FS that satisfies the thickness condition described in the first embodiment is provided. As a result, an effect similar to the effect of the first embodiment can be obtained.
  • the second region R2 of the signal pad 21B becomes wider, so that the second region R2 of the signal pad 21B is less likely to be destroyed when a force is applied to the signal lead 321. ..
  • the first region R1 of the signal pad 21B is less likely to be destroyed because the above-mentioned thickness condition is satisfied. From the above, both the first region R1 and the second region R2 of the signal pad 21B are unlikely to be destroyed. Therefore, the bonding strength of the signal lead 321 to the signal pad 21B can be increased.
  • FIG. 19 is a partial plan view schematically showing the first step.
  • FIG. 20 is a schematic partial cross-sectional view taken along the line XX-XX of FIG. The alternate long and short dash line in the figure indicates a region that will be removed by laser processing described later.
  • the first green sheet 11G including the portion to be the base 10 is formed.
  • the first green sheet 11G has a first surface F1 and a second surface F2 opposite to the first surface F1.
  • a paste layer 20P including a portion to be a signal pad 21 and a signal pad 22 (FIGS. 6 and 7) is printed on the first surface F1 of the first green sheet 11G.
  • the paste layer 26P, the paste layer 27P, and the paste layer 25P which are the ground pad 26, the ground pad 27, and the connection layer 25 (FIGS. 6 and 7), are printed on the first surface F1 of the first green sheet 11G.
  • Printing may be performed using screen printing techniques.
  • a second green sheet 12G including a portion to be the substrate 10 is formed.
  • the laminated body 81 is formed by laminating the first green sheet 11G and the second green sheet 12G so that the second surface F2 of the first green sheet 11G and the second green sheet 12G face each other.
  • the number of the plurality of green sheets included in the laminated body 81 is arbitrary, and in FIG. 20, the third green sheet 13G is also laminated.
  • FIG. 21 is a partial cross-sectional view schematically showing the second step of the manufacturing method of the terminal structure 301 in the fifth embodiment.
  • a step of removing a part of the laminated body 81 by laser processing is performed.
  • a surface to be at least a part of the flat surface FP of the trench TR is formed on the first green sheet 11G.
  • the paste layer 20P is patterned into the paste layer 21P and the paste layer 22P which are the signal pad 21 and the signal pad 22, respectively.
  • a surface serving as a side surface FS of the signal pad 21 is formed on the paste layer 21P.
  • the laminate 81 is fired.
  • FIG. 22 is a partial cross-sectional view schematically showing the third step.
  • a fired body 89 is formed from the laminated body 81 (FIG. 21).
  • the substrate 10 is formed from the first green sheet 11G, the second green sheet 12G, and the third green sheet 13G.
  • a signal pad 21, a signal pad 22, a ground pad 26, a ground pad 27, and a connection layer 25 are formed from each of the paste layer 21P, the paste layer 22P, the paste layer 26P, the paste layer 27P, and the paste layer 25P.
  • a signal lead 321 is then mounted on the signal pad 21 using the brazing material 90 so as to be electrically connected to the signal pad 21. Also, other leads are attached in the same manner. From the above, the terminal structure 301 is obtained.
  • the bottom of the trench TR is shallower than the second surface F2, but the trench TR may be deeper than the second surface F2, and is located in, for example, the second green sheet 12G or the third green sheet 13G. You may.
  • the above-mentioned manufacturing method can be applied not only to the first embodiment but also to the second to fourth embodiments by adjusting the range of laser machining.
  • the trench TR is formed by laser processing after the laminated body 81 is formed.
  • the pattern of the trench TR can be arbitrarily selected.
  • the layout is such that a part of the main surface of the substrate 10 is totally surrounded by the edge ED and the trench TR, it can be adopted.
  • FIG. 23 is a schematic partial plan view showing a modification of FIG. 19.
  • FIG. 24 shows a modification of FIG. 20, and is a schematic partial cross-sectional view taken along the line XXIV-XXIV of FIG. 23.
  • the paste layer 21P and the paste layer 22P are printed instead of the paste layer 20P (FIGS. 19 and 20).
  • the first surface F1 (FIG. 24) has a region between the paste layer 21P and the paste layer 22P where the paste layer is not printed, and this region is removed by laser processing. By providing such a region, the consumption of the paste can be saved as compared with the case where the process of FIG. 20 is used. Especially when the paste contains a noble metal, this saving can greatly reduce the manufacturing cost.
  • FIG. 25 is a partial cross-sectional view schematically showing the configuration of the terminal structure 308 according to the sixth embodiment.
  • the terminal structure 308 has at least one wiring layer 30, and in the example shown in FIG. 25, it has a wiring layer 31 and a wiring layer 32.
  • the wiring layer 30 is provided in the substrate 10 apart from the main surface MS, and extends parallel to the main surface MS, in other words, laterally in FIG. 25.
  • the terminal structure 308 has an electrode 41 formed in the via hole for connection in the thickness direction between each of the signal pad 21 and the signal pad 22 and the wiring layer 30.
  • the terminal structure 308 has an electrode 42 formed in the via hole for connection between the wiring layer 31 and the wiring layer 32 in the thickness direction. As described in the first embodiment, the electrode 41 is ignored with respect to the definition of the thickness T1 (FIG. 7).
  • the paste layer to be the wiring layer 30 in the thickness direction is a green sheet. Placed in between. Assuming that the bottom of the trench TR must also be arranged between the green sheets, the position of the bottom of the trench TR in the thickness direction is included in the existence range of the wiring layer 30. In that case, the degree of freedom in adjusting the capacitive coupling by the trench TR is limited. In the present embodiment, the bottom of the trench TR may be detached from any of the wiring layers 30 in the thickness direction. This increases the degree of freedom in adjusting the capacitive coupling. Such an arrangement can be easily obtained, for example, by the manufacturing method described in the fifth embodiment. The depth of the bottom of the trench TR does not have to be uniform, and as shown in FIG. 25, the bottom TB1 and the bottom TB2 having different depths may be provided.
  • FIG. 26 is a partial plan view schematically showing the first step.
  • FIG. 27 is a schematic partial cross-sectional view taken along line XXVII-XXVII of FIG. The alternate long and short dash line in the figure indicates a region that will be removed by punching, which will be described later.
  • the first green sheet 11G including the portion to be the base 10 is formed.
  • the first green sheet 11G has a first surface F1 and a second surface F2 opposite to the first surface F1.
  • a paste layer 20P including a portion to be a signal pad 21 and a signal pad 22 (FIGS. 6 and 7) is printed on the first surface F1 of the first green sheet 11G.
  • the paste layer 26P, the paste layer 27P, and the paste layer 25P which are the ground pad 26, the ground pad 27, and the connection layer 25 (FIGS. 6 and 7), are printed on the first surface F1 of the first green sheet 11G.
  • Printing may be performed using screen printing techniques. By these printings, a composite layer 11C having a first green sheet 11G, a paste layer 20P, a paste layer 26P, a paste layer 27P and a paste layer 25P is formed.
  • FIG. 28 is a partial plan view schematically showing the second step.
  • FIG. 29 is a schematic partial cross-sectional view taken along line XXIX-XXIX of FIG. 28.
  • a step of removing a part of the composite layer 11C by punching is performed.
  • a surface to be at least a part of the flat surface FP of the trench TR is formed on the first green sheet 11G.
  • the paste layer 20P is patterned into the paste layer 21P and the paste layer 22P which are the signal pad 21 and the signal pad 22, respectively.
  • a surface serving as a side surface FS of the signal pad 21 is formed in the paste layer 21P.
  • FIG. 30 is a partial cross-sectional view schematically showing the third step.
  • a second green sheet 12G including a portion to be the substrate 10 is formed.
  • the laminated body 84 is formed by laminating the first green sheet 11G and the second green sheet 12G so that the second surface F2 and the second green sheet 12G of the first green sheet 11G face each other. Is formed.
  • the number of the plurality of green sheets included in the laminated body 84 is arbitrary, and in FIG. 30, the third green sheet 13G and the fourth green sheet 14G are also laminated. In the example shown in FIG.
  • the punched region of the first green sheet 11G is the trench TR, and the position of the bottom of the trench TR in the thickness direction is the second surface F2 of the first green sheet 11G. Corresponds to the position of.
  • the bottom of the trench TR can be positioned between the second green sheet 12G and the third green sheet 13G by punching the second green sheet 12G as well.
  • the laminated body 84 (FIG. 30) is fired.
  • the fired body 89 (FIG. 22) is obtained from the laminated body 84.
  • the substrate 10 is formed from the first green sheet 11G, the second green sheet 12G, the third green sheet 13G, and the fourth green sheet 14G.
  • a signal pad 21, a signal pad 22, a ground pad 26, a ground pad 27, and a connection layer 25 are formed from each of the paste layer 21P, the paste layer 22P, the paste layer 26P, the paste layer 27P, and the paste layer 25P.
  • a signal lead 321 is then mounted on the signal pad 21 using the brazing material 90 so as to be electrically connected to the signal pad 21. Also, other leads are attached in the same manner. From the above, the terminal structure 301 is obtained.
  • the trench TR of the substrate 10 can be formed by punching, which is a simple process.
  • the punching process is performed on the first green sheet 11G before the laminating step. Therefore, in the case of a layout such that a part of the main surface of the substrate 10 is totally surrounded by the edge ED and the trench TR as in the second embodiment (FIG. 13 or 14), the first green sheet 11G , The part enclosed in this way is separated from other parts. Therefore, the manufacturing method of the present embodiment is particularly suitable for obtaining the terminal structure described in the above-described first, third, and fourth embodiments.
  • FIG. 31 is a schematic partial plan view showing a modification of FIG. 26.
  • FIG. 32 shows a modification of FIG. 27, and is a schematic partial cross-sectional view taken along the line XXXII-XXXII of FIG. 31.
  • the paste layer 21P and the paste layer 22P are printed instead of the paste layer 20P (FIGS. 26 and 27).
  • the first surface F1 (FIG. 32) has a region between the paste layer 21P and the paste layer 22P where the paste layer is not printed, and this region is removed by punching. By providing such a region, the consumption of the paste can be saved as compared with the case where the step of FIG. 27 is used. Especially when the paste contains a noble metal, this saving can greatly reduce the manufacturing cost.
  • the shape of the signal pad is quadrangular has been described in each of the above embodiments, other shapes may be used.
  • the step of forming a trench by processing into a green sheet has been described, but as a modification, a fired body is formed by firing the green sheet before forming the trench. May be good. In that case, a signal pad is formed on the fired body, and then a trench is formed.
  • Comparative Example 1 Comparative Example 2 and Examples, the trench spacing ST was set to 0.45 mm in common.
  • the pad width WP was 0.38 mm in Comparative Example 1 and 0.45 mm in Comparative Example 2 and Examples.
  • the trench TR and the signal pad 21 were separated from each other by about several tens of ⁇ m in Comparative Example 1, slightly separated from each other (about several ⁇ m) in Comparative Example 2, and continuous with each other in Example.
  • the length of the signal pad 21 and the trench TR was set to 0.64 mm in common.
  • the width of the signal lead 321 (horizontal dimensions in FIGS. 7, 9 and 10) is commonly set to 0.2 mm, and the thickness of the signal lead 321 (longitudinal dimensions in FIGS. 7, 9 and 10). ) was set to 0.15 mm in common.
  • the length of the portion of the signal lead 321 joined to the signal pad 21 was set to 0.58 mm in common.
  • the thickness T1 at the center of the pad was 36 ⁇ m
  • the thickness T2 at the side surface of the pad was 28 ⁇ m. Therefore, the thickness T2 on the side surface of the pad was about 78% of the thickness T1 at the center of the pad, which was larger than half of the thickness T1.
  • an external force F was applied to the tip of the signal lead 321 along the thickness direction of the terminal structure.
  • the signal lead 321 was plastically deformed as shown by the alternate long and short dash line in FIG. 8 before applying the external force F.
  • the bonding strength of the signal lead 321 was measured by the external force F required to peel off the signal lead 321 of each sample. Then, the average value and the minimum value between the samples were calculated for each of Comparative Example 1, Comparative Example 2, and Example.
  • Comparative Example 1 had the lowest joint strength. As the first reason, it is presumed that since the pad width WP is small, the stress applied per unit area of the signal pad 21 tends to be large. The second reason is that since both ends of the signal pad 21 are thin, stress relaxation at both ends is difficult to work, and as a result, it is presumed that the end of the signal pad 21 is likely to be the starting point of fracture. In Comparative Example 2, since the pad width WP of the signal pad 21 is almost the same as the trench spacing ST, the first reason is not applicable, and it is presumed that the joint strength is slightly improved. In the examples, not only the first reason but also the second reason does not apply, so it is presumed that the joint strength was larger than that of Comparative Examples 1 and 2.

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Abstract

A substrate (10) is composed of insulating ceramics and has a major surface (MS) provided with a trench (TR), wherein the trench (TR) includes a flat surface (FP) continuous with the major surface (MS). A first pad (21) is provided on the major surface (MS) of the substrate (10), and is composed of metal. A lead (321) is provided on the first pad (21) so as to be electrically connected to the first pad (21). The first pad (21) has a side surface (FS) on an extrapolated surface of the flat surface (FP) of the trench (TR). In at least one cross-sectional view taken perpendicular to the major surface (MS) of the substrate (10), the first pad (21) has a first thickness (T1) at a central point in a direction parallel to the major surface (MS), and has a second thickness (T2) at the side surface (FS), wherein a thickness condition that the second thickness (T2) be greater than half the first thickness (T1) is satisfied.

Description

端子構造、パッケージ、および、端子構造の製造方法Terminal structure, packaging, and manufacturing method of terminal structure
　本発明は、端子構造、パッケージ、および、端子構造の製造方法に関し、特に、パッド上に設けられたリードを有する端子構造と、端子構造を有するパッケージと、端子構造の製造方法とに関するものである。 The present invention relates to a terminal structure, a package, and a method for manufacturing a terminal structure, and more particularly to a terminal structure having a lead provided on a pad, a package having a terminal structure, and a method for manufacturing a terminal structure. ..
　国際公開第２０１４／１９２６８７号（特許文献１）は、高周波帯での周波数特性を良好にすることを意図した素子収納用パッケージを開示している。このパッケージは、配線導体に接合されたリード端子と、グランド層に接合されたグランド端子との間に凹部を有している。凹部により、配線導体とグランド層との間の容量結合を任意に設定しやすくなる。 International Publication No. 2014/192687 (Patent Document 1) discloses a device storage package intended to improve the frequency characteristics in the high frequency band. This package has a recess between the lead terminal joined to the wiring conductor and the ground terminal joined to the ground layer. The recess makes it easier to arbitrarily set the capacitive coupling between the wiring conductor and the ground layer.
　特開２００３－２８３０３３号公報（特許文献２）は光半導体素子収納用パッケージを開示している。このパッケージは、互いにろう材によって接合されたリード端子およびメタライズ層を有している。パッケージが小型化されることにともなって、メタライズ層を設けるための場所が減り、メタライズ層とリード端子との接合面積が小さくなる。その結果、メタライズ層とリード端子との接合強度の劣化が懸念される。そこでリード端子は、溝の内面に被着されたメタライズ層に接合されている。メタライズ層を形成する方法としては、Ｗ，Ｍｏ，Ｍｎ等の粉末に有機溶剤，溶媒を添加混合して得た金属ペーストを、溝の内面に筆で塗布する方法が例示されている。 Japanese Unexamined Patent Publication No. 2003-283033 (Patent Document 2) discloses a package for storing an optical semiconductor element. This package has lead terminals and metallized layers joined to each other by wax. As the package becomes smaller, the space for providing the metallized layer is reduced, and the bonding area between the metallized layer and the lead terminal is reduced. As a result, there is a concern that the bonding strength between the metallized layer and the lead terminal may deteriorate. Therefore, the lead terminal is joined to the metallized layer adhered to the inner surface of the groove. As a method for forming the metallized layer, a method of applying a metal paste obtained by adding and mixing an organic solvent and a solvent to powder of W, Mo, Mn or the like to the inner surface of the groove with a brush is exemplified.
国際公開第２０１４／１９２６８７号International Publication No. 2014/192687 特開２００３－２８３０３３号公報Japanese Unexamined Patent Publication No. 2003-283033
　国際公開第２０１４／１９２６８７号の技術は、高周波帯での周波数特性の向上、言い換えれば広帯域化、に有用である。一方でこの技術においては、特開２００３－２８３０３３号公報において指摘されているように、リード端子の接合強度の不足が懸念される。 The technology of International Publication No. 2014/192687 is useful for improving the frequency characteristics in the high frequency band, in other words, widening the bandwidth. On the other hand, in this technique, as pointed out in Japanese Patent Application Laid-Open No. 2003-283033, there is a concern that the bonding strength of the lead terminal is insufficient.
　特開２００３－２８３０３３号公報の技術によると、リード端子がろう付けされるメタライズ層を、溝の内面に形成する必要がある。この方法として例示されている筆での塗布では、塗布むらが生じやすく、その結果、品質ばらつきが大きくなる。塗布むらを抑制するためには、より高度な塗布工程を必要とし、その結果、製造のための労力が大きく増大してしまう。 According to the technique of JP-A-2003-283033, it is necessary to form a metallized layer to which lead terminals are brazed on the inner surface of the groove. In the application with a brush exemplified as this method, uneven application is likely to occur, and as a result, the quality variation becomes large. In order to suppress coating unevenness, a more advanced coating process is required, and as a result, the labor for manufacturing is greatly increased.
　本発明は以上のような課題を解決するためになされたものであり、その目的は、広帯域化に対応しつつ、製造のための労力を大きく増大させることなくリードの接合強度を高めることができる、端子構造、パッケージ、および、端子構造の製造方法を提供することである。 The present invention has been made to solve the above problems, and an object of the present invention is to increase the bonding strength of leads without significantly increasing the labor for manufacturing while supporting a wide band. , Terminal structures, packages, and methods of manufacturing terminal structures.
　一実施の形態の端子構造は、基体と、第１パッドと、リードとを有している。基体は、絶縁体セラミックスからなり、トレンチが設けられた主面を有しており、トレンチは、主面につながる平坦面を含む。第１パッドは、基体の主面上に設けられており、金属からなる。リードは、第１パッドに電気的に接続されるように第１パッド上に設けられている。第１パッドはトレンチの平坦面の外挿面上に側面を有している。基体の主面に垂直な少なくとも一の断面視において、第１パッドは、主面に平行な方向における中点で第１厚みを有しており、かつ側面で第２厚みを有しており、第２厚みが第１厚みの半分よりも大きいという厚み条件が満たされている。 The terminal structure of one embodiment has a substrate, a first pad, and a lead. The substrate is made of an insulating ceramic and has a main surface provided with a trench, the trench including a flat surface connected to the main surface. The first pad is provided on the main surface of the substrate and is made of metal. Leads are provided on the first pad so that they are electrically connected to the first pad. The first pad has a side surface on the extrapolated surface of the flat surface of the trench. In at least one cross-sectional view perpendicular to the main surface of the substrate, the first pad has a first thickness at the midpoint in the direction parallel to the main surface and a second thickness on the side surface. The thickness condition that the second thickness is larger than half of the first thickness is satisfied.
　一実施の形態によれば、第１に、基体の主面にトレンチが設けられることによって、配線経路間の容量結合を調整することができる。これにより広帯域化に対応することができる。第２に、前述した厚み条件が満たされることによって、第１パッドが側面で過度に小さな厚みを有することが避けられる。これにより、リードに力が加わった際に第１パッドが側面近傍で破壊しにくくなる。よって、第１パッドへのリードの接合強度を高めることができる。第３に、第１パッドの側面は、トレンチの平坦面の外挿面上にある。これにより、端子構造の製造において、トレンチを形成する工程に付随して、第１パッドの側面を形成することができる。よって、上述したように十分な厚みを有する側面を、製造時に大きな労力を伴うことなく、形成することができる。以上から、広帯域化に対応しつつ、製造のための労力を大きく増大させることなくリードの接合強度を高めることができる。 According to one embodiment, firstly, by providing a trench on the main surface of the substrate, the capacitive coupling between the wiring paths can be adjusted. This makes it possible to support a wider band. Secondly, by satisfying the above-mentioned thickness condition, it is possible to prevent the first pad from having an excessively small thickness on the side surface. This makes it difficult for the first pad to break near the side surface when a force is applied to the lead. Therefore, the bonding strength of the lead to the first pad can be increased. Third, the side surface of the first pad is on the extrapolated surface of the flat surface of the trench. Thereby, in the manufacture of the terminal structure, the side surface of the first pad can be formed in association with the step of forming the trench. Therefore, as described above, a side surface having a sufficient thickness can be formed without much labor during manufacturing. From the above, it is possible to increase the bonding strength of the reed without significantly increasing the labor for manufacturing while supporting the widening of the band.
　この発明の目的、特徴、局面、および利点は、以下の詳細な説明と添付図面とによって、より明白となる。 The objectives, features, aspects, and advantages of the present invention will be made clearer by the following detailed description and accompanying drawings.
本発明の実施の形態１における高周波モジュールの構成を概略的に示す平面図である。It is a top view which shows schematic structure of the high frequency module in Embodiment 1 of this invention. 本発明の実施の形態１におけるパッケージの構成を概略的に示す平面図である。It is a top view which shows schematic structure of the package in Embodiment 1 of this invention. 本発明の実施の形態１における端子構造の構成を概略的に示す回路図である。It is a circuit diagram which shows schematic structure of the terminal structure in Embodiment 1 of this invention. 図２の線ＩＶ－ＩＶに沿う概略的な部分断面図である。It is a schematic partial cross-sectional view along the line IV-IV of FIG. 図３の端子構造の回路の一部を、図４の視野に平行な視野で示す模式図である。It is a schematic diagram which shows a part of the circuit of the terminal structure of FIG. 3 in the field of view parallel to the field of view of FIG. 本発明の実施の形態１における端子構造の構成を概略的に示す部分平面図である。It is a partial plan view which shows roughly the structure of the terminal structure in Embodiment 1 of this invention. 図６の線ＶＩＩ－ＶＩＩに沿う概略的な部分断面図である。6 is a schematic partial cross-sectional view taken along line VII-VII of FIG. 図６の線ＶＩＩＩ－ＶＩＩＩに沿う概略的な部分断面図である。FIG. 6 is a schematic partial cross-sectional view taken along line VIII-VIII of FIG. 比較例１の構成を図７と同様の視野で示す部分断面図である。It is a partial cross-sectional view which shows the structure of the comparative example 1 in the same field of view as FIG. 比較例２の構成を図７と同様の視野で示す部分断面図である。It is a partial cross-sectional view which shows the structure of the comparative example 2 in the same field of view as FIG. 図７の第１変形例を概略的に示す部分断面図である。FIG. 5 is a partial cross-sectional view schematically showing a first modification of FIG. 7. 図７の第２変形例を概略的に示す部分断面図である。FIG. 5 is a partial cross-sectional view schematically showing a second modification of FIG. 7. 本発明の実施の形態２における端子構造の構成を概略的に示す部分平面図である。It is a partial plan view which shows roughly the structure of the terminal structure in Embodiment 2 of this invention. 図１３の変形例を概略的に示す部分平面図である。It is a partial plan view which shows the modification of FIG. 13 schematically. 本発明の実施の形態３における端子構造の構成を概略的に示す部分平面図である。It is a partial plan view which shows roughly the structure of the terminal structure in Embodiment 3 of this invention. 図１５の線ＸＶＩ－ＸＶＩに沿う概略的な部分断面図である。FIG. 5 is a schematic partial cross-sectional view taken along the line XVI-XVI of FIG. 本発明の実施の形態４における端子構造の構成を概略的に示す部分平面図である。It is a partial plan view which shows roughly the structure of the terminal structure in Embodiment 4 of this invention. 図１７の線ＸＶＩＩＩ－ＸＶＩＩＩに沿う概略的な部分断面図である。FIG. 6 is a schematic partial cross-sectional view taken along line XVIII-XVIII of FIG. 本発明の実施の形態５における端子構造の製造方法の第１工程を概略的に示す部分平面図である。It is a partial plan view which shows roughly the 1st step of the manufacturing method of the terminal structure in Embodiment 5 of this invention. 図１９の線ＸＸ－ＸＸに沿う概略的な部分断面図である。FIG. 5 is a schematic partial cross-sectional view taken along the line XX-XX of FIG. 本発明の実施の形態５における端子構造の製造方法の第２工程を概略的に示す部分断面図である。FIG. 5 is a partial cross-sectional view schematically showing a second step of the method for manufacturing a terminal structure according to a fifth embodiment of the present invention. 本発明の実施の形態５における端子構造の製造方法の第３工程を概略的に示す部分断面図である。FIG. 5 is a partial cross-sectional view schematically showing a third step of the method for manufacturing a terminal structure according to a fifth embodiment of the present invention. 図１９の変形例を示す概略的な部分平面図である。It is a schematic partial plan view which shows the modification of FIG. 図２０の変形例を示すものであって、図２３の線ＸＸＩＶ－ＸＸＩＶに沿う概略的な部分断面図である。FIG. 20 shows a modification of FIG. 20, and is a schematic partial cross-sectional view taken along the line XXIV-XXIV of FIG. 23. 本発明の実施の形態６における端子構造の構成を概略的に示す部分断面図である。It is a partial cross-sectional view which shows roughly the structure of the terminal structure in Embodiment 6 of this invention. 本発明の実施の形態７における端子構造の製造方法の第１工程を概略的に示す部分平面図である。It is a partial plan view which shows roughly the 1st step of the manufacturing method of the terminal structure in Embodiment 7 of this invention. 図２６の線ＸＸＶＩＩ－ＸＸＶＩＩに沿う概略的な部分断面図である。FIG. 6 is a schematic partial cross-sectional view taken along the line XXVII-XXVII of FIG. 本発明の実施の形態７における端子構造の製造方法の第２工程を概略的に示す部分平面図である。FIG. 5 is a partial plan view schematically showing a second step of the method for manufacturing a terminal structure according to the seventh embodiment of the present invention. 図２８の線ＸＸＩＸ－ＸＸＩＸに沿う概略的な部分断面図である。FIG. 8 is a schematic partial cross-sectional view taken along the line XXIX-XXIX of FIG. 28. 本発明の実施の形態７における端子構造の製造方法の第３工程を概略的に示す部分断面図である。FIG. 5 is a partial cross-sectional view schematically showing a third step of the method for manufacturing a terminal structure according to the seventh embodiment of the present invention. 図２６の変形例を示す概略的な部分平面図である。It is a schematic partial plan view which shows the modification of FIG. 26. 図２７の変形例を示すものであって、図３１の線ＸＸＸＩＩ－ＸＸＸＩＩに沿う概略的な部分断面図である。FIG. 27 shows a modification of FIG. 27, and is a schematic partial cross-sectional view taken along the line XXXII-XXXII of FIG. 31.
　以下、図面に基づいて本発明の実施の形態について説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
　＜実施の形態１＞
　図１は、本実施の形態１における高周波モジュール７０１の構成を概略的に示す平面図である。なお蓋体７３０については、図を見やすくするために、外縁のみが二点鎖線で示されている。図２は、高周波モジュール７０１を得るために用いられるパッケージ５０１の構成を概略的に示す平面図である。 <Embodiment 1>
FIG. 1 is a plan view schematically showing the configuration of the high frequency module 701 according to the first embodiment. For the lid body 730, only the outer edge is shown by a chain double-dashed line for easy viewing. FIG. 2 is a plan view schematically showing the configuration of the package 501 used to obtain the high frequency module 701.
　高周波モジュール７０１（図１）は、パッケージ５０１（図２）と、蓋体７３０と、内部回路７５０とを有している。内部回路７５０はＩＣ（集積回路）７５１を有している。ＩＣ７５１は高い動作周波数を有していてよく、具体的には５５ＧＨｚ以上の動作周波数を有していてよい。内部回路７５０はさらに光学部品７５２を有していてよく、その場合、高周波モジュール７０１およびパッケージ５０１はそれぞれ、光モジュールおよび光パッケージである。光学部品７５２は、例えば、レーザーダイオードである。 The high frequency module 701 (FIG. 1) has a package 501 (FIG. 2), a lid 730, and an internal circuit 750. The internal circuit 750 has an IC (integrated circuit) 751. The IC751 may have a high operating frequency, specifically 55 GHz or higher. The internal circuit 750 may further include an optical component 752, in which case the high frequency module 701 and the package 501 are an optical module and an optical package, respectively. The optical component 752 is, for example, a laser diode.
　パッケージ５０１は、端子構造３０１と、ケーシング５３０とを有している。ケーシング５３０は、枠体５３２と、枠体５３２を支持する板体５３１とを有している。板体５３１上の空間を枠体５３２が囲むことによって、キャビティＣＶが構成されている。蓋体７３０はキャビティＣＶを封止している。内部回路７５０はキャビティＣＶ内に実装されている。パッケージ５０１が光パッケージである場合、パッケージ５０１の外部に配置された光ファイバ（図示せず）からの光を受けるためまたは光ファイバへ光を送るための経路を確保するために、ケ―シング５３０の枠体５３２に開口部５３５が設けられている。開口部５３５には、光ファイバを固定するための筒状部材が取り付けられていてもよい。筒状部材の内部に透光性材料が取り付けられていてもよい。 Package 501 has a terminal structure 301 and a casing 530. The casing 530 has a frame body 532 and a plate body 531 that supports the frame body 532. The cavity CV is formed by surrounding the space on the plate body 531 with the frame body 532. The lid 730 seals the cavity CV. The internal circuit 750 is mounted in the cavity CV. If the package 501 is an optical package, the casing 530 is to provide a path to receive or send light from an optical fiber (not shown) located outside the package 501. An opening 535 is provided in the frame body 532 of the above. A tubular member for fixing the optical fiber may be attached to the opening 535. A translucent material may be attached to the inside of the tubular member.
　端子構造３０１は枠体５３２に取り付けられている。端子構造３０１は、キャビティＣＶの内部に位置する部分と、キャビティＣＶの外部に位置する部分とを有している。これにより、端子構造３０１は、キャビティＣＶの内部と外部とをつなぐ電気的経路を構成している。この構成を得るために、端子構造３０１は、ケーシング５３０の枠体５３２に設けられた貫通孔ＴＨを貫通している。 The terminal structure 301 is attached to the frame body 532. The terminal structure 301 has a portion located inside the cavity CV and a portion located outside the cavity CV. As a result, the terminal structure 301 constitutes an electrical path connecting the inside and the outside of the cavity CV. In order to obtain this configuration, the terminal structure 301 penetrates through the through hole TH provided in the frame body 532 of the casing 530.
　端子構造３０１は、信号端子３１１、信号端子３１２、接地端子３１６および接地端子３１７をキャビティＣＶの内部に有しており、また、信号リード３２１、信号リード３２２、接地リード３２６および接地リード３２７をキャビティＣＶの外部に有している。また端子構造３０１は、信号端子３１１ａ、信号端子３１２ａ、接地端子３１６ａおよび接地端子３１７ａをキャビティＣＶの内部に有しており、また、信号リード３２１ａ、信号リード３２２ａ、接地リード３２６ａおよび接地リード３２７ａをキャビティＣＶの外部に有している。 The terminal structure 301 has a signal terminal 311, a signal terminal 312, a ground terminal 316 and a ground terminal 317 inside the cavity CV, and also has a signal lead 321 and a signal lead 322, a ground lead 326 and a ground lead 327 in the cavity. It is held outside the CV. Further, the terminal structure 301 has a signal terminal 311a, a signal terminal 312a, a ground terminal 316a and a ground terminal 317a inside the cavity CV, and also has a signal lead 321a, a signal lead 322a, a ground lead 326a and a ground lead 327a. It is provided outside the cavity CV.
　図３は、端子構造３０１を概略的に示す回路図である。端子構造３０１は、本実施の形態においては、差動線路ＣＡおよび差動線路ＣＢを構成している。差動線路ＣＡは、信号端子３１１、信号端子３１２、接地端子３１６、接地端子３１７、信号リード３２１、信号リード３２２、接地リード３２６、接地リード３２７、信号線３３１、信号線３３２、接地線３３６、および接地線３３７を有している。信号線３３１は信号端子３１１と信号リード３２１との間の配線である。信号線３３２は信号端子３１２と信号リード３２２との間の配線である。接地線３３６は接地端子３１６と接地リード３２６との間の配線である。接地線３３７は接地端子３１７と接地リード３２７との間の配線である。同様に、差動線路ＣＢは、信号端子３１１ａ、信号端子３１２ａ、接地端子３１６ａ、接地端子３１７ａ、信号リード３２１ａ、信号リード３２２ａ、接地リード３２６ａ、接地リード３２７ａ、信号線３３１ａ、信号線３３２ａ、接地線３３６ａ、および接地線３３７ａを有している。信号線３３１ａは信号端子３１１ａと信号リード３２１ａとの間の配線である。信号線３３２ａは信号端子３１２ａと信号リード３２２ａとの間の配線である。接地線３３６ａは接地端子３１６ａと接地リード３２６ａとの間の配線である。接地線３３７ａは接地端子３１７ａと接地リード３２７ａとの間の配線である。 FIG. 3 is a circuit diagram schematically showing the terminal structure 301. In the present embodiment, the terminal structure 301 constitutes the differential line CA and the differential line CB. The differential line CA includes a signal terminal 311, a signal terminal 312, a ground terminal 316, a ground terminal 317, a signal lead 321 and a signal lead 322, a ground lead 326, a ground lead 327, a signal line 331, a signal line 332, and a ground line 336. And has a ground wire 337. The signal line 331 is a wiring between the signal terminal 311 and the signal lead 321. The signal line 332 is a wiring between the signal terminal 312 and the signal lead 322. The ground wire 336 is a wiring between the ground terminal 316 and the ground lead 326. The ground wire 337 is a wiring between the ground terminal 317 and the ground lead 327. Similarly, the differential line CB includes a signal terminal 311a, a signal terminal 312a, a ground terminal 316a, a ground terminal 317a, a signal lead 321a, a signal lead 322a, a ground lead 326a, a ground lead 327a, a signal line 331a, a signal line 332a, and a ground. It has a wire 336a and a ground wire 337a. The signal line 331a is a wiring between the signal terminal 311a and the signal lead 321a. The signal line 332a is a wiring between the signal terminal 312a and the signal lead 322a. The ground wire 336a is a wiring between the ground terminal 316a and the ground lead 326a. The ground wire 337a is a wiring between the ground terminal 317a and the ground lead 327a.
　差動線路ＣＢの構成は差動線路ＣＡの構成と同様であってよいので、以下においては差動線路ＣＡについてのみ詳述する。なお変形例として、差動線路の数は２つ以外であってよい。また変形例として、差動線路とは異なる線路が構成されていてもよい。 Since the configuration of the differential line CB may be the same as the configuration of the differential line CA, only the differential line CA will be described in detail below. As a modification, the number of differential lines may be other than two. Further, as a modification, a line different from the differential line may be configured.
　なお本明細書においては、高周波モジュール７０１が使用される際に接地電位（より一般的に言えば基準電位）とされることが想定される部材の名称に「接地」の文言を付している。これら部材は、異なる電位を有する必要がないので、互いにつながっていてよい。具体的には、接地線３３６と接地線３３７との組は一体化されていてよい。 In this specification, the word "ground" is added to the name of a member that is assumed to have a ground potential (more generally, a reference potential) when the high-frequency module 701 is used. .. These members do not have to have different potentials and may be connected to each other. Specifically, the set of the ground wire 336 and the ground wire 337 may be integrated.
　図４は、図２の線ＩＶ－ＩＶに沿う概略的な部分断面図である。図５は、信号端子３１１と信号線３３１と信号リード３２１とによって構成される回路を、図４の視野に平行な視野に対応づけて模式的に示す図である。信号線３３１は、端子構造３０１の内部において、厚み方向（図中、縦方向）および面内方向（図中、横方向）に延びる配線である。なお、信号端子３１２と信号線３３２と信号リード３２２とによって構成される回路、接地端子３１６と接地リード３２６と接地線３３６とによって構成される回路、および接地端子３１７と接地リード３２７と接地線３３７とによって構成される回路も、ほぼ同様である。 FIG. 4 is a schematic partial cross-sectional view taken along line IV-IV of FIG. FIG. 5 is a diagram schematically showing a circuit composed of a signal terminal 311, a signal line 331, and a signal lead 321 in association with a field of view parallel to the field of view of FIG. The signal line 331 is a wiring extending in the thickness direction (vertical direction in the drawing) and the in-plane direction (horizontal direction in the drawing) inside the terminal structure 301. A circuit composed of a signal terminal 312, a signal line 332, and a signal lead 322, a circuit composed of a ground terminal 316, a ground lead 326, and a ground wire 336, and a ground terminal 317, a ground lead 327, and a ground wire 337. The circuit configured by and is almost the same.
　図６は、本実施の形態１における端子構造３０１の構成を概略的に示す部分平面図である。図７および図８のそれぞれは、図６の線ＶＩＩ－ＶＩＩおよび線ＶＩＩＩ－ＶＩＩＩに沿う概略的な部分断面図である。なお図６においては、図を見やすくするために、ろう材９０（図７および図８）が図示されていない。また線ＶＩＩ－ＶＩＩ（図６）は縁ＥＤに平行であり、線ＶＩＩＩ－ＶＩＩＩ（図６）は縁ＥＤに垂直である。 FIG. 6 is a partial plan view schematically showing the configuration of the terminal structure 301 according to the first embodiment. 7 and 8 are schematic partial cross-sectional views along lines VII-VII and VIII-VIII of FIG. 6, respectively. Note that in FIG. 6, the brazing filler metal 90 (FIGS. 7 and 8) is not shown in order to make the figure easier to see. The line VII-VII (FIG. 6) is parallel to the edge ED and the line VIII-VIII (FIG. 6) is perpendicular to the edge ED.
　端子構造３０１は前述したように、信号リード３２１と、信号リード３２２と、接地リード３２６と、接地リード３２７とを有しており、さらに、基体１０と、信号パッド２１（第１パッド）と、信号パッド２２（第４パッド）と、接地パッド２６（第２パッド）と、接地パッド２７（第３パッド）と、ろう材９０とを有している。なお信号パッドと接地パッドとの表面に、ろう材の濡れ性を高めるためのめっき被膜が設けられていてもよい。また、信号リードと、接地リードと、ろう材との表面に、酸化を防止するためのめっき被膜が設けられていてもよい。 As described above, the terminal structure 301 has a signal lead 321 and a signal lead 322, a grounding lead 326, and a grounding lead 327, and further includes a substrate 10, a signal pad 21 (first pad), and the like. It has a signal pad 22 (fourth pad), a ground pad 26 (second pad), a ground pad 27 (third pad), and a brazing material 90. A plating film may be provided on the surfaces of the signal pad and the ground pad to improve the wettability of the brazing material. Further, a plating film for preventing oxidation may be provided on the surfaces of the signal reed, the ground reed, and the brazing material.
　基体１０は絶縁体セラミックスからなる。基体１０は、主面ＭＳ（図７における上面）を有している。主面ＭＳは直線状の縁ＥＤ（図６）を含む。 The substrate 10 is made of insulator ceramics. The substrate 10 has a main surface MS (upper surface in FIG. 7). The main surface MS includes a linear edge ED (FIG. 6).
　信号パッド２１および信号パッド２２は信号線用のものであり、接地パッド２６および接地パッド２７は接地用のものである。また端子構造３０１は、接地パッド２６と接地パッド２７とを互いにつなぐ接続層２５を有していてよい。信号パッド２１、信号パッド２２、接地パッド２６、接地パッド２７、および接続層２５は、金属からなり、基体１０の主面ＭＳ上に設けられている。信号パッド２１は接地パッド２６および接地パッド２７の間に配置されている。信号パッド２２は、基体１０の主面ＭＳ上の信号パッド２１と接地パッド２７との間に配置されている。 The signal pad 21 and the signal pad 22 are for the signal line, and the ground pad 26 and the ground pad 27 are for the ground. Further, the terminal structure 301 may have a connection layer 25 that connects the ground pad 26 and the ground pad 27 to each other. The signal pad 21, signal pad 22, ground pad 26, ground pad 27, and connection layer 25 are made of metal and are provided on the main surface MS of the substrate 10. The signal pad 21 is arranged between the ground pad 26 and the ground pad 27. The signal pad 22 is arranged between the signal pad 21 and the ground pad 27 on the main surface MS of the substrate 10.
　基体１０の主面ＭＳにはトレンチＴＲが設けられている。トレンチＴＲは、その側壁として、主面ＭＳにつながる平坦面ＦＰを含む。平坦面ＦＰは、図７に示された例においては、主面ＭＳに実質的に垂直である。トレンチＴＲは、信号パッド２１と信号パッド２２との間の部分、信号パッド２１と接地パッド２６との間の部分および信号パッド２２と接地パッド２７との間の部分を含む。主面ＭＳは縁ＥＤ上において、トレンチ間隔ＳＴ（図７）でトレンチＴＲによって両端が区画された部分を有している。トレンチＴＲの内部の少なくとも一部は、セラミック基体の誘電率よりも低い誘電率を有する領域である。当該領域は、物質によって充填されていてよく、当該物質は気体であってよい。あるいは当該領域は真空であってもよい。トレンチは、好ましくは５０μｍ以上の深さを有しており、より好ましくは５０μｍ以上の深さにわたって上述した領域を有している。 A trench TR is provided on the main surface MS of the substrate 10. The trench TR includes a flat surface FP connected to the main surface MS as its side wall. The flat surface FP is substantially perpendicular to the main surface MS in the example shown in FIG. The trench TR includes a portion between the signal pad 21 and the signal pad 22, a portion between the signal pad 21 and the ground pad 26, and a portion between the signal pad 22 and the ground pad 27. The main surface MS has a portion on the edge ED whose both ends are partitioned by a trench TR at a trench spacing ST (FIG. 7). At least a part of the inside of the trench TR is a region having a dielectric constant lower than the dielectric constant of the ceramic substrate. The region may be filled with a substance, which may be a gas. Alternatively, the region may be in vacuum. The trench preferably has a depth of 50 μm or more, and more preferably has the above-mentioned region over a depth of 50 μm or more.
　信号パッド２１は、トレンチＴＲの平坦面ＦＰの仮想的な外挿面上に、側面ＦＳを有している。例えば図７に示されているように、基体１０の主面ＭＳに垂直な少なくとも一の断面視において、信号パッド２１は、横方向（主面ＭＳに平行な方向）における中点で厚みＴ１（第１厚み）を有しており、かつ側面ＦＳで厚みＴ２（第２厚み）を有している。厚みＴ１は、好ましくは１０μｍ以上であり、より好ましくは２５μｍ以上である。また厚みＴ１は、好ましくは１００μｍ以下である。本実施の形態において、厚みＴ２が厚みＴ１の半分よりも大きいという厚み条件が満たされている。なお、厚みＴ２は厚みＴ１の７０％以上であることがさらに好ましい。本実施の形態においては、上記横方向は、縁ＥＤに沿った方向である。また信号パッド２１は、この厚み条件を満たす側面ＦＳを、横方向における両端の各々において有している。なお、厚みＴ１は、信号パッド２１の寸法であり、信号パッド２１につながるビアホール中の電極（本実施の形態において図示せず）は無視され、また、信号パッド２１に付加されたろう材９０およびめっき被膜も無視される。また好ましくは、図７における横方向において、信号パッド２１の端から１０μｍ内側の位置における信号パッド２１の厚みは、厚みＴ１の半分よりも大きい。 The signal pad 21 has a side surface FS on the virtual extrapolation surface of the flat surface FP of the trench TR. For example, as shown in FIG. 7, in at least one cross-sectional view perpendicular to the main surface MS of the substrate 10, the signal pad 21 has a thickness T1 (thickness T1) at the midpoint in the lateral direction (direction parallel to the main surface MS). It has a first thickness) and has a thickness T2 (second thickness) on the side surface FS. The thickness T1 is preferably 10 μm or more, and more preferably 25 μm or more. The thickness T1 is preferably 100 μm or less. In the present embodiment, the thickness condition that the thickness T2 is larger than half of the thickness T1 is satisfied. The thickness T2 is more preferably 70% or more of the thickness T1. In the present embodiment, the lateral direction is a direction along the edge ED. Further, the signal pad 21 has side surface FSs satisfying this thickness condition at both ends in the lateral direction. The thickness T1 is the dimension of the signal pad 21, and the electrode (not shown in the present embodiment) in the via hole connected to the signal pad 21 is ignored, and the brazing material 90 and the plating added to the signal pad 21 are ignored. The coating is also ignored. Further, preferably, in the lateral direction in FIG. 7, the thickness of the signal pad 21 at a position 10 μm inside from the end of the signal pad 21 is larger than half of the thickness T1.
　寸法に関しての上述した無視を考慮するものとして、典型的には、信号パッド２１の下面（基体１０に面する面）は、角部を有しない平坦な面である。ここで、「平坦な面」は、主に製造上の理由に起因して、わずかな湾曲を有する部分を含んでもよい。ここで、「わずかな湾曲」は、例えば、後述するパッド幅ＷＰ程度以上の曲率半径での湾曲である。また典型的には、図７のような断面視において、信号パッド２１の厚みは、信号パッド２１のおおよそ中央部分（より一般的に言えば、信号パッド２１の両端から離れた部分）において最大値を有しており、かつ、この部分から両端の各々に向かって、おおよそ一定であるかまたは徐々に減少している。また典型的には、図７のような断面視において、信号パッド２１の厚みの最小値は厚みＴ２であり、その場合、信号パッド２１の厚みは、Ｔ２以上Ｔ１以下である。また図７のような断面視において、信号パッド２１の厚みは、その平均値から±３０％の範囲にあることが好ましい。 In consideration of the above-mentioned neglect regarding the dimensions, typically, the lower surface of the signal pad 21 (the surface facing the substrate 10) is a flat surface having no corners. Here, the "flat surface" may include a portion having a slight curvature, mainly due to manufacturing reasons. Here, the "slight curvature" is, for example, a curvature with a radius of curvature of about the pad width WP or more, which will be described later. Also, typically, in a cross-sectional view as shown in FIG. 7, the thickness of the signal pad 21 is the maximum value at an approximately central portion of the signal pad 21 (more generally, a portion away from both ends of the signal pad 21). And, from this part toward each of both ends, it is approximately constant or gradually decreases. Further, typically, in the cross-sectional view as shown in FIG. 7, the minimum value of the thickness of the signal pad 21 is the thickness T2, and in that case, the thickness of the signal pad 21 is T2 or more and T1 or less. Further, in the cross-sectional view as shown in FIG. 7, the thickness of the signal pad 21 is preferably in the range of ± 30% from the average value.
　信号パッド２１の側面ＦＳは、本実施の形態においては、縁ＥＤ（図６）まで延びている。基体１０の主面ＭＳに垂直であって縁ＥＤを含む断面視は、図７の断面視とほぼ同様であり、よって両断面において、前述した厚み条件が満たされている。 The side surface FS of the signal pad 21 extends to the edge ED (FIG. 6) in the present embodiment. The cross-sectional view perpendicular to the main surface MS of the substrate 10 and including the edge ED is substantially the same as the cross-sectional view of FIG. 7, and thus the above-mentioned thickness conditions are satisfied in both cross sections.
　信号パッド２１は、横方向において（本実施の形態においては具体的には縁ＥＤ上で）、幅寸法としてパッド幅ＷＰを有している。パッド幅ＷＰは、２５０μｍ以上、５００μｍ以下であることが好ましい。またパッド幅ＷＰは信号リード３２１の幅よりも大きく、好ましくは信号パッド２１は信号リード３２１の両側において１００μｍ以上のマージンを有している。本実施の形態においては、両側におけるマージンが実質的に同じであることが好ましい。言い換えれば、横方向において、信号リード３２１の中心は信号パッド２１の中心に実質的に一致していることが好ましい。またパッド幅ＷＰは、横方向における信号パッド２１の中心と信号パッド２２の中心との間の距離の４０％以上９５％以下であることが好ましい。 The signal pad 21 has a pad width WP as a width dimension in the lateral direction (specifically, on the edge ED in the present embodiment). The pad width WP is preferably 250 μm or more and 500 μm or less. Further, the pad width WP is larger than the width of the signal lead 321, and preferably the signal pad 21 has a margin of 100 μm or more on both sides of the signal lead 321. In this embodiment, it is preferable that the margins on both sides are substantially the same. In other words, in the lateral direction, it is preferable that the center of the signal lead 321 substantially coincides with the center of the signal pad 21. The pad width WP is preferably 40% or more and 95% or less of the distance between the center of the signal pad 21 and the center of the signal pad 22 in the lateral direction.
　本実施の形態においてはパッド幅ＷＰはトレンチ間隔ＳＴ（図７）と等しい。前述した厚み条件は少なくとも、基体１０の主面ＭＳに垂直かつ縁ＥＤに平行であって縁ＥＤからパッド幅ＷＰの３０％以内の任意の断面視において満たされていることが好ましい。より好ましくは、前述した厚み条件は少なくとも、基体１０の主面ＭＳに垂直かつ縁ＥＤに平行であって縁ＥＤからパッド幅ＷＰの５０％以内の任意の断面視において満たされている。 In this embodiment, the pad width WP is equal to the trench spacing ST (FIG. 7). It is preferable that the above-mentioned thickness condition is satisfied at least in any cross-sectional view perpendicular to the main surface MS of the substrate 10 and parallel to the edge ED and within 30% of the pad width WP from the edge ED. More preferably, the above-mentioned thickness condition is satisfied at least in any cross-sectional view perpendicular to the main surface MS of the substrate 10 and parallel to the edge ED and within 50% of the pad width WP from the edge ED.
　なお、信号パッド２２の構成は、上述した信号パッド２１の構成と同様であってよい。接地パッド２６および接地パッド２７は、信号パッド２１および信号パッド２２とは異なり、トレンチＴＲから離れていてよい。 The configuration of the signal pad 22 may be the same as the configuration of the signal pad 21 described above. The ground pad 26 and the ground pad 27 may be separated from the trench TR, unlike the signal pad 21 and the signal pad 22.
　信号リード３２１は、信号パッド２１に電気的に接続されるように、信号パッド２１上にろう材９０によって接合されている。信号リード３２１の、信号パッド２１に接合された部分は、縁ＥＤに垂直な方向、言い換えれば線ＶＩＩ－ＶＩＩ（図６）に垂直な方向、に沿って延びていることが好ましい。ろう材９０は、信号パッド２１の材料とは異なる材料からなり、信号パッド２１の融点よりも低い融点を有することが好ましく、例えば、銀ろう材である。信号リード３２２は、信号パッド２２に電気的に接続されるように、信号パッド２２上にろう材９０によって接合されている。接地リード３２６は、接地パッド２６に電気的に接続されるように、接地パッド２６上にろう材９０によって接合されている。接地リード３２７は、接地パッド２７に電気的に接続されるように、接地パッド２７上にろう材９０によって接合されている。信号リード３２１の幅（図６および図７における横方向の寸法）は、例えば、１５０μｍ以上２００μｍ以下であり、信号リード３２２の幅も同様であってよい。接地リード３２６および接地リード３２７の各々の幅は、信号リード３２１の幅よりも大きくてよい。 The signal lead 321 is joined on the signal pad 21 by a brazing material 90 so as to be electrically connected to the signal pad 21. The portion of the signal lead 321 joined to the signal pad 21 preferably extends along a direction perpendicular to the edge ED, in other words, a direction perpendicular to line VII-VII (FIG. 6). The brazing material 90 is made of a material different from the material of the signal pad 21, and preferably has a melting point lower than the melting point of the signal pad 21, for example, a silver brazing material. The signal lead 322 is joined on the signal pad 22 by a brazing material 90 so as to be electrically connected to the signal pad 22. The ground lead 326 is joined on the ground pad 26 by a brazing material 90 so as to be electrically connected to the ground pad 26. The ground lead 327 is joined on the ground pad 27 by a brazing material 90 so as to be electrically connected to the ground pad 27. The width of the signal lead 321 (horizontal dimension in FIGS. 6 and 7) is, for example, 150 μm or more and 200 μm or less, and the width of the signal lead 322 may be the same. The width of each of the ground lead 326 and the ground lead 327 may be larger than the width of the signal lead 321.
　図９は、比較例１としての端子構造３００Ａの構成を、図７と同様の視野で示す部分断面図である。端子構造３００Ａにおいては、信号パッド２１のパッド幅ＷＰがトレンチ間隔ＳＴよりも小さく、信号パッド２１がトレンチＴＲから離れている。図９の断面視において、信号パッド２１の両端の厚みは、横方向（主面ＭＳに平行な方向）における中点での厚みＴ１に比して半分未満であり、典型的には、図９の縦方向において１μｍ未満である。このような構成は、上記のようにトレンチＴＲから離れた信号パッド２１がスクリーン印刷によって形成されている場合に典型的である。なぜならばスクリーン印刷においては、パターンの端で厚みがかなり小さくなりやすいからである。 FIG. 9 is a partial cross-sectional view showing the configuration of the terminal structure 300A as Comparative Example 1 in the same field of view as in FIG. In the terminal structure 300A, the pad width WP of the signal pad 21 is smaller than the trench spacing ST, and the signal pad 21 is separated from the trench TR. In the cross-sectional view of FIG. 9, the thickness of both ends of the signal pad 21 is less than half of the thickness T1 at the midpoint in the lateral direction (direction parallel to the main surface MS), and is typically FIG. It is less than 1 μm in the vertical direction of. Such a configuration is typical when the signal pad 21 away from the trench TR as described above is formed by screen printing. This is because in screen printing, the thickness tends to be considerably small at the edges of the pattern.
　信号リード３２１を信号パッド２１から引き剥がす外力Ｆ（図８）が信号リード３２１に何らかの原因によって印加されると、信号リード３２１が接合されている信号パッド２１に応力が加わる。端子構造３００Ａにおいては、この応力に起因して信号パッド２１が破壊しやすい。なぜならば、第１の理由として、パッド幅ＷＰが小さいので、信号パッド２１の単位面積当たりに加わる応力が大きくなりやすいためである。第２の理由として、信号パッド２１の両端が薄いので、これら両端での応力緩和が働きにくく、結果として、信号パッド２１の端が破壊の起点となりやすいためである。 When an external force F (FIG. 8) that peels off the signal lead 321 from the signal pad 21 is applied to the signal lead 321 for some reason, stress is applied to the signal pad 21 to which the signal lead 321 is joined. In the terminal structure 300A, the signal pad 21 is easily broken due to this stress. The first reason is that since the pad width WP is small, the stress applied per unit area of the signal pad 21 tends to be large. The second reason is that since both ends of the signal pad 21 are thin, stress relaxation at both ends is difficult to work, and as a result, the end of the signal pad 21 tends to be a starting point of fracture.
　図１０は、比較例２としての端子構造３００Ｂの構成を図７と同様の視野で示す部分断面図である。端子構造３００Ｂにおいては、信号パッド２１のパッド幅ＷＰがトレンチ間隔ＳＴとおおよそ同じである。よって比較例１としての端子構造３００Ａに関連して述べた上記第１の理由は、端子構造３００Ｂには該当しない。一方で、本比較例２では、トレンチＴＲの平坦面ＦＰの外挿面上において、信号パッド２１は実質的にゼロ（例えば厚み１μｍ未満）の厚みＴ２を有しており、よって上記第２の理由は端子構造３００Ｂにも該当する。従って、端子構造３００Ｂにおいても信号パッド２１は破壊しやすい。また、端子構造３００Ｂのように信号パッド２１の厚みが実質的にゼロに至る箇所と、トレンチＴＲの側壁とを横方向において精度よく一致させることは、製造上、難易度が高い。 FIG. 10 is a partial cross-sectional view showing the configuration of the terminal structure 300B as Comparative Example 2 in the same field of view as in FIG. In the terminal structure 300B, the pad width WP of the signal pad 21 is substantially the same as the trench spacing ST. Therefore, the first reason described in relation to the terminal structure 300A as Comparative Example 1 does not correspond to the terminal structure 300B. On the other hand, in Comparative Example 2, the signal pad 21 has a thickness T2 of substantially zero (for example, a thickness of less than 1 μm) on the extrapolated surface of the flat surface FP of the trench TR, and thus the second The reason also applies to the terminal structure 300B. Therefore, even in the terminal structure 300B, the signal pad 21 is easily destroyed. Further, it is difficult in manufacturing to accurately match the portion where the thickness of the signal pad 21 reaches substantially zero, such as the terminal structure 300B, with the side wall of the trench TR in the lateral direction.
　本実施の形態によれば、第１に、基体１０の主面ＭＳにトレンチＴＲが設けられることによって、配線経路間の容量結合を調整することができる。これにより広帯域化に対応することができる。第２に、前述した厚み条件（厚みＴ２＞厚みＴ１／２）が満たされることによって、信号パッド２１が側面ＦＳで過度に小さな厚みを有することが避けられる。これにより、信号リード３２１に力が加わった際に信号パッド２１が側面ＦＳ近傍で破壊されにくくなる。よって、信号リード３２１の接合強度を高めることができる。第３に、信号パッド２１の側面ＦＳは、トレンチＴＲの平坦面ＦＰの外挿面上にある。これにより、端子構造３０１の製造において、トレンチＴＲを形成する工程に付随して、信号パッド２１の側面ＦＳを形成することができる。よって、上述したように十分な厚みを有する側面ＦＳを、製造時に大きな労力を伴うことなく形成することができる。以上から、広帯域化に対応しつつ、製造のための労力を大きく増大させることなく、信号リード３２１の接合強度を高めることができる。 According to the present embodiment, first, by providing the trench TR on the main surface MS of the substrate 10, the capacitive coupling between the wiring paths can be adjusted. This makes it possible to support a wider band. Secondly, by satisfying the above-mentioned thickness condition (thickness T2> thickness T1 / 2), it is possible to prevent the signal pad 21 from having an excessively small thickness on the side surface FS. As a result, the signal pad 21 is less likely to be destroyed in the vicinity of the side surface FS when a force is applied to the signal lead 321. Therefore, the bonding strength of the signal lead 321 can be increased. Third, the side surface FS of the signal pad 21 is on the extrapolation surface of the flat surface FP of the trench TR. Thereby, in the manufacture of the terminal structure 301, the side surface FS of the signal pad 21 can be formed in association with the step of forming the trench TR. Therefore, as described above, the side surface FS having a sufficient thickness can be formed without much labor during manufacturing. From the above, it is possible to increase the junction strength of the signal lead 321 while supporting a wide band without significantly increasing the labor for manufacturing.
　また本実施の形態においては、基体１０の主面ＭＳに垂直であって縁ＥＤを含む断面視において、前述した厚み条件が満たされている。これにより、信号リード３２１に力が加わった際に、信号パッド２１が基体１０の縁ＥＤ近傍で破壊しにくくなる。前述した厚み条件は少なくとも、基体１０の主面ＭＳに垂直であって、縁ＥＤからパッド幅ＷＰの３０％以内の任意の断面視において満たされていることが好ましい。これにより、信号リード３２１に力が加わった際に信号パッド２１が基体１０の縁ＥＤ近傍で、より破壊しにくくなる。 Further, in the present embodiment, the above-mentioned thickness condition is satisfied in the cross-sectional view including the edge ED, which is perpendicular to the main surface MS of the substrate 10. As a result, when a force is applied to the signal lead 321, the signal pad 21 is less likely to be destroyed near the edge ED of the substrate 10. It is preferable that the above-mentioned thickness condition is at least perpendicular to the main surface MS of the substrate 10 and satisfied in any cross-sectional view within 30% of the pad width WP from the edge ED. As a result, when a force is applied to the signal lead 321 the signal pad 21 is less likely to be destroyed near the edge ED of the substrate 10.
　信号線用の信号パッド２１は、接地用の接地パッド２６および接地パッド２７の間に配置されている。これにより、信号パッド２１を含む信号配線からの電磁界の漏れが防止される。よって、広帯域化に、より対応することができる。 The signal pad 21 for the signal line is arranged between the ground pad 26 for grounding and the ground pad 27. This prevents leakage of the electromagnetic field from the signal wiring including the signal pad 21. Therefore, it is possible to better cope with widening the bandwidth.
　トレンチＴＲは、信号パッド２１と信号パッド２２との間の部分、信号パッド２１と接地パッド２６との間の部分および信号パッド２２と接地パッド２７との間の部分を含む。これにより、信号パッド２１を通る信号線と、信号パッド２２を通る信号線との間での過大な容量結合を避けることができる。さらに、信号パッド２１を通る信号線と接地パッド２６を通る接地線との間、および、信号パッド２２を通る信号線と接地パッド２７を通る接地線との間での過大な容量結合を避けることができる。よって、広帯域化に、より対応することができる。 The trench TR includes a portion between the signal pad 21 and the signal pad 22, a portion between the signal pad 21 and the ground pad 26, and a portion between the signal pad 22 and the ground pad 27. This makes it possible to avoid excessive capacitive coupling between the signal line passing through the signal pad 21 and the signal line passing through the signal pad 22. Further, avoid excessive capacitive coupling between the signal line passing through the signal pad 21 and the grounding line passing through the grounding pad 26, and between the signal line passing through the signal pad 22 and the grounding line passing through the grounding pad 27. Can be done. Therefore, it is possible to better cope with widening the bandwidth.
　図１１は、図７の第１変形例としての端子構造３０２を概略的に示す部分断面図である。端子構造３０２においては、ろう材９０が信号パッド２１の側面ＦＳ上にまで延びている。本変形例においても、上記本実施の形態１とほぼ同様の効果が得られる。 FIG. 11 is a partial cross-sectional view schematically showing a terminal structure 302 as a first modification of FIG. 7. In the terminal structure 302, the brazing material 90 extends onto the side surface FS of the signal pad 21. Also in this modification, almost the same effect as that of the first embodiment can be obtained.
　図１２は、図７の第２変形例としての端子構造３０３を概略的に示す部分断面図である。端子構造３０３においては、平坦面ＦＰおよび側面ＦＳは、主面ＭＳに垂直な面から、角度ＡＧ傾いている。本変形例においては、厚みＴ２は、側面ＦＳの、厚み方向（図１２における縦方向）に沿った寸法と定義される。すなわち平坦面ＦＰに沿った側面ＦＳの長さとｃｏｓＡＧとの積が厚みＴ２である。角度ＡＧが十分に小さければ、本変形例においても上記実施の形態１とほぼ同様の効果が得られる。角度ＡＧは３０°未満であることが好ましい。また好ましくは、図１２における横方向において、信号パッド２１の端（図中、側面ＦＳの上端）から１０μｍ内側（１０μｍ中点寄り）の位置における信号パッド２１の厚みは、厚みＴ１の半分よりも大きい。 FIG. 12 is a partial cross-sectional view schematically showing a terminal structure 303 as a second modification of FIG. 7. In the terminal structure 303, the flat surface FP and the side surface FS are inclined at an angle AG from the surface perpendicular to the main surface MS. In this modification, the thickness T2 is defined as the dimension of the side surface FS along the thickness direction (vertical direction in FIG. 12). That is, the product of the length of the side surface FS along the flat surface FP and the cosAG is the thickness T2. If the angle AG is sufficiently small, almost the same effect as that of the first embodiment can be obtained in this modified example. The angle AG is preferably less than 30 °. Further, preferably, in the lateral direction in FIG. 12, the thickness of the signal pad 21 at a position 10 μm inside (close to the midpoint of 10 μm) from the end of the signal pad 21 (in the figure, the upper end of the side surface FS) is larger than half the thickness T1. large.
　なお上記本実施の形態においては、接地パッド２６と接地パッド２７との間に、差動線路ＣＡ（図３）用の１対のパッドとしての信号パッド２１および信号パッド２２が設けられている。変形例として、差動線路に代わって単一の線路が設けられてもよく、その場合、信号パッド２２および信号リード３２２は省略され得る。また上記においては信号パッド２１の側面ＦＳが縁ＥＤ（図６）まで延びているが、変形例として、側面ＦＳが縁ＥＤに達していなくてもよい。 In the above embodiment, a signal pad 21 and a signal pad 22 as a pair of pads for the differential line CA (FIG. 3) are provided between the ground pad 26 and the ground pad 27. As a modification, a single line may be provided instead of the differential line, in which case the signal pad 22 and the signal lead 322 may be omitted. Further, in the above, the side surface FS of the signal pad 21 extends to the edge ED (FIG. 6), but as a modification, the side surface FS may not reach the edge ED.
　また上述した各断面図においては、信号パッド２１、信号パッド２２、接地パッド２６および接地パッド２７の各々の表面と、基体１０の主面ＭＳの、これらパッドが形成されていない部分とが、同一平面上にある。このような形態は典型的には、製造において、基体１０となるグリーンシート上にこれらパッドとなるペースト層がスクリーン印刷によって形成された後、焼成工程前にこれらペースト層がグリーンシート中へプレスされることによって得られる。変形例として、主面ＭＳの、これらパッドが形成されていない部分から、各パッドの表面が盛り上がっていてもよく、そのような形態は、上記プレスが弱かったり省略されたりすることによって得られる。あるいは、そのような形態は、各パッドとなるペースト層の印刷工程が基体１０の焼成工程後に行われることによって得られる。 Further, in each of the cross-sectional views described above, the surfaces of the signal pad 21, the signal pad 22, the ground pad 26, and the ground pad 27 and the portion of the main surface MS of the substrate 10 on which these pads are not formed are the same. It is on a plane. Such a form is typically produced by screen printing the paste layers to be the pads on the green sheet to be the substrate 10 and then pressing these paste layers into the green sheet before the firing step. Obtained by doing. As a modification, the surface of each pad may be raised from the portion of the main surface MS where these pads are not formed, and such a form is obtained by weakening or omitting the press. Alternatively, such a form is obtained by performing the printing step of the paste layer to be each pad after the firing step of the substrate 10.
　＜実施の形態２＞
　図１３は、本実施の形態２における端子構造３０４の構成を概略的に示す部分平面図である。本実施の形態においては、トレンチＴＲは、接続層２５と信号パッド２１との間の部分、および接続層２５と信号パッド２２との間の部分を含む。さらに、信号パッド２１は、基体１０の主面上において、縁ＥＤおよびトレンチＴＲによって完全に囲まれている。具体的には、信号パッド２１は、縁ＥＤで構成された１辺と、トレンチＴＲで構成された３辺とを有する四角形の形状を有している。なお、図１３に示された例においては、信号パッド２１から対角方向の領域において、基体１０の主面上にトレンチＴＲが形成されていない。変形例として、端子構造３０５（図１４）のように、信号パッド２１から対角方向の領域においても基体１０の主面上にトレンチＴＲが形成されていてよい。 <Embodiment 2>
FIG. 13 is a partial plan view schematically showing the configuration of the terminal structure 304 according to the second embodiment. In the present embodiment, the trench TR includes a portion between the connection layer 25 and the signal pad 21, and a portion between the connection layer 25 and the signal pad 22. Further, the signal pad 21 is completely surrounded by the edge ED and the trench TR on the main surface of the substrate 10. Specifically, the signal pad 21 has a quadrangular shape having one side formed of the edge ED and three sides formed of the trench TR. In the example shown in FIG. 13, the trench TR is not formed on the main surface of the substrate 10 in the diagonal region from the signal pad 21. As a modification, as shown in the terminal structure 305 (FIG. 14), a trench TR may be formed on the main surface of the substrate 10 even in a region diagonally from the signal pad 21.
　なお、上記以外の構成については、上述した実施の形態１の構成とほぼ同じであるため、同一または対応する要素について同一の符号を付し、その説明を繰り返さない。 Since the configurations other than the above are almost the same as the configurations of the first embodiment described above, the same or corresponding elements are designated by the same reference numerals, and the description thereof will not be repeated.
　本実施の形態によれば、トレンチＴＲは、接続層２５と信号パッド２１との間の部分、および接続層２５と信号パッド２２との間の部分を含む。これにより、接地電位を有する接続層２５と、信号パッド２１を通る信号線および信号パッド２２を通る信号線の各々との間での、過大な容量結合を避けることができる。よって、広帯域化に、より対応することができる。 According to the present embodiment, the trench TR includes a portion between the connection layer 25 and the signal pad 21, and a portion between the connection layer 25 and the signal pad 22. This makes it possible to avoid excessive capacitive coupling between the connection layer 25 having a ground potential and each of the signal line passing through the signal pad 21 and the signal line passing through the signal pad 22. Therefore, it is possible to better cope with widening the bandwidth.
　信号パッド２１は主面ＭＳ上において縁ＥＤおよびトレンチＴＲによって完全に囲まれている。これにより、信号パッド２１の周囲全体にわたって、容量結合が抑えられる。よって、信号パッド２１を通る配線の特性インピーダンスの低下を、より抑制することができる。 The signal pad 21 is completely surrounded by the edge ED and the trench TR on the main surface MS. As a result, capacitive coupling is suppressed over the entire circumference of the signal pad 21. Therefore, the decrease in the characteristic impedance of the wiring passing through the signal pad 21 can be further suppressed.
　＜実施の形態３＞
　図１５は、本実施の形態３における端子構造３０６の構成を概略的に示す部分平面図である。図１６は、図１５の線ＸＶＩ－ＸＶＩに沿う概略的な部分断面図である。 <Embodiment 3>
FIG. 15 is a partial plan view schematically showing the configuration of the terminal structure 306 according to the third embodiment. FIG. 16 is a schematic partial cross-sectional view taken along the line XVI-XVI of FIG.
　端子構造３０６は、端子構造３０１（図６および図７：実施の形態１）の信号パッド２１および信号パッド２２に代わって、信号パッド２１Ａ（第１パッド）および信号パッド２２Ａ（第４パッド）を有している。本実施の形態においては、トレンチＴＲは、信号パッド２１Ａと信号パッド２２Ａとの間の部分を含むが、信号パッド２１Ａと接地パッド２６との間の部分および信号パッド２２Ａと接地パッド２７との間の部分は含まない。従って、基体１０の主面ＭＳは、信号パッド２１Ａと接地パッド２６との間および接地パッド２７と信号パッド２２Ａとの間において平坦である。その結果、信号パッド２１Ａは、信号パッド２１とは異なり、横方向（具体的には、縁ＥＤに沿った方向）における一端（図中、トレンチＴＲに接する右端）でのみ、実施の形態１で述べた厚み条件（厚みＴ２＞厚みＴ１／２）を満たす側面ＦＳを有している。他端（図中、左端）の厚みは、厚みＴ１に比して半分未満であり、典型的には１μｍ未満である。 The terminal structure 306 replaces the signal pad 21 and the signal pad 22 of the terminal structure 301 (FIGS. 6 and 7: Embodiment 1) with the signal pad 21A (first pad) and the signal pad 22A (fourth pad). Have. In the present embodiment, the trench TR includes a portion between the signal pad 21A and the signal pad 22A, but a portion between the signal pad 21A and the ground pad 26 and between the signal pad 22A and the ground pad 27. The part of is not included. Therefore, the main surface MS of the substrate 10 is flat between the signal pad 21A and the ground pad 26 and between the ground pad 27 and the signal pad 22A. As a result, unlike the signal pad 21, the signal pad 21A has only one end (in the figure, the right end in contact with the trench TR) in the lateral direction (specifically, the direction along the edge ED) in the first embodiment. It has a side surface FS that satisfies the above-mentioned thickness conditions (thickness T2> thickness T1 / 2). The thickness of the other end (left end in the figure) is less than half that of the thickness T1, and is typically less than 1 μm.
　主面ＭＳに平行な平面レイアウト（図１５参照）において、信号パッド２１Ａは、信号リード３２１とトレンチＴＲとの間の第１領域Ｒ１と、第１領域Ｒ１から信号リード３２１によって隔てられた第２領域Ｒ２とを含む。第１領域Ｒ１は一の仮想直線（図１５における寸法線）に沿って、信号リード３２１とトレンチＴＲとの間の最小距離ＤＴを有している。この一の仮想直線上に沿っての第２領域Ｒ２の寸法ＤＭは、最小距離ＤＴよりも大きいことが好ましい。この場合、横方向において、信号リード３２１の中心が信号パッド２１Ａの中心からずらされ、このずれは、例えば、１０μｍ以上、２５μｍ以下である。言い換えれば、寸法ＤＭと最小距離ＤＴとの差異は、例えば、２０μｍ以上、５０μｍ以下である。 In a planar layout parallel to the main surface MS (see FIG. 15), the signal pad 21A has a first region R1 between the signal lead 321 and the trench TR and a second region R1 separated from the first region R1 by the signal lead 321. Includes region R2. The first region R1 has a minimum distance DT between the signal lead 321 and the trench TR along one virtual straight line (dimension line in FIG. 15). The dimension DM of the second region R2 along this one virtual straight line is preferably larger than the minimum distance DT. In this case, in the lateral direction, the center of the signal lead 321 is deviated from the center of the signal pad 21A, and the deviation is, for example, 10 μm or more and 25 μm or less. In other words, the difference between the dimension DM and the minimum distance DT is, for example, 20 μm or more and 50 μm or less.
　信号パッド２２Ａの構成は、上述した信号パッド２１Ａの構成と同様であってよい。具体的には、信号パッド２２Ａの構成は、上述した信号パッド２１Ａの構成と、横方向において対称であってよい。 The configuration of the signal pad 22A may be the same as the configuration of the signal pad 21A described above. Specifically, the configuration of the signal pad 22A may be symmetrical with the configuration of the signal pad 21A described above in the lateral direction.
　なお、上記以外の構成については、上述した実施の形態１の構成とほぼ同じであるため、同一または対応する要素について同一の符号を付し、その説明を繰り返さない。 Since the configurations other than the above are almost the same as the configurations of the first embodiment described above, the same or corresponding elements are designated by the same reference numerals, and the description thereof will not be repeated.
　本実施の形態によっても、実施の形態１で述べた厚み条件を満たす側面ＦＳが設けられる。これにより、実施の形態１の効果に類した効果が得られる。 Also in this embodiment, a side surface FS that satisfies the thickness condition described in the first embodiment is provided. As a result, an effect similar to the effect of the first embodiment can be obtained.
　特に、寸法ＤＭが最小距離ＤＴよりも大きい場合は、信号パッド２１Ａの第２領域Ｒ２が広くなるので、信号リード３２１に力が加わった際に信号パッド２１Ａの第２領域Ｒ２が破壊しにくくなる。一方で、信号パッド２１Ａの第１領域Ｒ１は、前述した厚み条件が満たされていることによって、破壊しにくくされている。以上から、信号パッド２１Ａの第１領域Ｒ１および第２領域Ｒ２の両方が破壊しにくい。よって、信号パッド２１Ａへの信号リード３２１の接合強度を高めることができる。 In particular, when the dimension DM is larger than the minimum distance DT, the second region R2 of the signal pad 21A becomes wider, so that the second region R2 of the signal pad 21A is less likely to be destroyed when a force is applied to the signal lead 321. .. On the other hand, the first region R1 of the signal pad 21A is less likely to be destroyed because the above-mentioned thickness condition is satisfied. From the above, both the first region R1 and the second region R2 of the signal pad 21A are unlikely to be destroyed. Therefore, the bonding strength of the signal lead 321 to the signal pad 21A can be increased.
　＜実施の形態４＞
　図１７は、本実施の形態４における端子構造３０７の構成を概略的に示す部分平面図である。図１８は、図１７の線ＸＶＩＩＩ－ＸＶＩＩＩに沿う概略的な部分断面図である。 <Embodiment 4>
FIG. 17 is a partial plan view schematically showing the configuration of the terminal structure 307 according to the fourth embodiment. FIG. 18 is a schematic partial cross-sectional view taken along line XVIII-XVIII of FIG.
　端子構造３０７は、端子構造３０１（図６および図７：実施の形態１）の信号パッド２１および信号パッド２２に代わって、信号パッド２１Ｂ（第１パッド）および信号パッド２２Ｂ（第４パッド）を有している。本実施の形態においては、トレンチＴＲは、信号パッド２１Ｂと接地パッド２６との間の部分および信号パッド２２Ｂと接地パッド２７との間の部分を含むが、信号パッド２１Ｂと信号パッド２２Ｂとの間の部分は含まない。従って、基体１０の主面ＭＳは、信号パッド２１Ｂと信号パッド２２Ｂとの間において平坦である。その結果、信号パッド２１Ｂは、信号パッド２１とは異なり、横方向（具体的には、縁ＥＤに沿った方向）における一端（図中、トレンチＴＲに接する左端）でのみ、実施の形態１で述べた厚み条件（厚みＴ２＞厚みＴ１／２）を満たす側面ＦＳを有している。他端（図中、右端）の厚みは、厚みＴ１に比して半分未満であり、典型的には１μｍ未満である。 The terminal structure 307 replaces the signal pad 21 and the signal pad 22 of the terminal structure 301 (FIGS. 6 and 7: 1) with a signal pad 21B (first pad) and a signal pad 22B (fourth pad). Have. In the present embodiment, the trench TR includes a portion between the signal pad 21B and the ground pad 26 and a portion between the signal pad 22B and the ground pad 27, but between the signal pad 21B and the signal pad 22B. The part of is not included. Therefore, the main surface MS of the substrate 10 is flat between the signal pad 21B and the signal pad 22B. As a result, unlike the signal pad 21, the signal pad 21B has only one end (in the figure, the left end in contact with the trench TR) in the lateral direction (specifically, the direction along the edge ED) in the first embodiment. It has a side surface FS that satisfies the above-mentioned thickness conditions (thickness T2> thickness T1 / 2). The thickness of the other end (right end in the figure) is less than half that of the thickness T1, and is typically less than 1 μm.
　主面ＭＳに平行な平面レイアウト（図１７参照）において、信号パッド２１Ｂは、信号リード３２１とトレンチＴＲとの間の第１領域Ｒ１と、第１領域Ｒ１から信号リード３２１によって隔てられた第２領域Ｒ２とを含む。第１領域Ｒ１は一の仮想直線（図１７における寸法線）に沿って、信号リード３２１とトレンチＴＲとの間の最小距離ＤＴを有している。この一の仮想直線上に沿っての第２領域Ｒ２の寸法ＤＭは、最小距離ＤＴよりも大きいことが好ましい。 In a planar layout parallel to the main surface MS (see FIG. 17), the signal pad 21B has a first region R1 between the signal lead 321 and the trench TR and a second region R1 separated from the first region R1 by the signal lead 321. Includes region R2. The first region R1 has a minimum distance DT between the signal lead 321 and the trench TR along one virtual straight line (dimension line in FIG. 17). The dimension DM of the second region R2 along this one virtual straight line is preferably larger than the minimum distance DT.
　信号パッド２２Ｂの構成は、上述した信号パッド２１Ｂの構成と同様であってよい。具体的には、信号パッド２２Ｂの構成は、上述した信号パッド２１Ｂの構成と、横方向において対称であってよい。 The configuration of the signal pad 22B may be the same as the configuration of the signal pad 21B described above. Specifically, the configuration of the signal pad 22B may be symmetrical with the configuration of the signal pad 21B described above in the lateral direction.
　なお、上記以外の構成については、上述した実施の形態１の構成とほぼ同じであるため、同一または対応する要素について同一の符号を付し、その説明を繰り返さない。 Since the configurations other than the above are almost the same as the configurations of the first embodiment described above, the same or corresponding elements are designated by the same reference numerals, and the description thereof will not be repeated.
　本実施の形態によっても、実施の形態１で述べた厚み条件を満たす側面ＦＳが設けられる。これにより、実施の形態１の効果に類した効果が得られる。 Also in this embodiment, a side surface FS that satisfies the thickness condition described in the first embodiment is provided. As a result, an effect similar to the effect of the first embodiment can be obtained.
　特に、寸法ＤＭが最小距離ＤＴよりも大きい場合は、信号パッド２１Ｂの第２領域Ｒ２が広くなるので、信号リード３２１に力が加わった際に信号パッド２１Ｂの第２領域Ｒ２が破壊しにくくなる。一方で、信号パッド２１Ｂの第１領域Ｒ１は、前述した厚み条件が満たされていることによって、破壊しにくくされている。以上から、信号パッド２１Ｂの第１領域Ｒ１および第２領域Ｒ２の両方が破壊しにくい。よって、信号パッド２１Ｂへの信号リード３２１の接合強度を高めることができる。 In particular, when the dimension DM is larger than the minimum distance DT, the second region R2 of the signal pad 21B becomes wider, so that the second region R2 of the signal pad 21B is less likely to be destroyed when a force is applied to the signal lead 321. .. On the other hand, the first region R1 of the signal pad 21B is less likely to be destroyed because the above-mentioned thickness condition is satisfied. From the above, both the first region R1 and the second region R2 of the signal pad 21B are unlikely to be destroyed. Therefore, the bonding strength of the signal lead 321 to the signal pad 21B can be increased.
　＜実施の形態５＞
　本実施の形態においては、端子構造３０１（図６および図７：実施の形態１）の製造方法の例について説明する。 <Embodiment 5>
In this embodiment, an example of a manufacturing method of the terminal structure 301 (FIGS. 6 and 7: 1) will be described.
　図１９は、第１工程を概略的に示す部分平面図である。図２０は、図１９の線ＸＸ－ＸＸに沿う概略的な部分断面図である。なお、図中の二点鎖線は、後述するレーザ加工によって除去されることになる領域を示している。 FIG. 19 is a partial plan view schematically showing the first step. FIG. 20 is a schematic partial cross-sectional view taken along the line XX-XX of FIG. The alternate long and short dash line in the figure indicates a region that will be removed by laser processing described later.
　基体１０となる部分を含む第１グリーンシート１１Ｇが形成される。第１グリーンシート１１Ｇは、第１面Ｆ１と、第１面Ｆ１と反対の第２面Ｆ２とを有している。第１グリーンシート１１Ｇの第１面Ｆ１上に、信号パッド２１および信号パッド２２（図６および図７）となる部分を含むペースト層２０Ｐが印刷される。また第１グリーンシート１１Ｇの第１面Ｆ１上に、接地パッド２６、接地パッド２７および接続層２５（図６および図７）のそれぞれとなるペースト層２６Ｐ、ペースト層２７Ｐおよびペースト層２５Ｐが印刷される。印刷は、スクリーン印刷技術を用いて行われてよい。また基体１０となる部分を含む第２グリーンシート１２Ｇが形成される。第１グリーンシート１１Ｇの第２面Ｆ２と第２グリーンシート１２Ｇとが互いに向かい合うように第１グリーンシート１１Ｇと第２グリーンシート１２Ｇとを積層することによって、積層体８１が形成される。なお、積層体８１が有する複数のグリーンシートの数は任意であり、図２０においては第３グリーンシート１３Ｇも積層される。 The first green sheet 11G including the portion to be the base 10 is formed. The first green sheet 11G has a first surface F1 and a second surface F2 opposite to the first surface F1. A paste layer 20P including a portion to be a signal pad 21 and a signal pad 22 (FIGS. 6 and 7) is printed on the first surface F1 of the first green sheet 11G. Further, the paste layer 26P, the paste layer 27P, and the paste layer 25P, which are the ground pad 26, the ground pad 27, and the connection layer 25 (FIGS. 6 and 7), are printed on the first surface F1 of the first green sheet 11G. To. Printing may be performed using screen printing techniques. Further, a second green sheet 12G including a portion to be the substrate 10 is formed. The laminated body 81 is formed by laminating the first green sheet 11G and the second green sheet 12G so that the second surface F2 of the first green sheet 11G and the second green sheet 12G face each other. The number of the plurality of green sheets included in the laminated body 81 is arbitrary, and in FIG. 20, the third green sheet 13G is also laminated.
　図２１は、本実施の形態５における、端子構造３０１の製造方法の第２工程を概略的に示す部分断面図である。レーザ加工によって積層体８１の一部を除去する工程が行われる。この工程により第１グリーンシート１１Ｇの一部を除去することによって、トレンチＴＲの平坦面ＦＰの少なくとも一部となる面が第１グリーンシート１１Ｇに形成される。また上記工程によりペースト層２０Ｐの一部を除去することによって、ペースト層２０Ｐが、信号パッド２１および信号パッド２２のそれぞれとなるペースト層２１Ｐおよびペースト層２２Ｐへパターニングされる。またこれにともなって、信号パッド２１の側面ＦＳとなる面がペースト層２１Ｐに形成される。上記レーザ加工の後に、積層体８１が焼成される。 FIG. 21 is a partial cross-sectional view schematically showing the second step of the manufacturing method of the terminal structure 301 in the fifth embodiment. A step of removing a part of the laminated body 81 by laser processing is performed. By removing a part of the first green sheet 11G by this step, a surface to be at least a part of the flat surface FP of the trench TR is formed on the first green sheet 11G. Further, by removing a part of the paste layer 20P by the above step, the paste layer 20P is patterned into the paste layer 21P and the paste layer 22P which are the signal pad 21 and the signal pad 22, respectively. Along with this, a surface serving as a side surface FS of the signal pad 21 is formed on the paste layer 21P. After the laser processing, the laminate 81 is fired.
　図２２は、第３工程を概略的に示す部分断面図である。上記焼成によって、積層体８１（図２１）から焼成体８９が形成される。具体的には、第１グリーンシート１１Ｇ、第２グリーンシート１２Ｇおよび第３グリーンシート１３Ｇから基体１０が形成される。また、ペースト層２１Ｐ、ペースト層２２Ｐ、ペースト層２６Ｐ、ペースト層２７Ｐおよびペースト層２５Ｐのそれぞれから、信号パッド２１、信号パッド２２、接地パッド２６、接地パッド２７および接続層２５が形成される。 FIG. 22 is a partial cross-sectional view schematically showing the third step. By the above firing, a fired body 89 is formed from the laminated body 81 (FIG. 21). Specifically, the substrate 10 is formed from the first green sheet 11G, the second green sheet 12G, and the third green sheet 13G. Further, a signal pad 21, a signal pad 22, a ground pad 26, a ground pad 27, and a connection layer 25 are formed from each of the paste layer 21P, the paste layer 22P, the paste layer 26P, the paste layer 27P, and the paste layer 25P.
　図７を参照して、その後、信号パッド２１に電気的に接続されるように信号パッド２１上に信号リード３２１が、ろう材９０を用いて取り付けられる。また、他のリードも同様に取り付けられる。以上により、端子構造３０１が得られる。 With reference to FIG. 7, a signal lead 321 is then mounted on the signal pad 21 using the brazing material 90 so as to be electrically connected to the signal pad 21. Also, other leads are attached in the same manner. From the above, the terminal structure 301 is obtained.
　なお図２１の工程においてはトレンチＴＲの底が第２面Ｆ２よりも浅いが、トレンチＴＲは第２面Ｆ２より深くてもよく、例えば第２グリーンシート１２Ｇまたは第３グリーンシート１３Ｇ中に位置してもよい。なお、上述した製造方法は、レーザ加工の範囲を調整することによって、実施の形態１だけでなく実施の形態２～４にも適用することが可能である。 In the process of FIG. 21, the bottom of the trench TR is shallower than the second surface F2, but the trench TR may be deeper than the second surface F2, and is located in, for example, the second green sheet 12G or the third green sheet 13G. You may. The above-mentioned manufacturing method can be applied not only to the first embodiment but also to the second to fourth embodiments by adjusting the range of laser machining.
　本実施の形態によれば、トレンチＴＲは、積層体８１が形成された後のレーザ加工によって形成される。これにより、トレンチＴＲのパターンを任意に選択することができる。特に、図１３または図１４に示されるように、基体１０の主面の一部が縁ＥＤとトレンチＴＲとによって全体的に囲まれるようなレイアウトであっても、採用することができる。 According to the present embodiment, the trench TR is formed by laser processing after the laminated body 81 is formed. Thereby, the pattern of the trench TR can be arbitrarily selected. In particular, as shown in FIG. 13 or 14, even if the layout is such that a part of the main surface of the substrate 10 is totally surrounded by the edge ED and the trench TR, it can be adopted.
　図２３は、図１９の変形例を示す概略的な部分平面図である。図２４は、図２０の変形例を示すものであって、図２３の線ＸＸＩＶ－ＸＸＩＶに沿う概略的な部分断面図である。本変形例においては、ペースト層２０Ｐ（図１９および図２０）に代わって、ペースト層２１Ｐおよびペースト層２２Ｐが印刷される。第１面Ｆ１（図２４）は、ペースト層２１Ｐおよびペースト層２２Ｐの間において、ペースト層が印刷されない領域を有しており、この領域はレーザ加工によって除去される。このような領域が設けられることによって、図２０の工程が用いられる場合に比して、ペーストの消費量を節約することができる。特に、ペーストが貴金属を含有している場合、この節約によって製造コストを、大きく低減することができる。 FIG. 23 is a schematic partial plan view showing a modification of FIG. 19. FIG. 24 shows a modification of FIG. 20, and is a schematic partial cross-sectional view taken along the line XXIV-XXIV of FIG. 23. In this modification, the paste layer 21P and the paste layer 22P are printed instead of the paste layer 20P (FIGS. 19 and 20). The first surface F1 (FIG. 24) has a region between the paste layer 21P and the paste layer 22P where the paste layer is not printed, and this region is removed by laser processing. By providing such a region, the consumption of the paste can be saved as compared with the case where the process of FIG. 20 is used. Especially when the paste contains a noble metal, this saving can greatly reduce the manufacturing cost.
　＜実施の形態６＞
　図２５は、本実施の形態６における端子構造３０８の構成を概略的に示す部分断面図である。端子構造３０８は、少なくとも１つの配線層３０を有しており、図２５に示された例においては配線層３１および配線層３２を有している。配線層３０は、主面ＭＳから離れて基体１０中に設けられており、主面ＭＳと平行に、言い換えれば図２５において横方向に、広がっている。また端子構造３０８は、信号パッド２１および信号パッド２２の各々と配線層３０との間の厚み方向における接続のために、ビアホール中に形成された電極４１を有している。また端子構造３０８は、配線層３１と配線層３２との間の厚み方向における接続のために、ビアホール中に形成された電極４２を有している。なお、実施の形態１において説明したように、電極４１は、厚みＴ１（図７）の定義に関しては無視される。 <Embodiment 6>
FIG. 25 is a partial cross-sectional view schematically showing the configuration of the terminal structure 308 according to the sixth embodiment. The terminal structure 308 has at least one wiring layer 30, and in the example shown in FIG. 25, it has a wiring layer 31 and a wiring layer 32. The wiring layer 30 is provided in the substrate 10 apart from the main surface MS, and extends parallel to the main surface MS, in other words, laterally in FIG. 25. Further, the terminal structure 308 has an electrode 41 formed in the via hole for connection in the thickness direction between each of the signal pad 21 and the signal pad 22 and the wiring layer 30. Further, the terminal structure 308 has an electrode 42 formed in the via hole for connection between the wiring layer 31 and the wiring layer 32 in the thickness direction. As described in the first embodiment, the electrode 41 is ignored with respect to the definition of the thickness T1 (FIG. 7).
　端子構造３０８の製造が、前述した実施の形態５において説明したように複数のグリーンシートの積層工程を有する場合、厚み方向（図２５における縦方向）において、配線層３０となるペースト層はグリーンシート間に配置される。仮に、トレンチＴＲの底も必ずグリーンシート間に配置されなければならないとすると、厚み方向において、トレンチＴＲの底の位置は、配線層３０の存在範囲に含まれる。その場合、トレンチＴＲによる容量結合の調整の自由度が制限される。本実施の形態においては、厚み方向において、トレンチＴＲの底は配線層３０のいずれからも外れていてよい。これにより、容量結合の調整の自由度が高められる。このような配置は、例えば、実施の形態５で説明した製造方法により、容易に得ることができる。なお、トレンチＴＲの底の深さは均一である必要はなく、図２５に示されているように、互いに異なる深さを有する底ＴＢ１および底ＴＢ２が設けられてよい。 When the production of the terminal structure 308 includes a stacking process of a plurality of green sheets as described in the above-described fifth embodiment, the paste layer to be the wiring layer 30 in the thickness direction (vertical direction in FIG. 25) is a green sheet. Placed in between. Assuming that the bottom of the trench TR must also be arranged between the green sheets, the position of the bottom of the trench TR in the thickness direction is included in the existence range of the wiring layer 30. In that case, the degree of freedom in adjusting the capacitive coupling by the trench TR is limited. In the present embodiment, the bottom of the trench TR may be detached from any of the wiring layers 30 in the thickness direction. This increases the degree of freedom in adjusting the capacitive coupling. Such an arrangement can be easily obtained, for example, by the manufacturing method described in the fifth embodiment. The depth of the bottom of the trench TR does not have to be uniform, and as shown in FIG. 25, the bottom TB1 and the bottom TB2 having different depths may be provided.
　なお本実施の形態で説明した特徴は、前述した実施の形態１から５のいずれにも適用され得る。 The features described in this embodiment can be applied to any of the above-described embodiments 1 to 5.
　＜実施の形態７＞
　本実施の形態においては、端子構造３０１（図６および図７：実施の形態１）の製造方法の、前述した実施の形態５とは異なる例について説明する。 <Embodiment 7>
In this embodiment, an example of the method for manufacturing the terminal structure 301 (FIGS. 6 and 7: Embodiment 1), which is different from the above-described fifth embodiment, will be described.
　図２６は、第１工程を概略的に示す部分平面図である。図２７は、図２６の線ＸＸＶＩＩ－ＸＸＶＩＩに沿う概略的な部分断面図である。なお、図中の二点鎖線は、後述するパンチ加工によって除去されることになる領域を示している。 FIG. 26 is a partial plan view schematically showing the first step. FIG. 27 is a schematic partial cross-sectional view taken along line XXVII-XXVII of FIG. The alternate long and short dash line in the figure indicates a region that will be removed by punching, which will be described later.
　基体１０となる部分を含む第１グリーンシート１１Ｇが形成される。第１グリーンシート１１Ｇは、第１面Ｆ１と、第１面Ｆ１と反対の第２面Ｆ２とを有している。第１グリーンシート１１Ｇの第１面Ｆ１上に、信号パッド２１および信号パッド２２（図６および図７）となる部分を含むペースト層２０Ｐが印刷される。また第１グリーンシート１１Ｇの第１面Ｆ１上に、接地パッド２６、接地パッド２７および接続層２５（図６および図７）のそれぞれとなるペースト層２６Ｐ、ペースト層２７Ｐおよびペースト層２５Ｐが印刷される。印刷は、スクリーン印刷技術を用いて行われてよい。これら印刷によって、第１グリーンシート１１Ｇ、ペースト層２０Ｐ、ペースト層２６Ｐ、ペースト層２７Ｐおよびペースト層２５Ｐを有する複合層１１Ｃが形成される。 The first green sheet 11G including the portion to be the base 10 is formed. The first green sheet 11G has a first surface F1 and a second surface F2 opposite to the first surface F1. A paste layer 20P including a portion to be a signal pad 21 and a signal pad 22 (FIGS. 6 and 7) is printed on the first surface F1 of the first green sheet 11G. Further, the paste layer 26P, the paste layer 27P, and the paste layer 25P, which are the ground pad 26, the ground pad 27, and the connection layer 25 (FIGS. 6 and 7), are printed on the first surface F1 of the first green sheet 11G. To. Printing may be performed using screen printing techniques. By these printings, a composite layer 11C having a first green sheet 11G, a paste layer 20P, a paste layer 26P, a paste layer 27P and a paste layer 25P is formed.
　図２８は、第２工程を概略的に示す部分平面図である。図２９は、図２８の線ＸＸＩＸ－ＸＸＩＸに沿う概略的な部分断面図である。パンチ加工によって複合層１１Ｃの一部を除去する工程が行われる。この工程により第１グリーンシート１１Ｇの一部を除去することによって、トレンチＴＲの平坦面ＦＰの少なくとも一部となる面が、第１グリーンシート１１Ｇに形成される。また上記工程によりペースト層２０Ｐの一部を除去することによって、ペースト層２０Ｐが、信号パッド２１および信号パッド２２のそれぞれとなるペースト層２１Ｐおよびペースト層２２Ｐへパターニングされる。これにともなって、信号パッド２１の側面ＦＳとなる面がペースト層２１Ｐに形成される。 FIG. 28 is a partial plan view schematically showing the second step. FIG. 29 is a schematic partial cross-sectional view taken along line XXIX-XXIX of FIG. 28. A step of removing a part of the composite layer 11C by punching is performed. By removing a part of the first green sheet 11G by this step, a surface to be at least a part of the flat surface FP of the trench TR is formed on the first green sheet 11G. Further, by removing a part of the paste layer 20P by the above step, the paste layer 20P is patterned into the paste layer 21P and the paste layer 22P which are the signal pad 21 and the signal pad 22, respectively. Along with this, a surface serving as a side surface FS of the signal pad 21 is formed in the paste layer 21P.
　図３０は、第３工程を概略的に示す部分断面図である。基体１０となる部分を含む第２グリーンシート１２Ｇが形成される。前述したパンチ加工の後、第１グリーンシート１１Ｇの第２面Ｆ２と第２グリーンシート１２Ｇとが互いに向かい合うように第１グリーンシート１１Ｇと第２グリーンシート１２Ｇとを積層することによって、積層体８４が形成される。なお、積層体８４が有する複数のグリーンシートの数は任意であり、図３０においては第３グリーンシート１３Ｇおよび第４グリーンシート１４Ｇも積層される。図３０に示された例においては、第１グリーンシート１１Ｇにおいてパンチ加工が施された領域がトレンチＴＲとなり、厚み方向において、トレンチＴＲの底の位置は、第１グリーンシート１１Ｇの第２面Ｆ２の位置に対応する。なお変形例として、第２グリーンシート１２Ｇへもパンチ加工を施すことによって、トレンチＴＲの底の位置を第２グリーンシート１２Ｇと第３グリーンシート１３Ｇとの間の位置とすることも可能である。 FIG. 30 is a partial cross-sectional view schematically showing the third step. A second green sheet 12G including a portion to be the substrate 10 is formed. After the punching process described above, the laminated body 84 is formed by laminating the first green sheet 11G and the second green sheet 12G so that the second surface F2 and the second green sheet 12G of the first green sheet 11G face each other. Is formed. The number of the plurality of green sheets included in the laminated body 84 is arbitrary, and in FIG. 30, the third green sheet 13G and the fourth green sheet 14G are also laminated. In the example shown in FIG. 30, the punched region of the first green sheet 11G is the trench TR, and the position of the bottom of the trench TR in the thickness direction is the second surface F2 of the first green sheet 11G. Corresponds to the position of. As a modification, the bottom of the trench TR can be positioned between the second green sheet 12G and the third green sheet 13G by punching the second green sheet 12G as well.
　上記積層工程の後に、積層体８４（図３０）が焼成される。これにより積層体８４から焼成体８９（図２２）が得られる。具体的には、第１グリーンシート１１Ｇ、第２グリーンシート１２Ｇ、第３グリーンシート１３Ｇおよび第４グリーンシート１４Ｇから基体１０が形成される。また、ペースト層２１Ｐ、ペースト層２２Ｐ、ペースト層２６Ｐ、ペースト層２７Ｐおよびペースト層２５Ｐのそれぞれから、信号パッド２１、信号パッド２２、接地パッド２６、接地パッド２７および接続層２５が形成される。 After the above laminating step, the laminated body 84 (FIG. 30) is fired. As a result, the fired body 89 (FIG. 22) is obtained from the laminated body 84. Specifically, the substrate 10 is formed from the first green sheet 11G, the second green sheet 12G, the third green sheet 13G, and the fourth green sheet 14G. Further, a signal pad 21, a signal pad 22, a ground pad 26, a ground pad 27, and a connection layer 25 are formed from each of the paste layer 21P, the paste layer 22P, the paste layer 26P, the paste layer 27P, and the paste layer 25P.
　図７を参照して、その後、信号パッド２１に電気的に接続されるように信号パッド２１上に信号リード３２１が、ろう材９０を用いて取り付けられる。また、他のリードも同様に取り付けられる。以上により、端子構造３０１が得られる。 With reference to FIG. 7, a signal lead 321 is then mounted on the signal pad 21 using the brazing material 90 so as to be electrically connected to the signal pad 21. Also, other leads are attached in the same manner. From the above, the terminal structure 301 is obtained.
　本実施の形態によれば、基体１０のトレンチＴＲを、簡易な工程であるパンチ加工によって形成することができる。なお、パンチ加工は、第１グリーンシート１１Ｇに対して積層工程の前に行われる。よって、実施の形態２（図１３または図１４）のような、基体１０の主面の一部が縁ＥＤとトレンチＴＲとによって全体的に囲まれるようなレイアウトの場合、第１グリーンシート１１Ｇの、このように囲まれた部分が、他の部分から分離されてしまう。よって本実施の形態の製造方法は、前述した実施の形態１、３および４で説明した端子構造を得るために特に適している。 According to this embodiment, the trench TR of the substrate 10 can be formed by punching, which is a simple process. The punching process is performed on the first green sheet 11G before the laminating step. Therefore, in the case of a layout such that a part of the main surface of the substrate 10 is totally surrounded by the edge ED and the trench TR as in the second embodiment (FIG. 13 or 14), the first green sheet 11G , The part enclosed in this way is separated from other parts. Therefore, the manufacturing method of the present embodiment is particularly suitable for obtaining the terminal structure described in the above-described first, third, and fourth embodiments.
　図３１は、図２６の変形例を示す概略的な部分平面図である。図３２は、図２７の変形例を示すものであって、図３１の線ＸＸＸＩＩ－ＸＸＸＩＩに沿う概略的な部分断面図である。本変形例においては、ペースト層２０Ｐ（図２６および図２７）に代わって、ペースト層２１Ｐおよびペースト層２２Ｐが印刷される。第１面Ｆ１（図３２）は、ペースト層２１Ｐおよびペースト層２２Ｐの間において、ペースト層が印刷されない領域を有しており、この領域はパンチ加工によって除去される。このような領域が設けられることによって、図２７の工程が用いられる場合に比して、ペーストの消費量を節約することができる。特に、ペーストが貴金属を含有している場合、この節約によって製造コストを、大きく低減することができる。 FIG. 31 is a schematic partial plan view showing a modification of FIG. 26. FIG. 32 shows a modification of FIG. 27, and is a schematic partial cross-sectional view taken along the line XXXII-XXXII of FIG. 31. In this modification, the paste layer 21P and the paste layer 22P are printed instead of the paste layer 20P (FIGS. 26 and 27). The first surface F1 (FIG. 32) has a region between the paste layer 21P and the paste layer 22P where the paste layer is not printed, and this region is removed by punching. By providing such a region, the consumption of the paste can be saved as compared with the case where the step of FIG. 27 is used. Especially when the paste contains a noble metal, this saving can greatly reduce the manufacturing cost.
　なお上記各実施の形態においては、信号パッドの形状が四角形である場合について説明したが、他の形状が用いられてもよい。また実施の形態５および７においては、グリーンシートへの加工によってトレンチを形成する工程について説明したが、変形例として、トレンチを形成する前に、グリーンシートを焼成することによって焼成体が形成されてもよい。その場合、焼成体上に信号パッドが形成され、その後にトレンチが形成される。 Although the case where the shape of the signal pad is quadrangular has been described in each of the above embodiments, other shapes may be used. Further, in the fifth and seventh embodiments, the step of forming a trench by processing into a green sheet has been described, but as a modification, a fired body is formed by firing the green sheet before forming the trench. May be good. In that case, a signal pad is formed on the fired body, and then a trench is formed.
　＜実験＞
　以下の表１に示すように、端子構造３０１（図６および図７）に対応する実施例と、端子構造３００Ａ（図９）に対応する比較例１と、端子構造３００Ｂ（図１０）に対応する比較例２とが作製され、そして信号パッド２１への信号リード３２１の接合強度が評価された。 <Experiment>
As shown in Table 1 below, it corresponds to the embodiment corresponding to the terminal structure 301 (FIGS. 6 and 7), the comparative example 1 corresponding to the terminal structure 300A (FIG. 9), and the terminal structure 300B (FIG. 10). Comparative Example 2 and the bonding strength of the signal lead 321 to the signal pad 21 were evaluated.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
　比較例１、比較例２および実施例において、トレンチ間隔ＳＴは、共通して０．４５ｍｍとされた。一方、パッド幅ＷＰは、比較例１においては０．３８ｍｍとされ、比較例２および実施例においては０．４５ｍｍとされた。トレンチＴＲおよび信号パッド２１は、比較例１においては数十μｍ程度互いに離され、比較例２においては互いにわずかに（数μｍ程度）離され、実施例においては互いに連続とされた。 In Comparative Example 1, Comparative Example 2 and Examples, the trench spacing ST was set to 0.45 mm in common. On the other hand, the pad width WP was 0.38 mm in Comparative Example 1 and 0.45 mm in Comparative Example 2 and Examples. The trench TR and the signal pad 21 were separated from each other by about several tens of μm in Comparative Example 1, slightly separated from each other (about several μm) in Comparative Example 2, and continuous with each other in Example.
　信号パッド２１およびトレンチＴＲの長さ（図６における縦方向の寸法）は、共通して０．６４ｍｍとされた。信号リード３２１の幅（図７、図９および図１０における横方向の寸法）は、共通して０．２ｍｍとされ、信号リード３２１の厚み（図７、図９および図１０における縦方向の寸法）は、共通して０．１５ｍｍとされた。信号リード３２１の、信号パッド２１に接合されている部分の長さ（図６における縦方向の長さ）は、共通して０．５８ｍｍとされた。実施例では、パッドの中央での厚みＴ１は３６μｍ、パッド側面での厚みＴ２は２８μｍであった。したがってパッド側面での厚みＴ２は、パッドの中央での厚みＴ１の約７８％であり、厚みＴ１の半分より大きくなっていた。 The length of the signal pad 21 and the trench TR (the vertical dimension in FIG. 6) was set to 0.64 mm in common. The width of the signal lead 321 (horizontal dimensions in FIGS. 7, 9 and 10) is commonly set to 0.2 mm, and the thickness of the signal lead 321 (longitudinal dimensions in FIGS. 7, 9 and 10). ) Was set to 0.15 mm in common. The length of the portion of the signal lead 321 joined to the signal pad 21 (the length in the vertical direction in FIG. 6) was set to 0.58 mm in common. In the example, the thickness T1 at the center of the pad was 36 μm, and the thickness T2 at the side surface of the pad was 28 μm. Therefore, the thickness T2 on the side surface of the pad was about 78% of the thickness T1 at the center of the pad, which was larger than half of the thickness T1.
　各端子構造に対して、図８に示されているように、信号リード３２１の先端に対して、端子構造の厚み方向に沿って外力Ｆが加えられた。なお、実験の便宜上、外力Ｆを加える前に、図８の二点鎖線に示されているように、信号リード３２１を塑性変形させた。各サンプルの信号リード３２１を引き剥がすのに要した外力Ｆによって、信号リード３２１の接合強度を測定した。そして、比較例１、比較例２および実施例の各々について、サンプル間での平均値および最小値が算出された。 For each terminal structure, as shown in FIG. 8, an external force F was applied to the tip of the signal lead 321 along the thickness direction of the terminal structure. For convenience of experiment, the signal lead 321 was plastically deformed as shown by the alternate long and short dash line in FIG. 8 before applying the external force F. The bonding strength of the signal lead 321 was measured by the external force F required to peel off the signal lead 321 of each sample. Then, the average value and the minimum value between the samples were calculated for each of Comparative Example 1, Comparative Example 2, and Example.
　比較例１は接合強度が最も低かった。第１の理由として、パッド幅ＷＰが小さいので、信号パッド２１の単位面積当たりに加わる応力が大きくなりやすかったと推測される。第２の理由として、信号パッド２１の両端が薄いので、これら両端での応力緩和が働きにくく、結果として、信号パッド２１の端が破壊の起点となりやすかったと推測される。比較例２においては、信号パッド２１のパッド幅ＷＰがトレンチ間隔ＳＴとほぼ同じであるので上記第１の理由は該当しないことから、接合強度が若干改善されたものと推測される。実施例においては、上記第１の理由だけでなく第２の理由も該当しないことから、接合強度が、比較例１および２より大きかったと推測される。 Comparative Example 1 had the lowest joint strength. As the first reason, it is presumed that since the pad width WP is small, the stress applied per unit area of the signal pad 21 tends to be large. The second reason is that since both ends of the signal pad 21 are thin, stress relaxation at both ends is difficult to work, and as a result, it is presumed that the end of the signal pad 21 is likely to be the starting point of fracture. In Comparative Example 2, since the pad width WP of the signal pad 21 is almost the same as the trench spacing ST, the first reason is not applicable, and it is presumed that the joint strength is slightly improved. In the examples, not only the first reason but also the second reason does not apply, so it is presumed that the joint strength was larger than that of Comparative Examples 1 and 2.
　なお、比較例２（図１０：端子構造３００Ｂ）のように信号パッド２１の厚みが実質的にゼロに達する箇所と、トレンチＴＲの側壁とをほぼ一致させることは、製造上、難易度が高い。本実験においては、多数のサンプルを製造後、これらから比較例２に対応するものを抽出することによって、比較例２に対応するサンプルを得た。仮に比較例２の端子構造の量産が行われたとすると、低い歩留まりが予想される。これに対して比較例１および実施例については、このような歩留まりの問題は想定されない。 It is difficult in manufacturing to make the portion where the thickness of the signal pad 21 reaches substantially zero and the side wall of the trench TR substantially match as in Comparative Example 2 (FIG. 10: Terminal structure 300B). .. In this experiment, after producing a large number of samples, the samples corresponding to Comparative Example 2 were extracted from them to obtain the samples corresponding to Comparative Example 2. If the terminal structure of Comparative Example 2 is mass-produced, a low yield is expected. On the other hand, in Comparative Examples 1 and Examples, such a yield problem is not assumed.
　この発明は詳細に説明されたが、上記した説明は、すべての局面において、例示であって、この発明がそれに限定されるものではない。例示されていない無数の変形例が、この発明の範囲から外れることなく想定され得るものと解される。 Although the present invention has been described in detail, the above description is an example in all aspects, and the present invention is not limited thereto. It is understood that innumerable variations not illustrated can be assumed without departing from the scope of the present invention.
　１０　：基体
　１１Ｃ　：複合層
　１１Ｇ　：第１グリーンシート
　１２Ｇ　：第２グリーンシート
　１３Ｇ　：第３グリーンシート
　１４Ｇ　：第４グリーンシート
　２０Ｐ　：ペースト層
　２１，２１Ａ，２１Ｂ　：信号パッド（第１パッド）
　２１Ｐ　：ペースト層
　２２，２２Ａ，２２Ｂ　：信号パッド（第４パッド）
　２２Ｐ　：ペースト層
　２５　：接続層
　２５Ｐ　：ペースト層
　２６　：接地パッド（第２パッド）
　２６Ｐ　：ペースト層
　２７　：接地パッド（第３パッド）
　２７Ｐ　：ペースト層
　３０～３２　：配線層
　４１，４２　：電極
　８１，８４　：積層体
　８９　：焼成体
　９０　：ろう材
　３０１～３０８　：端子構造
　３１１，３１１ａ　：信号端子
　３１２，３１２ａ　：信号端子
　３１６，３１６ａ　：接地端子
　３１７，３１７ａ　：接地端子
　３２１，３２１ａ，３２２，３２２ａ　：信号リード
　３２６，３２６ａ，３２７，３２７ａ　：接地リード
　３３１，３３１ａ，３３２，３３２ａ　：信号線
　３３６，３３６ａ，３３７，３３７ａ　：接地線
　５０１　：パッケージ
　５３０　：ケーシング
　５３１　：板体
　５３２　：枠体
　５３５　：開口部
　７０１　：高周波モジュール
　７３０　：蓋体
　７５０　：内部回路
　７５２　：光学部品
　ＣＡ　：差動線路
　ＣＢ　：差動線路
　ＣＶ　：キャビティ
　ＴＲ　：トレンチ 10: Base 11C: Composite layer 11G: 1st green sheet 12G: 2nd green sheet 13G: 3rd green sheet 14G: 4th green sheet 20P: Paste layer 21, 21A, 21B: Signal pad (1st pad)
21P: Paste layer 22, 22A, 22B: Signal pad (4th pad)
22P: Paste layer 25: Connection layer 25P: Paste layer 26: Ground pad (second pad)
26P: Paste layer 27: Ground pad (3rd pad)
27P: Paste layer 30 to 32: Wiring layer 41, 42: Electrode 81, 84: Laminated body 89: Fired body 90: Wax material 301 to 308: Terminal structure 311, 311a: Signal terminal 312, 312a: Signal terminal 316, 316a : Ground terminal 317, 317a: Ground terminal 321, 321a, 322, 322a: Signal lead 326, 326a, 327, 327a: Ground lead 331, 331a, 332, 332a: Signal line 336, 336a, 337, 337a: Ground wire 501 : Package 530: Casing 531: Plate 532: Frame 535: Opening 701: High frequency module 730: Lid 750: Internal circuit 752: Optical parts CA: Differential line CB: Differential line CV: Cavity TR: Trench

Claims (15)

  1. 　絶縁体セラミックスからなり、トレンチが設けられた主面を有する基体を備え、前記トレンチは、前記主面につながる平坦面を含み、さらに、
    　前記基体の前記主面上に設けられ金属からなる第１パッドと、
    　前記第１パッドに電気的に接続されるように前記第１パッド上に設けられたリードと、
    を備え、前記第１パッドは前記トレンチの前記平坦面の外挿面上に側面を有しており、前記基体の前記主面に垂直な少なくとも一の断面視において、前記第１パッドは、前記主面に平行な方向における中点で第１厚みを有しており、かつ前記側面で第２厚みを有しており、前記第２厚みが前記第１厚みの半分よりも大きいという厚み条件が満たされている端子構造。     It comprises a substrate made of insulating ceramic and having a main surface provided with a trench, the trench including a flat surface connected to the main surface, and further.
    A first pad made of metal provided on the main surface of the substrate, and
    A reed provided on the first pad so as to be electrically connected to the first pad,
    The first pad has a side surface on the extrapolated surface of the flat surface of the trench, and in at least one cross-sectional view perpendicular to the main surface of the substrate, the first pad is said. The thickness condition is that the midpoint in the direction parallel to the main surface has a first thickness and the side surface has a second thickness, and the second thickness is larger than half of the first thickness. Filled terminal structure.
  2. 　前記基体の前記主面は直線状の縁を含み、前記第１パッドの前記側面は前記縁まで延びており、
    　前記基体の前記主面に垂直であって前記縁を含む断面視において、前記厚み条件が満たされている、
    請求項１に記載の端子構造。     The main surface of the substrate includes a linear edge, and the side surface of the first pad extends to the edge.
    The thickness condition is satisfied in a cross-sectional view perpendicular to the main surface of the substrate and including the edge.
    The terminal structure according to claim 1.
  3. 　前記第１パッドは前記縁上で幅寸法を有しており、前記厚み条件は少なくとも、前記基体の前記主面に垂直であって前記縁から前記幅寸法の３０％以内の任意の断面視において満たされている、請求項２に記載の端子構造。 The first pad has a width dimension on the edge, and the thickness condition is at least perpendicular to the main surface of the substrate and within 30% of the width dimension from the edge in any cross-sectional view. The terminal structure according to claim 2, which is satisfied.
  4. 　前記第１パッドは前記主面上において前記縁および前記トレンチによって完全に囲まれている、請求項２または３に記載の端子構造。 The terminal structure according to claim 2 or 3, wherein the first pad is completely surrounded by the edge and the trench on the main surface.
  5. 　前記主面から離れて前記基体中に設けられ前記主面と平行に広がる少なくとも１つの配線層をさらに備え、厚み方向における位置に関して前記トレンチの底は前記少なくとも１つの配線層のいずれからも外れている、請求項１から４のいずれか１項に記載の端子構造。 It further comprises at least one wiring layer provided in the substrate away from the main surface and extending parallel to the main surface, and the bottom of the trench disengages from any of the at least one wiring layer in terms of position in the thickness direction. The terminal structure according to any one of claims 1 to 4.
  6. 　前記基体の前記主面上に設けられ金属からなる、第２パッドおよび第３パッドをさらに備え、前記第１パッドは前記第２パッドおよび前記第３パッドの間に配置されており、
    　前記第１パッドは信号線用であり、前記第２パッドおよび前記第３パッドは接地用である、請求項１から５のいずれか１項に記載の端子構造。     A second pad and a third pad made of metal provided on the main surface of the substrate are further provided, and the first pad is arranged between the second pad and the third pad.
    The terminal structure according to any one of claims 1 to 5, wherein the first pad is for a signal line, and the second pad and the third pad are for grounding.
  7. 　前記基体の前記主面上の前記第１パッドと前記第３パッドとの間に、金属からなる、信号線用の第４パッドをさらに備え、
    　前記トレンチは前記第１パッドと前記第４パッドとの間の部分を含み、前記基体の前記主面は、前記第１パッドと前記第２パッドとの間および前記第３パッドと前記第４パッドとの間において平坦である、請求項６に記載の端子構造。     A fourth pad made of metal for a signal line is further provided between the first pad and the third pad on the main surface of the substrate.
    The trench includes a portion between the first pad and the fourth pad, and the main surface of the substrate is between the first pad and the second pad and between the third pad and the fourth pad. The terminal structure according to claim 6, which is flat between the two.
  8. 　前記主面に平行な平面レイアウトにおいて、前記第１パッドは、前記リードと前記トレンチとの間の第１領域と、前記第１領域から前記リードによって隔てられた第２領域とを含み、前記第１領域は一の仮想直線に沿って前記リードと前記トレンチとの間の最小距離を有しており、前記一の仮想直線上に沿っての前記第２領域の寸法は前記最小距離よりも大きい、請求項７に記載の端子構造。 In a planar layout parallel to the main surface, the first pad comprises a first region between the lead and the trench and a second region separated from the first region by the lead. One region has a minimum distance between the lead and the trench along one virtual straight line, and the dimension of the second region along the one virtual straight line is larger than the minimum distance. , The terminal structure according to claim 7.
  9. 　前記基体の前記主面上の前記第１パッドと前記第３パッドとの間に、金属からなる、信号線用の第４パッドをさらに備え、
    　前記トレンチは前記第１パッドと前記第２パッドとの間の部分および前記第４パッドと前記第３パッドとの間の部分を含み、前記基体の前記主面は前記第１パッドと前記第４パッドとの間において平坦である、請求項６に記載の端子構造。     A fourth pad made of metal for a signal line is further provided between the first pad and the third pad on the main surface of the substrate.
    The trench includes a portion between the first pad and the second pad and a portion between the fourth pad and the third pad, and the main surface of the substrate is the first pad and the fourth pad. The terminal structure according to claim 6, which is flat between the pad and the pad.
  10. 　前記主面に平行な平面レイアウトにおいて、前記第１パッドは、前記リードと前記トレンチとの間の第１領域と、前記第１領域から前記リードによって隔てられた第２領域とを含み、前記第１領域は一の仮想直線に沿って前記リードと前記トレンチとの間の最小距離を有しており、前記一の仮想直線上に沿っての前記第２領域の寸法は前記最小距離よりも大きい、請求項９に記載の端子構造。 In a planar layout parallel to the main surface, the first pad comprises a first region between the lead and the trench and a second region separated from the first region by the lead. One region has a minimum distance between the lead and the trench along one virtual straight line, and the dimension of the second region along the one virtual straight line is larger than the minimum distance. , The terminal structure according to claim 9.
  11. 　前記基体の前記主面上の前記第１パッドと前記第３パッドとの間に、金属からなる、信号線用の第４パッドをさらに備え、
    　前記トレンチは、前記第１パッドと前記第４パッドとの間の部分、前記第１パッドと前記第２パッドとの間の部分および前記第４パッドと前記第３パッドとの間の部分を含む、請求項６に記載の端子構造。     A fourth pad made of metal for a signal line is further provided between the first pad and the third pad on the main surface of the substrate.
    The trench includes a portion between the first pad and the fourth pad, a portion between the first pad and the second pad, and a portion between the fourth pad and the third pad. , The terminal structure according to claim 6.
  12. 　前記主面上に設けられ前記第２パッドと前記第３パッドとを互いにつなぐ接続層をさらに備え、前記トレンチは前記接続層と前記第１パッドとの間の部分および前記接続層と前記第４パッドとの間の部分を含む、請求項１１に記載の端子構造。 A connecting layer provided on the main surface and connecting the second pad and the third pad to each other is further provided, and the trench is a portion between the connecting layer and the first pad, and the connecting layer and the fourth pad. The terminal structure according to claim 11, which includes a portion between the pad and the pad.
  13. 　請求項１から１２のいずれか１項に記載の端子構造と、
    　前記端子構造が取り付けられた枠体と、
    　前記枠体を支持する板体と、
    を備える、パッケージ。     The terminal structure according to any one of claims 1 to 12.
    The frame to which the terminal structure is attached and
    A plate that supports the frame and
    The package.
  14. 　請求項１から１２のいずれか１項に記載の端子構造の製造方法であって、
    　前記基体となる部分を含む、第１グリーンシートおよび第２グリーンシートを形成する工程を備え、前記第１グリーンシートは第１面と前記第１面と反対の第２面とを有しており、前記端子構造の製造方法はさらに、
    　前記第１グリーンシートの前記第１面上に、前記第１パッドとなる部分を含むペースト層を印刷する工程と、
    　前記第１グリーンシートの前記第２面と前記第２グリーンシートとが互いに向かい合うように前記第１グリーンシートと前記第２グリーンシートとを積層することによって積層体を形成する工程と、
    　レーザ加工によって前記積層体の一部を除去する工程と、
    を備え、前記積層体の一部を除去する工程は、
    　　前記第１グリーンシートの一部を除去することによって、前記トレンチの前記平坦面の少なくとも一部となる面を前記第１グリーンシートに形成する工程と、
    　　前記ペースト層の一部を除去することによって、前記第１パッドの前記側面となる面を前記ペースト層に形成する工程と、
    を含み、前記端子構造の製造方法はさらに、
    　前記積層体の一部を除去する工程の後に、前記積層体を焼成する工程と、
    　前記積層体を焼成する工程の後に、前記第１パッドに電気的に接続されるように前記第１パッド上に前記リードを取り付ける工程と、
    を備える、
    端子構造の製造方法。     The method for manufacturing a terminal structure according to any one of claims 1 to 12.
    A step of forming a first green sheet and a second green sheet including a portion serving as a substrate is provided, and the first green sheet has a first surface and a second surface opposite to the first surface. , The manufacturing method of the terminal structure is further described.
    A step of printing a paste layer including a portion to be the first pad on the first surface of the first green sheet, and
    A step of forming a laminated body by laminating the first green sheet and the second green sheet so that the second surface of the first green sheet and the second green sheet face each other.
    A step of removing a part of the laminated body by laser processing and
    The step of removing a part of the laminated body is
    A step of forming a surface that becomes at least a part of the flat surface of the trench on the first green sheet by removing a part of the first green sheet.
    A step of forming the side surface of the first pad into the paste layer by removing a part of the paste layer.
    Including, the method for manufacturing the terminal structure further
    After the step of removing a part of the laminated body, the step of firing the laminated body and the step of firing the laminated body,
    After the step of firing the laminate, a step of attaching the reed on the first pad so as to be electrically connected to the first pad,
    To prepare
    Manufacturing method of terminal structure.
  15. 　請求項１から１２のいずれか１項に記載の端子構造の製造方法であって、
    　前記基体となる部分を含む、第１グリーンシートおよび第２グリーンシートを形成する工程を備え、前記第１グリーンシートは第１面と前記第１面と反対の第２面とを有しており、さらに、
    　前記第１グリーンシートの前記第１面上に、前記第１パッドとなる部分を含むペースト層を印刷することによって、前記第１グリーンシートおよび前記ペースト層を有する複合層を形成する工程と、
    　パンチ加工によって前記複合層の一部を除去する工程と、
    を備え、前記複合層の一部を除去する工程は、
    　　前記第１グリーンシートの一部を除去することによって、前記トレンチの前記平坦面の少なくとも一部となる面を前記第１グリーンシートに形成する工程と、
    　　前記ペースト層の一部を除去することによって、前記第１パッドの前記側面となる面を前記ペースト層に形成する工程と、
    を含み、前記端子構造の製造方法はさらに、
    　前記複合層の一部を除去する工程の後に、前記第１グリーンシートの前記第２面と前記第２グリーンシートとが互いに向かい合うように前記第１グリーンシートと前記第２グリーンシートとを積層することによって積層体を形成する工程と、
    　前記積層体を焼成する工程と、
    　前記積層体を焼成する工程の後に、前記第１パッドに電気的に接続されるように前記第１パッド上に前記リードを取り付ける工程と、
    を備える、
    端子構造の製造方法。     The method for manufacturing a terminal structure according to any one of claims 1 to 12.
    A step of forming a first green sheet and a second green sheet including a portion serving as a substrate is provided, and the first green sheet has a first surface and a second surface opposite to the first surface. ,further,
    A step of forming a composite layer having the first green sheet and the paste layer by printing a paste layer including a portion to be the first pad on the first surface of the first green sheet.
    A step of removing a part of the composite layer by punching and
    The step of removing a part of the composite layer is
    A step of forming a surface that becomes at least a part of the flat surface of the trench on the first green sheet by removing a part of the first green sheet.
    A step of forming the side surface of the first pad into the paste layer by removing a part of the paste layer.
    Including, the method for manufacturing the terminal structure further
    After the step of removing a part of the composite layer, the first green sheet and the second green sheet are laminated so that the second surface of the first green sheet and the second green sheet face each other. By doing so, the process of forming a laminate and
    The step of firing the laminate and
    After the step of firing the laminate, a step of attaching the reed on the first pad so as to be electrically connected to the first pad,
    To prepare
    Manufacturing method of terminal structure.
PCT/JP2020/022506 2019-09-11 2020-06-08 Terminal structure, package, and method for manufacturing terminal structure WO2021049111A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023120586A1 (en) * 2021-12-23 2023-06-29 京セラ株式会社 Wiring board, electronic component mounting package using wiring board, and electronic module

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014192687A1 (en) * 2013-05-29 2014-12-04 京セラ株式会社 Package for housing elements and mounting structure
WO2015016173A1 (en) * 2013-07-29 2015-02-05 京セラ株式会社 Wiring substrate, wiring substrate with lead, and electronic device
WO2016186128A1 (en) * 2015-05-20 2016-11-24 京セラ株式会社 Semiconductor element package, semiconductor device, and mounting structure
WO2018003332A1 (en) * 2016-06-27 2018-01-04 Ｎｇｋエレクトロデバイス株式会社 High-frequency ceramic substrate and high-frequency semiconductor element housing package

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3435484B2 (en) * 1995-06-08 2003-08-11 日本特殊陶業株式会社 Ceramic substrate and method of manufacturing the same
JP2000349222A (en) * 1999-06-07 2000-12-15 Sony Corp Lead frame and semiconductor package
JP2006121022A (en) * 2004-09-22 2006-05-11 Kyocera Corp Wiring board with lead pin and manufacturing method thereof
JP2012059782A (en) * 2010-09-06 2012-03-22 Seiko Instruments Inc Resin sealing type semiconductor device, and method of manufacturing the same
KR101747226B1 (en) * 2016-03-16 2017-06-27 해성디에스 주식회사 Semiconductor package substrate and the method for manufacturing the same
JP6909629B2 (en) * 2017-05-10 2021-07-28 ローム株式会社 Semiconductor device
JP6923431B2 (en) 2017-12-25 2021-08-18 京セラ株式会社 High frequency substrates, high frequency packages and high frequency modules

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014192687A1 (en) * 2013-05-29 2014-12-04 京セラ株式会社 Package for housing elements and mounting structure
WO2015016173A1 (en) * 2013-07-29 2015-02-05 京セラ株式会社 Wiring substrate, wiring substrate with lead, and electronic device
WO2016186128A1 (en) * 2015-05-20 2016-11-24 京セラ株式会社 Semiconductor element package, semiconductor device, and mounting structure
WO2018003332A1 (en) * 2016-06-27 2018-01-04 Ｎｇｋエレクトロデバイス株式会社 High-frequency ceramic substrate and high-frequency semiconductor element housing package

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023120586A1 (en) * 2021-12-23 2023-06-29 京セラ株式会社 Wiring board, electronic component mounting package using wiring board, and electronic module

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